Manufacturing method of glass substrate with conductive through holes

Abstract

The invention provides a manufacturing method of a glass substrate with conductive through holes, and the method comprises the following steps: providing a glass substrate which comprises a first surface and a second surface opposite to the first surface; forming a plurality of through holes from the first surface to the second surface of the glass substrate; providing a first conductive substrate layer, and forming a plurality of conductive columns on one side of the first conductive substrate layer; the diameter of the conductive column is smaller than the minimum inner diameter of the through hole; bonding the first conductive substrate layer with the glass substrate, so that the plurality of conductive columns are respectively positioned in the plurality of through holes; and forming a filling layer covering the inner wall of the through hole in an electroplating manner by taking the conductive column as an electroplating seed. The conductive columns are used as electroplating seeds, the filling layer is directly formed in the through hole, the problem that when the thickness-diameter ratio of the through hole is too high, it is difficult to deposit a metal seed layer in the middle of the through hole through physical vapor deposition is solved, and the filling quality of the follow-up filling layer is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for manufacturing a glass substrate with conductive through holes. Background Art

[0002] Currently, the processing of glass substrates with conductive through-holes is primarily accomplished through the following steps: First, multiple through-holes are formed through the glass substrate using laser etching; then, a metal seed layer is deposited on the inner walls of the through-holes; and finally, a conductive filler layer is formed within the through-holes using electroplating.

[0003] However, when the aspect ratio of a via is too high, forming a metal seed layer using physical vapor deposition (PVD) is challenging. For example, when using PVD to form a metal seed layer on the inner wall of an X-shaped via, the metal seed layer cannot be effectively formed at the waist of the via. This, in turn, prevents the subsequent filler layer from being successfully filled, ultimately affecting the product quality of the glass substrate with the conductive via. Summary of the Invention

[0004] In order to at least overcome the above-mentioned deficiencies in the prior art, the present application aims to provide a method for manufacturing a glass substrate with conductive through holes, the method comprising: Providing a glass substrate, the glass substrate comprising a first surface and a second surface opposite thereto; forming a plurality of through holes extending from the first surface to the second surface of the glass substrate; Providing a first conductive base layer, and forming a plurality of conductive pillars on one side of the first conductive base layer; the diameter of the conductive pillars is smaller than the minimum inner diameter of the through hole; Bonding the first conductive base layer to the glass substrate so that the plurality of conductive pillars are respectively located in the plurality of through holes; The conductive pillar is used as an electroplating seed to form a filling layer covering the inner wall of the through hole by electroplating.

[0005] In a possible implementation, before performing the steps of providing a first conductive base layer and forming a plurality of conductive pillars on one side of the first conductive base layer, the method further includes: placing the first conductive base layer on a carrier, with a side of the first conductive base layer away from the conductive pillars being bonded to the carrier; The step of using the conductive pillar as an electroplating seed to form a filling layer covering the inner wall of the through hole by electroplating includes: forming the filling layer covering at least the inner wall of the through hole on the first conductive base layer and the conductive pillar by electroplating; releasing the bond between the carrier and the first conductive base layer; The first conductive base layer and a portion of the filling layer are ground so that an edge of the filling layer exposed to the glass substrate is flush with the first surface and the second surface of the glass substrate.

[0006] In a possible implementation, the through hole includes a straight through hole; The diameter of the conductive pillar is smaller than the inner diameter of the through hole.

[0007] In a possible implementation, the through hole comprises a V-shaped through hole, and the inner diameter of the V-shaped through hole gradually increases from the second surface to the first surface of the glass substrate; The diameter of the conductive pillar is smaller than the inner diameter of the V-shaped through hole on the second surface of the glass substrate.

[0008] In a possible implementation manner, the through hole is an X-shaped through hole; The diameter of the conductive column is smaller than the waist diameter of the X-shaped through hole, and the height of the conductive column does not exceed one third of the thickness of the glass substrate.

[0009] In a possible embodiment, the through hole comprises an X-shaped through hole; wherein the X-shaped through hole is divided by its waist hole into a first portion close to the first surface of the glass substrate and a second portion close to the second surface of the glass substrate; The diameter of the conductive column is smaller than the waist diameter of the X-shaped through hole; Before performing the steps of providing a first conductive base layer and forming a plurality of conductive pillars on one side of the first conductive base layer, the method further includes: placing the first conductive base layer on a carrier, with a side of the first conductive base layer away from the conductive pillars being bonded to the carrier; The step of using the conductive pillar as an electroplating seed to form a filling layer covering the inner wall of the through hole by electroplating includes: forming the filling layer covering at least the first portion of the inner wall of the through hole on the first conductive base layer and the conductive pillar by electroplating; releasing the bond between the carrier and the first conductive base layer; grinding the first conductive base layer and a portion of the filling layer so that an edge of the filling layer exposed to the second surface of the glass substrate is flush with the second surface of the glass substrate; forming a second conductive base layer on the first surface of the glass substrate by physical vapor deposition, wherein the second conductive base layer is connected to the plurality of conductive pillars; forming the filling layer covering at least the second portion of the inner wall of the through hole on the second conductive base layer by electroplating; The second conductive base layer and a portion of the filling layer are ground so that the edge of the filling layer exposed to the glass substrate is flush with the first surface and the second surface of the glass substrate.

[0010] In a possible implementation, the step of forming a through hole extending from the first surface to the second surface of the glass substrate includes: Laser-induced deep etching is used to form a through hole on the glass substrate, which extends from the first surface of the glass substrate to the second surface.

[0011] In a possible implementation, the step of placing the first conductive base layer on a carrier, and bonding a side of the first conductive base layer away from the conductive pillars to the carrier includes: bonding an adhesive layer on the carrier; A release layer is bonded to one side of the first conductive base layer, wherein the release layer comprises a photosensitive material; The release layer and the adhesive layer are connected to connect the first conductive base layer and the carrier.

[0012] In a possible implementation, the step of providing a first conductive base layer and forming a plurality of conductive pillars on one side of the first conductive base layer includes: coating a photoresist on the first conductive base layer; forming an opening on the photoresist by photolithography to expose an area where the conductive pillar is to be formed; forming the conductive pillar in the opening by electroplating; Remove the photoresist.

[0013] Based on the same inventive concept, the present application also provides a chip packaging structure, which includes a glass substrate with conductive through holes made by any of the aforementioned methods for making a glass substrate with conductive through holes; the chip packaging structure also includes a chip arranged on the glass substrate with conductive through holes.

[0014] Compared with the prior art, this application has the following beneficial effects: The present application provides a method for manufacturing a glass substrate with a conductive through-hole. By using a conductive column as an electroplating seed, a filling layer is directly formed in the through-hole. This solves the problem that it is difficult to use physical vapor deposition to deposit a metal seed layer in the middle of the through-hole when the aspect ratio of the through-hole is too high, and improves the filling quality of the subsequent filling layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 A schematic diagram of the steps of a method for manufacturing a glass substrate with conductive through holes provided in this embodiment; Figure 2 This is a schematic diagram of a process for manufacturing a glass substrate with conductive through holes provided in this embodiment; Figure 3 This is a second flow chart of the method for manufacturing a glass substrate with conductive through holes provided in this embodiment; Figure 4 The third flow chart of the method for manufacturing a glass substrate with conductive through holes provided in this embodiment; Figure 5 This is a fourth flow chart of the method for manufacturing a glass substrate with conductive through holes provided in this embodiment; Figure 6 A schematic flow chart of a method for manufacturing a conductive column and a method for connecting a carrier provided in this embodiment.

[0017] Icons: glass substrate-100; first surface-110; second surface-120; through hole-101; straight through hole-101(a); V-shaped through hole-101(b); X-shaped through hole-101(c); inner diameter of straight through hole-D1; minimum inner diameter of V-shaped through hole-D2; waist hole diameter of X-shaped through hole-D3; first conductive base layer-200; conductive column-300; filling layer-400; second conductive base layer-500; carrier-910; adhesion layer-920; release layer-930. DETAILED DESCRIPTION

[0018] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0019] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in the present application without creative work are within the scope of protection of the present application.

[0020] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0021] In the description of this application, it should be noted that the terms "upper" and "lower" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or the orientations or positional relationships in which the product of this application is typically placed when in use. These terms are intended solely to facilitate the description of this application and simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first" and "second" and the like are used solely for distinction and should not be construed as indicating or implying relative importance.

[0022] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0023] It should also be noted that, in the description of this application, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0024] It should be noted that, in the absence of conflict, different features in the embodiments of the present application can be combined with each other.

[0025] The inventors have discovered that, currently, the processing of glass substrates with conductive through-holes is mainly achieved by the following steps. First, multiple through-holes are formed through the glass substrate using laser etching; then, a metal seed layer is formed on the inner wall of the through-hole; and finally, a conductive filling layer is formed in the glass through-hole by electroplating. However, when the aspect ratio of the through-hole is too high, it is very difficult to use physical vapor deposition (PVD) technology to form the metal seed layer. For example, when using PVD technology to form a metal seed layer on the inner wall of an X-shaped through-hole, the metal seed layer cannot be effectively formed at the waist position, which in turn prevents the subsequent filling layer from being successfully filled, ultimately affecting the product quality of the glass substrate with conductive through-holes.

[0026] In view of this, this embodiment provides a solution that can reduce the risk of the above-mentioned problem. The solution provided by this embodiment is described in detail below.

[0027] This application provides a method for manufacturing a glass substrate with conductive through holes. Figure 1 , the method includes the following steps.

[0028] In step S11 , a glass substrate 100 is provided. The glass substrate 100 includes a first surface 110 and a second surface 120 opposite thereto.

[0029] In step S12 , a plurality of through holes 101 are formed from the first surface 110 to the second surface 120 of the glass substrate 100 .

[0030] For example, the plurality of through holes 101 may be formed on the glass substrate 100 using laser induced deep etching.

[0031] In this step, through holes 101 of various shapes can be formed on the glass substrate 100. For example, straight through holes 101(a), V-shaped through holes 101(b), X-shaped through holes 101(c), and stepped through holes can be formed, all of which can be manufactured using the method for manufacturing a glass substrate with conductive through holes in this embodiment.

[0032] Step S13 , providing a first conductive base layer 200 , and forming a plurality of conductive pillars 300 on one side of the first conductive base layer 200 ; the diameter of the conductive pillars 300 is smaller than the minimum inner diameter of the through hole 101 .

[0033] In this step, the first conductive base layer 200 is used to be electrically connected to the plurality of conductive pillars 300 during electroplating, so as to grow a filling layer 400 covering the inner wall of the through hole 101 .

[0034] In step S14 , the first conductive base layer 200 is bonded to the glass substrate 100 so that the plurality of conductive pillars 300 are respectively located in the plurality of through holes 101 .

[0035] In this embodiment, after the first conductive base layer 200 is bonded to the glass substrate 100, the orthographic projections of the plurality of conductive pillars 300 on the first conductive base layer 200 are located within the orthographic projections of the plurality of through-holes 101 on the glass substrate 100 on the first conductive base layer 200. This allows the electroplated metal to grow from the conductive pillars 300 onto the inner walls of the plurality of through-holes 101 when the conductive pillars 300 serve as electroplating seeds.

[0036] In step S15 , the conductive pillars 300 are used as electroplating seeds to form a filling layer 400 covering the inner wall of the through hole 101 by electroplating.

[0037] In this embodiment, by using the conductive pillar 300 as an electroplating seed, a filling layer 400 is directly formed in the through hole 101, so that the through hole 101 with any aspect ratio can form a filling layer 400 covering the inner wall of the through hole 101, thereby improving the product quality of the glass substrate with conductive through holes.

[0038] In one possible implementation, please refer to Figure 2 Before executing step S13 , the method further includes: placing the first conductive base layer 200 on a carrier 910 , wherein a side of the first conductive base layer 200 away from the conductive pillar 300 is bonded to the carrier 910 .

[0039] Specifically, the first conductive base layer 200 and the carrier 910 may be bonded together by bonding adhesive.

[0040] Step S15 includes the following sub-steps.

[0041] In step S1511 , the filling layer 400 is formed on the first conductive base layer 200 and the conductive pillar 300 by electroplating, the filling layer 400 at least covering the inner wall of the through hole 101 .

[0042] Specifically, when performing electroplating, the electrolyte must first be prepared by selecting a corresponding formula according to the plating metal. For example, the conductive column 300 in the present application may include a copper conductive column 300, and the material of the filling layer 400 may include copper. Therefore, copper sulfate, sulfuric acid and additives can be used when plating copper, and the electrolyte is adjusted to a suitable pH value; then the first conductive base layer 200 is connected to the negative pole of the power supply as the cathode, and the anode material is connected to the positive pole; then the first conductive base layer 200, the glass substrate 100, etc. on the glass carrier 910 are immersed in the electrolyte, the magnetic stirrer is turned on, and the temperature, current density and other parameters are set to form the filling layer 400.

[0043] Step S1512 , releasing the bonding between the carrier 910 and the first conductive base layer 200 .

[0044] Specifically, the bonding glue between the carrier 910 and the first conductive base layer 200 may be made to lose its viscosity by laser scanning, thereby releasing the bonding between the carrier 910 and the first conductive base layer 200 .

[0045] Step S1513 : grinding the first conductive base layer 200 and a portion of the filling layer 400 so that the edge of the filling layer 400 exposed to the glass substrate 100 is flush with the first surface 110 and the second surface 120 of the glass substrate 100 .

[0046] Since the filling layer 400 will grow to the outside of the through hole 101 on the first surface 110 after electroplating, the first conductive base layer 200 and the filling layer 400 also need to be polished in this embodiment.

[0047] For example, a chemical mechanical polishing process can be used. First, a low-roughness grinding pad and an alkaline silica sol polishing liquid are used to coarsely grind the first conductive base layer 200 and the portion of the filling layer 400 extending beyond the first surface 110 of the glass substrate 100 to remove most of the metal. When the first conductive base layer 200 and the filling layer 400 are close to the surface of the glass substrate 100, a soft polishing pad and a non-abrasive polishing liquid containing hydrogen peroxide are used for fine polishing. At the same time, an optical interferometer can be used to monitor the change in the metal thickness of the first conductive base layer 200 and the filling layer 400. The process automatically stops when it is detected that the first conductive base layer 200 is completely removed and the edge of the glass substrate 100 is exposed.

[0048] In one possible implementation, please refer to Figure 2 The through hole 101 includes a straight through hole 101 ( a ). The diameter of the conductive pillar 300 is smaller than the inner diameter D1 of the straight through hole 101 ( a ).

[0049] In this embodiment, for a through hole 101 ( a ) with any aspect ratio, a filling layer 400 covering the inner wall of the through hole 101 ( a ) can be formed by the aforementioned method.

[0050] In one possible implementation, please refer to Figure 3 The through hole 101 includes a V-shaped through hole 101 ( b ), and the inner diameter of the V-shaped through hole 101 ( b ) gradually increases from the second surface 120 to the first surface 110 of the glass substrate 100 .

[0051] The diameter of the conductive pillar 300 is smaller than the inner diameter D2 of the V-shaped through hole 101 ( b ) on the second surface 120 of the glass substrate 100 .

[0052] In this embodiment, to prevent the electrolyte from being unable to enter the larger inner diameter portion of the V-shaped through hole 101 ( b ) due to the smaller inner diameter portion of the inner wall being filled with electroplating first, the diameter of the conductive pillar 300 is made smaller than the inner diameter D2 of the V-shaped through hole 101 ( b ) on the second surface 120 of the glass substrate 100 . At the same time, the second surface 120 of the glass substrate 100 having the V-shaped through hole 101 ( b ) is in contact with the first conductive base layer 200 .

[0053] In one possible implementation, please refer to Figure 4 , the through hole 101 is an X-shaped through hole 101 (c).

[0054] The diameter of the conductive pillar 300 is smaller than the waist diameter D3 of the X-shaped through hole 101 ( c ), and the height of the conductive pillar 300 does not exceed one third of the thickness of the glass substrate 100 .

[0055] In this embodiment, in order to prevent the electrolyte from being unable to enter the bottom of the waist of the X-shaped through hole 101 ( c ) due to being filled with electroplating first, the height of the conductive pillar 300 is controlled to be no more than one-third of the thickness of the glass substrate 100 when the conductive pillar 300 is grown on the first conductive base layer 200 .

[0056] In one possible implementation, please refer to Figure 5 The through hole 101 includes an X-shaped through hole 101 (c); wherein the X-shaped through hole 101 (c) is divided by its waist hole into a first part close to the first surface 110 of the glass substrate 100 and a second part close to the second surface 120 of the glass substrate 100.

[0057] The diameter of the conductive pillar 300 is smaller than the waist diameter D3 of the X-shaped through hole 101 ( c ).

[0058] In this embodiment, the height of the conductive pillar 300 does not need to be limited, and its diameter only needs to be smaller than the waist diameter D3 of the X-shaped through hole 101 ( c ).

[0059] Before executing step S13 , the method further includes: placing the first conductive base layer 200 on a carrier 910 , wherein a side of the first conductive base layer 200 away from the conductive pillars 300 is bonded to the carrier 910 .

[0060] Specifically, the first conductive base layer 200 and the carrier 910 may be bonded together by bonding adhesive.

[0061] Step S15 includes the following sub-steps.

[0062] In step S1521 , the filling layer 400 is formed on the first conductive base layer 200 and the conductive pillar 300 by electroplating, the filling layer 400 covering at least the first portion of the inner wall of the X-shaped through hole 101 ( c ).

[0063] In this step, since the conductive pillar 300 may be higher than the waist hole, during the first electroplating process, the X-shaped through hole 101 (c) may be filled first, resulting in the electrolyte being unable to enter the second portion of the X-shaped through hole 101 (c), so that only the first portion of the inner wall of the X-shaped through hole 101 (c) is covered by the filling layer 400.

[0064] Step S1522 , releasing the bond between the carrier 910 and the first conductive base layer 200 .

[0065] Specifically, the bonding glue between the carrier 910 and the first conductive base layer 200 may be made to lose its viscosity by laser scanning, thereby releasing the bonding between the carrier 910 and the first conductive base layer 200 .

[0066] Step S1523 , grinding the first conductive base layer 200 and a portion of the filling layer 400 so that the edge of the filling layer 400 exposed to the second surface 120 of the glass substrate 100 is flush with the second surface 120 of the glass substrate 100 .

[0067] In order to electroplating again so that the second portion of the X-shaped through hole 101 ( c ) is completely covered by the filling layer 400 , in this step, the first conductive base layer 200 is ground away to allow the electrolyte to penetrate.

[0068] Specifically, the first conductive base layer 200 and a portion of the filling layer 400 may be polished using a chemical mechanical polishing process so that the edge of the filling layer 400 exposed to the second surface 120 of the glass substrate 100 is flush with the second surface 120 of the glass substrate 100 .

[0069] After executing step S1523, since only the first part of the inner wall of the X-shaped through hole 101 (c) is covered by the filling layer 400 after the first electroplating, part of the inner wall of the second part is not covered by the filling layer 400, the following sub-steps are required.

[0070] Step S1524 : forming a second conductive base layer 500 on the first surface 110 of the glass substrate 100 by physical vapor deposition, wherein the second conductive base layer 500 is connected to the plurality of conductive pillars 300 .

[0071] In this step, a second conductive metal base layer 500 is formed on the first surface 110 of the glass substrate 100 using a physical vapor deposition (PVD) process. The conductive pillars 300 and the filling layer 400 formed by the first electroplating process serve as electroplating seeds. The second electroplating process completely covers the inner wall of the second portion of the X-shaped through hole 101(c) with the filling layer 400.

[0072] It should be noted that in this step, it is necessary to ensure that the second conductive base layer 500 formed by physical vapor deposition is continuous and has no cracks, and can be electrically connected to the multiple conductive pillars 300 on the original first conductive base layer 200, otherwise local unplated areas are easily formed during electroplating.

[0073] Step S1525 , forming the filling layer 400 covering at least the second portion of the inner wall of the through hole 101 on the second conductive base layer 500 by electroplating.

[0074] Specifically, during electroplating, the electrolyte solution is first prepared according to the corresponding formula of the plated metal, and then the second conductive base layer 500 is connected to the negative pole of the power supply as the cathode, and the anode material is connected to the positive pole; then, the glass substrate 100 and the second conductive base layer 500 on the glass substrate 100 are vertically immersed in the electrolyte solution, a magnetic stirrer is turned on, and parameters such as temperature and current density are set so that the second portion of the X-shaped through hole 101 (c) forms a filling layer 400 that at least covers the inner wall. Step S1526 , grinding the second conductive base layer 500 and a portion of the filling layer 400 so that the edge of the filling layer 400 exposed to the glass substrate 100 is flush with the first surface 110 and the second surface 120 of the glass substrate 100 .

[0075] Since the filling layer 400 will grow to the outside of the through hole 101 of the second surface 120 after electroplating, the second conductive base layer 500 and the filling layer 400 also need to be polished in this embodiment.

[0076] Specifically, the second conductive base layer 500 and a portion of the filling layer 400 on the second surface 120 of the glass substrate 100 may be polished using a chemical mechanical polishing process so that the edge of the filling layer 400 exposed to the glass substrate 100 is flush with the first surface 110 and the second surface 120 of the glass substrate 100 .

[0077] In a possible implementation, step S12 may use laser-induced deep etching to form a through hole 101 on the glass substrate 100 , extending from the first surface 110 of the glass substrate 100 to the second surface 120 .

[0078] Specifically, in this embodiment, laser-induced deep etching (LIDE) is used to form a through hole 101 extending from the first surface 110 to the second surface 120 on the glass substrate 100. First, a target pattern is designed on the glass substrate 100 based on the processing requirements for through hole 101, and then selective laser modification is performed using laser irradiation.

[0079] Then, an appropriate wet chemical etching solution is selected and the laser-modified glass substrate 100 is placed in the etching solution, so that the modified areas are etched while the unmodified areas are largely unaffected. During the etching process, the time the glass substrate 100 spends in the etching tank must be accurately controlled to ensure that the through hole 101 is formed with the structural dimensions required by the design.

[0080] After etching is completed, the processed glass substrate 100 may be cleaned and dried to remove residual etching solution and impurities.

[0081] The LIDE process can form through holes 101 with any aspect ratio and different shapes. On this basis, the method of the present application can form a filling layer 400 of good quality in the through holes 101 with any aspect ratio.

[0082] In one possible implementation, please refer to Figure 6 The step of placing the first conductive base layer 200 on the carrier 910 and bonding the side of the first conductive base layer 200 away from the conductive pillar 300 to the carrier 910 includes the following sub-steps.

[0083] An adhesive layer 920 is bonded onto the carrier 910 .

[0084] A release layer 930 is adhered to one side of the first conductive base layer 200 . The release layer 930 may be made of a photosensitive material.

[0085] The release layer 930 and the adhesive layer 920 are connected to connect the first conductive base layer 200 and the carrier 910 .

[0086] Specifically, when bonding the first conductive base layer 200 to the glass carrier 910, an adhesive layer 920 may be bonded to the carrier 910, and then a release layer 930 may be deposited on the first conductive base layer 200. Finally, the release layer 930 on the first conductive base layer 200 and the adhesive layer 920 on the carrier 910 are aligned and then placed in a vacuum bonding machine to form a secure bond, ensuring that the first conductive base layer 200 and the carrier 910 do not separate during processing.

[0087] Specifically, when achieving debonding between the glass carrier 910 and the first conductive base layer 200, the glass carrier 910 and the first conductive base layer 200 can be fixed in a laser release device, and the glass carrier 910 is uniformly irradiated with laser from the back side. The laser penetrates the glass carrier 910 and is absorbed by the release layer 930, forming a tiny gap at the interface of the release layer 930 to remove or reduce the adhesion between the release layer 930 and the first conductive base layer 200; finally, a vacuum suction cup can be used to peel the first conductive base layer 200 from the carrier 910.

[0088] In a possible implementation, step S13 includes the following sub-steps.

[0089] A photoresist is coated on the first conductive base layer 200 , so that the photoresist layer at least covers the first conductive base layer 200 .

[0090] An opening is formed in the photoresist by photolithography to expose an area where the conductive pillar 300 is to be formed.

[0091] In this step, the mask pattern is in the shape of the cross section of the conductive pillar 300 .

[0092] In other implementations of this embodiment, the cross-section of the conductive pillar 300 can also be other shapes besides a circle, as long as the orthographic projection of the conductive pillar 300 on the first conductive base layer 200 is located within the orthographic projection of the multiple through holes 101 of the glass substrate 100 on the first conductive base layer 200.

[0093] The conductive pillar 300 is formed in the opening by electroplating.

[0094] Remove the photoresist.

[0095] In a possible implementation, the conductive pillars 300 and the filling layer 400 are made of copper; and the first conductive base layer 200 and the second conductive base layer 500 are made of a conductive material.

[0096] Based on the same inventive concept, the present application also provides a chip packaging structure, which includes a glass substrate with conductive through holes made by any of the aforementioned methods for making a glass substrate with conductive through holes; the chip packaging structure also includes a chip arranged on the glass substrate with conductive through holes.

[0097] Since the aforementioned method for manufacturing a glass substrate with conductive through holes solves the problem of difficulty in depositing a metal seed layer in the middle of the through holes 101 using physical vapor deposition when the aspect ratio of the multiple through holes 101 in the glass substrate 100 is too high, the filling quality of the subsequent filling layer 400 is improved, thereby improving the product quality of the glass substrate with conductive through holes; therefore, the chip packaging structure in this embodiment also has good product quality.

[0098] In summary, the present application provides a method for manufacturing a glass substrate with conductive through-holes, the method comprising the following steps: providing a glass substrate 100, the glass substrate 100 comprising a first surface 110 and a second surface 120 opposite thereto; forming a plurality of through-holes 101 extending from the first surface 110 of the glass substrate 100 to the second surface 120; providing a first conductive base layer 200, and forming a plurality of conductive pillars 300 on one side of the first conductive base layer 200; the diameter of the conductive pillars 300 being smaller than the minimum inner diameter of the through-holes 101; bonding the first conductive base layer 200 to the glass substrate 100 so that the plurality of conductive pillars 300 are respectively located within the plurality of through-holes 101; and using the conductive pillars 300 as electroplating seeds to form a filling layer 400 covering the inner walls of the through-holes 101 by electroplating. This application uses the conductive column 300 as an electroplating seed to directly form a filling layer 400 in the through hole 101, thereby solving the problem that it is difficult to use physical vapor deposition to deposit a metal seed layer in the middle of the through hole 101 when the aspect ratio of the through hole 101 is too high, and improving the filling quality of the subsequent filling layer 400.

[0099] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0100] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A method for manufacturing a glass substrate with conductive through holes, characterized in that: The method comprises: Providing a glass substrate, the glass substrate comprising a first surface and a second surface opposite thereto; forming a plurality of through holes extending from the first surface to the second surface of the glass substrate; Providing a first conductive base layer, and forming a plurality of conductive pillars on one side of the first conductive base layer; the diameter of the conductive pillars is smaller than the minimum inner diameter of the through hole; Bonding the first conductive base layer to the glass substrate so that the plurality of conductive pillars are respectively located in the plurality of through holes; The conductive pillar is used as an electroplating seed to form a filling layer covering the inner wall of the through hole by electroplating.

2. The method according to claim 1, characterized in that Before performing the steps of providing a first conductive base layer and forming a plurality of conductive pillars on one side of the first conductive base layer, the method further includes: placing the first conductive base layer on a carrier, with a side of the first conductive base layer away from the conductive pillars being bonded to the carrier; The step of using the conductive pillar as an electroplating seed to form a filling layer covering the inner wall of the through hole by electroplating includes: forming the filling layer covering at least the inner wall of the through hole on the first conductive base layer and the conductive pillar by electroplating; releasing the bond between the carrier and the first conductive base layer; The first conductive base layer and a portion of the filling layer are ground so that an edge of the filling layer exposed to the glass substrate is flush with the first surface and the second surface of the glass substrate.

3. The method according to claim 2, characterized in that The through hole comprises a straight through hole; The diameter of the conductive pillar is smaller than the inner diameter of the through hole.

4. The method according to claim 2, characterized in that The through hole comprises a V-shaped through hole, wherein the inner diameter of the V-shaped through hole gradually increases from the second surface to the first surface of the glass substrate; The diameter of the conductive pillar is smaller than the inner diameter of the V-shaped through hole on the second surface of the glass substrate.

5. The method according to claim 2, characterized in that The through hole is an X-shaped through hole; The diameter of the conductive column is smaller than the waist diameter of the X-shaped through hole, and the height of the conductive column does not exceed one third of the thickness of the glass substrate.

6. The method according to claim 1, wherein The through hole comprises an X-shaped through hole; wherein the X-shaped through hole is divided by its waist hole into a first portion close to the first surface of the glass substrate and a second portion close to the second surface of the glass substrate; The diameter of the conductive column is smaller than the waist diameter of the X-shaped through hole; Before performing the steps of providing a first conductive base layer and forming a plurality of conductive pillars on one side of the first conductive base layer, the method further includes: placing the first conductive base layer on a carrier, with a side of the first conductive base layer away from the conductive pillars being bonded to the carrier; The step of using the conductive pillar as an electroplating seed to form a filling layer covering the inner wall of the through hole by electroplating includes: forming the filling layer covering at least the first portion of the inner wall of the through hole on the first conductive base layer and the conductive pillar by electroplating; releasing the bond between the carrier and the first conductive base layer; grinding the first conductive base layer and a portion of the filling layer so that an edge of the filling layer exposed to the second surface of the glass substrate is flush with the second surface of the glass substrate; forming a second conductive base layer on the first surface of the glass substrate by physical vapor deposition, wherein the second conductive base layer is connected to the plurality of conductive pillars; forming the filling layer covering at least the second portion of the inner wall of the through hole on the second conductive base layer by electroplating; The second conductive base layer and a portion of the filling layer are ground so that the edge of the filling layer exposed to the glass substrate is flush with the first surface and the second surface of the glass substrate.

7. The method according to claim 1, characterized in that The step of forming a through hole extending from the first surface to the second surface of the glass substrate comprises: Laser-induced deep etching is used to form a through hole on the glass substrate, which extends from the first surface of the glass substrate to the second surface.

8. The method according to claim 2, characterized in that The step of placing the first conductive base layer on a carrier, and bonding a side of the first conductive base layer away from the conductive pillar to the carrier comprises: bonding an adhesive layer on the carrier; A release layer is bonded to one side of the first conductive base layer, wherein the release layer comprises a photosensitive material; The release layer and the adhesive layer are connected to connect the first conductive base layer and the carrier.

9. The method according to claim 1, characterized in that The step of providing a first conductive base layer and forming a plurality of conductive pillars on one side of the first conductive base layer comprises: coating a photoresist on the first conductive base layer; forming an opening on the photoresist by photolithography to expose an area where the conductive pillar is to be formed; forming the conductive pillar in the opening by electroplating; Remove the photoresist.

10. A chip packaging structure, characterized in that: The chip packaging structure includes a glass substrate with conductive through holes manufactured by the method for manufacturing a glass substrate with conductive through holes according to any one of claims 1 to 9; the chip packaging structure also includes a chip arranged on the glass substrate with conductive through holes.

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