Gas pipeline system for wafer manufacturing and control method

Abstract

A gas pipeline system for wafer manufacturing comprises a gas conveying pipeline, a control pipeline, an exhaust pipeline and a heat transfer gas pipeline. The control pipeline is connected with the gas conveying pipeline and used for controlling heat transfer gas to flow to the exhaust pipeline or the heat transfer gas pipeline. The control pipeline comprises a first branch and a second branch which are connected; the first end of the first branch is connected with a gas transmission pipeline through a flowmeter and a needle valve, and the second end is connected with an exhaust pipeline through a first valve; the third end of the second branch is connected with a gas conveying pipeline through the flowmeter, and the fourth end is connected with a heat transfer gas pipeline through a second valve; by opening the first valve and closing the second valve, the flow meter is used for measuring the gas flow of one path of the needle valve; by opening the second valve and closing the first valve, the same flow meter is used to measure the gas flow of the heat transfer gas pipeline. The invention further provides a gas pipeline control method, the same flow meter is reused by switching the valves, and the gas flow of the center and the edge of the wafer is accurately measured respectively.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer manufacturing, and specifically to a gas pipeline system and a control method for wafer manufacturing. Background Art

[0002] In the semiconductor wafer manufacturing process, wafer temperature control and adsorption stability are key factors affecting process accuracy. During the etching process, the wafer is adsorbed and fixed by the electrostatic chuck through electrostatic force. However, when the plasma bombards the wafer surface, a large amount of heat is generated. To prevent the wafer temperature from being too high and causing an inaccurate etch rate, a heat transfer gas, such as helium (He), is used to quickly remove the heat from the wafer surface. However, if there is a leak in the heat transfer gas, it may cause abnormal surface temperature cooling during the wafer manufacturing process, resulting in poor wafer quality. At the same time, the stability of the wafer's adsorption state on the electrostatic chuck will directly affect the film quality of the thin film on the wafer. If there are large fluctuations in the gas flow in the gas pipeline used for wafer manufacturing, the wafer may be blown away from the predetermined position, causing the risk of wafer deflection. The gas flow of the heat transfer gas can affect the state between the electrostatic chuck and the wafer. Therefore, accurately measuring the gas flow of the heat transfer gas is particularly important.

[0003] Based on this, it is necessary to design a gas pipeline system and a gas flow measurement method for wafer manufacturing to overcome the above problems.

[0004] It will be understood that the above statements merely provide background technology related to the present invention and do not necessarily constitute prior art. Summary of the Invention

[0005] The purpose of the present invention is to provide a gas pipeline system and control method for wafer manufacturing. By switching valves and reusing the same flow meter, the gas flow at the center and edge of the wafer can be directly measured while stabilizing the gas pipeline system, thereby judging the adsorption effect of the wafer.

[0006] To achieve the above-mentioned objectives, the first aspect of the present invention provides a gas pipeline system for wafer manufacturing, comprising: a gas supply pipeline, a control pipeline, an exhaust pipeline and a heat transfer gas pipeline; the control pipeline is connected to the gas supply pipeline, and is used to control the flow of heat transfer gas to the exhaust pipeline or the heat transfer gas pipeline; the control pipeline includes a first branch and a second branch connected.

[0007] Among them, the first end of the first branch is connected to the gas supply pipeline through a flow meter and a needle valve in sequence, and the second end is connected to the exhaust pipeline through a first valve; the third end of the second branch is connected to the gas supply pipeline through the flow meter, and the fourth end is connected to the heat transfer gas pipeline through a second valve; by opening the first valve and closing the second valve, the flow meter is used to measure the gas flow of the needle valve; by opening the second valve and closing the first valve, the same flow meter is used to measure the gas flow of the heat transfer gas pipeline.

[0008] Preferably, the second branch includes a flow measuring branch and a non-flow measuring branch, and the heat transfer gas pipeline includes a central heat transfer gas pipeline and an edge heat transfer gas pipeline; the central heat transfer gas pipeline and the edge heat transfer gas pipeline are switchably connected to the fifth end of the flow measuring branch and the seventh end of the non-flow measuring branch through a reversing device; the sixth end of the flow measuring branch is connected to the gas transmission pipeline through the flow meter, and the eighth end of the non-flow measuring branch is directly connected to the gas transmission pipeline.

[0009] Preferably, the second valve is further provided between the reversing device and the central heat transfer gas pipeline, and the third valve is further provided between the reversing device and the edge heat transfer gas pipeline.

[0010] Preferably, a fourth valve is provided between the needle valve and the flow meter, a third branch is connected in parallel to the needle valve and the fourth valve, and the second branch is connected to the gas pipeline through the third branch.

[0011] Preferably, a fifth valve is provided on the third branch.

[0012] Preferably, the control pipeline also includes a fourth branch, which is connected in parallel with the fourth valve, the flow meter and the first valve, and its ninth end is connected to the gas supply pipeline through the needle valve, and its tenth end is connected to the exhaust pipeline.

[0013] Preferably, a sixth valve is provided on the fourth branch.

[0014] Preferably, the gas transmission pipeline includes a seventh valve and a pressure controller; the seventh valve is used to control the circulation and isolation of the heat transfer gas in the gas transmission pipeline; the pressure controller is connected to the seventh valve and is used to monitor and control the pressure parameters of the input heat transfer gas.

[0015] Preferably, the exhaust pipeline includes an eighth valve and a vacuum pump; the eighth valve is used to control the circulation and isolation of the heat transfer gas in the exhaust pipeline; the vacuum pump is connected to the eighth valve and is used to exhaust the heat transfer gas in the gas pipeline.

[0016] Preferably, the reversing device is a reversing valve.

[0017] Preferably, the first to eighth valves are all diaphragm valves.

[0018] The second aspect of the present invention also provides a gas pipeline control method for wafer manufacturing, which is implemented using any of the above-mentioned gas pipeline systems and specifically includes the following steps: S1. By opening the first valve and closing the second valve, the heat transfer gas is connected to the exhaust pipeline in sequence through the needle valve, the flow meter and the first branch to measure the gas flow of the needle valve; S2. By opening the second valve and closing the first valve, the heat transfer gas is passed through the flow meter, the second branch and the heat transfer gas pipeline in sequence to measure the gas flow of the heat transfer gas pipeline; S3. By opening the second valve and the first valve, the residual heat transfer gas is discharged from the heat transfer gas pipeline to the exhaust pipeline; S4. The gas pipeline system is closed and the wafer is taken out.

[0019] Preferably, in S1, the flow rate adjustment range of the needle valve is 0 to 8 sccm.

[0020] Preferably, a fourth valve is provided between the needle valve and the flow meter, and the control pipeline further includes a fourth branch, which is connected in parallel with the fourth valve, the flow meter and the first valve; in the S2, a portion of the heat transfer gas is also provided to pass through the needle valve and then through the fourth branch into the exhaust pipeline.

[0021] Preferably, the second branch includes a flow measuring branch and a non-flow measuring branch, the flow measuring branch is connected to the gas pipeline through the flow meter, and the heat transfer gas pipeline includes a central heat transfer gas pipeline and an edge heat transfer gas pipeline; the central heat transfer gas pipeline and the edge heat transfer gas pipeline can be switchably connected to the flow measuring branch and the non-flow measuring branch through a reversing device; S2 also includes the following steps: during the process, the gas of the flow measuring branch is switched from the central heat transfer gas pipeline to the edge heat transfer gas pipeline, and the gas of the non-flow measuring branch is switched from the edge heat transfer gas pipeline to the central heat transfer gas pipeline through the reversing device, and the flow of the central heat transfer gas pipeline and the edge heat transfer gas pipeline are measured in turn by the flow meter.

[0022] In summary, compared with the prior art, the gas pipeline system and control method for wafer manufacturing provided by the present invention have at least the following advantages:

[0023] (1) The gas pipeline system of the present invention has a simple structural design. The same flow meter can be used to measure the gas flow of different pipelines by simply switching valves. This not only eliminates multi-sensor measurement deviations but also effectively reduces costs.

[0024] (2) When the gas pipeline system of the present invention uses a flow meter to measure the gas flow of the heat transfer gas pipeline, the needle valve is always kept open in one pipeline, which can stabilize the pressure of the system and prevent pressure fluctuations from affecting the flow measurement of the heat transfer gas pipeline;

[0025] (3) The control method described in the present invention can switch the gas in the non-flow measuring branch from the edge heat transfer gas pipeline to the center heat transfer gas pipeline through the reversing device, thereby measuring the gas flow rate flowing to the center and edge of the wafer respectively, thereby judging whether the adsorption effect of the wafer is uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the pipeline structure for measuring the gas flow rate of the needle valve in the first embodiment of the present invention;

[0027] Figure 2 Schematic diagram of the pipeline structure for measuring the gas flow rate of one path of the heat transfer gas pipeline in the first embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of the piping structure for discharging heat transfer gas in the first embodiment of the present invention;

[0029] Figure 4 Schematic diagram of the pipeline structure for measuring the gas flow rate of the needle valve in the second embodiment of the present invention;

[0030] Figure 5 Schematic diagram of the pipeline structure for measuring the gas flow rate of one channel of the central heat transfer gas pipeline in the second embodiment of the present invention;

[0031] Figure 6 Schematic diagram of the pipeline structure for measuring the gas flow rate of one side of the edge heat transfer gas pipeline in the second embodiment of the present invention;

[0032] Figure 7 Schematic diagram of the heat transfer gas exhaust pipeline structure in the second embodiment of the present invention.

[0033] Description of reference numerals:

[0034] 1-gas transmission pipeline, 2-exhaust pipeline, 3-heat transfer gas pipeline, 4-first branch, 5-second branch, 6-third branch, 7-fourth branch, 8-pressure sensor, 9-needle valve, 10-flow meter, 11-center heat transfer gas pipeline, 12-edge heat transfer gas pipeline, 13-flow measuring branch, 14-non-flow measuring branch, 15-reversing device, 16-vacuum pump, 17-electrostatic chuck, 18-wafer;

[0035] 101 - first end, 102 - second end, 103 - third end, 104 - fourth end, 105 - fifth end, 106 - sixth end, 107 - seventh end, 108 - eighth end, 109 - ninth end, 110 - tenth end;

[0036] 901 - first valve, 902 - second valve, 903 - third valve, 904 - fourth valve, 905 - fifth valve, 906 - sixth valve, 907 - seventh valve, 908 - eighth valve. DETAILED DESCRIPTION

[0037] The following is combined with Figure 1 ~Attached Figure 7 , the present invention is further explained by describing a preferred specific embodiment in detail.

[0038] It should be noted that the drawings are in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention. Therefore, they have no technical significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed in the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0039] It should be noted that, in the present invention, relational terms such as first and second, etc. are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only the elements explicitly listed, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0040] Existing gas pipeline systems used in wafer manufacturing generally use a back-helium system. Helium leak detection in back-helium systems is usually achieved using an indirect calculation method with dual flow meters. Specifically, based on the principle of conservation of mass: helium leakage = intake flow - exhaust flow, a high-precision flow meter is used to measure the gas flow in the intake and exhaust pipes respectively, and the difference is the helium leakage. However, this method's measurement accuracy is not accurate enough and is easily affected by environmental fluctuations, pipeline pressure loss, etc., making it impossible to accurately judge the adsorption effect of the wafer based on the helium leakage.

[0041] In order to solve the above problems, the present invention proposes a new gas pipeline system for wafer manufacturing. By switching valves, the same flow meter is reused to measure the gas flow in different pipelines, and the gas flow at the center and edge of the wafer is accurately measured respectively, so as to judge the adsorption effect of the wafer.

[0042] The technical solution of the gas pipeline system for wafer manufacturing of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0043] Example 1:

[0044] In the first embodiment of the present invention, Figures 1 to 3 As shown, a first aspect of the present invention provides a gas piping system for wafer manufacturing. The gas piping system is connected to a vacuum chamber via a vacuum-sealed interface and transfers heat to a wafer 18 held on the surface of an electrostatic chuck 17 within the vacuum chamber. The gas piping system comprises a gas supply line 1, a control line, an exhaust line 2, and a heat transfer gas line 3. The control line is connected to the gas supply line 1 and is used to control the flow of heat transfer gas to either the exhaust line 2 or the heat transfer gas line 3.

[0045] The control pipeline includes a first branch 4 and a second branch 5 that are connected.

[0046] Further, such as Figure 1 As shown, the first end 101 of the first branch 4 is connected to the gas pipeline 1 through the flow meter 10 and the needle valve 9 in sequence, and the second end 102 is connected to the exhaust pipeline 2 through the first valve 901; specifically, by opening the first valve 901 and closing the second valve 902, the heat transfer gas flows through the gas pipeline 1, the needle valve 9, the flow meter 10, the first valve 901 and the exhaust pipeline 2 in sequence. At this time, the flow measured by the flow meter 10 is the gas flow rate flowing through the needle valve 9.

[0047] Furthermore, the third end 103 of the second branch 5 is connected to the gas pipeline 1 through the flowmeter 10, and the fourth end 104 is connected to the heat transfer gas pipeline 3 through the second valve 902; specifically, by opening the second valve 902 and closing the first valve 901, the heat transfer gas flows through the gas pipeline 1, the flowmeter 10, the second valve 902 and the heat transfer gas pipeline 3 in sequence, and finally enters the vacuum chamber to transfer heat to the wafer 18 adsorbed on the surface of the electrostatic chuck 17, and the flow rate measured by the flowmeter 10 at this time is the gas flow rate flowing through the heat transfer gas pipeline 3.

[0048] It should be noted that measuring the gas flow rate along the needle valve 9 can achieve high-precision flow control and determine whether the adsorption effect of the wafer is uniform; by adjusting the opening of the needle valve 9 and recording the value of the flow meter 10, an accurate correspondence between the flow meter measurement value and the actual flow rate can be established; at the same time, if there is a local adsorption failure between the wafer 18 and the electrostatic chuck 17 in the vacuum chamber, it will cause abnormal leakage of the heat transfer gas through the adsorption gap, and then cause the gas flow rate of the heat transfer gas pipeline 3 to fluctuate. Therefore, by comparing the difference between the gas flow rate along the needle valve 9 and the real-time gas flow rate of the heat transfer gas pipeline 3, the integrity of the wafer adsorption state can be inferred.

[0049] Furthermore, in this embodiment, the same flow meter 10 is reused when measuring the gas flow of the needle valve 9 and the gas flow of the heat transfer gas pipeline 3, which not only eliminates the detection error of the sensor equipment itself, but also simplifies the design and reduces costs.

[0050] Furthermore, a fourth valve 904 is provided between the needle valve 9 and the flow meter 10 , a third branch 6 is provided in parallel on the needle valve 9 and the fourth valve 904 , and a fifth valve 905 is provided on the third branch 6 .

[0051] It should be noted that the second branch 5 is connected to the gas pipeline 1 through the third branch 6; specifically, by opening the second valve 902 and the fifth valve 905, and closing the first valve 901 and the fourth valve 904, the heat transfer gas flows through the gas pipeline 1, the third branch 6, the flow meter 10, the second branch 5, the second valve 2 and the heat transfer gas pipeline 3 in sequence, and finally enters the vacuum chamber to transfer heat to the wafer 18 adsorbed on the surface of the electrostatic chuck 17.

[0052] Furthermore, the control pipeline also includes a fourth branch 7, on which a sixth valve 906 is provided, and the fourth branch 7 is connected in parallel with the fourth valve 904, the flow meter 10 and the first valve 901, and its ninth end 109 is connected to the gas supply pipeline 1 through the needle valve 9, and the tenth end 110 is directly connected to the exhaust pipeline 2.

[0053] It is worth noting that Figure 2 As shown, when the flow meter 10 is used to measure the gas flow flowing through the heat transfer gas pipeline 3, the sixth valve 906 remains in the open state, that is, the fourth branch 7 always remains in the conductive state; at this time, a part of the heat transfer gas flows from the gas pipeline 1 through the third branch 6, the flow meter 10, the second branch 5, the second valve 902 and the heat transfer gas pipeline 3 in sequence, and finally enters the vacuum chamber to transfer heat to the wafer 18 adsorbed on the surface of the electrostatic chuck 17; the other part of the heat transfer gas flows from the gas pipeline 1 through the needle valve 9 and the fourth branch 7 in sequence, and is finally diverted to the exhaust pipeline 2.

[0054] The reason for adopting the above design is that the gas flow rate of the heat transfer gas pipeline 3 will change instantaneously due to factors such as the wafer adsorption state. If only a single pipeline (i.e., the heat transfer gas pipeline 3) is relied upon for gas supply, the sudden change in gas pressure will cause a large fluctuation error in the measurement value of the flowmeter 10. At this time, if the fourth branch 7 is kept open, the needle valve 9 can be used as a dynamic pressure relief channel to divert excess gas to the exhaust pipeline 2, so that the inlet pressure of the gas pipeline 1 is stabilized within the set threshold, thereby ensuring the accuracy, linearity and repeatability of the measurement results of the flowmeter 10.

[0055] Furthermore, the gas supply line 1 includes a seventh valve 907 and a pressure controller 8; the seventh valve 907 is used to control the flow and isolation of the heat transfer gas in the gas supply line 1; the pressure controller 8 is connected to the seventh valve 907 and is used to monitor and control the pressure parameters of the input heat transfer gas. It is understood that in the present invention, when the heat transfer gas is transmitted to the vacuum chamber and heat is transferred to the wafer 18, the pressure controller 8 is used to ensure pressure stability, while the needle valve 9 further refines the flow rate regulation. This is suitable for scenarios where the gas pipeline system is sensitive to pressure and the flow rate needs to be precisely controlled, and can effectively improve system stability.

[0056] Furthermore, the exhaust pipeline 2 includes an eighth valve 908 and a vacuum pump 16. The eighth valve 908 is used to control the circulation and isolation of the heat transfer gas in the exhaust pipeline 2; the vacuum pump 16 is connected to the eighth valve 908 and is used to exhaust the heat transfer gas in the gas pipeline 2.

[0057] In the first embodiment of the present invention, a second aspect of the present invention provides a gas pipeline control method for wafer manufacturing, which is implemented using the above-mentioned gas pipeline system. The same flow meter can be reused to measure the gas flow of different pipelines simply by switching valves. The method specifically includes the following steps:

[0058] S1. Open the first valve 901 and close the second valve 902 to connect the heat transfer gas to the exhaust pipe 2 through the needle valve 9, the flow meter 10 and the first branch 4 in sequence to measure the gas flow along the needle valve 9.

[0059] Specifically, if Figure 1 As shown, in this example, by opening the first valve 901, the fourth valve 904, the seventh valve 907 and the eighth valve 908, and closing the remaining valves, the heat transfer gas is connected to the exhaust pipe 2 through the gas pipeline 1, the needle valve 9, the flow meter 10 and the first branch 4 in sequence, and the flow meter 10 measures the gas flow along the needle valve 9.

[0060] Furthermore, in the above-mentioned S1, the flow rate adjustment range of the needle valve 9 is 0 to 8 sccm.

[0061] S2. Open the second valve 902 and close the first valve 901 to allow the heat transfer gas to pass through the flow meter 10, the second branch 5 and the heat transfer gas pipeline 3 in sequence to measure the gas flow in the heat transfer gas pipeline 3.

[0062] Specifically, if Figure 2 As shown, in this example, by closing the first valve 901 and the fourth valve 904 and opening the remaining valves, the heat transfer gas passes through the gas pipeline 1, the third branch 6, the flow meter 10, the second branch 5 and the heat transfer gas pipeline 3 in sequence, and finally enters the vacuum chamber, so that the flow meter 10 measures the gas flow of the heat transfer gas pipeline 3.

[0063] Furthermore, in the above-mentioned S2, a portion of the heat transfer gas is provided to flow into the exhaust pipe 2 in sequence through the gas transmission pipe 1, the needle valve 9 and the fourth branch 7, so as to play a role in stabilizing the pressure.

[0064] S3 . Open the second valve 902 and the first valve 901 to discharge the residual heat transfer gas from the heat transfer gas pipeline 3 to the exhaust pipeline 1 .

[0065] Specifically, such as Figure 3 As shown, in this example, by opening the first valve 901, the second valve 902 and the eighth valve 908 and closing the remaining valves, the heat transfer gas remaining in the vacuum chamber is discharged to the exhaust pipe 2 through the heat transfer gas pipeline 1, the second branch 5 and the first valve 901 in sequence.

[0066] S4 , after the residual heat transfer gas in S3 is exhausted, the gas pipeline system is closed and the wafer 18 is taken out.

[0067] Example 2:

[0068] In the second embodiment of the present invention, Figures 4 to 7 As shown, the difference from the first embodiment of the present invention is that the second branch 5 in the gas pipeline system includes a flow measuring branch 13 and a non-flow measuring branch 14, and the heat transfer gas pipeline 3 includes a central heat transfer gas pipeline 11 and an edge heat transfer gas pipeline 12.

[0069] Furthermore, the central heat transfer gas pipeline 11 and the edge heat transfer gas pipeline 12 are respectively switchably connected to the fifth end 105 of the flow measuring branch 13 and the seventh end 107 of the non-flow measuring branch 14 through the reversing device 15; the sixth end 106 of the flow measuring branch 13 is connected to the gas transmission pipeline 1 through the flow meter 10, and the eighth end 108 of the non-flow measuring branch 14 is directly connected to the gas transmission pipeline 1.

[0070] Specifically, the central heat transfer gas pipeline 11 leads to the center of the wafer 18, and the edge heat transfer gas pipeline 12 leads to the edge of the wafer 18; when it is necessary to measure the gas flow of the central heat transfer gas pipeline 11, as shown in FIG. Figure 5 As shown, the central pipeline 11 is connected to the fifth end 105 of the flow measuring branch 13, and the sixth end 106 of the flow measuring branch 13 is connected to the flow meter 10. At this time, the heat transfer gas passes through the gas transmission pipeline 1, the third branch 6, the flow meter 10, the flow measuring branch 13 and the central heat transfer gas pipeline 11 in sequence, and finally enters the vacuum chamber, so that the flow meter 10 measures the gas flow of the central heat transfer gas pipeline 11; when it is necessary to measure the gas flow of the edge heat transfer gas pipeline 12, as shown Figure 6 As shown, the flow measuring branch 13 and the non-flow measuring branch 14 are switched by the reversing device 15, and the edge heat transfer gas pipeline 12 and the sixth end 106 of the flow measuring branch 13 are connected to the flow meter 10. At this time, the heat transfer gas passes through the gas transmission pipeline 1, the third branch 6, the flow meter 10, the flow measuring branch 13 and the edge heat transfer gas pipeline 12 in sequence, and finally enters the vacuum chamber, so that the flow meter 10 measures the gas flow of the edge heat transfer gas pipeline 12.

[0071] It can be understood that after measuring the gas flow of the central heat transfer gas pipeline 11 and the gas flow of the edge heat transfer gas pipeline 12 respectively, the two measurement values ​​can be compared. If the error thresholds of the two are within the allowable range, it means that the center and edge parts of the wafer 18 have a uniform adsorption effect.

[0072] Furthermore, a second valve 902 is provided between the reversing device 15 and the central heat transfer gas pipeline 11 , and a third valve 903 is provided between the reversing device 15 and the edge heat transfer gas pipeline 12 .

[0073] In a second embodiment of the present invention, a gas pipeline control method is also implemented using the above-mentioned gas pipeline system. This method differs from the method provided in the first embodiment in that: S2 further includes the following steps: during the process, the gas of the flow measuring branch 13 is switched from the central heat transfer gas pipeline 11 to the edge heat transfer gas pipeline 12 through the reversing device 15, and the gas of the non-flow measuring branch 14 is switched from the edge heat transfer gas pipeline 12 to the central heat transfer gas pipeline 11, and the flow rates of the central heat transfer gas pipeline 11 and the edge heat transfer gas pipeline 12 are measured in turn by the flow meter 10.

[0074] It should be noted that, in a preferred embodiment of the present invention, the reversing device is a reversing valve, and the first valve to the eighth valve are all diaphragm valves.

[0075] In summary, the present invention provides a gas pipeline system for wafer manufacturing, which has a simple structural design. It measures the gas flow of different pipelines by reusing the same flow meter only by switching valves. This can not only eliminate the measurement deviation of multiple sensors, but also effectively reduce costs. At the same time, when the flow meter is used to measure the gas flow of the heat transfer gas pipeline, the needle valve is always kept open in one pipeline, which can stabilize the pressure of the system and prevent pressure fluctuations from affecting the flow measurement of the heat transfer gas pipeline. The present invention also provides a gas pipeline control method for wafer manufacturing. The method can switch the gas of the non-flow measurement branch from the edge heat transfer gas pipeline to the center heat transfer gas pipeline through a reversing device, thereby measuring the gas flow flowing to the center and edge of the wafer respectively, thereby judging whether the adsorption effect of the wafer is uniform, which has great practical value.

[0076] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas pipeline system for wafer manufacturing, characterized in that: include: Gas transmission pipelines, control pipelines, exhaust pipelines and heat transfer gas pipelines; The control pipeline is connected to the gas pipeline and is used to control the heat transfer gas to flow to the exhaust pipeline or the heat transfer gas pipeline; The control pipeline includes a first branch and a second branch connected; The first end of the first branch is connected to the gas pipeline through a flow meter and a needle valve in sequence, and the second end is connected to the exhaust pipeline through a first valve; the third end of the second branch is connected to the gas pipeline through the flow meter, and the fourth end is connected to the heat transfer gas pipeline through a second valve; By opening the first valve and closing the second valve, a flow meter is used to measure the gas flow rate of the needle valve; By opening the second valve and closing the first valve, the same flow meter is used to measure the gas flow in the heat transfer gas pipeline.

2. The gas pipeline system for wafer manufacturing according to claim 1, wherein: The second branch includes a flow measurement branch and a non-flow measurement branch, and the heat transfer gas pipeline includes a central heat transfer gas pipeline and an edge heat transfer gas pipeline; The central heat transfer gas pipeline and the edge heat transfer gas pipeline are switchably connected to the fifth end of the flow measuring branch and the seventh end of the non-flow measuring branch through a reversing device; The sixth end of the flow measuring branch is connected to the gas transmission pipeline through the flow meter, and the eighth end of the non-flow measuring branch is connected to the gas transmission pipeline.

3. The gas pipeline system for wafer manufacturing according to claim 2, wherein: The second valve is further provided between the reversing device and the central heat transfer gas pipeline, and the third valve is further provided between the reversing device and the edge heat transfer gas pipeline.

4. The gas pipeline system for wafer manufacturing according to claim 2, wherein: A fourth valve is provided between the needle valve and the flow meter, a third branch is connected in parallel to the needle valve and the fourth valve, and the second branch is connected to the gas pipeline through the third branch.

5. The gas pipeline system for wafer manufacturing according to claim 4, wherein: The third branch is provided with a fifth valve.

6. The gas pipeline system for wafer manufacturing according to claim 4, wherein: The control pipeline also includes a fourth branch, which is connected in parallel with the fourth valve, the flow meter and the first valve. The ninth end of the fourth branch is connected to the gas supply pipeline through the needle valve, and the tenth end is connected to the exhaust pipeline.

7. The gas pipeline system for wafer manufacturing according to claim 6, wherein: The fourth branch is provided with a sixth valve.

8. The gas pipeline system for wafer manufacturing according to claim 1, wherein: The gas transmission pipeline includes a seventh valve and a pressure controller; The seventh valve is used to control the flow and isolation of the heat transfer gas in the gas pipeline; The pressure controller is connected to the seventh valve and is used to monitor and control the pressure parameters of the input heat transfer gas.

9. The gas pipeline system for wafer manufacturing according to claim 8, wherein: The exhaust pipeline includes an eighth valve and a vacuum pump; The eighth valve is used to control the flow and isolation of heat transfer gas in the exhaust pipeline; The vacuum pump is connected to the eighth valve and is used to discharge the heat transfer gas in the gas pipeline.

10. The gas pipeline system for wafer manufacturing according to claim 3, wherein: The reversing device is a reversing valve.

11. The gas pipeline system for wafer manufacturing according to claim 10, wherein: The first to eighth valves are all diaphragm valves.

12. A gas pipeline control method for wafer manufacturing, implemented using the gas pipeline system according to any one of claims 1 to 11, characterized in that: The specific steps include: S1. Open the first valve and close the second valve to allow the heat transfer gas to pass through the needle valve, the flow meter, and the first branch to the exhaust pipe in sequence, so as to measure the gas flow rate of the needle valve. S2. Open the second valve and close the first valve to allow the heat transfer gas to pass through the flow meter, the second branch, and the heat transfer gas pipeline in sequence to measure the gas flow rate in the heat transfer gas pipeline; S3. Open the second valve and the first valve to discharge the residual heat transfer gas from the heat transfer gas pipeline to the exhaust pipeline.

13. The gas pipeline control method for wafer manufacturing according to claim 12, wherein: In the above-mentioned S1, the flow rate adjustment range of the needle valve is 0 to 8 sccm.

14. The gas pipeline control method for wafer manufacturing according to claim 12, wherein: A fourth valve is provided between the needle valve and the flow meter, and the control pipeline further comprises a fourth branch, wherein the fourth branch is connected in parallel with the fourth valve, the flow meter and the first valve; In the above-mentioned S2, a portion of the heat transfer gas is further provided to flow through the needle valve and then through a fourth branch into the exhaust pipe.

15. The gas pipeline control method for wafer manufacturing according to claim 12, wherein: The second branch includes a flow measuring branch and a non-flow measuring branch, the flow measuring branch is connected to the gas transmission pipeline through the flow meter, and the heat transfer gas pipeline includes a central heat transfer gas pipeline and an edge heat transfer gas pipeline; The central heat transfer gas pipeline and the edge heat transfer gas pipeline are switchably connected to the flow measuring branch and the non-flow measuring branch through a reversing device; The S2 further includes the following steps: during the process, the gas in the flow measuring branch is switched from the central heat transfer gas pipeline to the edge heat transfer gas pipeline by the reversing device, and the gas in the non-flow measuring branch is switched from the edge heat transfer gas pipeline to the central heat transfer gas pipeline, and the flow rates of the central heat transfer gas pipeline and the edge heat transfer gas pipeline are measured in sequence by the flow meter.

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