Power device carrier trap detection method based on dual-wavelength photoelectric combined Raman

Abstract

The invention relates to the technical field of electric power measurement, in particular to a power device carrier trap detection method based on dual-wavelength photoelectric combination Raman, which comprises the following steps: acquiring a transient current curve of a target power device converted from an off state to an on state, and repeatedly executing the conversion of the target power device from the off state to the on state at different temperatures to obtain a transient current curve of the target power device converted from the off state to the on state; obtaining first and second carrier trap information; performing directional activation on a single carrier trap in the target power device according to the first carrier trap information and the second carrier trap information, and performing high spatial resolution-oriented scanning on the activated single carrier trap by using a dual-wavelength Raman spectrum so as to measure the apparent carrier trap intensity of each carrier trap at each measurement position, and calculating the number of current carriers captured by the local current carrier traps according to the apparent current carrier trap intensity of each current carrier trap at each measurement position. Therefore, the problem that high-spatial-resolution measurement of the carrier trap is difficult to realize by an existing carrier trap measurement method and the like is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of electric power measurement, and in particular to a dual-wavelength photoelectric coupled Raman device and a method for detecting carrier traps in power devices thereof. Background Art

[0002] Power devices are core components of electrical and electronic equipment, widely used in consumer sectors such as power grids, high-speed rail, new energy vehicles, electronics manufacturing, and network communications, as well as defense sectors such as radar, energy weapons, and drones. Wide-bandgap semiconductor materials, such as GaN and SiC, offer new opportunities for the development of power devices due to their superior properties, including wide bandgap, high electron saturation velocity, and high breakdown field strength. These materials allow them to withstand higher peak voltages and higher frequencies, but they also present new challenges. As power devices increase in operating frequency and continue to operate in extreme environments with high power, high voltage, and high temperatures, they face a greater risk of failure.

[0003] The generation and proliferation of carrier traps are the core reasons for the performance degradation and shortened life of power devices. Carrier traps have the ability to capture carriers and are the main factor causing the increase of local resistance and thermal resistance. Carrier traps introduced by processes such as heterojunction surface contact and uneven material growth are widely distributed in areas such as the device barrier layer and buffer layer, resulting in various problems such as surface states and interface states, causing the device to experience phenomena such as threshold voltage drift and current collapse. In recent years, researchers have found that with the increase of operating current frequency and the extension of application time, carrier traps also show significant proliferation and accumulation characteristics. At the same time, they also induce a variety of new carrier traps of different types and locations that are different from the initial carrier traps, causing not only the degradation of the device's electrical performance, but also serious hot spot concentration and instantaneous breakdown problems, which directly threaten the service life of the device.

[0004] With the rapid increase in the performance requirements of power devices, there is an urgent need to reveal the location and mechanism of carrier trap formation. However, existing research still lacks methods for in-situ, real-time, and high spatial resolution detection of carrier traps. The main existing characterization methods for carrier traps are deep-level transient spectroscopy, transient current method, and low-frequency noise method. The core principle is to extract the intrinsic information of carrier traps from the micro-perturbations caused by the capture and release of carriers on the device output. Since the measurement object is the output physical quantity of the entire device, the above methods characterize the sum of the carrier traps in various parts of the device and lack face-to-face resolution. Device damage is often caused by local collapse: under the premise that the overall carrier trap problem of the device is not prominent, once the carrier traps at a certain point increase excessively, the breakdown voltage of the point is reduced, which will cause a serious burnout risk and directly threaten the life of the device. Secondly, different structures in the device have different multi-physical field environments, and the proliferation laws of carrier traps are also different. Developing methods that can detect carrier traps within devices with high spatial resolution is a prerequisite for device lifetime prediction and a necessary condition for device structural optimization. Furthermore, the varying characteristics of carrier traps, such as energy levels and capture cross-sectional areas, influence device performance through different mechanisms, leading to inconsistent induction mechanisms and growth patterns. Distinguishing the distribution of different carrier traps under the device's current operating conditions is a crucial factor in device performance analysis.

[0005] In summary, existing detection methods are not sufficient to accurately detect the distribution of various types of carrier traps within the device. Developing high-spatial-resolution carrier trap detection methods has become a difficult problem that needs to be urgently solved in the development of power devices. Summary of the Invention

[0006] The present invention provides a power device carrier trap detection method based on dual-wavelength photoelectric coupled Raman spectroscopy to solve the problem that existing carrier trap measurement methods are difficult to achieve high spatial resolution measurement of carrier traps.

[0007] The first embodiment of the present invention provides a dual-wavelength photoelectric Raman device, comprising: a multi-channel signal generator for controlling the target power device to switch from an off state to an on state; a displacement platform, wherein a temperature control cavity is provided on the displacement platform for placing the target power device and controlling the temperature of the target power device; an excitation laser, wherein the excitation laser is connected to the multi-channel signal generator through a second photoelectric modulator, and is used to generate continuous Lap excitation light and convert the Lap excitation light into an excitation pulse light; a detection laser, wherein the detection laser is connected to the second photoelectric modulator through a first photoelectric modulator, and is used to generate continuous Lap detection light and convert the Lap detection light into a detection pulse light; a combination reflector, wherein the combination reflector is connected to the first photoelectric modulator and the second photoelectric modulator respectively, and is used to convert the target power device from an off state to an on state; The excitation pulse light and the detection pulse light are reflected to obtain reflected light; a scanning galvanometer, which is connected to the combined reflector and is used to irradiate the reflected light onto the target power device; a cutoff filter, which is used to filter the reflected light and obtain filtered reflected light; a grating, which is connected to the cutoff filter and is used to split the filtered reflected light and obtain split reflected light; an image sensor, which is connected to the grating and is used to detect the Raman spectrum of the split reflected light; a Raman spectrum signal processing module, which is respectively connected to the image sensor and the multi-channel signal generator and is used to analyze and process the Raman spectrum to adjust the multi-channel signal generator to obtain a transient current curve and a variable temperature transient current curve.

[0008] The second aspect of the present invention provides a method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman, comprising the following steps: obtaining a transient current curve of a target power device switching from an off state to an on state, and analyzing the transient current curve to obtain first carrier trap information; repeatedly performing the switching of the target power device from an off state to an on state at different temperatures to obtain a temperature-dependent transient current curve, and analyzing the temperature-dependent transient current curve to obtain second carrier trap information; directionally activating a single carrier trap in the target power device according to the first carrier trap information and the second carrier trap information to obtain an activated single carrier trap; performing a high-spatial-resolution scanning of the activated single carrier trap using a dual-wavelength photoelectric coupled Raman device to measure the apparent carrier trap intensity of each carrier trap at each measurement position; and calculating the number of carriers captured by the local carrier trap according to the apparent carrier trap intensity of each carrier trap at each measurement position.

[0009] Optionally, acquiring a transient current curve of the target power device when it switches from an off state to an on state, and analyzing the transient current curve to obtain first carrier trap information includes:

[0010] Connecting a circuit loop of the target power device to determine off-state parameters and on-state test parameters; based on the off-state parameters and the on-state test parameters, collecting a transient current curve of the target power device transitioning from the off-state to the on-state; parsing the transient current curve based on Bayesian deconvolution to obtain the first carrier trap information, wherein the first carrier trap information is the type and time constant of the carrier trap under the current environment.

[0011] Optionally, repeatedly performing the conversion of the target power device from the off state to the on state at different temperatures to obtain a temperature-dependent transient current curve, and analyzing the temperature-dependent transient current curve to obtain second carrier trap information includes:

[0012] The target power device is repeatedly converted from an off state to an on state at different temperatures to obtain the variable temperature transient current curve; and the variable temperature transient current curve is analyzed based on Bayesian deconvolution to obtain the second carrier trap information, wherein the second carrier trap information is the energy level and capture cross-sectional area of each carrier trap.

[0013] Optionally, the use of a dual-wavelength photoelectric coupled Raman device to perform high spatial resolution scanning on the activated single carrier trap to measure the apparent carrier trap intensity of each carrier trap at each measurement position includes:

[0014] The dual-wavelength photoelectric Raman device is used to emit Raman excitation light and Raman detection light to the activated single carrier trap to determine the position carrier trap information; the current position of the target power device is changed multiple times according to the position carrier trap information, and the Raman excitation light and the Raman detection light are emitted to the target power device after each change to determine the apparent carrier trap intensity of each carrier trap at each measurement position.

[0015] Optionally, the step of emitting Raman excitation light and Raman detection light to the activated single carrier trap using the dual-wavelength photoelectric Raman device to determine position carrier trap information includes:

[0016] The dual-wavelength photoelectric coupled Raman device is used to emit the Raman excitation light to the activated single carrier trap to locally measure a first Raman spectrum measurement result; the dual-wavelength photoelectric coupled Raman device is used to emit the Raman detection light to the activated single carrier trap to locally measure a second Raman spectrum measurement result; and the first Raman spectrum measurement result and the second Raman spectrum measurement result are subtracted to obtain the position carrier trap information.

[0017] Optionally, calculating the number of carriers captured by the local carrier traps according to the apparent carrier trap intensity of each carrier trap at each measurement position includes:

[0018] The target power device is detected based on the transient current method to obtain the total number of carriers captured by carrier traps hidden in the fluctuation section; the total number of carriers captured by the carrier traps is distributed according to the apparent carrier trap intensity of each carrier trap at each measurement position to obtain the number of carriers captured by local carrier traps.

[0019] An embodiment of the third aspect of the present invention provides an electronic device, comprising: a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor executes the program to implement the power device carrier trap detection method based on dual-wavelength photoelectric coupled Raman as described in the above embodiment.

[0020] A fourth aspect of the present invention provides a computer program product. When the computer program / instructions are executed by a processor, the computer program / instructions implement the above-mentioned method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy.

[0021] A fifth aspect of the present invention provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the above-mentioned method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy.

[0022] According to the dual-wavelength photoelectric coupled Raman method for detecting carrier traps in power devices proposed in an embodiment of the present invention, Raman spectroscopy detection technology is applied to the measurement of the intensity and distribution of carrier traps in power devices. Based on the principle that carrier traps capture carriers and cause local electric field alienation, a high-spatial-resolution method and means for measuring the intensity and distribution of carrier traps are proposed. Furthermore, two laser beams with different energies are selected, wherein the high-energy laser can cause all electrons in the carrier trap to escape, while the low-energy laser cannot excite electrons in the carrier trap. Based on the above-mentioned differences caused by the dual-wavelength laser, the apparent intensity of the local carrier trap can be determined by the difference in the returned spectrum; further, based on the differences in the time constants of different carrier traps obtained by transient current analysis, the pulse voltage width applied to the sample is changed by electrical modulation, so as to achieve directional activation of single carrier traps, and then through optical modulation, the measurement synchronization is achieved, thereby realizing high spatial resolution detection of single carrier traps; further, by integrating the transient current curve, the total amount of single carrier traps in the device can be quantitatively obtained, and proportionally distributed according to the dual-wavelength Raman scanning results of the entire field, thereby realizing high spatial resolution quantitative determination of single carrier traps in the device.

[0023] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0025] Figure 1 A schematic structural diagram of a dual-wavelength photoelectric Raman device provided in an embodiment of the present invention;

[0026] Figure 2 A flow chart of a method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy provided by an embodiment of the present invention;

[0027] Figure 3 A calculation modeling diagram of a HEMT device provided in an embodiment of the present invention;

[0028] Figure 4 A potential distribution diagram of a device without carrier traps obtained by simulation calculation according to an embodiment of the present invention;

[0029] Figure 5 A potential distribution diagram obtained by simulation calculation when a device has carrier traps provided by an embodiment of the present invention;

[0030] Figure 6A schematic diagram of a dual-wavelength detection of a single-point carrier trap provided by an embodiment of the present invention;

[0031] Figure 7 A transient current analysis and Bayesian deconvolution analysis result diagram provided by an embodiment of the present invention;

[0032] Figure 8 A schematic diagram of a dual-wavelength photoelectric modulation method for detecting a single-point carrier trap provided by an embodiment of the present invention;

[0033] Figure 9 A carrier trap spatial distribution calculation logic diagram provided by an embodiment of the present invention;

[0034] Figure 10 The present invention provides a schematic structural diagram of an electronic device.

[0035] Description of reference numerals:

[0036] 000-Target power device, 100-Circuit drive and control system, 101-Multi-channel signal generator, 102-First photoelectric modulator, 103-Second photoelectric modulator, 201-Combined reflector, 202-Scanning galvanometer, 203-Cut-off filter, 204-Detection laser, 205-Excitation laser, 206-Grating, 207-Image sensor, 208-Raman spectroscopy signal processing module, 300-Computer, 400-Displacement platform, 401-Temperature control cavity. DETAILED DESCRIPTION

[0037] The following describes embodiments of the present invention in detail, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and are not to be construed as limiting the present invention.

[0038] The following describes a method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman according to an embodiment of the present invention with reference to the accompanying drawings. In view of the limitation that existing detection methods for carrier traps in devices mentioned in the background technology center above cannot achieve high spatial resolution, including deep level spectroscopy, capacitance method, and noise method, all of which infer carrier trap information by capturing or releasing carriers, causing fluctuations in the overall output signal of the device, and also obtain the intensity of the overall carrier traps in the device, which lacks spatial resolution. The present invention provides a method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman. In this method, the feature of high spatial resolution measurement can be achieved based on Raman spectroscopy, and it can be applied to the measurement of carrier trap intensity and distribution in semiconductor devices.

[0039] It should be noted that Raman spectroscopy is a non-contact, high-spatial-resolution optical measurement method. Based on directional scanning, confocal technology can be used to measure the normal direction of semiconductor devices, thereby enabling three-dimensional analysis of the devices. By measuring the peak shift of the Raman characteristic peak of the sample under a certain stress, the magnitude of the applied stress can be determined. Based on accurate stress shift coefficients, including temperature, mechanical stress, and electric field, the shift of the Raman peak can be used to measure multiple physical fields. Furthermore, because different materials have different characteristic peaks, Raman spectroscopy can also achieve simultaneous measurement of multi-layer materials.

[0040] Specifically, Figure 1 This is a schematic structural diagram of a dual-wavelength photoelectric coupled Raman device provided by an embodiment of the present invention.

[0041] like Figure 1 As shown, the dual-wavelength optoelectronic Raman device includes: a multi-channel signal generator 101, a displacement platform 400, an excitation laser 202, a detection laser 201, a combined reflector 201, a scanning galvanometer 202, a cutoff filter 203, a grating 206, an image sensor 207 and a Raman spectrum signal processing module 208.

[0042] The multi-channel signal generator 101 is used to control the target power device 000 from the off state to the on state according to the circuit drive and control system 100. A temperature control chamber 401 is provided on the displacement platform 400 for placing the target power device and controlling the temperature of the target power device 000. The excitation laser 205 is connected to the multi-channel signal generator 101 via the second photoelectric modulator 103 and is used to generate continuous Lap excitation light and convert the Lap excitation light into excitation pulse light. The detection laser 204 is connected to the second photoelectric modulator 103 via the first photoelectric modulator 102 and is used to generate continuous Lap detection light and convert the Lap detection light into detection pulse light. The combined reflector 201 is connected to the first photoelectric modulator 102 and the second photoelectric modulator 103, respectively, and is used to reflect the excitation pulse light and the detection pulse light to produce reflected light. The scanning galvanometer 202 is connected to the combined reflector 201 and is used to illuminate the reflected light onto the target power device 000. The cutoff filter 203 is used to filter the reflected light to produce filtered reflected light. Grating 206 is connected to cutoff filter 203 and is used to split the filtered reflected light to obtain the split reflected light. Image sensor 207 is connected to grating 206 and is used to detect the Raman spectrum of the split reflected light. Raman spectrum signal processing module 208 is disposed within computer 300 and is connected to image sensor 207 and multi-channel signal generator 101, respectively. It is used to analyze and process the Raman spectrum and transmit the analysis results to circuit drive and control system 100 to adjust the multi-channel signal generator to obtain transient current curves and temperature-dependent transient current curves.

[0043] Specifically, the circuit drive and control system 100 is housed within a computer 300 and includes an instrument control unit and a data acquisition unit. The instrument control unit is used to set the parameters of each instrument within the entire circuit and control their on / off states. The data acquisition unit controls data acquisition using Labview programming. A multi-channel signal generator 101 is used to generate electrical stress applied to the target power device 000, while controlling its on / off transitions. It is also used to adjust the parameters of the electro-optical modulator to produce optical pulses with the same width and starting time as the applied electrical pulses. The excitation laser 205 is used to generate continuous ultraviolet laser light. The detection laser 204 is used to generate continuous detection laser light. The excitation laser 205 and the detection laser 204 illuminate the target power device 000 through multiple reflectors 201, a scanning galvanometer 202, and a lens 203 to stimulate the Raman spectrum at the irradiated location of the target power device 000. The irradiation locations of the Lapkin excitation and detection beams are adjusted using the scanning galvanometer 202, a temperature-controlled chamber 401, and a displacement platform 400. The cutoff filter 203 is used to filter the reflected light of the target power device 000. The grating 206 is used to split the filtered reflected light. The image sensor 207 is used to detect the Raman spectrum of the split reflected light, wherein the image sensor 207 can be a charge coupled device (CCD), a complementary metal oxide semiconductor (CMOS), etc., without limitation. The Raman spectrum signal processing module 208 includes a Bayesian deconvolution analysis program and a transient current curve fitting program, wherein the Bayesian deconvolution analysis program is used to analyze the transient current curve to obtain the time constant and intensity of the carrier trap, and the transient current curve fitting program is used to fit the transient current curve to obtain the total number of carriers captured by the carrier trap in the corresponding time period, that is, to analyze, process and visualize the received Raman spectrum. By varying the measurement position, the displacement platform 100 measures the changes in the dual-wavelength Raman peaks at different locations of the target power device 000, thereby obtaining the distribution of carrier traps at different locations of the target power device 000. The temperature-controlled chamber 401 measures the changes in the transient current curve of the target power device 000 at different temperatures by varying the measurement temperature of the target power device 000, thereby obtaining the behavior of carrier traps at different temperatures.

[0044] Furthermore, the device may also include a NI data acquisition system, which is used to acquire transient current data with high time resolution to analyze carrier trapping behavior.

[0045] In summary, the dual-wavelength photoelectric combined Raman device proposed in an embodiment of the present invention is a device with high spatial resolution dual-wavelength photoelectric combined measurement of the position and intensity of carrier traps in power devices. The interference caused by carrier traps on the device current is obtained through transient current analysis, the time constant and overall intensity of the carrier trap are obtained through Bayesian convolution, the energy level and capture cross-sectional area of the carrier trap are obtained through variable temperature analysis, the local apparent intensity measurement of the carrier trap is obtained through dual-wavelength laser, the spot position is controlled by a displacement platform to achieve high spatial resolution distribution measurement, and the directional activation and detection of a single carrier trap are achieved through electro-optical modulation. Through this device, non-contact, high spatial resolution, in-situ measurement of a single type of carrier trap in a target power device can be achieved.

[0046] Next, a method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy (DC-Raman) according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0047] Figure 2 The present invention provides a flow chart of a method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy.

[0048] like Figure 2 As shown, the power device carrier trap detection method based on dual-wavelength photoelectric coupled Raman spectroscopy includes the following steps:

[0049] In step S201 , a transient current curve of a target power device switching from an off state to an on state is obtained, and the transient current curve is analyzed to obtain first carrier trap information.

[0050] In some embodiments, obtaining a transient current curve of a target power device when it switches from an off state to an on state and analyzing the transient current curve to obtain first carrier trap information includes:

[0051] Connect the circuit loop of the target power device to determine the off-state parameters and on-state test parameters;

[0052] Based on the off-state parameters and on-state test parameters, the transient current curve of the target power device when it switches from the off-state to the on-state is collected;

[0053] Based on Bayesian deconvolution, the transient current curve is analyzed to obtain first carrier trap information, wherein the first carrier trap information is the type and time constant of the carrier trap under the current environment.

[0054] In the actual implementation process, since carrier traps are affected by the electric field, it is necessary to stimulate the carrier traps to capture or release carriers by changing the electric field of the device, so as to obtain carrier trap information from the device operating current fluctuations and first select the target power device.

[0055] Specifically, the embodiment of the present invention places the target power device in the displacement platform of the dual-wavelength photoelectric Raman device, connects the electrodes, completes the on-off control of the circuit loop, determines the off-state parameters and the on-state test parameters, and specifically applies the off-gate source voltage V to the target power device. gs_off Less than the threshold voltage V th The gate voltage is set to V, which means that the target power device is in the off state and the gate-source voltage is set to V gs_on Slightly larger than the threshold voltage V th , while the drain-source voltage V ds_on Set to a low voltage that does not cause temperature rise.

[0056] Furthermore, because different carrier traps within the target power device capture carriers at different initial moments and speeds, with heterojunction interface carrier traps typically beginning to capture carriers several microseconds after the device transitions to the on state, an acquisition card with a data acquisition rate of at least 1E+6 points / second is required. Therefore, embodiments of the present invention further employ a high-resolution data acquisition card connected to a standard resistor in the circuit loop. The voltage across the standard resistor is measured to characterize the current in the loop, and the device current is continuously measured until it stabilizes, thereby obtaining a transient current curve for the device's transition from the off state to the on state.

[0057] It is understandable that the fluctuations in the device's transient current curve are caused by the capture or release of carriers by internal carrier traps, and fluctuations in different time periods reveal the existence of different carrier traps.

[0058] Therefore, the embodiment of the present invention uses the Bayesian deconvolution program to analyze and obtain the activation period of different carrier traps, which is expressed as a peak on the time coordinate axis. The peak position is selected as the time constant τ of the carrier trap. i , and then the apparent intensity A of different carrier traps is obtained by fitting formula i , that is, the type of carrier trap and time constant in the current environment.

[0059] In step S202 , the target power device is repeatedly switched from an off state to an on state at different temperatures to obtain a temperature-dependent transient current curve, and the temperature-dependent transient current curve is analyzed to obtain second carrier trap information.

[0060] In some embodiments, the target power device is repeatedly switched from an off state to an on state at different temperatures to obtain a temperature-dependent transient current curve, and the temperature-dependent transient current curve is analyzed to obtain the second carrier trap information, including:

[0061] Repeatedly perform the conversion of the target power device from the off state to the on state at different temperatures to obtain a temperature-dependent transient current curve;

[0062] Based on Bayesian deconvolution, the temperature-dependent transient current curve is analyzed to obtain the second carrier trap information, wherein the second carrier trap information is the energy level and capture cross-sectional area of each carrier trap.

[0063] In practice, because carriers captured by carrier traps of different energy levels vary in their sensitivity to temperature, the energy levels of the carrier traps can be inferred by measuring the fluctuations in the operating current over varying temperatures. Therefore, the present embodiment performs measurements over a temperature range of 5-10K, observing the evolution of fluctuations in the current curve over various time periods. This ensures that at least four temperature conditions are measured. The Bayesian unwrapping analysis then compares the carrier trap information in the transient current curves at different temperatures, and uses the Arrhenius formula to determine the energy level and capture cross-sectional area of each carrier trap.

[0064] In step S203 , a single carrier trap in the target power device is directionally activated according to the first carrier trap information and the second carrier trap information to obtain an activated single carrier trap.

[0065] In actual implementation, as demonstrated in steps S201 and S202, different carrier traps within the target power device have different active periods. When the applied electric field disappears, each carrier trap releases the trapped carriers. Therefore, applying a pulsed voltage allows for repeated filling and emptying of the device's carrier traps. Therefore, by modulating the width of the pulsed voltage, it is possible to achieve single, gradual activation of carrier traps with varying time constants, from short to long.

[0066] Specifically, embodiments of the present invention distinguish active time periods of different carrier traps based on the carrier trap type and time constant of the first carrier trap information. It should be noted that since different carrier traps may have coupled active time periods, the time constant and intensity of the carrier traps can be changed by varying the ambient temperature until different active time periods are distinguished.

[0067] Furthermore, by changing the width of the excitation electric pulse, the carrier traps with smaller and larger time constants are activated in sequence. For example, there is a time constant of τ in the device. a The carrier trap and time constant is τ b carrier trap, and τ a <τ b , and there are two clearly distinguishable fluctuation segments in the transient current curve. The current smoothing stage between the two fluctuation segments is recorded as t0, at which time no carrier traps capture or release carriers; specifically, the time constant is τ a The starting time when the carrier trap captures or releases the carrier is recorded as t a1 The time when the filling or emptying is t a2; Similarly, the time constant is τ b The starting time when the carrier trap captures or releases the carrier is recorded as t b1 , the time when the filling is full or the empty space is released is t b2 ; Therefore, the excitation time constant is τ a The electric pulse of the carrier trap should start earlier than t a1 , the end time should be greater than t a2 , and is less than t0; there is enough time between the two pulses for the carrier trap to recover to its initial state; the excitation time constant is τ b The electric pulse of the carrier trap should start earlier than t a1 , the end time should be greater than t b2 ; At this time, both carrier traps are activated, and the time constant is τ a The carrier trap information of is known, and the time constant can be obtained by difference as τ b The carrier trap information of the current source can be obtained; and so on, various carrier traps can be analyzed.

[0068] In step S204 , a dual-wavelength photoelectric coupled Raman device is used to perform high spatial resolution scanning on the activated single carrier traps to measure the apparent carrier trap intensity of each carrier trap at each measurement position.

[0069] In some embodiments, a dual-wavelength photoelectric coupled Raman device is used to perform high spatial resolution scanning on the activated single carrier trap to measure the apparent carrier trap intensity of each carrier trap at each measurement position, including:

[0070] A dual-wavelength photoelectric Raman device is used to emit Raman excitation light and Raman detection light to the activated single carrier trap to determine the position of the carrier trap information;

[0071] The current position of the target power device is changed multiple times according to the position carrier trap information, and Raman excitation light and Raman detection light are emitted to the target power device after each change to measure the apparent carrier trap intensity of each carrier trap at each measurement position.

[0072] In some embodiments, a dual-wavelength photoelectric coupled Raman device is used to emit Raman excitation light and Raman detection light to an activated single carrier trap to determine position carrier trap information, including:

[0073] A dual-wavelength photoelectric Raman device is used to emit Raman excitation light to the activated single carrier trap to locally measure the first Raman spectrum measurement result;

[0074] A dual-wavelength photoelectric Raman device is used to emit Raman probe light to the activated single carrier trap to locally measure the second Raman spectrum measurement result;

[0075] The first Raman spectrum measurement result is subtracted from the second Raman spectrum measurement result to obtain position carrier trap information.

[0076] In actual implementation, when the laser energy is greater than the semiconductor bandgap, all carriers trapped in the carrier trap will be excited and escape, leaving the carrier trap empty and the local electric field unaffected by the carrier trap. However, when the laser energy is insufficient to excite the carriers trapped in the carrier trap, the carrier trap becomes full, and the local electric field is affected by the carrier trap. Therefore, the information difference returned by the dual-wavelength Raman spectrum simply characterizes the difference between the empty and full states of the local carrier trap, i.e., the apparent intensity of the local carrier trap. Therefore, in this embodiment of the present invention, ultraviolet light is selected as the Raman excitation light, and another longer wavelength light is selected as the Raman detection light. Through electro-optical modulation, the measurement time of the Raman excitation light and the Raman detection light coincides with the starting time of the electrical pulse in step S203, and the width is consistent.

[0077] Furthermore, the wavelengths and energies of the dual lasers need to be determined based on the excitation of the trapped electrons in the carrier trap. The Raman excitation light should excite all the trapped carriers in the carrier trap, while the Raman detection light should not affect the trapped carriers in the carrier trap. Therefore, in the embodiment of the present invention, Raman excitation light is used for measurement first, and then Raman detection light is used for detection.

[0078] It can be understood that since the energy of the excitation light is higher than the band gap width of the semiconductor, all trapped electrons in the conduction band and the valence band can be excited. At this time, the Raman spectrum reflects the local multi-physical field coupling information; when the Raman detection light is irradiated, the electrons in the carrier trap do not obtain sufficient excitation energy and still remain in the carrier trap, causing the measured signal to contain not only local multi-physical field information but also superimposed with the electric field changes caused by the carrier trap electrons. Therefore, the embodiment of the present invention subtracts the first Raman spectrum measurement result measured by the Raman excitation light and the second Raman spectrum measurement result measured by the Raman detection light to obtain the position carrier trap information.

[0079] Furthermore, by changing the measurement position of the target power device through the displacement platform and repeating the aforementioned steps of emitting dual-wavelength Raman spectroscopy, high spatial resolution detection of each carrier trap can be achieved, and the apparent intensity of each carrier trap at each measurement position can be obtained.

[0080] In step S205 , the number of carriers captured by the local carrier traps is calculated according to the apparent carrier trap intensity of each carrier trap at each measurement position.

[0081] In some embodiments, calculating the number of carriers captured by local carrier traps based on the apparent carrier trap intensity of each carrier trap at each measurement position includes:

[0082] The target power device is tested based on the transient current method to obtain the total number of carriers captured by carrier traps hidden in the fluctuation section;

[0083] The total number of carriers captured by the carrier traps is distributed according to the apparent carrier trap intensity of each carrier trap at each measurement position to obtain the number of carriers captured by the local carrier traps.

[0084] During the actual implementation process, steps S101 to S104 achieve directional activation and directional detection of a single carrier trap. However, the difference between the two-wavelength Raman spectra only obtains the apparent carrier trap intensity, and it is not possible to know the specific number of carriers captured by the local carrier trap. The transient current method is a macroscopic detection of the device, and the fluctuation range hides the total carrier capture information of the device's carrier trap. By distributing the total number of captured carriers according to the numerical ratio of the Raman full-field scan results, the number of carriers captured by the local carrier trap can be obtained.

[0085] In some embodiments, the method further includes setting the temperature-controlled chamber to different temperatures so that electrical stress is applied to the target power device under different temperature conditions, and obtaining characteristic changes of carrier traps at different temperatures through a dual-wavelength electro-optical Raman measurement method and device.

[0086] It is understandable that the total amount and speed of carriers captured by carrier traps are directly related to the temperature conditions of the target power device. Different temperatures will cause the carrier traps to exhibit different abilities to capture carriers, thus causing different degrees of electric field alienation.

[0087] Specifically, the target power device is placed in a constant temperature environment at a temperature of T, and steps S201 to S205 are repeated to obtain changes in carrier trap intensity and distribution under different temperature conditions.

[0088] The power device carrier trap detection method based on dual-wavelength photoelectric coupled Raman spectroscopy proposed in the embodiment of the present invention is further described below through a specific embodiment.

[0089] The power device GaN-based HEMT is used as the sample, model CGH60008D. Figure 3A 2D single-transistor model of the same size, built using a device side-on cutaway image, is shown. The model includes an Au alloy electrode and field plate, a Si3N4 insulating layer (0.6μm thick), an AlGaN barrier layer (25nm thick), a GaN buffer layer (1.5μm thick), and a SiC substrate layer (100μm thick). The drain width is set to 16μm, the source width is 36μm, and the channel width is 8μm.

[0090] The method for measuring carrier traps in an embodiment of the present invention is based on the characteristic that carrier traps capture carriers and cause local electric field anomaly, which will now be explained in detail using a calculation model established based on this embodiment. Figure 4 The carrier trap-free device model established based on this embodiment is shown, where V ds =20V, V gs =-5V. Due to the set V gs Before the threshold voltage is reached, the device is in the off state. It can be seen that under the action of the electric field and the polarization effect of the semiconductor material of the device, there is an electric field perpendicular to the device surface and pointing downward.

[0091] Figure 5 The potential distribution of different concentrations of carrier traps at different locations is shown. It can be seen that when the concentration of carrier traps on the surface or heterojunction gradually increases, the captured carriers cause the local potential to decrease, generating a reverse electric field in the opposite direction to the electric field in the absence of carrier traps, which points from the inside of the device to the location where the carrier traps exist. Since semiconductor materials are polarized materials, changes in the electric field will inevitably cause changes in the atomic vibration mode, causing the peak position of the Raman peak to shift. In this embodiment, the built-in electric field generated by the spontaneous polarization of the GaN material is in the same direction as the external electric field in the absence of carrier traps, which compresses the unit cell and causes the characteristic peak of the measured Raman spectrum to shift to the right. When the carrier trap weakens or even reverses the local electric field, the measured Raman peak will shift to the left relative to the peak position when there are no carrier traps. Based on the electric field alienation phenomenon at the local detection point, the apparent intensity of the carrier trap can be inferred.

[0092] Figures 3 to 5 The principle of carrier trapping and carrier shift is demonstrated. However, under actual working conditions, temperature rise and thermal stress inside the chip will also cause the Raman peak to shift. Therefore, the embodiment of the present invention adopts a dual-wavelength detection method to separate the carrier trap effect from the influence of other multi-physical fields on the Raman peak, and the principle diagram is shown in the figure according to one embodiment of the present invention. Figure 5 In. Figure 6As shown, two beams of light with different wavelengths and intensities are used to sequentially detect Raman signals at the same location. Because the trapped carriers' energy levels lie between the conduction and valence bands of the power device's semiconductor material, they can be excited by excitation sources with energies greater than the bandgap. Therefore, a shorter-wavelength, higher-energy beam is selected as the excitation light to clear the trapped carriers from the trap. The reflected Raman spectrum then contains only information about multiple physical fields, such as temperature rise and thermal stress. A longer-wavelength, lower-energy beam is selected as the probe light. Because the trapped carriers in the trap are unable to escape due to insufficient excitation energy, the reflected Raman spectrum not only contains information about multiple physical fields, such as temperature rise and thermal stress, but also includes information about the carrier trap. By subtracting the Raman spectra obtained from the two wavelengths at the same location, the Raman peak shift caused by the local electric field anomaly is determined, representing the apparent intensity of the local carrier trap.

[0093] Under actual working conditions, there may be multiple carrier traps of different energy levels at the same position in the device. It is very necessary to distinguish the impact of different carrier traps on the device. The embodiment of the present invention first determines the type of carrier traps in the device through transient current analysis and Bayesian deconvolution analysis, and based on this, the device is subjected to electrical pulse width modulation to achieve directional activation of a single carrier trap. Specifically, Figure 7 Figure 2 shows the transient current analysis and Bayesian unwinding results for an embodiment of the present invention. It can be seen that the device's on-state current exhibits significant fluctuations, with a period of initial decrease followed by an increase, followed by two subsequent decreases at different rates. Based on the carrier capture pattern of the carrier traps, the device's on-state current can be written as:

[0094]

[0095] Where A(τ) is the apparent intensity of the carrier trap with a time constant of τ. Based on the above equation, we first analyze the transient current curve.

[0096] z=lnt.(2)

[0097] Also define

[0098]

[0099] Where △I(z) is the apparent intensity of the carrier trap at time z. Then formula (1) can be changed to:

[0100]

[0101] Substituting formula (2) into formula (4) yields:

[0102]

[0103] Taking the derivative of both sides of formula (5) with respect to z, we get:

[0104]

[0105] Define a factor as:

[0106] W(z)=exp(z-exp(z)) (7)

[0107] Then formula (6) can be changed to:

[0108]

[0109] It can be seen that formula (8) is a form of convolution, and the intensity I(z) can be analyzed by deconvolution:

[0110]

[0111] Theoretically, the method for extracting the time constant spectrum ΔI(z) can be solved using any deconvolution method. However, the effects of measurement uncertainty and noise in actual measurements are amplified during the deconvolution process, increasing the uncertainty of the deconvolution result. Therefore, a deconvolution method with noise filtering capabilities is generally used for analysis. In this case, the Bayesian deconvolution method is selected.

[0112] By analyzing the transient current curve using the above method, we obtain the multi-peak result shown in the lower half of the right figure. Multiple peaks indicate the presence of multiple carrier traps. Taking the peak position of each peak as the time constant of each carrier trap, we fit the following equation (10) to obtain the apparent intensity of each carrier trap.

[0113]

[0114] By using the transient current method to track the current fluctuation curve at the moment the device is turned on, and decoupling the time constants of each carrier trap state through Bayesian deconvolution, the active periods of different carrier traps capturing carriers are confirmed. By applying a fixed-width electric pulse to the target power device, only a single trap is directionally activated under the pulse to capture carriers, thereby achieving directional separation between multiple carrier traps. On this basis, by accurately synchronizing the dual-wavelength detection light signal with the electrical signal, including consistent period and width, directional measurement of a single trap can be achieved. Figure 8As shown, the power device of the embodiment has two different trap states, with time constants of τ1 and τ2, respectively. If the cutoff time of the device's driving electrical pulse is less than the start time of carrier capture in trap state 2, then only trap state 1 captures carriers, and the Raman peak shift obtained by subtracting the dual-wavelength Raman detection light is caused solely by trap state 1. When the width of the device's driving electrical pulse is greater than the active period of trap state 2, the Raman peak shift obtained by subtracting the dual-wavelength Raman detection light is caused by both trap states 1 and 2. By subtracting the obtained Raman peak shift caused by trap state 1, the peak shift caused by trap state 2 can be separately analyzed, thereby inferring the intensity of trap state 2 under the applied working conditions.

[0115] like Figure 9 As shown, the result obtained by Raman detection is the apparent intensity, not the actual intensity of the local defect, and cannot characterize the number of locally captured carriers. Therefore, it is necessary to know the total number of carriers captured by the carrier trap in the device, and then determine the number of carriers captured by the local carrier trap by allocating the numerical proportion of the full-field detection results by Raman. The transient current method measures the current curve and extracts the interlayer distribution information of the carrier trap, including parameters such as time constant, energy level and capture cross section. The carrier trap information extracted from the transient current method is input into the TCAD simulation, and the simulation tool is used to analyze the integrated concentration of the carrier traps in the device. The current results under different carrier concentrations are compared and fitted with the transient current method to obtain the integrated concentration of traps in the device. The in-plane distribution of the carrier traps is obtained by Raman spectroscopy, and the spatial distribution of the Raman peak position is obtained. Combining the above two methods, the quantitative in-plane spatial distribution of the traps is achieved.

[0116] It should be noted that the above explanation of the embodiment based on the dual-wavelength photoelectric coupled Raman device is also applicable to the power device carrier trap detection method based on the dual-wavelength photoelectric coupled Raman of this embodiment, and will not be repeated here.

[0117] According to the power device carrier trap detection method based on dual-wavelength photoelectric combined Raman proposed in an embodiment of the present invention, the dual-wavelength photoelectric combined measurement method for measuring the position and intensity of carrier traps in power devices with high spatial resolution is characterized by the difference in Raman peaks of the excitation light and the detection light. The high energy of the excitation light allows the carriers trapped in the carrier trap to escape, and the obtained Raman signal only contains the multi-physical field information such as the local temperature and stress under the applied working condition. The energy of the detection light is not enough to allow the carriers trapped in the carrier trap to escape. In addition to the multi-physical field information such as the local temperature and stress under the applied working condition, the obtained Raman signal also includes the electric field changes caused by the trapped carriers. By taking the difference between the Raman signals obtained from the two laser beams, the measurement condition can be obtained. The information of carrier traps can be obtained by changing the measurement position of the light spot to achieve high spatial resolution scanning of the entire field; on this basis, the behavior of macroscopic carrier traps can be obtained by transient current analysis of the device, and various carrier traps and their active periods can be distinguished. By optically modulating the dual-wavelength laser and electrically modulating the device, the width of the driving electric pulse can be controlled, and different types of carrier traps can be activated in segments, thereby achieving full-field high-resolution measurement of different carrier traps; the total number of captured carriers is obtained by fitting the transient current curve, and the quantitative intensity characterization of local carrier traps is achieved according to the numerical proportion of the full-field measurement results of the dual-wavelength Raman. Ultimately, non-contact, high-spatial-resolution, accurate measurement of carrier traps in power devices is achieved, and it is expected to be expanded to other fields.

[0118] Figure 10 This is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. The electronic device may include:

[0119] A memory 1001 , a processor 1002 , and a computer program stored in the memory 1001 and executable on the processor 1002 .

[0120] When the processor 1002 executes the program, the power device carrier trap detection method based on dual-wavelength photoelectric coupled Raman spectroscopy provided in the above embodiment is implemented.

[0121] Furthermore, the electronic device further includes:

[0122] The communication interface 1003 is used for communication between the memory 1001 and the processor 1002 .

[0123] The memory 1001 is used to store computer programs that can be run on the processor 1002 .

[0124] The memory 1001 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0125] If the memory 1001, processor 1002, and communication interface 1003 are implemented independently, the communication interface 1003, memory 1001, and processor 1002 can be connected to each other via a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 10 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0126] Optionally, in a specific implementation, if the memory 1001, the processor 1002 and the communication interface 1003 are integrated on a chip, the memory 1001, the processor 1002 and the communication interface 1003 can communicate with each other through an internal interface.

[0127] The processor 1002 may be a central processing unit (CPU), an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention.

[0128] An embodiment of the present invention further provides a computer program product. When the computer program / instructions are executed by a processor, the computer program / instructions implement the above-mentioned method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy.

[0129] An embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon. When the program is executed by a processor, the method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy is implemented.

[0130] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or N embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0131] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "N" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0132] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code comprising one or N executable instructions for implementing a custom logical function or step of a process, and the scope of the preferred embodiments of the present invention includes alternative implementations in which functions may be performed out of the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present invention pertain.

[0133] The logic and / or steps represented in the flowcharts or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing the logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (e.g., a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device). For purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include the following: an electrical connection with one or N wires (electronic devices), a portable computer disk cartridge (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and a portable compact disc read-only memory (CDROM). In addition, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program can be obtained electronically by optically scanning the paper or other medium and then editing, interpreting or processing it in other suitable ways as necessary, and then storing it in a computer memory.

[0134] It should be understood that various parts of the present invention can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiment, the N steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented using hardware, as in another embodiment, any one of the following technologies known in the art or a combination thereof can be used: a discrete logic circuit having logic gate circuits for implementing logic functions on data signals, an application-specific integrated circuit having suitable combinational logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0135] Those skilled in the art will understand that all or part of the steps in the method of the above embodiment can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiment.

[0136] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing module, or each unit may exist physically separately, or two or more units may be integrated into a single module. The aforementioned integrated modules may be implemented in the form of hardware or in the form of software functional modules. If the integrated modules are implemented in the form of software functional modules and sold or used as independent products, they may also be stored in a computer-readable storage medium.

[0137] The storage medium mentioned above may be a read-only memory, a magnetic disk, or an optical disk, etc. Although the embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and are not to be construed as limiting the present invention. Persons skilled in the art may make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A dual-wavelength photoelectric Raman device, characterized in that: include: A multi-channel signal generator used to control the target power device to switch from the off state to the on state; A displacement platform, wherein a temperature control cavity is provided on the displacement platform for placing the target power device and controlling the temperature of the target power device; an excitation laser, connected to the multi-channel signal generator via a second photoelectric modulator, for generating continuous Lap excitation light and converting the Lap excitation light into excitation pulse light; a detection laser, the detection laser being connected to the second photoelectric modulator via the first photoelectric modulator, for generating continuous Lapp detection light and converting the Lapp detection light into detection pulse light; a combined reflecting mirror, the combined reflecting mirror being connected to the first photoelectric modulator and the second photoelectric modulator respectively, and being used to reflect the excitation pulse light and the detection pulse light to obtain reflected light; a scanning galvanometer, the scanning galvanometer being connected to the combined reflector and configured to irradiate the reflected light onto the target power device; a cutoff filter, used for filtering the reflected light to obtain filtered reflected light; a grating connected to the cutoff filter and configured to split the filtered reflected light to obtain split reflected light; an image sensor connected to the grating and configured to detect the Raman spectrum of the reflected light after the splitting; A Raman spectrum signal processing module is connected to the image sensor and the multi-channel signal generator respectively, and is used to analyze and process the Raman spectrum to adjust the multi-channel signal generator to obtain a transient current curve and a temperature-varying transient current curve.

2. A method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy, characterized in that: The dual-wavelength photoelectric coupled Raman device described in claim 1 comprises the following steps: Obtaining a transient current curve of a target power device when it switches from an off state to an on state, and analyzing the transient current curve to obtain first carrier trap information; Repeating the conversion of the target power device from an off state to an on state at different temperatures to obtain a temperature-dependent transient current curve, and analyzing the temperature-dependent transient current curve to obtain second carrier trap information; Directedly activating a single carrier trap in the target power device according to the first carrier trap information and the second carrier trap information to obtain an activated single carrier trap; Using a dual-wavelength photoelectric coupled Raman device to perform high spatial resolution scanning on the activated single carrier trap to measure the apparent carrier trap intensity of each carrier trap at each measurement position; The number of carriers captured by the local carrier traps is calculated according to the apparent carrier trap intensity of each carrier trap at each measurement position.

3. The method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy according to claim 2, characterized in that: The step of obtaining a transient current curve of a target power device when the target power device switches from an off state to an on state and analyzing the transient current curve to obtain first carrier trap information includes: Connecting a circuit loop of the target power device to determine off-state parameters and on-state test parameters; Based on the off-state parameter and the on-state test parameter, collecting a transient current curve of the target power device when it switches from the off-state to the on-state; Based on Bayesian deconvolution, the transient current curve is analyzed to obtain the first carrier trap information, wherein the first carrier trap information is the type and time constant of the carrier trap under the current environment.

4. The method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy according to claim 2, wherein: Repeating the conversion of the target power device from the off state to the on state at different temperatures to obtain a temperature-dependent transient current curve, and analyzing the temperature-dependent transient current curve to obtain second carrier trap information includes: Repeating the conversion of the target power device from the off state to the on state at different temperatures to obtain the temperature-dependent transient current curve; Based on Bayesian deconvolution, the temperature-dependent transient current curve is analyzed to obtain the second carrier trap information, wherein the second carrier trap information is the energy level and capture cross-sectional area of each carrier trap.

5. The method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy according to claim 2, wherein: The method of using a dual-wavelength photoelectric Raman device to perform high spatial resolution scanning on the activated single carrier trap to measure the apparent carrier trap intensity of each carrier trap at each measurement position includes: emitting Raman excitation light and Raman detection light to the activated single carrier trap using the dual-wavelength photoelectric Raman device to measure the position carrier trap information; The current position of the target power device is changed multiple times according to the position carrier trap information, and the Raman excitation light and the Raman detection light are emitted to the target power device after each change to measure the apparent carrier trap intensity of each carrier trap at each measurement position.

6. The method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy according to claim 5, characterized in that: The method of using the dual-wavelength photoelectric Raman device to emit Raman excitation light and Raman detection light to the activated single carrier trap to measure the position carrier trap information includes: emitting the Raman excitation light to the activated single carrier trap using the dual-wavelength photoelectric Raman device to locally measure a first Raman spectrum measurement result; emitting the Raman probe light to the activated single carrier trap using the dual-wavelength photoelectric Raman device to locally measure a second Raman spectrum measurement result; The first Raman spectrum measurement result and the second Raman spectrum measurement result are subtracted to obtain the position carrier trap information.

7. The method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy according to claim 2, wherein: Calculating the number of carriers captured by the local carrier traps according to the apparent carrier trap intensity of each carrier trap at each measurement position includes: Detecting the target power device based on a transient current method to obtain the total number of captured carriers in carrier traps hidden in the fluctuation section; The total number of carriers captured by the carrier traps is distributed according to the apparent carrier trap intensity of each carrier trap at each measurement position to obtain the number of carriers captured by the local carrier traps.

8. An electronic device, characterized in that: include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman according to any one of claims 2 to 7.

9. A computer program product, characterized in that When the computer program / instruction is executed by a processor, the method for detecting carrier traps in power devices based on dual-wavelength photoelectric coupled Raman spectroscopy as described in any one of claims 2 to 7 is implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: The program is executed by a processor to implement the power device carrier trap detection method based on dual-wavelength photoelectric coupled Raman according to any one of claims 2 to 7.

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