Atomic layer deposition using tin-based or germanium-based precursors

Abstract

Methods, systems, and apparatus for atomic layer deposition using tin-based or germanium-based precursors are described. For example, a device may react a first precursor with a material to form a first compound comprising a first element on the material, where the first compound comprises at least one of a group XIII, group XIV, or group XV element. Further, the device may react a second precursor with the first compound to form a second compound on the substrate material, the second precursor having the formula B-C (1)-D (1), B-C (1)-C (1)-D (1), B-C (2)-D (1) D (2), BD (3)-C (2)-C (2)-D (1) D (2), B-C (3)-D (1) D (2) D (3), or BD (4) D (5)-C (3)-C (3)-D (1) D (2) D (3) wherein B, D (1), D (2), D (3), D (4) and D (5) are each a respective moiety independently comprising at least one of germanium, tin, or silicon, and wherein C (2) comprises antimony, arsenic and phosphorus, and wherein C (3) comprises silicon, germanium or tin.

Description

[0001] Cross Reference

[0002] This patent application claims priority to U.S. patent application No. 18 / 434,588, filed by Lehn on February 6, 2024, entitled “ATOMIC LAYER DEPOSITION USING TIN-BASED OR GERMANIUM-BASED PRECURSORS,” and U.S. patent application No. 63 / 484,728, filed by Lehn on February 13, 2023, entitled “ATOMIC LAYER DEPOSITION USING TIN-BASED OR GERMANIUM-BASED PRECURSORS,” each of which is assigned to its assignee and the entire text of each of which is expressly incorporated herein by reference. Technical Field

[0003] The following relates to one or more memory systems that include atomic layer deposition using tin-based or germanium-based precursors. Background Art

[0004] Atomic layer deposition (ALD) is a technique for depositing a film on a first material. For example, performing ALD may include exposing a first material to a first precursor to form a second material on the first material. Alternatively, performing ALD may include exposing a second material to a second precursor, wherein the second precursor may react with the second material to leave a third material on the surface of the first material. In some examples, the method may be repeated, wherein the third material may be exposed to the first precursor to form another instance of the second material on the third material, and then another instance of the second material may be exposed to the second precursor to leave another instance of the third material on the surface of the previously formed instance of the third material.

[0005] In some examples, reactions involving ALD can occur at various temperatures. However, if these temperatures remain outside a predetermined range for a threshold duration, other materials near the material being exposed to ALD may experience changes in physical or chemical properties that exceed the desired threshold. These changes in physical or chemical properties can adversely affect the operation of electronic devices containing these other materials (e.g., they can reduce the lifespan of the electronic device or increase the likelihood that the electronic device will exhibit abnormal behavior or not perform its intended function). For some materials, the temperature required to promote a reaction in ALD (e.g., to form a third material) can exceed a predetermined range for a threshold duration. Therefore, materials that promote reactions within a predetermined range or outside the predetermined range for less than a predetermined duration can reduce the likelihood that the operation of the electronic device will be adversely affected. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 Examples of atomic layer deposition (ALD) processes are described that support atomic layer deposition using tin-based or germanium-based precursors, consistent with examples as disclosed herein.

[0007] Figure 2 Examples of material deposition processes are described that support atomic layer deposition using tin-based or germanium-based precursors, consistent with examples as disclosed herein.

[0008] Figure 3 Examples of electronic devices are described that support atomic layer deposition using tin-based or germanium-based precursors, consistent with examples as disclosed herein.

[0009] Figure 4 A block diagram of a controller supporting atomic layer deposition using tin-based or germanium-based precursors, consistent with examples as disclosed herein, is shown.

[0010] Figure 5 and Figure 6 Shown is a flow chart illustrating one or more methods that support atomic layer deposition using tin-based or germanium-based precursors, consistent with examples as disclosed herein. DETAILED DESCRIPTION

[0011] In some examples, selenide films can be deposited on a material using ALD using a silicon-based precursor. However, in order for a selenide film to form on the material, the ambient temperature must be set high enough so that the physical or chemical characteristics of other materials in the same vicinity as the material are not adversely affected. For example, due to changes in the physical or chemical properties of these materials, an electronic device may be more likely to exhibit abnormal behavior or not function as intended. Therefore, precursors capable of forming selenide films at lower temperatures can reduce the likelihood that the operation of the electronic device will be adversely affected.

[0012] As described in the present disclosure, precursors containing germanium or tin instead of silicon (e.g., bis(trimethylgermyl)selenide or bis(trimethylstannyl)selenide) can enable the formation of selenide films at lower temperatures, as compared to one or more precursors containing silicon (e.g., bis(trimethylsilyl)selenide), because germanium and tin can be more reactive than silicon. Additionally or alternatively, such precursors can increase the rate of selenide film formation for a given temperature, as compared to one or more silicon-based precursors. It should be noted that the methods described herein can have similar advantages for tellurium-based films, sulfur-based films, antimony-based films, arsenic-based films, phosphorus-based films, germanium-based films, tin-based films, or any combination thereof.

[0013] In one example of the method disclosed herein, the method may include reacting a first precursor with a material to form a first compound comprising a first element on the substrate material, wherein the first compound comprises at least one element from Group XIII, Group XIV, or Group XV. Additionally, the method may include reacting a second precursor with the first compound to form a second compound on the substrate material, wherein the second precursor comprises germanium, tin, or silicon.

[0014] The features of this disclosure were originally described in reference Figure 1 and Figure 2 The features of the present disclosure are described in the context of the ALD process and material deposition process. Figure 3 These and other features of the present disclosure are described in the context of the electronic device described herein. Figures 4 to 6 The apparatus diagram and flow chart for atomic layer deposition using tin-based or germanium-based precursors are further illustrated and described.

[0015] Figure 1 An example of an ALD process 100 is described that supports atomic layer deposition using tin-based or germanium-based precursors, consistent with examples as disclosed herein.

[0016] As described in step 101-a, a substrate material 105 can be exposed to a first precursor 110. For example, the substrate material 105 can be located in a reactor (e.g., a deposition chamber), where a vapor phase of the first precursor 110 can be introduced. Exposing the substrate material to the first precursor can cause a first compound 115 to form on the surface of the substrate material 105, as described in step 101-b. In some examples, a byproduct 130-a will form due to the reaction between the substrate material 105 and the first precursor 110. After the formation of the first compound 115, the byproduct 130-a may form; in such cases, the byproduct 130-a and / or a portion of the first precursor 110 can be purged (e.g., removed from the reactor) at step 102-a prior to step 101-b. In some examples, the temperature of the reactor can be set or adjusted to a first predetermined value to cause the first compound 115 to form on the surface of the substrate material 105. In some examples, the substrate material can be a substrate. In some examples, exposing a material to a precursor may refer to exposing the precursor to a reactor in which the material is located, whereas reacting the material with the precursor may refer to a chemical reaction that occurs between the precursor and the material and may involve setting or adjusting the temperature of the reactor to a specific temperature that promotes the reaction.

[0017] After forming the first compound 115 in step 101-a, the first compound 115 may be exposed to the second precursor 120 in step 101-b. For example, the gas phase of the second precursor 120 may be introduced into the reactor and exposed to the surface of the first compound 115. In some examples, the substrate material 105 may be transported to the second reactor for introducing the second precursor 120. In other examples, the same reactor may be used. The second precursor 120 may react with the first compound 115 to form the second compound 125, as shown in step 101-b. In some examples, due to the reaction between the first compound 115 and the second precursor 120, a byproduct 130-b will be formed. After the second compound 125 is formed, the byproduct 130-b and / or at least a portion of the second precursor 120 may be blown off (e.g., removed from the reactor) at 102-b before step 101-c. In some examples, the temperature of the reactor may be set or adjusted to a second predetermined value so that the second compound 125 is formed on the surface of the substrate material 105.

[0018] After forming the second compound 125 in step 101-b, the second compound 125 may be exposed to the first precursor 110 in step 101-c. For example, the gas phase of the first precursor 110 may be introduced into the reactor and exposed to the surface of the second compound 125. In some examples, the substrate material 105 may be transported to a third reactor for introducing the first precursor 110. In other examples, the same reactor used for both steps 101-a and 101-b may be used for step 101-c. The first precursor 110 may react with the second compound 125 to form a second instance of the first compound 115 above the second compound 125. In some examples, a byproduct 130-c will be formed due to the reaction between the second compound 125 and the first precursor 110. After the second instance of the first compound 115 is formed, the byproduct 130-c and / or at least a portion of the first precursor 110 may be purged (e.g., removed from the reactor) at 102-c before returning to step 101-b. In some examples, the temperature of the reactor can be set or adjusted to a first predetermined value or a third predetermined value so that the first compound 115 is formed on the surface of the substrate material 105. In some examples, the first precursor 110 and the second precursor 120 can be delivered to the reactor using an inert gas (e.g., argon, helium, nitrogen). Additionally or alternatively, the byproducts 130-a, 130-b, and / or 130-c can be purged using an inert gas (e.g., argon, helium, nitrogen).

[0019] In some examples, the method can be repeated to deposit multiple layers of the second compound 125. For example, after depositing a first instance of the second compound 125, the first instance of the second compound 125 can be exposed to the first precursor 110 to form a second instance of the first compound 115 on the surface of the first instance of the second compound 125. The second instance of the first compound 115 can then be exposed to the second precursor 120 to form a second instance of the second compound 125 on the surface of the first instance of the second compound 125.

[0020] In some examples, the first precursor 110 and the first compound 115 may include Group XIII, Group XIV, or Group XV elements (eg, germanium, arsenic, tin). Additionally, the second precursor 120 may include at least one of germanium, tin, or silicon. For example, the second precursor 120 may have a chemical formula BC(1)-D(1), or BC(1)-C(1)-D(1), or BC(2)-D(1)D(2), or BD(3)-C(2)-C(2)-D(1)D(2), or BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein B is a first portion and D(1), D(2), D(3), D(4), and D(5) are additional portions, and wherein B and each of D(1), D(2), D(3), D(4), and D(5) independently comprise at least one of germanium, tin, or silicon. In some examples, C(1) may be one of tellurium, sulfur, or selenium. In some examples, C(2) may be one of antimony, arsenic, or phosphorus. In some examples, C(3) can be one of silicon, germanium, or tin.

[0021] In some examples, the base material 105 may be a structure on a substrate (e.g., a wafer). In some such examples, the base material 105 may span in a first direction and a second direction, where the first direction is orthogonal to the second direction. Furthermore, a memory device including the base material 105 may include word lines extending along the first direction and / or the second direction and bit lines extending along a third direction orthogonal to the first and second directions. In some such examples, a material stack (e.g., a sequence of materials) may be formed in one or more recesses of the word lines, where the stack may extend along the first direction and / or the second direction and where the sequence of materials may include a memory cell (e.g., a chalcogenide element). In some examples, the techniques described herein may be used to form a compound on the base material 105, the word lines, the bit lines, the stack, or any combination thereof.

[0022] Figure 2 An example of a metal deposition process 200 is illustrated that supports atomic layer deposition using tin-based or germanium-based precursors, consistent with examples as disclosed herein.

[0023] like Figure 2As illustrated in FIG, layer 210 may be exposed to a first precursor 205. The first precursor, for example, includes at least one element from Group XIII, Group XIV, or Group XV. In some examples, the reaction of the first precursor 205 with the layer 210 may form a byproduct 225-a, which may be removed from the reactor. After forming the first compound 220, the first compound 220 may be exposed to a second precursor 215, wherein the second precursor may include at least one of germanium, tin, silicon, tellurium, sulfur, antimony, arsenic, phosphorus, or selenium. The second precursor 215 may react with the first compound 220 to form a second compound 230. In some examples, the second precursor 215 may form a layer on the first compound 220, and the layer may react with the first compound 220 to form the second compound 230. In other examples, the second precursor 215 may react directly with the first compound 220 to form the second compound 230. This reaction may produce a byproduct 225, which may be removed from the reactor.

[0024] In some examples, the second compound 230 can be exposed to the first precursor 205 to form a second instance of the first compound on the second compound 230. In some examples, the first precursor can form a layer on the second compound 230, and the layer can react with the second compound 230 to form the second instance of the first compound. In other examples, the first precursor 205 can react directly with the second compound 230 to form the second instance of the first compound. This reaction can produce a byproduct 225-c, which can be removed from the reactor. Without departing from the scope of the present disclosure, the second instance of the first compound can be replaced by a third compound different from the first compound. In some examples, the process can be repeated to deposit multiple layers of the second compound 230. For example, if the second instance of the first compound is used as the first compound 220 and the second compound 230 is used as the layer 210, the process can be repeated again. In some examples, the first precursor 205 and the second precursor 215 can be delivered to the reactor using an inert gas (e.g., argon, helium, nitrogen). Additionally or alternatively, the byproducts 225-a, 225-b, and / or 225-c can be purged using an inert gas (eg, argon, helium, nitrogen).

[0025] In some examples, the first precursor 205 may include at least one of Group XIII, Group XIV, or Group XV elements. Examples of Group XIII elements may include boron, aluminum, gallium, indium, and thallium. Examples of Group XIV elements may include carbon, silicon, germanium, tin, and lead. Examples of Group XV elements may include nitrogen, phosphorus, arsenic, antimony, and bismuth. An example of the first precursor may include Ge(OEt)4, where "Ge" may correspond to germanium, "O" may correspond to oxygen, and "Et" may correspond to an ethyl group. Another example of the first precursor may be As(OEt)3, where "As" may correspond to arsenic, "O" may correspond to oxygen, and "Et" may correspond to an ethyl group. Another example of the first precursor may be SbCl3, where "Sb" may correspond to antimony and "Cl" may correspond to chlorine. Another example of the first precursor may be GeCl4, where "Ge" may correspond to germanium and "Cl" may correspond to chlorine.

[0026] In some examples, C(1) may be tellurium, sulfur, or selenium and B may be defined by the formula R1R2R3A, where A is at least one of germanium, tin, or silicon and D(1) may be defined by the formula XR4R5R6, where X is at least one of germanium, tin, or silicon and each of R1, R2, R3, R4, R5, or R6 may be independently selected from hydrogen (or deuterium); an alkyl group; an aryl group; an alkoxy group; an alkyl-sulfide; an alkyl-selenide; a halide, or an alkyl-telluride. In addition or more, each of R1; R2; R3; R4; R5 or R6 can be independently selected from cyanide; isocyanide; cyanate; isocyanate; thiocyanate; isothiocyanate; selenocyanate; isoselenocyanate; tellurium cyanate; isotellurium cyanate; azide; fulminate; isoflavone; an amide comprising two substituents which can be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents); or a hydrazide comprising three substituents which can be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents). In addition or alternatively, each of R1, R2, R3, R4, R5 or R6 can be independently selected from -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CRa R b SiR c R d R e Part;-SiR a R b GeR c R d R e A moiety; or more generally, a moiety containing a group of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof. For example, each atom of the group of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is fully saturated with a corresponding substituent such that each of these (carbon, silicon, germanium, or tin) atoms has 4 bonds, and the substituents may be other (carbon, silicon, germanium, or tin) atoms of the group or denoted as R a to R x (wherein the substituents may be indexed by a, b, c, ..., x, where x is some index different from a) corresponding substituents. In some of these examples, up to 10 carbon, silicon, germanium, or tin atoms may be included in the group, which are different from R a to R x Any carbon, silicon, germanium or tin atom in the substituent. In addition, the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof may be linear, branched or cyclic. In some examples, R a to R x The alkyl group may be independently selected from hydrogen (or deuterium); alkyl; aryl; alkoxy; alkyl-sulfide; alkyl-selenide; halide; alkyl-telluride; cyanide; isocyanide; cyanate; isocyanate; thiocyanate; isothiocyanate; selenocyanate; isoselenocyanate; telluriumcyanate; isotelluriumcyanate; azide; fulminate; isoflavone; an amide comprising two substituents which may be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents); or a hydrazide comprising three substituents which may be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents). In some examples, each of R1, R2, R3, R4, R5, or R6 is the same element or the same compound. In examples where B is defined by the formula R1R2R3A and where D(1) is defined by the formula XR4R5R6, where each of A and X is at least one of germanium, tin, or silicon, the second precursor 215 may have the following form:

[0027]

[0028] In some examples, C(2) may be arsenic, phosphorus, or antimony, and B may be defined by the formula R1R2R3A, where A is at least one of germanium, tin, or silicon, and D(1), D(2), and D(3) may be defined by the formulas X1R4R5R6, X2R7R8R9, X3R 10 R 11 R 12 Definition, wherein each of X1, X2 and X3 is at least one of germanium, tin or silicon and R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 、R 11 and R 12 Each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 、R 11 and R 12 Each of the compounds may be independently selected from cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurium cyanate, isotellurium cyanate, azide, fulminate, isoflavone, an amide comprising two substituents selected from alkyl substituents, silyl substituents (e.g., silyl substituents having hydrogen, deuterium, or alkyl substituents), or germyl substituents (e.g., germyl substituents having hydrogen, deuterium, or alkyl substituents), or a hydrazide comprising three substituents selected from alkyl substituents, silyl substituents (e.g., silyl substituents having hydrogen, deuterium, or alkyl substituents), or germyl substituents (e.g., germyl substituents having hydrogen, deuterium, or alkyl substituents). Additionally or alternatively, R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 、R 11 and R 12 Each of which can be independently selected from -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a Rb GeR c R d R e A moiety; or more generally, a moiety containing a group of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof. For example, each atom of the group of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is fully saturated with a corresponding substituent such that each of these (carbon, silicon, germanium, or tin) atoms has 4 bonds, and the substituents may be other (carbon, silicon, germanium, or tin) atoms of the group or denoted as R a to R x (wherein said substituents may be indexed by a, b, c, ..., x, where x is some index different from a). In some of these examples, up to 10 carbon, silicon, germanium, or tin atoms may be included in the group, which are different from R a to R x Any carbon, silicon, germanium or tin atom in the substituent. In addition, the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof may be linear, branched or cyclic. In some examples, R a to R x The alkyl group may be independently selected from hydrogen (or deuterium); alkyl; aryl; alkoxy; alkyl-sulfide; alkyl-selenide; halide; alkyl-telluride; cyanide; isocyanide; cyanate; isocyanate; thiocyanate; isothiocyanate; selenocyanate; isoselenocyanate; telluriumcyanate; isotelluriumcyanate; azide; fulminate; isoflavone; an amide comprising two substituents which may be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents); or a hydrazide comprising three substituents which may be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents). In some examples, R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 、R 11 and R 12 Each of the elements is the same element or the same compound. Wherein B is defined by the formula R1R2R3A and wherein D(1), D(2) and D(3) are defined by the formula X1R4R5R6, X2R7R8R9, X3R 10 R 11 R 12 In the defined example, wherein each of A, X1, X2, and X3 is at least one of germanium, tin, or silicon, the second precursor 215 may have the following form:

[0029]

[0030] In some examples, C(3) may be germanium or tin, and B may be defined by the formula R1R2R3A, where A is at least one of germanium, tin, or silicon, and D(1), D(2), D(3), D(4), and D(5) may be defined by the formulas X1R4R5R6, X2R7R8R9, X3R 10 R 11 R 12 、X4R 13 R 14 R 15 、X5R 16 R 17 R 18 Definition, wherein each of X1, X2, X3, X4 and X5 is at least one of germanium, tin or silicon and R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 、R 16 、R 17 and R 18 Each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R10, R11 10 、R 11 、R 12 、R 13 、R 14 、R 15 、R 16 、R 17 and R 18 Each of can be independently selected from cyanide, isocyanide, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate, isoselenocyanate, tellurium cyanate, isotellurium cyanate, azide, fulminate, isofulminate. Additionally or alternatively, R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15、R 16 、R 17 and R 18 Each of which can be independently selected from -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e A moiety; or more generally, a moiety containing a group of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof. For example, each atom of the group of carbon atoms, silicon atoms, germanium atoms, tin atoms, or any combination thereof is fully saturated with a corresponding substituent such that each of these (carbon, silicon, germanium, or tin) atoms has 4 bonds, and the substituents may be other (carbon, silicon, germanium, or tin) atoms of the group or denoted as R a to R x (wherein said substituents may be indexed by a, b, c, ..., x, where x is some index different from a). In some of these examples, up to 10 carbon, silicon, germanium, or tin atoms may be included in the group, which are different from R a to R x Any carbon, silicon, germanium or tin atom in the substituent. In addition, the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof may be linear, branched or cyclic. In some examples, R a to R xThe alkyl group may be independently selected from hydrogen (or deuterium); alkyl; aryl; alkoxy; alkyl-sulfide; alkyl-selenide; halide; alkyl-telluride; cyanide; isocyanide; cyanate; isocyanate; thiocyanate; isothiocyanate; selenocyanate; isoselenocyanate; telluriumcyanate; isotelluriumcyanate; azide; fulminate; isoflavone; an amide comprising two substituents which may be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents); or a hydrazide comprising three substituents which may be selected from alkyl substituents; silyl substituents (e.g., silyl having hydrogen, deuterium or alkyl substituents) or germyl substituents (e.g., germyl having hydrogen, deuterium or alkyl substituents). In some examples, R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 、R 11 、R 12 、R 13 、R 14 、R 15 、R 16 、R 17 and R 18 Each of the elements is the same element or the same compound. Wherein B is defined by the formula R1R2R3A and wherein D(1), D(2), D(3), D(4) and D(5) are defined by the formula X1R4R5R6, X2R7R8R9, X3R 10 R 11 R 12 、X4R 13 R 14 R 15 、X5R 16 R 17 R 18 In the defined example, wherein each of A, X1, X2, X3, X4, and X5 is at least one of germanium, tin, or silicon, the second precursor 215 may have the following form:

[0031]

[0032] In one example, the first precursor 205 may have the chemical formula Ge(OEt)4 and the second precursor 215 may have the chemical formula R1R2R3A-Se-ZR4R5R6, where "Ge" may refer to germanium, "O" may refer to oxygen, "Et" may refer to ethyl, and "Se" may refer to selenium. In some such examples, the second compound 230 may be GeSe2 and the byproducts 225 may be EtO-AR1R2R3 and EtO-ZR4R5R6. This reaction can be represented by the formula 2R1R2R3A-Se-ZR4R5R6 + Ge(OEt)4 → GeSe2 (deposition) + 2EtO-AR1R2R3 (volatiles) + 2EtO-ZR4R5R6 (volatiles).

[0033] In another example, the first precursor 205 may have the chemical formula As(OEt)3 and the second precursor 215 may have the chemical formula R1R2R3A-Se-XR4R5R6, where "As" may refer to germanium, "O" may refer to oxygen, "Et" may refer to ethyl, and "Se" may refer to selenium. In some such examples, the second compound 230 may be As2Se3 and the byproducts 225 may be EtO-AR1R2R3 and EtO-XR4R5R6. This reaction can be represented by the formula 3R1R2R3A-Se-XR4R5R6 + 2As(OEt)3 → As2Se3 (deposition) + 3EtO-AR1R2R3 (volatiles) + 3EtO-XR4R5R6 (volatiles).

[0034] In another example, the first precursor 205 may have the chemical formula SbCl3 and the second precursor 215 may have the chemical formula R1R2R3A-Sb-(X1R4R5R6)(X2R7R8R9), where "Sb" may refer to antimony and "Cl" may refer to chlorine. In some such examples, the second compound 230 may be Sb and the byproducts 225 may be Cl-AR1R2R3, Cl-X1R4R5R6, and Cl-X2R7R8R9. This reaction can be represented by the formula R1R2R3A-Sb-(X1R4R5R6)(X2R7R8R9)+SbCl3→2Sb(deposited)+Cl-AR1R2R3(volatiles)+Cl-X1R4R5R6(volatiles)+Cl-X2R7R8R9(volatiles).

[0035] In another example, the first precursor 205 may have the chemical formula Cl3Ge-GeCl3 and the second precursor 215 may have the chemical formula R1R2R3A-Se-(XR4R5R6), where "Se" may refer to selenium and "Cl" may refer to chlorine. In some such examples, the second compound 230 may be Ge2Se3 and the byproducts 225 may be Cl-AR1R2R3 and Cl-XR4R5R6. This reaction can be represented by the formula 3R1R2R3A-Se-(XR4R5R6) + 2Cl3Ge-GeCl3 → 2Ge2Se3 (deposition) + 3Cl-AR1R2R3 (volatiles) + 3Cl-XR4R5R6 (volatiles).

[0036] In another example, the first precursor 205 can be a germanium(II) amidinate (or any other germanium(II) compound) having the chemical formula Ge(AMD)2, and the second precursor 215 can have the chemical formula R1R2R3A-Se-(XR4R5R6), where "Se" can refer to selenium and "AMD" can refer to the amidinate ligand. In some such examples, the second compound 230 can be GeSe, and the byproducts 225 can be AMD-AR1R2R3, AMD-XR4R5R6. This reaction can be represented by the formula R1R2R3A-Se-(XR4R5R6)+Ge(AMD)2→GeSe(deposition)+AMD-AR1R2R3(volatiles)+AMD-XR4R5R6(volatiles).

[0037] In another example, the first precursor 205 may have a chemical formula of GeCl4 and the second precursor 215 may have a chemical formula of R1R2R3A-Ge-(X1R4R5R6)(X2R7R8R9)(X3R 10 R 11 R 12 ), where "Ge" may refer to germanium and "Cl" may refer to chlorine. In some of these examples, the second compound 230 may be Ge and the byproduct 225 may be Cl-AR1R2R3, Cl-X1R4R5R6, Cl-X2R7R8R9, and Cl-X3R 10 R 11 R 12 This reaction can be represented by the formula R1R2R3A-Ge-(X1R4R5R6)(X2R7R8R9)(X3R 10 R 11 R 12 )+GeCl4→2Ge(deposition)+Cl-AR1R2R3(volatiles)+Cl-X1R4R5R6(volatiles)+Cl-X2R7R8R9(volatiles)+Cl-X3R 10 R 11 R 12(Volatile) indicates.

[0038] In some examples, the term 'alkyl' may refer to a group containing 1 carbon atom (eg, C1) to 10 carbon atoms (eg, C 10 ) of a saturated hydrocarbon chain, an unsaturated hydrocarbon chain, a straight hydrocarbon chain, a branched hydrocarbon chain, or a cyclic hydrocarbon chain.

[0039] In some examples, "methyl" may refer to a compound having the chemical formula CH3, where "C" may refer to carbon and "H" may refer to hydrogen. In some examples, "ethyl" may refer to a compound having the chemical formula CH2CH3. In some examples, "propyl" may refer to a compound having the chemical formula CH2CH2CH3. In some examples, "isopropyl" may refer to a compound having the chemical formula CH(CH3)2. In some examples, an alkyl may refer to a compound having the chemical formula C n H 2n+1 wherein n is an integer greater than or equal to 1. In some examples, sulfide may refer to an inorganic anion of sulfur, selenide may refer to an inorganic anion of selenium, and telluride may refer to an inorganic anion of tellurium. In some examples, dialkylamide may refer to an amide group having two alkyl groups.

[0040] In some examples, methoxy may refer to a methyl group bonded to oxygen. In some examples, ethoxy may refer to an ethyl group bonded to oxygen. In some examples, dimethylamino may be a moiety having the formula N(CH3)2, where "C" may refer to carbon, "H" may refer to hydrogen, and "N" may refer to nitrogen. In some examples, diethylamino may be a moiety having the formula N(CH2CH3)2. In some examples, ethylmethylamino may be a moiety having the formula N(CH2CH3)(CH3).

[0041] In some examples, an alkyl group may refer to a group having the chemical formula C n H (2n+1) wherein n is an integer greater than or equal to 1. In some examples, an alkyl-sulfide may refer to a -SR moiety, where R is an alkyl group, an alkyl-selenide may refer to a -SeR moiety, where R is an alkyl group, and an alkyl-telluride may refer to a -TeR moiety, where R is an alkyl group. In some examples, a dialkylamide may refer to an amide moiety having two alkyl groups, such as -NR'R", where R' and R" are alkyl groups.

[0042] In some examples, the methods or aspects of the methods described herein can be performed using chemical vapor deposition (CVD). For example, the first precursor 205 can be deposited using CVD and the second precursor can be reacted with the first compound 220 via the methods described herein, the first compound 220 can be formed by reacting with the first precursor 205 via the methods described herein and the second precursor 215 can be deposited onto the first compound 220 using CVD, or both the first precursor 205 and the second precursor 215 can be deposited using CVD.

[0043] Independently comprising or selected from a group of elements and / or compounds can mean that a first element or compound can be substituted with another while still resulting in the ability for a precursor to be used to form a compound on the surface of the material.

[0044] It should be noted that there may be instances where the second precursor 215 may react with the layer 210 to form a third compound. In some such instances, the first precursor 205 may react with the third compound to form a fourth compound. The process may be repeated to form multiple layers of selenide-based films, tellurium-based films, sulfur-based films, antimony-based films, arsenic-based films, phosphorus-based films, germanium-based films, tin-based films, or any combination thereof.

[0045] Although the second compound 230 can be introduced and reacted with the first precursor 205 and the second precursor 215 sequentially (i.e., in an ABAB... sequence), the precursors can be introduced in a different order than described above (e.g., in a BABA... sequence, an AABAAB... sequence, an ABBABB sequence) depending on the composition of the second compound 230. For example, the first precursor 205 can be introduced followed by the second precursor 215. Depending on the composition of the second compound 230, more than one introduction (e.g., pulse) of the first precursor 205 or the second precursor 215 can be performed, followed by the introduction of the second precursor 215 or the first precursor 205, respectively.

[0046] In some examples, the first molecule of the first precursor 205 (i.e., precursor 1-a) and the second molecule of the second precursor 215 (i.e., precursor 2-a) may be repeatedly introduced for one or more cycles (e.g., AA times or AA cycles, where AA is a positive integer). After the repeated introduction of precursors 1-a and 2-a over multiple cycles, the third molecule of the first precursor 205 (i.e., precursor 1-b) and the fourth molecule of the second precursor (i.e., precursor 2-b) may be repeatedly introduced for one or more cycles (e.g., BB times or BB cycles, where BB is a positive integer). This process may be continued for a variety of other precursors up to a predetermined amount (e.g., up to CC times or CC cycles for precursors 1-c and 2-c, up to DD times or DD cycles for precursors-d and 2-d, and so on, up to XX times or XX cycles for precursors 1-x and 2-x, where CC, DD, and XX are all positive integers). After the process has continued for a predetermined amount, the process can be repeated (e.g., Precursors 1-a and 2-a can be used again for AA times or AA cycles). It should be noted that each of the molecules used as precursors for each cycle can be selected from the same molecule from a different cycle or different molecule than that described herein for the first precursor 205 and the second precursor 215.

[0047] In some such examples, a third precursor may react with the layer of second compound 230 to form another compound on the layer of second compound 230. Additionally, a fourth precursor may react with other compounds to form a second material layer on the layer of second compound 230. In some such examples, a set of X precursor pairs may be identified, wherein each precursor pair in the set of X precursor pairs comprises one of the first set of precursors and one of the second set of precursors, wherein each precursor pair has an associated number of cycles, wherein X is an integer greater than or equal to 2, wherein each precursor in the second set of precursors has a chemical formula of BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2) -D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety independently comprising at least one of germanium, tin, or silicon, and wherein C(1) comprises tellurium, sulfur, or selenium, wherein C(2) comprises antimony, arsenic, and phosphorus, and wherein C(3) comprises silicon, germanium, or tin. Notably, the moiety represented by B, D(1), D(2), D(3), D(4), D(5), or any combination thereof, may be different for different precursors of the second set of precursors and the elements comprised by C(1), C(2), and C(3) may be different for different precursors of the second set of precursors. Additionally, according to the number of cycles associated with each precursor pair in the set of X precursor pairs and to form the corresponding film associated with the precursor pair, reaction of one of the first set of precursors to form the corresponding compound and reaction of one of the second set of precursors with the corresponding compound to form one or more layers may be performed.

[0048] The methods described herein can have one or more advantages. For example, the use of germanium and / or tin in the first precursor 205 can enable reactions (e.g., forming the first compound 220 and / or forming the second compound 230) to occur at lower temperatures, as compared to precursors that do not include germanium and / or tin (e.g., trimethylsilyl precursors). Additionally or alternatively, the use of germanium and / or tin in the first precursor 205 can enable deposition to occur faster for a given temperature, as compared to precursors that do not include germanium and / or tin.

[0049] Figure 3An example of an electronic device 300 is described that supports atomic layer deposition using tin-based or germanium-based precursors, consistent with examples disclosed herein. The electronic device 300 may include a substrate material 305 having one or more features 310 (e.g., pillars, stacks), wherein the substrate material 305 and the one or more features 310 may be covered in a material 315. Each feature 310 may include materials 320, 325, 330, 335, and 340, wherein each of the materials 320, 325, 330, 335, and 340 may be an example of a chalcogenide material, an organic (e.g., carbon) material, a carbon allotrope (e.g., graphite), a reactive metal (e.g., tungsten, aluminum, or tantalum), a heat-sensitive material, an oxygen-sensitive material, or any combination thereof. Some of the materials 320, 325, 330, 335, and 340 may be examples of other materials. In some examples, the base material 305 or the combination of the base material 305 and one or more features 310 can be as described in reference Figure 1 The base material 105 or as reference Figure 2 In addition or more, the material 315 may be as described in reference Figure 1 The second compound 125 or as reference Figure 2 An example of the second compound 20.

[0050] Although Figure 3 A feature 310 comprising five materials is illustrated. Each feature can be made of a single material, two or more materials, or five materials. The features can be separated from each other by openings 322. The materials of the features 310 can be formed adjacent to (e.g., on) a base material 305 using techniques such as photolithography, physical vapor deposition (PVD), chemical vapor deposition (CVD), or ALD. In some examples, the base material 305 can include one or more materials, layers, structures, or regions thereon. The features 310 can be considered high aspect ratio (HAR) features, where the HAR can correspond to, for example, an aspect ratio greater than or equal to 10:1, an aspect ratio greater than or equal to 20:1, an aspect ratio greater than or equal to 25:1, or an aspect ratio greater than or equal to 50:1. In some examples, the material 315 can be formed on one, but not both, of the base material 305 and one or more features 310. Additionally or alternatively, the material 315 can be formed as a material within each of the one or more features 310. Additionally or alternatively, the material 315 may be formed on planar materials or low aspect ratio features of the electronic device.

[0051] According to aspects described herein, the material 315 can be formed over the feature 310. For example, the material 315 can be formed by sequentially exposing the feature 310 of the electronic device 300 to a first precursor (e.g., the first precursor 205) and a second precursor (e.g., the second precursor 215). The material 315 can function as a conductive component of the electronic device 300, such as a transistor, a capacitor, an electrode, an etch stop material, a gate, a barrier material, or a spacer material. One or more materials and / or structures (e.g., a gate) can be sequentially formed in the opening 322 using techniques such as photolithography, PVD, CVD, or ALD, and / or other methods performed to form a complete electronic device including the electronic device 300.

[0052] According to aspects described herein, the material 315 can be conformally formed on the feature 310. For example, the thickness of the material 315 can be substantially uniform on the sidewalls of the feature 310. For example, the material 315 can be formed to a thickness ranging from a monolayer to 100 nm. Alternatively, the material 315 can be formed at a greater thickness. The material 315 can be in direct contact with each material of the feature 310 or some of the materials of the feature 310. Additionally or alternatively, the material 315 can be in contact with the substrate material 305.

[0053] In some examples, the base material 305 may be a structure on a substrate (e.g., a wafer). In some such examples, the base material 305 may span in a first direction and a second direction, wherein the first direction is orthogonal to the second direction. In addition, a memory device including the base material 305 may include word lines extending along the first direction and / or the second direction and bit lines extending along a third direction orthogonal to the first and second directions. In some such examples, a material stack (e.g., a sequence of materials, such as stack 310) may be formed in one or more recesses of the word lines, wherein the stack may extend along the first direction and / or the second direction and wherein the sequence of materials may include memory cells (e.g., chalcogenide elements). In some examples, the stacks may each be coupled to a word line and a bit line. In some examples, the techniques described herein may be used to form a carbon layer on the base material 305, the word lines, the bit lines, the stack, or any combination thereof.

[0054] Figure 4 A block diagram 400 is shown of a controller 420 that supports atomic layer deposition using tin-based or germanium-based precursors, consistent with the examples disclosed herein. The controller 420 may be a controller such as that described in reference Figures 1 to 34. The controller 420 or its various components may be examples of means for performing various aspects of atomic layer deposition using tin-based or germanium-based precursors as described herein. For example, the controller 420 may include a reaction component 425, a formation component 430, an exposure component 435, or any combination thereof. Each of these components may communicate directly or indirectly with each other (e.g., via one or more buses).

[0055] The reaction assembly 425 can be configured to or otherwise support a means of reacting a first precursor with a substrate material to form a first compound comprising a first element on the substrate material, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element. In some examples, the reaction component 425 can be constructed as or originally supports reacting a second precursor with the first compound to form a second compound on the substrate material, wherein the second precursor has a chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective portion independently comprising at least one of germanium, tin, or silicon, and wherein C(1) comprises tellurium, sulfur, or selenium, wherein C(2) comprises antimony, arsenic, and phosphorus, and wherein C(3) comprises silicon, germanium, or tin.

[0056] In some examples, the reaction assembly 425 can be configured or originally supports reacting a third precursor with the second compound to form a third compound on the second compound, wherein the third precursor comprises at least one of an element from Group XIII, Group XIV, or Group XV. In some examples, the reaction assembly 425 can be configured or originally supports reacting a fourth precursor with the third compound to form a fourth compound on the second compound, wherein the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

[0057] In some examples, the reaction assembly 425 can be configured to or otherwise support components for identifying a set of X precursor pairs, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein X is an integer greater than or equal to 2, wherein each precursor in the first set of precursors comprises a Group XIII, Group XIV, or Group XV element, and wherein each precursor in the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon. In some examples, the reaction assembly 425 can react one of the first set of precursors to form a corresponding first compound and one of the second set of precursors with the first compound to form a corresponding second compound, based on the associated number of cycles for each precursor pair in the set of X precursor pairs and to form a corresponding film associated with the precursor pair.

[0058] In some examples, B comprises the formula R1R2R3A. In some examples, A comprises at least one of germanium, tin, or silicon for B. In some examples, each of R1, R2, and R3 is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having hydrogen, deuterium, or alkyl substituents) or a germyl substituent (e.g., a germyl having hydrogen, deuterium, or alkyl substituents); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having hydrogen, deuterium, or alkyl substituents) or a germyl substituent (e.g., a germyl having hydrogen, deuterium, or alkyl substituents); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiRa R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0059] In some examples, each of R1, R2, and R3 comprises the same element or the same compound.

[0060] In some examples, D(1) has the chemical formula X1R4R5R6, D(2) has the chemical formula X2R7R8R9, and D(3) has the chemical formula X3R 10 R 11 R 12 , D(4) has the chemical formula X4R 13 R14 R 15 , and D(5) has the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of the above or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium or alkyl substituent); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium or alkyl substituent); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isoflavone; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、Rb 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0061] In some examples, each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of or any combination of comprises the same element or compound.

[0062] The forming assembly 430 may be configured or originally supported as a means for forming a plurality of material stacks on a substrate. The exposing assembly 435 may be configured or originally supported as a means for exposing the plurality of material stacks to a first precursor to form a first compound comprising a first element on the plurality of material stacks, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element. In some examples, the exposure component 435 can be configured to or otherwise support exposing a plurality of material stacks to a second precursor to form a feature comprising a second compound on the plurality of material stacks, wherein the second precursor has a chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective portion independently comprising at least one of germanium, tin, or silicon, and wherein C(1) comprises tellurium, sulfur, or selenium, wherein C(2) comprises antimony, arsenic, and phosphorus, and wherein C(3) comprises silicon, germanium, or tin.

[0063] In some examples, the exposure assembly 435 can be configured or intended to support exposing the second compound to a third precursor to form a member comprising the third compound on the plurality of material stacks, wherein the third precursor comprises at least one of a Group XIII, Group XIV, or Group XV element. In some examples, the exposure assembly 435 can be configured or intended to support exposing the third compound to a fourth precursor to form a fourth compound on the second compound, wherein the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

[0064] In some examples, the exposure assembly 435 can be configured to or otherwise support means for identifying a set of X precursors, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein X is an integer greater than 2, wherein each precursor in the first set of precursors comprises at least one of a Group XIII, Group XIV, or Group XV element, and wherein each precursor in the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon. In some examples, the exposure assembly can be configured to or otherwise support means for exposing one of the first set of precursors to form a corresponding first compound and exposing the corresponding first compound to one of the second set of precursors to form a corresponding second compound, based on the associated number of cycles for each precursor pair in the set of X precursor pairs and to form a corresponding film associated with the precursor pair.

[0065] In some examples, B comprises the formula R1R2R3A. In some examples, A comprises at least one of germanium, tin, or silicon. In some examples, each of R1, R2, and R3 is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having hydrogen, deuterium, or alkyl substituents) or a germyl substituent (e.g., a germyl having hydrogen, deuterium, or alkyl substituents); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having hydrogen, deuterium, or alkyl substituents) or a germyl substituent (e.g., a germyl having hydrogen, deuterium, or alkyl substituents); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R ePart;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0066] In some examples, each of R1, R2, and R3 comprises the same element or the same compound.

[0067] In some examples, D(1) has the chemical formula X1R4R5R6, D(2) has the chemical formula X2R7R8R9, and D(3) has the chemical formula X3R 10 R 11 R 12 , D(4) has the chemical formula X4R13 R 14 R 15 , and D(5) has the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of the above or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium or alkyl substituent); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium or alkyl substituent); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isoflavone; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent Ra 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); a hydrazide comprising three substituents which may be selected from an alkyl substituent; a silyl substituent (e.g., a silyl having a hydrogen, deuterium, or alkyl substituent) or a germyl substituent (e.g., a germyl having a hydrogen, deuterium, or alkyl substituent); an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide; an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0068] In some examples, each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of or any combination of comprises the same element or compound.

[0069] Figure 5A flow chart illustrating a method 500 is shown that supports atomic layer deposition using tin-based or germanium-based precursors, consistent with the examples disclosed herein. The operations of the method 500 may be implemented by a controller or components thereof as described herein. For example, the operations of the method 500 may be implemented by a controller as described in reference to Figures 1 to 4 The controller may perform the functions described. In some examples, the controller may execute a set of instructions to control the functional elements of the device to perform the functions described. Additionally or alternatively, the controller may use dedicated hardware to perform aspects of the functions described.

[0070] At 505, the method may include reacting a first precursor with a substrate material to form a first compound comprising a first element on the substrate material, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element. The operation of 505 may be performed according to the examples disclosed herein. In some examples, aspects of the operation of 505 may be performed as described in reference to Figure 4 The reaction component 425 is carried out.

[0071] At 510, the method may include reacting a second precursor with the first compound to form a second compound on the substrate material, wherein the second precursor has a chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective moiety independently comprising at least one of germanium, tin, or silicon, and wherein C(1) comprises tellurium, sulfur, or selenium, wherein C(2) comprises antimony, arsenic, and phosphorus, and wherein C(3) comprises silicon, germanium, or tin. The operation of 510 may be performed according to examples as disclosed herein. In some examples, aspects of the operation of 510 may be described by referring to Figure 4 The reaction component 425 is carried out.

[0072] In some examples, an apparatus as described herein may perform one or more methods, such as method 500. The apparatus may include features, circuits, logic, components, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor), or any combination thereof, for performing the following aspects of the present disclosure:

[0073] Aspect 1: A method, apparatus, or non-transitory computer-readable medium comprising operations, features, circuits, logic, means, or instructions, or any combination thereof, for reacting a first precursor with a substrate material to form a first compound comprising a first element on the substrate material, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element, and reacting a second precursor with the first compound to form a second compound on the substrate material, the second precursor comprising a chemical formula BC(1)-D(1), BC(1)-C(1)-D (1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3) or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4) and D(5) is a respective portion independently comprising at least one of germanium, tin or silicon, and wherein C(1) comprises tellurium, sulfur or selenium, wherein C(2) comprises antimony, arsenic and phosphorus, and wherein C(3) comprises silicon, germanium or tin.

[0074] Aspect 2: The method, apparatus, or non-transitory computer-readable medium of Aspect 1, further comprising operations, features, circuits, logic, components, or instructions, or any combination thereof, for reacting a third precursor with the second compound to form a third compound on the second compound, wherein the third precursor comprises at least one of Group XIII, Group XIV, or Group XV elements; and reacting a fourth precursor with the third compound to form a fourth compound on the second compound, wherein the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

[0075] Aspect 3: The method, apparatus, or non-transitory computer-readable medium of aspect 2, further comprising operations, features, circuitry, logic, means, or instructions, or any combination thereof, for: identifying a set of X precursor pairs, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein X is an integer greater than or equal to 2, wherein each precursor in the first set of precursors comprises a Group XIII, Group XIV, or Group XV element, and wherein each precursor in the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon; and conducting, based on the associated number of cycles for each precursor pair in the set of X precursor pairs and to form a corresponding film associated with the precursor pair, reacting one of the first set of precursors to form a corresponding first compound and reacting one of the second set of precursors with the first compound to form a corresponding second compound.

[0076] Aspect 4: The method, apparatus, or non-transitory computer-readable medium of any one of aspects 1 to 3, wherein B comprises a chemical formula R1R2R3A; A comprises at least one of germanium, tin, or silicon for B; and each of R1, R2, and R3 is independently selected from hydrogen; deuterium; an alkyl group; an aryl group; an alkoxy group; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises a hydrogen substituent, a deuterium substituent, or an alkyl substituent. one or more; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiRc R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0077] Aspect 5: The method, apparatus, or non-transitory computer-readable medium of aspect 4, wherein each of R1, R2, and R3 comprises the same element or the same compound.

[0078] Aspect 6: The method, apparatus, or non-transitory computer-readable medium according to any one of aspects 1 to 5, wherein (1) comprises a chemical formula X1R4R5R6, D(2) comprises a chemical formula X2R7R8R9, and D(3) comprises a chemical formula X3R 10 R 11 R 12 , D(4) contains the chemical formula X4R 13 R 14 R 15 , D(5) contains the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 each or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiRc R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0079] Aspect 7: The method, apparatus, or non-transitory computer-readable medium of aspect 6, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of or any combination of comprises the same element or compound.

[0080] Figure 6 A flow chart illustrating a method 600 is shown that supports atomic layer deposition using tin-based or germanium-based precursors, consistent with the examples disclosed herein. The operations of method 600 may be implemented by a controller or components thereof as described herein. For example, the operations of method 600 may be implemented by a controller as described in reference to Figures 1 to 4 The controller may perform the functions described. In some examples, the controller may execute a set of instructions to control the functional elements of the device to perform the functions described. Additionally or alternatively, the controller may use dedicated hardware to perform aspects of the functions described.

[0081] At 605, the method may include forming a plurality of material stacks on a substrate. The operations of 605 may be performed according to examples disclosed herein. In some examples, aspects of the operations of 605 may be performed as described in reference to Figure 4 The forming component 430 is performed.

[0082] At 610, the method may include exposing a plurality of material stacks to a first precursor to form a first compound comprising a first element on the plurality of material stacks, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element. The operation of 610 may be performed according to examples disclosed herein. In some examples, aspects of the operation of 610 may be performed as described in reference to Figure 4 The exposed component 435 is carried out.

[0083] At 615, the method may include exposing the plurality of material stacks to a second precursor to form a second compound on the plurality of material stacks, wherein the second precursor has a chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective portion independently comprising at least one of germanium, tin, or silicon, and wherein C(1) comprises tellurium, sulfur, or selenium, wherein C(2) comprises antimony, arsenic, and phosphorus, and wherein C(3) comprises silicon, germanium, or tin. The operation of 615 may be performed according to examples as disclosed herein. In some examples, aspects of the operation of 615 may be described by referring to Figure 4The exposed component 435 is carried out.

[0084] In some examples, an apparatus as described herein may perform a method, such as method 600. The apparatus may include features, circuits, logic, components, or instructions (e.g., a non-transitory computer-readable medium storing instructions executable by a processor), or any combination thereof, for performing the following aspects of the present disclosure:

[0085] Aspect 8: A method, apparatus, or non-transitory computer-readable medium comprising operations, features, circuits, logic, means, or instructions, or any combination thereof, for forming a plurality of material stacks on a substrate; exposing the plurality of material stacks to a first precursor to form a first compound comprising a first element on the plurality of material stacks, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element; and exposing the plurality of material stacks to a second precursor to form a second compound on the plurality of material stacks, wherein the second precursor comprises a chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3) or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), and wherein each of B, D(1), D(2), D(3), D(4) and D(5) is a respective portion independently comprising at least one of germanium, tin or silicon, and wherein C(1) comprises tellurium, sulfur or selenium, wherein C(2) comprises antimony, arsenic and phosphorus, and wherein C(3) comprises silicon, germanium or tin.

[0086] Aspect 9: The method, apparatus, or non-transitory computer-readable medium of Aspect 8, further comprising operations, features, circuits, logic, components, or instructions, or any combination thereof, for the following steps: exposing the second compound to a third precursor to form a third compound on the plurality of material stacks, wherein the third precursor comprises at least one of Group XIII, Group XIV, or Group XV elements; and exposing the third compound to a fourth precursor to form a fourth compound on the second compound, wherein the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

[0087] Aspect 10: The method, apparatus, or non-transitory computer-readable medium of aspect 9, further comprising operations, features, circuitry, logic, means, or instructions, or any combination thereof, for: identifying a set of X precursors, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein X is an integer greater than 2, wherein each precursor in the first set of precursors comprises at least one of a Group XIII, Group XIV, or Group XV element, and wherein each precursor in the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon; and performing, based on the associated number of cycles for each precursor pair in the set of X precursor pairs and to form a corresponding film associated with the precursor pair, exposing the corresponding first compound to one of the first set of precursors to form a corresponding first compound and exposing the corresponding first compound to one of the second set of precursors to form a corresponding second compound.

[0088] Aspect 11: The method, apparatus, or non-transitory computer-readable medium of any one of aspects 8 to 10, wherein B comprises a chemical formula R1R2R3A; A comprises at least one of germanium, tin, or silicon for B; and each of R1, R2, and R3 is independently selected from hydrogen; deuterium; an alkyl group; an aryl group; an alkoxy group; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises a hydrogen substituent, a deuterium substituent, or an alkyl substituent. ; a hydrazide comprising three substituents selected from the group consisting of an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a Rb SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0089] Aspect 12: The method, apparatus, or non-transitory computer-readable medium of aspect 11, wherein each of R1, R2, and R3 comprises the same element or the same compound.

[0090] Aspect 13: The method, apparatus, or non-transitory computer-readable medium of any one of aspects 8 to 12, wherein D(1) comprises the chemical formula X1R4R5R6, D(2) comprises the chemical formula X2R7R8R9, and D(3) comprises the chemical formula X3R 10 R 11 R 12 , D(4) contains the chemical formula X4R 13 R 14 R 15 , D(5) contains the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 each or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiRc R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0091] Aspect 14: The method, apparatus, or non-transitory computer-readable medium of aspect 13, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of or any combination of comprises the same element or compound.

[0092] It should be noted that the methods described herein are possible implementations, and that the operations and steps described may be rearranged or otherwise modified and that other implementations are possible. Additionally, portions from two or more of the methods described may be combined.

[0093] An apparatus is described. The following provides an overview of aspects of the apparatus as described herein.

[0094] Aspect 15: An apparatus comprising: a plurality of material stacks on a substrate, at least one material in the plurality of material stacks comprising a memory material; and a film formed on the plurality of material stacks by exposing the plurality of material stacks to a first precursor to form a first compound comprising a first element on the plurality of material stacks and exposing the plurality of material stacks to a second precursor to form a second compound on the plurality of material stacks, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element and the second precursor comprises a chemical formula BC(1)-D(1) , BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3) or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), and wherein each of B, D(1), D(2), D(3), D(4) and D(5) is a respective portion that independently comprises at least one of germanium, tin or silicon, and wherein C(1) comprises tellurium, sulfur or selenium, wherein C(2) comprises antimony, arsenic and phosphorus, and wherein C(3) comprises silicon, germanium or tin.

[0095] Aspect 16: The apparatus of Aspect 15, further comprising: a second film formed on the film by exposing the film to a third precursor to form a third compound on the plurality of material stacks and exposing the fourth compound to a fourth precursor to form a fourth compound on the film, wherein the third precursor comprises at least one of Group XIII, Group XIV, or Group XV elements and the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

[0096] Aspect 17: The apparatus of aspect 16, further comprising: a set of films, wherein each of the set of films is associated with a precursor pair from a set of X precursor pairs, wherein each precursor pair from the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein each precursor from the first set of precursors comprises a Group XIII, Group XIV, or Group XV element, wherein each precursor from the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon, and wherein each of the set of films is formed by exposing each film to one of the first set of precursors to form a corresponding first compound and exposing the corresponding first compound to one of the second set of precursors to form a corresponding second compound according to an associated number of cycles for the associated precursor pair from the set of precursor pairs.

[0097] Aspect 18: The apparatus of any one of aspects 15 to 17, wherein B comprises a chemical formula R1R2R3A, A comprises at least one of germanium, tin, or silicon for B, and each of R1, R2, and R3 is independently selected from hydrogen; deuterium; an alkyl group; an aryl group; an alkoxy group; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; Hydrazides containing three substituents selected from the group consisting of alkyl substituents, silyl substituents, and germyl substituents, wherein one or more of the silyl substituents and the germyl substituents comprise one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; alkyl-sulfides; alkyl-selenides; halides; alkyl-tellurides; cyanides, isocyanides; cyanates; isocyanates; thiocyanates; isothiocyanates; selenocyanates; isoselenocyanates; tellurium cyanates; isotellurium cyanates; azides; fulminates; isofulminates; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R ePart;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0098] Aspect 19: The apparatus of aspect 18, wherein each of R1, R2, and R3 comprises the same element or the same compound.

[0099] Aspect 20: The apparatus according to any one of aspects 15 to 19, wherein D(1) comprises the chemical formula X1R4R5R6, D(2) comprises the chemical formula X2R7R8R9, and D(3) comprises the chemical formula X3R 10 R11 R 12 , D(4) contains the chemical formula X4R 13 R 14 R 15 , D(5) contains the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 each or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a R b GeR c R d Re or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

[0100] Aspect 21: The apparatus of aspect 20, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of or any combination of comprises the same element or compound.

[0101] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0102] As used herein, "and / or" includes any and all combinations of one or more of the associated listed items.

[0103] As used herein, the term "substantially" with reference to a given parameter, property, or condition means and encompasses the degree to which one of ordinary skill in the relevant art would understand that the given parameter, property, or condition satisfies a degree of variance, such as within acceptable manufacturing tolerances. For example, depending on the particular parameter, property, or condition that is substantially satisfied, the parameter, property, or condition may be at least 90.0% satisfied, at least 95.0% satisfied, at least 99% satisfied, or at least 99.9% satisfied.

[0104] As used herein, spatially relative terms such as "adjacent," "below," "beneath," "below," "bottom," "above," "up," "top," "in front of," "behind," "to the left of," "to the right of," and the like may be used for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. Unless otherwise specified, the spatially relative terms are intended to encompass different orientations of the material in addition to the orientation depicted in the figures. For example, if the material in the figures were inverted, terms described as "below" or "beneath" or "under" or "under" or "under the other element or feature" would be oriented "above" or "on top of" the other element or feature. Thus, the term "below" can encompass both an above and below orientation, depending on the context in which the term is used, as would be apparent to one of ordinary skill in the relevant art. The material may be oriented in other ways (e.g., rotated 90°, inverted, flipped), and the spatially relative descriptions used herein should be interpreted accordingly.

[0105] As used herein, the term "electronic device" may include, without limitation, memory devices and semiconductor devices that may or may not incorporate memory, such as logic devices, processor devices, or radio frequency (RF) devices. Furthermore, an electronic device may incorporate memory in addition to other functions, such as, for example, a so-called "system on a chip" (SoC) that includes a processor and memory, or an electronic device that includes logic and memory. The electronic device may be a 3D electronic device, such as a 3D dynamic random access memory (DRAM) memory device, a 3D cross-point memory device, or a 3D phase change random access memory (PCRAM) memory device.

[0106] As used herein, the term "substrate" means and includes the foundation materials and structures on which components are formed, such as components within a semiconductor device or an electronic device. The substrate may be a semiconductor substrate, a base material, a base semiconductor material on a support structure, a metal electrode, or a semiconductor substrate having one or more materials, structures, or regions formed thereon. The substrate may be a conventional silicon substrate or other bulk substrate comprising semiconductor material. As used herein, the term "bulk substrate" means and includes not only silicon wafers, but also silicon-on-insulator ("SOI") substrates (such as silicon-on-sapphire ("SOS") substrates or silicon-on-glass ("SOG") substrates), silicon epitaxial layers on a base semiconductor foundation, or other semiconductor or optoelectronic materials (such as, in particular, silicon-germanium (Si 1-x Ge x , where x is a mole fraction, for example, between 0.2 and 0.8), germanium (Ge), gallium arsenide (GaAs), gallium nitride (GaN), or indium phosphide (InP). Furthermore, when reference is made to a "substrate" in the following description, previous process steps may have been utilized to form materials, regions, or junctions in or on the base semiconductor structure or foundation.

[0107] As used herein, the terms "layer" and "level" refer to an organization (e.g., a layer, a sheet) of a geometric structure (e.g., relative to a substrate). Each layer or level can have three dimensions (e.g., height, width, and depth) and can cover at least a portion of a surface. For example, a layer or level can be a three-dimensional structure in which two dimensions are greater than the third, such as a thin film. A layer or level can include different elements, components, or materials. In some examples, a layer or level can be composed of two or more sub-layers or sub-levels.

[0108] As used herein, the term "electrode" may refer to an electrical conductor and, in some examples, may serve as an electrical contact to a memory cell or other component in a memory array. An electrode may include a trace, wire, conductor, conductive layer, or the like that provides an electrically conductive path between components in a memory array.

[0109] The devices discussed herein, including memory arrays, can be formed on a semiconductor substrate such as silicon, germanium, a silicon-germanium alloy, gallium arsenide, gallium nitride, and the like. In some examples, the substrate is a semiconductor wafer. In other examples, the substrate can be a silicon-on-insulator (SOI) substrate such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP) or an epitaxial layer of semiconductor material on another substrate. The conductivity of the substrate or a subregion of the substrate can be controlled by doping with various chemical species, including but not limited to phosphorus, boron, or arsenic. Doping can be performed by ion implantation during the initial formation or growth of the substrate or by any other doping method.

[0110] The description set forth herein, in conjunction with the accompanying drawings, describes exemplary configurations and does not represent all examples that may be implemented or within the scope of the claims. The term "exemplary" is used herein to mean "serving as an example, instance, or illustration" and not "preferred" or "superior to other examples." The embodiments described include specific details to provide an understanding of the technology. However, these technologies can be practiced without these specific details. In some examples, well-known structures and devices are shown in block diagram form to avoid obscuring the concepts of the examples.

[0111] In the accompanying drawings, similar components or features may have the same reference label. Additionally, various components of the same type may be distinguished by following the reference label with a dash and a second label that distinguishes the similar components. If only the first reference label is used in this specification, the description applies to any of the similar components having the same first reference label, regardless of the second reference label.

[0112] The functions described herein may be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functions may be stored on a computer-readable medium or transmitted as one or more instructions (e.g., code) on a computer-readable medium. Other examples and implementations are within the scope of this disclosure and the appended claims. For example, due to the nature of software, the functions described herein may be implemented using software executed by a processor, hardware, firmware, hardwiring, or a combination of any of these. Features implementing the functions may also be physically located at various locations, including being distributed so that a portion of the functions are implemented at different physical locations.

[0113] For example, the various illustrative blocks and modules described herein in conjunction with the disclosure may be implemented or performed using a processor designed to perform the functions described herein, such as a DSP, an ASIC, an FPGA, discrete gate logic, discrete transistor logic, discrete hardware components, other programmable logic devices, or any combination thereof. A processor may be an example of a microprocessor, a controller, a microcontroller, a state machine, or any other type of processor. A processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration).

[0114] As used herein, including in the claims, "or" as used in a list of clauses (e.g., a list of clauses beginning with a phrase such as "at least one of" or "one or more of") indicates an inclusive list such that, for example, a list of at least one of A, B, or C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C). Likewise, as used herein, the phrase "based on" should not be construed as referring to a closed group of conditions. For example, an exemplary step described as "based on condition A" can be based on both condition A and condition B without departing from the scope of this disclosure. In other words, as used herein, the phrase "based on" should be interpreted in the same manner as the phrase "based at least in part on."

[0115] Computer-readable media include non-transient computer storage media and communication media including any medium that promotes a computer program to be transferred from one place to another.Non-transient storage media can be any available medium that can be accessed by a computer. For example and without limitation, non-transient computer-readable media may include RAM, ROM, electrically erasable programmable read-only memory (EEPROM), compact disc (CD) ROM or other optical disk storage, magnetic disk storage or other magnetic storage device, or can be used to carry or store required program code components and any other non-transient medium that can be accessed by a computer or processor in the form of an instruction or data structure. Likewise, any connection is appropriately referred to as a computer-readable medium. For example, if software is transmitted from a website, server or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL) or wireless technology (such as infrared, radio and microwave), then coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL) or wireless technology (such as infrared, radio and microwave) are included in the definition of medium. As used herein, disk and disc include CDs, laser discs, optical discs, digital versatile discs (DVDs), floppy disks, and Blu-ray discs where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above are also included within the scope of computer-readable media.

[0116] The description herein is provided to enable one skilled in the relevant art to make or use the present disclosure. Various modifications of the present disclosure will be apparent to those skilled in the relevant art, and the general principles defined herein may be applied to other variations without departing from the scope of the present disclosure. Therefore, the present disclosure is not limited to the examples and designs described herein, but should be given the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method comprising: reacting a first precursor with a substrate material to form a first compound comprising a first element on the substrate material, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element; and A second precursor is reacted with the first compound to form a second compound on the substrate material, the second precursor comprising a chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective portion independently comprising at least one of germanium, tin, or silicon, and wherein C(1) comprises tellurium, sulfur, or selenium, wherein C(2) comprises antimony, arsenic, and phosphorus, and wherein C(3) comprises silicon, germanium, or tin.

2. The method according to claim 1, further comprising: reacting a third precursor with the second compound to form a third compound on the second compound, wherein the third precursor comprises at least one of a Group XIII, Group XIV, or Group XV element; and A fourth precursor is reacted with the third compound to form a fourth compound on the second compound, wherein the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

3. The method according to claim 2, further comprising: identifying a set of X precursor pairs, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein X is an integer greater than or equal to 2, wherein each precursor in the first set of precursors comprises a Group XIII, Group XIV, or Group XV element, and wherein each precursor in the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon; The reaction of the one of the first set of precursors to form a corresponding first compound and the reaction of the one of the second set of precursors with the first compound to form a corresponding second compound are performed according to the associated number of cycles for each precursor pair in the set of X precursor pairs and to form a corresponding film associated with the precursor pair.

4. The method according to claim 1, wherein B comprises the chemical formula R1R2R3A, and A comprises at least one of germanium, tin, or silicon for B, and Each of R1, R2 and R3 is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isoflavone; an -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e part; -CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; amides comprising two substituents selected from alkyl substituents, silyl substituents, and germyl substituents, wherein one or more of the silyl substituents and the germyl substituents comprise one or more of hydrogen substituents, deuterium substituents, or alkyl substituents; hydrazides comprising three substituents selected from alkyl substituents, silyl substituents, and germyl substituents, wherein one or more of the silyl substituents and the germyl substituents comprise one or more of hydrogen substituents, deuterium substituents, or alkyl substituents; alkyl-sulfides; alkyl-selenides; halides; alkyl-tellurides; cyanides, isocyanides; cyanates; isocyanates; thiocyanates; isothiocyanates; selenocyanates; isoselenocyanates; Tellurium cyanate; isotellurium cyanate; azide; fulminate; or isofulminate. The method of claim 4 , wherein each of R1, R2, and R3 comprises the same element or the same compound.

6. The method according to claim 1, wherein D(1) contains the chemical formula X1R4R5R6, D(2) contains the chemical formula X2R7R8R9, and D(3) contains the chemical formula X3R 10 R 11 R 12 , D(4) contains the chemical formula X4R 13 R 14 R 15 , D(5) contains the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 each or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or Isofulanate.

7. The method of claim 6, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of or any combination of comprises the same element or compound.

8. A method comprising: forming a plurality of material stacks on a substrate; exposing the plurality of material stacks to a first precursor to form a first compound comprising a first element on the plurality of material stacks, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element; and The plurality of material stacks are exposed to a second precursor to form a second compound on the plurality of material stacks, wherein the second precursor comprises a chemical formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1)D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3), or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), and wherein each of B, D(1), D(2), D(3), D(4), and D(5) is a respective portion that independently comprises at least one of germanium, tin, or silicon, and wherein C(1) comprises tellurium, sulfur, or selenium, wherein C(2) comprises antimony, arsenic, and phosphorus, and wherein C(3) comprises silicon, germanium, or tin.

9. The method according to claim 8, comprising: exposing the second compound to a third precursor to form a third compound on the plurality of material stacks, wherein the third precursor comprises at least one of a Group XIII, Group XIV, or Group XV element; and The third compound is exposed to a fourth precursor to form a fourth compound on the second compound, wherein the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

10. The method according to claim 9, comprising: identifying a set of X precursors, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein X is an integer greater than 2, wherein each precursor in the first set of precursors comprises at least one of a Group XIII, Group XIV, or Group XV element, and wherein each precursor in the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon; and The exposure of the one of the first set of precursors to form a corresponding first compound and the exposure of the corresponding first compound to the one of the second set of precursors to form a corresponding second compound are performed according to the associated number of cycles for each precursor pair in the set of X precursor pairs and to form a corresponding film associated with the precursor pair.

11. The method according to claim 8, wherein B contains the chemical formula R1R2R3A, A comprises at least one of germanium, tin, or silicon for B, and Each of R1, R2 and R3 is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isoflavone; an -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e part; -CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate. 12 . The method of claim 11 , wherein each of R1, R2, and R3 comprises the same element or the same compound.

13. The method according to claim 8, wherein D(1) contains the chemical formula X1R4R5R6, D(2) contains the chemical formula X2R7R8R9, and D(3) contains the chemical formula X3R 10 R 11 R 12 , D(4) contains the chemical formula X4R 13 R 14 R 15 , D(5) contains the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 each or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x Fully saturated and containing 1 to 10 substituents different from the corresponding R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

14. The method of claim 13, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 Each of or any combination of comprises the same element or compound.

15. An apparatus comprising: a plurality of material stacks on a substrate, at least one material in the plurality of material stacks comprising a memory material; and A film formed on the plurality of material stacks by exposing the plurality of material stacks to a first precursor to form a first compound comprising a first element on the plurality of material stacks and exposing the plurality of material stacks to a second precursor to form a second compound on the plurality of material stacks, wherein the first compound comprises at least one of a Group XIII, Group XIV, or Group XV element and the second precursor comprises a compound of the formula BC(1)-D(1), BC(1)-C(1)-D(1), BC(2)-D(1 )D(2), BD(3)-C(2)-C(2)-D(1)D(2), BC(3)-D(1)D(2)D(3) or BD(4)D(5)-C(3)-C(3)-D(1)D(2)D(3), and wherein each of B, D(1), D(2), D(3), D(4) and D(5) is a respective portion that independently comprises at least one of germanium, tin or silicon, and wherein C(1) comprises tellurium, sulfur or selenium, wherein C(2) comprises antimony, arsenic and phosphorus, and wherein C(3) comprises silicon, germanium or tin.

16. The apparatus of claim 15, further comprising: a second film formed on the film by exposing the film to a third precursor to form a third compound on the plurality of material stacks and exposing the fourth compound to a fourth precursor to form a fourth compound on the film, wherein the third precursor comprises at least one of a Group XIII, Group XIV, or Group XV element and the fourth precursor comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to a first portion and a second portion, the first portion and the second portion independently comprising at least one of germanium, tin, or silicon.

17. The apparatus of claim 16, further comprising: A set of films, wherein each of the films in the set is associated with a precursor pair in a set of X precursor pairs, wherein each precursor pair in the set of X precursor pairs comprises one of a first set of precursors and one of a second set of precursors, wherein each precursor pair has an associated number of cycles, wherein each precursor in the first set of precursors comprises a Group XIII, Group XIV, or Group XV element, wherein each precursor in the second set of precursors comprises one of tellurium, sulfur, antimony, arsenic, phosphorus, selenium, germanium, or tin bonded to two or more moieties, wherein each of the two or more moieties independently comprises germanium, tin, or silicon, and wherein each of the films in the set is formed by exposing each film to the one of the first set of precursors to form a corresponding first compound and exposing the corresponding first compound to the one of the second set of precursors to form a corresponding second compound according to an associated number of cycles for the associated precursor pair in the set of precursor pairs.

18. The apparatus of claim 15, wherein B contains the chemical formula R1R2R3A, A comprises at least one of germanium, tin, or silicon for B, and Each of R1, R2 and R3 is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isoflavone; an -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e part; -CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x fully saturated and containing 1 to 10 substituents R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

19. The apparatus of claim 18, wherein each of R1, R2, and R3 comprises the same element or the same compound.

20. The apparatus of claim 15, wherein D(1) contains the chemical formula X1R4R5R6, D(2) contains the chemical formula X2R7R8R9, and D(3) contains the chemical formula X3R 10 R 11 R 12 , D(4) contains the chemical formula X4R 13 R 14 R 15 , D(5) contains the chemical formula X5R 16 R 17 R 18 or any combination thereof, wherein each of X1, X2, X3, X4, and X5 comprises at least one of germanium, tin, or silicon, wherein each of R4, R5, and R6; each of R7, R8, and R9; R 10 、R 11 and R 12 Each of R 13 、R 14 and R 15 Each of R 16 、R 17 and R 18 each or any combination thereof is independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; an isofulminate; -SiR a R b R c Part;-GeR a R b R c Part;-SnR a R b R c Part;-SiR a R b CR c R d R e Partial;-CR a R b SiR c R d R e Part;-SiR a R b GeR c R d R e or a group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof, each of which is replaced by a corresponding substituent R a 、R b 、R c 、R d 、R e ,……,R x Fully saturated and containing 1 to 10 substituents different from the corresponding R a 、R b 、R c 、R d 、R e ,……,R x any carbon, silicon, germanium or tin atom, silicon atom, germanium atom, tin atom or any combination thereof, wherein R x x is different from R a wherein the group of carbon atoms, silicon atoms, germanium atoms, tin atoms or any combination thereof is linear, branched or cyclic; and wherein R a 、R b 、R c 、R d 、R e ,……,R x independently selected from hydrogen; deuterium; alkyl; aryl; alkoxy; an amide comprising two substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; a hydrazide comprising three substituents selected from an alkyl substituent, a silyl substituent, and a germyl substituent, wherein one or more of the silyl substituent and the germyl substituent comprises one or more of a hydrogen substituent, a deuterium substituent, or an alkyl substituent; an alkyl-sulfide; an alkyl-selenide; a halide; an alkyl-telluride; a cyanide, an isocyanide; a cyanate; an isocyanate; a thiocyanate; an isothiocyanate; a selenocyanate; an isoselenocyanate; a tellurium cyanate; an isotellurium cyanate; an azide; a fulminate; or an isofulminate.

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