Electrostatic chuck, reaction chamber and semiconductor processing equipment

Abstract

The invention provides an electrostatic chuck, a reaction chamber and semiconductor processing equipment, and the electrostatic chuck comprises a housing which comprises a first wafer bearing surface and at least one second wafer bearing surface intersecting with the first wafer bearing surface; the first adsorption electrode and the at least one second adsorption electrode are located in the shell; the first adsorption electrode corresponds to the first wafer bearing surface, and each second adsorption electrode corresponds to one second wafer bearing surface.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to an electrostatic chuck, a reaction chamber, and semiconductor processing equipment. Background Art

[0002] During the semiconductor device manufacturing process, wafers undergo multiple process steps, each performed on a different machine. Each machine typically requires a wafer carrier to support the wafers within the reaction chamber. The carrier's capacity directly impacts the wafer output per hour (WPH). Therefore, to improve the machine's WPH, the wafer carrier's capacity must be increased. Summary of the Invention

[0003] In view of this, embodiments of the present disclosure provide an electrostatic chuck, a reaction chamber, and a semiconductor processing device to solve at least one problem existing in the prior art.

[0004] To achieve the above objectives, the technical solution of the embodiment of the present disclosure is implemented as follows:

[0005] In a first aspect, an embodiment of the present disclosure provides an electrostatic chuck, comprising:

[0006] a housing, the housing comprising a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface;

[0007] A first adsorption electrode and at least one second adsorption electrode are located in the shell; the first adsorption electrode corresponds to the first wafer carrying surface, and each second adsorption electrode corresponds to one second wafer carrying surface.

[0008] In an optional embodiment, the housing includes:

[0009] A plurality of second wafer carrying surfaces intersecting with the first wafer carrying surface.

[0010] In an optional embodiment, the housing further includes:

[0011] Bottom lead surface; the conductive connection point between the first adsorption electrode and the second adsorption electrode is located on the bottom lead surface.

[0012] In an optional embodiment, the electrostatic chuck further comprises:

[0013] A first radio frequency electrode is located in the housing.

[0014] In an optional embodiment, the electrostatic chuck further comprises:

[0015] A heater and a cooling pipe are located in the shell; the heater includes a portion corresponding to the first wafer carrying surface and a portion corresponding to the second wafer carrying surface; the cooling pipe includes a portion corresponding to the first wafer carrying surface and a portion corresponding to the second wafer carrying surface; the inlet and outlet of the cooling pipe are located at the bottom lead-out surface.

[0016] In an optional embodiment, the top corners of the shell include rounded corners.

[0017] In an optional embodiment, the shape of the shell includes a regular tetrahedron, a regular hexahedron, a regular dodecahedron, or a prism.

[0018] In a second aspect, an embodiment of the present disclosure provides a reaction chamber, comprising a chamber body and an electrostatic chuck located in an internal cavity of the chamber body; wherein,

[0019] The electrostatic chuck comprises: a housing and a first adsorption electrode and at least one second adsorption electrode located in the housing; the housing comprises a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface; the first adsorption electrode corresponds to the first wafer carrying surface, and each second adsorption electrode corresponds to one of the second wafer carrying surfaces;

[0020] The chamber body includes a plurality of gas inlets in communication with the interior cavity of the chamber body.

[0021] In an optional embodiment, the housing includes:

[0022] A plurality of second wafer carrying surfaces intersecting with the first wafer carrying surface.

[0023] In an optional embodiment, the housing further includes:

[0024] Bottom lead surface; the conductive connection point between the first adsorption electrode and the second adsorption electrode is located on the bottom lead surface.

[0025] In an optional embodiment, the chamber body further includes:

[0026] A gas outlet is communicated with the internal cavity of the chamber body; the gas outlet is located on the bottom surface of the chamber body and is connected to a gas valve.

[0027] In an optional embodiment, the electrostatic chuck further comprises:

[0028] A first radio frequency electrode is located in the housing.

[0029] In an optional embodiment, the reaction chamber further comprises:

[0030] A second RF electrode is located on the inner wall of the chamber body; one of the first RF electrode and the second RF electrode is connected to a RF power supply, and the other of the first RF electrode and the second RF electrode is grounded.

[0031] In an optional embodiment, the shape of the shell is the same as the shape of the chamber body.

[0032] In an optional embodiment, the plurality of gas inlets are respectively located at respective top corners of the chamber body.

[0033] In an optional embodiment, the plurality of gas inlets are respectively located on the top wall and each side wall of the chamber body.

[0034] In an optional embodiment, the reaction chamber further comprises:

[0035] An induction coil is located outside the chamber body; the induction coil is connected to a radio frequency power supply.

[0036] In a third aspect, an embodiment of the present disclosure provides a semiconductor processing device, comprising the electrostatic chuck in any of the above embodiments or the reaction chamber in any of the above embodiments.

[0037] In the technical solution provided in the present disclosure, the shell of the electrostatic chuck includes a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface. The electrostatic chuck also includes a first adsorption electrode and at least one second adsorption electrode located in the shell. The first adsorption electrode corresponds to the first wafer carrying surface, and each second adsorption electrode corresponds to a second wafer carrying surface. Thus, the electrostatic chuck can carry at least two wafers, thereby improving the WPH of the machine using the electrostatic chuck as a wafer carrying device and improving the preparation efficiency of semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A three-dimensional schematic diagram of an electrostatic chuck provided in an embodiment of the present disclosure Figure 1 ;

[0039] Figure 2 for Figure 1 Schematic diagram of a cross section along line AA' and perpendicular to the Z direction;

[0040] Figure 3 for Figure 1 Schematic diagram of a cross section along line BB' and perpendicular to the Y direction;

[0041] Figure 4 A schematic plan view of an electrostatic chuck provided in an embodiment of the present disclosure;

[0042] Figure 5A three-dimensional schematic diagram of an electrostatic chuck provided in an embodiment of the present disclosure Figure 2 ;

[0043] Figure 6 A three-dimensional schematic diagram of an electrostatic chuck provided in an embodiment of the present disclosure Figure 3 ;

[0044] Figure 7 A schematic three-dimensional diagram of a reaction chamber provided in an embodiment of the present disclosure;

[0045] Figure 8 A schematic diagram of a reaction chamber according to an embodiment of the present disclosure Figure 1 ;

[0046] Figure 9 A schematic diagram of a reaction chamber according to an embodiment of the present disclosure Figure 2 ;

[0047] Figure 10 A schematic diagram of a reaction chamber according to an embodiment of the present disclosure Figure 3 ;

[0048] Figure 11 A schematic diagram of a reaction chamber according to an embodiment of the present disclosure Figure 4 ;

[0049] Figure 12 A schematic diagram of a reaction chamber according to an embodiment of the present disclosure Figure 5 ;

[0050] Figure 13 A schematic diagram of a reaction chamber according to an embodiment of the present disclosure Figure 6 . DETAILED DESCRIPTION

[0051] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments described herein. Instead, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0052] In the following description, numerous specific details are provided to provide a more thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure can be practiced without one or more of these details. In other instances, certain technical features known in the art are not described to avoid confusion with the present disclosure; that is, all features of actual embodiments are not described herein, nor are well-known functions and structures described in detail.

[0053] In the drawings, like reference numerals refer to like elements throughout.

[0054] It should be understood that spatial relationship terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, then the elements or features described as "under the other elements" or "under it" or "under it" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" can include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial description terms used herein are interpreted accordingly.

[0055] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present disclosure. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0056] During the preparation of semiconductor devices, wafers need to undergo multiple process steps. Different process steps are carried out in different machines. A wafer carrier is usually required in the machine to carry the wafer in the reaction chamber. The carrying capacity of the wafer carrier will have a direct impact on the WPH of the machine.

[0057] Electrostatic chuck (ESC) is a wafer carrying device widely used in various process machines. It can use electrostatic attraction to adsorb wafers to fix, support and transport wafers in the reaction chamber, and can control the temperature of the wafer. Traditional electrostatic chucks are mostly flat and can only carry one wafer at a time, resulting in a lower WPH of the machine using electrostatic chuck as a wafer carrying device. Therefore, how to improve the wafer carrying capacity of the electrostatic chuck has become a problem that needs to be solved urgently. In this regard, the present disclosure proposes the following implementation methods.

[0058] The present disclosure provides an electrostatic chuck, which includes: a shell, the shell including a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface; a first adsorption electrode and at least one second adsorption electrode located in the shell; the first adsorption electrode corresponds to the first wafer carrying surface, and each second adsorption electrode corresponds to one second wafer carrying surface.

[0059] In the embodiment of the present disclosure, the electrostatic chuck includes a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface, and each wafer carrying surface has a corresponding adsorption electrode, that is, the first wafer carrying surface and the second wafer carrying surface can both adsorb wafers through electrostatic attraction. Thus, the electrostatic chuck can carry at least two wafers, thereby improving the WPH of the machine using the electrostatic chuck as a wafer carrying device.

[0060] Figure 1 A three-dimensional schematic diagram of an electrostatic chuck provided in an embodiment of the present disclosure Figure 1 , Figure 2 for Figure 1 Schematic diagram of the cross section along line AA' and perpendicular to the Z direction, Figure 3 for Figure 1 Schematic diagram of the cross section along line BB' and perpendicular to the Y direction. Here, for easy observation, Figure 1 The electrostatic chuck in the figure is a perspective effect.

[0061] Combined with reference Figures 1 to 3 The electrostatic chuck 10 includes: a shell 100, the shell 100 includes a first wafer carrying surface 101 and four second wafer carrying surfaces 102 intersecting with the first wafer carrying surface 101; a first adsorption electrode 111 and four second adsorption electrodes 112 located in the shell 100, the first adsorption electrode 111 corresponds to the first wafer carrying surface 101, and each second adsorption electrode 112 corresponds to a second wafer carrying surface 102.

[0062] In the embodiment of the present disclosure, Figure 1 As shown, the shell 100 is in the shape of a regular hexahedron, and the shell 100 includes four second wafer carrying surfaces 102 perpendicular to the first wafer carrying surface 101. The electrostatic chuck 10 can carry five wafers W at the same time. Compared with the planar electrostatic chuck, the electrostatic chuck provided in the embodiment of the present disclosure has a three-dimensional configuration, including multiple wafer carrying surfaces, which can effectively improve the WPH of the machine using the electrostatic chuck as a wafer carrying device.

[0063] In some embodiments, in conjunction with reference Figure 1 and Figure 3 The housing 100 further includes a bottom lead-out surface 103, where the conductive connection between the first adsorption electrode 111 and the second adsorption electrode 112 is located. Figure 3 A conductive connection 113 of the second adsorption electrode 112 is shown in FIG.

[0064] In the disclosed embodiment, the conductive connection points of the first adsorption electrode 111 and the second adsorption electrode 112 are both located on the bottom lead-out surface 103, and the conductive connection points can be connected to an external power source. Taking the first adsorption electrode 111 and the wafer W located on the first wafer support surface 101 as an example, when a bias voltage is applied to the first adsorption electrode 111, the first adsorption electrode 111 will carry an electric charge, thereby inducing the side of the wafer W that is in direct contact with the first wafer support surface 101 to generate an induced charge with a polarity opposite to the charge carried by the first adsorption electrode 111. In this case, the first adsorption electrode 111 and the wafer W can serve as the two plates of a capacitor, and the housing 100 located between the first adsorption electrode 111 and the wafer W can serve as a capacitor dielectric layer. An electrostatic attraction is generated between the first adsorption electrode 111 and the wafer W, and the electrostatic attraction is proportional to the square of the voltage applied to the first adsorption electrode 111 and inversely proportional to the distance between the first adsorption electrode 111 and the wafer W.

[0065] In some specific examples, the first adsorption electrode 111 is parallel to the first wafer carrying surface 101, and the second adsorption electrode 112 is parallel to the corresponding second wafer carrying surface 102. Therefore, for an electrostatic chuck with a three-dimensional configuration, each wafer carrying surface can provide an electrostatic attraction perpendicular to the wafer for the wafer it carries.

[0066] In some specific examples, the material of the shell 100 includes materials that are resistant to both high and low temperatures to adapt to different application scenarios. For example, the shell 100 may include ceramic materials, and the ceramic materials include one or more of aluminum oxide, aluminum nitride, silicon oxide, silicon carbide, silicon nitride, titanium oxide, and zirconium oxide.

[0067] In some embodiments, in conjunction with reference Figure 2 and Figure 3 The electrostatic chuck 10 further includes a first RF electrode 120 located in the housing 100. The first RF electrode 120 may include a conductive material and may be connected to a radio frequency (RF) power source.

[0068] In some embodiments, the first RF electrode 120 may further include a portion extending beyond the bottom lead-out surface 103 along the Z direction.

[0069] In some specific examples, the first RF electrode 120 may be a copper rod.

[0070] In some embodiments, in conjunction with reference Figure 2 and Figure 3The electrostatic chuck 10 also includes: a heater 130 and a cooling pipe 140 located in the shell 100, the heater 130 includes a portion corresponding to the first wafer supporting surface 101 and a portion corresponding to the second wafer supporting surface 102, the cooling pipe 140 includes a portion corresponding to the first wafer supporting surface 101 and a portion corresponding to the second wafer supporting surface 102, a conductive connection 131 of the heater 130, and an inlet 141 and an outlet 142 of the cooling pipe 140 are located on the bottom lead-out surface 103.

[0071] In some specific examples, the heating power of the part of the heater 130 corresponding to the first wafer supporting surface 101 and the heating power of the part of the heater 130 corresponding to the second wafer supporting surface 102 can be adjusted separately, and the flow rate of the cooling gas or cooling liquid of the part of the cooling pipe 140 corresponding to the first wafer supporting surface 101 and the flow rate of the cooling gas or cooling liquid of the part of the cooling pipe 140 corresponding to the second wafer supporting surface 102 can be adjusted separately.

[0072] In some embodiments, the electrostatic chuck 10 may also include: multiple temperature sensors located in the shell 100, and the multiple temperature sensors can be respectively arranged at positions close to each wafer supporting surface to monitor the temperature of the first wafer supporting surface 101 and the second wafer supporting surface 102. The monitoring results can be used as a basis for adjusting the heating power of the heater 130 or the flow rate of the cooling gas or cooling liquid in the cooling pipe 140, so as to regulate the temperature of the wafer supporting surface and the wafer W.

[0073] In the embodiment of the present disclosure, for each wafer carrying surface of the electrostatic chuck 10, there is a corresponding adsorption electrode and a temperature control unit including part of the cooling pipe, part of the heater and the temperature sensor, so that each wafer carrying surface can use electrostatic attraction to adsorb the wafer W and control the temperature of the adsorbed wafer W.

[0074] In the embodiment of the present disclosure, the bottom lead-out surface 103 of the electrostatic chuck 10 can be used to set multiple conductive connections and the entrance and exit of the cooling pipe 140. That is, the bottom lead-out surface 103 can serve as the lead-out surface of the first adsorption electrode 111, the second adsorption electrode 112, the first RF electrode 120, the heater 130, and the cooling pipe 140, so that each electrode located in the housing 100 can be electrically connected to a power source outside the electrostatic chuck 10, and the cooling pipe 140 located in the housing 100 can be connected to a cooling liquid supply device or a cooling gas supply device outside the electrostatic chuck 10.

[0075] In some specific examples, Figure 4 A schematic plan view of an electrostatic chuck provided in an embodiment of the present disclosure is shown in FIG. Figure 4As shown, the top corners of the shell 100 of the electrostatic chuck 10 may include rounded corners, that is, the top corners and edges of the shell having a regular hexahedron configuration may be rounded, thereby reducing the risk of damage to the wafer W caused by collision with the top corners or edges of the electrostatic chuck 10 when the wafer W is transferred to the electrostatic chuck 10 having a three-dimensional configuration by a wafer transfer device. In addition, it can also facilitate the diffusion of reaction gases.

[0076] In the above embodiment, the housing 100 of the electrostatic chuck 10 is shaped as a regular hexahedron. In other embodiments, the housing 100 of the electrostatic chuck 10 may have other three-dimensional configurations.

[0077] In some specific examples, Figure 5 A three-dimensional diagram of an electrostatic chuck Figure 2 ,like Figure 5 As shown, the shell of the electrostatic chuck 10 is in the shape of a regular tetrahedron, and the shell includes a first wafer carrying surface 101, two second wafer carrying surfaces 102 intersecting with the first wafer carrying surface 101, and a bottom lead-out surface 103. The electrostatic chuck 10 can carry three wafers W at the same time.

[0078] In some specific examples, Figure 6 A three-dimensional diagram of an electrostatic chuck Figure 3 ,like Figure 6 As shown, the shell of the electrostatic chuck 10 is in the shape of a prism, and the top and bottom surfaces of the prism are both regular hexagons. The shell includes a first wafer carrying surface 101, six second wafer carrying surfaces 102 perpendicular to the first wafer carrying surface 101, and a bottom lead-out surface 103. The electrostatic chuck 10 can carry seven wafers W at the same time.

[0079] In some specific examples, the shape of the shell of the electrostatic chuck can also be a regular dodecahedron. The shell can include a first wafer carrying surface, ten second wafer carrying surfaces intersecting with the first wafer carrying surface, and a bottom lead-out surface. The electrostatic chuck can carry eleven wafers at the same time.

[0080] In the above examples, the common point of the electrostatic chucks with different three-dimensional configurations is that the shell of the electrostatic chuck is provided with an adsorption electrode corresponding to each wafer carrying surface and a temperature control unit composed of part of a heater, part of a cooling pipe and a temperature sensor, so as to provide electrostatic adsorption force to the wafer carried on each wafer carrying surface and control the temperature of the wafer.

[0081] In an embodiment of the present disclosure, an electrostatic chuck with a three-dimensional configuration is provided, including a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface. The electrostatic chuck can carry at least two wafers at the same time. Compared with a planar electrostatic chuck, it can effectively improve the WPH of a machine using the electrostatic chuck as a wafer carrying device, thereby improving the preparation efficiency of semiconductor devices.

[0082] The present disclosure also provides a reaction chamber, including a chamber body and an electrostatic chuck located in the internal cavity of the chamber body, wherein the electrostatic chuck can be the electrostatic chuck in any of the above-mentioned embodiments, including a shell and a first adsorption electrode and at least one second adsorption electrode located in the shell, the shell including a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface, the first adsorption electrode corresponds to the first wafer carrying surface, and each second adsorption electrode corresponds to a second wafer carrying surface; the chamber body includes: a plurality of gas inlets connected to the internal cavity of the chamber body.

[0083] In some embodiments, in conjunction with reference Figures 1 to 3 The electrostatic chuck 10 includes: a shell 100 and a first adsorption electrode 111 and at least one second adsorption electrode 112 located in the shell 100. The shell 100 includes a first wafer carrying surface 101 and at least one second wafer carrying surface 102 intersecting with the first wafer carrying surface 101. The first adsorption electrode 111 corresponds to the first wafer carrying surface 101, and each second adsorption electrode 112 corresponds to a second wafer carrying surface 102.

[0084] In some embodiments, in conjunction with reference Figure 1 and Figure 3 The housing 100 further includes a bottom lead-out surface 103 , and a conductive connection point between the first adsorption electrode 111 and the second adsorption electrode 112 is located on the bottom lead-out surface 103 .

[0085] In some embodiments, in conjunction with reference Figure 2 and Figure 3 The electrostatic chuck 10 further includes a first RF electrode 120 located in the housing 100 .

[0086] In some embodiments, Figure 7 A three-dimensional schematic diagram of a reaction chamber provided in an embodiment of the present disclosure, Figure 8 、 Figure 9 、 Figure 10 、 Figure 11 、 Figure 12 and Figure 13 Schematic diagrams of the reaction chambers provided for some specific examples. Here, for easy observation, Figure 7 The chamber body 201 in the figure is a perspective effect.

[0087] In some embodiments, the shape of the housing 10 may be the same as that of the chamber body 201 .

[0088] In some specific examples, refer to Figure 7 The shape of the shell 10 and the shape of the chamber body 201 can both be a regular hexahedron.

[0089] In other specific examples, the shape of the shell and the shape of the chamber body can both be a regular tetrahedron, a regular dodecahedron, or a prism.

[0090] In some embodiments, in conjunction with reference Figure 7 and Figure 8 The chamber body 201 includes: a plurality of gas inlets 202 communicating with the internal cavity of the chamber body 201 , and the plurality of gas inlets 202 are respectively located at each vertex corner of the chamber body 201 .

[0091] In some embodiments, reference Figure 9 The chamber body 201 includes: a plurality of gas inlets 202 communicating with the internal cavity of the chamber body 201, and the plurality of gas inlets 202 are respectively located on the top wall and each side wall of the chamber body 201. Here, Figure 9 Only three gas inlets 202 are shown in the figure. It can be understood that for the chamber body 201 with a regular hexahedron configuration, gas inlets 202 can be provided on the top wall and the four side walls.

[0092] In some specific examples, refer to Figure 9 , the chamber body 201 and the housing 10 of the electrostatic chuck both include rounded corners.

[0093] In the embodiment of the present disclosure, the electrostatic chuck 10 has a three-dimensional configuration, including a first wafer carrying surface 101 and four second wafer carrying surfaces 102. Gas inlets 202 are arranged at each top corner of the chamber body 201 or on the top wall and each side wall of the chamber body 201, and the reaction gas is introduced simultaneously through multiple gas inlets, so that the gas in the internal cavity of the chamber body 201 can be rapidly diffused, and the wafers on each wafer carrying surface can be in a similar gas environment, so that the uniformity of the reaction can be controlled while improving the WPH.

[0094] In some embodiments, in conjunction with reference Figure 8 、 Figure 9 and Figure 10 The chamber body 201 further includes: a gas outlet 203 communicating with the internal cavity of the chamber body 201 , the gas outlet 203 is located on the bottom surface of the chamber body 201 and connected to the gas valve 301 .

[0095] In some specific examples, such as Figure 10As shown, the gas outlet 203 can be connected to the gas valve 301 through a gas pipeline, and the gas valve 301 can be an APC valve. Figure 11 As shown, the gas valve 301 can be directly arranged below the chamber body 201, and the gas valve 301 can be a VAT valve.

[0096] In some specific examples, the gas valve 301 may be one of a swing valve, a butterfly valve, and a vertical valve.

[0097] In some embodiments, the air valve 301 may be further connected to an air pump device.

[0098] In the embodiment of the present disclosure, the reaction gas can be introduced into the internal cavity of the chamber body 201 from multiple gas inlets 202, and can be extracted from the internal cavity of the chamber body 201 from the gas outlet 203 located at the bottom surface of the chamber body 201. The gas outlet 203 is connected to the gas valve 301, and the gas valve 301 can be used to adjust the gas pressure in the chamber body 201 to meet the different requirements of different process steps for gas pressure.

[0099] In some specific examples, the reaction chamber 20 can be located in a machine that performs a deposition process on the wafer W. The reaction gas of the deposition process can be passed into the internal cavity of the chamber body 201 from multiple gases 202, contacting the multiple wafers W carried by the electrostatic chuck 10, and realizing vapor deposition under specific temperature and air pressure conditions. Here, the temperature can be controlled by the heater 130 located in the shell 100 of the electrostatic chuck 10, and the air pressure can be controlled by the gas valve 301 connected to the gas outlet 203.

[0100] In some specific embodiments, the gas inlet 202 of the reaction chamber 20 can be connected to a plasma generating chamber or an ion generating chamber, and the plasma generated in the plasma generating chamber or the ions generated in the ion generating chamber can enter the internal cavity of the chamber body 201 through multiple gas inlets 202, and contact and react with the multiple wafers W carried by the electrostatic chuck 10.

[0101] In some embodiments, as Figure 12 As shown, the reaction chamber 20 further includes a second RF electrode 401 located on the inner wall of the chamber body 201 .

[0102] In some specific examples, the reaction chamber 20 may include a plurality of second RF electrodes 401 , and each second RF electrode 401 may be parallel to a wafer supporting surface of the electrostatic chuck 10 .

[0103] In some embodiments, in conjunction with reference Figure 3 and Figure 12One of the first RF electrode 120 and the second RF electrode 401 can be connected to an RF power source, and the other of the first RF electrode 120 and the second RF electrode 401 can be grounded, so that an RF electric field can be generated between the first RF electrode 120 and the second RF electrode 401. Therefore, after the reaction gas enters the internal cavity of the chamber body 201 from the multiple gas inlets 202, the reaction gas can be excited into plasma in the RF electric field. The plasma can further contact the surface of the wafer W, thereby reacting with the wafer W supported by the electrostatic chuck 10 to perform an etching process or an ashing process on the wafer W.

[0104] In some embodiments, as Figure 13 As shown, the reaction chamber 20 further includes an induction coil 402 located outside the chamber body 201. The induction coil 402 can be disposed around the chamber body 201. The induction coil 402 can be connected to a radio frequency power supply. After the reaction gas enters the internal cavity of the chamber body 201 from the multiple gas inlets 202 and when the induction coil 402 is excited by the radio frequency power supply, a remote plasma can be induced in the internal cavity of the chamber body 201. The remote plasma can further contact the surface of the wafer W, thereby reacting with the wafer W supported by the electrostatic chuck 10 to perform an etching process or an ashing process on the wafer W.

[0105] In some specific examples, the reaction chamber 20 can be located in a machine such as a Chemical Vapor Deposition (CVD) machine, a Plasma Etching (PE) machine, a Plasma Ashing (PA) machine, or a Reactive Ion Etching (RIE) machine that uses an electrostatic chuck as a wafer carrier, thereby improving the WPH of each machine and improving the preparation efficiency of semiconductor devices.

[0106] The present disclosure further provides a semiconductor processing device, which may include the electrostatic chuck in any of the above embodiments or the reaction chamber in any of the above embodiments.

[0107] In some specific examples, the semiconductor processing equipment may be a chemical vapor deposition machine, a plasma etching machine, a plasma ashing machine, a reactive ion etching machine, or the like, which uses an electrostatic chuck as a wafer carrying device.

[0108] The features disclosed in the several device embodiments provided in this disclosure can be arbitrarily combined without conflict to obtain new device embodiments.

[0109] The above description is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present disclosure, and they should all be covered by the protection scope of the present disclosure.

Claims

1. An electrostatic chuck, characterized in that: include: a housing, the housing comprising a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface; A first adsorption electrode and at least one second adsorption electrode are located in the shell; the first adsorption electrode corresponds to the first wafer carrying surface, and each second adsorption electrode corresponds to one second wafer carrying surface.

2. The electrostatic chuck according to claim 1, wherein: The housing comprises: A plurality of second wafer carrying surfaces intersecting with the first wafer carrying surface.

3. The electrostatic chuck according to claim 1, wherein: The housing further comprises: Bottom lead surface; the conductive connection point between the first adsorption electrode and the second adsorption electrode is located on the bottom lead surface.

4. The electrostatic chuck according to claim 3, wherein: The electrostatic chuck further comprises: A first radio frequency electrode is located in the housing.

5. The electrostatic chuck according to claim 3, wherein: The electrostatic chuck further comprises: A heater and a cooling pipe are located in the shell; the heater includes a portion corresponding to the first wafer carrying surface and a portion corresponding to the second wafer carrying surface; the cooling pipe includes a portion corresponding to the first wafer carrying surface and a portion corresponding to the second wafer carrying surface; the inlet and outlet of the cooling pipe are located at the bottom lead-out surface.

6. The electrostatic chuck according to claim 1, wherein: The top corners of the housing include rounded corners.

7. The electrostatic chuck according to claim 1, wherein: The shape of the shell includes a regular tetrahedron, a regular hexahedron, a regular dodecahedron or a prism.

8. A reaction chamber, characterized in that: comprising a chamber body and an electrostatic chuck located in an interior cavity of the chamber body; wherein, The electrostatic chuck comprises: a housing and a first adsorption electrode and at least one second adsorption electrode located in the housing; the housing comprises a first wafer carrying surface and at least one second wafer carrying surface intersecting with the first wafer carrying surface; the first adsorption electrode corresponds to the first wafer carrying surface, and each second adsorption electrode corresponds to one of the second wafer carrying surfaces; The chamber body includes a plurality of gas inlets in communication with the interior cavity of the chamber body.

9. The reaction chamber according to claim 8, characterized in that: The housing comprises: A plurality of second wafer carrying surfaces intersecting with the first wafer carrying surface.

10. The reaction chamber according to claim 8, characterized in that The housing further comprises: Bottom lead surface; the conductive connection point between the first adsorption electrode and the second adsorption electrode is located on the bottom lead surface.

11. The reaction chamber according to claim 10, characterized in that: The chamber body further comprises: A gas outlet is communicated with the internal cavity of the chamber body; the gas outlet is located on the bottom surface of the chamber body and is connected to a gas valve.

12. The reaction chamber according to claim 10, characterized in that The electrostatic chuck further comprises: A first radio frequency electrode is located in the housing.

13. The reaction chamber according to claim 12, characterized in that: The reaction chamber further comprises: A second RF electrode is located on the inner wall of the chamber body; one of the first RF electrode and the second RF electrode is connected to a RF power supply, and the other of the first RF electrode and the second RF electrode is grounded.

14. The reaction chamber according to claim 8, wherein The shape of the housing is the same as that of the chamber body.

15. The reaction chamber according to claim 8, wherein: The plurality of gas inlets are respectively located at respective corners of the chamber body.

16. The reaction chamber according to claim 8, wherein The plurality of gas inlets are respectively located on the top wall and each side wall of the chamber body.

17. The reaction chamber according to claim 8, wherein The reaction chamber further comprises: An induction coil is located outside the chamber body; the induction coil is connected to a radio frequency power supply.

18. A semiconductor processing device, characterized in that: The electrostatic chuck comprises the electrostatic chuck according to any one of claims 1 to 7 or the reaction chamber according to any one of claims 8 to 17.

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