Uniform flow structure and chemical vapor deposition equipment with same

Abstract

The invention relates to the technical field of chemical vapor deposition equipment, and discloses a flow uniformizing structure and chemical vapor deposition equipment with the flow uniformizing structure, the flow uniformizing structure comprises at least two first flow uniformizing plates which are arranged in parallel at intervals, and the first flow uniformizing plates are arranged on the gas conveying inlet side, close to a substrate, in a reaction cavity; a plurality of first through holes and a plurality of second through holes are formed in the first flow uniformizing plate, the first through holes are formed around the geometric center of the first flow uniformizing plate at intervals, the second through holes are formed in the first flow uniformizing plate in an array mode, and the hole diameter of the first through holes is larger than that of the second through holes; the gas pressure loss can be reasonably regulated and controlled through the first through holes in specific layout, the pressure difference generated due to high-speed passing of the gas flow is reduced, the flow velocity difference of the gas at the edge and the center area of the substrate is relieved, and the edge effect problem is weakened.

Description

Technical Field

[0001] The present invention relates to the technical field of chemical vapor deposition equipment, and in particular to a uniform flow structure and a chemical vapor deposition equipment having the same. Background Art

[0002] Chemical vapor deposition (CVD), the core technology for graphene film production, relies on a high-temperature, closed reaction system to achieve controlled material synthesis. This method involves the high-temperature thermal cracking of gaseous or solid carbon sources such as methane and ethanol, converting the carbon source molecules into highly reactive carbon atoms or radicals. These reactive species migrate to the surface of an insulating substrate under the action of gaseous transport, undergoing a series of processes including adsorption, surface diffusion, and chemical bonding, ultimately depositing to form a high-quality graphene film.

[0003] As the core component for regulating the gas flow field in the reaction chamber, the uniform flow plate achieves uniform dispersion of the reaction gas through a specific structural design to ensure smooth airflow in the chamber. Existing uniform flow plates mostly use a uniformly distributed circular hole structure. This design is difficult to meet the requirements for uniform gas distribution in the face of large-scale wafer preparation. When the high-temperature reaction gas flows through the uniform flow plate at high speed, the uniformly distributed circular hole layout cannot effectively control the gas pressure loss and flow rate differences. After the gas enters the cavity, due to the large size of the substrate, the gas flow rate in the edge area is faster, while the central area has a significantly lower gas arrival rate and concentration than the edge due to the complex air flow collision and diffusion path, forming an obvious "edge effect". In addition, due to the lack of refined guidance of the airflow direction, the single circular hole structure will also induce eddy currents or laminar flow unevenness on the substrate surface, further exacerbating the spatial differences in thickness and quality during the graphene film deposition process, seriously restricting the uniformity and quality consistency of the graphene film on the surface of large-scale wafers. Summary of the Invention

[0004] In view of this, the present invention provides a uniform flow structure and a chemical vapor deposition device having the same to solve the problem that the existing uniform flow plate cannot adapt to the preparation of large-size wafers and the uniformity of the graphene film on the substrate is easily unstable.

[0005] In a first aspect, the present invention provides a flow uniformity structure, comprising:

[0006] At least two first flow equalizers are arranged at intervals and in parallel, and the first flow equalizer is arranged on the gas delivery inlet side of the reaction chamber close to the substrate; the first flow equalizer is provided with a plurality of first through holes and a plurality of second through holes, and the plurality of first through holes are arranged at intervals around the geometric center of the first flow equalizer, and the second through holes are arranged in an array on the first flow equalizer, and the aperture of the first through hole is larger than the aperture of the second through hole.

[0007] Optionally, the number of the first through holes is two, a line connecting the two first through holes is parallel to the horizontal direction and passes through the geometric center of the first flow distributor, and the two first through holes are symmetrically arranged around the geometric center of the first flow distributor.

[0008] Optionally, the first flow uniforming plate is provided with at least one first clamping groove suitable for being installed in the interior of the reaction chamber, and the first clamping groove is provided at a lower level than the first through hole.

[0009] Optionally, at least two first flow equalizing grooves are further provided on the first flow equalizing plate, and the horizontal height thereof is higher than that of the first clamping grooves.

[0010] Optionally, when the two first through holes are horizontally symmetrically distributed about the geometric center of the first flow equalizer plate, the number of the first snap-in grooves and the first flow equalizer grooves are both two, the two first snap-in grooves are symmetrically arranged with the perpendicular bisector of the line connecting the two first through holes as the axis of symmetry, and the two first flow equalizer grooves are symmetrically arranged with the perpendicular bisector of the line connecting the two first through holes as the axis of symmetry.

[0011] Optionally, it also includes:

[0012] At least two second flow equalizers are arranged spaced apart and in parallel, the second flow equalizer is arranged parallel to the first flow equalizer, the second flow equalizer is arranged on the outlet side of the substrate in the reaction chamber close to the gas delivery, at least two third through holes and multiple fourth through holes are arranged on the second flow equalizer, the third through holes are arranged on opposite sides away from the geometric center of the second flow equalizer, and the line connecting at least two of the third through holes is arranged parallel to the vertical direction, the fourth through holes are arranged in an array on the second flow equalizer, and the aperture of the third through hole is larger than the aperture of the fourth through hole.

[0013] Optionally, the second flow uniforming plate is provided with at least one second snap-fitting groove suitable for being installed inside the reaction chamber. When the two third through holes are vertically distributed, the number of the second snap-fitting grooves is two, and the two second snap-fitting grooves are symmetrically arranged with the line connecting the two third through holes as the axis of symmetry.

[0014] Optionally, at least two second flow equalizing grooves are further provided on the second flow equalizing plate, and the two second flow equalizing grooves are symmetrically arranged with the line connecting the two third through holes as the symmetry axis, and the horizontal height is higher than the second clamping groove.

[0015] Optionally, the aperture of the third through hole is larger than the aperture of the first through hole;

[0016] And / or, the aperture of the second through hole is equal to the aperture of the fourth through hole.

[0017] Beneficial effects

[0018] The flow uniformity structure provided by the present invention includes at least two first flow uniformity plates spaced apart and arranged in parallel, wherein the first flow uniformity plates are arranged on the gas delivery inlet side of the reaction chamber near the substrate; the first flow uniformity plates are provided with a plurality of first through holes and a plurality of second through holes, wherein the plurality of first through holes are spaced apart around the geometric center of the first flow uniformity plates, and the second through holes are arranged in an array on the first flow uniformity plates, and the aperture of the first through holes is larger than the aperture of the second through holes. The flow uniformity structure of the present invention uses a plurality of first flow uniformity plates spaced apart and perpendicular to the gas delivery direction, and arranges the plurality of first through holes in an array around the geometric center of the first flow uniformity plates and the second through holes, thereby effectively improving the gas flow field distribution. The first through-holes with a specific layout can reasonably regulate the gas pressure loss, reduce the pressure difference caused by the high-speed passage of the airflow, alleviate the difference in gas flow velocity at the edge and center areas of the substrate, and weaken the "edge effect" problem; on the other hand, the second through-holes arranged in an array cooperate with the first through-holes to finely guide the direction of the airflow, reduce the probability of eddy currents or laminar unevenness on the substrate surface, thereby improving the uniformity and quality consistency of the thickness and quality during the deposition of graphene films on the surface of large-size wafers, and meeting the requirements of large-size wafer preparation for uniform gas distribution.

[0019] In a second aspect, the present invention provides a chemical vapor deposition device, comprising a reaction chamber and a uniform flow structure as described above, wherein the uniform flow structure is arranged in the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 Schematic diagram of the structure of the first flow plate according to an embodiment of the present invention;

[0022] Figure 2 A side view of a first flow distributor according to an embodiment of the present invention;

[0023] Figure 3 A schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention;

[0024] Figure 4 Schematic diagram of the structure of the second flow plate according to an embodiment of the present invention

[0025] Figure 5The resistance distribution diagram of the traditional current equalizer and the corresponding statistical histogram;

[0026] Figure 6 The resistance distribution diagram and corresponding statistical histogram of the current uniformity structure according to an embodiment of the present invention;

[0027] Description of reference numerals:

[0028] 1. First flow equalizer plate; 11. First through hole; 12. Second through hole; 13. First clamping groove; 14. First flow equalizer groove;

[0029] 2. Second flow equalizer plate; 21. Third through hole; 22. Fourth through hole; 23. Second clamping groove; 24. Second flow equalizer groove;

[0030] 3. Connectors; 4. Substrate; 5. Graphene preparation carrier. DETAILED DESCRIPTION

[0031] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts shall fall within the scope of protection of the present invention.

[0032] The following combination Figures 1 to 6 , describing embodiments of the present invention.

[0033] According to an embodiment of the present invention, on the one hand, a flow uniformity structure is provided, comprising:

[0034] At least two first flow equalizer plates 1 are arranged spaced apart and in parallel, and the first flow equalizer plate 1 is arranged on the gas delivery inlet side close to the substrate 4 in the reaction chamber; a plurality of first through holes 11 and a plurality of second through holes 12 are provided on the first flow equalizer plate 1, and the plurality of first through holes 11 are arranged spaced apart around the geometric center of the first flow equalizer plate 1, and the second through holes 12 are arranged in an array on the first flow equalizer plate 1, and the aperture of the first through hole 11 is larger than the aperture of the second through hole 12.

[0035] In this embodiment, a 12-inch square substrate 4 is taken as an example to describe the specific structure of the first uniform flow plate 1. The first uniform flow plate 1 uses a circular plate with a diameter of 33 cm and a thickness of 0.5 cm as a substrate. The aperture of the first through hole 11 is 3.3 cm, and the aperture of the second through hole 12 is 1 cm. The second through holes 12 are evenly arranged on the plate surface of the first uniform flow plate 1.

[0036] Specifically, the plate surface direction of the first flow uniforming plate 1 is arranged perpendicular to the gas conveying direction.

[0037] The flow uniformity structure provided in this embodiment is characterized by a plurality of first flow uniformity plates 1 arranged in parallel and spaced relation and perpendicular to the direction of gas delivery, with a plurality of first through holes 11 arranged in an array around the geometric center of the first flow uniformity plate 1 and the second through holes 12, which can effectively improve the distribution of the gas flow field. The first through holes 11 of a specific layout can reasonably regulate the gas pressure loss, reduce the pressure difference caused by the high-speed passage of the gas flow, alleviate the difference in gas velocity between the edge and the center of the substrate 4, and weaken the "edge effect" problem; on the other hand, the second through holes 12 cooperate with the first through holes 11 to finely guide the direction of the gas flow, reduce the probability of eddy currents or uneven laminar flow on the surface of the substrate 4, thereby improving the uniformity and quality consistency of the thickness and quality during the deposition of the graphene film on the surface of the large-scale wafer, and meeting the requirements of large-scale wafer preparation for uniform gas distribution.

[0038] Furthermore, there are two first through holes 11 , the line connecting the two first through holes 11 is parallel to the horizontal direction, the midline of the line is concentric with the center line of the substrate 4 set in the horizontal direction, and the two first through holes 11 are symmetrically arranged about the geometric center of the first uniform flow plate 1 .

[0039] Two first through holes 11 with a 3.3 cm aperture are symmetrically distributed on both sides of the geometric center of the first uniform flow plate 1. When the gas enters the reaction chamber, it can guide the airflow in the central area, reduce the diffusion resistance of the gas in the central area of the substrate 4, reduce the concentration loss of the gas due to collisions and complex diffusion paths, and balance the gas arrival rate with the edge area. The second through holes 12 with a 1 cm aperture are evenly arranged on the plate surface to form a dense airflow channel network, which can finely cut and divert the high-speed airflow, weaken the high-speed kinetic energy of the gas, and avoid severe disturbances of the airflow on the surface of the substrate 4. These second through holes 12 restrict the direction of gas flow, promote the diffusion of gas on the surface of the substrate 4 in a stable and uniform manner, effectively suppress eddy currents and laminar flow unevenness, so that the reaction gas with consistent concentration and uniform flow rate can be obtained everywhere on the surface of the large-sized square substrate 4, thereby ensuring high-quality and uniform deposition of graphene film on the 12-inch substrate 4.

[0040] Of course, there may be three, four or five first through holes 11, and the plurality of first through holes 11 are evenly distributed around the geometric center of the first flow equalizer plate 1. Here, the number of the first through holes 11 is not specifically limited.

[0041] It should be noted that the number of first through holes 11 should not be too large. If the number of first through holes 11 is too large, the gas will be too concentrated and pass through these larger aperture holes quickly, weakening the dispersion and refinement effect of the second through holes 12 on the gas, making it difficult for the gas to form a uniform and stable flow field on the surface of the substrate 4. Therefore, in practical applications, it is necessary to comprehensively consider factors such as the flow rate and flow velocity of the reaction gas, the size of the substrate 4, and the process requirements for graphene film preparation, and reasonably select the number of first through holes 11 to achieve optimal regulation of the gas flow field and ensure uniform deposition and high-quality preparation of graphene films on the surface of large-size wafers. Here, when the size of the substrate 4 is 12 inches, the number of first through holes 11 is two, which can achieve the optimal preparation effect.

[0042] Furthermore, the first flow uniforming plate 1 is provided with at least one first clamping groove 13 suitable for being installed inside the reaction chamber, and the first clamping groove 13 is provided at a lower level than the first through hole 11 .

[0043] In this embodiment, two circular tubes parallel to the airflow direction are provided within the reaction chamber as the clamping portions for securing the flow-distributing structure. Two first clamping grooves 13 are provided, and their shape conforms to the radial interface of the circular tubes. Specifically, the first clamping grooves 13 are oblong grooves with a diameter of 7 cm, with the notches facing outward. This facilitates conformal engagement with the clamping portions of the circular tubes within the reaction chamber, which are parallel to the airflow direction, thereby ensuring a secure installation of the first flow-distributing plate 1 within the reaction chamber.

[0044] It is easy to understand that this installation method not only ensures that the relative position of the first flow plate 1 and the reaction chamber is fixed, and ensures that its plate surface is always perpendicular to the gas delivery direction, thereby maintaining the stability of the gas flow field; but also in a high-temperature reaction environment, even if there is a certain degree of thermal expansion or vibration inside the reaction chamber, the design of the oblong groove can provide a certain buffer space to avoid the position displacement or damage of the first flow plate 1 due to the rigid collision between the components, thereby ensuring that its uniform dispersion of gas and flow field regulation function are not affected. At the same time, the first clamping groove 13 is set lower than the first through hole 11, so that the first clamping groove 13 will not interfere with the normal drainage of gas by the first through hole 11 and the second through hole 12, ensuring that the gas can be evenly distributed on the surface of the substrate 4 according to the designed path, which is conducive to the continuous preparation of high-quality and uniform graphene films on the 12-inch square substrate 4.

[0045] Furthermore, at least two first flow equalizing grooves 14 are provided on the first flow equalizing plate 1 , and the horizontal height thereof is higher than that of the first clamping grooves 13 .

[0046] In this embodiment, the number of the first uniform flow grooves 14 is two, and the two first uniform flow grooves 14 are arranged with the perpendicular bisector of the line connecting the two first through holes 11 as the central axis, corresponding to the first clamping groove 13 provided on the first uniform flow plate 1. Specifically, the first uniform flow groove 14 is a part of a rectangular groove with a short side of 7 cm and a long side of 8.5 cm. The first uniform flow groove 14 is arranged at a position that does not affect the stable connection between the first clamping groove 13 and the clamping part of the reaction chamber circular tube, which not only ensures the reliable fixation of the first uniform flow plate 1 in the chamber, but also realizes the fine control of the gas through the reasonable hole position distribution. During the preparation process of the 12-inch square substrate 4, it can ensure that the entire surface of the substrate 4 can obtain a uniform gas concentration and flow rate, providing a guarantee for the uniform deposition of high-quality graphene film.

[0047] As can be easily understood, the configuration of the first flow-distributing groove 14 provides an additional flow channel for the reaction gas. Once the gas enters the reaction chamber, some of the gas can be accelerated through the first flow-distributing groove 14 toward the edge of the substrate 4, effectively balancing the difference in gas flow velocity between the edge and center of the substrate 4 and further reducing the "edge effect." Furthermore, the symmetrical arrangement of the first flow-distributing groove 14 and the first engaging groove 13 allows the gas to form a more uniform and stable laminar flow on the surface of the substrate 4 as it passes through the first flow-distributing plate 1, reducing the generation of eddy currents.

[0048] Furthermore, when the two first through holes 11 are horizontally symmetrically distributed about the geometric center of the first flow equalizer plate 1, the number of the first snap-in grooves 13 and the first flow equalizer grooves 14 are both two, and the two first snap-in grooves 13 are symmetrically arranged with the perpendicular bisector of the line connecting the two first through holes 11 as the axis of symmetry, and the two first flow equalizer grooves 14 are symmetrically arranged with the perpendicular bisector of the line connecting the two first through holes 11 as the axis of symmetry.

[0049] Furthermore, it also includes:

[0050] At least two second flow equalizer plates 2 are arranged at intervals and in parallel, the second flow equalizer plate 2 is arranged parallel to the first flow equalizer plate 1, and the second flow equalizer plate 2 is arranged on the side of the substrate 4 in the reaction chamber close to the gas delivery outlet. At least two third through holes 21 and multiple fourth through holes 22 are provided on the second flow equalizer plate 2, the third through holes 21 are arranged on opposite sides away from the geometric center of the second flow equalizer plate 2, and the line connecting at least two third through holes 21 is arranged parallel to the vertical direction, the fourth through holes 22 are arranged in an array on the second flow equalizer plate 2, and the aperture of the third through hole 21 is larger than the aperture of the fourth through hole 22.

[0051] In this embodiment, a 12-inch square substrate 4 is taken as an example to describe the specific structure of the second uniform flow plate 2. The second uniform flow plate 2 uses a circular plate with a diameter of 33 cm and a thickness of 0.5 cm as the base. The aperture of the third through hole 21 is 6 cm, and the aperture of the fourth through hole 22 is 1 cm. The fourth through holes 22 are evenly arranged on the plate surface of the second uniform flow plate 2.

[0052] As is readily understood, the multi-stage second flow plate 2 regulates the gas flow field within the reaction chamber. The second flow plate 2 is located on the gas outlet side, and the layout of the third and fourth through-holes 21 and 22 complements the first flow plate 1 to secondary adjust the direction and distribution of the gas flow. This synergy effectively reduces eddy currents, ensuring uniform and stable graphene film deposition on the large square substrate 4.

[0053] Of course, the number of the third through holes 21 can also be three or four or more, and the multiple third through holes 21 are evenly distributed at intervals near the edge of the second flow equalizer plate 2 . The number of the third through holes 21 is not specifically limited here.

[0054] Furthermore, the second flow uniforming plate 2 is provided with at least one second snap-fitting groove 23 suitable for being installed inside the reaction chamber. When the two third through holes 21 are vertically distributed, the number of the second snap-fitting grooves 23 is two, and the two second snap-fitting grooves 23 are symmetrically arranged with the line connecting the two third through holes 21 as the axis of symmetry.

[0055] Specifically, the specific configuration of the second clamping slot 23 is the same as that of the first clamping slot 13 , and will not be repeated here.

[0056] Furthermore, at least two second flow equalizing grooves 24 are provided on the second flow equalizing plate 2 . The two second flow equalizing grooves 24 are symmetrically arranged with the line connecting the two third through holes 21 as the symmetry axis, and their horizontal height is higher than the second clamping groove 23 .

[0057] Specifically, the specific configuration of the second flow balancing groove 24 is the same as that of the first flow balancing groove 14, and will not be repeated here.

[0058] Furthermore, the diameter of the third through hole 21 is larger than the diameter of the first through hole 11 .

[0059] As can be easily understood, the larger diameter of third through-hole 21 than first through-hole 11 reduces gas flow resistance at the end of the reaction chamber, preventing gas congestion. This also facilitates adequate gas diffusion. Combined with its unique layout, it further balances gas concentration and flow rate across substrate 4, ensuring uniform graphene film deposition and improving the quality of large-scale wafer fabrication.

[0060] Furthermore, the aperture of the second through hole 12 is set equal to the aperture of the fourth through hole 22 .

[0061] Furthermore, the number of the first flow equalizer plates 1 is three, and the three first flow equalizer plates 1 are spaced apart and connected by connecting members 3 .

[0062] Furthermore, the number of the second flow equalizer plates 2 is three, and the three second flow equalizer plates 2 are spaced apart and connected by connecting members 3 .

[0063] It is easy to understand that the three first flow equalizers 1 and the three second flow equalizers 2 are respectively connected at intervals by connectors 3, which can form a multi-stage gas diversion and regulation structure to improve the uniformity and stability of the gas flow field. The setting of the multi-stage flow equalizer can divert and integrate the gas multiple times, gradually weakening the difference in gas flow rate and concentration. Compared with the single-stage flow equalizer, it can more effectively suppress the "edge effect" and eddy current phenomenon. The spacing design of the connector 3 ensures that a stable gas buffer and flow guide space is formed between adjacent flow equalizers, so that the gas can gradually achieve uniform diffusion when passing through the multi-stage flow equalizer, providing a stable and uniform gas environment for the deposition of graphene films on the surface of large-size wafers, thereby greatly improving the quality consistency of the film.

[0064] Specifically, the connecting member 3 is a cylindrical connecting member 3 with a length of 5 cm and a diameter of 2 cm. The two ends of the cylindrical connecting member 3 are respectively abutted against the first flow equalizer plate 1 or the second flow equalizer plate 2 on both sides. Multiple connecting members 3 are evenly arranged on the plate surface of the first flow equalizer plate 1 or the second flow equalizer plate 2, avoiding the positions where the holes are opened.

[0065] According to an embodiment of the present invention, on the other hand, this embodiment further provides a chemical vapor deposition device, including a reaction chamber and the uniform flow structure described above.

[0066] like Figure 4 As shown. The chemical vapor deposition equipment includes a reaction chamber, a graphene preparation carrier 4 for placing a substrate 4, and a uniform flow structure. The uniform flow structure includes three first uniform flow plates 1 connected at intervals by a connector 3, which are placed on the side of the reaction chamber close to the gas delivery inlet, and the plate surface is provided with two first through holes 11 at specific positions, a plurality of second through holes 12 arranged in an array, two first clip grooves 13 and two first uniform flow grooves 14; there are also three second uniform flow plates 2 that are also connected at intervals by a connector 3, which are arranged on the side of the reaction chamber close to the gas delivery outlet, and the plate surface is provided with two third through holes 21 on both sides of the geometric center and the connecting line is perpendicular to the connecting line of the first through holes 11, as well as a plurality of fourth through holes 22 arranged in an array, two second clip grooves 23 and two second uniform flow grooves 24; a graphene preparation carrier 5 is provided in the middle of the reaction chamber for carrying the substrate 4 for chemical vapor reaction.

[0067] It should be noted that in order to verify the uniform gas effect of the uniform flow structure of this embodiment in a large-scale CVD reaction system and its effect on improving the uniformity of graphene deposition, a surface resistance (Rs) distribution test was performed on a 12-inch graphene silicon wafer.

[0068] Figure 5 and Figure 6 The graphene film samples prepared under two different uniform flow conditions are shown. Their surface resistance distribution diagrams and corresponding statistical histograms are shown in the figure. The horizontal axis is the surface resistance value and the vertical axis is the number of measurement points. Figure 4 The surface resistance of the graphene sample prepared using a conventional flow plate is relatively discrete, with a wide statistical distribution and a long tail, indicating that the uneven gas distribution causes large differences in electrical conductivity between regions of the graphene film. Figure 5 The surface resistance distribution of the graphene film prepared using the uniform flow structure provided in this embodiment is significantly converged, mainly concentrated in the range of 400-700Ω / sq, and the statistical histogram distribution is concentrated and well symmetrical, indicating that the deposition of the graphene film layer on the 12-inch silicon wafer substrate 4 is more uniform.

[0069] Furthermore, the sheet resistance mapping shows that the conventional flow distribution plate exhibits a brighter edge region on the wafer surface due to significant thermal / flow field unevenness. However, with the optimized flow distribution structure, the overall sheet resistance exhibits a highly uniform blue distribution. This experiment demonstrates the excellent process adaptability and graphene quality consistency of the flow distribution structure in this embodiment in large-scale CVD equipment.

[0070] Although the embodiments of the present invention have been described with reference to the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention. Such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A uniform flow structure, characterized in that: include: At least two first flow-distributing plates (1) are arranged at intervals and in parallel, wherein the first flow-distributing plates (1) are arranged on a gas delivery inlet side close to a substrate (4) in a reaction chamber; a plurality of first through holes (11) and a plurality of second through holes (12) are provided on the first flow-distributing plate (1), wherein the plurality of first through holes (11) are arranged at intervals around the geometric center of the first flow-distributing plate (1), and the second through holes (12) are arranged in an array on the first flow-distributing plate (1), and the aperture of the first through hole (11) is larger than the aperture of the second through hole (12).

2. The flow uniformity structure according to claim 1, characterized in that: The number of the first through holes (11) is two, the line connecting the two first through holes (11) is parallel to the horizontal direction and passes through the geometric center of the first flow equalizer plate (1), and the two first through holes (11) are symmetrically arranged around the geometric center of the first flow equalizer plate (1).

3. The flow uniformity structure according to claim 2, characterized in that: The first flow-distributing plate (1) is provided with at least one first clamping groove (13) suitable for being installed inside the reaction chamber, and the first clamping groove (13) is arranged at a level lower than that of the first through hole (11).

4. The flow uniformity structure according to claim 3, characterized in that: At least two first flow equalizing grooves (14) are also provided on the first flow equalizing plate (1), and the horizontal height thereof is higher than that of the first clamping groove (13).

5. The flow uniformity structure according to claim 4, characterized in that: When the two first through holes (11) are horizontally symmetrically distributed around the geometric center of the first flow equalizing plate (1), the two first clamping grooves (13) are symmetrically arranged around the perpendicular midline of the line connecting the two first through holes (11) as the axis of symmetry, and the two first flow equalizing grooves (14) are symmetrically arranged around the perpendicular midline of the line connecting the two first through holes (11) as the axis of symmetry.

6. The flow uniformity structure according to any one of claims 1 to 5, characterized in that: Also includes: At least two second flow equalizer plates (2) are arranged at intervals and in parallel, the second flow equalizer plates (2) are arranged parallel to the first flow equalizer plate (1), the second flow equalizer plate (2) is arranged on the outlet side of the substrate (4) in the reaction chamber close to the gas delivery, at least two third through holes (21) and a plurality of fourth through holes (22) are arranged on the second flow equalizer plate (2), the third through holes (21) are arranged on two opposite sides away from the geometric center of the second flow equalizer plate (2), and the connecting line of at least two of the third through holes (21) is arranged parallel to the vertical direction, the fourth through holes (22) are arranged in an array on the second flow equalizer plate (2), and the aperture of the third through hole (21) is larger than the aperture of the fourth through hole (22).

7. The flow uniformity structure according to claim 6, characterized in that: The second flow-distributing plate (2) is provided with at least one second clamping groove (23) suitable for being installed inside the reaction chamber. When the two third through holes (21) are vertically distributed, the number of the second clamping grooves (23) is two, and the two second clamping grooves (23) are symmetrically arranged with the line connecting the two third through holes (21) as the symmetry axis.

8. The flow uniformity structure according to claim 7, characterized in that: At least two second flow equalizing grooves (24) are also provided on the second flow equalizing plate (2), and the two second flow equalizing grooves (24) are symmetrically arranged with the line connecting the two third through holes (21) as the symmetry axis, and their horizontal height is higher than that of the second clamping groove (23).

9. The flow uniformity structure according to claim 6, characterized in that: The aperture of the third through hole (21) is larger than the aperture of the first through hole (11); and / or, The aperture of the second through hole (12) is equal to the aperture of the fourth through hole (22).

10. A chemical vapor deposition apparatus comprising a reaction chamber, characterized in that: It also includes the uniform flow structure according to any one of claims 1 to 9, wherein the uniform flow structure is arranged in the reaction chamber.

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