Plasma source assembly, semiconductor process chamber, and method

Abstract

The application discloses a kind of plasma source assembly and semiconductor process chamber, belong to the field of semiconductors.A kind of plasma source assembly, applied to semiconductor process chamber, the plasma source assembly includes: insulating medium pipe, Faraday shield, coil and magnetic conducting piece;The insulating medium pipe is used to communicate with the cavity of the semiconductor process chamber;The coil is wound on the outside of the insulating medium pipe;The magnetic conducting piece is encircled in the outer periphery of the coil.A kind of semiconductor process chamber includes the above-mentioned plasma source assembly.The application can at least solve the problem that high power in coil leads to higher power loss.

Description

Technical Field

[0001] This application belongs to the field of semiconductors, specifically relating to a plasma source component, a semiconductor process chamber, and a method. Background Technology

[0002] In IC manufacturing processes, photoresist removal plays a crucial role. The most common method is ICP (Inductively Coupled Plasma) systems. Plasma photoresist removal primarily utilizes the chemical reaction between ionized oxygen and the photoresist to remove it. Adding a certain proportion of N2 (typically an O2 / N2 ratio of approximately 10:1) during this process can act as a catalyst, increasing the photoresist etching rate. Since the main components of photoresist are organic compounds of carbon, hydrogen, and oxygen, under radio frequency (RF) conditions, oxygen is ionized into oxygen atoms, free radicals, and ions, which react chemically with the photoresist to produce carbon monoxide, carbon dioxide, and water. These products are then pumped away, thus achieving photoresist removal.

[0003] In some processes, a plasma source compatible with high power (e.g., 5KW) is required to quickly remove photoresist. However, due to the skin resistance and contact resistance on the coil, the high current brought by high power will increase the power loss on the coil. Therefore, in current processes, it is necessary to reduce the power of the plasma source to reduce power loss, which inadvertently affects the process rate. Summary of the Invention

[0004] The purpose of this application is to provide a plasma source component, a semiconductor process chamber, and a method that can at least solve the problem of high power loss caused by high power in coils.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows:

[0006] This application provides a plasma source assembly for use in a semiconductor process chamber. The plasma source assembly includes: an insulating dielectric tube, a coil, and a magnetic conductive element.

[0007] The insulating dielectric tube is used to communicate with the cavity of the semiconductor process chamber;

[0008] The coil is wound around the outside of the insulating dielectric tube;

[0009] The magnetic conductor surrounds the outer periphery of the coil.

[0010] This application embodiment also provides a semiconductor process chamber, including: a chamber, an inlet assembly, a carrier assembly, and the aforementioned plasma source assembly;

[0011] One end of the insulating medium tube is connected to the cavity, and the air intake assembly is located at the end of the insulating medium tube away from the cavity.

[0012] The support assembly is disposed within the cavity.

[0013] This application embodiment also provides a semiconductor process method applied to a semiconductor process chamber, the method comprising:

[0014] Process gas is introduced into the insulating dielectric tube;

[0015] The first end of the magnetic conductor is brought close to the input end of the coil;

[0016] Ignition is performed;

[0017] The first end of the magnetic conductor is moved away from the input end of the coil (130);

[0018] To carry out semiconductor processes.

[0019] In this embodiment, by setting the magnetic conductor, the magnetic field generated by the coil can be confined within the range of the magnetic conductor, making the magnetic field around the magnetic conductor weaker, thereby enhancing the magnetic induction intensity inside the insulating dielectric tube; in addition, it can also increase the inductance of the coil and reduce the current on the coil, thereby reducing the power loss on the coil; due to the enhanced magnetic induction intensity, it can also improve the process efficiency. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a process chamber in a related technology;

[0021] Figure 2 This is a schematic diagram of the structure of the semiconductor process chamber disclosed in the embodiments of this application;

[0022] Figure 3 This is a schematic diagram of the structure of the magnetic conductive component disclosed in the embodiments of this application;

[0023] Figure 4 This is a cross-sectional view of the semiconductor process chamber in the first state disclosed in the embodiments of this application;

[0024] Figure 5 This is a cross-sectional view of the semiconductor process chamber in the second state disclosed in the embodiments of this application;

[0025] Figure 6 This is a schematic diagram of the structure of the fixed bracket disclosed in the embodiments of this application;

[0026] Figure 7 This is a schematic diagram of the connecting component mechanism disclosed in an embodiment of this application;

[0027] Figure 8 This is a schematic diagram showing the magnetic induction intensity inside the insulating dielectric tube at different distances from the edge of the insulating dielectric tube as disclosed in the embodiments of this application;

[0028] Figure 9 This is a schematic diagram of the magnetic induction intensity in the absence of a magnetic conductive element as disclosed in the embodiments of this application;

[0029] Figure 10 This is a schematic diagram of the magnetic induction intensity in the case of a magnetically conductive component as disclosed in the embodiments of this application;

[0030] Figure 11 This is a schematic diagram of the magnetic induction intensity during the ignition stage as disclosed in an embodiment of this application;

[0031] Figure 12 This is a schematic diagram of the magnetic induction intensity during the process stage disclosed in the embodiments of this application.

[0032] Explanation of reference numerals in the attached figures:

[0033] 01-Coil; 02-Quartz tube; 03-Faraday shielding structure; 04-Intake assembly; 05-Upper electrode aluminum cover plate structure; 06-Flow equalizer; 07-Outer wall of the chamber; 08-Base;

[0034] 100 - Plasma source assembly;

[0035] 110 - Insulating dielectric tube;

[0036] 120-Faraday shielding;

[0037] 130-coil;

[0038] 140 - Magnetic conductor; 141 - Cylinder body; 1411 - First end; 1412 - Second end; 142 - First ring body; 143 - Second ring body;

[0039] 150 - Drive component; 151 - Linear drive component; 152 - Connector;

[0040] 160 - Fixed bracket; 161 - Card slot;

[0041] 200-cavity;

[0042] 300 - Intake assembly;

[0043] 400 - Load-bearing component;

[0044] 500 - Flow equalization component. Detailed Implementation

[0045] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0046] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0047] The embodiments of this application will be described in detail below with reference to the accompanying drawings and specific examples and application scenarios.

[0048] refer to Figure 1 The related technology provides a process chamber, wherein 01 is a coil, 02 is a quartz tube, 03 is a Faraday shielding structure, 04 is an air inlet assembly, 05 is an upper electrode aluminum cover plate structure, 06 is a flow equalization plate, 07 is the outer wall of the chamber, and 08 is a base. The specific process of this process chamber is as follows: process gas is introduced into the quartz tube 02 through the air inlet assembly 04, and power is fed into the coil 01 through a coaxial line and a matching device, so that the coil 01 can generate an electromagnetic field around the quartz tube 02, thereby ionizing the process gas in the quartz tube 02; the products formed after ionization diffuse to the base 08 through the flow equalization plate 06, so as to react on the wafer surface supported by the base 08.

[0049] However, during the above process, skin resistance will form on the surface of coil 01, and contact resistance will be generated between coil 01 and the part connected to the connecting strip by screws. Thus, due to the presence of skin resistance and contact resistance, the high current brought by high power will cause the power loss on coil 01 to increase.

[0050] To address the aforementioned problems, this application discloses a plasma source assembly 100 applied in a semiconductor process chamber. The semiconductor process chamber can be a resist removal chamber, but it can also be other types of chambers; no specific limitation is made here. (Reference) Figures 2 to 12 The disclosed plasma source assembly 100 includes an insulating dielectric tube 110, a coil 130, and a magnetic conductor 140.

[0051] The insulating dielectric tube 110 is used to communicate with the cavity 200 of the semiconductor process chamber, and the coil 130 is located outside the insulating dielectric tube 110. During the process, power can be fed into the coil 130 through a coaxial cable and a matching device, and the coil 130 generates an electromagnetic field around the insulating dielectric tube 110 to ionize the process gas entering the insulating dielectric tube 110. For example, the insulating dielectric tube 110 can be a quartz tube.

[0052] For example, when the semiconductor process chamber is a photoresist removal chamber, a mixture of oxygen and nitrogen can be introduced into the insulating dielectric tube 110, wherein oxygen can act as a reactant gas and nitrogen can act as a catalyst gas. In some embodiments, the ratio of oxygen to nitrogen can be 10:1, but other ratios are also possible and are not specifically limited here. Under the influence of the electromagnetic field around the insulating dielectric tube 110, the oxygen will be ionized, so that the ionized oxygen can react chemically with the photoresist to achieve the effect of removing the photoresist.

[0053] The magnetic conductor 140 surrounds the outer periphery of the coil 130. In this way, the magnetic conductor 140 can constrain the magnetic field generated by the coil 130, thereby enhancing the magnetic induction intensity in the insulating dielectric tube 110.

[0054] Based on the above configuration, the magnetic field generated by the coil 130 can be confined within the magnetic conductor 140, making the magnetic field around the magnetic conductor 140 weaker, thereby enhancing the magnetic induction intensity within the insulating dielectric tube 110. In addition, the inductance of the coil can be increased, the current on the coil can be reduced, thereby reducing the power loss on the coil. Due to the enhanced magnetic induction intensity, the process efficiency can also be improved.

[0055] refer to Figure 3 In some embodiments, the magnetic conductor 140 may include a cylindrical body 141, which is sleeved on the outside of the coil 130. The cylindrical body 141 can surround the coil 130, so as to affect the inductance of the coil 130 from all directions, thereby increasing the inductance at all locations of the coil 130 more uniformly, thereby reducing the current in the coil 130 and reducing the loss in the coil 130.

[0056] Considering that the coil 130 can be arranged in a multi-turn spiral shape, so that the coil 130 has a certain distance in the axial direction, in order to affect the inductance of the entire coil 130, the length of the cylinder 141 can be greater than or equal to the axial distance of the coil 130, so as to achieve all-round encirclement of the coil 130.

[0057] For example, the cylinder 141 can be a cylindrical cylinder, a prism cylinder, etc., or of course, it can be other shapes, as long as it can wrap the coil 130.

[0058] Additionally, the magnetic conductor 140 may also include a first ring 142, which is connected to a first end 1411 of the cylinder 141 along its own axial direction, and extends toward the axial direction of the cylinder 141. With this arrangement, the first ring 142 can shield the coil 130, thereby affecting the electric and magnetic fields near the region of the coil 130 close to the first ring 142, thus increasing the electric and magnetic fields near the region of the coil 130 close to the first ring 142, which can aid in ignition during the ignition phase.

[0059] Of course, the magnetic conductor 140 may also include a second ring 143, which is connected to the second end 1412 of the cylinder 141 along its own axis and extends toward the axis of the cylinder 141 so as to achieve the limiting effect on the magnetic conductor 140 by contacting the limiting structure through the second ring 143.

[0060] Furthermore, the distance between the surface of the first ring 142 facing the inside of the cylinder 141 and the surface of the second ring 143 facing the inside of the cylinder 141 is greater than the maximum distance of the coil 130 along its own axial direction. Based on this arrangement, the magnetic conductor 140 can be wrapped around the outer periphery of the coil 130, while also allowing for a certain axial gap between the coil 130 and the magnetic conductor 140, thus providing space for relative movement between them.

[0061] Considering that a high voltage in coil 130 could damage the insulating dielectric tube 110, the plasma source assembly in this embodiment may further include a Faraday shield 120, which surrounds the outer periphery of the insulating dielectric tube 110, with coil 130 wound around the outside of the Faraday shield 120. This arrangement reduces capacitive coupling through the Faraday shield 120, thereby protecting the insulating dielectric tube 110 and mitigating the risk of damage.

[0062] Although adding the Faraday shield 120 can reduce capacitive coupling and protect the insulating dielectric tube 110, the Faraday shield 120 can also lead to excessively low capacitive coupling, making ignition difficult. Therefore, this embodiment adds a magnetic conductor 140 to enhance the electromagnetic field around the coil 130, thereby increasing the voltage and optimizing ignition, which is beneficial for ignition.

[0063] Considering that the position of the magnetic conductor 140 has different effects on the electric and magnetic fields near the coil 130 at different stages, it is necessary to change the position of the magnetic conductor 140 relative to the coil 130 according to the requirements of the electric and magnetic fields at different stages to meet the requirements at different stages.

[0064] Based on the above, in this embodiment, the magnetic conductor 140 is movable relative to the coil 130 along the axial direction of the insulating medium tube 110. In this way, the position of the magnetic conductor 140 relative to the coil 130 in the axial direction of the insulating medium tube 110 can be adjusted, thereby changing the relative position between the magnetic conductor 140 and the coil 130 accordingly.

[0065] During the ignition phase, since high voltage facilitates ignition, the voltage of coil 130 can be increased accordingly by appropriately increasing the electric field near coil 130 to facilitate ignition. In this case, the magnetic conductor 140 can be moved along the first direction, so that the first end 1411 of the magnetic conductor 140 is close to the input end of coil 130 (i.e., the highest voltage end). At this time, the electric and magnetic fields near the input end of coil 130 can be relatively increased through the magnetic conductor 140.

[0066] Furthermore, COMSOL simulations show that the electric field 1mm above the center of coil 130 during the ignition process is 1710V / m, while the electric field at the same location during the manufacturing process is 1525V / m. Therefore, the voltage of coil 130 during the ignition stage is equal to the voltage of coil 130 during the manufacturing process multiplied by 1710 / 1525. Based on this, the voltage of coil 130 during the ignition stage is higher than that during the manufacturing process, thus the higher voltage during the ignition stage can facilitate ignition.

[0067] For example, during the ignition stage, the distance between the input end of the coil 130 and the first end 1411 of the magnetic conductor 140 can range from 3mm to 45mm, including, for example, 3mm, 10mm, 20mm, 30mm, 40mm, 45mm, etc., and of course, other distances are also possible, without specific limitations here. In a more specific embodiment, the above distance can be 3mm to meet the requirements of actual working conditions. Figure 4 As shown, the input terminal of coil 130 can be the upper end of coil 130, which is also the highest voltage terminal. In addition, during the ignition phase, the linear drive 151 is in a low position, and the input terminal (i.e., the upper end) of coil 130 is close to the magnetic conductor 140.

[0068] According to the magnetic field formula It can be known that the magnetic induction intensity Where l1 represents the path inside the insulating dielectric tube 110, μ1 represents the permeability inside the insulating dielectric tube 110, l2 represents the path outside the insulating dielectric tube 110, and μ2 represents the permeability outside the insulating dielectric tube 110. Because the permeability of the magnetically conductive element 140 is relatively large, approximately 100 H / m, the ratio of l2 / μ2 is approximately 0, and the magnetic induction intensity nearly doubles. After adding the magnetically conductive element 140, the magnetic field is essentially confined within the range of the magnetically conductive element 140, such as... Figure 10 As shown.

[0069] According to the formula It can be seen that the electric field and magnetic induction intensity near the uppermost end (i.e., the first end 1411) of the magnetic conductor 140 are both increased. Here, the magnetic induction intensity B is a complex number that can change with time; for example, the magnetic induction intensity can be expressed as B0*e jwt For example, B0 is the magnitude, which is generally considered to be the magnitude of the magnetic field strength, w is the angular frequency, w = 2πf, where f is the frequency. For B0*j*w*e jwt That is, j*w*B. Therefore, the magnitude of the electric field strength is directly proportional to the magnitude of the magnetic induction.

[0070] According to the voltage formula It can be seen that voltage is directly proportional to electric field. According to COMSOL simulation, the voltage of coil 130 is 5785V.

[0071] Considering that oxygen is the main process gas, the photoresist removal process mainly involves the reaction of oxygen with the photoresist, with nitrogen acting as a catalyst to increase dissociation; when the OES detects a significant increase in the intensity of the oxygen spectrum, it indicates that the process has begun.

[0072] During the manufacturing process, since low voltage helps reduce damage to the insulating dielectric tube 110, the voltage of the coil 130 can be reduced accordingly by appropriately decreasing the electric field near the coil 130, thereby reducing damage to the insulating dielectric tube 110. In this case, the magnetic conductor 140 can be moved in the opposite direction to the first direction, so that the first end 1411 of the magnetic conductor 140 is away from the input end of the coil 130. At this time, the electric and magnetic fields near the input end of the coil 130 can be relatively reduced by the magnetic conductor 140. The voltage of the coil 130 can be calculated to be 5159V according to the formula ε=wL*I. Wherein, the angular frequency w=2πf, f is the frequency, the frequency f is 13.56MHz in this embodiment, L is the inductance value, and I is the current.

[0073] Based on the above, it can be seen that the coil voltage of the process stage is 5159V, which is lower than that of the ignition stage, and higher than that of the coil voltage of 4830V in related technologies, which is beneficial for ignition.

[0074] like Figure 11 and Figure 12 As shown, the magnetic induction intensity during the ignition stage is approximately 0.0036T, slightly higher than the magnetic induction intensity of 0.00335T during the process stage. The high magnetic induction intensity during the ignition stage is due to... The electric field is proportional to the magnitude of the magnetic induction intensity; a higher electric field is obtained, and because... Voltage is proportional to electric field, thus obtaining a higher voltage.

[0075] For example, during the manufacturing process, the distance between the input end of the coil 130 and the first end 1411 of the magnetic conductor 140 can range from 3mm to 45mm, including, for example, 3mm, 10mm, 15mm, 20mm, 30mm, 40mm, 45mm, etc., and of course, other distances are also possible, which are not specifically limited here. In a more specific embodiment, the above distance can be 15mm to meet the requirements of actual working conditions.

[0076] Based on the above settings, in the embodiments of this application, in the first state, as follows: Figure 4 As shown, the first end 1411 of the magnetic conductor 140 is adjacent to the input end of the coil 130, and a first gap exists between the first end 1411 of the magnetic conductor 140 and the input end of the coil 130 along the axial direction of the insulating dielectric tube 110. Exemplarily, in this state, a first ring 142 located at the first end 1411 of the magnetic conductor 140 has a first gap between it and the input end of the coil 130. This first state is within the ignition phase.

[0077] In the second state, such as Figure 5 As shown, the first end 1411 of the magnetic conductor 140 is located away from the input end of the coil 130, and a second gap exists between the first end 1411 of the magnetic conductor 140 and the input end of the coil 130 along the axial direction of the insulating dielectric tube 110. Exemplarily, in this state, a second gap exists between the first ring 142 located at the first end 1411 of the magnetic conductor 140 and the input end of the coil 130. This second state is within the manufacturing process.

[0078] To optimize ignition, the voltage of coil 130 during the ignition stage can be greater than that during the manufacturing stage. Based on this, the second spacing can be greater than the first spacing. Thus, during the ignition stage, the magnetic component 140 is closer to the input terminal of coil 130, resulting in a more significant increase in the electric field near the input terminal, and consequently, a more significant increase in voltage. Conversely, during the manufacturing stage, the magnetic component 140 is farther from the input terminal of coil 130, resulting in a less significant increase in the electric field near the input terminal, and consequently, a less significant increase in voltage. Therefore, a higher coil 130 voltage during the ignition stage aids in ignition, while a lower coil 130 voltage during the manufacturing stage helps reduce damage to the insulating dielectric tube 110.

[0079] For example, the range of the first spacing can be 3mm to 45mm, and optionally, the first spacing can be 3mm; the range of the second spacing can be 3mm to 45mm, and optionally, the second spacing can be 15mm.

[0080] To enable the movement of the magnetic conductor 140, the plasma source assembly 100 may further include a driving component 150 connected to the magnetic conductor 140 for driving the magnetic conductor 140 to move relative to the coil 130 along the axial direction of the insulating dielectric tube 110. The driving component 150 may be a linear driving component, capable of moving the magnetic conductor 140 to adaptably adjust the voltage of the coil 130 under different operating conditions by changing the relative position between the magnetic conductor 140 and the coil 130, thereby meeting the voltage requirements of the coil 130 during the ignition and process stages respectively.

[0081] refer to Figure 4 and Figure 5 In some embodiments, the driving component 150 may include a linear drive 151 and a connector 152, wherein the connector 152 connects the driving end of the linear drive 151 to the magnetic conductor 140. Based on this, the linear drive 151 can provide driving force, and the connector 152 transmits the power and motion to the magnetic conductor 140, thereby enabling the magnetic conductor 140 to move axially along the insulating dielectric tube 110. The connector 152 and the magnetic conductor 140 can be fixedly connected, detachably connected, or, alternatively, in contact rather than fixedly connected. In this case, the linear drive 151 can drive the connector 152 to move, and the connector 152 can support the magnetic conductor 140 to move.

[0082] For example, the linear drive 151 can be a cylinder, a hydraulic cylinder, an electric cylinder, etc., and of course, it can also be other forms, which are not specifically limited here.

[0083] Connector 152 can be a plate, such as an L-shaped part, etc. Figure 7 As shown, the connector 152 is connected to the drive end of the linear drive 151 by a screw, and the other end of the connector 152 can be connected to the magnetic conductor 140 so as to drive the magnetic conductor 140 to move.

[0084] To achieve fixed installation of the coil 130, the plasma source assembly 100 may further include a mounting bracket 160, such as... Figures 4 to 6 As shown, the fixing bracket 160 is located on the outside of the Faraday shield 120, and the outer wall of the fixing bracket 160 is provided with multiple slots 161 arranged along the axial direction of the insulating dielectric tube 110. The coil 130 is secured in the multiple slots 161. Based on this, the coil 130 can be engaged at multiple positions through the multiple slots 161. At the same time, the fixing bracket 160 is connected to the Faraday shield 120, thereby realizing the engagement and fixation of the coil 130 to ensure the stability of the coil 130.

[0085] For example, the mounting bracket 160 can be fixed to the Faraday shield 120 by screws. Of course, other fixing methods can also be used, which are not specifically limited here.

[0086] In some embodiments, the length of the fixing bracket 160 in the axial direction of the insulating dielectric tube 110 can be between 100mm and 140mm to ensure that the fixing bracket 160 can be fixedly installed within the minimum size of the Faraday shield 120. For example, the length of the fixing bracket 160 can be 100mm, which is the minimum length required to install the fixing bracket 160 on the Faraday shield 120. This is because the greater the length of the fixing bracket 160, the greater the distance between the magnetic conductor 140 and the input end of the coil 130, and the less significant the improvement in ignition performance.

[0087] Furthermore, along the axial direction of the insulating dielectric tube 110, both the input and output ends of the coil 130 are located between the two ends of the fixed bracket 160, and the fixed bracket 160 is located between the two ends of the magnetic conductor 140. Based on this arrangement, the size of the magnetic conductor 140 can be larger than the size of the fixed bracket 160, and the size of the fixed bracket 160 is larger than the size of the coil 130. This ensures that the magnetic conductor 140 can surround the outside of the fixed bracket 160, thereby enclosing the coil 130 mounted on the fixed bracket 160, thus altering the electric and magnetic fields around the coil 130.

[0088] The length of the magnetic conductor 140 along the axial direction of the insulating medium tube 110 can range from 130mm to 170mm, for example, including 130mm, 140mm, 150mm, 160mm, 170mm, etc. Based on this size range, it can be ensured that the magnetic conductor 140 will not interfere with the fixed bracket 160 or the air intake assembly 300. For example, the length of the magnetic conductor 140 can be 130mm.

[0089] In some embodiments, the distance between the magnetic conductor 140 and the coil 130 in the direction perpendicular to the axial direction of the insulating dielectric tube 110 ranges from 15mm to 80mm, for example including 15mm, 20mm, 30mm, 40mm, 50mm, 60mm, 70mm, 80mm, etc., and of course, other values ​​are also possible, which are not specifically limited here. For example, the distance between the magnetic conductor 140 and the coil 130 can be 15mm, so that the magnetic conductor 140 can have a more significant influence on the electric and magnetic fields around the coil 130. The above-mentioned distance refers to the distance between the two closest points between the magnetic conductor 140 and the coil 130, such as the distance between the inner wall of the magnetic conductor 140 and the outermost end of the coil 130.

[0090] Considering that the ignition process is relatively long and the magnetic conductor 140 will generate heat during the process, a minimum distance is maintained in the direction perpendicular to the axial direction of the insulating medium tube 110, which is the heat dissipation distance, in order to improve the heat dissipation effect of the heat dissipation component.

[0091] It should be noted that the smaller the distance, the higher the magnetic field strength. Therefore, in this embodiment, the minimum distance between the magnetic conductor 140 and the coil 130 is preferably 15mm. In this case, both a sufficiently large magnetic field strength and good heat dissipation can be guaranteed.

[0092] In addition, the above-mentioned distance must also take into account that the magnetic conductor 140 will not interfere with the shielding box surrounding the coil 130. Therefore, in the embodiment of this application, the maximum distance between the magnetic conductor 140 and the coil 130 is preferably 80mm, in which case no interference will occur.

[0093] In this embodiment, the magnetic conductive element 140 can be a cylindrical structure with a wall thickness ranging from 5mm to 20mm, such as 5mm, 10mm, 15mm, 20mm, etc. Of course, other values ​​are also possible, which are not specifically limited here.

[0094] It should be noted that the thickness of the magnetic conductor 140 has a relatively small impact on the magnetic field. In this case, the thickness of the magnetic conductor 140 is mainly determined by cost factors, although strength factors can also be considered.

[0095] In some embodiments, the diameter of the inner ring surface of the first ring 142 can be equal to the diameter of the outer edge of the coil 130, and the diameter of the inner ring surface of the second ring 143 can be equal to the diameter of the outer edge of the coil 130. This arrangement can both prevent the magnetic conductor 140 from colliding with the coil 130 during movement and achieve all-round wrapping of the coil 130, thereby reducing magnetic field leakage to the periphery of the magnetic conductor 140, and to a certain extent, can help enhance the magnetic induction intensity within the insulating dielectric tube 110.

[0096] In addition, the axis of the magnetic conductor 140 can coincide with the axis of the insulating dielectric tube 110.

[0097] In this embodiment of the application, according to the magnetic field formula It can be known that the magnetic induction intensity Where l1 represents the path inside the insulating dielectric tube 110, μ1 represents the permeability inside the insulating dielectric tube 110, l2 represents the path outside the insulating dielectric tube 110, and μ2 represents the permeability outside the insulating dielectric tube 110. Since the permeability of the magnetic conductor 140 is relatively large, approximately 100 H / m, l2 / μ2 is approximately 0, nearly doubling the magnetic induction intensity and increasing the dissociation rate of oxygen free radicals. Simulation using the plasma simulation software COMSOL shows that the addition of the magnetic conductor 140 can increase the inductance of the coil 130, reduce the current in the coil 130, and thus reduce the losses in the coil 130 (because the power loss of the coil 130 = the square of the current in the coil 130 * the resistance loss of the coil 130).

[0098] Due to the requirement for high etching rates, it is necessary to further increase the rate, which requires the use of a magnetically conductive component 140 to enhance the magnetic field. In addition, the addition of the Faraday shield 120 (because the insulating dielectric tube 110 is relatively thin, about 3.5 mm, the Faraday shield 120 is required to prevent it from being etched) reduces capacitive coupling, which is not conducive to ignition. Therefore, the voltage can be enhanced by the magnetically conductive component 140, which is beneficial to ignition.

[0099] COMSOL simulations show that the inductance of coil 130 in the related technology is 2.97 μH and the current in coil 130 is 19.1 A; in this embodiment, the inductance of coil 130 is 3.69 μH and the current in coil 130 is 15.8 A. It can be seen that by adding the magnetic conductor 140, the current in coil 130 is reduced by approximately 17%, resulting in a reduction of approximately 31% in coil losses. This increases the free radical density within the insulating dielectric tube 110 by approximately 7.5%. The etching rate is proportional to the free radical density. Adding the magnetic conductor 140 within 45 mm of the edge of the insulating dielectric tube 110 improves the magnetic induction intensity. Figure 8As shown, the magnetic induction intensity B inside the insulating dielectric tube 110 at different distances from the edge of the insulating dielectric tube 110 is much higher than the magnetic field at the center at high frequency on the wall of the insulating dielectric tube 110 near the coil 130. Adding the magnetic conductor 140 will increase the magnetic field intensity near the wall of the insulating dielectric tube 110, reduce the loss on the coil 130, improve the efficiency of the entire system, and increase the etching rate.

[0100] Based on the plasma source assembly 100 described above, this application embodiment also discloses a semiconductor process chamber, with reference to... Figure 2 , Figure 4 and Figure 5 The disclosed semiconductor process chamber includes a cavity 200, an air intake assembly 300, a carrier assembly 400, and the aforementioned plasma source assembly 100. One end of the insulating dielectric tube 110 is connected to the cavity 200, the air intake assembly 300 is located at the end of the insulating dielectric tube 110 away from the cavity 200, and the carrier assembly 400 is located inside the cavity 200.

[0101] In addition to the above structure, the semiconductor process chamber may also include a flow equalizer 500. The flow equalizer 500 is disposed in the cavity 200 and is opposite to the insulating dielectric tube 110, so that the process gas in the insulating dielectric tube 110 can be fully diffused in the cavity 200 through the flow equalizer 500, thereby improving the process uniformity.

[0102] Based on the above configuration, when the coil 130 is energized, the process gas entering the insulating dielectric tube 110 via the gas inlet assembly 300 can be ionized and enter the cavity 200 via the flow equalizer 500. It can then react on the wafer surface supported by the carrier assembly 400 to achieve process processing. For example, oxygen atoms, free radicals, and ions generated by ionized oxygen can chemically react with the photoresist to achieve photoresist removal.

[0103] It should be noted that the specific structure and working principle of semiconductor process equipment can be found in relevant technologies, and will not be elaborated here.

[0104] Based on the aforementioned semiconductor process chamber, this application also discloses a semiconductor process method applied to a semiconductor process chamber, the disclosed method including:

[0105] Process gas is introduced into the insulating dielectric tube 110;

[0106] The first end 1411 of the magnetic conductor 140 is brought close to the input end of the coil 130;

[0107] Perform electric ignition;

[0108] Move the first end 1411 of the magnetic conductor 140 away from the input end of the coil 130;

[0109] To carry out semiconductor processes.

[0110] Specifically:

[0111] Process gas is introduced into the insulating medium pipe 110 through the air intake assembly;

[0112] The first end 1411 of the magnetic conductor 140 is brought closer to the coil 130 by moving the magnetic conductor 140.

[0113] The power supply feeds power into coil 130 through coaxial cable and matching device to ignite. The radio frequency energy generated by ignition is applied to process gas through coil 130 to ionize process gas into plasma.

[0114] After ignition is completed, the first end 1411 of the magnetic conductor 140 is moved away from the coil 130 by moving the magnetic conductor 140.

[0115] Semiconductor processing is performed when a significant increase in the spectral intensity of O is detected.

[0116] Based on the above steps, this embodiment of the application increases the voltage of the coil 130 by bringing the first end 1411 of the magnetic conductor 140 closer to the coil 130, thereby aiding ignition; and decreases the voltage of the coil 130 by moving the first end 1411 of the magnetic conductor 140 away from the coil 130, thereby reducing damage to the insulating dielectric tube 110 and also reducing power loss on the coil 130.

[0117] It should be noted that the specific principles of the above semiconductor process steps can be found in relevant technologies, and will not be elaborated here.

[0118] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A plasma source assembly, used in a semiconductor process chamber, characterized in that, The plasma source assembly (100) includes: an insulating dielectric tube (110), a coil (130), and a magnetic conductor (140). The insulating dielectric tube (110) is used to communicate with the cavity (200) of the semiconductor process chamber; The coil (130) is wound around the outside of the insulating dielectric tube (110); The magnetic conductor (140) surrounds the outer periphery of the coil (130), and the magnetic conductor (140) is movable relative to the coil (130) along the axial direction of the insulating dielectric tube (110).

2. The plasma source assembly according to claim 1, characterized in that, The magnetic conductor (140) includes a cylindrical body (141) which is sleeved on the outside of the coil (130).

3. The plasma source assembly according to claim 2, characterized in that, The magnetic conductive element (140) further includes a first ring (142), which is connected to a first end (1411) of the cylinder (141) along its own axis, and the first ring (142) extends toward the axis of the cylinder (141). The magnetic conductor (140) further includes a second ring (143), which is connected to the second end (1412) of the cylinder (141) along its own axis and extends toward the axis of the cylinder (141).

4. The plasma source assembly according to claim 3, characterized in that, The distance between the surface of the first ring (142) facing the inside of the cylinder (141) and the surface of the second ring (143) facing the inside of the cylinder (141) is greater than the maximum distance of the coil (130) along its own axis.

5. The plasma source assembly according to claim 1, characterized in that, The plasma source assembly also includes a Faraday shield (120) and a fixing bracket (160). The Faraday shield (120) surrounds the outer periphery of the insulating dielectric tube (110), the fixing bracket (160) is disposed on the outside of the Faraday shield (120), and the coil (130) is wound around the outside of the Faraday shield (120). The outer wall of the fixed bracket (160) is provided with a plurality of slots (161) arranged along the axial direction of the insulating medium tube (110), and the coil (130) is engaged in the plurality of slots (161).

6. The plasma source assembly according to any one of claims 1 to 5, characterized in that, The plasma source assembly (100) further includes a driving component (150) connected to the magnetic conductor (140) for driving the magnetic conductor (140) to move axially along the insulating dielectric tube (110).

7. The plasma source assembly according to any one of claims 1 to 5, characterized in that, In the first state, the first end (1411) of the magnetic conductor (140) is adjacent to the input end of the coil (130), and there is a first gap between the first end (1411) of the magnetic conductor (140) and the input end of the coil (130) in the axial direction of the insulating dielectric tube (110); The first spacing ranges from 3mm to 45mm.

8. The plasma source assembly according to claim 7, characterized in that, In the second state, the first end (1411) of the magnetic conductor (140) is away from the input end of the coil (130), and in the axial direction of the insulating dielectric tube (110), there is a second gap between the first end (1411) of the magnetic conductor (140) and the input end of the coil (130), and the second gap is greater than the first gap; The second spacing ranges from 3mm to 45mm.

9. The plasma source assembly according to claim 5, characterized in that, Along the axial direction of the insulating dielectric tube (110), the input and output ends of the coil (130) are located between the two ends of the fixed bracket (160), and the fixed bracket (160) is located between the two ends of the magnetic conductor (140).

10. The plasma source assembly according to any one of claims 1 to 5, characterized in that, In a direction perpendicular to the axial direction of the insulating dielectric tube (110), the distance between the magnetic conductor (140) and the coil (130) ranges from 15 mm to 80 mm.

11. The plasma source assembly according to claim 3, characterized in that, The diameter of the inner ring surface of the first ring body (142) is equal to the diameter of the outer edge of the coil (130); The diameter of the inner ring surface of the second ring (143) is equal to the diameter of the outer edge of the coil (130); The axis of the magnetic conductor (140) coincides with the axis of the insulating dielectric tube (110).

12. A semiconductor process chamber, characterized in that, include: The cavity (200), the air intake assembly (300), the load-bearing assembly (400), and the plasma source assembly (100) according to any one of claims 1 to 11. One end of the insulating medium tube (110) is connected to the cavity (200), and the air intake assembly (300) is located at the end of the insulating medium tube (110) away from the cavity (200); The support component (400) is disposed within the cavity (200).

13. A semiconductor processing method applied to the semiconductor process chamber of claim 12, characterized in that, The method includes: Process gas is introduced into the insulating dielectric tube (110); The first end (1411) of the magnetic conductor (140) is brought close to the input end of the coil (130); Ignition is performed; The first end (1411) of the magnetic conductor (140) is moved away from the input end of the coil (130); To carry out semiconductor processes.

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