Power module, motor controller comprising same, driving assembly and vehicle

Abstract

The invention provides a power module, a motor controller comprising the power module, a driving assembly and a vehicle, and belongs to the technical field of vehicle driving control. The power module comprises a driving sub-module and a power generation sub-module, comprising a driving sub-module and a power generation sub-module, the driving sub-module comprises a first converter bridge circuit configured to be connected with a driving motor; the power generation sub-module comprises a second lining plate and a second converter bridge circuit arranged on the second lining plate; the second converter bridge circuit is configured to be connected with a generator. According to the power module provided by the embodiment of the invention, the integration of the driving module and the power generation module is realized.

Description

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on March 7, 2025, with application number 202510276828.8, and invention name “Power module and motor controller, drive assembly and vehicle containing the same”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of vehicle drive control, and in particular, to a power module and a motor controller, a drive assembly, and a vehicle including the same. Background Art

[0003] With the advancement of industry, hybrid vehicles are becoming increasingly popular among users because they combine the advantages of traditional fuel vehicles with those of new energy vehicles. The drive module and power generation module are important systems in the electronic control system of hybrid vehicles.

[0004] To meet the performance requirements of hybrid vehicles, the prior art uses a split architecture to design the drive module and power generation module as two independent modules. The production, installation, fixation, and assembly processes of the two independent modules need to be considered in the design of the overall control system. The prior art uses independent half-bridge modules to construct the drive module and power generation module, which results in a larger total volume for the drive module and power generation module, and a longer housing design along the direction of the independent half-bridge arrangement. Furthermore, the size of the drive module and power generation module determines the area of ​​the printed circuit board (PCB). In traditional processes, the PCB needs to be assembled on the power module, so the area and shape of the PCB must be adapted to the power module. At the same time, the presence of auxiliary circuits in the electronic control module further increases the size of the PCB, at least larger than the size of the power module. Furthermore, the increased area of ​​the drive module and power generation module also leads to problems such as greater flow resistance to the module from the water channel structure of the heat dissipation structure, strict sealing requirements, high cost, and low space utilization.

[0005] Therefore, there is an urgent need to optimize module design to reduce the size of modules and electronic controls and reduce the cost of electronic control systems. Summary of the Invention

[0006] To solve the technical problem of the large total volume of the electric control system of a hybrid electric vehicle in the prior art, an embodiment of the present application provides a power module and a motor controller, a drive assembly and a vehicle including the same.

[0007] In a first aspect, an embodiment of the present application provides a power module, comprising: a driver submodule and a power generation submodule;

[0008] The driving submodule includes a first current converter bridge circuit configured to be connected to the driving motor;

[0009] The power generation submodule includes a second lining plate and a second current conversion bridge circuit provided on the second lining plate; the second current conversion bridge circuit is configured to be connected to the generator.

[0010] Optionally, the second current conversion bridge circuit is a multi-phase circuit; at least two bridge arms of the second current conversion bridge circuit are arranged on the same second lining board.

[0011] Optionally, the second current conversion bridge circuit is a three-phase circuit; the three bridge arms of the second current conversion bridge circuit are arranged on the same second lining board.

[0012] Optionally, the second current conversion bridge circuit is a multi-phase circuit; the second current conversion bridge circuit includes at least one active switch chip and at least one passive freewheeling chip;

[0013] In at least one bridge arm of the second current conversion bridge circuit, a ratio of a total area of ​​the passive freewheeling chips to a total area of ​​the active switch chips satisfies a first ratio, and the first ratio is greater than or equal to 0.6.

[0014] Optionally, the first ratio is greater than or equal to 1.

[0015] Optionally, the first ratio is less than or equal to 2.

[0016] Optionally, the first ratio is less than or equal to 1.2.

[0017] Optionally, in at least one bridge arm of the second current conversion bridge circuit, at least some of the passive freewheeling chips and at least some of the active switch chips are arranged in pairs.

[0018] Optionally, the area ratio of at least one pair of the passive freewheeling chips arranged in pairs to the active switch chip satisfies the first ratio.

[0019] Optionally, at least one bridge arm of the second current conversion bridge circuit is configured to consist of two active switch chips and two passive freewheeling chips.

[0020] Optionally, the liner includes a substrate; one side surface of the substrate includes at least one conductor covering area; the at least one conductor covering area includes a first conductor covering area and a second conductor covering area insulated from each other; each of the at least one bridge arm of the second converter bridge circuit includes an upper bridge arm and a lower bridge arm;

[0021] Among them, the active switch chip and the passive freewheeling chip in the upper bridge arm of at least two bridge arms of the second current conversion bridge circuit are electrically connected to the first conductor covering area; the active switch chip and the passive freewheeling chip in the lower bridge arm of at least two bridge arms of the second current conversion bridge circuit are electrically connected to the second conductor covering area.

[0022] Optionally, the first conductor coverage area and the second conductor coverage area are arranged at intervals.

[0023] Optionally, the power module further includes a temperature sensor; and all bridge arms in the second converter bridge circuit share the same temperature sensor.

[0024] Optionally, in at least one bridge arm of the second converter bridge, the active switch chip and the passive freewheeling chip in the upper bridge arm are offset along a first direction relative to the active switch chip and the passive freewheeling chip in the lower bridge arm, and the temperature sensor is provided at the end of the second lining plate opposite to the first direction.

[0025] Optionally, the power module further includes a heat dissipation module; and the driving sub-module and the power generation sub-module share the same heat dissipation module.

[0026] Optionally, the heat dissipation module includes a cooling substrate and heat dissipation fins; the heat dissipation fins are located on a first surface of the cooling substrate; and a second surface of the cooling substrate is connected to the power generation submodule and the driving submodule.

[0027] Optionally, along a direction perpendicular to the cooling substrate, an arrangement density of the heat dissipating fins within a projection range of the driving sub-module is greater than an arrangement density of the heat dissipating fins within a projection range of the power generating sub-module.

[0028] Optionally, the first current conversion bridge circuit is a multi-phase circuit; the first current conversion bridge circuit includes a plurality of bridge arms; and the plurality of bridge arms are respectively arranged on a plurality of independent first lining plates.

[0029] Optionally, at least one bridge arm of the first current conversion bridge circuit is configured to consist of 4 active switch chips and 4 passive freewheeling chips.

[0030] Optionally, the thermal conductivity of the first lining plate is greater than 27 W / m·K.

[0031] Optionally, the first liner includes a silicon nitride ceramic substrate, an aluminum nitride ceramic substrate or an aluminum oxide ceramic substrate.

[0032] Optionally, the driving submodule and the power generation submodule share the same frame. In a second aspect, an embodiment of the present application further provides a motor controller, comprising the power module as described in any of the above embodiments.

[0033] In a third aspect, an embodiment of the present application further provides a drive assembly comprising a power module as described in any of the above embodiments.

[0034] In a fourth aspect, an embodiment of the present application further provides a vehicle, characterized in that it comprises a power module as described in any of the above embodiments.

[0035] The power module, motor controller, drive assembly, and vehicle including the same provided in the embodiments of the present application achieve at least the following beneficial effects:

[0036] The power module provided in this application utilizes an integrated design, wherein the driver submodule includes a first current-converting bridge circuit, and the power generation submodule includes a second liner and a second current-converting bridge circuit disposed on the second liner. Compared to power generation modules composed of independent half-bridges, the power generation submodule of this application utilizes a second current-converting bridge circuit disposed on the second liner, reducing the dimensions along the alignment of the power generation and driver modules, resulting in a smaller overall volume for the entire power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0038] Figure 1 A schematic diagram of the topology of an extended-range vehicle is shown;

[0039] Figure 2 The topological structure diagram of the driving module and the power generation module in the prior art is shown;

[0040] Figure 3 The schematic diagram of the structure of the driving module and the power generation module in the prior art is shown;

[0041] Figure 4 An optional structural diagram of a power module provided in an embodiment of the present application is shown;

[0042] Figure 5 An optional calculation method for the relationship between the power generation efficiency and chip area of ​​a power generation submodule provided in an embodiment of the present application is shown;

[0043] Figure 6 (a) shows the relationship between the on-state current and the voltage drop of the active switch chip. Figure 6 (b) shows the linear fitting of the on-state current and voltage drop of the active switch chip;

[0044] Figure 7 (a), (b), and (c) show the magnification factors of coefficients a, b, and c, respectively;

[0045] Figure 8 (a), (b), (c), and (d) show the coefficients a and fwd 、b fwd 、a rvs and b rvs Relationship with chip area;

[0046] Figure 9The figure shows the relationship between power generation efficiency and chip area calculated based on actual working conditions.

[0047] Figure 10 shows another optional side view of the power module provided in an embodiment of the present application;

[0048] Figure 11 Schematic diagram showing another optional structure of the power module provided in the embodiment of the present application;

[0049] Figure 12 An optional structural diagram of a heat dissipation module provided in an embodiment of the present application is shown;

[0050] Figure 13 A schematic diagram showing another optional structure of the heat dissipation module provided in an embodiment of the present application is shown;

[0051] Figure 14 An optional structural diagram of a DC terminal provided in an embodiment of the present application is shown;

[0052] Figure 15 An optional structural diagram of a DC terminal provided in an embodiment of the present application is shown;

[0053] Figure 16 An optional structural diagram of a DC terminal provided in an embodiment of the present application is shown;

[0054] Figure 17 A schematic diagram showing another optional structure of the power module provided in an embodiment of the present application is shown.

[0055] The reference numerals in the figures represent:

[0056] 1- driver module; 11- half-bridge unit; 2- generator module; 21- rectifier bridge; 211- active switch chip; 212- passive freewheeling chip; 3- DC terminal; 31- first terminal; 32- second terminal; 311- first section terminal; 312- second section terminal; 321- third section terminal; 322- fourth section terminal; 323- fifth section terminal; 4- AC terminal; 5- liner; 51- substrate; 52- first copper layer; 53- second copper layer; 54- chip solder layer; 55- liner solder layer; 6- signal terminal; 7- heat dissipation module; 71- cooling substrate; 72- heat dissipation fin pin; 73- base; 74- fluid channel; 8- capacitor; 81- third terminal; 82- fourth terminal; 9- magnetic core; 10- temperature measuring resistor; 11- frame. DETAILED DESCRIPTION

[0057] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0059] New energy vehicles include electric drive assemblies, which use electricity to drive the vehicle. Taking the extended-range new energy vehicle as an example, its topology is as follows: Figure 1 The core component is the range extender. Its main function is to activate the range extender when the power battery's charge drops below a certain level, allowing the engine to drive the generator to generate electricity. Part of this generated electricity is used to power the drive motor, while the rest is used to charge the power battery.

[0060] Extended-range new energy vehicles offer numerous advantages, including the ability to run purely on electricity for daily urban commuting, resulting in zero emissions and reduced tailpipe pollution, thus meeting environmental standards. Furthermore, electric drive is more energy-efficient than fuel-powered vehicles, reducing energy consumption and operating costs.

[0061] Extended-range electric vehicles are equipped with an engine as a range extender. When the battery power is low, the engine can start to generate electricity to provide continuous power for the vehicle, avoiding the range anxiety problem caused by the limited cruising range of pure electric vehicles and making long-distance travel more convenient.

[0062] In addition, extended-range new energy vehicles also have the following advantages in driving experience:

[0063] Pure Electric Drive: The extended-range topology is essentially a pure electric drive system. The vehicle's driving force is entirely provided by the electric motor. The engine does not directly drive the vehicle, but rather acts as a generator. When the battery is low, it starts to convert fuel into electricity to power the electric motor or charge the battery. This pure electric drive method ensures a single, pure power source, consistent with the drive method of pure electric vehicles, and fundamentally ensures a comfortable driving experience.

[0064] Rapid Power Response: The characteristics of electric motors dictate their ability to deliver maximum torque instantaneously. In a range-extended vehicle, when the driver presses the accelerator, the electric motor responds instantly, delivering powerful power for rapid starts and acceleration. This immediate power response far surpasses that of traditional fuel vehicles, providing the driver with a more direct and powerful sense of push, making it easy to handle frequent starts and stops in urban areas or overtaking on highways, delivering a smooth driving experience.

[0065] No power interruptions: Since the extended-range vehicle is constantly driven by the electric motor, there are no power interruptions during gear shifts, as is the case with traditional fuel-powered vehicles. Power delivery remains continuous and smooth, whether at low or high speeds. Even when the battery is low and the engine starts generating power, the system's sophisticated control strategy ensures that the electric motor's power output is not affected, preventing any jerks or power interruptions. This provides the driver with a consistent and stable driving experience, enhancing both comfort and safety.

[0066] However, in existing technologies, the electric drive assembly of an extended-range new energy vehicle (EREV) includes components such as a generator, a drive motor, a generator controller, and a drive motor controller. The generator controller and the drive motor controller are independent components, each with its own power block (for example, using diode semiconductors, IGBT semiconductors, or SiC semiconductors for AC / DC conversion), current sensor, temperature sensor, and motor rotor position sensor. These components are relatively heavy, bulky, and costly, necessitating optimization.

[0067] Figure 2 The topological structure diagram of the drive module and power generation module of the existing extended-range new energy vehicle is shown. Figure 2 The drive module converts the DC power from the high-voltage battery into AC power to drive the drive motor, providing torque to rotate the wheels. The power generation module converts the AC power output from the generator into DC power to charge the high-voltage battery or power the drive motor. Figure 2 The power generation module shown in the example is a three-phase full-bridge circuit; the driving module is three independent half-bridges, which can also be regarded as forming a three-phase full-bridge circuit. Figure 2 The power generation module / drive module provided in this application (taking a three-phase full bridge as an example) includes three bridge arms (or bridge arm groups), each bridge arm includes an upper bridge arm and a lower bridge arm, and the upper bridge arm and the lower bridge arm respectively include an active switch chip and a passive freewheeling chip connected in reverse parallel thereto. Figure 2Only one optional connection method between the wheel and the drive motor is shown. In some exemplary embodiments, the wheel is directly connected to the drive motor. In other exemplary embodiments, a single-speed reducer or reduction gear is coupled between the wheel and the drive motor.

[0068] Figure 3 The schematic diagram of the structure of the drive module and power generation module of the existing extended-range new energy vehicle is shown. Figure 3 As shown, existing drive modules and power generation modules both use half-bridge modules as their smallest unit. The three half-bridge modules from the left are drive modules, and the three half-bridge modules from the right are power generation modules. The half-bridge modules here are the bridge arms mentioned above, and each half-bridge module (i.e., each bridge arm) corresponds to a phase in a multi-phase full-bridge circuit (e.g., a three-phase full-bridge circuit). As can be seen, the length of the half-bridge modules increases along their arrangement. In the prior art, drive modules and power generation modules each have independent heat dissipation backplanes. Because hybrid vehicles require simultaneous accommodation of components such as the engine, generator, electronic control system, battery, fuel tank, and transmission system, interior space is limited. Simply packaging the drive module and power generation module together without reducing their size will not reduce the space required within the vehicle, but may instead result in greater space waste and fail to reduce production costs. Therefore, integrating the drive module and power generation module requires not only integration but also miniaturization.

[0069] The inventors of this application unexpectedly discovered that the balance between the operating conditions and power generation efficiency of the power generation module is an important factor restricting the miniaturization of the power generation module in hybrid vehicles, and thus restricting the integration of the drive module and the power generation module.

[0070] In view of this, if Figure 4 As shown, an embodiment of the present application provides a power module. The power module includes a driving submodule and a power generation submodule. The driving submodule includes a first current conversion bridge circuit configured to be connected to the driving motor; the power generation submodule includes a second lining plate, and a second current conversion bridge circuit provided on the second lining plate, and the second current conversion bridge circuit is configured to be connected to the power generation motor. It can be understood that the first current conversion bridge circuit and the second current conversion bridge circuit are collectively referred to as current conversion bridges in this article. In this way, the integration of the driving submodule and the power generation submodule is achieved. Since the driving submodule plays an inverting role when controlling the driving motor, the first current conversion bridge circuit will also be referred to as an inverter bridge in the following text; since the power generation submodule plays a rectifying role when controlling the generator, the second current conversion bridge circuit will also be referred to as a rectifier bridge in the following text.

[0071] According to some optional embodiments, the second converter bridge circuit is a multi-phase circuit, and at least two bridge arms of the second converter bridge are provided on the same second lining plate. In this way, the integration and miniaturization of the power generation submodule are achieved, thereby facilitating the integration of the power generation submodule and the driver submodule. For example, Figure 4 As shown, the second current conversion bridge circuit is a three-phase circuit, and the three bridge arms of the second current conversion bridge circuit are arranged on the same second lining board.

[0072] Specifically, taking the power module (drive module or power generation module) using an insulated gate bipolar transistor (IGBT) as an example, it includes an IGBT chip and a fast recovery diode (FRD) chip. When the IGBT chip is used as an active switch tube, switching loss and conduction loss will be generated. At this time, there is no loss to the IGBT, but the FRD will generate conduction loss and reverse recovery loss. For the drive module, the output current capability is mainly considered. According to the distribution of operating loss ratio, IGBT loss accounts for about 70%; FRD loss accounts for about 30%. For the power generation module, while meeting the output current capability, it is also necessary to pay attention to power generation efficiency. Under power generation conditions, IGBT loss accounts for 30% and FRD loss accounts for 70%. This leads to different design requirements for the drive module and the power generation module in different application scenarios. The inventors found that the wide operating condition coverage and high dynamic load requirements of the drive module make it difficult to miniaturize it. The power generation module has a single driving condition, pursues steady-state output, and has a lower dynamic response requirement. Therefore, the miniaturization of the power generation module is the key to the integration of the drive module and the power generation module.

[0073] In view of this, in the power module provided in an embodiment of the present application, the second current conversion bridge circuit is a multi-phase circuit. The second current conversion bridge circuit includes at least one active switch chip and at least one passive freewheeling chip. In at least one bridge arm of the second current conversion bridge circuit, the ratio of the total area of ​​the passive freewheeling chips to the total area of ​​the active switch chips satisfies a first ratio, and the first ratio is greater than or equal to 0.6. This can reduce the loss of the second current conversion bridge in the power generation submodule under power generation conditions, allowing the second current conversion bridge to use a smaller chip area and reducing the number of chips used in the current conversion bridge.

[0074] Optionally, in at least one bridge arm of the second converter bridge circuit, at least some of the passive freewheeling chips are arranged in pairs with at least some of the active switch chips. For example, one active switch chip is arranged in pairs with multiple passive freewheeling chips. For another example, multiple active switch chips are arranged in pairs with one passive freewheeling chip. For another example, multiple active switch chips are arranged in pairs with multiple passive freewheeling chips. According to an embodiment of the present application, the area ratio of at least one pair of passive freewheeling chips and active switch chips in the second converter bridge circuit satisfies a first ratio. When the power generation sub-module is in power generation operation, the ratio of the total area of ​​the passive freewheeling chips of at least one bridge arm to the total area of ​​the active switch chips satisfies the first ratio, the converter bridge loss of the power generation sub-module is reduced, and chips with smaller areas can be used. It can also occupy a smaller area while the chip area of ​​the converter bridge remains unchanged, which is beneficial to the integration of the power generation sub-module. For example, Figure 4 As shown, at least one bridge arm of the second converter bridge provided in an embodiment of the present application is composed of two active switch chips 214 and two passive freewheeling chips 215. Because the total area of ​​the passive freewheeling chips in at least one bridge arm of the converter bridge provided in an embodiment of the present application meets a first ratio to the total area of ​​the active switch chips, the losses of the converter bridge under power generation conditions are reduced, allowing at least two bridge arms of the converter bridge to be integrated on the same liner.

[0075] According to the embodiments of this application, when the vehicle needs to accelerate, the drive submodule can convert the DC power output by the battery into AC power. When the vehicle needs to decelerate, the drive motor switches to generator mode, and the drive submodule rectifies the AC power into DC power. It should be understood that hybrid vehicles in this application include extended-range new energy vehicles and dual-mode intelligent hybrid vehicles (DMI).

[0076] The inventors of the present application further unexpectedly discovered that the area ratio of the active switch chip to the passive freewheeling chip in the power generation submodule 2 has an important influence on the power generation efficiency of the power generation equipment. However, the inventors of the present application discovered that the increase in chip area cannot always improve the power generation efficiency, and a balance needs to be achieved between the chip area and the power generation efficiency. Based on the calculation requirements of the power generation operating conditions, the stalled rotor operating conditions and the actual application scenario operating conditions, it can be obtained that under the same operating conditions, when the area ratio of the active switch chip to the passive freewheeling chip meets the first ratio, the power generation efficiency is significantly improved. In other words, compared with the existing power generation module, under the same power generation efficiency, when the area ratio of the active switch chip to the passive freewheeling chip meets the first ratio, the loss of the converter bridge provided in the embodiment of the present application is smaller. The detailed calculation process of a bridge arm in the converter bridge provided in the embodiment of the present application is as follows.

[0077] The inventors of the present application further unexpectedly discovered that the area ratio of the active switch chip to the passive freewheeling chip in the power generation submodule 2 has an important influence on the power generation efficiency of the power generation equipment. In traditional power generation modules, the area of ​​the active switch chip is 1.5-2 times the area of ​​the passive freewheeling chip. The area of ​​the active switch chip is larger than the area of ​​the passive freewheeling switch, and the power generation efficiency is relatively low. However, the inventors of the present application discovered that the increase in chip area cannot always improve the power generation efficiency, and a balance needs to be achieved between the chip area and the power generation efficiency. Based on the calculation requirements of power generation conditions, stall conditions and actual application scenarios, it can be obtained that under the same conditions, when the area ratio of the active switch chip to the passive freewheeling chip meets the first ratio, the power generation efficiency is significantly improved. In other words, compared with the existing power generation module, under the same power generation efficiency, when the area ratio of the active switch chip to the passive freewheeling chip meets the first ratio, the loss of the second converter bridge circuit provided by the embodiment of the present application is smaller. This application is implemented using Figure 5 The calculation method shown calculates the area relationship between the passive freewheeling chip and the active switch chip. The detailed calculation process is as follows, taking one bridge arm in the second current conversion bridge circuit provided in the embodiment of the present application as an example.

[0078] According to the efficiency calculation formula:

[0079] η=P out / P in =(P in -P loss ) / P in (1)

[0080] Where η is the power generation efficiency, P in is the input power, P out is the output power, P loss is the total electronic control loss.

[0081] P loss =P1+P2+P cu (2)

[0082] Among them, P1 is the total loss of the active switch chip, P2 is the total loss of the passive freewheeling chip, and P cu Copper bus loss.

[0083]

[0084] Among them, P con1 is the conduction loss of the active switch chip, P swon is the active switch chip turn-on loss, P swoff It is the turn-off loss of the active switch chip.

[0085]

[0086] Among them, Pcon2 is the conduction loss of the passive freewheeling chip, P swrec It is the reverse recovery loss of the passive freewheeling chip.

[0087] Thus, the total electric control loss can be obtained:

[0088]

[0089] Taking an electrical cycle as an example, during the positive half-cycle of current, the upper-side active switch chip operates as a hard switch, generating switching losses, while the lower-side active switch chip operates as a zero-voltage switch, generating no switching losses. During the negative half-cycle of current, the lower-side active switch chip operates as a hard switch, while the upper-side active switch chip operates as a zero-voltage switch. Therefore, integrating the switching losses over half a cycle and averaging them over the entire cycle yields the average switching loss. The formula for calculating the average switching loss is as follows:

[0090]

[0091] Among them, P sw is the average switching loss in one electrical cycle, V DC is the bus voltage, I D For T j is the junction temperature of the active switch chip, T0 is the cycle time, E sw For, f sw is the switching frequency.

[0092] The switching loss of the active switch chip can be expressed as

[0093]

[0094] Among them, P swon is the active switch chip turn-on loss, Factor Vdcon b1 is the active switch chip turn-on loss voltage coefficient, on b2 is the first-order coefficient of the relationship between the active switch chip turn-on energy coefficient and current, on b3 is the quadratic coefficient of the relationship between the active switch chip turn-on energy coefficient and current, on is the cubic coefficient of the relationship between the active switch chip turn-on energy coefficient and current, I p For current.

[0095]

[0096] Among them, P swoff is the turn-off loss of the active switch chip, Factor Vdcoff is the turn-off loss voltage coefficient of the active switch chip, b1 off b2 is the first-order coefficient of the relationship between the turn-off energy coefficient of the active switch chip and the current, offb3 is the quadratic coefficient of the relationship between the turn-off energy coefficient of the active switch chip and the current, off is the cubic coefficient of the relationship between the turn-off energy coefficient of the active switch chip and the current, I p For current.

[0097] The reverse recovery loss of the passive freewheeling chip can be expressed as:

[0098]

[0099] Among them, P swrec is the reverse recovery loss of the passive freewheeling chip, Factor Vdcrec is the reverse recovery loss voltage coefficient of the passive freewheeling chip, b1 rec b2 is the linear coefficient of the relationship between the reverse recovery energy coefficient and current of the passive freewheeling chip, rec b3 is the quadratic coefficient of the relationship between the reverse recovery energy coefficient and current of the passive freewheeling chip, rec It is the cubic coefficient of the relationship between the reverse recovery energy coefficient of the passive freewheeling chip and the current, and Ip is the current.

[0100] The copper bus loss can be expressed as

[0101] P cu =I dc 2 *0.0002*2+I ac 2 *0.0001*6+I c 2 *0.0006 (10)

[0102] Among them, I dc is the input DC current, I ac is the output phase current, I c is the capacitor ripple current.

[0103] Furthermore, taking an electrical cycle as an example, in the positive half cycle of current, when the upper bridge active switch chip is turned on, the current flows through the active switch chip to generate forward conduction loss. When the active switch chip is turned off, the current passes through the lower bridge passive freewheeling chip. In the negative half cycle of current, when the lower bridge active switch chip is turned on, the current flows through the active switch chip to generate forward conduction loss. When the active switch chip is turned off, the current flows through the upper bridge passive freewheeling chip. Therefore, without considering the dead time, in one electrical cycle, the active switch chip will only generate forward conduction loss according to the turn-on duty cycle in the corresponding half current cycle. Therefore, the average conduction loss can be obtained by integrating the loss of one current cycle according to the duty cycle and averaging it. Taking the upper bridge as an example, the fitting results are as follows:

[0104]

[0105] The conduction loss is the loss after the active switch chip is turned on. When the active switch chip is turned on, its internal resistance will change with the current and temperature; Figure 6 As shown in (a), I c and V ce It is not a linear relationship; Figure 6 As shown in (b), R 2 is the square value of the linear fit R, R 2 The closer the value is to 1, the better the fit. It can be seen that when expressed in polynomial form, the fit is higher and closer to reality. At this time, the conduction loss of the active switch chip can be expressed as

[0106]

[0107] Where m is the modulation index and D is the duty cycle.

[0108] The duty cycle D can be expressed as:

[0109]

[0110] Where θ = ωt, ω is the angular frequency, t is the time, and φ is the phase difference of the voltage or current.

[0111] Therefore, the result after integrating the conduction loss of the active switch chip is:

[0112]

[0113] where a fwd is the quadratic coefficient of the relationship between the voltage drop and current of the active switch chip, b fwd is the first-order coefficient of the relationship between the voltage drop and current of the active switch chip, c fwd is the constant coefficient of the relationship between the voltage drop and current of the active switch chip, p f is the power factor.

[0114] Similarly, the conduction loss of the passive freewheeling chip can be expressed as:

[0115]

[0116] Among them, a rvs b is the quadratic coefficient of the relationship between the voltage drop and current of the passive freewheeling chip, rvs is the linear coefficient of the relationship between the voltage drop and current of the passive freewheeling chip, c rvs It is the constant coefficient of the relationship between the voltage drop and current of the passive freewheeling chip.

[0117] Since the change in integrated circuit area has no effect on the switching losses of the active switch chip and the passive freewheeling chip, the switching loss of the active switch chip, the reverse recovery loss of the passive freewheeling chip, and the copper busbar loss can be simplified as follows:

[0118] P swon =E swon (I p , U dc , T j ) (16)

[0119] P swoff =E swoff (I p , U dc , T j ) (17)

[0120] P swrec =E swrec (I p , U dc , T j ) (18)

[0121] P cu =I p *R cu (19)

[0122] From this, the total dynamic loss P can be unified into sw :

[0123] P sw =P swon +P swoff +P swrec +P cu (twenty one)

[0124] Therefore, the total electric control loss can be further expressed as:

[0125] P loss =P con1 +P con2 +P sw (twenty two)

[0126] From the above, we can see that the analysis Figure 6 (a) and (b) in the formula and combined with formula (12) and (14), it is found that the conduction loss is mainly related to the power factor p f , modulation index m is related to polynomial coefficients (a, b, c); power factor p f The modulation index m is mainly affected by the motor. Among them, for the total loss of the active switch chip, the coefficient a is (1440+770*m*p f -355*m*p f 3); coefficient b is (764+1829*m*p f -221*m*p f 3 ) coefficient c is (2160+1957*m*p f ); For the total loss of the passive freewheeling chip, the coefficient a is (1440-770*m*p f +355*m*p f 3 ); coefficient b is (764-1829*m*p f +221*m*p f 3 ); coefficient c is (2160-1957*m*p f ).

[0127] Combined with the operating condition evaluation of extended-range new energy vehicles, the power factor p f , modulation index m under power generation conditions, power factor p f The main working conditions are above -0.9; the working conditions with modulation index m mainly between 0.3 and 0.7 account for a large proportion. Therefore, for the analysis of these special working conditions, formula (12) and formula (14) can be combined with p as follows f The parameter division coefficient related to m is the magnification of a, b, and c, and the analysis is performed based on the actual parameter values. Figure 7 As shown in the figure, taking FRD chip and IGBT chip as examples, the amplification factors a, b, and c of FRD chip are much greater than those of IGBT chip. Figure 7 It can be seen that under power generation conditions, the conduction loss Pcon2 of the FRD (passive freewheeling chip) is greater than the conduction loss Pcon1 of the IGBT (active switching chip). Therefore, to improve power generation efficiency, conduction loss can be further reduced. Moreover, compared with active switching chips, the conduction loss of passive freewheeling chips has greater room for optimization, and reducing the loss of passive freewheeling chips will generate greater benefits.

[0128] Combining formulas (14) and (15), a fwd and a rvs is a negative number, the smaller the active switch chip area is, the higher the power generation efficiency is; b fwd and b rvs The larger the area of ​​the passive freewheeling chip is, the higher the power generation efficiency is. (a), (b), (c), and (d) in Figure 1 show the coefficient a respectively. fwd 、b fwd 、a rvs and b rvs Relationship with chip area. Figure 9 The relationship between power generation efficiency and chip area calculated based on the actual operating conditions of the extended-range vehicle is shown. Figure 9(a) shows the relationship between the area ratio of the passive freewheeling chip to the active switch chip and the power generation efficiency of the power generation module under the operating conditions of a 400V extended-range hybrid vehicle. Figure 9 (b) shows the relationship between the area ratio of the passive freewheeling chip and the active switch chip and the power generation efficiency of the power generation module under the working conditions of an 800V extended-range hybrid vehicle. Figure 9 When the area ratio is greater than or equal to 0.6, a good balance between efficiency and chip area is achieved. When the area ratio is less than or equal to 1, power generation efficiency increases as the area ratio of the passive freewheeling chip to the active switch chip increases. When the area ratio is greater than or equal to 1 and less than or equal to 1.2, the growth trend of power generation efficiency slows down, and the growth trend slows further after the area ratio exceeds 1.2. When the area ratio is greater than or equal to 1.2 and less than or equal to 2, the growth of power generation efficiency gradually reaches a plateau. Therefore, under the premise of meeting the output current capacity, the larger the passive freewheeling chip area, the higher the power generation efficiency. When the output current capacity is determined and the area of ​​the active switch chip remains unchanged, increasing the passive freewheeling chip area can improve power generation efficiency. Therefore, for hybrid vehicles, controlling the ratio of the passive freewheeling chip area to the active switch chip area to meet the first ratio can reduce the losses of the rectifier bridge, thereby reducing the losses of the power generation submodule. This can reduce the heat dissipation required by the power generation submodule 2 and the size of the power generation submodule, allowing the active switch chip and the passive freewheeling module to be integrated into a smaller space. Therefore, controlling the area ratio of the passive freewheeling chip to the active switch chip in at least one bridge arm of the second current conversion bridge circuit can reduce losses, so that chips with smaller areas can be used in the current conversion bridge under the same output current capacity.

[0129] For extended-range new energy vehicles, based on power generation conditions, stalled rotor conditions, and actual vehicle application scenarios, it is calculated that when the ratio of the total area of ​​the passive freewheeling chip and the active switch chip of the second converter bridge circuit meets the first ratio, and the first ratio is greater than or equal to 0.6, the power generation efficiency and chip area are well balanced, so that the first number of active switch chips and the second number of passive freewheeling chips can be integrated onto the same lining with a smaller area. In this way, while ensuring the output current capacity and power generation efficiency, the loss of the second converter bridge circuit is minimized and the required heat dissipation area is minimized. Optionally, if Figure 9As shown, the area ratio of at least one passive freewheeling chip and its corresponding active switch chip is greater than or equal to 0.6. Exemplarily, the first ratio is greater than or equal to 0.6 and less than or equal to 1. Another exemplary embodiment, the first ratio is greater than or equal to 0.6 and less than or equal to 1.2. Another exemplary embodiment, the ratio of the total area of ​​the passive freewheeling chips to the total area of ​​the active switch chips in the second converter bridge circuit is greater than or equal to 0.6 and less than or equal to 2. In other words, as long as there is at least one pair of paired passive freewheeling chips and active switch chips whose total area ratio satisfies the first ratio, the highest power generation efficiency can be achieved with the smallest liner area.

[0130] According to the implementation of the present application, the area ratio of the passive freewheeling chip and the active switch chip connected in parallel in at least one bridge arm of the second converter bridge circuit of the power generation submodule satisfies the first preset ratio, thereby reducing the loss of the second converter bridge under power generation conditions. In this way, for the same operating conditions and design requirements, the total number of chips required is also reduced accordingly. For example, in the prior art, the bridge arm corresponding to each phase in the three-phase power generation module includes 6 active switch chips and 6 passive freewheeling chips. However, if Figure 4 As shown, the bridge arm corresponding to each phase in the power generation sub-module provided by the embodiment of the present application only requires 2 active switch chips and 2 passive freewheeling chips.

[0131] Based on similar principles, controlling the area ratio of the passive freewheeling chip to the corresponding active switch chip in the driver submodule can also reduce the losses of the driver submodule, thereby achieving miniaturization and integration of the driver submodule. Based on similar principles, controlling the area ratio of the passive freewheeling chip to the active switch chip in the driver submodule can also reduce the losses of the driver submodule, thereby enabling the driver submodule to be integrated into the same liner.

[0132] It should be noted that the inverter bridge in the drive module can also be used as a rectifier bridge under certain working conditions. For example, when a hybrid vehicle is performing kinetic energy recovery, Figure 2 As shown, the inverter bridge of the drive submodule converts the AC power generated by the drive motor into DC power to supplement the high-voltage battery.

[0133] Under the same current demand, the chip area should be maximized to avoid chip waste. Once the current demand is confirmed, the area of ​​the active switch chip will be locked. Considering the overall cost and volume, the passive freewheeling chip area is maximized to reduce power generation module losses, optimize power generation efficiency, and help improve driving range.

[0134] For example, Figure 4 As shown, the first aspect of the embodiment of the present application provides a power module. Specifically, the integrated power device includes a driver submodule 1 (with Figure 2The same principle as the driving module) and the electronic module 2 (with Figure 2 The principle of the power generation module is the same as that of the hybrid vehicle. The drive submodule 1 is configured to perform inversion or rectification according to the driving state of the hybrid vehicle; the power generation submodule 2 is configured to rectify the AC power output by the hybrid vehicle's generator. For example, when the vehicle needs to accelerate, the drive submodule can convert the DC power output by the battery into AC power; when the vehicle needs to decelerate, the drive motor switches to generator mode, and the drive submodule rectifies the AC power into DC power. It should be understood that hybrid vehicles in this application include extended-range new energy vehicles and dual-mode intelligent hybrid vehicles (DMI).

[0135] Wherein, the driving submodule 1 is configured to perform inversion or rectification according to the driving state of the hybrid vehicle; the power generation submodule 2 includes a rectifier bridge 21. The rectifier bridge 21 includes a first number of active switch chips 211, and a second number of passive freewheeling chips 212 arranged in pairs with at least some of the active switch chips 211. Wherein, the area ratio of at least one pair of passive freewheeling chips 212 to the active switch chip 211 meets a first preset ratio to reduce the loss of the rectifier bridge, so that the first number of active switch chips 211 and the second number of passive freewheeling chips 212 can be integrated into a reduced space. As Figure 4 As shown, the rectifier bridge 21 is a full-bridge circuit. Optionally, the driver submodule 1 and the power generation submodule 2 are arranged in parallel. It should be noted that the first quantity and the second quantity are determined by actual design requirements. Optionally, the first quantity is equal to the second quantity. Optionally, the first quantity is greater than the second quantity. Optionally, the first quantity is less than the second quantity.

[0136] According to the embodiments of the present application, the active switch chip includes a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a silicon carbide field effect transistor (SiC MOSFET), a gallium nitride field effect transistor (GaN FET), and a bipolar junction transistor (BJT). In some optional embodiments, the passive freewheeling chip includes a diode, such as an FRD or a Schottky diode. It should be understood that the diode provided in the embodiments of the present application can be a silicon diode or a silicon carbide diode.

[0137] According to the embodiment of the present application, the first number and the second number are determined by the number of phases required by the power generation submodule 2. In some optional embodiments, the second number is equal to the first number. In some optional embodiments, based on the requirements of power level improvement and redundant design, the second number is less than the first number. Figure 4 As shown, the active switch chip 211 and the passive freewheeling chip 212 are arranged in pairs. Figure 4 As shown, the driver module 1 includes three independent half-bridge units 11, which correspond to the U phase, V phase and W phase from left to right. Figure 4 , the upper bridge of each half-bridge circuit in the half-bridge unit includes Figure 4 The upper 2X2 chip array shown; the lower bridge includes Figure 4 The lower 2X2 chip array is shown.

[0138] Optionally, the rectifier bridge 21 provided in the embodiment of the present application is used to rectify the output current of the power generation equipment of the hybrid vehicle. It should be noted that the above-mentioned power generation equipment refers to the generator driven by the engine in the hybrid vehicle. Compared with the power generation module composed of multiple independent half-bridge modules in the prior art, the rectifier bridge 21 of the power generation submodule 2 provided in the embodiment of the present application adopts a full-bridge circuit, which reduces the size along the arrangement direction of the drive module and the power generation module. Similar to the drive submodule, Figure 4 The chip array at the upper position in the middle belongs to the upper bridge of the rectifier bridge 21; the chip array at the lower position belongs to the lower bridge of the rectifier bridge 21. For example, for three-phase alternating current, Figure 4 The three columns of chips from left to right in the full-bridge circuit correspond to phase U, phase V, and phase W. It should be noted that the layout positions of the upper bridge and lower bridge in the half-bridge circuit and full-bridge circuit of this application are staggered to reduce parasitic inductance.

[0139] It should be understood that the size of the active switch chip and the passive freewheeling chip in the driver submodule is different from that of the active switch chip and the passive freewheeling chip in the generator submodule. Figure 4 The active switch chip for the half-bridge circuit in the driver submodule and the active switch chip for the full-bridge circuit in the power generation submodule provided in the embodiments of the present application are collectively referred to as active switch chips. The passive freewheeling chip for the half-bridge circuit in the driver submodule and the passive freewheeling chip for the full-bridge circuit in the power generation submodule provided in the embodiments of the present application are collectively referred to as passive freewheeling chips.

[0140] According to the embodiment of the present application, the first converter bridge circuit of the driving submodule is a multi-phase circuit. The first converter bridge circuit includes multiple bridge arms, and the multiple bridge arms are respectively arranged on multiple independent first lining plates. For example, Figure 4As shown, the first current conversion bridge circuit is a three-phase circuit, and the three bridge arms of the three-phase circuit are respectively arranged on three independent first lining plates.

[0141] According to an embodiment of the present application, the liner provided in the embodiment of the present application includes a substrate. One side surface of the substrate includes at least one conductor covering area. One electrode of any one of the first number of active switch chips and the second number of passive freewheeling chips is electrically connected to the conductor covering area, so that the chip can be electrically connected to the DC port of the rectifier bridge via the conductor covering area. Optionally, at least one conductor covering area includes a first conductor covering area and a second conductor covering area insulated from each other. The first conductor covering area and the second conductor covering area can be connected to the positive and negative poles of the DC port, respectively. According to an embodiment of the present application, the first conductor covering area and the second conductor covering area are spaced apart.

[0142] According to an optional embodiment of the present application, the rectifier bridge is a multi-phase full-bridge circuit. The bridge arm corresponding to each phase in the multi-phase full-bridge circuit includes an upper bridge arm and a lower bridge arm. The upper bridge arm is arranged in the first conductor covering area; and the lower bridge arm is arranged in the second conductor covering area. Optionally, the collector of the active switch chip of the upper bridge arm is electrically connected to the first conductor covering area; the cathode of the passive freewheeling chip of the upper bridge arm is electrically connected to the first covering area. Optionally, the emitter of the active switch chip of the lower bridge arm is electrically connected to the second conductor covering area; and the anode of the passive freewheeling chip of the lower bridge arm is electrically connected to the second conductor covering area.

[0143] According to an embodiment of the present application, the chips (active switch chip and passive freewheeling chip) in the upper bridge arm of at least two bridge arms of the second current conversion bridge circuit are electrically connected to the first conductor covering area; the chips (active switch chip and passive freewheeling chip) in the lower bridge arm of at least two bridge arms of the second current conversion bridge circuit are electrically connected to the first conductor covering area.

[0144] In a typical embodiment, the chips of the first / second converter bridge include multiple upper bridge chip groups and multiple lower bridge chip groups; the upper bridge chip groups are arranged in the first conductor covering area to constitute the upper bridge arms in the bridge arms; the lower bridge chip groups are arranged in the second conductor covering area to constitute the lower bridge arms in the bridge arms.

[0145] Furthermore, both the upper bridge chipset and the lower bridge chipset include active switch chips and passive freewheeling chips, such as Figure 2 As shown, the two non-control terminals of the active switch chip (such as the collector and emitter of the IGBT chip, or the source and drain of the SiC MOSFET chip) are arranged in parallel with the passive freewheeling chip.

[0146] Specifically, the cathode of the passive freewheeling chip in the upper bridge chipset is electrically connected to the first conductor covering area; the anode of the passive freewheeling chip in the lower bridge chipset is electrically connected to the second conductor covering area.

[0147] In a typical embodiment, Figure 4 As shown, the active switch chip is an insulated gate bipolar transistor (IGBT) chip, and the passive freewheeling chip is a fast recovery diode (FRD) chip. In any chipset, the collector of the IGBT chip is connected to the cathode of the fast recovery diode chip, and the emitter of the IGBT chip is connected to the anode of the fast recovery diode chip.

[0148] In an embodiment, the active switch chip may also be a silicon carbide field effect transistor (SiC MOSFET) or a similar active switch device, and the connection method is similar to that of an insulated gate bipolar transistor (IGBT).

[0149] The collector of the insulated gate bipolar transistor chip in the upper bridge chipset is electrically connected to the first conductor covering area, and the emitter of the insulated gate bipolar transistor chip in the lower bridge chipset is electrically connected to the second conductor covering area.

[0150] In the aforementioned embodiment, the collectors of all the IGBT chips in the upper bridge chipset have the same potential. Similarly, the emitters of all the IGBT chips in the lower bridge chipset also have the same potential.

[0151] In a typical embodiment, multiple chips are used to form a three-phase full-bridge circuit. In other words, six insulated gate bipolar transistor chips and corresponding six fast recovery diode chips are provided on the same substrate to form three phase bridge arms.

[0152] In a typical embodiment, multiple chips are used to form two phase bridge arms of a three-phase full-bridge circuit. In other words, four insulated gate bipolar transistor chips and four corresponding fast recovery diode chips are simultaneously arranged on the same substrate to form two phase bridge arms.

[0153] In a preferred embodiment, among the aforementioned multiple chips, one electrode of any chip is mounted or welded to the conductor covering area through a conductive medium.

[0154] In a typical embodiment, the collectors of the three insulated gate bipolar transistors in the three upper bridge chip groups in the U-phase bridge arm, V-phase bridge arm, and W-phase bridge arm in the power generation module are all soldered to the first conductor covering area through the chip solder layer 130; similarly, the emitters of the three insulated gate bipolar transistors in the three lower bridge chip groups are all soldered to the second conductor covering area through the chip solder layer.

[0155] In a typical embodiment, the cathodes of the three fast recovery diodes in the three upper bridge chip groups in the U-phase bridge arm, V-phase bridge arm, and W-phase bridge arm of the power generation module are all soldered to the first conductor covering area through the chip solder layer; the anodes of the three fast recovery diodes in the three lower bridge chip groups are all soldered to the second conductor covering area through the chip solder layer.

[0156] Figure 10 An optional side view of the power generation submodule provided in the embodiment of the present application is shown. Figure 10 Optionally, in embodiments of the present application, the backing plate of the power generation submodule or driver submodule comprises a direct bond copper ceramic substrate (DBC). The DBC substrate comprises a first copper layer 52, a substrate 51, and a second copper layer 53. The first and second copper layers 52, 53 are bonded to two opposing surfaces of the substrate 51, forming a "copper-ceramic-copper" sandwich structure. The first or second copper layer comprises a first copper pattern and a second copper pattern, which are insulated from each other. The first copper pattern is used to form the upper bridge of the rectifier bridge, while the second copper pattern is used to form the lower bridge of the rectifier bridge. The DBC structure improves the heat dissipation capabilities of the driver submodule 1 and the power generation submodule 2. Therefore, when the power generation submodule 2 uses a full-bridge circuit, the DBC structure can further reduce the area of ​​the second backing plate while maintaining power generation efficiency, thereby reducing the size of the power generation submodule 2. Furthermore, the use of the DBC structure as the substrate for the half-bridge unit in the driver submodule 1 further reduces the size of the driver submodule, facilitating the integration and miniaturization of the power module provided in this application. Optionally, the material of the ceramic substrate includes any one of silicon nitride (Si3N4), aluminum nitride (AlN) and aluminum oxide (Al3O3). Preferably, for the driver submodule, its circuit is arranged on a liner based on silicon nitride ceramic. In addition, the use of a substrate with a DBC structure can ensure the consistency of parasitic inductance in the upper and lower bridges, reduce the stray inductance of the system, and at the same time, under the same power demand, the required heat dissipation area is smaller, which is more conducive to miniaturization. In this way, the loss of the first converter bridge circuit can be effectively reduced, and the total chip area or number of chips required can be reduced. A bridge arm in a traditional driver submodule requires at least 6 active switch chips and 6 passive freewheeling chips. For example, Figure 4 As shown, using the first lining plate provided by the present application, at least one bridge arm in the driver submodule only requires 4 active switch chips and 4 passive freewheeling chips. Optionally, the thermal conductivity of the lining plate (first lining plate) of the driver submodule provided in the embodiment of the present application is greater than 27W / m·K. Exemplarily, the first lining plate includes a silicon nitride (Si3N4) ceramic substrate, an aluminum nitride (AlN) ceramic substrate, or an aluminum oxide (Al3O3) ceramic substrate.

[0157] See also Figure 10 Optionally, a chip solder layer 54 and a liner solder layer 55 are further formed on the surfaces of the first copper layer 52 and the second copper layer 53. Figure 10 , the passive freewheeling chip and the active switch chip are arranged on the surface of the chip solder layer. Optionally, compared with the passive freewheeling chip, the active switch chip is closer to the edge of the chip solder layer to reduce the thermal coupling of the active switch chip. The signal terminal 6 passes through the chip solder layer and is inserted into the ceramic substrate 51 to monitor the voltage drop across the collector and emitter of the active switch chip in the rectifier bridge. For the power generation sub-module provided in the present application, the upper bridge and the lower bridge of the rectifier bridge are respectively provided with signal terminals 6. Since the area ratio of the passive freewheeling chip to the active switch chip in the power generation sub-module provided in the present application meets the first preset ratio, the full-bridge circuit of the power generation sub-module can be integrated into the same lining board. Therefore, when the rectifier bridge is a multi-phase rectifier bridge, the collectors of all the upper bridges in the multi-phase rectifier bridge share a signal terminal (also called C signal terminal), and the emitters of all the lower bridges share a signal terminal (also called E signal terminal). See Figure 10 The edge of the lining is also provided with a temperature measuring resistor 10 (NTC, Negative Temperature Coefficient) for monitoring the temperature of the power generation sub-module 2. Optionally, the total area ratio of the passive freewheeling chip to the active switch chip in the second converter bridge circuit of the power generation sub-module provided herein meets the first ratio, thereby enabling the power generation sub-module to be integrated into the same lining. Thus, all bridge arms in the second converter bridge circuit share a single temperature sensor 10. Exemplarily, the temperature sensor comprises a thermistor (NTC, Negative Temperature Coefficient).

[0158] According to some optional embodiments, such as Figure 4 As shown, in at least one arm of the second converter bridge, the chips in the upper arm (active switch chip and passive freewheeling chip) are offset along a first direction relative to the chips in the lower arm. A temperature sensor is provided at the end of the second liner opposite to the first direction. By offsetting the chips in the upper arm relative to the chips in the lower arm, space is provided for the placement of the temperature sensor.

[0159] According to the implementation mode of this application, Figure 11 As shown, the power module provided in this application also includes a heat dissipation module 7. The heat dissipation module 7 includes a cooling substrate 71 and heat dissipation fins 72; the heat dissipation fins 72 are located on the first surface of the cooling substrate 71; the second surface of the cooling substrate 71 is connected to the power generation submodule and the driver submodule. Figure 10 As shown, the second surface of the cooling substrate 71 is connected to the backing plate through the backing plate solder layer. Figure 12 , the driving sub-module 1 and the power generation sub-module 2 share the same heat dissipation module. Figure 12 In the embodiment, the width of the half-bridge unit 11 is b1, the width of the power submodule is b2, and the sum of the width of the driver submodule and the width of the power submodule is less than the width B of the cooling substrate.

[0160] In some optional embodiments, the heat dissipation fins within the projection of the driver submodule, perpendicular to the cooling baseplate, are arranged at a greater density than those within the projection of the power generation submodule. Because the driver submodule has higher power than the power generation submodule, employing different heat dissipation fin densities can optimize heat dissipation within the driver submodule. Note that the heat dissipation fin density must be considered to ensure efficient circulation of the cooling fluid (refrigerant).

[0161] like Figure 13 As shown, the heat dissipation module further includes a base 73. The base 73 is located on one side of the cooling substrate 71 where the heat dissipation fins 72 are provided, and a fluid channel 74 is formed between the base 73 and the cooling substrate 71. The fluid channel 74 is used to circulate the refrigerant. Optionally, as Figure 13 As shown, the heat dissipation module is integrated.

[0162] According to an embodiment of the present application, the power module further includes a DC terminal 3 and an AC terminal 4. The DC terminal 3 is used for inputting / outputting the AC power of the rectifier bridge, and the DC terminal 3 is used for inputting / outputting the DC power rectified by the rectifier bridge. Figure 14 An optional structure of the DC terminal provided by the present application is shown. Optionally, the center line of the upper bridge chip in each corresponding half-bridge circuit in the rectifier bridge is aligned with the center of the AC terminal of the corresponding phase, and the center lines of the upper and lower bridges are staggered.

[0163] like Figure 14 As shown, the DC terminal 3 includes a laminated busbar. The laminated busbar includes a first terminal 31 and a second terminal 32 that are insulated from each other. The first terminal 31 and the second terminal 32 are arranged opposite to each other in a first direction Z. The interval between the first terminal 31 and the second terminal 32 is H0.

[0164] Among them, the first terminal 31 includes a first section terminal 311 and a second section terminal 312; the first section terminal 311 and the second section terminal 312 are parallel to the second direction Y, and the first end of the first section terminal 311 is electrically connected to the rectifier bridge, and the other end of the first section terminal 311 is connected to one end of the second section terminal 312.

[0165] The second terminal 32 includes a third-section terminal 321, a fourth-section terminal 322 and a fifth-section terminal 323; the third-section terminal 321 and the fourth-section terminal 322 are parallel to the second direction Y; the fifth-section terminal 323 is parallel to the first direction, and the fifth-section terminal 323 points in a direction away from the first-section terminal 311; the first end of the third-section terminal 321 is electrically connected to the rectifier bridge, and the other end of the third-section terminal 321 is connected to one end of the fourth-section terminal 322; the other end of the fourth-section terminal 322 is connected to one end of the fifth-section terminal 323; the first direction Z and the second direction Y are perpendicular to each other.

[0166] like Figure 14 As shown, the power module provided by the present application also includes a capacitor 8. The capacitor 8 is stacked with the power generation submodule 2 along the first direction Z. In addition, the capacitor 8 also includes a third terminal 81 and a fourth terminal 82. The third terminal 81 and the fourth terminal 82 are relatively arranged on the side surface of the capacitor 8 facing the power generation submodule. The third terminal 81 is connected to the fifth segment terminal 323 of the second terminal 32, and the fourth terminal 32 is connected to the second segment terminal 312 of the first terminal. Figure 10 As shown, the fourth terminal is welded to the second end terminal of the first terminal through a wire. Figure 10 As shown, the third terminal is connected to the fifth section terminal 323 of the second terminal by welding.

[0167] According to the embodiments of the present application, when the power module performs high-speed on / off control, a surge voltage V is applied to the current loop in which the power module is located. V is proportional to the magnitude of the series inductance Ls introduced by the terminals in the current loop. The calculation formula for the surge voltage V is:

[0168]

[0169] in, is the rate of change of current in the current loop.

[0170] like Figures 14 to 16 As shown, the first terminal 31 and the second terminal 32 are two parallel and series-connected DC terminals in the electronic control assembly. For example, the first terminal 31 and the second terminal 32 can be the positive and negative terminals of a power module, or the positive and negative terminals of a capacitor assembly, respectively. The first terminal 31 and the second terminal 32 are both assumed to have a width W, a length l, and a thickness t, with a distance d between them. The length l is the dimension of the first / second terminal in the extension direction, the thickness t is the dimension along the first direction Z, and the width W is the dimension along the third direction X. The third direction is perpendicular to the first and second directions.

[0171] for Figure 14 For the arrangement of the first and second terminals shown, the empirical calculation formula for Ls of the two terminals in the current loop is:

[0172]

[0173] Where L1 and L2 represent the self-inductance of the two terminals, respectively; M represents the mutual inductance between the two terminals; k represents the coupling coefficient, which characterizes the degree of coupling between the two terminals; and μ0 represents the magnetic permeability in a vacuum. If WS:W ≠ 1, then k < 1. The smaller the WS:W value, the greater the misalignment between the two terminals' centers, and the smaller the k value. WS represents the overlap width of the two terminals.

[0174] Based on formula (2), the formula of Ls can be expressed as:

[0175]

[0176] Where μ0 is the magnetic permeability in vacuum.

[0177] Based on formula (1) and formula (3), it can be seen that the smaller L, the larger W, and the larger t, the smaller Ls and the smaller V; the larger WS:W, the greater the overlap ratio of the two terminals, the larger k, the smaller Ls, and the smaller the surge voltage.

[0178] Therefore, without increasing the total loop length, the first terminal 21, the second terminal 32, the third terminal 81 and the fourth terminal 82 have the following advantages: the larger the width of each terminal, the greater the overlap ratio, the smaller the self-inductance and the smaller the surge voltage. Figure 15 and Figure 16 As shown, the projections of the first and third segments of terminals, and the second and fourth segments of terminals in the first direction overlap; the projections of the fifth segment of terminals and at least a portion of the third terminal in the second direction overlap; and the projections of the fourth terminal and at least a portion of the third terminal in the second direction overlap. Furthermore, the width W1 of the first segment of terminals is smaller than the width W2 of the second segment of terminals; and the width W3 of the portion of the third terminal away from the capacitor is smaller than the width W4 of the portion of the third terminal close to the capacitor. Optionally, the width of the portion of the fourth terminal away from the capacitor is smaller than the width of the portion of the fourth terminal close to the capacitor. Furthermore, optionally, the width of the third segment of terminals is smaller than the width of the fourth segment of terminals.

[0179] According to an embodiment of the present application, the width of the second-segment terminal is equal to the width of the portion of the third terminal away from the capacitor; and / or, the width of the second-segment terminal is equal to the width of the portion of the fourth terminal away from the capacitor. This improves the overlap between the corresponding terminals in the power module and the capacitor, making the overlap as close to 100% as possible, thereby effectively reducing the series inductance. Similarly, in the third direction, the first, second, third, and fourth terminals also meet the following conditions: the edges of the first-segment terminal and the third-segment terminal meet the flush condition; and / or, the edges of the second-segment terminal and the fourth-segment terminal meet the flush condition; and / or, the edges of the fifth-segment terminal and the third terminal meet the flush condition; and / or, the edges of the fourth terminal and the third terminal meet the flush condition. "Flush" means that the edges of the terminals are flush or approximately flush. By making the edges of the overlapping terminals in the power module and the capacitor flush or approximately flush, the overlap of the terminals is improved and the series inductance is reduced.

[0180] According to an embodiment of the present application, the rectifier bridges of the power generation submodule share a set of DC terminals. Optionally, when the driver module utilizes multiple independent half-bridge units, each half-bridge unit utilizes an independent DC terminal. Optionally, when the driver module utilizes a full-bridge circuit, the full-bridge circuit utilizes a set of DC terminals.

[0181] According to the embodiment of the present application, the present application provides a sub-power module further comprising a housing, the housing comprising a frame and a cover. The driving sub-module and the power sub-module provided by the present application share the same frame. In some embodiments, such as Figure 17 As shown, the power submodule provided in the present application also includes a frame 11. The frame 5 is arranged on the side of the cooling substrate of the heat dissipation module 7 away from the heat dissipation fins, and the half-bridge unit of the driver submodule 1 and the rectifier bridge of the power generation submodule 2 are arranged in the area surrounded by the outline of the frame 11. Optionally, the space between the frame 11 and the driver submodule 1 and the power generation submodule 2 is filled with a heat dissipation medium (such as silicone). The power submodule provided in the present application also includes a cover plate, which is used to enclose the space formed by the frame 11 and the heat dissipation module 7. Exemplarily, the connection method between the cover plate and the frame includes welding, hole column connection and snap connection. Exemplarily, the material of the frame and the cover plate includes a high molecular polymer, such as polyphenylene sulfide (PPS). The use of a PPS shell allows the long-term operating temperature of the chip in the power module provided in the present application to be increased to 175°C.

[0182] According to the implementation mode of this application, Figure 17 As shown, the sub-power module also includes a magnetic core for suppressing high-frequency common-mode noise generated by the active switch chip. Optionally, the magnetic core is directly mounted on the cable of the AC terminal 4.

[0183] In a second aspect, the present application also provides a motor controller, comprising a power module as described in any of the above embodiments.

[0184] In a third aspect, an embodiment of the present application further provides a drive assembly comprising a power module as described in any of the above embodiments.

[0185] In a fourth aspect, an embodiment of the present application further provides a vehicle, characterized in that it comprises a power module as described in any of the above embodiments.

[0186] In summary, the power module provided in the embodiment of the present application reduces the area of ​​the lining plate by adopting a full-bridge circuit, thereby realizing the miniaturization of the power generation sub-module and promoting the integration and miniaturization of the driving sub-module and the power generation sub-module. The power module also further reduces the area of ​​the lining plate without affecting the current capacity and power generation efficiency by limiting the area ratio of the passive freewheeling chip to the active switch chip, further promoting the integration and miniaturization of the driving sub-module and the power generation sub-module. The sub-power module provided in the present application further reduces the area of ​​the lining plate by adopting a DBC lining plate. Therefore, the sub-power module provided in the present application enables the driving sub-module and the power generation sub-module to share the same frame and the same second heat dissipation structure, reducing production costs, design difficulty, assembly difficulty, and improving the utilization rate of the space inside the vehicle.

[0187] The motor controller, drive assembly, and vehicle provided in the embodiments of the present application include the power module provided in any of the above embodiments, which reduces production costs, design difficulty, assembly difficulty, and improves the utilization of the space inside the vehicle.

[0188] The present application also provides a technical solution as described in the following notes:

[0189] 1. A power module comprising: a driver submodule and a power generation submodule;

[0190] The driving submodule is configured to perform inversion or rectification according to the driving state of the hybrid vehicle;

[0191] The power generation submodule includes a full-bridge unit, which includes a lining plate and a full-bridge circuit arranged on one side surface of the lining plate; the full-bridge circuit is configured as a rectifier bridge for rectifying the output current of the power generation equipment of the hybrid vehicle.

[0192] 2. The power module according to Note 1, wherein the rectifier bridge comprises a first number of active switch chips, and a second number of passive freewheeling chips arranged in pairs with at least some of the active switch chips;

[0193] Among them, the area ratio of at least one pair of the paired passive freewheeling chips to the active switch chips meets a first preset ratio to reduce the loss of the rectifier bridge, so that the first number of active switch chips and the second number of passive freewheeling chips can be integrated into a reduced space.

[0194] 3. According to the power module described in Note 1 or 2, the rectifier bridge also meets the following requirements: the area ratio of at least one pair of the paired passive freewheeling chips to the active switch chips is greater than or equal to 0.6 and less than or equal to 1.25, so as to reduce the loss of the rectifier bridge, thereby enabling the first number of active switch chips and the second number of passive freewheeling chips to be integrated onto the same lining board.

[0195] 4. The power module according to any one of Notes 1 to 3, wherein the liner comprises a substrate; a surface of one side of the substrate comprises at least one conductor covering area;

[0196] One electrode of any one of the first number of active switch chips and the second number of passive freewheeling chips is electrically connected to the conductor covering area, so that the chip can be electrically connected to the DC port of the rectifier bridge via the conductor covering area.

[0197] 5. According to any one of the power modules described in Notes 1 to 4, the at least one conductor covering area includes a first conductor covering area and a second conductor covering area insulated from each other; the first conductor covering area and the second conductor covering area can be connected to the positive and negative poles of the DC port respectively.

[0198] 6. The power module according to any one of Notes 1 to 5, wherein the rectifier bridge is a multi-phase full-bridge circuit; and the bridge arm corresponding to each phase in the multi-phase full-bridge circuit includes an upper bridge arm and a lower bridge arm;

[0199] The upper bridge arm is arranged in the first conductor coverage area; and

[0200] The lower bridge arm is arranged in the second conductor covering area.

[0201] 7. According to any one of the power modules described in Notes 1 to 6, the collector of the active switch chip of the upper bridge arm is electrically connected to the first conductor covering area; the cathode of the passive freewheeling chip of the upper bridge arm is electrically connected to the first covering area.

[0202] 8. According to any one of Notes 1 to 7, the emitter of the active switch chip of the lower bridge arm is electrically connected to the second conductor covering area; the anode of the passive freewheeling chip of the lower bridge arm is electrically connected to the second conductor covering area.

[0203] 9. According to any one of Notes 1 to 8, the power module, wherein the first number of active switch chips and the second number of passive freewheeling chips are integrated into the same substrate.

[0204] 10. The power module according to any one of Notes 1 to 9, wherein the power generation module further comprises a signal terminal and / or a temperature measuring resistor;

[0205] The signal terminal is used to monitor the voltage drop between the collector and the emitter in the rectifier bridge; the temperature measuring resistor is used to collect the lining temperature of the power generation module;

[0206] The second number of passive freewheeling chips, the first number of active switch chips, and the signal terminals are integrated into the same substrate; and / or,

[0207] The second number of passive freewheeling chips, the first number of active switch chips and the temperature measuring resistor are integrated into the same liner.

[0208] 11. According to the power module described in any one of Notes 1 to 10, the rectifier bridge is a multi-phase rectifier bridge; the bridge arms corresponding to all phases in the multi-phase rectifier bridge share the same temperature measuring resistor.

[0209] 12. According to the power module described in any one of Notes 1 to 11, the rectifier bridge is a multi-phase rectifier bridge; the collectors of all upper bridges in the multi-phase rectifier bridge share a common signal terminal; and the emitters of all upper bridges in the multi-phase rectifier bridge share a common signal terminal.

[0210] 13. According to any one of Notes 1 to 12, the power module is made of any one of silicon nitride (Si3N4), aluminum nitride (AlN) and aluminum oxide (Al3O3).

[0211] 14. According to any one of the power modules described in Notes 1 to 13, the power module further includes a heat dissipation module; the heat dissipation module includes a cooling substrate and heat dissipation fins; the heat dissipation fins are located on a first surface of the cooling substrate; and the second surface of the cooling substrate is connected to the power generation submodule and the driving submodule.

[0212] 15. According to the power module described in any one of Notes 1 to 14, the driving sub-module and the power generation sub-module share the same heat dissipation module.

[0213] 16. According to any one of the power modules described in Notes 1 to 15, the heat dissipation module further includes a base; the base is located on the side of the cooling substrate having the heat dissipation fins, and the space between the base and the cooling substrate forms a fluid channel, and the fluid channel is used to circulate refrigerant.

[0214] 17. According to any one of Notes 1 to 16, the power module further comprises a DC terminal and an AC terminal; the AC terminal is used for inputting / outputting the AC power of the rectifier bridge, and the DC terminal is used for inputting / outputting the DC power rectified by the rectifier bridge.

[0215] 18. The power module according to any one of Notes 1 to 17, wherein the DC terminal comprises a laminated busbar; the laminated busbar comprises a first terminal and a second terminal insulated from each other, and the first terminal and the second terminal are arranged opposite to each other in the first direction;

[0216] The first terminal includes a first section terminal and a second section terminal; the first section terminal and the second section terminal are parallel to the second direction, and a first end of the first section terminal is electrically connected to the rectifier bridge, and the other end of the first section terminal is connected to one end of the second section terminal;

[0217] The second terminal includes a third section terminal, a fourth section terminal, and a fifth section terminal; the third section terminal and the fourth section terminal are parallel to the second direction; the fifth section terminal is parallel to the first direction, and the fifth section terminal points in a direction away from the first section terminal; a first end of the third terminal is electrically connected to the rectifier bridge, the other end of the third section terminal is connected to one end of the fourth section terminal; the other end of the fourth section terminal is connected to one end of the fifth section terminal;

[0218] The first direction and the second direction are perpendicular to each other.

[0219] 19. The power module according to any one of Notes 1 to 18, further comprising a capacitor; the capacitor and the power generation sub-module are stacked along the first direction; and the capacitor further comprises a third terminal and a fourth terminal; the third terminal and the fourth terminal are disposed oppositely on a surface of the capacitor facing the power generation sub-module.

[0220] The third terminal is connected to the fifth section terminal of the second terminal; and the fourth terminal is connected to the second section terminal of the first terminal.

[0221] 20. The power module according to any one of Notes 1 to 19, further satisfying the following conditions: the projections of the first segment terminals and the third segment terminals, and the projections of the second segment terminals and the fourth segment terminals in the first direction overlap; the projections of the fifth segment terminals and at least a portion of the third terminals in the second direction overlap; and the projections of the fourth terminal and at least a portion of the third terminal in the second direction overlap; and

[0222] The width of the first section terminal is smaller than the width of the second section terminal; the width of the third section terminal is smaller than the width of the fourth section terminal; the width of the part of the third terminal away from the capacitor is smaller than the width of the part of the third terminal close to the capacitor; the width of the part of the fourth terminal away from the capacitor is smaller than the width of the part of the fourth terminal close to the capacitor.

[0223] 21. The power module according to any one of Notes 1 to 20, wherein the width of the second terminal segment is equal to the width of the portion of the third terminal away from the capacitor; and / or

[0224] The width of the second terminal is equal to the width of a portion of the fourth terminal away from the capacitor.

[0225] 22. According to any one of Notes 1 to 21, the power module, along the third direction, the first terminal, the second terminal, the third terminal, and the fourth terminal further satisfy:

[0226] The edges of the first section terminals and the third section terminals meet the flush condition; and / or,

[0227] The edges of the second section terminals and the fourth section terminals meet the flush condition; and / or,

[0228] The edges of the fifth terminal and the third terminal meet the flush condition; and / or,

[0229] The edges of the fourth terminal and the third terminal meet a flush condition.

[0230] 23. According to the power module described in any one of Notes 1 to 22, all half-bridges in the rectifier bridge of the power generation module share a DC terminal.

[0231] 24. According to the power module described in any one of Notes 1 to 23, the driving sub-module includes an inverter bridge, which is used to invert / rectify according to the driving state of the hybrid vehicle; wherein, the area ratio of the passive freewheeling chip and the active switch chip connected in parallel in at least one bridge arm of the inverter bridge meets a second preset ratio to reduce the loss of the inverter bridge, thereby enabling the driving sub-module to be integrated into a smaller space.

[0232] 25. According to the power module described in any one of Notes 1 to 24, the driving submodule includes three independent half-bridge units; the three independent half-bridge units are configured to perform rectification or inversion according to the form state of the hybrid vehicle.

[0233] 26. According to the power module described in Notes 1 to 22, the three half-bridge units share a DC terminal.

[0234] 27. According to any one of Notes 1 to 26, the power module further comprises a frame; the driving submodule and the power generation submodule share the same frame.

[0235] 28. According to any one of Notes 1 to 27, the power module further comprises a frame; the driving submodule and the power generation submodule share the same frame.

[0236] 29. According to the power module described in any one of Notes 1 to 28, the inverter bridge is provided on a liner based on silicon nitride ceramic.

[0237] 30. A motor controller comprising the power module according to any one of Notes 1 to 29.

[0238] 31. A drive assembly comprising a power module according to any one of Notes 1 to 29.

[0239] 32. A vehicle comprising the power module according to any one of Notes 1 to 29.

[0240] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art who can easily conceive of changes or substitutions within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A power module, characterized in that: include: Driver submodule and generator submodule; The driving submodule includes a first current converter bridge circuit configured to be connected to the driving motor; The power generation submodule includes a second lining plate and a second current conversion bridge circuit provided on the second lining plate; the second current conversion bridge circuit is configured to be connected to the generator.

2. The power module according to claim 1, wherein: The second current conversion bridge circuit is a multi-phase circuit; at least two bridge arms of the second current conversion bridge circuit are arranged on the same second lining board.

3. The power module according to claim 2, wherein: The second current conversion bridge circuit is a three-phase circuit; the three bridge arms of the second current conversion bridge circuit are arranged on the same second lining board.

4. The power module according to any one of claims 1 to 3, characterized in that: The second current conversion bridge circuit is a multi-phase circuit; the second current conversion bridge circuit includes at least one active switch chip and at least one passive freewheeling chip; In at least one bridge arm of the second current conversion bridge circuit, a ratio of a total area of ​​the passive freewheeling chips to a total area of ​​the active switch chips satisfies a first ratio, and the first ratio is greater than or equal to 0.

6.

5. The power module according to claim 4, characterized in that: The first ratio is greater than or equal to 1.

6. The power module according to claim 4 or 5, characterized in that: The first ratio is less than or equal to 2.

7. The power module according to claim 4 or 5, characterized in that: The first ratio is less than or equal to 1.

2.

8. The power module according to any one of claims 1 to 7, characterized in that: In at least one bridge arm of the second current conversion bridge circuit, at least some of the passive freewheeling chips and at least some of the active switch chips are arranged in pairs.

9. The power module according to claim 7, wherein: The area ratio of at least one pair of the passive freewheeling chips arranged in pairs to the active switch chip satisfies the first ratio.

10. The power module according to any one of claims 1 to 9, characterized in that: At least one bridge arm of the second current conversion bridge circuit is configured to consist of two active switch chips and two passive freewheeling chips.

11. The power module according to any one of claims 1 to 10, characterized in that: The liner includes a substrate; one side surface of the substrate includes at least one conductor covering area; the at least one conductor covering area includes a first conductor covering area and a second conductor covering area insulated from each other; each of the at least one bridge arm of the second converter bridge circuit includes an upper bridge arm and a lower bridge arm; Among them, the active switch chip and the passive freewheeling chip in the upper bridge arm of at least two bridge arms of the second current conversion bridge circuit are electrically connected to the first conductor covering area; the active switch chip and the passive freewheeling chip in the lower bridge arm of at least two bridge arms of the second current conversion bridge circuit are electrically connected to the second conductor covering area.

12. The power module according to claim 10, wherein: The first conductor coverage area and the second conductor coverage area are spaced apart.

13. The power module according to any one of claims 1 to 12, characterized in that: The power module further includes a temperature sensor; all bridge arms in the second converter bridge circuit share the same temperature sensor.

14. The power module according to any one of claims 1 to 13, characterized in that: In at least one bridge arm of the second converter bridge, the active switch chip and the passive freewheeling chip in the upper bridge arm are offset along a first direction relative to the active switch chip and the passive freewheeling chip in the lower bridge arm, and the temperature sensor is provided at the end of the second lining plate opposite to the first direction.

15. The power module according to any one of claims 1 to 14, characterized in that: The power module further includes a heat dissipation module; and the driving sub-module and the power generation sub-module share the same heat dissipation module.

16. The power module according to claim 15, characterized in that: The heat dissipation module includes a cooling substrate and heat dissipation fins; the heat dissipation fins are located on a first surface of the cooling substrate; and a second surface of the cooling substrate is connected to the power generation submodule and the driving submodule.

17. The power module according to claim 15, characterized in that: Along a direction perpendicular to the cooling substrate, the arrangement density of the heat dissipating fins within the projection range of the driving submodule is greater than the arrangement density of the heat dissipating fins within the projection range of the power generation submodule.

18. The power module according to claim 1, characterized in that: The first current conversion bridge circuit is a multi-phase circuit; the first current conversion bridge circuit includes a plurality of bridge arms; the plurality of bridge arms are respectively arranged on a plurality of independent first lining plates.

19. The power module according to claim 18, wherein: At least one bridge arm of the first current conversion bridge circuit is configured to consist of four active switch chips and four passive freewheeling chips.

20. The power module according to claim 19, wherein: The thermal conductivity of the first lining plate is greater than 27 W / m·K.

21. The power module according to claim 19, wherein: The first liner includes a silicon nitride ceramic substrate, an aluminum nitride ceramic substrate or an aluminum oxide ceramic substrate.

22. The power module according to any one of claims 1 to 21, characterized in that: The driving submodule and the power generation submodule share the same frame.

23. A motor controller, characterized in that: Comprising the power module according to any one of claims 1-22.

24. A drive assembly, characterized in that: Comprising the power module according to any one of claims 1-22.

25. A vehicle, characterized in that: Comprising the power module according to any one of claims 1-22.

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