Micro LED transfer method and naked eye 3D display panel

Abstract

The invention relates to a micro LED transfer method and a naked eye 3D display panel, and relates to the technical field of semiconductor display. According to the transfer method of the micro LED, a first magnetic region is formed in a sapphire substrate of each micro LED unit, and a second magnetic region is formed at the bottom of each groove, so that the micro LED units can be adsorbed in a transfer substrate; the first electrode comprises a first metal layer, a second magnetic metal layer and a third metal layer, and a third magnetic metal layer is arranged below each pixel electrode, so that when the micro LED units on the transfer substrate are transferred to the driving substrate, the first electrode and the third magnetic metal layers have a magnetic attraction effect, and the micro LED units on the transfer substrate can be transferred to the driving substrate; therefore, the transfer accuracy of the micro LED unit is greatly improved, and the transfer yield of the micro LED unit is greatly improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor light emitting technology, and in particular to a micro-LED transfer method and a naked-eye 3D display panel. Background Art

[0002] Glasses-free 3D display panels are a type of display technology that creates a stereoscopic visual effect without the need for any auxiliary equipment (such as 3D glasses or helmets). This technology simulates the parallax effect produced by the human eye when viewing real objects, allowing viewers to directly view images with spatial depth and a sense of three-dimensionality without any auxiliary equipment. Glasses-free 3D micro-LED display technology combines the technical advantages of micro-LED display technology and specific 3D display technology. It uses an array of micro-LED light-emitting units as the display screen, and a layer of cylindrical lens array is placed in front of the display screen to divide the image into multiple sub-pixels. These are projected into the viewer's eyes in different directions, creating a three-dimensional effect. This gives it technical advantages such as strong three-dimensionality, vivid colors, high resolution, and a wide viewing angle. With the continuous advancement of technology, glasses-free 3D micro-LED display technology will also become one of the important development directions of future display technology. Summary of the Invention

[0003] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art and provide a micro-LED transfer method and a naked-eye 3D display panel.

[0004] To achieve the above objectives, the present invention provides a method for transferring micro LEDs, which includes the following steps: A sapphire substrate is provided, and a first semiconductor layer, a quantum well layer and a second semiconductor layer are epitaxially grown on the sapphire substrate.

[0005] Then, a plurality of first electrodes are formed on the second semiconductor layer, wherein the first electrodes include a first metal layer, a second magnetic metal layer and a third metal layer, wherein the second magnetic metal layer has a plurality of through holes exposing the first metal layer, and a portion of the third metal is embedded in the through holes so that the first metal layer is in direct contact with the third metal layer.

[0006] A carrier is provided, and the sapphire substrate is placed on the carrier so that the first electrode faces the carrier.

[0007] The sapphire substrate is then cut to form a plurality of micro LED units.

[0008] Then, a first ion implantation process is performed on the exposed surface of the sapphire substrate of each micro LED unit, where the implanted ions are nickel ions or cobalt ions, so as to form a first magnetic region in the sapphire substrate of each micro LED unit.

[0009] A transfer substrate is provided. The transfer substrate includes a plurality of grooves distributed in an array.

[0010] Then, a second ion implantation treatment is performed on the bottom of the plurality of grooves of the transfer substrate, where the implanted ions are nickel ions or cobalt ions, so as to form a second magnetic region at the bottom of each of the grooves, wherein the ion concentration of the second magnetic region is greater than the ion concentration of the first magnetic region.

[0011] Then, the plurality of micro LED units on the carrier are transferred to the transfer substrate, so that one micro LED unit is disposed in a corresponding groove, and the first magnetic region of each micro LED unit is fixedly adsorbed to the second magnetic region at the bottom of each groove.

[0012] A driving substrate is provided, which includes a plurality of pixel electrodes, and a third magnetic metal layer is arranged under each of the pixel electrodes. The plurality of micro LED units on the transfer substrate are transferred to the driving substrate, so that the first electrodes of the micro LED units are electrically connected to the corresponding pixel electrodes.

[0013] As a preferred technical solution, the material of the first metal layer and the third metal layer is copper or aluminum, the material of the second magnetic metal layer is nickel or cobalt, and the first metal layer, the second magnetic metal layer and the third metal layer are respectively formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating.

[0014] As a preferred technical solution, the thickness of the first metal layer is greater than the thickness of the second magnetic metal layer, and the thickness of the second magnetic metal layer is greater than the thickness of the third metal layer.

[0015] As a preferred technical solution, each of the micro LED units includes one first electrode.

[0016] As a preferred technical solution, the specific process of the first ion implantation treatment is as follows: the implantation energy of the first ion implantation treatment is 1000 ev-5000 ev, the implantation dose of the nickel ions or the cobalt ions is 3×10 15 cm -2 -3×10 18 cm -2 .

[0017] As a preferred technical solution, after forming the first magnetic region, a low-temperature heat treatment is performed at 100-300° C. for 50-150 seconds.

[0018] As a preferred technical solution, the specific process of the second ion implantation treatment is as follows: the implantation energy of the second ion implantation treatment is 6000 ev-9000 ev, the implantation dose of the nickel ions or the cobalt ions is 2×10 18 cm -2 -5×10 20 cm -2 After forming the second magnetic region, a low temperature heat treatment is performed at 100-300° C. for 50-150 seconds.

[0019] As a preferred technical solution, each of the pixel electrodes is in direct contact with the corresponding third magnetic metal layer, the pixel electrode is a metal copper electrode or a metal aluminum electrode, and the third magnetic metal layer is a metal cobalt layer or a metal nickel layer.

[0020] As a preferred technical solution, an encapsulation layer is formed, the transfer substrate is removed, and then the encapsulation layer is planarized to expose the first semiconductor of each micro LED unit, and then a common electrode is formed.

[0021] The present invention further provides a naked-eye 3D display panel, which is formed by using the above-mentioned micro-LED transfer method.

[0022] The beneficial effects of the present invention are: In the micro-LED transfer method of the present application, a first magnetic region is formed in the sapphire substrate of each micro-LED unit, and a second magnetic region is formed at the bottom of each groove, so that the micro-LED unit can be adsorbed in the transfer substrate, and the ion concentration of the second magnetic region is set to be greater than the ion concentration of the first magnetic region, so that the adsorption strength between the micro-LED unit and the transfer substrate can be further improved, and the first electrode is set to include a first metal layer, a second magnetic metal layer and a third metal layer, and a third magnetic metal layer is set under each pixel electrode, so that when the micro-LED unit on the transfer substrate is transferred to the driving substrate, the first electrode and the third magnetic metal layer have a magnetic attraction effect, thereby greatly improving the transfer accuracy of the micro-LED unit and greatly improving the transfer yield of the micro-LED unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram showing the structure of forming a first semiconductor layer, a quantum well layer, a second semiconductor layer and a first electrode in an embodiment of the present invention.

[0024] Figure 2 It is a schematic structural diagram showing a sapphire substrate being cut to form a plurality of micro LED units in an embodiment of the present invention.

[0025] Figure 3 It is a schematic structural diagram of forming a first magnetic region in an embodiment of the present invention.

[0026] Figure 4 It is a schematic structural diagram showing a second magnetic region formed at the bottom of a groove of a transfer substrate according to an embodiment of the present invention.

[0027] Figure 5 Schematic diagram of the structure of transferring a plurality of micro LED units on a carrier to a transfer substrate according to an embodiment of the present invention.

[0028] Figure 6 It is a schematic structural diagram of transferring a plurality of micro LED units on a transfer substrate to a driving substrate in an embodiment of the present invention.

[0029] Figure 7 It is a schematic structural diagram of forming an encapsulation layer and a common electrode in an embodiment of the present invention. DETAILED DESCRIPTION

[0030] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of the present application.

[0031] like Figures 1 to 7 As shown, this embodiment provides a method for transferring a micro LED, and the method for transferring a micro LED includes the following steps: like Figure 1 As shown, a sapphire substrate 100 is provided, and a first semiconductor layer 101 , a quantum well layer 102 and a second semiconductor layer 103 are epitaxially grown on the sapphire substrate 100 .

[0032] In a specific embodiment, the first semiconductor layer 101, the quantum well layer 102 and the second semiconductor layer 103 are epitaxially grown by metal organic chemical vapor deposition, wherein the first semiconductor layer 101 is a silicon-doped n-type gallium nitride layer or a magnesium-doped p-type gallium nitride layer, and correspondingly, the second semiconductor layer 103 is a magnesium-doped p-type gallium nitride layer or a silicon-doped n-type gallium nitride layer, and the quantum well layer 102 can be an alternately grown InGaN quantum well layer and a GaN quantum barrier layer.

[0033] like Figure 1As shown, a plurality of first electrodes are then formed on the second semiconductor layer 103, wherein the first electrodes include a first metal layer 201, a second magnetic metal layer 202 and a third metal layer 203, wherein the second magnetic metal layer 202 has a plurality of through holes exposing the first metal layer 201, and a portion of the third metal 203 is embedded in the through holes, so that the first metal layer 201 is in direct contact with the third metal layer 203.

[0034] In a specific embodiment, the first metal layer 201 and the third metal layer 203 are made of copper or aluminum, the second magnetic metal layer 202 is made of nickel or cobalt, and the first metal layer 201, the second magnetic metal layer 202 and the third metal layer 203 are formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating, respectively.

[0035] In a specific embodiment, the thickness of the first metal layer 201 is greater than the thickness of the second magnetic metal layer 202, and the thickness of the second magnetic metal layer 202 is greater than the thickness of the third metal layer 203. More specifically, the thickness of the first metal layer 201 is 300-600 nanometers, the thickness of the second metal layer 202 is 200-400 nanometers, and the thickness of the third metal layer 203 is 100-200 nanometers.

[0036] In a specific embodiment, a first mask is used to form a metal copper layer as the first metal layer 201 through an electroplating process, and then a second mask is used to deposit metal cobalt as the second metal layer 202 through a magnetron sputtering process, and then a third mask is used to deposit metal copper as the third metal layer 203 through a magnetron sputtering process.

[0037] like Figure 2 As shown, a carrier 300 is provided, and the sapphire substrate 100 is placed on the carrier 300 so that the first electrode faces the carrier 300. The sapphire substrate 100 is then cut to form a plurality of micro LED units 400.

[0038] In a specific embodiment, the carrier plate 300 may be made of ceramic, metal, semiconductor or plastic, and the carrier plate 300 may be used to support the sapphire substrate 100 .

[0039] In a specific embodiment, a temporary adhesive layer 301 is pre-set on the carrier 300. The temporary adhesive layer 301 can lose its viscosity under light conditions or heat treatment conditions. Then, when the sapphire substrate 100 is set on the carrier 300, the first electrode is embedded in the temporary adhesive layer 301.

[0040] In a specific embodiment, a plurality of micro LED units 400 are formed by mechanical cutting or laser cutting, and each of the micro LED units includes one first electrode.

[0041] like Figure 3 As shown, a first ion implantation treatment is then performed on the exposed surface of the sapphire substrate 100 of each of the micro LED units 400 , where the implanted ions are nickel ions or cobalt ions, so as to form a first magnetic region 401 in the sapphire substrate 100 of each of the micro LED units 400 .

[0042] In a specific embodiment, the specific process of the first ion implantation treatment is as follows: the implantation energy of the first ion implantation treatment is 1000 ev-5000 ev, the implantation dose of the nickel ions or the cobalt ions is 3×10 15 cm -2 -3×10 18 cm -2 .

[0043] In a specific embodiment, the low temperature heat treatment is performed at 100-300° C. for 50-150 seconds.

[0044] In a specific embodiment, when the metal ions are nickel ions, the injection energy of the ion implantation process is 1000 ev, 1500 ev, 2000 ev, 2500 ev, 3000 ev, 3500 ev, 4000 ev or 4500 ev, and when the metal ions are cobalt ions, the injection energy of the ion implantation process is 1200 ev, 1700 ev, 2200 ev, 2700 ev, 3200 ev, 3700 ev, 4200 ev or 5000 ev, and the injection dose of the nickel ions or the cobalt ions is 3×10 15 cm -2 , 9×10 15 cm -2 , 4×10 16 cm -2 , 8×10 16 cm -2 , 3×10 17 cm -2 , 8×10 17 cm -2 or 3×10 18 cm -2 .

[0045] In a specific embodiment, after forming the first magnetic region 401, a low-temperature heat treatment is performed at 100° C., 130° C., 170° C., 210° C., 260° C., 280° C., or 300° C. for 50 seconds, 70 seconds, 80 seconds, 90 seconds, 110 seconds, 130 seconds, or 150 seconds. By performing the low-temperature heat treatment on the first magnetic region 401, the aggregation of the metal magnetic ions in the first magnetic region 401 can be accelerated, thereby improving the magnetic properties of the first magnetic region 401.

[0046] like Figure 4 As shown, a transfer substrate 500 is provided, comprising a plurality of grooves 501 distributed in an array. A second ion implantation process is then performed on the bottoms of the grooves 501 of the transfer substrate 500. The implanted ions are nickel ions or cobalt ions, forming a second magnetic region 502 at the bottom of each groove. The ion concentration of the second magnetic region 502 is greater than the ion concentration of the first magnetic region 401.

[0047] In a specific embodiment, the spacing between the grooves 501 is the same, so that the spacing between adjacent micro LED units 400 can be adjusted.

[0048] In a specific embodiment, the specific process of the second ion implantation is as follows: the implantation energy of the second ion implantation is 6000 ev-9000 ev, the implantation dose of the nickel ions or the cobalt ions is 2×10 18 cm -2 -5×10 20 cm -2 After forming the second magnetic region 502 , a low temperature heat treatment is performed at 100-300° C. for 50-150 seconds.

[0049] In a specific embodiment, when the metal ions are nickel ions, the injection energy of the ion implantation process is 6000 eV, 6500 eV, 7000 eV, 7500 eV, 8000 eV or 8500 eV, and when the metal ions are cobalt ions, the injection energy of the ion implantation process is 6500 eV, 7000 eV, 7500 eV, 8000 eV, 8500 eV or 9000 eV, and the injection dose of the nickel ions or the cobalt ions is 2×10 18 cm -2 , 8×10 18 cm -2 , 3×10 19 cm -2 , 6×10 19 cm -2 , 9×10 19 cm -2, 2×10 20 cm -2 or 5×10 20 cm -2 .

[0050] In a specific embodiment, after forming the second magnetic region 502, a low-temperature heat treatment is performed at 100°C, 130°C, 170°C, 210°C, 260°C, 280°C, or 300°C for 50 seconds, 70 seconds, 80 seconds, 90 seconds, 110 seconds, 130 seconds, or 150 seconds. By performing the low-temperature heat treatment on the second magnetic region 502, the aggregation of the metal magnetic ions in the second magnetic region 502 can be accelerated, thereby improving the magnetic properties of the second magnetic region 502.

[0051] like Figure 5 As shown, the multiple micro LED units 400 on the carrier 300 are then transferred to the transfer substrate 500, so that one micro LED unit 400 is set in a corresponding groove 501, and the first magnetic area 401 of each micro LED unit 400 is fixedly adsorbed to the second magnetic area 502 at the bottom of each groove 501.

[0052] In a specific embodiment, by setting the ion concentration of the second magnetic region 502 to be greater than the ion concentration of the first magnetic region 401, and by setting the second magnetic region 502 to be located at the bottom of the groove 501, each micro LED unit 400 can be stably set in the groove 501, thereby preventing the micro LED unit 400 from falling off during the transfer process.

[0053] like Figure 6 As shown, a driving substrate 600 is provided, which includes a plurality of pixel electrodes 601, and a third magnetic metal layer 602 is arranged under each of the pixel electrodes 601. The plurality of micro LED units 400 on the transfer substrate 500 are transferred to the driving substrate 600, so that the first electrodes of the micro LED units 400 are connected to the corresponding pixel electrodes 601.

[0054] In a specific embodiment, each pixel electrode 601 is in direct contact with the corresponding third magnetic metal layer 602 , the pixel electrode 601 is a metal copper electrode or a metal aluminum electrode, and the third magnetic metal layer 602 is a metal cobalt layer or a metal nickel layer.

[0055] like Figure 7 As shown, an encapsulation layer 700 is then formed, the transfer substrate 500 is removed, and then the encapsulation layer 700 is planarized to expose the first semiconductor layer 101 of each micro LED unit 400 , and then a common electrode 800 is formed.

[0056] In a specific embodiment, the encapsulation layer 700 may be a polymer material and formed by an injection molding process, and the common electrode 800 is a transparent conductive layer.

[0057] like Figure 7 As shown, the present invention further proposes a naked-eye 3D display panel, which is formed by adopting the above-mentioned micro-LED transfer method.

[0058] In other preferred technical solutions, the present invention provides a method for transferring micro LEDs, which includes the following steps: A sapphire substrate is provided, and a first semiconductor layer, a quantum well layer and a second semiconductor layer are epitaxially grown on the sapphire substrate.

[0059] Then, a plurality of first electrodes are formed on the second semiconductor layer, wherein the first electrodes include a first metal layer, a second magnetic metal layer and a third metal layer, wherein the second magnetic metal layer has a plurality of through holes exposing the first metal layer, and a portion of the third metal is embedded in the through holes so that the first metal layer is in direct contact with the third metal layer.

[0060] A carrier is provided, and the sapphire substrate is placed on the carrier so that the first electrode faces the carrier.

[0061] The sapphire substrate is then cut to form a plurality of micro LED units.

[0062] Then, a first ion implantation process is performed on the exposed surface of the sapphire substrate of each micro LED unit, where the implanted ions are nickel ions or cobalt ions, so as to form a first magnetic region in the sapphire substrate of each micro LED unit.

[0063] A transfer substrate is provided. The transfer substrate includes a plurality of grooves distributed in an array.

[0064] Then, a second ion implantation treatment is performed on the bottom of the plurality of grooves of the transfer substrate, where the implanted ions are nickel ions or cobalt ions, so as to form a second magnetic region at the bottom of each of the grooves, wherein the ion concentration of the second magnetic region is greater than the ion concentration of the first magnetic region.

[0065] Then, the plurality of micro LED units on the carrier are transferred to the transfer substrate, so that one micro LED unit is disposed in a corresponding groove, and the first magnetic region of each micro LED unit is fixedly adsorbed to the second magnetic region at the bottom of each groove.

[0066] A driving substrate is provided, which includes a plurality of pixel electrodes, and a third magnetic metal layer is arranged under each of the pixel electrodes. The plurality of micro LED units on the transfer substrate are transferred to the driving substrate, so that the first electrodes of the micro LED units are electrically connected to the corresponding pixel electrodes.

[0067] In a more preferred technical solution, the first metal layer and the third metal layer are made of copper or aluminum, the second magnetic metal layer is made of nickel or cobalt, and the first metal layer, the second magnetic metal layer and the third metal layer are formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating, respectively.

[0068] In a more preferred technical solution, the thickness of the first metal layer is greater than the thickness of the second magnetic metal layer, and the thickness of the second magnetic metal layer is greater than the thickness of the third metal layer.

[0069] In a more preferred technical solution, each of the micro LED units includes one first electrode.

[0070] In a more preferred technical solution, the specific process of the first ion implantation treatment is as follows: the implantation energy of the first ion implantation treatment is 1000 ev-5000 ev, the implantation dose of the nickel ions or the cobalt ions is 3×10 15 cm -2 -3×10 18 cm -2 .

[0071] In a more preferred technical solution, after the first magnetic region is formed, a low-temperature heat treatment is performed at 100-300° C. for 50-150 seconds.

[0072] In a more preferred technical solution, the specific process of the second ion implantation treatment is as follows: the implantation energy of the second ion implantation treatment is 6000 ev-9000 ev, the implantation dose of the nickel ions or the cobalt ions is 2×10 18 cm -2 -5×10 20 cm -2 After forming the second magnetic region, a low temperature heat treatment is performed at 100-300° C. for 50-150 seconds.

[0073] In a more preferred technical solution, each of the pixel electrodes is in direct contact with the corresponding third magnetic metal layer, the pixel electrode is a metal copper electrode or a metal aluminum electrode, and the third magnetic metal layer is a metal cobalt layer or a metal nickel layer.

[0074] In a more preferred technical solution, an encapsulation layer is formed, the transfer substrate is removed, and then the encapsulation layer is planarized to expose the first semiconductor of each micro LED unit, and then a common electrode is formed.

[0075] In a more optimal technical solution, the present invention further proposes a naked-eye 3D display panel, which is formed by adopting the above-mentioned micro-LED transfer method.

[0076] In the micro-LED transfer method of the present application, a first magnetic region is formed in the sapphire substrate of each micro-LED unit, and a second magnetic region is formed at the bottom of each groove, so that the micro-LED unit can be adsorbed in the transfer substrate, and the ion concentration of the second magnetic region is set to be greater than the ion concentration of the first magnetic region, so that the adsorption strength between the micro-LED unit and the transfer substrate can be further improved, and the first electrode is set to include a first metal layer, a second magnetic metal layer and a third metal layer, and a third magnetic metal layer is set under each pixel electrode, so that when the micro-LED unit on the transfer substrate is transferred to the driving substrate, the first electrode and the third magnetic metal layer have a magnetic attraction effect, thereby greatly improving the transfer accuracy of the micro-LED unit and greatly improving the transfer yield of the micro-LED unit.

[0077] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A method for transferring micro LEDs, characterized by: The micro-LED transfer method includes the following steps: Providing a sapphire substrate, and epitaxially growing a first semiconductor layer, a quantum well layer, and a second semiconductor layer on the sapphire substrate; Then, a plurality of first electrodes are formed on the second semiconductor layer, wherein the first electrodes include a first metal layer, a second magnetic metal layer, and a third metal layer, wherein the second magnetic metal layer has a plurality of through holes exposing the first metal layer, and a portion of the third metal is embedded in the through holes, so that the first metal layer is in direct contact with the third metal layer; Providing a carrier, and placing the sapphire substrate on the carrier so that the first electrode faces the carrier; Then, the sapphire substrate is cut to form a plurality of micro LED units; Then, performing a first ion implantation process on the exposed surface of the sapphire substrate of each micro LED unit, wherein the implanted ions are nickel ions or cobalt ions, so as to form a first magnetic region in the sapphire substrate of each micro LED unit; Providing a transfer substrate, the transfer substrate comprising a plurality of grooves distributed in an array; Then, a second ion implantation process is performed on the bottoms of the plurality of grooves of the transfer substrate, where the implanted ions are nickel ions or cobalt ions, so as to form a second magnetic region at the bottom of each of the grooves, wherein the ion concentration of the second magnetic region is greater than the ion concentration of the first magnetic region; Then, the plurality of micro LED units on the carrier are transferred to the transfer substrate, such that one micro LED unit is disposed in a corresponding groove, and the first magnetic region of each micro LED unit is fixedly adsorbed to the second magnetic region at the bottom of each groove; A driving substrate is provided, which includes a plurality of pixel electrodes, and a third magnetic metal layer is arranged under each of the pixel electrodes. The plurality of micro LED units on the transfer substrate are transferred to the driving substrate, so that the first electrodes of the micro LED units are electrically connected to the corresponding pixel electrodes.

2. The micro-LED transfer method according to claim 1, wherein: The first metal layer and the third metal layer are made of copper or aluminum, the second magnetic metal layer is made of nickel or cobalt, and the first metal layer, the second magnetic metal layer and the third metal layer are formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating, respectively.

3. The micro-LED transfer method according to claim 2, wherein: The thickness of the first metal layer is greater than that of the second magnetic metal layer, and the thickness of the second magnetic metal layer is greater than that of the third metal layer.

4. The micro-LED transfer method according to claim 1, wherein: Each of the micro LED units includes one first electrode.

5. The micro-LED transfer method according to claim 1, wherein: The specific process of the first ion implantation treatment is as follows: the implantation energy of the first ion implantation treatment is 1000 ev-5000 ev, and the implantation dose of the nickel ions or the cobalt ions is 3×10 15 cm -2 -3×10 18 cm -2 .

6. The micro-LED transfer method according to claim 5, wherein: After forming the first magnetic region, a low-temperature heat treatment is performed at 100-300° C. for 50-150 seconds.

7. The micro-LED transfer method according to claim 5, wherein: The specific process of the second ion implantation treatment is as follows: the implantation energy of the second ion implantation treatment is 6000 ev-9000 ev, the implantation dose of the nickel ions or the cobalt ions is 2×1018 cm-2-5×1020 cm-2, and after the second magnetic region is formed, a low-temperature heat treatment is performed at 100-300°C for 50-150 seconds.

8. The micro-LED transfer method according to claim 1, wherein: Each pixel electrode is in direct contact with the corresponding third magnetic metal layer. The pixel electrode is a metal copper electrode or a metal aluminum electrode, and the third magnetic metal layer is a metal cobalt layer or a metal nickel layer.

9. The micro-LED transfer method according to claim 1, wherein: An encapsulation layer is formed, the transfer substrate is removed, and then the encapsulation layer is planarized to expose the first semiconductor layer of each micro LED unit, and then a common electrode is formed.

10. A naked-eye 3D display panel, characterized in that: The naked-eye 3D display panel is formed by using the micro-LED transfer method according to any one of claims 1 to 9.

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