Semiconductor device manufacturing method and manufacturing system

Abstract

An embodiment of the present application provides a method and system for manufacturing a semiconductor device. The manufacturing system for semiconductor devices includes a controller and a light capture and manipulation device. The controller is configured to determine the target defect on the surface of the wafer and the position of the target defect based on the defect distribution map of the wafer surface and the defect type of the defect in the defect distribution map. The light capture and manipulation device is coupled to the controller and is configured to use a localized light beam of optical tweezers to capture and move target particles to repair the target defect. In this way, based on the determination of the target defect on the surface of the wafer, the localized light beam of optical tweezers emitted by the light capture and manipulation device is used to capture and move target particles at the micrometer level or even the nanometer level, so as to achieve precise repair of the target defect.

Description

Technical Field

[0001] The present application relates to the field of semiconductor device technology, and in particular to a method and system for manufacturing a semiconductor device. Background Art

[0002] Power semiconductor devices play a vital role in modern electronic devices and are widely used in power management, automotive electronics, industrial control, and other fields. With technological advancements, the performance and reliability requirements of power semiconductor devices continue to increase, especially in high-power and high-frequency applications. During the manufacturing process of power semiconductor devices, wafer defects such as vacancies, dislocations, and impurity atoms are often generated in the wafer due to manufacturing processes. These wafer defects can degrade the performance and reliability of power semiconductor devices. Summary of the Invention

[0003] The embodiments of the present application provide a method and system for manufacturing a semiconductor device to achieve precise repair of target defects on the surface of a wafer, thereby at least partially solving the above-mentioned technical problems.

[0004] To achieve the above objectives, according to a first aspect of the present application, a semiconductor device manufacturing system is provided, comprising a controller and an optical capture and manipulation device. The controller is configured to determine a target defect on the surface of the wafer and the location of the target defect based on a defect distribution map of the wafer surface and the defect type of the defect in the defect distribution map. The optical capture and manipulation device is coupled to the controller and configured to capture and move target particles using a localized optical tweezers beam to repair the target defect.

[0005] Optionally, the target defect includes a particle defect and an intrinsic vacancy defect, and the position of the target defect includes a first position where the particle defect is located and a second position where the intrinsic vacancy defect is located;

[0006] The controller is further configured to determine a repair path based on the first position and the second position, wherein the repair path is used to enable the optical tweezers localized beam to simultaneously repair the particle defect and the intrinsic vacancy defect.

[0007] Optionally, the capturing and moving of target particles using a localized optical tweezers beam to repair the target defect includes:

[0008] determining a first target particle, where the first target particle is a particle adjacent to the intrinsic vacancy defect in the repair path;

[0009] The first target particle is captured by the localized optical tweezers beam and moved to a second position where the intrinsic vacancy defect is located, so as to repair the intrinsic vacancy defect.

[0010] Optionally, the method of using a localized optical beam of optical tweezers to capture and move a target particle includes:

[0011] In a case where the particle defect is adjacent to the intrinsic vacancy defect, the particle defect is determined as a second target particle, and the second target particle is captured and moved to a second position where the intrinsic vacancy defect is located using the localized optical tweezers beam to repair the particle defect; and / or

[0012] In the case where the particle defect is spaced from the inherent vacancy defect, the particle defect is determined as a second target particle, and the second target particle is captured and moved to a third position using the localized optical tweezers beam to repair the particle defect; wherein a repaired vacancy defect generated by removing particles adjacent to the particle defect in the repair path is located at the third position.

[0013] Optionally, it also includes:

[0014] an image acquisition device, coupled to the controller, and configured to perform defect detection on the surface of the wafer to obtain a defect distribution map of the surface of the wafer;

[0015] A Raman spectroscopy device is coupled to the controller and is configured to detect the type of defects on the surface of the wafer based on the defect distribution map to determine the defect type of the defect.

[0016] Optionally, it also includes:

[0017] The optical electric field coupling device is configured to use a local electric field to assist the local light beam capture of the optical tweezers and the migration and bonding of the moving target particles.

[0018] Optionally, the optical-electrical field coupling device includes a ferroelectric optical-electrical converter.

[0019] Optionally, the optical tweezers local beam includes a Bessel beam.

[0020] Optionally, the wafer includes a device area and a scribe line area, the scribe line area is located between adjacent device areas, and the target defect is located in the device area.

[0021] According to a second aspect of the present application, a method for manufacturing a semiconductor device is provided, comprising the following steps:

[0022] Determining a target defect on the surface of the wafer and a location of the target defect based on a defect distribution map of the wafer surface and defect types of defects in the defect distribution map;

[0023] The target particles are captured and moved by using a localized optical tweezers beam to repair the target defects.

[0024] In the manufacturing method and manufacturing system of the semiconductor device in the embodiment of the present application, based on the determination of the target defect on the surface of the wafer and the position of the target defect, a localized light beam of optical tweezers emitted by an optical capture and manipulation device is used to capture and move target particles at the micron or even nanometer level, thereby achieving precise repair of the target defect and improving the performance and reliability of semiconductor devices manufactured based on wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic structural diagram of a semiconductor device manufacturing system provided in an exemplary embodiment of the present application;

[0026] Figure 2 A schematic diagram of defects on the surface of a wafer provided in an exemplary embodiment of the present application;

[0027] Figure 3 The figure is a flow chart of a method for manufacturing a semiconductor device provided in an exemplary embodiment of the present application.

[0028] Description of reference numerals:

[0029] 100. Semiconductor device manufacturing system;

[0030] 11. Controller;

[0031] 12. Optical capture and manipulation device; L1, localized optical tweezers beam;

[0032] 13. Image acquisition device;

[0033] 14. Raman spectroscopy device;

[0034] 15. Photoelectric field coupling device;

[0035] 200, wafer;

[0036] S1, first repair path; S2, second repair path. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0038] Figure 1 Schematic diagram of the structure of the semiconductor device manufacturing system provided in the exemplary embodiment of the present application. Figure 1The semiconductor device manufacturing system 100 can be used to manufacture semiconductor devices such as power semiconductor devices, memory devices, or sensors. When the semiconductor device is a power semiconductor device, the power semiconductor device may include one or more of a rectifier diode, a Schottky diode, a bipolar transistor, a power metal-oxide semiconductor field effect transistor (MOSFET), and an insulated gate bipolar transistor.

[0039] The manufacturing process of semiconductor devices generally uses wafer 200 as a substrate. Through various processes such as thin film deposition, doping, photolithography, and etching, circuit structures and functional areas are formed on the surface of wafer 200. The performance of wafer 200 often plays a key role in the performance of semiconductor devices. The semiconductor device manufacturing system 100 of the embodiment of the present application accurately repairs target defects on the surface of wafer 200, improves the performance of wafer 200, and is conducive to improving the performance and reliability of semiconductor devices obtained after processing wafer 200.

[0040] In some embodiments, the wafer 200 includes semiconductor materials, including but not limited to one or more of silicon, silicon carbide, gallium nitride, and gallium arsenide. In some embodiments, the size of the wafer 200 may include 4 inches, 6 inches, 8 inches, 12 inches, or 18 inches.

[0041] The semiconductor device manufacturing system 100 includes a controller 11 and a light capture and manipulation device 12 . The light capture and manipulation device 12 is coupled to the controller 11 .

[0042] The controller 11 is configured to determine target defects on the surface of the wafer 200 and the locations of the target defects based on the defect distribution map on the surface of the wafer 200 and the defect types of the defects in the defect distribution map. Thus, based on the defect distribution map on the surface of the wafer 200, the number of defects on the surface of the wafer 200 and the location of each defect can be determined. Combined with the type of defect at each location, target defects on the surface of the wafer 200 can be screened out.

[0043] In some embodiments, the controller 11 may include a computer and a PLC controller, the computer being coupled to the PLC controller. The computer may include a display screen that can display a defect distribution map. The computer may control the light capture and manipulation device 12 via the PLC controller based on the defect distribution map and the defect types in the defect distribution map.

[0044] The surface of wafer 200 may include the front side of the device to be formed, or the back side of the front side. Accordingly, the defect distribution map may include a first defect distribution map on the front side, or a second defect distribution map on the back side. The types of defects in the defect distribution map may include point defects, line defects, surface defects, and volume defects.

[0045] Point defects can include particle defects and intrinsic vacancy defects. Intrinsic vacancy defects are defects caused by the absence of an atom in the crystal lattice before wafer 200 is processed. Particle defects include interstitial atoms and impurity atoms. Interstitial atoms are additional atoms located in the interstitial positions of the crystal lattice. Impurity atoms are foreign atoms that replace atoms in the crystal lattice or are located in interstitial positions. Line defects include dislocations, which are linear discontinuities in the arrangement of atoms in the crystal lattice. Planar defects include grain boundaries and stacking faults. Bulk defects include holes or bubbles inside the crystal.

[0046] In some embodiments, the target defects may include point defects and line defects. In this way, microscopic defects such as point defects and line defects in the wafer 200 are repaired as target defects to improve the performance of the wafer 200.

[0047] The optical capture and manipulation device 12 is configured to use a localized optical tweezers beam L1 to capture and move target particles to repair the target defect. By identifying the target defect on the surface of wafer 200, the optical tweezers localized beam L1 emitted by the optical capture and manipulation device 12 is used to capture and move micron- or even nanometer-scale target particles, enabling precise repair of the target defect while reducing the risk of thermal damage to wafer 200.

[0048] The principle behind the capture and movement of target particles by the localized optical beam L1 is that when the localized optical beam L1 strikes the target particle, the optical gradient force of the beam L1 traps the target particle near the beam's focal point. The target particle can then be manipulated and moved by changing its direction.

[0049] In traditional repair techniques, ion implantation and annealing can cause thermal damage to the wafer, while chemical mechanical polishing offers low repair accuracy and is only suitable for macroscopic repairs. In the embodiments of this application, the localized optical tweezers beam L1 can capture and move micron- and even nanometer-scale particles, enabling more precise repairs and reducing thermal damage during the repair process.

[0050] In some embodiments, the localized optical tweezers beam L1 comprises a Bessel beam. The Bessel beam's annular structure provides a more uniform energy distribution, reducing the risk of capturing target particles and generating hot spots on the wafer 200 during movement. Furthermore, the central bright spot and annular structure of the Bessel beam generate a strong optical gradient force, ensuring the capture and manipulation of micron- or even nanometer-scale target particles.

[0051] In some embodiments, the optical trapping and manipulation device 12 may include a first laser source and a beam shaping component. The first laser source may include, but is not limited to, a tunable semiconductor laser, so that the localized optical tweezers beam L1 has wavelength tunability, high precision, and stability, while also having low thermal effects to reduce the risk of thermal damage to the wafer 200. The beam shaping component may include one or more of a spatial light modulator, an axicon, a beam expander, and a focusing lens.

[0052] In some embodiments, the target defects include particle defects and inherent vacancy defects, and the locations of the target defects include a first location where the particle defects are located and a second location where the inherent vacancy defects are located. The controller 11 is further configured to determine a repair path based on the first location and the second location, where the repair path is used to allow the optical tweezers localized beam L1 to simultaneously repair the particle defects and the inherent vacancy defects. In this way, when the wafer 200 includes both particle defects and inherent vacancy defects, the optical tweezers localized beam L1 moves along the repair path to simultaneously repair the particle defects and the inherent vacancy defects, thereby improving repair efficiency.

[0053] In some embodiments, when the wafer includes SiC, the intrinsic vacancy defects may include at least one of silicon vacancies and carbon vacancies; the interstitial atoms may include at least one of silicon interstitial atoms and carbon interstitial atoms, and the impurity atoms may include at least one of nitrogen impurity atoms, phosphorus impurity atoms, aluminum impurity atoms, and boron impurity atoms.

[0054] In some embodiments, a target particle is captured and moved using a localized optical tweezers beam L1 to repair a target defect, including: determining a first target particle, the first target particle being a particle adjacent to an intrinsic vacancy defect in a repair path; and using the localized optical tweezers beam L1 to capture and move the first target particle to a second location where the intrinsic vacancy defect is located to repair the intrinsic vacancy defect. After the target particle is captured by the localized optical tweezers beam L1, the target particle is generally moved to a location adjacent to the particle. Therefore, by using the particle adjacent to the intrinsic vacancy defect as the first target particle, the first target particle is moved to the location where the intrinsic vacancy defect is located to repair the intrinsic vacancy defect.

[0055] In some embodiments, the target particle is captured and moved using a localized optical tweezers beam L1, including: when a particle defect is adjacent to an intrinsic vacancy defect, determining the particle defect as a second target particle, capturing and moving the second target particle to a second location where the intrinsic vacancy defect is located using the localized optical tweezers beam L1 to repair the particle defect; and / or, when the particle defect is spaced apart from the intrinsic vacancy defect, determining the particle defect as a second target particle, capturing and moving the second target particle to a third location using the localized optical tweezers beam L1 to repair the particle defect; wherein the repair vacancy defect generated by removing particles adjacent to the particle defect in the repair path is located at the third location. In this way, when a particle defect is adjacent to an intrinsic vacancy defect, the particle defect can be moved to the intrinsic vacancy defect to repair both simultaneously. Furthermore, when the particle defect is spaced apart from the intrinsic vacancy defect, the particles between the particle defect and the intrinsic vacancy defect in the repair path can be gradually moved to repair the particle defect.

[0056] Figure 2 Schematic diagram of defects on the surface of a wafer provided in an exemplary embodiment of the present application. For example, see Figure 2 On the surface of wafer 200, there is a first intrinsic vacancy defect at location A and a first particle defect at location B. The line connecting locations A and B forms a first repair path S1. The first particle defect at location B can be moved to location A using the localized optical tweezers beam S1, thereby simultaneously repairing the first intrinsic vacancy defect at location A and the first particle defect at location B.

[0057] Also, please continue reading Figure 2 , there is a second intrinsic vacancy defect at C, a second particle defect at E, and a particle at D between C and E. The line connecting C and D constitutes the second repair path S2. The particle at D can be first moved to C using the localized optical tweezers beam L1 to form a repaired vacancy defect at D. The second particle defect at E can then be moved to the repaired vacancy defect using the localized optical tweezers beam L1 to achieve repair of the second intrinsic vacancy defect and the second particle defect.

[0058] In some embodiments, in a repair path, the number of particle defects can be the same as the number of inherent vacancy defects, which is conducive to repairing these particle defects and inherent vacancy defects, while also avoiding the generation of new vacancy defects in wafer 200 and reducing the risk of damage to wafer 200.

[0059] In some embodiments, when there are multiple particle defects and multiple intrinsic vacancy defects in a repair path, the repair efficiency of the wafer 200 can be improved.

[0060] In some embodiments, the repair path may include at least one of a straight segment and a curved segment.

[0061] It should be noted that the design of the repair path can be optimized to improve the repair efficiency of the wafer 200. The optimization method of the repair path includes but is not limited to inputting the original repair path into a trained neural network model to obtain an optimized repair path.

[0062] In some embodiments, wafer 200 may include a device region and a scribe lane region, with the scribe lane region located between adjacent device regions. The target defect is located in the device region. Thus, the target defect in the device region is repaired first to mitigate the impact of the target defect on the device to be formed in the device region.

[0063] In some embodiments, when the number of target defects in a device region is greater than or equal to a first number and less than or equal to a second number, the target defects in the device region are repaired using the localized optical tweezers beam L1 to improve the repair efficiency of the localized optical tweezers beam L1. Since the number of target defects in the device region is small, such as one or two, the performance of the device to be formed in the device region is minimal. However, when the number of target defects in the device region is large, such as 100 or more, repairing the target defects in the device region using the localized optical tweezers beam L1 takes a long time.

[0064] In some embodiments, the device region includes a first region and a second region. The number of target defects per unit area in the first region is greater than the number of target defects per unit area in the second region. The target defects in the first region are repaired using a localized optical tweezers beam L1, and then the target defects in the second region are repaired using the localized optical tweezers beam L2. In this way, regions in the device region with a higher concentration of target defects are repaired preferentially.

[0065] In some embodiments, see Figure 1 The semiconductor device manufacturing system 100 further includes an image acquisition device 13 and a Raman spectroscopic device 14 .

[0066] Image acquisition device 13 is configured to perform defect detection on the surface of wafer 200 to obtain a defect distribution map of the surface of wafer 200. Image acquisition device 13 is coupled to controller 11 so that data corresponding to the defect distribution map obtained by image acquisition device 13 can be transmitted to a computer in controller 11. In some embodiments, image acquisition device 13 may include, but is not limited to, a high-resolution camera such as an sCMOS camera.

[0067] Raman spectroscopy device 14 is configured to detect the type of defects on the surface of wafer 200 based on the defect distribution map to determine the defect type. Raman spectroscopy device 14 is coupled to controller 11 so that Raman spectroscopy device 14 can transmit data corresponding to the defect type to the computer of controller 11.

[0068] In some embodiments, wafer 200 may include device regions and scribe lane regions, with the scribe lane regions located between adjacent device regions. Detecting the type of defects on the surface of wafer 200 includes detecting the type of defects in the device regions. Thus, Raman spectroscopy device 14 is configured to prioritize identifying the type of defects in the device regions.

[0069] The Raman spectrometer 14 detects defects on the surface of wafer 200 by emitting a detection laser beam toward the defect on the surface of wafer 200. Most of the photons in the detection laser beam are elastically scattered, while a smaller portion interacts with particles at the defect site, causing energy changes and generating Raman scattering. Surface defects on wafer 200, such as impurities, stress, and structural inhomogeneities, affect the molecular vibration modes of the material, thereby altering the shape, position, or intensity of the Raman spectrum. By detecting these changes, the type of defect can be identified.

[0070] In some embodiments, the Raman spectroscopy device 14 may include a second laser source, a spectrometer, and a detector. The second laser source is configured to emit a detection laser beam to a defect on the surface of the wafer 200. The detector is configured to record the Raman scattering spectrum. The spectrometer is configured to separate and analyze the different wavelengths of the scattered light.

[0071] In some embodiments, the semiconductor device manufacturing system 100 further includes an optical optical field coupling device 15. The optical optical field coupling device 15 is configured to use a local electric field to assist the migration and bonding of target particles captured and moved by the optical tweezers local beam L1. In this way, the local electric field is used in conjunction with the optical tweezers local beam L1 to act on the target particles at the same time, reducing the difficulty of capturing and moving the target particles using the optical tweezers local beam L1. In addition, after the target particle moves to the target position, the local electric field can drive the bonding between the target particle and other atoms, reducing the risk of atomic migration and improving the repair effect.

[0072] In some embodiments, the optical-electrical field coupling device 15 includes a ferroelectric optical-electrical converter, which may include a ferroelectric material layer, and the response wavelength of the ferroelectric material layer may be 800 nm to 1550 nm.

[0073] In some embodiments, the Raman spectrometer 14 can also be used to inspect the repaired target defect to determine whether it has been properly repaired. If the target defect has not been properly repaired, the defect type can be further analyzed and repaired. If the target defect has been repaired, repair of other target defects can be continued, thereby further optimizing the repair effect on the target defect.

[0074] Based on the same inventive concept, an embodiment of the present application also provides a method for manufacturing a semiconductor device. Figure 3Schematic diagram of a method for manufacturing a semiconductor device provided in an exemplary embodiment of the present application. Figure 3 The method for manufacturing a semiconductor device includes the following steps S101 to S102.

[0075] Step S101 : determining a target defect on the surface of the wafer and a location of the target defect based on a defect distribution map on the surface of the wafer and the defect type of the defect in the defect distribution map.

[0076] Step S102: using the localized optical tweezers beam to capture and move the target particles to repair the target defects.

[0077] The beneficial effects of the method for manufacturing a semiconductor device according to the embodiment of the present application are the same as the beneficial effects of the system for manufacturing a semiconductor device, and are not described in detail here.

[0078] In some embodiments, the target defects include particle defects and intrinsic vacancy defects, and the locations of the target defects include a first location where the particle defects are located and a second location where the intrinsic vacancy defects are located. The semiconductor device manufacturing method further includes: determining a repair path based on the first location and the second location, wherein the repair path is configured to allow the localized optical tweezers beam to simultaneously repair the particle defects and the intrinsic vacancy defects. Thus, when the wafer contains both particle defects and intrinsic vacancy defects, the localized optical tweezers beam moves along the repair path to simultaneously repair the particle defects and the intrinsic vacancy defects, thereby improving repair efficiency.

[0079] To sum up, in the manufacturing method and manufacturing system of the semiconductor device of the embodiment of the present application, based on determining the target defect and the position of the target defect on the surface of the wafer, the localized light beam of optical tweezers emitted by the light capture and manipulation device is used to capture and move the target particles at the micron or even nanometer level, thereby achieving precise repair of the target defect and improving the performance and reliability of semiconductor devices manufactured based on wafers.

[0080] The description of the above embodiments is only used to help understand the technical solutions and core ideas of this application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A semiconductor device manufacturing system, characterized in that: include: a controller configured to determine target defects on the surface of the wafer and locations of the target defects based on a defect distribution map of the wafer surface and defect types in the defect distribution map, wherein the target defects include particle defects and intrinsic vacancy defects; an optical capture and manipulation device, coupled to the controller, configured to capture and move target particles on the wafer surface using a localized optical tweezers beam to repair the target defect; as well as The optical electric field coupling device is configured to use a local electric field to assist the local light beam capture of the optical tweezers and the migration and bonding of the moving target particles.

2. The semiconductor device manufacturing system according to claim 1, wherein: The position of the target defect includes a first position where the particle defect is located and a second position where the intrinsic vacancy defect is located; The controller is further configured to determine a repair path based on the first position and the second position, wherein the repair path is used to enable the optical tweezers localized beam to simultaneously repair the particle defect and the intrinsic vacancy defect.

3. The semiconductor device manufacturing system according to claim 2, wherein: The method of capturing and moving target particles using a localized optical tweezers beam to repair the target defect includes: determining a first target particle, where the first target particle is a particle adjacent to the intrinsic vacancy defect in the repair path; The first target particle is captured by the localized optical tweezers beam and moved to a second position where the intrinsic vacancy defect is located, so as to repair the intrinsic vacancy defect.

4. The semiconductor device manufacturing system according to claim 2, wherein: The method of using a localized optical beam of optical tweezers to capture and move target particles comprises: In a case where the particle defect is adjacent to the intrinsic vacancy defect, the particle defect is determined as a second target particle, and the second target particle is captured and moved to a second position where the intrinsic vacancy defect is located using the localized optical tweezers beam to repair the particle defect; and / or In the case where the particle defect is spaced from the inherent vacancy defect, the particle defect is determined as a second target particle, and the second target particle is captured and moved to a third position using the localized optical tweezers beam to repair the particle defect; wherein a repaired vacancy defect generated by removing particles adjacent to the particle defect in the repair path is located at the third position.

5. The semiconductor device manufacturing system according to claim 1, wherein: Also includes: an image acquisition device, coupled to the controller, and configured to perform defect detection on the surface of the wafer to obtain a defect distribution map of the surface of the wafer; A Raman spectroscopy device is coupled to the controller and is configured to detect the type of defects on the surface of the wafer based on the defect distribution map to determine the defect type of the defect.

6. The semiconductor device manufacturing system according to claim 1, wherein: The optical-electrical field coupling device includes a ferroelectric optical-electrical converter.

7. The semiconductor device manufacturing system according to claim 1, wherein: The optical tweezers local beam includes a Bessel beam.

8. The semiconductor device manufacturing system according to claim 1, wherein: The wafer includes a device area and a scribe line area, the scribe line area is located between adjacent device areas, and the target defect is located in the device area.

9. A method for manufacturing a semiconductor device, characterized in that: The steps include: Determining target defects on the surface of the wafer and locations of the target defects based on a defect distribution map on the surface of the wafer and defect types in the defect distribution map, wherein the target defects include particle defects and inherent vacancy defects; The target particles are captured and moved by a localized optical tweezers beam, and the target particles captured and moved by the localized optical tweezers beam are assisted by a localized electric field to migrate and bond, thereby repairing the target defects.

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