Wafer boat and furnace tube equipment

Abstract

The invention discloses a wafer boat and furnace tube equipment, the wafer boat is used for bearing multiple layers of substrates which are distributed at intervals in the vertical direction in the furnace tube equipment, and the wafer boat comprises a plurality of heaters which are distributed at intervals in the vertical direction; and the heater is configured to heat the middle area of the substrate when the wafer boat bears the substrate. According to the wafer boat, the temperature of the middle area of the substrate can be increased, and therefore the uniformity of the film forming thickness can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a crystal boat and furnace tube equipment. Background Art

[0002] like Figure 14 As shown, the heating device 5000' of the furnace tube equipment is arranged on the periphery of the liner tube 2000', and heat is transferred from the periphery of the liner tube 2000' to the inside of the liner tube 2000'. Under medium and low temperature process conditions, due to the heat loss in the transfer process, the temperature distribution on the substrate W inside the liner tube 2000' will be uneven, that is, the temperature of the outer circle area of ​​the substrate W is higher than the temperature of the middle area of ​​the substrate W. The uneven temperature distribution on the substrate W will cause uneven film thickness of the substrate W. Summary of the Invention

[0003] The present invention provides a wafer boat and furnace tube equipment, in order to overcome the problem in the prior art that the temperature of the outer circle area of ​​the substrate in the furnace tube equipment is higher than the temperature of the middle area of ​​the substrate, resulting in uneven film thickness.

[0004] The present invention solves the above technical problems through the following technical solutions:

[0005] A wafer boat is used for carrying multiple layers of substrates spaced apart in a vertical direction in a furnace tube device, comprising:

[0006] a plurality of heaters spaced apart along the vertical direction;

[0007] The heater is configured to heat a middle region of the substrate when the wafer boat carries the substrate.

[0008] A wafer boat is used for carrying multiple layers of substrates spaced apart in a vertical direction in a furnace tube device, comprising:

[0009] Multiple layers of air supply components are spaced apart along the vertical direction and are respectively arranged above and / or below the corresponding substrates;

[0010] The gas supply pipeline is connected to the multi-layer gas supply component and is used to provide gas to the multi-layer gas supply component.

[0011] A furnace tube device comprises: a process tube and a wafer boat as described above, wherein the wafer boat is arranged inside the process tube, and the side wall of the process tube is provided with multiple layers of exhaust ports along the vertical direction of the process tube, and each layer of exhaust ports corresponds to at least one layer of the air supply component.

[0012] The positive progress effect of the present invention is:

[0013] 1. By providing multiple heaters, the central region of the substrate can be heated. The wafer boat of the present invention can increase the temperature of the central region of the substrate, thereby improving the uniformity of the film thickness.

[0014] 2. By arranging gas supply components above and / or below each layer of substrate, the gas supply is more uniform and sufficient, and the uniformity of the gas atmosphere of different substrates is better, which is conducive to improving the film formation uniformity within the substrate surface and between different substrates.

[0015] 3. The furnace tube equipment provided by the present invention has a more uniform gas supply between different layers of substrates, and multiple layers of exhaust ports are provided in the process tube. Each layer of exhaust ports corresponds to the gas supply components of the corresponding layer, and the exhaust is also more uniform, thereby improving the uniformity of the deposited film on each layer of substrate inside the process tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Schematic diagram of a first layout structure of heaters in a wafer boat according to embodiment 1 of the present invention;

[0017] Figure 2 Schematic diagram of the installation structure of the heater in the wafer boat according to Example 1 of the present invention;

[0018] Figure 3 Schematic diagram of a second layout structure of heaters in a wafer boat according to embodiment 1 of the present invention;

[0019] Figure 4 Schematic diagram of a third layout structure of the heater in the wafer boat according to embodiment 2 of the present invention;

[0020] Figure 5A Schematic diagram of a fourth layout structure of the heater in the wafer boat according to embodiment 2 of the present invention;

[0021] Figure 5B Schematic diagram of the fifth layout structure of the heater in the wafer boat according to embodiment 2 of the present invention;

[0022] Figure 6 Schematic diagram of the sixth layout structure of the heater in the wafer boat according to embodiment 2 of the present invention;

[0023] Figure 7A Schematic diagram of the heater layout structure in the wafer boat according to Example 3 of the present invention;

[0024] Figure 7B Schematic diagram of the heater layout structure in the wafer boat according to Example 4 of the present invention;

[0025] Figure 8 Schematic diagram of the layout structure of the air supply components in the wafer boat according to Example 5 of the present invention;

[0026] Figure 9Schematic diagram of the structure of the air supply component in the wafer boat of Example 5 of the present invention;

[0027] Figure 10 Schematic diagram of the layout structure of the heater and air supply components of the wafer boat according to Example 6 of the present invention;

[0028] Figure 11 Schematic diagram of the layout structure of the heater and air supply components of the wafer boat according to Example 7 of the present invention;

[0029] Figure 12 This is a schematic structural diagram of a furnace tube device according to Example 8 of the present invention;

[0030] Figure 13 For the present invention Figure 12 A schematic structural diagram of the cross-sectional view at point B;

[0031] as well as

[0032] Figure 14 It is a structural diagram of the furnace tube equipment in the prior art. DETAILED DESCRIPTION

[0033] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples.

[0034] Example 1

[0035] like Figure 1 As shown, this embodiment provides a wafer boat for carrying substrates W in a furnace tube device, capable of heating the central region of the substrate W in a non-contact manner, thereby balancing the temperature difference between the central region of the substrate W and the outer region of the substrate W. The wafer boat includes a carrier body 100 and a heater 200. The carrier body 100 includes a multi-layer carrier 110 for carrying the substrate W, and the multi-layer carrier 110 is spaced apart along the vertical direction of the carrier body 100, with each layer of the carrier 110 carrying a substrate W. The heaters 200 are spaced apart along the vertical direction of the carrier body 100, and are arranged above and below the substrate W. The heaters 200 are configured to heat the central region of the substrate W when the substrate W is carried on the carrier 110.

[0036] exist Figure 1In the example shown, heaters 200 are provided above and below the carrier 110, with one heater 200 provided for every other layer of carrier 100, and the heaters 200 are aligned with the central region of the substrate W. The heaters 200 can heat the central region of each layer of substrate W. The heating device of the current furnace tube equipment is provided on the periphery of the furnace tube equipment, and heat is transferred from the periphery to the interior of the furnace tube equipment. During the film forming process, especially in the medium and low temperature (below 500°C) film forming process, the temperature of the central region of the substrate W will be lower than the temperature of the outer region of the substrate, resulting in an uneven temperature distribution within the substrate W, which will lead to an uneven film thickness within the substrate W. The wafer boat in this embodiment can increase the temperature of the central region of the substrate W, and the temperature of the heater can be adjusted by adjusting the output power of the heater 200, thereby balancing the temperature difference between the central region and the outer region of the substrate W, thereby improving the uniformity of the film thickness.

[0037] In this embodiment, the heater 200 is heated by a heating plate, and the heating surface of the heater 200 corresponds to the middle area of ​​the substrate W, mainly heating the middle area of ​​the substrate W by convection. Alternatively, heating wires may be used for heating.

[0038] like Figure 1 and Figure 2 The carrier body 100 includes a carrier 110 and a carrier column 120. The carrier 110 is connected to the carrier column 120 for carrying the substrate W. The heater 200 is connected to the carrier column 120 via a carrier plate 230. In other embodiments, the fixing method of the heater 200 is not limited to this, and the heater 200 can also be fixed to the carrier column 120 or to the carrier 110 by means of a connecting rod or the like.

[0039] In this embodiment, the power supply circuit 240 of the heater 200 is fixed to the outer peripheral surface of the supporting column 120. Preferably, the power supply circuit 240 is made of high temperature resistant material.

[0040] In other embodiments, a hollow supporting column may be used, and the power supply line 240 passes through the interior of the supporting column, making the layout of the line more compact.

[0041] Figure 1 In the embodiment, heaters 200 are disposed above and below the substrates W, that is, heaters 200 are disposed above and below each layer of substrates W. Each layer of substrates W has two corresponding heaters 200 to heat its upper and lower surfaces respectively, which can increase the heat supply to the middle area of ​​the substrates W and achieve better heating effect.

[0042] The arrangement of the heater 200 in the wafer boat is not limited to Figure 1 The heater 200 is arranged at intervals of one layer of substrate W. This embodiment also provides an interval arrangement. Figure 3 As shown, the heater 200 located between the two layers of substrates W can heat the two layers of substrates W at the same time. Therefore, the heater 200 can be arranged between two layers of substrates W, that is, between two layers of carriers 110. While ensuring that the middle area of ​​each layer of substrate W can be heated, the number of heaters 200 is greatly saved, which is conducive to reducing costs.

[0043] It should be noted that Figure 1 and Figure 3 The example shown is not intended to limit the number of substrate layers between adjacent heaters. For example, in some embodiments, a heater may be provided every three or more substrate layers, and adjacent heaters may jointly heat the middle region of the multi-layer substrate located therebetween.

[0044] In this embodiment, the wafer boat also includes a rotating device and brushes. A rotating device (not shown in the figure) is provided at the bottom of the wafer boat. The rotating device is used to drive the wafer boat to rotate. The power supply line 240 of the heater 200 is connected to the power supply of the heater 200 through the brushes.

[0045] In this embodiment, the wafer boat further includes a heat insulating sheet 300 , which is disposed at the bottom of the wafer boat to keep the wafer warm and reduce heat loss from the bottom of the wafer boat.

[0046] In this embodiment, a film layer will be deposited on the heater 200 during use. The heater 200 can be cleaned by periodically introducing a cleaning gas or by other cleaning methods.

[0047] Example 2

[0048] This embodiment is essentially the same as the first embodiment, differing in that the heater 200 in this embodiment utilizes radiant heating, such as an infrared radiant heater. Radiant heating has the following advantages: 1. High electrical heating efficiency; 2. Easier control of the heating range, enabling more precise heating of the central region of the substrate W; 3. Heat can penetrate the heated object, preventing intense heat exchange on the surface of the substrate W, thus preventing damage to the substrate W due to instantaneous overheating.

[0049] The layout of the heater 200 is related to the heating direction of the heater 200 .

[0050] like Figure 4 As shown, the heater 200 heats the upper surface of the substrate W from top to bottom. The heater 200 is disposed above the substrate W of the corresponding layer.

[0051] like Figure 5A As shown in FIG. 1 , the heater 200 heats the lower surface of the substrate W from bottom to top. The heater 200 is disposed below the substrate W of the corresponding layer.

[0052] like Figure 6 As shown, the heater 200 can heat in two directions at the same time. Therefore, the heater 200 can be arranged with two layers of substrates W between them. The heater 200 located between two adjacent layers of substrates W can heat the two layers of substrates W at the same time, thereby reducing the number of heaters 200.

[0053] Among them, Figure 5B As shown, when the heater 200 heats the lower surface of the substrate W, in order to prevent impurities on the lower surface of the upper substrate W from falling onto the lower substrate W, a partition 130 is further provided at the lower portion of the substrate W.

[0054] Example 3

[0055] The solution in this embodiment is basically the same as that in embodiment 1, except that Figure 7A As shown, in this embodiment, the heater 200 is connected to the carrier 110 along the horizontal direction A. Specifically, the heater 200 is disposed in the middle portion of the carrier 110. The carrier 110 secures the heater 200. The carrier 110 is connected to the supporting posts 120. When the carrier 110 carries a substrate W, the heater 200 is located in the middle portion of the carrier 110 and can correspond to the middle region of the substrate W. When the substrate W is placed on the carrier 110, the heater 200 corresponds to the middle region of the substrate W, enabling precise heating of the middle region of the substrate W.

[0056] In this embodiment, the upper surface of the heater 200 is at the same height as the upper surface of the carrier 110 . The middle region of the substrate W contacts the upper surface of the heater 200 and is heated mainly by heat conduction.

[0057] In some embodiments, if a thin film needs to be deposited on the lower surface of the substrate W, the heater 200 may also be disposed above the substrate W in a contact manner.

[0058] In other embodiments, the upper surface of the heater 200 may also be lower than the upper surface of the carrier 110. The substrate W is placed on the carrier 110, and the middle area of ​​the substrate W does not contact the heater 200. The heater 200 mainly heats the middle area of ​​the substrate W by convection or radiation.

[0059] Example 4

[0060] The solution in this embodiment is basically the same as that in embodiment 3, except that: Figure 7BAs shown, the wafer boat in this embodiment does not include a support member. The heater 200 is disposed below the central region of the substrate W in a contact manner, not only heating the central region of the substrate W but also supporting the substrate W. In this example, the heater 200 is fixed to the central portion of the wafer boat by a fixing member 210 , which is connected to the support column 120 and can be a connecting rod.

[0061] Example 5

[0062] like Figure 8 and Figure 9 As shown, this embodiment provides a wafer boat that can provide a more uniform and sufficient gas supply. The wafer boat includes a carrier body 100, a multi-layer gas supply component 400, and a gas supply pipeline. The carrier body 100 includes multi-layer carriers 110 for supporting substrates W. The multi-layer carriers 110 are spaced apart vertically along the carrier body 100. The multi-layer gas supply components 400 are spaced apart vertically along the carrier body 100 and are disposed above corresponding layers of substrates W. The gas supply pipeline is connected to the multi-layer gas supply components 400 to provide gas to each of the multi-layer gas supply components 400.

[0063] By placing the gas supply assembly 400 above the corresponding layer of substrates W, the gas supply is more uniform and sufficient, and the gas atmosphere surrounding the different layers of substrates W is more uniform, thereby improving the uniformity of the film layers on the different layers of substrates. The use of the wafer boat in this embodiment provides a more uniform gas distribution within the wafer boat, eliminating the need for a separate rotating device to rotate the wafer boat to improve gas distribution uniformity.

[0064] In other embodiments, the layout of the gas supply component 400 is not limited thereto. In some processes, the lower surface of the substrate W may also be coated, so the gas supply component 400 may also be arranged below the corresponding layer of substrate W.

[0065] In some embodiments, in order to ensure that the upper and lower film layers of the substrate have good uniformity, air supply components 400 may be provided above and below each layer of the substrate W.

[0066] In this embodiment, the air supply pipeline includes a main pipeline 511 and multiple branch pipelines 512. Each layer of the air supply component 400 is connected to the main pipeline 511 through a branch pipeline 512. The main pipeline 511 can be arranged on the outer periphery of the supporting column 120 of the supporting body 100.

[0067] In some embodiments, the supporting column 120 of the supporting body 100 may also be configured as a hollow structure, so the main line 511 may be disposed in the hollow structure of the supporting column 120. In addition, the main line 511 may be eliminated, and the air supply may be performed using the hollow supporting column.

[0068] A regulating valve 520 is provided on the branch pipe 512 corresponding to each layer of the gas supply component 400. The regulating valve 520 is used to adjust the gas flow rate of the branch pipe 512. The regulating valve 520 can control the gas flow rate of each layer of the gas supply component 400, thereby balancing the differences in gas flow rates between different layers, thereby making the gas supply between different layers more uniform, which is conducive to improving the uniformity of thin film deposition on substrates W at different layers.

[0069] In this embodiment, the gas supply component 400 corresponds to the middle area of ​​the substrate in the horizontal direction A, and supplies gas toward the substrate W and toward the periphery along the horizontal direction A (ie, a direction parallel to the substrate).

[0070] Specifically, if Figure 8 and Figure 9 As shown, the gas supply component 400 includes a hollow cavity 430, and the hollow cavity 430 is provided with an air inlet 440, which is connected to the gas supply pipeline (that is, the branch pipeline 512). A plurality of first gas supply holes 410 are arranged at intervals on the side of the hollow cavity 430 opposite to the substrate W, and a plurality of second gas supply holes 420 are arranged at intervals on the outer peripheral surface of the hollow cavity 430. The first gas supply hole 410 can supply gas toward the substrate W. The first gas supply hole 410 can supply gas perpendicular to the substrate W, or it can supply gas at a certain inclination angle to the substrate W. The second gas supply hole 420 supplies gas to the periphery along the horizontal direction A. By providing the first gas supply hole 410 and the second gas supply hole 420, it is beneficial to improve the gas supply diffusion effect of the gas supply component 400, so that the process gas is more evenly distributed in various areas of the substrate, which is beneficial to improve the uniformity within the substrate.

[0071] In other embodiments, only the first air supply hole 410 or only the second air supply hole 420 may be provided.

[0072] In some embodiments, the air supply component 400 is not limited to the above-mentioned form, and may also directly supply air through an air inlet pipe or adopt other structures capable of supplying air.

[0073] Example 6

[0074] This embodiment is basically the same as the solution in embodiment 5, except that, in this embodiment, Figure 10 As shown, the wafer boat also includes a plurality of heaters 200, which are spaced apart in the vertical direction of the carrier body 100 and are respectively arranged under the corresponding substrates W, and the heaters 200 are configured to heat the middle area of ​​the substrate W when the substrate W is carried on the carrier 110.

[0075] Example 7

[0076] This embodiment provides a wafer boat, which has a structure substantially the same as that of the wafer boat in embodiment 6, except that it adopts the structure and layout of the heater 200 in embodiment 3. Figure 11 As shown, the multiple layers of air supply components 400 of the wafer boat are distributed at intervals along the vertical direction of the carrier body 100 .

[0077] In some embodiments, the layout of the heaters may also be adaptively modified as needed, and reference may be made to the layout of the heater 200 in the above embodiment.

[0078] Example 8

[0079] like Figure 12 and Figure 13 As shown, this embodiment provides a furnace tube device, which includes: a process tube 2000 and a crystal boat in any of the above embodiments. Taking the crystal boat in Example 5 as an example, the crystal boat 1000 is arranged inside the process tube 2000, and the supporting parts 110 are distributed at intervals along the vertical direction L of the process tube 2000. The side wall of the process tube 2000 is provided with multiple layers of exhaust ports 2100 along the vertical direction L, and each layer of exhaust ports 2100 corresponds to a layer of air supply components 400.

[0080] The configuration of multiple layers of gas supply components 400 in the wafer boat can make the gas supply between different layers of substrates W more uniform, and multiple layers of exhaust ports 2100 are set in the process tube 2000. Each layer of exhaust ports 2100 corresponds to the gas supply components 400 of the corresponding layer, and the exhaust is also more uniform, thereby improving the uniformity of the deposited film on each layer of substrate W inside the process tube 2000.

[0081] In other embodiments, each layer of exhaust ports 2100 on the process tube 2000 may also correspond to multiple layers of gas supply components 400 , thereby reducing the number of layers of exhaust ports 2100 .

[0082] like Figure 13 As shown, in this embodiment, each layer of exhaust ports 2100 includes a plurality of openings 2110 spaced circumferentially. The air supply component 400 is also provided with a plurality of second air supply holes 420 spaced circumferentially. The plurality of second air supply holes 420 located on the same layer correspond to the plurality of openings 2110. In some embodiments, the openings 2110 may also be staggered with the second air supply holes 420 in the circumferential direction of the same layer.

[0083] In this embodiment, the furnace tube equipment further includes:

[0084] The liner pipe 3000 is sleeved on the outside of the process pipe 2000.

[0085] The heating assembly 5000 is arranged on the outside of the liner tube 3000 and is used to heat the liner tube 3000.

[0086] Furthermore, the furnace tube equipment further includes an air pump 4000. The liner tube 3000 is provided with an air extraction port, and the air pump 4000 is arranged at the air extraction port. The air pump 4000 can extract excess gas.

[0087] In other embodiments, the liner 3000 is provided with a plurality of spaced apart exhaust ports along the circumference, and an air pump 4000 is provided at each exhaust port, which is beneficial to improving the exhaust efficiency and the uniformity of gas distribution.

[0088] In this embodiment, a film layer will be deposited on the gas supply component 400 during use. Cleaning gas can be introduced into the gas supply component 400 regularly to clean it, or other cleaning methods can be used to clean it.

[0089] Although the above describes specific embodiments of the present invention, it should be understood by those skilled in the art that these are merely illustrative and that the scope of protection of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but such changes and modifications fall within the scope of protection of the present invention. In addition, certain features, structures, or characteristics in one or more embodiments of the present application may be appropriately combined.

Claims

1. A wafer boat for carrying multi-layer substrates spaced apart in a vertical direction in a furnace tube device, characterized in that: include: a plurality of heaters spaced apart along the vertical direction; The heater is configured to heat a middle region of the substrate when the wafer boat carries the substrate.

2. The wafer boat according to claim 1, wherein: The heater is arranged opposite to the middle area of ​​the substrate, and the heater is configured above or below the adjacent substrate in a contact or non-contact manner.

3. The wafer boat according to claim 1, wherein: The heater is provided for every at least one layer of the substrate.

4. The wafer boat according to claim 1, wherein: The system further comprises a carrying body, wherein the carrying body comprises multi-layer carrying members for carrying the multi-layer substrate, and the multi-layer carrying members are distributed at intervals along the vertical direction of the carrying body.

5. The wafer boat according to claim 1, wherein: The heater adopts radiation heating.

6. The wafer boat according to claim 1, wherein: It also includes a rotating device and a brush. The rotating device is arranged at the bottom of the wafer boat and is used to drive the wafer boat to rotate. The power supply line of the heater is connected to the power supply of the heater through the brush.

7. A furnace tube device, characterized in that: It includes the wafer boat according to any one of claims 1 to 6.

8. A wafer boat for carrying multi-layer substrates spaced apart in a vertical direction in a furnace tube device, characterized in that: It includes: Multiple layers of air supply components are spaced apart along the vertical direction and are respectively arranged above and / or below the corresponding substrates; The gas supply pipeline is connected to the multi-layer gas supply component and is used to provide gas to the multi-layer gas supply component.

9. The wafer boat according to claim 8, wherein: The gas supply component corresponds to the middle area of ​​the substrate.

10. The wafer boat according to claim 8 or 9, wherein: The gas supply component supplies gas toward the substrate, and / or the gas supply component supplies gas toward the periphery in a direction parallel to the substrate.

11. The wafer boat according to claim 10, wherein: The air supply component includes a hollow cavity, the hollow cavity is provided with an air inlet, the air inlet is connected to the air supply pipeline, a plurality of first air supply holes are spaced apart on a surface of the hollow cavity opposite to the substrate, and / or a plurality of second air supply holes are spaced apart on an outer peripheral surface of the hollow cavity.

12. The wafer boat according to claim 8, wherein: A regulating valve is arranged between the air supply component and the air supply pipeline on each layer, and the regulating valve is used to adjust the air supply flow of the corresponding air supply component.

13. The wafer boat according to claim 8, wherein: Also includes: A plurality of heaters are distributed at intervals along the vertical direction, and the heaters are configured to heat a middle region of the substrate when the wafer boat carries the substrate.

14. The wafer boat according to claim 13, wherein: The heater is arranged opposite to the middle area of ​​the substrate, and the heater is configured above or below the adjacent substrate in a contact or non-contact manner.

15. A furnace tube device, characterized in that: It includes: a process tube and a wafer boat as described in any one of claims 8-14, wherein the wafer boat is arranged inside the process tube, and the side wall of the process tube is provided with multiple layers of exhaust ports along the vertical direction of the process tube, and each layer of exhaust ports corresponds to at least one layer of the air supply component.

16. The furnace tube equipment according to claim 15, characterized in that Each layer of exhaust ports includes a plurality of openings spaced circumferentially.

17. The furnace tube equipment according to claim 16, characterized in that The multiple layers of air supply components correspond to the multiple layers of exhaust ports one by one. A plurality of second air supply holes are arranged at circumferential intervals on each layer of the air supply components. The plurality of second air supply holes on the corresponding layer correspond to the plurality of openings.

18. The furnace tube equipment according to claim 15, characterized in that Also includes: A liner pipe is sleeved on the outside of the process pipe; A heating component is arranged on the outside of the liner and is used to heat the liner.

19. The furnace tube equipment according to claim 18, characterized in that The liner is provided with a plurality of spaced air pumping ports along the circumference, and an air pump is provided at each air pumping port.

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