Wafer reconstruction structure and corresponding preparation method

Abstract

The invention relates to the field of semiconductor processing, and provides a wafer reconstruction structure and a corresponding preparation method, and the method comprises the steps: providing a first wafer and an edge dummy wafer structure, and enabling the interior of the edge dummy wafer structure to be provided with a through hole structure penetrating through the thickness direction; fixing the edge dummy wafer structure on the surface of the first wafer; and the warping of the first wafer is reduced through the edge dummy wafer structure.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and discloses a wafer reconstruction structure and a corresponding preparation method. Background Art

[0002] With the development of packages such as chiplets and 2.5D / 3D, especially for packaging products that use fan-in / fan-out wafer reconstruction, multi-layer and mixed stacking leads to increased wafer thickness and warpage, which in turn leads to reduced wafer processability. Supplementing edge dummies is a commonly used method to control wafer warpage. Edge dummies are generally square and are evenly arranged around the wafer on a temporary carrier at a certain interval. Generally, the more dummies are supplemented, the better the warpage control effect. However, in mass production practice, the efficiency of edge patch processing is low and the number of supplemented edge dummies is limited, so the effect of controlling warpage by supplementing square edge dummies is limited. Therefore, it is urgent to propose an idea for preparing edge dummies to achieve efficient placement of edge dummies while effectively controlling the warpage of the reconstructed wafer. Summary of the Invention

[0003] The purpose of the present invention is to solve the problem of limited effect and low efficiency of controlling wafer warpage by evenly arranging multiple edge fake pieces at a certain interval around the wafer on a temporary carrier, and to provide a wafer reconstruction structure and a corresponding preparation method. In order to achieve the above objectives, the present invention provides a wafer reconstruction structure, comprising: First wafer; An edge dummy sheet structure having a through-hole structure extending through the thickness direction; Wherein, the edge dummy structure is fixed on the surface of the first wafer.

[0004] As an implementation method, the edge dummy structure further includes an edge structure arranged around an edge portion of the first wafer surface, and the through-hole structure is located inside the edge structure.

[0005] As an implementation method, the edge dummy film structure includes at least one second wafer, and the second wafer has a through hole extending through the thickness direction. When there are at least two second wafers, at least two second wafers are stacked, and the corresponding through holes in at least two second wafers are connected to form a corresponding through hole structure.

[0006] As an implementation method, when there are at least two second wafers, adjacent second wafers are connected by a first adhesive material.

[0007] As an implementation method, the first adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam glue, and a temporary bonding glue.

[0008] As an implementation method, when there are at least two second wafers, the at least two second wafers have the same shape and size, and the corresponding through holes in the at least two second wafers have the same shape, size and position.

[0009] As an implementation method, the through-hole structure is a circular through-hole structure or a square through-hole structure.

[0010] As an implementation method, there is at least one through-hole structure.

[0011] As an implementation method, when there is one through-hole structure, the through-hole structure is located in the middle of the edge dummy structure.

[0012] As an implementation method, when there are multiple through-hole structures, the multiple through-hole structures have the same size, and the multiple through-hole structures are distributed in an array or in a ring shape on the inner side of the edge dummy structure.

[0013] As an implementation method, when there are multiple through-hole structures, the through-hole structures include a first through-hole structure located in the middle of the edge dummy structure and multiple second through-hole structures distributed around the first through-hole structure.

[0014] As an implementable embodiment, the edge dummy structure and the first wafer have the same cross-sectional outer contour shape and cross-sectional outer contour size.

[0015] As an embodiment, the first wafer surface and the edge dummy structure are fixed to each other by a second adhesive material.

[0016] As an implementation method, the second adhesive material covers the surface of the first wafer or the second adhesive material is located on a portion of the surface of the first wafer for connecting with the edge dummy structure.

[0017] As an implementation method, the second adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam glue, and a temporary bonding glue.

[0018] Accordingly, the present invention also provides a method for preparing a wafer reconstruction structure, comprising: providing a first wafer; An edge dummy structure is arranged on the first wafer, wherein the edge dummy structure has a through-hole structure penetrating in the thickness direction, so as to obtain a wafer reconstruction structure including the edge dummy structure and the first wafer.

[0019] As an implementation method, the edge dummy structure further includes an edge structure arranged around an edge portion of the first wafer surface, and the through-hole structure is located inside the edge structure.

[0020] As an implementation method, the edge dummy structure includes at least one second wafer, and the step of providing the edge dummy structure on the first wafer includes: providing at least one second wafer; cutting at least one second wafer to form a through hole in the second wafer extending through the second wafer in a thickness direction; The cut second wafer is stacked on the first wafer, wherein when there are at least two second wafers, at least two second wafers are stacked, and corresponding through holes in at least two second wafers are connected to form corresponding through hole structures.

[0021] As an implementation method, when the second wafer consists of at least two pieces, the step of superimposing the cut second wafer on the first wafer includes: The at least two second wafers after being cut are stacked to form an edge dummy wafer structure, and the corresponding through holes in the at least two second wafers are connected to form a corresponding through hole structure; The edge dummy structure is arranged on the first wafer.

[0022] As an implementation method, when the second wafer consists of at least two pieces, the step of superimposing the cut second wafer on the first wafer includes: At least two cut second wafers are sequentially stacked on the first wafer to form an edge dummy structure on the first wafer, and corresponding through holes on at least two second wafers are connected to form a corresponding through hole structure.

[0023] As an implementation method, adjacent second wafers are connected by a first adhesive material.

[0024] As an implementation method, the first adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam glue, and a temporary bonding glue.

[0025] As an implementation method, the surface of the first wafer further has a second adhesive material, and the second wafer and the first wafer are connected via the second adhesive material.

[0026] As an implementation method, the second adhesive material covers the surface of the first wafer or the second adhesive material is located on a portion of the surface of the first wafer for connecting with the edge dummy structure.

[0027] As an implementation method, the second adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam glue, and a temporary bonding glue.

[0028] As an implementation method, when there are at least two second wafers, the at least two second wafers have the same shape and size, and the corresponding through holes in the at least two second wafers have the same shape, size and position.

[0029] As an implementation method, the through-hole structure is a circular through-hole structure or a square through-hole structure.

[0030] As an implementation method, there is at least one through-hole structure.

[0031] As an implementation method, when there is one through-hole structure, the through-hole structure is located in the middle of the edge dummy structure.

[0032] As an implementation method, when there are multiple through-hole structures, the multiple through-hole structures have the same size, and the multiple through-hole structures are distributed in an array or in a ring shape.

[0033] As an implementation method, when there are multiple through-hole structures, the through-hole structures include a first through-hole structure located in the middle of the edge dummy structure and multiple second through-hole structures distributed around the first through-hole structure.

[0034] As an implementable embodiment, the edge dummy structure and the first wafer have the same cross-sectional outer contour shape and cross-sectional outer contour size.

[0035] Beneficial effects of the present invention: The present invention provides a first wafer and an edge dummy structure, wherein the edge dummy structure has a through-hole structure extending in the thickness direction; the edge dummy structure is fixed to the surface of the first wafer; and the warping of the first wafer is reduced by the edge dummy structure.

[0036] The present invention proposes a method for preparing a "Taiko-like wafer" by fixing the edge dummy structure on the surface of the first wafer, thereby reducing the warping of the first wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A diagram showing the process of preparing a fake film according to some embodiments of the present invention; Figure 2-Figure 3 A schematic diagram of a wafer reconstruction structure for fixing an edge dummy structure to a first wafer surface provided by some embodiments of the present invention; Figure 4 A top view of an edge dummy structure provided in some embodiments of the present invention; Figure 5-Figure 6 A schematic diagram of a process for preparing a wafer reconstruction structure for fixing an edge dummy structure to a first wafer surface according to some embodiments of the present invention; Figure 7-Figure 8 Some embodiments of the present invention provide Figure 6 Schematic diagram of the preparation process in which the edge dummy structure is provided on the surface of the first wafer; Figure 9 A method for preparing a wafer reconstruction structure is provided in some embodiments of the present invention. DETAILED DESCRIPTION

[0038] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0039] It should be understood that as used herein, terms such as "first" and "second" describe various elements, components, regions, layers and / or sections, and these elements, components, regions, layers and / or sections should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer or section from another element, component, region, layer or section. For example, terms such as "first" and "second" do not imply a sequence or order when used herein unless the context clearly indicates. For ease of description, spatially relative terms such as "upper" and "lower" may be used herein to describe the relationship of one element or feature to other elements or features as shown in the accompanying drawings. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientations shown in the accompanying drawings.

[0040] In this application, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediate medium; internal communication between two elements, or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0041] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory. It should be noted that the terms "including" and "having" and their variations involved in this application are intended to cover non-exclusive inclusions.

[0042] See also Figure 1 In some embodiments, taking silicon material as an example, the preparation method of the square edge fake sheet is generally prepared by the following process: first, see Figure 1 (a1) and (b1) in FIG. 1 , (a1) is a top view, and (b1) is a cross-sectional view of (a1), providing a bare silicon wafer; see FIG. Figure 1 (a2) and (b2) in the figure, (a2) is a top view, (b2) is a cross-sectional view of (a2), the surface of the bare silicon wafer is ground and thinned to the same thickness as the wafer used to prepare the chip, and then see Figure 1 In (a3) ​​and (b3), (a3) ​​is a top view, and (b3) is a cross-sectional view of (a3). The thinned bare silicon wafer is diced to a specific size to produce dummy wafers. This preparation process often uses knife scribing, and the shape of the dummy wafers is limited to square or rectangular shapes. Multiple dummy wafers are then evenly spaced around the wafer used for chip preparation on a temporary carrier. Generally, the greater the number of dummy wafers, the better the warpage control effect. Furthermore, referring to the thickness of the wafer used for chip preparation, the thickness of the dummy wafers placed on the outside of the wafer is generally less than 750μm. This thickness of dummy wafer is only suitable for the reconstruction of conventional fan-in fan-out packaging products and is not suitable for packaging structures with a total thickness far exceeding 1000μm during related 2.5D / 3D processes, such as chip-on-wafer, chip-on-substrate, and chip-on-wafer-on-substrate. Directly customizing silicon wafers of a specific thickness is both economically expensive and time-consuming for the required post-processing (primarily scribing). Therefore, it is urgent to propose a method for preparing thick-edge dummy wafers (>1000um) to achieve wafer warpage control for 2.5D / 3D and other related thick wafer processes.

[0043] therefore, Figure 2 and Figure 3Some embodiments of the present invention provide a reconstructed wafer structure, comprising: a first wafer 50; an edge dummy structure 30 having a through-hole structure 31 extending through the thickness of the first wafer 50; the edge dummy structure 30 is configured to reduce warpage of the first wafer 50; wherein the edge dummy structure 30 is fixed to the surface of the first wafer 50; thereby achieving a "taiko-like wafer" and reducing warpage of the first wafer 50. The wafer reconstructed structure provided by the present invention can then be used as a wafer substrate for chiplets and 2.5D / 3D packaging processes.

[0044] Conventional Taiko wafers refer to a wafer thinning technology known as the Taiko process. This process thins only the middle portion of the wafer during back grinding, while retaining the outer edges. The purpose of this process is to reduce wafer warping during processing and improve the mechanical strength and processing efficiency of the wafer. The present invention, however, achieves the preparation of a "Taiko-like wafer" by placing the edge dummy structure 30 on the surface of the first wafer 50, thereby reducing warping of the first wafer.

[0045] In some embodiments, the first wafer 50 may be a thin slice of a cylindrical semiconductor crystal, used as a substrate in integrated circuit manufacturing. Because it is typically circular, it is referred to as a wafer, but in other embodiments, it may have other shapes. In some embodiments, the first wafer 50 may be a silicon wafer, a silicon oxide wafer, a silicon carbide wafer, a gallium nitride wafer, a gallium arsenide wafer, an indium phosphide wafer, a lithium tantalate wafer, a substrate, or the like. In some embodiments, the first wafer 50 may be sized according to its diameter, such as 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, or 12 inches.

[0046] In some embodiments, see Figure 2 , the edge dummy structure 30 includes at least one second wafer 301, and the second wafer 301 has a through hole running through the thickness direction. In some embodiments, the second wafer 301 can be a thin slice of a cylindrical semiconductor crystal, which is called a wafer because its shape is usually circular, but in other embodiments, it can be other shapes. In some embodiments, the through hole can be formed by laser cutting the second wafer. In some embodiments, when the second wafer 301 is at least two pieces, at least two second wafers 301 are superimposed, and the corresponding through holes in at least two second wafers 301 are connected to form a corresponding through hole structure 31. In some embodiments, when the second wafer 301 is at least two pieces, adjacent second wafers 301 are connected by a first adhesive material 40.

[0047] In some embodiments, the second wafer may be a silicon wafer, a silicon oxide wafer, a silicon carbide wafer, a gallium nitride wafer, a gallium arsenide wafer, an indium phosphide wafer, a lithium tantalate wafer, a substrate, etc. of any size including but not limited to 2 inches, 4 inches, 6 inches, 8 inches, 12 inches, 13 inches, 16 inches and 18 inches, and may also include a solid film such as an ABF film, a DAF film, etc. having any thickness; in some embodiments, when there are at least two second wafers 301, the materials of the at least two second wafers may be the same or multiple.

[0048] In some embodiments, when the second wafer is one of 4 inches, 6 inches, 8 inches, 12 inches, 13 inches, 16 inches, and 18 inches, the first wafer may be a corresponding 2 inches, 4 inches, 6 inches, 8 inches, 12 inches, 13 inches, or 16 inches. In some embodiments, the edge dummy structure 30 typically has only a basic structure or several layers of patterns, without complex circuits or components. The first wafer 50 is a mass production wafer: it includes a complete process flow, has various patterns and structures, and is used to manufacture actual chips.

[0049] In some embodiments, the first adhesive material 40 is any one of a thermal release film, an ABF film, a molding compound, a bottom filler, an edge dam glue, and a temporary bonding glue.

[0050] In some embodiments, the thermal release film is a special adhesive film that has adhesive strength at room temperature, but when heated to a certain temperature, the adhesive strength disappears. ABF film is usually made of polyimide film. Molding materials mainly include epoxy resin, phenolic resin and polyphenylene sulfide (PPS). Bottom fillers include epoxy resin, silicone and acrylate. Edge dam glue is usually a high-viscosity epoxy resin or silicone gel with good adhesion and shape retention. Temporary bonding glue includes acrylate, silicone and polyimide.

[0051] In some embodiments, when there are at least two second wafers 301 , the at least two second wafers 301 have the same shape and size, and the corresponding through holes in the at least two second wafers 301 have the same shape, size, and position.

[0052] In some embodiments, see Figure 4The edge dummy structure 30 further includes an edge structure 32 arranged around the edge portion of the surface of the first wafer 50, and the through hole structure 31 is located inside the edge structure 32. This further reduces the warping of the first wafer 50. In some embodiments, the edge structure can be Figure 4 Various different shapes are listed in the examples.

[0053] In some embodiments, see Figure 4 In (a), the through-hole structure 31 is a circular through-hole structure; in some embodiments, see Figure 4 In (d), the through-hole structure 31 is a square through-hole structure. In some embodiments, there is at least one through-hole structure 31 , and when the first wafer 50 is located in the through-hole structure 31 , each through-hole structure 31 is provided with a corresponding first wafer 50 .

[0054] In some embodiments, see Figure 4 In (a) and (d), when there is only one through-hole structure 31, the through-hole structure 31 is located in the middle of the edge dummy structure 30. For example, see Figure 2 and Figure 3 The through-hole structure 31 is located in the middle of the edge dummy film structure 30. The edge dummy film structure 30 has an edge structure located outside the through-hole structure. By surrounding the edge structure on the edge portion of the surface of the first wafer 50, the edge dummy film structure 30 is arranged on the first wafer 50, thereby reducing the warping of the first wafer 50 through the edge dummy film structure 30.

[0055] In some embodiments, see Figure 4 In (b) and (e), when there are multiple through-hole structures 31 , the multiple through-hole structures 31 have the same size, and the multiple through-hole structures 31 are distributed in an array or in a ring.

[0056] In some embodiments, see Figure 4 In (c) and (f), when there are multiple through-hole structures 31, the through-hole structures 31 include a first through-hole structure located in the middle of the edge dummy structure 30 and multiple second through-hole structures distributed around the first through-hole structure. The shapes of the first through-hole structure and the second through-hole structure can be the same or different. For example, the first through-hole structure can be a square through-hole structure or a circular through-hole structure, while the second through-hole structure can be a corresponding circular through-hole structure or square through-hole structure. In some embodiments, the sizes of the first through-hole structure and the second through-hole structure can be the same or different. For example, the size of the first through-hole structure is larger than the size of the second through-hole structure.

[0057] Of course, in other embodiments, the shape of the through-hole structure is not limited to Figure 4 Shapes listed in, such as round, square or rectangular in various standard wafer sizes; combinations of single or multiple shapes including matrix or ring distribution.

[0058] In some embodiments, see Figure 2 and Figure 3 When the edge dummy structure 30 is disposed on the surface of the first wafer 50 , the cross-sectional size and cross-sectional shape of the edge dummy structure 30 and the first wafer 50 are the same.

[0059] In some embodiments, see Figure 2 and Figure 3 When the edge dummy structure 30 is fixed to the surface of the first wafer 50, the surface of the first wafer 50 and the edge dummy structure 30 are fixed together by the second adhesive material 20. In some embodiments, the first adhesive material 40 and the second adhesive material 20 can be the same or different. In some embodiments, the second adhesive material 20 is a thermal release adhesive or other materials. In some embodiments, see Figure 3 The second adhesive material 20 completely covers the surface of the first wafer 50. In some embodiments, the second adhesive material 20 is located on a portion of the surface of the first wafer 50 that is connected to the edge dummy structure.

[0060] See also Figure 5 、 Figure 6 and Figure 9 Some embodiments of the present invention further provide a method for preparing a wafer reconstruction structure, comprising: Step S10, providing a first wafer; In step S20 , a dummy edge structure is provided on the first wafer, wherein the dummy edge structure has a through-hole structure penetrating the thickness direction, to obtain a wafer reconstruction structure including the dummy edge structure and the first wafer.

[0061] For details, see Figure 5 (a1) or Figure 6 In (a1), a first wafer 50 is provided; in some embodiments, the surface of the first wafer 50 further comprises a second adhesive material 20. In some embodiments, see Figure 5 In (a1), the second adhesive material 20 completely covers the surface of the first wafer 50. In some embodiments, see Figure 6 In (a1), the second adhesive material 20 is located on the surface of the first wafer 50 for connection with the edge dummy structure 30. In some embodiments, the second adhesive material 20 can be any one of a thermal release film, an ABF film, a molding compound, an underfill material, an edge dam adhesive, and a temporary bonding adhesive.

[0062] In some embodiments, the thermal release film is a special adhesive film that has adhesive strength at room temperature, but when heated to a certain temperature, the adhesive strength disappears. ABF film is usually made of polyimide film. Molding materials mainly include epoxy resin, phenolic resin and polyphenylene sulfide (PPS). Bottom fillers include epoxy resin, silicone and acrylate. Edge dam glue is usually a high-viscosity epoxy resin or silicone gel with good adhesion and shape retention. Temporary bonding glue includes acrylate, silicone and polyimide.

[0063] In some embodiments, the first wafer 50 may be a thin slice of a cylindrical semiconductor crystal, used as a substrate in integrated circuit manufacturing. Because its shape is typically circular, it is referred to as a wafer, but in other embodiments, it may have other shapes. The first wafer 50 may be a silicon wafer, a silicon oxide wafer, a silicon carbide wafer, a gallium nitride wafer, a gallium arsenide wafer, an indium phosphide wafer, a lithium tantalate wafer, a substrate, or the like. In some embodiments, the first wafer 50 is available in diameters of 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, or 12 inches.

[0064] See also Figure 5 (b2) or Figure 6 In (b2), an edge dummy film structure 30 is provided on the first wafer 50, and the edge dummy film structure 30 has a through-hole structure 31 extending in the thickness direction, thereby obtaining a wafer reconstruction structure including the edge dummy film structure 30 and the first wafer 10, wherein the edge dummy film structure 30 is used to reduce the warping of the first wafer 10; wherein the edge dummy film structure 30 is arranged around the edge portion of the surface of the first wafer 50, and is used to reduce the warping of the first wafer 50.

[0065] In some embodiments, the edge dummy structure 30 includes at least one second wafer 301, and the step of providing the edge dummy structure on the first wafer includes: providing at least one second wafer 301; cutting the at least one second wafer 301 to form a through hole 311 extending through the thickness direction of the second wafer 301; and superimposing the cut second wafer 301 on the first wafer 50, wherein, when there are at least two second wafers 301, the at least two second wafers 301 are superimposed, and the corresponding through holes 311 in the at least two second wafers 301 are connected to form a corresponding through hole structure 31. In some embodiments, when there are at least two second wafers 301, the at least two second wafers 301 have the same shape and size, and the corresponding through holes in the at least two second wafers 301 have the same shape, size, and position.

[0066] In some embodiments, the second wafer 301 can be a thin slice of a cylindrical semiconductor crystal. Since its shape is usually circular, it is called a wafer, but in other embodiments, it can be of other shapes. In some embodiments, the through hole can be formed by laser cutting the second wafer. In some embodiments, the second wafer can be a silicon wafer, a silicon oxide wafer, a silicon carbide wafer, a gallium nitride wafer, a gallium arsenide wafer, an indium phosphide wafer, a lithium tantalate wafer, a substrate, etc. of any size including but not limited to 2 inches, 4 inches, 6 inches, 8 inches, 12 inches, 13 inches, 16 inches and 18 inches, and can also include solid films such as ABF films and DAF films of any thickness; in some embodiments, when the second wafer 301 is at least two pieces, the materials of the at least two second wafers 301 can be the same or multiple.

[0067] In some embodiments, when the second wafer 301 is one of 4 inches, 6 inches, 8 inches, 12 inches, 13 inches, 16 inches, and 18 inches, the first wafer may be a corresponding 2 inches, 4 inches, 6 inches, 8 inches, 12 inches, 13 inches, or 16 inches. In some embodiments, the edge dummy structure 30 typically has only a basic structure or several layers of graphics, without complex circuits or components. The first wafer 50 is a mass production wafer: it includes a complete process flow, has various graphics and structures, and is used to manufacture actual chips.

[0068] In some embodiments, see Figure 5 and Figure 6 The cross-sectional outer contour size and cross-sectional outer contour shape of the edge dummy structure 30 and the first wafer 50 are the same.

[0069] In some embodiments, see Figure 4The edge dummy structure 30 further includes an edge structure 32 arranged around the edge portion of the surface of the first wafer 50, and the through hole structure 31 is located inside the edge structure 32. This further reduces the warping of the first wafer 50. In some embodiments, the edge structure can be Figure 4 Various different shapes are listed in the examples.

[0070] In some embodiments, see Figure 4 In (a), the through-hole structure 31 is a circular through-hole structure; in some embodiments, see Figure 4 In (d), the through-hole structure 31 is a square through-hole structure.

[0071] In some embodiments, there is at least one through-hole structure 31 .

[0072] In some embodiments, see Figure 4 In (a) and (d), when there is only one through-hole structure 31, the through-hole structure 31 is located in the middle of the edge dummy structure 30. For example, see Figure 2 and Figure 3 The through-hole structure 31 is located in the middle of the edge dummy film structure 30. The edge dummy film structure 30 has an edge structure located outside the through-hole structure. By surrounding the edge structure on the edge portion of the surface of the first wafer 50, the edge dummy film structure 30 is arranged on the first wafer 50, thereby reducing the warping of the first wafer 50 through the edge dummy film structure 30.

[0073] In some embodiments, see Figure 4 In (b) and (e), when there are multiple through-hole structures 31 , the multiple through-hole structures 31 have the same size, and the multiple through-hole structures 31 are distributed in an array or in a ring.

[0074] In some embodiments, see Figure 4 In (c) and (f), when there are multiple through-hole structures 31, the through-hole structures 31 include a first through-hole structure located in the middle of the edge dummy structure 30 and multiple second through-hole structures distributed around the first through-hole structure. The shapes of the first through-hole structure and the second through-hole structure can be the same or different. For example, the first through-hole structure can be a square through-hole structure or a circular through-hole structure, while the second through-hole structure can be a corresponding circular through-hole structure or square through-hole structure. In some embodiments, the sizes of the first through-hole structure and the second through-hole structure can be the same or different. For example, the size of the first through-hole structure is larger than the size of the second through-hole structure.

[0075] Of course, in other embodiments, the shape of the through-hole structure is not limited to Figure 4 Shapes listed in, such as round, square or rectangular in various standard wafer sizes; combinations of single or multiple shapes including matrix or ring distribution.

[0076] In some embodiments, see Figure 7 When the second wafer consists of at least two pieces, the step of stacking the cut second wafer on the first wafer includes: Figure 7 (a1) and (b1) in FIG. 8 and (a2) and (b2) in FIG. 8 , (a1) and (a2) are top views, (b1) is a cross-sectional view of (a1), and (b2) is a cross-sectional view of (a2). At least two second wafers 301 after cutting are stacked to form an edge dummy structure 30, and corresponding through holes 311 in at least two second wafers 301 are connected to form corresponding through hole structures 31; see Figure 7 (a3) and (b3) in FIG. 5 , (a3) ​​is a top view, and (b3) is a cross-sectional view of (a3), in which the edge dummy structure 30 is disposed on the first wafer 50 .

[0077] In some embodiments, see Figure 8 , Figure 8 (a1), (a2) and (a3) ​​are top views, (b1) is a cross-sectional view of (a1), (b2) is a cross-sectional view of (a2), and (b3) is a cross-sectional view of (a3). When there are at least two second wafers 301, the step of superimposing the cut second wafers 301 on the first wafer 50 includes: sequentially superimposing the at least two cut second wafers 301 on the first wafer 50 to form an edge dummy structure 30 located on the first wafer 50, and the corresponding through holes 311 on the at least two second wafers 301 are connected to form a corresponding through hole structure 31.

[0078] In some embodiments, adjacent second wafers 301 are connected by a first adhesive material 40, and the second wafer 301 and the first wafer 50 are connected by a second adhesive material 20. In some embodiments, the first adhesive material 40 is any one of a thermal release film, an ABF film, a molding compound, an underfill material, an edge dam adhesive, and a temporary bonding adhesive. In some embodiments, the first adhesive material 40 and the second adhesive material 20 can be made of the same or different materials.

[0079] Although the present invention has been disclosed above in terms of preferred embodiments, this is not intended to limit the present invention. Any person skilled in the art may make possible changes and modifications to the technical solutions of the present invention by utilizing the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention shall fall within the scope of protection of the technical solutions of the present invention.

Claims

1. A wafer reconstruction structure, characterized in that: include: First wafer; An edge dummy sheet structure having a through-hole structure extending through the thickness direction; Wherein, the edge dummy structure is fixed on the surface of the first wafer.

2. The wafer reconstruction structure according to claim 1, characterized in that: The edge dummy structure further includes an edge structure arranged around the edge portion of the first wafer surface, and the through-hole structure is located inside the edge structure.

3. The wafer reconstruction structure according to claim 1, wherein: The edge dummy structure includes at least one second wafer, which has a through hole running through the thickness direction. When there are at least two second wafers, at least two second wafers are stacked, and the corresponding through holes in at least two second wafers are connected to form a corresponding through hole structure.

4. The wafer reconstruction structure according to claim 3, characterized in that: When there are at least two second wafers, adjacent second wafers are connected by a first adhesive material.

5. The wafer reconstruction structure according to claim 4, characterized in that: The first adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam glue, and a temporary bonding glue.

6. The wafer reconstruction structure according to claim 3, characterized in that: When there are at least two second wafers, the at least two second wafers have the same shape and size, and the corresponding through holes in the at least two second wafers have the same shape, size and position.

7. The wafer reconstruction structure according to claim 1, characterized in that: The through hole structure is a circular through hole structure or a square through hole structure.

8. The wafer structure according to claim 1, wherein: There is at least one through-hole structure.

9. The wafer reconstruction structure according to claim 8, characterized in that: When there is one through-hole structure, the through-hole structure is located in the middle of the edge dummy structure.

10. The wafer reconstruction structure according to claim 8, characterized in that: When there are multiple through-hole structures, the multiple through-hole structures have the same size, and the multiple through-hole structures are distributed in an array or in a ring shape on the inner side of the edge dummy structure.

11. The wafer reconstruction structure according to claim 8, wherein: When there are multiple through-hole structures, the through-hole structures include a first through-hole structure located in the middle of the edge dummy structure and a plurality of second through-hole structures distributed around the first through-hole structure.

12. The wafer reconstruction structure according to claim 1, wherein: The edge dummy structure has the same cross-sectional outer contour shape and cross-sectional outer contour size as the first wafer.

13. The wafer reconstruction structure according to claim 1, wherein: The first wafer surface and the edge dummy structure are fixed to each other via a second adhesive material.

14. The wafer reconstruction structure according to claim 13, wherein: The second adhesive material covers the first wafer surface or the second adhesive material is located on a portion of the first wafer surface that is used to connect with the edge dummy structure.

15. The wafer reconstruction structure according to claim 13, wherein: The second adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam adhesive, and a temporary bonding adhesive.

16. A method for preparing a wafer reconstruction structure, characterized in that: include: providing a first wafer; An edge dummy structure is arranged on the first wafer, wherein the edge dummy structure has a through-hole structure penetrating in the thickness direction, so as to obtain a wafer reconstruction structure including the edge dummy structure and the first wafer.

17. The method for preparing a wafer reconstruction structure according to claim 16, wherein: The edge dummy structure further includes an edge structure arranged around the edge portion of the first wafer surface, and the through-hole structure is located inside the edge structure.

18. The method for preparing a wafer reconstruction structure according to claim 16, wherein: The edge dummy structure includes at least one second wafer, and the step of arranging the edge dummy structure on the first wafer includes: providing at least one second wafer; cutting at least one second wafer to form a through hole in the second wafer extending through the second wafer in a thickness direction; The cut second wafer is stacked on the first wafer, wherein when there are at least two second wafers, at least two second wafers are stacked, and corresponding through holes in at least two second wafers are connected to form corresponding through hole structures.

19. The method for preparing a wafer reconstruction structure according to claim 18, wherein: When the second wafer consists of at least two pieces, the step of superimposing the cut second wafer on the first wafer includes: The at least two second wafers after being cut are stacked to form an edge dummy wafer structure, and the corresponding through holes in the at least two second wafers are connected to form a corresponding through hole structure; The edge dummy structure is arranged on the first wafer.

20. The method for preparing a wafer reconstruction structure according to claim 18, wherein: When the second wafer consists of at least two pieces, the step of superimposing the cut second wafer on the first wafer includes: At least two cut second wafers are sequentially stacked on the first wafer to form an edge dummy structure on the first wafer, and corresponding through holes on at least two second wafers are connected to form a corresponding through hole structure.

21. The method for preparing a wafer reconstruction structure according to claim 19 or 20, wherein: The adjacent second wafers are connected by a first adhesive material.

22. The method for preparing a wafer reconstruction structure according to claim 21, wherein: The first adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam glue, and a temporary bonding glue.

23. The method for preparing a wafer reconstruction structure according to claim 18, wherein: The surface of the first wafer also has a second adhesive material, and the second wafer and the first wafer are connected via the second adhesive material.

24. The method for preparing a wafer reconstruction structure according to claim 23, wherein: The second adhesive material covers the first wafer surface or the second adhesive material is located on a portion of the first wafer surface that is used to connect with the edge dummy structure.

25. The method for preparing a wafer reconstruction structure according to claim 23, wherein: The second adhesive material is any one of a thermal peeling film, an ABF film, a molding compound, a bottom filling material, an edge dam adhesive, and a temporary bonding adhesive.

26. The method for preparing a wafer reconstruction structure according to claim 18, wherein: When there are at least two second wafers, the at least two second wafers have the same shape and size, and the corresponding through holes in the at least two second wafers have the same shape, size and position.

27. The method for preparing a wafer reconstruction structure according to claim 16, wherein: The through hole structure is a circular through hole structure or a square through hole structure.

28. The method for preparing a wafer structure according to claim 16, wherein: There is at least one through-hole structure.

29. The method for preparing a wafer reconstruction structure according to claim 28, wherein: When there is one through-hole structure, the through-hole structure is located in the middle of the edge dummy structure.

30. The method for preparing a wafer reconstruction structure according to claim 28, wherein: When there are multiple through-hole structures, the sizes of the multiple through-hole structures are the same, and the multiple through-hole structures are distributed in an array or in a ring shape.

31. The method for preparing a wafer reconstruction structure according to claim 28, wherein: When there are multiple through-hole structures, the through-hole structures include a first through-hole structure located in the middle of the edge dummy structure and a plurality of second through-hole structures distributed around the first through-hole structure.

32. The method for preparing a wafer reconstruction structure according to claim 16, wherein: The edge dummy structure has the same cross-sectional outer contour shape and cross-sectional outer contour size as the first wafer.

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