Manufacturing method of nanoprobe and nanoprobe

Abstract

The invention relates to the technical field of probe manufacturing, and provides a manufacturing method of a nanoprobe and the nanoprobe. The method comprises the following steps: obtaining a nanoprobe raw material, and then carrying out electrolytic polishing treatment on one end of the nanoprobe raw material to obtain an initial nanoprobe; and placing one end of the tip of the initial nanoprobe at the circle center position of the concentric circular ion beam etching pattern, and performing ion beam etching on the tip of the initial nanoprobe by using the concentric circular ion beam etching pattern through an ion beam to obtain the nanoprobe. According to the method, the cylindrical nano-probe raw material is roughly machined through the electrolytic polishing technology, the initial nano-probe with the initial tip morphology is formed, the follow-up machining difficulty is reduced, then the ion beam etching mode with the concentric circular ion beam etching pattern is adopted, and the preparation efficiency of the nano-probe is improved.

Description

Technical Field

[0001] The present application relates to the field of probe manufacturing technology, and in particular to a method for manufacturing a nanoprobe and a nanoprobe. Background Art

[0002] As chip manufacturing technology continues to evolve, accurate, microscopic analysis of chip materials is becoming increasingly critical. Nanoprobes, as tools capable of detecting and analyzing materials at the nanoscale, have demonstrated their irreplaceable and important role in the field of chip material analysis.

[0003] In existing nanoprobe production processes, chemical vapor deposition (CVD) is used to grow nanoprobe structures on the surface of a substrate. Probe growth is controlled by adjusting parameters such as the reaction gas flow rate and temperature. However, due to uneven gas diffusion and temperature fluctuations during the reaction, as well as the lack of real-time monitoring and precise control methods, precise control of the nanoprobe's size, shape, and tip curvature is difficult, resulting in uncertainties in the accuracy of the prepared nanoprobes. Summary of the Invention

[0004] In view of this, embodiments of the present application provide a method for manufacturing a nanoprobe and a nanoprobe to solve the problem of low precision in preparing nanoprobes in the prior art.

[0005] According to a first aspect of an embodiment of the present application, a method for manufacturing a nanoprobe is provided, which includes: obtaining a nanoprobe raw material, which is cylindrical; performing electrolytic polishing on one end of the nanoprobe raw material to electropolish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe; placing one end of the needle tip of the initial nanoprobe at the center of a concentric circular ion beam etching pattern, and performing ion beam etching on the needle tip of the initial nanoprobe using an ion beam in a concentric circular ion beam etching pattern to obtain a nanoprobe.

[0006] According to a second aspect of the embodiments of the present application, a nanoprobe is provided. The nanoprobe is manufactured according to the above-mentioned method for manufacturing the nanoprobe.

[0007] According to a third aspect of an embodiment of the present application, a device for manufacturing a nanoprobe is provided, which includes: an acquisition module for acquiring a nanoprobe raw material, which is cylindrical; a polishing module for performing electrolytic polishing on one end of the nanoprobe raw material to electropolish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe; and an etching module for placing one end of the needle tip of the initial nanoprobe at the center position of a concentric circular ion beam etching pattern, and performing ion beam etching on the needle tip of the initial nanoprobe using an ion beam in a concentric circular ion beam etching pattern to obtain a nanoprobe.

[0008] According to a fourth aspect of an embodiment of the present application, an electronic device is provided, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above method when executing the computer program.

[0009] According to a fifth aspect of the embodiments of the present application, a computer-readable storage medium is provided, which stores a computer program. When the computer program is executed by a processor, the steps of the above method are implemented.

[0010] The beneficial effects of the embodiments of the present application compared with the prior art are as follows: the method for making the nanoprobe in the embodiments of the present application first obtains a nanoprobe raw material, and then electropolishes one end of the nanoprobe raw material to electropolish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe; the needle tip end of the initial nanoprobe is placed at the center position of a concentric circular ion beam etching pattern, and the needle tip of the initial nanoprobe is ion beam etched by an ion beam in a concentric circular ion beam etching pattern to obtain a nanoprobe. The present application first rough-processes the cylindrical nanoprobe raw material through an electropolishing process to form an initial nanoprobe with an initial needle tip morphology, and then uses an ion beam etching method with a concentric circular ion beam etching pattern to perform directionally fine etching on the needle tip area of ​​the initial nanoprobe, so that the needle tip morphology has a high degree of symmetry and structural stability at the nanoscale, effectively improving the accuracy and molding consistency of the needle tip, and finally obtaining a nanoprobe with high morphological accuracy and excellent functional performance, avoiding the problem of low precision in preparing nanoprobes in related technologies. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0012] Figure 1 This is a schematic flow chart of a method for making a nanoprobe provided in an application example;

[0013] Figure 2 This is a schematic flow chart of another method for making a nanoprobe provided in an embodiment of the present application;

[0014] Figure 3 This is a schematic diagram of a concentric circular ion beam etching pattern provided in an embodiment of the present application, in which the inner diameter is not zero;

[0015] Figure 4This is a schematic diagram of an embodiment of the present application providing a first stage after an ion beam etches an initial nanoprobe;

[0016] Figure 5 This is a schematic diagram of an embodiment of the present application after an ion beam etches an initial nanoprobe in the second stage;

[0017] Figure 6 This is a schematic diagram of an embodiment of the present application after an ion beam etches an initial nanoprobe in the third stage;

[0018] Figure 7 This is a schematic diagram of an embodiment of the present application after an ion beam etches an initial nanoprobe during a cleaning phase;

[0019] Figure 8 is a schematic diagram of electrolytic polishing of an initial nanoprobe provided in an embodiment of the present application;

[0020] Figure 9 This is a schematic structural diagram of a nanoprobe fabrication device provided in an embodiment of the present application;

[0021] Figure 10 This is a structural diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0022] In the following description, specific details such as specific system structures and techniques are provided for purposes of illustration rather than limitation to facilitate a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid obscuring the description of the present application with unnecessary detail.

[0023] A method and apparatus for manufacturing a nanoprobe according to an embodiment of the present application will be described in detail below with reference to the accompanying drawings.

[0024] Figure 1 This is a schematic diagram of a method for making a nanoprobe provided in an embodiment of the present application. Figure 1 As shown, the method for making the nanoprobe includes:

[0025] S101, obtaining a nanoprobe raw material, the nanoprobe raw material is cylindrical;

[0026] S102, performing electrolytic polishing on one end of the nanoprobe raw material to electrolytically polish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe;

[0027] S103 , placing one end of the tip of the initial nanoprobe at the center of a concentric circular ion beam etching pattern, and performing ion beam etching on the tip of the initial nanoprobe using an ion beam in a concentric circular ion beam etching pattern to obtain a nanoprobe.

[0028] It can be understood that the present application first obtains the nanoprobe raw material, and then performs electrolytic polishing on one end of the nanoprobe raw material to achieve rough processing of the nanoprobe raw material to obtain the initial nanoprobe, and then uses an ion beam etching method with a concentric circular ion beam etching pattern to perform directionally fine etching on the tip area of ​​the initial nanoprobe, which effectively improves the accuracy and molding consistency of the tip, and finally obtains a nanoprobe with high morphological accuracy and excellent functional performance, avoiding the problem of low precision in preparing nanoprobes in related technologies.

[0029] In addition, the present application performs rough processing on the cylindrical nanoprobe raw material through an electrolytic polishing process, and then performs ion beam etching, which reduces the difficulty of ion beam etching and thereby improves the preparation efficiency of the nanoprobe, avoiding the problem of low preparation efficiency caused by directly etching the nanoprobe raw material through ion beam to obtain the nanoprobe.

[0030] Based on the above reasons, the present application will obtain a cylindrical nanoprobe raw material, the length of which ranges from 10 millimeters (mm) to 30 mm, preferably, the length of the nanoprobe raw material is 20 mm, and the diameter of the cylindrical nanoprobe raw material ranges from 0.2 mm to 0.8 mm, preferably, the diameter of the cylindrical nanoprobe raw material is 0.55 mm. In addition, the material of the nanoprobe raw material includes but is not limited to: tungsten, silicon, molybdenum, gold-coated tungsten, and graphene. For better explanation, the material of the nanoprobe raw material will be described as tungsten.

[0031] In some examples, the present application will perform electrolytic polishing on one end of the nanoprobe raw material to electropolish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe, thereby achieving rough processing of the nanoprobe raw material; specifically, taking tungsten as an example of the material of the nanoprobe raw material, the present application uses alcohol to rinse and wipes the gold ring with dust-free paper (the gold ring refers to a metal bracket / electrode bracket with a ring groove, which is used to load the electrochemical corrosion solution and constitute a part of the electrolytic circuit. Its main function is to serve as a structural support for the cathode (negative electrode) or electrolyte container (hold), drip 5% NaOH solution into the gold ring, insert one end of the nanoprobe raw material (that is, vertically) into the 5% NaOH solution, and adjust the position of the nanoprobe raw material in the 5% NaOH solution so that an etching platform (waist) appears 5mm away from the end of the nanoprobe raw material. Apply AC power (1-5V), with the positive terminal of the power supply connected to the nanoprobe raw material and the negative terminal to the gold ring. In the NaOH solution, the current flows from the nanoprobe raw material to the gold ring, causing anodic dissolution, and the end of the nanoprobe raw material placed in the 5% NaOH solution is corroded and polished. The power is applied for a period of time. The reaction voltage, current, and reaction time are adjusted during the electrolytic polishing process. In the final stage of electrolytic polishing, the nanoprobe raw material is quickly pulled away from the gold ring while electrochemical polishing is carried out. Repeat this process multiple times until it breaks, leaving a new needle tip of the tungsten wire at the etching platform position. Until the diameter reaches tens of microns within 0-5um from the needle tip surface, the initial nanoprobe is obtained.

[0032] In some examples, after obtaining the initial nanoprobe, the present application places one end of the tip of the initial nanoprobe at the center of a concentric circular ion beam etching pattern, and performs ion beam etching on the tip of the initial nanoprobe using an ion beam in a concentric circular ion beam etching pattern to obtain a nanoprobe, thereby achieving fine processing of the initial nanoprobe.

[0033] Specifically, the present application places the initial nanoprobe into a focused ion beam carrier, adjusts the position of the initial nanoprobe so that the tip of the initial nanoprobe is perpendicular to the ion beam etching direction, and the center of one end of the tip of the initial nanoprobe coincides with the center of the concentric circular ion beam etching pattern, and then etches (bombards) the tip of the initial nanoprobe by the ion beam to obtain the final nanoprobe.

[0034] According to the technical solution provided in the embodiment of the present application, the method for making a nanoprobe includes: first obtaining a nanoprobe raw material, and then electropolishing one end of the nanoprobe raw material to electropolish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe; placing the needle tip end of the initial nanoprobe at the center position of a concentric circular ion beam etching pattern, and ion beam etching the needle tip of the initial nanoprobe with a concentric circular ion beam etching pattern to obtain a nanoprobe. The present application first rough-processes the cylindrical nanoprobe raw material through an electropolishing process to form an initial nanoprobe with an initial needle tip morphology, and then Then, an ion beam etching method with a concentric circular ion beam etching pattern was used to perform directionally fine etching on the tip area of ​​the initial nanoprobe, so that the tip morphology has high symmetry and structural stability at the nanoscale, effectively improving the accuracy and molding consistency of the tip, and finally obtaining a nanoprobe with high morphological accuracy and excellent functional performance, avoiding the problem of low precision in the preparation of nanoprobes in related technologies. In addition, the cylindrical nanoprobe raw material was rough-processed through an electrolytic polishing process, thereby improving the preparation efficiency of the nanoprobe, avoiding the problem of low preparation efficiency caused by directly etching the nanoprobe raw material through an ion beam to obtain the nanoprobe.

[0035] In some examples, such as Figure 2 As shown, the tip of the initial nanoprobe is ion-beam etched by an ion beam in a concentric circular ion beam etching pattern to obtain a nanoprobe, including:

[0036] S201, setting the outer diameter and inner diameter of the concentric circular ion beam etching pattern;

[0037] S202, etching one end of the tip of the initial nanoprobe by using an ion beam to form a concentric circular ion beam etching pattern;

[0038] S203. After etching the tip of the initial nanoprobe to the desired size corresponding to the outer diameter and inner diameter, reset the outer diameter and inner diameter of the concentric circular ion beam etching pattern, and etch one end of the tip of the initial nanoprobe until a nanoprobe is obtained. The outer diameter and inner diameter of the reset concentric circular ion beam etching pattern are lower than the outer diameter and inner diameter of the concentric circular ion beam etching pattern before the reset.

[0039] In some examples, in order to improve the etching accuracy during ion beam etching of the tip of the initial nanoprobe and obtain a high-precision nanoprobe, the present application will set the size of the concentric circular ion beam etching pattern in stages (that is, adjust the size of the inner diameter and outer diameter of the concentric circular ion beam etching pattern).

[0040] It is understandable that relevant personnel can flexibly set the inner diameter and outer diameter of the concentric circular ion beam etching pattern at different stages according to actual needs. For example, the inner diameter and outer diameter of the concentric circular ion beam etching pattern at different stages are shown in Table 1 below:

[0041] Table 1: Inner and outer diameters of concentric circular ion beam etching patterns at different stages

[0042] Magnification (KX) 10 20 30 50 65 80 First inner diameter (nm) 4000 2000 1350 800 610 515 Second inner diameter (nm) 1700 850 550 330 250 200 Outer diameter (nm) 12000 6000 4000 2400 1800 1500

[0043] As shown in Table 1 above, in the first stage, the outer diameter of the concentric circular ion beam etching pattern is set to 12000nm and the inner diameter is set to 4000nm. In the second stage, the outer diameter of the concentric circular ion beam etching pattern is set to 6000nm and the inner diameter is set to 2000nm. By analogy, in the sixth stage, the outer diameter of the concentric circular ion beam etching pattern is set to 1500nm and the inner diameter is set to 515nm. Figure 3 As shown, Figure 3 The figure shows a schematic diagram showing that the inner diameter of the concentric circular ion beam etching pattern is not zero.

[0044] Taking Table 1 above as an example, in step S202, the present application first sets the outer diameter of the concentric circular ion beam etching pattern to 12000nm and the inner diameter to 4000nm in the first stage, and then etches one end of the tip of the initial nanoprobe using an ion beam with a concentric circular ion beam etching pattern (the etching time is 2 to 6 minutes, and the relevant personnel can flexibly set the etching time according to actual conditions); when the tip of the initial nanoprobe is etched to the expected size corresponding to the outer diameter and inner diameter (the expected size is the size corresponding to the inner diameter and outer diameter set in advance by the relevant personnel), enter the second stage, set the outer diameter of the concentric circular ion beam etching pattern to 6000nm and the inner diameter to 2000nm... and so on, until the final nanoprobe is obtained; it can be understood that in this process, the outer diameter and inner diameter of the reset concentric circular ion beam etching pattern are lower than the outer diameter and inner diameter of the concentric circular ion beam etching pattern before the reset, and the inner diameter is not zero.

[0045] It can be understood that, during this process, the outer diameter and inner diameter of the reset concentric circular ion beam etching pattern are lower than the outer diameter and inner diameter of the concentric circular ion beam etching pattern before reset, and the inner diameter is not zero.

[0046] It can be understood that the etching time of each stage can be flexibly set by relevant personnel according to actual needs. The later the etching stage, the lower the lower limit of the etching time and the lower the upper limit. Taking three stages as an example, the etching time of the first stage is 2 to 6 minutes, the etching time of the second stage is 1-4 minutes, and the etching time of the third stage is 0.5 to 3 minutes.

[0047] It can be understood that, in the process of etching the tip end of the initial nanoprobe by using an ion beam to etch a concentric circular ion beam pattern in step S203, the size of the inner diameter can also be modified, thereby making the etching of the tip end of the initial nanoprobe more precise; for example, as shown in Table 1, in the first stage, the present application sets the outer diameter of the concentric circular ion beam etching pattern to 12000nm and the inner diameter to 4000nm, and then etches the tip end of the initial nanoprobe by using an ion beam to etch a concentric circular ion beam pattern. During the etching process, the inner diameter of the concentric circular ion beam etching pattern is set to 1700nm, and the outer diameter does not change; in the second stage, The outer diameter of the concentric circular ion beam etching pattern is 6000nm and the inner diameter is 2000nm, and then the tip end of the initial nanoprobe is etched by the ion beam using the concentric circular ion beam etching pattern. During the etching process, the inner diameter of the concentric circular ion beam etching pattern is set to 850nm, and the outer diameter does not change... Similarly, in the sixth stage, the outer diameter of the concentric circular ion beam etching pattern is set to 1500nm and the inner diameter is 515nm, and then the tip end of the initial nanoprobe is etched by the ion beam using the concentric circular ion beam etching pattern. During the etching process, the inner diameter of the concentric circular ion beam etching pattern is set to 200nm, and the outer diameter does not change.

[0048] It can be understood that in step S203, the tip end of the initial nanoprobe is etched by using an ion beam to form a concentric circular ion beam etching pattern, and it also includes: determining the beam conditions corresponding to the ion beam (the beam conditions include ion beam current and ion beam acceleration voltage), and controlling the ion beam to form a concentric circular ion beam etching pattern according to the determined beam conditions to etch the tip end of the initial nanoprobe; it can be understood that each stage (each time the outer diameter and inner diameter of the concentric circular ion beam etching pattern are set as a stage) corresponds to a beam condition, and relevant personnel can flexibly set the beam conditions corresponding to each stage according to actual needs.

[0049] In some examples, in order to obtain the size of the initial nanoprobe tip, the present application can also observe the size of the initial nanoprobe tip through an electron beam; the magnification of the electron beam can be flexibly set by relevant personnel according to actual needs, and the magnification of the electron beam corresponding to different stages (under different outer and inner diameters of concentric circular ion beam etching patterns) can be different or the same. For example, as shown in Table 1, the magnification of the electron beam in the first stage is 10kx, that is, the magnification of the image or processing area is 10,000 times, the magnification of the electron beam in the second stage is 20kx, that is, the magnification of the image or processing area is 20,000 times... The magnification of the electron beam in the sixth stage is 80kx, that is, the magnification of the image or processing area is 80,000 times.

[0050] In order to better understand the above steps, this application provides a more specific example for illustration.

[0051] In this example, in order to improve the accuracy of FIB etching of nanoprobes, concentric circular ion beam etching patterns with different concentric circle diameters are set at different stages.

[0052] In the first stage, the focused electron beam of the present invention is set to 15kX to 25kX, the focused ion beam is set to the beam condition of 0.28nA@30kV, the outer diameter of the concentric circular ion beam etching pattern is set to 12000nm, and the inner diameter is set to 4000nm. The concentric circular ion beam etching pattern is placed at a position where its center coincides with the center of the initial nanoprobe tip, and a cylindrical downward pressure etching operation is performed. The ion beam etches the tip of the initial nanoprobe for 2-6 minutes, and the pattern after etching is as follows. Figure 4 shown.

[0053] The focused electron beam is set to 15kX to 25kX, which means the magnification of the image or processing area is 15,000x to 25,000x. High magnification is used to observe or process tiny areas (such as nanoscale structures). The higher the value, the smaller the field of view but the clearer the details.

[0054] The focused ion beam was set to a beam current of 0.28nA at 30kV. The lower the current, the higher the machining precision (but slower the speed), making it suitable for fine etching or imaging. The 30kV ion beam acceleration voltage is 30 kilovolts (kV). Higher voltages increase ion energy, enhancing etching efficiency and imaging contrast.

[0055] In the second stage, the focused electron beam is set to 15kX to 25kX, the focused ion beam is set to the beam condition of 0.28nA@30kV, the outer diameter of the concentric circular ion beam etching pattern is set to 6000nm, the inner diameter of the concentric circular ion beam etching pattern is set to 3000nm, and the concentric circular ion beam etching pattern is placed at a position where its center coincides with the center of the initial nanoprobe tip. The initial tip forming etching operation is performed at 15kX to 25kX and 0.28nA@30kV. The ion beam etches the sample for 1-4 minutes. The tip is conical and the tip is about 2700nm thick. The sample after etching is as follows Figure 5 shown.

[0056] In the third stage, the focused electron beam is set to 50kX to 70kX, the focused ion beam is set to the beam condition of 90pA@30kV, the outer diameter of the concentric circular ion beam etching pattern is set to 2400nm, the inner diameter of the concentric circular ion beam etching pattern is set to 600nm, and the concentric circular ion beam etching pattern is placed at a position where its center coincides with the center of the initial nanoprobe tip. The final tip forming etching operation is performed at 50kX to 70kX and 28pA@30kV. The ion beam etches the sample for 0.5-3 minutes. The tip is conical and the tip is about 400nm thick. The shorter the milling time, the larger the half-shank angle. The sample after etching is as follows Figure 6 shown.

[0057] When the tip of the initial nanoprobe after etching meets the target size, the present application sets the focused electron beam to 15kX to 25kX and the beam current condition to 47pA@5kV, and performs low voltage cleaning and forming etching operation, and the inner diameter is set to 0, that is, the inner diameter of the probe tip, pipe or structure is close to the theoretical minimum value. Figure 7 This step not only removes gallium damage left on the tip by the previous etching and milling steps, but also slightly refines the tip shape.

[0058] According to the technical solution provided in the embodiment of the present application, the outer diameter and inner diameter of the concentric circular ion beam etching pattern are set; the tip end of the initial nanoprobe is etched by an ion beam using a concentric circular ion beam etching pattern; after the tip of the initial nanoprobe is etched to the desired size corresponding to the outer diameter and inner diameter, the outer diameter and inner diameter of the concentric circular ion beam etching pattern are reset, and the tip end of the initial nanoprobe is etched until a nanoprobe is obtained. The above steps realize the staged etching of the tip of the initial nanoprobe, thereby improving the accuracy of the final nanoprobe.

[0059] In some examples, the outer diameter and inner diameter of the concentric circular ion beam etching pattern are reset, and one end of the tip of the initial nanoprobe is etched until the nanoprobe is obtained, including: resetting the outer diameter and inner diameter of the concentric circular ion beam etching pattern, and etching one end of the tip of the initial nanoprobe; when the tip of the initial nanoprobe after etching meets the target size, setting the inner diameter of the concentric circular ion beam etching pattern to zero, and cleaning the tip of the initial nanoprobe that meets the target size through the concentric circular ion beam etching pattern with an inner diameter of zero to obtain the nanoprobe.

[0060] It is understandable that in the process of resetting the outer diameter and inner diameter and continuously etching to obtain the target size, the tip of the initial nanoprobe may be damaged to a certain extent. In order to clear the damage caused in the above process, this application will set the inner diameter of the concentric circular ion beam etching pattern to zero when the tip of the initial nanoprobe after etching meets the target size, and clean and fine-tune the tip of the initial nanoprobe that meets the target size through the concentric circular ion beam etching pattern with an inner diameter of zero to obtain a nanoprobe.

[0061] In some examples, in order to ensure that the outer diameter and inner diameter of the concentric circular ion beam etching pattern are reset, the tip of the initial nanoprobe is always at the center of the concentric circular ion beam etching pattern during the etching process. After resetting the outer diameter and inner diameter of the concentric circular ion beam etching pattern, the method of the present application further includes: re-placing the tip of the initial nanoprobe at the center of the concentric circular ion beam etching pattern. Through the above steps, it is possible to ensure that the tip of the initial nanoprobe is always at the center of the beam symmetry during the etching process, thereby improving the uniformity and accuracy of the etching and avoiding irregular tip morphology or dimensional errors due to position offset.

[0062] In some examples, in order to ensure that the electron beam can accurately observe the tip of the initial nanoprobe, the present application also needs to place the tip of the initial nanoprobe at the focal position of the electron beam. Similarly, in order to ensure the etching effect of the ion beam on the tip of the initial nanoprobe, the present application also needs to place the tip of the initial nanoprobe at the focal position of the ion beam, and in order to ensure that the ion beam can etch patterns with concentric circular ion beams, the present application also needs to make the center position of one end of the tip of the initial nanoprobe the same as the center position of the concentric circular ion beam etching pattern. Based on the above reasons, placing one end of the tip of the initial nanoprobe at the center position of the concentric circular ion beam etching pattern includes: searching for the common focal position of the ion beam and electron beam corresponding to the concentric circular ion beam etching pattern at the center position of the concentric circular ion beam etching pattern; and placing one end of the tip of the initial nanoprobe at the common focal position.

[0063] In some examples, before obtaining the nanoprobe by ion beam etching the tip of the initial nanoprobe using the concentric circular ion beam etching pattern, the method further includes: setting the etching direction of the ion beam etching of the tip of the initial nanoprobe to be from the outer diameter of the concentric circular ion beam etching pattern to the inner diameter of the concentric circular ion beam etching pattern (i.e., etching from the outside to the inside), such as Figure 3As shown, the effect of reducing the anti-deposition effect is achieved. Specifically, if etching is performed from the inside to the outside (that is, from the inner diameter of the concentric circular ion beam etching pattern to the outer diameter of the concentric circular ion beam etching pattern), the etching near the central area (that is, the needle tip) will be carried out first, and the etched material will diffuse outward, with a high probability of redepositing in the peripheral area, especially the outer part that has not been etched. When etching from the outside to the inside, the outer layer of material is removed first, and the external space is more "open", making it difficult for particles to attach to the internal area; when the etching advances to the center, the surrounding area has been fully cleared, and the probability of anti-deposition is significantly reduced.

[0064] In some examples, relevant personnel can flexibly set the etching direction of ion beam etching on the tip of the initial nanoprobe according to actual needs. For example, the etching direction of ion beam etching on the tip of the initial nanoprobe is set from the inner diameter of the concentric circular ion beam etching pattern to the outer diameter of the concentric circular ion beam etching pattern.

[0065] It can be understood that in order to make the final nanoprobe match the nanoprobe machine, the present application also needs to obtain the probe shape corresponding to the nanoprobe machine during the process of making the nanoprobe; according to the probe shape corresponding to the nanoprobe machine, the initial nanoprobe is bent so that the shape of the initial nanoprobe matches the probe shape corresponding to the nanoprobe machine, and then after the final nanoprobe is obtained, the nanoprobe machine can directly use the nanoprobe.

[0066] For example, the nanoprobe machine uses a nanoprobe with a 150° angle. The present application uses pliers to bend the initial nanoprobe into a 150° angle, which is the same shape as the probe used by the nanoprobe machine. The initial nanoprobe is then placed in a focused ion beam carrier, and the carrier is adjusted so that the tip of the initial nanoprobe is located at the common focal point of the ion beam and the electron beam.

[0067] In some examples, one end of the nanoprobe raw material is electropolished to transform the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe, including: determining an etching position on the nanoprobe raw material; and placing one end of the nanoprobe raw material in a pre-set electrochemical corrosion solution based on the etching position and performing electropolishing in stages to obtain an initial nanoprobe.

[0068] It can be understood that, taking tungsten as an example, in order to ensure the accuracy of the target size of the initial nanoprobe obtained by electrolytic polishing, the reaction time of inserting one end of the nanoprobe raw material into the 5% NaOH solution, the voltage value of the alternating current, and the observation of the nanoprobe raw material after each reaction under an optical microscope are controlled to make the target size of the initial nanoprobe tip diameter 80um±20%, such as Figure 8As shown, it specifically includes the following steps:

[0069] S21: Use 5V AC power for 180s. During the power-on process, place one end of the nanoprobe raw material 5mm away from the tip (this position is the pre-set etching position) in a 5% NaOH solution and move it up and down within a range of about 3mm. After the reaction is completed, an etching platform appears. Rinse the gold ring with alcohol and wipe off any residual liquid on the gold ring with dust-free paper.

[0070] S22: Use 2-3V AC power for 60 to 90 seconds, place the etching platform at one end of the nanoprobe raw material in the polishing solution, and quickly move the nanoprobe raw material up and down. The moving range is about 5 mm from the center of the etching platform to the end of one end of the nanoprobe raw material. This process will shape the overall taper of the needle tip.

[0071] S23: Use 5V AC power for 30 seconds. During the power-on process, place the center of the etching platform to the tip of the nanoprobe raw material in the polishing solution. After polishing for a period of time, the tungsten wire from the center of the etching platform to the needle tip will become significantly thinner, making it easier to pull it off later.

[0072] S24: Use 1V AC power for 90s, place the center of the etching platform in the polishing solution, and quickly pull the tungsten wire away from the gold ring during the power-on process. Repeat this process several times until it breaks to the target size 4. The tungsten wire leaves a new needle tip at the etching platform. At this time, the needle tip diameter can reach the target size 4, that is, 80um±20%.

[0073] It is understood that when the nanoprobe material is tungsten, the electrochemical etching solution is a 5% sodium hydroxide solution. Relevant personnel can flexibly set the electrochemical etching solution according to the nanoprobe material, and no further details are given here.

[0074] The present application also provides a nanoprobe, which is produced using the nanoprobe production method of any of the above-mentioned embodiments. The nanoprobe production method includes: obtaining a nanoprobe raw material, the nanoprobe raw material being cylindrical; electrolytically polishing one end of the nanoprobe raw material to electrolytically polish the cylindrical end of the nanoprobe raw material into a needle tip shape, thereby obtaining an initial nanoprobe; placing the needle tip of the initial nanoprobe at the center of a concentric circular ion beam etching pattern, and ion beam etching the needle tip of the initial nanoprobe using an ion beam in the concentric circular ion beam etching pattern, thereby obtaining the nanoprobe.

[0075] In some examples, the nanoprobe is obtained by ion beam etching the tip of an initial nanoprobe using an ion beam in a concentric circular ion beam etching pattern, including: setting the outer diameter and inner diameter of the concentric circular ion beam etching pattern; etching one end of the tip of the initial nanoprobe using an ion beam in a concentric circular ion beam etching pattern; after etching the tip of the initial nanoprobe to a desired size corresponding to the outer diameter and inner diameter, resetting the outer diameter and inner diameter of the concentric circular ion beam etching pattern, and etching one end of the tip of the initial nanoprobe until the nanoprobe is obtained, and the outer diameter and inner diameter of the re-set concentric circular ion beam etching pattern are lower than the outer diameter and inner diameter of the concentric circular ion beam etching pattern before the re-setting.

[0076] In some examples, the outer diameter and inner diameter of the concentric circular ion beam etching pattern are reset, and one end of the tip of the initial nanoprobe is etched until the nanoprobe is obtained, including: resetting the outer diameter and inner diameter of the concentric circular ion beam etching pattern, and etching one end of the tip of the initial nanoprobe; when the tip of the initial nanoprobe after etching meets the target size, setting the inner diameter of the concentric circular ion beam etching pattern to zero, and cleaning the tip of the initial nanoprobe that meets the target size through the concentric circular ion beam etching pattern with an inner diameter of zero to obtain the nanoprobe.

[0077] In some examples, after resetting the outer diameter and inner diameter of the concentric circular ion beam etched pattern, the method further includes: repositioning the tip end of the initial nanoprobe at the center of the concentric circular ion beam etched pattern.

[0078] In some examples, placing one end of the tip of the initial nanoprobe at the center of a concentric circular ion beam etching pattern includes: searching for the common focal point position of the ion beam and electron beam corresponding to the concentric circular ion beam etching pattern at the center of the concentric circular ion beam etching pattern; and placing one end of the tip of the initial nanoprobe at the common focal point position.

[0079] In some examples, before obtaining the nanoprobe by ion beam etching the tip of the initial nanoprobe using a concentric circular ion beam etching pattern, the method further includes: setting the etching direction of the ion beam etching of the tip of the initial nanoprobe to be from the outer diameter of the concentric circular ion beam etching pattern to the inner diameter of the concentric circular ion beam etching pattern.

[0080] In some examples, after electropolishing one end of the nanoprobe raw material to transform the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe, the method further includes: obtaining a probe shape corresponding to the nanoprobe machine; and bending the initial nanoprobe according to the probe shape corresponding to the nanoprobe machine so that the shape of the initial nanoprobe matches the probe shape corresponding to the nanoprobe machine.

[0081] In some examples, one end of the nanoprobe raw material is electropolished to transform the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe, including: determining an etching position on the nanoprobe raw material; and placing one end of the nanoprobe raw material in a pre-set electrochemical corrosion solution based on the etching position and performing electropolishing in stages to obtain an initial nanoprobe.

[0082] In some examples, the electrochemical etching solution is a 5% sodium hydroxide solution.

[0083] All of the above optional technical solutions can be combined in any way to form optional embodiments of the present application, and will not be described in detail here.

[0084] The following are device embodiments of the present application, which can be used to implement the method embodiments of the present application. For details not disclosed in the device embodiments of the present application, please refer to the method embodiments of the present application.

[0085] This embodiment also provides a nanoprobe manufacturing device, such as Figure 9 As shown, the device includes:

[0086] An acquisition module 901 is used to acquire a nanoprobe raw material, where the nanoprobe raw material is cylindrical;

[0087] The polishing module 902 is used to perform electrolytic polishing on one end of the nanoprobe raw material to electrolytically polish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe;

[0088] The etching module 903 is used to place one end of the tip of the initial nanoprobe at the center of the concentric circular ion beam etching pattern, and perform ion beam etching on the tip of the initial nanoprobe using an ion beam in the concentric circular ion beam etching pattern to obtain a nanoprobe.

[0089] In some examples, the etching module 903 is also used to set the outer diameter and inner diameter of the concentric circular ion beam etching pattern; the tip end of the initial nanoprobe is etched by an ion beam using a concentric circular ion beam etching pattern; after the tip of the initial nanoprobe is etched to a desired size corresponding to the outer diameter and inner diameter, the outer diameter and inner diameter of the concentric circular ion beam etching pattern are reset, and the tip end of the initial nanoprobe is etched until a nanoprobe is obtained, and the outer diameter and inner diameter of the reset concentric circular ion beam etching pattern are lower than the outer diameter and inner diameter of the concentric circular ion beam etching pattern before the reset.

[0090] In some examples, the etching module 903 is also used to reset the outer diameter and inner diameter of the concentric circular ion beam etching pattern to etch one end of the tip of the initial nanoprobe; when the tip of the initial nanoprobe after etching meets the target size, the inner diameter of the concentric circular ion beam etching pattern is set to zero, and the tip of the initial nanoprobe that meets the target size is cleaned by the concentric circular ion beam etching pattern with an inner diameter of zero to obtain a nanoprobe.

[0091] In some examples, the etching module 903 is further configured to reposition the tip end of the initial nanoprobe at the center of the concentric circular ion beam etching pattern.

[0092] In some examples, the etching module 903 is further used to find the common focal point position of the ion beam and electron beam corresponding to the concentric circular ion beam etching pattern at the center position of the concentric circular ion beam etching pattern; and place one end of the tip of the initial nanoprobe at the common focal point position.

[0093] In some examples, the etching module 903 is further configured to set the etching direction of the ion beam etching on the tip of the initial nanoprobe to be from the outer diameter of the concentric circular ion beam etching pattern to the inner diameter of the outer diameter of the concentric circular ion beam etching pattern.

[0094] In some examples, the etching module 903 is also used to obtain the probe shape corresponding to the nanoprobe machine; according to the probe shape corresponding to the nanoprobe machine, the initial nanoprobe is bent so that the shape of the initial nanoprobe matches the probe shape corresponding to the nanoprobe machine.

[0095] In some examples, the polishing module 902 is also used to determine the etching position on the nanoprobe raw material; based on the etching position, one end of the nanoprobe raw material is placed in a pre-set electrochemical corrosion solution and electrolytic polishing is performed in stages to obtain an initial nanoprobe.

[0096] According to the technical solution provided in the embodiment of the present application, the manufacturing device of the nanoprobe obtains the nanoprobe raw material, and then electrolytically polishes one end of the nanoprobe raw material to electrolytically polish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe; the needle tip end of the initial nanoprobe is placed at the center position of the concentric circular ion beam etching pattern, and the needle tip of the initial nanoprobe is ion beam-etched by an ion beam in a concentric circular ion beam etching pattern to obtain a nanoprobe. The present application first rough-processes the cylindrical nanoprobe raw material through an electrolytic polishing process to form a nanoprobe with an initial needle tip morphology. The initial nanoprobe reduces the difficulty of subsequent processing, and then the ion beam etching method with a concentric circular ion beam etching pattern is used to perform directionally fine etching on the tip area of ​​the initial nanoprobe, so that the tip morphology has a high degree of symmetry and structural stability at the nanoscale, which effectively improves the accuracy and molding consistency of the tip, and finally obtains a nanoprobe with high morphological accuracy and excellent functional performance, avoiding the problem of low precision in the preparation of nanoprobes in related technologies. In addition, the cylindrical nanoprobe raw material is rough-processed by the electrolytic polishing process, which reduces the difficulty of ion beam etching and thereby improves the preparation efficiency of the nanoprobe.

[0097] Figure 10 Schematic diagram of the electronic device 10 provided in the embodiment of the present application. Figure 10 As shown, the electronic device 10 of this embodiment includes: a processor 1001, a memory 1002, and a computer program 1003 stored in the memory 1002 and executable by the processor 1001. When the processor 1001 executes the computer program 1003, the steps of the above-described method embodiments are implemented. Alternatively, when the processor 1001 executes the computer program 1003, the functions of the modules / units in the above-described device embodiments are implemented.

[0098] The electronic device 10 may be a desktop computer, a notebook, a PDA, a cloud server, or other electronic device. The electronic device 10 may include but is not limited to a processor 1001 and a memory 1002. Those skilled in the art will appreciate that Figure 10 The electronic device 10 is merely an example and does not limit the electronic device 10 . The electronic device 10 may include more or fewer components than shown in the figure, or different components.

[0099] The processor 1001 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0100] Memory 1002 can be an internal storage unit of electronic device 10, such as a hard disk or memory of electronic device 10. Memory 1002 can also be an external storage device of electronic device 10, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) card, a Flash Card, etc. equipped on electronic device 10. Memory 1002 can also include both an internal storage unit of electronic device 10 and an external storage device. Memory 1002 is used to store computer programs and other programs and data required by the electronic device.

[0101] Those skilled in the art will clearly understand that for the sake of convenience and brevity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The above-mentioned integrated units can be implemented in the form of hardware or in the form of software functional units.

[0102] If the integrated module / unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present application implements all or part of the process in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and when the computer program is executed by the processor, it can implement the steps of the above-mentioned various method embodiments. The computer program may include computer program code, which may be in source code form, object code form, executable file or some intermediate form. The computer-readable medium may include: any entity or device capable of carrying computer program code, recording medium, USB flash drive, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electric carrier signal, telecommunication signal and software distribution medium. It should be noted that the content contained in the computer-readable medium can be appropriately increased or decreased according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media do not include electric carrier signals and telecommunication signals.

[0103] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present application, and should all be included in the scope of protection of the present application.

Claims

1. A method for making a nanoprobe, characterized in that: The method comprises: Obtaining a nanoprobe raw material, wherein the nanoprobe raw material is cylindrical; Performing electrolytic polishing on one end of the nanoprobe raw material to electrolytically polish the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe; One end of the tip of the initial nanoprobe is placed at the center of a concentric circular ion beam etching pattern, and the tip of the initial nanoprobe is ion beam etched by an ion beam in the concentric circular ion beam etching pattern to obtain a nanoprobe.

2. The method according to claim 1, characterized in that The method comprises: performing ion beam etching on the tip of the initial nanoprobe using the concentric circular ion beam etching pattern to obtain the nanoprobe, comprising: Setting the outer diameter and inner diameter of the concentric circular ion beam etching pattern; Etching one end of the tip of the initial nanoprobe by using an ion beam with the concentric circular ion beam etching pattern; After etching the tip of the initial nanoprobe to the desired size corresponding to the outer diameter and inner diameter, the outer diameter and inner diameter of the concentric circular ion beam etching pattern are reset, and one end of the tip of the initial nanoprobe is etched until the nanoprobe is obtained. The outer diameter and inner diameter of the reset concentric circular ion beam etching pattern are lower than the outer diameter and inner diameter of the concentric circular ion beam etching pattern before the reset.

3. The method according to claim 2, characterized in that Resetting the outer diameter and inner diameter of the concentric circular ion beam etching pattern and etching one end of the tip of the initial nanoprobe until the nanoprobe is obtained, comprising: resetting the outer diameter and inner diameter of the concentric circular ion beam etching pattern, and etching one end of the tip of the initial nanoprobe; When the tip of the initial nanoprobe after etching meets the target size, the inner diameter of the concentric circular ion beam etching pattern is set to zero, and the tip of the initial nanoprobe that meets the target size is cleaned by the concentric circular ion beam etching pattern with an inner diameter of zero to obtain the nanoprobe.

4. The method according to claim 2, characterized in that After resetting the outer diameter and inner diameter of the concentric circular ion beam etching pattern, the method further comprises: The tip of the initial nanoprobe is re-placed at the center of the concentric circular ion beam etching pattern.

5. The method according to claim 1, wherein Placing one end of the tip of the initial nanoprobe at the center of a concentric circular ion beam etched pattern, comprising: Searching for a common focal point position of the ion beam and the electron beam corresponding to the concentric circular ion beam etching pattern at the center position of the concentric circular ion beam etching pattern; The tip of the initial nanoprobe is placed at the confocal position.

6. The method according to claim 1, wherein Before obtaining the nanoprobe by ion beam etching the tip of the initial nanoprobe using the concentric circular ion beam etching pattern, the method further comprises: The etching direction of the ion beam etching performed on the needle tip of the initial nanoprobe is set to be from the outer diameter of the concentric circular ion beam etching pattern to the inner diameter of the concentric circular ion beam etching pattern.

7. The method according to claim 1, characterized in that After electropolishing one end of the nanoprobe raw material to transform the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe, the method further comprises: Obtain the probe shape corresponding to the nanoprobe machine; The initial nanoprobe is bent according to the probe shape corresponding to the nanoprobe machine, so that the shape of the initial nanoprobe matches the probe shape corresponding to the nanoprobe machine.

8. The method according to claim 1, characterized in that Electropolishing one end of the nanoprobe raw material to transform the cylindrical end of the nanoprobe raw material into a needle tip shape to obtain an initial nanoprobe, comprising: determining an etching position on the nanoprobe raw material; Taking the etching position as a reference, one end of the nanoprobe raw material is placed in a pre-set electrochemical etching solution and electrolytically polished in stages to obtain the initial nanoprobe.

9. The method according to claim 8, characterized in that The electrochemical corrosion solution is a 5% concentration sodium hydroxide solution.

10. A nanoprobe, characterized in that: The nanoprobe is made according to the method according to any one of claims 1 to 9.

Images