Double-doped gallium silicate fluorescent powder material as well as preparation method and application thereof

Abstract

The invention relates to the technical field of luminescent materials, in particular to a double-doped gallium silicate fluorescent powder material and a preparation method and application thereof.The double-doped gallium silicate fluorescent powder material is obtained by doping Ca2Ga2SiO7 with Nd < 3 + > and Yb < 3 + >, the chemical formula of the double-doped gallium silicate fluorescent powder material is Ca2-x-yNdxYbyGa2SiO7, x is less than or equal to 0.25, 0lt; and y < = 0.25. Nd < 3 + > is used as a sensitizing agent, the Nd < 3 + > and an activating agent Yb < 3 + > are co-doped with Ca2Ga2SiO7 to achieve conversion luminescence, low thermal quenching performance is achieved, Nd < 3 + > can effectively sensitize Yb < 3 + >, an energy transfer phenomenon is generated, and absorption of the fluorescent powder material from an ultraviolet region to a near-infrared region is achieved. The fluorescent powder material has excellent near-infrared luminescence performance, can generate near-infrared emission under ultraviolet-near-infrared excitation, is wide in emission waveband range, can realize visible-infrared and infrared-infrared temperature measurement modes, and meets the temperature measurement requirements in multiple modes.

Description

Technical Field

[0001] The present invention relates to the technical field of luminescent materials, and in particular to a double-doped gallium silicate phosphor material and a preparation method and application thereof. Background Art

[0002] With the continuous advancement of information technology, security and versatility have become essential aspects of photonics device design. Core demands for these features are embodied in the research and development of novel materials. Rare-earth-doped materials, with their unique step-like electronic configuration, exhibit a rich spectrum of emission lines and are widely used in fields such as light-emitting diodes, lasers, displays, and temperature sensors.

[0003] Rare earth-doped materials can emit light across the visible and infrared regions, with the infrared band being more conducive to information transmission and concealment. Rare earth ion-doped near-infrared phosphors have efficient energy transfer properties, which are particularly important in time-resolved fluorescence and temperature sensing. At the same time, near-infrared radiation has considerable penetration depth and low scattering properties, and is unaffected by the emissivity / reflectivity of infrared absorbing media and objects, making it a powerful medium for thermal measurement in organisms or closed cavities. However, optical temperature measurement based on energy transfer strategies is constrained by the severe thermal quenching effect that occurs when the material is exposed to high temperatures, which affects its practical application.

[0004] Therefore, the existing technology still needs to be improved and developed. Summary of the Invention

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a dual-doped gallium silicate phosphor material and its preparation method and application, aiming to solve the problem that the existing materials used for near-infrared fluorescence temperature measurement have a severe thermal quenching effect under high temperature conditions.

[0006] The technical solutions of the present invention are as follows:

[0007] A double-doped gallium silicate phosphor material composed of Nd 3+ and Yb 3+ The chemical formula of the double-doped gallium silicate phosphor material is Ca 2-x-y Nd x Yb y Ga2SiO7, where 0 <x≤0.25,0<y≤0.25。

[0008] The dual-doped gallium silicate phosphor material, wherein x=0.06, y=0.02.

[0009] A method for preparing a dual-doped gallium silicate phosphor material comprises the following steps:

[0010] Grind and mix a calcium-containing compound, a gallium-containing compound, a silicon-containing compound, a neodymium-containing compound, and a ytterbium-containing compound to obtain a mixed powder;

[0011] After calcining the mixed powder and then grinding it, a double-doped gallium silicate phosphor material is obtained.

[0012] The method for preparing the double-doped gallium silicate phosphor material, wherein the molar ratio of calcium ions, gallium ions, silicon ions, neodymium ions, and ytterbium ions in the calcium-containing compound, gallium-containing compound, silicon-containing compound, neodymium-containing compound, and ytterbium-containing compound is (2 - x - y):2:1:x:y; where 0 < x ≤ 0.25 and 0 < y ≤ 0.25.

[0013] The method for preparing the double-doped gallium silicate phosphor material, wherein the temperature of the calcination treatment is 1300°C - 1500°C, and the time of the calcination treatment is 5 h - 12 h.

[0014] The method for preparing the double-doped gallium silicate phosphor material, wherein the calcium-containing compound includes one or more of calcium carbonate, calcium nitrate, calcium oxalate, calcium acetate, and calcium citrate; the silicon-containing compound includes one or more of silicon oxide, silicon tetroxide, and silicic acid.

[0015] The method for preparing the double-doped gallium silicate phosphor material, wherein the gallium-containing compound includes one or more of gallium oxide, gallium nitrate, gallium oxalate, and gallium carbonate.

[0016] The method for preparing the double-doped gallium silicate phosphor material, wherein the neodymium-containing compound includes one or more of neodymium oxide, neodymium nitrate, neodymium carbonate, and neodymium oxalate.

[0017] The method for preparing the double-doped gallium silicate phosphor material, wherein the ytterbium-containing compound includes one or more of ytterbium oxide, ytterbium nitrate, ytterbium carbonate, ytterbium oxalate, and ytterbium acetate.

[0018] Application of a double-doped gallium silicate phosphor material in an optical temperature measuring device.

[0019] Beneficial effects: The present invention provides a double-doped gallium silicate phosphor material, a preparation method thereof, and an application thereof. The double-doped gallium silicate phosphor material is obtained by co-doping Ca2Ga2SiO7 with Nd 3+ and Yb 3+ ; the chemical formula of the double-doped gallium silicate phosphor material is Ca 2-x-y Nd x Yb y Ga2SiO7, where 0 < x ≤ 0.25 and 0 < y ≤ 0.25. The present invention uses Nd 3+ as a sensitizer and, together with the activator Yb3+ Co-doped Ca2Ga2SiO7 achieves conversion luminescence with low thermal quenching performance; among them, Yb 3+ of 2 F 5 / 2 → 2 F 7 / 2 The electronic transition of Nd can produce near-infrared emission in the range of 940-1200nm, with the strongest emission peak at about 1000nm; 3+ There are many electronic excited states suitable for optical pumping in the ultraviolet to near-infrared wavelength range, and Nd 3+ Can effectively sensitize Yb 3+ , generating energy transfer phenomenon, realizing Ca 2-x- y Nd x Yb y Ga2SiO7 absorbs from ultraviolet to near-infrared regions. At the same time, this dual-doped gallium silicate phosphor material has excellent near-infrared luminescence performance, can produce near-infrared emission under ultraviolet-near-infrared excitation, and has a wide emission band range (850-1200nm), and can realize visible-infrared and infrared-infrared temperature measurement methods. Among them, the visible-infrared temperature measurement sensitivity reaches 0.311%K -1 , infrared-infrared temperature measurement sensitivity reaches 0.26%K -1 , meeting the temperature measurement needs in various modes. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a process flow chart of a method for preparing a dual-doped gallium silicate phosphor material according to the present invention;

[0021] Figure 2 This is a comparison chart of the X-ray powder diffraction pattern of the phosphor material prepared in Example 1 and the standard data;

[0022] Figure 3 This is a comparison chart of the X-ray powder diffraction pattern of the phosphor material prepared in Example 2 and the standard data;

[0023] Figure 4 This is a comparison chart of the X-ray powder diffraction pattern of the phosphor material prepared in Example 3 and the standard data;

[0024] Figure 5 This is the element distribution diagram of the phosphor material prepared in Example 3;

[0025] Figure 6 The diffuse reflectance spectra of the phosphor materials prepared in Examples 1 to 3;

[0026] Figure 7The fluorescence emission spectra of the phosphor materials prepared in Example 2 and Example 3 under 360 nm excitation;

[0027] Figure 8 FIG2 is a graph showing the change in the ratio of the fluorescence emission spectra of the phosphor materials prepared in Example 2 and Example 3 under 360 nm excitation to the room temperature intensity as the temperature changes;

[0028] Figure 9 The normalized spectrum of the phosphor material prepared in Example 3 under 360 nm excitation relative to 1060 nm, and the change in the intensity ratio between 1060 nm and 980 nm;

[0029] Figure 10 This is the normalized spectrum of the phosphor material prepared in Example 3 under 808 nm excitation relative to 1060 nm, and a graph showing the change in the intensity ratio between 1060 nm and 980 nm. DETAILED DESCRIPTION

[0030] The present invention provides a dual-doped gallium silicate phosphor material, its preparation method, and application. To make the objectives, technical solutions, and effects of the present invention more clear and explicit, the present invention is further described below. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0031] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art in the art to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with their meanings in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0032] The present invention provides a double-doped gallium silicate phosphor material, which is composed of Nd 3+ and Yb 3+ The chemical formula of the double-doped gallium silicate phosphor material is Ca 2-x-y Nd x Yb y Ga2SiO7, where 0 <x≤0.25,0<y≤0.25。

[0033] In this embodiment, Nd 3+ As a sensitizer, it is combined with the activator Yb 3+ Co-doped Ca2Ga2SiO7 realizes conversion luminescence; among them, Yb 3+ of 2 F 5 / 2 →2 F 7 / 2 The electronic transition of Nd can produce near-infrared emission in the range of 940-1200nm, with the strongest emission peak at about 1000nm; 3+ There are many electronic excited states suitable for optical pumping in the ultraviolet to near-infrared wavelength range, and Nd 3+ Can effectively sensitize Yb 3+ , generating energy transfer phenomenon, realizing Ca 2-x-y Nd x Yb y Ga2SiO7 absorbs from ultraviolet to near-infrared regions. At the same time, this dual-doped gallium silicate phosphor material has excellent near-infrared luminescence performance, can produce near-infrared emission under ultraviolet-near-infrared excitation, and has a wide emission band range (850-1200nm), and can realize visible-infrared and infrared-infrared temperature measurement methods. Among them, the visible-infrared temperature measurement sensitivity reaches 0.311%K -1 , infrared-infrared temperature measurement sensitivity reaches 0.26%K -1 , meeting the temperature measurement needs in various modes.

[0034] Specifically, the double-doped gallium silicate phosphor material is composed of Nd 3+ and Yb 3+ Co-doping with Ca2Ga2SiO7 exhibits energy transfer and high thermal stability, enabling thermometry using ratiometric fluorescence transfer in both visible-to-infrared and infrared-to-infrared conditions while maintaining high light intensity. This dual-doped gallium silicate phosphor material offers high sensitivity and excellent signal-to-noise ratio across a wide temperature range, while exhibiting low thermal quenching. Applications include optical thermometry, information encryption, and other fields.

[0035] In some embodiments, x=0.06, y=0.02, and the chemical formula of the dual-doped gallium silicate phosphor material is Ca 1.92 Nd 0.06 Yb 0.02 Ga2SiO7, the double-doped gallium silicate phosphor material has strong near-infrared emission. And the chemical formula is Ca 1.92 Nd 0.06 Yb 0.02 The Ga2SiO7 phosphor material has a stable structure and high thermal stability in near-infrared emission, maintaining 91.69% of its room temperature intensity at 400K.

[0036] In addition, Figure 1 As shown, the present invention also provides a method for preparing a dual-doped gallium silicate phosphor material, comprising the steps of:

[0037] Step S10: Grind and mix a calcium compound, a gallium compound, a silicon compound, a neodymium compound, and a ytterbium compound to obtain a mixed powder;

[0038] Step S20: After calcining the mixed powder and then grinding it, a double-doped gallium silicate phosphor material is obtained.

[0039] In this embodiment, a simple and feasible solid-state reaction method is adopted. The prepared double-doped gallium silicate phosphor material has stable structure, high near-infrared emission thermal stability, and high room-temperature strength. This preparation method uses Nd 3+ as a sensitizer, co-doped with the activator Yb 3+ to achieve conversion luminescence by co-doping Ca2Ga2SiO7, and Nd 3+ can effectively sensitize Yb 3+ , resulting in an energy transfer phenomenon, and achieving the absorption of Ca 2-x-y Nd x Yb y Ga2SiO7 from ultraviolet to near-infrared regions.

[0040] In some embodiments, the molar ratio of calcium ions, gallium ions, silicon ions, neodymium ions, and ytterbium ions in the calcium compound, gallium compound, silicon compound, neodymium compound, and ytterbium compound is (2 - x - y):2:1:x:y; where 0 < x ≤ 0.25 and 0 < y ≤ 0.25. Controlling the molar ratio of calcium ions, gallium ions, silicon ions, neodymium ions, and ytterbium ions in the compound within the above range can produce a double-doped gallium silicate phosphor material with the chemical formula Ca 2-x-y Nd x Yb y Ga2SiO7. It has an energy transfer phenomenon and high thermal stability, can achieve fluorescence ratio temperature measurement in two cases of visible-infrared and infrared-infrared while ensuring high light intensity, and has high-temperature measurement performance with good signal-to-noise ratio and high measurement sensitivity within a wide temperature range, and has low thermal quenching performance.

[0041] In some embodiments, the temperature of the calcination treatment is 1300°C - 1500°C, and the time of the calcination treatment is 5h - 12h. Under these calcination treatment conditions, the mixed powder can be made into a double-doped gallium silicate phosphor material by the solid-state reaction method, which has the advantages of stable structure and high near-infrared emission thermal stability.

[0042] In a preferred embodiment, the temperature of the calcination treatment is 1300°C, and the time of the calcination treatment is 6h.

[0043] In some embodiments, the calcium-containing compound includes one or more of calcium carbonate, calcium nitrate, calcium oxalate, calcium acetate, and calcium citrate; and the silicon-containing compound includes one or more of silicon oxide, silicon tetroxide, and silicic acid. These raw materials provide calcium ions and silicon ions to the dual-doped gallium silicate phosphor material, and after calcination, no impurity ions are added to the dual-doped gallium silicate phosphor material.

[0044] In some embodiments, the gallium-containing compound includes one or more of gallium oxide, gallium nitrate, gallium oxalate, and gallium carbonate. The above raw materials are used to provide gallium ions for the dual-doped gallium silicate phosphor material, and after calcination, no impurity ions are added to the dual-doped gallium silicate phosphor material.

[0045] In some embodiments, the neodymium-containing compound includes one or more of neodymium oxide, neodymium nitrate, neodymium carbonate, and neodymium oxalate. The above raw materials are used to provide neodymium ions for the dual-doped gallium silicate phosphor material, and after calcination, no impurity ions are added to the dual-doped gallium silicate phosphor material.

[0046] In some embodiments, the ytterbium-containing compound includes one or more of ytterbium oxide, ytterbium nitrate, ytterbium carbonate, ytterbium oxalate, and ytterbium acetate. These raw materials are used to provide ytterbium ions to the dual-doped gallium silicate phosphor material, and after calcination, no impurity ions are added to the dual-doped gallium silicate phosphor material.

[0047] In a preferred embodiment, the calcium-containing compound is calcium carbonate (CaCO3), the gallium-containing compound is gallium oxide (Ga2O3), the silicon-containing compound is silicon oxide (SiO2), the neodymium-containing compound is neodymium oxide (Nd2O3), and the ytterbium-containing compound is ytterbium oxide (Yb2O3). When CaCO3, Ga2O3, SiO2, Nd2O3, and Yb2O3 are used as raw materials to prepare a dual-doped gallium silicate phosphor material, the molar ratio is (2-xy): 1:1:x / 2:y / 2.

[0048] In addition, the present invention also provides an application of a double-doped gallium silicate phosphor material in an optical temperature measuring device.

[0049] In this embodiment, the double-doped gallium silicate phosphor material is composed of Nd 3+ and Yb 3+Co-doping with Ca2Ga2SiO7 exhibits energy transfer and high thermal stability, enabling thermometry using ratiometric fluorescence transfer in both visible-to-infrared and infrared-to-infrared conditions while maintaining high light intensity. This dual-doped gallium silicate phosphor material offers high sensitivity and excellent signal-to-noise ratio across a wide temperature range, while exhibiting low thermal quenching. Applications include optical thermometry, information encryption, and other fields.

[0050] The present invention will be described in detail with reference to the following examples. It should also be understood that the following examples are only intended to further illustrate the present invention and are not to be construed as limiting the scope of protection of the present invention. Any non-essential improvements and adjustments made by those skilled in the art based on the above disclosure of the present invention fall within the scope of protection of the present invention.

[0051] Example 1

[0052] In this embodiment, undoped phosphor Ca2Ga2SiO7 is prepared, and the specific steps are as follows:

[0053] (1) According to the stoichiometric ratio of each element in Ca2Ga2SiO7, CaCO3, Ga2O3, and SiO2 are weighed respectively and placed in a mortar, and an appropriate amount of anhydrous ethanol is added and ground for 30 minutes to obtain a first mixture.

[0054] (2) The first mixture was transferred into a corundum crucible and placed together in a muffle furnace and calcined at 1300°C for 6 hours. After cooling to room temperature, the product was ground into powder to obtain the target material Ca2Ga2SiO7.

[0055] Example 2

[0056] This example prepares a single-doped phosphor Ca 1.94 Nd 0.06 Ga2SiO7, the specific steps are as follows:

[0057] (1) According to Ca 1.94 Nd 0.06 The stoichiometric ratio of each element in Ga2SiO7 is obtained by weighing CaCO3, Ga2O3, SiO2 and Nd2O3 respectively, placing them in a mortar, adding an appropriate amount of anhydrous ethanol, and grinding for 30 minutes to obtain a first mixture.

[0058] (2) The first mixture was transferred into a corundum crucible and placed in a muffle furnace and calcined at 1300°C for 6 hours. After cooling to room temperature, the product was ground into powder to obtain the target material Ca 1.94 Nd 0.06 Ga2SiO7.

[0059] Example 3

[0060] In this embodiment, the double-doped phosphor Ca 1.92 Nd 0.06 Yb 0.02 Ga2SiO7, the specific steps are as follows:

[0061] (1) According to Ca 1.92 Nd 0.06 Yb 0.02 The stoichiometric ratio of each element in Ga2SiO7 is obtained by weighing CaCO3, Ga2O3, SiO2, Yb2O3 and Nd2O3 respectively and placing them in a mortar. An appropriate amount of anhydrous ethanol is added and the mixture is ground for 30 minutes to obtain a first mixture.

[0062] (2) The first mixture was transferred into a corundum crucible and placed in a muffle furnace and calcined at 1300°C for 6 hours. After cooling to room temperature, the product was ground into powder to obtain a dual-doped gallium silicate phosphor material Ca 1.92 Nd 0.06 Yb 0.02 Ga2SiO7.

[0063] The materials prepared in Examples 1-3 were subjected to the following test procedures:

[0064] (1) The phosphor materials prepared in Example 1, Example 2 and Example 3 were subjected to powder X-ray diffraction (XRD) tests, and the results were recorded in Figure 2 、 Figure 3 and Figure 4 , compared with the standard card of Ca2Ga2SiO7, it confirms the pure phase characteristics of the synthesized material, which shows that Nd 3+ and Yb 3+ Doping Ca2Ga2SiO7 material does not produce crystal phase changes.

[0065] (2) The phosphor material prepared in Example 3 was subjected to energy spectrum testing, and the distribution diagram of each element is shown in FIG. Figure 5 As shown, it can be confirmed that it contains Ca, Ga, Si, O, Nd and Yb elements.

[0066] (3) The diffuse reflectance spectra of the phosphor materials prepared in Example 1, Example 2 and Example 3 were tested. The results are as follows: Figure 6 As shown, the phosphor material prepared in Example 1 has no absorption in the visible and infrared bands, and only exhibits strong ultraviolet absorption. The phosphor material prepared in Example 2 has more absorption in the visible band; and the phosphor material prepared in Example 3 has an absorption peak in the infrared band.

[0067] (4) The fluorescence emission spectra of the phosphor materials prepared in Example 2 and Example 3 were tested (excitation wavelength was 360 nm). The results were as follows: Figure 7As shown, there are two emission peaks in Example 2, which are 900 nm and 1060 nm respectively; there are three emission peaks in Example 3, which are 900 nm, 980 nm and 1060 nm respectively.

[0068] (5) Test the emission spectra of the phosphor materials prepared in Example 2 and Example 3 under different temperature conditions, integrate the emission intensity of the fluorescence emission spectra varying with temperature, and obtain the curves of the emission light intensity varying with temperature for Example 2 and Example 3 as Figure 8 shown.

[0069] After calculation, at 400 K, the emission intensity of the phosphor material prepared in Example 2 is 87.58% of that at room temperature; the emission intensity of the phosphor material prepared in Example 3 is 91.69% of that at room temperature. It shows that the phosphor material provided by the present invention is applicable to high-temperature situations.

[0070] (6) For the luminescence spectra of the phosphor material prepared in Example 3 varying with temperature under different excitation wavelengths, normalize with the intensity at 1060 nm, and obtain the images as Figure 9 and Figure 10 shown; it can be seen that the phosphor material prepared in Example 3 can change the proportion of fluorescence intensity with temperature under the excitation of light sources with wavelengths of 360 and 808 nm, and can be used for fluorescence temperature measurement.

[0071] After calculation, the light intensity ratio of the sample can be fitted to obtain different luminescence intensity ratios at different temperatures, realizing optical temperature measurement with different band excitations.

[0072] In summary, a double-doped gallium silicate phosphor material and its preparation method and application provided by the present invention, the double-doped gallium silicate phosphor material is obtained by co-doping Ca2Ga2SiO7 with Nd 3+ and Yb 3+ ; the chemical formula of the double-doped gallium silicate phosphor material is Ca 2-x-y Nd x Yb y Ga2SiO7, where 0 < x ≤ 0.25, 0 < y ≤ 0.25. The present invention uses Nd 3+ as a sensitizer, and co-dopes with the activator Yb 3+ to achieve conversion luminescence in Ca2Ga2SiO7, with low thermal quenching performance; among them, the 3+ electron transition of Yb 2 F 5 / 2 → 2 F 7 / 2 can generate near-infrared emission in the range of 940 - 1200 nm, and presents the strongest emission peak at about 1000 nm; Nd 3+There are many electronic excited states suitable for optical pumping in the ultraviolet to near-infrared wavelength range, and Nd 3+ Can effectively sensitize Yb 3+ , generating energy transfer phenomenon, realizing Ca 2-x- y Nd x Yb y Ga2SiO7 absorbs from ultraviolet to near-infrared regions. At the same time, this dual-doped gallium silicate phosphor material has excellent near-infrared luminescence performance, can produce near-infrared emission under ultraviolet-near-infrared excitation, and has a wide emission band range (850-1200nm), and can realize visible-infrared and infrared-infrared temperature measurement methods. Among them, the visible-infrared temperature measurement sensitivity reaches 0.311%K -1 , infrared-infrared temperature measurement sensitivity reaches 0.26%K -1 , meeting the temperature measurement needs in various modes.

[0073] It should be understood that the application of the present invention is not limited to the above examples. For those skilled in the art, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A dual-doped gallium silicate phosphor material, characterized in that: By Nd 3+ and Yb 3+ The chemical formula of the double-doped gallium silicate phosphor material is Ca 2-x-y Nd x Yb y Ga2SiO7, where 0 <x≤0.25,0<y≤0.25。 2. The dual-doped gallium silicate phosphor material according to claim 1, characterized in that: x=0.06, y=0.

02.

3. A method for preparing the dual-doped gallium silicate phosphor material according to any one of claims 1 to 2, characterized in that: Including steps: Grinding and mixing a calcium-containing compound, a gallium-containing compound, a silicon-containing compound, a neodymium-containing compound, and an ytterbium-containing compound to obtain a mixed powder; The mixed powder is calcined and then ground to obtain a double-doped gallium silicate phosphor material.

4. The method for preparing a dual-doped gallium silicate phosphor material according to claim 3, characterized in that: The molar ratio of calcium ions, gallium ions, silicon ions, neodymium ions and ytterbium ions in the calcium-containing compound, gallium-containing compound, silicon-containing compound, neodymium-containing compound and ytterbium-containing compound is (2-xy):2:1:x:y; wherein, 0 <x≤0.25,0<y≤0.25。 5. The method for preparing the dual-doped gallium silicate phosphor material according to claim 3, characterized in that: The calcination temperature is 1300° C.-1500° C., and the calcination time is 5 h-12 h.

6. The method for preparing a dual-doped gallium silicate phosphor material according to claim 3, characterized in that: The calcium-containing compound includes one or more of calcium carbonate, calcium nitrate, calcium oxalate, calcium acetate, and calcium citrate; the silicon-containing compound includes one or more of silicon oxide, silicon tetroxide, and silicic acid.

7. The method for preparing a dual-doped gallium silicate phosphor material according to claim 3, characterized in that: The gallium-containing compound includes one or more of gallium oxide, gallium nitrate, gallium oxalate, and gallium carbonate.

8. The method for preparing a dual-doped gallium silicate phosphor material according to claim 3, characterized in that: The neodymium-containing compound includes one or more of neodymium oxide, neodymium nitrate, neodymium carbonate, and neodymium oxalate.

9. The method for preparing a dual-doped gallium silicate phosphor material according to claim 3, characterized in that: The ytterbium-containing compound includes one or more of ytterbium oxide, ytterbium nitrate, ytterbium carbonate, ytterbium oxalate, and ytterbium acetate.

10. Use of the dual-doped gallium silicate phosphor material according to any one of claims 1 to 2 in an optical temperature measuring device.

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