Electroplating device and wafer cleaning method using same

Abstract

The invention discloses an electroplating device and a wafer cleaning method using the same. The electroplating device comprises an electroplating chamber and a wafer clamp (used for positioning and connecting a wafer), and the electroplating chamber comprises a recovery tank and a cleaning water outlet (used for spraying cleaning water to the wafer). The wafer clamp has a first motion freedom degree capable of driving the wafer to rotate around the axial direction, and also has a second motion freedom degree capable of adjusting the included angle between the axial direction of the wafer and the horizontal plane; when the wafer is cleaned, the wafer clamp adjusts the axial direction of the wafer to be not perpendicular to the horizontal plane and drives the wafer to rotate around the axial direction, the spraying point of the cleaning water sprayed by the cleaning water outlet and the cleaning water outlet are located on the same side of the axial direction of the wafer, and at least one part of the recovery tank is located below the circumferential side of the wafer. In the cleaning process, the wafer can rotate around the axial direction under the condition that the axial direction of the wafer is not perpendicular to the horizontal plane; and the cleaning water which is located at the spraying point and attached to the lower surface of the wafer is guided into the recovery tank by the non-horizontal rotating centrifugal force.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to an electroplating device and a wafer cleaning method using the same. Background Art

[0002] Electrochemical deposition (ECD) is a key technology in semiconductor manufacturing and precision electroplating (such as Au and Ag alloy plating), used to form uniform metal layers on wafers. After plating, the wafers need to be cleaned to remove residual plating solution and other impurities. This step is crucial to ensuring a clean wafer surface and preventing defects in subsequent processes.

[0003] Existing cleaning methods suffer from the following issues: During the cleaning process, the rinse water sprayed from a fixed rinse water outlet directly impacts the horizontally positioned wafers, resulting in a low percentage of the rinse water being recovered by the recovery tank. The remaining rinse water can negatively impact the electroplating equipment. For example, the rinse water and the plating solution have different compositions, and splashing into the plating chamber can dilute and contaminate the plating solution, affecting plating quality. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the defect in the prior art that the proportion of cleaning water of the electroplating device recovered by the recovery tank is low, and to provide an electroplating device and a wafer cleaning method using the same.

[0005] The present invention solves the above technical problems through the following technical solutions:

[0006] An electroplating apparatus comprises an electroplating chamber and a wafer clamp, the wafer clamp being used to position and connect a wafer, the electroplating chamber comprising a recovery tank and a cleaning water outlet, the cleaning water outlet being used to spray cleaning water onto the wafer, and the wafer clamp having a first degree of freedom of motion capable of driving the wafer to rotate about an axial direction;

[0007] The wafer clamp further has a second degree of freedom of movement capable of adjusting the angle between the axial direction of the wafer and the horizontal plane;

[0008] When the electroplating device cleans the wafer, the wafer clamp adjusts the axial direction of the wafer to be non-perpendicular to the horizontal plane, and drives the wafer to rotate around the axial direction. The position where the cleaning water falls on the surface of the wafer is set as the injection point. The injection point of the cleaning water sprayed from the cleaning water outlet and the same cleaning water outlet are located on the same side of the axial direction of the wafer, and at least a portion of the recovery tank is located below the circumferential side of the wafer.

[0009] In this technical solution, an electroplating device is provided. The wafer clamp of the electroplating device, in addition to being able to drive the wafer to rotate around the axis, also has a second degree of freedom of motion capable of adjusting the angle between the axis of the wafer and the horizontal plane. When the wafer positioned by the wafer clamp is electroplated and is to be cleaned, the wafer can be adjusted by the wafer clamp to a state where its axis is not perpendicular to the horizontal plane. During the cleaning process, the cleaning water ejected from the cleaning water outlet rinses the lower surface of the wafer. When the axis of the wafer is not perpendicular to the horizontal plane, the wafer rotates around the axis. The cleaning water located at the injection point and attached to the lower surface of the wafer is diverted by the non-horizontal rotation centrifugal force of the wafer to a recovery tank located below the circumference of the wafer, thereby increasing the proportion of cleaning water recovered by the recovery tank. The electroplating device effectively reduces the possibility of cleaning water entering other structures in the electroplating chamber, ensuring the stable progress of the electroplating process.

[0010] Preferably, when the electroplating device cleans the wafer, the wafer clamp can continuously change the angle between the axial direction of the wafer and the horizontal plane along the second degree of freedom of movement.

[0011] In the present technical solution, through the above-mentioned setting, since the wafer clamp can continuously change the angle between the axial direction and the horizontal plane of the wafer in the second degree of freedom of movement, during the cleaning process, the wafer can rotate around the axial direction when its axial direction and the horizontal plane are not perpendicular, and swing in the second degree of freedom of movement at the same time; the cleaning water ejected from the cleaning water outlet rinses the wafer, and is then jointly diverted into the recovery tank by the rotating centrifugal force and the swinging centrifugal force of the wafer, making the diversion more precise, and further improving the proportion of cleaning water recovered by the recovery tank.

[0012] Preferably, when the electroplating device cleans the wafer, the angle between the axial direction of the wafer and the horizontal plane is in the range of 85°-95°.

[0013] In this technical solution, through the above-mentioned settings, the wafer can be rotated at a reasonable angle, and the cleaning water can be more accurately directed to the recovery tank, thereby increasing the proportion of cleaning water recovered by the recovery tank and reducing the possibility of cleaning water splashing to the outside of the electroplating device and causing contamination.

[0014] Preferably, the electroplating chamber includes an electroplating chamber and a cleaning chamber, the cleaning chamber is located above the electroplating chamber, and the recovery tank and the cleaning water outlet are both provided in the cleaning chamber;

[0015] When the electroplating device cleans the wafer, the wafer clamp moves upward from the electroplating chamber to the cleaning chamber.

[0016] In this technical solution, the above-mentioned configuration integrates both the cleaning and plating processes within the plating chamber, simplifying the switching between the two processes and accommodating the need for both the plating solution to be contained during the plating process and the spraying of cleaning water during the cleaning process. Furthermore, by increasing the proportion of cleaning water recovered by the recovery tank, the risk of cleaning water splashing into the plating chamber and diluting and contaminating the plating solution is reduced, thereby improving plating quality.

[0017] Preferably, the recovery groove is arranged around the cleaning chamber.

[0018] In this technical solution, through the above-mentioned arrangement, the cleaning water directed to all circumferential directions of the wafer by the rotating centrifugal force of the wafer can be recovered by the recovery tank, further increasing the proportion of the cleaning water recovered by the recovery tank.

[0019] Preferably, the cleaning water outlet is provided on a side of the cleaning chamber.

[0020] In the present technical solution, through the above arrangement, the wafers can be cleaned in a circumferential direction by cooperating with a plurality of dispersed cleaning water outlets, thereby improving the cleaning efficiency.

[0021] Preferably, the electroplating device further comprises a shielding member, wherein the shielding member is located above the electroplating chamber;

[0022] The shielding member is provided with a channel for allowing the wafer fixture to enter the electroplating chamber.

[0023] In this technical solution, the above-mentioned setting facilitates the wafer clamp to carry the wafer into the electroplating chamber, while the shielding member blocks the possibility of cleaning water splashing outside the electroplating chamber, thereby reducing the possibility of contamination.

[0024] Preferably, the electroplating device further comprises a driving member, wherein the driving member is used to connect the wafer clamp and drive the wafer clamp to move in the first degree of freedom and / or the second degree of freedom.

[0025] In this technical solution, through the above-mentioned setting, a relatively simple structure can be used to provide power for the movement of the wafer clamp in the first degree of freedom and / or the second degree of freedom, so that the wafer can move accordingly during the cleaning process to increase the proportion of cleaning water recovered by the recovery tank.

[0026] A wafer cleaning method using the electroplating device as described above;

[0027] The wafer cleaning method comprises the following steps:

[0028] The wafer clamp is positioned and connected to the wafer;

[0029] The wafer clamp adjusts the axial direction of the wafer to be non-perpendicular to the horizontal plane along the second degree of freedom of movement, and drives the wafer to rotate around the axial direction;

[0030] The cleaning water outlet sprays the cleaning water toward the wafer surface;

[0031] The cleaning water is subjected to the force of the wafer rotating around the axis and enters the recovery tank.

[0032] In this technical solution, by providing this wafer cleaning method, during the cleaning process, the cleaning water can be diverted to the recovery tank by the centrifugal force of the wafer's rotation, thereby increasing the proportion of cleaning water recovered by the recovery tank. This wafer cleaning method effectively reduces the possibility of cleaning water entering other structures in the electroplating chamber, ensuring the stable progress of the electroplating process.

[0033] Preferably, the wafer cleaning method further comprises:

[0034] When the wafer clamp adjusts the axial direction of the wafer to be non-perpendicular to the horizontal plane along the second degree of freedom of movement and drives the wafer to rotate around the axial direction, the wafer clamp also continuously changes the angle between the axial direction of the wafer and the horizontal plane along the second degree of freedom of movement;

[0035] When the cleaning water is subjected to the force of the wafer rotating around the axis, the cleaning water is also subjected to the force of the continuously changing angle between the axial direction of the wafer and the horizontal plane, and enters the recovery tank.

[0036] In this technical solution, through the above-mentioned setting, during the cleaning process, the cleaning water can be directed into the recovery tank by the non-horizontal rotational centrifugal force and the swinging centrifugal force of the wafer, making the diversion more precise and further increasing the proportion of cleaning water recovered by the recovery tank.

[0037] The positive progress effect of the present invention is:

[0038] The wafer clamp of the electroplating device, in addition to being able to drive the wafer to rotate about its axis, also has a second degree of freedom of motion capable of adjusting the angle between the wafer's axis and the horizontal plane. This allows the wafer positioned by the wafer clamp to be adjusted to a position where its axis is non-perpendicular to the horizontal plane when the wafer is cleaned after electroplating. During the cleaning process, the cleaning water ejected from the cleaning water outlet rinses the lower surface of the wafer. The wafer rotates about its axis when its axis is non-perpendicular to the horizontal plane. The cleaning water located at the injection point and adhering to the lower surface of the wafer is diverted by the non-horizontal rotational centrifugal force of the wafer into a recovery tank located below the circumference of the wafer, thereby increasing the proportion of cleaning water recovered by the recovery tank. The electroplating device effectively reduces the possibility of cleaning water entering other structures in the electroplating chamber, ensuring the stable operation of the electroplating process. During the cleaning process, the wafer cleaning method allows the cleaning water to be diverted by the non-horizontal rotational centrifugal force of the wafer into the recovery tank, thereby increasing the proportion of cleaning water recovered by the recovery tank, effectively reducing the possibility of cleaning water entering other structures in the electroplating chamber, and ensuring the stable operation of the electroplating process. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a schematic diagram of the cross-sectional structure of an electroplating device in the prior art.

[0040] Figure 2 Schematic diagram of the cross-sectional structure of the electroplating device according to embodiment 1 of the present invention (1).

[0041] Figure 3 This is a schematic diagram of the cross-sectional structure of the electroplating device according to Example 1 of the present invention (II).

[0042] Figure 4 This is a step diagram of the wafer cleaning method according to embodiment 1 of the present invention.

[0043] Description of reference numerals:

[0044] Wafer 1

[0045] Wafer chuck 2

[0046] Electroplating chamber 3

[0047] Electroplating Area 31

[0048] Plating chamber 311

[0049] Electrode 312

[0050] Flow plate 313

[0051] Drainage channel 314

[0052] Liquid inlet 315

[0053] Liquid outlet 316

[0054] Cleaning area 32

[0055] N2 port 321

[0056] Recovery tank 322

[0057] Wash water outlet 323

[0058] Cleaning chamber 324

[0059] First shielding member 325

[0060] Injection point 326

[0061] Cleaning water 327

[0062] Second shielding member 328

[0063] Drive 4

[0064] The first degree of freedom of motion A1

[0065] Axis direction of wafer A2

[0066] The second degree of freedom of motion B1

[0067] The angle β between the wafer axis and the horizontal plane DETAILED DESCRIPTION

[0068] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples.

[0069] like Figure 1 The electroplating apparatus shown mainly includes a wafer holder 2, an electroplating chamber 3, and a drive 4. The lower surface of the wafer holder 2 is placed horizontally to connect to the wafer 1. The electroplating chamber 3 includes an electroplating area 31 and a cleaning area 32. During electroplating, the wafer holder 2 descends with the wafer 1, extending into the electroplating chamber 311 (which contains the electroplating solution) within the electroplating area 31, and rotates around the axis of the wafer 1. During the rotation, the electrode 312 in the electroplating chamber 311 is energized, forming a uniform electroplating layer on the surface of the wafer 1. The electroplating area 31 also includes structures such as a flow plate 313, a drainage channel 314, a liquid inlet 315, and a liquid outlet 316. When the electroplating is completed, the wafer holder 2 carries the wafer 1 to the cleaning chamber 324 of the cleaning area 32, and the cleaning water outlet 323 sprays cleaning water 327 upward at an angle to clean the wafer 1. The cleaning water 327 after cleaning is recovered through the annular recovery groove 322; the N2 port 321 in the cleaning area is connected to the nitrogen pipeline to provide nitrogen protection for the cleaning process of the wafer 1.

[0070] like Figure 2 and Figure 3As shown, this embodiment provides an electroplating device, which includes an electroplating chamber 3 and a wafer clamp 2. The wafer clamp 2 is used to position and connect the wafer 1. The electroplating chamber 3 includes a recovery tank 322 and a cleaning water outlet 323. The cleaning water outlet 323 is used to spray cleaning water 327 onto the wafer 1. The wafer clamp 2 has a first degree of freedom of motion A1 that can drive the wafer 1 to rotate around the axial direction A2.

[0071] The wafer clamp 2 also has a second degree of freedom of movement B1 capable of adjusting the angle β between the axial direction A2 of the wafer 1 and the horizontal plane.

[0072] When the electroplating device cleans the wafer 1, the wafer holder 2 adjusts the axial direction A2 of the wafer 1 to be non-vertical to the horizontal plane (see Figure 2 ), and drives the wafer 1 to rotate around the axial direction A2, and the position where the cleaning water 327 falls on the surface of the wafer 1 is set as the injection point 326, the injection point of the cleaning water 327 injected by the cleaning water outlet 323 and the same cleaning water outlet 323 are located on the same side of the axial direction A2 of the wafer 1, and at least a part of the recovery tank 322 is located below the circumferential side of the wafer 1.

[0073] When wafer 1 positioned by wafer holder 2 is ready for cleaning after electroplating, wafer 1 can be adjusted by wafer holder 2 to a position where its axis A2 is non-perpendicular to the horizontal plane. During the cleaning process, cleaning water 327 ejected from cleaning water outlet 323 rinses the lower surface of wafer 1. With axis A2 non-perpendicular to the horizontal plane, wafer 1 rotates about axis A2. Cleaning water 327 located at injection point 326 and adhering to the surface of wafer 1 is diverted by the centrifugal force of the non-horizontal rotation of wafer 1 into recovery tank 322 located below the circumference of wafer 1, thereby increasing the proportion of cleaning water 327 recovered by recovery tank 322. This electroplating apparatus effectively reduces the possibility of cleaning water 327 entering other structures within electroplating chamber 3, ensuring the stable performance of the electroplating process.

[0074] In this embodiment, the distance between injection point 326 and the center of wafer 1 is controlled to be a predetermined distance. The predetermined distance depends on factors such as the size of wafer 1. The injection point is typically controlled by adjusting the pressure and flow rate of cleaning water 327 ejected from cleaning water outlet 323. Wafer 1 should not be rotated before injection point 326 is adjusted.

[0075] In this embodiment, when the electroplating apparatus cleans wafer 1, the angle β between the axial direction A2 of wafer 1 and the horizontal plane is 85°. This allows wafer 1 to rotate at a reasonable angle, more accurately directing the cleaning water 327 into the recovery tank 322, thereby increasing the proportion of cleaning water 327 recovered by the recovery tank 322 and reducing the possibility of cleaning water 327 splashing onto the exterior of the electroplating apparatus and causing contamination. Of course, in other embodiments, the angle between the axial direction A2 of wafer 1 and the horizontal plane can also take other values ​​within the range of 85°-95° ​​to achieve similar effects.

[0076] In this embodiment, the electroplating chamber 3 includes a plating chamber 311 and a cleaning chamber 324 . The cleaning chamber 324 is located above the plating chamber 311 . The recovery tank 322 and the cleaning water outlet 323 are both disposed in the cleaning chamber 324 .

[0077] When the electroplating apparatus cleans wafer 1, wafer holder 2 moves upward from plating chamber 311 into cleaning chamber 324, integrating both the cleaning and plating processes within plating chamber 3. This simplifies switching between the two processes and accommodates the need to contain plating solution during the plating process and spray cleaning water 327 during the cleaning process. Furthermore, since the proportion of cleaning water 327 recovered by recovery tank 322 is increased, the dilution and contamination of the plating solution by splashing cleaning water 327 into plating chamber 311 is reduced, thereby improving electroplating quality.

[0078] In this embodiment, the recovery groove 322 is arranged in a circle around the cleaning chamber 324, so that the cleaning water 327 guided to each circumference of the wafer 1 by the rotating centrifugal force of the wafer 1 can be recovered by the recovery groove 322, further increasing the proportion of the cleaning water 327 recovered by the recovery groove 322.

[0079] In this embodiment, the cleaning water outlet 323 is provided on the side of the cleaning chamber 324 , so that the wafer 1 can be cleaned in a circumferential direction by cooperating with the dispersed plurality of cleaning water outlets 323 , thereby improving the cleaning efficiency.

[0080] In this embodiment, the electroplating device also includes a first shielding member 325, which is located above the electroplating chamber 3; the first shielding member 325 is provided with a channel for the wafer clamp 2 to enter the electroplating chamber 3, so that the wafer clamp 2 can carry the wafer 1 into the electroplating chamber 3. At the same time, the first shielding member 325 can block the cleaning water 327, thereby reducing the possibility of splashing outside the electroplating chamber 3 and reducing the possibility of contamination.

[0081] In this embodiment, the first shielding member 325 is arranged around the top of the cleaning chamber 324 and is tilted upward from the edge to the center to block the cleaning water 327 splashing outward and make it fall back into the cleaning chamber 324 instead of the electroplating chamber 311 below, ensuring that the surrounding environment and the electroplating chamber 311 are not contaminated.

[0082] In this embodiment, the electroplating apparatus further includes a driver 4, which is connected to the wafer chuck 2 and drives the wafer chuck 2 to move in the first degree of freedom A1 and the second degree of freedom B1. This relatively simple structure provides power for the movement of the wafer chuck 2 in both directions. During the cleaning process, the wafer 1 is caused to move accordingly, thereby increasing the proportion of cleaning water 327 recovered by the recovery tank 322. Of course, in other embodiments, the wafer chuck may also provide power only for movement in the first degree of freedom or the second degree of freedom.

[0083] In this embodiment, the driving member 4 is an F-axis and the wafer clamp 2 is a plating head, so that the movement in the first degree of freedom A1 and the second degree of freedom B1 can be simultaneously achieved through the existing structure, thereby improving the integration of the electroplating device.

[0084] In this embodiment, the driver 4 is connected to the wafer clamp 2, and the driver 4 can control the wafer clamp 2 to rotate 360 ​​degrees horizontally around the axial direction A2 of the wafer 1. Specifically, a rotary motor is provided to drive the wafer clamp 2 to rotate through the driver 4; a rotation angle sensor is provided to monitor the rotation angle of the wafer clamp 2 in real time and feed the data back to the controller; the controller controls the operation of the rotary motor according to the preset program and actual needs; an angle adjustment motor is provided to drive the wafer clamp 2 to adjust the angle through the driver 4, and the angle sensor monitors the tilt angle of the wafer clamp 2 in real time and feeds the data back to the control system. When the wafer clamp 2 rotates a certain angle while holding the wafer 1, the cleaning water outlet 323 begins to spray cleaning water onto the wafer 1.

[0085] In this embodiment, a recovery trough 322 is disposed around the edge of the open end of the electroplating chamber 311 to receive wastewater from cleaning the wafers 1. A second shielding member 328 is provided between the recovery trough 322 and the electroplating chamber 311 to partially block any splashing of cleaning water into the electroplating chamber 311. Furthermore, a drainage channel 314 is provided to connect the recovery trough 322 to the outside world, allowing for the timely removal of wastewater.

[0086] In this embodiment, for a true round wafer 1 with a diameter of 200 mm, the following parameters can be used to minimize the amount of cleaning water 327 entering the plating chamber 311: β = 88°, the spray pressure at the cleaning water outlet 323 is 0.8 MPa, and the spray flow rate is 8 L / min. For wafers with other special shapes or surface structures, the tilt angle of the plating head and the spray pressure and flow rate at the cleaning water outlet can be further adjusted to values ​​suitable for actual conditions.

[0087] The relevant experimental data are as follows; "Rinse offset" is the distance between the wafer and the horizontal plane where the water nozzle is located (this parameter is used to determine the height position of the wafer), "Plating head Angle°" refers to the complementary angle of β, and "Entering Chamber Amount" and "Entering Chamber Ratio to Total Amount" refer to the amount of cleaning water 327 entering the electroplating chamber 311 and the ratio of the amount entering the electroplating chamber 311 to the amount of water discharged, respectively:

[0088]

[0089]

[0090]

[0091]

[0092]

[0093] In actual applications, cleaning tests can be conducted on different batches and types of wafers, and relevant data can be collected and analyzed to continuously refine cleaning process parameters and operating procedures to further improve cleaning efficiency and quality, while reducing production costs and scrap rates. Furthermore, regular maintenance and servicing of electroplating equipment to ensure the normal operation and accuracy of each system is also an important measure to ensure cleaning results.

[0094] like Figure 4 As shown, this embodiment also provides a wafer cleaning method, which uses the electroplating device as described above;

[0095] The steps of the wafer cleaning method include:

[0096] S1, wafer clamp 2 is positioned and connected to wafer 1;

[0097] S2, the wafer clamp 2 adjusts the axial direction A2 of the wafer 1 along the second degree of freedom of motion B1 to be non-perpendicular to the horizontal plane, and drives the wafer 1 to rotate around the axial direction A2;

[0098] S3, the cleaning water outlet 323 sprays cleaning water 327 toward the surface of the wafer 1;

[0099] S4 , the cleaning water 327 is subjected to the force of the wafer 1 rotating around the axis and enters the recovery tank 322 .

[0100] In this technical solution, by providing this wafer cleaning method, during the cleaning process, the cleaning water 327 can be directed into the recovery tank 322 by the centrifugal force of the rotation of the wafer 1, thereby increasing the proportion of the cleaning water 327 recovered by the recovery tank 322. This wafer cleaning method effectively reduces the possibility of the cleaning water 327 entering other structures in the electroplating chamber 3, ensuring the stable progress of the electroplating process.

[0101] Preferably, the wafer cleaning method further comprises:

[0102] S21, when the wafer clamp 2 adjusts the axial direction A2 of the wafer 1 to be non-perpendicular to the horizontal plane along the second degree of freedom of movement B1 and drives the wafer 1 to rotate around the axial direction A2, the wafer clamp 2 also continuously changes the angle β between the axial direction A2 of the wafer 1 and the horizontal plane along the second degree of freedom of movement B1;

[0103] S41 , when the cleaning water 327 is subjected to the force of the wafer 1 rotating around its axis, the cleaning water 327 is also subjected to the force of the continuously changing angle β between the axial direction A2 of the wafer 1 and the horizontal plane, and enters the recovery tank 322 .

[0104] In this technical solution, through the above-mentioned setting, during the cleaning process, the cleaning water 327 can be jointly diverted into the recovery tank 322 by the rotating centrifugal force and the swinging centrifugal force of the wafer 1, making the diversion more precise and further improving the proportion of the cleaning water 327 recovered by the recovery tank 322.

[0105] Example 2

[0106] Please refer to Figure 2 In this embodiment, the external structure of the electroplating device is the same, but there are differences in the movement of the wafer clamp 2. Specifically, when the electroplating device cleans the wafer 1, the wafer clamp 2 can continuously change the angle β between the axial direction A2 of the wafer 1 and the horizontal plane along the second degree of freedom of movement B1. During the cleaning process, the wafer 1 can rotate around the axial direction A2 when its axial direction A2 is not perpendicular to the horizontal plane, and at the same time swing on the second degree of freedom of movement B1; the cleaning water 327 ejected from the cleaning water outlet 323 rinses the wafer 1, and is then guided into the recovery tank 322 by the rotational centrifugal force and the swinging centrifugal force of the wafer 1, making the diversion more precise and further improving the proportion of the cleaning water 327 recovered by the recovery tank 322.

[0107] Although specific embodiments of the present invention have been described above, those skilled in the art will appreciate that these are merely illustrative and that the scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, and such changes and modifications are intended to fall within the scope of the present invention.

Claims

1. An electroplating apparatus comprising an electroplating chamber and a wafer clamp, the wafer clamp being used to position and connect a wafer, the electroplating chamber comprising a recovery tank and a rinse water outlet, the rinse water outlet being used to spray rinse water onto the wafer, the wafer clamp having a first degree of freedom of motion capable of driving the wafer to rotate axially, and characterized in that: The wafer clamp further has a second degree of freedom of movement capable of adjusting the angle between the axial direction of the wafer and the horizontal plane; When the electroplating device cleans the wafer, the wafer clamp adjusts the axial direction of the wafer to be non-perpendicular to the horizontal plane, and drives the wafer to rotate around the axial direction. The position where the cleaning water falls on the surface of the wafer is set as the injection point. The injection point of the cleaning water sprayed from the cleaning water outlet and the cleaning water outlet are located on the same side of the axial direction of the wafer, and at least a portion of the recovery tank is located below the circumferential side of the wafer.

2. An electroplating device according to claim 1, characterized in that: When the electroplating device cleans the wafer, the wafer clamp can continuously change the angle between the axial direction of the wafer and the horizontal plane along the second degree of freedom of movement.

3. An electroplating device according to claim 1, characterized in that: When the electroplating device cleans the wafer, the angle between the axial direction of the wafer and the horizontal plane is in the range of 85°-95°.

4. An electroplating device according to claim 1, characterized in that: The electroplating chamber includes an electroplating chamber and a cleaning chamber, the cleaning chamber is located above the electroplating chamber, and the recovery tank and the cleaning water outlet are both provided in the cleaning chamber; When the electroplating device cleans the wafer, the wafer clamp moves upward from the electroplating chamber to the cleaning chamber.

5. An electroplating device as claimed in claim 4, characterized in that: The recovery groove is arranged around the cleaning chamber.

6. An electroplating device as claimed in claim 4, characterized in that: The cleaning water outlet is arranged on the side of the cleaning chamber.

7. The electroplating device according to claim 1, wherein: The electroplating device further includes a shielding member, wherein the shielding member is located above the electroplating chamber; The shielding member is provided with a channel for allowing the wafer fixture to enter the electroplating chamber.

8. The electroplating device according to claim 1, wherein: The electroplating device further includes a driving member, which is used to connect to the wafer clamp and drive the wafer clamp to move in the first degree of freedom and / or the second degree of freedom.

9. A wafer cleaning method, characterized in that: It adopts the electroplating device according to any one of claims 1 to 8; The wafer cleaning method comprises the following steps: The wafer clamp is positioned and connected to the wafer; The wafer clamp adjusts the axial direction of the wafer to be non-perpendicular to the horizontal plane along the second degree of freedom of movement, and drives the wafer to rotate around the axial direction; The cleaning water outlet sprays the cleaning water toward the wafer surface; The cleaning water is subjected to the force of the wafer rotating around the axis and enters the recovery tank.

10. The wafer cleaning method according to claim 9, wherein: The wafer cleaning method further comprises the following steps: When the wafer clamp adjusts the axial direction of the wafer to be non-perpendicular to the horizontal plane along the second degree of freedom of movement and drives the wafer to rotate around the axial direction, the wafer clamp also continuously changes the angle between the axial direction of the wafer and the horizontal plane along the second degree of freedom of movement; When the cleaning water is subjected to the force of the wafer rotating around the axis, the cleaning water is also subjected to the force of the continuously changing angle between the axial direction of the wafer and the horizontal plane, and enters the recovery tank.

Images