Electrical connection structure, lower electrode assembly and process chamber

Abstract

The invention discloses an electric connection structure, a lower electrode assembly and a process chamber, the electric connection structure is used for a wafer bearing device, the electric connection structure comprises an insulation base part and a conductive part, the conductive part is used for supplying power to the wafer bearing device, and the insulation base part is used for providing power for the wafer bearing device. The conductive part comprises a first rigid conductive part, a deformable conductive part and a second rigid conductive part which are connected in sequence, the first rigid conductive part and the second rigid conductive part are arranged in the insulating base part in a penetrating manner, the insulating base part is provided with a deformation space, and the deformable conductive part is arranged in the deformation space. According to the scheme, the problem that the wafer bearing device is easy to damage in the prior art can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to an electrical connection structure, a lower electrode assembly and a process chamber. Background Art

[0002] A wafer support device (e.g., an electrostatic chuck (ESC)) can be a device that uses electrostatic force to fix and support a wafer in a semiconductor production process to prevent the wafer from moving or misaligning during processing, or can control the surface temperature of the wafer or provide a bias voltage for the wafer.

[0003] The wafer carrier mainly includes a base and a functional layer (usually a ceramic layer). The base provides support for the functional layer. The functional layer is provided with an electrostatic adsorption electrode, a bias electrode, a heating electrode, etc. The electrostatic adsorption electrode is used to apply electrostatic attraction to the wafer placed on the functional layer. The heating electrode is used to increase the wafer temperature and thus increase the process reaction speed, and then can independently adjust the temperature of different areas on the wafer surface, thereby improving the temperature uniformity of the wafer carrier and thus improving the uniformity of the process. The bias electrode can provide bias for the wafer.

[0004] The electrostatic adsorption electrode, bias electrode, heating electrode, etc. of the wafer carrier device need to be connected to the power supply at the machine end. Therefore, a conductive structure needs to be set at the bottom end of the functional layer to introduce the current at the machine end into the electrostatic adsorption electrode, bias electrode, heating electrode, etc. In the related art, the conductive structure usually adopts a metal rod (such as a copper rod), one end of the metal rod is welded to the connection terminal of the functional layer, and the other end is passed through the base for electrical connection with the machine end. However, in certain processes (such as etching), the process temperature required is relatively high, for example, the temperature can reach about 350°C. Due to the large thermal expansion coefficient of the metal, a large expansion force will be generated in the metal rod, which will be directly applied to the functional layer, which can easily cause the functional layer to be damaged and cause damage to the wafer carrier device. Summary of the Invention

[0005] The present invention discloses an electrical connection structure, a lower electrode assembly and a process chamber, so as to solve the problem that a wafer carrying device is easily damaged in the related art.

[0006] In order to solve the above-mentioned technical problems, the present invention is achieved as follows:

[0007] In a first aspect, the present application discloses an electrical connection structure for a wafer carrier, the electrical connection structure comprising an insulating base and a conductive portion, wherein:

[0008] The conductive part is used to supply power to the wafer carrying device, and the conductive part includes a first rigid conductive part, a deformable conductive part and a second rigid conductive part connected in sequence. The first rigid conductive part and the second rigid conductive part are passed through the insulating base. The insulating base has a deformation space, and the deformable conductive part is arranged in the deformation space.

[0009] In a second aspect, the present application further discloses a lower electrode assembly, the disclosed lower electrode assembly comprising: a wafer carrying device and the electrical connection structure described in the first aspect;

[0010] The wafer carrying device includes a base and a functional layer superimposed and connected to the base, an electrode is arranged in the functional layer, and the electrode has a connecting terminal. The base has a accommodating space, at least part of the electrical connection structure is located in the accommodating space, and the second rigid conductive part is electrically connected to the connecting terminal.

[0011] In a third aspect, the present application further discloses a process chamber, which includes a cavity and a lower electrode assembly disposed in the cavity, wherein the lower electrode assembly is the lower electrode assembly described in the second aspect.

[0012] The technical solution adopted by the present invention can achieve the following technical effects:

[0013] The electrical connection structure disclosed in the embodiment of the present application is provided with a first rigid conductive member, a deformable conductive member, and a second rigid conductive member connected in sequence, and a deformation space is opened in the insulating base, so that the deformable conductive member is arranged in the deformation space, so that the machine end is electrically connected to the electrode on the wafer carrier through the first rigid conductive member, the deformable conductive member, and the second rigid conductive member in sequence, thereby realizing power supply to the wafer carrier. Since the first rigid conductive member and the second rigid conductive member are connected by the deformable conductive member, when the ambient temperature in the process chamber is at a high temperature, if the second rigid conductive member expands due to heat, the expansion force of the second rigid conductive member will act on the deformable conductive member, thereby reducing the expansion force acting on the wafer carrier through the deformation of the deformable conductive member, thereby preventing damage to the wafer carrier.

[0014] Moreover, when the first rigid conductive part is plugged into the machine end to achieve electrical connection, if the plugging force is large, the deformation of the deformable conductive part can be used to buffer the force acting on the wafer supporting device, thereby preventing the large plugging force between the first rigid conductive part and the machine end from causing damage to the wafer supporting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of the coordination between the electrical connection structure disclosed in an embodiment of the present invention and the connection terminals of the functional layer;

[0016] Figure 2 A three-dimensional diagram of an electrical connection structure disclosed in an embodiment of the present invention;

[0017] Figure 3 A schematic structural diagram of an electrical connection structure disclosed in an embodiment of the present invention;

[0018] Figure 4 A schematic structural diagram of a second base disclosed in an embodiment of the present invention;

[0019] Figure 5 A three-dimensional diagram of the second base portion and the first base portion in cooperation with each other according to an embodiment of the present invention;

[0020] Figure 6 A schematic diagram of the second base portion and the first base portion in cooperation with each other according to an embodiment of the present invention;

[0021] Figure 7 is a schematic diagram of the connection between the first rigid conductive member and the flexible conductive member;

[0022] Figure 8 is a schematic diagram of the connection between the first rigid conductive member, the second rigid conductive member and the flexible conductive member;

[0023] Figure 9 Schematic diagram of another electrical connection structure cooperating with the connection terminals of the functional layer.

[0024] Description of reference numerals:

[0025] 100-Insulation base,

[0026] 101-deformation space, 110-first base, 111-installation groove, 112-first through hole, 113-first limit portion, 120-second base, 121-partition, 121a-subspace, 122-installation portion, 123-connecting portion, 130-third base, 131-second through hole,

[0027] 210-first rigid conductive member, 211-welding groove, 220-second rigid conductive member, 230-flexible conductive member, 240-conductive spring,

[0028] 300-thermal insulation,

[0029] 400-Insulation layer,

[0030] 500-functional layer, 510-connection terminal,

[0031] 600-base,

[0032] 710-spring washer, 720-flat washer. DETAILED DESCRIPTION

[0033] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0034] The technical solutions disclosed in various embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0035] When semiconductor process equipment performs processes on wafers (such as plasma etching (ETCH) process, physical vapor deposition (PVD) process, chemical vapor deposition (CVD) process, etc.), the wafers usually need to be transferred to the process chamber and placed on a wafer carrier. The wafer carrier can support and fix the wafer to prevent the wafer from moving or misaligning during the process. The wafer carrier can also control the surface temperature of the wafer placed on it and provide bias for the wafer.

[0036] The wafer carrier usually fixes the wafer by adsorbing the wafer on the wafer carrier through an electrostatic adsorption electrode. The wafer carrier usually heats the wafer through a heating electrode. The wafer carrier can provide a bias voltage to the wafer through a bias electrode. However, the electrostatic adsorption electrode, heating electrode, bias electrode, etc. of the wafer carrier all need to be powered by a power supply at the machine end. The electrostatic adsorption electrode, heating electrode, bias electrode, etc. can be connected to a connection terminal 510. The electrical connection structure disclosed in the embodiment of the present application is provided on the wafer carrier for electrically connecting the connection terminal 510 to the machine end. It is a structure for introducing current from the machine end into the electrostatic adsorption electrode, heating electrode, bias electrode, etc. of the wafer carrier.

[0037] Please refer to Figures 1 to 3 An embodiment of the present invention discloses an electrical connection structure for a wafer carrier device. The disclosed electrical connection structure includes an insulating base 100 and a conductive part.

[0038] The conductive portion is used to supply power to the wafer carrier. The disclosed conductive portion includes a first rigid conductive member 210, a deformable conductive member, and a second rigid conductive member 220, which are sequentially connected. The first rigid conductive member 210 and the second rigid conductive member 220 are disposed through an insulating base 100. The insulating base 100 has a deformable space 101, within which the deformable conductive member is disposed and can deform.

[0039] Specifically, the first rigid conductive member 210 can be used to electrically connect to the machine end (ie, the power supply end), and the second rigid conductive member can be used to electrically connect to the electrode on the wafer carrier, thereby realizing power supply to the wafer carrier.

[0040] The electrical connection structure disclosed in the embodiment of the present application is provided with a first rigid conductive member 210, a deformable conductive member, and a second rigid conductive member 220 connected in sequence, and a deformation space 101 is opened in the insulating base 100, so that the deformable conductive member is arranged in the deformation space 101, so that the machine end is electrically connected to the electrodes on the wafer carrier through the first rigid conductive member 210, the deformable conductive member, and the second rigid conductive member 220 in sequence, thereby realizing power supply to the wafer carrier. Since the first rigid conductive member 210 and the second rigid conductive member 220 are connected by the deformable conductive member, when the ambient temperature in the process chamber is at a high temperature, if the second rigid conductive member 220 expands due to heat, the expansion force of the second rigid conductive member 220 will act on the deformable conductive member, thereby reducing the expansion force acting on the wafer carrier through the deformation of the deformable conductive member, thereby preventing damage to the wafer carrier.

[0041] Moreover, when the first rigid conductive part 210 is plugged into the machine end to achieve electrical connection, if the plugging force is large, the deformation of the deformable conductive part can buffer the force acting on the wafer supporting device, thereby preventing the first rigid conductive part 210 from being plugged into the machine end due to the large plugging force causing damage to the wafer supporting device.

[0042] Specifically, the insulating base 100 can be made of polyimide. Of course, the insulating base 100 can also be made of other insulating materials. The present embodiment does not impose any specific restrictions on the material of the insulating base 100. The first rigid conductive member 210 can be electrically connected to the machine end by using a cluster plug connection.

[0043] Please refer to Figures 5 to 8 In an optional embodiment, the deformable conductive member may be a flexible conductive member 230 having redundant bending sections within the deformation space 101. By configuring the deformable conductive member as a flexible conductive member 230, the expansion force acting on the wafer support device can be further reduced, and the impact on the wafer support device caused by the first rigid conductive member 210 and the platform end when plugged into each other can be further alleviated.

[0044] Please refer to Figure 7In an optional embodiment, the first rigid conductive member 210 may be provided with a soldering groove 211, and the flexible conductive member 230 may be soldered into the soldering groove 211, thereby making the connection between the first rigid conductive member 210 and the flexible conductive member 230 more stable. Soldering the flexible conductive member 230 into the soldering groove 211 means that one end of the flexible conductive member 230 is soldered into the soldering groove 211.

[0045] Furthermore, the sidewall of the soldering groove 211 may be provided with a solder outflow hole connected to the soldering groove 211 , thereby facilitating the soldering groove 211 to be filled with solder, thereby facilitating improving the connection stability between the first rigid conductive component 210 and the flexible conductive component 230 .

[0046] Please refer to Figure 1 In order to avoid the problem that the higher temperature is transferred to the machine end due to the high temperature of the wafer carrier and causes damage to the machine end, the electrical connection structure may optionally include an insulating heat insulation layer 400, which can be connected to the insulating base 100, and the insulating heat insulation layer 400 can be located on the side of the insulating base 100 for connection with the wafer carrier.

[0047] The electrical connection structure disclosed in the embodiment of the present application can better prevent excessive heat from the wafer carrier from being transferred to the machine end by providing an insulating heat-insulating layer 400 on the side of the insulating base 100 used for connection with the wafer carrier, thereby protecting the machine end. In addition, the insulating heat-insulating layer 400 can also prevent the insulating base 100 from directly contacting the wafer carrier, thereby protecting the wafer carrier.

[0048] Please refer to Figure 9 In another embodiment, the deformable conductive member can be a conductive spring 240, and the second rigid conductive member 220 can contact the wafer carrier under the action of the elastic force of the conductive spring 240. Specifically, the second rigid conductive member 220 can contact the connection terminal 510 led out of the electrode of the wafer carrier under the action of the elastic force of the conductive spring 240.

[0049] The electrical connection structure disclosed in the embodiment of the present application sets the deformable conductive part as a conductive spring 240, so that the second rigid conductive part 220 can contact the wafer supporting device under the action of the elastic force of the conductive spring 240, thereby effectively reducing the expansion force acting on the wafer supporting device through the elastic deformation of the conductive spring 240, and can alleviate the impact on the wafer supporting device when the first rigid conductive part 210 is plugged into the machine end.

[0050] Please refer to Figure 1In order to alleviate the problem of high temperature being transferred to the machine end due to the excessive temperature of the wafer carrier, the electrical connection structure may optionally include a heat insulating member 300, which may be sleeved on the second rigid conductive member 220. The electrical connection structure disclosed in the embodiment of the present application can alleviate the excessive heat transfer from the wafer carrier to the machine end to a certain extent by providing the heat insulating member 300, and the heat insulating member 300 is sleeved outside the second rigid conductive member 220. Among them, the heat insulating member 300 can be made of stainless steel or an alloy with low thermal conductivity such as Kovar.

[0051] Optionally, the material of the thermal insulation member 300 may be a conductive metal. In the embodiment of the present application, by setting the material of the thermal insulation member 300 to a conductive metal, the conductive performance between the second rigid conductive member 220 and the connection terminal 510 led out of the electrode of the wafer carrier device is improved.

[0052] Since the wafer carrier usually needs to be provided with an electrostatic adsorption electrode, a bias electrode, a heating electrode, etc., it is necessary to provide multiple conductive parts. Since the deformable conductive part can be deformed, in order to prevent the deformable conductive parts between different conductive parts from overlapping and causing a short circuit, the electrical connection structure can optionally include multiple conductive parts, and the first rigid conductive parts 210 of the multiple conductive parts can be spaced apart and passed through one end of the insulating base 100, and the multiple second rigid conductive parts 220 can be spaced apart and passed through the other end of the insulating base 100. Please refer to Figure 4 The insulating base 100 may include a plurality of partitions 121 , and the deformation space 101 may be divided into a plurality of subspaces 121 a by the partitions 121 , and the deformable conductive members of the plurality of conductive parts may be correspondingly disposed in the plurality of subspaces 121 a .

[0053] The electrical connection structure disclosed in the embodiment of the present application is configured with a partition 121 so that the deformation space 101 is divided into a plurality of sub-spaces 121a by the partition 121, and the deformable conductive members of the plurality of conductive parts can be correspondingly arranged in the plurality of sub-spaces 121a, thereby preventing the deformable conductive members of different conductive parts from overlapping and causing a short circuit.

[0054] In one embodiment, the insulating base 100 may be a unitary structure.

[0055] In another embodiment, please refer to Figure 3 The insulating base 100 may include a first base 110, a second base 120, and a third base 130 that are sequentially stacked and connected. The second base 120 has a deformation space 101 and may include a plurality of partitions 121. The first rigid conductive member 210 may be disposed through the first base 110, and the second rigid conductive member 220 may be disposed through the third base 130.

[0056] The electrical connection structure disclosed in the embodiment of the present application facilitates the installation of the first rigid conductive member 210, the second rigid conductive member 220, the deformable conductive member and the partition 121 by configuring the insulating base 100 to be a first base 110, a second base 120 and a third base 130 that are stacked and connected in sequence.

[0057] Specifically, the multiple partitions 121 can be connected at one end, and the multiple partitions 121 can be arranged in a surrounding manner to divide the deformation space 101 into multiple subspaces 121a. The electrical connection structure disclosed in the embodiment of the present application adopts a method of connecting the multiple partitions 121 at one end and surrounding the multiple partitions 121, thereby making the distribution of the multiple subspaces 121a relatively compact.

[0058] Optionally, the first base 110 may be provided with a mounting groove 111 , and the profile of the second base 120 in the direction of overlapping with the first base 110 is adapted to the extended shape of the mounting groove, and the second base 120 may be inserted into the mounting groove 111 .

[0059] The electrical connection structure disclosed in the embodiment of the present application makes the connection between the second base 120 and the first base 110 more stable by inserting the second base 120 into the installation groove 111 of the first base 110 .

[0060] Specifically, the second base portion 120 is bonded to the inner wall of the mounting groove 111 , thereby further improving the connection stability between the second base portion 120 and the first base portion 110 .

[0061] Of course, in another embodiment, the first base 110 may not be provided with the installation groove 111, and the second base 120 and the first base 110 may be directly connected by bonding, snapping, etc. The embodiment of the present application does not impose any specific restrictions on the connection form between the second base 120 and the first base 110.

[0062] In an optional embodiment, the first base portion 110 may further include a first limiting portion 113. The first base portion 110 may define a plurality of first through-holes 112. The plurality of first rigid conductive members 210 may be correspondingly disposed within the plurality of first through-holes 112. The first limiting portion 113 may be disposed at the first openings of the first through-holes 112 to engage with the first ends of the first rigid conductive members 210. The plurality of first through-holes 112 may correspond one-to-one with the plurality of sub-spaces 121a, and the second openings of the first through-holes 112 may communicate with the corresponding sub-spaces 121a.

[0063] The electrical connection structure disclosed in the embodiment of the present application is provided with a first limiting portion 113, so that the first limiting portion 113 can be provided at the first opening of the first through hole 112, so that the first limiting portion 113 can be in limiting contact with the first end of the first rigid conductive component 210, thereby facilitating the stability of the installation of the first rigid conductive component 210.

[0064] Furthermore, the second base 120 may further include a mounting portion 122. One end of the plurality of partitions 121 may be circumferentially connected to the mounting portion 122. The mounting portion 122 may partially cover the second opening of the first through hole to provide limited contact with the second ends of the plurality of first rigid conductive members 210. Specifically, the mounting portion 122 may be cylindrical. Of course, the mounting portion 122 may also have other shapes. The present embodiment does not impose any specific limitation on the shape of the mounting portion 122.

[0065] The electrical connection structure disclosed in the embodiment of the present application is configured such that the second base 120 includes a mounting portion 122, so that the mounting portion 122 can provide a mounting basis for the connection of multiple partitions 121, and the mounting portion 122 can block a portion of the second opening of the first through hole to limit contact with the second ends of the multiple first rigid conductive parts 210, so that the mounting portion 122 serves two purposes, and cooperates with the first limiting portion 113 to limit the first rigid conductive part 210 within the first through hole 112, thereby facilitating the stability of the installation of the first rigid conductive part 210.

[0066] To achieve the connection between the first base 110, the second base 120 and the third base 130, please refer to Figure 4 Optionally, the second base 120 may further include a connecting portion 123. The connecting portion 123 may be provided on the end of at least some of the plurality of partitions 121 facing away from the mounting portion 122. The connecting portion 123 may have a connecting through-hole. The electrical connection structure may further include a threaded connector that may sequentially pass through the first base 110 and the connecting through-hole to connect to the third base 130, thereby connecting the first base 110, the second base 120, and the third base 130.

[0067] The electrical connection structure disclosed in the embodiment of the present application is configured by providing a connecting portion 123 on an end of at least some of the plurality of partitions 121 that is away from the mounting portion 122, and providing a connecting through-hole in the connecting portion 123, so that a threaded connector can sequentially pass through the first base 110 and the connecting through-hole to connect with the third base 130, thereby connecting the first base 110, the second base 120, and the third base 130. By providing the connecting portion 123 at the end of the partition 121 that is away from the mounting portion 122, the connecting portion 123 is positioned away from the central area of ​​the second base 120, thereby facilitating the connection stability of the first base 110, the second base 120, and the third base 130 when multiple connecting portions 123 are coordinated.

[0068] In an optional embodiment, the third base 130 may be provided with a plurality of second through holes 131, the plurality of second through holes 131 may correspond one-to-one to the plurality of subspaces 121a, the first orifice of the second through hole 131 may be connected to the corresponding subspace 121a, the second rigid conductive member 220 may be a bolt, the head of the bolt may be in limited contact with the hole wall of the first orifice of the second through hole, the screw of the bolt may be passed through the second through hole 131, and the screw may be used for threaded connection with the connection terminal 510 of the wafer carrier device.

[0069] The electrical connection structure disclosed in the embodiment of the present application is provided with a plurality of second through holes 131 in the third base portion 130. The second rigid conductive member 220 is configured as a bolt, so that the head of the bolt is in limited contact with the wall of the first opening of the second through hole 131. The screw of the bolt is inserted into the second through hole 131 and is threadedly connected to the connection terminal 510 of the wafer carrier device. This makes the connection structure between the second rigid conductive member 220 and the connection terminal 510 of the wafer carrier device relatively simple and the connection is more stable. Moreover, the connection terminal 510 can extend into the second through hole 131 and engage with the screw thread of the bolt, so that the third base portion 130 can wrap around the bolt and the connection terminal 510, thereby preventing the occurrence of discharge and sparking.

[0070] Furthermore, a spring washer 710 or a flat washer 720 is connected between the head and the hole wall of the first hole of the second through hole, or both the spring washer 710 and the flat washer 720 are connected. The spring washer or the flat washer can be made of stainless steel.

[0071] The electrical connection structure disclosed in the embodiment of the present application is beneficial to increasing the contact area between the deformable conductive part and the bolt by arranging a spring washer 710 or a flat washer 720 or arranging both a spring washer 710 and a flat washer 720 between the head and the hole wall of the first hole of the second through hole. At the same time, when the screw is threadedly connected to the connecting terminal 510 extending from the second hole of the second through hole 131 into the second through hole 131, the pre-tightening force of the bolt can be increased, so that the connection between the bolt and the connecting terminal 510 is more stable, and the spring washer 710 and the flat washer 720 can also provide a certain buffering effect for the rigid connection between the screw and the connecting terminal 510.

[0072] To facilitate the operation of the bolt, optionally, a avoidance hole may be opened at a position of the first base 110 opposite to the head, and the head may be exposed through the subspace 121 a and the avoidance hole, thereby facilitating the operation of the bolt.

[0073] Optionally, the bolt may be silver-plated on the surface, and the connection terminal 510 may be silver-plated or gold-plated on the surface, thereby improving the electrical conductivity of the bolt and the connection terminal 510 .

[0074] The present application also discloses a lower electrode assembly, which includes a wafer carrier and the electrical connection structure disclosed in the above embodiments. The wafer carrier includes a base 600 and a functional layer 500 superimposed and connected to the base 600. The functional layer 500 is provided with electrodes, and the electrodes are connected to connection terminals 510. The base 600 has a storage space, and at least a portion of the electrical connection structure is located in the storage space. The second rigid conductive member 220 is electrically connected to the connection terminal 510.

[0075] The lower electrode assembly disclosed in the embodiment of the present application is provided with the electrical connection structure disclosed in the above embodiment, so that when the second rigid conductive member 220 is electrically connected to the connection terminal 510, it can be avoided that when the second rigid conductive member 220 expands due to heat, the expansion force of the second rigid conductive member 220 acts on the deformable conductive member instead of acting on the functional layer 500, thereby reducing the expansion force acting on the functional layer 500 through the deformation of the deformable conductive member, thereby preventing damage to the functional layer 500.

[0076] Specifically, the wafer carrying device may include an electrostatic chuck, which may include a base 600 and a functional layer 500 , wherein the electrodes provided in the functional layer 500 include at least one of an electrostatic adsorption electrode, a bias electrode, and a heating electrode.

[0077] It should be noted that the electrostatic adsorption electrode can be used to adsorb the wafer on the wafer carrier, the heating electrode can be used to heat the wafer, and the bias electrode can be used to provide bias for the wafer, thereby achieving the fixation, heating and biasing of the wafer.

[0078] The present application also discloses a process chamber, which includes a chamber and a lower electrode assembly disposed in the chamber. The lower electrode assembly is the lower electrode assembly disclosed in the above embodiment.

[0079] The process chamber disclosed in the embodiment of the present application is provided with the lower electrode assembly disclosed in the above embodiment, so that when the second rigid conductive part 220 is electrically connected to the connection terminal 510, it can be avoided that when the second rigid conductive part 220 expands due to heat, the expansion force of the second rigid conductive part 220 acts on the deformable conductive part instead of acting on the functional layer 500, thereby reducing the expansion force acting on the functional layer 500 through the deformation of the deformable conductive part, thereby preventing damage to the functional layer 500.

[0080] It should be noted that the functional layer 500 in this article can be a ceramic material. Of course, the functional layer 500 can also be other materials. The embodiment of the present application does not impose any specific restrictions on the material of the functional layer 500.

[0081] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0082] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are protected by the present invention.

Claims

1. An electrical connection structure for a wafer carrier, characterized in that: The electrical connection structure comprises an insulating base (100) and a conductive portion, wherein: The conductive part is used to supply power to the wafer carrying device, and the conductive part comprises a first rigid conductive part (210), a deformable conductive part, and a second rigid conductive part (220) connected in sequence, the first rigid conductive part (210) and the second rigid conductive part (220) are arranged through the insulating base (100), the insulating base (100) has a deformation space (101), and the deformable conductive part is arranged in the deformation space (101).

2. The electrical connection structure according to claim 1, wherein: The deformable conductive member is a flexible conductive member (230), and the flexible conductive member (230) has a redundant bending section in the deformation space (101).

3. The electrical connection structure according to claim 1, wherein: The first rigid conductive part (210) is provided with a welding groove (211), and the flexible conductive part (230) is welded in the welding groove (211) by solder.

4. The electrical connection structure according to claim 3, characterized in that: A solder outflow hole communicating with the soldering groove (211) is provided on the side wall of the soldering groove (211).

5. The electrical connection structure according to claim 1, wherein: The electrical connection structure further comprises an insulating and heat-insulating layer (400), which is connected to the insulating base (100) and is located on a side of the insulating base (100) used for connection with the wafer carrying device.

6. The electrical connection structure according to claim 1, wherein: The deformable conductive part is a conductive spring (240), and the second rigid conductive part (220) contacts the wafer carrying device under the action of the elastic force of the conductive spring (240).

7. The electrical connection structure according to claim 1, wherein: The electrical connection structure further comprises a heat insulating member (300), wherein the heat insulating member (300) is sleeved outside the second rigid conductive member (220).

8. The electrical connection structure according to any one of claims 1 to 7, characterized in that: The electrical connection structure comprises a plurality of conductive parts, wherein the first rigid conductive members (210) of the plurality of conductive parts are arranged at intervals through one end of the insulating base (100), and the second rigid conductive members (220) are arranged at intervals through the other end of the insulating base (100). The insulating base (100) comprises a plurality of partitions (121), and the deformation space (101) is divided into a plurality of subspaces (121a) by the partitions (121). The deformable conductive members of the plurality of conductive parts are correspondingly arranged in the plurality of subspaces (121a).

9. The electrical connection structure according to claim 8, characterized in that: The insulating base (100) includes a first base (110), a second base (120) and a third base (130) which are stacked and connected in sequence, the second base (120) includes a plurality of partitions (121), the first rigid conductive member (210) is passed through the first base (110), and the second rigid conductive member (220) is passed through the third base (130).

10. The electrical connection structure according to claim 9, characterized in that: One ends of the plurality of partitions (121) are connected, and the plurality of partitions (121) are arranged around to separate the deformation space (101) into the plurality of subspaces (121a).

11. The electrical connection structure according to claim 9, wherein: The first base (110) is provided with a mounting groove (111), the profile of the second base (120) in the direction of overlapping with the first base (110) is adapted to the extended shape of the mounting groove, and the second base (120) is inserted into the mounting groove (111).

12. The electrical connection structure according to claim 11, wherein: The second base (120) is bonded to the inner wall of the installation groove (111).

13. The electrical connection structure according to claim 9, wherein: The first base (110) further includes a first limiting portion (113), the first base (110) is provided with a plurality of first through holes (112), a plurality of the first rigid conductive members (210) are correspondingly passed through the plurality of the first through holes (112), the first limiting portion (113) is provided at the first opening of the first through hole (112) to be in limiting contact with the first end of the first rigid conductive member (210), the plurality of the first through holes (112) correspond one-to-one to the plurality of the subspaces (121a), and the second opening of the first through hole (112) is connected to the corresponding subspace (121a).

14. The electrical connection structure according to claim 13, wherein: The second base (120) further includes a mounting portion (122), one end of each of the plurality of partitions (121) being circumferentially connected to the mounting portion (122), and the mounting portion (122) shields a portion of the second opening of the first through hole to be in positionally contacted with the second ends of the plurality of first rigid conductive members (210).

15. The electrical connection structure according to claim 14, characterized in that: The second base (120) further includes a connecting portion (123), and at least some of the partitions (121) among the plurality of partitions (121) are provided with the connecting portion (123) at one end facing away from the mounting portion (122), and the connecting portion (123) is provided with a connecting through hole; The electrical connection structure further includes a threaded connector, which sequentially passes through the first base (110), the connection through hole, and is connected to the third base (130), so as to connect the first base (110), the second base (120), and the third base (130).

16. The electrical connection structure according to claim 9, characterized in that: The third base (130) is provided with a plurality of second through holes (131), and the plurality of second through holes (131) correspond to the plurality of subspaces (121a). The first openings of the second through holes (131) are connected to the corresponding subspaces (121a). The second rigid conductive member (220) is a bolt, and the head of the bolt is in limited contact with the hole wall of the first opening of the second through hole. The screw of the bolt is passed through the second through hole (131), and the screw is used for threaded connection with the connection terminal (510) of the wafer carrier device.

17. The electrical connection structure according to claim 16, wherein: A spring washer (710) and / or a flat washer (720) is connected between the head and the hole wall of the first hole opening of the second through hole.

18. The electrical connection structure according to claim 16, wherein: A relief hole is provided at a position of the first base (110) opposite to the head, and the head is exposed through the subspace (121a) and the relief hole.

19. A lower electrode assembly, characterized in that: include: A wafer carrier device and an electrical connection structure according to any one of claims 1 to 18; The wafer carrying device comprises a base (600) and a functional layer (500) superimposed and connected to the base (600); an electrode is provided in the functional layer (500); a connecting terminal (510) is led out of the electrode; the base (600) has a receiving space; at least a portion of the electrical connection structure is located in the receiving space; and the second rigid conductive member (220) is electrically connected to the connecting terminal (510).

20. The lower electrode assembly according to claim 19, wherein: The wafer carrying device includes an electrostatic chuck, which includes the base (600) and the functional layer (500), and the electrode arranged in the functional layer (500) includes at least one of an electrostatic adsorption electrode, a bias electrode, and a heating electrode.

21. A process chamber, characterized in that: It comprises a cavity and a lower electrode assembly arranged in the cavity, and the lower electrode assembly is the lower electrode assembly according to claim 19 or 20.

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