Measurement method and device, electronic device, measurement device, and storage medium

Abstract

The application provides a measurement method and device, electronic equipment, measurement equipment and a storage medium. The method comprises the following steps: obtaining a target parameter selected by a user; controlling a measurement equipment corresponding to the target parameter to measure a target parameter value of an initial point on a sample based on the target parameter; controlling an X-ray fluorescence analysis equipment to detect the initial point; calculating a theoretical fluorescence intensity of the initial point based on the target parameter value and a calculation relationship, and determining an actual fluorescence intensity of the initial point based on a first measurement spectrum; establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial point and the theoretical fluorescence intensity of the initial point; calculating a theoretical fluorescence intensity of a measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship; and calculating a target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship. The method can be applied to measurement of different types of target parameters and can improve measurement efficiency.

Description

Technical Field

[0001] This application belongs to the field of measurement technology, and in particular relates to a measurement method, apparatus, electronic device, measuring equipment, and storage medium. Background Technology

[0002] In the semiconductor manufacturing industry, accurate measurement of sample (e.g., wafer) thickness and component concentration is crucial for ensuring product quality and performance. Currently, X-ray fluorescence (XRF), X-ray reflection (XRR), and X-ray diffraction (XRD) techniques are widely used in sample measurement. However, while standard-free XRF analysis does not require standard samples, its accuracy and repeatability are poor, making it difficult to meet the stringent standards of the semiconductor industry. Standard-based XRF analysis, while providing stable and accurate results, requires separate discrete instruments for standard acquisition, which is cumbersome, costly, and inefficient. Furthermore, while XRR technology can accurately and stably measure thickness, it cannot be used for component measurement. XRD technology is suitable for crystal type component measurement, but it has limitations in thickness measurement and is inefficient; no single technology can meet the requirements. Summary of the Invention

[0003] In view of this, embodiments of this application provide a measurement method, apparatus, electronic device, measuring equipment, and storage medium, which are applicable to the measurement of different types of target parameters, can improve measurement efficiency, and meet the measurement needs of the semiconductor industry.

[0004] In a first aspect, embodiments of this application provide a measurement method, including:

[0005] Obtain the target parameters selected by the user for testing;

[0006] Based on the target parameters, control the measuring device corresponding to the target parameters to measure the target parameter values ​​of the initial points on the sample;

[0007] The X-ray fluorescence analysis device is controlled to detect the initial point to obtain the first measurement spectrum of the initial point;

[0008] The theoretical fluorescence intensity of the initial point is calculated based on the target parameter value and the calculation relationship, and the actual fluorescence intensity of the initial point is determined based on the first measured spectrum, wherein the calculation relationship is the calculation relationship between the target parameter and the theoretical fluorescence intensity;

[0009] A mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity of the initial site is established based on the actual fluorescence intensity of the initial site.

[0010] In the case of obtaining the second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis equipment, the actual fluorescence intensity of the measurement point is determined based on the second measurement spectrum, and the theoretical fluorescence intensity of the measurement point is calculated based on the actual fluorescence intensity of the measurement point and the mapping relationship.

[0011] The target parameter values ​​for the measurement points are calculated based on the theoretical fluorescence intensity at the measurement points and the calculated relationship.

[0012] In some embodiments, when the target parameter includes thickness, controlling the measuring device corresponding to the target parameter to measure the target parameter value of the initial point on the sample based on the target parameter includes:

[0013] The thickness value at an initial point on the sample is measured using the thickness-controlled X-ray reflection device.

[0014] In some embodiments, when the target parameter includes component concentration, controlling the measuring device corresponding to the target parameter to measure the target parameter value at an initial point on the sample based on the target parameter includes:

[0015] The component concentration values ​​at initial points on the sample are measured using the component concentration-controlled X-ray diffraction equipment.

[0016] In some embodiments, when the target parameters include thickness and component concentration, controlling the measuring device corresponding to the target parameters to measure the target parameter values ​​at initial points on the sample based on the target parameters includes:

[0017] The target parameter values ​​for the measurement points are calculated based on the theoretical fluorescence intensity at the measurement points and the calculation relationship.

[0018] The component concentration values ​​at initial points on the sample are measured using the component concentration-controlled X-ray diffraction equipment.

[0019] In some embodiments, when there are multiple initial sites, establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial sites includes:

[0020] The actual fluorescence intensity and theoretical fluorescence intensity at each initial site are fitted to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity.

[0021] In some embodiments, the method further includes:

[0022] Obtain the angle of the incident light source of the measuring device corresponding to the target parameters;

[0023] The angle of the incident light source of the measuring device corresponding to the target parameter is adjusted based on the angle of the light source.

[0024] Secondly, embodiments of this application provide a measuring device, comprising:

[0025] The acquisition module is used to acquire the target parameters selected by the user for testing.

[0026] The first measurement module is used to control the measurement device corresponding to the target parameters to measure the target parameter values ​​of the initial points on the sample based on the target parameters.

[0027] The second measurement module is used to control the X-ray fluorescence analysis equipment to detect the initial point to obtain the first measurement spectrum of the initial point;

[0028] The first determining module is used to calculate the theoretical fluorescence intensity of the initial point based on the target parameter value and the calculation relationship, and to determine the actual fluorescence intensity of the initial point based on the first measured spectrum, wherein the calculation relationship is the calculation relationship between the target parameter and the theoretical fluorescence intensity;

[0029] A module is established to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity of the initial point.

[0030] The second determining module is used to determine the actual fluorescence intensity of the measurement point based on the second measurement spectrum detected by the X-ray fluorescence analysis device, and to calculate the theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship.

[0031] The calculation module is used to calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

[0032] Thirdly, embodiments of this application provide an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method described in any of the above-mentioned embodiments.

[0033] Fourthly, embodiments of this application provide a measuring device, including the electronic device, X-ray reflection device, X-ray diffraction device, and X-ray fluorescence analysis device described in the third aspect, wherein the electronic device is communicatively connected to the X-ray reflection device, X-ray diffraction device, and X-ray fluorescence analysis device.

[0034] Fifthly, embodiments of this application provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the method described in any of the preceding claims.

[0035] Sixthly, embodiments of this application provide a computer program product that, when run on a terminal device, causes the electronic device to execute any of the methods described above.

[0036] The beneficial effects of the embodiments in this application compared with the prior art are:

[0037] This application provides a measurement method that involves: acquiring a target parameter selected by a user; controlling a measurement device corresponding to the target parameter to measure the target parameter value at an initial point on the sample; controlling an X-ray fluorescence analysis device to detect the initial point to obtain a first measurement spectrum of the initial point; calculating the theoretical fluorescence intensity of the initial point based on the target parameter value and a calculation relationship, and determining the actual fluorescence intensity of the initial point based on the first measurement spectrum, wherein the calculation relationship is the calculation relationship between the target parameter and the theoretical fluorescence intensity; establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity of the initial point; when a second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device is obtained, determining the actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculating the theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity and the mapping relationship; and calculating the target parameter value of the measurement point based on the theoretical fluorescence intensity and the calculation relationship. This method is applicable to the measurement of different types of target parameters, improves measurement efficiency, and meets the measurement needs of the semiconductor industry. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the structure of a measurement system provided in an embodiment of this application;

[0040] Figure 2 A schematic diagram illustrating the implementation process of a measurement method provided for the purposes of this application;

[0041] Figure 3 A flowchart illustrating the process of determining target parameters for an initial point location, provided in an embodiment of this application;

[0042] Figure 4 A flowchart illustrating another method for determining target parameters of an initial point location, provided in an embodiment of this application;

[0043] Figure 5 This is a schematic diagram of the structure of a measuring device provided in an embodiment of this application;

[0044] Figure 6 A schematic flowchart of a measurement method provided in an embodiment of this application;

[0045] Figure 7 This is a schematic diagram of the structure of a measuring device provided in an embodiment of this application;

[0046] Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0047] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0048] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0049] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0050] As used in this application specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrases "if determined" or "if detected" may be interpreted, depending on the context, as "once determined," "in response to determination," "once detected," or "in response to detection."

[0051] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0052] References to "one embodiment" or "some embodiments" in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized.

[0053] Based on the problems in related technologies, this application provides a measurement method that can be applied to electronic devices, which may include: mobile phones, tablets, wearable devices, augmented reality (AR) / virtual reality (VR) devices, laptops, ultra-mobile personal computers (UMPCs), netbooks, and personal digital assistants (PDAs). This application does not impose any restrictions on the specific type of electronic device. Figure 1 This is a schematic diagram of the structure of a measurement system provided in an embodiment of this application, such as... Figure 1 As shown, the measurement system includes: an electronic device, an X-ray reflection device, an X-ray diffraction device, and an X-ray fluorescence analysis device, wherein the electronic device is communicatively connected to the X-ray reflection device, the X-ray diffraction device, and the X-ray fluorescence analysis device. Figure 2 A schematic diagram illustrating the implementation process of a measurement method provided for the purposes of this application is shown below. Figure 2 As shown, the measurement methods include:

[0054] Step S101: Obtain the target parameters to be tested selected by the user.

[0055] In this embodiment, the user refers to the operator who uses the measurement method to test the sample, who may be a researcher, production quality inspector, etc. The target parameter to be measured is certain characteristic indicators of the sample determined according to specific measurement requirements. For example, in semiconductor wafer measurement, the target parameter may be the wafer thickness, the concentration of each element in the wafer, etc.

[0056] In this embodiment, a list of selectable target parameters can be displayed to the user through a human-computer interaction interface (such as an operating interface on a computer screen). The user can select or input the target parameters to be measured from the list according to the actual measurement task. For example, on the interface of a measurement software, options such as "thickness" and "component concentration" are listed. The user clicks the corresponding option to complete the selection, thereby obtaining the target parameters to be measured selected by the user.

[0057] Step S102: Based on the target parameters, control the measuring device corresponding to the target parameters to measure the target parameter values ​​of the initial points on the sample.

[0058] In this embodiment, different target parameters require different measurement devices to obtain accurate data. For example, X-ray reflection equipment may be used to measure thickness; X-ray diffraction equipment may be used to measure elemental component concentration, etc. The initial points are measurement locations pre-set on the sample surface. The initial points can be one or more points. When there is one initial point, it can be the center of the sample. When there are multiple initial points, the selection of these points usually needs to consider factors such as the uniformity and representativeness of the sample. For example, for a square thin film sample, an initial point can be set at each of its four corners and the center. In some embodiments, the initial points can also be randomly selected points.

[0059] In this embodiment, the corresponding measuring device can be automatically identified and activated based on the target parameters selected by the user. After the sample is placed on the sample stage, the measuring device can be controlled to measure the initial point. For example, if the target parameter is thickness and an X-ray reflection device is selected, the X-ray source and detector of the X-ray reflection device are controlled to align with the initial point, emit X-rays and receive the reflected signal, and the thickness is calculated by analyzing information such as the intensity and angle of the reflected signal.

[0060] Step S103: Control the X-ray fluorescence analysis device to detect the initial point to obtain the first measurement spectrum of the initial point.

[0061] In this embodiment, the X-ray fluorescence analysis device utilizes X-rays to excite atoms in a sample, causing inner-shell electrons to be ejected, creating holes. When outer-shell electrons transition to fill these holes, characteristic X-ray fluorescence is emitted. The energy and intensity of this fluorescence can be detected by measuring the spectrum. The first measured spectrum is a curve showing the distribution of fluorescence intensity as a function of energy, obtained after the X-ray fluorescence analysis device detects the initial site.

[0062] In this embodiment, a control command can be sent to the X-ray fluorescence analysis device to cause its X-ray source to emit X-rays that irradiate the initial point. Atoms in the sample are excited and emit X-ray fluorescence. The detector receives these fluorescence signals and converts them into electrical signals. After signal processing and amplification, the electrical signals are converted into digital signals, ultimately generating the first measurement spectrum.

[0063] Step S104: Calculate the theoretical fluorescence intensity of the initial point based on the target parameter value and the calculation relationship, and determine the actual fluorescence intensity of the initial point based on the first measured spectrum, wherein the calculation relationship is the calculation relationship between the target parameter and the theoretical fluorescence intensity.

[0064] In this embodiment, the theoretical fluorescence intensity is a fluorescence intensity value derived from known target parameter values ​​and a certain physical model and calculation formula. It reflects the fluorescence intensity that the sample should produce under ideal conditions with given target parameters. The actual fluorescence intensity is a fluorescence intensity value directly read from the first measurement spectrum or obtained through a certain data processing method; it reflects the true fluorescence intensity produced by the sample in actual measurement. The calculation relationship is a formula or model describing the mathematical relationship between the target parameter and the theoretical fluorescence intensity. For example, for some elements, their theoretical fluorescence intensity may have a specific functional relationship with factors such as element concentration and film thickness.

[0065] In this embodiment, the measured target parameter values ​​can be substituted into the formula for calculation based on a pre-established calculation relationship. For example, if the calculation relationship is... I 理论 = k × C × d (in, I 理论 It is the theoretical fluorescence intensity. k It is a constant. C It's elemental concentration. d (It is the thickness), which can be measured. C and d The theoretical fluorescence intensity can be calculated by substituting the value into the formula.

[0066] In this embodiment, the first measured spectrum is analyzed, and the actual fluorescence intensity can be determined by finding the fluorescence peak intensity at a specific energy position. For example, for the characteristic X-ray fluorescence of silicon, the peak at the corresponding energy position is found in the spectrum, and the intensity of that peak is read as the actual fluorescence intensity of silicon at the initial position.

[0067] Step S105: Establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity of the initial site based on the actual fluorescence intensity of the initial site and the theoretical fluorescence intensity of the initial site.

[0068] In this embodiment, the mapping relationship is a mathematical model that establishes a correspondence between actual fluorescence intensity values ​​and theoretical fluorescence intensity values. It can be a simple linear relationship or a complex nonlinear relationship, used to describe the intrinsic connection between the two.

[0069] In this embodiment, if there is a linear relationship between the actual fluorescence intensity and the theoretical fluorescence intensity, the least squares method can be used for linear fitting. Multiple pairs of actual and theoretical fluorescence intensity data (xi, yi) can be collected from each initial site (where xi is the actual fluorescence intensity and yi is the theoretical fluorescence intensity). Fitting is performed based on the actual and theoretical fluorescence intensities of each initial site to establish a mapping relationship between the actual and theoretical fluorescence intensities. During fitting, the coefficients a and b in the linear equation y=ax+b can be solved by minimizing the sum of squared errors, thereby establishing the mapping relationship.

[0070] For nonlinear relationships, methods such as polynomial fitting and neural networks can be used to establish the mapping relationship. For example, when using a neural network, the actual fluorescence intensity is used as the input and the theoretical fluorescence intensity is used as the output. By training with a large amount of data, the neural network can learn the complex mapping relationship between the two.

[0071] In some embodiments, if the initial sampling point is a single point, a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity can be established. In many cases, there may be an approximately linear relationship between the actual fluorescence intensity and the theoretical fluorescence intensity. Even with only data from a single preset sampling point, this linear relationship can be initially assumed to hold. y = ax + b (in y Represents theoretical fluorescence intensity, x Represents the actual fluorescence intensity. a and b (The coefficient is to be determined). The actual fluorescence intensity obtained by measuring this preset point. x 0 and theoretical fluorescence intensity y Substitute 0 into the assumed linear equation. Since there is only one equation, it cannot be directly determined. a and b The value of can be determined by combining some prior knowledge. For example, if it is known that under certain standard conditions, when the actual fluorescence intensity is 0, the theoretical fluorescence intensity also approaches 0 (i.e., ... b If =0), then the equation can be simplified to: y = ax Then the coefficients are calculated. a This establishes a simple linear correspondence.

[0072] Step S106: After obtaining the second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis device, determine the actual fluorescence intensity of the measurement point based on the second measurement spectrum, and calculate the theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship.

[0073] In this embodiment, the measurement points are locations on the sample surface other than the initial points that need to be measured. Measuring these points allows for further understanding of the overall characteristic distribution of the sample. The second measurement spectrum is the fluorescence spectrum obtained after X-ray fluorescence analysis of the measurement points. Similar to the first measurement spectrum, it reflects the distribution of fluorescence intensity at the measurement points with energy.

[0074] In this embodiment, a control command can be sent to the X-ray fluorescence analysis device to cause its X-ray source to emit X-rays that irradiate the measurement point. Atoms in the sample are excited and emit X-ray fluorescence. The detector receives these fluorescence signals and converts them into electrical signals. After signal processing and amplification, the electrical signals are converted into digital signals, ultimately generating a second measurement spectrum.

[0075] In this embodiment of the application, the second measurement spectrum can be analyzed, and the fluorescence peak intensity at a specific energy position can be read as the actual fluorescence intensity at the measurement point.

[0076] In this embodiment, the actual fluorescence intensity at the measurement point can be substituted into the established mapping relationship for calculation. For example, if the mapping relationship is... y = ax + b The actual fluorescence intensity x The theoretical fluorescence intensity can be calculated by substituting the values ​​into the formula. y .

[0077] Step S107: Calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

[0078] In this embodiment, the calculation of the target parameter value is the reverse of the calculation of the theoretical fluorescence intensity of the initial point. Based on a pre-established calculation relationship, the calculated theoretical fluorescence intensity of the measurement point is substituted into the formula to solve for the target parameter value. For example, for the formula... I 理论 = k × C × d If it is known I 理论 , k and d The element concentration can be calculated. C .

[0079] The method provided in this application does not rely solely on direct measurement results from X-ray fluorescence analysis (XRF) equipment, but rather combines theoretical fluorescence intensity calculated based on target parameter values. By comparing and mapping actual fluorescence intensity with theoretical fluorescence intensity, the influence of multiple factors on fluorescence intensity is comprehensively considered, reducing the errors that may exist in a single measurement method, thereby significantly improving the accuracy of target parameter values ​​at measurement points. Data from preset points provides a reliable foundation for constructing the mapping relationship, enabling this mapping relationship to more accurately reflect the intrinsic connection between actual and theoretical fluorescence intensity, thus ensuring the accuracy of subsequent target parameter calculations at measurement points. Traditional methods may require multiple measurements using different equipment when facing different measurement needs, or involve cumbersome operations to obtain accurate standard sample information. However, the method provided in this application establishes a mapping relationship by controlling the measurement equipment corresponding to the target parameters to measure the target parameter values ​​at the initial points, and by using the XRF equipment to detect the preset points. Subsequently, only XRF detection of the measurement points and the calculation of target parameter values ​​using the existing mapping relationship are needed, greatly reducing the number of repeated measurements and improving overall measurement efficiency. After obtaining the second measurement spectrum at the measurement point, the actual fluorescence intensity can be quickly determined based on this spectrum, and the target parameter value at the measurement point can be quickly calculated using pre-established mapping and calculation relationships. The entire calculation process is relatively simple and efficient, requiring no complex algorithms or long waiting times, which helps to obtain measurement results in a timely manner during production or research. Traditional XRF analysis methods with standards require the preparation of a large number of standard samples, while the method provided in this application reduces the dependence on standard samples by establishing a mapping relationship between actual fluorescence intensity and theoretical fluorescence intensity, thus reducing the manpower, material resources, and time costs required in the standard sample preparation process. The method provided in this application can be applied to the measurement of different types of target parameters, whether it is film thickness, component concentration, or other parameters related to fluorescence intensity. It is only necessary to control the corresponding measurement equipment according to the corresponding target parameters and establish the corresponding calculation and mapping relationships. It has strong versatility and flexibility, and can meet the needs of different fields and different measurement scenarios.

[0080] In some embodiments, where the target parameter includes thickness, Figure 3 This application provides a flowchart illustrating the process of determining target parameters for an initial location, as shown in the embodiments of the present application. Figure 3 As shown, step S102 can be achieved through the following steps:

[0081] Step S1021: Measure the thickness value of the initial point on the sample based on the thickness control X-ray reflection device.

[0082] In this embodiment, the X-ray reflection device is an instrument that uses the reflection phenomenon generated by the interaction of X-rays with matter to measure relevant parameters of a sample. X-rays have high energy and short wavelengths. When they irradiate the sample surface, they are reflected. The intensity and angle of the reflection are closely related to parameters such as the sample's surface structure and thickness. In this embodiment, the total internal reflection and interference effects of X-rays on the sample surface are used. When X-rays are incident on the sample surface at an angle less than the critical angle, total internal reflection occurs. Furthermore, sample layers of different thicknesses cause interference between reflected X-rays. By analyzing the intensity distribution of the reflected X-rays, the thickness information of the sample can be obtained.

[0083] In this embodiment, an appropriate incident angle range can be set according to the expected thickness of the sample and the characteristics of X-rays. The choice of incident angle affects the intensity of reflected X-rays and the interference effect. Generally, for thinner samples, a smaller incident angle range needs to be selected to obtain a more obvious interference signal; for thicker samples, the incident angle range can be appropriately increased. The incident angle range can be determined through theoretical calculations or by referring to measurement experience of similar samples. For example, for thin film samples with a thickness of tens of nanometers, the incident angle range can be set between 0.1° and 2°.

[0084] In some embodiments, when the target parameter includes component concentration, step S102 can be achieved through the following steps:

[0085] Step S1022: Measure the component concentration value at the initial point on the sample using the component concentration-controlled X-ray diffraction equipment.

[0086] In this embodiment, the X-ray diffraction device is an instrument that uses the diffraction phenomenon generated by the interaction of X-rays with matter to analyze the crystal structure and composition of a sample. X-rays exhibit wave-particle duality; when they irradiate a crystal sample, the atoms or molecules in the crystal scatter the X-rays. These scattered waves interfere with each other, forming a specific diffraction pattern. By analyzing the diffraction pattern, information about the crystal structure of the sample can be obtained, and thus the component concentration of the sample can be inferred.

[0087] In some embodiments, when the target parameters include thickness and component concentration, Figure 4 This is a schematic diagram of another process for determining target parameters provided in an embodiment of this application, such as... Figure 4 As shown, step S102 can be achieved through the following steps:

[0088] Step S1023: Calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship;

[0089] Step S1024: Measure the component concentration value at the initial point on the sample using the component concentration-controlled X-ray diffraction equipment.

[0090] In this embodiment of the application, the implementation of step S1023 can be referred to step S1021, and the implementation of step S1024 can be referred to step S1024.

[0091] In some embodiments, during the process of controlling the measuring device to perform measurement, the method further includes:

[0092] Obtain the incident light source angle of the measuring device corresponding to the target parameters.

[0093] In this embodiment of the application, the angle of the incident light source can be measured using a goniometer.

[0094] The angle of the incident light source of the measuring device corresponding to the target parameter is adjusted based on the angle of the light source.

[0095] The angle of the incident light source of the measuring device corresponding to the target parameter can be adjusted by detecting the angle of the light source.

[0096] Based on the aforementioned measurement method, embodiments of this application provide a measurement device. Figure 5 This is a schematic diagram of the structure of a measuring device provided in an embodiment of this application, such as... Figure 5 As shown, the measuring equipment includes: an X-ray reflection device, an X-ray diffraction device, and an X-ray fluorescence analysis device. The X-ray reflection device includes an XRR light source and an XRR surface detector; the X-ray diffraction device includes an XRD light source and an XRD surface detector; and the X-ray fluorescence analysis device includes an XRF light source and an XRF detector. The XRF light source is fixed in position, while the XRR / XRD light sources can vary their incident light angles. The two light sources are located on two parallel facades. The XRF light source remains fixed, while the XRR / XRD light sources can vary their incident light angles within the facades. These different angles are achieved using a goniometer. The XRF detector is fixed in position, while the XRR / XRD surface detectors can change their angles. When the sample is placed on the sample stage, the incident light angle of the XRR / XRD light sources can be adjusted to cause the sample to reflect / diffuse, allowing the XRR / XRD surface detectors to detect the reflection / diffraction spectra and calculate the target parameter values. The XRF light source can also cause the sample to fluoresce, allowing the XRF detectors to detect the measured spectrum. This measuring device utilizes a three-in-one XRF, XRD, and XRR instrument and the combination of these three technologies to solve the problems of obtaining standard samples for XRF technology, the limitations of XRR and XRD technologies, and the efficiency issues of XRD measurement. By combining XRR and XRD technologies to provide standard sample information for XRF measurement, it can achieve the requirements of accuracy, stability, and high efficiency in film thickness and composition measurement.

[0097] Figure 6 This is a flowchart illustrating a measurement method provided in an embodiment of this application, as shown below. Figure 6 As shown, it includes:

[0098] Step S401, XRR measurement initial point location.

[0099] In this embodiment of the application, the thickness information of the initial point can be obtained by XRR measurement and analysis.

[0100] Step S402, XRD measurement of initial points.

[0101] In this embodiment of the application, XRD is used to measure and analyze the concentration information of each component at the initial point to obtain the concentration information of each component at that point.

[0102] Step S403: Use XRF measurement to obtain the XRF measurement spectrum at the initial location.

[0103] Step S404: Generate a mapping relationship based on XRF measurement spectrum, thickness information and component concentration.

[0104] In step S405, XRF measures other points and processes the data.

[0105] In this embodiment of the application, the thickness or component concentration at multiple points on the wafer can be measured.

[0106] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0107] According to the foregoing embodiments, this application provides a measuring device. The various modules and units included in the device can be implemented by a processor in a computer device; of course, they can also be implemented by specific logic circuits. In the implementation process, the processor can be a central processing unit (CPU), a microprocessor (MPU), a digital signal processor (DSP), or a field programmable gate array (FPGA), etc.

[0108] This application provides a measuring device. Figure 7 This is a schematic diagram of the structure of a measuring device provided in an embodiment of this application, such as... Figure 7 As shown, the measuring device 500 includes:

[0109] The acquisition module 501 is used to acquire the target parameters to be tested selected by the user.

[0110] The first measurement module 502 is used to control the measurement device corresponding to the target parameter to measure the target parameter value of the initial point on the sample based on the target parameter.

[0111] The second measurement module 503 is used to control the X-ray fluorescence analysis device to detect the initial point to obtain the first measurement spectrum of the initial point;

[0112] The first determining module 504 is used to calculate the theoretical fluorescence intensity of the initial point based on the target parameter value and the calculation relationship, and to determine the actual fluorescence intensity of the initial point based on the first measured spectrum, wherein the calculation relationship is the calculation relationship between the target parameter and the theoretical fluorescence intensity;

[0113] A module 505 is established to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial site and the theoretical fluorescence intensity of the initial site.

[0114] The second determining module 506 is used to determine the actual fluorescence intensity of the measurement point based on the second measurement spectrum detected by the X-ray fluorescence analysis device, and to calculate the theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship.

[0115] The calculation module 507 is used to calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

[0116] In some embodiments, when the target parameter includes thickness, the first measurement module 502 includes:

[0117] The first control unit is used to control the X-ray reflection device to measure the thickness value of an initial point on the sample based on the thickness.

[0118] In some embodiments, when the target parameter includes component concentration, the first measurement module 502 includes:

[0119] The second control unit is used to control the X-ray diffraction equipment to measure the component concentration value at the initial point on the sample based on the component concentration.

[0120] In some embodiments, when the target parameters include thickness and component concentration, the first measurement module 502 includes:

[0121] The first control unit is used to calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship;

[0122] The second control unit is used to control the X-ray diffraction equipment to measure the component concentration value at the initial point on the sample based on the component concentration.

[0123] In some embodiments, when there are multiple initial sites, establishing a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity based on the actual fluorescence intensity of the initial sites includes:

[0124] The actual fluorescence intensity and theoretical fluorescence intensity at each initial site are fitted to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity.

[0125] In some embodiments, the measuring device 500 further includes:

[0126] Angle acquisition module, used to acquire the light source angle of the incident light source of the measuring device corresponding to the target parameters;

[0127] The angle of the incident light source of the measuring device corresponding to the target parameter is adjusted based on the angle of the light source.

[0128] It should be noted that the information interaction and execution process between the above-mentioned devices / units are based on the same concept as the method embodiments of this application. For details on their specific functions and technical effects, please refer to the method embodiments section, and they will not be repeated here.

[0129] In addition, the measuring device described above can be a software unit, a hardware unit, or a combination of software and hardware. It can also be integrated into electronic devices as an independent component, or exist as an independent terminal device.

[0130] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0131] Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Figure 8 As shown, the electronic device 3 in this embodiment may include: at least one processor 30 ( Figure 8 Only one processor 30, memory 31, and computer program 32 stored in memory 31 and executable on at least one processor 30 are shown. When the processor 30 executes the computer program 32, it implements the steps in any of the above method embodiments, or the processor 30 executes the computer program 32 to implement the functions of each module / unit in the above device or system embodiments.

[0132] For example, computer program 32 may be divided into one or more modules / units, one or more of which are stored in memory 31 and executed by processor 30 to complete this application. One or more modules / units may be a series of computer program 32 instruction segments capable of performing a specific function, which describe the execution process of computer program 32 in electronic device 3.

[0133] This application also provides a computer-readable storage medium storing a computer program 32, which, when executed by a processor 30, implements the steps described in the above-described method embodiments.

[0134] This application provides a computer program product that, when run on an electronic device, enables the electronic device to perform the steps described in the various method embodiments above.

[0135] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments of this application can be implemented by a computer program 32 instructing related hardware. The computer program 32 can be stored in a computer-readable storage medium, and when executed by the processor 30, it can implement the steps of the various method embodiments described above. The computer program 32 includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. A computer-readable medium can include at least: any entity or device capable of carrying computer program code to a terminal, a recording medium, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium. Examples include USB flash drives, portable hard drives, magnetic disks, or optical disks. In some jurisdictions, according to legislation and patent practice, computer-readable media cannot be electrical carrier signals or telecommunication signals.

[0136] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0137] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0138] In the embodiments provided in this application, it should be understood that the disclosed apparatus / network devices and methods can be implemented in other ways. For example, the apparatus / network device embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0139] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0140] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A measurement method, characterized in that, include: Obtain the target parameters selected by the user for testing; Obtain the angle of the incident light source of the measuring device corresponding to the target parameters; Adjust the angle of the incident light source of the measuring device corresponding to the target parameter based on the light source angle; Based on the target parameters, control the measuring device corresponding to the target parameters to measure the target parameter values ​​of the initial points on the sample; The X-ray fluorescence analysis equipment is controlled to detect the initial point to obtain the first measurement spectrum of the initial point; The theoretical fluorescence intensity of the initial point is calculated based on the target parameter value and the calculation relationship, and the actual fluorescence intensity of the initial point is determined based on the first measured spectrum, wherein the calculation relationship is the calculation relationship between the target parameter and the theoretical fluorescence intensity; A mapping relationship between actual fluorescence intensity and theoretical fluorescence intensity is established based on the actual fluorescence intensity and theoretical fluorescence intensity of the initial sites. When there are multiple initial sites, establishing this mapping relationship includes: fitting the actual fluorescence intensity and theoretical fluorescence intensity of each initial site to establish the mapping relationship between the actual fluorescence intensity and theoretical fluorescence intensity. In the case of obtaining the second measurement spectrum of the measurement point detected by the X-ray fluorescence analysis equipment, the actual fluorescence intensity of the measurement point is determined based on the second measurement spectrum, and the theoretical fluorescence intensity of the measurement point is calculated based on the actual fluorescence intensity of the measurement point and the mapping relationship. The target parameter values ​​for the measurement points are calculated based on the theoretical fluorescence intensity at the measurement points and the calculated relationship.

2. The method according to claim 1, characterized in that, When the target parameter includes thickness, the step of controlling the measuring device corresponding to the target parameter to measure the target parameter value of the initial point on the sample based on the target parameter includes: The thickness value at an initial point on the sample is measured using the thickness-controlled X-ray reflection device.

3. The method according to claim 1, characterized in that, When the target parameter includes component concentration, the step of controlling the measuring device corresponding to the target parameter to measure the target parameter value at an initial point on the sample based on the target parameter includes: The component concentration values ​​at initial points on the sample are measured using the component concentration-controlled X-ray diffraction equipment.

4. The method according to claim 1, characterized in that, When the target parameters include thickness and component concentration, the step of controlling the measuring device corresponding to the target parameters to measure the target parameter values ​​at initial points on the sample based on the target parameters includes: The target parameter values ​​for the measurement points are calculated based on the theoretical fluorescence intensity at the measurement points and the calculation relationship. The component concentration values ​​at initial points on the sample are measured using the component concentration-controlled X-ray diffraction equipment.

5. A measuring device, characterized in that, include: The acquisition module is used to acquire the target parameters selected by the user for testing. Angle acquisition module, used to acquire the light source angle of the incident light source of the measuring device corresponding to the target parameters; Adjust the angle of the incident light source of the measuring device corresponding to the target parameter based on the light source angle; The first measurement module is used to control the measurement device corresponding to the target parameters to measure the target parameter values ​​of the initial points on the sample based on the target parameters. The second measurement module is used to control the X-ray fluorescence analysis equipment to detect the initial point to obtain the first measurement spectrum of the initial point; The first determining module is used to calculate the theoretical fluorescence intensity of the initial point based on the target parameter value and the calculation relationship, and to determine the actual fluorescence intensity of the initial point based on the first measured spectrum, wherein the calculation relationship is the calculation relationship between the target parameter and the theoretical fluorescence intensity; A module is established to establish a mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity of the initial sites. When there are multiple initial sites, establishing the mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity of the initial sites includes: fitting the actual fluorescence intensity and the theoretical fluorescence intensity of each initial site to establish the mapping relationship between the actual fluorescence intensity and the theoretical fluorescence intensity. The second determining module is used to determine the actual fluorescence intensity of the measurement point based on the second measurement spectrum detected by the X-ray fluorescence analysis device, and to calculate the theoretical fluorescence intensity of the measurement point based on the actual fluorescence intensity of the measurement point and the mapping relationship. The calculation module is used to calculate the target parameter value of the measurement point based on the theoretical fluorescence intensity of the measurement point and the calculation relationship.

6. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the method as described in any one of claims 1 to 4.

7. A measuring device, characterized in that, The device includes the electronic device, X-ray reflection device, X-ray diffraction device, and X-ray fluorescence analysis device as described in claim 6, wherein the electronic device is communicatively connected to the X-ray reflection device, X-ray diffraction device, and X-ray fluorescence analysis device.

8. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the method as described in any one of claims 1 to 4.

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