Method and device for determining relative liquid level position in crystal growth process

Abstract

The invention provides a method and device for determining the relative liquid level position in the crystal growth process, and the method comprises the steps: respectively obtaining crystal center coordinates (X1, Y1), (X3, Y3) and corresponding heat shield center coordinates (X2, Y2) and (X4, Y4) in the first and second equal-diameter processes through a visual detection device in the crystal equal-diameter growth stage, calculating the relative deviations Z1 = Y2-Y1 and Z2 = Y4-Y3 of the two times, the target liquid level distance is dynamically adjusted according to the coordinate difference value of Y2 and Y4, and it is ensured that the liquid level relative position in the current equal-diameter process is consistent with that in the historical process; the influence of liquid level fluctuation on the crystal quality can be reduced, and the crystal growth quality and the process stability are remarkably improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor material preparation, and in particular to a method and device for determining a relative liquid surface position during crystal growth. Background Art

[0002] In the existing crystal pulling process, the relative liquid level position of the equal-diameter step is output by the reflection of a single measuring guide tube and controlled by PID and other methods to control the longitudinal temperature gradient during crystal growth and ensure the dynamics of crystal growth.

[0003] However, the existing method has the following disadvantages: first, it is only measured by CCD, and the data input end is single; second, if silicon splashing occurs on the guide tube / thermal shield, the measurement will be unavailable; third, when the thermal field component is shifted or tilted, the measurement results between the two equal diameters will deviate. Summary of the Invention

[0004] In view of this, the embodiments of the present application provide a method and device for determining the relative liquid level position during crystal growth, which can reduce the impact of liquid level fluctuations on crystal quality and improve crystal growth quality and process stability.

[0005] The technical solution of the embodiment of the present application is implemented as follows:

[0006] In a first aspect, embodiments of the present application provide a method for determining a relative liquid level position during crystal growth, the method comprising:

[0007] Obtaining the first crystal center coordinates (X1, Y1) and the first heat shield center coordinates (X2, Y2) during the first diameter equalization process through a visual inspection device, and calculating a first relative deviation Z1=Y2-Y1 based on the first heat shield center coordinates and the first crystal center coordinates;

[0008] Obtain the second crystal center coordinates (X3, Y3) and the second heat shield center coordinates (X4, Y4) in the second diameter equalization process, and calculate the second relative deviation Z2 = Y4-Y3;

[0009] The target liquid level distance is dynamically adjusted based on the coordinate difference between Y2 and Y4 so that the relative position of the liquid level in the current equal diameter process is consistent with that in the historical equal diameter process.

[0010] In a second aspect, an embodiment of the present application further provides a device for determining a relative liquid level position during crystal growth, the device comprising:

[0011] a first detection module, configured to obtain, by a visual detection device, the first crystal center coordinates (X1, Y1) and the first heat shield center coordinates (X2, Y2) during the first diameter equalization process, and calculate a first relative deviation Z1=Y2-Y1 based on the first heat shield center coordinates and the first crystal center coordinates;

[0012] The second detection module is used to obtain the second crystal center coordinates (X3, Y3) and the second heat shield center coordinates (X4, Y4) in the second diameter equalization process, and calculate the second relative deviation Z2 = Y4-Y3;

[0013] The adjustment module is used to dynamically adjust the target liquid level distance based on the coordinate difference between Y2 and Y4, so that the relative position of the liquid level in the current equal diameter process remains consistent with that in the historical equal diameter process.

[0014] In a third aspect, an embodiment of the present application further provides an electronic device comprising: a processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor. When the electronic device is running, the processor communicates with the storage medium via the bus, and the processor executes the machine-readable instructions to execute the method for determining the relative liquid level position during crystal growth as described in any one of the first aspects.

[0015] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the method for determining the relative liquid level position during the crystal growth process described in any one of the first aspects is executed.

[0016] The embodiments of the present application have the following beneficial effects:

[0017] By using a visual inspection device to accurately capture the center coordinates of the crystal and the thermal screen during the two equal-diameter processes, and dynamically adjusting the target liquid level distance after calculating the relative deviation, the relative position of the liquid level in each equal-diameter process is highly consistent, effectively avoiding random fluctuations in the liquid level, and keeping key parameters of the crystal growth environment such as temperature gradient and solute distribution stable, thereby greatly improving the purity and structural integrity of the crystal, and ensuring the uniformity and stability of its optical, electrical and other properties. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0019] Figure 110 is a flow chart of steps S101-S103 provided in an embodiment of the present application;

[0020] Figure 2 It is a flowchart of steps S201-S202 provided in an embodiment of the present application;

[0021] Figure 3 1 is a schematic structural diagram of a device for determining a relative liquid level position during a crystal growth process provided by an embodiment of the present application;

[0022] Figure 4 It is a schematic diagram of the composition structure of the electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of illustration and description and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in this application illustrate the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowcharts can be implemented out of sequence, and steps without logical context can be reversed or implemented simultaneously. In addition, those skilled in the art, under the guidance of the contents of this application, can add one or more other operations to the flowchart, or remove one or more operations from the flowchart.

[0024] In the following description, reference is made to “some embodiments”, which describes a subset of all possible embodiments, but it will be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0025] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0026] In the following description, the terms "first\second\third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0027] It should be noted that the term "comprising" will be used in the embodiments of the present application to indicate the existence of the features declared thereafter, but does not exclude the addition of other features.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. The terms used herein are for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0029] See also Figure 1 , Figure 1 This is a flow chart of steps S101-S103 of the method for determining the relative liquid level position during crystal growth provided in the embodiment of the present application, which will be combined with Figure 1 Steps S101-S103 are shown for explanation.

[0030] In step S101, the first crystal center coordinates (X1, Y1) and the first heat shield center coordinates (X2, Y2) in the first diameter equalization process are obtained by a visual detection device, and a first relative deviation Z1=Y2-Y1 is calculated based on the first heat shield center coordinates and the first crystal center coordinates.

[0031] In step S102 , the second crystal center coordinates ( X3 , Y3 ) and the second heat shield center coordinates ( X4 , Y4 ) in the second diameter equalization process are obtained, and a second relative deviation Z2 = Y4 − Y3 is calculated.

[0032] In step S103, the target liquid level distance is dynamically adjusted based on the coordinate difference between Y2 and Y4, so that the relative position of the liquid level in the current equal diameter process remains consistent with that in the historical equal diameter process.

[0033] Here, first, a high-resolution industrial camera (resolution 0.05mm / pixel) is installed in the single crystal furnace to capture real-time images of the crystal growth interface and the heat shield at the same time during the equal-diameter stage; then the image is processed, including but not limited to using the Hough circle detection algorithm to process the image, and respectively identify the center coordinates (X1, Y1) of the crystal growth interface and the center coordinates (X2, Y2) of the heat shield, and the coordinate origin can be set at the mechanical center of the furnace body; then, the control system automatically calculates the first relative deviation Z1=Y2-Y1 in the Y-axis direction, and stores the value in the historical database; calculates the crystal center coordinates (X3, Y3) and heat shield coordinates (X4, Y4) stored in the second equal-diameter process, and calculates the second relative deviation Z2=Y4-Y3; finally, the seed crystal pulling speed is dynamically adjusted by the PID controller so that the absolute deviation between the current Z1 value and the previous Z2 value is ≤0.5mm, thereby achieving consistency control of the liquid level position across furnaces.

[0034] In some embodiments, the dynamic adjustment includes:

[0035] When |Y2-Y4|≤0.5mm, the current crystal center offset is controlled to Z1;

[0036] When |Y2-Y4|>0.5mm, the current crystal center offset is controlled to be Z1+(Y2-Y4).

[0037] Here, when the system detects the difference between the current thermal screen center Y2 and the previous Y4:

[0038] If |Y2-Y4|≤0.5mm (for example, Y2=150.2mm, Y4=150.6mm), then Z1=Y2-Y1 is directly used as the compensation amount, and the actuator is controlled to adjust the liquid level position in steps of 0.1mm / s;

[0039] If |Y2-Y4|>0.5mm (for example, Y2=152.3mm, Y4=150.8mm), the composite compensation mode is activated:

[0040] (1) Calculate the heat shield displacement ΔY = Y2 - Y4 = 1.5 mm;

[0041] (2) Superimposed historical deviation Z1 = Y2 - Y1 = 3.2 mm;

[0042] (3) Total compensation amount = Z1 + ΔY = 4.7 mm;

[0043] (4) The crucible lifting mechanism is driven by a servo motor to complete position compensation with an accuracy of 0.05 mm / s.

[0044] In some embodiments, see Figure 2 , Figure 2It is a flow chart of steps S201-S202 provided in an embodiment of the present application. The method also includes steps S201-S202, which will be described in combination with each step.

[0045] In step S201 , a multi-dimensional input parameter set is established.

[0046] In step S202, the growth of the equal-diameter early crystal is analyzed and processed based on the input parameter set; wherein the parameter set at least includes liquid nozzle distance data, crystal diameter growth rate, thermal field temperature distribution map and real-time liquid level fluctuation frequency.

[0047] In the embodiment of the present application, the following data can be collected simultaneously during the equal diameter stage:

[0048] Liquid mouth distance: measured in real time by laser distance meter, accuracy ±0.1mm;

[0049] Growth rate: calculated by the change in crystal diameter, with a sampling interval of 10 seconds;

[0050] Temperature distribution: multiple groups of K-type thermocouples are arranged in the thermal field to generate a two-dimensional temperature field map;

[0051] Liquid level fluctuation: detected by millimeter wave radar with a frequency resolution of 0.1Hz;

[0052] The above data is then input into the LSTM neural network, and a liquid level position prediction model is trained to analyze the growth of early-stage crystals with equal diameters.

[0053] In some embodiments, the method further comprises:

[0054] When silicon splashing is detected on the guide tube or heat shield, the system switches to the circle center coordinate relative positioning mode and calculates the actual liquid level position based on the geometric relationship between the crystal center and the heat shield center.

[0055] The embodiment of the present application performs the following processing for the silicon sputtering condition:

[0056] When the optical sensor detects that the transmittance of the guide tube drops by more than 30% (determined to be silicon splashing), it switches to the geometric positioning mode and disables direct liquid level measurement; then the actual liquid level position is calculated through the dual-center geometric relationship.

[0057] For example: the crystal radius R = 75mm, the heat shield inner diameter r = 200mm

[0058] The equation can be established: Where ΔL is the change in liquid level, and the solution is Finally, the ΔL value is input into the fuzzy controller to complete the liquid level closed-loop control.

[0059] In some embodiments, the method further comprises:

[0060] Compensate for the position offset of thermal field components as follows:

[0061] A thermal field coordinate system conversion model is constructed to map the thermal screen center coordinate change ΔY=Y4-Y2 into the compensation displacement of the crystal pulling mechanism.

[0062] Here, when the heat shield center is detected to have shifted from the first heat shield center coordinate (X2, Y2) to the second heat shield center coordinate (X4, Y4), the change in heat shield center coordinates is calculated as ΔY = Y4 - Y2. Based on the crystal growth kinetics model, the compensation amount C = K * ΔY, where K is the thermal expansion coefficient. The seed rod position is then adjusted using the lead screw mechanism to achieve compensation.

[0063] In some embodiments, the visual inspection device includes a dual-wavelength high-temperature imaging camera group, which includes an anti-pollution filter made of yttrium oxide, and the sampling frequency of the dual-wavelength high-temperature imaging camera group is not less than 10 Hz.

[0064] Here, the camera group can be configured as a main camera and an auxiliary camera. The main camera can be a short-wave infrared camera used to penetrate high-temperature radiation; the auxiliary camera is a visible light high-speed camera equipped with an yttrium oxide-coated filter;

[0065] A rotatable ceramic filter can be installed in front of the camera lens, which automatically rotates 15° every 10 minutes to switch the cleaning side, and is equipped with an argon nozzle, which pulses and purges for seconds after each shot.

[0066] The camera group uses an FPGA controller to synchronize the exposure time of the dual cameras to reduce errors, and is linked with the furnace body rotary encoder to shoot alternately at different workstations.

[0067] In some embodiments, the method further comprises:

[0068] By maintaining the consistency of the relative position of the liquid surface in each equal diameter process, the longitudinal temperature gradient fluctuation of the crystal is controlled within a specific temperature gradient range.

[0069] The temperature gradient of the embodiment of the present application can be controlled by the following methods:

[0070] The longitudinal temperature gradient is measured once every specific time in the constant diameter stage. For example, when a gradient deviation of >2°C / mm is detected, position compensation is started, and the compensation amount ΔH = 0.25*(T_meas-T_target)(mm / °C); in addition, a gradient transition zone can be set in the shoulder area of the crystal, or a gradient annealing process can be used, and the annealing rate and the position compensation amount are controlled in a linkage manner.

[0071] In summary, the embodiments of the present application have the following beneficial effects:

[0072] (1) The embodiment of the present application uses a visual inspection device to accurately obtain the coordinates of the crystal and the center of the heat shield, calculate the relative deviation, and dynamically adjust the target liquid level distance to ensure that the relative position of the liquid level in each equal diameter process is stable and consistent. The stable liquid level position can create a highly stable crystal growth environment, effectively reducing crystal growth defects caused by liquid level fluctuations, such as dislocations and inclusions, making the internal structure of the crystal more uniform and dense, and the physical and chemical properties highly consistent, greatly improving the overall quality and performance of the crystal product, and meeting the stringent requirements of high-end application fields for crystal quality.

[0073] (2) The embodiment of the present application achieves standardized and intelligent liquid level position adjustment by setting a quantitative association rule between |Y2-Y4| and the crystal center offset. This dynamic adjustment mechanism can quickly respond to slight differences in liquid level position between different equal diameter processes, automatically adjust the current crystal center offset to an appropriate value, and ensure high consistency and repeatability of each batch of crystal growth process. It effectively reduces the risk of process instability caused by human operation errors or environmental fluctuations, improves production efficiency and product yield, and provides a solid guarantee for large-scale stable production.

[0074] (3) When detecting an unexpected silicon splash from the guide tube or heat shield, the embodiment of the present application can switch to the circle center coordinate relative positioning mode, using the geometric relationship between the crystal center and the heat shield center to accurately calculate the actual liquid level position, breaking through the interference limitation of silicon splash on visual detection, ensuring that the liquid level position information can still be accurately grasped in the event of equipment abnormalities, and maintaining the continuity of the crystal growth process. This effectively reduces production interruptions and crystal scrapping caused by unexpected failures, and significantly enhances the fault tolerance and risk resistance of the production process.

[0075] (4) The present embodiment establishes a multi-dimensional input parameter set, covering key parameters such as liquid nozzle distance, crystal diameter growth rate, thermal field temperature distribution, and liquid surface fluctuation frequency, to conduct in-depth analysis of the early growth of equal-diameter crystals, gaining early insights into potential problems and optimizing process parameters. Furthermore, a thermal field coordinate system conversion model is constructed to accurately map the change in the center coordinates of the heat shield to the compensation displacement of the crystal pulling mechanism, effectively compensating for the impact of the thermal field component position offset on the liquid surface position. The two work together to comprehensively improve the stability and controllability of the crystal growth process from the two dimensions of process optimization and equipment adaptation.

[0076] Based on the same inventive concept, the embodiments of the present application also provide a device for determining the relative liquid level position during crystal growth, which corresponds to the method for determining the relative liquid level position during crystal growth in the first embodiment. Since the principle of solving the problem by the device in the embodiments of the present application is similar to the above-mentioned method for determining the relative liquid level position during crystal growth, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be repeated.

[0077] like Figure 3 As shown, Figure 3 : is a schematic diagram of the structure of the device 300 for determining the relative liquid level position during crystal growth provided in an embodiment of the present application. The device 300 for determining the relative liquid level position during crystal growth includes:

[0078] A first detection module 301 is configured to obtain, through a visual detection device, the first crystal center coordinates (X1, Y1) and the first heat shield center coordinates (X2, Y2) during the first diameter equalization process, and calculate a first relative deviation Z1=Y2-Y1 based on the first heat shield center coordinates and the first crystal center coordinates;

[0079] The second detection module 302 is used to obtain the second crystal center coordinates (X3, Y3) and the second heat shield center coordinates (X4, Y4) in the second diameter equalization process, and calculate the second relative deviation Z2 = Y4-Y3;

[0080] The adjustment module 303 is used to dynamically adjust the target liquid level distance based on the coordinate difference between Y2 and Y4, so that the relative position of the liquid level in the current equal diameter process remains consistent with that in the historical equal diameter process.

[0081] It should be understood by those skilled in the art that Figure 3 The functions implemented by each unit in the device 300 for determining the relative liquid level position during crystal growth can be understood by referring to the related description of the method for determining the relative liquid level position during crystal growth. Figure 3 The functions of the various units in the device 300 for determining the relative liquid level position during crystal growth can be implemented by a program running on a processor, or by a specific logic circuit.

[0082] In a possible implementation, the dynamic adjustment includes:

[0083] When |Y2-Y4|≤0.5mm, the current crystal center offset is controlled to Z1;

[0084] When |Y2-Y4|>0.5mm, the current crystal center offset is controlled to be Z1+(Y2-Y4).

[0085] In one possible implementation, the method further includes:

[0086] Establish a multi-dimensional input parameter set;

[0087] The growth of the early crystal of equal diameter is analyzed and processed based on the input parameter set; wherein the parameter set at least includes liquid mouth distance data, crystal diameter growth rate, thermal field temperature distribution map and real-time liquid level fluctuation frequency.

[0088] In one possible implementation, the method further includes:

[0089] When silicon splashing is detected on the guide tube or heat shield, the system switches to the circle center coordinate relative positioning mode and calculates the actual liquid level position based on the geometric relationship between the crystal center and the heat shield center.

[0090] In one possible implementation, the method further includes:

[0091] Compensate for the position offset of thermal field components as follows:

[0092] A thermal field coordinate system conversion model is constructed to map the thermal screen center coordinate change ΔY=Y4-Y2 into the compensation displacement of the crystal pulling mechanism.

[0093] In one possible embodiment, the visual detection device includes a dual-wavelength high-temperature imaging camera group, the dual-wavelength high-temperature imaging camera group includes an anti-pollution filter made of yttrium oxide, and the sampling frequency of the dual-wavelength high-temperature imaging camera group is not less than 10 Hz.

[0094] In one possible implementation, the method further includes:

[0095] By maintaining the consistency of the relative position of the liquid surface in each equal diameter process, the longitudinal temperature gradient fluctuation of the crystal is controlled within a specific temperature gradient range.

[0096] The above-mentioned device for determining the relative liquid level position during crystal growth has the following beneficial effects:

[0097] (1) The embodiment of the present application uses a visual inspection device to accurately obtain the coordinates of the crystal and the center of the heat shield, calculate the relative deviation, and dynamically adjust the target liquid level distance to ensure that the relative position of the liquid level in each equal diameter process is stable and consistent. The stable liquid level position can create a highly stable crystal growth environment, effectively reducing crystal growth defects caused by liquid level fluctuations, such as dislocations and inclusions, making the internal structure of the crystal more uniform and dense, and the physical and chemical properties highly consistent, greatly improving the overall quality and performance of the crystal product, and meeting the stringent requirements of high-end application fields for crystal quality.

[0098] (2) The embodiment of the present application achieves standardized and intelligent liquid level position adjustment by setting a quantitative association rule between |Y2-Y4| and the crystal center offset. This dynamic adjustment mechanism can quickly respond to slight differences in liquid level position between different equal diameter processes, automatically adjust the current crystal center offset to an appropriate value, and ensure high consistency and repeatability of each batch of crystal growth process. It effectively reduces the risk of process instability caused by human operation errors or environmental fluctuations, improves production efficiency and product yield, and provides a solid guarantee for large-scale stable production.

[0099] (3) When detecting an unexpected silicon splash from the guide tube or heat shield, the embodiment of the present application can switch to the circle center coordinate relative positioning mode, using the geometric relationship between the crystal center and the heat shield center to accurately calculate the actual liquid level position, breaking through the interference limitation of silicon splash on visual detection, ensuring that the liquid level position information can still be accurately grasped in the event of equipment abnormalities, and maintaining the continuity of the crystal growth process. This effectively reduces production interruptions and crystal scrapping caused by unexpected failures, and significantly enhances the fault tolerance and risk resistance of the production process.

[0100] (4) The present embodiment establishes a multi-dimensional input parameter set, covering key parameters such as liquid nozzle distance, crystal diameter growth rate, thermal field temperature distribution, and liquid surface fluctuation frequency, to conduct in-depth analysis of the early growth of equal-diameter crystals, gaining early insights into potential problems and optimizing process parameters. Furthermore, a thermal field coordinate system conversion model is constructed to accurately map the change in the center coordinates of the heat shield to the compensation displacement of the crystal pulling mechanism, effectively compensating for the impact of the thermal field component position offset on the liquid surface position. The two work together to comprehensively improve the stability and controllability of the crystal growth process from the two dimensions of process optimization and equipment adaptation.

[0101] like Figure 4 As shown, Figure 4 This is a schematic diagram of the structure of an electronic device 400 provided in an embodiment of the present application. The electronic device 400 includes:

[0102] A processor 401, a storage medium 402 and a bus 403, wherein the storage medium 402 stores machine-readable instructions executable by the processor 401. When the electronic device 400 is running, the processor 401 communicates with the storage medium 402 via the bus 403, and the processor 401 executes the machine-readable instructions to perform the steps of the method for determining the relative liquid level position during the crystal growth process described in the embodiment of the present application.

[0103] In actual application, the various components in the electronic device 400 are coupled together via the bus 403. It is understood that the bus 403 is used to realize the connection and communication between these components. In addition to the data bus, the bus 403 also includes a power bus, a control bus, and a status signal bus. However, for the sake of clarity, Figure 4 Various buses are labeled as bus 403.

[0104] The electronic device has the following beneficial effects:

[0105] (1) The embodiment of the present application uses a visual inspection device to accurately obtain the coordinates of the crystal and the center of the heat shield, calculate the relative deviation, and dynamically adjust the target liquid level distance to ensure that the relative position of the liquid level in each equal diameter process is stable and consistent. The stable liquid level position can create a highly stable crystal growth environment, effectively reducing crystal growth defects caused by liquid level fluctuations, such as dislocations and inclusions, making the internal structure of the crystal more uniform and dense, and the physical and chemical properties highly consistent, greatly improving the overall quality and performance of the crystal product, and meeting the stringent requirements of high-end application fields for crystal quality.

[0106] (2) The embodiment of the present application achieves standardized and intelligent liquid level position adjustment by setting a quantitative association rule between |Y2-Y4| and the crystal center offset. This dynamic adjustment mechanism can quickly respond to slight differences in liquid level position between different equal diameter processes, automatically adjust the current crystal center offset to an appropriate value, and ensure high consistency and repeatability of each batch of crystal growth process. It effectively reduces the risk of process instability caused by human operation errors or environmental fluctuations, improves production efficiency and product yield, and provides a solid guarantee for large-scale stable production.

[0107] (3) When detecting an unexpected silicon splash from the guide tube or heat shield, the embodiment of the present application can switch to the circle center coordinate relative positioning mode, using the geometric relationship between the crystal center and the heat shield center to accurately calculate the actual liquid level position, breaking through the interference limitation of silicon splash on visual detection, ensuring that the liquid level position information can still be accurately grasped in the event of equipment abnormalities, and maintaining the continuity of the crystal growth process. This effectively reduces production interruptions and crystal scrapping caused by unexpected failures, and significantly enhances the fault tolerance and risk resistance of the production process.

[0108] (4) The present embodiment establishes a multi-dimensional input parameter set, covering key parameters such as liquid nozzle distance, crystal diameter growth rate, thermal field temperature distribution, and liquid surface fluctuation frequency, to conduct in-depth analysis of the early growth of equal-diameter crystals, gaining early insights into potential problems and optimizing process parameters. Furthermore, a thermal field coordinate system conversion model is constructed to accurately map the change in the center coordinates of the heat shield to the compensation displacement of the crystal pulling mechanism, effectively compensating for the impact of the thermal field component position offset on the liquid surface position. The two work together to comprehensively improve the stability and controllability of the crystal growth process from the two dimensions of process optimization and equipment adaptation.

[0109] The embodiment of the present application further provides a computer-readable storage medium, which stores executable instructions. When the executable instructions are executed by at least one processor 401, the method for determining the relative liquid level position during the crystal growth process described in the embodiment of the present application is implemented.

[0110] In some embodiments, the storage medium can be a magnetic random access memory (FRAM), a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), a flash memory, a magnetic surface storage, an optical disc, or a compact disc read-only memory (CD ROM); it can also be various devices including one or any combination of the above memories.

[0111] In some embodiments, executable instructions may be in the form of a program, software, software module, script, or code, written in any form of programming language (including compiled or interpreted languages, or declarative or procedural languages), and may be deployed in any form, including as a stand-alone program or as a module, component, subroutine, or other unit suitable for use in a computing environment.

[0112] As an example, executable instructions may, but do not necessarily, correspond to a file in a file system, may be stored as part of a file that stores other programs or data, for example, in one or more scripts in a HyperText Markup Language (HTML) document, in a single file dedicated to the program in question, or in multiple coordinated files (for example, files storing one or more modules, subroutines, or code portions).

[0113] By way of example, executable instructions may be deployed to be executed on one computing device, or on multiple computing devices at one site, or on multiple computing devices distributed across multiple sites and interconnected by a communication network.

[0114] The computer-readable storage medium has the following advantages:

[0115] (1) The embodiment of the present application uses a visual inspection device to accurately obtain the coordinates of the crystal and the center of the heat shield, calculate the relative deviation, and dynamically adjust the target liquid level distance to ensure that the relative position of the liquid level in each equal diameter process is stable and consistent. The stable liquid level position can create a highly stable crystal growth environment, effectively reducing crystal growth defects caused by liquid level fluctuations, such as dislocations and inclusions, making the internal structure of the crystal more uniform and dense, and the physical and chemical properties highly consistent, greatly improving the overall quality and performance of the crystal product, and meeting the stringent requirements of high-end application fields for crystal quality.

[0116] (2) The embodiment of the present application achieves standardized and intelligent liquid level position adjustment by setting a quantitative association rule between |Y2-Y4| and the crystal center offset. This dynamic adjustment mechanism can quickly respond to slight differences in liquid level position between different equal diameter processes, automatically adjust the current crystal center offset to an appropriate value, and ensure high consistency and repeatability of each batch of crystal growth process. It effectively reduces the risk of process instability caused by human operation errors or environmental fluctuations, improves production efficiency and product yield, and provides a solid guarantee for large-scale stable production.

[0117] (3) When detecting an unexpected silicon splash from the guide tube or heat shield, the embodiment of the present application can switch to the circle center coordinate relative positioning mode, using the geometric relationship between the crystal center and the heat shield center to accurately calculate the actual liquid level position, breaking through the interference limitation of silicon splash on visual detection, ensuring that the liquid level position information can still be accurately grasped in the event of equipment abnormalities, and maintaining the continuity of the crystal growth process. This effectively reduces production interruptions and crystal scrapping caused by unexpected failures, and significantly enhances the fault tolerance and risk resistance of the production process.

[0118] (4) The present embodiment establishes a multi-dimensional input parameter set, covering key parameters such as liquid nozzle distance, crystal diameter growth rate, thermal field temperature distribution, and liquid surface fluctuation frequency, to conduct in-depth analysis of the early growth of equal-diameter crystals, gaining early insights into potential problems and optimizing process parameters. Furthermore, a thermal field coordinate system conversion model is constructed to accurately map the change in the center coordinates of the heat shield to the compensation displacement of the crystal pulling mechanism, effectively compensating for the impact of the thermal field component position offset on the liquid surface position. The two work together to comprehensively improve the stability and controllability of the crystal growth process from the two dimensions of process optimization and equipment adaptation.

[0119] In the several embodiments provided in this application, it should be understood that the disclosed methods and electronic devices can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0120] The modules described as separate components may or may not be physically separate, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed across multiple network elements. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0121] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0122] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, platform server, or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a ROM, a RAM, a magnetic disk, or an optical disk.

[0123] The above are only specific embodiments of the present application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A method for determining a relative liquid level position during crystal growth, characterized in that: The method comprises: Obtaining the first crystal center coordinates (X1, Y1) and the first heat shield center coordinates (X2, Y2) during the first diameter equalization process through a visual inspection device, and calculating a first relative deviation Z1=Y2-Y1 based on the first heat shield center coordinates and the first crystal center coordinates; Obtain the second crystal center coordinates (X3, Y3) and the second heat shield center coordinates (X4, Y4) in the second diameter equalization process, and calculate the second relative deviation Z2 = Y4-Y3; The target liquid level distance is dynamically adjusted based on the coordinate difference between Y2 and Y4 so that the relative position of the liquid level in the current equal diameter process is consistent with that in the historical equal diameter process.

2. The method according to claim 1, characterized in that The dynamic adjustment includes: When |Y2-Y4|≤0.5mm, the current crystal center offset is controlled to Z1; When |Y2-Y4|>0.5mm, the current crystal center offset is controlled to be Z1+(Y2-Y4).

3. The method according to claim 1, characterized in that The method further comprises: Establish a multi-dimensional input parameter set; The growth of the early crystal of equal diameter is analyzed and processed based on the input parameter set; wherein the parameter set at least includes liquid mouth distance data, crystal diameter growth rate, thermal field temperature distribution map and real-time liquid level fluctuation frequency.

4. The method according to claim 1, wherein The method further comprises: When silicon splashing is detected on the guide tube or heat shield, the system switches to the circle center coordinate relative positioning mode and calculates the actual liquid level position based on the geometric relationship between the crystal center and the heat shield center.

5. The method according to claim 1, characterized in that The method further comprises: Compensate for the position offset of thermal field components as follows: A thermal field coordinate system conversion model is constructed to map the thermal screen center coordinate change ΔY=Y4-Y2 into the compensation displacement of the crystal pulling mechanism.

6. The method according to claim 1, characterized in that The visual detection device includes a dual-wavelength high-temperature imaging camera group, which includes an anti-pollution filter made of yttrium oxide. The sampling frequency of the dual-wavelength high-temperature imaging camera group is not less than 10 Hz.

7. The method according to claim 1, characterized in that The method further comprises: By maintaining the consistency of the relative position of the liquid surface in each equal diameter process, the longitudinal temperature gradient fluctuation of the crystal is controlled within a specific temperature gradient range.

8. A device for determining the relative liquid level position during crystal growth, characterized in that: The device comprises: a first detection module, configured to obtain, by a visual detection device, the first crystal center coordinates (X1, Y1) and the first heat shield center coordinates (X2, Y2) during the first diameter equalization process, and calculate a first relative deviation Z1=Y2-Y1 based on the first heat shield center coordinates and the first crystal center coordinates; The second detection module is used to obtain the second crystal center coordinates (X3, Y3) and the second heat shield center coordinates (X4, Y4) in the second diameter equalization process, and calculate the second relative deviation Z2 = Y4-Y3; The adjustment module is used to dynamically adjust the target liquid level distance based on the coordinate difference between Y2 and Y4, so that the relative position of the liquid level in the current equal diameter process remains consistent with that in the historical equal diameter process.

9. An electronic device, characterized in that: include: A processor, a storage medium, and a bus, wherein the storage medium stores machine-readable instructions executable by the processor. When the electronic device is running, the processor and the storage medium communicate via the bus, and the processor executes the machine-readable instructions to perform the method for determining the relative liquid level position during crystal growth as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method for determining the relative liquid surface position during crystal growth according to any one of claims 1 to 7 is executed.

Images