Method for preparing high-conductivity metal material by regulating graphene / copper through metal element interface

Abstract

The invention relates to a method for preparing a high-conductivity metal material by regulating graphene / copper through a metal element interface, which comprises the following steps of: S1, depositing graphene on the surface of a copper film by using a chemical vapor deposition method to prepare a graphene / copper material; s2, depositing a metal film on the graphene / copper material in the step S1; and S3, the material obtained in the step S2 is subjected to heat treatment, so that the metal film is combined with the graphene / copper interface, and the high-conductivity graphene / copper metal material is prepared. According to the preparation method, the problems that the interface wettability of graphene and copper is poor and the binding property is weak are effectively solved, and the obtained graphene / copper alloy material shows excellent conductivity.

Description

Technical Field

[0001] The present invention belongs to the field of high-conductivity materials, and in particular relates to a method for preparing a high-conductivity metal material by regulating the interface of metal elements into graphene / copper. Background Art

[0002] With the advancement of science and technology, the demand for highly conductive materials continues to grow. The development of highly conductive copper materials will help meet market demand and promote the development of related industries, thereby creating more economic value and social benefits. Currently, research on ultra-high conductive copper materials has made some progress, but due to problems such as unstable preparation processes and performance, these materials are still difficult to apply in practice. Among all existing ultra-high conductive material systems, graphene-enhanced copper-based composites are the most promising for achieving ultra-high conductivity. However, in previous examples, the conductivity enhancement of copper by graphene was limited. The reason is that the interface wettability between graphene and copper is poor, making it difficult to fully utilize the high carrier mobility performance of graphene. Summary of the Invention

[0003] The purpose of the present invention is to provide a method for preparing a highly conductive metal material by regulating the interface of graphene / copper by metal elements, namely, using a metal with good contact properties with graphene as a regulating material, introducing the regulating metal into the graphene / copper material in a trace amount in the form of physical vapor deposition (PVD), and regulating the graphene / copper interface properties by annealing, thereby obtaining a highly conductive graphene / copper material, effectively solving the technical problems of poor interface wettability and weak bonding between graphene and copper.

[0004] The present invention provides a method for preparing a highly conductive metal material by regulating the interface of graphene / copper by metal elements, comprising the following steps:

[0005] S1. Depositing graphene on the surface of a copper film using chemical vapor deposition to produce a graphene / copper material;

[0006] S2. depositing a metal film on the graphene / copper material in step S1;

[0007] S3. Heat-treating the material obtained in step S2 to combine the metal film with the graphene / copper interface to obtain a highly conductive graphene / copper metal material.

[0008] More preferably, the copper film has a thickness of 500 nm to 5 μm.

[0009] Preferably, the deposition method in step S2 includes one of electron beam evaporation coating, magnetron sputtering coating or thermal evaporation.

[0010] More preferably, the deposition rate of copper in the electron beam evaporation coating process is 0.2 to 50 nm / s; the deposition rate of copper in the magnetron sputtering coating process is 2 to 100 nm / s; and the deposition rate of copper in the thermal evaporation process is 1 to 10 nm / s.

[0011] Preferably, the metal film in step S2 includes one or more of Ti, Ni, Co, and Cr.

[0012] More preferably, the metal film is Ti.

[0013] Preferably, the deposition thickness of the metal film in step S2 is 1-5 nm.

[0014] Preferably, the heat treatment temperature in step S3 is 600-800° C., and the heat treatment time is 30-60 min.

[0015] Beneficial effects

[0016] (1) The present invention uses a metal that has good contact properties with graphene as a regulating material to regulate the interface of the graphene / copper material. The metal film can form a chemical bond between graphene and copper, enhance the combination of graphene and metallic copper, and form more conductive channels.

[0017] (2) In the present invention, metal atoms as an intermediate layer can adjust the Fermi level matching between graphene and copper, reducing the scattering of electrons when crossing the interface.

[0018] (3) The present invention effectively solves the problems of poor wettability and weak bonding between graphene and copper, and the resulting graphene / copper alloy material exhibits excellent conductive properties. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a macroscopic image of the highly conductive graphene / copper metal material in Example 1 of the present invention.

[0020] Figure 2 This is a scanning electron microscope image of the highly conductive graphene / copper metal material in Example 1 of the present invention.

[0021] Figure 3 This is a Raman spectrum of the highly conductive graphene / copper metal material in Example 1 of the present invention. DETAILED DESCRIPTION

[0022] Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiments are only used to illustrate the present invention and are not used in limiting the scope of the present invention.In addition, should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall equally within the scope limited by the appended claims of the application.

[0023] Example 1

[0024] In this embodiment, the method for preparing a highly conductive metal material by regulating the interface of metal elements in graphene / copper comprises the following steps:

[0025] S1. A copper film with a thickness of 800 nm was selected as a graphene growth substrate and placed in a horizontal furnace for 60 minutes at 1050°C in an atmosphere of 500 sccm of argon, 20 sccm of hydrogen, and 5 sccm of high-purity methane. A continuous, high-quality graphene layer was deposited on the copper film, producing a graphene / copper material.

[0026] S2. A Ti film having a thickness of 2 nm is deposited on the graphene / copper material obtained in step S1 using an electron beam evaporation coating process;

[0027] S3. The material obtained in step S2 is heat treated at 800° C. for 30 min, and then cooled to room temperature to obtain a highly conductive graphene / copper metal material.

[0028] Figure 1 This is a macroscopic image of the highly conductive graphene / copper metal material, with a smooth surface. Figure 2 This is a scanning electron microscope image, showing that the surface of the material is smooth; Figure 3 This is a Raman spectrum diagram. The graphene signal is obvious in the figure, with a weak D peak, indicating that the metal atoms break the combination of graphene carbon-carbon bonds and act as an intermediate bridge.

[0029] Example 2

[0030] The preparation method of the highly conductive graphene / copper metal material in this embodiment refers to that in Example 1, except that the thickness of the Ti film in step S2 is 5 nm.

[0031] Example 3

[0032] The preparation method of the highly conductive graphene / copper metal material in this embodiment refers to that in Example 1, except that in step S2, Ti is replaced by Ni, and the deposition thickness is 5 nm.

[0033] Comparative Example 1

[0034] In this comparative example, a graphene / copper alloy material was prepared by referring to the steps of Example 1, except that no other metal elements were deposited.

[0035] The electrical conductivity of the highly conductive graphene / copper metal materials prepared in Examples 1 to 3 can be determined by the four-probe method and the step profiler. The results are shown in Table 1. The electrical conductivity of the graphene / copper metal material prepared by regulating the metal element interface can reach 115.26% IACS.

[0036] Table 1 Electrical conductivity of graphene / copper metal materials prepared in Examples 1 to 3 and Comparative Example 1

[0037] Material samples Example 1 Example 2 Example 3 Comparative Example 1 Conductivity (%IACS) 115.26 112.37 104.37 101.5

Claims

1. A method for preparing a highly conductive metal material by regulating the interface of graphene / copper by metal elements, comprising the following steps: S1. Depositing graphene on the surface of a copper film using chemical vapor deposition to produce a graphene / copper material; S2. depositing a metal film on the graphene / copper material in step S1; S3. Heat-treating the material obtained in step S2 to combine the metal film with the graphene / copper interface to obtain a highly conductive graphene / copper metal material.

2. The method for preparing highly conductive metal materials by regulating the interface of metal elements in graphene / copper according to claim 1, characterized in that: The thickness of the copper film in step S1 is 500 nm to 5 μm.

3. The method for preparing highly conductive metal materials by regulating the interface of metal elements in graphene / copper according to claim 1, characterized in that: The deposition method in step S2 includes one of electron beam evaporation coating, magnetron sputtering coating or thermal evaporation.

4. The method for preparing highly conductive metal materials by regulating the interface of metal elements in graphene / copper according to claim 3, characterized in that: The deposition rate of copper in the electron beam evaporation coating process is 0.2 to 50 nm / s; the deposition rate of copper in the magnetron sputtering coating process is 2 to 100 nm / s; and the deposition rate of copper in the thermal evaporation process is 1 to 10 nm / s.

5. The method for preparing highly conductive metal materials by regulating the interface of metal elements in graphene / copper according to claim 1, characterized in that: The metal film in step S2 includes one or more of Ti, Ni, Co, and Cr.

6. The method for preparing highly conductive metal materials by regulating the interface of metal elements in graphene / copper according to claim 5, characterized in that: The metal film is Ti.

7. The method for preparing highly conductive metal materials by regulating the interface of metal elements in graphene / copper according to claim 1, characterized in that: The thickness of the metal film in step S2 is 1 to 5 nm.

8. The method for preparing highly conductive metal materials by regulating the interface of metal elements in graphene / copper according to claim 1, characterized in that: The heat treatment temperature in step S3 is 600-800° C., and the heat treatment time is 30-60 minutes.

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