Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Abstract

The invention provides a semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device, which can perform electrical characteristic inspection in a state that a separated chip is pasted on a cutting belt. A semiconductor device according to the present invention comprises: a stage on which a dicing tape on which a plurality of semiconductor chips are attached is placed; a probe which is provided on the stage, is inserted into the dicing tape, and is in contact with the semiconductor chip; and a tester that inspects the electrical characteristics of the semiconductor chip through the probe.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor apparatus. Background Art

[0002] Conventionally, the electrical characteristics of semiconductor devices, whose front and back surfaces serve as electrodes, have been measured either in the wafer state or in the chip state. However, wafer-based measurements cannot account for damage during the dicing process used to separate the chips, and chip-based measurements require transporting the separated chips, which can lead to transportation-related failures and increased equipment investment. Therefore, for example, Patent Document 1 proposes using a dicing tape with multiple holes formed to match the positions of the separated chips within the wafer, and measuring the separated chips on the dicing tape. Prior art literature Patent Literature

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-229635 Summary of the Invention Technical problem to be solved by the invention

[0004] However, in Patent Document 1, since dicing is performed using a dicing tape having holes, there is a possibility that the fixing force of the wafer may be weakened during dicing.

[0005] The present disclosure has been made to solve the above-mentioned problem, and an object thereof is to provide a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device, which can perform electrical characteristic inspection while separated chips are attached to a dicing tape. Technical means for solving technical problems

[0006] The semiconductor manufacturing device involved in the present disclosure includes: a platform, which carries a dicing tape, and the dicing tape has a plurality of semiconductor chips attached thereto; a probe, which is arranged on the platform, inserted into the interior of the dicing tape and contacts the semiconductor chips; and a tester, which uses the probe to inspect the electrical characteristics of the semiconductor chips.

[0007] The manufacturing method of the semiconductor device involved in the present disclosure includes: an insertion process in which a dicing tape with a plurality of semiconductor chips attached thereto is placed on a platform, and a probe provided on the platform is inserted into the interior of the dicing tape and electrically connected to the semiconductor chips; and an inspection process in which the electrical characteristics of the semiconductor chips are inspected by the probe. Effects of the Invention

[0008] According to the semiconductor manufacturing apparatus and the semiconductor device manufacturing method according to the present disclosure, it is possible to perform an electrical characteristic inspection while separated chips are attached to a dicing tape. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a plan view showing the semiconductor manufacturing apparatus according to the first embodiment. Figure 2 This is a cross-sectional view showing the semiconductor manufacturing apparatus according to the first embodiment. Figure 3 This is a flowchart of a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to the first embodiment. Figure 4 This is a cross-sectional view showing a semiconductor manufacturing apparatus according to the second embodiment. Figure 5 This is a cross-sectional view showing a semiconductor manufacturing apparatus according to a third embodiment. Figure 6 This is a cross-sectional view showing a semiconductor manufacturing apparatus according to a third embodiment. Figure 7 A diagram illustrating a method for manufacturing a semiconductor device using a modified example of the semiconductor manufacturing apparatus according to the third embodiment. Figure 8 1 is a flowchart illustrating a method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus according to a comparative example. Figure 9 It is a diagram showing a modified example of the dicing tape. DETAILED DESCRIPTION

[0010] The following describes the embodiments with reference to the accompanying drawings. Since the accompanying drawings are schematic, the relationship between the size and position can be changed. In the following description, the same or corresponding components are sometimes given the same reference numerals, and repeated descriptions are omitted.

[0011] In addition, in the following description, terms such as "upper", "lower", and "side" are sometimes used to indicate specific positions and directions, but these terms are used to facilitate understanding of the content of the implementation method and do not limit the position and direction during implementation.

[0012] <Implementation Method 1> Figure 1 and Figure 2 Detailed Description of the Preferred Embodiment 1 shows a semiconductor manufacturing apparatus according to the first embodiment. Figure 1 1 is a plan view showing the semiconductor manufacturing apparatus according to the first embodiment, and is a plan view showing the semiconductor wafer 10 held on the mounting frame 5 . Figure 2 is a cross-sectional view showing a semiconductor manufacturing apparatus according to the first embodiment. Figure 1 A cross-sectional view of the device when placed on the platform 3 at the dotted line AA.

[0013] The semiconductor wafer 10 has electrodes (not shown) on both the front and back surfaces, and the dicing tape 2 is attached to the semiconductor wafer 10 via the electrodes. The electrodes are made of metal, such as gold or aluminum. For example, semiconductor materials such as Si or wide-bandgap semiconductors such as SiC, GaN, or Ga2O3 can be used for the semiconductor wafer 10. Semiconductor elements formed on the semiconductor wafer 10 include diodes, insulated gate bipolar transistors (IGBTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), which serve as switching elements.

[0014] Figure 1 、 Figure 2 The semiconductor wafer 10 is shown in a state after being cut. When the semiconductor wafer 10 is cut, the semiconductor wafer 10 becomes a plurality of separate semiconductor chips 1, and the individual chips are arranged on the cutting tape 2 at fixed intervals. The cutting tape 2 is an adhesive tape provided with an adhesive material on one side of the semiconductor wafer 10. The adhesive material can be, for example, a material that is responsive to ultraviolet rays and whose adhesive strength decreases in response to ultraviolet rays compared to before ultraviolet irradiation, such as UV-curable polyolefin. In addition, the cutting tape 2 has no openings. Here, Figure 9 A modified example of the cutting tape 2 is shown in FIG. Figure 9 As shown, the adhesive material of the dicing tape 2 can use a conductive adhesive material 9 having conductivity.

[0015] A plurality of suction holes (not shown) may be formed on the platform 3. The positions of the suction holes may be set at positions different from those of the probes 4. The semiconductor chip 1 may be adsorbed onto the platform 3 via the dicing tape 2 by the adsorption effect from the suction holes. The plurality of suction holes are preferably arranged symmetrically with respect to the center of the wafer.

[0016] The probe 4 is electrically connected to a tester (not shown) and serves as a probe terminal for electrical property testing. Since the diameter of the probe 4 tapers toward the front end, the probe 4 can be inserted into the dicing tape 2 and electrically connected to the back surface of the semiconductor chip 1.

[0017] The probe 4 may be made of a material that can penetrate the dicing tape 2 , but is preferably made of a material that is the same as or softer than the material of the back surface of the semiconductor wafer 10 and can penetrate the dicing tape 2 , such as metal that can suppress damage to the back surface of the semiconductor chip 1 .

[0018] Here, a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to the first embodiment will be described. Figure 3This is a flowchart of a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to the first embodiment.

[0019] In the forming step S001 of manufacturing the semiconductor wafer 10 , ion implantation or the like is performed to form a plurality of semiconductor elements in a matrix on the semiconductor wafer 10 .

[0020] Next, in the mounting step S002, the semiconductor wafer 10 as the workpiece is attached to the center of the dicing tape 2 held by the annular mounting frame 5. The mounting frame 5 is an annular frame and can be made of, for example, a metal with a passivation film formed on the surface, or a resin material.

[0021] The dicing tape 2 is, for example, an adhesive tape having an adhesive material provided on one side thereof to be adhered to the semiconductor wafer 10. The adhesive material is, for example, UV-responsive, and its adhesive strength decreases in response to UV rays compared to before UV irradiation. The dicing tape 2 has no openings.

[0022] Furthermore, before the mounting step S002, a protective tape application step (not shown) may be performed to apply protective tape (not shown) to protect the pattern forming the semiconductor elements disposed on the front surface of the semiconductor wafer 10. This protects the pattern forming the semiconductor elements in subsequent steps. Furthermore, in the dicing step S003, by cutting the semiconductor wafer 10 with the protective tape applied, damage or cracking of the semiconductor wafer 10 during cutting can be suppressed. Furthermore, the protective tape is removed before the chip testing step S005.

[0023] The adhesive material of the protective tape is, for example, UV-responsive and is a material whose adhesive strength decreases in response to UV rays compared to before UV irradiation.

[0024] Next, in a dicing step S003, the semiconductor wafer 10 affixed to the dicing tape 2 is separated from the wafer state into a chip state, forming a plurality of semiconductor chips 1 in a grid pattern. During separation, dicing is performed so that only the semiconductor wafer 10 is cut without cutting the dicing tape 2. Dicing is performed by blade dicing, laser dicing, or the like.

[0025] Next, in the insertion step S004, while the semiconductor chips 1 are placed on the dicing tape 2, probes 4 are inserted into the dicing tape 2 to establish electrical connection with the separated semiconductor chips 1. Because the diameter of the probes 4 tapers toward the tip, they can be inserted into the dicing tape 2 and establish electrical connection with the back surface of the semiconductor chips 1. Furthermore, the probes 4 are positioned within the platform 3, protruding upward from the surface of the platform 3, thereby penetrating the dicing tape 2 and contacting the semiconductor chips 1.

[0026] Furthermore, while the semiconductor chip 1 and dicing tape 2 are being attracted to the stage 3, the probe 4 penetrates the dicing tape 2, allowing the probe 4 to contact the semiconductor chip 1 with high precision. Furthermore, the probe 4 can be inserted through the dicing tape 2 and contact one semiconductor chip 1, or multiple probes 4 can be inserted through the dicing tape 2 and contact one semiconductor chip 1. In other words, the number of probes inserted through the dicing tape 2 can be arbitrarily varied depending on the size of the semiconductor chip 1.

[0027] In addition, if Figure 9 As shown, when conductive adhesive material 9 is applied to the surface of dicing tape 2, probe 4 does not need to penetrate dicing tape 2. Providing conductive adhesive material 9 allows for electrical continuity before probe 4 contacts the back surface of semiconductor chip 1. Specifically, when the tip of probe 4 reaches conductive adhesive material 9, probe 4 does not need to contact the back surface of semiconductor chip 1. This prevents damage to semiconductor chip 1 due to the pressing force of probe 4, improving productivity.

[0028] Next, in the chip test step S005 , with the dicing tape 2 attached, an electrical signal is applied from the probe 4 to the semiconductor chip 1 , and electrical characteristic inspection, appearance inspection, etc. of the semiconductor chip 1 are performed.

[0029] Next, in the transfer step S006, the separated chips are picked up from the dicing tape and transferred. Furthermore, during the pickup process, when the probes 4 penetrate the dicing tape 2 and pick up the semiconductor chip 1 after chip testing, the probes 4 electrically connected to the semiconductor chip 1 can be further lifted upward to pick up the semiconductor chip 1. Lifting the probes 4 upward to pick up the semiconductor chip 1 after chip testing improves productivity. Furthermore, considering pickup, the multiple probes 4 penetrating the dicing tape 2 are preferably arranged toward the center of a single semiconductor chip 1 or symmetrically relative to the chip center.

[0030] on the other hand, Figure 8 1 is a flowchart illustrating a method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus according to a comparative example.

[0031] The semiconductor manufacturing apparatus according to the comparative example differs from the semiconductor manufacturing apparatus according to Embodiment 1 in that the probe does not penetrate the dicing tape. Specifically, in the semiconductor manufacturing apparatus according to the comparative example, the probe is used only to pick up semiconductor chips from the dicing tape, and therefore the diameter of the probe does not taper toward the tip to penetrate the dicing tape.

[0032] In the formation step S011 for manufacturing a semiconductor wafer, a plurality of semiconductor elements are formed in a matrix on a semiconductor wafer subjected to ion implantation, etc. In the wafer testing step S012, electrical characteristics inspection, appearance inspection, etc. are performed on the wafer.

[0033] In the mounting step S013, a semiconductor wafer, the workpiece, is attached to the center of a dicing tape held by a ring-shaped mounting frame. Next, in the dicing step S014, the semiconductor wafer attached to the dicing tape is separated from the wafer state to the chip state. During separation, dicing is performed so that only the wafer is severed, without cutting the dicing tape.

[0034] Next, in a transfer step S015, the separated chips are picked up from the dicing tape and transferred. Next, in a chip testing step S016, electrical characteristics inspection, appearance inspection, etc. are performed on the chips.

[0035] In the comparative example, electrical characteristics inspection is performed on the wafer before the mounting step ( S013 ), and then on the separated chips after the transfer step ( S015 ). Measuring only on the wafer fails to account for damage in the dicing step ( S014 ) of separating the chips, and requires additional testing on the chips. This increases the number of steps required to perform electrical characteristics inspection twice. Furthermore, testing on the chips requires picking up the separated chips and then transporting them on a chip tray for inspection, potentially causing transport-related problems.

[0036] In the method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus of embodiment 1, by using a probe 4 whose diameter becomes thinner toward the front end after the cutting process S003 as a measuring terminal, the probe 4 is inserted into the inside of the dicing tape 2 and electrically connected to the separated semiconductor chip 1. As a result, the electrical characteristics of the semiconductor chip 1 can be inspected while the dicing tape 2 is attached, and qualified / unqualified products can be detected and distinguished. That is, the above-mentioned problem can be solved, and the electrical characteristics inspection taking into account the damage in the dicing process S003 can be carried out at one time without any transmission-related failures, which can improve productivity. In addition, compared with the existing technology that uses a dicing tape with a hole and makes the probe contact the semiconductor chip at the part of the hole, the semiconductor manufacturing apparatus of embodiment 1 uses a dicing tape without a hole as the dicing tape 2, so there is no concern that the fixing force of the semiconductor chip 10 will be weakened during dicing.

[0037] <Implementation Method 2> use Figure 4 The structure of the semiconductor manufacturing apparatus according to the second embodiment will be described. Figure 4 2 is a cross-sectional view showing a semiconductor manufacturing apparatus according to Embodiment 2. In Embodiment 2, components identical to those described in Embodiment 1 are denoted by the same reference numerals, and description thereof is omitted. This also applies to the following embodiments.

[0038] like Figure 4As shown, the semiconductor manufacturing apparatus of the second embodiment differs in that the probe 4 of the semiconductor manufacturing apparatus according to the first embodiment is replaced with a spring probe 6. The spring probe 6 includes a spring 7, which acts as a spring and has a structure in which its diameter tapers toward the tip. This structure maintains a constant pressing force when the tip of the spring probe 6 is brought into contact with the semiconductor chip 1. Furthermore, the spring probe 6 is conductive, and an electrical signal from the tip of the spring probe 6, which is electrically connected to the semiconductor chip 1, is input to a tester (not shown) via the spring 7.

[0039] When semiconductor devices are manufactured using the semiconductor manufacturing apparatus according to the second embodiment, the use of spring probes 6 stabilizes the upward force of the probes 4, thereby preventing the probes 4 from penetrating the dicing tape 2 and causing damage to the semiconductor chip 1. Furthermore, since good electrical contact is maintained between the semiconductor chip 1 and the spring probes 6, poor contact between the semiconductor chip 1 and the spring probes 6 can be suppressed, thereby improving productivity.

[0040] <Implementation Method 3> use Figure 5 The structure of the semiconductor manufacturing apparatus according to the third embodiment will be described. Figure 5 This is a cross-sectional view showing a semiconductor manufacturing apparatus according to a third embodiment.

[0041] like Figure 5 As shown, the semiconductor manufacturing apparatus according to the third embodiment differs in that the probe 4 of the semiconductor manufacturing apparatus according to the first embodiment or the spring probe 6 of the semiconductor manufacturing apparatus according to the second embodiment is replaced with a wire probe 8. The wire probe 8 can be formed of a conductive material such as tungsten, Gauss steel (SKH), or beryllium copper (Be-Cu), and can be formed into a flexible and elastic wire shape. The outer peripheral surface of the wire probe 8 has an insulating coating covering the conductive material. The insulating coating is formed of an insulator such as a synthetic resin. Alternatively, the insulating coating can be formed by applying an insulating coating on the surface of the conductive material.

[0042] One end of a wire probe 8 contacts the semiconductor chip 1 being inspected, while the other end is secured by a support member (not shown). The support member can be made of any material, as long as it can secure the wire probe 8. Multiple wire probes 8 are arranged on the support member at equal intervals. However, the spacing between the wire probes 8 can be arbitrarily adjusted to suit the size of the semiconductor chip 1.

[0043] Because the wire probe 8 is formed into a relatively thin wire, it can absorb the pressure by bending. In addition, since the probe is relatively thin, the arrangement spacing between the probes can be reduced. Therefore, it is easier to have a structure with multiple needles than the probe 4 and the spring probe 6, and it can handle the inspection of higher currents. In addition, the wire probe 8 can have a shape that can penetrate the dicing tape 2, but the tip can have an R shape. The R shape of the tip can suppress damage to the semiconductor chip 1.

[0044] Figure 6 is a cross-sectional view showing a modified example of the semiconductor manufacturing apparatus according to the third embodiment. Figure 5 In the semiconductor manufacturing apparatus according to the third embodiment, the wire probe 8 is brought into contact with the back surface of the semiconductor chip 1 from a vertical direction. However, in the modified embodiment of the semiconductor manufacturing apparatus according to the third embodiment, as shown in FIG. Figure 6 As shown, the wire probe 8 can be brought into contact with the back surface of the semiconductor chip 1 from an oblique direction. By obliquely inserting the wire probe 8 into the dicing tape 2, the pressing force on the back surface of the chip when the wire probe 8 contacts the semiconductor chip 1 can be reduced, thereby preventing damage to the semiconductor chip 1.

[0045] Figure 7 A diagram illustrating a method for manufacturing a semiconductor device using a modified example of the semiconductor manufacturing apparatus according to the third embodiment. Figure 7 (a) shows an initial state before the wire probe 8 is inserted and brought into contact with the semiconductor chip 1 . Figure 7 (b) shows the state immediately before the wire probe 8 comes into contact with the chip.

[0046] like Figure 7 As shown, after the wire probe 8 is inserted, before the tip of the wire probe 8 contacts the semiconductor chip 1, the portion of the wire probe 8 that is not inserted into the dicing tape 2 is bent, and the insertion angle of the wire probe 8 is changed from the middle of the inside of the dicing tape 2. The insertion angle of the wire probe 8 can be changed in multiple stages, such as Figure 7As shown, for example, just before the wire probe 8 contacts the semiconductor chip 1, the first insertion angle θ1 at which the wire probe 8 is inserted into the dicing tape 2 is set to a second insertion angle θ2, which is smaller than the first insertion angle. Initially, upon insertion into the dicing tape 2, the closer the wire probe 8 is to a perpendicular angle to the extending direction of the dicing tape, the easier it is to insert. That is, the closer θ1 is to 90°, the easier the insertion is; however, this also increases the stress on the back surface of the semiconductor chip 1. Therefore, when the wire probe 8 is partially inserted into the dicing tape 2, the insertion angle of the wire probe 8 is changed to a second insertion angle θ2, which is smaller than the first insertion angle θ1. This facilitates insertion of the wire probe 8 into the dicing tape 2 while reducing the pressure on the back surface of the semiconductor chip 1 and preventing damage to the semiconductor chip 1. Alternatively, an angle adjustment unit (not shown) can be provided to tilt the angle at which the wire probe 8 is inserted into the dicing tape 2. By moving the support member supporting the wire probe 8 by the angle adjustment unit, the insertion angle can be adjusted to any desired angle. In addition, the angle adjustment unit may be any mechanism as long as it can arbitrarily change the insertion angle.

[0047] Although some embodiments of the present disclosure have been described, these embodiments are presented as examples. Various omissions, substitutions, and changes may be made without departing from the scope of the present disclosure. In addition, various embodiments may be combined.

[0048] Hereinafter, various aspects of the present disclosure are collectively described as supplementary notes.

[0049] (Note 1) A semiconductor manufacturing device includes: a platform on which a dicing tape is placed, wherein a plurality of semiconductor chips are attached to the dicing tape; a probe disposed on the platform, inserted into the dicing tape, and electrically connected to the semiconductor chips; and a tester for inspecting the electrical characteristics of the semiconductor chips using the probe. (Note 2) The semiconductor manufacturing apparatus according to Supplementary Note 1, wherein the probe is a wire probe. (Note 3) The semiconductor manufacturing apparatus according to Supplementary Note 1, wherein the probe is a spring probe. (Note 4) The semiconductor manufacturing apparatus according to Supplementary Notes 1 to 3 further comprises an angle adjustment unit that adjusts an insertion angle of the probe inserted into the dicing tape. (Note 5) A method for manufacturing a semiconductor device includes: an insertion step in which a dicing tape with a plurality of semiconductor chips attached thereto is placed on a platform, and a probe disposed on the platform is inserted into the interior of the dicing tape and electrically connected to the semiconductor chips; and an inspection step in which the electrical characteristics of the semiconductor chips are inspected using the probe. (Note 6) The method for manufacturing a semiconductor device according to Supplementary Note 5, wherein, in the inserting step, the probe is inserted into the dicing tape at a first angle formed between the dicing tape and the probe in a cross-sectional view. (Note 7) A method for manufacturing a semiconductor device as described in Note 6, wherein, in the insertion step, after the probe is initially inserted at the first angle, the probe is bent to change the angle formed between the cutting tape and the probe to a second angle that is smaller than the first angle formed between the cutting tape and the probe in a cross-sectional view. (Note 8) The method for manufacturing a semiconductor device according to any one of Supplementary Notes 5 to 7, wherein the dicing tape is made of a material that is hardened by UV irradiation. (Note 9) The method for manufacturing a semiconductor device according to any one of Supplementary Notes 5 to 8, wherein the dicing tape has a conductive adhesive portion, and in the inserting step, the probe comes into contact with the adhesive portion. Description of labels

[0050] 1. Semiconductor chip, 2. Dicing tape, 3. Stage, 4. Probe, 5. Mounting frame, 6. Spring probe, 7. Spring, 8. Wire probe, 9. Conductive adhesive material, 10. Semiconductor wafer.

Claims

1. A semiconductor manufacturing device, characterized in that: include: a platform on which a dicing tape is placed, wherein a plurality of semiconductor chips are attached to the dicing tape; a probe disposed on the platform, inserted into the interior of the dicing tape, and electrically connected to the semiconductor chip; as well as A tester is used to inspect the electrical characteristics of the semiconductor chip through the probe.

2. The semiconductor manufacturing apparatus according to claim 1, wherein The probe is a spring probe.

3. The semiconductor manufacturing apparatus according to claim 1, wherein The probe is a wire probe.

4. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein: An angle adjustment unit is included to adjust an insertion angle of the probe inserted into the interior of the cutting tape.

5. A method for manufacturing a semiconductor device, characterized in that: include: an inserting step in which, while the dicing tape having the plurality of semiconductor chips attached thereto is placed on a stage, a probe provided on the stage is inserted into the interior of the dicing tape and electrically connected to the semiconductor chips; as well as An inspection step in which electrical characteristics of the semiconductor chip are inspected by the probe.

6. The method for manufacturing a semiconductor device according to claim 5, wherein: In the inserting step, the probe is inserted into the dicing tape at a first angle formed between the dicing tape and the probe in a cross-sectional view.

7. The method for manufacturing a semiconductor device according to claim 6, wherein: In the inserting step, after the probe is initially inserted at the first angle, the probe is bent to change the angle formed between the cutting tape and the probe to a second angle smaller than the first angle formed between the cutting tape and the probe in a cross-sectional view.

8. The method for manufacturing a semiconductor device according to any one of claims 5 to 7, wherein: The dicing tape is made of a material that is hardened by UV irradiation.

9. The method for manufacturing a semiconductor device according to any one of claims 5 to 8, wherein: The dicing tape has a conductive adhesive portion, and the probe comes into contact with the adhesive portion during the inserting step.

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