SiC crystal growth device and thermal field horizontal state adjusting method thereof
By adopting the design of multiple symmetrical temperature measurement channels and adjustment platforms in the SiC crystal growth device, the problem of thermal field instability is solved, real-time monitoring and adjustment of the thermal field is achieved, and the stability and quality of crystal growth are improved.
Patent Information
- Application Number
- CN202510945872.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-09
- Publication Date
- 2025-09-09
AI Technical Summary
Existing SiC crystal growth devices are sensitive to fluctuations in the thermal field, temperature field, and airflow field, resulting in unstable growth interfaces, temperature control limitations, and thermal field instability, which affect crystal quality.
A SiC crystal growth device is designed, which adopts multiple symmetrically arranged temperature measurement channels and an adjustment platform to monitor the thermal field temperature in real time. The horizontal state of the thermal field is kept stable by adjusting the platform height and crucible position.
It achieves precise monitoring and real-time adjustment of the thermal field temperature, reduces crystal defects, and improves the growth quality and uniformity of SiC crystals.
Smart Images
Figure CN120608320A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of SiC crystal growth equipment, and in particular to a SiC crystal growth device and a method for regulating the horizontal state of a thermal field thereof. Background Art
[0002] During the physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals, stable mass transport and phase transitions are crucial for obtaining high-quality crystals. However, existing thermal field systems are extremely sensitive to fluctuations in the thermal field, temperature field, and gas flow field: 1. Uncontrollable disturbances: System variable disturbances (such as thermal field tilt and shifts in the distribution of gas phase components SimCn) can destabilize the growth interface and lead to crystal defects. 2. Temperature control limitations: Existing technologies rely on temperature measurement at the top of the graphite crucible and PID temperature control. However, the actual growth interface temperature can still drift significantly with crystal growth, furnace changes, and thermal field evolution (such as graphite deformation and vapor phase corrosion). 3. Thermal field instability: High-temperature deformation of the graphite felt, vapor phase corrosion, and the weight of the large thermal field (>30 kg) can cause thermal field tilt. Therefore, it is urgent to design a SiC crystal growth device that can adjust the thermal field level in a timely manner to meet the industrialization needs of large-scale SiC crystals. Summary of the Invention
[0003] The present invention aims to solve at least one of the technical problems in the related art to a certain extent. To this end, the present invention provides a SiC crystal growth device and a method for adjusting the thermal field level, which can monitor the thermal field temperature and adjust the thermal field level.
[0004] The first aspect of the present application provides a SiC crystal growth device, which includes: a quartz tube, including a quartz tube body and a quartz tube top cover provided on the quartz tube body, the quartz tube top cover being provided with a plurality of first temperature measurement holes; a heat preservation assembly, disposed inside the quartz tube and defining a closed heat preservation accommodation space, the top of the heat preservation assembly being provided with a plurality of second temperature measurement holes, each second temperature measurement hole being arranged opposite to one of the first temperature measurement holes to form a temperature measurement channel; a crucible, disposed in the heat preservation accommodation space; and a temperature measuring gun, disposed on the quartz tube top cover, for measuring the temperature of the SiC crystal growth thermal field through the temperature measurement channel. Thus, the temperature of different areas of the thermal field can be accurately measured, and problems with the thermal field can be discovered in a timely manner. The operation is simple, and the process flow is simplified.
[0005] According to an embodiment of the present application, the plurality of temperature measurement channels are symmetrically arranged about the central axis of the crucible. Thus, multiple groups of temperature measurement devices simultaneously monitor the temperature of symmetrical areas to ensure a stable and symmetrical thermal field.
[0006] According to an embodiment of the present application, the ratio of the distance between the central axis of the temperature measurement channel and the central axis of the crucible to the radius of the crucible is 2 / 3. Thus, the appropriate location of the temperature measurement channel can avoid extreme interference from the central high-temperature area while effectively capturing temperature fluctuations in the edge areas, ensuring that the temperature measurement data more representatively reflects the horizontality and symmetry of the thermal field.
[0007] According to an embodiment of the present application, the temperature measurement channels meet at least one of the following conditions: the number of temperature measurement channels is 2 to 8; the aperture of the first temperature measurement through hole is 10 mm to 20 mm, preferably 10 nm; and the aperture of the second temperature measurement through hole is 10 mm to 20 mm, preferably 10 nm. Therefore, an appropriate number of temperature measurement channels can more comprehensively obtain temperature distribution information of the thermal field; and the aperture of the temperature measurement through hole of appropriate size can maintain the stability of the thermal field.
[0008] According to an embodiment of the present application, a temperature measuring gun is correspondingly provided at the top of each temperature measuring channel, thereby enabling the temperature measuring gun to monitor and measure the temperature during the crystal growth process in real time, and to obtain the temperature distribution and changes of the thermal field.
[0009] According to an embodiment of the present application, multiple first temperature measurement holes are interconnected to form a first annular temperature measurement opening; multiple second temperature measurement holes are interconnected to form a second annular temperature measurement opening; and the second annular temperature measurement opening and the first annular temperature measurement opening are arranged opposite each other to form an annular temperature measurement channel. This allows for precise temperature measurement of different thermal field regions, and the temperature measurement method is flexible to meet different measurement needs.
[0010] According to an embodiment of the present application, the SiC crystal growth apparatus further includes a connector disposed on the top cover of the quartz tube, and the temperature measuring gun is movably connected to the connector. Thus, the movable function enables the temperature measuring gun to monitor temperature changes at different locations of the thermal field in real time.
[0011] According to an embodiment of the present application, the connecting member includes: a bracket mounted on the top cover of the quartz tube; a driving member mounted on the bracket; a movable connecting rod mounted on the driving member and movable by the driving member; and the temperature measuring gun connected to the movable connecting rod. This improves temperature measurement flexibility and enhances temperature measurement accuracy.
[0012] According to an embodiment of the present application, multiple adjustment platforms are further included, and the multiple adjustment platforms are symmetrically arranged about the central axis of the crucible. Each of the adjustment platforms includes: a contact plate, which is arranged below the insulation component and contacts the insulation component; a support body, which is arranged below the contact plate and connected to the contact plate; and a drive assembly, which is connected to the support body and is used to drive the support body and the contact plate to rise and fall synchronously. In this way, the relative position of the coil and the thermal field can be changed by adjusting the height of the platform, thereby adjusting the temperature distribution and ensuring a stable and symmetrical thermal field.
[0013] The second aspect of this application proposes a method for adjusting the horizontal state of the thermal field of a SiC crystal growth apparatus. The method comprises: growing SiC crystals using the SiC crystal growth apparatus; during the SiC crystal growth process, monitoring the temperature of the SiC crystal growth thermal field in real time using a temperature measuring gun; and adjusting the position of the heat preservation assembly and crucible by adjusting the carrier when the temperature difference between any two temperature measurement channels exceeds 5°C. Thus, multiple sets of temperature measuring devices simultaneously monitor the temperature of symmetrical areas, quickly detecting thermal field asymmetry. These asymmetries can be promptly corrected by adjusting the carrier height to ensure a stable and symmetrical thermal field, thereby facilitating uniform crystal growth, reducing crystal defects caused by temperature differences, and improving crystal quality.
[0014] According to an embodiment of the present application, adjusting the position of the heat preservation assembly and crucible by adjusting the carrier includes lowering the position of the heat preservation assembly and crucible on the side corresponding to the higher temperature temperature measurement channel. This allows for real-time adjustment of the crystal growth thermal field level based on the temperature measurement results.
[0015] According to an embodiment of the present application, the position of the heat preservation component and the crucible on the side corresponding to the lower temperature temperature measurement channel is raised, thereby achieving real-time adjustment of the crystal growth thermal field level according to the temperature measurement results.
[0016] According to an embodiment of the present application, real-time monitoring of the temperature of the SiC crystal growth thermal field using a temperature measuring gun includes moving the temperature measuring gun at a constant speed along a predetermined trajectory while simultaneously measuring the temperature. This allows for a complete scan of all radial positions of the symmetrical thermal field, avoiding the blind spots of static single-point temperature measurement.
[0017] According to an embodiment of the present application, the temperature measuring gun is moved along a predetermined trajectory and stays above each temperature measuring channel for a predetermined time to perform temperature measurement, thereby eliminating measurement errors caused by movement and improving the temperature measurement accuracy of a single temperature measuring point.
[0018] According to an embodiment of the present application, the temperature measuring gun moves at a speed of 2 mm / s-5 mm / s. This speed range can ensure that the temperature measuring gun remains stable during movement, reduce temperature data fluctuations, and make the temperature measurement results more accurate and reliable. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a structural schematic diagram of a SiC crystal growth device according to an embodiment of the present application.
[0020] Figure 2 It is a structural schematic diagram of an annular temperature measurement channel of a SiC crystal growth device according to one embodiment of the present application.
[0021] Figure 3 It is a structural schematic diagram of a SiC crystal growth device according to an embodiment of the present application.
[0022] Figure 4 It is a structural schematic diagram of a SiC crystal growth device according to an embodiment of the present application.
[0023] Figure markings: 10-quartz tube; 11-quartz tube body; 12-quartz tube top cover; 20-first temperature measuring hole; A-temperature measuring channel A; B-temperature measuring channel B; C-temperature measuring channel C; D-temperature measuring channel D; 30-second temperature measuring hole; 40-insulation component; 50-crucible; 60-temperature measuring gun; 70-connecting part; 71-bracket; 72-driving part; 73-moving connecting rod; 80-carrier; 81-contact plate platform; 82-support body; 83-driving component; 90-coil; 100-annular temperature measuring channel; D1-radial dimension of the annular temperature measuring opening; A1-carrier A1; B1-carrier B1; C1-carrier C1; D1-carrier D1. DETAILED DESCRIPTION
[0024] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to be used to explain the present application, but should not be understood as limiting the present application.
[0025] It is understandable that during the growth of SiC crystals, power control or constant temperature is used to prevent the thermal field temperature from changing significantly during the growth process. In fact, as the SiC crystal grows or the thermal field itself and between different furnaces, the thermal field stability will change significantly, the temperature of the growth interface will change, and the thermal field may tilt, resulting in the SiC crystal morphology tilting or excessive local fluctuations. In order to maintain the stability of the crystal form, it is necessary to further adjust the horizontal state of the thermal field of the SiC crystal during the growth process. Based on this, the present application is proposed.
[0026] In a first aspect of the present application, a SiC crystal growth device is provided, referring to Figure 1(The left figure is a schematic diagram of the structure of the SiC crystal growth device, and the right figure is a schematic diagram of the structure of multiple temperature measuring holes). The growth device includes: a quartz tube 10, including a quartz tube body 11 and a quartz tube top cover 12 covering the quartz tube body, the quartz tube top cover 12 is provided with multiple first temperature measuring holes 20; a heat preservation component 40, which is arranged inside the quartz tube and defines a closed heat preservation accommodating space, and the top of the heat preservation component 40 is provided with multiple second temperature measuring holes 30, each second temperature measuring hole 30 is arranged opposite to one of the first temperature measuring holes 20 to form a temperature measuring channel; a crucible 50, which is arranged in the heat preservation accommodating space; a temperature measuring gun 60, which is arranged on the quartz tube top cover 12 and is used to measure the temperature of the SiC crystal growth thermal field through the temperature measuring channel. In this way, the temperature of different thermal field areas can be accurately measured, and problems with the thermal field can be discovered in a timely manner. The operation is simple and the process flow is simplified.
[0027] According to the embodiments of this application, referring to Figure 1 In the right image, multiple temperature measurement channels are symmetrically arranged about the central axis of the crucible. This allows multiple temperature measurement devices to simultaneously monitor the temperature of symmetrical areas, quickly detecting thermal field asymmetry.
[0028] According to an embodiment of the present application, the ratio of the distance between the central axis of the temperature measurement channel and the central axis of the crucible to the radius of the crucible is 2 / 3. Thus, the proper location of the temperature measurement channel can avoid extreme interference in the central high-temperature area while effectively capturing temperature fluctuations in the edge areas, ensuring that the temperature measurement data more representatively reflects the horizontality and symmetry of the thermal field.
[0029] According to an embodiment of the present application, the number of temperature measurement channels is 2 to 8. Specifically, the number of temperature measurement channels can be 2, 3, 4, 5, 6, 7, or 8. As an example of the present application, there are 4 temperature measurement channels. Thus, 2 to 8 temperature measurement channels can perform multi-point measurements on different areas of the thermal field. Compared with a single temperature measurement channel, the temperature distribution information of the thermal field can be obtained more comprehensively, and it can be accurately judged whether there are problems such as temperature deviation in the thermal field, providing a more sufficient basis for adjusting the uniformity of the thermal field. Too few temperature measurement channels will affect the accuracy of thermal field temperature monitoring; too many temperature measurement channels will increase the heat dissipation of the thermal field and affect crystal growth.
[0030] According to an embodiment of the present application, the temperature measuring through hole satisfies at least one of the following conditions: the aperture of the first temperature measuring through hole is 10mm to 20mm, specifically, the aperture of the first temperature measuring through hole can be 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm. As an example, the aperture of the first temperature measuring through hole can be 10mm. The aperture of the second temperature measuring through hole is 10mm to 20mm, specifically, the aperture of the second temperature measuring through hole can be 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm, 20mm. As an example, the aperture of the second temperature measuring through hole can be 10mm. Thus, a suitable aperture can maintain the stability of the thermal field. If the aperture is too small, it may limit the movement or installation of the temperature measuring device, thereby affecting the temperature measurement accuracy and temperature measurement range; if the aperture is too large, heat is more easily dissipated through the temperature measuring hole, which may cause a local drop in the thermal field temperature around the temperature measuring hole.
[0031] According to an embodiment of the present application, a temperature measuring gun 60 is correspondingly provided at the top of each temperature measuring channel. As a specific example, the temperature measuring gun uses an infrared temperature measuring gun, which does not need to directly contact the high-temperature object and can remotely measure the temperature of various points in the crystal growth device, avoiding interference with the thermal field and crystal growth. It also has a fast response speed and can quickly capture small changes and abnormal fluctuations in the thermal field temperature.
[0032] According to the embodiments of this application, referring to Figure 2 Multiple first temperature measurement holes 20 are interconnected to form a first annular temperature measurement opening; multiple second temperature measurement holes 30 are interconnected to form a second annular temperature measurement opening; the second annular temperature measurement opening and the first annular temperature measurement opening are arranged opposite each other, forming an annular temperature measurement channel 100. Thus, on the one hand, the temperature measuring gun can accurately measure the temperature of different areas by moving along a circular trajectory, providing detailed data for determining the levelness of the thermal field; on the other hand, the temperature measurement method is flexible, capable of both continuous circular motion for real-time monitoring and fixed-point movement to obtain stable temperature values, adapting to different measurement needs.
[0033] According to the embodiments of this application, referring to Figure 3 The crystal growth apparatus further includes a connector 70 disposed on the quartz tube top cover 12, and the temperature measuring gun 60 is movably connected to the connector 70. Thus, the movable function enables the temperature measuring gun to cover a wider area, not just a fixed point, and can track temperature changes at different locations of the thermal field in real time, thereby facilitating the acquisition of more comprehensive temperature distribution data.
[0034] According to the embodiments of this application, referring to Figure 3The connecting member 70 includes a bracket 71 mounted on the quartz tube top cover 12; a driving member 72 mounted on the bracket 71; a movable connecting rod 73 mounted on the driving member 72 and movable by the driving member 72; and the temperature measuring gun 60 is connected to the movable connecting rod 73. This improves temperature measurement flexibility and accuracy, enables automatic temperature measurement under the action of the driving member, and improves efficiency.
[0035] According to the embodiments of this application, referring to Figure 4 The crystal growth apparatus further includes a plurality of adjustment platforms 80 symmetrically arranged about the central axis of the crucible 50 . Each adjustment platform 80 includes a contact plate 81 disposed below the heat-insulating assembly 40 and in contact with the heat-insulating assembly 40 ; a support body 82 disposed below and connected to the contact plate 81 ; and a drive assembly 83 connected to the support body 82 for driving the support body 82 and the contact plate 81 to rise and fall synchronously. Thus, the position of the crucible can be changed by adjusting the height of the platform, thereby changing the relative position of the coil and the thermal field, thereby adjusting the temperature distribution and ensuring a stable and symmetrical thermal field.
[0036] In some embodiments, referring to Figure 4 (The left figure is a schematic diagram of the structure of the SiC crystal growth device, the upper right figure is a schematic diagram of the structure of the four temperature measurement channels, and the lower right figure is a schematic diagram of the structure of the four carriers). The growth device includes four first temperature measurement holes 20 symmetrically arranged about the central axis of the crucible; four temperature measuring guns 60 arranged on the top of the temperature measurement channels; and four second temperature measurement holes 30 arranged on the top of the insulation component 40 and facing the first temperature measurement holes. The four first temperature measurement holes 20 and the four second temperature measurement holes 30 constitute four temperature measurement channels. Figure 4 As shown in the right figure, they are temperature measurement channel A, temperature measurement channel B, temperature measurement channel C, and temperature measurement channel D; 4 adjustment platforms 80 are set below the insulation component 40 corresponding to each temperature measurement area, namely platform A1, platform B1, platform C1, and platform D1, and each adjustment platform also includes a contact plate 81, a support body 82, and a driving component 83.
[0037] In some embodiments, the contact method between the contact plate and the heat preservation component is not particularly limited, as long as the contact method enables the contact plate to support the heat preservation component.
[0038] The second aspect of this application proposes a method for adjusting the horizontal state of the thermal field of a SiC crystal growth apparatus. The method comprises: growing SiC crystals using the aforementioned SiC crystal growth apparatus; during the SiC crystal growth process, monitoring the temperature of the SiC crystal growth thermal field in real time using a temperature measuring gun; and adjusting the position of the heat preservation assembly and crucible by adjusting the carrier when the temperature difference between any two temperature measurement channels exceeds 5°C. Thus, multiple sets of temperature measuring devices simultaneously monitor the temperature of symmetrical regions, enabling rapid detection of thermal field asymmetry. This can be promptly corrected by adjusting the carrier height to ensure a stable and symmetrical thermal field, thereby facilitating uniform crystal growth, reducing crystal defects caused by temperature differences, and improving crystal quality.
[0039] According to an embodiment of the present application, adjusting the position of the insulation assembly and crucible by adjusting the carrier includes lowering the position of the insulation assembly and crucible on the side corresponding to the higher temperature temperature measurement channel. Thus, by adjusting the carrier to change the relative position of the insulation assembly and crucible to the coil, the side of the insulation assembly corresponding to the higher temperature area in the temperature measurement channel is lowered. This operation can increase the heat dissipation intensity in the high-temperature area, reduce the temperature difference between this area and the low-temperature side, and homogenize the radial temperature gradient of the thermal field, thereby avoiding the tilt of the crystal growth surface caused by the uneven thermal field, and at the same time reduce the dislocation defect density caused by thermoelastic stress.
[0040] According to an embodiment of the present application, the position of the insulation component and the crucible on the side corresponding to the temperature measuring channel with a lower temperature is raised. Thus, the carrier is adjusted to change the relative position of the insulation component, the crucible and the coil, and the side of the insulation component corresponding to the higher temperature area in the temperature measuring channel is lowered. This operation can increase the heat dissipation intensity of the high-temperature zone, reduce the temperature difference between this area and the low-temperature side, and homogenize the radial temperature gradient of the thermal field, thereby avoiding the tilt of the crystal growth surface caused by the uneven thermal field, and at the same time reducing the dislocation defect density caused by thermoelastic stress, ultimately ensuring the uniformity and stability of crystal growth and improving the overall quality of the crystal.
[0041] In some embodiments, referring to Figure 3 , multiple platforms with corresponding areas can be set under the insulation components corresponding to multiple temperature measurement channels. When the temperature difference between any two temperature measurement channels exceeds 5°C, the height of the platform area corresponding to the temperature measurement area with lower temperature can be raised to make the thermal field reach a horizontal state.
[0042] In some embodiments, real-time monitoring of the temperature of the SiC crystal growth thermal field using a temperature measuring gun includes moving the temperature measuring gun at a constant speed along a predetermined trajectory while simultaneously measuring the temperature. This allows for a complete scan of all radial positions of the symmetrical thermal field, avoiding the blind spots associated with static single-point temperature measurement. In other embodiments, the temperature measuring gun is moved along a predetermined trajectory and remains above each temperature measurement channel for a predetermined period of time to measure the temperature. This eliminates measurement errors caused by movement and improves the temperature measurement accuracy of a single temperature measurement point.
[0043] According to an embodiment of the present application, the temperature measuring gun moves at a speed of 2 mm / s-5 mm / s. This speed range ensures that the temperature measuring gun remains stable during movement, reduces temperature data fluctuations caused by excessive movement speed, and makes the temperature measurement results more accurate and reliable.
[0044] The present application is described below with reference to specific embodiments:
[0045] use Figure 4 The SiC crystal growth apparatus shown in the figure was used to grow SiC crystals. Four temperature measurement devices were installed: temperature measurement channel A, temperature measurement channel B, temperature measurement channel C, and temperature measurement channel D. A temperature gun was installed above each temperature measurement channel, corresponding to temperature measurement points A, B, C, and D. Four platforms were installed below the insulation assembly, corresponding to each temperature measurement channel area: platform A1, platform B1, platform C1, and platform D1. The crystal growth apparatus was turned on. When the powder began to sublimate, the growth program was initiated. Simultaneously, infrared temperature guns were activated in each of the four temperature measurement areas to measure the thermal field. The target temperature for crystal growth was set to 2100°C (actual temperature measured was 2150°C). Three hours after the growth program was started, the temperature was raised to within the range of 1600°C-1800°C, and the temperature changes at the measurement points were observed. If the temperature difference between any two measurement points exceeded 5°C (e.g., measurement points A and B), the platform height was adjusted accordingly. After adjustment, let the temperature stand for 10 minutes and re-evaluate the temperature difference. If the temperature difference between any two measuring points is ≤5°C, the thermal field level is determined to be satisfactory. This thermal field level adjustment process is only performed during the initial stages of SiC crystal growth (i.e., within the temperature range of 1600°C-1800°C). SiC crystal growth can begin after the temperature stabilizes.
[0046] Example 1
[0047] 1) High vacuum acquisition for 2 hours; process leak detection for 40 minutes;
[0048] 2) The pressure was increased to 100,000 Pa (Ar flow rate 3,000 sccm) within 30 minutes, and the power was 0;
[0049] 3) The pressure was maintained at 100,000 Pa (Ar flow rate was reduced to 100 sccm) for 10 minutes, and the power was 0;
[0050] 4) The pressure dropped to 10,000 Pa (Ar flow rate dropped to 100 sccm) within 30 minutes, and the power was 2 kW;
[0051] 5) The pressure was maintained at 10,000 Pa (Ar flow rate was maintained at 100 sccm) and the power was 15.5 kW for 3 h;
[0052] 6) Within 13 hours, the pressure dropped to 400 Pa (Ar flow rate maintained at 100 sccm, nitrogen flow rate 20 sccm), and the power was 15.5 kW. At this time, the infrared temperature gun began to display the temperature reading. After 3 hours, the temperatures measured at temperature measuring points A, B, C, and D were 1680°C, 1700°C, 1682°C, and 1685°C, respectively. At this time, the horizontality of the thermal field began to be adjusted.
[0053] 7) Move platforms A1 and C1 upward at a speed of 5mm / h, while observing the temperatures at temperature measuring points B and D. After approximately 0.4h of movement, when platforms A1 and C1 have moved up 2mm, the temperatures measured at temperature measuring points A, B, C, and D are 1730°C, 1735°C, 1732°C, and 1734°C, respectively. Stop moving the platforms. 10 minutes later, the temperatures measured at temperature measuring points A, B, C, and D are 1741°C, 1745°C, 1742°C, and 1745°C, respectively. At this point, it is determined that the thermal field horizontal adjustment is complete.
[0054] 8) The pressure dropped to 200 Pa within 5 h (Ar flow rate maintained at 100 sccm, nitrogen flow rate 23 sccm), and the power was controlled at 15.5 kW;
[0055] 9) The pressure was maintained at 200 Pa for 10 minutes (Ar flow rate was maintained at 100 sccm, nitrogen flow rate was maintained at 23 sccm), and the power was controlled at 15.5 kW;
[0056] 10) The pressure was maintained at 200 Pa for 200 h (Ar flow rate was maintained at 100 sccm, nitrogen flow rate was 23 sccm), and the power was increased to 17.1 kW;
[0057] 10) Pressure increased by 5000 Pa in 30 minutes (Ar flow rate 1000 sccm, nitrogen flow rate 0 sccm), power 5 kW;
[0058] 11) The pressure rises by 50,000 Pa in 1 h (Ar flow rate 1,000 sccm, nitrogen flow rate 0 sccm), and the power is 0 kW;
[0059] 12) Cool for 48 hours and open the furnace.
[0060]
[0061] As can be seen from Example 1, the horizontality of the thermal field can be specifically adjusted as needed based on the temperature conditions fed back from different temperature measurement points.
[0062] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.
[0063] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection, or communication; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.
[0064] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.
[0065] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.
Claims
1. A SiC crystal growth device, characterized in that: include: The quartz tube comprises a quartz tube body and a quartz tube top cover provided on the quartz tube body, wherein the quartz tube top cover is provided with a plurality of first temperature measuring through holes; A heat-insulating assembly is disposed inside the quartz tube and defines a closed heat-insulating accommodation space. A plurality of second temperature-measuring through holes are disposed on the top of the heat-insulating assembly. Each of the second temperature-measuring through holes is disposed opposite to one of the first temperature-measuring through holes to form a temperature-measuring channel. A crucible is arranged in the heat-insulating accommodation space; A temperature measuring gun is arranged on the top cover of the quartz tube and is used to measure the temperature of the SiC crystal growth thermal field through the temperature measuring channel.
2. The SiC crystal growth apparatus according to claim 1, wherein: The plurality of temperature measurement channels are symmetrically arranged about the central axis of the crucible.
3. The SiC crystal growth apparatus according to claim 1, wherein: The ratio of the distance between the central axis of the temperature measuring channel and the central axis of the crucible to the radius of the crucible is 2 / 3.
4. The SiC crystal growth apparatus according to claim 1, wherein: Meet at least one of the following conditions: The number of the temperature measurement channels is 2 to 8; The aperture of the first temperature measuring through hole is 10 mm to 20 mm, preferably 10 mm; The aperture of the second temperature measuring through hole is 10 mm to 20 mm, preferably 10 mm.
5. The SiC crystal growth apparatus according to claim 1, wherein A temperature measuring gun is correspondingly arranged at the top of each temperature measuring channel.
6. The SiC crystal growth apparatus according to claim 1, wherein: Multiple first temperature measuring holes are connected to each other to form a first annular temperature measuring opening; multiple second temperature measuring holes are connected to each other to form a second annular temperature measuring opening; the second annular temperature measuring opening and the first annular temperature measuring opening are arranged opposite to each other to form an annular temperature measuring channel.
7. The SiC crystal growth apparatus according to any one of claims 1 to 6, wherein: Also includes: A connecting piece is arranged on the top cover of the quartz tube, and the temperature measuring gun is movably connected to the connecting piece.
8. The SiC crystal growth apparatus according to claim 7, wherein: The connecting piece includes: A bracket, the bracket being arranged on the top cover of the quartz tube; a driving member, wherein the driving member is disposed on the bracket; a moving connecting rod, which is provided on the driving member and moves under the driving action of the driving member; The temperature measuring gun is connected to the movable connecting rod.
9. The SiC crystal growth apparatus according to claim 1, wherein: The crucible further comprises a plurality of adjustment platforms, the plurality of adjustment platforms being symmetrically arranged about the central axis of the crucible, each of the adjustment platforms comprising: A contact plate, the contact plate being disposed below the heat preservation assembly and in contact with the heat preservation assembly; A support body, the support body is arranged below the contact plate and connected to the contact plate; A driving assembly is connected to the support body and is used to drive the support body and the contact plate to rise and fall synchronously.
10. A method for adjusting the horizontal state of the thermal field of a SiC crystal growth device, characterized in that: include: Growing a SiC crystal using the SiC crystal growing apparatus according to any one of claims 1 to 9, wherein during the SiC crystal growth process, the temperature of the SiC crystal growth thermal field is monitored in real time by a temperature measuring gun; When the temperature difference between any two temperature measurement channels exceeds 5°C, the position of the insulation component and the crucible is adjusted by adjusting the carrier.
11. The method according to claim 10, characterized in that The adjusting of the heat preservation component and the crucible position by adjusting the carrier comprises: Lowering the position of the heat preservation component and the crucible on the side corresponding to the temperature measuring channel with a higher temperature; and / or The positions of the heat preservation component and the crucible on the side corresponding to the temperature measuring channel with a lower temperature are raised.
12. The method according to claim 10, characterized in that The real-time monitoring of the temperature of the SiC crystal growth thermal field by using a temperature measuring gun includes: The temperature measuring gun is moved at a constant speed along a predetermined trajectory while measuring the temperature; The temperature measuring gun is moved along a predetermined trajectory and stays above each temperature measuring channel for a predetermined time to perform temperature measurement.
13. The method according to claim 12, characterized in that The temperature measuring gun moves at a speed of 2 mm / s-5 mm / s.