Laminated branching filter

Abstract

A stacked body of a branching filter includes a first region and a second region, and includes a first structure that is disposed in the vicinity of a boundary between the first region and the second region and that is connected to a ground. The first structure includes a plurality of first partial structures stacked in a direction parallel to a stacking direction of the plurality of dielectric layers. Each of the plurality of first partial structures includes a plurality of first vias and a first conductor layer connecting the plurality of first vias. The first inductor is disposed in the second region and is connected to the first structure.

Description

Technical Field

[0001] The present invention relates to a wave splitter for separating a plurality of signals having different frequencies from each other. Background Art

[0002] Small mobile communication devices are widely used in which an antenna is provided for use by multiple applications using different systems and frequency bands, and a multiple signals transmitted and received by the antenna are separated using a demultiplexer.

[0003] Generally speaking, a splitter that separates a first signal with a frequency within a first frequency band from a second signal with a frequency within a second frequency band higher than the first frequency band comprises: a common port; a first signal port; a second signal port; a first filter, which is arranged on a first signal path from the common port to the first signal port; and a second filter, which is arranged on a second signal path from the common port to the second signal port.

[0004] In recent years, the market has demanded miniaturization and space-saving features for small mobile communication devices, and this has also led to a demand for miniaturization of the splitter filters used in these devices. As a splitter suitable for miniaturization, a splitter using a laminated structure comprising multiple dielectric layers and multiple conductor layers is known.

[0005] International Publication No. 2019 / 244481 discloses a stacked composite filter device comprising: a stacked body formed by stacking dielectrics; a first filter disposed in a first region; a second filter disposed in a second region; and a conductive component disposed in a region of the first region adjacent to the second region. The conductive component extends in the stacking direction. One end of the conductive component is grounded, and the other end is connected to the inductor of the first filter.

[0006] In recent years, the market has demanded smaller and more space-saving mobile communication devices, and this has also led to a demand for smaller splitters used in these devices. However, miniaturizing the splitter reduces the isolation between the first and second filters.

[0007] In International Publication No. 2019 / 244481, a columnar conductive component is used to shield the first filter from the second filter. However, if the splitter is further miniaturized, the columnar conductive component may not provide sufficient shielding. Summary of the Invention

[0008] (1) Technical issues to be resolved

[0009] An object of the present invention is to provide a branching filter capable of ensuring isolation between two areas.

[0010] (2) Technical solution

[0011] The stacked splitter of the present invention comprises: a common terminal; a first signal terminal; a second signal terminal; a first path connecting the common terminal and the first signal terminal; a second path connecting the common terminal and the second signal terminal; a first inductor disposed between the common terminal and the second signal terminal in a circuit structure; and a laminate comprising a plurality of laminated dielectric layers for integrating the common terminal, the first signal terminal, the second signal terminal, the first path, the second path, and the first inductor. The first path is configured to selectively pass signals having frequencies within a first passband. The second path is configured to selectively pass signals having frequencies within a second passband, the frequencies within the second passband being different from those in the first passband.

[0012] The laminate further includes a first region and a second region adjacent to each other within the laminate, and includes a first structure disposed near a boundary between the first region and the second region and connected to a grounding member. The first structure includes a plurality of first partial structures stacked in a direction parallel to the stacking direction of the plurality of dielectric layers. The plurality of first partial structures each include a plurality of first through-holes and a first conductive layer connecting the plurality of first through-holes. The first inductor is disposed in the second region and connected to the first structure.

[0013] (3) Beneficial effects

[0014] In the stacked splitter of the present invention, the stack includes a first structure disposed near the boundary between the first and second regions and connected to a ground. A first inductor is disposed in the second region and connected to the first structure. Thus, according to the present invention, isolation between the first and second regions can be ensured.

[0015] Other objects, features and advantages of the present invention will become more apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a circuit diagram showing the circuit configuration of a stacked-type branching filter according to one embodiment of the present invention.

[0017] Figure 2 It is a perspective view showing the appearance of a stacked-type branching filter according to one embodiment of the present invention.

[0018] Figures 3A to 3C This is an explanatory diagram showing the pattern formation surfaces of the first to third dielectric layers in the laminated body of the laminated type duplexer according to one embodiment of the present invention.

[0019] Figures 4A to 4C It is an explanatory diagram showing the pattern formation surfaces of the fourth to sixth dielectric layers in the laminated body of the laminated type duplexer according to one embodiment of the present invention.

[0020] Figures 5A to 5C It is an explanatory diagram showing the pattern formation surfaces of the seventh to ninth dielectric layers in the laminated body of the laminated type duplexer according to one embodiment of the present invention.

[0021] Figures 6A to 6C It is an explanatory diagram showing the pattern formation surfaces of the tenth to twelfth dielectric layers in the laminated body of the laminated type duplexer according to one embodiment of the present invention.

[0022] 7A to 7C It is an explanatory diagram showing the pattern formation surfaces of the thirteenth to fifteenth dielectric layers in the laminated body of the laminated type duplexer according to one embodiment of the present invention.

[0023] Figures 8A to 8C It is an explanatory diagram showing the pattern formation surfaces of the sixteenth to eighteenth layers in the laminated body of the laminated duplexer according to one embodiment of the present invention.

[0024] Figures 9A to 9C It is an explanatory diagram showing the pattern formation surfaces of the nineteenth to twenty-first layers in the laminated body of the laminated duplexer according to one embodiment of the present invention.

[0025] 10A to 10C It is an explanatory diagram showing the pattern forming surfaces of the twenty-second to twenty-fourth layers in the laminated body of the laminated duplexer according to one embodiment of the present invention.

[0026] Figure 11A as well as Figure 11B It is an explanatory diagram showing the pattern formation surfaces of the twenty-fifth layer and the twenty-sixth layer in the laminated body of the laminated type duplexer according to one embodiment of the present invention.

[0027] Figure 12 This is a perspective view showing the interior of a laminated body of a laminated branching filter according to one embodiment of the present invention.

[0028] Figure 13 It is a plan view showing a part of the interior of a laminated body of a laminated duplexer according to one embodiment of the present invention.

[0029] Figure 14 This is a characteristic diagram showing the frequency characteristics of the isolation between the first signal terminal and the third signal terminal obtained by simulation.

[0030] Figure 15 3 is a characteristic diagram showing the frequency characteristics of the isolation between the second signal terminal and the third signal terminal obtained by simulation. DETAILED DESCRIPTION

[0031] Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. Figure 1The structure of a stacked-type branching filter (hereinafter, simply referred to as a branching filter) 1 according to one embodiment of the present invention will be roughly described. Figure 1 This is a circuit diagram showing the circuit configuration of a splitter 1. The splitter 1 includes: a common terminal 2; a first signal terminal 3; a second signal terminal 4; a third signal terminal 5; a first path 6 connecting the common terminal 2 and the first signal terminal 3; a second path 7 connecting the common terminal 2 and the second signal terminal 4; and a third path 8 connecting the common terminal 2 and the third signal terminal 5.

[0032] The demultiplexer 1 is configured to function as a triplexer. The first path 6 is configured to selectively pass signals having frequencies within a first passband. The second path 7 is configured to selectively pass signals having frequencies within a second passband, which differs from the first passband. The third path 8 is configured to selectively pass signals having frequencies within a third passband, which differs from the first and second passbands. In this embodiment, the second passband is a higher frequency band than the first passband, and the third passband is a higher frequency band than the second passband.

[0033] First path 6 and second path 7 form a common path on the common terminal 2 side, and branch off at the end of this common path opposite to common terminal 2. Wave splitter 1 further includes filters 10, 20, and 30, and a filter unit 40. Filter 10 is provided in the common path. Filter 20 is provided in first path 6 between the branch and first signal terminal 3. Filter 30 is provided in second path 7 between the branch and second signal terminal 4. Filter unit 40 is provided in third path 8.

[0034] Filter 10 is circuit-configured between common terminal 2 and first and second signal terminals 3 and 4. Filter 20 is circuit-configured between filter 10 and first signal terminal 3. Filter 30 is circuit-configured between filter 10 and second signal terminal 4. Filter unit 40 is circuit-configured between common terminal 2 and third signal terminal 5. In this application, the term "circuit-configured" refers to a configuration on a circuit diagram, not a physical configuration.

[0035] Filter section 40 includes filter 41 and filter 42. Filters 10, 20, and 42 can be low-pass filters. Filters 30 and 41 can be high-pass filters. In this case, two low-pass filters (filters 10 and 20) are provided in first path 6. A low-pass filter (filter 10) and a high-pass filter (filter 30) are provided in second path 7. A high-pass filter (filter 41) and a low-pass filter (filter 42) are provided in third path 8. The low-pass filter and high-pass filter, respectively provided in second path 7 and third path 8, constitute a bandpass filter.

[0036] A first signal with a frequency within a first passband input to common terminal 2 selectively passes through filters 10 and 20 and is output from first signal terminal 3. A second signal with a frequency within a second passband input to common terminal 2 selectively passes through filters 10 and 30 and is output from second signal terminal 4. A third signal with a frequency within a third passband input to common terminal 2 selectively passes through filters 41 and 42 and is output from third signal terminal 5. In this manner, splitter 1 separates the first signal into the third signal.

[0037] Next, refer to Figure 1 An example of the structure of filters 10, 20, 30, 41, and 42 will be described. First, filter 10 will be described. Filter 10 includes inductors L11 and L12 and capacitors C11, C12, and C13. One end of inductor L11 is connected to common terminal 2. One end of inductor L12 is connected to the other end of inductor L11.

[0038] Capacitor C11 is connected in parallel with inductor L12. One end of capacitor C12 is connected to the connection point between inductor L11 and inductor L12. One end of capacitor C13 is connected to the other end of inductor L12. The other end of each capacitor C12 and C13 is connected to ground.

[0039] Next, the filter 20 is described. The filter 20 includes inductors L21 and L22 and capacitors C21, C22, and C23. One end of the inductor L21 is connected to the other end of the inductor L12 of the filter 10. One end of the inductor L22 is connected to the other end of the inductor L21. The other end of the inductor L22 is connected to the first signal terminal 3.

[0040] Capacitor C21 is connected in parallel with inductor L22. One end of capacitor C22 is connected to the connection point between inductor L21 and inductor L22. One end of capacitor C23 is connected to the other end of inductor L22. The other end of each of capacitors C22 and C23 is connected to ground.

[0041] Next, filter 30 is described. Filter 30 includes an inductor L31 and capacitors C31, C32, and C33. One end of capacitor C31 is connected to the other end of inductor L12 of filter 10. One end of capacitor C32 is connected to the other end of capacitor C31. The other end of capacitor C32 is connected to second signal terminal 4. One end of capacitor C33 is connected to one end of capacitor C31. The other end of capacitor C33 is connected to the other end of capacitor C32.

[0042] One end of the inductor L31 is connected to a connection point between the capacitor C31 and the capacitor C32, and the other end of the inductor L31 is connected to the ground.

[0043] Next, filter 41 of filter unit 40 will be described. Filter 41 includes inductors L41 and L42 and capacitors C41, C42, C43, C44, C45, and C46. One end of capacitor C41 is connected to common terminal 2. One end of capacitor C42 is connected to the other end of capacitor C41. One end of capacitor C43 is connected to one end of capacitor C41. The other end of capacitor C43 is connected to the other end of capacitor C42.

[0044] One end of capacitor C44 is connected to the other end of capacitor C42. One end of capacitor C45 is connected to the other end of capacitor C44. One end of capacitor C46 is connected to one end of capacitor C44. The other end of capacitor C46 is connected to the other end of capacitor C45.

[0045] One end of the inductor L41 is connected to the connection point between the capacitor C41 and the capacitor C42. One end of the inductor L42 is connected to the connection point between the capacitor C44 and the capacitor C45. The other end of each of the inductors L41 and L42 is connected to the ground.

[0046] Next, the filter 42 of the filter unit 40 will be described. Filter 42 includes inductors L43, L44, and L45, and capacitors C47, C48, C49, C50, C51, and C52. One end of inductor L43 is connected to the other end of capacitor C45 of filter 41. One end of inductor L44 is connected to the other end of inductor L43. One end of inductor L45 is connected to the other end of inductor L44. The other end of inductor L45 is connected to the third signal terminal 5.

[0047] The capacitor C47 is connected in parallel with the inductor L43, and the capacitor C48 is connected in parallel with the inductor L44.

[0048] One end of capacitor C49 is connected to one end of inductor L43. One end of capacitor C50 is connected to the connection point between inductor L43 and inductor L44. One end of capacitor C51 is connected to the connection point between inductor L44 and inductor L45. One end of capacitor C52 is connected to the other end of inductor L45. The other ends of capacitors C49, C50, C51, and C52 are each connected to ground.

[0049] Next, refer to Figure 2 Other structures of the branching filter 1 will be described. Figure 2 It is a perspective view showing the appearance of the branching filter 1 .

[0050] The splitter 1 further includes a laminate 50 comprising a plurality of laminated dielectric layers and a plurality of conductors. The laminate 50 integrates the common terminal 2, the first to third signal terminals 3 to 5, the first to third paths 6 to 8, and the filters 10, 20, 30, 41, and 42. The filters 10, 20, 30, 41, and 42 are each constructed using a plurality of conductors.

[0051] The laminate 50 has a bottom surface 50A and a top surface 50B located at opposite ends in the stacking direction T of the multiple dielectric layers, and four side surfaces 50C to 50F connecting the bottom surface 50A and the top surface 50B. Side surfaces 50C and 50D face opposite sides, and side surfaces 50E and 50F also face opposite sides. Side surfaces 50C to 50F are perpendicular to the bottom surface 50A and the top surface 50B.

[0052] Here, if Figure 2 As shown in FIG, the X, Y, and Z directions are defined. The X, Y, and Z directions are mutually orthogonal. In this embodiment, the Z direction is a direction parallel to the stacking direction T. Furthermore, the direction opposite to the X direction is referred to as the -X direction, the direction opposite to the Y direction is referred to as the -Y direction, and the direction opposite to the Z direction is referred to as the -Z direction. Furthermore, the expression "when viewed from a predetermined direction (e.g., the Z direction)" means observing the object from a separate position along the predetermined direction or a direction parallel to the predetermined direction.

[0053] like Figure 2 As shown, bottom surface 50A is located at the end of stack 50 in the -Z direction. Top surface 50B is located at the end of stack 50 in the Z direction. Side surface 50C is located at the end of stack 50 in the -X direction. Side surface 50D is located at the end of stack 50 in the X direction. Side surface 50E is located at the end of stack 50 in the -Y direction. Side surface 50F is located at the end of stack 50 in the Y direction.

[0054] The demultiplexer 1 further includes electrodes 111, 112, 113, 114, 115, 116, 117, and 118 provided on the bottom surface 50A of the laminate 50. Electrodes 111, 112, 113, and 114 are arranged in this order along the X direction, closer to the side surface 50E than to the side surface 50F. Electrodes 115, 116, 117, and 118 are arranged in this order along the -X direction, closer to the side surface 50F than to the side surface 50E.

[0055] Electrode 116 corresponds to common terminal 2, electrode 118 corresponds to first signal terminal 3, electrode 114 corresponds to second signal terminal 4, and electrode 112 corresponds to third signal terminal 5. Therefore, common terminal 2, first signal terminal 3, second signal terminal 4, and third signal terminal 5 are provided on bottom surface 50A of laminate 50. Electrodes 111, 113, 115, and 117 are each connected to a ground.

[0056] Next, refer to Figures 3A to 11B An example of the multiple dielectric layers and multiple conductors that constitute the laminate 50 will be described. In this example, the laminate 50 includes 26 laminated dielectric layers. Hereinafter, these 26 dielectric layers will be referred to as the first through the 26th dielectric layers, starting from the bottom. Reference numerals 51 through 76 denote the first through the 26th dielectric layers.

[0057] exist Figures 3A to 10C In the figure, multiple circles represent multiple through holes. Multiple through holes are formed in each of the dielectric layers 51 to 74. The multiple through holes are formed by filling the holes for the through holes with conductor paste. The multiple through holes are connected to electrodes, conductor layers or other through holes. In the following description, the connection relationship between each of the multiple through holes and electrodes, conductor layers or other through holes is described in the state where the first to twenty-sixth dielectric layers 51 to 76 are stacked. In addition, in Figures 3A to 10C In the figure, specific through holes among the plurality of through holes are respectively denoted by reference numerals.

[0058] Figure 3A : represents the pattern forming surface of the first dielectric layer 51. Electrodes 111 to 118 are formed on the pattern forming surface of the dielectric layer 51. Figure 3A The two through holes marked with reference numerals 51T1a are connected to the electrode 111. In the following description, the through hole marked with reference numerals 51T1a is simply referred to as through hole 51T1a. In addition, through holes marked with reference numerals other than through hole 51T1a are also described in the same way as through hole 51T1a.

[0059] Figure 3A The two through-holes 51T1b shown are connected to the electrodes 117 . Figure 3AThe two through-holes 51T2 shown are connected to the electrodes 113 . Figure 3A The through-hole 51T5 shown is connected to the electrode 112.

[0060] Figure 3B : shows the pattern forming surface of the second dielectric layer 52. Conductive layers 521, 522, 523, 524, 525, 526, and 52A are formed on the pattern forming surface of the dielectric layer 52. The conductive layers 523 and 524 are connected to the conductive layer 52A. Figure 3B In FIG. 5 , the boundaries between the conductor layer 523 and the conductor layer 52A and the boundaries between the conductor layer 524 and the conductor layer 52A are indicated by dotted lines. Figure 3B In the same figure, the boundary between two conductor layers is also indicated by a dotted line.

[0061] The two through-holes 51T1a are connected to the conductive layer 524. The two through-holes 51T1b are connected to the conductive layer 523. Figure 3B The through holes 52T1a and 52T1b are connected to the conductor layer 52A. Figure 3B The two through holes 52T2 shown are connected to the conductor layer 525. The through holes 51T5 and Figure 3B The via 52T5 shown is connected to the conductor layer 522 .

[0062] Figure 3C The patterned surface of the third dielectric layer 53 is shown. Conductive layers 531, 532, 533, 534, 535, 536, 537, 538, 53A, and 53B are formed on the patterned surface of the dielectric layer 53. Conductive layer 536 is connected to conductive layer 535. Conductive layers 53A and 53B are connected to conductive layer 537.

[0063] The two through holes 52T2 are connected to the conductor layer 537. The through hole 52T5 is connected to the conductor layer 535. The through holes 52T1a, 52T1b and Figure 3C The illustrated vias 53T1a, 53T1b are connected to the conductor layer 53A. Figure 3C The illustrated vias 53T2a, 53T2b are connected to the conductor layer 53B.

[0064] Figure 4A The fourth dielectric layer 54 is patterned. Conductive layers 541, 542, 543, 544, 545, 546, 547, 548, and 549 are formed on the patterned surface of the dielectric layer 54. Conductive layer 546 is connected to conductive layer 545. Conductive layers 547 and 548 are connected to conductive layer 549.

[0065] Through holes 53T1a and 53T2a are respectively Figure 4A The through holes 54T1a and 54T2a are connected. Figure 4A The through hole 54T1b is shown to be connected to the conductor layer 543. The through hole 53T2b and Figure 4A The via 54T2 b shown is connected to the conductor layer 541 . Figure 4A The via 54T3 b shown is connected to the conductor layer 549 .

[0066] Figure 4B The patterned surface of the fifth dielectric layer 55 is shown. Conductive layers 551, 552, 553, 554, 555, 556, 557, 55A, and 55B are formed on the patterned surface of the dielectric layer 55. Conductive layer 554 is connected to conductive layer 553. Conductive layer 557 is connected to conductive layer 55A.

[0067] Through holes 54T1a, 54T1b and Figure 4B The through holes 55T1a and 55T1b are connected to the conductor layer 55A. The through holes 54T2a and 54T2b are connected to the conductor layer 55A. Figure 4B The through holes 55T2a and 55T2b are connected to the conductor layer 55B. Figure 4B The through hole 55T3b is shown connected.

[0068] Figure 4C 1 shows the patterned surface of the sixth dielectric layer 56. Conductive layers 561, 562, 563, 564, 565, 566, 567, 568, and 569 are formed on the patterned surface of the dielectric layer 56. The conductive layer 566 is connected to the conductive layer 565.

[0069] Through holes 55T1a, 55T2a, and 55T3b are respectively Figure 4C The through holes 56T1a, 56T2a, and 56T3b are connected. Figure 4C The through hole 56T1b is shown to be connected to the conductor layer 563. The through hole 55T2b and Figure 4C The via 56T2 b shown is connected to the conductor layer 561 . Figure 4C The via 56T3 a shown is connected to the conductor layer 566 .

[0070] Figure 5A The figure shows the patterned surface of the seventh dielectric layer 57. Conductive layers 571, 572, 573, 574, 57A, and 57B are formed on the patterned surface of the dielectric layer 57. The conductive layer 574 is connected to the conductive layer 57B.

[0071] Through holes 56T1a, 56T1b and Figure 5A The through holes 57T1a and 57T1b are connected to the conductor layer 57A. The through holes 56T2a and 56T2b are connected to the conductor layer 57A. Figure 5AThe through holes 57T2a and 57T2b are connected to the conductor layer 57B. Figure 5A The through holes 57T3a, 57T3b are shown connected.

[0072] Figure 5B : shows the pattern forming surface of the eighth dielectric layer 58. Conductive layers 581, 582, and 583 are formed on the pattern forming surface of the dielectric layer 58. Through holes 57T1a, 57T1b, 57T2a, 57T2b, 57T3a, and 57T3b are respectively connected to Figure 5B The through-holes 58T1a, 58T1b, 58T2a, 58T2b, 58T3a, 58T3b are shown connected.

[0073] Figure 5C : shows the pattern forming surface of the ninth dielectric layer 59. Conductive layers 591, 592, 59A, and 59B are formed on the pattern forming surface of the dielectric layer 59. Through holes 58T1a, 58T1b and Figure 5C The through holes 59T1a and 59T1b are shown to be connected to the conductor layer 59A. The through holes 58T2a and 58T2b are shown to be connected to the conductor layer 59A. Figure 5C The through holes 59T2a and 59T2b are connected to the conductor layer 59B. Figure 5C The through holes 59T3a, 59T3b are shown connected.

[0074] Figure 6A : shows the pattern forming surface of the tenth dielectric layer 60. A conductor layer 601 is formed on the pattern forming surface of the dielectric layer 60. The through holes 59T1a, 59T1b, 59T2a, 59T2b, 59T3a, and 59T3b are respectively connected to Figure 6A The through-holes 60T1a, 60T1b, 60T2a, 60T2b, 60T3a, 60T3b are shown connected.

[0075] Figure 6B The pattern forming surface of the eleventh dielectric layer 61 is shown. The conductor layer 619 for the inductor and the conductor layers 61A and 61B are formed on the pattern forming surface of the dielectric layer 61. The through holes 60T1a, 60T1b and Figure 6B The through holes 61T1a and 61T1b are connected to the conductor layer 61A. The through holes 60T2a and 60T2b are connected to the conductor layer 61A. Figure 6B The through holes 61T2a ​​and 61T2b are connected to the conductor layer 61B. Figure 6B The through holes 61T3a, 61T3b are shown connected.

[0076] Figure 6C: shows the pattern forming surface of the twelfth dielectric layer 62. A conductor layer 627 is formed on the pattern forming surface of the dielectric layer 62. The through holes 61T1a, 61T1b, 61T2a, 61T2b, 61T3a, and 61T3b are respectively connected to Figure 6C The through-holes 62T1a, 62T1b, 62T2a, 62T2b, 62T3a, 62T3b are shown connected.

[0077] Figure 7A The pattern forming surface of the thirteenth dielectric layer 63 is shown. Conductive layers 631, 637, 63A, 63B and a conductive layer 639 for inductors are formed on the pattern forming surface of the dielectric layer 63. Through holes 62T1a, 62T1b and Figure 7A The through holes 63T1a and 63T1b are connected to the conductor layer 63A. The through holes 62T2a and 62T2b are connected to the conductor layer 63A. Figure 7A The through holes 63T2a and 63T2b are connected to the conductor layer 63B. Figure 7A The through holes 63T3a, 63T3b are shown connected.

[0078] Figure 7B : shows the pattern forming surface of the fourteenth dielectric layer 64. Conductor layers 646, 64A, and 64B are formed on the pattern forming surface of the dielectric layer 64. Through holes 63T1a, 63T1b and Figure 7B The through holes 64T1a and 64T1b are connected to the conductor layer 64A. The through holes 63T2a and 63T2b are connected to the conductor layer 64A. Figure 7B The through holes 64T2a and 64T2b are connected to the conductor layer 64B. Figure 7B The through holes 64T3a, 64T3b are shown connected.

[0079] Figure 7C The pattern forming surface of the fifteenth dielectric layer 65 is shown. A conductor layer 652 for an inductor is formed on the pattern forming surface of the dielectric layer 65. The through holes 64T1a, 64T1b, 64T2a, 64T2b, 64T3a, and 64T3b are connected to the respective Figure 7C The through holes 65T1a, 65T1b, 65T2a, 65T2b, 65T3a, 65T3b are shown connected.

[0080] Figure 8A : shows the patterned surface of the sixteenth dielectric layer 66. The patterned surface of the dielectric layer 66 includes a conductor layer 662 for inductors and conductor layers 663, 66A, and 66B. The through holes 65T1a, 65T1b, and Figure 8A The through holes 66T1a and 66T1b are shown to be connected to the conductor layer 66A. The through holes 65T2a and 65T2b are shown to be connected to the conductor layer 66A. Figure 8AThe through holes 66T2a and 66T2b are connected to the conductor layer 66B. Figure 8A The through holes 66T3a, 66T3b are shown connected.

[0081] Figure 8B The pattern forming surface of the seventeenth dielectric layer 67 is shown. Conductive layers 672 and 673 for inductors are formed on the pattern forming surface of the dielectric layer 67. The through holes 66T1a, 66T1b, 66T2a, 66T2b, 66T3a, and 66T3b are connected to the inductors. Figure 8B The through holes 67T1a, 67T1b, 67T2a, 67T2b, 67T3a, 67T3b are shown connected.

[0082] Figure 8C : shows the patterned surface of the eighteenth dielectric layer 68. Conductive layers 682, 683, 685 and conductive layers 68A and 68B for inductors are formed on the patterned surface of the dielectric layer 68. Through holes 67T1a, 67T1b and Figure 8C The through holes 68T1a and 68T1b are shown to be connected to the conductor layer 68A. The through holes 67T2a and 67T2b are shown to be connected to the conductor layer 68A. Figure 8C The through holes 68T2a and 68T2b are connected to the conductor layer 68B. Figure 8C The through holes 68T3a, 68T3b are shown connected.

[0083] Figure 9A The patterned surface of the nineteenth dielectric layer 69 is shown. Conductive layers 693, 695, and 698, as well as conductive layers 69A and 69B, for the inductors are formed on the patterned surface of dielectric layer 69. Conductive layer 698 has a first end and a second end located on opposite sides of the longitudinal direction of conductive layer 698. A via 68T3a connects to a portion of conductive layer 698 near the first end. A via 68T3b connects to a portion of conductive layer 698 near the second end.

[0084] Through holes 68T1a, 68T1b and Figure 9A The through hole 69T1 is shown to be connected to the conductor layer 69A. The through holes 68T2a, 68T2b and Figure 9A Vias 69T2a, 69T2b are shown connected to the conductor layer 69B.

[0085] Figure 9B The pattern forming surface of the twentieth dielectric layer 70 is shown. Conductive layers 701, 703, 704, 705 and a conductive layer 70B for inductors are formed on the pattern forming surface of the dielectric layer 70. Through holes 69T2a, 69T2b and Figure 9BThe through holes 70T2a and 70T2b are connected to the conductor layer 70B. Figure 9B The through hole 70T1 is shown connected.

[0086] Figure 9C The patterned surface of the twenty-first dielectric layer 71 is shown. Conductive layers 711, 713, 714, 715 and a conductive layer 71B for inductors are formed on the patterned surface of the dielectric layer 71. Vias 70T2a, 70T2b and Figure 9C The through holes 71T2a and 71T2b are connected to the conductor layer 71B. Figure 9C The through hole 71T1 is shown connected.

[0087] Figure 10A The pattern forming surface of the twenty-second dielectric layer 72 is shown. Conductive layers 726 and 727 for inductors are formed on the pattern forming surface of the dielectric layer 72. The through holes 71T2a and 71T2b are connected to the Figure 10A The through-holes 72T2a and 72T2b are shown connected. The through-hole 71T1 is connected to the conductive layer 727.

[0088] Figure 10B The pattern forming surface of the twenty-third dielectric layer 73 is shown. Conductive layers 731, 733, 734, 735, 736, 737 and a conductive layer 73B for inductors are formed on the pattern forming surface of the dielectric layer 73. Through holes 72T2a, 72T2b and Figure 10B The illustrated vias 73T2a, 73T2b are connected to the conductor layer 73B.

[0089] Figure 10C The pattern forming surface of the twenty-fourth dielectric layer 74 is shown. Conductive layers 746 and 747 for inductors are formed on the pattern forming surface of the dielectric layer 74. The through holes 73T2a and 73T2b are respectively connected to Figure 10C The through holes 74T2a, 74T2b are shown connected.

[0090] Figure 11A The patterned surface of the twenty-fifth dielectric layer 75 is shown. Conductive layers 751, 753, 754, 755, 756, and 757 for inductors and a conductive layer 75B are formed on the patterned surface of dielectric layer 75. Conductive layer 755 is connected to conductive layer 75B. Vias 74T2a and 74T2b are connected to conductive layer 75B.

[0091] Figure 11B FIG. 3 shows the pattern-formed surface of the twenty-sixth dielectric layer 76. A mark 761 is formed on the pattern-formed surface of the dielectric layer 76.

[0092] Figure 2The stacked body 50 shown is constructed by stacking the first to twenty-sixth dielectric layers 51 to 76 in such a manner that the patterned surface of the first dielectric layer 51 becomes the bottom surface 50A of the stacked body 50 and the surface of the twenty-sixth dielectric layer 76 opposite to the patterned surface becomes the upper surface 50B of the stacked body 50.

[0093] Figure 12 5 shows the interior of the laminate 50 formed by stacking the first to twenty-sixth dielectric layers 51 to 76. Figure 12 As shown, inside the stacked body 50, there are stacked Figures 3A to 11B The multiple conductor layers and multiple through holes shown. Figure 12 Mark 761 is omitted.

[0094] Next, Figure 1 The components of the splitter 1 shown are the same as Figures 3A to 11B The corresponding relationship between the components within the laminate 50 shown in FIG. First, the components of the filter 10 are described. Inductor L11 is composed of inductor conductor layers 701, 711, 731, and 751 and a plurality of through-holes connecting these conductor layers. Inductor L12 is composed of inductor conductor layers 652, 662, 672, and 682 and a plurality of through-holes connecting these conductor layers.

[0095] Capacitor C11 is formed by conductor layers 571, 581, 591, and 601 and dielectric layers 57 to 59 between them. Capacitor C12 is formed by conductor layers 541, 551, 561, and 571 and dielectric layers 54 to 56 between them. Capacitor C13 is formed by conductor layers 541, 552, and 561 and dielectric layers 54 and 55 between them.

[0096] Next, the components of filter 20 are described. Inductor L21 is composed of inductor conductor layers 683, 693, 703, 713, 733, and 753, and a plurality of vias connecting these conductor layers. Inductor L22 is composed of inductor conductor layers 704, 714, 734, and 754, and a plurality of vias connecting these conductor layers.

[0097] Capacitor C21 is formed by conductor layers 553 and 562 and dielectric layer 55 therebetween. Capacitor C22 is formed by conductor layers 523, 531, 543, 554, and 563 and dielectric layers 54 and 55 therebetween. Capacitor C23 is formed by conductor layers 532, 542, 562, and 572 and dielectric layers 53 and 56 therebetween.

[0098] Next, a description will be given of the components of the filter 30. The inductor L31 is composed of inductor conductor layers 685, 695, 705, 715, 735, and 755 and a plurality of vias connecting these conductor layers.

[0099] Capacitor C31 is formed by conductor layers 555 and 564 and dielectric layer 55 therebetween. Capacitor C32 is formed by conductor layers 544 and 555 and dielectric layer 54 therebetween. Capacitor C33 is formed by conductor layers 533 and 544 and dielectric layer 53 therebetween.

[0100] Next, the components of filter 41 of filter unit 40 are described. Inductor L41 is composed of inductor conductor layers 726, 736, 746, and 756 and a plurality of vias connecting these conductor layers. Inductor L42 is composed of inductor conductor layers 727, 737, 747, and 757 and a plurality of vias connecting these conductor layers.

[0101] Capacitor C41 is formed by conductor layers 521 and 534 and dielectric layer 52 therebetween. Capacitor C42 is formed by conductor layers 534 and 545 and dielectric layer 53 therebetween. Capacitor C43 is formed by conductor layers 521 and 545 and dielectric layers 52 and 53 therebetween.

[0102] Capacitor C44 is formed by conductor layers 546 and 556 and dielectric layer 54 therebetween. Capacitor C45 is formed by conductor layers 556 and 565 and dielectric layer 55 therebetween. Capacitor C46 is formed by conductor layers 546 and 565 and dielectric layers 54 and 55 therebetween.

[0103] Next, the components of filter 42 of filter unit 40 are described. Inductor L43 is composed of inductor conductor layer 698 and through-holes 54T3b, 55T3b, 56T3a, 56T3b, 57T3a, 57T3b, 58T3a, 58T3b, 59T3a, 59T3b, 60T3a, 60T3b, 61T3a, 61T3b, 62T3a, 62T3b, 63T3a, 63T3b, 64T3a, 64T3b, 65T3a, 65T3b, 66T3a, 66T3b, 67T3a, 67T3b, 68T3a, and 68T3b. Inductor L44 is composed of inductor conductor layers 619 and 639 and a plurality of through-holes connecting these conductor layers. The inductor L45 is formed by the through-hole 52T5.

[0104] Capacitor C47 is formed by conductor layers 547 and 566 and dielectric layers 54 and 55 between them. Capacitor C48 is formed by conductor layers 535 and 548 and dielectric layer 53 between them. Capacitor C49 is formed by conductor layers 566 and 574 and dielectric layer 56 between them. Capacitor C50 is formed by conductor layers 537 and 547 and dielectric layer 53 between them. Capacitor C51 is formed by conductor layers 524 and 536 and dielectric layer 52 between them. Capacitor C52 is formed by conductor layers 522 and 537 and dielectric layer 52 between them.

[0105] Next, refer to Figures 3A to 13 The structural features of the branching filter 1 of this embodiment will be described. Figure 13 This is a top view showing a portion of the interior of the stack 50. The stack 50 includes a first region R1 and a second region R2 adjacent to each other, and a third region R3 adjacent to the second region R2. The first to third regions R1-R3 are each defined as a three-dimensional area for arranging multiple components within the stack 50.

[0106] The first region R1 is primarily used to arrange the multiple elements that comprise filter 20. The second region R2 is primarily used to arrange the multiple elements that comprise filters 41 and 42 of filter unit 40. The third region R3 is primarily used to arrange the multiple elements that comprise filter 30. Filter 20 is substantially arranged in the first region R1. Filters 41 and 42 are substantially arranged in the second region R2. Filter 30 is substantially arranged in the third region R3.

[0107] The first region R1 includes the entirety of the inductors L21 and L22, the second region R2 includes the entirety of the inductors L41 to L45, and the third region includes the entirety of the inductor L31.

[0108] The plurality of elements constituting the filter 10 are arranged in regions other than the first to third regions R1 to R3 within the laminate 50. The filter 10 is substantially arranged in regions other than the first to third regions R1 to R3 within the laminate 50.

[0109] The laminate 50 further includes a structure 81 disposed near the boundary between the first region R1 and the second region R2, and a structure 82 disposed near the boundary between the second region R2 and the third region R3. In this embodiment, the structure 81 is specifically disposed in the second region R2, and the structure 82 is disposed in the third region R3. Furthermore, the structures 81 and 82 are each connected to a grounding member.

[0110] The structure 81 includes a plurality of first partial structures stacked in a direction parallel to the stacking direction T. Each of the plurality of first partial structures includes a plurality of first vias and a first conductor layer connecting the plurality of first vias. In this embodiment, the structure 81 includes through holes 52T1a, 52T1b, 53T1a, 53T1b, 54T1a, 54T1b, 55T1a, 55T1b, 56T1a, 56T1b, 57T1a, 57T1b, 58T1a, 58T1b, 59T1a, 59T1b, 60T1a, 60T1b, 61T1a, 61T1b, 62T1a, 62T1b, 63T1a, 63T1b, 64T1a, 64T1b, 65T1a, 65T1b, 66T1a, 66T1b, 67T1a, 67T1b, 68T1a, and 68T1b as multiple first through holes constituting multiple first partial structures. Furthermore, the structure 81 includes the conductor layers 52A, 53A, 55A, 57A, 59A, 61A, 63A, 64A, 66A, 68A, and 69A as a plurality of first conductor layers constituting a plurality of first partial structures.

[0111] Conductive layer 52A connects through-holes 52T1a and 52T1b located at the same position in stacking direction T. Through-holes 52T1a and 52T1b and conductive layer 52A constitute a single first partial structure. Similarly, two through-holes located at the same position in stacking direction T among the plurality of first through-holes and the conductive layer connecting these two through-holes constitute a single first partial structure. Structural body 81 is formed by stacking a plurality of first partial structures constructed in this manner.

[0112] Two adjacent first partial structures in the stacking direction T among the plurality of first partial structures may be connected directly or via a through-hole. Here, focus is placed on the first partial structure including the conductor layer 55A. Examples of the first partial structure including the conductor layer 55A include a first partial structure including the through-holes 54T1a, 54T1b and the conductor layer 55A, and a first partial structure including the through-holes 55T1a, 55T1b and the conductor layer 55A. It can be said that the first partial structure including the through-holes 54T1a, 54T1b and the conductor layer 55A is directly connected to the first partial structure including the through-holes 53T1a, 53T1b and the conductor layer 53A. It can also be said that the first partial structure including the through-holes 55T1a, 55T1b and the conductor layer 55A is directly connected to the first partial structure including the through-holes 53T1a, 53T1b and the conductor layer 53A via the through-holes 54T1a, 54T1b.

[0113] The structure 81 is connected to the ground via the electrode 111 , two through-holes 51T1 a , and the conductive layer 524 , and is also connected to the ground via the electrode 117 , two through-holes 51T1 b , and the conductive layer 523 .

[0114] The structure 81 has a first end and a second end located on opposite sides of each other in the stacking direction T. In this embodiment, the conductive layer 52A is substantially the first end of the structure 81 , and the conductive layer 69A is substantially the second end of the structure 81 .

[0115] The structure 82 includes a plurality of second partial structures stacked in a direction parallel to the stacking direction T. The plurality of second partial structures each include a plurality of second through holes and a second conductor layer connecting the plurality of second through holes. In this embodiment, the structure 82 includes through holes 53T2a, 53T2b, 54T2a, 54T2b, 55T2a, 55T2b, 56T2a, 56T2b, 57T2a, 57T2b, 58T2a, 58T2b, 59T2a, 59T2b, 60T2a, 60T2b, 61T2a, 61T2b, 62T2a, 62T2b, 63T2a, 63T2b, 64T2a, 65T2b, 66T2a, 67T2b, 68T2a, 69T2b, 70T2a, 71T2b, 72T2a, 73T2b, 74T2a, 75T2b, 76T2a, 77T2b, 78T2a, 79T2b, 80T2a, 81T2b, 82T2a, 83T2b, 84T2a, 85T2b, 86T2a, 86T2b, 87T2a, 87T2b, 88T2a, 88T2b, 89T2a, 90T2b, 91T2a, 91T2b, 92T2a, 92T2b, 93T2a, 93T2b, 94T2a, 95T2b, 96T2a, 96T2b, 97T2a, 97T2b 4T2a, 64T2b, 65T2a, 65T2b, 66T2a, 66T2b, 67T2a, 67T2b, 68T2a, 68T2b, 69T2a, 69T2b, 70T2a, 70T2b, 71T2a, 71T2b, 72T2a, 72T2b, 73T2a, 73T2b, 74T2a, and 74T2b are the plurality of second through holes constituting the plurality of second partial structures. Furthermore, the structure 82 includes the conductor layers 53B, 55B, 57B, 59B, 61B, 63B, 64B, 66B, 68B, 69B, 70B, 71B, 73B, and 75B as the plurality of second conductor layers constituting the plurality of second partial structures.

[0116] Conductor layer 53B connects through-holes 53T2a and 53T2b located at the same position in stacking direction T. Through-holes 53T2a and 53T2b and conductor layer 53B constitute a second partial structure. Similarly, two through-holes located at the same position in stacking direction T among the plurality of second through-holes and the conductor layer connecting these two through-holes constitute a second partial structure. Structural body 82 is formed by stacking a plurality of second partial structures thus constructed.

[0117] Similar to the plurality of first partial structures, two second partial structures adjacent to each other in the stacking direction T among the plurality of second partial structures may be connected directly or via a through-hole.

[0118] The structural body 82 is connected to the ground via the electrode 113 , the two through-holes 51T 2 , the conductive layer 525 , the two through-holes 52T 2 , and the conductive layer 537 .

[0119] The structure 82 has a first end and a second end located on opposite sides of each other in the stacking direction T. In this embodiment, the conductive layer 53B is substantially the first end of the structure 82 , and the conductive layer 75B is substantially the second end of the structure 82 .

[0120] Next, the relationship between the structure 81 and the multiple components disposed within the laminate 50 will be described. The inductor L42 of the filter 41 of the filter unit 40 is disposed in the second region R2. The inductor conductor layer 727 constituting the inductor L42 is connected to the conductor layer 69A constituting the structure 81 via vias 69T1, 70T1, and 71T1. The conductor layer 69A is located at the end of the structure 81 in the Z direction. The conductor layer 727 and the conductor layer 69A are disposed at different positions in the stacking direction T. Furthermore, when viewed in the stacking direction T, a portion of the inductor L42 overlaps with the structure 81.

[0121] The inductor L22 of the filter 20 is arranged in the vicinity of the structure 81 in the first region R1. When viewed in the stacking direction T, the inductor L22 and the inductor L42 are arranged such that at least a portion of the structure 81 is interposed between the inductor L22 and the inductor L42. In this embodiment, in particular, a portion of the structure 81 is interposed between the inductor L22 and the inductor L42.

[0122] The structure 81 is also connected to a conductive layer that forms a component other than the inductor L42. In this embodiment, the structure 81 is connected to the following: conductive layers 523, 543, and 563, which form the capacitor C22 of the filter 20; and conductive layer 524, which forms the capacitor C51 of the filter 42 of the filter unit 40. The conductive layers 523, 543, and 563 each extend from the structure 81 to the first region R1. The conductive layers 543 and 563 are connected to the structure 81 between the first end (conductive layer 52A) and the second end (conductive layer 69A) of the structure 81.

[0123] Next, the relationship between the structure 82 and the multiple components provided within the laminate 50 will be described. The inductor L31 of the filter 30 is disposed in the third region R3. The inductor conductor layer 755 constituting the inductor L31 is connected to the conductor layer 75B constituting the structure 82. The conductor layer 75B is located at the end of the structure 82 in the Z direction. The conductor layer 755 and the conductor layer 75B are disposed at the same position in the stacking direction T. In this embodiment, in particular, the conductor layer 755 is also located at the end of the inductor L31 in the Z direction.

[0124] In the area near the structure 82 in the second region R2, the inductor L41 of the filter 41 of the filter unit 40 is arranged. When viewed in the stacking direction T, the inductors L31 and L41 are arranged such that at least a portion of the structure 82 is interposed between the inductors L31 and L41. In this embodiment, the entire structure 82 is interposed between the inductors L31 and L41.

[0125] The structure 82 is also connected to a conductive layer that forms a component other than the inductor L31. In this embodiment, the structure 82 is connected to the following: conductive layers 541 and 561, which form capacitors C12 and C13 of the filter 10; conductive layer 574, which forms capacitor C49 of the filter 42 of the filter unit 40; and conductive layer 537, which forms capacitors C50 and C52 of the filter 42 of the filter unit 40. The conductive layer 574 extends from the structure 82 to the second region R2. The conductive layers 541, 561, and 574 are connected to the structure 82 between the first end (conductive layer 53B) and the second end (conductive layer 75B) of the structure 82.

[0126] Next, the function and effects of the splitter 1 of this embodiment will be described. In this embodiment, the structure 81 is located near the boundary between the first region R1 and the second region R2. The inductor L42 located in the second region R2 is connected to the structure 81. Thus, according to this embodiment, the coupling between the inductor L42 and the components located in the first region R1 prevents degradation of the isolation between the first region R1 and the second region R2. As a result, according to this embodiment, isolation between the first region R1 and the second region R2 can be maintained.

[0127] In this embodiment, first region R1 is primarily used to arrange the multiple components that comprise filter 20. Second region R2 is primarily used to arrange the multiple components that comprise filters 41 and 42 of filter unit 40. Inductor L22 of filter 20 is arranged near structure 81 in first region R1, while inductor L42 of filter 41 of filter unit 40 is arranged near inductor L22 in second region R2. Therefore, according to this embodiment, isolation between filter 20 and filter 41 can be ensured by structure 81.

[0128] Similarly, in this embodiment, the structure 82 is located near the boundary between the second region R2 and the third region R3. The inductor L31 located in the third region R3 is connected to the structure 82. Thus, according to this embodiment, the coupling between the inductor L31 and the components located in the second region R2 prevents degradation of the isolation between the second region R2 and the third region R3. As a result, according to this embodiment, isolation between the second region R2 and the third region R3 can be maintained.

[0129] In this embodiment, third region R3 is particularly useful for arranging the multiple components that comprise filter 30. Inductor L41 of filter 41 of filter unit 40 is arranged near structure 82 in second region R2, while inductor L31 of filter 30 is arranged near inductor L41 in third region R3. Therefore, according to this embodiment, isolation between filter 30 and filter 41 can be ensured by structure 82.

[0130] The above-mentioned effects will be described in detail below with reference to the simulation results. In the simulation, a model of the embodiment and a model of the comparative example were used. The model of the embodiment is a model of the splitter 1 of the present embodiment. The model of the comparative example is a model of the splitter of the comparative example. The splitter of the comparative example includes a first columnar conductor instead of the structure 81 of the present embodiment, and includes a second columnar conductor instead of the structure 82 of the present embodiment. The first columnar conductor and the second columnar conductor are each formed by connecting a plurality of through holes in series and extending in a direction parallel to the stacking direction T.

[0131] In the simulation, the frequency characteristics of the isolation between the first signal terminal 3 and the third signal terminal 5 and the frequency characteristics of the isolation between the second signal terminal 4 and the third signal terminal 5 were obtained for each of the model of the embodiment and the model of the comparative example.

[0132] The isolation between two terminals is defined as follows: When a high-frequency signal with power P1 is input to one of the two terminals, the power of the signal output from the other terminal is P2. Isolation I is defined by the following equation (1).

[0133] I=-10log(P2 / P1)…(1)

[0134] Figure 14 3 is a characteristic diagram showing the frequency characteristics of the isolation between the first signal terminal 3 and the third signal terminal 5 . Figure 15 : is a characteristic diagram showing the frequency characteristics of the isolation between the second signal terminal 4 and the third signal terminal 5. Figure 14 as well as Figure 15 In the figure, the horizontal axis represents frequency and the vertical axis represents isolation. Figure 14 as well as Figure 15 In FIG. 1 , the curves denoted by reference numerals 91 and 93 represent the frequency characteristics of the isolation of the model of the embodiment, and the curves denoted by reference numerals 92 and 94 represent the frequency characteristics of the isolation of the model of the comparative example.

[0135] according to Figure 14 It can be seen that within the frequency range of 4900 MHz to 7125 MHz, the isolation of the model of the embodiment is greater than that of the model of the comparative example. This result shows that according to this embodiment, the isolation between the filter 20 and the filter 41 can be ensured by the structure 81, resulting in a sufficient increase in the isolation between the first signal terminal 3 and the third signal terminal 5.

[0136] In addition, according to Figure 14 It can be seen that within the frequency range of 2400 MHz to 2500 MHz, the isolation of the model of the embodiment is greater than that of the model of the comparative example. This result shows that according to this embodiment, the isolation between the filter 30 and the filter 41 can be ensured by the structure 82, and as a result, the isolation between the second signal terminal 4 and the third signal terminal 5 can be sufficiently increased.

[0137] Next, other effects of this embodiment are described. Figure 1 As shown, the inductor L31 is connected to the ground. In this embodiment, the inductor L31 is connected to the structure 82, which is in turn connected to the ground. Therefore, according to this embodiment, the number of conductors in the laminate 50 can be reduced compared to a case where the inductor L31 is connected to the ground instead of the structure 82. As a result, according to this embodiment, the splitter 1 can be miniaturized.

[0138] Furthermore, in this embodiment, a conductive layer forming a component other than the inductor L31 is also connected to the structure 82. Therefore, according to this embodiment, the number of conductors in the laminate 50 can be reduced compared to a case where the component other than the inductor L31 is connected to a ground instead of the structure 82. Consequently, according to this embodiment, the splitter 1 can be miniaturized.

[0139] The above description of the inductor L31 and the structure 82 also applies to the inductor L42 and the structure 81 .

[0140] In this embodiment, a portion of the inductor L42 overlaps the structure 81 when viewed from the stacking direction T. Therefore, according to this embodiment, the branching filter 1 can be miniaturized compared to a case where the inductor L42 does not overlap the structure 81 when viewed from the stacking direction T.

[0141] In the present embodiment, a portion of the inductor L41 overlaps the inductor L43 when viewed in the stacking direction T. Therefore, according to the present embodiment, the branching filter 1 can be miniaturized compared to a case where the inductor L41 does not overlap the inductor L43 when viewed in the stacking direction T.

[0142] The present invention is not limited to the above-described embodiment, and various modifications are possible. For example, the stacked demultiplexer of the present invention is not limited to a triplexer, but may be a duplexer, a quadplexer, or other demultiplexer.

[0143] Furthermore, the structure 81 may be disposed in the first region R1 or overlapped with the boundary between the first region R1 and the second region R2. Similarly, the structure 82 may be disposed in the second region R2 or overlapped with the boundary between the second region R2 and the third region R3.

[0144] As described above, the stacked splitter of the present invention comprises: a common terminal; a first signal terminal; a second signal terminal; a first path connecting the common terminal and the first signal terminal; a second path connecting the common terminal and the second signal terminal; a first inductor disposed between the common terminal and the second signal terminal in a circuit structure; and a laminated body that integrates the common terminal, the first signal terminal, the second signal terminal, the first path, the second path, and the first inductor and includes a plurality of stacked dielectric layers. The first path is configured to selectively pass signals having frequencies within a first passband. The second path is configured to selectively pass signals having frequencies within a second passband that is different from the first passband.

[0145] The laminate further includes a first region and a second region adjacent to each other within the laminate, and includes a first structure disposed near a boundary between the first region and the second region and connected to a grounding member. The first structure includes a plurality of first partial structures stacked in a direction parallel to the stacking direction of the plurality of dielectric layers. The plurality of first partial structures each include a plurality of first through-holes and a first conductive layer connecting the plurality of first through-holes. The first inductor is disposed in the second region and connected to the first structure.

[0146] The stacked waveguide of the present invention may further include: a first filter disposed in the first path; and a second filter disposed in the second path. The first filter may be disposed in the first region. The second filter may include a first inductor and be disposed in the second region. The first filter and the second filter may both be high-pass filters. Alternatively, the first filter may be a low-pass filter, and the second filter may be a high-pass filter.

[0147] In addition, the stacked wave splitter of the present invention may further include: a third signal terminal; a third path connecting the common terminal and the third signal terminal; and a second inductor, which is arranged between the common terminal and the third signal terminal in the circuit structure. The third path can be configured to selectively allow signals with frequencies within a third passband to pass through, and the frequencies within the third passband are different from those in the first passband and the second passband. The stacked body may further include a third region adjacent to the second region in the stacked body, and include a second structure, which is arranged near the boundary between the second region and the third region and is connected to the grounding member. The second structure may include a plurality of second partial structures stacked in a direction parallel to the stacking direction. The plurality of second partial structures may respectively include a plurality of second through holes and a second conductor layer connecting the plurality of second through holes. The second inductor may be arranged in the third region and connected to the second structure.

[0148] In the case where the stacked splitter of the present invention includes a third path and a second inductor, and the stack includes a third region, the stacked splitter of the present invention may further include: a first filter disposed in the first path; a second filter disposed in the second path; and a third filter disposed in the third path. The first filter may be disposed in the first region. The second filter may include the first inductor and be disposed in the second region. The third filter may include the second inductor and be disposed in the third region. The first filter may be a low-pass filter. The second and third filters may be high-pass filters.

[0149] In the stacked waveguide of the present invention, a specific conductor layer may be connected to the first structure to form an element different from the first inductor. The first structure may have a first end and a second end located on opposite sides of each other in the stacking direction. The specific conductor layer may be connected to the first structure between the first end and the second end. The specific conductor layer may include a capacitor conductor layer to form a capacitor. The first structure may be arranged in the second region. The specific conductor layer may extend from the first structure to the first region.

[0150] Furthermore, in the stacked duplexer of the present invention, a portion of the first inductor may overlap with the first structure when viewed in the stacking direction.

[0151] In the stacked branching filter of the present invention, the first inductor may include an inductor conductor layer. The plurality of first partial structures may include a specific first partial structure located at an end in a direction parallel to the stacking direction. The inductor conductor layer and the first conductor layer of the specific first partial structure may be arranged at the same position in the stacking direction.

[0152] Furthermore, the multilayer branching filter of the present invention may further include another inductor, which is provided between the common terminal and the first signal terminal in terms of the circuit structure. The other inductor may be arranged in the first region.

[0153] It is clear from the above description that the present invention can be implemented in various forms and modifications. Therefore, within the scope of the equivalents of the claims, the present invention can be implemented in forms other than the above-described embodiment.

Claims

1. A stacked wave splitter, characterized in that: have: common terminal; a first signal terminal; a second signal terminal; a first path connecting the common terminal and the first signal terminal; a second path connecting the common terminal and the second signal terminal; a first inductor, which is arranged between the common terminal and the second signal terminal in a circuit structure; as well as a laminated body for integrating the common terminal, the first signal terminal, the second signal terminal, the first path, the second path, and the first inductor, and including a plurality of laminated dielectric layers; The first path is configured to selectively pass signals having frequencies within a first passband. The second path is configured to selectively pass signals with frequencies within a second passband, the frequencies within the second passband being different from those of the first passband. The stacked body further includes a first region and a second region adjacent to each other in the stacked body, and includes a first structure, the first structure being arranged near a boundary between the first region and the second region and connected to a grounding member. The first structure includes a plurality of first partial structures stacked in a direction parallel to the stacking direction of the plurality of dielectric layers. The plurality of first partial structures respectively include a plurality of first through holes and a first conductor layer connecting the plurality of first through holes. The first inductor is disposed in the second region and connected to the first structure.

2. The stacked wave splitter according to claim 1, wherein: The device further comprises: a first filter provided in the first path; and a second filter disposed in the second path, The first filter is arranged in the first area, The second filter includes the first inductor and is disposed in the second region.

3. The stacked wave splitter according to claim 2, wherein: The first filter and the second filter are both high-pass filters.

4. The stacked wave splitter according to claim 2, wherein: The first filter is a low-pass filter, The second filter is a high pass filter.

5. The stacked wave splitter according to claim 1, wherein: Also provided: a third signal terminal; a third path connecting the common terminal and the third signal terminal; and a second inductor, which is arranged between the common terminal and the third signal terminal in a circuit structure; The third path is configured to selectively pass signals having frequencies within a third passband, wherein the frequencies within the third passband are different from those of the first passband and the second passband. The laminate further includes a third region adjacent to the second region within the laminate, and includes a second structure, the second structure being arranged near a boundary between the second region and the third region and connected to the grounding member. The second structure includes a plurality of second partial structures stacked in a direction parallel to the stacking direction, The plurality of second partial structures respectively include a plurality of second through holes and a second conductor layer connecting the plurality of second through holes. The second inductor is disposed in the third region and connected to the second structure.

6. The stacked wave splitter according to claim 5, wherein: The device further comprises: a first filter disposed in the first path; a second filter, disposed in the second path; as well as a third filter, which is provided in the third path, The first filter is arranged in the first area, The second filter includes the first inductor and is disposed in the second region. The third filter includes the second inductor and is disposed in the third region.

7. The stacked wave splitter according to claim 6, wherein: The first filter is a low-pass filter, The second filter and the third filter are high-pass filters.

8. The stacked wave splitter according to claim 1, wherein: A specific conductor layer constituting an element different from the first inductor is connected to the first structure.

9. The stacked wave splitter according to claim 8, wherein: The first structure has a first end and a second end located on opposite sides of each other in the stacking direction. The specific conductor layer is connected to the first structure between the first end and the second end.

10. The stacked wave splitter according to claim 8, wherein: The specific conductive layer includes a capacitor conductive layer for constituting a capacitor.

11. The stacked wave splitter according to claim 8, wherein: The first structure is arranged in the second region, The specific conductor layer extends from the first structure to the first region.

12. The stacked wave splitter according to claim 1, wherein: When viewed in the stacking direction, a portion of the first inductor overlaps with the first structure.

13. The stacked wave splitter according to claim 1, wherein: The first inductor comprises an inductor conductor layer, The plurality of first partial structures include a specific first partial structure located at an end portion in a direction parallel to the stacking direction. The inductor conductive layer and the first conductive layer of the specific first partial structure are arranged at the same position in the stacking direction.

14. The stacked wave splitter according to claim 1, wherein: Another inductor is further provided, wherein the other inductor is provided between the common terminal and the first signal terminal in terms of circuit structure, The other inductor is disposed in the first region.

Images