Plasma source based on ceramic co-firing

Abstract

The invention relates to a plasma source based on ceramic co-firing. The plasma source comprises one or more gas inlet channels; the co-fired ceramic plate is provided with a plurality of through holes, and the through holes are communicated with the one or more air inlet channels; and one end of each air inlet piece is connected with the air inlet channels. The metal back plate is attached to or bonded with the co-fired ceramic plate, and the air inlet channel is located in the metal back plate; the diffusion cavity is positioned between the metal back plate and the co-fired ceramic plate or inside the co-fired ceramic plate, and is communicated with the air inlet channel and the through hole; and the metal back plate is provided with a cooling channel.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma sources, and in particular to a plasma source based on ceramic co-firing. Background Art

[0002] Semiconductor equipment extensively utilizes plasma sources. The most popular plasma sources are capacitively coupled plasma (CCP) and inductively coupled plasma (ICP). These two technologies require the use of capacitor plates and inductive coils to excite the plasma. In existing technologies, the capacitor plates of the plasma source are typically the metal showerhead itself, while the inductive coils are typically hollow oxygen-free copper tubes cooled by cooling water.

[0003] For capacitor plates, the biggest problem is metal ablation caused by plasma, which produces metal contamination that pollutes process growth. In addition, ablation affects the aperture of the metal shower head, resulting in changes in flow rate and final process results.

[0004] The main problem with inductive coils is that traditional water-cooled coils have a certain diameter and a minimum bending radius, making it impossible to process smaller micro-coils, which hinders the miniaturization and arraying of ICP plasma sources. Miniaturized arrays are an important way to obtain uniform plasma over a large area, and can further reduce the internal volume of the reaction chamber. Reducing the internal volume is of great significance to the performance of surface control processes such as atomic layer deposition (ALD) and atomic layer etching (ALE). In addition, some applications hope that the ICP coil can be further inserted into the processing chamber, that is, to reduce the distance between the ICP coil and the reaction chamber, but traditional water-cooled coils are copper coils, and copper metal is a material that is not desired to appear inside the processing chamber in semiconductors. Summary of the Invention

[0005] To solve at least some of the above problems in the prior art, the present invention provides a plasma source based on ceramic co-firing, comprising:

[0006] one or more air intake passages;

[0007] a co-fired ceramic plate having a plurality of through-holes communicating with one or more air inlet passages; and

[0008] A plurality of air inlet members have one end connected to the plurality of air inlet channels.

[0009] Furthermore, it also includes a metal back plate, which is attached, bonded or bonded to the co-fired ceramic plate, and the air intake channel is located in the metal back plate.

[0010] Furthermore, a diffusion cavity is located between the metal back plate and the co-fired ceramic plate or inside the co-fired ceramic plate, and is communicated with the air inlet channel and the through hole.

[0011] Furthermore, the metal back plate has a cooling channel.

[0012] Furthermore, the co-fired ceramic plate includes a ceramic plate and a plurality of radio frequency electrodes located in the ceramic plate;

[0013] The ceramic plate includes a first ceramic plate and a second ceramic plate, wherein the first ceramic plate is adjacent to the diffusion cavity, the second ceramic plate is away from the diffusion cavity, and the radio frequency electrode is located between the first ceramic plate and the second ceramic plate.

[0014] Furthermore, the radio frequency electrode and / or microwave electrode is formed by printing or 3D printing and then co-fired with ceramics; or

[0015] The radio frequency electrode and / or microwave electrode is formed by sputtering, evaporation, chemical plating, electroplating or electroforming; or

[0016] The radio frequency electrode and / or microwave electrode is made of metal, carbon, carbide or doped conductive ceramic.

[0017] Furthermore, the plurality of radio frequency electrodes and / or microwave electrodes are connected to one or more radio frequency generators and / or microwave generators; and / or

[0018] The metal back plate is grounded, and the metal back plate and the plurality of radio frequency electrodes form an electrode pair.

[0019] Furthermore, the co-fired ceramic plate includes a ceramic plate and a plurality of electrodes or coils located in the ceramic plate;

[0020] The ceramic plate includes a first ceramic plate and a second ceramic plate, wherein the first ceramic plate is adjacent to the diffusion cavity, the second ceramic plate is away from the diffusion cavity, and the electrode or the coil is located between the first ceramic plate and the second ceramic plate.

[0021] Furthermore, the plurality of electrodes or coils are connected to one or more radio frequency generators; and / or

[0022] The thickness of the coil or electrode is less than 5 mm.

[0023] Furthermore, the material of the ceramic plate is aluminum oxide, silicon oxide, zirconium oxide, yttrium oxide, beryllium oxide, pyrolytic boron nitride, hot-pressed aluminum nitride, silicon nitride or silicon carbide; and / or

[0024] A pressure sensor and / or a temperature sensor and / or a heater are provided in the ceramic plate; and / or

[0025] The ceramic plate has a gas channel therein.

[0026] Furthermore, the number of the diffusion chambers is one or more, wherein the plurality of diffusion chambers corresponds to the plurality of air inlet members; and / or

[0027] The plurality of gas inlets are connected to one or more mass flow controllers or valves; and / or

[0028] A pressure sensor is provided in the diffusion chamber and / or in the air intake member and / or at the air intake passage of the metal back plate; and / or

[0029] A temperature sensor is arranged in the metal back plate.

[0030] Furthermore, a groove is provided on a side of the metal back plate facing the co-fired ceramic plate. After the metal back plate is fixedly connected to the co-fired ceramic plate, the groove forms a diffusion cavity.

[0031] The present invention also provides a plasma processing device, comprising:

[0032] Plasma sources based on ceramic co-firing; and

[0033] The reaction chamber is provided with a supporting structure inside, and the supporting structure is configured to support the wafer. The supporting structure is an electrostatic chuck, a wafer boat, a heater or other wafer supporting mechanism.

[0034] The present invention also provides a microwave plasma source based on ceramic co-firing, comprising:

[0035] a metal backplate with multiple air intake channels and grooves;

[0036] A co-fired ceramic microstrip microwave antenna array layer, mounted in the groove of the metal backplate, the co-fired ceramic microstrip microwave antenna array layer comprising a ceramic microwave distribution network layer and a microstrip microwave antenna array, wherein the microstrip microwave antenna array is located in the ceramic microwave distribution network layer with its lower surface exposed;

[0037] a plurality of air inlet members, one end of which is connected to the plurality of air inlet channels;

[0038] A cooling channel is located inside the metal back plate.

[0039] Furthermore, a gas diffusion channel and a downward via are provided between the back of the microstrip microwave antenna array and the metal back plate; and / or

[0040] The plurality of gas inlets are connected to one or more mass flow controllers; and / or

[0041] The ceramic microwave distribution network layer is connected to the microwave generator.

[0042] Furthermore, the metal back plate includes a first metal back plate and a second metal back plate that are embedded, and the first metal back plate is located below the second metal back plate;

[0043] The groove of the metal back plate includes a hollow portion of the first metal back plate and a groove portion of the second metal back plate.

[0044] The present invention has at least the following beneficial effects:

[0045] The plasma source based on ceramic co-firing of the present invention comprises a metal back plate and a co-fired ceramic plate, wherein a plurality of through holes penetrate the co-fired ceramic plate, and through holes are formed in the ceramic material as spray holes, thereby avoiding the problem of metal ablation;

[0046] In the ceramic co-fired plasma source of the present invention, cooling channels are integrated on the metal backing plate for temperature regulation. The coil in the co-fired ceramic plate does not have a cooling function. Its thickness is in the millimeter level or even micrometer level, and the overall thickness of the metal backing plate and the co-fired ceramic plate is less than 2 cm, thus achieving miniaturization of the plasma source.

[0047] The plasma source based on ceramic co-fired of the present invention has multiple gas inlet components, each gas inlet component corresponds to a coil in the co-fired ceramic plate, realizing the plasma source array. The multiple gas inlet components can be connected to a mass flow controller for unified mass flow regulation, or each gas inlet component can be connected to a mass flow controller to achieve independent mass flow regulation.

[0048] The plasma source based on ceramic co-firing of the present invention is a miniaturized and arrayed plasma source, which can obtain uniform plasma over a large area;

[0049] The co-fired ceramic plate in the ceramic co-fired plasma source of the present invention includes a first ceramic plate, a second ceramic plate and a plurality of coils located therebetween. The second ceramic plate is adjacent to the reaction chamber. The coils are at a short distance from the adjacent reaction chamber and are not exposed to the reaction gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] To further illustrate the above and other advantages and features of various embodiments of the present invention, a more detailed description of various embodiments of the present invention will be presented with reference to the accompanying drawings. It will be understood that these drawings depict only typical embodiments of the present invention and are not to be considered as limiting the scope thereof. In the drawings, for clarity, identical or corresponding parts will be represented by the same or similar reference numerals.

[0051] Figure 1 A cross-sectional schematic diagram of a capacitively coupled plasma source based on ceramic co-firing according to an embodiment of the present invention is shown.

[0052] Figure 2A The figure shows a cross-sectional structural diagram of an inductively coupled plasma source based on ceramic co-firing according to an embodiment of the present invention.

[0053] Figure 2B A schematic three-dimensional cross-sectional view of an inductively coupled plasma source body based on ceramic co-firing according to an embodiment of the present invention is shown.

[0054] Figure 2C A perspective view of an inductively coupled plasma source body based on ceramic co-firing according to one embodiment of the present invention is shown.

[0055] Figure 2D A perspective view of a metal back plate according to one embodiment of the present invention is shown.

[0056] Figure 2E and 2F A perspective view illustrating a co-fired ceramic plate according to one embodiment of the present invention is shown.

[0057] Figure 2G and 2H A perspective view illustrating a co-fired ceramic plate according to another embodiment of the present invention is shown.

[0058] Figure 2I A perspective view of an inductively coupled plasma source body based on ceramic co-firing according to another embodiment of the present invention is shown.

[0059] Figure 3A A schematic cross-sectional view of a ceramic co-fired inductively coupled plasma (atomic layer) deposition furnace tube is shown according to one embodiment of the present invention.

[0060] Figure 3B A schematic cross-sectional view of a vertical ceramic co-fired inductively coupled plasma (atomic layer) deposition furnace tube according to one embodiment of the present invention is shown.

[0061] Figure 4 A cross-sectional schematic diagram of an inductively coupled plasma source based on ceramic co-firing according to one embodiment of the present invention is shown.

[0062] Figure 5 FIG. 4 shows a schematic diagram of pressure flow control in a choked flow mode according to an embodiment of the present invention.

[0063] Figure 6 FIG. 4 shows a schematic diagram of pressure flow control in a non-blocking flow mode according to an embodiment of the present invention.

[0064] Figure 7 A schematic diagram of the fluid and pressure sensor is shown.

[0065] Figure 8 A cross-sectional schematic diagram of a microwave plasma source based on ceramic co-firing according to an embodiment of the present invention is shown.

[0066] Figure 9A A schematic diagram of a microwave microstrip antenna array is shown. Figure 9BA schematic structural diagram of an antenna unit is shown.

[0067] Figure 10 A cross-sectional schematic diagram of a microwave plasma source based on ceramic co-firing according to another embodiment of the present invention is shown. DETAILED DESCRIPTION

[0068] It should be noted that components in the drawings may be shown exaggerated for illustrative purposes and are not necessarily true to scale.

[0069] In the present invention, each embodiment is only intended to illustrate the aspects of the present invention and should not be construed as limiting.

[0070] In the present invention, unless otherwise specified, the quantifiers "a" and "an" do not exclude the presence of multiple elements.

[0071] It should also be pointed out that in the embodiments of the present invention, for the sake of clarity and simplicity, only a portion of the parts or components may be shown, but a person skilled in the art will understand that under the teachings of the present invention, the required parts or components may be added according to the needs of the specific scenario.

[0072] It should also be pointed out that within the scope of the present invention, the terms "same", "equal", "equal to" and the like do not mean that the two values ​​are absolutely equal, but allow a certain reasonable error, that is, the terms also cover "substantially the same", "substantially equal", and "substantially equal to".

[0073] It should also be noted that in the description of the present invention, the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate description and simplify the present invention. They do not explicitly or implicitly state that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0074] In addition, the embodiments of the present invention describe the process steps in a specific order, but this is only for the convenience of distinguishing the steps, and does not limit the order of the steps. In different embodiments of the present invention, the order of the steps can be adjusted according to the adjustment of the process.

[0075] Co-firing is a commonly used sintering process for multilayer ceramics, allowing for internal metal wiring and surface metallization. Co-fired ceramics are generally categorized into two types, depending on the sintering temperature: HTCC (high-temperature co-firing) and LTCC (low-temperature co-firing). Co-firing is a common metallization method used in electronic packaging.

[0076] The co-firing process generally includes: mixing - casting - drying - punching - printing slurry - through-hole filling - lamination, heating, extrusion - slicing - sintering - welding - inspection.

[0077] The multi-layer one-shot sintering process includes: material mixing - tape casting - printing - lamination - sintering - inspection. The multi-piece sintering bonding or bonding process includes: cleaning - bonding - surface treatment - inspection.

[0078] In addition to the above processes, there are also changes in the technical path of forming blank materials through 3D printing, or 3D printing metal wiring, electroforming or electroplating wiring.

[0079] However, all of these technologies ultimately require the co-sintering of ceramic and metal, which is the origin of the names of the co-fired and cosintered technologies. Today's multilayer ceramic substrate technology based on co-fired ceramics originated from the development of the American Radio Corporation (RCA) in the late 1950s. The current basic process technologies (using cast metallization, via formation technology, and multi-layer stacking technology) were already in use at that time. Co-fired technology is widely used in the field of high-end packaging materials, such as RF filters (SAW, BAW), RF ICs, optical communication modules, image sensors, uncooled focal plane thermal infrared sensors, LDMOS, CMOS, MEMS sensors, etc. In the field of semiconductor equipment, co-fired technology is used in the production of vacuum electrostatic chucks such as etching.

[0080] The present invention utilizes ceramic co-firing technology to manufacture ICP and CCP or microwave ECR (electron cyclotron resonance) plasma sources. Its significance lies in that ceramic co-firing technology can integrate metal capacitive electrodes, inductive coils, microwave heads, heaters, dielectric windows, insulating materials, three-dimensional complex gas flow channels, and temperature sensors or other sensors and even actuators within a thickness of 10-20 mm or a similar scale. In addition, the integrated ceramic plasma source can be adhered or bonded to a metal backplate, dissipating heat with the help of cooling water channels (refrigerant) within the metal backplate, and the metal backplate can serve as another electrode plate of the CCP. This achieves the integration of the plasma source and the showerhead, and allows precise management of intelligent temperature and other functions within the plasma source.

[0081] Figure 1 A cross-sectional schematic diagram of a capacitively coupled plasma source based on ceramic co-firing according to an embodiment of the present invention is shown.

[0082] like Figure 1 As shown, a capacitively coupled plasma source based on ceramic co-firing includes: a metal backing plate 11, one or more gas inlet members 12, a co-fired ceramic plate 13, a diffusion chamber 14, a cooling channel 15, a mass flow controller 16, and a through hole. In the case of a single gas inlet member 12, gas distribution or diffusion can be achieved through the diffusion chamber below.

[0083] The diffusion cavity 14 is located between the metal backing plate 11 and the co-fired ceramic plate 13. The side (lower surface) of the metal backing plate 11 facing the co-fired ceramic plate 13 has a groove. When the metal backing plate 11 and the co-fired ceramic plate 13 are assembled, the diffusion cavity 14 is formed. The lower surface of the metal backing plate 11 serves as the upper wall of the diffusion cavity 14. The diffusion cavity 14 is isolated from the atmospheric environment. In another embodiment, the diffusion cavity 14 is integrated into the co-fired ceramic plate 13 and constitutes a cavity within the co-fired ceramic plate 13.

[0084] In one embodiment, the number of the diffusion chambers 14 is one or more. When the number of the diffusion chambers 14 is multiple, the number of the diffusion chambers 14 is the same as the number of the air intake members 12.

[0085] The metal back plate 11 and the co-fired ceramic plate 13 can be connected by bonding, adhering or overlapping. The overall thickness of the metal back plate 11 and the co-fired ceramic plate 13 is about 25 mm, which is much smaller than the thickness of the existing plasma source (greater than 200 mm, commonly 500 mm).

[0086] The cooling channel 15 is located inside the metal back plate 11 . Cooling water, a refrigerant, or a heat conductor may pass through the cooling channel 15 to control the temperature of the plasma source.

[0087] The metal backplate 11 has multiple inlet channels that communicate with the diffusion chamber 14. One end of the inlet member 12 is inserted into the inlet channels of the metal backplate 11, and its outlet communicates with the diffusion chamber 14. The inlet member 12 can be a metal pipe with a VCR connector, or a W-seal or C-seal connection to a fluid control element such as a mass flow controller or valve. The fluid control element is used to control the flow of gas entering and passing through the inlet member 12.

[0088] The number of the air inlet members 12 can be 1, 2, 3, 4, 5, 6, 7, etc., and can form an array.

[0089] The co-fired ceramic plate 13 includes a ceramic plate 131 and a plurality of RF electrodes 132 and / or microwave electrodes located within the ceramic plate 131. The ceramic plate 131 includes a first ceramic plate and a second ceramic plate, wherein the first ceramic plate is adjacent to the diffusion cavity 14 and the second ceramic plate is distal to the diffusion cavity 14. The RF electrode 132 is located between the first ceramic plate and the second ceramic plate.

[0090] The co-fired ceramic plate 13 is made by a co-firing process. The material of the ceramic plate 131 can be aluminum oxide, silicon oxide, zirconium oxide, yttrium oxide, beryllium oxide, (pyrolytic) boron nitride, (hot pressed) aluminum nitride or silicon nitride or silicon carbide. The ceramic plate 131 is a dielectric window for generating plasma. In one embodiment, the RF electrode 132 and / or the microwave electrode can be formed by printing or 3D printing, and then co-fired with the ceramic. In one embodiment, the RF electrode 132 and / or the microwave electrode can also be formed by sputtering, evaporation, chemical plating, electroplating or electroforming. The thickness of the RF electrode 132 is less than 5 mm, preferably less than 3 mm, and optimally within 1 mm.

[0091] In one embodiment, the RF electrode 132 and / or microwave electrode are made of metal, carbon (graphite, graphene, or glassy carbon), carbide such as silicon carbide, or doped conductive ceramic. Specifically, when the RF electrode 132 is made of doped conductive ceramic, losses caused by the high dielectric constant of the ceramic can be reduced. The RF electrode 132 is a grounded, gas-permeable conductive (metallized) mesh or grid, providing ion shielding.

[0092] The first ceramic plate is thicker than the second ceramic plate. The second ceramic plate is approximately 2 mm to 3 mm thick. The first ceramic plate above the RF electrode 132 is thicker or has a higher dielectric constant to prevent the RF electrode 132 from puncturing or discharging the metal backing plate.

[0093] In one embodiment, the ceramic plate 131 has a gas channel inside for heat exchange, for example, a gas channel is formed in the first ceramic plate.

[0094] In one embodiment, the plurality of RF electrodes 132 are connected to one RF generator 133. In another embodiment, each of the plurality of RF electrodes 132 can be individually connected to one RF generator 133. The microwave electrodes are connected to a microwave generator.

[0095] The plurality of gas inlet members 12 correspond to the plurality of RF electrodes 132. Each gas inlet member 12, each RF electrode 132 and the metal backing plate 11 constitute a plasma source. A single plasma source may share a common RF power control or have a separate RF power control.

[0096] Metal back plate 11 is grounded and forms a CCP electrode with RF electrode 132 in co-fired ceramic plate 13. In this embodiment, gas enters diffusion chamber 14 through gas inlet 12 and, under the action of the CCP electrode, forms a CCP plasma, a generalized CCP plasma such as a dielectric barrier discharge (DBD) plasma, or a hollow cathode plasma. In this case, diffusion chamber 14 is a remote plasma chamber.

[0097] Co-fired ceramic plate 13 has through-holes that extend through the first and second ceramic plates, connecting diffusion chamber 14 to the reaction chamber. This allows plasma within diffusion chamber 14 to enter the reaction chamber and process wafers and other products. Multiple through-holes are primarily located on the ceramic plate directly opposite diffusion chamber 14, avoiding RF electrode 132. The plasma source acts as a showerhead, and the through-holes serve as its nozzle, spraying plasma uniformly downward.

[0098] The reaction chamber is located below the plasma source and contains an electrostatic chuck that holds the wafers awaiting processing. The reaction chamber and plasma source together form a plasma processing device. Before plasma processing, the reaction chamber can be evacuated. The metal backing plate 11 is pressurized during this process, while the co-fired ceramic plate does not need to withstand significant pressure.

[0099] In one embodiment, one mass flow controller 16 is connected to multiple air inlets 12. In another embodiment, multiple mass flow controllers 16 are connected to multiple air inlets 12, and each mass flow controller 16 corresponds to each air inlet 12, and the air flow of each air inlet 12 can be controlled individually.

[0100] The mass flow controller 16 can be replaced by other fluid control elements such as valves.

[0101] A pressure sensor may be provided in the diffusion chamber 14 and / or in the air intake member 12 and / or at the air intake passage of the metal back plate 11 .

[0102] In other embodiments, a temperature sensor and / or a cooling gas channel and / or a heater may be provided in the ceramic plate 131 to control the temperature of the plasma source. A pressure sensor may also be provided in the ceramic plate 131 .

[0103] Figure 2A The figure shows a cross-sectional structural diagram of an inductively coupled plasma source based on ceramic co-firing according to an embodiment of the present invention. Figure 2B A schematic three-dimensional cross-sectional view of an inductively coupled plasma source body based on ceramic co-firing according to an embodiment of the present invention is shown. Figure 2C A perspective view of an inductively coupled plasma source body based on ceramic co-firing according to one embodiment of the present invention is shown. Figure 2D A perspective view of a metal back plate according to one embodiment of the present invention is shown. Figure 2E and 2F A perspective view illustrating a co-fired ceramic plate according to one embodiment of the present invention is shown. Figure 2G and 2H A perspective view illustrating a co-fired ceramic plate according to another embodiment of the present invention is shown. Figure 2I A perspective view of an inductively coupled plasma source body based on ceramic co-firing according to another embodiment of the present invention is shown.

[0104] like Figures 2A to 2I As shown, the inductively coupled plasma source based on ceramic co-firing includes a metal back plate 21, multiple gas inlet pieces 22, a co-fired ceramic plate 23, multiple diffusion chambers 24, a cooling channel 25, a mass flow controller 26, a through hole 27, a pressure sensor 28, and a temperature sensor 29.

[0105] The diffusion cavity 24 is located between the metal backing plate 21 and the co-fired ceramic plate 23. The metal backing plate 21 has a groove on the side facing the co-fired ceramic plate 23. When assembled, the metal backing plate 21 and the co-fired ceramic plate 23 form the diffusion cavity 24. The lower surface of the metal backing plate 21 serves as the upper wall of the diffusion cavity 24. The diffusion cavity 24 is isolated from the atmospheric environment. In another embodiment, the diffusion cavity 24 is integrated into the co-fired ceramic plate 23 and constitutes a cavity within the co-fired ceramic plate 23.

[0106] In one embodiment, the number of the diffusion chambers 24 is one or more. When the number of the diffusion chambers 24 is multiple, the number of the diffusion chambers 24 is the same as the number of the air intake members 22.

[0107] The metal backing plate 21 and the co-fired ceramic plate 23 can be connected by bonding, adhering, or overlapping. The overall thickness of the metal backing plate 21 and the co-fired ceramic plate 23 is about 20-25 mm, or the adjacent dimensions of the same dimension, which is less than the thickness of the existing plasma source (greater than 200 mm, typically 500 mm).

[0108] The cooling channel 25 is located inside the metal back plate 21. The cooling channel 25 can pass cooling water, refrigerant or thermal conductive agent to control the temperature of the plasma source. Figure 2C and Figure 2I As shown, the cooling channel 25 can be an integrated channel with various bending shapes.

[0109] The metal backplate 21 has multiple inlet channels 211 that communicate with the diffusion chamber 24. One end of the inlet member 22 is inserted into the inlet channels of the metal backplate 21, and its outlet communicates with the diffusion chamber 24. The inlet member 22 can be a metal pipe with a VCR connector 221, or a W-seal or C-seal connection to a fluid control element such as a mass flow controller or valve. The fluid control element is used to control the flow of gas entering and passing through the inlet member 22.

[0110] The number of the air inlet members 22 may be 2, 3, 4, 5, 6, 7, etc., and may form an array.

[0111] The co-fired ceramic plate 23 includes a ceramic plate 231 and a plurality of coils 232 located in the ceramic plate 231. The ceramic plate 231 includes a first ceramic plate and a second ceramic plate, wherein the first ceramic plate is adjacent to the diffusion cavity 24 and the second ceramic plate is distant from the diffusion cavity 24. The coils 232 are located between the first ceramic plate and the second ceramic plate.

[0112] The co-fired ceramic plate 23 is made by a co-firing process. The material of the ceramic plate 231 can be aluminum oxide, silicon oxide, zirconium oxide, yttrium oxide, beryllium oxide, (pyrolytic) boron nitride, (hot pressed) aluminum nitride or silicon nitride or silicon carbide. The ceramic plate 231 is a dielectric window for generating plasma. In one embodiment, the coil 232 can be formed by printing or 3D printing, and then co-fired with the ceramic. In one embodiment, the coil 232 can also be formed by sputtering, evaporation, chemical plating, electroplating or electroforming. The thickness of the coil 232 is less than 5 mm, preferably less than 3 mm, and optimally within 1 mm. The thickness of the coil 232 is in the millimeter level or even micrometer level, which is much smaller than the size of the existing water-cooled coil.

[0113] The thickness of the first ceramic plate is greater than that of the second ceramic plate. The first ceramic plate above the coil 232 is thicker to prevent the coil 232 from discharging or breaking through the metal back plate.

[0114] In one embodiment, the ceramic plate 231 has a gas channel inside for heat exchange, for example, a gas channel is formed in the first ceramic plate.

[0115] In one embodiment, the plurality of coils 232 are connected to one RF generator 233. In another embodiment, each of the plurality of coils 232 can be connected to one RF generator 233 and can be independently powered.

[0116] The plurality of gas inlets 22 correspond to the plurality of coils 232. Each gas inlet 22, each coil 232 and the metal backing plate 21 constitute a plasma source. The single plasma source has a shared RF power control or a separate RF power control.

[0117] The co-fired ceramic plate 23 has a through hole 27 that penetrates the first ceramic plate and the second ceramic plate, so that the diffusion chamber 24 and the reaction chamber are connected. The gas enters the diffusion chamber 24 through the air inlet 22, and the gas in the diffusion chamber 24 can enter the reaction chamber, forming plasma in the reaction chamber to process products such as wafers. The multiple through holes 27 are mainly dispersed in the ceramic plate facing the diffusion chamber 24, avoiding the coil 232. In one embodiment, as Figure 2E and 2F As shown, a plurality of through holes 27 can be arranged in a spiral array. In another embodiment, as shown in FIG. Figure 2G and 2H As shown, the plurality of through holes 27 may be arranged in a circular array.

[0118] The plasma source serves as a shower head, and the through hole 27 serves as a nozzle of the plasma source to spray gas downward uniformly.

[0119] The reaction chamber, located below the plasma source, houses an electrostatic chuck that holds the wafers awaiting processing. The reaction chamber and plasma source together form a plasma processing device. Before plasma processing begins, the reaction chamber can be evacuated. The metal backing plate 21 is pressurized during this process, while the co-fired ceramic plate does not need to withstand significant pressure.

[0120] In one embodiment, one mass flow controller 26 is connected to multiple air inlets 22. In another embodiment, multiple mass flow controllers 26 are connected to multiple air inlets 22, and each mass flow controller 26 corresponds to each air inlet 22, and the air flow of each air inlet 22 can be controlled independently.

[0121] The mass flow controller 26 can be replaced by other fluid control elements such as valves.

[0122] The pressure sensor 28 is disposed in the diffusion chamber 24 and / or the air intake member 22 and / or at the air intake passage of the metal back plate, and the flow rate can be calculated by the pressure sensor.

[0123] A temperature sensor 29, located within the metal backing plate 21, provides closed-loop control of the temperature within the plasma source. Furthermore, the gas flow rate can be controlled by combining the temperature rate (i.e., the rate of temperature change) with an upstream mass flow controller or valve. By monitoring the temperature change rate during gas flow, flow rate changes can be sensitively reflected.

[0124] Since the temperature is controlled by refrigerant or cooling water, which is relatively slow, a resistance heater can be set inside the metal backplate to adjust the temperature. Specifically, in scenarios where multi-point temperature control is required, multi-point cooling is difficult to control accurately, that is, it is difficult to set up N cooling water channels that are independently controlled from each other and control their flow rates. Therefore, in situations where multi-point temperature control is usually required, there is only one cooling water channel but multiple heaters and multiple temperature control points are used for cooling control. The essence is to achieve temperature control by first uniformly cooling and then compensating for local heating. A single cooling water channel can reduce the overall temperature to a lower baseline value (which must be lower than the target temperature of all temperature control points) to ensure that all temperature control points have adjustable space. Each temperature control point provides heat through an independent heater, and the heating power is controlled by real-time feedback from the temperature measuring point to achieve closed-loop temperature control at each point.

[0125] Figure 3A A schematic cross-sectional view of a ceramic co-fired inductively coupled plasma atomic layer deposition furnace tube is shown according to an embodiment of the present invention. Figure 3B A schematic cross-sectional view of a vertical ceramic co-fired inductively coupled plasma atomic layer deposition furnace tube according to one embodiment of the present invention is shown.

[0126] This embodiment and Figures 2A to 2IThe difference of the illustrated embodiment is that the reaction chamber is a furnace tube, in which a wafer boat for carrying wafers is arranged.

[0127] In semiconductor equipment, multi-wafer equipment is often referred to as batch equipment. Some high-temperature quartz chamber batch machines are also called furnaces.

[0128] Plasma generation is difficult to achieve in traditional furnaces. A common practice in solar cell equipment is to place cells in pairs on a wafer boat with graphite conductive contacts. Odd and even cells form a pair of electrodes, and when RF is applied, a direct plasma (CCP) is generated. In an embodiment of the present invention, multiple wafers are arranged vertically or horizontally, and a small plasma source is placed on one side of the wafer. The plasma stream flows from one side of the wafer to the other along the wafer surface. The wafer boat (not shown) can be rotated to improve uniformity. Multiple wafers can be in small batches of 5-25 wafers or even in full-size furnaces with over 100 wafers. Because each wafer can be calibrated in multiple zones, furnace uniformity and yield are significantly improved. Current technology makes it possible to sinter 300mm square high-precision co-fired ceramics. This can be achieved using a single co-fired ceramic plasma source for a 300mm high furnace tube, meaning small batches of 25-30 wafers. If multiple wafers can be spliced ​​together, a full-size furnace tube with 150 wafers can be achieved. Compared with the traditional quartz furnace tube, the furnace tube of the present invention is more suitable for being constructed using a metal cavity (not shown), and a quartz or ceramic lining is used to protect the metal cavity wall when necessary.

[0129] A method for preparing a co-fired ceramic plate comprises the following steps:

[0130] The ceramic tape is punched out to obtain two layers of ceramic tape with vias; maskless via metallization is performed using a scraper; digital printing is performed on the lower layer of ceramic tape to form a coil; the two layers of ceramic are stacked, laminated, and then co-fired.

[0131] A method for preparing a co-fired ceramic plate comprises the following steps:

[0132] The ceramic slurry is poured into a mold for casting, and then demolded to obtain a lower ceramic plate; holes are punched in the lower ceramic plate and a coil is printed to form the coil; the lower ceramic plate is placed in a mold, and an upper ceramic plate is cast thereon, holes are punched, and then co-fired.

[0133] Figure 4 A cross-sectional schematic diagram of an inductively coupled plasma source based on ceramic co-firing according to one embodiment of the present invention is shown.

[0134] like Figure 4As shown, an inductively coupled plasma source based on ceramic co-firing includes a metal backing plate 31, multiple gas inlet members 32, a co-fired ceramic plate 33, multiple diffusion chambers 34, a cooling channel 35, a process gas source 36, a through hole 37, a first pressure sensor 381, a second pressure sensor 382, ​​and a temperature sensor 39. The co-fired ceramic plate 33 includes a ceramic plate 331 and multiple coils 332 located in the ceramic plate 331. The coils 332 are connected to a radio frequency generator 333.

[0135] The metal back plate 31, multiple air inlet parts 32, co-fired ceramic plates 33, multiple diffusion cavities 34, cooling channels 35, through holes 37, and temperature sensors 39 are similar to the metal back plate 21, multiple air inlet parts 22, co-fired ceramic plates 23, multiple diffusion cavities 24, cooling channels 25, through holes 27, and temperature sensors 29, respectively, and will not be repeated here.

[0136] The first pressure sensor 381 and the second pressure sensor 382 are disposed in the air intake passage of the metal back plate. There is a height difference between the first pressure sensor 381 and the second pressure sensor 382, ​​with the first pressure sensor 381 being positioned higher than the second pressure sensor 382. In another embodiment, the first pressure sensor 381 and the second pressure sensor 382 are disposed on a metal component connecting the air intake passage of the metal back plate to the air intake member 32.

[0137] There is a laminar flow element LFE between the first pressure sensor 381 and the second pressure sensor 382, ​​and a pressure control valve that controls the laminar flow element LFE.

[0138] One of the first pressure sensor 381 and the second pressure sensor 382 can be a differential pressure sensor, in which case the second pressure = the first pressure + the differential pressure ΔP. The flow rate of the LFE can be calculated based on the differential pressure principle and controlled by a back pressure valve.

[0139] The pressure of the second pressure sensor 382 is equal to the pressure of the diffusion chamber or PRS remote plasma, which can be used to detect or control the pressure of the RPS or diffusion chamber. When plasma is generated in the diffusion chamber 34, the pressure in the diffusion chamber 34 is the pressure of the PRS remote plasma.

[0140] In other embodiments, the pressure measured by the second pressure sensor 382 is greater than the pressure measured by the first pressure sensor 381 , and only the second pressure sensor 382 is needed to measure and control the mass flow rate.

[0141] Figure 5 FIG. 4 shows a schematic diagram of pressure flow control in a choked flow mode according to an embodiment of the present invention.

[0142] IEC 60534-2-1 states that for a compressible fluid, if the inlet pressure P1 remains constant and the outlet pressure P2 gradually decreases, the mass flow rate through the control valve will increase to a maximum limit. Further reductions in P2 will result in no further flow increase, a condition known as choked flow. In other words, the flow rate Q is solely a function of the inlet pressure P1. It is generally assumed that P1 is greater than or equal to 2*P2 (the specific ratio depends on the specific heat capacity of the gas), and the flow rate is proportional to the absolute value of P1.

[0143] like Figure 5 As shown, the fluid choke point is determined by the F L Value, gas X T The values ​​are determined by the following equations: for liquids this is due to the formation of vapor, and for gases it is due to the speed of sound being reached at the constricting neck. The equations below show how these values ​​are obtained.

[0144] ΔP choked =F L 2 [P1-(F F )(P v )]

[0145] Among them, F L is the pressure recovery factor, F F is the liquid critical pressure ratio factor, F F =0.96-0.28(P V / P c ) 1 / 2 , P v =Fluid vapor pressure.

[0146] Q=P1*ReCoEff*constant, where ReCoEff is the flow resistance correlation coefficient.

[0147] Figure 6 FIG. 4 shows a schematic diagram of pressure flow control in a non-blocking flow mode according to an embodiment of the present invention. Figure 7 A schematic diagram of the fluid and pressure sensor is shown.

[0148] like Figure 6 As shown, for a fixed inlet pressure P1, the air velocity and mass flow rate are limited (choked) below the critical pressure ratio.

[0149] like Figure 7 As shown, the function of upstream pressure and downstream pressure can be the following equation:

[0150] f(P1,P2)=P1 2 –P2 2

[0151] Where f(Pu, Pd) is a function, P1 is the upstream pressure, and P2 is the downstream pressure. The secondary flow rate can be determined as follows:

[0152] Q=k*f(P1,P2).

[0153] Non-blocking flow Qi=f(P1 2 , P2 2 )

[0154]

[0155] In the above formula, under constant pressures P1 and P2, the non-blocked flow Qi = constant * ReCoEff, where ReCoEff is the coefficient of flow resistance of the flow resistance element. In the present invention, ReCoEff can be adjusted via an electrical control circuit and controlled by a controller. Alternatively, maintaining a constant area or constant flow resistance coefficient by adjusting the backpressure valve and varying the P2 pressure can control flow.

[0156] Figure 8 A cross-sectional schematic diagram of a microwave plasma source based on ceramic co-firing according to an embodiment of the present invention is shown. Figure 9A A schematic diagram of a microwave microstrip antenna array is shown. Figure 9B A schematic structural diagram of an antenna unit is shown.

[0157] Microstrip antennas, also commonly called patch antennas, consist of a radiating patch, a feed line, and a machined substrate. The radiating patch and feed line are usually photoetched on a dielectric substrate. The radiating patch can be square, rectangular, a thin strip (dipole), circular, elliptical, triangular, or any other configuration. Square, rectangular, dipole (strip), and circular are the most common, due to their ease of analysis and fabrication and their attractive radiation characteristics, especially low cross-polarization radiation. Microstrip dipoles are attractive because they inherently have a large bandwidth and take up less space, which gives them the advantage of arraying. Linear and circular polarization can be achieved with microstrip antennas using a single element or an array. Microstrip element arrays with single or multiple feeds can also be used to introduce scanning capabilities and achieve greater directivity.

[0158] Microstrip microwave antennas (arrays) made of co-fired ceramics are very common in the communications industry. It's worth noting that co-fired antenna arrays developed for the communications industry often have a lower power input density. This is primarily due to the fact that communications applications are typically performed in an atmosphere or in an environment filled with SF6 arc-quenching gas (SF6 has a breakdown field strength of 1.01 MV / cm at 2 times atmospheric pressure). High microwave power density can lead to discharges (the breakdown threshold of air at atmospheric pressure is typically 81 kV / cm).

[0159] The co-fired ceramic microwave antenna used in the plasma source of this invention has power that is not limited by field intensity. This allows for higher microwave feed density. Furthermore, the co-fired ceramic can withstand temperatures of several hundred degrees Celsius, and the metal backplane provides heat exchange and cooling with a refrigerant. This increases the total feed power of the microwave antenna array to several hundred or even several kilowatts, providing sufficient plasma density for the reaction chamber.

[0160] like Figure 8 As shown, the microwave plasma source based on ceramic co-firing includes: a metal back plate 41, a plurality of gas inlet pieces 42, a co-fired ceramic microstrip microwave antenna array layer 43, a cooling channel 44, a mass flow controller 45, and a through hole.

[0161] The cooling channel 44 is located inside the metal back plate 41. The cooling channel 44 can pass cooling water, a refrigerant, or a heat conductor to control the temperature of the plasma source. The cooling channel 44 can be an integrated channel with various bending shapes.

[0162] The metal back plate 41 has a groove, and the co-fired ceramic microstrip microwave antenna array layer 43 is mounted in the groove of the metal back plate 41 .

[0163] The co-fired ceramic microstrip microwave antenna array layer 43 includes a ceramic microwave distribution network layer 431 and a microstrip microwave antenna array 432. The ceramic microwave distribution network layer 431 includes a ceramic substrate and a distribution network located within the ceramic substrate. The ceramic microwave distribution network layer 431 is connected to a microwave generator 433.

[0164] The microstrip microwave antenna array 432 is located in the ceramic microwave distribution network layer 431 , with its lower surface exposed.

[0165] The ceramic microwave distribution network layer 431 distributes microwaves to each microstrip microwave antenna. There are gas diffusion channels and downward vias (not shown) between the back of the microstrip microwave antenna array and the metal backplane, allowing the gas to enter the cavity below through the gap between the antennas. The structure of the microstrip microwave antenna is the existing structure, such as Figure 9A and 9B shown.

[0166] The ceramic material may be aluminum oxide, silicon oxide, zirconium oxide, yttrium oxide, beryllium oxide, (pyrolytic) boron nitride, (hot pressed) aluminum nitride or silicon nitride or silicon carbide. The ceramic material is a dielectric window for generating plasma.

[0167] The metal backplate 41 has multiple inlet channels that communicate with the diffusion chamber. One end of the inlet member 42 is inserted into the inlet channels of the metal backplate 41. The inlet member 42 can be a metal pipe with a VCR connector, or a W-seal or C-seal connection to a fluid control element such as a mass flow controller or valve. The fluid control element is used to control the flow of gas entering and passing through the inlet member 42.

[0168] The number of the air inlet members 42 may be 2, 3, 4, 5, 6, 7, etc., and may form an array.

[0169] The reaction chamber, located below the plasma source, houses an electrostatic chuck that holds the wafers awaiting processing. The reaction chamber and plasma source together form a plasma processing unit. Before plasma processing, the reaction chamber can be evacuated. The metal backing plate bears the pressure during this evacuation process, while the co-fired ceramic plate does not.

[0170] In one embodiment, one mass flow controller 45 is connected to multiple air inlets 42. In another embodiment, multiple mass flow controllers 45 are connected to multiple air inlets 42, and each mass flow controller 45 corresponds to each air inlet 42, and the air flow of each air inlet 42 can be controlled independently.

[0171] The mass flow controller 45 can be replaced by other fluid control elements such as valves.

[0172] Figure 10 A cross-sectional schematic diagram of a microwave plasma source based on ceramic co-firing according to another embodiment of the present invention is shown.

[0173] like Figure 10 As shown, a microwave plasma source based on ceramic co-firing includes: a metal back plate 41, a plurality of air inlet pieces 42, a co-fired ceramic microstrip microwave antenna array layer 43, a cooling channel 44, a mass flow controller 45, and a through hole.

[0174] The metal back plate 41 has a groove, and the co-fired ceramic microstrip microwave antenna array layer 43 is mounted in the groove of the metal back plate 41 , and the lower surface of the co-fired ceramic microstrip microwave antenna array layer 43 is flush with or exceeds a distance from the lower surface of the metal back plate 41 .

[0175] The metal back plate 41 includes a first metal back plate 411 and a second metal back plate 412 . The first metal back plate 411 is located below the second metal back plate 412 .

[0176] The groove of the metal back plate 41 includes a hollow portion of the first metal back plate 411 and a groove portion of the second metal back plate 412 .

[0177] The cooling channel 44 is located inside the metal back plate 41. The cooling channel 44 can pass cooling water, a refrigerant, or a heat conductor to control the temperature of the plasma source. The cooling channel 44 can be an integrated channel with various bending shapes.

[0178] The co-fired ceramic microstrip microwave antenna array layer 43 includes a ceramic microwave distribution network layer 431 and a microstrip microwave antenna array 432. The ceramic microwave distribution network layer 431 includes a ceramic substrate and a distribution network located within the ceramic substrate. The ceramic microwave distribution network layer 431 is connected to a microwave generator 433.

[0179] A portion of the microstrip microwave antenna array 432 is located within the ceramic microwave distribution network layer 431 , with its lower surface exposed. Furthermore, the lower surface of the microstrip microwave antenna array 432 extends beyond the lower surface of the ceramic microwave distribution network layer 431 .

[0180] The ceramic microwave distribution network layer 431 distributes microwaves to each microstrip microwave antenna. There are gas diffusion channels and downward vias (not shown) between the back of the microstrip microwave antenna and the metal backplate, allowing the gas to enter the cavity below through the gap between the antennas. The structure of the microstrip microwave antenna is similar to the existing structure, such as Figure 9A and 9B shown.

[0181] The ceramic material may be aluminum oxide, silicon oxide, zirconium oxide, yttrium oxide, beryllium oxide, (pyrolytic) boron nitride, (hot pressed) aluminum nitride or silicon nitride or silicon carbide. The ceramic material is a dielectric window for generating plasma.

[0182] The metal backplate 41 has multiple inlet channels that communicate with the diffusion chamber. One end of the inlet member 42 is inserted into the inlet channels of the metal backplate 41. The inlet member 42 can be a metal pipe with a VCR connector, or a W-seal or C-seal connection to a fluid control element such as a mass flow controller or valve. The fluid control element is used to control the flow of gas entering and passing through the inlet member 42.

[0183] The number of the air inlet members 42 may be 2, 3, 4, 5, 6, 7, etc., and may form an array.

[0184] The reaction chamber, located below the plasma source, houses an electrostatic chuck that holds the wafers awaiting processing. The reaction chamber and plasma source together form a plasma processing unit. Before plasma processing, the reaction chamber can be evacuated. The metal backing plate bears the pressure during this evacuation process, while the co-fired ceramic plate does not.

[0185] In one embodiment, one mass flow controller 45 is connected to multiple air inlets 42. In another embodiment, multiple mass flow controllers 45 are connected to multiple air inlets 42, and each mass flow controller 45 corresponds to each air inlet 42, and the air flow of each air inlet 42 can be controlled independently.

[0186] The mass flow controller 45 can be replaced by other fluid control elements such as valves.

[0187] Although some embodiments of the present invention have been described in this application document, it will be understood by those skilled in the art that these embodiments are only shown as examples. Those skilled in the art can think of numerous variations, alternatives and improvements under the guidance of the present invention without exceeding the scope of the present invention.

[0188] It is intended that the scope of the invention be defined by the claims themselves and by the

[0189] Methods and structures within the scope of equivalent transformations thereof.

Claims

1. A plasma source based on ceramic co-firing, characterized in that, include: one or more air intake passages; a co-fired ceramic plate having a plurality of through-holes communicating with one or more air inlet channels; as well as A plurality of air inlet members have one end connected to the plurality of air inlet channels.

2. The plasma source based on ceramic co-firing according to claim 1, characterized in that It also includes a metal back plate, which is attached, bonded or bonded to the co-fired ceramic plate, and the air inlet channel is located in the metal back plate.

3. The plasma source based on ceramic co-firing according to claim 2, characterized in that: The diffusion cavity is located between the metal back plate and the co-fired ceramic plate or inside the co-fired ceramic plate and is communicated with the air inlet channel and the through hole.

4. The plasma source based on ceramic co-firing according to claim 2, characterized in that The metal back plate has a cooling channel.

5. The plasma source based on ceramic co-firing according to claim 3, characterized in that: The co-fired ceramic plate includes a ceramic plate and a plurality of radio frequency electrodes and / or microwave electrodes located in the ceramic plate; The ceramic plate includes a first ceramic plate and a second ceramic plate, wherein the first ceramic plate is adjacent to the diffusion cavity, the second ceramic plate is away from the diffusion cavity, and the radio frequency electrode is located between the first ceramic plate and the second ceramic plate.

6. The plasma source based on ceramic co-firing according to claim 5, characterized in that: The radio frequency electrode and / or microwave electrode is formed by printing or 3D printing and then co-fired with ceramics; or The radio frequency electrode and / or microwave electrode is formed by sputtering, evaporation, chemical plating, electroplating or electroforming; or The radio frequency electrode and / or microwave electrode is made of metal, carbon, carbide or doped conductive ceramic.

7. The plasma source based on ceramic co-firing according to claim 5, characterized in that The plurality of radio frequency electrodes and / or microwave electrodes are connected to one or more radio frequency generators and / or microwave generators; and / or The metal back plate is grounded, and the metal back plate and the plurality of radio frequency electrodes form an electrode pair.

8. The plasma source based on ceramic co-firing according to claim 3, characterized in that The co-fired ceramic plate includes a ceramic plate and a plurality of electrodes or coils located in the ceramic plate; The ceramic plate includes a first ceramic plate and a second ceramic plate, wherein the first ceramic plate is adjacent to the diffusion cavity, the second ceramic plate is away from the diffusion cavity, and the electrode or the coil is located between the first ceramic plate and the second ceramic plate.

9. The plasma source based on ceramic co-firing according to claim 8, characterized in that The plurality of electrodes or coils are connected to one or more radio frequency generators; and / or The thickness of the coil or electrode is less than 5 mm.

10. The plasma source based on ceramic co-firing according to claim 5 or 8, characterized in that: The material of the ceramic plate is aluminum oxide, silicon oxide, zirconium oxide, yttrium oxide, beryllium oxide, pyrolytic boron nitride, hot-pressed aluminum nitride, silicon nitride or silicon carbide; and / or A pressure sensor and / or a temperature sensor and / or a heater are provided in the ceramic plate; and / or The ceramic plate has a gas channel therein.

11. The plasma source based on ceramic co-firing according to claim 3, characterized in that: The number of the diffusion chambers is one or more, wherein the plurality of diffusion chambers corresponds to the plurality of air inlet members; and / or The plurality of gas inlets are connected to one or more mass flow controllers or valves; and / or A pressure sensor is provided in the diffusion chamber and / or in the air intake member and / or at the air intake passage of the metal back plate; and / or A temperature sensor is arranged in the metal back plate.

12. The plasma source based on ceramic co-firing according to claim 3, characterized in that: A groove is formed on one side of the metal back plate facing the co-fired ceramic plate. After the metal back plate is fixedly connected to the co-fired ceramic plate, the groove forms a diffusion cavity.

13. A plasma processing device, characterized in that: include: The ceramic co-fired plasma source according to any one of claims 1 to 12; as well as The reaction chamber is provided with a carrying structure inside, and the carrying structure is configured to carry a wafer, and the carrying structure is an electrostatic chuck or a wafer boat.

14. A microwave plasma source based on ceramic co-firing, characterized in that: include: a metal backplate with multiple air intake channels and grooves; A co-fired ceramic microstrip microwave antenna array layer, mounted in the groove of the metal backplate, the co-fired ceramic microstrip microwave antenna array layer comprising a ceramic microwave distribution network layer and a microstrip microwave antenna array, wherein the microstrip microwave antenna array is located in the ceramic microwave distribution network layer with its lower surface exposed; a plurality of air inlet members, one end of which is connected to the plurality of air inlet channels; A cooling channel is located inside the metal back plate.

15. The microwave plasma source based on ceramic co-firing according to claim 14, characterized in that: There are gas diffusion channels and downward vias between the back of the microstrip microwave antenna array and the metal backplate; and / or The plurality of gas inlets are connected to one or more mass flow controllers; and / or The ceramic microwave distribution network layer is connected to the microwave generator.

16. The microwave plasma source based on ceramic co-firing according to claim 14, characterized in that: The metal back plate includes a first metal back plate and a second metal back plate that are embedded, and the first metal back plate is located below the second metal back plate; The groove of the metal back plate includes a hollow portion of the first metal back plate and a groove portion of the second metal back plate.

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