Semiconductor workpiece processing equipment and method for reducing particulate matter in processing equipment

Abstract

The invention provides semiconductor workpiece processing equipment and a method for reducing particulate matters in a processing chamber of the semiconductor workpiece processing equipment. The semiconductor workpiece processing equipment comprises a processing chamber and one or more components located in the processing chamber; wherein the component has a polymer composite coating; the polymer composite coating comprises a metal oxide layer located on the surface of the component and a polymer material layer located on the surface of the metal oxide layer; the polymer material layer is formed from a polymer material selected from polytetrafluoroethylene and fluorinated ethylene propylene. The semiconductor workpiece treatment equipment comprises the component with the polymer composite coating, the hydrophobic performance and the corrosion resistance of the surface of the component are improved, and particulate matter generated in the cavity in the semiconductor workpiece treatment process, especially in the plasma environment is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to semiconductor workpiece processing equipment and a method for reducing particles in a processing chamber of the semiconductor workpiece processing equipment. Background Art

[0002] Plasma etching is a key step in semiconductor manufacturing. It selectively etches the wafer surface by generating high-energy plasma within the processing chamber of the etching equipment. However, during the etching process, particles are generated on the etched portion of the wafer surface. Furthermore, plasma bombardment of the chamber walls and components within the chamber can easily cause material flaking and the generation of particles. These particles can deposit on the wafer surface, causing defects and severely impacting semiconductor device performance and the yield of the semiconductor manufacturing process. Summary of the Invention

[0003] The present invention provides a semiconductor workpiece processing device comprising a polymer composite coating and a method for reducing particulate matter in the semiconductor workpiece processing device by using the polymer composite coating.

[0004] According to one aspect of the present invention, a semiconductor workpiece processing apparatus is provided, comprising a processing chamber and one or more components located within the processing chamber, wherein the one or more components have a polymer composite coating. The polymer composite coating comprises a metal oxide layer located on the surface of the one or more components and a polymer material layer located on the surface of the metal oxide layer; the polymer material layer is formed from a polymer material selected from polytetrafluoroethylene and polyperfluoroethylene propylene.

[0005] According to another aspect of the present invention, a method for reducing particulate matter in a semiconductor workpiece processing apparatus is provided, comprising the following steps:

[0006] forming a metal oxide layer and a polymer material layer in sequence on the surface of one or more components in a processing chamber of the semiconductor workpiece processing equipment to form a polymer composite coating;

[0007] Wherein, forming the polymer material layer includes hot-melt coating a polymer material selected from polytetrafluoroethylene and polyperfluoroethylene propylene on the surface of the metal oxide layer.

[0008] The semiconductor workpiece processing equipment according to the present invention can not only ensure the corrosion resistance of the components located in the processing chamber of the semiconductor workpiece processing equipment, but also improve the hydrophobicity of the surface of the components, thereby reducing the generation of particulate matter in the processing chamber, and reducing or even preventing the attachment of particulate matter to the surface of the components in the processing chamber, thereby achieving a performance balance between improving the corrosion resistance of the semiconductor workpiece processing equipment and reducing particulate matter in the processing chamber.

[0009] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The following figures are provided for a better understanding of the present invention and do not constitute a limitation of the present invention.

[0011] Figure 1 is a schematic structural diagram of an etching device according to an embodiment of the present invention;

[0012] Figure 2 A schematic structural diagram of a polymer composite coating according to the present invention is shown;

[0013] Figure 3 is a schematic structural diagram of an anti-disturbance baffle according to one embodiment of the present invention;

[0014] Figure 4 is a process flow chart for reducing particulate matter in semiconductor workpiece processing equipment according to one embodiment of the present invention;

[0015] Figure 5 Schematic diagram of the Cu and Fe ion concentrations of the metal ion contamination concentration test performed on the sample in Example 1. DETAILED DESCRIPTION

[0016] The following description of exemplary embodiments of the present disclosure is made in conjunction with the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be appreciated by those skilled in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope of the present disclosure. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0017] At present, in the field of semiconductor equipment manufacturing, especially etching equipment, oxide protective coatings are usually formed on the surfaces of components in the etching equipment through processes such as thermal spray (Thermal Spray), physical vapor deposition (PVD), and chemical vapor deposition (CVD).

[0018] Commonly used etching gases in semiconductor manufacturing processes include C x F y 、C x H y F z , Cl2, HBr, SF6, NF3, O2 and H2, etc. C x Fy Using a mixture of H2 and MgO as a process reaction gas can achieve superior etch selectivity while minimizing plasma damage to the semiconductor workpiece being processed. However, conventional oxide protective coatings are also susceptible to damage under these mixed gas processing conditions, generating particulate matter. These coatings also tend to absorb the generated particulate matter, contaminating the chamber and affecting the yield of the semiconductor workpiece.

[0019] The present invention implements different coating improvement schemes to change the surface coating of components, mainly solving the problem of making the surfaces of various components in the chamber have better corrosion resistance and hydrophobicity in a plasma environment during the semiconductor manufacturing process, significantly reducing the generation and adhesion of particulate matter in the processing chamber, thereby improving the yield of the semiconductor manufacturing process.

[0020] Polymer composite coating and semiconductor workpiece processing equipment

[0021] The semiconductor workpiece processing equipment of the present invention may include equipment for etching semiconductor workpieces using different types of media, such as a plasma etcher, a reactive ion etcher, an ion beam etcher, etc. Here, the semiconductor workpiece may be a wafer.

[0022] See also Figure 1 , a schematic structural diagram of a semiconductor workpiece processing apparatus according to the present invention. The semiconductor workpiece processing apparatus of the present invention may include a processing chamber and one or more components located within the processing chamber. Specifically, the semiconductor workpiece processing apparatus may include a source electrode 1, an induction coil 2, a processing chamber 3, an air inlet nozzle 4, an electrostatic chuck 6 for supporting a semiconductor workpiece 5, a bias power supply 7, and an anti-disturbance baffle 8.

[0023] According to one embodiment, the semiconductor workpiece processing apparatus of the present invention can form a polymer composite coating on the surface of one or more of the aforementioned components. The component can be any component within the processing chamber, such as the inlet nozzle 4 or showerhead, the inner wall of the processing chamber 3, or the anti-disturbance partition 8.

[0024] In the prior art, the oxide protective coating applied to the surface of components in the processing chamber needs to have a dense structure with low porosity (eg, less than 0.1%) and low roughness (eg, less than 7 μm) to ensure sufficient corrosion resistance.

[0025] The polymer composite coating of the present invention may include a metal oxide layer located on the surface of one or more of the aforementioned components, and a polymer material layer located on the surface of the metal oxide layer. Furthermore, the metal oxide layer may be formed of one or both of aluminum oxide and yttrium oxide, for example, an aluminum oxide layer and / or a yttrium oxide layer. The polymer material layer may be formed of a polymer material selected from polytetrafluoroethylene (PTFE) and poly(fluoroethylene propylene) (FEP).

[0026] See also Figure 2 The polymer composite coating applied to the surface of each component (base layer 11) may include a metal oxide layer 12 and a polymer material layer 13. As shown in the figure, the metal oxide layer 12 has a porous structure, and the surface in contact with the polymer material layer has a certain degree of roughness.

[0027] The polymer material layer used in the present invention is a coating formed of polytetrafluoroethylene and / or poly(perfluoroethylene propylene), which has the characteristics of strong corrosion resistance and high hydrophobicity. The polytetrafluoroethylene and / or poly(perfluoroethylene propylene) layers formed by conventional coating methods have poor adhesion, and are particularly susceptible to damage and shedding under plasma bombardment, generating particulate matter. Therefore, polar components such as polyvinylidene fluoride or polyetheretherketone are usually added to the polytetrafluoroethylene and / or poly(perfluoroethylene propylene) materials to improve the adhesion of the polytetrafluoroethylene and poly(perfluoroethylene propylene) materials. However, these components will reduce the corrosion resistance and hydrophobicity of the coating. The higher the hydrophobicity of the coating, the lower the possibility of particulate matter adhesion, which is more conducive to reducing particulate matter in the processing chamber.

[0028] The metal oxide layer according to the present invention may be formed of a metal oxide selected from aluminum oxide and yttrium oxide. The thickness of the metal oxide layer may be 100 to 200 μm, preferably 115 to 190 μm, for example, 120 μm, 125 μm, 130 μm, 135 μm, 140 μm, 145 μm, 150 μm, 155 μm, 160 μm, 165 μm, 170 μm, 175 μm, 180 μm or 185 μm.

[0029] According to one embodiment, in order to enhance the adhesion of the subsequently coated polymer material layer, the metal oxide layer may have a porous structure. According to one embodiment, the metal oxide layer may have a porosity of 4 to 6%, for example, a porosity of 5%. According to another embodiment, the metal oxide layer may include a surface layer having a porous structure and a bottom layer having a dense structure, thereby ensuring the mechanical strength and corrosion resistance of the coating and enhancing the adhesion of the polymer material layer to the metal oxide layer. Specifically, the metal oxide layer may include a bottom layer with a porosity of 2 to 3% and a surface layer with a porosity of 4 to 6%. The thickness of the bottom layer may be 70 to 100 μm, and the thickness of the surface layer may be 30 to 100 μm.

[0030] When a polymer material layer is hot-melt coated on the surface of the metal oxide layer having the above-mentioned porous structure, the molten polymer material (such as PTFE or FEP) spreads on the surface of the metal oxide layer and penetrates into the pores within the metal oxide layer, providing a mechanical anchor point for the attachment of the polymer material layer, thereby significantly improving the adhesion of the polymer material layer, thereby avoiding falling off and forming particles during the etching process.

[0031] According to another embodiment, the surface of the metal oxide layer in contact with the polymer material layer may have a roughness of 10 to 15 μm to enhance the adhesion of the polymer material layer to the metal oxide layer. Preferably, the roughness may be 12 to 14 μm, for example 13 μm.

[0032] The polymer material forming the polymer material layer may be polytetrafluoroethylene and / or polyperfluoroethylene propylene, wherein the polytetrafluoroethylene may be fusible polytetrafluoroethylene (Perfluoroalkoxy, PFA).

[0033] According to one embodiment, the polymer layer is formed by hot-melt coating the polymer material, resulting in a dense and flat structure. Specifically, the polymer layer may have a porosity of 0.1% or less to ensure sufficient corrosion resistance; and / or a roughness of 1 μm or less, preferably 0.1 to 0.8 μm, to ensure a smooth surface and sufficient hydrophobicity, thereby minimizing the possibility of particulate matter adhesion.

[0034] The thickness of the polymer material layer can be 20 to 800 μm, preferably 230 to 760 μm, more preferably 280 to 720 μm, for example 320 μm, 350 μm, 380 μm, 410 μm, 450 μm, 480 μm, 520 μm, 570 μm, 600 μm, 630 μm, 670 μm, or 700 μm. If the thickness is less than 200 μm, it is not possible to form a dense polymer material layer with high surface smoothness while forming a sufficient anchoring structure. If the thickness is greater than 800 μm, there is no significant improvement in the adhesion and hydrophobicity of the polymer material layer, but the production cost increases.

[0035] The polymer composite coating having the above structure may have a thickness of 120 to 1000 μm, preferably 600 to 900 μm, such as 650 μm, 700 μm, 750 μm, 800 μm or 850 μm.

[0036] The polymer composite coating of the present invention exhibits a corrosion time of more than 120 hours in a 10wt% hydrochloric acid solution at 20-25°C. In the present invention, the corrosion time is determined by immersing a predetermined surface area of ​​a sample in a 10wt% hydrochloric acid solution at 20-25°C. A timer is started and terminated when a large number of bubbles appear in the hydrochloric acid solution or when more than three bubbles appear continuously at the same location per second. The immersion time is then calculated as the corrosion time of the sample.

[0037] The water contact angle of the polymer composite coating of the present invention is above 104°.

[0038] According to one embodiment, the semiconductor workpiece processing apparatus of the present invention may include an anti-disturbance partition. Figure 1 and Figure 3 In the processing chamber 3, an anti-disturbance baffle 8 can be arranged above the semiconductor workpiece and include an edge 9 and a hole structure 10 to reduce gas turbulence in the processing chamber. In the hole structure 10, the aperture of the hole can be 3.5 to 4.5 mm, for example, 3.6 mm, 3.7 mm, 3.8 mm, 3.9 mm, 4.0 mm, 4.1 mm, 4.2 mm, 4.3 mm or 4.4 mm. According to one embodiment, the horizontal cross-sectional shape of the anti-disturbance baffle is substantially consistent with the horizontal cross-sectional shape of the processing chamber. The hole structure of the anti-disturbance baffle can be uniformly distributed or unevenly distributed. For example, the hole density in the central area can be lower than the hole density in the edge area. Preferably, the ratio of the hole density in the central area to the hole density in the edge area can be 1: (1 to 3), for example, 1:2.

[0039] According to another embodiment, the through holes of the hole structure may be a circular hole array and / or a hexagonal honeycomb hole. Furthermore, the through holes of the hole structure may have edge chamfers to reduce airflow separation and suppress the generation of local gas turbulence.

[0040] The anti-disturbance baffle can be made of a metal material, such as aluminum. It can have a polymer composite coating and a porous structure to reduce airflow turbulence, ensure laminar airflow within the processing chamber, and maintain gas flux, thereby ensuring etching uniformity while reducing the generation and adhesion of particles.

[0041] The polymer composite coating has significantly improved corrosion resistance and hydrophobicity, and can be used for the inner wall of the processing chamber of semiconductor workpiece processing equipment, as well as anti-disturbance partitions, shower heads, nozzles and other components located in the processing chamber.

[0042] The semiconductor workpiece processing equipment having the above-mentioned polymer composite coating according to the present invention can improve the hydrophobic properties of the component surface, has good corrosion resistance, and can reduce or even prevent the generation and adhesion of particulate matter, thereby improving the yield of the semiconductor process.

[0043] Method for reducing particulate matter in semiconductor workpiece processing equipment

[0044] According to another aspect of the present invention, a method for reducing particulate matter in semiconductor workpiece processing equipment is provided, comprising forming the above-mentioned polymer composite coating on the surface of one or more components in a processing chamber of the semiconductor workpiece processing equipment.

[0045] Specifically, the method for reducing particulate matter in semiconductor workpiece processing equipment includes sequentially forming a metal oxide layer and a polymer material layer on the surface of one or more components of the semiconductor workpiece processing equipment.

[0046] See also Figure 4 According to a specific embodiment of the present invention, the method of reducing particulate matter in semiconductor workpiece processing equipment includes the following steps.

[0047] Step 110: Pre-treat the surface of the component to be treated. This pre-treatment step can be performed using conventional methods, such as sandblasting, cleaning, and drying. The pre-treated component to be treated is placed in the spraying area or fixture for subsequent coating deposition.

[0048] Step 120: Form a metal oxide layer on the surface of the pretreated component to be treated. The metal oxide layer can be formed from one or both of aluminum oxide and yttrium oxide, for example, an aluminum oxide layer, a yttrium oxide layer, or an aluminum oxide-yttrium oxide layer. The thickness of the metal oxide layer can be 100 to 200 μm, preferably 115 to 190 μm, for example, 120 μm, 125 μm, 130 μm, 135 μm, 140 μm, 145 μm, 150 μm, 155 μm, 160 μm, 165 μm, 170 μm, 175 μm, 180 μm, or 185 μm.

[0049] The above-mentioned metal oxide layer can be formed by depositing the corresponding metal oxide (such as aluminum oxide and / or yttrium oxide) on the surface of the component to be treated by plasma spraying (APS), physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD) or aerosol deposition.

[0050] Alternatively, the metal oxide layer may be formed by oxidizing the surface of the one or more components. The one or more components may be made of aluminum or an alloy of aluminum and yttrium. According to one embodiment, the oxidation treatment may be performed by an anodic oxidation method.

[0051] The porosity of the metal oxide layer formed in the above steps is less than 3%, for example, 2-3%.

[0052] Step 130: Clean and dry the surface of the component with the metal oxide layer. These cleaning and drying steps can be performed using conventional methods in the art. The component with the metal oxide layer treated in step 130 can be subjected to step 140, step 150, or both.

[0053] Step 140: The metal oxide layer is subjected to a porosification treatment, and then cleaned and dried. The cleaning and drying steps can be performed by conventional methods in the art.

[0054] The porosification treatment may include performing laser treatment on the metal oxide layer, so that a portion of the metal oxide layer or the entire metal oxide layer has a porous structure.

[0055] According to one embodiment, the laser treatment may be performed using an ultrashort pulse laser, such as a picosecond or femtosecond laser, with a pulse width of 10 ps to 500 fs and a scanning speed of 100 to 1000 mm / s. The wavelength of the laser may be 355 nm, and the energy density may be 1 to 10 GW / cm 2 .

[0056] The laser treatment can treat the metal oxide layer layer by layer at a depth of 10 to 20 μm per layer, for example, 2 to 5 layers can be treated, for example, 2 layers can be treated. Specifically, the surface layer 30 to 100 μm can be treated with a higher energy density of 5 to 10 GW / cm 2 , a lower scanning speed of 100-300 mm / s can be used to form a porosity of 4-6%; a lower energy density of 1-3 GW / cm can be used for the bottom layer of 70-100 μm 2 The higher scanning speed of 500-1000 mm / s can produce a porosity of 2-3%. The conditions for forming the intermediate layer can be determined according to the desired porosity gradient.

[0057] Furthermore, each layer is preferably cooled for 10 to 50 ms after laser treatment to prevent thermal stress accumulation between layers, which may lead to cracking.

[0058] Step 150: roughening, cleaning and drying the metal oxide layer processed in step 130 or step 140.

[0059] The roughening treatment can increase the roughness of the surface where the metal oxide layer contacts the polymer material layer, for example, to 10 to 15 μm, specifically 11 μm, 12 μm, 13 μm or 14 μm.

[0060] The roughening treatment may be performed by sandblasting. According to one embodiment, the sandblasting process may use silicon carbide with a particle size of 50 to 150 μm as an abrasive and be performed under a pressure of 0.3 to 0.5 MPa.

[0061] When the surface roughness of the metal oxide layer is within the above range, the polymer material layer can have excellent adhesion properties.

[0062] Step 160: hot-melt-coating a polymer material layer on the surface of the metal oxide layer, followed by cleaning and drying. The cleaning and drying steps can be performed using conventional methods in the art.

[0063] In the present invention, a polymer material selected from polytetrafluoroethylene and polyperfluoroethylene propylene is used to form the polymer material layer. According to one embodiment, the polytetrafluoroethylene here can be fusible polytetrafluoroethylene. The temperature of the hot melt coating is within a range that allows the polymer material to flow and spread, preferably 320 to 380°C, such as 330°C, 340°C, 350°C, 360°C, or 370°C.

[0064] The thickness of the polymer material layer may be 20 to 800 μm, the porosity may be less than 0.1%, and the surface roughness may be 0.1 to 1 μm.

[0065] The polymer material layer thus formed can penetrate the pores in the metal oxide layer and / or fill the rough surface of the metal oxide layer to form mechanical anchor points and increase adhesion, thereby overcoming the problem of poor adhesion caused by the high hydrophobicity of polymer materials such as polytetrafluoroethylene and polyperfluoroethylene propylene, and avoiding the reduction of the hydrophobicity of the polymer material layer due to the addition of other polar components used to improve adhesion.

[0066] The water contact angle of the polymer material layer may be greater than 104°.

[0067] The polymer composite coating formed by the above method and having the above structure can retain the high hydrophobicity and excellent adhesion performance of the polymer material layer while maintaining high mechanical strength and corrosion resistance.

[0068] According to another embodiment, the above method may further include:

[0069] Step 100. Before forming the metal oxide layer and the polymer material layer, an anti-disturbance baffle is placed in the processing chamber above the semiconductor workpiece, and a hole structure is provided in the anti-disturbance baffle to reduce gas turbulence in the processing chamber. The hole structure can have a diameter of 3.5 to 4.5 mm, such as 3.6 mm, 3.7 mm, 3.8 mm, 3.9 mm, 4.0 mm, 4.1 mm, 4.2 mm, 4.3 mm, or 4.4 mm.

[0070] The hole structure of the anti-disturbance partition can be evenly distributed or unevenly distributed. For example, the hole density in the central area can be lower than the hole density in the edge area. Preferably, the ratio of the hole density in the central area to the hole density in the edge area can be 1:(1~3), for example 1:2.

[0071] According to another embodiment, the through holes of the hole structure may have a circular array arrangement and / or a hexagonal honeycomb arrangement. Furthermore, the through holes of the hole structure may have edge chamfers to reduce airflow separation and suppress the generation of local airflow turbulence.

[0072] The above-mentioned anti-disturbance baffle can be made of metal material, such as aluminum, and can have the above-mentioned polymer composite coating and porous structure.

[0073] According to the above method of the present invention, by providing an anti-disturbance baffle with a porous structure and / or forming a polymer composite coating on the surface of the component, the turbulence of the airflow in the processing chamber can be reduced or prevented, while ensuring sufficient gas flux reaching the surface of the semiconductor workpiece, thereby achieving the goal of reducing the generation and adhesion of particulate matter while ensuring the uniformity and efficiency of etching.

[0074] The present invention will be further described below by way of examples, but the present invention is not limited thereto.

[0075] Example

[0076] Example 1 (single-layer porous structure)

[0077] The aluminum substrate was sandblasted, cleaned, and dried;

[0078] Anodizing the surface of the aluminum substrate to form an aluminum oxide layer on the surface of the aluminum substrate;

[0079] Cleaning and drying the surface of the aluminum oxide layer on the aluminum substrate;

[0080] The aluminum oxide layer of the aluminum substrate is laser treated to form a porous structure, wherein the laser treatment is performed using a picosecond laser with a wavelength of 355 nm and an energy density of 10 GW / cm 2 The laser-treated aluminum substrate was tested for its porosity (P1) of 5.3% (Hitachi™ 4000 Plus), roughness (RaI) (Fischer FMP10), hydrochloric acid etching time, and porous layer thickness (T1) (SJ210). The results are shown in Table 1.

[0081] Cleaning and drying the surface of the aluminum substrate having a porous structure;

[0082] PTFE was hot-melt-coated onto the surface of a porous aluminum substrate to form a polymer layer, resulting in Sample I. The porosity (P3) and thickness (T2) of the PTFE layer (Hitachi™ 4000 Plus) were measured, as were the total thickness (T0) and roughness (RaII) of the polymer composite coating consisting of the aluminum oxide and PTFE layers.

[0083] The following corrosion time tests were performed on sample I:

[0084] 1. Prepare an 18mm inner diameter plastic tube (resistant to hydrochloric acid corrosion), freshly prepared 10wt% hydrochloric acid reagent and the test sample;

[0085] 2. Use sealant to stick the plastic tube to the coating surface;

[0086] 3. Inject 7 mL of freshly prepared 10 wt% hydrochloric acid solution and start timing;

[0087] 4. When a large number of bubbles appear in the hydrochloric acid solution or more than three consecutive bubbles appear at the same point per second, the timing is terminated and the obtained time is the corrosion time.

[0088] The following metal ion contamination concentration test was performed on sample I: At room temperature, 5% dilute nitric acid was dropped on the surface of sample I. After 30 seconds, 50 μL was aspirated and diluted 20 times. The Cu and Fe ion concentrations were measured using an inductively coupled plasma mass spectrometer (ICP-MS) NexION2000. The test results are shown in Figure 5 .Depend on Figure 5 It can be seen that CIP 6061 represents the sample I prepared according to the above process, and POR represents the original aluminum substrate. The pollution concentration of metal ions such as Fe and Cu in CIP 6061 is significantly lower than that in POR.

[0089] The contact angles of the surface of sample I with water or diiodomethane were tested, and the results are shown in Table 2. The steps for testing the contact angle using the sessile drop method are as follows:

[0090] The sample was ultrasonically cleaned in ethanol and dried for later use;

[0091] Calibrate the instrument so that the surface is perfectly level;

[0092] At 25°C, place the sample on the instrument surface and drop 2 μL of ultrapure water or diiodomethane onto the center of the sample surface.

[0093] Within 5 seconds after the droplet contacts the surface, a high-speed camera (≥100 fps) is used to capture the side image of the droplet;

[0094] Repeat the measurement at 3 different locations;

[0095] The droplet profile was fitted using the Ellipse fitting method, and the average value of the contact angle was calculated as the contact angle of the sample.

[0096] Sample I was subjected to the following particle size test: Sample I was prepared into a 12-inch test specimen in a Class 100 cleanroom (temperature 22±1°C, humidity 45±5%). The specimen was then tested using a KLA surfscan sp3 surface particle counter, recording the number of particles ≥0.12 μm over a period of 5 days. The results are shown in Table 2.

[0097] Example 2 (double-layer porous structure)

[0098] Sample II was prepared in the same manner as in Example 1, except that the laser conditions in the porosification step were as follows: the energy density of the first laser scan was 5 GW / cm 2 , the scanning speed is 100mm / s; the energy density of the second laser scan is 1GW / cm 2, with a scanning speed of 500 mm / s. Sample II was obtained. Using the same methods as in Example 1, sample II was tested for porosity (surface layer P1 and bottom layer P2 of the aluminum oxide layer), thickness T0 of the polymer composite coating, metal contamination concentration, contact angle, and hydrochloric acid corrosion time. The results are shown in Table 1.

[0099] Example 3 (Roughening treatment instead of porosification treatment)

[0100] The aluminum substrate was sandblasted, cleaned, and dried;

[0101] Anodizing the surface of the aluminum substrate to form an aluminum oxide layer on the surface of the aluminum substrate;

[0102] Cleaning and drying the surface of the aluminum oxide layer on the aluminum substrate;

[0103] Using silicon carbide with a particle size of 50 μm as an abrasive, the aluminum oxide layer on the aluminum substrate was roughened by sandblasting at a pressure of 0.3 to 0.5 MPa. The porosity P (Hitachi™ 4000 Plus) and roughness I (Fischer FMP10) of the aluminum oxide layer after the roughening treatment, as well as the thickness T1 of the aluminum oxide layer (SJ210) were measured. The results are shown in Table 1.

[0104] Cleaning and drying the roughened aluminum substrate surface;

[0105] PTFE was hot-melt-coated on the roughened aluminum substrate to form a polymer layer. This yielded Sample III. Using the same methods as in Example 1, Sample III was tested for the thickness T2 (SJ210) of the PTFE layer, as well as the total thickness T0 and roughness II of the polymer composite coating consisting of the aluminum oxide layer and PTFE layer.

[0106] The porosity, thickness T0 of the polymer composite coating, metal ion contamination concentration, contact angle, and hydrochloric acid corrosion time of sample III were tested in the same manner as in Example 1. The results are shown in Table 1.

[0107] Example 4

[0108] A sample was prepared using the same method as in Example 1, except that FEP was used instead of PTFE. Sample IV was obtained. Sample IV was tested for porosity, layer thickness, metal ion contamination concentration, particle size, contact angle, and hydrochloric acid corrosion time using the same methods as in Example 1. The results are shown in Tables 1 and 2.

[0109] Example 5

[0110] A sample was prepared using the same method as in Example 1, except that PFA was used instead of PTFE. Sample V was obtained. Sample V was tested for porosity, layer thickness, metal ion contamination concentration, particle size, contact angle, and hydrochloric acid corrosion time using the same methods as in Example 1. The results are shown in Tables 1 and 2.

[0111] Comparative Example 1

[0112] A sample was prepared using the same method as in Example 1, except that the porosification step was omitted. Sample VI was obtained. Sample VI was tested for porosity, layer thickness, metal ion contamination concentration, and hydrochloric acid corrosion time using the same method as in Example 1. The results are shown in Table 1.

[0113] Comparative Example 2

[0114] A sample was prepared using the same method as in Example 1, except that the anodizing and porosification steps were omitted. This yielded Sample VII. Sample VIII was tested for porosity, layer thickness, metal ion contamination concentration, and hydrochloric acid corrosion time using the same method as in Example 1. The results are shown in Table 1.

[0115] Comparative Example 3

[0116] An aluminum substrate was anodized using the same method as in Example 1 to prepare Sample VIII. Sample VIII was tested for porosity, layer thickness, metal ion contamination concentration, particle size, contact angle, and hydrochloric acid corrosion time. The results are shown in Tables 1 and 2.

[0117] Comparative Example 4

[0118] The aluminum substrate used in the above example was used as sample IX. Sample VIII was tested for porosity, metal ion contamination concentration, and hydrochloric acid corrosion time. The results are shown in Table 1.

[0119] Table 1

[0120]

[0121] Notes:

[0122] P1: Porosity of the oxide layer (surface)

[0123] P2: Porosity of the underlying oxide layer

[0124] P3: Porosity of polymer material layer

[0125] RaI: roughness of oxide layer

[0126] RaII: Roughness of polymer composite coating

[0127] T1: thickness of the porous layer

[0128] T2: Thickness of polymer material layer

[0129] T0: total thickness of polymer composite coating

[0130] Table 2

[0131]

[0132] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in this disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in this disclosure can be achieved. This is not limited herein.

[0133] The above specific embodiments do not constitute a limitation on the scope of protection of this disclosure. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the principles of this disclosure shall be included within the scope of protection of this disclosure.

Claims

1. A semiconductor workpiece processing apparatus comprising a processing chamber and one or more components located in the processing chamber, characterized in that: The one or more components have a polymer composite coating; Wherein, the polymer composite coating comprises a metal oxide layer located on the surface of the one or more components, and a polymer material layer located on the surface of the metal oxide layer; and The polymer material layer is formed of a polymer material selected from polytetrafluoroethylene and polyperfluoroethylene propylene.

2. The semiconductor workpiece processing apparatus according to claim 1, wherein: The thickness of the polymer composite coating is 120 to 1000 μm, the thickness of the metal oxide layer is 100 to 200 μm, and the thickness of the polymer material layer is 20 to 800 μm.

3. The semiconductor workpiece processing apparatus according to claim 1, wherein: The surface of the metal oxide layer in contact with the polymer material layer has a roughness of 10 to 15 μm.

4. The semiconductor workpiece processing apparatus according to claim 1, wherein: The metal oxide layer has a porous structure.

5. The semiconductor workpiece processing apparatus according to claim 4, wherein: The metal oxide layer has a porosity of 4 to 6%; or The metal oxide layer includes a bottom layer with a porosity of 2-3% and a surface layer with a porosity of 4-6%.

6. The semiconductor workpiece processing apparatus according to claim 5, wherein: The surface layer of the metal oxide layer has a thickness of 30 to 100 μm.

7. The semiconductor workpiece processing apparatus according to any one of claims 1 to 6, wherein: The polytetrafluoroethylene is fusible polytetrafluoroethylene.

8. The semiconductor workpiece processing apparatus according to any one of claims 1 to 6, wherein: The metal oxide is selected from one or both of aluminum oxide and yttrium oxide.

9. The semiconductor workpiece processing apparatus according to any one of claims 1 to 6, wherein: The semiconductor workpiece processing equipment is an etching equipment.

10. The semiconductor workpiece processing apparatus according to any one of claims 1 to 6, wherein: The one or more components are selected from the inner wall of the processing chamber, a shower head, a nozzle and an anti-disturbance baffle arranged in the processing chamber.

11. The semiconductor workpiece processing apparatus according to claim 10, wherein: The anti-disturbance baffle is arranged above the semiconductor workpiece and has a hole structure for reducing gas turbulence in the processing chamber.

12. The semiconductor workpiece processing apparatus according to claim 11, wherein: The pore structure has a pore diameter of 3.5 to 4.5 mm.

13. The semiconductor workpiece processing apparatus according to any one of claims 1 to 6, wherein: The polymer material layer has one or more of the following characteristics: The porosity of the polymer material layer is less than 0.1%; The roughness of the polymer material layer is 0.1-1 μm.

14. A method for reducing particulate matter in a semiconductor workpiece processing device, characterized in that: The following steps are involved: forming a metal oxide layer and a polymer material layer in sequence on the surface of one or more components in a processing chamber of the semiconductor workpiece processing equipment to form a polymer composite coating; Wherein, forming the polymer material layer includes hot-melt coating a polymer material selected from polytetrafluoroethylene and polyperfluoroethylene propylene on the surface of the metal oxide layer.

15. The method according to claim 14 further includes setting an anti-disturbance partition in the processing chamber and above the semiconductor workpiece before forming the metal oxide layer and the polymer material layer, and setting a hole structure in the anti-disturbance partition to reduce gas turbulence in the processing chamber.

16. The method according to claim 15, wherein The pore structure has a pore diameter of 3.5 to 4.5 mm.

17. The method according to claim 14, wherein: Forming the metal oxide layer includes depositing metal oxide on the surface of the one or more components by plasma spraying, physical vapor deposition, chemical vapor deposition, atomic layer deposition or aerosol deposition, and the metal oxide is selected from one or both of aluminum oxide and yttrium oxide.

18. The method according to claim 14, wherein Forming the metal oxide layer includes performing an oxidation treatment on the surface of the one or more components so that the surface layer of the one or more components is a metal oxide layer, wherein the one or more components are composed of aluminum, or composed of aluminum and yttrium. 19 . The method according to claim 14 , further comprising roughening, cleaning, and drying the surface of the metal oxide layer after forming the metal oxide layer and before forming the polymer material layer. 20 . The method according to claim 19 , wherein the surface of the roughened metal oxide layer has a roughness of 10 to 15 μm.

21. The method according to claim 19, wherein The roughening process is performed by a sandblasting process. 22 . The method according to claim 14 , further comprising, after forming the metal oxide layer and before forming the polymer material layer, performing a porosification treatment on the metal oxide layer, and cleaning and drying the metal oxide layer.

23. The method according to claim 22, wherein After being porous treated, the metal oxide layer has a porosity of 4 to 6%; or After the porous treatment, the metal oxide layer includes a bottom layer with a porosity of 2-3% and a surface layer with a porosity of 4-6%.

24. The method according to claim 22, wherein The porosification treatment includes performing laser treatment on the coated metal oxide layer, so that the metal oxide layer has a porous structure in at least a portion of the thickness direction.

25. The method according to claim 24, wherein The laser treatment processes the metal oxide layer layer by layer at a depth of 10 to 20 μm per layer.

26. The method according to claim 23, wherein The thickness of the surface layer of the metal oxide layer is 30 to 100 μm.

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