Semiconductor process chamber and semiconductor process equipment

Abstract

The invention discloses a semiconductor process chamber and semiconductor process equipment. The disclosed semiconductor process chamber comprises a chamber body, a base, a deposition ring and an isolation assembly, wherein the base, the deposition ring and the isolation assembly are located in the chamber body; the isolation assembly comprises a shielding ring and a first bushing ring, when the base ascends, the shielding ring can be in lap joint with the deposition ring, and the shielding ring ascends to a set position along with the base and is matched with the first bushing ring, so that a process space is jointly defined by the base, the deposition ring, the shielding ring and the first bushing ring; a gas inlet channel is formed in the side wall of the cavity body, gas uniformizing holes are formed in the first bushing ring, the gas inlet channel can be communicated with the process space through the gas uniformizing holes, and an external gas source can introduce process gas into the process space through the gas inlet channel and the gas uniformizing holes. In other words, the process gas in the gas inlet channel can fully enter the process space and then is exhausted through the exhaust port in the bottom of the cavity body, so that the process gas introduced into the process space can be fully ionized, and waste of the process gas cannot be caused.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] In the semiconductor integrated circuit manufacturing process, physical vapor deposition (PVD) is used to deposit a variety of different metal layers and related material layers. PVD coating technologies are mainly divided into three categories: vacuum evaporation, vacuum sputtering, and vacuum ion plating. Vacuum sputtering uses ions to bombard the surface of a target material, knocking atoms off the target surface. These atoms are then deposited on the substrate surface to form a thin film. By selecting a target material corresponding to the coating material, different metal coating processes can be achieved.

[0003] During the sputtering process, the power supply applies voltage to the target material and introduces process gas into the vacuum chamber. The process gas is ionized under high voltage, and the ionized atoms bombard the target material, causing the atoms on the target surface to detach and deposit on the substrate surface to form a thin film. The position where the process gas is introduced will affect the ionization rate and utilization rate of the process gas. Summary of the Invention

[0004] The present application discloses a semiconductor process chamber and semiconductor process equipment to improve the ionization rate and utilization rate of process gases.

[0005] In order to solve the above technical problems, this application is implemented as follows: In a first aspect, embodiments of the present application disclose a semiconductor process chamber, comprising a chamber body and a susceptor, a deposition ring, and an isolation assembly located within the chamber body; The deposition ring is disposed around the base and overlapped on the base; The isolation assembly includes a shielding ring and a first backing ring, wherein the first backing ring is fixed to the inner wall of the chamber body, and the shielding ring overlaps the inner wall of the chamber body; The pedestal is movably disposed within the chamber body. When the pedestal is raised, the shield ring overlaps the deposition ring. The shield ring rises with the pedestal to a set position and cooperates with the first backing ring, so that the pedestal, the deposition ring, the shield ring, and the first backing ring together enclose a process space. An air inlet channel is provided on the side wall of the chamber body, and an air uniforming hole is provided on the first liner ring. The air inlet channel is communicated with the process space through the air uniforming hole.

[0006] In the second aspect, an embodiment of the present application discloses a semiconductor process equipment, which includes an upper electrode, a radio frequency power supply and the semiconductor process chamber described in the first aspect, wherein the upper electrode is arranged at the top of the chamber body, and the radio frequency power supply is electrically connected to the upper electrode.

[0007] The technical solution adopted in this application can achieve the following technical effects: The semiconductor process chamber disclosed in the embodiment of the present application improves the relevant technology. The disclosed semiconductor process chamber includes a chamber body and a base, a deposition ring and an isolation assembly located in the chamber body. The isolation assembly includes a shielding ring and a first liner ring. The base, deposition ring, shielding ring and first liner ring together form a process space. The side wall of the chamber body is provided with an air inlet channel, and the first liner ring is provided with an air uniforming hole. The air inlet channel is connected to the process space through the air uniforming hole. An external gas source can pass process gas into the process space through the air inlet channel and the air uniforming hole. That is, the process gas in the air inlet channel can fully enter the process space and then be discharged through the exhaust port at the bottom of the chamber body. This allows the process gas introduced into the process space to be fully ionized without causing waste of process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 This is one of the structural schematic diagrams of the semiconductor process chamber disclosed in the embodiment of this application; Figure 2 This is a second structural diagram of a semiconductor process chamber disclosed in an embodiment of the present application; Figure 3 A schematic diagram of a partial structure of a semiconductor process chamber disclosed in an embodiment of the present application; Figure 4 This is a schematic structural diagram of the support flange disclosed in an embodiment of the present application; Figure 5 This is a schematic structural diagram of the installation portion disclosed in an embodiment of the present application; Figure 6 A cross-sectional view of the mounting portion disclosed in an embodiment of the present application; Figure 7 This is a schematic structural diagram of the first liner ring disclosed in an embodiment of the present application; Figure 8 A cross-sectional view of the first liner ring disclosed in an embodiment of the present application; Figure 9 A cross-sectional view of the second liner ring disclosed in an embodiment of the present application; Figure 10 A cross-sectional view of a shielding ring disclosed in an embodiment of the present application; Figure 11 A cross-sectional view of a deposition ring disclosed in an embodiment of the present application; Figure 12 Detailed diagram of the assembly of the deposition ring and the shielding ring disclosed in the embodiment of the present application; Figure 13 A schematic structural diagram of a bracket disclosed in an embodiment of the present application; Figure 14 is a gas pressure distribution diagram in a process chamber in the related art; Figure 15 A gas pressure distribution diagram in a semiconductor process chamber in this application; Figure 16 A gas pressure distribution diagram on a wafer surface in the related art; Figure 17 This is a gas pressure distribution diagram on the wafer surface in this application.

[0009] Description of reference numerals: 100-chamber body, 101-process space, 102-first annular uniform air space, 103-flow gap, 104-second annular uniform air space, 110-side wall, 111-side wall body, 112-mounting portion, 1121-inlet channel, 1122-annular groove, 1123-second threaded hole, 1124-third threaded hole, 120-annular support portion, 121-support flange, 1211-first sinking groove, 1212-second sinking groove, 1213-first threaded hole, 122-insulating ring, 130-bottom wall, 131-mounting port, 132-exhaust port, 140-bracket, 141-limiting structure, 200-base, 300-deposition ring, 310-second annular slot, 320-guide fitting portion, 400-isolating assembly, 410-shielding ring, 411-third annular base, 412-annular plug-in portion, 413-first connecting portion, 4131-guide portion, 414-second connecting portion, 420-first liner ring, 421-first annular base, 422-annular protrusion, 423-gas uniformity hole, 424-flow hole, 425-first annular slot, 430-second liner ring, 431-second annular base, 432-first annular shielding portion, 433-second annular shielding portion, 500-target 600-upper electrode, 610-rotating mechanism, 620-magnetron, 700-RF power supply. DETAILED DESCRIPTION

[0010] To make the objectives, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the specific embodiments of this application and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0011] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "first," "second," and the like generally distinguish objects of a class and do not limit the number of objects. For example, the first object may be one or more.

[0012] The technical solutions disclosed in various embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0013] Wafer coating, etching, and other processes are performed in the process chamber. Coating involves depositing thin films on the surface of semiconductors through methods such as physical vapor deposition and chemical vapor deposition. Etching involves high-precision machining of the semiconductor surface through a combination of chemical reactions and physical etching to create the desired pattern.

[0014] In order to protect the inner wall of the process chamber, a liner is set in the process chamber, and then a base is used to support the wafer. The base and the liner can enclose a process space for accommodating the wafer. During the above-mentioned coating or etching process, process gas needs to be introduced into the process space. In the related art, a bottom air intake method is usually adopted, that is, an air inlet is set on one side near the lower part of the process chamber. The process gas will first enter the area below the liner through the air inlet, and then the process gas will flow upward and diffuse into the process space through the assembly gap set on the liner. Since the pressure inside the process chamber needs to be maintained during the process, a vacuum pump is set at the bottom of the process chamber for exhaust. The vacuum pump will inevitably interfere with the above-mentioned air intake process during the exhaust process. The specific interference is manifested in that a portion of the process gas introduced into the lower part of the process chamber will be extracted by the vacuum pump, which makes the process gas in the process space insufficient, or requires the introduction of more process gas, resulting in the process gas introduced into the process space not being fully ionized or causing waste of process gas.

[0015] Based on the above questions, please refer to Figures 1 to 17The embodiment of the present application discloses a semiconductor process chamber. The disclosed semiconductor process chamber may include a chamber body 100, a pedestal 200, a deposition ring 300 and an isolation assembly 400, wherein the pedestal 200, the deposition ring 300 and the isolation assembly 400 are all arranged in the chamber body 100, the pedestal 200 can be used to carry wafers, the deposition ring 300 is arranged around the pedestal 200 and overlapped on the edge of the pedestal 200, and the deposition ring 300 can protect the edge of the pedestal 200 to prevent the plasma generated during the process from damaging the pedestal 200.

[0016] The isolation assembly 400 may include a shield ring 410 and a first backing ring 420. The shield ring 410 and the first backing ring 420 may be used to protect the inner wall of the chamber body 100, preventing plasma or deposits generated during the process from damaging or contaminating the inner wall of the chamber body 100. The first backing ring 420 may be fixed to the inner wall of the chamber body 100, and the shield ring 410 may overlap the inner wall of the chamber body 100. The shield ring 410 and the deposition ring 300 may be spaced apart in the vertical direction, and the shield ring 410 may be movable in the vertical direction relative to the chamber body 100.

[0017] The pedestal 200 is arranged in the chamber body 100 in a manner that can be raised and lowered. Specifically, the pedestal 200 can be driven to rise and fall by a driving element such as a motor or a cylinder. When the pedestal 200 rises, the deposition ring 300 can rise synchronously with the pedestal 200. When the deposition ring 300 rises to the height of the shield ring 410, the shield ring 410 can be overlapped on the deposition ring 300. In addition, the shield ring 410 can rise to a set position along with the pedestal 200 and cooperate with the first backing ring 420. At this time, the pedestal 200, the deposition ring 300, the shield ring 410 and the first backing ring 420 are used together to enclose the process space 101 (such as Figure 1 As shown), specifically, the pedestal 200, the deposition ring 300, the shielding ring 410 and the first backing ring 420 may form a whole to enclose a process space 101 together with the target material 500 described later.

[0018] The air inlet channel 1121 is arranged on the side wall 110 of the chamber body 100, and the first liner ring 420 is provided with an air uniforming hole 423. The air inlet channel 1121 can be connected with the process space 101 through the air uniforming hole 423. The external gas source can introduce process gas into the process space 101 through the air inlet channel 1121 and the air uniforming hole 423, that is, the process gas in the air inlet channel 1121 can fully enter the process space 101 and then be discharged through the exhaust port at the bottom of the chamber body 100, so that the process gas introduced into the process space can be fully ionized without causing waste of process gas.

[0019] From the above description, it can be seen that the semiconductor process chamber disclosed in the embodiment of the present application improves the relevant technology. The disclosed semiconductor process chamber includes a chamber body 100 and a base 200, a deposition ring 300 and an isolation assembly 400 located in the chamber body 100. The isolation assembly 400 includes a shielding ring 410 and a first liner ring 420. Since the base 200, the deposition ring 300 and the shielding ring 410 adopt a liftable design, when the base 200 rises, the shielding ring 410 overlaps the deposition ring 300, and the shielding ring 410 can rise to a set position with the base 200 and cooperate with the first liner ring 420, so that the base 200, the deposition ring 300, the shielding ring 410 and the first liner ring 420 together enclose a process space 101. The side wall 110 of the chamber body 100 is provided with an air inlet channel 1121, and the first liner ring 420 is provided with an air uniforming hole 423. The air inlet channel 1121 can be connected with the process space 101 through the air uniforming hole 423. The external gas source can introduce process gas into the process space 101 through the air inlet channel 1121 and the air uniforming hole 423, that is, the process gas in the air inlet channel 1121 can fully enter the process space 101 and then be discharged through the exhaust port 132 at the bottom of the chamber body 100, and is not easily disturbed by the airflow at the exhaust port 132. This allows the process gas introduced into the process space 101 to be fully ionized without causing waste of process gas.

[0020] In an optional embodiment of the present application, Figures 1 to 3 As shown, in addition to protecting the inner wall of the chamber body 100, the first liner ring 420 and the side wall 110 of the chamber body 100 form a first annular uniform air space 102, and the air inlet channel 1121 is connected to the first annular uniform air space 102. The number of the uniform air holes 423 can be multiple, and the multiple uniform air holes 423 are arranged at intervals along the circumference of the first annular uniform air space 102, thereby realizing the distribution of the multiple uniform air holes 423 in the circumferential direction around the base 200, and the uniform air holes 423 connect the first annular uniform air space 102 and the process space 101. An external gas source can pass the process gas into the first annular uniform gas space 102 through the air inlet channel 1121. The process gas can diffuse evenly and quickly into the first annular uniform gas space 102. Then, the multiple uniform gas holes 423 circumferentially around the first annular uniform gas space 102 can be used to pass the process gas into the process space 101 from multiple directions. This can avoid the situation in the related art where the process gas is introduced in a single direction from the side below the base 200, which can further improve the uniformity of the process gas inside the process space 101.

[0021] like Figures 1 to 6As shown, the chamber body 100 may include a sidewall 110 and an annular support portion 120. The annular support portion 120 is fixed to the top end of the sidewall 110 and protrudes toward the inside of the sidewall 110. The annular support portion 120 may be used to support the target 500. It should be noted that the top end of the sidewall 110 refers to the end of the sidewall 110 close to the annular support portion 120, and the inside of the sidewall 110 refers to the side of the sidewall 110 close to the process space 101.

[0022] The first liner ring 420 may include a first annular base 421 and an annular protrusion 422. The annular protrusion 422 is arranged on the top surface of the first annular base 421. Along the radial direction of the first annular base 421, the width of the annular protrusion 422 is smaller than the width of the first annular base 421, and the top surface of the annular protrusion 422 is higher than the top surface of the first annular base 421. The annular protrusion 422 and the first annular base 421 may be an integral structure, or they may be made separately and then assembled together by bonding, bolting, etc. The annular protrusion 422 is located between the first annular base 421 and the annular support portion 120. The top surface of the annular protrusion 422 abuts against the bottom surface of the annular support portion 120. The outer annular surface of the first annular base 421 faces the sidewall 110, and a gap is formed between the outer annular surface of the annular protrusion 422 and the sidewall 110. The annular support portion 120, the annular protrusion 422, the first annular base 421, and the sidewall 110 can enclose the first annular gas uniforming space 102 described above. A plurality of gas uniforming holes 423 can be respectively defined on the annular protrusion 422. The gas uniforming holes 423 extend radially along the first annular base 421 and penetrate the inner and outer annular surfaces of the annular protrusion 422. The gas inlet channel 1121 is provided on the sidewall 110 of the chamber body 100. Process gas can enter the process space 101 through the gas inlet channel 1121, the first annular gas uniforming space 102, and the plurality of gas uniforming holes 423.

[0023] like Figures 1 to 8 As shown, the side wall 110 of the chamber body 100 can be further divided into a side wall body 111 and a mounting portion 112. The mounting portion 112 can be provided at the top of the side wall body 111, and the annular support portion 120 can be provided above the mounting portion 112. To facilitate the installation of the first liner ring 420, an annular groove 1122 can be provided on the inner side of the mounting portion 112, and the edge of the first annular base 421 can extend into the annular groove 1122 to achieve positioning and installation. In addition, as shown in FIG. Figure 6 As shown, in order to improve the reliability of the assembly of the first liner ring 420 and the mounting portion 112, a plurality of second threaded holes 1123 can be opened on the bottom wall of the annular groove 1122. Correspondingly, a mounting hole can be opened on the first annular base 421. The first annular base 421 can be locked in the annular groove 1122 by passing screws through the mounting holes of the first annular base 421 and then connecting with the second threaded holes 1123.

[0024] The air inlet channel 1121 can be arranged in the mounting portion 112, and the outlet end of the air inlet channel 1121 is located on the bottom wall of the annular groove 1122. The annular support portion 120, the annular protrusion 422, the first annular base 421 and the mounting portion 112 form a first annular uniform air space 102. In order to allow the process gas to smoothly flow into the first annular uniform air space 102 from the outlet end of the air inlet channel 1121, a flow passage can be provided on the first annular base 421. Hole 424, the flow hole 424 extends in the vertical direction and passes through the top and bottom surfaces of the first annular base 421. The open end of the flow hole 424 located on the top surface of the first annular base 421 is connected to the first annular uniform air space 102, and the open end of the flow hole 424 located on the bottom surface of the first annular base 421 is connected to the outlet end of the air inlet channel 1121, so that the air inlet channel 1121 is connected to the first annular uniform air space 102 through the flow hole 424.

[0025] like Figure 3 and Figure 4 As shown, the above-mentioned annular support portion 120 may include a support flange 121 and an insulating ring 122. The support flange 121 is connected to the top of the mounting portion 112. The top surface of the inner side of the support flange 121 is provided with a first groove 1211. The insulating ring 122 can be arranged in the first groove 1211. Specifically, the outer edge of the insulating ring 122 can extend into the first groove 1211 to achieve positioning and installation. The insulating ring 122 is used to support the target material 500 to prevent the target material 500 from being conductive with the chamber body 100.

[0026] Considering that the support flange 121 and the insulating ring 122 are also used to enclose the process space 101, and the support flange 121 and the insulating ring 122 have exposed surfaces in the process space 101, in order to avoid damage or contamination of the support flange 121 and the insulating ring 122 by the plasma generated during the process, in an optional embodiment of the present application, Figures 1 to 3 、 Figure 9 As shown, the isolation assembly 400 may further include a second backing ring 430. The top surface of the support flange 121 is further provided with a second recessed groove 1212. The first recessed groove 1211 is disposed around the second recessed groove 1212, and the bottom wall of the second recessed groove 1212 is lower than the bottom wall of the first recessed groove 1211. During actual assembly, the second backing ring 430 may be overlapped on the second recessed groove 1212.

[0027] In the specific coating process, since both the target 500 and the support flange 121 have exposed surfaces facing the process space 101, the coating material produced within the process space 101 will inevitably be deposited on these exposed surfaces. If the coating material is conductive, the target 500 and the support flange 121 may be connected through the coating material, which may cause the target 500 to short to ground. Therefore, another function of the second backing ring 430 is to separate the target 500 and the support flange 121 to prevent them from being connected.

[0028] like Figures 1 to 3 、 Figure 9 As shown, the second backing ring 430 may include a second annular base 431 and a first annular shielding portion 432 extending upward from the end of the second annular base 431. The second annular base 431 and the first annular shielding portion 432 may be an integral structure. The first annular shielding portion 432 is positioned between the target 500 and the insulating ring 122, with the outer annular surface of the first annular shielding portion 432 facing the inner annular surface of the insulating ring 122. A portion of the second annular base 431 may overlap the second recessed groove 1212, so that the second annular base 431 is clamped and fixed by the support flange 121 and the insulating ring 122, thereby achieving the positioning and installation of the second backing ring 430. Since the second annular base 431 and the first annular shielding portion 432 cover the surfaces of the support flange 121 and the insulating ring 122 facing the process space 101, on the one hand, they can protect the support flange 121 and the insulating ring 122, and on the other hand, they can also avoid the problem of short circuit of the target material 500 caused by the connection between the target material 500 and the support flange 121.

[0029] In addition, if Figure 4 As shown, in order to further improve the stability of the assembly of the second liner ring 430 and the support flange 121, a plurality of first threaded holes 1213 can be opened on the bottom wall of the second groove 1212. Correspondingly, a mounting hole can be opened on the second annular base 431. The second annular base 431 can be locked to the second groove 1212 by passing screws through the mounting holes of the second annular base 431 and then connecting them to the first threaded holes 1213.

[0030] like Figures 1 to 3 、 Figure 9 As shown, the second liner ring 430 may also include a second annular shielding portion 433 extending downward from the bottom of the second annular base 431; the second annular shielding portion 433 is arranged opposite to the first annular base 421, and along the radial direction of the first annular base 421, the second annular shielding portion 433 is spaced apart from the first annular base 421, and an annular flow gap 103 is formed between the outer annular surface of the second annular shielding portion 433 and the inner annular surface of the first annular base 421.

[0031] The second annular shielding portion 433, the supporting flange 121, the annular protrusion 422 and the first annular base 421 can form a second annular uniform air space 104. The uniform air hole 423 mentioned above connects the first annular uniform air space 102 and the second annular uniform air space 104. The second annular uniform air space 104 can be connected to the process space 101 through the flow gap 103. An external gas source can pass the process gas into the first annular uniform gas space 102 through the air inlet channel 1121, and the process gas can diffuse evenly and quickly into the first annular uniform gas space 102. Then, the multiple uniform gas holes 423 circumferentially around the first annular uniform gas space 102 can be used to pass the process gas into the second annular uniform gas space 104 for further diffusion. The process gas in the second annular uniform gas space 104 can pass into the process space 101 through the flow gap 103. After the two uniform gas effects of the first annular uniform gas space 102 and the second annular uniform gas space 104, the process gas can be fully and evenly distributed in the second annular uniform gas space 104, thereby further improving the uniformity of the process gas inside the process space 101.

[0032] like Figures 1 to 3 As shown, the base 200 has a supporting plane for placing wafers, and the distance between the second annular shielding portion 433 and the supporting plane can be greater than the distance between the first annular base 421 and the supporting plane, so that the first annular base 421 and the second annular shielding portion 433 can be staggered in the vertical direction, so as to fully cover the inner wall of the chamber body 100 and the annular support portion 120, thereby improving the protective effect of the first liner ring 420 and the second liner ring 430.

[0033] The shielding ring 410 needs to rise to the set position along with the base 200 and cooperate with the first liner ring 420. In order to ensure that the shielding ring 410 and the first liner ring 420 are stably docked, the above-mentioned shielding ring 410 may include a third annular base 411 and an annular plug-in portion 412. The annular plug-in portion 412 is connected to the side of the third annular base 411 facing the first liner ring 420. The annular plug-in portion 412 can be located on the inner edge of the third annular base 411, or on the outer edge of the third annular base 411, or between the inner edge and the outer edge. A first annular slot 425 is provided on the bottom surface of the first annular base 421. The first annular slot 425 and the annular plug-in portion 412 are arranged opposite to each other in the lifting direction of the base 200, and along the radial direction of the first annular base 421, the width of the first annular slot 425 is greater than the thickness of the annular plug-in portion 412. When the base 200 lifts the shielding ring 410 to the set position, at least part of the annular plug-in portion 412 can extend into the first annular slot 425, thereby achieving stable docking between the shielding ring 410 and the first liner ring 420.

[0034] During the rising process of the susceptor 200, the deposition ring 300 can rise synchronously with the susceptor 200. When the deposition ring 300 rises to the height of the shielding ring 410, the shielding ring 410 can overlap the deposition ring 300 and then rise with the deposition ring 300 and the susceptor 200. In order to improve the stability of the docking between the deposition ring 300 and the shielding ring 410, Figures 1 to 3 、 Figures 10 to 12 As shown, a second annular slot 310 can be provided on the outer edge of the deposition ring 300. The shield ring 410 can further include a first connecting portion 413 and a second connecting portion 414. The first connecting portion 413 and the second connecting portion 414 are respectively connected to the inner edge of the third annular base 411, and the first connecting portion 413 and the second connecting portion 414 form a flared structure. When the base 200 lifts the shield ring 410 to a set position, the first connecting portion 413 contacts the outer annular surface of the deposition ring 300, and the second connecting portion 414 extends into the second annular slot 310. The flared structure formed by the first connecting portion 413 and the second connecting portion 414 can cover a portion of the outer edge of the deposition ring 300.

[0035] In an optional embodiment of the present application, the surface of the first connecting portion 413 facing the deposition ring 300 has a guide portion 4131, and the outer ring surface of the deposition ring 300 has a guide mating portion 320. The angle between the guide portion 4131 and the vertical direction can be greater than the angle between the guide mating portion 320 and the vertical direction. For example, the angle between the guide portion 4131 and the vertical direction can be 15°, and the angle between the guide mating portion 320 and the vertical direction can be 14°. When the base 200 lifts the deposition ring 300 to dock with the shield ring 410, as the deposition ring 300 moves upward, the shield ring 410 is lifted. During the lifting process, the guide portion 4131 of the shield ring 410 can slide along the guide mating portion 320 of the deposition ring 300. The deposition ring 300 can provide a position correction function for the shield ring 410, so that the deposition ring 300 and the shield ring 410 are accurately docked.

[0036] Since the shield ring 410 needs to be lifted and lowered in the chamber body 100, in order to ensure that the shield ring 410 can be stably positioned at a preset height of the chamber body 100 when the base 200 does not lift the shield ring 410, as shown in FIG. Figure 1 、 Figure 2 、 Figure 13 As shown, the chamber body 100 further includes a plurality of brackets 140, which are spaced apart along the circumference of the mounting portion 112. The plurality of brackets 140 are connected to the mounting portion 112 respectively, and the specific connection method can be bonding, clamping, etc. To facilitate the installation of the brackets 140, as shown in FIG. Figure 5As shown, a plurality of third threaded holes 1124 can be provided at circumferential intervals on the mounting portion 112. Accordingly, a mounting hole can be opened on the bracket 140. The bracket 140 can be locked to the mounting portion 112 by passing a screw through the mounting hole of the bracket 140 and then connecting with the third threaded hole 1124.

[0037] The base 200 has a first position and a second position. When the base 200 is in the first position, the annular plug-in portion 412 is located outside the first annular slot 425. When the base 200 is in the second position, at least part of the annular plug-in portion 412 extends into the first annular slot 425. The bracket 140 can support the shielding ring 410 when the base 200 is in the first position, so that the shielding ring 410 can be stably located at a preset height of the chamber body 100.

[0038] When the shielding ring 410 is placed on the bracket 140, in order to prevent the shielding ring 410 from sliding along its own radial direction, a limiting structure 141, such as a step structure, a limiting column, etc., can be set on the bracket 140. By utilizing the limiting cooperation between the limiting structure 141 and the shielding ring 410, the shielding ring 410 can be limited in the radial direction, thereby further improving the stability of the shielding ring 410.

[0039] like Figure 1 and Figure 2 As shown, the chamber body 100 may further include a bottom wall 130, which is connected to the bottom end of the side wall 110. The bottom wall 130 is provided with a mounting port 131 and an exhaust port 132. The base 200 can extend into the chamber body 100 through the mounting port 131. The exhaust port 132 can be used to connect a vacuum pumping device to maintain the vacuum environment inside the chamber body 100. In addition, the gas in the process space 101 will diffuse to the bottom of the process space 101 through the gap between the deposition ring 300 and the shielding ring 410, and the gap between the shielding ring 410 and the first liner ring 420, and then diffuse to the bottom of the process space 101 through the gap between the deposition ring 300 and the shielding ring 41 ... The exhaust port 132 is disposed on the bottom wall 130 of the chamber body 100 to discharge the process gas in the process space 101, thereby realizing the circulation of the process gas inside the process space 101. The exhaust port 132 is arranged on the bottom wall 130 of the chamber body 100, which can also reduce the disturbance caused by the exhaust process to the intake process of the process space 101, thereby further improving the uniformity of the process gas inside the process space 101. Moreover, the exhaust port 132 and the air intake channel 1121 adopt the above-mentioned layout, which can also avoid the process gas supplied by the air intake channel 1121 from being directly discharged through the exhaust port 132, thereby ensuring that there is sufficient process gas in the process space 101.

[0040] like Figures 14 to 17 As shown in the figure, the distribution of different colors represents different pressures, and the color changes from blue to red, which means that the pressure gradually increases. Figure 14 The figure shows the air inlet position and the air exhaust position of the process chamber in the related art. Figure 15 The air inlet position and the air exhaust position of the semiconductor process chamber in the present application are shown. Obviously, the air pressure in the process space in the present application is higher (the pressure of the process space in the related art is 180mtor-0.3mtor, and the pressure of the process space 101 formed in the present application is 180mtor+28.5mtor), which can ensure that there is sufficient process gas in the process space. Figure 16 shows the pressure distribution on the wafer surface in the related art, Figure 17 The pressure distribution on the wafer surface in this application is shown. Since this application adopts a variable volume process space design, combined with an intake channel and a uniform gas hole intake combination, the uniformity of the process gas in the process space can be improved. Figure 16 As shown in FIG, the color difference of the pressure simulation diagram in the related art is large, which means that the pressure distribution is uneven, and the maximum pressure difference is 0.16 Pa. Figure 17 As shown, the pressure simulation graph in this application has a small color difference, indicating a relatively uniform pressure distribution, where the maximum pressure difference is only 0.02 Pa. Compared with the solutions in the related art, the pressure distribution on the wafer surface in this application is more uniform, thus helping to improve process uniformity.

[0041] Please refer to Figures 1 to 17 The present application also discloses a semiconductor process device. The disclosed semiconductor process device may include an upper electrode 600, an RF power supply 700, and the semiconductor process chamber described above. The upper electrode 600 is disposed at the top of the chamber body 100. The RF power supply 700 is electrically connected to the upper electrode 600. The RF power supply 700 can feed RF energy into the process space 101 through the upper electrode 600 to generate plasma. In addition, a feeding structure (not shown in the figure) is also provided inside the upper electrode 600, which is connected to the RF power supply 700. In addition, the upper electrode 600 may also include a rotating mechanism 610 and a magnetron 620. The rotating mechanism 610 is connected to the magnetron 620 and can drive the magnetron 620 to rotate inside the upper electrode 600. The magnetron 620 can generate a specific magnetic field and cooperate with the RF electric field to optimize the characteristics of the plasma, such as optimizing the motion trajectory of the plasma and increasing the probability of collision between the plasma and gas molecules. The rotating mechanism 610 drives the magnetron 620 to rotate, which can eliminate the problem of asymmetric plasma distribution inside the chamber body 100 and improve process uniformity.

[0042] From the above description, it can be seen that the semiconductor process chamber disclosed in the embodiment of the present application improves the relevant technology. The disclosed semiconductor process chamber includes a chamber body 100 and a base 200, a deposition ring 300 and an isolation assembly 400 located in the chamber body 100. The isolation assembly 400 includes a shielding ring 410 and a first liner ring 420. Since the base 200, the deposition ring 300 and the shielding ring 410 adopt a liftable design, when the base 200 rises, the shielding ring 410 overlaps the deposition ring 300, and the shielding ring 410 can rise to a set position with the base 200 and cooperate with the first liner ring 420, so that the base 200, the deposition ring 300, the shielding ring 410 and the first liner ring 420 together enclose a process space 101. The side wall 110 of the chamber body 100 is provided with an air inlet channel 1121, and the first liner ring 420 is provided with an air uniforming hole 423. The air inlet channel 1121 can be connected with the process space 101 through the air uniforming hole 423. The external gas source can introduce process gas into the process space 101 through the air inlet channel 1121 and the air uniforming hole 423, that is, the process gas in the air inlet channel 1121 can fully enter the process space 101 and then be discharged through the exhaust port 132 at the bottom of the chamber body 100, and is not easily disturbed by the airflow at the exhaust port 132. This allows the process gas introduced into the process space 101 to be fully ionized without causing waste of process gas.

[0043] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different technical features between the various embodiments are not contradictory, they can be combined to form more specific embodiments. Considering the simplicity of the text, they will not be repeated here.

[0044] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A semiconductor process chamber, characterized in that: The invention comprises a chamber body (100), a base (200), a deposition ring (300), and an isolation assembly (400) located in the chamber body (100); The deposition ring (300) is arranged around the base (200) and overlapped on the base (200); The isolation assembly (400) comprises a shielding ring (410) and a first liner ring (420), wherein the first liner ring (420) is fixed to the inner wall of the chamber body (100), and the shielding ring (410) overlaps the inner wall of the chamber body (100); The base (200) is movably disposed in the chamber body (100); when the base (200) rises, the shielding ring (410) overlaps the deposition ring (300), and the shielding ring (410) rises with the base (200) to a set position and cooperates with the first backing ring (420), so that the base (200), the deposition ring (300), the shielding ring (410) and the first backing ring (420) together enclose a process space (101); The side wall (110) of the chamber body (100) is provided with an air inlet channel (1121), the first liner ring (420) is provided with an air uniforming hole (423), and the air inlet channel (1121) is connected to the process space (101) through the air uniforming hole (423).

2. The semiconductor process chamber according to claim 1, wherein: The first liner ring (420) and the side wall (110) of the chamber body (100) form a first annular uniform air space (102), and the air inlet channel (1121) is in communication with the first annular uniform air space (102); There are a plurality of the gas-uniform holes (423), and the plurality of gas-uniform holes (423) are arranged at intervals along the circumference of the first annular gas-uniform space (102). The gas-uniform holes (423) connect the first annular gas-uniform space (102) and the process space (101).

3. The semiconductor process chamber according to claim 2, wherein: The chamber body (100) comprises a side wall (110) and an annular support portion (120), wherein the annular support portion (120) is fixed to the top end of the side wall (110) and protrudes toward the inner side of the side wall (110), and the annular support portion (120) is used to support the target material (500); The first liner ring (420) includes a first annular base (421) and an annular protrusion (422), wherein the annular protrusion (422) is arranged on the top surface of the first annular base (421) and is against the bottom surface of the annular support portion (120), and the outer annular surface of the first annular base (421) is opposite to the side wall (110), and the annular support portion (120), the annular protrusion (422), the first annular base (421) and the side wall (110) form the first annular uniform air space (101), a plurality of the uniform air holes (423) are respectively opened on the annular protrusion (422), and the air inlet channel (1121) is arranged on the side wall (110).

4. The semiconductor process chamber according to claim 3, wherein: The side wall (110) comprises a side wall body (111) and a mounting portion (112), wherein the mounting portion (112) is provided at the top end of the side wall body (111), and the annular support portion (120) is provided on the mounting portion (112); The mounting portion (112) is provided with an annular groove (1122), the air inlet channel (1121) is provided in the mounting portion (112), and the air outlet end of the air inlet channel (1121) is located on the bottom wall of the annular groove (1122); the annular support portion (120), the annular protrusion (422), the first annular base (421) and the mounting portion (112) enclose the first annular uniform air space (101); The first annular base (421) is provided with a flow hole (424), the edge of the first annular base (421) extends into the annular groove (1122), and the flow hole (424) connects the air inlet channel (1121) and the first annular uniform air space (101).

5. The semiconductor process chamber according to claim 4, wherein: The annular support portion (120) includes a support flange (121) and an insulating ring (122), wherein the support flange (121) is connected to the top end of the mounting portion (112), and a first sinking groove (1211) is provided on the top surface inside the support flange (121), and the insulating ring (122) is provided in the first sinking groove (1211) for supporting the target material (500).

6. The semiconductor process chamber according to claim 5, wherein: A second sink groove (1212) is further provided on the top surface of the support flange (121), the first sink groove (1211) is arranged around the second sink groove (1212), and the bottom wall of the second sink groove (1212) is lower than the bottom wall of the first sink groove (1211); The isolation assembly further includes a second liner ring (430), the second liner ring (430) being overlapped on the second sink (1212) and being used to separate the target material (500) and the support flange (121).

7. The semiconductor process chamber according to claim 6, wherein: The second backing ring (430) comprises a second annular base (431) and a first annular shielding portion (432) extending upward from the end of the second annular base (431); The first annular shielding portion (432) is located between the target material and the insulating ring (122), and a partial area of ​​the second annular base (431) overlaps the second sink groove (1212) to be clamped by the supporting flange (121) and the insulating ring (122).

8. The semiconductor process chamber according to claim 7, wherein: The second backing ring (430) further includes a second annular shielding portion (433) extending downward from the bottom of the second annular base (431); The second annular shielding portion (433) is arranged opposite to the first annular base (421), and a flow gap (103) is provided between the outer annular surface of the second annular shielding portion (433) and the inner annular surface of the first annular base (421). The second annular shielding portion (433), the supporting flange (121), the annular protrusion (422) and the first annular base (421) form a second annular uniform gas space (104). The uniform gas hole (423) connects the first annular uniform gas space (102) and the second annular uniform gas space (104). The second annular uniform gas space (104) is connected to the process space (101) through the flow gap (103).

9. The semiconductor process chamber according to claim 8, wherein: The base (200) has a carrying plane for placing a wafer, and the distance between the second annular shielding portion (433) and the carrying plane is greater than the distance between the first annular base (421) and the carrying plane.

10. The semiconductor process chamber according to claim 4, wherein: The shielding ring (410) comprises a third annular base (411) and an annular plug-in portion (412), wherein the annular plug-in portion (412) is connected to a side of the third annular base (411) facing the first backing ring (420); A first annular slot (425) is provided on the bottom surface of the first annular base (421), and when the base (200) lifts the shielding ring (410) to the set position, at least a portion of the annular plug-in portion (412) extends into the first annular slot (425).

11. The semiconductor process chamber according to claim 10, wherein: The outer edge of the deposition ring (300) is provided with a second annular slot (310), and the shielding ring (410) further includes a first connecting portion (413) and a second connecting portion (414), wherein the first connecting portion (413) and the second connecting portion (414) are respectively connected to the inner edge of the third annular base (411), and the first connecting portion (413) and the second connecting portion (414) form a flared structure; When the base (200) lifts the shielding ring (410) to the set position, the first connecting portion (413) is connected to the outer ring surface of the deposition ring (300), and the second connecting portion (414) extends into the second annular slot (310).

12. The semiconductor process chamber according to claim 11, wherein: The surface of the first connecting portion (413) facing the deposition ring (300) has a guide portion (4131), the outer ring surface of the deposition ring (300) has a guide matching portion (320), and the angle between the guide portion (4131) and the vertical direction is greater than the angle between the guide matching portion (320) and the vertical direction.

13. The semiconductor process chamber according to claim 10, wherein: The chamber body (100) further comprises a plurality of brackets (140), wherein the plurality of brackets (140) are arranged at intervals along the circumference of the mounting portion (112) and are respectively connected to the mounting portion (112); The base (200) has a first position and a second position. When the base (200) is in the first position, the annular plug-in portion (412) is located outside the first annular slot (425). When the base (200) is in the second position, at least a portion of the annular plug-in portion (412) extends into the first annular slot (425). The bracket (140) is used to support the shielding ring (410) when the base (200) is in the first position.

14. The semiconductor process chamber according to claim 13, wherein: The bracket (140) is provided with a limiting structure (141), and the limiting structure (141) cooperates with the shielding ring (410) to limit the shielding ring (410) in a radial direction.

15. The semiconductor process chamber according to claim 3, wherein: The chamber body (100) further includes a bottom wall (130), wherein the bottom wall (130) is connected to the bottom end of the side wall (110); The bottom wall (130) is provided with a mounting opening (131) and an exhaust opening (132); the base (200) extends into the chamber body (100) through the mounting opening (131); and the exhaust opening (132) is used for connecting to a vacuum pumping device.

16. A semiconductor process equipment, characterized in that: The semiconductor process chamber comprises an upper electrode (600), a radio frequency power supply (700), and any one of claims 1 to 15, wherein the upper electrode (600) is arranged on the top of the chamber body (100), and the radio frequency power supply (700) is electrically connected to the upper electrode (600).

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