Semiconductor process chamber and bearing device thereof

Abstract

The invention discloses a semiconductor process chamber and a bearing device thereof, and belongs to the technical field of semiconductors. The bearing device comprises a base and an ejector pin, the base is provided with a wafer bearing surface and a through hole, the ejector pin is used for jacking up a wafer, the ejector pin penetrates through the through hole and can ascend and descend relative to the base so that the wafer can be located on the wafer bearing surface or separated from the wafer bearing surface, the ejector pin comprises a first pin section and a second pin section which are connected, and the top end of the first pin section is provided with a wafer contact surface. The second needle section is located below the first needle section, and at least part of the second needle section is of a heat insulation structure. The semiconductor process chamber comprises a chamber body and the bearing device, the bearing device is the bearing device, the base is arranged in the chamber body, the semiconductor process chamber further comprises a cooling device, the cooling device is arranged in the chamber body, and the cooling device is opposite to the lower end face of the ejector pin. In this way, the ejector pin is prevented from being broken in the moving process, and smooth wafer conveying and smooth proceeding of the technological process are guaranteed.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a semiconductor process chamber and a supporting device thereof. Background Art

[0002] In the field of semiconductor technology, a semiconductor process chamber usually includes a chamber body, a base and an ejector pin. The base is arranged in the chamber body, the base is used to support the wafer, and the base is provided with a through hole for the ejector pin to pass through. The ejector pin can be raised and lowered relative to the base. During the process of raising and lowering the ejector pin, the lower half of the ejector pin can be exposed from the lower end surface of the base.

[0003] In the related art, the process gas enters the chamber body and processes the wafer supported by the susceptor, and part of the process gas flows from both sides of the susceptor to the bottom of the susceptor, thereby gathering at the bottom of the susceptor. When the temperature of the ejector pin reaches the reaction condition of the process gas, the process gas tends to form a coating on the surface of the part of the ejector pin located below the susceptor. Then, when the process ends and the susceptor descends, due to the existence of the coating, the tolerance between the ejector pin and the susceptor is reduced, and the resistance of the ejector pin in the process of moving relative to the susceptor increases, and the ejector pin is prone to breakage, which leads to the failure of wafer transfer and affects the process. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a semiconductor process chamber and a supporting device thereof, which can solve the problem in the related art that the lower half of the ejector pin is easily coated and then broken.

[0005] In a first aspect, an embodiment of the present application provides a carrier device for a semiconductor process chamber, comprising a base and a ejector pin, wherein the base is provided with a wafer carrying surface and a through hole for carrying a wafer, the ejector pin is used to lift the wafer, the ejector pin passes through the through hole, and the ejector pin can be raised and lowered relative to the base to place the wafer on or off the wafer carrying surface.

[0006] The ejector pin includes a first needle segment and a second needle segment connected to each other. The top of the first needle segment is provided with a wafer contact surface. The second needle segment is located below the first needle segment. At least part of the second needle segment is a heat insulation structure.

[0007] In a second aspect, an embodiment of the present application provides a semiconductor process chamber, comprising a chamber body and a carrier, wherein the carrier is the above-mentioned carrier, and the base is disposed in the chamber body;

[0008] The semiconductor process chamber further includes a cooling device, which is disposed in the chamber body and is opposite to the lower end surface of the ejector pin.

[0009] In an embodiment of the present application, the ejector pins of the carrier device are divided into a first needle segment and a second needle segment, wherein the first needle segment is located above and the second needle segment is located below. Since both the base and the first needle segment can contact the wafer, heat can be transferred between the base and the first needle segment, and at least a portion of the second needle segment is a heat-insulating structure. The heat of the base is not easily transferred through the first needle segment to the heat-insulating structure portion of the second needle segment, that is, the temperature of at least a portion of the second needle segment is relatively low and is not easily able to reach the chemical reaction temperature. Moreover, a cooling device is provided below the ejector pin, and the cooling device is used to cool the lower half of the ejector pin, thereby reducing the temperature of the lower half of the ejector pin, making it even less likely to reach the chemical reaction temperature of the process gas.

[0010] In this way, when the process gas flows to the bottom of the base, it can, to a certain extent, prevent the process gas from forming a coating on the surface of the ejector pin, ensure the tolerance between the ejector pin and the base, and the process of the ejector pin moving relative to the base is relatively smooth, thereby avoiding the ejector pin from breaking, ensuring smooth film transfer and the smooth progress of the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a schematic diagram of the structure of a semiconductor process chamber in the prior art when a wafer is located at a process position;

[0012] Figure 2 It is a schematic structural diagram of a semiconductor process chamber in the prior art when the wafer is in the wafer transfer position;

[0013] Figure 3 It is a schematic diagram of the structure of a semiconductor process chamber when an ejector pin is broken in the prior art;

[0014] Figure 4 1 is a schematic structural diagram of a semiconductor process chamber disclosed in an embodiment of the present application when a wafer is located at a wafer transfer position;

[0015] Figure 5 It is a structural schematic diagram of the carrying device disclosed in the embodiment of the present application;

[0016] Figure 6 is an exploded view of the ejector pin disclosed in the embodiment of the present application;

[0017] Figure 7 This is a schematic diagram of the structure of the water cooling plate disclosed in the embodiment of the present application;

[0018] Figure 8 It is a schematic structural diagram of a semiconductor process chamber disclosed in an embodiment of the present application.

[0019] Description of reference numerals:

[0020] 100-chamber body, 110-bottom wall,

[0021] 200-base, 210-wafer carrying surface, 220-through hole,

[0022] 300- ejector pin, 310- first needle segment, 310a- first protrusion, 311- wafer contact surface, 320- second needle segment, 321- heat insulation, 321a- first embedding groove, 321b- second embedding groove, 322- needle segment, 322a- second protrusion,

[0023] 330-coating,

[0024] 400-water cooling plate, 410-cooling water channel, 411-water inlet, 412-water return port, 420-pressure sensitive sensor, 500-wafer,

[0025] 600-current grating,

[0026] 700-flow uniformity tooling,

[0027] 800-Intake block. DETAILED DESCRIPTION

[0028] The following will be combined with the accompanying drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0029] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0030] The semiconductor process chamber and its carrier device provided in the embodiments of the present application are described in detail below with reference to specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0031] Please refer to Figure 5 and Figure 6The carrier device disclosed in the embodiment of the present application is applied to a semiconductor process chamber. The carrier device includes a base 200 and a ejector pin 300. The base 200 provides support for a wafer 500 transferred into the semiconductor process chamber. The base 200 is provided with a wafer carrying surface 210, and the wafer carrying surface 210 is used to carry the wafer 500; the base 200 is also provided with a through hole 220, and the ejector pin 300 passes through the through hole 220. The ejector pin 300 is used to lift the wafer 500, and the ejector pin 300 can be raised and lowered relative to the base 200 to allow the wafer 500 to be located on the wafer carrying surface 210 or detached from the wafer carrying surface 210.

[0032] Optionally, both the through hole 220 and the ejector pin 300 extend in a vertical direction, and the through hole 220 passes through the base 200 .

[0033] The ejector pin 300 includes a first needle segment 310 and a second needle segment 320 connected to each other. The top of the first needle segment 310 is provided with a wafer contact surface 311, through which the first needle segment 310 can contact the bottom surface of the wafer 500. When the wafer contact surface 311 of the ejector pin 300 contacts the wafer 500, the wafer contact surface 311 can be flush with the wafer support surface 210 of the base 200. Optionally, the first needle segment 310 can have a thermally conductive structure or a non-thermal conductive structure. Furthermore, the first needle segment 310 can be made of alumina. Of course, the first needle segment 310 can also adopt other thermally conductive structures.

[0034] The second needle segment 320 is located below the first needle segment 310, that is, the first needle segment 310 is located above and the second needle segment 320 is located below. At least part of the second needle segment 320 is a heat-insulating structure. Optionally, the entire structure of the second needle segment 320 can be a heat-insulating structure, or part of the second needle segment 320 is a heat-insulating structure.

[0035] In this manner, both the base 200 and the first needle segment 310 can contact the wafer 500, allowing heat transfer between the base 200 and the first needle segment 310. The temperature difference between the first needle segment 310 and the base 200 is minimal, preventing uneven film thickness deposited due to a large temperature difference between the two. Furthermore, at least a portion of the second needle segment 320 is thermally insulated, preventing heat from the base 200 from being transferred through the first needle segment 310 to the thermally insulated portion of the second needle segment 320. This means that at least a portion of the second needle segment 320 has a lower temperature than the chemical reaction temperature of the process gas. Consequently, the process gas will not form a coating 330 on this portion of the second needle segment 320. This ensures a consistent tolerance between the ejector pin 300 and the base 200 of the semiconductor process chamber. This allows for smoother movement of the ejector pin 300, preventing breakage and ensuring smooth wafer transfer and the smooth progress of the process.

[0036] In an alternative embodiment, reference Figure 5 and Figure 6 As shown, the second needle segment 320 includes a connected thermal insulator 321 and a needle segment 322. The needle segment 322 is connected to the first needle segment 310 via the thermal insulator 321. The thermal insulator 321 is a thermally insulating structure. Optionally, the thermal insulator 321 can be made of a porous ceramic material. The porous ceramic material has strong heat resistance (temperature resistance greater than 1000°C) and low thermal conductivity (less than 5W / m·K). Of course, the thermal insulator 321 can also be made of other materials that have a thermal insulating effect. The needle segment 322 is a thermally conductive structure. The needle segment 322 can be made of alumina material or other thermally conductive materials. The material of the needle segment 322 can be the same as the material of the first needle segment 310, or the two materials can be different.

[0037] In this embodiment, thermal insulation 321 is used to insulate first needle segment 310 from needle segment 322, reducing the heat transfer between first needle segment 310 and underlying needle segment 322. This effectively lowers the temperature of needle segment 322, preventing the temperature of needle segment 322 from reaching the chemical reaction temperature of the process gas and forming a coating 330 on its surface. Furthermore, less thermal insulation material is used, and ejector pin 300 utilizes more thermally conductive materials, such as metal, which helps ensure the support performance of ejector pin 300.

[0038] Of course, in other embodiments, the entire second needle segment 320 may be a heat-insulating structure.

[0039] In an optional embodiment, the lower end surface of the first needle segment 310 and the upper end surface of the thermal insulation member 321 are both planes, and the lower end surface of the first needle segment 310 and the upper end surface of the thermal insulation member 321 can be connected by welding, bonding, etc.

[0040] In another embodiment, reference Figure 6 As shown, one of the first needle segment 310 and the thermal insulation member 321 is provided with a first bezel 321a, and the other is provided with a first protrusion 310a. The first protrusion 310a extends into the first bezel 321a, and the first needle segment 310 and the thermal insulation member 321 are connected by a first connecting adhesive. The specific structures of the first protrusion 310a and the first bezel 321a are not limited in this embodiment of the application; optionally, the structure of the first protrusion 310a is the same as that of the first bezel 321a.

[0041] By providing the first protrusion 310a and the second groove 321b, the matching area between the first needle segment 310 and the thermal insulation member 321 is increased, and the area of ​​connection between the first needle segment 310 and the thermal insulation member 321 is increased, which is conducive to improving the connection stability between the first needle segment 310 and the thermal insulation member 321.

[0042] Optionally, the lower end surface of the first needle segment 310 is connected to the upper end surface of the heat insulating member 321 by a first connecting adhesive, and the first connecting adhesive is also filled between the first protrusion 310a and the second embedding groove 321b. Optionally, the first connecting adhesive can be a heat insulating adhesive, which can be a ceramic adhesive.

[0043] In an optional embodiment, the lower end surface of the heat insulating member 321 and the upper end surface of the needle segment 322 are both planes, and the lower end surface of the heat insulating member 321 and the upper end surface of the needle segment 322 are connected by welding, bonding, etc.

[0044] In another embodiment, reference Figure 6 As shown, one of the heat shield 321 and the needle segment 322 is provided with a second embedding groove 321b, and the other is provided with a second protrusion 322a, which extends into the second embedding groove 321b. The specific structures of the second protrusion 322a and the second embedding groove 321b are not limited in this embodiment of the application; optionally, the structure of the second protrusion 322a is the same as that of the second embedding groove 321b.

[0045] By providing the second protrusion 322a and the second groove 321b, the matching area between the needle segment 322 and the thermal insulation member 321 is increased, and the area of ​​connection between the needle segment 322 and the thermal insulation member 321 is increased, which is conducive to improving the connection stability between the needle segment 322 and the thermal insulation member 321.

[0046] Optionally, the lower end surface of the heat insulating member 321 is connected to the upper end surface of the needle segment 322 by a second connecting adhesive, and the second protrusion 322a and the second embedding groove 321b are also filled with the second connecting adhesive. Optionally, the second connecting adhesive can be a heat insulating adhesive, which can be a ceramic adhesive.

[0047] In an alternative embodiment, reference Figure 5 As shown, when the wafer contact surface 311 is flush with the wafer supporting surface 210, the upper end surface of the thermal insulation member 321 is higher than the lower end surface of the base 200. Alternatively, when the wafer contact surface 311 is flush with the wafer supporting surface 210, the lower end surface of the thermal insulation member 321 is flush with the lower end surface of the base 200, or the lower end surface of the thermal insulation member 321 is lower than the lower end surface of the base 200, or the lower end surface of the thermal insulation member 321 is higher than the lower end surface of the base 200.

[0048] In this embodiment, since the upper end surface of the heat insulating member 321 is higher than the lower end surface of the base 200, the portion of the ejector pins 300 located below the base 200 is insulated, and the temperature of the portion of the ejector pins 300 located below the base 200 is relatively low. Therefore, the portion of the ejector pins 300 located below the base 200 will not reach the chemical reaction temperature of the process gas, and this portion of the ejector pins 300 will not be coated with the film 330, effectively avoiding the problem of the ejector pins 300 being coated with the film 330. The movement of the ejector pins 300 relative to the base 200 is smoother, thereby preventing the ejector pins 300 from breaking, ensuring smooth film transfer and the smooth progress of the process.

[0049] Of course, in other embodiments, when the wafer contact surface 311 is flush with the wafer supporting surface 210 , the upper end surface of the thermal insulation member 321 may also be lower than the lower end surface of the base 200 .

[0050] Based on the carrier device disclosed in this application, the embodiment of this application also discloses a semiconductor process chamber, please refer to Figure 4-Figure 8 The semiconductor process chamber includes a chamber body 100 and a carrying device. The chamber body 100 serves as a basic installation component for the carrying device. The chamber body 100 provides a vacuum environment required for processing the wafer 500. The carrying device is the carrying device in the above embodiment, that is, the carrying device includes a base 200 and a ejector pin 300. The base 200 is arranged in the chamber body 100, and the ejector pin 300 includes the above-mentioned first needle segment 310 and second needle segment 320.

[0051] Optionally, the semiconductor process chamber can be applied to ALD (Atomic Layer Deposition) technology. ALD technology is a technology that uses several gas phase compounds or single substances containing thin film elements to generate thin films on the surface of the base 200 by alternately passing them into the chamber body 100. ALD technology has the advantages of low resistivity and strong anti-electromigration ability. Figure 1 As shown, when the wafer 500 is in the process position, the wafer 500 is placed on the wafer supporting surface 210 of the susceptor 200, and the process gas entering the chamber body 100 processes the surface of the wafer 500. At the same time, the process gas also flows from both sides of the susceptor 200 to the bottom of the susceptor 200; Figure 2 As shown, after the process is completed, the base 200 slowly descends, and the wafer 500 and the ejector pin 300 also descend with the base 200. When the lower end of the ejector pin 300 contacts the bottom wall 110 of the chamber body 100, the ejector pin 300 will lift the wafer 500, so that the wafer 500 is separated from the supporting surface of the base 200. At this time, the ejector pin 300 supports the wafer 500, so that the wafer 500 is in the wafer transfer position, so that the wafer 500 can be transferred by the wafer transfer device.

[0052] However, since the process gas gathers at the bottom of the susceptor 200, the chemical reaction temperature of the ejector pin 300 (i.e., about 300°C) is easily reached in this area. Then, the process gas forms a coating 330 on the surface of the portion of the ejector pin 300 below the susceptor 200. Then, when the process is completed and the susceptor 200 is lowered, the tolerance between the ejector pin 300 and the susceptor 200 is reduced due to the presence of the coating 330. The resistance of the ejector pin 300 in the process of moving relative to the susceptor 200 is increased, and the ejector pin 300 is prone to breakage (e.g., Figure 3 As shown in the figure, the film transfer fails and the process is affected.

[0053] Optionally, the semiconductor process chamber further includes an air inlet block 800, a flow grid 600, and a flow fixture 700. The air inlet block 800 is disposed in the chamber body 100, and the process gas enters the chamber body 100 through the air inlet block 800. The flow grid 600 is located above the wafer support surface 210 and is opposite to the air inlet block 800. The flow grid 600 is provided with multiple air outlets. In this way, the process gas entering the chamber body 100 from the air inlet block 800 flows uniformly through the multiple air outlets and reaches the surface of the wafer 500 supported by the wafer support surface 210, thereby depositing a thin film on the surface of the wafer 500. The flow fixture 700 is disposed on opposite sides of the susceptor 200. During the process, the process gas will flow from the gap between the flow fixture 700 and the sidewall of the chamber body 100 to the lower area of ​​the susceptor 200, causing the process gas to accumulate in the lower area of ​​the susceptor 200.

[0054] like Figure 4 As shown, the semiconductor process chamber further includes a cooling device disposed within the chamber body 100 and facing the lower end surface of the ejector pin 300. As the ejector pin 300 descends relative to the base 200, the lower end surface of the ejector pin 300 contacts the cooling device, which cools the lower half of the ejector pin 300, lowering the temperature of the lower half of the ejector pin 300 and preventing it from reaching the chemical reaction temperature. Consequently, the process gas will not form a coating film 330 on this portion of the surface of the second needle segment 320.

[0055] With this arrangement, when the process gas flows toward the bottom of the base 200, it can, to a certain extent, prevent the process gas from forming a coating 330 on the surface of the ejector pin 300, thereby ensuring the tolerance between the ejector pin 300 and the base 200. The movement of the ejector pin 300 relative to the base 200 is relatively smooth, thereby preventing the ejector pin 300 from breaking, ensuring smooth film transfer and the smooth progress of the process.

[0056] In an optional embodiment, reference Figure 8As shown, the cooling device includes a water-cooled plate 400, which is provided with a cooling water channel 410. The cooling water channel 410 has a water inlet 411 and a water return port 412 at either end. Cooling water can flow into the cooling water channel 410 from the water inlet 411 and out from the water return port 412. When the water inlet 411 and the water return port 412 are open, the cooling water in the cooling water channel 410 cools the ejector 300 when the ejector 300 descends to contact the water-cooled plate 400.

[0057] The cooling device using the water cooling plate 400 structure gradually cools the ejector pin 300 using the cooling water, so that the lower half of the ejector pin 300 gradually cools down, resulting in small temperature fluctuations, good temperature control effect, and energy saving and environmental protection.

[0058] Of course, in other embodiments, the cooling device may also be other cooling structures besides the water cooling plate 400 , as long as it can cool the lower end of the ejector pin 300 .

[0059] In another embodiment, the cooling device further includes a sensing element, which is used to sense the position of the ejector pin 300 relative to the water cooling plate 400. Figure 4 As shown, when the sensing element senses that ejector pin 300 has descended to the first position relative to water-cooling plate 400, water inlet 411 and water return port 412 are in an open state, cooling water flows through cooling water channel 410, and the cooling water in cooling water channel 410 cools ejector pin 300. When the sensing element senses that ejector pin 300 has not descended to the first position relative to water-cooling plate 400, water inlet 411 and water return port 412 are in a closed state, that is, cooling water does not flow through cooling water channel 410.

[0060] Optionally, the sensing element may be a position sensor that can directly detect the position of the ejector pin 300 relative to the water cooling plate 400; the sensing element may be a pressure-sensitive sensor that is located below the ejector pin 300 and detects whether the ejector pin 300 has descended to the first position by detecting whether the ejector pin 300 presses the pressure-sensitive sensor. Of course, the sensing element may also be other types of sensing elements.

[0061] In this embodiment, the opening timing of the water inlet 411 and the water return port 412 is controlled according to the position of the ejector 300 sensed by the sensing element, thereby preventing the water cooling plate 400 from continuously cooling when the ejector 300 has not yet fallen into place, thereby avoiding waste of cooling energy.

[0062] In a further embodiment, a sensing element is provided on the water-cooling plate 400, and the sensing element is opposite to the lower end surface of the ejector 300. The sensing element may be a pressure-sensitive sensor. Specifically, when the sensing element senses that the ejector 300 has descended to the first position relative to the water-cooling plate 400, the lower end surface of the ejector 300 contacts the sensing element. At this time, the water inlet 411 and the water return port 412 are in an open state, and cooling water flows in the cooling water channel 410. The cooling water in the cooling water channel 410 cools the ejector 300 through the sensing element, ensuring that the cooling water cools the ejector 300 smoothly. When the sensing element senses that the ejector 300 has not descended to the first position relative to the water-cooling plate 400, the lower end surface of the ejector 300 does not contact the sensing element, and the water inlet 411 and the water return port 412 are in a closed state, that is, the cooling water does not flow in the cooling water channel 410.

[0063] In this way, since the sensing element is opposite to the lower end surface of the ejector pin 300 , whether the ejector pin 300 has descended to the first position can be accurately detected by whether the ejector pin 300 contacts the sensing element, which is conducive to improving detection accuracy.

[0064] Of course, in other embodiments, the sensing element may not be disposed within the water-cooling plate 400, that is, the sensing element may not be opposed to the lower end surface of the ejector pin 300. Instead, the sensing element may be a position sensor. When the sensing element senses that the ejector pin 300 has descended to the first position relative to the water-cooling plate 400, the lower end surface of the ejector pin 300 directly contacts the cooling water channel 410, and the cooling water within the cooling water channel 410 directly cools the ejector pin 300.

[0065] In an optional embodiment, the sensing element is a pressure-sensitive sensor, and the semiconductor process chamber may further include a controller and a control switch. The control switch and the pressure-sensitive sensor are respectively connected to the controller for communication. When the pressure-sensitive sensor senses that it is pressed by the lower end surface of the ejector pin 300, the controller controls the control switch so that the control switch opens the water inlet 411 and the water return port 412.

[0066] In another embodiment, the sensing element is a pressure-sensitive sensor 420, which is provided with a disc. A control switch is provided at both the water inlet 411 and the water return port 412. The disc is in transmission connection with the control switch. When the lower end surface of the ejector pin 300 presses the pressure-sensitive sensor 420, the disc moves and acts on the control switch, causing the control switch to open the water inlet 411 and the water return port 412. Specifically, when the ejector pin 300 contacts the pressure-sensitive sensor 420, the pressure-sensitive sensor 420 changes load and a voltage signal appears. When the pressure value is higher or lower than the rated safety pressure value, the disc moves instantaneously and acts on the control switch. Optionally, the disc can be in transmission connection with the control switch via a connecting guide rod, and when the disc moves, the connecting guide rod pushes the control switch.

[0067] The mechanical structure formed by the pressure-sensitive sensor 420 and the control switch can accurately control the opening of the water inlet 411 and the water return port 412 according to the sensed pressure, has high sensitivity, and avoids the problem of sensing failure caused by power failure of the electrical connection.

[0068] In an optional embodiment, if Figure 7 As shown, at least a portion of the cooling water channel 410 surrounds the sensing element, and the cooling water channel 410 is symmetrical about the axis of the ejector pin 300. Optionally, the sensing element is located at the center of the water-cooled plate 400, and the cooling water channel 410 includes an inner channel, a first connecting channel, a second connecting channel, a first outer channel, and a second outer channel. The inner channel surrounds the sensing element, and the first and second outer channels both surround the outside of the inner channel. The first outer channel communicates with the first end of the inner channel through the first connecting channel, and the second outer channel communicates with the second end of the inner channel through the second connecting channel. The inner channel is symmetrical about the axis of the ejector pin 300, the first and second connecting channels are symmetrical about the axis of the ejector pin 300, and the first and second outer channels are symmetrical about the axis of the ejector pin 300.

[0069] Further optionally, the inner channel, the first outer channel and the second outer channel can all be arc-shaped structures. Of course, structures of other shapes can also be used; the first connecting channel and the second connecting channel can be straight channels or arc-shaped channels. The embodiment of the present application does not limit the specific structure of the cooling water channel 410.

[0070] In this embodiment, because at least a portion of the cooling water channel 410 surrounds the sensing element, when the lower end of the ejector pin 300 contacts the sensing element, the cooling water channel 410 can relatively fully cool the lower end surface of the ejector pin 300. Furthermore, the cooling water channel 410 is symmetrical about the axis of the ejector pin 300. Therefore, the cooling water channel 410 cools the lower end surface of the ejector pin 300 more uniformly, which is conducive to improving the cooling effect.

[0071] In an alternative embodiment, reference Figure 8 As shown, the chamber body 100 includes a bottom wall 110, which is located below the base 200. The bottom wall 110 is provided with an embedding groove, which faces the base 200 and is opposite to the ejector pin 300. The water cooling plate 400 is arranged in the embedding groove. The sensing element has a contact pressure surface, which is flush with the surface of the bottom wall 110 facing the base 200, that is, the cooling device does not protrude from the surface of the bottom wall 110 facing the base 200.

[0072] By providing an embedding groove, the water cooling plate 400 is embedded in the embedding groove, thereby preventing the water cooling plate 400 from protruding from the surface of the base 200 and preventing the lower end surface of the ejector pin 300 from reaching the height corresponding to the bottom wall 110 of the base 200, that is, preventing the cooling device from affecting the lifting process of the ejector pin 300.

[0073] Of course, in other embodiments, the contact surface of the sensing element may be lower or higher than the surface of the bottom wall 110 facing the base 200 .

[0074] In an optional embodiment, the base 200 is provided with a plurality of through holes 220 at intervals, the number of ejector pins 300 is multiple, the ejector pins 300 correspond one-to-one to the through holes 220, the number of cooling devices is one, and the cooling device is provided below one of the ejector pins 300; and / or, one of the ejector pins 300 includes the first needle segment 310 and the second needle segment 320 described above.

[0075] In another embodiment, there are multiple cooling devices, each corresponding to one ejector pin 300. With this arrangement, multiple cooling devices can be provided to cool the lower end of each ejector pin 300, which helps to lower the temperature of the lower half of each ejector pin 300, preventing the lower half of each ejector pin 300 from reaching a chemical reaction temperature, thereby preventing the formation of a coating 330 on the surface of the lower half of each ejector pin 300.

[0076] In yet another embodiment, each ejector pin 300 includes the aforementioned first segment 310 and second segment 320. With this configuration, at least a portion of the second segment 320 of each ejector pin 300 comprises a heat-insulating structure. This prevents heat from the first segment 310 from being transferred to the heat-insulating portion of the second segment 320. Consequently, the temperature of the second segment 320 corresponding to the heat-insulating portion of each ejector pin 300 remains low, less likely to reach the chemical reaction temperature of the process gas, and thereby prevents the formation of a coating 330 on the surface of the second segment 320 corresponding to the heat-insulating portion of each ejector pin 300.

[0077] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A carrier device for a semiconductor process chamber, characterized in that: The invention comprises a base (200) and a top pin (300), wherein the base (200) is provided with a wafer carrying surface (210) and a through hole (220) for carrying a wafer (500), and the top pin (300) is used to lift the wafer (500), and the top pin (300) passes through the through hole (220), and the top pin (300) can be raised and lowered relative to the base (200) so that the wafer (500) is located on the wafer carrying surface (210) or is separated from the wafer carrying surface (210). The ejector pin (300) comprises a first needle segment (310) and a second needle segment (320) connected to each other, wherein the top of the first needle segment (310) is provided with a wafer contact surface (311), and the second needle segment (320) is located below the first needle segment (310), and at least a portion of the second needle segment (320) is a heat insulation structure.

2. The carrying device according to claim 1, characterized in that: The second needle segment (320) comprises a connected heat insulating member (321) and a needle segment (322), wherein the needle segment (322) is connected to the first needle segment (310) via the heat insulating member (321), and the heat insulating member (321) is the heat insulating structure.

3. The carrying device according to claim 2, characterized in that: One of the first needle segment (310) and the heat insulating member (321) is provided with a first embedding groove (321a), and the other is provided with a first protrusion (310a), and the first protrusion (310a) extends into the first embedding groove (321a); And / or, one of the heat insulating member (321) and the needle segment (322) is provided with a second embedding groove (321b), and the other is provided with a second protrusion (322a), and the second protrusion (322a) extends into the second embedding groove (321b).

4. The carrying device according to claim 2, characterized in that: When the wafer contact surface (311) is flush with the wafer carrying surface (210), the upper end surface of the heat insulating member (321) is higher than the lower end surface of the base (200).

5. A semiconductor process chamber, characterized in that: The chamber comprises a chamber body (100) and a carrying device, wherein the carrying device is the carrying device according to any one of claims 1 to 4, and the base (200) is arranged in the chamber body (100); The semiconductor process chamber further comprises a cooling device, which is arranged in the chamber body (100) and is opposite to the lower end surface of the ejector pin (300).

6. The semiconductor process chamber according to claim 5, wherein: The cooling device comprises a water cooling plate (400) and a sensing element, wherein the sensing element is used to sense the position of the ejector pin (300) relative to the water cooling plate (400), and the water cooling plate (400) is provided with a cooling water channel (410), and the two ends of the cooling water channel (410) are respectively a water inlet (411) and a water return port (412). When the sensing element senses that the ejector pin (300) has descended to a first position relative to the water cooling plate (400), the water inlet (411) and the water return port (412) are in an open state, and the cooling water in the cooling water channel (410) cools the ejector pin (300).

7. The semiconductor process chamber according to claim 6, wherein: The sensing element is disposed on the water cooling plate (400), and the sensing element is opposite to the lower end surface of the ejector pin (300). When the sensing element senses that the ejector pin (300) has descended to the first position relative to the water-cooling plate (400), the lower end surface of the ejector pin (300) contacts the sensing element, and the cooling water in the cooling water channel (410) cools the ejector pin (300) through the sensing element.

8. The semiconductor process chamber according to claim 7, wherein: The sensing element is a pressure-sensitive sensor (420), and the pressure-sensitive sensor (420) is provided with a disc. A control switch is provided at the water inlet (411) and the water return outlet (412). The disc is in transmission connection with the control switch. When the lower end surface of the ejector pin (300) presses the pressure-sensitive sensor (420), the disc moves and acts on the control switch, so that the control switch opens the water inlet (411) and the water return outlet (412).

9. The semiconductor process chamber according to claim 7, wherein: The chamber body (100) includes a bottom wall (110), the bottom wall (110) is provided with an embedding groove, the embedding groove is opposite to the ejector pin (300), the water cooling plate (400) is arranged in the embedding groove, and the sensing element has a contact pressure surface, which is flush with the surface of the bottom wall (110) facing the base (200).

10. The semiconductor process chamber according to claim 5, wherein: The base (200) is provided with a plurality of through holes (220) at intervals, the number of the ejector pins (300) is multiple, and the ejector pins (300) correspond to the through holes (220) one by one. There are multiple cooling devices, and each cooling device corresponds to each of the ejector pins (300); and / or each ejector pin (300) includes the first needle segment (310) and the second needle segment (320).

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