Splitable vertical furnace system

Abstract

The present application discloses a vertical furnace system capable of wafer splitting, which defines a heat treatment zone, a splitting zone, an inlet communicating with the heat treatment zone, and an outlet communicating with the splitting zone. The splitting zone is arranged adjacent to the heat treatment zone and communicates with each other. The vertical furnace system comprises at least one vertical furnace, at least one splitting assembly, and a wafer transmission assembly. The vertical furnace is used for heat treatment of wafers. The splitting assembly is used for wafer splitting after heat treatment by the vertical furnace. The wafer transmission assembly is configured to automatically transmit wafers from the inlet to the vertical furnace in the heat treatment zone for heat treatment, and after heat treatment of wafers by the vertical furnace, automatically transmit the wafers to the splitting zone, and send out the split wafers from the outlet. The present application helps to improve equipment output rate, reduce wafer contamination, and reduce customer equipment cost.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, specifically to a semiconductor manufacturing equipment, and more particularly to a vertical furnace system capable of cleaving wafers. Background Technology

[0002] Currently, the three most common heat treatment processes in semiconductor manufacturing are oxidation, diffusion, and annealing. Oxidation involves placing the silicon wafer in a high-temperature furnace and filling it with oxygen-containing gas to oxidize the silicon surface, forming a silicon oxide film to prevent dopants from entering the silicon surface. Diffusion, under high-temperature conditions, utilizes the principle of thermal diffusion to incorporate dopants into the silicon substrate according to process requirements, achieving a specific concentration distribution to alter the material's conductivity and form the structure of a semiconductor device. Annealing is a heating process that induces specific physical and chemical changes in the wafer; heat treatment can eliminate lattice defects on the wafer.

[0003] In semiconductor thermal processing, thermal reactors are essential. For wafers larger than 8 inches, vertical furnaces are typically used to perform processes such as thermal oxidation, diffusion, and annealing. The reasons for this are roughly as follows: First, in a vertical furnace, the silicon wafers are placed horizontally, preventing the support boat from bending due to gravity; the inherent upward heat flow of a vertical furnace also results in better uniformity in the thermal oxidation process. Second, it is easier to automate. Furthermore, it offers higher cleanliness and lower dust density; and third, vertical furnaces are smaller and require less floor space.

[0004] For example, in the debonding process of some advanced packaging processes, after ion implantation, the wafer is sent to a vertical furnace for heat treatment and then to a dicing machine for dicing. However, in current technology, vertical furnaces and dicing machines are mostly located in different areas of the factory (e.g., vertical furnaces are generally placed in the front-end wafer fabrication area, while dicing machines are placed in the back-end packaging area), and many packaging plants do not even have vertical furnaces. If heat treatment is required, it must be outsourced. This not only increases process turnaround time and leads to a decrease in production efficiency, but more seriously, it greatly increases the chance of the wafer being exposed to the atmosphere and other non-clean spaces. The wafer transfer process requires multiple manual operations, leading to a sharp increase in wafer fragmentation and contamination risks. In some wafer thinning and material layer transfer preparation processes, the wafer also needs to be heat-treated before dicing, and therefore faces the same problems. Summary of the Invention

[0005] One advantage of this invention is that it can combine the time-consuming thermal processing of semiconductors with the time-efficient subsequent dicing process, thereby effectively improving the processing efficiency of semiconductors without increasing the number of workpieces required for the original two processes.

[0006] Another advantage of this invention is that it enables automated processing of wafer thermal treatment and subsequent processes without increasing the floor space.

[0007] Another advantage of this invention is that the entire process of heat treatment and dicing is carried out in a relatively closed environment, thereby resulting in a high degree of cleanliness in the final processed wafer.

[0008] To achieve at least one of the above advantages of the present invention, the present invention provides a vertical furnace system capable of splitting wafers, the vertical furnace system defining a heat treatment zone, a splitting zone, an inlet communicating with the heat treatment zone, and an outlet communicating with the splitting zone, the splitting zone being arranged adjacent to and communicating with the heat treatment zone, wherein the vertical furnace system capable of splitting wafers includes:

[0009] At least one vertical furnace is used for heat treatment of the wafer;

[0010] At least one dicing assembly is used to dic the wafer after heat treatment in the vertical furnace;

[0011] A wafer transport assembly configured to automatically transport a wafer from the inlet to the vertical furnace in the heat treatment zone for heat treatment, and after the wafer has been heat-treated by the vertical furnace, automatically transport the wafer to the dicing zone and send the diced wafer out from the outlet.

[0012] In one optional embodiment of the present invention, the wafer transport assembly includes a first transport member configured to transport the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone, and after the wafer has been heat-treated by the vertical furnace, to transport the heat-treated wafer from the heat treatment zone to the dicing zone, and after the wafer has been diced by the dicing assembly in the dicing zone, to transmit the diced wafer from the dicing zone through the outlet.

[0013] In another alternative embodiment, the wafer transport assembly includes a first transport member and a second transport member. The first transport member is configured to transport the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone. The second transport member is configured to transport the heat-treated wafer from the heat treatment zone to the dicing zone after the wafer has been heat-treated by the vertical furnace, and to transport the diced wafer from the dicing zone to the dicing zone via the outlet after the wafer has been diced by the dicing assembly in the dicing zone.

[0014] In another alternative embodiment, the wafer transport assembly includes a first transport member and a second transport member. The first transport member is configured to transport the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone, and is configured to transport the heat-treated wafer from the heat treatment zone to the dicing zone after the wafer has been heat-treated by the vertical furnace. The second transport member is configured to transmit the diced wafer from the dicing zone via the outlet after the wafer has been diced by the dicing assembly in the dicing zone.

[0015] In another alternative embodiment, the wafer transport assembly includes a first transport member, a second transport member, and a third transport member. The first transport member is configured to transport the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone. The second transport member is configured to transport the heat-treated wafer from the heat treatment zone to the dicing zone after the wafer has been heat-treated by the vertical furnace. The third transport member is configured to transmit the diced wafer from the dicing zone through the outlet after the wafer has been diced by the dicing assembly in the dicing zone.

[0016] According to one embodiment of the present invention, the vertical furnace system for cleavable wafers includes a common transfer assembly, wherein the common transfer assembly is configured between the inlet and the outlet to transfer a wafer cassette carrying a wafer between the inlet and the outlet.

[0017] According to one embodiment of the present invention, the cleavable vertical furnace system includes a loading area adjacent to the heat treatment zone and a loading robot disposed between the loading area and the inlet, wherein the loading robot is configured to automatically transfer the wafer cassette carrying the wafer located in the loading area to the common transfer assembly located at the inlet; and / or, the cleavable vertical furnace system includes an unloading area adjacent to the outlet and an unloading robot disposed between the unloading area and the outlet, wherein the unloading robot is configured to automatically transfer the wafer cassette on the wafer transfer assembly located at the outlet to the unloading area.

[0018] According to one embodiment of the present invention, the dicing assembly includes a dicing unit, a wafer carrier unit, and an alignment unit. The wafer carrier unit has a carrier space, two side openings communicating with the carrier space from both sides, a front opening and a rear opening communicating with the carrier space from the front and rear. The wafer carrier unit has a plurality of carrier grooves on the inner walls of both sides forming the carrier space, facing the direction of the front opening, wherein the plurality of carrier grooves are arranged at equal intervals. The wafer transfer assembly is configured to transfer the heat-treated wafer in the vertical furnace from the front opening to the carrier groove.

[0019] The cleaving unit includes a plurality of cleaving components, wherein the plurality of cleaving components are also spaced apart along the direction of the plurality of bearing grooves;

[0020] The alignment unit is configured to align the center of the sidewall of the wafer located in the carrier space with the dicing unit in the plane direction of the wafer.

[0021] According to an embodiment of the present invention, the adjustment unit includes:

[0022] A guiding member is provided with the same number of alignment slots as the number of carrier slots in the direction facing the wafer. Each alignment slot has a bottom wall, side walls located on the upper and lower sides of the bottom wall, and an opening opposite the bottom wall. The alignment slot forms a side opening on the left and right sides along the plane of the wafer. The width of the bottom wall in the normal direction perpendicular to the wafer plane is adapted to the thickness of the wafer fed into the carrier space. The width of the alignment slot in the normal direction perpendicular to the wafer plane gradually increases from the bottom wall to the opening.

[0023] The second driving member, wherein the guiding member is movably connected to the second driving member along the wafer plane direction, and the guiding member, after being driven to move, can move into the carrier space along the wafer plane direction, and the side of the wafer located in the carrier space and confined in the carrier space can be guided to the bottom wall of the tank by the tank sidewall.

[0024] According to one embodiment of the present invention, the guide member has a plurality of alignment channels, wherein the number of alignment channels is the same as the number of alignment slots, the alignment channels extend in the same direction as the movement direction of the cleaving member and pass through the bottom wall of the slot, and the size of the alignment channels matches the thickness of the cleaving member, wherein the cleaving member is movably disposed in the alignment channels.

[0025] According to one embodiment of the present invention, the dicing assembly includes at least one dicing arm configured to move from the side opening of the wafer carrier unit into the carrier space in the direction of the wafer plane, and to hold two wafers diced from a single wafer at a predetermined distance in the carrier space.

[0026] According to one embodiment of the present invention, the shard assembly includes at least one pair of rotating units, the pair of rotating units being spaced apart from each other around the bearing space, wherein each rotating unit includes:

[0027] With a rotating wheel;

[0028] At least one third driving member, wherein the belt roller is movably disposed at the front opening of the wafer carrier unit, and the belt roller is synchronously rotatably connected to the third driving member about a normal direction perpendicular to the wafer plane direction, so that when the wafer transport assembly is held in the carrier space and the dicing unit is pressed against the wafer, the belt rollers in the two pairs of belt roller units can drive the wafer located in the carrier space to rotate about a normal direction perpendicular to the wafer plane direction.

[0029] According to one embodiment of the present invention, each of the rollers includes an inner body and an outer body. The outer body is hollow in the middle to form an installation space, and the inner body is disposed in the installation space. An elastic member is disposed between the inner wall of the outer body forming the installation space and the outer side of the inner body.

[0030] According to one embodiment of the present invention, the elastic member is configured as a plurality of tension springs; or, the elastic member is configured as an elastic sleeve, wherein the shape of the inner body is implemented as a prism, and the cross-sectional shape of the mounting space is implemented as a polygon adapted to the cross-sectional shape of the inner body.

[0031] According to an embodiment of the present invention, each of the rollers includes an inner body and an outer body. The outer body is hollow in the middle to form an installation space, and the inner body is disposed in the installation space. The inner body is shaped as a prism, and the cross-sectional shape of the installation space is a polygon that matches the cross-sectional shape of the inner body. The inner body can slide vertically into the installation space. A limiting plate is provided on the upper and lower sides of the inner body to limit the vertical movement of the outer body. An elastic sleeve is provided between the limiting plate and the outer body. Attached Figure Description

[0032] Figure 1 A perspective view of the vertical furnace system with shardable wafers described in this invention is shown from one angle.

[0033] Figure 2 A perspective view of the vertical furnace system with shardable wafers described in this invention is shown from another angle.

[0034] Figure 3 A front view of the vertical furnace system for splittable wafers according to the present invention is shown.

[0035] Figure 4 The diagram shows a perspective view of the splitting assembly portion of the vertical furnace system for splitting according to an embodiment of the present invention from a first angle.

[0036] Figure 5 This is a second perspective view of the splitting assembly portion of the vertical furnace system for splittable fracturing according to an embodiment of the present invention.

[0037] Figure 6 This is a third perspective view of the splitting assembly portion of the vertical furnace system for splittable fracturing according to one embodiment of the present invention.

[0038] Figure 7 A top view of the splitting assembly portion of the vertical furnace system for splittable fracturing according to an embodiment of the present invention is shown.

[0039] Figure 8 It shows Figure 7 The view shown is a cross-sectional view along the HH direction.

[0040] Figure 9 A perspective view of a portion of the structure with a rotating wheel described in one embodiment is shown.

[0041] Figure 10 A cross-sectional view of a portion of the structure with a rotating wheel described in another embodiment is shown.

[0042] Figure 11 The diagram shows cross-sectional views of the vertical furnace system with shards described in the first embodiment of the present invention in three different states along the AA direction.

[0043] Figure 12 A cross-sectional view of the vertical furnace system with shards described in the second embodiment of the present invention in one state is shown along the AA direction.

[0044] Figure 13 The second embodiment of the present invention is shown in a modified embodiment of the vertical furnace system with shards described in the second embodiment of the present invention, in a state of cross-sectional view along the AA direction.

[0045] Figure 14 A cross-sectional view along the AA direction of the vertical furnace system with shards described in the third embodiment of the present invention is shown in one state.

[0046] Figure 15 A cross-sectional view along the BB direction of the vertical furnace system for splittable wafers described in this invention is shown.

[0047] Figure 16 A cross-sectional view along the CC direction of the vertical furnace system for splittable fragments according to the present invention is shown.

[0048] Figure 17 A top view of the vertical furnace system for applying the shardable fragments is shown.

[0049] Figure 18 A cross-sectional view of the vertical furnace system of the shardable wafers according to another embodiment of the present invention is shown. Detailed Implementation

[0050] The following description is intended to disclose the present invention and enable those skilled in the art to implement it. The preferred embodiments described below are merely examples, and other obvious variations will occur to those skilled in the art. The basic principles of the invention defined in the following description can be applied to other embodiments, modifications, improvements, equivalents, and other technical solutions that do not depart from the spirit and scope of the invention.

[0051] Those skilled in the art should understand that, in the disclosure of this invention, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limiting this invention.

[0052] It is understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element can be multiple, and the term "a" should not be understood as a limitation on the number.

[0053] refer to Figures 1-18 As shown, a preferred embodiment of the present invention, a vertical furnace system for wafer dicing, will be described in detail. This system includes at least one vertical furnace 10, at least one dicing assembly 20, and a wafer transfer assembly 30, all integrated on the same equipment and placed in the same area within the factory. In some examples, all three may be housed within the same enclosed enclosure. In some examples, FFUs (Fan Filter Units) may be installed in areas such as the top of the enclosure to improve cleanliness within the enclosure.

[0054] The vertical furnace system for cleaving wafers defines at least one heat treatment zone 101 and an inlet 102 communicating with the heat treatment zone 101 at the location of each vertical furnace 10. Furthermore, the vertical furnace system for cleaving wafers defines a cleaving zone 103 and an outlet 104 communicating with the cleaving zone 103 at the location of the cleaving assembly 20. The cleaving zone 103 and the heat treatment zone 101 are typically adjacent to and communicate with each other. The aforementioned vertical furnace 10 is located in the heat treatment zone 101, and the cleaving assembly 20 is located in the cleaving zone 103.

[0055] Those skilled in the art will understand that the inlet 102 and / or the outlet 104 are implemented as openable and closable structures. For example, an automatically opening door can be provided in the inlet 102 and / or the outlet 104, thereby enabling the inlet 102 and / or the outlet 104 to switch between open and closed states.

[0056] It is understood that the heat treatment zone 101 and the dicing zone 103 each have relatively independent and enclosed spaces for performing their respective processes. For example, the heat treatment zone 101 includes at least one openable vertical furnace tube, and the dicing zone includes a dicing box. The vertical furnace tube and the dicing box can be physically isolated by a solid partition wall or other physical isolation structure. Communication between the two is achieved by setting a door on the isolation structure. The advantage of this arrangement is that it minimizes process interference, including thermal interference, between the two process zones. In other examples, there may be no physical isolation structure between the vertical furnace tube and the dicing box. This arrangement can greatly improve the wafer transfer efficiency between the two process spaces. Alternatively, the two process spaces can be isolated by an air curtain formed by a top-down inert gas flow, which avoids process interference, improves wafer transfer efficiency, and further enhances the cleanliness of the common space.

[0057] Specifically, the vertical furnace 10 is used to heat-treat the wafer to bring it into a state suitable for subsequent dicing. Those skilled in the art will understand that the methods used by the vertical furnace 10 to heat-treat the wafer include, but are not limited to, oxidation, diffusion, or annealing. For example, in some examples, the vertical furnace system of the present invention can be used for debonding processes, the process of which involves the wafer transport component 30 placing the ion-implanted wafer into the heat treatment zone of the present invention for high-temperature heating to create cracks in a predetermined depth, and then transferring the heat-treated and cracked wafer to the dicing zone for splitting. In other examples, the vertical furnace system of the present invention can be used for wafer thinning processes, the process of which is similar to the debonding process. The wafer to be diced can be a composite wafer such as an SOI wafer, or a single-crystal silicon or polycrystalline silicon wafer or other single-material wafer. The vertical furnace can heat-treat multiple wafers simultaneously, for example, it can process more than 5 lots of wafers at the same time. The high-temperature heating and annealing process can be carried out in a vacuum or in an inert gas atmosphere, depending on the process requirements. In this embodiment, there are no restrictions on the specific execution method of the heat treatment or the specific structure of the vertical furnace. The slicing assembly can be a single-piece processing structure or a multi-piece processing structure. In this embodiment, the latter is preferred, as the combination of two multi-piece processing units will significantly improve the equipment output rate.

[0058] like Figures 4-8 As shown, especially the reference Figure 8In one embodiment, the dicing assembly 20 includes a dicing unit 21 for performing the dicing operation and a wafer carrier unit 22 for carrying and fixing the wafer during the dicing process. The wafer transfer assembly 30 is configured to transfer the wafer, after heat treatment by the vertical furnace 10, to the wafer carrier unit 22. The dicing unit 21 is configured to physically separate the wafer to be diced after heat treatment by the vertical furnace 10 and located in the wafer carrier unit 22, thereby splitting the wafer to be diced from a single wafer into two wafers.

[0059] The structure of the wafer carrier unit 22 must be suitable for the dicing assembly 20 to perform the dicing operation, while still being able to support and fix the wafer. (Reference) Figures 4-6 In one embodiment, the wafer carrier unit 22 has a carrier space 2201, side openings 2202 communicating with the carrier space 2201 and located on both sides of the wafer carrier unit 22, a front opening 2203 communicating with the carrier space 2201 and located on the front side of the wafer carrier unit 22, and a rear opening 2204 communicating with the carrier space 2201 and located on the rear side of the wafer carrier unit 22.

[0060] In a more specific example, the wafer carrier unit 22 has a plurality of carrier grooves 2205 on the inner walls of both sides forming the carrier space 2201, facing the front opening 2203. The plurality of carrier grooves 2205 can be arranged at equal intervals to subsequently carry the wafer. It is worth noting that each carrier groove 2205 also has a slot facing the side opening 2202.

[0061] The wafer transfer assembly 30 is adapted to the structure of the wafer carrier unit 22. For example, to adapt to the structure of the wafer carrier unit 22 described above, it is configured to feed the heat-treated wafer into the carrier space 2201 from the front opening 2203, and to carry each wafer in the carrier groove 2205. Subsequently, the wafer transfer assembly 30 exits the carrier space 2201 so that the subsequent dicing unit 21 can dic the wafer located in the carrier space 2201, and the diced wafer is also removed through the front opening 2203.

[0062] During the dicing process, the dicing unit 21 is aligned with the rear opening 2204 of the wafer carrier unit 22 and is configured to move toward or away from the rear opening 2204 so as to move into or out of the carrier space 2201.

[0063] Preferably, the dicing unit 21 includes a plurality of dicing members 211, not more than the number of the carrier grooves 2205. The plurality of dicing members 211 are also arranged at intervals along the direction of the arrangement of the plurality of carrier grooves 2205. After the dicing unit 21 moves into the carrier space 2201 in the direction of the rear opening 2204, the dicing member 211 can pass through the rear opening 2204 and press against the dicing layer of the wafer sidewall in the carrier groove 2205 from the plane direction of the wafer, so as to further penetrate into the wafer interior from the wafer sidewall in the subsequent process, thereby splitting each wafer into two wafers.

[0064] In a preferred example, the dicing unit 21 further includes a first driving member 212, wherein the dicing member 211 is movably connected to the first driving member 212 so that the dicing member 211 can move toward or away from the rear opening 2204. Preferably, a plurality of the dicing members 211 are movably connected to the same first driving member 212 synchronously. In another embodiment, each dicing member 211 is configured with one first driving member 212, so that each dicing member 211 can move independently toward or away from the rear opening 2204 depending on the specific wafer to be diced, meeting more diverse dicing requirements.

[0065] More preferably, the dicing assembly 20 further includes an alignment unit 23, wherein the alignment unit 23 is configured to align the dicing layer located on the sidewall of the wafer in the carrier space 2201 with the dicing member 211 from the plane direction of the wafer, for example, to align the two in the longitudinal direction, thereby improving dicing accuracy.

[0066] In one specific example, the alignment unit 23 includes a guide member 231 and a second drive member 232, wherein the guide member 231 is movably connected to the second drive member 232 along the wafer plane direction, and the guide member 231 is disposed next to the wafer carrier unit 22 so that after the guide member 231 is driven by the second drive member 232, it can move into the carrier space 2201 along the wafer plane direction.

[0067] More specifically, the guide member 231 is provided with the same number of adjustment slots 23101 as the number of carrier slots 2205 in the direction toward the wafer.

[0068] refer to Figure 6 and Figure 8Each of the adjustment slots 23101 has a bottom wall 231011, side walls 231012 located on the upper and lower sides of the bottom wall 231011, and a slot opening 231013 opposite to the bottom wall 231011. A side slot opening 231014 is formed on the left and right sides of the adjustment slot 23101 along the plane of the wafer.

[0069] The width of the bottom wall 231011 of the adjustment groove in the direction perpendicular to the wafer plane is adapted to the thickness of the wafer fed into the support space 2201. The width of the adjustment groove 23101 in the direction perpendicular to the wafer plane gradually increases from the bottom wall 231011 towards the groove opening 231013. This results in the sidewall 231012 of the entire adjustment groove 23101 forming a sloped guide mechanism. That is, when the guide member 231 is driven by the second drive member 232 to extend into the carrier space 2201 along the wafer plane direction, even if the bottom wall 231011 of the alignment groove 23101 is not aligned with the wafer located at the corresponding plane position, the side wall 231012 of the alignment groove 23101 first abuts against the wafer. As the guide member 231 continues to move into the carrier space 2201, the wafer located in the carrier space 2201 will be pressed and guided by the side wall 231012, so that the side wall of the wafer can slide down to the position of abutting against the bottom wall 231011.

[0070] Those skilled in the art will understand that, in this manner, the sidewall of the wafer can be held in place by the bottom wall 231011 of the slot. This allows the dicing member 211 to accurately press against the dicing layer of the wafer sidewall when the wafer is held in a predetermined position by the alignment unit 23, thereby ensuring the alignment between the dicing member 211 and the wafer. The alignment refers to the amount of offset by which the dicing member 211 contacts the dicing layer of the wafer sidewall during dicing; a larger offset results in lower alignment, and a smaller offset results in higher alignment.

[0071] refer to Figure 8Preferably, the alignment unit 23 is also disposed beside the rear opening 2204 of the wafer carrier unit 22, and the guide member 231 has the same number of alignment channels 23102 as the alignment slots 23101. The alignment channels 23102 extend in the same direction as the moving direction of the dicing member 211, wherein the alignment channels 23102 pass through the bottom wall 231011 of the guide member 231, and the size of the alignment channels 23102 matches the thickness of the dicing member 211. In this way, not only can the dicing member 211 dice the wafer located in the carrier space 2201 from the alignment channels 23102 via the slot opening 231013 of the alignment slots 23101, but the dicing member 211 can also be limited to avoid shaking during dicing and reducing the success rate of dicing.

[0072] In one embodiment, the cleaving member 211 is implemented as a cutter or a pin, the specific size of which can be determined as needed, and its material can also be flexibly selected according to the material of the wafer to be cleaved, such as a high-hardness material like diamond. This embodiment does not impose strict limitations on this. Preferably, the thickness of the outer edge portion of the cleaving member 211 in the vertical cross-section gradually increases from the outside to the inside, thereby forming a sharp cleaving edge on the edge of the cleaving member 211. Furthermore, the thickness of other portions of the cleaving member 211 in the vertical cross-section is adapted to the dimensions of the alignment channel 23102 in the vertical cross-section.

[0073] Those skilled in the art will also understand that by arranging both the alignment unit 23 and the dicing component 211 of the dicing unit 21 on the rear side of the wafer carrier unit 22, i.e. the side away from the front opening 2203, not only can the space occupied by the dicing assembly 20 be effectively reduced, but more space can also be freed up around the wafer carrier unit 22 for arranging other components.

[0074] refer to Figure 5 and Figure 6 In a further example, the dicing assembly 20 also includes at least one dicing arm 24, wherein the dicing arm 24 is used to hold two wafers formed after the same wafer is diced at a predetermined distance in the carrier space 2201.

[0075] Specifically, in one embodiment, the splitting arm 24 is configured to move from the side opening 2202 of the wafer carrier unit 22 into the carrier space 2201 in the wafer plane direction, and the splitting arm 24 can gradually extend into the splitting layer of the wafer as the splitting member 211 progresses to support one of the split wafers, while the other wafer split from the same wafer is still supported by the carrier groove 2205 of the wafer carrier unit 22, so that the two wafers split from the same wafer are kept in the carrier space 2201 at a predetermined distance, which facilitates the subsequent wafer separation and removal.

[0076] As an example, the splitting arm 24 is configured to rotate about a normal direction perpendicular to the wafer plane direction, thereby allowing the splitting arm 24 to be rotated between the two split wafers and to be rotated out of the carrier space 2201 after all wafers in the carrier space 2201 have been removed. Those skilled in the art will understand that, equivalently, the splitting arm 24 can also be configured to move into or out of the carrier space 2201 along the wafer plane direction.

[0077] In a preferred embodiment, the dicing assembly 20 includes at least two holding arms 24, each holding the same wafer diced from the side opening 2202 of the wafer carrier unit 22, thereby improving wafer stability. Preferably, each holding arm 24 may have an arcuate surface adapted to the edge of the wafer, with an arc angle, for example, between 30° and 90°, and a radial distance along the wafer, for example, 3-5 cm.

[0078] Those skilled in the art should understand that, in the aforementioned preferred embodiment, because the dicing components 211 of the alignment unit 23 and the dicing unit 21 are arranged on the rear side of the wafer carrier unit 22, more space is provided on both sides of the wafer carrier unit 22, thus allowing for the preferred arrangement of two dicing arms 24 in this embodiment.

[0079] Furthermore, the sharding assembly 20 includes at least one pair of rotating units 25, which are spaced apart around the bearing space 2201.

[0080] Each of the conveyor units 25 includes at least one conveyor roller 251 and at least one third driving member (not shown in the figure). The conveyor roller is provided with a structure for holding the wafer. The third driving member can not only drive the conveyor roller to rotate, but also drive the conveyor roller to move horizontally, so that the conveyor roller abuts or moves away from the wafer. The cooperation of the paired conveyor rollers allows the vertical furnace system of the present invention to be used for processing wafers of different sizes. Preferably, the roller 251 is movably disposed at the front opening 2203 of the wafer carrier unit 22, and the roller 251 is rotatably connected to the third drive member about a normal direction perpendicular to the wafer plane direction. This allows the wafer transfer assembly 30 to feed the heat-treated wafer from the front opening 2203 into the carrier groove 2205 of the carrier space 2201 after the roller 251 moves away from the front opening 2203. When the wafer is fed into the carrier space 2201, the assembly can prevent the wafer from moving out of the carrier space 2201 toward the front opening 2203. In some examples, each roller 251 may have multiple slots (e.g., matching the number of dicing components) spaced along its axial direction, and the surface of the slots in contact with the wafer may have a wear-resistant cushioning material to reduce wafer damage.

[0081] In some examples, when the dicing member 211 presses against the wafer located in the carrier space 2201 from the rear opening 2204 of the wafer carrier unit 22, the belt roller 251 can stop the wafer at the front opening 2203 opposite to the rear opening 2204, causing the wafer to abut against the belt roller 251. Subsequently, as the third drive member drives the belt roller 251, the wafer located in the carrier space 2201 and abutting against the belt roller 251 will be driven to rotate in the carrier space 2201. Since the dicing member 211 remains stationary while the wafer is driven to rotate, the wafer is diced into two wafers by being spin-cut around its perimeter.

[0082] In other words, in this embodiment, the rotating wheel 251 not only prevents the wafer from moving out of the front opening 2203, but can also be driven by the third driving member to rotate the wafer located in the carrying space 2201, thereby causing the wafer to cleave. In other examples, the cleaving assembly can be rotated while the wafer is fixed, or the cleaving assembly and the wafer can be rotated in opposite directions to perform the cleaving operation; there is no strict limitation on this.

[0083] Furthermore, preferably, each of the rollers 251 has a self-adjusting structure with self-adjusting compensation function. This structure is used to re-match the position and absorb excessive force when the wafer position and force unexpectedly exceed limits during the dicing process. It can be flexibly adjusted according to the wafer condition, helping to improve production yield and equipment adaptability. For example, in one embodiment, the roller 251 includes an inner body 2511 and an outer body 2512. The outer body 2512 is hollow in the middle to form an installation space 251201, and the inner body 2511 is disposed in the installation space 251201. An elastic member 253 is provided between the inner wall of the outer body 2512 forming the installation space 251201 and the outer side of the inner body 2511. This allows the outer body 2512 to adaptively adjust the magnitude of the contact force with the wafer after contacting it, effectively preventing the wafer from deforming due to excessive pressure from the rollers 251.

[0084] refer to Figure 5 and Figure 9 In one embodiment, the elastic member 253 is configured as a plurality of tension springs. More preferably, the elastic member 253 is configured as at least three tension springs, wherein one end of each tension spring is connected to the outer wall of the inner body 2511, and the other end is connected to the inner wall of the outer body 2512. It is worth mentioning that, since the tension springs themselves can be stretched, shortened, and twisted, the outer body 2512 can move relative to the inner body 2511 along the plane in which the elastic member 253 is arranged and along the plane perpendicular to which the wafer is arranged. In this way, the outer body 2512 can adaptively adjust its spatial position as the wafer position changes, and thus can adaptively adjust the magnitude of the contact force with the wafer.

[0085] Preferably, the splitting assembly 20 is provided with at least one pair of the rotating units 25 on both sides of the front opening 2203.

[0086] Preferably, each pair of rotating units 25 is symmetrically arranged relative to the cleaving member 211, so as to effectively ensure the uniformity of force when the wafer is rotated.

[0087] More preferably, when the elastic member 253 is configured as a tension spring, in each pair of the rotating units 25, the elastic member 253 in one of the rotating units 25 is inclined upward relative to the wafer plane direction from the inner body 2511, while the elastic member 253 in the other rotating unit 25 is inclined downward relative to the wafer plane direction from the inner body 2511.

[0088] Since each pair of rotating units 25 is symmetrically arranged relative to the dicing member 211, when the wafer is rotated by each pair of rotating units 25, the component force of the outer body 2512 of one rotating unit 25 along the vertical direction of the wafer can be offset by the component force of the outer body 2512 of the other rotating unit 25 along the vertical direction of the wafer. This effectively ensures the stability of the wafer when it is rotated, thereby improving the dicing yield.

[0089] refer to Figure 5 and Figure 10 In another embodiment, the elastic member 253 is implemented as an elastic sleeve, which is, for example, fitted between the inner body 2511 and the outer body 2512. The inner body 2511 is prism-shaped, and the cross-sectional shape of the mounting space 251201 is also polygonal, adapted to the cross-sectional shape of the inner body 2511. This effectively reduces the relative rotation amplitude of the outer body 2512 relative to the inner body 2511 when rotating the wafer.

[0090] More preferably, in any of the above embodiments, a limiting plate 254 is provided on the upper and lower sides of the inner body 2511 to limit the range of vertical movement of the outer body 2512.

[0091] Preferably, when the elastic member 253 is implemented as an elastic sleeve, an elastic sleeve is also provided between the limiting plate 254 and the outer body 2512.

[0092] It is worth mentioning that in the previous embodiment, because the tension spring is elastic, when the outer body 2512 rotates, the deformation of the tension spring must first be offset before the wafer can rotate, meaning the relative rotation amplitude of the outer body 2512 relative to the inner body 2511 is relatively large. However, when the elastic member 253 is implemented as an elastic sleeve, the relative rotation amplitude of the outer body 2512 relative to the inner body 2511 when driving the wafer to rotate can be effectively reduced.

[0093] In a modified embodiment, the elastic member 253 is not provided between the inner body 2511 and the outer body 2512. The inner body 2511 is prism-shaped, and the cross-sectional shape of the mounting space 251201 is a polygon adapted to the cross-sectional shape of the inner body 2511. However, the inner body 2511 can slide vertically into the mounting space 251201. In this modified embodiment, a limiting plate 254 is provided on the upper and lower sides of the inner body 2511 to limit the vertical movement of the outer body 2512, and an elastic sleeve is provided between the limiting plate 254 and the outer body 2512. This completely prevents the outer body 2512 from rotating relative to the inner body 2511 when rotating the wafer, while also adapting to the vertical deflection of the wafer.

[0094] Preferably, the wafer carrier unit 22 is rotatably connected to the flipping unit 26 so that the rear opening 2204 of the wafer carrier unit 22 faces vertically. This allows the wafer located in the wafer carrier unit 22 to be cleaved vertically by the cleaving unit 21. For example, in one example, the cleaving unit 21 is initially located directly below the wafer to be cleaved, cleaving the wafer from bottom to top. In other examples, the cleaving unit 21 is initially located directly above the wafer to be cleaved, cleaving the wafer from top to bottom. In still other examples, there may be more than one cleaving unit 21, moving towards the wafer center from different directions to perform cleaving.

[0095] Furthermore, after the wafer in the carrier space 2201 of the wafer carrier unit 22 is cleaved, the two wafers facing each other are called cleaved surfaces. To prevent particulate impurities from the cleaved surfaces from falling and contaminating the wafer transport assembly and other components, and to ensure stable wafer transport (the non-cleaved surface can better fit with the transport assembly), the flipping unit 26 can first flip the rear opening 2204 of the wafer carrier unit 22 back to its original rearward position, and the wafer transport assembly 30 can first remove the wafer with the cleaved surface facing upward from the carrier space 2201. Subsequently, the flipping unit 26 can flip the wafer carrier unit 22 180 degrees, so that the other half of the wafer with the cleaved surface facing down can be flipped so that the cleaved surface faces up, so that the wafer transport assembly 30 can then remove it from the carrier space 2201.

[0096] refer to Figure 11In a first embodiment, the wafer transport assembly 30 includes a first transport member 31. The first transport member 31 is configured to transport the wafer requiring heat treatment from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101, and after the wafer has been heat-treated by the vertical furnace 10, to transport the heat-treated wafer from the heat treatment zone 101 to the dicing zone 103, and after the wafer has been diced by the dicing assembly 20 in the dicing zone 103, to transport the diced wafer from the dicing zone 103 through the outlet 104.

[0097] It is understood that, in this embodiment, since the wafer can be fed in, transferred between the heat treatment zone 101 and the dicing zone 103 and fed out through the same first transfer member 31, the overall volume of the dicing vertical furnace system of the present invention is smaller than that of the prior art scheme in which the dicing assembly and the heat treatment furnace are set up separately.

[0098] refer to Figure 12 In a second embodiment, the wafer transport assembly 30 includes a first transport member 31 and a second transport member 32. The first transport member 31 is configured to transport the wafer requiring heat treatment from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101. The second transport member 32 is configured to, after the wafer has been heat-treated by the vertical furnace 10, transport the heat-treated wafer from the heat treatment zone 101 to the dicing zone 103, and, after the wafer has been diced by the dicing assembly 20 in the dicing zone 103, transmit the diced wafer from the dicing zone 103 through the outlet 104.

[0099] refer to Figure 13 In a modified embodiment of the second embodiment, the first transfer member 31 is configured to transfer the wafer requiring heat treatment from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101, and is configured to transfer the heat-treated wafer from the heat treatment zone 101 to the dicing zone 103 after heat treatment by the vertical furnace 10. The second transfer member 32 is configured to transfer the diced wafer from the dicing zone 103 via the outlet 104 after the wafer has been diced by the dicing assembly 20 in the dicing zone 103.

[0100] refer to Figure 14In another embodiment, the wafer transport assembly 30 includes a first transport member 31, a second transport member 32, and a third transport member. The first transport member 31 is configured to transport the wafer requiring heat treatment from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101. The second transport member 32 is configured to transport the heat-treated wafer from the heat treatment zone 101 to the dicing zone 103 after heat treatment by the vertical furnace 10. The third transport member is configured to transport the diced wafer from the dicing zone 103 via the outlet 104 after the wafer has been diced by the dicing assembly 20 in the dicing zone 103.

[0101] Those skilled in the art will understand that, in this invention, the first transmission member and / or the second transmission member and / or the third transmission member are configured as a wafer transfer robot, and preferably as a structure capable of transferring multiple wafers simultaneously.

[0102] refer to Figure 12 and Figure 15 In a preferred embodiment, the cleavable vertical furnace system further includes a common transfer assembly 40, wherein the common transfer assembly 40 includes components configured between the inlet 102 and the outlet 104 to transfer the wafer cassette 800 between the inlet 102 and the outlet 104, thereby allowing the wafer transport assembly 30 to retrieve the wafer from the wafer cassette 800 located at the inlet 102, and to hold the wafer retrieved by the wafer transport assembly 30 from the outlet 104.

[0103] In a preferred embodiment, the shared transfer assembly 40 includes a transfer guide 41 arranged along the arrangement direction of the inlet 102 and the outlet 104, and a wafer cassette transfer robot 42 disposed on the transfer guide 41, wherein the transfer guide 41 is configured to extend from the inlet 102 to the outlet 104, and the wafer cassette transfer robot 42 is used to carry the wafer cassette 800 containing the wafers requiring heat treatment and dicing; the wafer transfer assembly 30 is configured to transfer the wafers located at the inlet 102... The wafer in wafer cassette 800 is fed into the vertical furnace 10 for heat treatment; and the wafer transfer assembly 30 is configured to automatically transfer the wafer processed by the dicing assembly 20 to the wafer cassette 800 on the wafer cassette transfer robot 42 at the exit 104, wherein the wafer cassette 800 on the wafer cassette transfer robot 42 at the exit 104 is the same wafer cassette 800 that was transferred from the inlet 102 via the wafer cassette transfer robot 42 along the transfer guide 41.

[0104] Those skilled in the art will understand that this configuration not only allows for the automatic transfer of the wafers within the entire device, effectively improving wafer cleanliness, but also significantly reduces the need for additional floor space. This, in turn, effectively increases user acceptance of the entire cleavable vertical furnace system.

[0105] refer to Figures 10 to 14 Preferably, the cleavable vertical furnace system includes a loading zone 105 adjacent to the heat treatment zone 101 and a loading robot 50 disposed between the loading zone 105 and the inlet 102, wherein the loading robot 50 is configured to automatically transfer the wafer cassette 800 containing the wafer located in the loading zone to the common transfer assembly 40 located in the inlet 102, so that the wafer transfer assembly 30 can subsequently pick up and place the wafer from the wafer cassette 800.

[0106] Those skilled in the art will know that, in this embodiment, the wafer can be automatically uploaded without occupying additional area.

[0107] refer to Figures 12 to 14 Preferably, the cleavable vertical furnace system includes an unloading area 106 adjacent to the outlet 104 and an unloading robot 60 disposed between the unloading area 106 and the outlet 104. The unloading robot 60 is configured to automatically transfer the wafer cassette 800 located on the wafer transfer assembly 30 at the outlet 104 to the unloading area 106. The loading area and unloading area can be optionally provided or simultaneously provided; in this embodiment, the latter is preferred. This allows the vertical furnace system of the present invention to be better compatible with other process equipment in the plant, improving the level of automation.

[0108] Those skilled in the art will understand that, in this embodiment, the wafer can be automatically unloaded without occupying additional area.

[0109] More preferably, the unloading robot 60 and the loading robot 50 are implemented as the same robot. That is, in a preferred embodiment of the present invention, the vertical furnace system for cleavable wafers can use the same robot to load and unload the wafer cassette 800.

[0110] In some examples, the number of wafers that the dicing assembly 20 can dice in a single run is the same as the number of wafers that the vertical furnace can process in a single run. In other examples, the number of wafers that the dicing assembly 20 can dice in a single run is less than the number of wafers that the vertical furnace can process in a single run, for example, one-fifth or less. In this case, such as... Figure 18As shown, in a preferred embodiment, the vertical furnace system for splitting wafers includes at least two of the splitting assemblies 20 and one vertical furnace 10 to further improve the overall output of the system.

[0111] The vertical furnace system for wafer dicing of this invention can be used not only for debonding processes in advanced packaging, but also for wafer thinning processes in front-end wafer manufacturing and for the transfer and preparation of third-generation semiconductor materials. Its heat treatment and dicing functions can also be used independently, meeting the diverse needs of various fab plants, packaging plants, silicon wafer plants, research institutes, and other organizations. This multi-functional approach helps reduce customer equipment costs and increase user productivity.

[0112] Those skilled in the art should understand that the embodiments of the present invention described above and shown in the accompanying drawings are merely examples and do not limit the invention. The advantages of the present invention have been fully and effectively realized. The functional and structural principles of the present invention have been demonstrated and explained in the embodiments; any variations or modifications can be made to the implementation of the present invention without departing from these principles.

Claims

1. A vertical furnace system capable of splitting flasks, characterized in that, The vertical furnace system for splitting wafers defines a heat treatment zone, a splitting zone, an inlet communicating with the heat treatment zone, and an outlet communicating with the splitting zone. The splitting zone is arranged adjacent to and communicates with the heat treatment zone. The vertical furnace system for splitting wafers includes: At least one vertical furnace is used to heat-treat the wafer to bring it into a state where it can be subsequently cleaved. At least one dicing assembly is used to dic the wafer after heat treatment in the vertical furnace; A wafer transfer assembly, which is integrated with the vertical furnace and the dicing assembly on the same equipment and placed in the same area, is configured to automatically transfer the wafer from the inlet to the vertical furnace in the heat treatment area for heat treatment, and after the wafer is heat treated by the vertical furnace, automatically transfer the wafer to the dicing area and send the diced wafer out from the outlet. The dicing assembly is a single-wafer processing structure or a multi-wafer processing structure, which includes a dicing unit that performs the dicing operation and a wafer carrier unit that carries and fixes the wafer during the dicing process. The dicing unit is used to dic the wafer to be diced from a single wafer to two wafers from the sidewall.

2. The vertical furnace system for splittable flakes according to claim 1, characterized in that, The wafer transfer component is configured in one of the following ways. 1) The wafer transport assembly includes a first transport member configured to transport the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone, and after the wafer has been heat-treated by the vertical furnace, to transport the heat-treated wafer from the heat treatment zone to the dicing zone, and after the wafer has been diced by the dicing assembly in the dicing zone, to transport the diced wafer from the dicing zone through the outlet; 2) The wafer transfer assembly includes a first transfer member and a second transfer member. The first transfer member is configured to transfer the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment area. The second transfer member is configured to transfer the heat-treated wafer from the heat treatment area to the dicing area after the wafer has been heat-treated by the vertical furnace, and to transfer the diced wafer from the dicing area to the dicing area via the outlet after the wafer has been diced by the dicing assembly in the dicing area. 3) The wafer transfer assembly includes a first transfer member and a second transfer member. The first transfer member is configured to transfer the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone, and is configured to transfer the heat-treated wafer from the heat treatment zone to the dicing zone after the wafer has been heat-treated by the vertical furnace. The second transfer member is configured to transfer the diced wafer from the dicing zone to the outlet after the wafer has been diced by the dicing assembly in the dicing zone. 4) The wafer transfer assembly includes a first transfer member, a second transfer member, and a third transfer member. The first transfer member is configured to transfer the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone. The second transfer member is configured to transfer the heat-treated wafer from the heat treatment zone to the dicing zone after the wafer has been heat-treated by the vertical furnace. The third transfer member is configured to transfer the diced wafer from the dicing zone to the outlet after the wafer has been diced by the dicing assembly in the dicing zone.

3. The vertical furnace system for splittable flakes according to claim 1 or 2, characterized in that, The vertical furnace system for cleavable wafers includes a common transfer assembly configured between the inlet and the outlet to transfer wafer cassettes carrying wafers between the inlet and the outlet.

4. The vertical furnace system for splittable flakes according to claim 3, characterized in that, The vertical furnace system for cleavable wafers includes a loading zone adjacent to the heat treatment zone and a loading robot disposed between the loading zone and the inlet, wherein the loading robot is configured to automatically transfer wafer cassettes containing the wafers located in the loading zone to the common transfer assembly located at the inlet; and / or, The vertical furnace system for cleavable wafers includes an unloading area adjacent to the outlet and an unloading robot disposed between the unloading area and the outlet, wherein the unloading robot is configured to automatically transfer the wafer cassette on the wafer transport assembly located at the outlet to the unloading area.

5. The vertical furnace system for splittable fracturing according to claim 1, characterized in that, The dicing assembly includes an alignment unit. The wafer carrier unit has a carrier space, two side openings communicating with the carrier space from both sides, a front opening and a rear opening communicating with the carrier space from the front and back. The wafer carrier unit has a plurality of carrier grooves on the inner walls of both sides forming the carrier space, facing the direction of the front opening. The plurality of carrier grooves are arranged at equal intervals. The wafer transfer assembly is configured to transfer the heat-treated wafer in the vertical furnace from the front opening to the carrier groove. The cleaving unit includes a plurality of cleaving components, wherein the plurality of cleaving components are also spaced apart along the direction of the plurality of bearing grooves; The alignment unit is configured to align the center of the sidewall of the wafer located in the carrier space with the dicing unit in the plane direction of the wafer.

6. The vertical furnace system for splittable flakes according to claim 5, characterized in that, The adjustment unit includes: A guiding member is provided with the same number of alignment slots as the number of carrier slots in the direction facing the wafer. Each alignment slot has a bottom wall, side walls located on the upper and lower sides of the bottom wall, and an opening opposite the bottom wall. The alignment slot forms a side opening on the left and right sides along the plane of the wafer. The width of the bottom wall in the direction perpendicular to the wafer plane is adapted to the thickness of the wafer fed into the carrier space. The width of the alignment slot in the direction perpendicular to the wafer plane gradually increases from the bottom wall to the opening. The second driving member, wherein the guiding member is movably connected to the second driving member along the wafer plane direction, and the guiding member, after being driven to move, can move into the carrier space along the wafer plane direction, and the side of the wafer located in the carrier space and confined in the carrier space can be guided to the bottom wall of the tank by the tank sidewall.

7. The vertical furnace system for splittable flakes according to claim 6, characterized in that, The guide member has a plurality of alignment channels, wherein the number of alignment channels is the same as the number of alignment slots, the alignment channels extend in the same direction as the movement direction of the cleaving member and pass through the bottom wall of the slot, and the size of the alignment channels matches the thickness of the cleaving member, wherein the cleaving member is movably disposed in the alignment channels.

8. The vertical furnace system for splittable flakes according to claim 5, characterized in that, The dicing assembly includes at least one dicing arm configured to move from the side opening of the wafer carrier unit into the carrier space in the direction of the wafer plane, and to hold two wafers diced from a single wafer at a predetermined distance in the carrier space.

9. The vertical furnace system with shardable fragments according to any one of claims 5-8, characterized in that, The shard assembly includes at least one pair of rotating units, the pair of rotating units being spaced apart from each other around the bearing space, wherein each rotating unit includes: With a rotating wheel; At least one third driving member, wherein the belt roller is movably disposed at the front opening of the wafer carrier unit, and the belt roller is synchronously rotatably connected to the third driving member about a normal direction perpendicular to the wafer plane direction, so that when the wafer transport assembly is held in the carrier space and the dicing unit is pressed against the wafer, the belt rollers in the two pairs of belt roller units can drive the wafer located in the carrier space to rotate about a normal direction perpendicular to the wafer plane direction.

10. The vertical furnace system for splittable flakes according to claim 9, characterized in that, Each of the rollers includes an inner body and an outer body. The outer body is hollow in the middle to form an installation space, and the inner body is disposed in the installation space. An elastic member is disposed between the inner wall of the outer body forming the installation space and the outer side of the inner body.

11. The vertical furnace system for splittable flakes according to claim 10, characterized in that, The elastic member is configured as a plurality of tension springs; or, the elastic member is configured as an elastic sleeve, wherein the shape of the inner body is implemented as a prism, and the cross-sectional shape of the mounting space is implemented as a polygon adapted to the cross-sectional shape of the inner body.

12. The vertical furnace system for splittable flakes according to claim 9, characterized in that, Each of the rollers includes an inner body and an outer body. The outer body is hollow in the middle to form an installation space, and the inner body is disposed in the installation space. The inner body is shaped as a prism, and the cross-sectional shape of the installation space is a polygon that matches the cross-sectional shape of the inner body. The inner body can slide up and down into the installation space. A limiting plate is provided on the upper and lower sides of the inner body to limit the range of vertical movement of the outer body. An elastic sleeve is provided between the limiting plate and the outer body.

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