GaInSb wafer processing device and operation method thereof

Abstract

The invention relates to the technical field of semiconductor wafer processing, and discloses a GaInSb wafer processing device and an operation method thereof.The GaInSb wafer processing device comprises a reduction bin and an oxidation bin, heating assemblies are fixedly connected to the interiors of the reduction bin and the oxidation bin correspondingly, sealing shells are slidably connected to the upper ends of the reduction bin and the oxidation bin correspondingly, and moving bins are arranged in the middles of the reduction bin and the oxidation bin correspondingly; a wafer carrying disc is fixedly connected into the movable bin, a vacuumizing pipeline, a nitrogen pipeline and a hydrogen pipeline are fixedly connected to the top of the reduction bin, and a vacuumizing pipeline, a nitrogen pipeline and an oxygen pipeline are fixedly connected to the top of the oxidation bin. According to the GaInSb wafer processing device and the operation method thereof, the reduction step and the oxidation step of the GaInSb wafer are separated, so that the temperature in the chamber of the processing device does not need to be repeatedly adjusted, and only the reduction chamber needs to be always kept at about 500 DEG C, and the oxidation chamber needs to be always kept at about 200 DEG C, thereby not only reducing the time required for heating or cooling, but also reducing the energy consumption; and the processing efficiency of the GaInSb wafer is effectively improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer processing, in particular to a GaInSb wafer processing device and an operating method thereof. Background Art

[0002] As a ternary compound semiconductor material, GaInSb plays a crucial role in the fabrication of substrates for precision electronic components such as infrared semiconductor lasers and detectors. It demonstrates broad application potential in a wide range of fields, including infrared imaging, atmospheric environmental monitoring, advanced medical equipment, and automotive electronics. Given the crucial influence of semiconductor wafer surface quality on the performance of subsequent epitaxial functional materials, the industry currently utilizes an oxidation furnace combined with a thermal oxidation process to treat semiconductor wafers. This process aims to create a dense, high-performance oxide film on the surface, significantly improving the overall performance and reliability of the semiconductor wafer.

[0003] For example, the patent with the authorization announcement number CN110579105B discloses an oxidation furnace, which includes: a furnace chamber, which includes a process zone, an insulation zone, a combustion zone, and a heat preservation zone, which are divided from top to bottom; a process boat, which is arranged in the process zone and is used to carry the workpiece to be processed; an air inlet pipeline, which is used to transport process gas, and the air outlet of the air inlet pipeline is located in the combustion zone, and the air inlet of the air inlet pipeline extends from the bottom of the furnace chamber; an insulation structure, which is arranged in the insulation zone, and the insulation structure forms an air inlet channel in the insulation zone, so that the gas in the combustion zone can pass through and flow into the process zone; and a heat preservation structure, which is arranged in the heat preservation zone and surrounds the outer periphery of the air inlet pipeline. This oxidation furnace can save equipment space, reduce equipment costs, and improve the stability of airflow.

[0004] The above oxidation furnace still has certain defects: Currently, oxidation furnaces face a unique challenge in the processing of semiconductor wafers, particularly GaInSb wafers. GaInSb wafers undergo a complex process: first, the natural oxide film on the GaInSb wafer surface is removed in a high-temperature, hydrogen-filled environment; then, the temperature is lowered appropriately to allow the oxide film to regenerate in an oxygen atmosphere with controllable thickness and uniformity. This process is constrained by large temperature fluctuations, leading to a batch-based approach for most operations, which undoubtedly limits further improvements in production efficiency. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the present invention provides a GaInSb wafer processing device and an operating method thereof, which makes it more convenient to oxidize GaInSb wafers and easier to mass produce GaInSb wafers.

[0006] To achieve the above-mentioned objectives, the present invention provides the following technical solutions: a GaInSb wafer processing device and an operating method thereof, comprising a reduction chamber and an oxidation chamber, wherein the interiors of the reduction chamber and the oxidation chamber are fixedly connected with heating components, the upper ends of the reduction chamber and the oxidation chamber are slidably connected with a sealed shell, the middle positions of the reduction chamber and the oxidation chamber are each provided with a mobile chamber, the interiors of the mobile chamber are fixedly connected with a wafer carrier, the top of the reduction chamber is fixedly connected with a vacuum pipe, a nitrogen pipe and a hydrogen pipe, the top of the oxidation chamber is fixedly connected with a vacuum pipe, a nitrogen pipe and an oxygen pipe, the outer walls of the reduction chamber and the oxidation chamber are fixedly connected with a sealed shell, the interior of the sealed shell is rotatably connected with a turntable, the outer side of the turntable is provided with five equidistant mounting slots, the mounting slots match the mobile chamber, a motor is fixedly connected to the middle position of the bottom of the sealed shell, the output end of the motor is fixedly connected to the turntable, the top of the sealed shell is fixedly connected with a lifting assembly, and the mounting slot position of the turntable is slidably connected with a mounting assembly matching the mobile chamber.

[0007] Furthermore, the lifting assembly includes a cylinder, a connecting frame and a partition, the bottom of the cylinder is fixedly connected to the top of the sealed shell, the output end of the cylinder is fixedly connected to the connecting frame, the partition is fixedly connected to the bottom of the connecting frame, and the sealed shell is fixedly connected to the end of the connecting frame.

[0008] Furthermore, the mounting assembly includes a side plate, a mounting block, a hook block, a positioning column, a placement plate and an elastic member. A placement groove is provided on the inner wall of the mounting groove of the turntable. The inside of the placement groove is slidably connected with a hook block. The end of the hook block is fixedly connected to the mounting block. The top of the hook block is fixedly connected to the positioning column. The upper end of the positioning column is slidably connected to the placement plate. The lower end of the positioning column is sleeved with an elastic member. One end of the elastic member is fixed to the placement plate, and the other end of the elastic member is fixed to the hook block. The outer wall of the mobile warehouse is fixedly connected with a side plate, and the side plate is slidably connected to the positioning column.

[0009] Furthermore, a support leg is fixed to the bottom of the sealed shell, a movable support plate is slidably connected to one side of the sealed shell, the movable support plate and the inner wall of the sealed shell are fixed to a limiting block, and the outer walls of the turntable and the mounting block are provided with a limiting groove, and the limiting groove matches the limiting block.

[0010] Furthermore, a roller is fixed to the bottom of the movable support plate, a connecting plate is fixed to the lower end of the movable support plate close to the sealed shell, a slide groove is provided on the top of the connecting plate, a slide rail matching the slide groove is fixed to the bottom of the sealed shell, and two sets of anti-slip blocks are fixed to the side of the bottom of the sealed shell close to the movable support plate, and the anti-slip blocks match the connecting plate.

[0011] Furthermore, an air guide channel is fixedly connected to the side of the outer wall of the closed shell close to the oxidation bin, and a fan fixed to the closed shell is provided at one end of the air guide channel close to the movable support plate. An air outlet filter is provided on the side of the movable support plate close to the reduction bin, and the air outlet filter is fixed to the closed shell. An air inlet filter assembly is fixedly connected to the bottom of the closed shell close to the movable support plate.

[0012] A method for operating an intelligent detection device for dangerous gases comprises the following steps: Step 1: Pull out the mobile warehouse through the movable support plate, then place the GaInSb wafer in the wafer carrier, and then push the movable support plate back to its original position so that the mobile warehouse is in the installation slot of the turntable. Then start the motor and drive the turntable to rotate intermittently through the motor (the waiting interval after each rotation is about 40 minutes. This period of time is used for vacuuming, inflating, and waiting for the reduction or oxidation reaction of the GaInSb wafer to be completed). Each time the motor is started, the turntable will rotate 72°, allowing the mobile warehouse to move from the previous station to the next station. Before the motor is started, the lifting assembly will drive the sealing shell and partition to rise. When the motor stops, the lifting assembly will drive the sealing shell and partition to fall.

[0013] Step 2: When the mobile chamber is in the restoration chamber position, the interior of the restoration chamber is evacuated by an external vacuum unit connected to the vacuum pipe. When the vacuum degree of the vacuum chamber reaches 1×10 -4 Pa, stop pumping, and fill the reduction chamber with hydrogen and nitrogen through the nitrogen pipeline and hydrogen pipeline. The volume ratio of hydrogen to nitrogen is (1-2):10. Wait until the vacuum degree of the vacuum chamber drops to (1-10)×10 -2 Pa, stop charging, turn on the heating component in the reduction chamber to heat the temperature to 450℃-500℃, and keep the temperature constant for 30 minutes.

[0014] Step 3: When the mobile chamber is in the oxidation chamber position, the interior of the oxidation chamber is evacuated by an external vacuum unit connected to the vacuum pipe. When the vacuum degree of the vacuum chamber reaches 1×10 -4 Pa, stop pumping, and fill the reduction chamber with oxygen and nitrogen through the nitrogen pipeline and oxygen pipeline. The volume ratio of oxygen to nitrogen is (1-2):10. Wait until the vacuum degree of the vacuum chamber drops to (1-10)×10 -2 Pa, stop charging, turn on the heating component in the oxidation chamber to heat the temperature to 150℃-200℃, and keep the temperature constant for 10-20 minutes.

[0015] Step 4: Before the lifting assembly drives the sealed shell to move upward, the reduction chamber and the oxidation chamber are vacuumed by an external vacuum unit connected to the vacuum pipe, and the vacuum degree in the reduction chamber and the oxidation chamber is pumped to 1×10 -4When the pressure drops below 0 Pa, stop pumping; then fill the reduction chamber and oxidation chamber with nitrogen through the nitrogen pipeline until the pressure drops to 0 Pa.

[0016] Step 5: When the mobile bin rotates to the position of the movable support plate again, pull out the movable support plate, and use the movable support plate to drive the mobile bin out of the sealed shell. Finally, take out the GaInSb wafer with an oxide layer formed, and place the unoxidized GaInSb wafer in the mobile bin. Then push the movable support plate back to its original position, so that the mobile bin is in the installation slot of the turntable, and repeat the above steps.

[0017] Compared with the prior art, the present invention has the following beneficial effects: 1. This GaInSb wafer processing device and its operating method separate the reduction and oxidation steps of the GaInSb wafer. This eliminates the need to repeatedly adjust the temperature in the chamber of the processing device. Instead, the reduction chamber only needs to be kept at approximately 500°C and the oxidation chamber at approximately 200°C. This reduces the time required for heating or cooling, reduces energy consumption, and effectively improves the processing efficiency of the GaInSb wafer.

[0018] 2. In this GaInSb wafer processing device and operation method thereof, a fan will blow away the heat emitted by the GaInSb wafer (just transferred out of the oxidation chamber), thereby achieving an air-cooling effect, and the blown-away (lower temperature) airflow will enter the previous workstation of the oxidation chamber through the air guide channel, thereby cooling the GaInSb wafer that will enter the oxidation chamber. At the same time, the heated airflow will flow to the previous workstation of the reduction chamber to preheat the GaInSb wafer that will enter the reduction chamber.

[0019] 3. In this GaInSb wafer processing device and operating method thereof, the mounting assembly is slidably connected to the turntable, making it easy to remove the mounting assembly from the turntable for maintenance and repair. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic structural diagram of the present invention as a whole; Figure 2 This is a bottom view of the structure of the present invention when the movable support plate is opened as a whole; Figure 3 It is a partial cross-sectional view of the present invention when the movable support plate is opened as a whole; Figure 4 For the present invention Figure 3 Schematic diagram of the local enlarged structure at A in the middle; Figure 5 This is a schematic structural diagram of the reduction bin of the present invention; Figure 6 This is a schematic diagram of the connection structure of the sealed shell, the exchange chamber and the oxidation chamber of the present invention; Figure 7 For the present invention Figure 6 Schematic diagram of the local enlarged structure at B in the middle; Figure 8 This is a schematic diagram of the connection structure between the mobile bin and the turntable of the present invention; Figure 9 It is a structural schematic diagram of the turntable of the present invention; Figure 10 This is a schematic diagram of the connection structure between the mounting block and the movable support plate of the present invention; Figure 11 It is a structural schematic diagram of the installation block of the present invention; Figure 12 It is a structural schematic diagram of the mobile warehouse of the present invention.

[0021] In the figure: 1. Reduction chamber; 2. Oxidation chamber; 3. Sealed shell; 4. Sealed shell; 5. Support leg; 6. Cylinder; 7. Connecting frame; 8. Vacuum pipe; 9. Nitrogen pipe; 10. Hydrogen pipe; 11. Oxygen pipe; 12. Motor; 13. Turntable; 14. Limiting groove; 15. Placement groove; 16. Limiting block; 17. Mobile chamber; 18. Wafer carrier; 19. Side panel; 20. Mounting block; 21. Hooking block; 22. Positioning column; 23. Placement plate; 24. Elastic member; 25. Movable support plate; 26. Roller; 27. Connecting plate; 28. Slide groove; 29. ​​Slide rail; 30. Anti-slip block; 31. Fan; 32. Air guide channel; 33. Air outlet filter; 34. Air inlet filter assembly; 35. Partition. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0023] See also Figures 1 to 12A GaInSb wafer processing device includes a reduction chamber 1 and an oxidation chamber 2. The interiors of the reduction chamber 1 and the oxidation chamber 2 are fixedly connected with heating components. The upper ends of the reduction chamber 1 and the oxidation chamber 2 are slidably connected with a sealed shell 3. A mobile chamber 17 is provided in the middle of the reduction chamber 1 and the oxidation chamber 2. A wafer carrier 18 is fixedly connected to the interior of the mobile chamber 17. The top of the reduction chamber 1 is fixedly connected with a vacuum pipe 8, a nitrogen pipe 9 and a hydrogen pipe 10. The top of the oxidation chamber 2 is fixedly connected with a vacuum pipe 8, a nitrogen pipe 9 and a hydrogen pipe 10. The pipeline 9 and the oxygen pipeline 11, the outer walls of the reduction chamber 1 and the oxidation chamber 2 are all fixedly connected to the closed shell 4, and the interior of the closed shell 4 is rotatably connected to the turntable 13. Five equidistant mounting grooves are provided on the outside of the turntable 13, and the mounting grooves match the mobile chamber 17. A motor 12 is fixedly connected to the middle position of the bottom of the closed shell 4, and the output end of the motor 12 is fixedly connected to the turntable 13. A lifting assembly is fixedly connected to the top of the closed shell 4, and the mounting groove position of the turntable 13 is slidably connected to a mounting assembly matching the mobile chamber 17.

[0024] In the GaInSb wafer processing device of the present invention, the mounting groove indicated by the arrow of the turntable 13 is the No. 1 station (such as Figure 3 、 Figure 8 and Figure 9As shown in the figure), with the No. 1 station as the starting point, the No. 2 station, the No. 3 station, the No. 4 station and the No. 5 station are distributed in a clockwise direction. The No. 1 station serves as a loading and unloading station, the No. 2 station serves as a preheating station, the No. 3 station serves as a reducing station, the No. 4 station serves as a cooling station, and the No. 5 station serves as an oxidizing station. When oxidizing the GaInSb wafer, the movable chamber 17 of the No. 1 station is first pulled out, and then the GaInSb wafer is placed on the wafer carrier 18, and then the movable chamber 17 is reinserted. The turntable 13 is then driven by the motor 12 to rotate intermittently (each time the turntable 13 rotates 72 degrees, that is, one station, the interval between two rotations is about 40 minutes), so that the GaInSb wafer passes through the second station, the third station, the fourth station and the fifth station in turn, and finally returns to the first station. When the GaInSb wafer passes through the second station, the third station, the fourth station and the fifth station, the GaInSb wafer will be preheated first, and then enter the reduction chamber 1 for reduction. The original reaction is then moved from the reduction chamber 1 to the fourth station for static cooling. After cooling to a certain temperature, it will enter the oxidation chamber 2 for oxidation, so that an oxide film with controllable thickness and uniformity is formed on the surface of the GaInSb wafer. After the oxidation is completed, it will re-enter the No. 1 station to facilitate loading and unloading. Since the reduction and oxidation steps of the GaInSb wafer are respectively in the reduction chamber 1 and the oxidation chamber 2, the temperatures inside the reduction chamber 1 and the oxidation chamber 2 do not need to be repeatedly adjusted. It is only necessary to keep the reduction chamber 1 at about 500°C and the oxidation chamber 2 at about 200°C. This not only reduces the waiting time required for heating or cooling the entire device, but also reduces energy consumption, effectively improves the processing efficiency of the GaInSb wafer, and makes it easier to mass-produce GaInSb wafers using the device. In addition, the structures of the reduction chamber 1 and the oxidation chamber 2 in the present invention are similar to the structure of an oxidation furnace disclosed in the prior art, patent authorization announcement number CN110579105B, so no further elaboration is made here.

[0025] As a preferred technical solution of the present invention, the lifting assembly includes a cylinder 6, a connecting frame 7 and a partition 35. The bottom of the cylinder 6 is fixedly connected to the top of the sealed shell 4, the output end of the cylinder 6 is fixedly connected to the connecting frame 7, the partition 35 is fixedly connected to the bottom of the connecting frame 7, and the sealed shell 3 is fixedly connected to the end of the connecting frame 7.

[0026] Specifically, the partition 35 and the sealed shell 3 can both play a certain role in thermal insulation, avoiding the mutual influence of temperature between the reduction chamber 1 or the oxidation chamber 2 and other workstations, and before the turntable 13 rotates, in order to avoid the partition 35 and the sealed shell 3 from colliding with the mobile chamber 17, causing damage to the entire device, the cylinder 6 will be started, and the partition 35 and the sealed shell 3 will be driven upward by the cylinder 6. After the turntable 13 stops rotating, the cylinder 6 will drive the partition 35 and the sealed shell 3 to move down back to their original position, and play the role of temperature isolation again.

[0027] As a preferred technical solution of the present invention, the installation assembly includes a side panel 19, a mounting block 20, a hook block 21, a positioning column 22, a placement plate 23 and an elastic member 24. A placement slot 15 is provided on the inner wall of the installation slot of the turntable 13. The inside of the placement slot 15 is slidably connected with a hook block 21. The end of the hook block 21 is fixedly connected to the mounting block 20. The top of the hook block 21 is fixedly connected to the positioning column 22. The upper end of the positioning column 22 is slidably connected to the placement plate 23. The lower end of the positioning column 22 is sleeved with an elastic member 24. One end of the elastic member 24 is fixedly connected to the placement plate 23, and the other end of the elastic member 24 is fixedly connected to the hook block 21. The outer wall of the mobile warehouse 17 is fixedly connected to the side panel 19, and the side panel 19 is slidably connected to the positioning column 22.

[0028] Specifically, when installing the mobile warehouse 17 on the turntable 13, it is only necessary to align the side panel 19 with the positioning column 22, then place the side panel 19 on the positioning column 22, insert the positioning column 22 into the side panel 19, then loosen the mobile warehouse 17, and push the mounting block 20 so that the hook block 21 fixed on the side wall of the mounting block 20 is inserted into the placement groove 15; and when removing the mobile warehouse 17, it is only necessary to pull the mounting block 20 out of the turntable 13 so that the mobile warehouse 17 is staggered with the sealed shell 4, and then remove the mobile warehouse 17 from the positioning column 22. The whole process is simple, convenient and easy to operate.

[0029] As a preferred technical solution of the present invention, a support leg 5 is fixed to the bottom of the sealed shell 4, a movable support plate 25 is slidably connected to one side of the sealed shell 4, the movable support plate 25 and the inner wall of the sealed shell 4 are fixed to the limiting block 16, and the outer walls of the turntable 13 and the mounting block 20 are provided with a limiting groove 14, and the limiting groove 14 matches the limiting block 16.

[0030] Specifically, since the outer walls of the turntable 13 and the mounting block 20 are provided with limiting grooves 14, when the turntable 13 rotates, the limiting block 16 can always limit the turntable 13 and the mounting block 20, thereby preventing the mounting block 20 and the turntable 13 from being misaligned, resulting in a collision between the mobile bin 17 and the sealed shell 4; in addition, when the movable support plate 25 is pushed away from the sealed shell 4, the limiting block 16 fixed on the movable support plate 25 will also drive the mounting block 20 to move away from the sealed shell 4, thereby facilitating the removal of the mobile bin 17 placed on the mounting block 20 from the sealed shell 4.

[0031] As a preferred technical solution of the present invention, a roller 26 is fixed to the bottom of the movable support plate 25, a connecting plate 27 is fixed to the lower end of the movable support plate 25 close to the closed shell 4, a slide groove 28 is provided on the top of the connecting plate 27, and a slide rail 29 matching the slide groove 28 is fixed to the bottom of the closed shell 4. Two sets of anti-slip blocks 30 are fixed to the side of the bottom of the closed shell 4 close to the movable support plate 25, and the anti-slip blocks 30 match the connecting plate 27.

[0032] Specifically, the movable support plate 25 is restricted by the slide rail 29 and the slide groove 28, so that the movable support plate 25 can only move along the direction of the slide rail 29, which makes it easier for the hook block 21 on the mounting block 20 to detach from the placement groove 15, and the anti-detachment block 30 will restrict the connecting plate 27 to prevent the movable support plate 25 from detaching from the sealed shell 4. At the same time, the position indicated by the arrow on the turntable 13 is the position of the movable support plate 25, that is, the No. 1 work station refers to the mounting groove on the side of the turntable 13 close to the movable support plate 25; in addition, it is worth noting that: there is a fixing mechanism between the movable support plate 25 and the sealed shell 4 (not shown in the figure), and the fixing mechanism has a certain sealing effect. Since the fixing mechanism with a sealing effect is an existing mature product, it will not be elaborated on here.

[0033] As a preferred technical solution of the present invention, an air guide channel 32 is fixedly connected to the side of the outer wall of the closed shell 4 close to the oxidation bin 2, and a fan 31 fixed to the closed shell 4 is provided at one end of the air guide channel 32 close to the movable support plate 25. An air outlet filter 33 is provided on the side of the movable support plate 25 close to the reduction bin 1. The air outlet filter 33 is fixed to the closed shell 4, and an air inlet filter assembly 34 is fixedly connected to the side of the bottom of the closed shell 4 close to the movable support plate 25.

[0034] Specifically, since station No. 1 is a station for loading and unloading materials, and since the GaInSb wafer still has a relatively high temperature (about 200°C) when it is just transferred out of the oxidation chamber 2, it needs to stay at station No. 1 for a period of time, waiting for the GaInSb wafer to drop to a certain temperature before being taken out. During the waiting process, the fan 31 will blow the gas in station No. 1 to station No. 4. This part of the gas with a temperature lower than the temperature of the GaInSb wafer in station No. 4 will take away the heat emitted by the GaInSb wafer in station No. 4, so that the temperature of the GaInSb wafer in station No. 4 will be reduced. At the same time, the gas that absorbs heat will enter station No. 2, thereby preheating the GaInSb wafer in station No. 2. At the same time, a plurality of air holes are provided on the wafer carrier 18 to facilitate gas flow. The air entering station No. 1 is filtered through the air inlet filter assembly 34 to prevent impurities from entering and causing contamination of the GaInSb wafer. In addition, since the air inlet filter assembly 34 is an existing mature product, it will not be elaborated on here.

[0035] The operating method of a GaInSb wafer processing device of the present invention is as follows: Step 1: Pull out the mobile warehouse 17 through the movable support plate 25, then place the GaInSb wafer in the wafer carrier 18, and then push the movable support plate 25 back to its original position so that the mobile warehouse 17 is in the installation groove of the turntable 13, and then start the motor 12, and drive the turntable 13 to rotate intermittently through the motor 12 (the waiting interval after each rotation is about 40 minutes. This time period is used for vacuuming, inflating, and waiting for the reduction or oxidation reaction of the GaInSb wafer to be completed). Each time the motor 12 is started, it will drive the turntable 13 to rotate 72°, allowing the mobile warehouse 17 to move from the previous station to the next station. Before the motor 12 is started, the lifting assembly will drive the sealed shell 3 and the partition 35 to rise. When the motor 12 stops, the lifting assembly will drive the sealed shell 3 and the partition 35 to fall.

[0036] Step 2: When the mobile chamber 17 is at the position of the reduction chamber 1, the interior of the reduction chamber 1 is evacuated by the external vacuum unit connected to the vacuum pipe 8. When the vacuum degree of the vacuum chamber reaches 1×10 -4 Pa, stop pumping, and fill the reduction chamber 1 with hydrogen and nitrogen through the nitrogen pipe 9 and the hydrogen pipe 10. The volume ratio of hydrogen to nitrogen is (1-2):10. Wait until the vacuum degree of the vacuum chamber drops to (1-10)×10 -2 Pa, stop charging, turn on the heating component in the reduction chamber 1 to heat the temperature to 450℃-500℃, and keep the temperature constant for 30 minutes.

[0037] Step 3: When the mobile chamber 17 is at the oxidation chamber 2 position, the interior of the oxidation chamber 2 is evacuated by an external vacuum unit connected to the vacuum pipe 8. When the vacuum degree of the vacuum chamber reaches 1×10 -4 Pa, stop pumping, and fill the reduction chamber 1 with oxygen and nitrogen through the nitrogen pipe 9 and the oxygen pipe 11. The volume ratio of oxygen to nitrogen is (1-2):10. Wait until the vacuum degree of the vacuum chamber drops to (1-10)×10 -2 Pa, stop charging, turn on the heating component in the oxidation chamber 2 to heat the temperature to 150℃-200℃, and keep the temperature constant for 10-20 minutes.

[0038] Step 4: Before the lifting assembly drives the sealed shell 3 to move upward, the reduction chamber 1 and the oxidation chamber 2 are vacuumed by the external vacuum unit connected to the vacuum pipe 8, and the vacuum degree in the reduction chamber 1 and the oxidation chamber 2 is pumped to 1×10 -4 Then, nitrogen is filled into the reduction chamber 1 and the oxidation chamber 2 through the nitrogen pipeline 9 until it reaches 0Pa.

[0039] Step 5: When the movable chamber 17 rotates to the position of the movable support plate 25 again, the movable support plate 25 is pulled out, and the movable chamber 17 is driven by the movable support plate 25 to move out of the sealed shell 4. Finally, the GaInSb wafer with an oxide layer formed is taken out, and the GaInSb wafer that has not been oxidized is placed in the movable chamber 17, and then the movable support plate 25 is pushed back to its original position, so that the movable chamber 17 is in the installation groove of the turntable 13, and the above steps are repeated.

[0040] Working principle: When oxidizing the GaInSb wafer, first pull out the mobile warehouse 17 of the No. 1 station, then place the GaInSb wafer on the wafer carrier 18 of the mobile warehouse 17, then reinsert the mobile warehouse 17 of the No. 1 station onto the turntable 13, and then start the motor 12, and drive the turntable 13 to rotate intermittently through the motor 12 (the waiting interval after each rotation is about 40 minutes. This period of time is mainly used to vacuum and inflate the reduction warehouse 1 of the No. 3 station and the oxidation warehouse 2 of the No. 5 station, and to wait for the GaInSb wafers in the reduction warehouse 1 of the No. 3 station and the oxidation warehouse 2 of the No. 5 station to undergo reduction or oxidation reaction). When the GaInSb wafer rotates to the No. 2 station, it will be preheated by the hot air flow from the No. 4 station. When the GaInSb wafer rotates to the No. 3 station, the reduction warehouse 1 will be vacuumed first, and then hydrogen and nitrogen will be introduced, thereby allowing the GaInSb wafer to undergo oxidation reaction. A reduction reaction occurs to remove the natural oxide film on the surface of the GaInSb wafer. When the GaInSb wafer rotates to the fourth station, the air flow blown from the first station will cool the GaInSb wafer. When the GaInSb wafer rotates to the fifth station, the oxidation chamber 2 will be evacuated first, and then oxygen and nitrogen will be introduced to cause an oxidation reaction on the GaInSb wafer, so that the GaInSb wafer will form an oxide film with controllable thickness and uniformity, thereby improving the material performance. Finally, the GaInSb wafer will return to the first station, and after cooling for a certain period of time, it will be taken out, and a new GaInSb wafer will be placed in the mobile chamber 17. Since all stations work synchronously and the temperatures in the reduction chamber 1 and the oxidation chamber 2 do not need to be adjusted on a large scale, the efficiency of the GaInSb wafer in generating the oxide film is higher, which is convenient for mass production of GaInSb wafers.

[0041] It is worth noting that after the reduction or oxidation of the GaInSb wafer is completed, the reduction chamber 1 or the oxidation chamber 2 will be evacuated again and filled with nitrogen to protect the GaInSb wafer. Therefore, even if the reduction chamber 1 and the oxidation chamber 2 are briefly connected during the rotation of the turntable 13 driving the GaInSb wafer, the GaInSb wafer will not be affected.

[0042] While the embodiments of the present invention have been shown and described, it will be apparent to those skilled in the art that various changes, modifications, substitutions, and alterations can be made to the embodiments without departing from the principles and spirit of the invention.

Claims

1. A GaInSb wafer processing device, characterized in that: The invention comprises a reduction chamber (1) and an oxidation chamber (2), wherein the interiors of the reduction chamber (1) and the oxidation chamber (2) are fixedly connected with a heating assembly, the upper ends of the reduction chamber (1) and the oxidation chamber (2) are slidably connected with a sealing shell (3), a mobile chamber (17) is provided in the middle of the reduction chamber (1) and the oxidation chamber (2), the interior of the mobile chamber (17) is fixedly connected with a wafer carrier (18), the top of the reduction chamber (1) is fixedly connected with a vacuum pipe (8), a nitrogen pipe (9) and a hydrogen pipe (10), the top of the oxidation chamber (2) is fixedly connected with a vacuum pipe (8), a nitrogen pipe (9) and an oxygen pipe (11), and the upper ends of the reduction chamber (1) are fixedly connected with a vacuum pipe (8), a nitrogen pipe (9) and an oxygen pipe (12). The pipeline (11) is provided. The outer walls of the reduction chamber (1) and the oxidation chamber (2) are fixedly connected to a closed shell (4). The closed shell (4) is internally rotatably connected to a turntable (13). Five equally spaced mounting grooves are provided on the outer side of the turntable (13). The mounting grooves match the movable chamber (17). A motor (12) is fixedly connected to the middle position of the bottom of the closed shell (4). The output end of the motor (12) is fixedly connected to the turntable (13). A lifting component is fixedly connected to the top of the closed shell (4). The mounting groove position of the turntable (13) is slidably connected to a mounting component matching the movable chamber (17).

2. A GaInSb wafer processing device according to claim 1, characterized in that: The lifting assembly comprises a cylinder (6), a connecting frame (7) and a partition (35), the bottom of the cylinder (6) is fixedly connected to the top of the sealed shell (4), the output end of the cylinder (6) is fixedly connected to the connecting frame (7), the partition (35) is fixedly connected to the bottom of the connecting frame (7), and the sealed shell (3) is fixedly connected to the end of the connecting frame (7).

3. A GaInSb wafer processing device according to claim 1, characterized in that: The mounting assembly comprises a side plate (19), a mounting block (20), a hook block (21), a positioning column (22), a placement plate (23) and an elastic member (24); a placement groove (15) is provided on the inner wall of the mounting groove of the turntable (13); a hook block (21) is slidably connected to the interior of the placement groove (15); an end of the hook block (21) is fixedly connected to the mounting block (20); a positioning column (22) is fixedly connected to the top of the hook block (21); an upper end of the positioning column (22) is slidably connected to the placement plate (23); an elastic member (24) is sleeved on the lower end of the positioning column (22); one end of the elastic member (24) is fixedly connected to the placement plate (23); the other end of the elastic member (24) is fixedly connected to the hook block (21); a side plate (19) is fixedly connected to the outer wall of the mobile bin (17); and the side plate (19) is slidably connected to the positioning column (22).

4. A GaInSb wafer processing device according to claim 3, characterized in that: The bottom of the sealed shell (4) is fixedly connected to a support leg (5), one side of the sealed shell (4) is slidably connected to a movable support plate (25), the inner wall of the movable support plate (25) and the sealed shell (4) are fixedly connected to a limit block (16), and the outer walls of the turntable (13) and the mounting block (20) are both provided with a limit groove (14), and the limit groove (14) matches the limit block (16).

5. A GaInSb wafer processing device according to claim 4, characterized in that: The bottom of the movable support plate (25) is fixedly connected to a roller (26), the lower end of the movable support plate (25) close to the sealed shell (4) is fixedly connected to a connecting plate (27), the top of the connecting plate (27) is provided with a slide groove (28), the bottom of the sealed shell (4) is fixedly connected to a slide rail (29) matching the slide groove (28), and the bottom of the sealed shell (4) close to the movable support plate (25) is fixedly connected to two groups of anti-slip blocks (30), and the anti-slip blocks (30) match the connecting plate (27).

6. A GaInSb wafer processing device according to claim 4, characterized in that: An air guide channel (32) is fixedly connected to the side of the outer wall of the closed shell (4) close to the oxidation chamber (2), and a fan (31) fixed to the closed shell (4) is provided at one end of the air guide channel (32) close to the movable support plate (25). An air outlet filter (33) is provided on the side of the movable support plate (25) close to the reduction chamber (1), and the air outlet filter (33) is fixedly connected to the closed shell (4). An air inlet filter assembly (34) is fixedly connected to the side of the bottom of the closed shell (4) close to the movable support plate (25).

7. The method for operating a GaInSb wafer processing device according to any one of claims 1 to 6, wherein: The following steps are involved: Step 1: Pull out the movable chamber (17) through the movable support plate (25), then place the GaInSb wafer in the wafer carrier (18), and then push the movable support plate (25) back to its original position so that the movable chamber (17) is in the installation groove of the turntable (13), and then start the motor (12), and drive the turntable (13) to rotate intermittently through the motor (12) (the waiting interval after each rotation is about 40 minutes, and this time period is used for vacuuming, inflating and waiting for the reduction or oxidation reaction of the GaInSb wafer to be completed). Each time the motor (12) is started, the turntable (13) will be driven to rotate 72 degrees, so that the movable chamber (17) can move from the previous station to the next station, and before the motor (12) is started, the lifting component will drive the sealing shell (3) and the partition (35) to rise, and when the motor (12) stops, the lifting component will drive the sealing shell (3) and the partition (35) to fall; Step 2: When the mobile chamber (17) is in the position of the reduction chamber (1), the interior of the reduction chamber (1) is evacuated by an external vacuum unit connected to the vacuum pipe (8). When the vacuum degree of the vacuum chamber reaches 1×10 -4 Pa, stop pumping, and fill the reduction chamber (1) with hydrogen and nitrogen through the nitrogen pipeline (9) and the hydrogen pipeline (10). The volume ratio of hydrogen to nitrogen is (1-2):

10. Wait until the vacuum degree of the vacuum chamber drops to (1-10)×10 -2 Pa, stop charging, turn on the heating component in the reduction chamber (1) and heat the temperature to 450℃-500℃, and keep the temperature constant for 30 minutes; Step 3: When the mobile chamber (17) is at the oxidation chamber (2) position, the interior of the oxidation chamber (2) is evacuated by an external vacuum unit connected to the vacuum pipe (8). When the vacuum degree of the vacuum chamber reaches 1×10 -4 Pa, stop pumping, and fill the reduction chamber (1) with oxygen and nitrogen through the nitrogen pipe (9) and the oxygen pipe (11). The volume ratio of oxygen to nitrogen is (1-2):

10. Wait until the vacuum degree of the vacuum chamber drops to (1-10)×10 -2 Pa, stop the inflation, turn on the heating component in the oxidation chamber (2) to heat the temperature to 150°C-200°C, and keep the temperature constant for 10-20 minutes; Step 4: Before the lifting assembly drives the sealed shell (3) to move upward, the reduction chamber (1) and the oxidation chamber (2) are vacuumed by an external vacuum unit connected to the vacuum pipe (8) to reduce the vacuum degree in the reduction chamber (1) and the oxidation chamber (2) to 1×10 -4 When the pressure drops below 0 Pa, stop pumping; then fill the reduction chamber (1) and the oxidation chamber (2) with nitrogen through the nitrogen pipeline (9) until the pressure drops to 0 Pa; Step 5: When the movable chamber (17) is rotated to the position of the movable support plate (25) again, the movable support plate (25) is pulled out, and the movable chamber (17) is driven to move out of the sealed shell (4) by the movable support plate (25). Finally, the GaInSb wafer on which the oxide layer has been formed is taken out, and the GaInSb wafer that has not been oxidized is placed in the movable chamber (17), and then the movable support plate (25) is pushed back to the original position, so that the movable chamber (17) is in the installation groove of the turntable (13), and the above steps are repeated.

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