A silicon powder collection and processing device for single-crystal silicon wafer cutting.

Abstract

This invention discloses a silicon powder collection and processing device and method for single-crystal silicon wafer cutting, specifically relating to the field of silicon powder collection devices. The device includes a cutting worktable, a cutting machine, and a silicon powder collection box. The silicon powder collection box is connected to one side of the cutting worktable. A first guide plate bent downwards and a second guide plate bent upwards are respectively installed on the top and bottom inner walls of the cutting worktable. A support frame is fixedly connected inside the silicon powder collection box, and a transmission roller is rotatably connected to the inner wall of the support frame. A rotary motor and a suction pump are respectively connected to both ends of the transmission roller. The suction pump is used to suction the silicon powder generated during the cutting of single-crystal silicon wafers within the cutting worktable. A liquid storage tank and a dust storage tank are fixedly connected to the top and bottom of the silicon powder collection box, respectively, ultimately causing the silicon powder on the dust baffle to fall into the dust storage tank. This solves the problem that workers need to disassemble the silicon powder collection device each time to remove the silicon powder and avoids the problem of the silicon powder being ignited by electrical sparks or heat generated during the cutting process.

Description

Technical Field

[0001] This invention belongs to the technical field of silicon powder collection devices, specifically relating to a silicon powder collection and processing device and method for single-crystal silicon wafer cutting. Background Technology

[0002] Monocrystalline silicon generally refers to a substance in which silicon atoms are arranged in a single configuration. As a relatively reactive non-metallic element crystal, monocrystalline silicon is an important component of crystalline materials and is at the forefront of new material development. The manufacturing process of monocrystalline silicon involves the following steps: quartz sand - metallurgical-grade silicon - purification and refining - deposition of polycrystalline silicon ingots - monocrystalline silicon - silicon wafer cutting. Silicon powder is generated during the cutting process of monocrystalline silicon wafers.

[0003] A silicon powder collection device is a device used to collect and process silicon powder. It is mainly used in the semiconductor, solar cell and other industries to collect silicon powder generated during the cutting of monocrystalline silicon wafers. Silicon powder collection devices generally adopt a closed structure to avoid silicon powder spillage and air pollution. The use of silicon powder collection devices can greatly reduce silicon powder waste and environmental pollution, and improve production efficiency and product quality. When using silicon powder collection devices, attention should be paid to preventing silicon powder leakage and static electricity.

[0004] In existing monocrystalline silicon cutting processes or in the production of metallic silicon, although the silicon powder is collected in a silicon powder collection box, the silicon powder collection device is well-sealed to prevent leakage during collection. Each time the silicon powder is removed, the staff needs to disassemble the silicon powder collection device, which wastes a lot of the staff's time.

[0005] Therefore, in existing technologies such as Chinese utility model CN218014797U, although the silicon powder collection device is too well-sealed and cannot be disassembled, and lacks a silicon powder collection device with enhanced gas circulation, during the silicon powder collection process, the electrical sparks, static electricity, and / or heat generated by cutting can cause the silicon powder to explode, forming an explosion of the silicon powder collection device with oxygen in the air as the combustion-supporting oxygen supply component; even if there are devices that utilize wind power to recover silicon powder, such as Chinese utility models CN205926311U and CN21801479... However, it cannot determine at what extent the silicon powder is collected that there is a risk of explosion. Therefore, it is impossible to guarantee how to control the gas circulation in the silicon powder collection space during the silicon powder collection process. The problem we need to solve is to develop a silicon powder collection and processing device and method for monocrystalline silicon wafer cutting and processing that utilizes the gas density of the mixed silicon powder particles formed by mixing silicon powder and gas within the explosion range and further reduces the floating silicon powder in it, so that the floating silicon powder is also collected together with the non-floating silicon powder, preventing the silicon powder from escaping and making it easy to remove the collected silicon powder. Summary of the Invention

[0006] To address the aforementioned shortcomings, this invention provides a silicon powder collection and processing device and method for monocrystalline silicon wafer cutting. This invention utilizes a microcontroller to control the opening and closing of the cutting machine, suction pump, rotary motor, and top-support cylinder in real time. This allows for the determination of the optimal gas density of the mixed silicon powder particles in the air entering the silicon powder collection box, based on the maximum gas viscosity saturation. When the gas density reaches the detonation threshold, the cutting machine, suction pump, and rotary motor stop operating. Simultaneously, the silicon powder collected by gravity and blocked by the dust baffle in the silicon powder collection box 3 enters the dust storage box. At the same time, the top-support cylinder, controlled by the microcontroller, moves upward, discharging water or liquid carbon dioxide through the drain pipe to absorb heat generated by the cutting machine. This lowers the temperature inside the silicon powder collection box and further collects the floating silicon powder into the dust storage box, preventing the silicon powder collection device from detonating and preventing silicon powder escape, thereby improving the silicon powder collection efficiency.

[0007] This invention provides the following technical solution: a silicon powder collection and processing device for single-crystal silicon wafer cutting, comprising a cutting worktable for placing the single-crystal silicon wafer to be cut, a cutting machine fixed inside the cutting worktable, and a silicon powder collection box with front and rear perforated plates. The silicon powder collection box is connected to the right side of the cutting worktable. A first guide plate bent downwards and a second guide plate bent upwards are respectively provided on the top and bottom inner walls of the cutting worktable. A support frame is provided inside the silicon powder collection box. A drive roller is rotatably connected to the inner wall of the support frame. A rotary motor is rotatably connected to the right end of the drive roller. A suction pump is provided at the left end of the drive roller. When the suction pump is turned on, it is used to suction the silicon powder generated during the cutting of the single-crystal silicon wafer inside the cutting worktable. A liquid storage tank and a dust storage tank are fixedly connected to the top and bottom of the silicon powder collection box, respectively. Temperature sensors, gas density sensors, and ultrasonic sensors are installed at the top and bottom of the silicon powder collection box. Two drain pipes are connected to the bottom of the liquid storage tank. A vent pipe is fixedly connected to the bottom of the top of the silicon powder collection box. A top support cylinder is installed at the bottom of the vent pipe. The cutting machine, the suction pump, the rotary motor, the top support cylinder, the temperature sensor, the gas density sensor, and the ultrasonic sensor are all remotely connected to a microcontroller. The microcontroller is used to control the top support cylinder to move upward and stop the cutting machine, the suction pump, and the rotary motor in real time according to the gas density of the silicon powder mixed with air being drawn into the silicon powder collection box. At the same time, the microcontroller stops the top support cylinder from returning to its initial position when the cutting machine, the suction pump, and the rotary motor are restarted, so as to collect the silicon powder during the single crystal silicon wafer cutting process into the dust storage box.

[0008] Furthermore, the method for real-time control of the top support cylinder, the cutting machine, the suction pump, and the rotary motor by the microcontroller includes the following steps:

[0009] 1) The gas density sensor is used to monitor the real-time density ρ of the silicon powder mixed gas in the silicon powder collection box, the temperature sensor is used to monitor the real-time temperature T of the silicon powder collection box, and the ultrasonic sensor is used to monitor the real-time velocity of the silicon powder mixed gas particles in the air within the polar coordinate system along the r-axis. Real-time motion speed along the θ axis and z-axis real-time motion speed ;

[0010] 2) Construct a gas viscosity saturation model within the silicon powder collection box:

[0011] ;

[0012] in, Let be the real-time velocity vector of the silicon powder mixed gas particles. for The model, , This refers to the viscosity of the silicon powder mixed gas. Here, c is the gradient operator, c is the specific heat capacity of air, and t is the real-time moment of the data acquisition in step 1).

[0013] The model constructed in step 2) is used to determine the maximum silicon powder mixed gas density that would prevent the silicon powder collection box (3) from exploding due to the heat generated by the cutting machine (2) cutting the single crystal silicon wafer and the increase in density. ;

[0014] 3) The maximum silicon powder mixed gas density was obtained by continuously optimizing using the particle swarm optimization algorithm. The i-th maximum silicon powder mixed gas density during particle swarm optimization. The update rate is:

[0015] ;

[0016] in, The maximum density of the silicon powder mixed gas is (i-1). The update rate; As the first learning factor, As the second learning factor, =1.5, =2; N is the maximum silicon powder mixed gas density optimized using the particle swarm optimization algorithm. The number of samples;

[0017] With update speed The updated maximum silicon powder mixed gas density The value is ;

[0018] 4) Construct the optimal value for the maximum silicon powder mixed gas density. particle optimization convergence value Computational model:

[0019] ;

[0020] Where λ is the average of the N largest silicon powder mixed gas densities collected. = ;

[0021] 5) Determine the particle optimization convergence value obtained in step 4). If the value is greater than 0.86, output the optimal value of the maximum silicon powder mixed gas density obtained. Otherwise, repeat steps 1) to 4) to continue the update iteration;

[0022] 6) Determine the optimal value of the maximum silicon powder mixed gas density obtained in step 5). If the value exceeds the critical value of 100 for silicon powder detonation, then control the top support cylinder to open, and simultaneously control the cutting machine, suction pump and rotary motor to stop.

[0023] Furthermore, the viscosity of the silicon powder mixed gas The calculation formula is as follows:

[0024] ;

[0025] Where η is the viscosity coefficient of the silicon powder mixed gas.

[0026] ;

[0027] in, The viscosity coefficient of air at 25℃ =1.85×10 -5 , To monitor the initial temperature inside the silicon powder collection box at the start.

[0028] Furthermore, a dust-collecting fan blade is fixedly connected to the cylindrical outer wall of the transmission roller. A first gear is fixedly connected to the inner end of the transmission roller at the silicon powder collection box. A first rack meshes with the bottom of the first gear. A threaded column is fixedly connected to one side of the first rack. A threaded sleeve is threadedly connected to the outer wall of the threaded column. The threaded sleeve is connected to one side of the silicon powder collection box via a bearing. A second gear is fixedly connected to the outer wall of the threaded sleeve. A second rack meshes with the bottom of the second gear. A movable bracket in a vertical plane is fixedly connected to the bottom of the second rack. A horizontally positioned dust baffle is fixedly connected to one side of the movable bracket. A first spring is fixedly connected to the dust baffle on one side of the vertical plane where the movable bracket is located. A movable ring is fixedly connected to the outer wall of the transmission roller on the side away from the rotating motor. A movable scraper is fixedly connected to the upper part of the outer wall of the movable ring. A cleaning brush is fixedly connected to the side of the movable scraper facing near the dust-collecting fan blade.

[0029] Furthermore, an alarm device is fixedly connected to the inner wall of the dust collection box, and an alarm switch is fixedly connected to the top of the alarm device. A corresponding squeezing column is provided on the top of the alarm switch.

[0030] Furthermore, the inner walls of the front and rear sides of the dust collection box are slidably connected to load-bearing plates, the load-bearing plates are fixedly connected to the top of the corresponding extrusion column, and the bottom of the load-bearing plates are fixedly connected to four second springs, the lower end of each second spring being fixedly connected to the inner wall of the dust collection box.

[0031] Furthermore, the bottom of the liquid storage tank is connected to two drain pipes, the top of the top support cylinder is provided with a circular movable plate, the top of the circular movable plate is fixedly connected to a movable rod, the top of the movable rod is fixedly connected to a movable plate arranged in the front-back direction, the movable rod is located below the midpoint of the movable plate, and a sealing block is fixedly connected to the bottom of the front and rear ends of the movable plate, and each sealing block is slidably connected to the inner wall of the corresponding drain pipe.

[0032] Furthermore, a support base is fixedly connected to the lower top of the rear drain pipe of the silicon powder collection box on the side away from the movable rod. A warning bell is fixedly connected to the bottom of the support base, and a corresponding impact post is provided on the side of the warning bell near the movable rod. A support member is fixedly connected to the inner wall of the drain pipe on the rear side of the silicon powder collection box. A transmission rod is rotatably connected to the inner wall of the support member. Several rotating fan blades are fixedly connected to the top of the transmission rod. Each rotating fan blade is inclined relative to the horizontal plane. A movable extrusion block is fixedly connected to the bottom of the transmission rod. A movable push plate is provided on the side of the movable extrusion block away from the movable rod. The movable push plate is fixedly connected to one end of the corresponding impact post.

[0033] Furthermore, a support plate is fixedly connected to the bottom of the top of the silicon powder collection box between the support base and the drain pipe on the rear side. A third spring is fixedly connected to the bottom of the support plate near the movable push plate, and the other end of the third spring is fixedly connected to one side of the movable push plate.

[0034] The present invention also provides a method for collecting and processing silicon powder for monocrystalline silicon wafer cutting, wherein the method is implemented using the silicon powder collection and processing device for monocrystalline silicon wafer cutting as described above, and the method includes the following steps:

[0035] S1. The microcontroller controls the rotary motor and the suction pump to start. The rotary motor drives the transmission roller to rotate, which in turn drives the dust baffle to move closer to the cutting workbench, and finally completely covers the upper part of the dust storage box.

[0036] S2. The suction pump simultaneously draws in the silicon powder generated by the cutting machine from the monocrystalline silicon wafer, and the powder enters the silicon powder collection box through the guidance of the first guide plate and the second guide plate.

[0037] S3. The microcontroller, based on data collected in real time by the temperature sensor, the gas density sensor, and the ultrasonic sensor, determines whether the gas density of the silicon powder mixed with air in the silicon powder collection box, which is being pumped into the silicon powder collection box by the suction pump, is greater than the critical value for silicon powder detonation. If it is greater, the microcontroller controls the cutting machine, the suction pump, and the rotary motor to stop working, and the dust baffle returns to its initial position, allowing the collected silicon powder to fall into the dust storage box. Simultaneously, the microcontroller controls the top support cylinder to move upward, and the liquid in the liquid storage tank falls from top to bottom through the two drain pipes, removing the floating silicon powder remaining in the air in the silicon powder collection box.

[0038] S4. Restart the cutting machine, the suction pump, and the rotary motor, and control the top support cylinder to return to its initial position.

[0039] The beneficial effects of this invention are as follows:

[0040] 1. This invention utilizes a microcontroller to control the opening and closing of the cutting machine, suction pump, rotary motor, and top support cylinder in real time. This allows for the determination of the optimal gas density of the mixed silicon powder particles in the air entering the silicon powder collection box, based on the maximum gas viscosity saturation. When the gas density reaches the detonation threshold, the cutting machine, suction pump, and rotary motor stop operating. Simultaneously, the silicon powder collected by gravity and blocked by the dust baffle in the silicon powder collection box 3 enters the dust storage box. At the same time, the top support cylinder, controlled by the microcontroller, moves upwards, discharging water or liquid carbon dioxide through the drain pipe to absorb heat generated by the cutting machine. This lowers the temperature inside the silicon powder collection box and further collects the floating silicon powder into the dust storage box. This prevents the silicon powder collection device from detonating and avoids silicon powder escape, thereby improving the silicon powder collection efficiency.

[0041] 2. The microcontroller in the silicon powder collection and processing device for single-crystal silicon wafer cutting provided by this invention, when controlling the gas density of the mixed silicon powder particles gas containing silicon powder entering it, first constructs a gas viscosity saturation model: It fully considers the real-time motion speed of gas particles and the viscosity of the silicon powder mixed gas caused by friction from collisions between them. This allows us to determine the maximum density of the silicon powder mixture when the gas viscosity reaches its maximum saturation, and to determine whether it exceeds the critical value for silicon powder detonation. If the gas density is too high, there is a risk of detonation. Therefore, the microcontroller controls the cutting machine, suction pump, and rotary motor to stop moving, thus effectively preventing the silicon powder collection device from being detonated.

[0042] 3. In determining the optimal gas density of the mixed silicon powder particles when gas viscosity saturation reaches its maximum, this invention employs a particle swarm optimization algorithm. The optimal gas density of the mixed silicon powder particles obtained from the constructed gas viscosity saturation model is collected to form a sample dataset of N samples, and the i-th sample (i.e., the i-th maximum silicon powder mixed gas density) is constructed. The updated iterative model is used to determine the optimal value of the maximum silicon powder mixed gas density. particle optimization convergence value The computational model is then trained on the dataset. In subsequent calculations based on real-time collected data and the constructed gas viscosity saturation model, the accuracy and precision of the calculations are improved, thereby avoiding microcontroller control errors.

[0043] 4. This invention, by incorporating a threaded rotating sleeve and a dust baffle, allows for efficient collection of silicon powder. During collection, the transmission roller drives the first gear to mesh with the first rack, which in turn drives the threaded column to rotate the threaded rotating sleeve. The threaded rotating sleeve then drives the second gear to mesh with the second rack, which in turn drives the movable bracket to move the dust baffle. All the silicon powder in the collection box falls onto the dust baffle. After cutting, the first spring resets the dust baffle, allowing the silicon powder on it to fall into the dust storage box. This facilitates the collection and organization of silicon powder by workers and solves the problem of having to disassemble the silicon powder collection device each time to remove the powder.

[0044] 5. This invention incorporates a top-support cylinder and a sealing block. When the density of the silicon powder mixture in the silicon powder collection box reaches the critical value for silicon powder detonation, the microcontroller controls the top-support cylinder to move upwards. The top-support cylinder then squeezes the circular movable plate, which in turn moves the movable rod. The movable rod then moves the movable plate, which in turn moves the sealing block. This prevents the drain pipe from becoming blocked, allowing the drain pipe to discharge water or liquid carbon dioxide from the storage tank into the silicon powder collection box for heat absorption and cooling, while simultaneously collecting the floating silicon powder into the dust collection box. Attached Figure Description

[0045] The invention will now be described in more detail with reference to embodiments and the accompanying drawings.

[0046] Figure 1 This is a schematic diagram of the overall structure of the present invention.

[0047] Figure 2 This is a cross-sectional view of the dust collection box structure of the present invention.

[0048] Figure 3 For the present invention Figure 2 Enlarged view of the structure of part A.

[0049] Figure 4 For the present invention Figure 2 Enlarged view of the structure of part B.

[0050] Figure 5 This is a cross-sectional view of the silicon powder collection box structure of the present invention.

[0051] Figure 6 For the present invention Figure 5 Enlarged view of the C-section structure.

[0052] Figure 7 For the present invention Figure 5 Enlarged view of the structure of part D.

[0053] Figure 8 This is a cross-sectional view of the liquid storage tank structure of the present invention.

[0054] Figure 9 For the present invention Figure 8 Enlarged view of the E-section structure.

[0055] Figure 10 For the present invention Figure 8 Enlarged view of the F-section structure.

[0056] Figure 11 This is a flowchart of the method for controlling a cutting machine, a suction pump, a rotary motor, and a top support cylinder using a microcontroller according to the present invention.

[0057] The attached figures are labeled as follows: 1. Cutting worktable; 101. First guide plate; 102. Second guide plate; 2. Cutting machine; 3. Silicon powder collection box; 4. Support frame; 5. Transmission roller; 501. Suction pump; 6. Rotary motor; 7. Dust collection fan blade; 8. First gear; 9. First rack; 10. Threaded column; 11. Threaded sleeve; 12. Second gear; 13. Second rack; 14. Movable bracket; 15. Dust baffle; 16. First spring; 17. Dust collection box; 18. Movable ring; 19. Movable scraper; 20. Cleaning brush; 21. Alarm device. 22. Alarm switch; 23. Corresponding squeezing column; 24. Load-bearing plate; 25. Second spring; 26. Liquid storage tank; 27. Drain pipe; 28. Vent pipe; 29. ​​Top support cylinder; 30. Circular movable plate; 301. Hollowed-out plate; 302. Right side plate; 31. Movable rod; 32. Movable plate; 33. Sealing block; 34. Support base; 35. Warning bell; 36. Corresponding impact column; 37. Support component; 38. Transmission rod; 39. Rotating fan blade; 40. Movable squeezing block; 41. Movable push plate; 42. Support plate; 43. Third spring. Detailed Implementation

[0058] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0059] like Figure 1-10As shown, the silicon powder collection and processing device for single-crystal silicon wafer cutting provided by the present invention includes a cutting worktable 1 for placing the single-crystal silicon wafer to be cut, a cutting machine 2 fixed inside the cutting worktable 1, and a silicon powder collection box 3 with front and rear perforated plates. The silicon powder collection box 3 is connected to the right side of the cutting worktable 1. The top and bottom inner walls of the cutting worktable 1 are respectively provided with a downwardly bent first guide plate 101 and an upwardly bent second guide plate 102. The arched bending surfaces of the first guide plate 101 and the second guide plate 102 both face towards the inner wall of the cutting worktable 1. Towards the cutting worktable 1, a channel for guiding the silicon powder during cutting is formed. Inside the silicon powder collection box 3, a support frame 4 is installed. The support frame 4 is horizontally fixed between the hollow plate 301 in the middle of the silicon powder collection box 3 and the right side plate 302 with multiple parallel and equally spaced slits on the right side. A drive roller 5 arranged in a left-right direction is rotatably connected to the inner wall of the support frame 4. A rotary motor 6 is rotatably connected to the right end of the drive roller 5. The rotary motor 6 is an HG-JR2034 series servo rotary motor. A suction pump is installed at the left end of the drive roller 5. 501, when activated, the suction pump 501 is used to suction the silicon powder generated during the cutting of single-crystal silicon wafers within the cutting workbench 1. The top and bottom of the silicon powder collection box 3 are respectively fixedly connected to a liquid storage tank 26 and a dust collection box 17. Temperature sensors, gas density sensors, and ultrasonic sensors are installed at the top and bottom of the silicon powder collection box 3. Two drain pipes 27 are connected to the bottom of the liquid storage tank 26. A vent pipe 28 is fixedly connected to the lower top of the silicon powder collection box 3. A top support cylinder 29 is installed at the bottom of the vent pipe 28. The cutting machine 2, suction pump 501, and rotary... The rotary motor 6, the top support cylinder 29, the temperature sensor, the gas density sensor, and the ultrasonic sensor are all remotely connected to the microcontroller. The microcontroller controls the top support cylinder 29 to move upward and stop the cutting machine 2, the suction pump 501, and the rotary motor 6 in real time according to the gas density of the silicon powder mixed with air being drawn into the silicon powder collection box 3. It also stops the top support cylinder 29 from returning to its initial position when the cutting machine 2, the suction pump 501, and the rotary motor 6 are restarted, so as to collect the silicon powder during the single crystal silicon wafer cutting process into the dust storage box 17.

[0060] The dust collection box 17 is located below the silicon powder collection box 3, between the left side of the perforated plate 301 and the right end of the cutting table 1. The first guide plate 101 and the second guide plate 102 extend from the right end of the cutting table 1 in an arc-shaped trajectory to the top plate of the silicon powder collection box 3 and the upper vertical space of the dust collection box 17. The dust baffle 15 is located on the upper part of the dust collection box 17, and its area matches the upper surface of the dust collection box 17. Therefore, when pushed to the upper part of the dust collection box 17, it can gradually cover and completely prevent dust from being absorbed by the silicon powder. The sucked-in silicon powder falls into the dust collection box 17. Once full, it falls into the dust collection box 17. The microcontroller uses data collected by various sensors to determine the gas density of the air mixed with silicon powder in the silicon powder collection box 3. This prevents an explosion caused by the heat and / or electrical sparks generated by the cutting machine 2 cutting the monocrystalline silicon wafers, which could occur if the gas density of the air mixed with silicon powder in the silicon powder collection box 3 reaches a certain level. Therefore, the gas density of the air mixed with silicon powder that reaches the silicon powder detonation threshold is 100 g / m³. 3 At this time, the microcontroller will control the cutting machine 2, the suction pump 501 and the rotary motor 6 to stop moving, and control the top support cylinder 29 to open and move upward, so that the liquid in the liquid storage tank 26 is discharged from the two drain pipes 27. Then, the silicon powder sucked by the suction pump 501 falls into the dust storage box 17 due to gravity. The liquid discharged by the drain pipe 27 further removes the floating silicon powder in the silicon powder collection box 3, achieving the technical effect of thoroughly removing and collecting silicon powder. This avoids the production safety accident caused by the silicon powder reaching a certain density and concentration in the silicon powder collection box 3 and being ignited by the electric sparks and / or heat generated by cutting.

[0061] As a preferred embodiment of the present invention, such as Figure 11 The flowchart shown is a process for collecting silicon powder from the single-crystal silicon wafer cutting process into the dust collection box 17 by simultaneously opening and stopping the rotating motor 6 and restarting the top support cylinder 29, as provided by the present invention. To improve the accuracy of the timing of the microcontroller's control over the stopping of the cutting machine 2, the suction pump 501, and the rotating motor, it is necessary to monitor the density of the air mixed with silicon powder in the silicon powder collection box 3 in real time. This ensures that the air does not become saturated due to excessive silicon powder concentration, which would affect the gas flow rate and further reduce the temperature required for detonation. Therefore, the microcontroller-controlled opening and closing method for the top support cylinder 29, the cutting machine 2, the suction pump 501, and the rotating motor 6 provided by the present invention includes the following steps:

[0062] 1) A gas density sensor is used to monitor the real-time density ρ of the silicon powder mixed gas in the silicon powder collection box 3; a temperature sensor is used to monitor the real-time temperature T of the silicon powder collection box 3; and an ultrasonic sensor is used to monitor the real-time velocity of the silicon powder mixed gas particles in the air within the polar coordinate system along the r-axis. Real-time motion speed along the θ axis and z-axis real-time motion speed ;

[0063] 2) Construct a gas viscosity saturation model within the silicon powder collection box 3:

[0064] ;

[0065] in, Let be the real-time velocity vector of the silicon powder mixed gas particles. for The model, , This refers to the viscosity of the silicon powder mixed gas. Here, c is the gradient operator, c is the specific heat capacity of air, t is the real-time moment of data acquisition in step 1), that is, the real-time density ρ of the silicon powder mixed gas acquired in step 1) is ρ(t), the real-time density ρ of the silicon powder mixed gas obtained by various corresponding sensors in step 1) is ρ(t), the real-time temperature T of the silicon powder collection box 3 is T(t), and the real-time velocity of the silicon powder mixed gas particles in the polar coordinate system along the r-axis is... That is Real-time motion velocity along the θ axis That is z-axis real-time motion speed That is ;

[0066] Step 2) The constructed model is used to determine the maximum density of the silicon powder mixture gas, which contains silicon powder, drawn into the silicon powder collection box 3 by the suction pump 501, and which, under the condition that the gas density gradually increases, and then the heat is transferred from the cutting machine 2 to the silicon wafer, prevents the silicon powder collection box 3 from exploding due to the heat generated by the cutting machine 2 and the increase in density. ;

[0067] 3) The maximum silicon powder mixed gas density was obtained by continuously optimizing using the particle swarm optimization algorithm. The i-th maximum silicon powder mixed gas density during particle swarm optimization. The update rate is:

[0068] ;

[0069] in, The maximum density of the silicon powder mixed gas is (i-1). The update rate; As the first learning factor, As the second learning factor, =1.5, =2; N is the maximum silicon powder mixed gas density optimized using the particle swarm optimization algorithm. The number of samples;

[0070] With update speed The updated maximum silicon powder mixed gas density The value is ;

[0071] 4) Construct the optimal value for the maximum silicon powder mixed gas density. particle optimization convergence value Computational model:

[0072] ;

[0073] Where λ is the average of the N largest silicon powder mixed gas densities collected. = ;

[0074] 5) Determine the particle optimization convergence value obtained in step 4). If the value is greater than 0.86, output the optimal value of the maximum silicon powder mixed gas density obtained. Otherwise, repeat steps 1) to 4) to continue the update iteration;

[0075] 6) Determine the optimal value of the maximum silicon powder mixed gas density obtained in step 5). Is it greater than the critical value for silicon powder detonation of 100, in g / m³? 3 If so, the top support cylinder 29 is opened, and the cutting machine 2, suction pump 501 and rotary motor 6 are stopped at the same time.

[0076] More preferably, the viscosity of the silicon powder mixed gas... The calculation formula is as follows:

[0077] ;

[0078] Where η is the viscosity coefficient of the silicon powder mixed gas.

[0079] ;

[0080] in, The viscosity coefficient of air at 25℃ =1.85×10 -5, To monitor the initial temperature inside the silicon powder collection box 3 at the start.

[0081] In another preferred embodiment of the present invention, a dust collecting fan blade 7 is fixedly connected to the cylindrical outer wall of the transmission roller 5. A first gear 8 is fixedly connected to the inner end of the transmission roller 5 in the silicon powder collecting box 3. A first rack 9 arranged in a front-rear direction meshes with the bottom of the first gear 8. A threaded column 10 is fixedly connected to one side of the first rack 9. A threaded sleeve 11 is threadedly connected to the outer wall of the threaded column 10. The threaded sleeve 11 is connected to one side of the silicon powder collecting box 3 through a bearing. A second gear 12 is fixedly connected to the outer wall of the threaded sleeve 11. Figure 6 As shown, the bottom of the second gear 12 is engaged with the second rack 13. The second gear 12 is located on the rear vertical plate of the silicon powder collection box 3. The first rack 9 is located on the outer wall of the rear vertical plate of the silicon powder collection box 3 and is arranged in the left-right direction. The bottom of the second rack 13 is fixedly connected to a movable bracket 14 in the vertical plane. A dust baffle 15 is fixedly connected to one side of the movable bracket 14. A first spring 16 is fixedly connected to one side of the dust baffle 15 in the vertical plane where the movable bracket 14 is located. The first spring 16 is arranged in the left-right direction in the plane behind the silicon powder collection box 3 where the movable bracket 14 is located. A movable ring 18 is fixedly connected to the outer wall of the transmission roller 5 on the side away from the rotating motor 6. A movable scraper 19 is fixedly connected to the upper part of the outer wall of the movable ring 18. A cleaning brush 20 is fixedly connected to the side of the movable scraper 19 facing the dust collection fan blade 7.

[0082] It should be noted that, during the cutting of monocrystalline silicon wafers, while the microcontroller controls the cutting machine 2 to cut the wafers, the rotary motor 6 is turned on. The rotary motor 6, through the transmission roller 5, causes the dust collecting fan blades 7 to rotate. The dust collecting fan blades 7, in conjunction with the suction pump 501, generate suction to draw silicon powder into the silicon powder collection box 3. This prevents silicon powder that escaped from being drawn in by the suction of the suction pump 501 and remained on the left side of the hollow plate 301 in the middle of the silicon powder collection box 3 from being retained in the silicon powder collection box 3 by the suction force generated by the dust collecting fan blades 7. Therefore, the dust collecting fan blades 7 improve the silicon powder collection effect and prevent excessive silicon powder from escaping. At the same time, the transmission roller 5 drives the first gear 8 to rotate, and the first gear 8 meshes with the first rack 9. The first rack 9 then drives the threaded column 10 to move, and the threaded column 10 rotates through the thread. When sleeve 11 rotates, the threaded sleeve 11 drives the second gear 12 to rotate, the second gear 12 meshes with the second rack 13, the second rack 13 drives the movable bracket 14 to move, and the movable bracket 14 drives the dust baffle 15 to move. The silicon powder in the silicon powder collection box 3 will fall onto the dust baffle 15. When the cutting is completed or during the cutting process, the operator turns off the rotary motor 6, or when the microcontroller determines, based on the collected data, that the gas density of the air mixed with silicon powder in the silicon powder collection box 3 has reached the critical value for silicon powder detonation, the rotary motor 6 is stopped. When the rotary motor 6 stops, the first spring 16 will reset the dust baffle 15, and the silicon powder on the dust baffle 15 will fall into the dust storage box 17, thus facilitating the collection and sorting of silicon powder by the operator and solving the problem that the operator has to disassemble the silicon powder collection device to take out the silicon powder each time.

[0083] Furthermore, such as Figure 3 As shown, an alarm device 21 is fixedly connected to the inner wall of the dust collection box 17. The alarm device 21 is an SCDC0940 series passive buzzer alarm device. An alarm switch 22 is fixedly connected to the top of the alarm device 21. A corresponding extrusion column 23 is provided on the top of the alarm switch 22. A load-bearing plate 24 is slidably connected to the inner walls of the front and rear sides of the dust collection box 17. The load-bearing plate 24 is fixedly connected to the top of the corresponding extrusion column 23. Four second springs 25 are fixedly connected to the bottom of the load-bearing plate 24. A second spring 25 is provided at the lower left and right ends of the front side of the load-bearing plate 24, and a second spring 25 is also provided at the lower left and right ends of the rear side. The lower end of each second spring 25 is fixedly connected to the inner wall of the dust collection box 17.

[0084] It should be noted that when the silicon powder in the dust collection box 17 is almost full, the load-bearing plate 24 will move downward due to the weight of the large amount of silicon powder. The load-bearing plate 24 will drive the corresponding extrusion column 23 to move, and the corresponding extrusion column 23 will squeeze the alarm switch 22 to open the alarm device 21. The alarm device 21 will then sound to remind the staff to take out the silicon powder in the dust collection box 17.

[0085] More preferably, the alarm switch 22 and the alarm device 21 are also remotely connected to the microcontroller.

[0086] Furthermore, such as Figure 1 As shown, the bottom of the storage tank 26 is connected to two drain pipes 27. It should be noted that the storage tank 26 can store room temperature water, which can be used to remove floating silicon powder in the silicon powder collection box 3 that cannot fall due to gravity. Alternatively, the storage tank 26 can also store liquid carbon dioxide, in which case a refrigeration device or a cold insulation device can be added to the outside of the storage tank 26. When the liquid carbon dioxide is discharged from the drain pipe 27 into the silicon powder collection box 3 from top to bottom, it can not only absorb the heat generated by the cutting machine 2 cutting the monocrystalline silicon wafer due to heat exchange, but also change from liquid to gaseous based on heat exchange. This further increases the gas volume in the silicon powder collection box 3 from top to bottom along with the liquid. The carbon dioxide is continuously released and gradually increases. Therefore, the carbon dioxide that is converted into gaseous state after liquid heat absorption can also cause the floating silicon powder to be "pressed" into the dust storage box 17. The top of the top support cylinder 29 is provided with a circular movable plate 30. The area of ​​the circular movable plate 30 is the same as the area of ​​the cylindrical circular cross-section of the vent pipe 28. The top of the circular movable plate 30 is fixedly connected to a movable rod 31. The top of the movable rod 31 is fixedly connected to a movable plate 32 arranged in the front and back direction. The movable rod 31 is located at the lower part of the midpoint of the movable plate 32. A sealing block 33 is fixedly connected to the bottom of the front and rear ends of the movable plate 32. Each sealing block 33 is slidably connected to the inner wall of the corresponding drain pipe 27.

[0087] It should be noted that when the gas density of the air mixed with silicon powder in the silicon powder collection box 3 reaches the critical value for silicon powder detonation, under the control of the microcontroller, the top support cylinder 29 will move upward to squeeze the circular movable plate 30. The circular movable plate 30 will drive the movable rod 31 to move, the movable rod 31 will drive the movable plate 32 to move, and the movable plate 32 will drive the sealing block 33 to move. In this way, the drain pipe 27 will no longer be blocked. The drain pipe 27 will discharge the liquid carbon dioxide in the liquid storage tank 26 into the silicon powder collection box 3 for heat exchange to absorb the excess heat generated by cutting, while further "pressing" the floating silicon powder into the dust storage box 17.

[0088] As another preferred embodiment of the present invention, such as Figure 9As shown, a support base 34 is fixedly connected to the top lower end of the drain pipe 27 on the rear side of the silicon powder collection box 3, away from the movable rod 31. A warning bell 35 is fixedly connected to the bottom of the support base 34. A corresponding impact post 36 is provided on the side of the warning bell 35 near the movable rod 31. A support member 37 is fixedly connected to the inner wall of the drain pipe 27 on the rear side of the silicon powder collection box 3. A transmission rod 38 is rotatably connected to the inner wall of the support member 37. Several rotating fan blades 39 are fixedly connected to the top of the transmission rod 38. Each rotating fan blade 39 is inclined relative to the horizontal plane. A movable extrusion block 40 is fixedly connected to the bottom of the transmission rod 38. A movable push plate 41 is provided on the side of the movable extrusion block 40 away from the movable rod 31. The movable push plate 41 is fixedly connected to one end of the corresponding impact post 36. A support plate 42 is fixedly connected between the bottom of the top of the silicon powder collection box 3 and the support base 34 and the drain pipe 27 on the rear side. A third spring 43 is fixedly connected to the bottom of the support plate 42 near the movable push plate 41. The other end of the third spring 43 is fixedly connected to one side of the movable push plate 41.

[0089] It should be noted that when the gas density of the air mixed with silicon powder in the silicon powder collection box 3 reaches the critical value for silicon powder detonation, under the control of the microcontroller, the top support cylinder 29 will cause the liquid carbon dioxide in the liquid storage tank 26 to be released. The liquid carbon dioxide will impact the rotating fan blade 39, causing the rotating fan blade 39 to rotate. The rotating fan blade 39 will then drive the transmission rod 38 to rotate, which in turn will drive the movable extrusion block 40 to rotate. The movable extrusion block 40 will then squeeze the movable push plate 41, which will then drive the corresponding impact post 36 to move. After the movable push plate 41 has moved, it will be reset by the third spring 43. The movable push plate 41 will continuously drive the corresponding impact post 36 to strike the warning bell 35, which will continuously emit a sound to remind the surrounding personnel and prevent them from approaching the silicon powder collection box 3.

[0090] The present invention also provides a method for collecting and processing silicon powder for monocrystalline silicon wafer cutting, the method being implemented using the silicon powder collection and processing device for monocrystalline silicon wafer cutting as provided in any of the above embodiments, the method comprising the following steps:

[0091] S1. The microcontroller controls the rotary motor 6 and the suction pump 501 to start. The rotary motor 6 drives the transmission roller 5 to rotate, which in turn drives the dust baffle 15 to move closer to the cutting worktable 1, and finally completely covers the upper part of the dust storage box 17.

[0092] S2, the suction pump 501 simultaneously suctions the silicon powder generated by the cutting machine 2 cutting the monocrystalline silicon wafer, and guides it into the silicon powder collection box 3 through the first guide plate 101 and the second guide plate 102.

[0093] S3. Based on the data collected in real time by the temperature sensor, gas density sensor, and ultrasonic sensor, the microcontroller determines whether the gas density of the silicon powder mixed with air in the silicon powder collection box 3 is greater than the critical value for silicon powder ignition. If it is greater, the microcontroller controls the cutting machine 2, the suction pump 501, and the rotary motor 6 to stop working, and the dust baffle 15 returns to its initial position. The collected silicon powder is collected by the dust baffle 15 and falls into the dust storage box 17. At the same time, the microcontroller controls the top support cylinder 29 to move upward, and the liquid in the liquid storage tank 26 falls from top to bottom through the two drain pipes 27 to remove the floating silicon powder remaining in the air in the silicon powder collection box 3.

[0094] S4. Restart the cutting machine 2, suction pump 501 and rotary motor 6 and control the top support cylinder 29 to return to the initial position.

[0095] Finally, the following points should be noted: First, in the description of this application, it should be noted that, unless otherwise specified and limited, the terms "installation", "connection", and "linkage" should be interpreted broadly, and can be mechanical or electrical connections, or internal connections between two components, or direct connections. "Up", "down", "left", "right", etc. are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may change.

[0096] Secondly: The accompanying drawings of the embodiments disclosed in this invention only involve the structures involved in the embodiments disclosed in this invention. Other structures can refer to the general design. In the absence of conflict, the same embodiment and different embodiments of this invention can be combined with each other.

[0097] In conclusion, the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A silicon powder collection and processing device for single-crystal silicon wafer cutting, comprising a cutting worktable (1) for placing the single-crystal silicon wafer to be cut, a cutting machine (2) fixed inside the cutting worktable (1), and a silicon powder collection box (3) with front and rear perforated plates, wherein the silicon powder collection box (3) is connected to the right side of the cutting worktable (1), characterized in that, The cutting workbench (1) is provided with a first guide plate (101) bent downwards and a second guide plate (102) bent upwards on the inner walls of the top and bottom, respectively. The silicon powder collection box (3) is provided with a support frame (4). The inner wall of the support frame (4) is rotatably connected to a transmission roller (5). The right end of the transmission roller (5) is rotatably connected to a rotary motor (6). The left end of the transmission roller (5) is provided with a suction pump (501). When the suction pump (501) is turned on, it is used to suction the silicon powder generated by cutting single crystal silicon wafers in the cutting workbench (1). The top and bottom of the silicon powder collection box (3) are fixedly connected to a liquid storage tank (26) and a dust storage tank (17), respectively. The top and bottom of the silicon powder collection box (3) are provided with a temperature sensor, a gas density sensor and an ultrasonic sensor. The bottom of the liquid storage tank (26) is connected to two drain pipes (27). The top and lower end of the silicon powder collection box (3) is fixedly connected to a vent pipe (28). The bottom of the vent pipe (28) is provided with a top support cylinder (29). The cutting machine (2), the suction pump (501), the rotary motor (6), the top support cylinder (29), the temperature sensor, the gas density sensor, and the ultrasonic sensor are all remotely connected to the microcontroller. The microcontroller is used to control the top support cylinder (29) to move upward in real time according to the gas density of the silicon powder mixed air in the silicon powder collection box (3) and to stop the cutting machine (2), the suction pump (501), and the rotary motor (6). At the same time as the cutting machine (2), the suction pump (501), and the rotary motor (6) are restarted, the top support cylinder (29) is stopped from returning to the initial position so as to collect the silicon powder during the single crystal silicon wafer cutting process into the dust storage box (17). The method for real-time control of the opening and closing of the single-chip microcomputer over the top support cylinder (29), the cutting machine (2), the suction pump (501), and the rotary motor (6) includes the following steps: 1) The gas density sensor is used to monitor the real-time density ρ of the silicon powder mixed gas in the silicon powder collection box (3), the temperature sensor is used to monitor the real-time temperature T of the silicon powder collection box (3), and the ultrasonic sensor is used to monitor the real-time velocity of the silicon powder mixed gas particles in the polar coordinate system along the r-axis. Real-time motion speed along the θ axis and z-axis real-time motion speed ; 2) Construct a gas viscosity saturation model within the silicon powder collection box (3): ； in, Let be the real-time velocity vector of the silicon powder mixed gas particles. for The model, , This refers to the viscosity of the silicon powder mixed gas. Here, c is the gradient operator, c is the specific heat capacity of air, and t is the real-time moment of the data acquisition in step 1). The model constructed in step 2) is used to determine the maximum silicon powder mixed gas density that would prevent the silicon powder collection box (3) from exploding due to the heat generated by the cutting machine (2) cutting the single crystal silicon wafer and the increase in density. ; 3) The maximum silicon powder mixed gas density was obtained by continuously optimizing using the particle swarm optimization algorithm. The i-th maximum silicon powder mixed gas density during particle swarm optimization. The update rate is: ； in, The maximum density of the silicon powder mixed gas is (i-1). The update rate; As the first learning factor, As the second learning factor, =1.5, =2; N is the maximum silicon powder mixed gas density optimized using the particle swarm optimization algorithm. The number of samples; With update speed The updated maximum silicon powder mixed gas density The value is ; 4) Construct the optimal value for the maximum silicon powder mixed gas density. particle optimization convergence value Computational model: ； Where λ is the average of the N largest silicon powder mixed gas densities collected. = ; 5) Determine the particle optimization convergence value obtained in step 4). If the value is greater than 0.86, output the optimal value of the maximum silicon powder mixed gas density obtained. Otherwise, repeat steps 1) to 4) to continue the update iteration; 6) Determine the optimal value of the maximum silicon powder mixed gas density obtained in step 5). If the value exceeds the critical value of silicon powder detonation of 100, then control the top support cylinder (29) to open, and simultaneously control the cutting machine (2), suction pump (501) and rotary motor (6) to stop.

2. The silicon powder collection and processing device for single-crystal silicon wafer cutting according to claim 1, characterized in that, The viscosity of the silicon powder mixed gas The calculation formula is as follows: ； Where η is the viscosity coefficient of the silicon powder mixed gas. ； in, The viscosity coefficient of air at 25℃ =1.85×10 -5 , To monitor the initial temperature inside the silicon powder collection box (3) at the start.

3. The silicon powder collection and processing device for single-crystal silicon wafer cutting according to claim 1, characterized in that, The cylindrical outer wall of the transmission roller (5) is fixedly connected to a dust collection fan blade (7). The transmission roller (5) is fixedly connected to a first gear (8) at the inner end of the silicon powder collection box (3). The bottom of the first gear (8) is meshed with a first rack (9). A threaded column (10) is fixedly connected to one side of the first rack (9). The outer wall of the threaded column (10) is connected to a threaded sleeve (11) by a thread. The threaded sleeve (11) is connected to one side of the silicon powder collection box (3) by a bearing. The outer wall of the threaded sleeve (11) is fixedly connected to a second gear (12). The bottom of the second gear (12) is meshed with a second rack (13). The bottom of the second rack (13) is fixedly connected to a movable bracket (14) in a vertical plane. A dust baffle (15) in a horizontal position is fixedly connected to one side of the movable bracket (14). A first spring (16) is fixedly connected to one side of the dust baffle (15) in the vertical plane of the movable bracket (14). A movable ring (18) is fixedly connected to the outer wall of the transmission roller (5) away from the rotary motor (6). A movable scraper (19) is fixedly connected to the upper part of the outer wall of the movable ring (18). A cleaning brush (20) is fixedly connected to the side of the movable scraper (19) facing the dust collection fan blade (7).

4. The silicon powder collection and processing device for single-crystal silicon wafer cutting according to claim 1, characterized in that, An alarm device (21) is fixedly connected to the inner wall of the dust collection box (17), and an alarm switch (22) is fixedly connected to the top of the alarm device (21). A corresponding compression column (23) is provided on the top of the alarm switch (22).

5. The silicon powder collection and processing device for single-crystal silicon wafer cutting according to claim 1, characterized in that, The inner walls of the front and rear sides of the dust collection box (17) are slidably connected with load-bearing plates (24). The load-bearing plates (24) are fixedly connected to the top of the corresponding extrusion column (23). The bottom of the load-bearing plates (24) is fixedly connected with four second springs (25). The lower end of each second spring (25) is fixedly connected to the inner wall of the dust collection box (17).

6. The silicon powder collection and processing device for single-crystal silicon wafer cutting according to claim 1, characterized in that, The bottom of the liquid storage tank (26) is connected to two drain pipes (27). The top of the top support cylinder (29) is provided with a circular movable plate (30). The top of the circular movable plate (30) is fixedly connected to a movable rod (31). The top of the movable rod (31) is fixedly connected to a movable plate (32) arranged in the front-back direction. The movable rod (31) is located at the lower part of the midpoint of the movable plate (32). The bottom of the front end and the rear end of the movable plate (32) are both fixedly connected to a sealing block (33). Each sealing block (33) is slidably connected to the inner wall of the corresponding drain pipe (27).

7. The silicon powder collection and processing device for single-crystal silicon wafer cutting according to claim 6, characterized in that, The silicon powder collection box (3) has a support base (34) fixedly connected to the lower top of the drain pipe (27) on the side away from the movable rod (31) on the rear side. The bottom of the support base (34) is fixedly connected to an alarm bell (35). The alarm bell (35) is provided with a corresponding impact post (36) on the side near the movable rod (31). The inner wall of the drain pipe (27) on the rear side of the silicon powder collection box (3) is fixedly connected to a support member (37). The inner wall of the support member (37) is rotatably connected to a transmission rod (38). The top of the transmission rod (38) is fixedly connected to several rotating fan blades (39). Each rotating fan blade (39) is inclined relative to the horizontal plane. The bottom of the transmission rod (38) is fixedly connected to a movable extrusion block (40). The side of the movable extrusion block (40) away from the movable rod (31) is provided with a movable push plate (41). The movable push plate (41) is fixedly connected to one end of the corresponding impact post (36).

8. The silicon powder collection and processing device for single-crystal silicon wafer cutting according to claim 7, characterized in that, The bottom of the silicon powder collection box (3) is fixedly connected to a support plate (42) between the support base (34) and the drain pipe (27) on the rear side. A third spring (43) is fixedly connected to the bottom of the support plate (42) near the movable push plate (41). The other end of the third spring (43) is fixedly connected to one side of the movable push plate (41).

9. A method for collecting and processing silicon powder used in the cutting and processing of single-crystal silicon wafers, characterized in that, The processing method is implemented using the silicon powder collection and processing device for monocrystalline silicon wafer cutting as described in any one of claims 1-8, and the method includes the following steps: S1. The microcontroller controls the rotary motor (6) and the suction pump (501) to start. The rotary motor (6) drives the transmission roller (5) to rotate, which in turn drives the dust baffle (15) to move closer to the cutting workbench (1) and finally completely covers the upper part of the dust storage box (17). S2. The suction pump (501) simultaneously draws the silicon powder generated by the cutting machine (2) cutting the single crystal silicon wafer, and the powder enters the silicon powder collection box (3) through the guidance of the first guide plate (101) and the second guide plate (102). S3. The microcontroller determines, based on the data collected in real time by the temperature sensor, the gas density sensor and the ultrasonic sensor, whether the gas density of the silicon powder pumped into the silicon powder collection box (3) by the suction pump (501) is greater than the critical value for silicon powder detonation. If it is greater, the microcontroller controls the cutting machine (2), the suction pump (501) and the rotary motor (6) to stop working, the dust baffle (15) returns to its initial position, and the collected silicon powder is collected by the dust baffle (15) and falls into the dust storage box (17). At the same time, the microcontroller controls the top support cylinder (29) to move upward, and the liquid in the liquid storage box (26) falls from top to bottom through the two drain pipes (27) to remove the floating silicon powder remaining in the air in the silicon powder collection box (3). S4. Restart the cutting machine (2), the suction pump (501) and the rotary motor (6) and control the top support cylinder (29) to return to the initial position.

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