Sheet wafer cleaning method and semiconductor product
By optimizing thin wafer cleaning through specific jigs and cleaning steps, the high cost of equipment and reagents in traditional methods is solved, and efficient, convenient and environmentally friendly cleaning effects are achieved, which is suitable for second and third generation semiconductor materials.
Patent Information
- Application Number
- CN202510606304.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-12
- Publication Date
- 2025-09-23
AI Technical Summary
Traditional thin wafer cleaning methods have high equipment and reagent costs and strict parameter control. They are easily affected by factors such as temperature and are difficult to meet the efficient cleaning needs of second- and third-generation semiconductor materials.
The specific first fixture and second fixture are used in conjunction with plasma bombardment, organic solvent cleaning, overflow water cleaning and acid cleaning steps, combined with specific solvent use and drying methods, to avoid the use of expensive special equipment and optimize the cleaning process.
It achieves efficient, convenient and environmentally friendly cleaning of thin wafers, avoids breakage and scratches, reduces equipment and reagent costs, and improves cleaning efficiency and equipment compatibility.
Smart Images
Figure CN120690668A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductor manufacturing technology, and specifically relates to a thin wafer cleaning method and a semiconductor product. Background Art
[0002] In the semiconductor manufacturing process, the surface quality of thin wafers has a significant impact on the final performance and chip appearance yield. With the development of semiconductor technology, the second and third generation semiconductor materials have gradually emerged, improving the performance of chips, but at the same time, higher requirements have been placed on the thin wafers used to manufacture chips. During the thin wafer manufacturing process, pollutants such as dust, organic residues and metal oxides on the surface of the thin wafers will affect the quality of the thin wafers, and may even cause the performance of the chips finally made from the contaminated thin wafers to be seriously degraded. Therefore, the cleaning method is closely related to the quality and yield of semiconductor thin wafers. Due to the more fragile nature of second and third generation semiconductor materials, the cleaning of thin wafers of a specific thickness will be more challenging, and it is necessary to effectively avoid problems such as breakage and scratches.
[0003] Traditionally, after rinsing thin wafers, the Maragni drying method is often used to dry them. This method has three major issues: 1. High equipment costs. Because this drying method requires precise control of the addition of surfactant desiccant and the drying process of the thin wafers, the equipment typically requires more sophisticated manufacturing technology, resulting in extremely high equipment costs; 2. High reagent costs and large dosages. The surfactant requires a continuous supply and is not reusable, increasing the cost of each drying process. 3. Parameter control is strict, and the process is easily affected by factors such as temperature.
[0004] Therefore, it is necessary to develop a new method for cleaning thin wafers to solve the problems existing in traditional technical means. Summary of the Invention
[0005] The purpose of this application is to address the deficiencies of the prior art and provide a method for cleaning a thin wafer and a semiconductor product, specifically adopting the following technical solutions:
[0006] First, the present application provides a method for cleaning a thin wafer. During the cleaning process, a first jig and a second jig are used. The first jig is a circular silicon wafer, and a groove for accommodating the thin wafer is provided on the surface of the circular silicon wafer. The second jig is a circular double-sided frosted glass sheet. The surface of the second jig includes a first area and a second area. The edge of the surface of the second jig is offset inward by a first distance to form a boundary between the first area and the second area. The first area is located inside the second area, and the first area is provided with a plurality of circular through holes distributed in an array.
[0007] The cleaning method includes the following steps:
[0008] The thickness of the thin wafer is 80μm to 140μm; the thin wafer to be cleaned is referred to as thin wafer A, and thin wafer A is placed in the groove of the first fixture and plasma bombarded to obtain thin wafer B; then thin wafer B is transferred to a cleaning container, and a second fixture is used to support thin wafer B, and thin wafer B is sequentially subjected to a first organic solvent cleaning and a second organic solvent cleaning, followed by a first overflow water wash to obtain thin wafer C; thin wafer C is acid-washed, followed by a second overflow water wash to obtain thin wafer D, which is then dried to obtain a cleaned thin wafer.
[0009] In some specific implementations, an edge of the first fixture groove is provided with an opening.
[0010] In some specific implementations, the distance between adjacent round through holes in the second fixture is 3 mm to 5 mm.
[0011] In some specific implementations, the first organic solvent cleaning step includes:
[0012] The thin wafer B is soaked in N-methylpyrrolidone for 4 to 6 minutes.
[0013] In some specific implementations, the step of washing with a second organic solvent comprises:
[0014] Immerse wafer B in isopropyl alcohol for 2-4 minutes.
[0015] In some specific implementations, the first overflow water washing step includes: using deionized water to perform overflow washing on the thin wafer B for 0.5 min to 1.5 min each time, and repeating the operation 2 to 4 times;
[0016] In some specific implementations, the second overflow water washing step includes: using deionized water to perform overflow washing on the thin wafer C, each time for 0.5 min to 1.5 min, and repeating 2 to 4 times.
[0017] In some specific implementations, the pickling step includes:
[0018] The thin wafer C is immersed in a sulfuric acid aqueous solution with a mass fraction of 1% to 3% for 40s to 50s.
[0019] In some specific implementations, the drying step includes:
[0020] Nitrogen is introduced into the drying device and preheated to 100°C. After the temperature is kept stable for 5-10 minutes, the thin wafer D is transferred to the drying device for drying. The drying time does not exceed 10 minutes.
[0021] Secondly, the present application also provides a semiconductor product made from wafers obtained by the above-mentioned thin wafer cleaning method.
[0022] In some specific implementations, the semiconductor article is prepared within 20 minutes after drying is completed.
[0023] The beneficial effects of the present application are: combined with plasma bombardment, a specific first fixture and a second fixture are used to process a thickness of 80μm to 140μm. Since a specific second fixture is used to support the thin wafer, the thin wafer is not easily damaged during the cleaning process, so that the cleaning process of the thin wafer is compatible with the cleaning equipment used for thick wafers, and the traditional drying method is avoided during the processing process, which greatly optimizes the cleaning method of the thin wafer, thereby avoiding the use of expensive special equipment and making the specific process simple, efficient, convenient and environmentally friendly. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 The figure shows a schematic diagram of a specific implementation of the first fixture in the specific embodiment;
[0025] Figure 2 Shown is a schematic diagram of a specific implementation of the second fixture in a specific embodiment. DETAILED DESCRIPTION
[0026] The following will be combined with the specific implementation methods and drawings to clearly and completely describe the concept, specific structure and technical effects of this application, so as to fully understand the purpose, scheme and effect of this application. It should be noted that the embodiments and features in the embodiments of this application can be combined with each other unless there is a conflict. The same reference numerals used throughout the drawings indicate the same or similar parts.
[0027] Combined with attachment Figure 1 -Attached Figure 2 First, the present application provides a method for cleaning a thin wafer. During the cleaning process, a first jig and a second jig are used. The first jig is a circular silicon wafer, and a groove for accommodating the thin wafer is provided on the surface of the circular silicon wafer. The second jig is a circular double-sided frosted glass sheet. The surface of the second jig includes a first area and a second area. The edge of the surface of the second jig is offset inward by a first distance to form a boundary between the first area and the second area. The first area is located inside the second area, and the first area is provided with a plurality of circular through holes distributed in an array.
[0028] The cleaning method includes the following steps:
[0029] The thickness of the thin wafer is 80μm to 140μm; the thin wafer to be cleaned is taken as thin wafer A, and thin wafer A is placed in the groove of the first fixture and plasma bombarded to obtain thin wafer B; then thin wafer B is transferred to a cleaning container, and a second fixture is used to support thin wafer B, and thin wafer B is sequentially subjected to a first organic solvent cleaning and a second organic solvent cleaning, followed by a first overflow water washing to obtain thin wafer C; thin wafer C is acid-washed, followed by a second overflow water washing to obtain thin wafer D, and dried to obtain a cleaned thin wafer.
[0030] Take a thin wafer with a thickness of 80 μm that has completed the previous thinning process (in some other specific implementation cases, the wafer thickness can be any value in the range of 80 μm-140 μm). During the thinning process of the wafer, bonding glue often remains on its surface. At this time, the bonding glue remaining on the surface of the thin wafer is removed by plasma bombardment to facilitate subsequent further cleaning. In this process, in order to ensure that the thin wafer with a thickness of 80 μm (in some other specific implementation cases, the wafer thickness can be any value in the range of 80 μm-140 μm) can remain flat during the plasma bombardment process, The first fixture can maintain a stable posture and avoid surface scratches caused by wear and tear that affect the final quality. At the same time, it is convenient for the subsequent cleaning step to prevent the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) from being worn or even damaged during the transfer process. Therefore, it is necessary to use a dedicated first fixture to reliably carry the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) in the plasma bombardment debonding cleaning step;
[0031] Furthermore, in this specific embodiment, the first fixture is circular, made of silicon, and has a flat surface. The number of grooves provided on the upper surface of the first fixture is four (in some other specific implementations, the number of grooves may be one, two, three, or more), and the radius of the groove matches the radius of the 80 μm thin wafer to be cleaned (in some other specific implementations, the wafer thickness may be any value within the range of 80 μm-140 μm), so that the 80 μm thin wafer (in some other specific implementations, the wafer thickness may be any value within the range of 80 μm-140 μm) during the plasma bombardment process is consistent with the radius of the 80 μm thin wafer. The thickness of the wafer can be any value in the range of 80μm-140μm) and can be stably embedded in the groove of the first fixture to avoid relative movement between the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) and the first fixture, thereby preventing the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) from being scratched during the plasma bombardment process. An opening is also provided at the edge of the groove to facilitate the removal of the thin wafer after processing is completed.
[0032] At the same time, during the plasma bombardment process, the first jig used should be kept dust-free and clean to prevent scratches on the 80 μm thin wafer being cleaned (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm);
[0033] After the plasma bombardment is completed, the 80 μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm) in the first fixture is transferred to the cleaning box using a suction cup, and the 80 μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm) is supported by a second fixture to prevent damage;
[0034] In some specific implementations, the distance between adjacent round through holes in the second fixture is 3 mm to 5 mm.
[0035] In the specific implementation process of the thin wafer cleaning method provided in the present application, the second fixture is made of glass, the surface is frosted, and the shape is circular. The radius of the second fixture is not less than the radius of the thin wafer, and there are evenly distributed circular holes on the surface of the fixture (i.e., the first area). The diameter of the circular holes is 4 mm (in some other specific real-time situations, the diameter of the circular holes will be adjusted according to actual needs), and the spacing is 3 mm (in some other specific implementation situations, the hole spacing will be adjusted according to actual needs). The spacing here refers to the distance between the edges of adjacent circular holes in the direction of the center line connecting the adjacent circular holes; the annular surface of the second fixture surface that is retracted inward by 10 mm is a non-porous structure (i.e., the second area);
[0036] Since, in the specific implementation process of the thin wafer cleaning method provided in the present application, it is necessary to place the 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) stably and reliably in the cleaning box, and the 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) in the cleaning box is cleaned multiple times, the 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) needs to be transferred multiple times during the cleaning process, and it is also necessary to use A variety of different solvents are used. During this process, the 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) will be subjected to multiple liquid impacts, which means that it is necessary to solve the problem of fixed support of the 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) during multiple cleaning processes. Therefore, it is necessary to design a dedicated second fixture so that the 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) can be fully cleaned and Stable support is more convenient for subsequent transfer after cleaning. Therefore, the second fixture provided in the present application is a circular double-sided frosted glass sheet. Here, "double-sided" refers to the two sides with the largest diameter of the glass sheet. The frosted surface is used to avoid the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) from being adsorbed on the second fixture, resulting in difficulty in separation; the second fixture has the same radius as the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm). In some other specific implementations, the size of the second fixture is the same as the thin wafer being processed. The difference in radius is less than 1 mm, the specific circular through holes of the second fixture are all 4 mm in diameter, the interval between adjacent circular holes is 3 mm, and the circular holes are avoided from being distributed 1 cm from the edge of the glass sheet, so that during the processing, the second fixture can fully support the 80 μm thin wafer (in some other specific implementations, the wafer thickness can be any value within the range of 80 μm-140 μm). At the same time, the circular holes provided therein can enable the 80 μm thin wafer (in some other specific implementations, the wafer thickness can be any value within the range of 80 μm-140 μm) to be fully cleaned during the liquid washing process, avoiding the problem of incomplete cleaning;
[0037] Subsequently, the first organic solvent cleaning is performed, followed by the second organic solvent cleaning, so that the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) is fully cleaned under the support of the second fixture while avoiding damage; after completing the second organic solvent cleaning, the first overflow water washing is required. The first overflow water washing is to fully clean the organic solvent remaining in the first organic solvent cleaning process and the second organic solvent cleaning process, so that the 80μm thin wafer (in In some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) to facilitate subsequent pickling; after the pickling is completed, a second overflow water wash is required to fully clean the acid remaining on the surface of the 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm); the clean 80μm thin wafer (in some other specific implementation cases, the wafer thickness can be any value in the range of 80μm-140μm) obtained subsequently needs to be fully dried.
[0038] The thickness of the thin wafer is 80μm to 140μm.
[0039] In some specific implementations, the step of plasma bombardment includes:
[0040] The thin wafer is bombarded with oxygen-containing plasma. The oxygen-containing plasma can effectively remove a portion of the bonding adhesive remaining on the surface of the 80μm thin wafer (in some other specific embodiments, the wafer thickness can be any value in the range of 80μm-140μm). This allows subsequent processing to quickly, efficiently, and conveniently fully clean the 80μm thin wafer (in some other specific embodiments, the wafer thickness can be any value in the range of 80μm-140μm).
[0041] In some specific implementations, an opening is provided at the edge of the first fixture groove, and the opening is provided at the edge of the groove to facilitate taking out the thin wafer after processing is completed.
[0042] In some specific implementations, the first organic solvent cleaning step includes:
[0043] The thin wafer is soaked in N-methylpyrrolidone (NMP) for 4-6 minutes. The 80 μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm) is soaked in N-methylpyrrolidone for 5 minutes (in some other specific implementations, the soaking time can be any value in the range of 4-6 minutes), so that the bonding glue remaining on the surface of the 80 μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm) after plasma bombardment is fully dissolved and detached.
[0044] In some specific implementations, the step of washing with a second organic solvent comprises:
[0045] Immerse the thin wafer in isopropyl alcohol (IPA) for 2-4 minutes. After the first organic solvent cleaning, a small amount of N-methylpyrrolidone will remain on the surface of the 80μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm). In order to fully remove the residual N-methylpyrrolidone and ensure the cleanliness of the surface of the 80μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm), it is necessary to use isopropyl alcohol for a second organic solvent cleaning; In this specific embodiment, isopropyl alcohol is used to immerse the 80 μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm) for 3 minutes (in some other specific implementations, the immersion time can be any value in the range of 2 minutes-4 minutes) to fully remove the N-methylpyrrolidone remaining on the surface of the 80 μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm).
[0046] In some specific implementations, the first overflow water washing step includes: using deionized water to perform overflow washing on the thin wafer B, each time for 0.5min-1.5min, and repeating 2-4 times; after completing the second organic solvent washing, it is necessary to use deionized water to clean the surface of the 80μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm); in this specific embodiment of the present application, using deionized water to clean the surface of the 80μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) In a specific implementation, the wafer thickness can be any value in the range of 80μm-140μm) for overflow cleaning, each time for 1 minute (in some other specific implementations, the cleaning time can be any value in the range of 0.5min-1.5min), repeated 3 times (in some other specific implementations, the cleaning is repeated 2 times or 4 times), thereby cleaning the isopropyl alcohol remaining on the surface of the 80μm thin wafer B (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm).
[0047] Since a second fixture is used to support the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm), the thin wafer can be washed with overflow water during the water washing process, which greatly improves the equipment compatibility and cleaning efficiency.
[0048] In some specific implementations, the pickling step includes:
[0049] The thin wafer C is immersed in a 1%-3% sulfuric acid aqueous solution for 40-50 seconds. After the first overflow water rinse, the 80 μm thin wafer C (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm) is pickled in 1% dilute sulfuric acid (in some other specific implementations, the mass fraction of the sulfuric acid aqueous solution can be any value in the range of 1%-3%) to facilitate subsequent processing.
[0050] In some specific implementations, the second overflow water washing step includes: using deionized water to overflow clean the 80μm thin wafer C (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm), each time for 0.5min-1.5min, and repeating 2-4 times. After the acid pickling is completed, deionized water is needed to clean the surface of the 80μm thin wafer C (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm); in this specific embodiment of the present application, deionized water is used to perform overflow cleaning on the 80μm thin wafer C (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm), each time for 1min (in some other specific implementations, the cleaning time can be any value in the range of 0.5min-1.5min), and repeated 3 times (in some other specific implementations, the cleaning repetition number can be 2 times or 4 times), thereby cleaning the residual sulfuric acid aqueous solution on the surface of the 80μm thin wafer C (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm).
[0051] In some specific implementations, the drying step includes:
[0052] Nitrogen is introduced into the drying device and preheated to 100°C. After the temperature is kept stable for 5-10 minutes, the thin wafer D is transferred to the drying device for drying. The drying time does not exceed 10 minutes. After completing the second overflow water washing, the surface of the 80μm thin wafer D (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) needs to be fully dried to facilitate subsequent semiconductor product processing. Therefore, nitrogen needs to be used for sufficient drying. During this process, the nitrogen needs to be preheated to 100°C and maintained at a stable temperature for 10 minutes (in some other specific implementations, the time for maintaining the stable temperature can be any value in the range of 5min-10min). After completing the second overflow water washing, the 80μm thin wafer D (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) at room temperature is transferred to a drying device and dried for 10 minutes (in some other specific implementations, the drying duration can be any time within 10 minutes) to ensure that the moisture on the surface of the 80μm thin wafer D (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) is fully dried.
[0053] Secondly, the present application also provides a semiconductor product made from wafers produced using the above-mentioned thin wafer cleaning method.
[0054] After the above cleaning is completed on the 80 μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80 μm-140 μm), it can be further processed to produce a semiconductor product.
[0055] In some specific implementations, the semiconductor article is prepared within 20 minutes after the first drying is completed.
[0056] In this specific implementation of the present application, when the 80μm thin wafer (in some other specific implementations, the wafer thickness can be any value in the range of 80μm-140μm) completes the first drying, subsequent processing begins 20 minutes later (in some other specific implementations, the semiconductor product can be subsequently processed at any time within 20 minutes after the first drying is completed) to prepare the semiconductor product. Performing subsequent processing in a shorter time can maximize the possibility of obtaining higher quality semiconductor products.
[0057] Although the description of the present application has been quite detailed and specifically describes several embodiments, it is not intended to be limited to any of these details or embodiments or any particular embodiment, but should be regarded as providing a broad possible interpretation of these claims by reference to the appended claims in view of the prior art, thereby effectively covering the intended scope of the present application. In addition, the above description of the present application is based on the embodiments foreseeable by the applicant, which is intended to provide a useful description, and those non-substantial changes to the present application that have not yet been foreseen may still represent equivalent changes to the present application.
Claims
1. A method for cleaning a thin wafer, characterized in that: The cleaning method uses a first jig and a second jig. The first jig is a circular silicon wafer having a groove on its surface for accommodating the thin wafer. The second jig is a circular double-sided frosted glass sheet. The surface of the second jig includes a first region and a second region. The edge of the surface of the second jig is offset inward by a first distance to form a boundary between the first region and the second region. The first region is located inside the second region. The first region is provided with a plurality of circular through holes distributed in an array. The cleaning method comprises the following steps: The thickness of the thin wafer is 80μm to 140μm; the thin wafer to be cleaned is taken as thin wafer A, and the thin wafer A is placed in the groove of the first fixture and plasma bombarded to obtain thin wafer B; then the thin wafer B is transferred to a cleaning container, and the second fixture is used to support the thin wafer B, and the thin wafer B is sequentially subjected to the first organic solvent cleaning and the second organic solvent cleaning, followed by the first overflow water washing to obtain thin wafer C; the thin wafer C is acid-washed, followed by the second overflow water washing to obtain thin wafer D, and dried to obtain the cleaned thin wafer.
2. The method for cleaning a thin wafer according to claim 1, wherein: An opening is provided at the edge of the groove.
3. The method for cleaning a thin wafer according to claim 1, wherein: The step of the first organic solvent cleaning comprises: The thin wafer B is soaked in N-methylpyrrolidone for 4-6 minutes.
4. The method for cleaning a thin wafer according to claim 3, wherein: The step of the second organic solvent cleaning comprises: The thin wafer B is soaked in isopropyl alcohol for 2-4 minutes.
5. The method for cleaning a thin wafer according to claim 1, wherein: The first overflow water washing step includes: using deionized water to perform overflow washing on the thin wafer B, each time for 0.5 min to 1.5 min, and repeating 2 to 4 times.
6. The method for cleaning a thin wafer according to claim 1, wherein: The second overflow water washing step includes: using deionized water to perform overflow washing on the thin wafer C, each time for 0.5 min to 1.5 min, and repeating 2 to 4 times.
7. The method for cleaning a thin wafer according to claim 1, wherein: The pickling step includes: soaking the thin wafer C in a sulfuric acid aqueous solution with a mass fraction of 1% to 3% for 40s to 50s.
8. The method for cleaning a thin wafer according to claim 1, wherein: The step of first drying comprises: Nitrogen is introduced into the drying device and preheated to 100° C. After maintaining the temperature stable for 5-10 minutes, the thin wafer D is transferred to the drying device for drying. The drying time does not exceed 10 minutes.
9. A semiconductor product, characterized in that A wafer prepared by the thin wafer cleaning method according to any one of claims 1 to 8.
10. A semiconductor product according to claim 9, characterized in that: The semiconductor product is prepared within 20 minutes after the first drying is completed.