Component carrier and method of manufacturing a component carrier

Abstract

A component carrier (100) comprising: a stack (102) comprising at least one electrically conductive layer structure (104) and at least one inorganic layer structure (106) wherein the at least one inorganic layer structure (106) has a planar first main surface (108) and an opposite planar second main surface (110); a geometrically discontinuous region (112) at the first main surface (108); and a reinforcing layer structure (114) at the second main surface (110), the reinforcing layer structure (114) at least partially overlapping the geometrically discontinuous region (112) in the lateral direction. The present disclosure also provides a method of manufacturing a component carrier (100).

Description

Technical Field

[0001] The invention relates to a component carrier and a method for producing a component carrier. Background Art

[0002] Against the backdrop of the ever-increasing product functionality of component carriers equipped with one or more components, the increasing miniaturization of these components, and the growing number of components associated with component carriers such as printed circuit boards or component carriers, more and more robust array components or packages with multiple contacts or connectors are being used. These contacts have increasingly smaller spacings between them. Component carriers must be mechanically robust and electrically reliable, even under harsh conditions.

[0003] Conventional methods for forming component carriers remain challenging. Summary of the Invention

[0004] It may be desirable to form a component carrier that is compact and reliable.

[0005] According to an exemplary embodiment of the present invention, a component carrier is provided, which includes a stack, the stack including at least one electrically conductive layer structure and at least one inorganic layer structure, wherein the at least one inorganic layer structure has a flat first main surface and an opposite flat second main surface, a geometrically discontinuous region at the first main surface, and a reinforcement layer structure at the second main surface; wherein the reinforcement layer structure at least partially overlaps the geometrically discontinuous region in a lateral direction.

[0006] According to another exemplary embodiment of the present invention, a method for manufacturing a component carrier is provided, wherein the method includes: providing a stack, the stack including at least one electrically conductive layer structure and at least one inorganic layer structure, wherein the at least one inorganic layer structure has a flat first major surface and an opposite flat second major surface, forming a geometrically discontinuous region on the first major surface; and forming a reinforcement layer structure on the second major surface, wherein the reinforcement layer structure at least partially overlaps the geometrically discontinuous region in a lateral direction.

[0007] In the context of the present application, the term "component carrier" may particularly refer to any support structure on which and / or in which one or more components can be accommodated in order to provide mechanical support and / or electrical and / or thermal connections. In other words, the component carrier can be configured as a mechanical and / or electronic and / or thermal carrier for the components. In particular, the component carrier can be one of a printed circuit board, an organic or inorganic intermediate and an IC (integrated circuit) substrate. For example, the component carrier can be a rigid-flex carrier or a flexible substrate. The component carrier can also be a hybrid board combining different carriers of the above-mentioned types and / or other types of component carriers.

[0008] In the context of the present application, the term "stack" may particularly denote a flat or planar body. For example, the stack may be a layer stack, in particular an at least partially laminated layer stack. Such a stack may be formed by connecting a plurality of layer structures, which are preferably arranged in a parallel manner, for example by applying mechanical pressure and / or heat. The stack may comprise at least one electrically conductive layer structure and at least one electrically insulating structure. The stack may comprise a plurality of sub-stacks, for example, a first multilayer stack below an inorganic layer structure and a further multilayer stack above the inorganic layer structure.

[0009] In the context of the present application, the term "layer structure" may particularly denote a continuous layer, a patterned layer or a plurality of discontinuous islands in a common plane.The layer structure may perform the function of providing electrical conductivity and / or electrical insulation.

[0010] In the context of this application, the term "inorganic layer structure" may particularly refer to a layer structure comprising an inorganic material, such as an inorganic compound. In particular, the dielectric material of the inorganic layer structure or even the entire inorganic layer structure may be made entirely or at least substantially entirely of an inorganic material. In another embodiment, the inorganic layer structure may include an inorganic dielectric material and an additional dielectric material. The inorganic compound may be a compound lacking carbon-hydrogen bonds or a compound that is not an organic compound. In an embodiment, the inorganic layer structure may include glass or quartz, such as silicon-based glass, particularly soda-lime glass, and / or borosilicate glass and / or aluminosilicate glass and / or lithium silicate glass and / or alkali-free glass. In another example, the inorganic layer structure may include a ceramic material, such as aluminum nitride and / or aluminum oxide and / or silicon nitride and / or boron nitride and / or tungsten, which may comprise a ceramic material. However, in another example, the inorganic layer structure may include a semiconductor material, such as silicon and / or germanium and / or silicon oxide and / or germanium oxide and / or silicon carbide and / or gallium nitride. In another embodiment, the inorganic layer structure may include (elemental) metals and / or metal alloys, such as copper and / or tin and / or bronze. However, in another embodiment, the inorganic layer structure may include inorganic materials not listed in the above embodiments, such as: MoS2, CuGaO2, AgAlO2, LiGaTe2, AgInSe2, CuFeS2, BeO.

[0011] In the context of the present application, the term "geometrically discontinuous region" may particularly denote any structural discontinuity that locally deviates from the plane of a planar main surface. For example, a geometrically discontinuous region may include indentations (e.g., cavities, blind holes, through-holes, etc.) and / or protrusions (e.g., pillars, steps, rings, undulating structures, etc.) surrounded by a planar region of the main surface. For example, a geometrically discontinuous region may be any local non-planarity relative to a planar surrounding region.

[0012] In the context of the present application, the term "reinforcement layer structure" may particularly denote a layer structure (particularly according to the above definition) on a main surface of an inorganic layer structure, the reinforcement layer structure being able to provide an inorganic layer structure having a geometrically discontinuous area on the other opposite main surface with a reinforcement function. For example, the reinforcement layer structure may provide additional crack resistance for the inorganic layer structure compared to the case without the reinforcement layer structure. More specifically, the reinforcement layer structure may be configured so that the combination of the inorganic layer structure and the reinforcement layer structure is less prone to cracks than the inorganic layer structure without the reinforcement layer structure. In particular, the reinforcement layer structure may be configured to, for example, at least partially compensate for the stress generated by the geometrically discontinuous area on the relative main surface during manufacture of a component carrier and / or during use in operation. The reinforcement layer structure may be configured to at least partially distribute the stress from the geometrically discontinuous area on the relative main surface or the entire relative main surface evenly to each area or corner of the reinforcement layer structure, thereby significantly reducing the overall stress in one area or point, thereby reducing the risk of cracks. For example, during pressure-supported assembly of a component in a cavity comprising a geometrically discontinuous region, stress may be applied to opposing major surfaces of the inorganic layer structure, and this stress may be reduced by the reinforcement layer structure. For example, during lamination of at least one additional layer onto one or both opposing major surfaces of the inorganic layer structure, stress may be applied to the inorganic layer structure due to the geometrically discontinuous region that deviates from a flat portion. The reinforcement layer structure may be configured to at least partially compensate for, absorb, and / or reduce and / or distribute stress resulting from the presence of the geometrically discontinuous region.

[0013] In the context of the present application, the term "a reinforcing layer structure that at least partially overlaps with the geometrically discontinuous region in the transverse direction" may particularly mean that, in a plan view of the stack perpendicular to the viewing direction of the flat main surface of the inorganic layer structure, the reinforcing layer structure and the geometrically discontinuous region may share at least part of a common area. For example, there may be an overlap between the reinforcing layer structure and the geometrically discontinuous region, i.e., in a plan view, a portion of the reinforcing layer structure corresponds to a portion of the geometrically discontinuous region, a portion of the reinforcing layer structure is outside the geometrically discontinuous region, and a portion of the geometrically discontinuous region is outside the reinforcing layer structure. Alternatively, in the plan view, the geometrically discontinuous region may be completely located inside the reinforcing layer structure, and the reinforcing layer structure may include a portion outside the geometrically discontinuous region. Still alternatively, in the plan view, the reinforcing layer structure may be completely located within the geometrically discontinuous region, and the geometrically discontinuous region may include a portion outside the reinforcing layer structure. In another embodiment, in a plan view, the geometrically discontinuous region and the reinforcing layer structure may be completely aligned or flush with each other. The overlap can be done in the thickness direction or in the vertical direction.

[0014] In the context of this application, the term "major surface" of a body may particularly refer to one of the two largest opposing surfaces of the body or the outermost opposing surfaces of the body. The major surfaces may be connected by a circumferential sidewall. The thickness of the body, such as an inorganic layer structure, may be defined by the distance between the two opposing major surfaces.

[0015] According to an exemplary embodiment of the present invention, a component carrier (e.g., a printed circuit board or an integrated circuit substrate) has a (preferably laminated) stack, which also has one or more inorganic layer structures (e.g., a glass plate). The inorganic layer structure may be more brittle, harder, and / or less elastic than the organic layer structure. The at least one inorganic layer structure may have two opposite generally planar main surfaces. However, one of the main surfaces may be provided with a geometrically discontinuous region (e.g., a cavity) that deviates from the planar portion. Advantageously, the opposite main surface of the at least one inorganic layer structure may be provided with a reinforcing layer structure that overlaps or corresponds to the spatial extent of the horizontal plane of the geometrically discontinuous region within the spatial extent of the horizontal plane. Due to the spatial relationship between the reinforcing layer structure and the geometrically discontinuous region, damage to the inorganic layer structure can be reliably prevented during the manufacturing process (e.g., during panel-level manufacturing) and / or during the operation of the component carrier, because the reinforcing layer structure can be designed to suppress and / or buffer the stress acting on at least one inorganic layer structure in view of its geometrically discontinuous region. For example, during wafer bonding in areas with geometrically discontinuous cavities, the risk of glass damage during pressure application to the at least one inorganic layer structure can be significantly reduced by the reinforcement layer structure. Furthermore, configuring the reinforcement layer structure as a layered reinforcement layer structure can result in little or no additional space consumption. Thus, exemplary embodiments can provide a compact and reliable component carrier.

[0016] Detailed Description of Exemplary Embodiments

[0017] In the following, further exemplary embodiments of the component carrier and the method will be explained.

[0018] In an embodiment, the geometrically discontinuous region comprises a cavity extending from the first major surface to at least one inorganic layer structure. Such a cavity may particularly represent a receiving hole, opening, groove, or through-hole in the inorganic layer structure. The cavity may be a through-hole extending through the entire inorganic layer structure, or a blind hole extending into the inorganic layer structure but having a closed bottom, or may be a groove or recess of any shape.

[0019] In an embodiment, the component carrier includes at least one component, such as a bridge wafer at least partially housed within the cavity. In the context of the present application, the term "component at least partially housed in a cavity" may particularly denote a component that is completely housed or only partially housed in a cavity in an inorganic layer structure. In a completely housed embodiment, the entire vertical spatial extent between the upper and lower ends of the component is located within the cavity. In a partially housed embodiment, only a portion of the vertical spatial extent between the upper and lower ends of the component is located within the cavity, for example, the component may extend upward and / or downward outside the cavity. In one embodiment, the upper end of the at least partially housed component may be aligned with the upper main surface of the inorganic layer structure and / or the lower end of the component may be aligned with the lower main surface of the inorganic layer structure. For example, the component may be an electrical component for providing an electrical function (e.g., a semiconductor chip), a thermal component for providing a cooling function (e.g., a copper or ceramic block), and / or an optical component for providing an optical function. The optical component may, for example, be an optical chip, an optoelectronic device, or an optical connector. When the component is configured as a bridge wafer, it can be electrically coupled to the second component and the third component to establish an electrical connection between the second component and the third component. The second and third components can be surface mounted and / or embedded on the inorganic layer structure.

[0020] In an embodiment, an outer electrically conductive layer structure of at least one electrically conductive layer structure is disposed on the first major surface and is disposed at a different vertical level than an electrically conductive pad (e.g., a chip terminal) on the upper major surface of the component. This vertical misalignment between the component pad and the outer electrically conductive layer structure on the inorganic layer structure may be a result of the embedding process.

[0021] In an embodiment, the geometrically discontinuous region includes a protrusion extending upward from the first major surface beyond at least one inorganic layer structure. Furthermore, the protrusion on the top side of the inorganic layer structure may cause stress on its bottom side, for example, due to stress applied during lamination. Given the stress caused by the top protrusion, providing a reinforcement layer structure at the bottom of the inorganic layer structure helps prevent damage to the inorganic layer structure.

[0022] In an embodiment, the reinforcement layer structure is disposed on the second major surface. For example, the reinforcement layer structure can be formed as a patterned layer, such as a patterned copper foil, coated on the second major surface of the inorganic layer structure. This can effectively compensate for and / or redistribute applied stress or pressure while suppressing crack formation within the inorganic layer structure. Furthermore, the inorganic layer structure can be equipped with electrical components to transmit electricity.

[0023] In embodiments, the reinforcement layer structure is electrically conductive, e.g., forming part of at least one electrically conductive layer structure. This may have the advantage that substantially no additional effort is required to manufacture the reinforcement layer structure, as it can be formed simultaneously with the electrically conductive layer structure provided in the stack. For example, a portion of a common patterned metal layer may be configured as the reinforcement layer structure, while another portion of the common patterned metal layer may be configured to provide an electrical function.

[0024] In embodiments, at least a portion of the electrically conductive layer structure is formed separately from the reinforcement layer structure. For example, the portion of the electrically conductive layer structure provided in addition to the reinforcement layer structure may be a peripheral portion, while the reinforcement layer structure may be a central portion of the common electrically conductive layer structure. This may provide the advantage of subdividing the electrically conductive layer structure, thereby enabling the electrically conductive layer structure to be configured to transmit current and / or signals. The electrically conductive layer structure may also be configured to ensure the physical and / or mechanical integrity of the component-carrier stack.

[0025] In an embodiment, the reinforcement layer structure forms traces and / or pads, for example, a pattern of traces and / or pads. In such an embodiment, the reinforcement layer structure can perform a dual function, namely, it can facilitate the electrical function of the component carrier by forming the traces and / or pads, and can also serve to strengthen the bottom surface of the inorganic layer structure against stress.

[0026] In an embodiment, the reinforcement layer structure is formed as a continuous structure, such as a continuous layer. Such a continuous structure can extend over the entire spatial area of ​​the geometrically discontinuous region on the other major surface opposite the inorganic layer structure. For example, the reinforcement layer structure can be a continuous metal layer, such as copper foil or an electroplated structure. This allows the reinforcement layer structure to provide its reinforcement function over a continuous spatial range.

[0027] In an embodiment, the reinforcing layer structure extends laterally over the entire geometrically discontinuous region, for example, in a manner aligned laterally with the entire geometrically discontinuous region. This can provide particularly reliable protection for the inorganic layer structure from damage. However, it is also possible for the reinforcing layer structure to extend (partially or completely) laterally over the geometrically discontinuous region.

[0028] In an embodiment, the reinforcing layer structure extends laterally over at least a portion of the boundary contour of the geometrically discontinuous region. This can effectively guide and / or distribute stress or pressure applied to the portion of the stack extending beyond the contour of the geometrically discontinuous region, thereby reliably suppressing cracks in the inorganic layer structure. For example, the boundary contour can be formed by an edge and / or corner portion of the geometrically discontinuous region.

[0029] In embodiments, the reinforcement layer structure may extend across the entire opposing major surface, away from the geometrically discontinuous region. The pattern extending beyond the geometrically discontinuous region can be used to perform the functions of the reinforcement layer structure or support structure, for example, in addition to electrical functions. This structure can distribute stress to more points or regions, potentially requiring individual areas to withstand less stress while allowing the entire region to withstand higher stress. Furthermore, the pattern across the entire surface can be any pattern to meet the desired design functionality.

[0030] In an embodiment, the reinforcing layer structure is inorganic and / or electrically insulating, for example forming part of at least one inorganic layer structure. For example, the bottom of the inorganic layer structure may be constructed, manufactured, or patterned to form a bottom profile that spatially corresponds at least partially to the geometrically discontinuous region, thereby protecting the inorganic layer structure from stress. The profile may provide local reinforcement, particularly in portions of the lower major surface of the inorganic layer structure that are susceptible to damage when stress is applied to the relatively geometrically discontinuous region.

[0031] In an embodiment, a reinforcement layer structure is configured and coupled to a stack for heat dissipation. For example, the reinforcement layer structure may be made of a highly thermally conductive material, such as copper, aluminum, or ceramic, having a thermal conductivity of at least 50 W / mK. In particular, when thermally coupled to the electrically conductive layer structure of the stack, which may be made of copper and therefore also have excellent thermal conductivity, the reinforcement layer structure may form part of a heat dissipation path for removing heat generated in the component carrier during operation. For example, the primary heat source of the component carrier may be embedded electronic components, which may be thermally coupled to the reinforcement layer structure for heat dissipation.

[0032] In an embodiment, the reinforcement layer structure is electrically coupled to at least one electrically conductive layer structure, for example for transmitting electrical signals and / or power. Thus, the reinforcement layer structure itself may contribute to the electronic functionality of the component carrier.

[0033] In another embodiment, the reinforcement layer structure is functionally inactive beyond its reinforcing function. In particular, the reinforcement layer structure of this embodiment can be electrically decoupled from the electrically conductive layer structure of the stack. With respect to the actual function of the component carrier, the reinforcement layer structure of this embodiment can be a virtual structure used solely to reinforce the inorganic layer structure during the manufacturing process.

[0034] In an embodiment, the reinforcement layer structure is electrically decoupled from the at least one electrically conductive layer structure. For example, the reinforcement layer structure may be embodied as one or more metal islands separated from the other electrically conductive layer structures.

[0035] In an embodiment, the at least one inorganic layer structure forms the core of the stack. Thus, the inorganic layer structure can form a vertical central support, forming the basis for additional organic layer structures on one or both of its opposing major surfaces. Such a core structure may provide mechanical stability, may facilitate electrical routing of the component carrier (particularly for signal transmission and / or power supply), and / or may aid in heat dissipation.

[0036] In an embodiment, at least one inorganic layer structure comprises at least one of glass, ceramics, semiconductors, such as silicon and silicon dioxide, or is composed of at least one of glass, ceramics, semiconductors, such as silicon and silicon dioxide. Therefore, suitable materials for the inorganic layer structure are glass (particularly silicon-based glass), ceramics (such as aluminum nitride and / or aluminum oxide) and materials including semiconductors (such as silicon oxide, silicon, silicon carbide, gallium nitride, etc.). Inorganic layer structures of metallic materials, such as copper, can also be manufactured. This may have the advantage of having a large number of materials with individual chemical and / or physical properties, so that materials can be freely selected during the design and / or manufacture of the stack.

[0037] In an embodiment, the reinforcement layer structure has a bearing force of at least 40 Newtons. With such a configuration, the reinforcement layer structure may be able to withstand forces typically occurring during a wafer attach process where an electronic component is pressed into a cavity in the inorganic layer structure for attaching it.

[0038] In an embodiment, at least 50%, for example 60% to 80%, of the surface area of ​​the second main surface that overlaps with the surface area of ​​the geometrically discontinuous area of ​​the first main surface is covered by the material of the reinforcement layer structure. This ensures that a sufficiently large reinforcement effect can be obtained by the reinforcement layer structure.

[0039] A first percentage of coverage with the material of the reinforcing layer structure in a first surface area of ​​the second main surface that overlaps the surface area of ​​the geometrically discontinuous region at the first main surface deviates by no more than 20%, for example, no more than 10%, from a second percentage of coverage with the material of at least one electrically conductive layer structure in a second surface area of ​​the second main surface excluding the first surface area. On the one hand, a certain deviation between the first and second percentages can allow for independent adjustment of the reinforcing and electrically conductive functions of the component carrier. On the other hand, excessive deviation between the first and second percentages can result in a significantly asymmetric structure of the component carrier, which can increase warpage. Limiting the deviation to no more than 20%, and preferably no more than 10%, allows for a combination of design freedom and a low-warpage configuration.

[0040] In an embodiment, the thickness of at least one inorganic layer structure is no greater than 500 μm, for example no greater than 200 μm. Given the ongoing trend toward miniaturization, thin inorganic layer structures may be desirable. However, very thin inorganic layer structures may make them susceptible to failure under mechanical stress. By providing the reinforcement layer structure described herein, stress applied to the inorganic layer structure can be reduced, redirected, absorbed, and / or suppressed, thereby enabling such thin inorganic layer structures without the risk of failure.

[0041] In an embodiment, the component carrier includes at least one layer stack comprising an organic material formed on the first and / or second main surfaces. For example, such a multilayer stack may include a wiring structure, a redistribution structure, and / or a heat dissipation structure. The multilayer stack can be formed on or above the inorganic layer structure by lamination, i.e., heating and / or pressurization. This may offer the advantage of being able to easily and efficiently combine complex electrically conductive layer structures. However, the stack may also include a multilayer stack on or above one main surface of the inorganic layer structure and / or geometrically discontinuous region, and another multilayer stack on or above another main surface of the inorganic layer structure and / or reinforcement structure. In one embodiment, the multilayer stacks may be asymmetric relative to each other. While asymmetric multilayer stacks on two opposing main surfaces of a core or another central carrier structure can typically be a root cause of warping and delamination, providing a hard and mechanically robust inorganic layer structure (preferably made of glass) in combination with a reinforcement layer structure also allows for such asymmetric stacks. This increases the design freedom of the component carrier designer. Alternatively, the multi-layer stacks may be symmetrical with respect to each other.

[0042] In an embodiment, a multilayer stack on one main surface of an inorganic layer structure has a higher integration density of electrically conductive layer structures than another multilayer stack on the other main surface of an opposite inorganic layer structure. The term "integration density" can refer to the number of electrically conductive layer structures per unit area or volume of the corresponding area of ​​the component carrier. In particular, the number of contacts (including pads) per area or volume of a multilayer stack may be higher than the number of contacts (including pads) per area or volume of another multilayer stack. Therefore, integration density may mean the number of electrically conductive layer structures (such as traces) per square millimeter. The integration density above and below the inorganic layer structure may be different. For example, in a multilayer construction for surface-mounted devices (such as semiconductor chips), the integration density may be higher. Therefore, a multilayer stack of component carriers with a higher degree of integration can provide a mounting area for mounting one or more electronic components such as semiconductor chips. Preferably, a multilayer stack of component carriers with a higher degree of integration can be formed on the first main surface of the inorganic layer structure.

[0043] In an embodiment, at least one electrically conductive layer structure includes at least one vertical through-connector extending through the entire thickness of at least one inorganic layer structure. Advantageously, one or more vertical through-connectors, such as copper pillars and / or copper-filled laser vias extending through the entire thickness of the inorganic layer structure, can electrically couple the multilayer stack on two opposing major surfaces of the inorganic layer structure. Thus, even complex electrically conductive paths can be formed.

[0044] In an embodiment, the reinforcement layer structure comprises a matrix arrangement of reinforcement mats (see Figure 8 Additionally or alternatively, the reinforcement layer structure comprises an array of reinforcement strips arranged side by side (see Figure 9 ). Through such a configuration, a simple manufacturing process and effective reinforcement can be combined.

[0045] In one embodiment, the component carrier comprises a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier can be a laminate of the electrically insulating layer structure and the electrically conductive layer structure, in particular a laminate formed by applying mechanical pressure and / or heat. This stack can provide a plate-shaped component carrier that offers a large mounting surface for other components while still being very thin and compact.

[0046] In an embodiment, the component carrier is shaped as a plate. This facilitates a compact design, wherein the component carrier still provides a large base for mounting components. In particular, bare chips as an example of electronic components can be surface mounted on a thin board such as a printed circuit board.

[0047] In an embodiment, the component carrier is configured as one of the group consisting of a printed circuit board, a substrate, in particular an IC substrate, and an intermediate layer.

[0048] In the context of this application, the term "printed circuit board" (PCB) may particularly denote a plate-shaped component carrier formed by laminating several electrically conductive layer structures with several electrically insulating layer structures, for example, by applying pressure and / or providing heat. As a preferred material for PCB technology, the electrically conductive layer structures are made of copper, while the electrically insulating layer structures may comprise resin and / or fiberglass, so-called prepreg or FR4 materials. The various electrically conductive layer structures can be formed with holes through the laminate, for example by laser drilling or mechanical drilling, and partially or completely filled with electrically conductive material (particularly copper) to connect them to each other in the desired manner, thereby forming vias or any other through-hole connections. Filled holes can connect the entire stack (through-hole connections that extend through several layers or the entire stack), or they can connect at least two electrically conductive layers, known as through-holes. Similarly, in order to accommodate optoelectronic circuit boards (EOCBs), optical interconnects can be formed through the various layers of the stack. Printed circuit boards are typically configured to accommodate one or more components on one or two opposing surfaces of the plate-shaped printed circuit board. These components can be connected to the respective main surfaces by soldering. The dielectric portion of the PCB may include resin and reinforcing fibers (such as fiberglass).

[0049] In an embodiment, the component carrier is an integrated circuit substrate. In the context of the present application, the term "integrated circuit substrate" (IC substrate) can particularly refer to a component carrier with a size and spacing adjusted according to the requirements of the integrated circuit elements (particularly semiconductor chips) mounted thereon. With respect to a PCB, an IC substrate can be a relatively small component carrier on which one or more integrated circuit elements can be mounted, and can serve as a connector between one or more chips and the PCB, or be inserted into a socket mounted on the PCB. For example, the IC substrate can have substantially the same size as the electronic component to be mounted thereon (for example, in the case of a chip scale package (CSP)). In another embodiment, the IC substrate can be larger than a specified component (for example, in a flip chip ball grid array, FCBGA configuration). More specifically, the IC substrate can be understood as a carrier for electrical connections or electrical networks, and a component carrier comparable to a printed circuit board (PCB), but with a relatively high horizontal and / or vertical arrangement connection density. For example, a horizontal connector is a conductive path, and a vertical connector may be a drill hole. These lateral and / or vertical connectors are arranged within the IC substrate and can be used to provide electrical, thermal and / or mechanical connections between packaged components or non-packaged components (such as bare chips), in particular IC chips, and printed circuit boards or intermediate layers. The dielectric part of the IC substrate can be composed of a resin with reinforcing particles (such as reinforcing balls, in particular glass balls). The spacing of the IC substrate, that is, the distance between corresponding edges of two adjacent metal structures, can be no more than 150 μm, in particular no more than 100 μm. In contrast, the spacing of some PCBs may be at least 200 μm, in particular at least 300 μm.

[0050] The substrate or intermediate may include or be composed of at least one layer of glass, silicon (Si) and / or a photoimageable or dry-etched organic material, such as an epoxy-based build-up material (such as an epoxy-based build-up film) or a polymer compound (which may or may not include photosensitive and / or heat-sensitive molecules), such as polyimide or polybenzoxazole.

[0051] In one embodiment, at least one electrically insulating layer structure comprises at least one of the following: a resin or polymer, such as an epoxy resin, a cyanate resin, a benzocyclobutene resin, a melamine derivative, polybenzoxazole (PBO), a bismaleimide-triazine resin, a polystyrene derivative (e.g., based on polyphenylene ether, PPE), a polyimide (PI), a polyamide (PA), a liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE), bisbenzocyclobutene (BCB), and / or combinations thereof. Reinforcement layer structures, such as meshes, fibers, spheres, or other types of filler particles, for example made of glass (multilayer glass) to form a composite material, may also be used. Semi-cured resins combined with reinforcing agents, such as fibers impregnated with the above resins, are called prepregs. These prepregs are often named after their properties, such as FR4 or FR5, which describe their flame retardant properties. Although prepregs, particularly FR4, are generally preferred for rigid PCBs, other materials, particularly epoxy-based build-up materials (e.g., build-up films) or photoimageable dielectric materials, may also be used. For high-frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymers and / or cyanate ester resins may be preferred. In addition to these polymers, low-temperature co-fired ceramics (LTCC) or other low, very low or ultra-low DK materials can be used as electrical insulating structures in component carriers.

[0052] In an embodiment, at least one electrically conductive layer structure comprises at least one member of the group consisting of copper, aluminum, nickel, silver, gold, palladium, tungsten, titanium, and magnesium. While copper is generally the preferred material, other materials or coated versions thereof are also possible, in particular coatings with superconducting materials or conductive polymers such as graphene or poly(3,4-ethylenedioxythiophene) (PEDOT).

[0053] The at least one component can be selected from the group consisting of a non-conductive inlay, a conductive inlay (e.g. a metal inlay, preferably comprising copper or aluminum), a heat transfer element (e.g. a heat pipe), a light-conducting element (e.g. an optical waveguide or optical conductor connection), an electronic component, or a combination thereof. The inlay can be, for example, a metal block with or without a coating of insulating material (IMS-inlay), which can be surface-mounted to promote heat dissipation. Suitable materials are defined by their thermal conductivity, which should be at least 2 W / mK. These materials are typically based on, but not limited to, metals, metal oxides, and / or ceramics, such as copper, aluminum oxide (Al2O3), or aluminum nitride (AlN). Other geometries that increase the surface area are also often used to increase the heat exchange capacity. Furthermore, the component may be an active electronic component (implementing at least one pn junction), a passive electronic component such as a resistor, an inductor or a capacitor, an electronic chip, a memory device (e.g. a DRAM or other data memory), a filter, an integrated circuit (e.g. a field programmable gate array (FPGA), a programmable array logic (PAL), a general array logic (GAL) and a complex programmable logic device (CPLD)), a signal processing element, a power management component (e.g. a field effect transistor (FET), a metal oxide semiconductor field effect transistor (MOSFET), a complementary metal oxide semiconductor (CMOS), a junction field effect transistor (JFET) or an insulated gate field effect transistor (IGFET)), or a transistor. These include transistors (IGFETs), all of which are based on semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (Ga2O3), indium gallium arsenide (InGaAs), indium phosphide (InP), and / or any other suitable inorganic compound), optoelectronic interface elements, light-emitting diodes, optical connectors, voltage converters (e.g., DC / DC converters or AC / DC converters), cryptographic components, transmitters and / or receivers, electromechanical transducers, sensors, actuators, microelectromechanical systems (MEMS), microprocessors, capacitors, resistors, inductors, batteries, switches, cameras, antennas, logic chips, and energy harvesting units. However, other components can be surface-mounted on the component carrier. For example, a magnetic element can be used as the component. Such a magnetic element can be a permanent magnetic element (e.g., a ferromagnetic element, an antiferromagnetic element, a multiferromagnetic element, or a ferromagnetic element, such as a ferrite core) or a paramagnetic element. However, the component can also be an IC substrate, an intermediate body, or another component carrier, for example in a board-in-board configuration. The component can be surface-mounted on the component carrier.In addition, other components can also be used as component carriers, in particular those components which generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment.

[0054] In an embodiment, the component carrier is a laminated component carrier. In such an embodiment, the component carrier is a composite of multiple layers stacked and joined together by application of pressure and / or heat.

[0055] After processing the inner layer structure of the component carrier, one or both opposing main surfaces of the processed layer structure can be covered (in particular by lamination) symmetrically or asymmetrically with one or more further electrically insulating and / or electrically conductive layer structures (in particular by lamination). In other words, the accumulation can be continued until the desired number of layers is obtained.

[0056] After the formation of the stack of electrically insulating and electrically conductive layer structures has been completed, the resulting layer structure or component carrier can be subjected to a surface treatment.

[0057] In particular, regarding surface treatment, electrically insulating solder can be applied to one or both opposing major surfaces of a laminate or component carrier. For example, such solder can be formed over the entire major surface, and the solder layer can then be shaped to expose one or more electrically conductive surface portions that are used to electrically couple the component carrier to an electronic peripheral. This effectively protects surface portions of the component carrier, particularly those containing copper, from oxidation or corrosion.

[0058] As far as surface treatment is concerned, a surface treatment can also be selectively applied to the exposed electrically conductive surface portions of the component carrier. Such a surface treatment can be an electrically conductive covering material on the electrically conductive layer structures (e.g. pads, conductive tracks, etc., in particular comprising or consisting of copper) exposed on the surface of the component carrier. If such exposed electrically conductive layer structures are not protected, the exposed electrically conductive component carrier material (in particular copper) may oxidize, reducing the reliability of the component carrier. A surface treatment portion can then be formed, for example as an interface between a surface-mounted component and the component carrier. The surface treatment portion has the function of protecting the exposed electrically conductive layer structures (in particular copper circuits) and enabling a connection process with one or more components, for example by soldering. Suitable materials for surface treatment include organic solderability preservatives (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium gold (ENIPIG), gold (in particular hard gold), chemical tin, nickel gold, nickel palladium, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] The aspects defined above and further aspects of the present invention are apparent from the examples to be described hereinafter and are explained with reference to these examples of embodiment.

[0060] Figure 1 A cross-sectional view of a component carrier according to an exemplary embodiment of the invention is shown.

[0061] Figure 2 A component carrier according to an exemplary embodiment of the invention is shown in cross-sectional and plan views.

[0062] Figure 3 The stress distribution at a flat surface of a component carrier according to an exemplary embodiment of the present invention as obtained from simulations is shown in comparison with a conventional component carrier.

[0063] Figure 4 A detail of a component carrier according to an exemplary embodiment of the invention is shown.

[0064] Figure 5 and Figure 6 Shown is a graph indicating simulation results of stresses acting on a component carrier according to an exemplary embodiment of the present invention compared to a conventional component carrier.

[0065] Figure 7 A cross-sectional view of a component carrier according to an exemplary embodiment of the invention is shown.

[0066] Figure 8 A plan view of a component carrier according to an exemplary embodiment of the invention is shown.

[0067] Figure 9 A plan view of a component carrier according to an exemplary embodiment of the invention is shown.

[0068] Figure 10 A sectional view of a component carrier according to another exemplary embodiment of the present invention is shown.

[0069] Figures 11 to 13 The bottom main surface of a stack of component carriers with a reinforcement layer structure according to different exemplary embodiments of the present invention is shown. DETAILED DESCRIPTION

[0070] The illustrations in the figures are schematic. In different drawings, similar or identical elements are provided with the same reference numerals.

[0071] Before describing exemplary embodiments in more detail with reference to the accompanying drawings, some basic considerations on which exemplary embodiments of the present invention were developed will be summarized.

[0072] Glass-core substrates are being considered as an alternative to organic substrates. Conventional methods for manufacturing component carriers based on glass sheets with cavities for embedding electronic components (such as wafers) can present issues with glass damage during the wafer bonding process. More specifically, the glass core can easily break during the wafer bonding and pressure stages.

[0073] According to an exemplary embodiment of the present invention, a component carrier (e.g., a PCB) may be provided with a (e.g., laminated) stack of layers further comprising one or more inorganic layer structures (which may be made of glass). Optionally, additional layers may be provided on one or two opposing main surfaces of the inorganic layer structure, the additional layers comprising an organic layer structure (e.g., a prepreg or resin layer). The inclusion of at least one inorganic layer structure may involve a potential brittle structure that tends to crack under the influence of mechanical stress, force, or pressure. In particular, when one of the flat main surfaces of the inorganic layer structure has a geometrically discontinuous region (e.g., a groove for embedding a component), mechanical stress, pressure, and / or force may be crucial to the mechanical integrity of the inorganic layer structure, particularly on its opposite side. Beneficially, the other main surface of the inorganic layer structure relative to the geometrically discontinuous region may be equipped with a spatially partially or completely corresponding reinforcement layer structure. This reinforcement layer structure may suppress the mechanical stress caused by the geometrically discontinuous region during the manufacture of the component carrier or during daily use. For example, this can reduce the risk of cracks forming in the inorganic layer structure, such as those caused by pressing on the component to be embedded in the cavity of the geometrically discontinuous region of the inorganic layer structure. Forming the reinforcement layer structure into a thin layer structure can strictly limit the space consumption of the component carrier in the vertical direction. Therefore, the exemplary embodiments can provide a compact and reliable component carrier. In particular, the exemplary embodiments of the present invention can reduce the risk of cracks in the glass core cavity area and can reduce high stress deformation by providing the reinforcement layer structure.

[0074] The main point of the exemplary embodiment of the present invention is the specific design of the inorganic layer stack with geometrically discontinuous areas, in particular, a glass core with a cavity for embedding electronic components therein. According to this design, a reinforcement layer structure in the form of a copper pad can be formed in the cavity area on the back of the glass core to release the stress applied to the glass core during component embedding. Therefore, providing a reinforcement layer structure may lead to reduced mechanical stress. Advantageously, this can reduce the risk of glass breakage. In addition, this may have a positive impact on the warpage control of the component carrier. Therefore, the exemplary embodiment can bring the advantage of reducing process stress to protect the glass during the manufacturing process, thereby reducing the risk of glass breakage. Helpfully, the simulation of the wafer bonding process shows that due to the reinforcement layer structure provided on the back of the inorganic layer structure, there is less stress. After the wafer is bonded, there may be a packaging process for forming a layer stack on the front and / or back of at least one inorganic layer structure. For example, a stack of resin sheets or prepreg sheets can occur when forming the layer stack. In this case, lamination can be applied to the components of the component carrier, and advantageously, the reinforcement layer structure (for example, embodied as one or more simple copper pads) can relieve stress and can thereby protect at least one inorganic layer structure from fracture, cracking or damage. In particular, considering the increasing size and / or number of cavities, the increasing size and / or number of components to be embedded, and the increasingly thin inorganic layer structures (for example, one or more glass cores), providing a reinforcement layer structure (for example, one or more appropriately designed and positioned copper pads) on the cavity area can make the panel or component carrier more robust and can reduce the risk of crack formation during the manufacturing process. At the same time, due to the provision of the reinforcement layer structure, the corresponding component carrier or panel can show improved warpage performance. Therefore, the reinforcement layer structure can also balance warpage, especially in the presence of asymmetric stacks or structures. Advantageously, the reinforcement layer structure embodied as one or more copper pads can make the copper density on the back side of at least one inorganic layer structure of the panel or component carrier more uniform or more balanced. This can reduce the risk of fluctuations in one or more laminated organic layer structures due to the volume of the dielectric layer encapsulated in the cavity. The lamination on both surfaces can be reduced, which allows for better control over the planarity of the dielectric layer.

[0075] When forming component carriers with inorganic layer structures, such as in glass-core technology, there can be a higher risk of glass breakage compared to purely organic substrates. Exemplary embodiments of the present invention provide a design with a reinforcing layer structure on a major surface of the inorganic layer structure, which laterally faces a geometrically discontinuous region on the other major surface. This can reduce the risk of glass breakage issues and contribute to higher yields in the manufacturing process.

[0076] In short, the exemplary embodiment can apply the anti-fracture portion in the form of a reinforcement layer structure to a glass substrate having a cavity and a receiving component. Thus, the breakage of the glass substrate can be avoided. For example, as an example of a reinforcement layer structure, the use of a back pad on the glass substrate can reliably avoid glass breakage caused by mechanical impact. In other words, one or more pads can be provided in a geometrically discontinuous area facing the front of the inorganic layer structure, such as the back of the cavity, for mechanical stress dissipation. Advantageously, the reinforcement layer structure embodied as one or more metal pads in the back main surface area that at least partially corresponds to a relatively geometrically discontinuous area in the front main surface area can be manufactured simultaneously with other metal pads located at the same height level but located on the periphery. In other words, the reinforcement pad and the other pads on the periphery can be manufactured using a common process, such as by patterning a common metal layer. Therefore, there is basically no additional effort involved in the manufacture of the reinforcement layer structure.

[0077] According to an exemplary embodiment of the present invention, a component carrier is provided, which includes a stack, the stack including at least one electrically conductive layer structure and at least one inorganic layer structure, the at least one inorganic layer structure including a flat first main surface and an opposite flat second main surface; wherein the first main surface includes interrupted portions (which can also be expressed as geometrically discontinuous areas) with different extension degrees from the main plane surface, and includes a reinforcement layer structure on the second main surface that at least partially overlaps the interrupted portions when viewed from a top view.

[0078] The following advantageous embodiments are possible: In one embodiment, the interrupted portion comprises a cavity. At least one component may be provided or embedded in the cavity, in particular a bridge wafer (e.g., a wafer having features such as exposed pads, suitable for connection to at least two components to connect the at least two components). For example, the external electrically conductive layer structure on the first main surface is at a different vertical position than the component and / or the electrically conductive region of the component. For example, the interrupted portion comprises a protrusion extending beyond the flat first main surface. In one embodiment, a reinforcement layer structure is provided on the second main surface. For example, the reinforcement layer structure comprises a metal layer structure, in particular corresponding to at least one portion of at least one electrically conductive layer structure of the stack. In one embodiment, at least one electrically conductive layer structure comprises an additional portion of the structure in addition to the reinforcement layer structure. In other words, the reinforcement portion and the additional portion may be flush with one another along the thickness direction of the stack. For example, the reinforcement layer structure comprises traces and / or pads. For example, the reinforcement layer structure is in the form of a pattern of pads and / or traces. In one embodiment, the reinforcement layer comprises a continuous structure. In this context, "continuous" may mean excluding a patterned structure, such as a foil-like structure. For example, the reinforcement layer structure has a planar extension within the planar extension of the interrupted portion. For example, the reinforcement layer structure has a planar extension that at least partially overlaps with the boundary contour of the planar extension of the interrupted portion. In an embodiment, the reinforcement layer structure includes a portion that overlaps at least one edge and / or corner portion of the interrupted portion. For example, the reinforcement layer structure includes an inorganic layer structure (e.g., glass, ceramic, etc.). In an embodiment, the reinforcement layer structure is configured and connected to the stack to dissipate heat and / or be electrically connected to at least one electrically conductive layer structure (e.g., for transmitting signals and / or for transmitting power). For example, the reinforcement layer structure is insulated from the other electrically conductive layer structures. For example, at least one inorganic layer structure is the core of the stack. In an embodiment, at least one inorganic layer structure includes at least one of glass, ceramic, silicon, and quartz. For example, the bearing force of at least one inorganic layer structure and / or reinforcement layer structure is at least 40N, for example, not more than 80N. In an embodiment, the pressure distribution of the metal structure depends on the design of the metal structure.

[0079] Figure 1 1 shows a cross-sectional view of a component carrier 100 according to an exemplary embodiment of the present invention. Figure 1 The component carrier 100 may be embodied as an integrated circuit (IC) substrate or a printed circuit board (PCB) having an inorganic core.

[0080] The component carrier 100 shown includes a stack 102 having a plurality of electrically insulating layer structures 106, 150 and a plurality of electrically conductive layer structures 104. The electrically insulating layer structures 106, 150 may include at least one inorganic layer structure 106 and at least one organic layer structure 150. In the illustrated embodiment, the stack 102 includes a lower sub-stack in the form of a laminated lower multilayer stack 122 and a laminated upper sub-stack in the form of a laminated upper multilayer stack 124. A central sub-stack 152 may be a core between the multilayer stacks 122, 124. Each layer stack 122, 124 may include an organic material, such as an epoxy resin, and may be formed on a respective one of the first major surface 108 and the second major surface 110 of the central sub-stack 152. An adhesion promoter may be located between the central sub-stack 152 and the lower layer stack 122 disposed on the second major surface 110 , and / or an adhesion promoter may be located between the central sub-stack 152 and the upper layer stack 124 disposed on the first major surface 108 .

[0081] Alternatively, there may be a structure in which a pattern is formed directly on the glass surface (e.g., by sputtering a metal film as a seed layer on the glass). However, there may be a risk of delamination between the glass surface and the seed layer, so an adhesion promoter may be added between the seed layer and the glass surface. The adhesion promoter may be a metal layer, such as a titanium layer, which may improve the adhesion between the glass and the seed layer. Alternatively, the properties of the glass surface may be modified by chemical or gas treatment to improve the adhesion between the glass and the seed layer or resin.

[0082] The electrically conductive layer structure 104 may include a patterned copper layer that can form horizontal pads and / or horizontal wiring structures. In addition or alternatively, the electrically conductive layer structure 104 may include vertical through-connectors, such as copper pillars and / or copper-filled laser vias. Furthermore, the organic electrically insulating layer structure 150 may be, for example, a prepreg or a resin sheet. The outermost organic electrically insulating layer structure 150 may form a solder mask 154. The central inorganic layer structure 106 is embodied here as a glass core or glass plate, but may also be made of ceramics, semiconductors, quartz, etc. For example, the thickness D of the inorganic layer structure 106 may be no greater than 500 μm, for example 400 μm. Such a very thin glass core may be a highly preferred material for manufacturing the compact component carrier 100, but may be susceptible to damage from mechanical loads. Alternatively, the thickness D of the inorganic layer structure 106 may be in the range of 500 μm to 1000 μm. The lower multilayer stack 122 is formed below the inorganic layer structure 106 , and the upper multilayer stack 124 is formed above the inorganic layer structure 106 .

[0083] As shown, the inorganic layer structure 106 has a flat first major surface 108 and an opposite flat second major surface 110. However, a geometrically discontinuous region 112 is formed in the first major surface 108. The geometrically discontinuous region 112 is formed as a cavity 116 extending from the first major surface 108 to the inorganic layer structure 106. For example, the cavity 116 can be formed as a blind hole in the inorganic layer structure 106. For example, the cavity 116 can be formed by laser processing, mechanical wear and / or etching. The cavity 116 can have a circular shape such as a cylindrical shape, or have an edge shape such as a square. As shown, an electronic component 118 can be accommodated in the cavity 116 so that the electronic component 118 is embedded in the stack 102. For example, the electronic component 118 can be a semiconductor wafer, such as a bridge wafer. The electronic component 118 can also be replaced by a plurality of electronic components in the cavity 116, or a component with other functions other than electronic functions can be inserted into the cavity 116. For example, a copper block or a ceramic block can be inserted as a component into cavity 116 for heat dissipation purposes. The gap or unfilled area of ​​cavity 116 between component 118 and inorganic layer structure 106 can be filled with a filler material 156. Filler material 156 can be, for example, a resin material or glue. For example, the gap or unfilled area can be filled by laminating the organic layer structure 150 of layer stack 124 on top of the inorganic layer structure 106 after embedding component 118. Resin that flows from organic layer structure 150 into cavity 116 during lamination can then constitute filler material 156.

[0084] When inserting component 118 into cavity 116 formed in planar major surface 108 of inorganic layer structure 106, adhesive tape 158 (e.g., wafer-bonding type) on the bottom major surface of electronic component 118 can be pressed with significant force against the bottom of cavity 116 to secure component 118 in cavity 116. Given the brittleness and inelasticity of glass or similar materials used to form inorganic layer structure 106, cracks may occur under cavity 116 in conventional methods, particularly when the surface of the inorganic layer structure 106 is flat and ... Figure 1 The crack critical region is indicated by reference numeral 160 .

[0085] According to a preferred embodiment of the present invention, the risk of damage to the inorganic layer structure 106 during the manufacturing process (in particular during the application of force or pressure for component embedding) can be reduced by providing a reinforcement layer structure 114 at the second main surface 110 of the inorganic layer structure 106. For example, the reinforcement layer structure 114 has a bearing capacity of at least 40 Newtons. As shown in the figure, the reinforcement layer structure 114 and the geometrically discontinuous area 112 in the form of a cavity 116 overlap for the most part in the lateral direction. More precisely, in the viewing direction 174 perpendicular to the parallel flat main surfaces 108, 110, the geometrically discontinuous area 112 that deviates from the plane and the reinforcement layer structure 114 can be partially or even completely aligned with each other in the lateral direction, as shown by the alignment line 162. Figure 1 , the reinforcement layer structure 114 extends transversely over the extension of the geometrically discontinuous region 112 and is aligned at its outer end with the outer end of the geometrically discontinuous region 112. Preferably, the transverse outer contour of the geometrically discontinuous region 112 at the first major surface 108 may correspond to the transverse outer contour of the reinforcement layer structure 114 on the second major surface 110 of the inorganic layer structure 106. In an embodiment, the absolute value of the difference between the area defined by the outer contour of the reinforcement layer structure 114 and the area defined by the outer contour of the geometrically discontinuous region 112 divided by the area defined by the outer contour of the geometrically discontinuous region 112 may be no greater than 20%, preferably no greater than 10%. Preferably, the reinforcement layer structure 114 may extend transversely over the boundary contour of the geometrically discontinuous region 112, wherein the boundary contour may be formed by the edge and / or corner portion of the geometrically discontinuous region 112. Typically, the entire surface area of ​​the second major surface 110 or only a portion of the surface area that overlaps the surface area of ​​the geometrically discontinuous region 112 on the first major surface 108 may be covered by the reinforcing material, e.g. Figure 1 In the example of copper. Figure 1 In an embodiment, approximately 60% to 70% of the surface area of ​​the second main surface 110 that overlaps with the surface area of ​​the geometrically discontinuous region 112 at the first main surface 108 is covered by the material of the reinforcement layer structure 114 .

[0086] In the illustrated embodiment, the reinforcement layer structure 114 is composed of an array of electrically conductive structures, such as copper pads, arranged on the second major surface 110 below the geometrically discontinuous region 112 at the first major surface 108. Additionally or alternatively, the reinforcement layer structure 114 may include one or more electrically insulating elements, which, for example, may form part of a correspondingly modified second major surface 110 of the inorganic layer structure 106 (not shown).

[0087] Advantageously, the reinforcement layer structure 114 can form part of the electrically conductive layer structure 104 on the bottom side of the inorganic layer structure 106, i.e., on the second main surface 110. More specifically, the reinforcement layer structure 114 can be formed by a central portion 164 of the patterned metal layer of the electrically conductive layer structure 104. Furthermore, a peripheral portion 166 of the electrically conductive layer structure 104 laterally surrounds the central portion 164, is formed separate from the reinforcement layer structure 114, and forms a trace and / or pad of the component carrier 100. Thus, elements of the electrically conductive layer structure 104 in the peripheral portion 166 can be electrically connected to other electrically conductive layer structures 104 of the component carrier 100. For example, elements of the electrically conductive layer structure 104 in the peripheral portion 166 can be electrically coupled via vertical through-connectors 132 that extend through the inorganic layer structure 106 to the electrically conductive layer structure 104 of the opposing stack 124. As shown, the vertical through-connectors 132 extend over the entire thickness D of the inorganic layer structure 106 and electrically interconnect the layer stacks 122, 124. Thus, elements of the electrically conductive layer structure of the peripheral portion 166 may have an electronic function.

[0088] In contrast, the elements of the electrically conductive layer structure 104 in the central portion 164 that constitute the reinforcement layer structure 114 may be non-functional, aside from their reinforcing function. In particular, the elements of the electrically conductive layer structure 104 in the central portion 164 that constitute the reinforcement structure 114 may not have any electronic function during operation of the component carrier 100. In such an embodiment, the reinforcement layer structure 114 may be functionally inactive, aside from its reinforcing function, and may be electrically decoupled from the other electrically conductive layer structures 104. Adhesion promoters may be applied to the structures of the central portion 164 and / or the peripheral portion 166. This may reduce the risk of delamination.

[0089] However, in another embodiment, the reinforcement layer structure 114 of the central portion 164 can be a pattern that forms traces and / or pads with an electronic function during operation of the component carrier 100, such as electrically coupling to other electrically conductive layer structures 104 of the stack 102. The density or number of components of the reinforcement structure 114 in the central portion 164 can be different than that in the peripheral portion 166. Alternatively, the density or number of components in the central portion 164 can be the same as the density or number of components in the peripheral portion 166. Thus, the reinforcement layer structure 114 can also be electrically coupled to at least one of the electrically conductive layer structures 104 for transmitting electrical signals and / or power during operation of the component carrier 100.

[0090] In particular, a first percentage of coverage with the material of the reinforcement layer structure 114 in a first surface region of the second major surface 110 overlapping the geometrically discontinuous region 112 at the first major surface 108 can deviate from or differ from a second percentage of coverage with the material of the at least one electrically conductive layer structure 104 in a second surface region of the second major surface 110 other than the first surface region, such as less than 50%, preferably 10%-20%. For example, the amount of copper used for reinforcement purposes in the central portion 164 of the lowermost electrically conductive layer structure 104 can be selected to be different from the amount of copper used for electrical connection purposes in the peripheral paths 166 of the lowermost electrically conductive layer structure 104. In addition to the amount of copper, the shape and / or size of the copper pattern can be designed differently. This allows for local adjustment of the copper content to optimize reinforcement and electrical functionality. However, the copper density below the cavity 116 can be less different from the copper density outside the cavity 116 to avoid warping caused by asymmetric structures.

[0091] Still referring to the multilayer stack 122, a via hole 168 may be formed (e.g., by laser drilling or mechanical drilling) through the electrically insulating layer structure 150 to expose elements of the lowermost electrically conductive layer structure 104 belonging to the peripheral portion 166. A surface treatment 170 (e.g., made of ENIG or ENEPIG) may be applied to the exposed surface of the electrically conductive layer structure 104. For example, the surface treatment 170 may form an electrical ground layer.

[0092] Referring now to the multilayer stack 124, electrically conductive connecting elements 172 may be applied to the exposed surface of the uppermost electrically conductive layer structure 104, which may also be exposed by forming access holes in the uppermost electrically insulating layer structure 150. For example, the electrically conductive connecting elements 172 may be solder bumps. Figure 1 , one or more surface-mounted components, such as electronic components, such as semiconductor chips, can be assembled on electrically conductive connecting element 172. The surface-mounted components can be interconnected via embedded electronic components 118, based on their function as a bridge wafer. Embedded electronic components 118 are externally accessible via copper laser vias and copper pads forming an electrically conductive layer structure 104 above the electronic components 118. As shown, the external electrically conductive layer structure 104, disposed externally from the inorganic layer structure 106 on its first major surface 108, can be disposed at a different vertical level than the electrically conductive pads 120 on the upper major surface of component 118.

[0093] Figure 2 A cross-sectional view 176 and a plan view 178 of a component carrier 100 according to an exemplary embodiment of the present invention are shown.

[0094] Figure 2 The structure and Figure 1The structure roughly corresponds to that of Figure 1 The central sub-stack 152. In addition, Figure 2 The figure shows how pressure applicator 178 applies pressure in direction 180 during wafer bonding of component 118 in cavity 116. During wafer bonding, a support plate 182 (e.g., made of metal) on the bottom side of stack 102 holds stack 102 in place. During the application of such force, the bottom of the glass core can be easily damaged, and warping 184 can occur in conventional methods. However, by providing a reinforcement layer structure 114 on second major surface 110 below geometrically discontinuous region 112 on first major surface 108 of the glass core, damage to the glass core can be avoided and warping 184 can be reduced.

[0095] As shown in FIG. 178 , the reinforcement structure 114 may be a matrix-like array of copper pads in the central portion 164 of the electrically conductive layer structure 104 on the second major surface 110 of the inorganic layer structure 106 .

[0096] Figure 3 The stress distribution on the plane of a component carrier 100 according to an exemplary embodiment of the present invention is shown compared to a conventional component carrier, as obtained from simulations.

[0097] More specifically, Figure 3 The stress distribution at the main surface 110 of the inorganic layered structure 106 without the reinforcement layer structure 114 is shown (see Figure 3 192) and the stress distribution at the main surface 110 of the inorganic layered structure 106 having the reinforcement layer structure 114 (see Figure 3 This comparison shows that 10 Newtons (see Figure 3 Left column 186), 20 Newtons (see Figure 3 The middle column 188) and 30 Newtons (see Figure 3 As can be seen, the provision of the reinforcement layer structure 114 significantly reduces the applied stress, especially the stress applied to the central portion of the main surface 110. More specifically, Figure 3 The out-of-plane deformation in millimeters after applying pressure under mold loading is shown. The glass core stress analysis shown shows that the risk of glass core failure due to wafer bonding forces can be significantly reduced by forming the reinforcement layer structure 114 in terms of stress / strain characteristics in the glass. Figure 3 , the effect of wafer bonding is represented by evaluating the effect of stress in the glass core on the three bonding forces mentioned above.

[0098] Figure 4Detail of a component carrier 100 according to an exemplary embodiment of the present invention is shown. More specifically, Figure 4 Critical areas 160 of the inorganic layer structure 106 are shown, which are particularly susceptible to damage in the event of mechanical stress and which can be reliably protected from damage by applying the reinforcing layer structure 114. The critical areas 160 include a first location 160a and a second location 160b, which will be Figure 6 Further detailed evaluation.

[0099] Figure 5 and Figure 6 Graphs 200, 210, 220, 230 and 240 are shown, illustrating simulation results of stresses acting on a component carrier 100 according to an exemplary embodiment of the present invention compared to a conventional component carrier. In particular, stress and strain results are shown in a glass material.

[0100] Reference Figure 5 200 in FIG, shows three cases where a wafer bonding force of 10 Newtons, 20 Newtons, and 30 Newtons is applied. The results are plotted for a conventional component carrier without a reinforcement layer structure (see reference numeral 202) and a component carrier 100 with a reinforcement layer structure 114 according to an exemplary embodiment of the present invention (see reference numeral 204). Figure 5 As shown, adding the reinforcement layer structure 114 can significantly reduce the absolute deflection d (unit: mm).

[0101] Now refer to Figure 6 , the graph 210 has a horizontal axis 212 representing the bonding force BF and a horizontal axis 213 representing Figure 4 The vertical coordinate 214 of the compressive stress CS at position 160a.

[0102] The graph 220 has an abscissa 212 representing the bonding force BF and an abscissa 213 representing Figure 4 The vertical coordinate 224 of the strain S at the position 160a.

[0103] The graph 230 has an abscissa 212 representing the bonding force BF and an abscissa 213 representing Figure 4 The ordinate 234 of the tensile stress TS at the center position 160b.

[0104] The graph 240 has an abscissa 212 representing the bonding force BF and an abscissa 213 representing Figure 4 The vertical coordinate 244 of the strain S at the center position 160b.

[0105] As shown in Figures 210, 220, 230, and 240, the results are better when the reinforcement layer structure 114 is present (see reference numeral 204) than when the reinforcement layer structure 114 is not present (see reference numeral 202).

[0106] Figure 7 1 shows a cross-sectional view of a component carrier 100 according to an exemplary embodiment of the present invention. Figure 7 As shown, mechanical stress may also be generated by laminating additional organic layer structures 150 (such as resin sheets or prepreg sheets) on the top and bottom of the inorganic layer structure 106 by heated press plates 196, 198. In this scenario as well, the reinforcement layer structure 114 relative to the geometrically discontinuous region 112 can protect the inorganic layer structure 106 from damage and can suppress warping.

[0107] Figure 8 1 shows a plan view of a component carrier 100 according to an exemplary embodiment of the present invention. More specifically, Figure 8 A plan view of the main surface 110 of the inorganic layer structure 106 is shown provided with a reinforcement layer structure 114. In the embodiment shown, the reinforcement layer structure 114 comprises a matrix arrangement of reinforcement pads 128 in a central portion 164, for example copper pads arranged in rows and columns.

[0108] Figure 9 A plan view of a component carrier 100 according to an exemplary embodiment of the invention is shown.

[0109] More specifically, Figure 9 A plan view of the major surface 110 of the inorganic layer structure 106 is shown provided with a reinforcement layer structure 114. In the embodiment shown, the reinforcement layer structure 114 comprises an array of parallel elongated reinforcement strips 126, such as parallel copper strips, arranged side by side in a central portion 164.

[0110] Figure 10 A cross-sectional view of a component carrier 100 according to another exemplary embodiment of the present invention is shown.

[0111] Figure 10 The implementation method and Figure 1 The embodiment of Figure 10 , the reinforcement layer structure 114 forms a continuous layer over the entire extension of the relatively geometrically discontinuous region 112. In addition, Figure 10 The geometrically discontinuous region 112 includes a protrusion 111 extending upward from the first main surface 108 outside the inorganic layer structure 106. The protrusion 111 may be a ring surrounding the cavity 116 into which the electronic component 118 is inserted. Figure 10In one embodiment, the reinforcement layer structure 114 is thermally coupled to the electronic component 118 via vertical through-connectors in the form of an electrically conductive layer structure 104, which may be made of copper. Alternatively, multiple vertical through-connectors may connect to the backside of the electronic component 118. This allows for the use of a chip with both front- and back-side connections. Thus, heat generated by the electronic component 118 during operation of the component carrier 100 can be dissipated through the vertical through-connectors and the reinforcement layer structure 114, thereby facilitating heat dissipation.

[0112] Figures 11 to 13 The bottom main surface 110 of a stack 102 of a component carrier 100 with a reinforcement layer structure 114 according to various exemplary embodiments of the present invention is shown.

[0113] refer to Figure 11 , the reinforcement layer structure 114 includes only one large spacer covering the entire middle area. Therefore, a single continuous structure can constitute the reinforcement layer structure 114 in the area opposite to the geometrically discontinuous area 112 on the opposite side of the stack 102.

[0114] refer to Figure 12 , the reinforcement layer structure 114 comprises a ring-shaped metal structure. Alternatively, the reinforcement layer structure 114 comprises a plurality (e.g., four) square pads surrounding a plurality (e.g., four) edges of a central portion. Thus, one or more rings may constitute the reinforcement layer structure 114 in the region of the geometrically discontinuous region 112 on the opposite side of the stack 102.

[0115] Reference Figure 13 , the reinforcement layer structure 114 includes a plurality of (eg, four) pads located at a plurality of (eg, four) corners of the central portion and / or at least one pad located in the center of the plurality of pads.

[0116] Thus, a plurality of central and peripheral pads may constitute a reinforcement layer structure 114 in a region opposite the geometrically discontinuous region 112 on the opposite side of the ply stack 102 .

[0117] Generally, the reinforcement layer structure 114 can have many different designs depending on the specific application and the pressure it needs to withstand (eg, the design of the reinforcement layer structure 114 can be calculated based on the pressure it needs to withstand).

[0118] It should be noted that the term "comprising" does not exclude other elements or steps, and "a" or "the" does not exclude a plurality. Furthermore, elements described in association with different embodiments may be combined.

[0119] It should also be noted that reference signs in the claims shall not be construed as limiting the scope of the claims.

[0120] The implementation of the invention is not limited to the preferred embodiments shown in the drawings and described above. On the contrary, the solutions shown and various modifications according to the principle of the invention can be used even in the case of fundamentally different embodiments.

Claims

1. A component carrier (100), comprising: A stack (102), the stack (102) comprising at least one electrically conductive layer structure (104) and at least one inorganic layer structure (106), wherein at least one of the inorganic layer structures (106) has a planar first major surface (108) and an opposite planar second major surface (110); a geometrically discontinuous region (112) at the first major surface (108); and A reinforcement layer structure (114) at the second major surface (110), wherein the reinforcement layer structure (114) at least partially overlaps the geometrically discontinuous region (112) in a lateral direction.

2. The component carrier (100) according to claim 1, wherein The geometrically discontinuous region (112) includes a cavity (116) extending from the first major surface (108) into at least one of the inorganic layer structures (106).

3. The component carrier (100) according to claim 2, wherein The component carrier (100) comprises at least one component (118) at least partially accommodated in a cavity (116), for example, the component (118) is a bridge wafer.

4. The component carrier (100) according to claim 3, wherein An outer one of the at least one electrically conductive layer structures (104) is arranged on the first main surface (108) and at another vertical level than the electrically conductive pads (120) at the upper main surface of the component (118).

5. The component carrier (100) according to claim 1, wherein The geometrically discontinuous region (112) includes a protrusion (111) extending upward from the first major surface (108) beyond at least one of the inorganic layer structures (106).

6. The component carrier (100) according to any one of claims 1 to 5, wherein The reinforcement layer structure (114) is arranged on the second main surface (110).

7. The component carrier (100) according to any one of claims 1 to 6, wherein The reinforcement layer structure (114) is electrically conductive, for example, the reinforcement layer structure (114) forms part of at least one of the electrically conductive layer structures (104).

8. The component carrier (100) according to any one of claims 1 to 7, wherein At least a portion of the electrically conductive layer structure (104) is formed separate from the reinforcement layer structure (114).

9. The component carrier (100) according to any one of claims 1 to 8, wherein The reinforcement layer structure (114) forms traces and / or pads, for example the reinforcement layer structure (114) is a pattern forming traces and / or pads.

10. The component carrier (100) according to any one of claims 1 to 9, wherein The reinforcement layer structure (114) is formed as a continuous structure, for example, the reinforcement layer structure (114) is formed as a continuous layer.

11. The component carrier (100) according to any one of claims 1 to 10, wherein The reinforcing layer structure (114) extends transversely across the entire geometrically discontinuous region (112), for example, the reinforcing layer structure (114) is transversely aligned with the entire geometrically discontinuous region (112).

12. The component carrier (100) according to any one of claims 1 to 11, wherein The reinforcement layer structure (114) extends transversely over at least a portion of a boundary contour of the geometrically discontinuous area (112), wherein the boundary contour is formed, for example, by edge and / or corner portions of the geometrically discontinuous area (112).

13. The component carrier (100) according to any one of claims 1 to 12, wherein The reinforcement layer structure (114) is inorganic and / or electrically insulating, for example the reinforcement layer structure (114) forms part of at least one of the inorganic layer structures (106).

14. The component carrier (100) according to any one of claims 1 to 13, wherein The component carrier (100) comprises at least one of the following features: wherein the reinforcement layer structure (114) is constructed and connected to the stack (102) for heat dissipation; The reinforcement layer structure (114) is electrically connected to at least one of the electrically conductive layer structures (104), for example, to transmit electrical signals and / or power.

15. The component carrier (100) according to any one of claims 1 to 14, wherein The component carrier (100) comprises at least one of the following features: wherein the reinforcement layer structure (114) is functionally inactive except for the reinforcement function of the reinforcement layer structure (114); The reinforcement layer structure (114) is electrically decoupled from at least one of the electrically conductive layer structures (104).

16. The component carrier (100) according to any one of claims 1 to 15, wherein At least one of the inorganic layer structures (106) forms the core of the stack (102).

17. The component carrier (100) according to any one of claims 1 to 16, wherein At least one of the inorganic layer structures (106) comprises or consists of at least one of the following: glass, ceramic, semiconductor, for example silicon, and silicon dioxide.

18. The component carrier (100) according to any one of claims 1 to 17, wherein The reinforcement layer structure (114) has a bearing capacity of at least 40 Newtons.

19. The component carrier (100) according to any one of claims 1 to 18, wherein At least 50% of the surface area of ​​the second main surface (110) that overlaps with the surface area of ​​the geometrically discontinuous area (112) at the first main surface (108) is covered by the material of the reinforcement layer structure (114), for example, 60% to 80% of the surface area of ​​the second main surface (110) that overlaps with the surface area of ​​the geometrically discontinuous area (112) at the first main surface (108) is covered by the material of the reinforcement layer structure (114).

20. The component carrier (100) according to any one of claims 1 to 19, wherein A first percentage of coverage with material of the reinforcing layer structure (114) in a first surface area of ​​the second major surface (110) overlapping with the surface area of ​​the geometrically discontinuous area (112) at the first major surface (108) deviates from a second percentage of coverage with material of at least one of the electrically conductive layer structures (104) in a second surface area of ​​the second major surface (110) other than the first surface area by no more than 20%, such as no more than 10%.

21. The component carrier (100) according to any one of claims 1 to 20, wherein The thickness (D) of at least one of the inorganic layer structures (106) is not greater than 500 μm, for example, the thickness (D) of at least one of the inorganic layer structures (106) is not greater than 200 μm.

22. The component carrier (100) according to any one of claims 1 to 21, wherein The component carrier (100) comprises at least one layer stack (122, 124) comprising an organic material and formed on the first main surface (108) and / or the second main surface (110).

23. The component carrier (100) according to any one of claims 1 to 22, wherein At least one of the electrically conductive layer structures (104) comprises at least one vertical through-connector (132) extending over the entire thickness (D) of at least one of the inorganic layer structures (106).

24. The component carrier (100) according to any one of claims 1 to 23, wherein The reinforcement layer structure (114) includes a matrix-like arrangement of reinforcement mats (128).

25. The component carrier (100) according to any one of claims 1 to 24, wherein The reinforcement layer structure (114) includes an array of reinforcement strips (126) arranged side by side.

26. A method of manufacturing a component carrier (100), wherein: The method comprises: Providing a stack (102), the stack (102) comprising at least one electrically conductive layer structure (104) and at least one inorganic layer structure (106), wherein at least one of the inorganic layer structures (106) has a planar first major surface (108) and an opposite planar second major surface (110); forming a geometrically discontinuous region (112) at the first major surface (108); and A reinforcement layer structure (114) is formed at the second main surface (110), wherein the reinforcement layer structure (114) at least partially overlaps the geometrically discontinuous region (112) in a lateral direction.

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