Wafer cleaning device, wafer grinding, polishing and cleaning automation system comprising wafer cleaning device and wafer grinding, polishing and cleaning automation method

Abstract

The invention discloses a wafer cleaning device and a wafer grinding, polishing and cleaning automation system and method comprising the wafer cleaning device, and relates to the technical field of semiconductor manufacturing, the wafer cleaning device comprises a cleaning chamber, a cleaning assembly, a spin-drying assembly, a fluid shielding flow guide cover and a clean air supply unit, and the fluid shielding flow guide cover can be switched between a spin-coating position and a spin-drying position; the spin-coating position leaves the inlet of the cleaning chamber, and the spin-drying position blocks the inlet of the cleaning chamber; the clean air supply unit is used for conveying shielding fluid to the fluid shielding flow guide cover; the fluid shielding flow guide cover comprises an outer flow guide ring of an inverted frustum structure and an inner flow guide ring of a positive frustum structure, the bottom face of the inner flow guide ring is closed, a slit fluid acceleration ring is formed between the outer flow guide ring and the inner flow guide ring, a gap is formed between the bottom of the outer flow guide ring and the bottom of the inner flow guide ring, and a slit fluid jet flow ring is formed and used for forming an acceleration jet flow shielding ring to shield chemical escape. By arranging the fluid shielding flow guide cover and the clean air supply unit, a plurality of airflow shielding rings are formed, and escape of chemical agents is effectively prevented.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer cleaning device and an automated wafer polishing and cleaning system and method comprising the same. Background Art

[0002] In the semiconductor wafer manufacturing process, spin-coating, cleaning, and drying are critical steps that impact yield. Traditional equipment typically separates cleaning and drying processes, resulting in large space requirements and inefficient process integration. Especially during high-speed drying, chemical wastewater can easily splash and escape, polluting the chamber environment and potentially causing cross-contamination. Furthermore, volatile gases from chemical agents can corrode equipment components and interfere with cleanliness control. Existing flow-guiding structures struggle to simultaneously address process openness and sealing requirements. Summary of the Invention

[0003] The purpose of the present invention is to provide a wafer cleaning device and an automated wafer polishing and cleaning system and method comprising the same, so as to solve the problems existing in the above-mentioned prior art and prevent the escape of chemical agents.

[0004] To achieve the above object, the present invention provides the following solutions: A wafer cleaning device, comprising: Cleaning chamber; Cleaning components for spin-coating wafers using various chemicals and detergents; A drying assembly is provided in the cleaning chamber and is used to dry the cleaned wafers; A fluid shielding guide cover is arranged to be raised and lowered above the cleaning chamber and can be switched between a spin coating position and a spin drying position; The spin coating position is the raised state of the fluid shielding guide cover, which is used to clear the entrance of the cleaning chamber so that the cleaning component can perform spin coating cleaning on the wafer; The drying position is the lowered state of the fluid shielding guide cover, which is used to block the entrance of the cleaning chamber to prevent the waste liquid from escaping during the drying process; A clean air supply unit is provided above the fluid shielding guide cover and is used to supply shielding fluid to the fluid shielding guide cover; Among them, the fluid shielding guide cover includes an outer guide ring and an inner guide ring that are connected to each other. The outer guide ring is an inverted frustum structure, which is used to guide the clean fluid to form a clean fluid shielding ring on the periphery. The inner guide ring is a right frustum structure and the bottom surface is closed. A slit fluid acceleration ring is formed between the outer guide ring and the inner guide ring. There is a gap at the bottom of the outer guide ring and the inner guide ring to form a slit fluid jet ring, which is used to form an acceleration jet shielding ring to shield chemical escape.

[0005] In an exemplary embodiment, the cleaning chamber is surrounded by a waste liquid collector and a waste liquid guide cover, wherein: The waste liquid collector is arranged around the spin-drying component and includes N collection areas independently arranged from the outside to the inside, where N is an integer greater than or equal to 1, and different collection areas are used to collect different chemical cleaning waste liquids; The waste liquid guide cover has N annular guide channels connected to the collection areas in a one-to-one correspondence, and the inlets of the N annular guide channels are arranged in sequence from top to bottom; The lifting drive mechanism is used to drive the waste liquid guide cover to move up and down so that the entrances of the N annular guide channels are respectively aligned with the wafer clamping area of ​​the spin-drying component.

[0006] In an exemplary embodiment, the spin-drying assembly includes a claw clamping mechanism for driving the wafer to rotate at high speed under the drive of a rotation drive mechanism.

[0007] In an exemplary embodiment, the jaw clamping mechanism includes a drive assembly, a transmission assembly, and a clamping jaw; The clamping claw comprises a clamping structure, the clamping structure is provided with a clamping groove, and the clamping groove comprises a first side wall and a second side wall arranged opposite to each other; The clamping groove only abuts against the edge of the wafer to complete the clamping of the wafer, and in the clamping state: A first gap is formed between the first sidewall and a surface of the wafer close to the first sidewall; and / or, a second gap is provided between the second sidewall and a surface of the wafer close to the second sidewall; The edge of the wafer refers to the edge that can reflect the thickness of the wafer; The driving assembly is in driving connection with the transmission assembly, and multiple groups of the transmission assemblies are radially arranged around the driving assembly. The clamping claws are in driving connection with one end of the transmission assembly away from the driving assembly. Multiple clamping claws surround and form a wafer clamping area for the wafer. The transmission assembly is used to drive the clamping claws to rotate under the drive of the driving assembly, so that the clamping groove approaches and moves away from the wafer clamping area. When the clamping groove approaches the wafer clamping area, it is used to clamp the wafer, and when the clamping groove moves away from the wafer clamping area, it is used to release the wafer.

[0008] In an exemplary embodiment, the cleaning assembly includes a spin coating assembly and a spray assembly, the spin coating assembly includes a chemical tube and a lotion tube, and a spin coating swing arm that drives the chemical tube and the lotion tube close to and away from the wafer; the spray assembly includes an upper spray pipe and a lower spray pipe, which are used to spray clean the upper surface and lower surface of the wafer, respectively.

[0009] The present invention also provides an automated wafer polishing and cleaning system, comprising a frame and integrated thereon: Loading unit, used for scanning, identifying and storing dry wafer carriers; Positioning unit, used for flipping and positioning of single wafers; Processing unit, used for double-sided polishing of wafers; The first picking unit is used for transporting dry wafers; Ultrasonic cleaning device, used to achieve ultrasonic cleaning with ultrasonic energy density curve control; The above-mentioned wafer cleaning device is used for wafer spin coating, rinsing and centrifugal drying; The second pick-up unit is used for transporting wet wafers; Unloading unit, used for scanning and loading dry wafer carriers; The control unit coordinates each unit to execute the full closed-loop process of wafer dry feeding → polishing and grinding → ultrasonic cleaning → chemical cleaning and drying → dry discharge.

[0010] In an exemplary embodiment, the ultrasonic cleaning device includes: Overflow tank, used to contain and guide medium-temperature liquid water; A wafer positioning mechanism is provided in the overflow trough, used for vertically fixing the wafer to be cleaned and cooperating with the wafer to form a vertical laminar flow guide structure; a medium-temperature fluid supply system for supplying medium-temperature liquid water to the overflow tank and maintaining vertical laminar overflow; Quartz glass laser tunnel, serving as an optical channel and window; The laser scanning module is configured to scan the interior of the medium-temperature liquid water through the optical channel and the window to form a controllable cavitation bubble flow.

[0011] In an exemplary embodiment, the laser scanning module includes: Three-axis galvanometer laser, the scanning range covers the wafer projection area and the focal depth is adjustable by ±50mm; Energy adjustment device, dynamically controlling the laser focusing energy density distribution curve; Energy output proportional controller, achieving 10%-100% continuous power adjustment.

[0012] The present invention also provides an automated method for wafer polishing and cleaning, which uses the above-mentioned automated system and includes the following steps: S1. Scan the QR code on the dry wafer and bind the information. S2 wafer positioning after transfer to the processing unit for double-sided polishing; S3. After grinding, the wafer is sent to ultrasonic cleaning; S4. After ultrasonic cleaning, the wafer is sent to the wafer cleaning device for spin coating, rinsing and centrifugal drying; S5. Dry wafer discharge.

[0013] In an exemplary embodiment, the ultrasonic cleaning in step S3 specifically includes the following steps: S301 generates a vertical laminar flow in the cleaning fluid flow channel in a medium temperature liquid water environment; S302. By laser scanning the liquid water to form a three-dimensional cavitation zone, the generation of cavitation bubble flow is controlled; S303 dynamically adjusts the laser energy density distribution curve to control the size and density of cavitation bubbles; S304. Customize the bubble collapse energy curve based on the cleaning stage to remove pollutants of different particle sizes in stages; S305. Remove pollutants through laminar overflow.

[0014] In an exemplary embodiment, the dynamically adjusting the laser energy density distribution curve in step S303 includes: The bubble density can be adjusted by controlling the density and staggered distribution of the laser scanning path; The bubble size is controlled by adjusting the focus energy ratio.

[0015] In an exemplary embodiment, the phased removal of pollutants in step S304 includes: In the initial stage, a large proportion of large bubbles is configured to remove large particle pollutants; The mid-stage is configured with a medium bubble mixing ratio to remove medium particle contaminants; A high proportion of small bubbles is configured in the later stage to remove residual small particle pollutants.

[0016] Compared with the prior art, the present invention has achieved the following technical effects: 1. By integrating the cleaning and drying components and configuring a liftable fluid shielding shroud, seamless switching between the spin-coating cleaning and drying processes is achieved. In the spin-coating position (raised), the shroud opens the chamber entrance for wafer processing. In the drying position (lowered), it closes the entrance, creating a physical barrier, preventing waste liquid splashes and escaping at the source, significantly reducing the risk of cross-contamination. The integrated cleaning and drying functions in a single device significantly reduce the equipment's footprint. The liftable shroud design avoids the mechanical complexity of traditional isolation valves, reducing failure rates and maintenance costs, while also meeting the semiconductor manufacturing industry's demand for upgraded, efficient, and compact equipment.

[0017] 2. The outer guide ring (inverted frustum) and the inner guide ring (positive frustum + closed bottom surface) of the guide cover work together: The outer guide ring guides the airflow of the clean air supply unit to form a clean fluid shielding ring, covering the outer periphery of the chamber; The narrow gap between the inner and outer rings accelerates the pressurized airflow speed; The narrow fluid jet ring generated by the bottom gap produces an accelerated jet shielding ring, forming a dynamic air curtain barrier around the top of the wafer, effectively blocking the escape path of chemical volatilization during the spin coating stage.

[0018] 3. During spin coating cleaning (with the guide cover rising): the accelerated jet shielding ring forms a low-negative-pressure spin coating working area between the wafer and the guide cover, confining the splashing agent / washing agent in the area and guiding it to be discharged downward to avoid corrosion of other parts of the equipment; During high-speed drying (the guide hood descends): the accelerated jet shielding ring strengthens the formation of a high-negative-pressure working area for drying, and the high-speed airflow quickly removes residual chemicals / lotions from the wafer surface to prevent secondary contamination. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 A schematic structural diagram of a wafer cleaning device disclosed in a specific embodiment of the present invention; Figure 2 for Figure 1 Schematic diagram of the structure of the fluid shielding guide cover; Figure 3 for Figure 2 Structural diagram from another angle; Figure 4 for Figure 1 Structural diagram from another angle; Figure 5 for Figure 1 Schematic diagram of the fluid shielding guide cover in the spin coating position; Figure 6 for Figure 1 Schematic diagram of the fluid shield guide cover in the drying position; Figure 7 for Figure 5 and Figure 6 A schematic diagram of the structure of the claw clamping mechanism; Figure 8 for Figure 7 A schematic diagram of the structure of the clamping claws; Figure 9 for Figure 8 Structural schematic diagram of the middle clamping structure; Figure 10It is a schematic diagram of the assembly relationship between the clamping structure and the wafer; Figure 11 for Figure 9 The main view; Figure 12 for Figure 9 Structural diagram from another perspective; Figure 13 for Figure 9 Schematic diagram of the fluid principle of the separation splitting in a cross-sectional view; Figure 14 Schematic diagram of the fluid acceleration principle in the clamping area of ​​the clamping jaws; Figure 15 for Figure 7 Schematic diagram of the connection structure of the middle jaw bearing assembly, transmission assembly, and drive assembly; Figure 16 for Figure 7 A schematic diagram of the connection structure of another set of claw bearing components, transmission components, and drive components; Figure 17 for Figure 7 Schematic diagram of the wafer clamping state; Figure 18 for Figure 17 Side view of Figure 19 A schematic structural diagram of an automated wafer grinding, polishing and cleaning system disclosed in a specific embodiment of the present invention; Figure 20 for Figure 19 A schematic structural diagram of an ultrasonic cleaning device; Figure 21 for Figure 20 Schematic diagram of the structure of the warm fluid supply system, quartz glass laser tunnel and laser scanning module; Figure 22 For wafer cleaning equipment Figure 19 Schematic diagram of the assembly structure in; in: 0. Wafer; 1. Frame; 2. Loading unit; 3. Positioning unit; 4. Processing unit; 5. First picking unit; 6. Ultrasonic cleaning device; 601. Overflow tank; 602. Wafer positioning mechanism; 603. Medium-temperature fluid supply system; 604. Quartz glass laser tunnel; 605. Laser scanning module; 606. Overflow channel; 607. Drain pipe; 608. Water collection tank; 609. Supporting part; 610. Pressing part; 611. Wafer support frame; 612. Wafer stopper; 613. Current limiting structure; 614. Diversion tunnel; 615. Cavitation zone in medium-temperature liquid water; 7. Wafer cleaning device; 701. Fluid shielding guide cover; 7011. Outer guide ring; 7012. Inner guide ring; 7013. Clean fluid shielding ring; 7014. Slit fluid acceleration ring; 7015. Slit fluid jet ring; 7016. Acceleration jet shielding ring; 7017. Spin coating low negative pressure working area; 7018. Drying high negative pressure working area; 702. Clean air supply unit; 703. Claw clamping mechanism; 704. Drive assembly; 705. Transmission assembly; 706. Clamping claw; 707. Clamping structure; 708. Clamping groove; 709. First side wall; 7 09a, first splitter / splitter guide area; 709b, first clamping lift surface; 709c, first diffusion area; 710, second sidewall; 710a, second splitter / splitter guide area; 710b, second clamping lift surface; 710c, second diffusion area; 711, first gap; 712, second gap; 713, trough bottom; 714, ventilation hole; 715, reversed-angle wind wall; 716, jet siphon accelerated airflow; 717, ventilation hole jet; 718, first slit accelerated airflow; 719, second slit accelerated airflow; 720, third slit accelerated airflow; 721, base; 722 , guide surface; 723, support structure; 724, support surface; 725, support lift curved surface; 726, drive plate; 727, inner drive ring; 728, outer drive ring; 729, pull rod; 730, second sliding groove; 731, guide seat; 732, guide hole; 733, elastic member; 734, first connecting member; 735, first swinging member; 736, swinging member shaft; 737, second swinging member; 738, second connecting member; 739, steering block; 740, first contact surface; 741, first sliding groove; 742, long axis support; 743, short axis support; 74 4. Claw bearing assembly; 745. Support; 746. Rotating shaft; 747. Rotating arm; 748. Second contact surface; 749. Transmission pin; 750. Rotary drive mechanism; 751. Turntable; 752. Waste liquid collector; 753. Collection area; 754. Waste outlet; 755. Waste liquid deflector; 756. Annular deflection channel; 757. Lifting drive mechanism; 758. Spin coating assembly; 759. Upper spray pipe; 760. Lower spray pipe; 761. Waterproof groove; 762. Exhaust outlet; 763. Pressure difference detection element; 764. Pharmaceutical dispensing cabinet; 765. Camera unit; 8. Second pickup unit; 9. Unloading unit. DETAILED DESCRIPTION

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. People familiar with this technology can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0022] The purpose of the present invention is to provide a wafer cleaning device and an automated wafer grinding and polishing cleaning system and method comprising the same, so as to solve the problems existing in the prior art and prevent the escape of chemical agents.

[0023] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0024] Example 1 Please refer to Figures 1 to 18 , this embodiment provides a wafer cleaning device, characterized in that it includes a cleaning chamber, a cleaning component, a drying component, a fluid shielding hood 701 and a clean air supply unit 702. The cleaning component is used to use different chemicals and detergents to spin-coat and clean the wafers, and the drying component is arranged in the cleaning chamber to spin-dry the cleaned wafers. The fluid shielding hood 701 can be raised and lowered above the cleaning chamber and can be switched between a spin-coating position and a drying position, wherein the spin-coating position is the rising state of the fluid shielding hood 701, which is used to clear the entrance of the cleaning chamber so that the cleaning component can spin-coat and clean the wafers; the drying position is the descending state of the fluid shielding hood 701, which is used to block the entrance of the cleaning chamber to prevent waste liquid from escaping during the drying process. The clean air supply unit 702 is arranged above the fluid shielding hood 701, and is used to transport shielding fluid to the fluid shielding hood 701.

[0025] By integrating the cleaning and drying components and equipping them with a retractable fluid shield 701, seamless switching between the spin-coating cleaning and drying processes is achieved. In the spin-coating position (raised), the shield opens the chamber entrance to wafer processing, while in the drying position (lowered), it closes the entrance, creating a physical barrier. This prevents waste liquid splashing and escape at the source, reducing the risk of cross-contamination. The integrated cleaning and drying functions in a single device significantly reduce the equipment footprint. The retractable shield design avoids the mechanical complexity of traditional isolation valves, reducing failure rates and maintenance costs, while also meeting the semiconductor manufacturing industry's demand for more efficient and compact equipment.

[0026] Among them, the fluid shielding guide cover 701 includes an outer guide ring 7011 and an inner guide ring 7012 that are connected to each other. The outer guide ring 7011 is an inverted cone structure, which is used to guide the clean fluid to form a clean fluid shielding ring 7013 on the periphery. The inner guide ring 7012 is a right cone structure with a closed bottom. A slit fluid acceleration ring 7014 is formed between the outer guide ring 7011 and the inner guide ring 7012. There is a gap at the bottom of the outer guide ring 7011 and the inner guide ring 7012, forming a slit fluid jet ring 7015, which is used to form an acceleration jet shielding ring 7016 to shield chemical escape.

[0027] The outer guide ring 7011 and the inner guide ring 7012 of the fluid shielding guide cover 701 work together: the outer guide ring 7011 guides the airflow of the clean air supply unit 702 to form a clean fluid shielding ring 7013, covering the outer periphery of the chamber; the slit fluid acceleration ring 7014 between the inner and outer rings increases the speed of the pressurized air flow; the slit fluid jet ring 7015 generated by the bottom gap produces an acceleration jet shielding ring 7016, forming a dynamic air curtain barrier around the top of the wafer, effectively blocking the escape path of chemical volatilization during the spin coating stage.

[0028] During spin coating cleaning (with the guide cover rising): the accelerating jet shielding ring 7016 and the clean fluid shielding ring 7013 form a spin coating low negative pressure working area 7017 between the wafer and the fluid shielding guide cover 701, confining the splashing agent / detergent in this area and guiding it to be discharged downward to avoid corrosion of other parts of the equipment; During high-speed drying (the guide hood descends): the accelerated jet shielding ring 7016 strengthens the formation of a high-negative-pressure drying working area 7018 between the wafer and the fluid shielding guide hood 701. The high-speed airflow quickly removes the residual agent / detergent from the wafer surface to prevent secondary contamination.

[0029] The cleaning chamber is surrounded by a waste liquid collector 752 and a waste liquid guide cover 755, wherein: Waste liquid collector 752 surrounds the spin-drying assembly and includes N collection areas 753, independently arranged from outside to inside, where N is an integer greater than or equal to 1. Different collection areas 753 are used to collect different chemical cleaning waste liquids. Each collection area 753 is provided with a separate waste outlet 754 for connection to a waste pipe.

[0030] The waste liquid guide cover 755 has N annular guide channels 756 that are connected to the collection areas 753 in a one-to-one correspondence. The inlets of the N annular guide channels 756 are arranged in sequence from top to bottom.

[0031] This embodiment further includes a lifting drive mechanism 757 for driving the waste liquid guide cover 755 to move up and down, so that the entrances of the N annular guide channels 756 are respectively aligned with the wafer clamping area of ​​the spin-drying assembly.

[0032] The cleaning component includes a spin coating component 758 and a spray component. The spin coating component 758 includes a chemical tube and a lotion tube, as well as a spin coating swing arm that drives the chemical tube and the lotion tube close to and away from the wafer; the spray component includes an upper spray pipe 759 and a lower spray pipe 760, which are used to spray clean the upper surface and lower surface of the wafer respectively.

[0033] When used specifically, for example, using four chemical agents A, B, C, and D and four detergents E, F, G, and H to spin-coat and clean the wafer: The fluid shielding guide hood 701 rises to the spin coating position, and the spin coating assembly 758 spin-coats and cleans the wafers with Agent A. After cleaning, the fluid shielding guide hood 701 descends to the spin drying position, and the lifting drive mechanism 757 drives the waste liquid guide hood 755 upward, so that the first layer of annular guide channel 756 from top to bottom is aligned with the wafer clamping area of ​​the spin drying assembly, and spin drying begins. The waste liquid of Agent A is collected in the corresponding collection area 753 and discharged from the waste outlet 754; The fluid shielding shroud 701 rises again to the spin coating position, and the spin coating assembly 758 spin-coats and cleans the wafers with detergent E. After cleaning, the fluid shielding shroud 701 descends to the spin drying position, and the lifting drive mechanism 757 drives the waste liquid shroud 755 upward, aligning the second layer of annular guide channel 756 from top to bottom with the wafer clamping area of ​​the spin drying assembly, and spin drying begins. The waste liquid of the A agent is collected in the corresponding collection area 753 and discharged from the waste outlet 754. The fluid shielding guide hood 701 rises again to the spin coating position, and the spin coating assembly 758 spin-coats and cleans the wafer with Agent B. After cleaning, the fluid shielding guide hood 701 descends to the spin drying position, and the lifting drive mechanism 757 drives the waste liquid guide hood 755 upward, so that the third layer of annular guide channel 756 from top to bottom is aligned with the wafer clamping area of ​​the spin drying assembly, and spin drying begins. The waste liquid of Agent A is collected in the corresponding collection area 753 and discharged from the waste outlet 754; The fluid shielding shroud 701 rises again to the spin coating position, and the spin coating assembly 758 spin-coats and cleans the wafers with detergent F. After cleaning, the fluid shielding shroud 701 descends to the spin drying position, and the lifting drive mechanism 757 drives the waste liquid shroud 755 upward, aligning the fourth layer of annular guide channel 756 from top to bottom with the wafer clamping area of ​​the spin drying assembly, and spin drying begins. The waste liquid of the A agent is collected in the corresponding collection area 753 and discharged from the waste outlet 754. And so on.

[0034] Among them, the types and quantities of chemicals and lotions can be designed according to process requirements.

[0035] After the chemical and detergent cleaning is complete, the upper and lower spray pipes 759 and 760 are used to sequentially spray a mixture of high-purity gas and pure water onto the upper and lower surfaces of the wafers for a final rinse. The upper and lower spray pipes 759 and 760 then spin dry the wafers. The rinsing and drying process is the same as described above. During each spin drying process, the upper and lower spray pipes 759 and 760 spray a high-purity inert gas, such as nitrogen, onto the upper and lower surfaces of the wafers to assist in the spin drying process.

[0036] The spin-drying assembly includes a claw clamping mechanism 703 for driving the wafer to rotate at high speed under the drive of the rotation drive mechanism 750.

[0037] The claw clamping mechanism 703 includes a driving component 704, a transmission component 705 and a clamping claw 706. The driving component 704 is connected to the transmission component 705 in a transmission manner. Multiple groups of transmission components 705 are arranged radially around the driving component 704. The clamping claw 706 is connected to the end of the transmission component 705 away from the driving component 704. Multiple clamping claws 706 are formed around a circular placement area for the wafer. The transmission component 705 is used to drive the clamping claw 706 to rotate under the drive of the driving component 704, so that the clamping groove 708 approaches and moves away from the circular placement area. When the clamping groove 708 is close to the circular placement area, it is used to clamp the wafer. When the clamping groove 708 is away from the circular placement area, it is used to release the wafer.

[0038] The clamping claw 706 includes a clamping structure 707 . The clamping structure 707 defines a clamping groove 708 . The clamping groove 708 includes a first side wall 709 and a second side wall 710 that are oppositely disposed.

[0039] When the clamping groove 708 has a groove bottom 713, the first side wall 709 and the second side wall 710 are both connected to the groove bottom 713, and the three form a complete integrated structure. The cross-section of the groove bottom 713 can be a straight structure or an arc structure. The present application prefers an arc structure, and the notch of the arc structure faces the opening of the clamping groove 708.

[0040] When the clamping groove 708 does not have the groove bottom 713, the first side wall 709 and the second side wall 710 are separated from each other, and the relative positions of the two are fixed by an external connecting mechanism or supporting mechanism.

[0041] When in use, multiple clamping claws 706 clamp the wafer in the circumferential direction. Figure 10 , the clamping groove 708 of the clamping claw 706 only abuts against the edge of the wafer to complete the clamping of the wafer. In the clamping state: A first gap 711 is formed between the first sidewall 709 and the surface of the wafer close to the first sidewall 709 ; and / or, a second gap 712 is formed between the second sidewall 710 and the surface of the wafer close to the second sidewall 710 ; The edge of the wafer refers to the edge that can reflect the thickness of the wafer.

[0042] When the clamping groove 708 abuts against the edge of the wafer to clamp the wafer, the edge of the wafer forms a line contact with the first side wall 709 and the second side wall 710 of the clamping groove 708, or a very small surface contact, and the contact surface is a part of the edge in the thickness direction of the wafer, rather than the upper and lower process surfaces, thereby avoiding various negative effects that may be caused by the clamping mechanism directly contacting the process surfaces, such as the retention of reagent droplets in the clamping area during drying after the spin coating process. At the same time, during the high-speed rotation and drying process of the wafer, when the airflow enters the first gap 711 and / or the second gap 712 between the first side wall 709 and / or the second side wall 710 and the wafer, an accelerated airflow is formed, which quickly carries away the reagent on the wafer and the clamping groove 708, thereby achieving self-drying during high-speed drying.

[0043] In this embodiment, along the extending direction of the clamping groove 708 , the width of the first gap 711 and / or the second gap 712 gradually decreases and then gradually increases.

[0044] For details, please refer to Figure 11 The first side wall 709 is composed of a first flow splitter and guide area 709a, a first clamping lift surface 709b, and a first diffusion area 709c which are connected in a streamlined and gradually changing manner; The second side wall 710 is composed of a second splitter and guide area 710a, a second clamping lift surface 710b, and a second diffusion area 710c connected in a streamlined and gradually changing manner; Among them, the distance between the first splitter and guide area 709a and the second splitter and guide area 710a gradually decreases in the extension direction of the clamping groove 708, the distance between the first clamping lift surface 709b and the second clamping lift surface 710b is the smallest, and the distance between the first diffusion area 709c and the second diffusion area 710c gradually increases in the extension direction of the clamping groove 708.

[0045] In this way, the clamping area formed by the first side wall 709 and the second side wall 710 forms a Bernoulli lift surface. During the high-speed rotation and drying process of the wafer: The airflow enters the first gap 711 between the wafer and the first sidewall 709, and is accelerated in the process of flowing through the first splitter and guide area 709a, the first clamping lift surface 709b, and the first diffusion area 709c in sequence, forming a Figure 14 The first slit accelerated airflow 719 shown in FIG. 7 can quickly remove the reagents on the wafer and the clamping claws 706 , thereby achieving self-drying of the lower clamping area of ​​the wafer; Similarly, the airflow enters the second gap 712 between the wafer and the second sidewall 710, and is accelerated in the process of flowing through the second splitter guide area 710a, the second clamping lift surface 710b, and the second diffusion area 710c in sequence, forming a Figure 14 The second slit accelerated airflow 718 shown in the figure can quickly take away the reagents on the wafer and the clamping claws 706, thereby achieving self-drying of the upper clamping area of ​​the wafer.

[0046] The clamping structure 707 has an air inlet and an air outlet that connect the first gap 711 and / or the second gap 712 with the outside. The air inlet and the air outlet are openings at both ends of the clamping groove 708, and the windward side is the air inlet. Figure 12 A ventilation hole 714 is further provided on the windward side of the clamping structure 707 to connect the first gap 711 and / or the second gap 712 with the outside. The inner diameter of the ventilation hole 714 gradually decreases along the direction of the air inlet.

[0047] like Figure 13 As shown, during the high-speed rotation and drying process of the wafer, the additional airflow is accelerated through the ventilation hole 714 to form a ventilation hole jet 717, which is sprayed into the first gap 711 and / or the second gap 712, and is superimposed and accelerated with the first slit accelerated airflow 719 and / or the second slit accelerated airflow 718; at the same time, the accelerated airflow formed by the superposition of the two produces a siphon phenomenon in the first diversion cleft guide area 709a and / or the second diversion cleft guide area 710a, generating a jet siphon accelerated airflow 716 that is superimposed and sprayed into the first gap 711 and / or the second gap 712. In this way, the triple airflow superposition of the first slit accelerated airflow 719 and / or the second slit accelerated airflow 718, the ventilation hole jet 717 and the jet siphon accelerated airflow 716 is achieved, which greatly enhances the airflow velocity between the wafer and the first side wall 709 and / or the second side wall (710), and further efficiently and quickly realizes self-drying during high-speed drying.

[0048] In this embodiment, the width of the first gap 711 and / or the second gap 712 gradually decreases in a direction away from the center of the wafer.

[0049] When the clamping groove 708 abuts against the edge of the wafer to clamp the wafer, the edge of the wafer forms a line contact or a very small surface contact with the first side wall 709 and the second side wall 710 of the clamping groove 708, and the width of the first gap 711 and / or the second gap 712 gradually decreases, so that the first side wall 709 and the second side wall 710 form an inclined surface relative to the two side surfaces of the wafer, forming an oblique support and limitation for the edge of the wafer. On the one hand, it further reduces the contact area in the case of surface contact, and on the other hand, the oblique support increases the stability of the wafer clamping.

[0050] In this embodiment, the clamping claw 706 further includes a base 721, and the clamping structure 707 is disposed on the base 721. In addition, a support structure 723 is further disposed on the base 721. The clamping groove 708 of the clamping structure 707 faces the support structure 723, and the side wall of the clamping groove 708 close to the base 721 is a first side wall 709. The support structure 723 has a support surface 724 for supporting the wafer. Figure 13 Along the supporting direction of the supporting surface 724, the end of the first side wall 709 close to the center of the wafer is lower than the supporting surface 724, the end of the first side wall 709 away from the center of the wafer is higher than the supporting surface 724, and the first side wall 709 has a smooth transition between the end close to the center of the wafer and the end away from the center of the wafer.

[0051] During use, a wafer is first placed on the support structure 723 of the multiple clamping jaws 706. The wafer relies on its own gravity to stabilize on the support surface 724. When the wafer needs to be clamped, the clamping jaws 706 are rotated around the support structure 723, gradually bringing the clamping groove 708 closer to the wafer. The wafer first contacts the portion of the first sidewall 709 below the support surface 724. Continued rotation of the clamping jaws 706 gradually lifts the wafer upward, guided by the smooth transition of the first sidewall 709, and releases it from the support surface 724, ultimately achieving a stable clamping state with the cooperation of the multiple clamping jaws 706.

[0052] At this time, a third gap is formed between the lower surface of the wafer and the supporting surface 724. During the high-speed rotation and drying process of the wafer, a third slit accelerating airflow 720 is formed between the lower surface of the wafer and the supporting surface 724. The third slit accelerating airflow 720 can quickly take away the agent on the wafer and the supporting surface 724, thereby realizing self-drying of the wafer and the supporting surface 724, and preventing the residual agent on the supporting surface 724 from re-adhering to the process surface of the wafer when the wafer is placed back on the supporting surface 724 after drying.

[0053] Furthermore, the support structure 723 also includes a support lift curved surface 725 disposed around the support surface 724. After the wafer is clamped and has lost contact with the support surface 724, the distance between the support lift curved surface 725 and the lower surface of the wafer gradually decreases as it approaches the support surface 724. In this way, the support lift curved surface 725 and the support surface 724 also form a Bernoulli lift surface. A Bernoulli slit acceleration zone is formed between the support lift curved surface 725, the support surface 724, and the lower surface of the wafer, significantly increasing the airflow velocity between the wafer and the support surface 724, further efficiently and quickly achieving self-drying during high-speed spin drying.

[0054] In this embodiment, a guide surface 722 for guiding the fluid is provided at the periphery of the base 721 near the support structure 723 and the clamping structure 707. The guide surface 722 is inclined in a direction away from the support structure 723 and the clamping structure 707, that is, a chamfer is provided on the edge of the base 721, and the chamfer forms a frustum-shaped guide surface 722 on the edge of the base 721.

[0055] During the high-speed rotation and drying process of the wafer, the liquid droplets that are thrown off are generally designed to be refracted and fall in the waste liquid collection cover. After the liquid droplets that are thrown off the wafer and the clamping claws 706 fall on the guide surface 722, the guide surface 722 can, on the one hand, guide the droplets away from the wafer and on the other hand, control the centrifugal angle of the droplets from the clamping claws 706 to avoid the droplets from hitting the waste liquid collection cover and splashing back after horizontal separation, causing secondary contamination to the wafer.

[0056] The clamping claw 706 is connected to the transmission assembly 705 through the claw bearing assembly 744. The claw bearing assembly 744 includes: The support 745 is mounted on a turntable 751 on the output shaft of the rotary drive mechanism 750. The turntable 751 is used to drive the wafer to rotate at high speed for drying; The rotating shaft 746 is fixedly connected to the clamping claw 706, and the rotating shaft 746 is rotatably arranged on the support 745; The rotating arm 747 has one end fixedly connected to the rotating shaft 746 and the other end in transmission connection with the transmission assembly 705 . The rotating arm 747 drives the rotating shaft 746 to rotate under the drive of the transmission assembly 705 .

[0057] The transmission assembly 705 includes: A first connecting member 734 is configured to be in transmission connection with the driving assembly 704; The first swinging member 735 is fixedly connected to the first connecting member 734 and swings under the drive of the first connecting member 734; The swing member shaft 736 is fixedly connected to the first swing member 735 and rotates under the drive of the first swing member 735; The second swing member 737 is fixedly connected to the swing member shaft 736 and swings under the drive of the swing member shaft 736; The second connecting member 738 is fixedly connected to the second swinging member 737 and rotates under the drive of the second swinging member 737; The steering block 739 is fixedly connected to the second connecting member 738 and swings under the drive of the second connecting member 738; the steering block 739 has a first contact surface 740, and the rotating arm 747 has a second contact surface 748, and the second contact surface 748 contacts the first contact surface 740 to provide support for the steering block 739; a first sliding groove 741 is provided on the steering block 739, and a transmission pin 749 is provided on the rotating arm 747, and the transmission pin 749 is passed through the first sliding groove 741, and the width of the first sliding groove 741 is greater than the diameter of the transmission pin 749, providing room for the steering block 739 to swing.

[0058] The drive assembly 704 includes: The driving disk 726 is configured to reciprocate along the normal direction of the driving disk 726 under the action of the driving mechanism; A plurality of pull rods 729 are circumferentially arranged on the drive disk 726; each pull rod 729 corresponds to a set of transmission components 705. A second sliding groove 730 is defined on the pull rod 729, and a first connecting member 734 is inserted into the second sliding groove 730. The first connecting member 734 reciprocates along the normal direction of the drive disk 726 under the drive of the pull rod 729; The guide seat 731 is also mounted on the rotary disk 751 and has a guide hole 732 for the pull rod 729 to pass through. The elastic member 733 is disposed between the driving disk 726 and the guide seat 731 , and two ends of the elastic member 733 are fixedly connected to the driving disk 726 and the guide seat 731 respectively.

[0059] The working process of the claw clamping mechanism 703 is as follows: First, in the overall structure, the support 745 and the guide seat 731 are both fixed on the turntable 751, and their positions remain unchanged during operation.

[0060] Release the wafer: A driving mechanism such as an electric or pneumatic lifting device drives the driving disk 726 to rise. During this process, the elastic member 733 is compressed to store elastic potential energy; the driving disk 726 drives the pull rod 729 to rise, and the pull rod 729 drives the first connecting member 734 to rise. The first connecting member 734 drives one end of the first swinging member 735 to rise. While one end of the first swinging member 735 rises, it swings around the swinging member shaft 736 as the center and drives the swinging member shaft 736 to rotate. The swinging member shaft 736 drives the second swinging member 737 to swing. The second swinging member 737 drives the second connecting member 738 to swing. Part 738 drives the steering block 739 to swing, and the steering block 739 performs a combined action of moving and swinging in space under the action of the second connecting part 738, and the steering block 739 drives the transmission pin 749 that is movable through it to move through the first sliding groove 741. Since the transmission pin 749 is set on the rotating arm 747 and has only one degree of freedom of rotation, the transmission pin 749 drives the rotating arm 747 to rotate, and the rotating arm 747 drives the clamping claw 706 to rotate, so that the clamping groove 708 of the clamping structure 707 gradually moves away from the circular placement area, and the clamped wafer is placed on the support surface 724.

[0061] Among them, since the width of the first sliding groove 741 is greater than the diameter of the transmission pin 749, it provides room for the steering block 739 to swing, and the first contact surface 740 of the steering block 739 and the second contact surface 748 of the rotating arm 747 are in a fitting contact, and the second contact surface 748 does not restrict the swing of the first contact surface 740, which in fact also provides room for the steering block 739 to swing.

[0062] Clamping the wafer: This process is exactly the opposite of the process of releasing the wafer. The wafer is placed on the support structure 723 of multiple clamping claws 706 arranged circumferentially. The driving mechanism, such as an electric or pneumatic lifting device, is reset, and the elastic potential energy stored in the elastic member 733 is released, causing the driving disk 726 to move downward, and finally driving the steering block 739 to move and swing in the opposite direction, driving the rotating arm 747 to rotate in the opposite direction, so that the clamping groove 708 gradually approaches the wafer, and then lifts the wafer away from the support surface 724, and finally forms a clamp.

[0063] The first connecting member 734 and the first swinging member 735 can be integrally provided, and the second connecting member 738 and the steering block 739 can also be integrally provided.

[0064] In fact, by setting the initial positions of the first swing member 735 and the second swing member 737, the driving disk 726 can be raised to clamp the wafer, and the driving disk 726 can be lowered to release the wafer, which can be specifically set according to actual needs.

[0065] Furthermore, in order to ensure the stability of wafer clamping, the clamping claws 706 for clamping the wafer are divided into two groups, and are controlled by different drive sources respectively, so as to avoid the same group of clamping claws 706 being unable to achieve accurate clamping of the wafer during the same action. In actual operation, it often happens that there is always at least one clamping claw in the same group that cannot firmly fit the wafer. Therefore, the drive disk 726 is configured to include an inner drive ring 727 and an outer drive ring 728. The inner drive ring 727 and the outer drive ring 728 use different drive sources respectively. The same number of pull rods 729 are evenly arranged on the inner drive ring 727 and the outer drive ring 728, and the pull rods 729 on the inner drive ring 727 and the outer drive ring 728 are staggered. Figure 15 and Figure 16 As shown, in this embodiment, a pull rod 729 is provided on the inner driving ring 727, and the clamping claw 706 is driven to rotate to clamp the wafer through the longer swinging shaft 736 on the long axis support 742; the pull rod 729 is also provided on the outer driving ring 728, and the clamping claw 706 is driven to rotate to clamp the wafer through the shorter swinging shaft 736 on the short axis support 743.

[0066] Example 2 This embodiment provides an automated wafer grinding, polishing and cleaning system, characterized by comprising a frame 1 and integrated loading unit 2, positioning unit 3, processing unit 4, first pickup unit 5, ultrasonic cleaning device 6, wafer cleaning device 7 described in Example 1, second pickup unit 8, unloading unit 9 and control unit. The loading unit 2 is used for scanning, identifying and storing dry wafer carriers, the positioning unit 3 is used for flipping and positioning single wafers, the processing unit 4 is used for double-sided polishing of wafers, the first pickup unit 5 is used for transporting dry wafers, the ultrasonic cleaning device 6 is used for ultrasonic cleaning controlled by ultrasonic energy density curve, the wafer cleaning device 7 is used for spin coating, cleaning and centrifugal drying of wafers, the second pickup unit 8 is used for transporting wet wafers, the unloading unit 9 is used for scanning and loading dry wafer carriers, and the control unit is used to coordinate the various units to execute a fully closed-loop process of dry wafer feeding → polishing and grinding → ultrasonic cleaning → chemical cleaning and drying → dry wafer discharge.

[0067] The ultrasonic cleaning device 6 includes an overflow tank 601, a wafer positioning mechanism 602, a medium-temperature fluid supply system 603, a quartz glass laser tunnel 604, and a laser scanning module 605. The overflow tank 601 serves as the primary space for cleaning wafers, containing and guiding medium-temperature liquid water. The wafer positioning mechanism 602 is disposed within the overflow tank 601 and is used to vertically secure the wafer to be cleaned, forming a vertical laminar flow guide structure with the wafer. The medium-temperature fluid supply system 603 is used to supply medium-temperature liquid water to the overflow tank 601 and maintain a vertical laminar flow out of the quartz glass laser tunnel 604, which serves as an optical channel and window. The laser scanning module 605 is configured to scan the cavitation zone 615 in the medium-temperature liquid water through the optical channel and window to form a controllable cavitation bubble flow.

[0068] Specifically, the laser scanning module 605 includes: Three-axis galvanometer laser, the scanning range covers the wafer projection area and the focal depth is adjustable by ±50mm; Energy adjustment device, dynamically controlling the laser focusing energy density distribution curve; Energy output proportional controller, achieving 10%-100% continuous power adjustment.

[0069] Overflow channel 606 is located at the top of overflow trough 601, connected to drain pipe 607. A sump 608 is located around the periphery of overflow trough 601, and drain pipe 607 extends into sump 608. During the cleaning process, contaminants continuously overflow with vertical laminar flow and are discharged into sump 608 through overflow channel 606 and drain pipe 607.

[0070] The bottom of the overflow trough 601 is provided with a through-hole for the quartz glass laser tunnel 604 to pass through. This allows the laser light from the laser scanning module 605 to pass through the quartz glass laser tunnel 604 and focus on the cavitation zone 615 in the medium-temperature liquid water. An overlapping portion is provided on the outer periphery of the quartz glass laser tunnel 604 near the top. The overflow trough 601 is equipped with a supporting portion 609 for supporting the overlapping portion and a pressing portion 610 for compressing the overlapping portion. The pressing portion 610 contacts both the overlapping portion and the supporting portion 609. A first seal is provided in the area where the pressing portion 610 contacts the overlapping portion, and a second seal is provided in the area where the pressing portion 610 contacts the supporting portion 609.

[0071] The wafer positioning mechanism 602 includes two wafer supports 611 positioned opposite each other. The wafer supports 611 are provided with multiple vertically spaced slots for wafers 0. A wafer stopper 612 is positioned above the wafer supports 611. The slots support the lower portion of wafer 0, while the stopper 612 holds the upper portion of wafer 0 in place, preventing it from shifting sideways significantly during the cleaning process.

[0072] The medium-temperature liquid water carrying the cavitation bubble flow flows from the wafer positioning mechanism 602 and below the wafer 0 to the wafer 0, and flows through the gap between adjacent wafers 0. Due to the existence of the wafer positioning mechanism 602 and the wafer 0, the flow area of ​​the medium-temperature liquid water is reduced, so that the medium-temperature liquid water is accelerated and forms a laminar flow vertically through the front and back surfaces of the wafer 0.

[0073] Furthermore, flow limiting structures 613 are provided on both sides of the wafer support frame 611 to further reduce the flow area of ​​the mixed fluid.

[0074] A through-flow guide tunnel 614 is provided below the receiving grooves on both sides of the wafer positioning mechanism 602 for allowing medium-temperature liquid water to flow in and clean the edge of the wafer 0.

[0075] The wafer cleaning device 7 is arranged in a waterproof tank 761 provided on the frame 1. The waterproof tank 761 is provided with a sealed door for closing the waterproof tank 761 during the wafer cleaning process. An exhaust port 762 connected to the exhaust device is provided in the waterproof tank 761 to keep the internal negative pressure of the waterproof tank 761 at all times. A pressure difference detection element 763 is provided in the waterproof tank 761 to monitor the micro-pressure difference negative pressure state inside the waterproof tank 761 in real time to prevent chemical gases from overflowing the waterproof tank 761 and causing damage to the external environment. A chemical configuration cabinet 764 is provided on one side of the waterproof tank 761, which is responsible for the pipe configuration control of the chemicals and detergents transported to the spin coating assembly 758. The chemical configuration cabinet 764 also needs to maintain a negative pressure state. A camera unit 765 is provided on the outside of the waterproof tank 761 to monitor the interior of the waterproof tank 761 in real time through a transparent window.

[0076] Example 3 This embodiment provides an automated method for wafer polishing and cleaning, characterized by using the automated system of the second embodiment, including the following steps: S1. Scan the QR code on the dry wafer and bind the information. S2 wafer positioning is transferred to the processing unit 4 for double-sided polishing; S3. After grinding, the wafer is sent to ultrasonic cleaning; The specific steps include: S301 generates a vertical laminar flow in the cleaning fluid flow channel in a medium temperature liquid water environment; Specifically, the temperature range of medium-temperature clean liquid water is 50℃-70℃: When the water temperature is higher than 50°C, the thermal motion of water molecules is significantly intensified, reducing the surface tension and viscous resistance of liquid water, making it easier for the subsequently generated cavitation bubbles to collapse and release high-intensity shock waves. Setting the upper temperature limit to 70°C effectively prevents the polishing residue on the wafer 0 surface from solidifying or sintering due to high temperature, ensuring that the contaminants are in a loose state for subsequent removal. The continuous overflow state is maintained by the static pressure water replenishment system, forming a stable vertical laminar flow, providing a fluid dynamics basis for subsequent bubble mixing and collapse.

[0077] S302. By laser scanning the liquid water to form a three-dimensional cavitation zone, the generation of cavitation bubble flow is controlled; Specifically, once the liquid water environment is in place, a 1064nm pulsed laser beam is injected into the water system and scanned across the wafer projection area via a three-axis galvanometer system. The laser's focus forms a transient plasma in the water, which expands to generate cavitation bubbles. The ±50mm adjustable focal depth ensures uniform coverage across varying water depths.

[0078] S303. Dynamically adjust the laser energy density distribution curve to control the size and density of cavitation bubbles. Specifically, the bubble density is adjusted by controlling the density and staggered distribution of the laser scanning path; and the bubble size is controlled by adjusting the focus energy ratio.

[0079] At this point, the system enters its core control phase: By programming the scanning path spacing, the laser energy density per unit volume is controlled, thereby precisely manipulating the bubble generation density. Simultaneously, a jump energy waveform is employed to dynamically adjust the focal energy ratio within a range of 10%-100%, enabling the diameter of individual bubbles to be continuously adjustable within a certain range, such as 5-200μm. This dual-parameter control forms the basis for matrix bubble generation. For example, by alternating high- and low-energy scanning lines in a 1:3 ratio, a preset mix of large and small bubbles can be achieved along a specific path.

[0080] Among them, the jump energy waveform means that when the laser is continuously scanning, the energy amplitudes of adjacent pulses can switch suddenly, such as pulse A: 100% energy → pulse B: 30% energy → pulse C: 80% energy.

[0081] High-energy pulse: high photon density → plasma expands violently → large bubbles are generated (Ø100-200μm); Low energy pulse: low ionization degree → plasma slightly expands → small bubbles (Ø5-20μm) are generated.

[0082] S304. Customize the bubble collapse energy curve based on the cleaning stage to remove pollutants of different particle sizes in stages, including: In the initial stage, a large proportion of large bubbles is configured to remove large particle pollutants; The mid-stage is configured with a medium bubble mixing ratio to remove medium particle contaminants; A high proportion of small bubbles is configured in the later stage to remove residual small particle pollutants.

[0083] To illustrate with a specific example, based on the above-mentioned controllable cavitation field, the cleaning process performs targeted contaminant removal in three stages: In the initial stage (about 2 minutes), a mixed group dominated by large bubbles of 100-200 μm is configured. The collapse of the bubbles releases a strong shock wave of >100-200 kHz, which specifically peels off large particles such as polishing residue of 10-20 μm. In the middle stage (about 3 minutes), the system transitions to a 20-100 μm bubble mixture, and the micro-jet effect formed by the medium-frequency shock wave released by the collapse removes 2-10 μm attached particles. In the later stage (about 5 minutes), it switches to a high-density 5-20μm small bubble group, and the 500kHz-2MHz high-frequency resonance wave released by its collapse removes nano-scale residues.

[0084] The duration of each stage can be dynamically adjusted by ±30% based on feedback from the online particle sensor, and the energy curve is also optimized in real time - for example, the initial stage uses an 80% energy density and a 1.5mm sparse scan combination, while the later stage switches to a 30% energy density and a 0.2mm dense scan mode.

[0085] S305. Discharge of pollutants through laminar overflow; During the cleaning process, contaminants are continuously discharged through vertical laminar flow. The overflow trough ensures that the fluid renewal rate matches the contaminant load. This dynamic drainage mechanism prevents secondary deposition of stripped contaminants while maintaining fluid cleanliness in the cleaning area.

[0086] S4. After ultrasonic cleaning, the wafer is sent to the wafer cleaning device for spin coating, rinsing and centrifugal drying; The cleaning process includes a parameter optimization cycle: Real-time monitoring of chemical spin coating uniformity in wafer cleaning equipment; Adjust the reagent supply parameters of the spin coating arm according to the monitoring data; Synchronize optimized parameters to multiple device clusters.

[0087] S5. Dry wafer discharge.

[0088] Adaptive changes based on actual needs are all within the scope of protection of the present invention.

[0089] It should be noted that it will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the present invention is defined by the appended claims, not the foregoing description, and it is intended that all variations within the meaning and range of equivalents of the claims be encompassed within the present invention. Any reference signs in the claims should not be construed as limiting the claim to which they relate.

[0090] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the method and core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. A wafer cleaning device, characterized in that: include: Cleaning chamber; Cleaning components for spin-coating wafers using various chemicals and lotions; A drying assembly is provided in the cleaning chamber and is used to dry the cleaned wafers; A fluid shielding guide cover (701) is liftably arranged above the cleaning chamber and can be switched between a spin coating position and a spin drying position; The spin coating position is the raised state of the fluid shielding guide cover (701), which is used to clear the entrance of the cleaning chamber so that the cleaning component can perform spin coating cleaning on the wafer; The drying position is the lowered state of the fluid shielding guide cover (701), which is used to block the entrance of the cleaning chamber to prevent waste liquid from escaping during the drying process; a clean air supply unit (702), arranged above the fluid shielding flow guide cover (701), and used for conveying shielding fluid to the fluid shielding flow guide cover (701); The fluid shielding guide cover (701) comprises an outer guide ring (7011) and an inner guide ring (7012) connected to each other, wherein the outer guide ring (7011) is an inverted frustum structure and is used to guide the clean fluid to form a clean fluid shielding ring (7013) on the periphery, and the inner guide ring (7012) is a right frustum structure with a closed bottom surface, and a slit fluid acceleration ring (7014) is formed between the outer guide ring (7011) and the inner guide ring (7012), and a gap is provided at the bottom of the outer guide ring (7011) and the inner guide ring (7012) to form a slit fluid jet ring (7015) for forming an acceleration jet shielding ring (7016) to shield chemical escape.

2. The wafer cleaning device according to claim 1, wherein: The cleaning chamber is surrounded by a waste liquid collector (752) and a waste liquid guide cover (755), wherein: The waste liquid collector (752) is arranged around the spin-drying component and includes N collection areas (753) independently arranged from the outside to the inside, where N is an integer greater than or equal to 1, and different collection areas (753) are used to collect different chemical cleaning waste liquids; The waste liquid guide cover (755) has N annular guide channels (756) that are in one-to-one communication with the collection areas (753), and the inlets of the N annular guide channels (756) are arranged in sequence from top to bottom; It also includes a lifting drive mechanism (757) for driving the waste liquid guide cover (755) to lift and lower, so that the entrances of the N annular guide channels (756) are respectively aligned with the wafer clamping area of ​​the spin-drying component.

3. The wafer cleaning device according to claim 2, wherein: The spin-drying assembly includes a claw clamping mechanism (703) for driving the wafer to rotate at high speed under the drive of the rotation drive mechanism (750).

4. The wafer cleaning device according to claim 3, wherein: The claw clamping mechanism (703) includes a driving assembly (704), a transmission assembly (705) and a clamping claw (706); The clamping claw (706) includes a clamping structure (707), the clamping structure (707) is provided with a clamping groove (708), and the clamping groove (708) includes a first side wall (709) and a second side wall (710) arranged opposite to each other; The clamping groove (708) only abuts against the edge of the wafer to complete the clamping of the wafer, and in the clamping state: A first gap (711) is formed between the first side wall (709) and the surface of the wafer close to the first side wall (709); and / or, a second gap (712) is provided between the second sidewall (710) and a surface of the wafer close to the second sidewall (710); The edge of the wafer refers to the edge that can reflect the thickness of the wafer; The driving component (704) is in driving connection with the transmission component (705), and multiple groups of the transmission components (705) are arranged radially around the driving component (704). The clamping claws (706) are in driving connection with one end of the transmission component (705) away from the driving component (704). Multiple clamping claws (706) surround a circular placement area for the wafer. The transmission component (705) is used to drive the clamping claws (706) to rotate under the drive of the driving component (704), so that the clamping groove (708) approaches and moves away from the circular placement area. When the clamping groove (708) approaches the circular placement area, it is used to clamp the wafer, and when the clamping groove (708) moves away from the circular placement area, it is used to release the wafer.

5. The wafer cleaning device according to claim 1, wherein: The cleaning component includes a spin coating component (758) and a spray component, wherein the spin coating component (758) includes a chemical tube and a lotion tube, and a spin coating swing arm that drives the chemical tube and the lotion tube to approach and move away from the wafer; the spray component includes an upper spray pipe (759) and a lower spray pipe (760), which are respectively used to spray and clean the upper surface and the lower surface of the wafer.

6. A wafer polishing and cleaning automation system, characterized in that: It comprises a frame (1) and integrated thereon: A loading unit (2) is used for scanning, identifying and storing dry wafer carriers; A positioning unit (3), used for flipping and positioning a single wafer; A processing unit (4) for double-sided polishing of wafers; A first picking unit (5) is used for transporting dry wafers; An ultrasonic cleaning device (6) for achieving ultrasonic cleaning with ultrasonic energy density curve control; The wafer cleaning device (7) according to any one of claims 1 to 5, used for spin coating, rinsing and centrifugal drying of wafers; A second picking unit (8) is used for transporting wet wafers; A material unloading unit (9), used for scanning and loading dry wafer carriers; The control unit coordinates each unit to execute the full closed-loop process of wafer dry feeding → polishing and grinding → ultrasonic cleaning → chemical cleaning and drying → dry discharge.

7. The wafer polishing and cleaning automation system according to claim 6, characterized in that: The ultrasonic cleaning device (6) comprises: Overflow trough (601), for containing and guiding medium-temperature liquid water; A wafer positioning mechanism (602) is provided in the overflow trough (601) and is used to vertically fix the wafer to be cleaned and cooperate with the wafer (0) to form a vertical laminar flow guide structure; A medium-temperature fluid supply system (603) is used to provide medium-temperature liquid water to the overflow tank (601) and maintain vertical laminar overflow; A quartz glass laser tunnel (604) serving as an optical channel and window; The laser scanning module (605) is configured to scan the interior of the medium-temperature liquid water through the optical channel and the window to form a controllable cavitation bubble flow.

8. The wafer polishing and cleaning automation system according to claim 7, characterized in that: The laser scanning module (605) comprises: Three-axis galvanometer laser, the scanning range covers the wafer projection area and the focal depth is adjustable by ±50mm; Energy adjustment device, dynamically controlling the laser focusing energy density distribution curve; Energy output proportional controller, achieving 10%-100% continuous power adjustment.

9. A wafer grinding and polishing automated cleaning method, characterized in that: The automation system according to any one of claims 6 to 8 comprises the following steps: S1. Scan the QR code on the dry wafer and bind the information. S2 wafer positioning after transfer to the processing unit (4) for double-sided polishing; S3. After grinding, the wafer is sent to ultrasonic cleaning; S4. After ultrasonic cleaning, the wafer is sent to the wafer cleaning device for spin coating, rinsing and centrifugal drying; S5. Dry wafer discharge.

10. The wafer polishing and cleaning automation method according to claim 9, characterized in that: The ultrasonic cleaning in step S3 specifically includes the following steps: S301 generates a vertical laminar flow in the cleaning fluid flow channel in a medium temperature liquid water environment; S302. By laser scanning the liquid water to form a three-dimensional cavitation zone, the generation of cavitation bubble flow is controlled; S303 dynamically adjusts the laser energy density distribution curve to control the size and density of cavitation bubbles; S304. Customize the bubble collapse energy curve based on the cleaning stage to remove pollutants of different particle sizes in stages; S305. Remove pollutants through laminar overflow.

11. The wafer polishing and cleaning automation method according to claim 10, characterized in that: The dynamic adjustment of the laser energy density distribution curve in step S303 includes: The bubble density can be adjusted by controlling the density and staggered distribution of the laser scanning path; The bubble size is controlled by adjusting the focus energy ratio.

12. The automated wafer grinding, polishing and cleaning method according to claim 10, wherein: The step S304 of removing pollutants in stages includes: In the initial stage, a large proportion of large bubbles is configured to remove large particle pollutants; The mid-stage is configured with a medium bubble mixing ratio to remove medium particle contaminants; A high proportion of small bubbles is configured in the later stage to remove residual small particle pollutants.

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