A semiconductor thin film physical vapor deposition device

Abstract

The present invention relates to a semiconductor thin film physical vapor deposition device applied to the field of semiconductor-related technologies. Through the arrangement of a bidirectional cooling unit, when cooling the runway area, the directions of water inlet and water outlet can be continuously and alternately changed, thereby reducing the temperature difference between the water inlet and the water outlet of the horizontal cooling channel, so that the uniformity of cooling the runway area is improved, thereby making the film formation on the semiconductor surface more uniform; in addition, with the function of the liquid pusher plate, it can isolate the newly incoming cooling water and the cooling liquid that has absorbed heat, so that the cooling liquid that has absorbed heat can be fully discharged, effectively avoiding the occurrence of dead water, and further improving the cooling uniformity; at the same time, the liquid pusher plate can also disturb the junction of the newly incoming and the cooling liquid that has absorbed heat, thereby making the temperature transition at the junction more natural, effectively avoiding the occurrence of local excessive temperature differences, and maintaining stable and uniform molding of the film.

Description

Technical Field

[0001] The present invention relates to a semiconductor thin film physical vapor deposition device, and in particular to a semiconductor thin film physical vapor deposition device applied to the semiconductor-related technical field. Background Art

[0002] Physical vapor deposition (PVD) is a technique that uses physical methods (such as sputtering and evaporation) in a vacuum environment to atomically / ionize a source material (target) and deposit it onto a wafer surface to form a thin film. It is primarily used to form semiconductor metal layers (such as copper, aluminum, titanium, and titanium nitride), providing conductive interconnects and signal transmission capabilities for chips. PVD equipment, as the core equipment for semiconductor metallization, is driven by sputtering technology and continues to evolve towards high uniformity, low pollution, and intelligent technology.

[0003] Physical vapor deposition (PVD) primarily includes sputtering, vacuum evaporation, and ionized PVD (PVD), with sputtering being the current mainstream technology. When sputtering is used to coat semiconductor surfaces, the water cooling system is crucial for maintaining process stability. In magnetron sputtering, the plasma is confined by a magnetic field to a ring-shaped region (the racetrack) on the target surface. Ion bombardment in this region is intense, resulting in temperatures significantly higher than in other areas. Traditional water-cooling systems typically have serpentine cooling channels. For example, the cooling channels in a magnetron sputtering region cooling device disclosed in Chinese Patent Specification No. CN214218841U and the cooling channel in a magnetron sputtering coating device disclosed in Chinese Patent Specification No. CN214496461U result in uneven cooling water flow rate distribution. Strong magnetic field regions exhibit direct heat transfer, while areas that are not directly connected to the flow channel experience slower heat transfer. This results in target surface temperature fluctuations exceeding 50°C and localized temperature differences, which can lead to abnormalities such as cracking and warping in the target, compromising the uniformity and stability of the coating process.

[0004] To overcome the previous problem, some water cooling systems directly set the flow channel to a horizontal shape so that the entire runway area can be covered by the flow channel, making the heat exchange uniform. However, this design is prone to dead water areas. When the cooling water circulates, the water in some areas is difficult to circulate with the outside world. In addition, since the coolant discharged from the outlet absorbs a large amount of heat, its temperature is higher than that at the water inlet, so that there is still a certain temperature difference in the corresponding runway area, the effect of maintaining uniform coating is poor. Summary of the Invention

[0005] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is that the existing arrangement of the cooling channel causes a certain temperature difference to easily occur in the runway area, affecting the uniformity and stability of film forming.

[0006] To solve the above problems, the present invention provides a semiconductor thin film physical vapor deposition device, including a control cabinet, wherein a loading box, a sputtering box, and a loading chamber are fixedly installed on the upper end of the control cabinet from left to right in sequence, and transition channels are fixedly connected between the loading box and the sputtering box, and between the sputtering box and the loading chamber. The two transition channels communicate with the loading box, the sputtering box, and the loading chamber. Box doors are sealed at the upper ends of the loading box and the loading chamber. Conveyor belts are fixedly installed in the inner cavities of the loading box, the sputtering box, and the loading chamber. The ends of the three conveyor belts extend into the corresponding transition channels. The upper end of the conveyor belt in the loading box is fixedly connected to a tray, and a placement groove is cut at the upper end of the tray.

[0007] Three target assemblies are fixedly connected to the upper end of the sputtering box, and the lower ends of the three target assemblies pass through the sputtering box and extend into the interior of the sputtering box. The target assembly includes a base fixedly connected to the sputtering box, a target fixedly connected to the lower end of the base by bolts, and an outer cover sealed and fixed to the upper end of the base. Two handles are also fixedly connected to the upper end of the base. The outer cover is located between the two bases. A rectangular through groove is cut at the upper end of the base. A strong magnetic plate is fixedly connected to the upper end of the target, and the strong magnetic plate is located in the rectangular through groove. An isolation layer is fixedly connected to the mouth of the rectangular through groove. A two-way cooling unit is provided in the space between the base and the outer cover, and the two-way cooling unit is located directly above the strong magnetic plate.

[0008] The bidirectional cooling unit includes a horizontal flow shell, a bidirectional water inlet pipe and a bidirectional drainage pipe fixedly connected between the left and right ends of the horizontal flow shell, and a drainage pipe and a water inlet pipe fixedly connected to the ends of the bidirectional water inlet pipe and the bidirectional drainage pipe respectively. The drainage pipe and the water inlet pipe both pass through the outer cover and extend to the outside.

[0009] In the above-mentioned semiconductor thin film physical vapor deposition equipment, through the setting of a bidirectional cooling unit, when cooling the runway area, the direction of water inlet and outlet can be continuously changed alternately, thereby effectively reducing the temperature difference between the water inlet and outlet of the horizontal cooling channel, thereby effectively improving the cooling uniformity of the runway area and making the film formation on the semiconductor surface more uniform.

[0010] As a further improvement of the present application, the upper end of the strong magnetic plate is in contact with the isolation layer, the lower end of the horizontal shell is also fixedly connected to a bottom sealing layer, and the isolation layer and the bottom sealing layer are in contact with each other.

[0011] As a further improvement of the present application, the two-way drainage conduit includes two drainage branches, and the two-way water inlet conduit includes two water inlet branches. Intelligent three-way valves are fixedly connected between the ends of the two drainage branches and between the ends of the two water inlet branches. The third ports of the two intelligent three-way valves are fixed and connected to the drainage main pipe and the water inlet main pipe respectively.

[0012] As a further improvement of the present application, the two horizontal ports of the two intelligent three-way valves are not opened at the same time, and the opening directions of the two intelligent three-way valves are opposite, the drainage branch is close to the bottom of the horizontal flow shell, and the water inlet branch is close to the top of the horizontal flow shell.

[0013] As a further improvement of the present application, a liquid pushing unit is also provided at the bidirectional cooling unit, which includes a liquid pushing plate slidably connected to the inside of the horizontal shell, two electric slide rails fixedly connected to the top of the horizontal shell, and an electromagnetic strip installed between the two electric slide rails. The electromagnetic strip corresponds to the liquid pushing plate. The liquid pushing plate includes a magnetic sensitive plate and a fixed connection to the lower end of the magnetic sensitive plate. There is magnetic attraction between the magnetic sensitive plate and the electromagnetic strip, and the isolation layer is made of magnetic isolation material.

[0014] As another improvement of the present application, the conical panel includes two triangular liquid-dipping flaps and an electric push rod located between the two triangular liquid-dipping flaps. The triangular liquid-dipping flap includes a positioning section fixedly connected to the magnetic plate, a liquid-dipping section located below the positioning section, and an adaptive section fixedly connected between the positioning section and the liquid-dipping section. A deflection shaft is provided between the ends of the positioning section and the liquid-dipping section close to the electric push rod, and the deflection shaft is rotatably connected to the positioning section and fixedly connected to the liquid-dipping section.

[0015] As another improved supplement to the present application, the outer ends of the two deflection shafts are fixedly connected to a plurality of ball head rods distributed in a linear array, and the lower end of the electric push rod is fixedly connected to a common push circular bar. In a top-down view, the multiple common push circular bars on both sides are staggered with each other, and in a front-view view, the common push circular bars on both sides cross each other, and the ends of both cross the center line of the common push circular bars, and the common push circular bars are in contact with the ends of multiple ball head rods at the same time.

[0016] As another improved supplement of the present application, the adaptive section is an elastic structure, the liquid-discharging section is a hard heat-conducting structure, and the bottom of the liquid-discharging section is flush with the bottom of the advection shell.

[0017] In summary, through the setting of the two-way cooling unit, when cooling the runway area, the direction of water inlet and outlet can be continuously changed alternately, thereby effectively reducing the temperature difference between the water inlet and outlet of the horizontal cooling channel, thereby effectively improving the cooling uniformity of the runway area, and making the film formation on the semiconductor surface more uniform; in addition, with the function of the liquid pusher plate, on the one hand, when changing the water inlet and outlet directions, the coolant in the flow channel can be pushed to assist in the discharge of the coolant, and on the other hand, the newly incoming cooling water and the coolant that has absorbed heat can be isolated, thereby making the cooling speed of the runway area faster, making it less likely that the local temperature in this area is too high; in addition, the liquid pusher plate also disturbs the junction of the newly incoming and heat-absorbing coolant, thereby making the temperature transition at the junction more natural, effectively avoiding the occurrence of local excessive temperature differences, and maintaining stable and uniform formation of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a perspective view of the first embodiment of the present application;

[0019] Figure 2 This is a schematic diagram of the first embodiment of the present application when opening and placing a semiconductor to be processed;

[0020] Figure 3 This is a front cross-sectional view of the first embodiment of the present application;

[0021] Figure 4 A three-dimensional diagram of a target assembly according to a first embodiment of the present application;

[0022] Figure 5 Exploded views of the target assembly according to the first and second embodiments of the present application;

[0023] Figure 6 3D diagrams of the bidirectional cooling units according to the first and second embodiments of the present application;

[0024] Figure 7 This is a bottom perspective view of the bidirectional cooling unit according to the first and second embodiments of the present application;

[0025] Figure 8 A perspective view of a liquid pusher plate according to a second embodiment of the present application;

[0026] Figure 9 A perspective view of a liquid pusher plate according to a third embodiment of the present application;

[0027] Figure 10 This is a front view of a liquid pusher plate according to a third embodiment of the present application;

[0028] Figure 11 This is a schematic top view of two deflection axes of the third embodiment of the present application;

[0029] Figure 12 This is a cross-sectional schematic diagram of the liquid pusher plate of the third embodiment of the present application during liquid removal;

[0030] Figure 13 This is a partial cross-sectional schematic diagram of the liquid pusher plate of the third embodiment of the present application during liquid removal.

[0031] Description of the numbers in the figure:

[0032] 1 control cabinet, 21 loading box, 22 sputtering box, 23 unloading chamber, 24 transition channel, 201 box door, 3 pallet, 4 conveyor belt, 5 target assembly, 501 handle, 502 strong magnetic plate, 503 isolation layer, 51 base, 52 target, 53 outer cover, 6 two-way cooling unit, 601 drainage main pipe, 602 water inlet main pipe, 61 horizontal flow shell, 62 drainage branch pipe, 63 water inlet branch pipe, 64 intelligent three-way valve, 65 bottom seal layer, 7 liquid push plate, 71 magnetic plate, 72 cone panel, 721 positioning section, 722 liquid diversion section, 723 adaptive section, 73 electric push rod, 701 deflection axis, 702 ball head rod, 703 common push round bar, 81 electric slide rail, 82 electromagnetic bar. DETAILED DESCRIPTION

[0033] Two implementation modes of the present application are described in detail below with reference to the accompanying drawings.

[0034] The first implementation method:

[0035] Figure 1-Figure 2 As shown, a semiconductor thin film physical vapor deposition device includes a control cabinet 1, and a loading box 21, a sputtering box 22 and a discharge chamber 23 are fixedly installed on the upper end of the control cabinet 1 from left to right. A transition channel 24 is fixedly connected between the loading box 21 and the sputtering box 22, and between the sputtering box 22 and the discharge chamber 23. The two transition channels 24 connect the loading box 21, the sputtering box 22 and the discharge chamber 23. The upper ends of the loading box 21 and the discharge chamber 23 are sealed with a box door 201. Figure 3 The inner cavities of the loading box 21, the sputtering box 22 and the unloading chamber 23 are all fixedly installed with conveyor belts 4, and the ends of the three conveyor belts 4 extend into the corresponding transition channels 24. The upper end of the conveyor belt 4 in the loading box 21 is fixedly connected to the tray 3, and the upper end of the tray 3 is provided with a placement groove. The upper end of the sputtering box 22 is fixedly connected to three target material assemblies 5, and the lower ends of the three target material assemblies 5 pass through the sputtering box 22 and extend into the inside of the sputtering box 22. When coating, the target semiconductor is first placed in the tray 3 in the loading box 21, and then the box door 201 is closed. After that, the conveyor belt 4 in the loading box 21 works to transfer the tray 3 containing the semiconductor to the conveyor belt 4 in the sputtering box 22, and under the action of the conveyor belt 4 inside it, it is transferred to the bottom of the target material assembly 5, and coating can be started. When the coating is completed, the conveyor belt 4 transfers the tray 3 containing the semiconductor to the unloading chamber 23, and then the box door 201 is opened to take out the coated semiconductor to complete the coating.

[0036] It is worth noting that the operations of vacuuming and filling with argon gas during the coating process are well-known existing technologies, and therefore will not be described in detail here.

[0037] like Figure 4-Figure 5The target assembly 5 includes a base 51 fixedly connected to the sputtering box 22, a target 52 fixedly connected to the lower end of the base 51 by bolts, and an outer cover 53 sealed and fixed to the upper end of the base 51. Two handles 501 are also fixedly connected to the upper end of the base 51. The outer cover 53 is located between the two bases 51. A rectangular through groove is cut at the upper end of the base 51. A strong magnetic plate 502 is fixedly connected to the upper end of the target 52. The strong magnetic plate 502 is located in the rectangular through groove. An isolation layer 503 is fixedly connected to the mouth of the rectangular through groove. A two-way cooling unit 6 is provided in the space between the base 51 and the outer cover 53. The two-way cooling unit 6 is located directly above the strong magnetic plate 502.

[0038] like Figure 6-Figure 7 The bidirectional cooling unit 6 includes a horizontal flow shell 61, a bidirectional water inlet conduit and a bidirectional drainage conduit fixedly connected between the left and right ends of the horizontal flow shell 61, and a drainage main pipe 601 and a water inlet main pipe 602 fixedly connected to the ends of the bidirectional water inlet conduit and the bidirectional drainage conduit respectively. The drainage main pipe 601 and the water inlet main pipe 602 both pass through the outer cover 53 and extend to the outside. The bidirectional drainage conduit includes two drainage branches 62, and the bidirectional water inlet conduit includes two water inlet branches 63. An intelligent three-way valve 64 is fixedly connected between the ends of the two drainage branches 62 and between the ends of the two water inlet branches 63. The third ports of the two intelligent three-way valves 64 are fixed and communicated with the drainage main pipe 601 and the water inlet main pipe 602 respectively. The two horizontal ports of the two intelligent three-way valves 64 are not opened at the same time, and the opening directions of the two intelligent three-way valves 64 are opposite, thereby effectively ensuring that the water inlet and water outlet are separated on both sides and are not located on the same side, thereby effectively avoiding the difficulty of some water in circulating with the outside world, resulting in dead water. At the same time, the coolant moves a certain path in the horizontal shell 61 before being discharged, thereby improving its utilization rate. The drainage branch pipe 62 is close to the bottom of the horizontal shell 61, and the water inlet branch pipe 63 is close to the top of the horizontal shell 61.

[0039] During the vapor deposition of the thin film, the two intelligent three-way valves 64 open two openings in different directions respectively, so that the drainage branch pipe 62 and the water inlet branch pipe 63 on different sides are connected to the interior of the advection shell 61. At this time, the coolant can be introduced through the water inlet main pipe 602, and the coolant enters the advection shell 61 along the water inlet branch pipe 63 and spreads in the advection shell 61. It never completely covers the area above the runway area and directly exchanges heat with the target material 52 and the strong magnetic plate 502 therein to achieve a cooling effect. Then, at regular intervals, the opening directions of the two intelligent three-way valves 64 are controlled to be swapped, thereby realizing the exchange of the water inlet side and the water outlet side of the two-way cooling unit 6, so that the flow direction of the coolant therein is reversed. During the entire coating process, the water inlet side and the water outlet side are continuously controlled to alternate, thereby effectively reducing the temperature difference between the water inlet side and the water outlet side caused by the heat absorption of the coolant, making the temperatures on both sides tend to be consistent, greatly improving the cooling uniformity, making the target material 52 less likely to be affected, and effectively maintaining the stability of the coating process and the uniformity of the film formation.

[0040] Among them, the frequency of switching the opening directions of the two intelligent three-way valves 64 can be set according to actual needs, for example, switching once every 30 seconds, and within the switching interval, the liquid inlet speed is adaptively regulated so that the newly introduced coolant can fill the corresponding chamber within the switching interval. Therefore, the faster the switching interval, the faster the corresponding liquid inlet speed, that is, the higher the cooling efficiency.

[0041] The upper end of the strong magnetic plate 502 is in contact with the isolation layer 503, and the lower end of the horizontal shell 61 is also fixedly connected to the bottom sealing layer 65. The isolation layer 503 and the bottom sealing layer 65 are in contact with each other. Through the bottom sealing layer 65, the horizontal shell 61 as a whole forms an independent cooling flow channel, so that after the cooling water enters the horizontal shell 61, it will not directly contact the isolation layer 503, thereby effectively preventing the cooling liquid from penetrating into the strong magnetic plate 502 along the connection between the isolation layer 503 and the base 51, thereby effectively preventing the strong magnetic plate 502 and the target material 52 from being easily affected by contact with water during thin film deposition. The stability of the magnetron sputtering process.

[0042] It is worth noting that the bottom sealing layer 65 is an optional setting. In the case of ensuring the sealing between the isolation layer 503 and the base 51, the bottom sealing layer 65 may not be provided.

[0043] In summary, through the setting of the bidirectional cooling unit 6, when cooling the runway area, the direction of water inlet and outlet can be continuously changed alternately, thereby effectively reducing the temperature difference between the water inlet and outlet of the horizontal cooling channel, thereby effectively improving the cooling uniformity of the runway area and making the film formation on the semiconductor surface more uniform.

[0044] The second implementation method:

[0045] This embodiment is based on the first embodiment, with a new fluid pushing unit, and the rest of the parts remain the same as the first embodiment.

[0046] like Figure 6-Figure 7 The bidirectional cooling unit 6 is also provided with a liquid pushing unit, which includes a liquid pushing plate 7 slidably connected to the inside of the horizontal shell 61, two electric slide rails 81 fixedly connected to the top of the horizontal shell 61, and an electromagnetic strip 82 installed between the two electric slide rails 81. The electromagnetic strip 82 corresponds to the liquid pushing plate 7, as shown in FIG. Figure 8 The liquid pushing plate 7 includes a magnetic plate 71 and a conical panel 72 fixedly connected to the lower end of the magnetic plate 71. There is a magnetic attraction between the magnetic plate 71 and the electromagnetic strip 82. When in use, the electromagnetic strip 82 can be controlled to move by the electric slide 81. Under the action of the magnetic attraction, the liquid pushing plate 7 is driven to move accordingly, thereby achieving the effect of pushing liquid. At the same time, the liquid pushing plate 7 can divide the interior of the horizontal flow shell 61 into two chambers, so that the cooling water of the two liquid inflows can be isolated to a certain extent and not easily excessively mixed. It can effectively ensure the utilization rate of the coolant, and can also effectively ensure that the coolant after absorbing heat can be fully discharged from the horizontal flow shell 61, thereby achieving full circulation and reducing the occurrence of dead water. The isolation layer 503 is made of magnetic isolation material, so that the magnetic field between the electromagnetic strip 82 and the liquid pushing plate 7 and the magnetic field at the strong magnetic plate 502 are not easily interfered with each other.

[0047] The moving direction of the electromagnetic strip 82 is consistent with the direction of the liquid inlet. When the liquid inlet side and the liquid outlet side are switched, the moving direction is also switched to assist the coolant after absorbing heat to be discharged from the horizontal flow shell 61.

[0048] The third implementation method:

[0049] This embodiment further improves the fluid pushing unit based on the first embodiment, and the rest of the parts remain consistent with the first embodiment.

[0050] like Figure 9-10The cone panel 72 includes two triangular liquid-discharging flaps and an electric push rod 73 located between the two triangular liquid-discharging flaps. The triangular liquid-discharging flap includes a positioning section 721 fixedly connected to the magnetic plate 71, a liquid-discharging section 722 located below the positioning section 721, and an adaptive section 723 fixedly connected between the positioning section 721 and the liquid-discharging section 722. The adaptive section 723 is an elastic structure, the liquid-discharging section 722 is a hard heat-conducting structure, and the bottom of the liquid-discharging section 722 is flush with the bottom of the horizontal shell 61, so that the electric push rod 73 is fixedly connected to the magnetic plate 71. When the push rod 73 is not moving, the two chambers formed by the separation of the horizontal shell 61 by the lower end of the cone panel 72 are not connected to each other. A deflection shaft 701 is provided between the end of the positioning section 721 and the end of the liquid-discharging section 722 close to the electric push rod 73. The deflection shaft 701 is rotatably connected to the positioning section 721 and fixedly connected to the liquid-discharging section 722. The outer ends of the two deflection shafts 701 are fixedly connected to a plurality of ball head rods 702 distributed in a linear array. The lower end of the electric push rod 73 is fixedly connected to a common push round bar 703. Figure 11 In a top-down view, the multiple co-pushing round bars 703 on both sides are staggered. In a front-view view, the co-pushing round bars 703 on both sides cross each other, and the ends of both cross the center line of the co-pushing round bars 703. The co-pushing round bars 703 are in contact with the ends of multiple ball head rods 702 at the same time. Figure 12-13 During cooling, when the electric push rod 73 is controlled to extend, the common push round bar 703 can be moved downward with the action of the electric push rod 73, and then the two ball head rods 702 can be smoothly pressed, and then the deflection shaft 701 drives the two liquid-diverting sections 722 to rotate oppositely, and then the coolant in the two chambers can be diverted, and at the same time, the bottom of the cone panel 72 is separated from the bottom of the horizontal flow shell 61, and a certain gap is generated. At this time, the coolant in the two chambers can undergo a certain spontaneous exchange. Therefore, when in use, the electric push rod 73 can be controlled to extend or shorten to control its liquid diversion, so that the temperature difference of the coolant on both sides of the liquid push plate 7 is not too large, and the temperature transition is relatively natural, thereby reducing the influence of the liquid push plate 7 on the heat distribution in the horizontal flow shell 61.

[0051] It is worth noting that the length and width of the horizontal flow shell 61 are both greater than those of the target material 52, so that the coolant inside it can fully exchange heat with the target material 52 area. At the same time, when the liquid pushing plate 7 moves to the gap between the inner wall of the liquid discharge side of the horizontal flow shell 61 and the target material 52, the electric push rod is controlled to reset so that the bottom of the liquid pushing plate 7 is flush with the bottom of the horizontal flow shell 61, so that it can fully push the liquid, so that the coolant after absorbing heat can be fully squeezed to the mouth of the water inlet branch pipe 63 and discharged.

[0052] In conjunction with the function of the liquid pushing plate 7, on the one hand, it can push the coolant in the flow channel when changing the water inlet and outlet directions, thereby assisting the discharge of the coolant; on the other hand, it can isolate the newly incoming cooling water and the coolant that has absorbed heat, thereby making the cooling speed of the runway area faster, making it less likely for the area to have local overtemperature; in addition, the liquid pushing plate 7 also disturbs the junction of the newly incoming and heat-absorbing coolant, thereby making the temperature transition at the junction more natural, effectively avoiding the occurrence of local excessive temperature differences, and maintaining stable and uniform molding of the film.

[0053] In view of current actual needs, the protection scope of the above-mentioned implementation mode adopted in this application is not limited to this. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the protection scope of the present invention.

Claims

1. A semiconductor thin film physical vapor deposition device, characterized in that: The invention comprises a control cabinet (1), wherein a loading box (21), a sputtering box (22) and a loading chamber (23) are fixedly installed on the upper end of the control cabinet (1) from left to right in sequence, and transition channels (24) are fixedly connected between the loading box (21) and the sputtering box (22), and between the sputtering box (22) and the loading chamber (23), and the two transition channels (24) are connected to the loading box (21), the sputtering box (22) and the loading chamber (23), and the upper ends of the loading box (21) and the loading chamber (23) are sealed with box doors (201), and the inner cavities of the loading box (21), the sputtering box (22) and the loading chamber (23) are fixedly installed with conveyor belts (4), and the ends of the three conveyor belts (4) extend into the corresponding transition channels (24), and the upper end of the conveyor belt (4) in the loading box (21) is fixedly connected to a tray (3), and the upper end of the tray (3) is provided with a placement groove; The upper end of the sputtering box (22) is fixedly connected to three target assemblies (5), the lower ends of the three target assemblies (5) pass through the sputtering box (22) and extend into the interior of the sputtering box (22), the target assembly (5) comprises a base (51) fixedly connected to the sputtering box (22), a target (52) fixedly connected to the lower end of the base (51) by bolts, and an outer cover (53) sealed and fixed to the upper end of the base (51), and two handles (50 1), the outer cover (53) is located between the two bases (51), a rectangular through groove is bored at the upper end of the base (51), a strong magnetic plate (502) is fixedly connected to the upper end of the target (52), the strong magnetic plate (502) is located in the rectangular through groove, the mouth of the rectangular through groove is fixedly connected to an isolation layer (503), a two-way cooling unit (6) is provided in the space between the base (51) and the outer cover (53), and the two-way cooling unit (6) is located directly above the strong magnetic plate (502); The bidirectional cooling unit (6) comprises a horizontal flow shell (61), a bidirectional water inlet conduit and a bidirectional drainage conduit fixedly connected between the left and right ends of the horizontal flow shell (61), and a drainage main pipe (601) and a water inlet conduit (602) fixedly connected to the ends of the bidirectional water inlet conduit and the bidirectional drainage conduit, respectively. The drainage main pipe (601) and the water inlet conduit (602) both penetrate the outer cover (53) and extend to the outside. The two-way drainage conduit comprises two drainage branches (62), and the two-way water inlet conduit comprises two water inlet branches (63). An intelligent three-way valve (64) is fixedly connected between the ends of the two drainage branches (62) and between the ends of the two water inlet branches (63). The third ports of the two intelligent three-way valves (64) are respectively fixed to and communicated with the drainage main pipe (601) and the water inlet main pipe (602). The two horizontal ports of the two intelligent three-way valves (64) are not opened at the same time, and the opening directions of the two intelligent three-way valves (64) are opposite. The drainage branch pipe (62) is close to the bottom of the horizontal flow shell (61), and the water inlet branch pipe (63) is close to the top of the horizontal flow shell (61).

2. The semiconductor thin film physical vapor deposition device according to claim 1, characterized in that: The upper end of the strong magnetic plate (502) is in contact with the isolation layer (503), the lower end of the horizontal shell (61) is also fixedly connected with a bottom sealing layer (65), and the isolation layer (503) and the bottom sealing layer (65) are in contact with each other.

3. The semiconductor thin film physical vapor deposition equipment according to claim 1, characterized in that: The bidirectional cooling unit (6) is further provided with a liquid pushing unit, which includes a liquid pushing plate (7) slidably connected to the inside of the horizontal flow shell (61), two electric slide rails (81) fixedly connected to the top of the horizontal flow shell (61), and an electromagnetic strip (82) installed between the two electric slide rails (81), wherein the electromagnetic strip (82) corresponds to the liquid pushing plate (7), and the liquid pushing plate (7) includes a magnetic sensitive plate (71) and a conical panel (72) fixedly connected to the lower end of the magnetic sensitive plate (71), and there is a magnetic attraction between the magnetic sensitive plate (71) and the electromagnetic strip (82), and the isolation layer (503) is made of a magnetic isolation material.

4. The semiconductor thin film physical vapor deposition equipment according to claim 3, characterized in that: The cone panel (72) comprises two triangular liquid-discharging flaps and an electric push rod (73) located between the two triangular liquid-discharging flaps. The triangular liquid-discharging flap comprises a positioning section (721) fixedly connected to the magnetically sensitive plate (71), a liquid-discharging section (722) located below the positioning section (721), and an adaptive section (723) fixedly connected between the positioning section (721) and the liquid-discharging section (722). A deflection shaft (701) is provided between the ends of the positioning section (721) and the liquid-discharging section (722) close to the electric push rod (73). The deflection shaft (701) is rotatably connected to the positioning section (721) and fixedly connected to the liquid-discharging section (722).

5. The semiconductor thin film physical vapor deposition equipment according to claim 4, characterized in that: The outer ends of the two deflection shafts (701) are fixedly connected to a plurality of ball head rods (702) distributed in a linear array, and the lower end of the electric push rod (73) is fixedly connected to a common push round bar (703). In a top-down view, the plurality of common push round bars (703) on both sides are staggered with each other. In a front-view view, the common push round bars (703) on both sides cross each other, and the ends of both cross the center line of the common push round bar (703). The common push round bar (703) is in contact with the ends of the plurality of ball head rods (702) at the same time.

6. The semiconductor thin film physical vapor deposition equipment according to claim 5, characterized in that: The adaptive section (723) is an elastic structure, the liquid-discharging section (722) is a hard heat-conducting structure, and the bottom of the liquid-discharging section (722) is flush with the bottom of the advection shell (61).

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