Preparation method of heterostructure based on magnetron sputtering technology

Abstract

The invention belongs to the technical field of magnetron sputtering, and particularly relates to a preparation method of a heterostructure based on a magnetron sputtering technology, which comprises the following steps: selecting a viscous substrate, and preparing Fe3GeTe2 to be prepared into a thin layer Fe3GeTe2 with a preset thickness by using a preset method; the method comprises the following steps: obtaining a SiO2 substrate, and attaching a thin layer Fe3GeTe2 to the SiO2 substrate; a NiO target material is used for carrying out magnetron sputtering on a thin layer Fe3GeTe2 to obtain a NiO / Fe3GeTe2 thin film heterojunction, the NiO / Fe3GeTe2 heterojunction is successfully prepared, a magneto-optical Kerr measurement system is used for enhancing the magneto-optical characteristics of a two-dimensional ferromagnet Fe3GeTe2, a Fe3GeTe2 thin film is prepared and transferred to a SiO2 substrate, then NiO is deposited on the Fe3GeTe2 thin film through magnetron sputtering to form the NiO / Fe3GeTe2 heterojunction, and the NiO / Fe3GeTe2 heterojunction is obtained. Magneto-optical Kerr measurement is carried out on the NiO / Fe3GeTe2 heterojunction, and the potential application prospect of the antiferromagnetic / ferromagnetic neighbor coupling effect in the aspect of regulating and controlling the magnetism and magneto-optical characteristics of Fe3GeTe2 is disclosed.

Description

Technical Field

[0001] The present application belongs to the field of magnetron sputtering technology, and in particular relates to a method for preparing a heterostructure based on magnetron sputtering technology. Background Art

[0002] Magnetism in layered van der Waals materials has attracted considerable attention due to the unique magnetic properties arising from their two-dimensional nature. Such layered van der Waals materials offer an opportunity to fabricate heterostructures free from the limitations of traditional thin film growth and provide a unique avenue for exploring new functionalities of these materials based on electric fields and crystal symmetries.

[0003] However, practical industrial applications pose challenges to the Curie temperature and magnetic strength of two-dimensional ferromagnets. The limited properties of individual two-dimensional magnetic materials limit their application in devices. The rational construction of two-dimensional magnetic heterojunctions can lead to the generation of multiple magnetic interface effects, thereby obtaining richer and better magnetic properties and enabling the application of spintronics devices. Therefore, how to construct high-performance two-dimensional magnetic heterojunctions and how to effectively control them is one of the current difficulties in the field of spintronics research. Summary of the Invention

[0004] This application aims to at least partially address the technical challenges of constructing high-performance two-dimensional magnetic heterojunctions and effectively controlling them. To this end, this application provides a method for fabricating heterostructures based on magnetron sputtering technology.

[0005] The object of the present invention is achieved through the following technical solutions:

[0006] In a first aspect, an embodiment of the present application provides a method for preparing a heterostructure, comprising:

[0007] Selecting an adhesive substrate, and using a preset method to prepare the Fe3GeTe2 to be prepared into a thin layer of Fe3GeTe2 with a preset thickness;

[0008] Obtain a SiO2 substrate and attach a thin layer of Fe3GeTe2 onto the SiO2 substrate;

[0009] The thin layer of Fe3GeTe2 was magnetron sputtered using NiO target to obtain NiO / Fe3GeTe2 thin film heterojunction.

[0010] In some embodiments, the Fe3GeTe2 to be prepared is prepared into a thin layer of Fe3GeTe2 with a preset thickness using a preset method, including:

[0011] performing surface treatment on the substrate;

[0012] The Fe3GeTe2 to be prepared is evenly distributed on a substrate in a closed environment to obtain a base material;

[0013] Apply a layer of tape on the surface of the base material so that it adheres tightly to the material;

[0014] Peel off the tape to separate a layer from the surface of the material;

[0015] Repeat the previous step until a thin layer of Fe3GeTe2 with a preset thickness is obtained.

[0016] In some embodiments, the predetermined thickness is 25 nm.

[0017] In some embodiments, attaching a thin layer of Fe3GeTe2 to a SiO2 substrate comprises:

[0018] Plasma cleaning of SiO2 substrate;

[0019] The Fe3GeTe2 thin film was transferred onto the SiO2 substrate using a fixed-point transfer platform in a glove box.

[0020] In some embodiments, magnetron sputtering of a thin layer of Fe3GeTe2 using a NiO target includes:

[0021] Adjust the preset parameters of the magnetron sputtering coater;

[0022] Place the NiO target on the target base and place the SiO2 substrate with a thin layer of Fe3GeTe2;

[0023] Construct a magnetron sputtering environment and perform magnetron sputtering on thin layers of Fe3GeTe2;

[0024] The magnetron sputtering was completed after a clear glow was observed.

[0025] In some embodiments, establishing a magnetron sputtering environment includes:

[0026] Deflate the sample chamber to destroy the vacuum environment;

[0027] After placing the SiO2 substrate with a thin layer of Fe3GeTe2,

[0028] After the sample chamber is evacuated to a preset pressure, argon gas is filled in to form a magnetron sputtering environment.

[0029] In some embodiments, placing the NiO target on a target support further comprises:

[0030] Place the NiO target on the target base and cover it with the housing, leaving a 2-3mm gap between the housing and the NiO target.

[0031] Check the resistance between the target and the housing. If no short circuit occurs, proceed to the next step.

[0032] In some embodiments, magnetron sputtering of a thin layer of Fe3GeTe2 using a NiO target further comprises:

[0033] Before magnetron sputtering, the thin layer of Fe3GeTe2 was pre-sputtered to clean the surface.

[0034] The beneficial effects of the present invention are:

[0035] Through the heterostructure preparation method based on magnetron sputtering technology provided in this application, the NiO / Fe3GeTe2 heterojunction was successfully prepared, and the magneto-optical properties of the two-dimensional ferromagnet Fe3GeTe2 were enhanced by using a magneto-optical Kerr measurement system. By preparing a Fe3GeTe2 film and transferring it to a SiO2 substrate, NiO was deposited on the Fe3GeTe2 film by magnetron sputtering to form a NiO / Fe3GeTe2 heterojunction. The magneto-optical Kerr measurement of the NiO / Fe3GeTe2 heterojunction revealed the role of the antiferromagnetic / ferromagnetic proximity coupling effect in regulating the magnetic and magneto-optical properties of Fe3GeTe2. In addition, the magneto-optical enhancement properties of Fe3GeTe2 heterojunction can also be used to manufacture magneto-optical storage devices. By adding a local magnetic field to the Fe3GeTe2 heterojunction, the magneto-optical response of the local area can be controlled. This magneto-optical storage device has the advantages of high-speed reading and writing, low power consumption and high density. Therefore, it has broad application prospects in the fields of information storage and communication. In general, the magneto-optical enhancement properties of Fe3GeTe2 heterojunction are one of the important characteristics of its application in optoelectronic devices and magneto-optical storage devices, and are of great significance for the development of the next generation of high-speed, high-density optoelectronic devices and storage technologies. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 The method for preparing the heterostructure provided in this application is shown;

[0037] Figure 2 The method for preparing a thin layer of Fe3GeTe2 of a predetermined thickness provided in this application is shown;

[0038] Figure 3 The method provided in this application for attaching a thin layer of Fe3GeTe2 to a SiO2 substrate is shown;

[0039] Figure 4 The method for constructing a magnetron sputtering environment provided in this application is shown;

[0040] Figure 5 a shows an optical microscope image of a Fe3GeTe2 thin film;

[0041] Figure 5 b shows an optical microscope image of NiO / Fe3GeTe2 heterojunction;

[0042] Figure 6 a shows the magneto-optical Kerr MOKE signal of Fe3GeTe2 film;

[0043] Figure 6 b shows the magneto-optical Kerr-MOKE signal of the NiO / Fe3GeTe2 heterojunction. DETAILED DESCRIPTION

[0044] It should be noted that all directional indications in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between various components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0045] In the present invention, unless otherwise specified or limited, the terms "connection" and "fixation" should be understood in a broad sense. For example, "fixation" can mean fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will be able to understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0046] In addition, in the present invention, descriptions such as "first" and "second" are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0047] The present application is described below with reference to specific embodiments and with reference to the accompanying drawings:

[0048] Magnetism in layered van der Waals materials has attracted much attention due to the unique magnetic properties arising from their two-dimensional nature. Such layered van der Waals materials provide an opportunity to fabricate heterostructures that are not limited by traditional thin film growth and offer a unique path to explore new functionalities of these materials based on electric fields and crystal symmetries.

[0049] One of the main challenges of van der Waals ferromagnets is their relatively low ferromagnetic transition temperature (Curie temperature). CrI3 and Cr2Ge2Te6 were reported as atomically thin ferromagnets in 2017, with Curie temperatures ranging from 30K (bilayer Cr2Ge2Te6) to 45K (monolayer CrI3), which is intriguingly low compared to bulk values ​​of 61K (bulk CrI3) and 66K (bulk Cr2Ge2Te6). To increase the Curie temperature, various approaches using interface and gap engineering have been proposed, including dielectric effects, spin-orbit coupling, charge transfer, and interfacial hybridization. However, to date, only a few methods, such as electric field control, have been implemented and reported. Therefore, it is important to find other effective methods to enhance the Curie temperature.

[0050] Fe3GeTe2 is a novel two-dimensional van der Waals layered ferromagnetic material that has attracted considerable attention in recent years for its unique magnetic and electrical properties and potential applications in spintronics. It is composed of alternating layers of Fe-Ge and Te, bonded by weak van der Waals forces, allowing for easy exfoliation into single or few-layer structures. The Curie temperature of the bulk material is approximately 220 K, dropping to 130 K for single layers. However, this temperature can be significantly increased to near room temperature through manipulation (e.g., through ion intercalation, stress, or heterostructure design). However, practical industrial applications pose challenges in determining the Curie temperature and magnetic strength of two-dimensional ferromagnets. The limited properties of individual two-dimensional magnetic materials limit their device applications. The rational construction of two-dimensional magnetic heterojunctions can lead to the generation of diverse magnetic interface effects, resulting in richer and superior magnetic properties, enabling applications in spintronics devices. Therefore, the construction of high-performance two-dimensional magnetic heterojunctions and their effective manipulation are currently key research areas in spintronics.

[0051] This application aims to at least to some extent solve the difficult technical problems of constructing high-performance two-dimensional magnetic heterojunctions and how to effectively control two-dimensional heterojunctions. To this end, this application provides a method for preparing heterostructures based on magnetron sputtering technology, referring to Figure 1 ,include:

[0052] S1, selecting an adhesive substrate and using a preset method to prepare the Fe3GeTe2 to be prepared into a thin layer of Fe3GeTe2 with a preset thickness;

[0053] A substrate with strong adhesion is selected, such as silicon wafer, graphite, glass, etc.; but since Fe3GeTe2 is very easy to oxidize in the air, the entire process is carried out in a glove box filled with nitrogen, and the Fe3GeTe2 film is prepared by mechanical stripping in the glove box.

[0054] S2, obtain SiO2 substrate, and attach a thin layer of Fe3GeTe2 to the SiO2 substrate; in this embodiment, the thickness of SiO2 is 300nm, refer to Figure 5 a is an optical microscope image of a single Fe3GeTe2 thin film on a SiO2 substrate.

[0055] S3, using NiO target material to magnetron sputter the thin layer of Fe3GeTe2 to obtain NiO / Fe3GeTe2 thin film heterojunction. In this embodiment, the deposition thickness of NiO is about 15nm, referring to Figure 5 b is an optical microscope image of the NiO / Fe3GeTe2 heterojunction after depositing NiO with a thickness of about 15 nm.

[0056] NiO is a material with antiferromagnetic properties. In antiferromagnetic materials, adjacent spins are arranged in reverse, which causes the magnetism of the material to disappear because the total spin vector of the entire material is zero. Due to its special electronic structure and magnetic properties, it has a wide range of applications. The NiO crystal structure is a rock salt structure, in which Ni2+ ions occupy the octahedral vacancies of the square lattice, and each Ni2+ ion is surrounded by six oxygen ions to form an octahedral coordination. In antiferromagnetic NiO, the spins of adjacent Ni2+ ions are arranged in reverse, which causes the total spin of the entire material to be zero, so it is not magnetic. This special magnetic property makes NiO materials widely used in magnetism, optics, electricity and other fields, and therefore NiO is used as a target material for magnetron sputtering in this application.

[0057] By successfully preparing the NiO / Fe3GeTe2 heterojunction, the magneto-optical properties of the two-dimensional ferromagnet Fe3GeTe2 were enhanced using a magneto-optical Kerr measurement system. By preparing a Fe3GeTe2 film and transferring it to a SiO2 substrate, NiO was deposited on the Fe3GeTe2 film by magnetron sputtering to form a NiO / Fe3GeTe2 heterojunction. Magneto-optical Kerr measurement of the NiO / Fe3GeTe2 heterojunction revealed the potential application prospects of the antiferromagnetic / ferromagnetic proximity coupling effect in regulating the magnetic and magneto-optical properties of Fe3GeTe2. In addition, the magneto-optical enhancement properties of the Fe3GeTe2 heterojunction can also be used to manufacture magneto-optical storage devices. By adding a local magnetic field to the Fe3GeTe2 heterojunction, the magneto-optical response of the local area can be controlled. This magneto-optical storage device has the advantages of high-speed reading and writing, low power consumption and high density, and therefore has broad application prospects in the fields of information storage and communications. In general, the magneto-optical enhancement properties of the Fe3GeTe2 heterojunction are one of the important characteristics of its application in optoelectronic devices and magneto-optical storage devices, and are of great significance for the development of the next generation of high-speed, high-density optoelectronic devices and storage technologies.

[0058] In some embodiments, the Fe3GeTe2 to be prepared is prepared into a thin layer of Fe3GeTe2 with a preset thickness using a preset method, referring to Figure 2 ,include:

[0059] S11, performing surface treatment on the substrate;

[0060] The substrate is subjected to surface treatment, such as cleaning, polishing, annealing, etc., so that the material can better adhere to the substrate.

[0061] S12, uniformly distributing the Fe3GeTe2 to be prepared on a substrate in a closed environment to obtain a base material;

[0062] Place the Fe3GeTe2 to be prepared on a substrate. For some powdered materials, they can be spread on the substrate first, and then evenly distributed by vibration or centrifugation.

[0063] S13, applying a layer of tape to the surface of the base material so that it adheres tightly to the material;

[0064] Specifically, mechanical exfoliation is a method that uses friction and interaction between an object and a material to peel off and thin the material layer by layer. This method is one of the fastest and simplest ways to prepare two-dimensional materials. Since scientists used tape to cleave a single layer of graphene, it has been widely used to prepare various two-dimensional materials. The basic principle of mechanical exfoliation is to place the desired material on a highly sticky substrate, then apply tape or other sticky substances to the surface of the material, and then quickly peel off the tape. This will separate a layer of the material surface. Repeat this process to peel off the material layer by layer until the desired thickness is obtained.

[0065] S14, peeling off the tape to separate a layer from the surface of the material;

[0066] Peel off the tape quickly and evenly to separate the surface layer of the material. If the material is fragile, you can use a slow and gentle movement of the tape when peeling it off.

[0067] S15, repeat the previous step until a thin layer of Fe3GeTe2 with a preset thickness is obtained.

[0068] It's important to note that mechanical exfoliation is difficult to control the thickness of two-dimensional materials, often requiring microscopes and other tools to observe the thickness. Furthermore, the exfoliation process is prone to impurities and damage, requiring strict control and treatment.

[0069] In some embodiments, the preset thickness is 20 nm-30 nm. Specifically, in this embodiment, the thickness of the thin layer of Fe 3 GeTe 2 can be 25 nm, which is convenient for detection.

[0070] In some embodiments, attaching a thin layer of Fe3GeTe2 to a SiO2 substrate comprises:

[0071] S21, plasma cleaning the SiO2 substrate; the SiO2 substrate is cleaned using a plasma cleaning machine, thereby improving the quality of the Fe3GeTe2 thin film obtained subsequently.

[0072] S22, in a glove box, the Fe3GeTe2 thin film is transferred onto a SiO2 substrate via a fixed-point transfer platform.

[0073] Stick a small amount of low-temperature tape on the back of the substrate and place it on the sample stage in the sputtering chamber. Use tweezers to gently press the four corners of the SiO2 substrate to make it firmly stick to the sample stage to ensure that it will not fall off as the rotating stage rotates during the sputtering process.

[0074] In some embodiments, a thin layer of Fe3GeTe2 is magnetron sputtered using a NiO target, as shown in FIG. Figure 3 ,include:

[0075] S31, adjusting the preset parameters of the magnetron sputtering coating instrument;

[0076] Magnetron sputtering is a physical vapor deposition technology used for thin film formation and surface coating. Based on the principle of magnetron emission, it uses a high-energy ion beam to bombard a target surface, causing the target material to detach and deposit on the substrate, forming a thin film. In a magnetron sputtering system, a target and a substrate are placed within a vacuum chamber, with the target positioned on the chamber's anode. A magnetic field is positioned behind the target, deflecting the electron beam away from the target surface. As the target surface is bombarded, it releases a large number of ions and neutral particles, which float in the vacuum and deposit on the substrate surface, forming a thin film. The ion bombardment of the target in magnetron sputtering provides the energy required for thin film formation and results in dense, uniform, and highly crystalline films. Furthermore, by controlling parameters such as gas pressure, gas type, magnetic field, and target temperature, the film morphology, structure, and properties can be manipulated to achieve the desired film properties.

[0077] Turn on the main power plug of the air pump connected to the magnetron sputtering coater, push the button upward, then turn on the white air switch and molecular pump switch on the back of the instrument, adjust the interface, and set the speed of the molecular pump to 309 (820Hz).

[0078] S32, placing a NiO target on a target base, and placing a SiO2 substrate with a thin layer of Fe3GeTe2;

[0079] In some embodiments, placing the NiO target on a target support further comprises:

[0080] S321, place the NiO target on the target base and cover it with the housing, leaving a gap of 2-3 mm between the housing and the NiO target;

[0081] S322, detecting the resistance between the target material and the housing, and continuing with subsequent steps if no short circuit occurs.

[0082] Place the NiO target on the target base and screw the upper shell back, leaving a 2-3mm gap between it and the NiO target. Then use a multimeter to detect the resistance between the target and the shell to prevent short circuit, otherwise subsequent sputtering will not be able to start.

[0083] S33, constructing a magnetron sputtering environment and performing magnetron sputtering on a thin layer of Fe3GeTe2;

[0084] In some embodiments, a magnetron sputtering environment is constructed, referring to Figure 4 ,include:

[0085] S331, degassing the sample cavity to destroy the vacuum environment;

[0086] Open the instrument operation interface, enter the operating system, click on the sample chamber to run the deflation, break the vacuum until the pressure in the chamber is 3.2 10-5 Pa, open the hatch.

[0087] S332, placing a SiO2 substrate with a thin layer of Fe3GeTe2;

[0088] S333, after the sample chamber is evacuated to a preset pressure, argon gas is filled into the chamber to form a magnetron sputtering environment.

[0089] When the pressure in the cavity is about 1.5 Stop vacuuming when the pressure reaches 10-4 Pa, set the argon flow rate to 60 sccm, open the argon bottle valve, fill the entire cavity with argon atmosphere, then interrupt the introduction of argon and wait for about 2 minutes before introducing argon again. Repeat 2-3 times.

[0090] In some embodiments, magnetron sputtering of a thin layer of Fe3GeTe2 using a NiO target further comprises:

[0091] S341, before magnetron sputtering, pre-sputter the thin layer of Fe3GeTe2 to clean the surface.

[0092] The RF power was set to 150W and the pre-sputtering time was set to 5 minutes to bombard any oxide or ash impurities on the NiO target surface. Turn on the RF power, confirm that the sample shutter is closed, and observe through the chamber door lens to see if there is ignition.

[0093] S34, magnetron sputtering was completed after a clear glow was observed.

[0094] After the pre-sputtering is completed with the observation of obvious glow, the sample baffle and the turntable are opened at the same time, the sample plate speed is set to 20r / min, and the sputtering time is set to 3 hours; after the sputtering is completed, the RF power supply is turned off, the gas inlet pressure control is interrupted, the molecular pump speed drops to zero, the air is released to break the vacuum, the sample is taken out, and the software is closed first and then the hardware.

[0095] Among them, the Fe3GeTe2 thin film sample peeled off on the SiO2 substrate was subjected to temperature-varying magneto-optical Kerr test analysis, and the following results were obtained: Figure 6 The magneto-optical Kerr MOKE signal is shown in a. The Fe3GeTe2 thin film sample after the test is taken out, and NiO is deposited on its surface using a magnetron sputtering coating instrument to obtain a double-layer NiO / Fe3GeTe2 heterojunction. The sample is then subjected to a variable temperature magneto-optical Kerr test under the same temperature and pressure conditions as before NiO deposition, and the following is obtained: Figure 6 b shows the magneto-optical Kerr MOKE signal of the NiO / Fe3GeTe2 heterojunction.

[0096] Judging from the MOKE signal of a single Fe3GeTe2 thin film sample, at low temperatures, it presents a nearly rectangular hysteresis loop. As the temperature rises, the rectangular hysteresis loop gradually disappears until the coercive field reaches zero and completely disappears. This indicates that in the thin film sample Fe3GeTe2, the reversal of the magnetic moment near the coercive field is instantaneous rather than a gradual transition process. Looking at the magneto-optical Kerr MOKE signal of the heterojunction after sputtering the NiO film, from the overall shape, the hysteresis loop is similar to that of the Fe3GeTe2 film tested alone without the NiO film. At low temperatures, both are like rectangles, and at high temperatures, the hysteresis loop gradually disappears. This also shows that when a large external magnetic field is applied, the Fe3GeTe2 thin film sample has strong out-of-plane magnetic anisotropy and a single magnetic domain.

[0097] At 10K, the coercive field of the Fe3GeTe2 film approaches 0.2T, while the coercive field of the heterojunction after coating with NiO film approaches 0.4T, nearly doubling. Improving the coercive field of the Fe3GeTe2 heterojunction allows it to maintain more stable magnetism under external perturbations, which is beneficial for applications requiring stable magnetism, such as spin valves, magnetic tunnel junctions, sensors, and magnetic random access memories. The two figures show the temperature dependence of the hysteresis curves of the MOKE signal.

[0098] The critical temperature between when the coercive field is no longer observed and when the coercive field is still observed is usually called the Curie temperature. Figure 6 a and Figure 6b It can be seen that before the NiO film is plated, the Curie temperature of the Fe3GeTe2 thin film sample alone is close to 150K, and after the NiO film is plated by magnetron sputtering, the Curie temperature of the NiO / Fe3GeTe2 heterojunction reaches about 180K, a full increase of 30K, showing a strong increase in the Curie temperature. By increasing the Curie temperature of the Fe3GeTe2 heterojunction, its saturation magnetic induction intensity can be increased, thereby increasing the sensitivity and response speed of the magnetic sensor. In addition, magnetic memory storage is a method of storing and reading data based on magnetic principles. In this article, the increase in the Curie temperature of the Fe3GeTe2 heterojunction can increase its magnetic moment and improve its magnetic saturation intensity, thereby increasing the storage density of the magnetic memory storage. This will provide better performance for applications in fields such as magnetic memory. In addition, the present invention also has the advantages of simple and reliable preparation process, low cost, and easy industrial production.

[0099] Through the successful preparation of NiO / Fe3GeTe2 heterojunction, the magneto-optical properties of the two-dimensional ferromagnet Fe3GeTe2 were enhanced using a magneto-optical Kerr measurement system. The Fe3GeTe2 film was prepared by mechanical exfoliation in a glove box and transferred to a SiO2 substrate. NiO was then deposited on the Fe3GeTe2 film by magnetron sputtering to form a NiO / Fe3GeTe2 heterojunction. The NiO / Fe3GeTe2 heterojunction was then subjected to magneto-optical Kerr measurement. The results showed that the superposition of antiferromagnetic NiO layers can significantly improve the coercive field, Curie temperature and magneto-optical Kerr angle of the sample, revealing the potential application prospects of the antiferromagnetic / ferromagnetic proximity coupling effect in regulating the magnetic and magneto-optical properties of Fe3GeTe2.

[0100] Furthermore, the magneto-optical enhancement properties of the Fe3GeTe2 heterojunction can be used to fabricate magneto-optical memory devices. By applying a local magnetic field to the Fe3GeTe2 heterojunction, the magneto-optical response of the local region can be controlled. This magneto-optical memory device offers advantages such as high-speed read / write speed, low power consumption, and high density, and therefore has broad application prospects in the fields of information storage and communications. Overall, the magneto-optical enhancement properties of the Fe3GeTe2 heterojunction are a key characteristic of its application in optoelectronic devices and magneto-optical memory devices, and are of great significance for the development of next-generation high-speed, high-density optoelectronic devices and storage technologies.

[0101] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

[0102] Those skilled in the art will appreciate that the embodiments of the present application can be provided as methods, devices, or computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0103] The embodiments of the present application are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the steps in the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0104] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0105] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0106] Although preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they become aware of the basic inventive concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0107] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or terminal device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or terminal device that includes the element.

[0108] The above is a detailed introduction to the heterostructure preparation method based on magnetron sputtering technology provided by the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, according to the ideas of the present application, there may be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A method for preparing a heterostructure based on magnetron sputtering technology, characterized in that: include: Selecting an adhesive substrate, and using a preset method to prepare the Fe3GeTe2 to be prepared into a thin layer of Fe3GeTe2 with a preset thickness; Obtain a SiO2 substrate and attach a thin layer of Fe3GeTe2 onto the SiO2 substrate; The thin layer of Fe3GeTe2 was magnetron sputtered using NiO target to obtain NiO / Fe3GeTe2 thin film heterojunction.

2. The method for preparing a heterostructure based on magnetron sputtering technology according to claim 1, characterized in that: The Fe3GeTe2 to be prepared is prepared into a thin layer of Fe3GeTe2 with a preset thickness using a preset method, comprising: performing surface treatment on the substrate; The Fe3GeTe2 to be prepared is evenly distributed on a substrate in a closed environment to obtain a base material; Apply a layer of tape on the surface of the base material so that it adheres tightly to the material; Peel off the tape to separate a layer from the surface of the material; Repeat the previous step until a thin layer of Fe3GeTe2 with a preset thickness is obtained.

3. The method for preparing a heterostructure based on magnetron sputtering technology according to claim 1, characterized in that: The default thickness is 25 nm.

4. The method for preparing a heterostructure based on magnetron sputtering technology according to claim 1, characterized in that: Attaching a thin layer of Fe3GeTe2 to a SiO2 substrate includes: Plasma cleaning of SiO2 substrate; The Fe3GeTe2 thin film was transferred onto the SiO2 substrate using a fixed-point transfer platform in a glove box.

5. The method for preparing a heterostructure based on magnetron sputtering technology according to claim 1, characterized in that: Magnetron sputtering of thin Fe3GeTe2 layers using NiO targets includes: Adjust the preset parameters of the magnetron sputtering coater; Place the NiO target on the target base and place the SiO2 substrate with a thin layer of Fe3GeTe2; Construct a magnetron sputtering environment and perform magnetron sputtering on thin layers of Fe3GeTe2; The magnetron sputtering was completed after a clear glow was observed.

6. The method for preparing a heterostructure based on magnetron sputtering technology according to claim 5, characterized in that: Build a magnetron sputtering environment, including: Deflate the sample chamber to destroy the vacuum environment; Place the SiO2 substrate with a thin layer of Fe3GeTe2; After the sample chamber is evacuated to a preset pressure, argon gas is filled in to form a magnetron sputtering environment.

7. The method for preparing a heterostructure based on magnetron sputtering technology according to claim 5, characterized in that: Placing the NiO target on the target base also includes: Place the NiO target on the target base and cover it with the housing, leaving a 2-3mm gap between the housing and the NiO target. Check the resistance between the target and the housing. If no short circuit occurs, proceed to the next step.

8. The method for preparing a heterostructure based on magnetron sputtering technology according to claim 5, characterized in that: Magnetron sputtering of thin Fe3GeTe2 layers using NiO targets, including: Before magnetron sputtering, the thin layer of Fe3GeTe2 was pre-sputtered to clean the surface.

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