Leveling composition, application thereof and electronic device

Abstract

The invention provides a leveling composition and application thereof and an electronic device, the leveling composition comprises an electronegative abrasive, an oxidizing agent, organic acid, amino acid, polyvinylpyrrolidone and derivatives thereof and water, the weight-average molecular weight of polyvinylpyrrolidone and derivatives thereof is less than or equal to 50000, the pH value of the leveling composition is 2-5, the weight-average molecular weight of polyvinylpyrrolidone and derivatives thereof is less than or equal to 5000, and the pH value of the leveling composition is 2-5. And the organic acid can be dissociated in the leveling composition. According to the leveling composition provided by the invention, proper polyvinylpyrrolidone and derivatives thereof are matched with organic acid, so that the leveling rates of titanium nitride and silicon nitride can be asynchronously regulated and controlled by the leveling composition, and the leveling rates of titanium nitride and silicon nitride are respectively regulated and controlled; and therefore, the leveling selection ratio of titanium nitride to silicon nitride is regulated and controlled, and various actual use requirements in the leveling process are met.

Description

Technical Field

[0001] The embodiments of the present application relate to the technical field of planarization compositions, and in particular to a planarization composition, its application, and an electronic device. Background Art

[0002] With the advancement of semiconductor technology, the industry's demand for precision in semiconductor devices is increasing. Planarization is a key indicator of the ultimate precision and performance of semiconductor devices. The planarization process can create a smoother wafer surface, effectively preventing short circuits caused by varying resistance values ​​within the same metal film due to uneven thickness. Furthermore, a smoother wafer surface makes etching easier, expanding the range of wiring layers and ultimately improving the overall performance of semiconductor devices.

[0003] When performing a planarization process on a substrate containing titanium nitride and silicon nitride, since silicon nitride and titanium nitride have similar charging properties, common planarization compositions on the market usually do not have the ability to individually regulate the planarization rates of titanium nitride and silicon nitride. As a result, the planarization rates regulated by the planarization compositions are usually increased or decreased simultaneously, and it is impossible to regulate the planarization selectivity of titanium nitride and silicon nitride, which makes it difficult to meet the production requirements of high-precision semiconductor devices. Summary of the Invention

[0004] In view of this, an embodiment of the present application provides a planarization composition. By selecting suitable polyvinyl pyrrolidone and its derivatives and organic acids, the planarization composition can achieve asynchronous regulation of the planarization rates of titanium nitride and silicon nitride, respectively regulate the planarization rates of titanium nitride and silicon nitride, and then achieve regulation of the planarization selectivity of titanium nitride and silicon nitride to meet various practical usage requirements in the planarization process.

[0005] In a first aspect, the present application provides a planarizing composition, which includes an electronegative abrasive, an oxidizing agent, an organic acid, an amino acid, polyvinyl pyrrolidone and its derivatives, and water, wherein the weight average molecular weight of the polyvinyl pyrrolidone and its derivatives is less than or equal to 50,000; the pH value of the planarizing composition is 2-5, and the organic acid can dissociate in the planarizing composition.

[0006] The planarization composition provided in the present application is matched with polyvinyl pyrrolidone and its derivatives and organic acids of suitable molecular weight. The two cooperate with each other to synergistically realize the asynchronous regulation of the planarization rate of titanium nitride and silicon nitride by the planarization composition containing electronegative abrasive, respectively regulating the planarization rate of titanium nitride and silicon nitride, and then realizing the regulation of the planarization selectivity of titanium nitride and silicon nitride. The various components in the planarization composition complement each other and cooperate with each other to jointly realize the special planarization rate regulation of titanium nitride, silicon nitride and metal materials. When applied to the planarization process of semiconductor devices, it can protect the metal material of the semiconductor device substrate while regulating the planarization selectivity of titanium nitride and silicon nitride according to actual needs, thereby improving the overall performance and yield of the semiconductor device.

[0007] In some embodiments of the present application, the weight average molecular weight of the polyvinyl pyrrolidone and its derivatives is 300-5000. By further controlling the weight average molecular weight of the polyvinyl pyrrolidone and its derivatives, the present application can further enhance the effect of the composition on regulating the planarization rate of silicon nitride while ensuring good dispersibility of the abrasive.

[0008] In some embodiments of the present application, the organic acid includes an organic carboxylic acid, and the primary dissociation constant pKa1 of the organic carboxylic acid is less than or equal to the sum of the pH value of the planarization combination and 0.5. By further selecting the organic acid and controlling the primary dissociation constant pKa1, the organic carboxylic acid can undergo primary dissociation and become negatively charged, thereby causing the titanium nitride surface to which it is attached through coordination to also become negatively charged, resulting in an electrostatic repulsion between it and the electronegative abrasive, thereby effectively slowing the planarization rate of titanium nitride, achieving regulation of the titanium nitride planarization rate, and further regulating the planarization selectivity of titanium nitride to silicon nitride.

[0009] In some embodiments of the present application, the organic acid includes one or more of malonic acid, dimethylmalonic acid, citric acid, tartaric acid, glutaric acid, succinic acid, and succinic acid. The present application selects a suitable organic acid in combination with polyvinyl pyrrolidone and its derivatives to adjust the planarization rates of titanium nitride and silicon nitride, respectively, thereby adjusting the planarization selectivity of titanium nitride and silicon nitride.

[0010] In an embodiment of the present application, the weight percentage of the polyvinyl pyrrolidone and its derivatives in the planarization composition is 0.001% to 0.1%, and the weight percentage of the organic acid is 0.1% to 1%. By controlling the weight percentage of the polyvinyl pyrrolidone and its derivatives and the organic acid within an appropriate range, the planarization selectivity of titanium nitride and silicon nitride can be further comprehensively controlled.

[0011] In some embodiments of the present application, the mass ratio of the polyvinyl pyrrolidone and its derivatives to the organic acid is 1:(4-200). The present application further controls the ratio of the polyvinyl pyrrolidone and its derivatives to the organic acid to achieve comprehensive asynchronous regulation of the planarization rate of titanium nitride and silicon nitride by the composition, further regulating its planarization selectivity for titanium nitride and silicon nitride, thereby facilitating subsequent filling processes of semiconductor devices and improving the performance and yield of semiconductor devices.

[0012] In some embodiments of the present application, the electronegative abrasive comprises one or more of aluminum oxide, silicon dioxide, and zirconium dioxide. Negatively charged particles are selected as abrasives in the present application. When these electronegative abrasives are used in the planarization process, they have a relatively high planarization rate for both silicon nitride and titanium nitride. Therefore, it is necessary to adjust their planarization selectivity for titanium nitride and silicon nitride.

[0013] In some embodiments of the present application, the oxidant includes one or more of hydrogen peroxide, urea peroxide, performic acid, peracetic acid, and peroxypropionic acid. By selecting the above oxidants, the present application can further oxidize the metal material to achieve a better planarization effect.

[0014] In some embodiments of the present application, the amino acid includes one or more of arginine, lysine, histidine, serine, and tyrosine. The present application can further protect the metal material by selecting appropriate amino acids.

[0015] In an embodiment of the present application, the planarization composition comprises the electronegative abrasive in an amount of 0.01% to 1% by weight, the oxidizing agent in an amount of 0.1% to 3% by weight, and the amino acid in an amount of 0.01% to 1% by weight. By controlling the content of each component within the aforementioned ranges, the present application effectively regulates the planarization selectivity of titanium nitride to silicon nitride while ensuring compatibility between the components, further enhancing the stability and uniformity of the composition.

[0016] In some embodiments of the present application, the planarization composition further includes an oxidant catalyst, which includes one or more of ferric nitrate, ferrous nitrate, and ferric gluconate. By selecting a suitable oxidant catalyst, the present application can further promote the oxidizing effect of the oxidant in the planarization composition, thereby enhancing the planarization effect of the planarization composition.

[0017] In an embodiment of the present application, the planarization composition has a planarization rate of v1 for titanium nitride, and a planarization rate of v2 for silicon nitride, with v1 / v2 being (10-80):1. The planarization composition provided herein utilizes specialized components for coordination and mutual synergy, thereby jointly regulating the planarization rates of titanium nitride and silicon nitride, thereby significantly improving the planarization selectivity of the planarization composition for titanium nitride and silicon nitride, thereby enhancing the precision and performance of semiconductor devices.

[0018] A second aspect of the present application provides an application of the planarization composition provided in the first aspect in a planarization process for electronic device fabrication. The planarization composition provided in the first aspect is applied to the planarization process for electronic device fabrication. The planarization composition provided in the present application can achieve specific control over the planarization rate of titanium nitride, silicon nitride, and metal materials. Its application in the planarization process of electronic devices can effectively improve its planarization selectivity for titanium nitride and silicon nitride while protecting the metal material of the electronic device substrate, facilitating subsequent processing of the substrate and thereby improving the overall performance and yield of the electronic device.

[0019] A third aspect of the present application further provides an electronic device comprising a planarized component, wherein the planarized component is produced by a planarization process using the planarization composition provided in the first aspect. The electronic device produced by the planarization process using the planarization composition provided in the present application has good precision and performance. DETAILED DESCRIPTION

[0020] The present application is further described in detail below in conjunction with preferred embodiments, but the protection scope of the present application is not limited to the following specific embodiments.

[0021] In this application, all professional terms have the same meanings as those generally understood by those skilled in the art. The professional terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of this application.

[0022] With the advancement of semiconductor technology, the industry's demand for precision in semiconductor devices is increasing. Planarization is a key indicator of the ultimate precision and performance of semiconductor devices. The planarization process can create a smoother wafer surface, effectively preventing short circuits caused by varying resistance values ​​within the same metal film due to uneven thickness. Furthermore, a smoother wafer surface makes etching easier, expanding the range of wiring layers and ultimately improving the overall performance of semiconductor devices.

[0023] When performing a planarization process on a substrate containing titanium nitride and silicon nitride, since silicon nitride and titanium nitride have similar charging properties, common planarization compositions on the market usually do not have the ability to individually regulate the planarization rates of titanium nitride and silicon nitride. As a result, the planarization rates regulated by the planarization compositions are usually increased or decreased simultaneously, and it is impossible to regulate the planarization selectivity of titanium nitride and silicon nitride, which makes it difficult to meet the production requirements of high-precision semiconductor devices.

[0024] In order to solve the above problems, the present application provides a planarization composition. By selecting suitable polyvinyl pyrrolidone and its derivatives and organic acids, the planarization composition can achieve asynchronous regulation of the planarization rate of titanium nitride and silicon nitride, respectively regulate the planarization rate of titanium nitride and silicon nitride, and then achieve regulation of the planarization selectivity of titanium nitride and silicon nitride to meet various practical usage requirements in the planarization process.

[0025] The present application provides a planarization composition, which includes an electronegative abrasive, an oxidizing agent, an organic acid, an amino acid, polyvinyl pyrrolidone and its derivatives, and water, wherein the weight average molecular weight of the polyvinyl pyrrolidone and its derivatives is less than or equal to 50,000; the pH value of the planarization composition is 2-5, and the organic acid can dissociate in the planarization composition. The present application controls the weight average molecular weight of polyvinyl pyrrolidone and its derivatives within a suitable range. On the one hand, these polyvinyl pyrrolidone and its derivatives can attach to the silicon nitride surface through hydrogen bonding and hydrophobic interaction, thereby effectively protecting the silicon nitride surface, greatly regulating the planarization rate of silicon nitride, while having little effect on the planarization rate of titanium nitride. On the other hand, controlling its weight average molecular weight within a suitable range can greatly reduce the agglomeration of the abrasive in the planarization composition, ensure that it has better dispersibility in the composition, and is more conducive to its regulating effect on the planarization rate of silicon nitride and making the planarization effect of the material more uniform. In addition, the present application uses an organic acid that can dissociate to control the pH value of the leveling composition in the range of 2-5, which can make the organic acid effectively regulate the leveling rate of titanium nitride. This is because these organic acids can dissociate and carry a strong negative charge, so that they adhere to the surface of titanium nitride and produce an electrostatic repulsion effect with the electronegative abrasive, thereby effectively slowing down the leveling rate of titanium nitride. The present application selects and adds polyvinyl pyrrolidone and its derivatives and organic acids of suitable molecular weight at the same time, and regulates the content ratio of the two respectively. The two cooperate with each other and are adapted to the system containing electronegative abrasives, thereby realizing the asynchronous regulation of the leveling rate of titanium nitride and silicon nitride by the leveling composition, regulating the leveling rate of titanium nitride and silicon nitride respectively, and then realizing the regulation of the leveling selectivity ratio of titanium nitride and silicon nitride to meet various practical use requirements in the leveling process. In addition, the amino acid in the leveling composition can be compatible with other components in the composition, thereby improving the stability and component uniformity of the composition. Furthermore, amino acids can form a protective film on the surface of metal materials, effectively inhibiting their corrosion. The components of this planarization composition complement and synergize to achieve specific planarization rate control for titanium nitride, silicon nitride, and metal materials. When applied to the planarization process of electronic devices, it can protect the metal material of the electronic device substrate while adjusting the planarization selectivity of titanium nitride and silicon nitride according to actual use requirements, thereby improving the overall performance and yield of semiconductor devices.

[0026] In the embodiment of the present application, the pH value of the leveling composition is 2-5. In some specific embodiments, the pH value of the leveling composition can be, but is not limited to, 2, 2.2, 2.4, 2.6, 2.8, 3, 3.2, 3.4, 3.6, 3.8, 4, 4.2, 4.5, 4.8 or 5, etc. The present application controls the pH value of the leveling composition within a suitable range. On the one hand, the metal material can be passivated, thereby slowing down the leveling rate of the metal material. On the other hand, the organic acid can also be dissociated, regulating the leveling rate of titanium nitride, and then regulating the leveling selectivity of titanium nitride and silicon nitride. Specifically, in some embodiments of the present application, the pH value of the leveling composition can be 2-4.2. In other embodiments of the present application, the pH value of the leveling composition can be 3-5. In the present application, the pH value of the leveling cleaning composition can be adjusted by the amount of organic acid added, and can also be adjusted by an alkaline pH regulator (such as ammonia water, etc.). In the present application, the pH value of the planarization cleaning composition can be measured, but is not limited to, by a pH meter.

[0027] In the present application, the weight average molecular weight of polyvinyl pyrrolidone and derivatives thereof is less than or equal to 50000. In some specific embodiments, the weight average molecular weight of polyvinyl pyrrolidone and derivatives thereof is 300, 500, 800, 1000, 1500, 2000, 2500, 3000, 3500, 4000, 4500, 5000, 6000, 8000, 10000, 15000, 20000, 25000, 30000, 35000, 40000, 45000, 50000. The present application can reduce the agglomeration of the abrasive in the smoothing composition to a great extent by controlling the weight average molecular weight of polyvinyl pyrrolidone and derivatives thereof within a suitable range, ensuring that it has better dispersibility in the composition. In some embodiments, the weight average molecular weight of polyvinyl pyrrolidone and derivatives thereof is 300-5000. Further controlling the weight average molecular weight of polyvinyl pyrrolidone and its derivatives can further enhance the regulating effect of the composition on the smoothing rate of silicon nitride while ensuring good dispersibility of the abrasive. In the present application, polyvinyl pyrrolidone and its derivatives include polyvinyl pyrrolidone and other polymers derived from polyvinyl pyrrolidone. In some embodiments, polyvinyl pyrrolidone and its derivatives can be, for example, one or more of polyvinyl pyrrolidone (PVP), vinyl pyrrolidone / vinyl acetate copolymer (PVP / VA), and cross-linked polyvinyl pyrrolidone (PVPP). In some specific embodiments, polyvinyl pyrrolidone can be, for example, PVP K12 (weight average molecular weight is about 3500), PVP K15 (weight average molecular weight is about 5500), PVP K17 (weight average molecular weight is about 10100), PVP K25 (weight average molecular weight is about 32000), and PVP K30 (weight average molecular weight is about 37900).

[0028] In the embodiment of the present application, the weight percentage of polyvinyl pyrrolidone and its derivatives in the planarization composition is 0.001%-0.1%. In some specific embodiments, the weight percentage of polyvinyl pyrrolidone and its derivatives in the planarization composition can be, for example, 0.001%, 0.002%, 0.003%, 0.005%, 0.006%, 0.008%, 0.01%, 0.02%, 0.03%, 0.05%, 0.06%, 0.08%, or 0.1%. In the present application, when the content of polyvinyl pyrrolidone and its derivatives in the planarization composition is high, the planarization composition has a better inhibitory effect on the planarization of silicon nitride, and the planarization rate of silicon nitride is slow; when the content of polyvinyl pyrrolidone and its derivatives in the planarization composition is low, the planarization composition has a poor inhibitory effect on the planarization of silicon nitride, the planarization rate of silicon nitride is fast, and polyvinyl pyrrolidone and its derivatives have little effect on the planarization rate of titanium nitride. By regulating the content of polyvinyl pyrrolidone and its derivatives, the present application can effectively regulate the planarization rate of the planarization composition on silicon nitride while having little effect on the planarization rate of titanium nitride, thereby regulating the planarization selectivity ratio of titanium nitride to silicon nitride.

[0029] In some embodiments of the present application, the organic acid includes an organic carboxylic acid, and the first-order dissociation constant pKa1 of the organic carboxylic acid is less than or equal to the sum of the pH value of the leveling combination and 0.5. For example, when the pH value of the leveling composition is A, the first-order dissociation constant pKa1 of the organic carboxylic acid is less than or equal to A+0.5. The present application further selects and controls the first-order dissociation constant pKa1 of the organic acid. When the first-order dissociation constant pKa1 of the organic carboxylic acid is less than or equal to the sum of the pH value of the leveling combination and 0.5, under the condition that the pH value of the leveling composition is 2-5, the organic carboxylic acid only undergoes first-order dissociation and becomes negatively charged, thereby causing the titanium nitride surface to which it is attached through coordination to also become negatively charged. Since the electronegative abrasive is also negatively charged, the two produce an electrostatic repulsion effect, which can effectively slow down the leveling rate of titanium nitride, thereby achieving regulation of the leveling rate of titanium nitride, and then regulating the leveling selectivity ratio of titanium nitride and silicon nitride. In the embodiment of the present application, the pH value of the leveling composition is 2-5. In the present application, the first-order dissociation constant pKa1 of the organic acid can be obtained by looking up the table. In some specific embodiments of the present application, the pH value of the leveling composition is 3, and the organic acid may include, for example, one or more of citric acid (pKa1 is 3.13), tartaric acid (pKa1 is 2.98), and malonic acid (pKa1 is 2.85). In some specific embodiments of the present application, the pH value of the leveling composition is 4, and the organic acid may include, for example, citric acid (pKa1 is 3.13), tartaric acid (pKa1 is 2.98), malonic acid (pKa1 is 2.85), glutaric acid (pKa1 is 3.77), and succinic acid (pKa1 is 4.16). In some embodiments of the present application, whether the organic acid dissociates in the leveling composition can be determined by, but is not limited to, comparing the pKa of the organic acid with the pK of the solvent. s When the pKa of the organic acid is less than the pKa of the solvent s In some embodiments of the present application, whether the organic acid dissociates in the planarization composition can also be determined by observing the changes in the characteristic peaks of the acid through infrared spectroscopy. For example, when carboxylic acid dissociates, the characteristic peak COO - The characteristic peak OH disappears.

[0030] In some embodiments of the present application, the organic acid includes one or more of malonic acid, dimethylmalonic acid, citric acid, tartaric acid, glutaric acid, succinic acid and butanedioic acid. The above-mentioned organic acid is an organic carboxylic acid containing two or more carboxyl groups. After these organic acids dissociate, a part of the carboxyl groups is bound to the surface of titanium nitride, and the other part of the carboxyl groups is free on the surface of titanium nitride, thereby enhancing the electrostatic repulsion force between titanium nitride and electronegative abrasives and reducing the leveling rate of titanium nitride. In some embodiments of the present application, the organic acid can be dimethylmalonic acid, citric acid, and butanedioic acid. The present application selects suitable organic acids to be matched with polyvinylpyrrolidone and its derivatives, and the two adjust the leveling rates of titanium nitride and silicon nitride respectively, thereby achieving the adjustment of the leveling selectivity of titanium nitride and silicon nitride. Moreover, the above-mentioned organic acid will not inhibit the activity of the oxidant in the composition, thereby not affecting the leveling effect of the leveling composition.

[0031] In an embodiment of the present application, the weight percentage of the organic acid in the planarization composition is 0.1%-1%. In some specific embodiments, the weight percentage of the organic acid in the planarization composition can be, for example, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, or 1%. In the present application, when the content of the organic acid in the planarization composition is high, the planarization composition has a better inhibitory effect on the planarization of titanium nitride, and the planarization rate of titanium nitride is slow; when the content of the organic acid in the planarization composition is low, the planarization composition has a poor inhibitory effect on the planarization of titanium nitride, the planarization rate of the planarization composition is fast, and the organic acid has little effect on the planarization rate of titanium nitride. By regulating the content of the organic acid, the present application can effectively regulate the planarization rate of the planarization composition on titanium nitride while having little effect on the planarization rate of titanium nitride, thereby regulating the planarization selectivity of titanium nitride to silicon nitride.

[0032] In the embodiment of the present application, the mass ratio of polyvinyl pyrrolidone and its derivatives to the organic acid is 1: (4-200). In some specific embodiments, the mass ratio of polyvinyl pyrrolidone and its derivatives to the organic acid can be, for example, 1: 4, 1: 5, 1: 8, 1: 10, 1: 20, 1: 30, 1: 50, 1: 80, 1: 100, 1: 150, 1: 200. The present application further controls the ratio of polyvinyl pyrrolidone and its derivatives to the organic acid, thereby achieving comprehensive asynchronous regulation of the planarization rate of titanium nitride and silicon nitride by the composition, further regulating the planarization selectivity of titanium nitride and silicon nitride, thereby facilitating the subsequent filling and other processes of the semiconductor device, and improving the performance and yield of the semiconductor device.

[0033] In the embodiments of the present application, the electronegative abrasive includes one or more of aluminum oxide, silicon dioxide and zirconium dioxide. In some specific embodiments of the present application, the electronegative abrasive may be silicon dioxide, for example. The present application selects negatively charged particles as abrasives. When these electronegative abrasives are used in the planarization process, the planarization rates of silicon nitride and titanium nitride are generally high, so it is necessary to regulate the planarization selectivity of titanium nitride and silicon nitride. In some embodiments of the present application, the electronegative abrasive may also be an electronegative abrasive containing a modifying group, including but not limited to aluminum oxide, silicon dioxide and zirconium dioxide coated with sulfate, or aluminum oxide, silicon dioxide and zirconium dioxide coated with sulfonate.

[0034] In an embodiment of the present application, the weight percentage of the electronegative abrasive in the planarization composition is 0.01%-1%. In some specific embodiments, the weight percentage of the electronegative abrasive in the planarization composition can be, for example, 0.01%, 0.02%, 0.03%, 0.05%, 0.06%, 0.08%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, or 1%. By selecting a suitable electronegative abrasive and controlling its content within a suitable range, the present application can further promote the mechanical action of the planarization composition on titanium nitride, silicon nitride, and metal materials (such as tungsten) to achieve a planarization effect.

[0035] In some embodiments of the present application, the particle size D50 of the electronegative abrasive is 50nm-200nm. In some specific embodiments, the particle size D50 of the electronegative abrasive can be, for example, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 140nm, 150nm, 160nm, 180nm, or 200nm. In some embodiments of the present application, the particle size D50 of the electronegative abrasive can be 50nm-100nm. In some other embodiments of the present application, the particle size D50 of the electronegative abrasive can be 120nm-200nm. The present application can further enhance the planarization effect and planarization uniformity of the abrasive by further limiting the particle size of the electronegative abrasive.

[0036] In some embodiments of the present application, the charge of the electronegative abrasive is less than or equal to -20 mV. In some specific embodiments, the charge of the electronegative abrasive can be, for example, -20 mV, -25 mV, -30 mV, -35 mV, -40 mV, -45 mV, or -50 mV. By controlling the charge of the electronegative abrasive within the above range, the electrostatic repulsion between the electronegative abrasive and titanium nitride can be further enhanced, thereby further controlling the control effect on the planarization rate of titanium nitride and silicon nitride.

[0037] In some embodiments of the present application, the planarization composition further includes an abrasive dispersant. By adding an abrasive dispersant, the dispersibility of the charged abrasive in the composition can be further improved, and the agglomeration of the electronegative abrasive can be largely prevented, thereby further improving the planarization effect of the planarization composition. In some specific embodiments, the abrasive dispersant includes but is not limited to one or more of sodium polystyrene sulfonate-maleic acid copolymer and lauryl alcohol polyoxyethylene ether ammonium sulfate. In some embodiments, the abrasive dispersant can be directly mixed with the electronegative abrasive and uniformly dispersed in the planarization composition. In some embodiments, the abrasive dispersant can be coated on the surface of the electronegative abrasive.

[0038] In an embodiment of the present application, the amino acids in the leveling composition include one or more of arginine, lysine, histidine, serine, and tyrosine. In an embodiment of the present application, the mass percentage of the amino acids in the leveling composition is 0.01%-1%. In some specific embodiments, the mass percentage of the amino acids in the leveling composition can be, for example, 0.01%, 0.02%, 0.03%, 0.05%, 0.06%, 0.08%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, or 1%. By controlling the type and content of the amino acids in the leveling composition within a suitable range, the present application can further protect metal materials such as tungsten and effectively inhibit the corrosion of the metal materials by the leveling composition. The amino acids have a better synergistic effect with the organic acids and polyvinyl pyrrolidone and its derivatives in the composition. While protecting the metal materials, they have little effect on the leveling rate of materials such as titanium nitride and silicon nitride. In addition, the amino acid in the smoothing composition is also compatible with other components in the composition, thereby improving the stability and component uniformity of the composition.

[0039] In an embodiment of the present application, the oxidant includes one or more of hydrogen peroxide, urea peroxide, performic acid, peracetic acid and peroxypropionic acid. In an embodiment of the present application, the mass percentage of the oxidant in the planarizing composition is 0.1%-3%. In some specific embodiments, the mass percentage of the oxidant in the planarizing composition can be, for example, 0.1%, 0.2%, 0.3%, 0.5%, 0.6%, 0.8%, 1%, 1.2%, 1.4%, 1.5%, 1.6%, 1.8%, 2%, 2.2%, 2.4%, 2.5%, 2.6%, 2.8%, 3%. By selecting a suitable oxidant and controlling its content within a suitable range, the present application can further promote the surface oxidation of titanium nitride and metal materials (such as tungsten) by the planarizing composition to achieve a planarizing effect. In some embodiments, the oxidant can oxidize the surface of the metal tungsten to form a softened tungsten oxide layer, thereby promoting the removal of the metal tungsten and increasing the metal tungsten grinding speed.

[0040] In some embodiments of the present application, the planarization composition further includes an oxidant catalyst. In some specific embodiments, the oxidant catalyst includes, but is not limited to, one or more of ferric nitrate, ferrous nitrate, and ferric gluconate. The addition of the oxidant catalyst can further enhance the oxidizing effect of the oxidant in the planarization composition, thereby improving the planarization effect of the planarization composition.

[0041] In some embodiments of the present application, the type and content of each component in the planarization composition can be measured by, but is not limited to, ICP-MS (Inductively Coupled Plasma Mass Spectrometry), IC-MS (Ion Chromatography-Mass Spectrometry), GC-MS (Gas Chromatography-Mass Spectrometry), and the like.

[0042] In some embodiments of the present application, the planarization rate of the planarization composition for titanium nitride is v1, and the planarization rate v1 is less than or equal to In some specific embodiments, the flattening rate v1 may be less than or equal to In other embodiments, the flattening rate v1 may be less than or equal to In some embodiments of the present application, the planarization rate of the planarization composition for silicon nitride is v2, and the planarization rate v2 is less than or equal to In some specific embodiments, the flattening rate v2 may be less than or equal to In some other specific embodiments, the smoothing rate v2 may be less than or equal to In the embodiment of the present application, the ratio v1 / v2 of the flattening rate of the planarizing composition to titanium nitride and silicon nitride is (10-80):1. In some specific embodiments, v1 / v2 can be, for example, 10:1, 20:1, 30:1, 40:1, 50:1, 60:1, 70:1, 80:1. In the present application, v1 / v2 specifically refers to the ratio of the flattening rate of the planarizing composition to titanium nitride to the flattening rate of the planarizing composition to silicon nitride (both units are the same). The flattening composition provided in the present application is matched by selecting special components, which cooperate with each other and jointly regulate the flattening rate of titanium nitride and silicon nitride, thereby significantly improving the flattening selectivity ratio of the planarizing composition to titanium nitride and silicon nitride, thereby improving the precision and performance of semiconductor devices.

[0043] In some embodiments of the present application, the planarizing composition can be used for chemical mechanical polishing, which combines chemical and physical methods to achieve flattening of the substrate surface, thereby obtaining electronic devices with higher flatness, fewer surface defects (such as scratches, pits, ripples, orange peel, pitting, fogging, etc.), and higher precision.

[0044] The planarization composition provided in this application can effectively achieve asynchronous regulation of the planarization rates of titanium nitride and silicon nitride by selecting appropriate component combinations, thereby achieving asynchronous regulation of the planarization rates of titanium nitride and silicon nitride by the planarization composition, regulating the planarization rates of titanium nitride and silicon nitride respectively, and then achieving regulation of the planarization selectivity of titanium nitride and silicon nitride to meet various practical use requirements in the planarization process. When applied to the planarization process of electronic devices, the planarization selectivity of titanium nitride and silicon nitride can be regulated according to use requirements while protecting the metal material of the electronic device substrate, thereby improving the overall performance and yield of the electronic device.

[0045] The present application also provides an application of the planarization composition provided above, specifically the use of the planarization composition provided above in a planarization process for preparing electronic devices. In some specific embodiments, the planarization composition can be used for chemical mechanical polishing of electronic devices to achieve surface planarization of semiconductor materials. Chemical mechanical polishing combines chemical and physical methods to achieve flattening of the substrate surface, thereby obtaining electronic devices with higher flatness, fewer surface defects (such as scratches, pits, ripples, orange peel, pitting, fogging, etc.), and higher precision.

[0046] In some specific embodiments, the electronic device may be, for example, a semiconductor device. In the embodiments of the present application, the planarization process may occur during the front-end processing of the electronic device, such as component production: etching, thin film deposition, and before and after ion implantation; the planarization process may occur during the back-end processing, such as packaging and before and after testing. In some embodiments of the present application, the planarization composition may produce a layer of oxide film on the surface of the wafer, which is then removed by the abrasive particles in the planarization solution to achieve the purpose of polishing the metal and non-metal materials on the surface of the device. The planarization composition provided in the present application can achieve coordinated regulation of the planarization rates of titanium nitride, silicon nitride, and metal materials (such as tungsten). When applied to the planarization process of electronic devices, it can effectively improve the planarization selectivity of titanium nitride and silicon nitride while protecting the metal material of the electronic device substrate, thereby facilitating the subsequent process of the substrate and improving the overall performance and yield of the electronic device.

[0047] This application also provides an electronic device comprising a planarized component, which is produced through a planarization process using the planarization composition provided above. In embodiments of this application, the component to be planarized can be, for example, a substrate or base material of the electronic device to be planarized. Substrates and base materials herein include not only silicon wafers but also other metal layers, dielectric layers, and the aforementioned substrates that have been surface-modified or have had supporting layers added. Electronic devices produced through a planarization process using the planarization composition provided herein exhibit excellent precision and performance.

[0048] The technical solution of this application is described in detail below with multiple embodiments.

[0049] Example 1

[0050] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0051] Example 2

[0052] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.01 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0053] Example 3

[0054] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.001 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0055] Example 4

[0056] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.1 wt% PVP K12, and the remainder is water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0057] Example 5

[0058] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K30, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0059] Example 6

[0060] A planarization composition comprises: 0.25 wt% of silicon dioxide, 0.5 wt% of hydrogen peroxide, 0.06 wt% of ferric nitrate, 0.05 wt% of lysine, 0.2 wt% of malonic acid, 0.05 wt% of cross-linked polyvinyl pyrrolidone (PVPP), and the remainder is water.

[0061] Example 7

[0062] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.1 wt% azelaic acid, 0.01 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 4.8 using aqueous ammonia.

[0063] Example 8

[0064] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 1 wt% citric acid, 0.01 wt% PVP K12, and the remainder is water. The pH value of the planarization composition is adjusted to 2 using ammonia water.

[0065] Example 9

[0066] A planarization composition comprises: 0.01 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0067] Example 10

[0068] A planarization composition comprises: 1 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0069] Example 11

[0070] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.1 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0071] Example 12

[0072] A planarization composition comprises: 0.25 wt% silicon dioxide, 3 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K12, and the remainder is water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0073] Example 13

[0074] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.01 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K12, and the remainder water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0075] Example 14

[0076] A planarization composition comprises: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 1 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K12, and the remainder is water. The pH value of the planarization composition is adjusted to 3 using ammonia water.

[0077] In order to highlight the beneficial effects of the embodiments of the present application, the following comparative examples are provided.

[0078] Comparative Example 1

[0079] A planarization composition comprises: 0.25 wt% of silicon dioxide, 0.5 wt% of hydrogen peroxide, 0.06 wt% of ferric nitrate, 0.05 wt% of lysine, 0.2 wt% of malonic acid, and the remainder is water.

[0080] Comparative Example 2

[0081] A planarization composition comprising: 0.25 wt% silicon dioxide, 0.5 wt% hydrogen peroxide, 0.06 wt% ferric nitrate, 0.05 wt% lysine, 0.2 wt% malonic acid, 0.05 wt% PVP K45, and the remainder water. The planarization composition agglomerated, making it impossible to test related properties such as planarization rate.

[0082] Comparative Example 3

[0083] A planarization composition comprises: 0.25 wt% of silicon dioxide, 0.5 wt% of hydrogen peroxide, 0.06 wt% of ferric nitrate, 0.05 wt% of lysine, 0.05 wt% of PVP K12, and the remainder is water.

[0084] Planarization rate test

[0085] The planarization compositions of Examples 1 to 14 and Comparative Examples 1 and 3 were used to planarize a 12-inch cleaned substrate to obtain a planarization rate. The test process was as follows: a fully automatic CMP (Chemical Mechanical Polishing) grinding device (Huahai Qingke 300D) was used, a two-layer grinding pad was used, a diamond pad regulator was used, the grinding pressure was set to 1 psi, the grinding table speed was set to 63 rpm, the grinding head speed was set to 60 rpm, and the abrasive supply rate was 200 ml / min. The measured results are shown in Table 1.

[0086] Table 1

[0087]

[0088] It can be seen from the data in Table 1 that compared with Comparative Example 1 in which no polyvinyl pyrrolidone and its derivatives are added and Comparative Example 3 in which no organic acid is added, the planarizing compositions prepared by selecting polyvinyl pyrrolidone and its derivatives with a molecular weight within an appropriate range and a suitable organic acid can achieve asynchronous regulation of the planarizing rates of titanium nitride and silicon nitride by the planarizing composition, respectively regulate the planarizing rates of titanium nitride and silicon nitride, and control the ratio of the planarizing rates of titanium nitride and silicon nitride within an ideal range to meet various practical usage requirements in the planarization process.

[0089] It should be understood that the first, second and various numerical numbers involved in this document are only distinguished for the convenience of description and are not intended to limit the scope of this application.

[0090] In this application, "and / or" describes the relationship between related objects, indicating that three possible relationships exist. For example, "A and / or B" can mean: A exists alone, A and B exist simultaneously, and B exists alone. A and B can be singular or plural. The character " / " generally indicates that the related objects are in an "or" relationship.

[0091] In this application, "at least one" means one or more, and "plurality" means two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c", or "at least one of a, b and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc or abc, where a, b, c can be single or multiple.

[0092] In this application, “-” represents a range value, including the endpoint values ​​at both ends. For example, the value of a can be 0.5-15, which means that the value of a can be between 0.5 and 15, and includes the endpoint values ​​0.5 and 15.

[0093] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. Some or all of the steps can be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0094] The above is a preferred embodiment of the present application, but it should not be construed as limiting the scope of the present application. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present application, and such improvements and modifications are also considered to be within the scope of protection of the present application.

Claims

1. A planarization composition, characterized in that: The planarization composition includes an electronegative abrasive, an oxidizing agent, an organic acid, an amino acid, polyvinyl pyrrolidone and its derivatives, and water, wherein the weight average molecular weight of the polyvinyl pyrrolidone and its derivatives is less than or equal to 50,000; the pH value of the planarization composition is 2-5, and the organic acid can dissociate in the planarization composition.

2. The planarization composition according to claim 1, wherein The weight average molecular weight of the polyvinyl pyrrolidone and its derivatives is 300-5000.

3. The planarization composition according to claim 1, wherein The organic acid includes an organic carboxylic acid, and the first order dissociation constant pKa1 of the organic carboxylic acid is less than or equal to the sum of the pH value of the leveling combination and 0.

5.

4. The planarization composition according to claim 1, wherein In the planarizing composition, the mass percentage of the polyvinyl pyrrolidone and its derivatives is 0.001%-0.1%; the mass percentage of the organic acid is 0.1%-1%; and the mass ratio of the polyvinyl pyrrolidone and its derivatives to the organic acid is 1:(4-200).

5. The planarization composition according to claim 1, wherein The organic acid comprises one or more of malonic acid, dimethylmalonic acid, citric acid, tartaric acid, glutaric acid, succinic acid and succinic acid; and / or, The electronegative abrasive comprises one or more of aluminum oxide, silicon dioxide and zirconium dioxide; and / or, The oxidant comprises one or more of hydrogen peroxide, urea peroxide, performic acid, peracetic acid and peroxypropionic acid; and / or, The amino acids include one or more of arginine, lysine, histidine, serine, and tyrosine.

6. The planarization composition according to claim 1, wherein The planarization composition further includes an oxidant catalyst, and the oxidant catalyst includes one or more of ferric nitrate, ferrous nitrate, and ferric gluconate.

7. The planarization composition according to claim 1, wherein In the planarizing composition, the mass percentage of the electronegative abrasive is 0.01%-1%; the mass percentage of the oxidant is 0.1%-3%; and the mass percentage of the amino acid is 0.01%-1%.

8. The planarization composition according to claim 1, wherein The planarization rate of the planarization composition for titanium nitride is v1, the planarization rate of the planarization composition for silicon nitride is v2, and the v1 / v2 is (10-80):

1.

9. Use of the planarization composition according to any one of claims 1 to 8 in a planarization process for preparing electronic devices.

10. An electronic device, characterized in that: The electronic device includes a planarization component, and the planarization component is made by a planarization process using the planarization composition according to any one of claims 1 to 8.

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