Self-adaptive gate driving device and driving method

Abstract

The invention provides a self-adaptive gate driving device and a driving method. The driving device can comprise a detection module, a control module and a driving module, wherein the detection module outputs a first voltage rise signal, a first voltage drop signal, a second voltage rise signal and a second voltage drop signal to the control module. The control module outputs a plurality of turn-on control signals and a plurality of turn-off control signals to the driving module. The driving module drives the power semiconductor device. A closed-loop control mode is adopted, when the working voltage and current of the power semiconductor device change, control parameters are adjusted in real time in the switching-on or switching-off process, the switching loss of the power semiconductor device is reduced, low-voltage and current overshoot of the power semiconductor device can be achieved, and the power semiconductor device is more stable in switching-on and switching-off. And the failure of the power semiconductor device is avoided.

Description

Technical Field

[0001] The present application relates to the field of power semiconductor device driving technology, and in particular to an adaptive gate driving device and driving method. Background Art

[0002] Power semiconductor devices, represented by insulated gate bipolar transistors (IGBTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), are core components of power electronics power conversion devices and are widely used in small household appliances, electric vehicles, rail transportation, smart grids, aerospace, and other fields.

[0003] Increasing the switching speed of power semiconductor devices can effectively reduce their switching losses. However, this also results in extremely high voltage and current overshoots, which can easily damage the devices. While staged control of the power semiconductor device switching process (i.e., the turn-on and turn-off processes) can suppress voltage and current overshoots while also reducing switching losses, the parameters of power semiconductor devices produced by different manufacturers vary significantly, and the duration of each stage of the switching process also varies. Furthermore, factors such as bus voltage, load current, and temperature all significantly affect the switching process, making open-loop control unsuitable for universal application.

[0004] The drive device provided by the related art uses an open-loop control method, driving the power semiconductor device through a control module and a drive module. The control parameters for the opening and closing process, including the drive current and timing, are usually pre-set and fixed. The control parameters do not adjust with the actual operating conditions of the power semiconductor device. When the operating voltage and current of the power semiconductor device change, if the pre-set control parameters are still used during the opening and closing process, the power semiconductor device will suffer high switching losses and may easily cause high voltage and current overshoots in the power semiconductor device. Summary of the Invention

[0005] In order to solve the problem in the prior art that power semiconductor devices are difficult to simultaneously suppress switching losses and voltage and current overshoots under all operating conditions, the present application provides an adaptive gate drive device, which may include a detection module, a control module and a drive module.

[0006] The detection module is used to output a first voltage rising signal, a first voltage falling signal, a second voltage rising signal and a second voltage falling signal according to a first voltage of the gate and a second voltage between the first electrode and the second electrode in the power semiconductor device.

[0007] The control module is used to output multiple on control signals according to the driving signal, the first voltage rising signal and the second voltage falling signal, and output multiple off control signals according to the driving signal, the first voltage falling signal and the second voltage rising signal.

[0008] The driving module is used to drive the power semiconductor device according to a plurality of turn-on control signals and a plurality of turn-off control signals.

[0009] In some possible implementations, the detection module includes a first input unit, a second input unit, a first output unit, and a second output unit. The first input unit is connected to the gate, the first input unit is also connected to the first output unit, the second input unit is connected to the first electrode, and the second input unit is also connected to the second output unit.

[0010] The first input unit is used to collect a first voltage and output a first voltage change rate according to the first voltage.

[0011] The second input unit is used to collect the second voltage and output a second voltage change rate according to the second voltage.

[0012] The first output unit is configured to output a first voltage increase signal and a first voltage decrease signal according to a first voltage change rate.

[0013] The second output unit is configured to output a second voltage increase signal and a second voltage decrease signal according to the second voltage change rate.

[0014] Exemplarily, when the first voltage rises, the first voltage change rate is a positive voltage, the first voltage rising signal is a high level signal, and the first voltage falling signal is a low level signal.

[0015] When the first voltage decreases, the first voltage change rate is a negative voltage, the first voltage rising signal is a low level signal, and the first voltage falling signal is a high level signal.

[0016] When the first voltage remains unchanged, the first voltage change rate is zero, and the first voltage rising signal and the first voltage falling signal are both low-level signals.

[0017] Optionally, when the second voltage rises, the second voltage change rate is a positive voltage, the second voltage rising signal is a high level signal, and the second voltage falling signal is a low level signal.

[0018] When the second voltage decreases, the second voltage change rate is a negative voltage, the second voltage rising signal is a low level signal, and the second voltage falling signal is a high level signal.

[0019] When the second voltage remains unchanged, the second voltage change rate is zero, and the second voltage rising signal and the second voltage falling signal are both low-level signals.

[0020] In some other possible implementations, the control module includes an activation control unit and a deactivation control unit.

[0021] The opening control unit is used to: when the driving signal is a high-level signal, perform logical operations on the first voltage rising signal and the second voltage falling signal, identify the second voltage falling stage, and reduce the number of high-level signals in multiple opening control signals during the second voltage falling stage.

[0022] The shutdown control unit is used to: when the driving signal is a low-level signal, perform logical operations on the first voltage drop signal and the second voltage rise signal, identify the second voltage rise stage, and reduce the number of high-level signals in multiple shutdown control signals during the second voltage rise stage.

[0023] In yet another possible implementation, the driving module includes an on-driving unit and a off-driving unit.

[0024] The turn-on drive unit is used to output a turn-on drive current to the power semiconductor device according to a plurality of turn-on control signals.

[0025] The shutdown drive unit is used to output a shutdown drive current to the power semiconductor device according to a plurality of shutdown control signals.

[0026] Furthermore, the on-driving unit includes a plurality of first current control branches, and the off-driving unit includes a plurality of second current control branches.

[0027] The first ends of the plurality of first current control branches are connected to receive the first operating voltage, or the first ends of the plurality of first current control branches are used to receive a plurality of first operating voltages in a one-to-one correspondence.

[0028] The second ends of the multiple first current control branches are connected to the first ends of the multiple second current control branches, and the second ends of the multiple first current control branches and the first ends of the multiple second current control branches serve as output ends of the driving module.

[0029] The second ends of the plurality of second current control branches are connected to receive the second operating voltage, or the second ends of the plurality of second current control branches are used to receive a plurality of second operating voltages in a one-to-one correspondence.

[0030] Optionally, the first current control branch and / or the second current control branch is a variable current branch, the variable current branch including a first controllable switch and a current source connected in series. Alternatively, the first current control branch and / or the second current control branch is a variable voltage branch, the variable voltage branch including a second controllable switch and a first resistor connected in series. Alternatively, the first current control branch and / or the second current control branch is a variable resistance branch, the variable resistance branch including a third controllable switch and a second resistor.

[0031] On the other hand, the present application also provides an adaptive gate driving method, which may include:

[0032] The detection module outputs a first voltage rising signal, a first voltage falling signal, a second voltage rising signal and a second voltage falling signal to the control module according to the first voltage of the gate and the second voltage between the first electrode and the second electrode in the power semiconductor device.

[0033] The control module outputs a plurality of on control signals according to the driving signal, the first voltage rising signal and the second voltage falling signal, and outputs a plurality of off control signals to the driving module according to the driving signal, the first voltage falling signal and the second voltage rising signal.

[0034] The driving module drives the power semiconductor device according to a plurality of turn-on control signals and a plurality of turn-off control signals.

[0035] In some possible implementations, the detection module outputs a first voltage-increasing signal, a first voltage-decreasing signal, a second voltage-increasing signal, and a second voltage-decreasing signal to the control module based on a first voltage of a gate and a second voltage between the first electrode and the second electrode in the power semiconductor device, including:

[0036] The first input unit of the detection module collects a first voltage and outputs a first voltage change rate according to the first voltage.

[0037] The second input unit of the detection module collects the second voltage and outputs a second voltage change rate according to the second voltage.

[0038] The first output unit of the detection module outputs a first voltage increase signal and a first voltage decrease signal according to the first voltage change rate.

[0039] The second output unit of the detection module outputs a second voltage increase signal and a second voltage decrease signal according to the second voltage change rate.

[0040] Exemplarily, when the first voltage rises, the first voltage change rate is a positive voltage, the first voltage rising signal is a high level signal, and the first voltage falling signal is a low level signal.

[0041] When the first voltage decreases, the first voltage change rate is a negative voltage, the first voltage rising signal is a low level signal, and the first voltage falling signal is a high level signal.

[0042] When the first voltage remains unchanged, the first voltage change rate is zero, and the first voltage rising signal and the first voltage falling signal are both low-level signals.

[0043] Optionally, when the second voltage rises, the second voltage change rate is a positive voltage, the second voltage rising signal is a high level signal, and the second voltage falling signal is a low level signal.

[0044] When the second voltage decreases, the second voltage change rate is a negative voltage, the second voltage rising signal is a low level signal, and the second voltage falling signal is a high level signal.

[0045] When the second voltage remains unchanged, the second voltage change rate is zero, and the second voltage rising signal and the second voltage falling signal are both low-level signals.

[0046] In another possible implementation, the control module outputs a plurality of turn-on control signals according to the drive signal, the first voltage rising signal, and the second voltage falling signal, and outputs a plurality of turn-off control signals to the drive module according to the drive signal, the first voltage falling signal, and the second voltage rising signal, including:

[0047] When the driving signal is a high-level signal, the activation control unit of the control module performs a logical operation on the first voltage rising signal and the second voltage falling signal, identifies the second voltage falling stage, and reduces the number of high-level signals in the multiple activation control signals during the second voltage falling stage.

[0048] When the driving signal is a low-level signal, the shutdown control unit of the control module performs a logical operation on the first voltage drop signal and the second voltage rise signal, identifies the second voltage rise stage, and reduces the number of high-level signals in the multiple shutdown control signals during the second voltage rise stage.

[0049] In another possible implementation, the driving module drives the power semiconductor device according to the multiple turn-on control signals and the multiple turn-off control signals, including:

[0050] The turn-on driving unit of the driving module outputs a turn-on driving current to the power semiconductor device according to a plurality of turn-on control signals.

[0051] The shutdown driving unit of the driving module outputs a shutdown driving current to the power semiconductor device according to a plurality of shutdown control signals.

[0052] Compared with the prior art, the present invention has the following advantages:

[0053] The adaptive gate drive device provided in this application may include a detection module, a control module, and a drive module. The detection module may output a first voltage-increasing signal, a first voltage-decreasing signal, a second voltage-increasing signal, and a second voltage-decreasing signal based on a first voltage at a gate of a power semiconductor device and a second voltage between a first electrode and a second electrode. The control module may output multiple turn-on control signals based on the drive signal, the first voltage-increasing signal, and the second voltage-decreasing signal, and may output multiple turn-off control signals based on the drive signal, the first voltage-decreasing signal, and the second voltage-increasing signal. The drive module may drive the power semiconductor device based on the multiple turn-on control signals and the multiple turn-off control signals. It can be seen that this application adopts a closed-loop control method, driving the power semiconductor device through the detection module, the control module, and the drive module. When the operating voltage and current of the power semiconductor device change, the control parameters are adjusted in real time during the turn-on or turn-off process to reduce the switching loss of the power semiconductor device and achieve low voltage and current overshoot of the power semiconductor device, thereby preventing failure of the power semiconductor device.

[0054] When the drive signal is a high-level signal, the on-control unit in the present application can perform a logical operation on the first voltage-rising signal and the second voltage-falling signal, identify the second voltage-falling stage, and reduce the number of high-level signals in the multiple on-control signals during the second voltage-falling stage. When the drive signal is a low-level signal, the off-control unit can perform a logical operation on the first voltage-falling signal and the second voltage-rising signal, identify the second voltage-rising stage, and reduce the number of high-level signals in the multiple off-control signals during the second voltage-rising stage. It can be seen that the present application can automatically identify the different stages of the power semiconductor device's on-off process and adjust different drive currents for different stages, thereby achieving refined drive, which not only reduces the switching loss of the power semiconductor device but also suppresses voltage and current overshoots.

[0055] The driving method provided in the present application can automatically adjust the turn-on driving current and turn-off driving current as the working conditions (voltage, current, temperature, etc.) of the power semiconductor device change, and has good applicability. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions in the present application or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0057] Figure 1 1 is a schematic structural diagram of an adaptive gate driving device in an embodiment of the present application;

[0058] Figure 2 A schematic structural diagram of a detection module in an embodiment of the present application;

[0059] Figure 3 This is a schematic structural diagram of a control module in an embodiment of the present application;

[0060] Figure 4 This is a schematic structural diagram of a driving module in an embodiment of the present application;

[0061] Figure 5a is another schematic structural diagram of a driving module in an embodiment of the present application;

[0062] Figure 5b is another schematic structural diagram of a driving module in an embodiment of the present application;

[0063] Figure 5c is another schematic structural diagram of a driving module in an embodiment of the present application;

[0064] Figure 6 is another schematic structural diagram of the adaptive gate driving device in an embodiment of the present application;

[0065] Figure 7 Schematic diagram of waveforms of relevant voltages during the turn-on and turn-off processes of a semiconductor power device in an embodiment of the present application;

[0066] Figure 8 This is a schematic flowchart of the adaptive gate driving method in an embodiment of the present application. DETAILED DESCRIPTION

[0067] The technical solution in this application will be described below with reference to the accompanying drawings.

[0068] The terms "first," "second," and the like in the description, embodiments, claims, and drawings of this application are used solely for descriptive purposes and are not to be construed as indicating or implying relative importance or order. Furthermore, the terms "including," "having," and any variations thereof are intended to cover non-exclusive inclusions, such as, for example, inclusion of a series of steps or units. A method, system, product, or apparatus is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0069] It should be understood that in this application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following items" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0070] The present application provides an adaptive gate drive device that can be used to drive a power semiconductor device. Among them, the power semiconductor device can be a voltage-controlled semiconductor device. In the embodiment of the present application, the power semiconductor device can be a silicon-based or silicon carbide-based insulated gate bipolar transistor (IGBT), and can also be a silicon-based or silicon carbide-based metal oxide semiconductor field-effect transistor (MOSFET). In addition to IGBT and MOSFET, the drive device 100 provided in the present application can also be used to drive other voltage-controlled power semiconductor devices. In the embodiment of the present application, MOSFET is used as an example for illustration.

[0071] like Figure 1 As shown, the driving device 100 may include a detection module 10 , a control module 20 and a driving module 30 .

[0072] The detection module 10 is used to: output a first voltage rising signal (represented by Vgs_on), a first voltage falling signal (represented by Vgs_off), a second voltage rising signal (represented by Vds_off) and a second voltage falling signal (represented by Vds_on) based on a first voltage of the gate in the power semiconductor device (represented by Vgs), a second voltage between the first electrode (represented by the drain of the MOSFET or the collector of the IGBT) and the second electrode (represented by Vds, i.e., the drain-source voltage or the collector-emitter voltage).

[0073] The control module 20 is used to: output multiple on-control signals (which can be represented by Von) based on the drive signal from the external control system (which can be a pulse width modulation signal, abbreviated as PWM modulation signal), the first voltage rising signal Vgs_on and the second voltage falling signal Vds_on, and output multiple off-control signals (which can be represented by Voff) based on the drive signal, the first voltage falling signal Vds_off and the second voltage rising signal Vds_off.

[0074] The driving module 30 is used to drive a power semiconductor device (ie, MOSFET) according to a plurality of turn-on control signals and a plurality of turn-off control signals.

[0075] In some possible implementations, such as Figure 2 As shown, the detection module 10 includes a first input unit 11, a second input unit 12, a first output unit 13, and a second output unit 14. The first input unit 11 is connected to the gate, and the first input unit 11 is also connected to the first output unit 13. The second input unit 12 is connected to the first electrode, and the second input unit 12 is also connected to the second output unit 14.

[0076] The first input unit 11 is used to collect the first voltage Vgs and output a first voltage change rate (which can be represented by Vgsd) according to the first voltage Vgs.

[0077] The second input unit 12 is used to collect the second voltage Vds and output a second voltage change rate (which can be represented by Vdsd) according to the second voltage Vds.

[0078] The first output unit 13 is configured to output a first voltage-increasing signal Vgs_on and a first voltage-decreasing signal Vgs_off according to a first voltage changing rate Vgsd.

[0079] The second output unit 14 is configured to output a second voltage-increasing signal Vds_off and a second voltage-decreasing signal Vds_on according to the second voltage changing rate Vdsd.

[0080] Exemplarily, when the first voltage Vgs rises, the first voltage change rate Vgsd is a positive voltage, the first voltage rising signal Vgs_on is a high-level signal, and the first voltage falling signal Vgs_off is a low-level signal.

[0081] When the first voltage Vgs decreases, the first voltage change rate Vgsd is a negative voltage, the first voltage rising signal Vgs_on is a low level signal, and the first voltage falling signal Vgs_off is a high level signal.

[0082] When the first voltage Vgs is constant, the first voltage change rate Vgsd is zero, and the first voltage increasing signal Vgs_on and the first voltage decreasing signal Vgs_off are both low-level signals.

[0083] Optionally, when the second voltage Vds rises, the second voltage change rate Vdsd is a positive voltage, the second voltage rising signal Vds_off is a high-level signal, and the second voltage falling signal Vds_on is a low-level signal.

[0084] When the second voltage Vds decreases, the second voltage change rate Vdsd is a negative voltage, the second voltage rising signal Vds_off is a low level signal, and the second voltage falling signal Vds_on is a high level signal.

[0085] When the second voltage Vds is constant, the second voltage change rate Vdsd is zero, and the second voltage increasing signal Vds_off and the second voltage decreasing signal Vds_on are both low-level signals.

[0086] In some other possible implementations, such as Figure 3 As shown, the control module 20 includes an opening control unit 21 and a closing control unit 22 .

[0087] The on control unit 21 is used to: when the driving signal is a high level signal, perform logic operations on the first voltage rising signal Vgs_on and the second voltage falling signal Vds_on, identify the second voltage falling stage, and reduce the number of high level signals in the multiple on control signals in the second voltage falling stage.

[0088] In the embodiment of the present application, when the drive signal is a high-level signal, if the first voltage-rising signal Vgs_on is a low-level signal and the second voltage-decreasing signal Vds_on is a high-level signal, it can be identified that this is the second voltage-decreasing phase. Some of the multiple on-control signals output by the control module 20 are high-level signals and some are low-level signals. In other phases, the multiple on-control signals can all be high-level signals until the drive signal becomes a low-level signal. During this process, the multiple off-control signals are all low-level signals.

[0089] The shutdown control unit 22 is used to: when the driving signal is a low level signal, perform logical operations on the first voltage drop signal Vgs_off and the second voltage rise signal Vds_off, identify the second voltage rise stage, and reduce the number of high level signals in multiple shutdown control signals in the second voltage rise stage.

[0090] In the embodiment of the present application, when the drive signal is a low-level signal, if the first voltage drop signal Vgs_off is a low-level signal and the second voltage increase signal Vds_off is a high-level signal, it can be identified that this is the second voltage increase phase. Among the multiple shutdown control signals output by the control module 20, some are high-level signals and some are low-level signals. In other phases, the multiple shutdown control signals can all be high-level signals until the drive signal becomes a high-level signal. During this process, the multiple opening control signals are all low-level signals.

[0091] When the number of high-level signals in the multiple turn-on control signals is large, the turn-on drive current is large; when the number of high-level signals in the multiple turn-on control signal groups is small, the turn-on drive current is small; when the number of high-level signals in the multiple turn-on control signals is zero, the turn-on drive current is zero.

[0092] Similarly, when the number of high-level signals in the multiple shutdown control signals is large, the shutdown drive current is large; when the number of high-level signals in the multiple shutdown control signals is small, the shutdown drive current is small; when the number of high-level signals in the multiple shutdown control signals is zero, the shutdown drive current is zero.

[0093] In another possible implementation, Figure 4 As shown, the driving module 30 includes an on driving unit 31 and a off driving unit 32 .

[0094] The turn-on driving unit 31 is configured to output a turn-on driving current to the power semiconductor device according to a plurality of turn-on control signals.

[0095] The shutdown driving unit 32 is configured to output a shutdown driving current to the power semiconductor device according to a plurality of shutdown control signals.

[0096] Further, such as Figures 5a to 5c As shown, the on-driving unit 31 includes multiple first current control branches 310, and the off-driving unit 32 includes multiple second current control branches 320. In the embodiment of the present application, the on-driving unit 31 includes three first current control branches 310, and the off-driving unit 32 includes three second current control branches 320 as an example for description.

[0097] like Figure 5a and Figure 5c As shown, the first ends of the multiple first current control branches 310 are connected to receive a first operating voltage (which can be represented by VCC). Figure 5b As shown, the first ends of the multiple first current control branches 310 are used to receive multiple first operating voltages (which can be represented by Von1, Von2, and Von3) in a one-to-one correspondence.

[0098] The second ends of the plurality of first current control branches 310 and the first ends of the plurality of second current control branches 320 are connected to serve as the output end of the driving module 30 .

[0099] like Figure 5a and Figure 5c As shown, the second ends of the plurality of second current control branches 320 are connected to receive the second operating voltage (which can be represented by VEE). Figure 5b As shown, the second ends of the plurality of second current control branches 320 are respectively used to receive a plurality of second operating voltages (which can be represented by Voff1 , Voff2 , and Voff3 ) in a one-to-one correspondence.

[0100] Optionally, the first current control branch 310 and / or the second current control branch 320 are variable current branches, or variable voltage branches, or variable resistance branches.

[0101] In the embodiment of this application, Figure 5a As shown, the first current control branch 310 and the second current control branch 320 are variable current branches. The variable current branch includes a first controllable switch S1 and a current source I connected in series.

[0102] Optional, reference Figure 5a The opening driving unit 31 may further include a resistor R10 and a resistor R20. A plurality of first current control branches 310 are connected in parallel and then connected in series with the resistor R10. A plurality of second current control branches 320 are connected in parallel and then connected in series with the resistor R20.

[0103] like Figure 5b As shown, the first current control branch 310 and the second current control branch 320 are variable voltage branches, each comprising a second controllable switch S2 and a first resistor R1 connected in series.

[0104] like Figure 5c As shown, the first current control branch 310 and the second current control branch 320 are variable resistance branches, which include a third controllable switch S3 and a second resistor R2.

[0105] During the power semiconductor device's turn-on process, after the control module 20 receives the drive signal, the drive module 30 outputs the maximum turn-on drive current to accelerate the power semiconductor device's turn-on process. By detecting the first and second voltages, it is determined that the power semiconductor device has entered the second voltage drop phase, and the turn-on drive current is reduced to reduce current overshoot in the power semiconductor device. After the second voltage drop phase ends, the turn-on drive current is further increased to accelerate the rise of the first voltage to the maximum turn-on voltage, thereby reducing turn-on losses in the power semiconductor device.

[0106] During the shutdown process of the power semiconductor device, after the control module 20 receives the drive signal, the drive module 30 outputs the maximum shutdown drive current to accelerate the shutdown process of the power semiconductor device. By detecting the first voltage and the second voltage, it is determined that the power semiconductor device has entered the second voltage rise phase. The shutdown drive current of the power semiconductor device is reduced to reduce the voltage overshoot of the power semiconductor device. After the second voltage rise phase ends, the shutdown current of the power semiconductor device is further increased to accelerate the speed at which the second voltage drops to the minimum shutdown voltage, thereby reducing the shutdown loss of the power semiconductor device.

[0107] The embodiment of the present application provides a variable resistance branch as an example, Figure 6 The drive device 100 shown in FIG. Figure 6 The driving device 100 shown in the figure is used to describe the working principle of the driving device 100 in combination with the accompanying drawings:

[0108] refer to Figure 7 At time t0, the drive signal Vdriver changes from a low-level signal to a high-level signal, and the power semiconductor device enters the turn-on stage. Multiple turn-on control signals are all high-level signals, and multiple turn-off control signals are all low-level signals. The turn-on current of the power semiconductor device is the largest, which speeds up the turn-on speed of the power semiconductor device.

[0109] At time t1, the first voltage rising signal Vgs_on is a low level signal and the second voltage falling signal Vds_on is a high level signal. The first voltage Vgs and the second voltage Vds enter the second voltage falling process. Among the multiple turn-on control signals, there are some high level signals and some low level signals. The turn-on current of the power semiconductor device is reduced, thereby reducing the current overshoot of the power semiconductor device. Figure 7 It can be seen that the first voltage of the power semiconductor device rises to the Miller platform voltage Vmp at time t1.

[0110] At time t2, the first voltage rising signal Vgs_on is a high-level signal or the second voltage falling signal Vds_on is a low-level signal, exiting the second voltage falling stage, multiple turn-on control signals are all high-level signals, the turn-on current of the power semiconductor device increases, and the first voltage of the power semiconductor device is accelerated to rise to the first operating voltage VCC.

[0111] At time t3, the drive signal Vdriver becomes a low-level signal, and the power semiconductor device enters the shutdown stage. Multiple turn-on control signals are all low-level signals, and multiple turn-off control signals are all high-level signals. The turn-off current of the power semiconductor device is the largest, which accelerates the shutdown speed of the power semiconductor device.

[0112] At time t4, the first voltage drop signal Vgs_off is a low-level signal and the second voltage rise signal Vds_off is a high-level signal, entering the second voltage rise process. Some of the multiple shutdown control signals are high-level signals and some are low-level signals. The shutdown current of the power semiconductor device is reduced, thereby reducing the second voltage overshoot.

[0113] At time t5, the first voltage drop signal Vgs_off is high or the second voltage rise signal Vds_off is low, exiting the second voltage rise process. The multiple shutdown control signals are all high, and the shutdown current of the power semiconductor device increases, accelerating the first voltage to drop to the second operating voltage VEE.

[0114] The embodiment of the present application also provides an adaptive gate driving method. Figure 8 As shown, the driving method 200 may include:

[0115] Step S1: Figure 1 The detection module 10 outputs a first voltage rising signal Vgs_on, a first voltage falling signal Vgs_off, a second signal falling signal Vds_on and a second voltage rising signal Vds_off to the control module 20 according to the first voltage Vgs of the gate and the second voltage Vds between the first pole and the second pole in the power semiconductor device.

[0116] Step S2 : the control module 20 outputs a plurality of on control signals according to the driving signal, the first voltage rising signal Vgs_on and the second voltage falling signal Vds_on, and outputs a plurality of off control signals according to the driving signal, the first voltage falling signal Vgs_off and the second voltage rising signal Vds_off to the driving module 30 .

[0117] Step S3: the driving module 30 drives the power semiconductor device according to the multiple turn-on control signals and the multiple turn-off control signals.

[0118] In some possible implementations, in step S1, the detection module 10 outputs a first voltage-increasing signal Vgs_on, a first voltage-decreasing signal Vgs_off, a second voltage-decreasing signal Vds_on, and a second voltage-increasing signal Vds_off to the control module according to the first voltage Vgs of the gate and the second voltage Vds between the first electrode and the second electrode in the power semiconductor device, including:

[0119] The first input unit 11 collects the first voltage Vgs and outputs a first voltage change rate Vgsd according to the first voltage Vgs.

[0120] The second input unit 12 collects the second voltage Vds and outputs a second voltage change rate Vdsd according to the second voltage Vds.

[0121] The first output unit 13 outputs a first voltage-increasing signal Vgs_on and a first voltage-decreasing signal Vgs_off according to the first voltage change rate Vgsd.

[0122] The second output unit 14 outputs a second voltage-falling signal Vds_on and a second voltage-rising signal Vds_off according to the second voltage change rate Vdsd.

[0123] Exemplarily, when the first voltage Vgs rises, the first voltage change rate Vgsd is a positive voltage, the first voltage rising signal Vgs_on is a high-level signal, and the first voltage falling signal Vgs_off is a low-level signal.

[0124] When the first voltage Vgs decreases, the first voltage change rate Vgsd is a negative voltage, the first voltage rising signal Vgs_on is a low level signal, and the first voltage falling signal Vgs_off is a high level signal.

[0125] When the first voltage Vgs is constant, the first voltage change rate Vgsd is zero, and the first voltage increasing signal Vgs_on and the first voltage decreasing signal Vgs_off are both low-level signals.

[0126] Optionally, when the second voltage Vds rises, the second voltage change rate Vdsd is a positive voltage, the second voltage rising signal Vds_off is a high-level signal, and the second voltage falling signal Vds_on is a low-level signal.

[0127] When the second voltage Vds decreases, the second voltage change rate Vdsd is a negative voltage, the second voltage rising signal Vds_off is a low level signal, and the second voltage falling signal Vds_on is a high level signal.

[0128] When the second voltage Vds is constant, the second voltage change rate Vdsd is zero, and the second voltage increasing signal Vds_off and the second voltage decreasing signal Vds_on are both low-level signals.

[0129] In another possible implementation, in step S2, the control module 20 outputs a plurality of on-control signals according to the drive signal, the first voltage rising signal Vgs_on, and the second voltage falling signal Vds_on, and outputs a plurality of off-control signals to the drive module 30 according to the drive signal, the first voltage falling signal Vgs_off, and the second voltage rising signal Vds_off, including:

[0130] When the driving signal is a high level signal, the opening control unit 21 performs a logic operation on the first voltage rising signal Vgs_on and the second voltage falling signal Vds_on, identifies the second voltage falling stage, and reduces the number of high level signals in the multiple opening control signals in the second voltage falling stage.

[0131] When the driving signal is a low level signal, the shutdown control unit 22 performs a logic operation on the first voltage drop signal Vgs_off and the second voltage rise signal Vds_off, identifies the second voltage rise stage, and reduces the number of high level signals in the multiple shutdown control signals in the second voltage rise stage.

[0132] In another possible implementation, in step S3, the driving module 30 drives the power semiconductor device according to the multiple turn-on control signals and the multiple turn-off control signals, including:

[0133] The turn-on driving unit 31 outputs a turn-on driving current to the power semiconductor device according to a plurality of turn-on control signals.

[0134] The shutdown driving unit 32 outputs a shutdown driving current to the power semiconductor device according to a plurality of shutdown control signals.

[0135] It can be imagined that the turn-on drive current and the turn-off drive current constitute a drive current for driving the power semiconductor device to turn on and off.

[0136] The above are merely embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application are included in the scope of the claims of the present application to be approved.

Claims

1. An adaptive gate driving device, characterized in that: It includes a detection module, a control module and a drive module; The detection module is used to: output a first voltage rising signal, a first voltage falling signal, a second voltage rising signal, and a second voltage falling signal according to a first voltage of the gate and a second voltage between the first electrode and the second electrode in the power semiconductor device; The control module is configured to: output a plurality of on-control signals according to the driving signal, the first voltage-rising signal, and the second voltage-falling signal; and output a plurality of off-control signals according to the driving signal, the first voltage-falling signal, and the second voltage-rising signal; The driving module is configured to drive the power semiconductor device according to the multiple turn-on control signals and the multiple turn-off control signals.

2. The driving device according to claim 1, characterized in that The detection module includes a first input unit, a second input unit, a first output unit, and a second output unit; the first input unit is connected to the gate, the first input unit is also connected to the first output unit, the second input unit is connected to the first electrode, and the second input unit is also connected to the second output unit; The first input unit is used to: collect the first voltage and output a first voltage change rate according to the first voltage; The second input unit is used to: collect the second voltage and output a second voltage change rate according to the second voltage; The first output unit is configured to: output the first voltage increase signal and the first voltage decrease signal according to the first voltage change rate; The second output unit is configured to output the second voltage increase signal and the second voltage decrease signal according to the second voltage change rate.

3. The driving device according to claim 2, characterized in that When the first voltage rises, the first voltage change rate is a positive voltage, the first voltage rising signal is a high level signal, and the first voltage falling signal is a low level signal; When the first voltage decreases, the first voltage change rate is a negative voltage, the first voltage rising signal is a low level signal, and the first voltage falling signal is a high level signal; When the first voltage remains unchanged, the first voltage change rate is zero, and the first voltage increase signal and the first voltage decrease signal are both low-level signals.

4. The driving device according to claim 2, characterized in that When the second voltage rises, the second voltage change rate is a positive voltage, the second voltage rising signal is a high level signal, and the second voltage falling signal is a low level signal; When the second voltage decreases, the second voltage change rate is a negative voltage, the second voltage rising signal is a low level signal, and the second voltage falling signal is a high level signal; When the second voltage remains unchanged, the second voltage change rate is zero, and the second voltage increase signal and the second voltage decrease signal are both low-level signals.

5. The driving device according to claim 1, characterized in that The control module includes an opening control unit and a closing control unit; The opening control unit is configured to: when the driving signal is a high-level signal, perform a logic operation on the first voltage-increasing signal and the second voltage-decreasing signal, identify a second voltage-decreasing stage, and reduce the number of high-level signals in the plurality of opening control signals during the second voltage-decreasing stage; The shutdown control unit is used to: when the driving signal is a low-level signal, perform a logical operation on the first voltage drop signal and the second voltage rise signal, identify the second voltage rise stage, and reduce the number of high-level signals in the multiple shutdown control signals during the second voltage rise stage.

6. The driving device according to claim 1, characterized in that The driving module includes an on-driving unit and a off-driving unit; The turn-on driving unit is configured to output a turn-on driving current to the power semiconductor device according to the plurality of turn-on control signals; The shutdown driving unit is configured to output a shutdown driving current to the power semiconductor device according to the multiple shutdown control signals.

7. The driving device according to claim 6, characterized in that The on-driving unit includes a plurality of first current control branches, and the off-driving unit includes a plurality of second current control branches; The first ends of the plurality of first current control branches are connected to receive a first operating voltage; or the first ends of the plurality of first current control branches are used to receive a plurality of first operating voltages in a one-to-one correspondence; The second ends of the plurality of first current control branches are connected to the first ends of the plurality of second current control branches, and the second ends of the plurality of first current control branches and the first ends of the plurality of second current control branches serve as output ends of the driving module; The second ends of the plurality of second current control branches are connected to receive a second operating voltage; or the second ends of the plurality of second current control branches are used to receive a plurality of second operating voltages in a one-to-one correspondence.

8. The driving device according to claim 7, characterized in that The first current control branch and / or the second current control branch is a variable current branch, and the variable current branch includes a first controllable switch and a current source connected in series; or, The first current control branch and / or the second current control branch is a variable voltage branch, and the variable voltage branch includes a second controllable switch and a first resistor connected in series; or, The first current control branch and / or the second current control branch is a variable resistance branch, and the variable resistance branch includes a third controllable switch and a second resistor.

9. An adaptive gate driving method, characterized in that: include: The detection module outputs a first voltage rising signal, a first voltage falling signal, a second voltage rising signal, and a second voltage falling signal to the control module according to the first voltage of the gate and the second voltage between the first electrode and the second electrode in the power semiconductor device; The control module outputs a plurality of on-control signals according to the driving signal, the first voltage-rising signal, and the second voltage-falling signal, and outputs a plurality of off-control signals to the driving module according to the driving signal, the first voltage-falling signal, and the second voltage-rising signal; The driving module drives the power semiconductor device according to the multiple turn-on control signals and the multiple turn-off control signals.

10. The driving method according to claim 9, wherein: The detection module outputs a first voltage rising signal, a first voltage falling signal, a second voltage rising signal, and a second voltage falling signal to the control module according to a first voltage of the gate and a second voltage between the first electrode and the second electrode in the power semiconductor device, including: The first input unit of the detection module collects the first voltage and outputs a first voltage change rate according to the first voltage; The second input unit of the detection module collects the second voltage and outputs a second voltage change rate according to the second voltage; The first output unit of the detection module outputs the first voltage rising signal and the first voltage falling signal according to the first voltage change rate; The second output unit of the detection module outputs the second voltage increase signal and the second voltage decrease signal according to the second voltage change rate.

11. The driving method according to claim 10, wherein: When the first voltage rises, the first voltage change rate is a positive voltage, the first voltage rising signal is a high level signal, and the first voltage falling signal is a low level signal; When the first voltage decreases, the first voltage change rate is a negative voltage, the first voltage rising signal is a low level signal, and the first voltage falling signal is a high level signal; When the first voltage remains unchanged, the first voltage change rate is zero, and the first voltage increase signal and the first voltage decrease signal are both low-level signals.

12. The driving method according to claim 10, wherein: When the second voltage rises, the second voltage change rate is a positive voltage, the second voltage rising signal is a high level signal, and the second voltage falling signal is a low level signal; When the second voltage decreases, the second voltage change rate is a negative voltage, the second voltage rising signal is a low level signal, and the second voltage falling signal is a high level signal; When the second voltage remains unchanged, the second voltage change rate is zero, and the second voltage increase signal and the second voltage decrease signal are both low-level signals.

13. The driving method according to claim 9, wherein: The control module outputs a plurality of turn-on control signals according to the driving signal, the first voltage rising signal, and the second voltage falling signal, and outputs a plurality of turn-off control signals to the driving module according to the driving signal, the first voltage falling signal, and the second voltage rising signal, including: The activation control unit of the control module performs a logic operation on the first voltage rising signal and the second voltage falling signal when the driving signal is a high-level signal, identifies a second voltage falling stage, and reduces the number of high-level signals in the plurality of activation control signals during the second voltage falling stage; The shutdown control unit of the control module performs a logic operation on the first voltage drop signal and the second voltage rise signal when the driving signal is a low-level signal, identifies the second voltage rise stage, and reduces the number of high-level signals in the multiple shutdown control signals during the second voltage rise stage.

14. The driving method according to claim 9, wherein: The driving module drives the power semiconductor device according to the multiple turn-on control signals and the multiple turn-off control signals, including: The on-drive unit of the driving module outputs an on-drive current to the power semiconductor device according to the multiple on-control signals; The shutdown driving unit of the driving module outputs a shutdown driving current to the power semiconductor device according to the multiple shutdown control signals.

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