Chemical vapor deposition device

Abstract

The invention provides a chemical vapor deposition device. The chemical vapor deposition device comprises a cavity; the bearing platform is arranged in the cavity and is used for bearing a wafer; the gas flow guide assembly is rotationally arranged in the cavity and sleeves the bearing platform, and the gas flow guide assembly is provided with a suction port and is used for pumping out gas near the bearing platform; and the driver is connected with the gas flow guide assembly and used for driving the gas flow guide assembly to rotate so as to adjust the orientation of the suction port. According to the chemical vapor deposition device provided by the invention, the rotatable gas flow guide assembly is arranged in the cavity, and the driver is used for driving the gas flow guide assembly to rotate according to actual conditions, so that the distribution of gas flow in the cavity is effectively controlled; the problems that in the prior art, in the wafer coating process, the edge of a thin film deviates, and particles are locally accumulated in a cavity are solved, and the coverage of the wafer deposition thin film is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer surface coating, and in particular to a chemical vapor deposition device. Background Art

[0002] In the back-end of semiconductor manufacturing, chemical vapor deposition (CVD) is often used to deposit silicon carbonitride (SiCN) thin films as a diffusion barrier layer for copper (Cu), preventing the vertical diffusion of Cu. To ensure the barrier capability of the SiCN film and reduce voids in the film, a multi-layer SiCN stacking method is often used for deposition.

[0003] A chemical vapor deposition chamber in the prior art adopts a multi-station design, such as Figure 1 As shown, the chamber 100 has four stations 101. A single wafer passes through four independent stations 101 in sequence to complete specific deposition steps (such as pre-deposition, main deposition, post-processing, etc.). The wafer is deposited once in each station 101 to ensure film coverage. Figure 2 As shown, since the pump port 102 of the process chamber is located at both ends of each station 101, the air flow is unevenly distributed, which in turn causes the edge of the SiCN film to shift. The position of the shift is shown in FIG. Figure 2 In addition, as Figure 3 As shown, the uneven airflow distribution may also cause the pollution particles 200 to accumulate in the area where the pump suction force is weak. Summary of the Invention

[0004] The present application aims to provide a chemical vapor deposition device to solve the problems of film edge deviation and particle accumulation in the local chamber during wafer coating in the prior art.

[0005] To achieve the above object, the present invention provides a chemical vapor deposition apparatus, comprising: cavity; A carrying platform, disposed in the cavity, for carrying the wafer; a gas guide assembly rotatably disposed in the cavity and sleeved with the carrying platform, the gas guide assembly having a suction port for extracting gas near the carrying platform; A driver is connected to the gas guide assembly and is used to drive the gas guide assembly to rotate so as to adjust the direction of the suction port.

[0006] The beneficial effect of the chemical vapor deposition device provided by the present invention is that: by arranging a rotatable gas guide component in the cavity, the driver is used to drive the gas guide component to rotate according to actual conditions, thereby effectively controlling the distribution of airflow in the cavity, solving the problems of film edge deviation and local accumulation of particles in the chamber during wafer coating in the prior art, and improving the coverage of the wafer deposited film.

[0007] In some embodiments, the gas flow guide assembly includes a hollow first housing that is sleeved onto the support platform. A plurality of suction ports are formed on the sidewall of the first housing at the same height, and the plurality of suction ports are evenly spaced. This advantageously improves the reliability of regulating the airflow distribution within the cavity during the suction process by providing the plurality of suction ports at equal intervals on the sidewall of the first housing.

[0008] In some embodiments, the gas guide assembly further includes a transmission member; The transmission member is connected to the first sleeve, and an outer side wall of the transmission member is provided with a transmission portion, which is connected to a power output end of the driver.

[0009] In some embodiments, the transmission member is an annular structure, and a plurality of first connecting holes are provided on the surface of the transmission member close to the first sleeve. A plurality of first connecting parts are provided on the bottom end surface of the first sleeve corresponding to the plurality of first connecting holes, and the first connecting parts are adapted to be connected with the first connecting holes so that the transmission member is coaxially arranged with the first sleeve.

[0010] In some embodiments, the transmission portion is a gear structure annularly arranged on the outer side wall of the transmission member; A driving gear is provided at the power output end of the driver, and the driving gear is meshed with the gear structure.

[0011] In some embodiments, an annular blocking portion is provided on the edge of the transmission member, the blocking portion being located between the gear structure and the bottom of the first housing, and configured to abut against the drive gear and the gear structure. This advantageously provides the advantage of providing an annular blocking portion on the edge of the transmission member to abut against the drive gear and the gear structure, thereby ensuring reliable meshing between the drive gear and the gear structure.

[0012] In some embodiments, the gas guide assembly plate further includes a bottom plate, and the bottom plate is provided with an annular sliding groove; A guide protrusion is provided on the lower end surface of the transmission member, corresponding to the sliding groove. The transmission member is mounted on the chassis so that the guide protrusion is movable within the sliding groove. This advantageously improves the stability of the gas guide assembly during rotation by mounting the transmission member on the chassis and cooperating with the sliding groove, thereby enabling better diversion of the gas within the cavity.

[0013] In some embodiments, the chassis and the transmission member are both made of ceramic material. The beneficial effect is that the wear resistance between the transmission member and the chassis is improved by using ceramic material on the contact surface of the chassis and the transmission member.

[0014] In some embodiments, the gas guide assembly further includes a hollow second sleeve, the second sleeve being coaxially arranged with the first sleeve and connected to the top end of the first sleeve; The second sleeve cooperates with the first sleeve to separate the interior of the cavity into a deposition chamber and a suction chamber, and the suction port connects the deposition chamber and the suction chamber.

[0015] In some embodiments, the bottom end surface of the second sleeve is provided with a plurality of second connecting portions, the top end surface of the first sleeve is provided with a plurality of second connecting holes corresponding to the plurality of second connecting portions, and the second connecting holes cooperate with the second connecting portions to coaxially connect the second sleeve with the first sleeve; or The second housing and the first housing are integrally formed. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the structure of an existing chemical vapor deposition chamber; Figure 2 A schematic diagram of the structure of a film edge shift caused by deposition on a wafer surface using an existing chemical vapor deposition chamber; Figure 3 A schematic diagram of the structure of contamination particles appearing in an existing chemical vapor deposition chamber; Figure 4 A schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention; Figure 5 A top view of a chemical vapor deposition apparatus according to an embodiment of the present invention; Figure 6 A schematic structural diagram of an airflow guide assembly according to an embodiment of the present invention; Figure 7 An exploded view of an airflow guide assembly according to an embodiment of the present invention; Figure 8 A top view of a transmission member according to an embodiment of the present invention; Figure 9 A bottom view of a transmission member according to an embodiment of the present invention; Figure 10 This is a schematic structural diagram of the chassis of an embodiment provided by the present invention.

[0017] Reference numerals: Chamber 1, deposition chamber 11, suction chamber 12, carrying platform 2, gas guide assembly 3, first sleeve 31, suction port 311, first connecting part 312, second connecting hole 313, transmission part 32, first connecting hole 321, gear structure 322, blocking part 323, guide protrusion 324, chassis 33, sliding groove 331, second sleeve 34, second connecting part 341, driver 4, driving gear 41, chamber 100, workstation 101, pump port 102, and contaminated particles 200. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the usual meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Unless otherwise specified, the "connection" described in this article can be a direct connection or an indirect connection, that is, a connection through an intermediate.

[0019] See also Figure 4 and Figure 5 The present invention provides a chemical vapor deposition device, comprising a chamber 1, a carrying platform 2, a gas guide component 3 and a driver 4. The carrying platform 2 is arranged in the chamber 1 for carrying wafers. The gas guide component 3 is rotatably arranged in the chamber 1, and is sleeved with the carrying platform 2, and maintains a certain distance from the carrying platform 2 and the inner side wall of the chamber 1 to separate the chamber 1 into a deposition chamber 11 and a suction chamber 12. The carrying platform 2 is located in the deposition chamber 11, and the gas guide component 3 has a suction port 311. The suction port 311 connects the deposition chamber 11 and the suction chamber 12 so that the gas in the deposition chamber 11 is extracted and guided to the suction chamber 12, and finally discharged from the suction chamber 12. The driver 4 is located on the side of the gas guide component 3 and is connected to the gas guide component 3, and is used to drive the gas guide component 3 to rotate to adjust the direction of the suction port 311.

[0020] In this embodiment, a rotatable gas guide component 3 is provided in the cavity 1, and the driver 4 is used to drive the gas guide component 3 to rotate according to actual needs, thereby effectively controlling the distribution of the airflow in the cavity 1, solving the problems of film edge deviation and local accumulation of particles in the chamber during the process of wafer film deposition in the prior art, and improving the coverage of the wafer deposited film.

[0021] For example, when the chemical vapor deposition device provided in this embodiment is used to perform four thin film depositions on the wafer, after the first thin film deposition is completed, the controller can control the driver 4 to drive the gas guide component 3 to rotate 60°, and then perform the second thin film deposition. This method is used until the fourth thin film deposition process is completed to improve the coverage of the thin film on the wafer surface.

[0022] It should be noted that in the prior art, due to the cavity structure, multiple deposition reactions cannot be performed in one chemical vapor deposition reaction chamber, because this will only continue to aggravate the problem of film edge deviation. In order to ensure the coverage of the film in the prior art, the reaction chamber is designed with multiple stations, and the wafer is deposited multiple times, that is, the wafer is transferred to different reaction chambers for multiple depositions. However, due to the uneven distribution of airflow due to the structure of each cavity itself, the problem of film edge deviation cannot be effectively solved. After the improvement, the present application can perform multiple depositions through one cavity, and also ensures the uniformity and coverage of the thin film deposition on the wafer surface, while reducing costs.

[0023] In some embodiments, the chemical vapor deposition apparatus provided herein may include four chambers 1, each of which is provided with the supporting platform 2, the gas guide assembly 3, and the driver 4. Therefore, in this embodiment, a thin film deposition process can be performed sequentially through each chamber 1, and multiple thin film depositions can be performed in each chamber to further improve the coverage of the thin film on the wafer surface.

[0024] refer to Figures 4 to 6 As shown, in some embodiments, the gas guide assembly 3 includes a hollow first sleeve 31, which is sleeved on the supporting platform 2, and the side wall of the first sleeve 31 is provided with multiple suction ports 311 at the same height, and the multiple suction ports 311 are arranged at equal intervals.

[0025] In this embodiment, the first housing 31 can be made of ceramic material to improve the structural reliability of the first housing 31. Furthermore, by evenly disposing multiple suction ports 311 at the same height of the first housing 31, the reliability of the airflow distribution adjustment within the chamber 1 during the suction process is improved.

[0026] In some specific embodiments, the number of the suction ports 311 is two, and the suction ports 311 are in a long strip shape.

[0027] refer to Figures 5 to 7 As shown, in some embodiments, the gas guide assembly 3 further includes a transmission member 32, which is located below the first housing 31 and fixedly connected to the first housing 31. The outer wall of the transmission member 32 has a transmission portion, which is connected to the power output end of the driver 4.

[0028] In this embodiment, when the driver 4 rotates, it drives the transmission part to move, thereby driving the first sleeve 31 to rotate, thereby adjusting the direction of the suction port 311.

[0029] refer to Figures 4 to 9 As shown, in some embodiments, the transmission member 32 is an annular structure. The surface of the transmission member 32 close to the first sleeve 31 is provided with a plurality of first connection holes 321. The plurality of first connection holes 321 are spaced apart along the top surface of the transmission member 32. The bottom surface of the first sleeve 31 is provided with a plurality of first connection portions 312 corresponding to the plurality of first connection holes 321. The first connection portions 312 are adapted to connect with the first connection holes 321, and the transmission member 32 and the first sleeve 31 are coaxially arranged after being connected.

[0030] In this embodiment, the first connecting portion 312 is a pin structure protruding from the bottom end surface of the first sleeve 31, and the first connecting hole 321 is a pin hole adapted to the pin structure. By inserting the first connecting portion 312 into the first connecting hole 321, the first sleeve 31 is connected to the transmission member 32.

[0031] like Figure 9 As shown, in some embodiments, the transmission portion is a gear structure 322 annularly disposed on the outer wall of the transmission member 32. The power output end of the driver 4 is provided with a drive gear 41, which meshes with the gear structure 322. When the driver 4 rotates, the transmission member 32 is driven to rotate via the drive gear 41.

[0032] Furthermore, an annular blocking portion 323 is provided on the edge of the transmission member 32 . The blocking portion 323 is located between the gear structure 322 and the bottom of the first sleeve 31 . The blocking portion 323 is used to abut against the driving gear 41 and the gear structure 322 .

[0033] In this embodiment, an annular blocking portion 323 is provided on the edge of the transmission member 32 and above the gear structure 322 to prevent the drive gear 41 from disengaging from the gear structure 322, thereby ensuring the reliability of the meshing between the drive gear 41 and the gear structure 322. It should be noted that the transmission member 32 can also be made of ceramic material.

[0034] In some embodiments, the transmission part can be a belt, and the outer wall of the transmission member 32 is provided with a mounting groove. One end of the belt is mounted in the mounting groove, and the other end is connected to the power output end of the driver 4. Through such a design, the rotation adjustment of the gas guide component 3 can also be achieved.

[0035] refer to Figures 4 to 10 As shown, in some embodiments, the gas guide assembly 3 further includes a chassis 33, on which an annular sliding groove 331 is provided, and a guide protrusion 324 is provided on the lower end surface of the transmission member 32 corresponding to the sliding groove 331, and the transmission member 32 is arranged on the chassis 33 so that the guide protrusion 324 is movably located in the sliding groove 331.

[0036] In this embodiment, the annular sliding groove 331 is concentric with the base plate 33 and coaxial with the transmission member 32. By disposing the transmission member 32 on the base plate 33 and cooperating the guide protrusion 324 with the sliding groove 331, the stability of the gas guide assembly 3 during rotation is improved, thereby better diverting the gas in the chamber 1.

[0037] In some embodiments, the surface of the chassis 33 that contacts the transmission member 32 is made of ceramic. In some embodiments, the entire chassis 33 may be made of ceramic. It should be noted that the use of ceramic improves the wear resistance and heat resistance between the transmission member 32 and the chassis 33.

[0038] refer to Figures 4 to 7 As shown, in some embodiments, the gas guide assembly 3 also includes a hollow second sleeve 34, which is coaxially arranged with the first sleeve 31 and connected to the top of the first sleeve 31. The second sleeve 34 cooperates with the first sleeve 31 to separate the interior of the cavity 1 into the deposition chamber 11 and the suction chamber 12, and the suction port 311 connects the deposition chamber 11 and the suction chamber 12.

[0039] In this embodiment, the second housing 34 can be made of a ceramic material. By combining the first housing 31 and the second housing 34, the interior of the chamber 1 is divided into the deposition chamber 11 and the suction chamber 12. The provision of the suction port 311 connects the deposition chamber 11 and the suction chamber 12. In this way, when the gas guide assembly 3 rotates, it does not affect the regulation of the airflow in the deposition chamber 11.

[0040] In some embodiments, the bottom end surface of the second sleeve 34 is provided with a plurality of second connecting parts 341, and the plurality of second connecting parts 341 are arranged at intervals. The top end surface of the first sleeve 31 is provided with a plurality of second connecting holes 313 corresponding to the plurality of second connecting parts 341, and the second connecting holes 313 cooperate with the second connecting parts 341 to make the second sleeve 34 coaxially connected to the first sleeve 31.

[0041] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A chemical vapor deposition device, characterized in that: include: cavity; A carrying platform, disposed in the cavity, for carrying the wafer; a gas guide assembly rotatably disposed in the cavity and sleeved with the carrying platform, the gas guide assembly having a suction port for extracting gas near the carrying platform; A driver is connected to the gas guide assembly and is used to drive the gas guide assembly to rotate so as to adjust the direction of the suction port.

2. The chemical vapor deposition apparatus according to claim 1, wherein: The gas guide assembly includes a hollow first sleeve, which is sleeved on the carrying platform. The side wall of the first sleeve is provided with a plurality of suction ports at the same height, and the plurality of suction ports are arranged at equal intervals.

3. The chemical vapor deposition apparatus according to claim 2, wherein: The gas guide assembly further includes a transmission member; The transmission member is connected to the first sleeve, and an outer side wall of the transmission member is provided with a transmission portion, which is connected to a power output end of the driver.

4. The chemical vapor deposition apparatus according to claim 3, wherein: The transmission member is an annular structure, and a plurality of first connecting holes are provided on the surface of the transmission member close to the first sleeve. A plurality of first connecting parts are provided on the bottom end surface of the first sleeve corresponding to the plurality of first connecting holes. The first connecting parts are adapted to be connected with the first connecting holes so that the transmission member is coaxially arranged with the first sleeve.

5. The chemical vapor deposition apparatus according to claim 3 or 4, characterized in that: The transmission part is a gear structure arranged in an annular shape on the outer side wall of the transmission member; A driving gear is provided at the power output end of the driver, and the driving gear is meshed with the gear structure.

6. The chemical vapor deposition apparatus according to claim 5, characterized in that: An annular blocking portion is provided on the edge of the transmission member. The blocking portion is located between the gear structure and the bottom of the first sleeve. The blocking portion is used to abut against the driving gear and the gear structure.

7. The chemical vapor deposition apparatus according to claim 4, wherein: The gas guide assembly plate further includes a bottom plate, and the bottom plate is provided with an annular sliding groove; A guide protrusion is provided on the lower end surface of the transmission member corresponding to the sliding groove. The transmission member is arranged on the chassis so that the guide protrusion is movably located in the sliding groove.

8. The chemical vapor deposition apparatus according to claim 7, wherein: The chassis and the transmission member in contact are both made of ceramic material.

9. The chemical vapor deposition apparatus according to claim 2, wherein: The gas guide assembly further includes a hollow second sleeve, which is coaxially arranged with the first sleeve and connected to the top end of the first sleeve; The second sleeve cooperates with the first sleeve to separate the interior of the cavity into a deposition chamber and a suction chamber, and the suction port connects the deposition chamber and the suction chamber.

10. The chemical vapor deposition apparatus according to claim 9, wherein: The bottom end surface of the second sleeve is provided with a plurality of second connecting parts, and the top end surface of the first sleeve is provided with a plurality of second connecting holes corresponding to the plurality of second connecting parts, and the second connecting holes cooperate with the second connecting parts to enable the second sleeve to be coaxially connected to the first sleeve; or The second housing and the first housing are integrally formed.

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