High-precision RGB edge-emitting laser lamp group module
Through the combined structure of copper substrate, chip holder and T-type silicon prism, combined with the all-inorganic packaging process, the optical path pollution and thermal mismatch problems of traditional edge-emitting laser chip packaging are solved, and a high-precision laser module is realized, which is suitable for high-resolution displays and laser systems in complex environments.
Patent Information
- Application Number
- CN202511126049.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-12
- Publication Date
- 2025-10-03
AI Technical Summary
The light emission direction of traditional edge-emitting laser chips is located on the side of the chip. The TO shell and tube package makes it difficult to achieve a small-size and high-precision integrated structure, resulting in complex structure, low assembly efficiency, and easy to cause optical path pollution and thermal mismatch. It is difficult to adapt to high-precision displays and long-term use in harsh environments.
The combined structure of copper substrate, chip holder, T-type silicon prism and glass light window is adopted, combined with all-inorganic packaging technology to achieve structural integrated design and optical integration optimization. Through metal plating welding and positioning hole design, the optical path accuracy, structural stability and thermal management performance are improved.
It improves the efficiency of automated assembly, reduces manufacturing costs, enhances packaging reliability and adaptability, and is suitable for high-resolution displays and laser systems in complex environments.
Smart Images

Figure CN120749522A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of optoelectronic packaging, and in particular relates to a high-precision RGB edge-emitting laser lamp module. Background Art
[0002] Edge-emitting laser technology is widely used in many high-end fields such as laser processing, optical communications, scientific research, military, aerospace, etc. With the continuous advancement of edge-emitting laser chip technology, its output power, conversion efficiency and stability have been significantly improved, and market demand continues to grow. However, in order to meet the industry's demand for high-performance and high-reliability light sources, edge-emitting laser technology still needs to be optimized from multiple aspects.
[0003] Currently, the light emission direction of traditional edge-emitting laser chips is located on the side of the chip. TO shell and tube packaging makes it difficult to achieve a small-size, high-precision integrated structure. Not only is the structure complex and assembly efficiency low, but it is also prone to optical path pollution and thermal mismatch, leading to package damage. It is difficult to adapt to high-precision displays and long-term use in harsh environments. To solve the above problems, we provide a high-precision RGB edge-emitting laser light module. Summary of the Invention
[0004] The purpose of the present invention is to provide a high-precision RGB edge-emitting laser lamp module to solve the problem proposed in the above background technology that the light emission direction of the traditional edge-emitting laser chip is located on the side of the chip, and the TO tube shell package is difficult to achieve a small-size and high-precision integrated structure. Not only is the structure complex and the assembly efficiency low, but it is also easy to cause light path pollution and thermal mismatch, resulting in package damage, and it is difficult to adapt to high-precision displays and long-term use in harsh environments.
[0005] The above technical objectives of the present invention are achieved through the following technical solutions: a high-precision RGB edge-emitting laser light module, comprising a copper base plate, a chip holder fixedly connected to the top of the copper base plate, a plurality of T-stage silicon prisms fixedly connected to the top of the chip holder, an edge-emitting laser chip assembly fixedly connected to the top of the chip holder, a glass light window installed on the top of the copper base plate, and a metal-plated bottom coating on the bottom of the glass light window; The edge emitting laser chip assembly includes an edge emitting laser chip R, an edge emitting laser chip G, and an edge emitting laser chip B.
[0006] Preferably, the number of the T-stage silicon prisms is three, and the T-stage silicon prism comprises an adsorption plane and a reflection plane, and the surface of the reflection plane is provided with a coating.
[0007] Preferably, a Zener diode is fixedly connected to the top of the chip bracket, and a positioning hole is opened inside the copper substrate.
[0008] Preferably, the top of the copper substrate is fixedly connected to a substrate positive electrode, and the top of the copper substrate is fixedly connected to a substrate negative electrode.
[0009] Preferably, the glass light window is provided with a dam structure, the T-stage-shaped silicon prism is made of silicon material, and the glass light window is welded and mounted to the copper substrate through metal plating.
[0010] The present invention has the following beneficial effects: Through structural integrated design, optical integration optimization and all-inorganic packaging technology, the device effectively improves the optical path accuracy, structural stability, packaging reliability and thermal management performance of edge-emitting laser chip components, while significantly improving the efficiency of automated assembly and reducing manufacturing costs. It is particularly suitable for scenarios with high requirements for precision and reliability in high-resolution displays, complex environment lighting and laser systems. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Figure 1 It is a schematic three-dimensional diagram of the structure of the present invention; Figure 2 It is an exploded schematic diagram of the structure of the present invention; Figure 3 It is a three-dimensional diagram of the local structure of the present invention; Figure 4 It is a local structural stereogram of the present invention.
[0012] Figure numerals: 1. Copper substrate; 2. Chip holder; 3. T-stage silicon prism; 31. Adsorption plane; 32. Reflection surface; 4. Edge-emitting laser chip assembly; 5. Zener diode; 6. Glass window; 7. Metal coating; 8. Substrate positive electrode; 9. Substrate negative electrode; 10. Positioning hole. DETAILED DESCRIPTION
[0013] The present invention will be further described in detail below with reference to the accompanying drawings.
[0014] Example 1:
[0015] refer to Figure 1-4 A high-precision RGB edge-emitting laser light module includes a copper base plate 1, a chip holder 2 is fixedly connected to the top of the copper base plate 1, a plurality of T-stage silicon prisms 3 are fixedly connected to the top of the chip holder 2, an edge-emitting laser chip assembly 4 is fixedly connected to the top of the chip holder 2, a glass light window 6 is installed on the top of the copper base plate 1, and the bottom of the glass light window 6 is coated with a metal coating 7; The edge emitting laser chip assembly 4 includes an edge emitting laser chip R, an edge emitting laser chip G, and an edge emitting laser chip B.
[0016] Specifically, the T-stage silicon prism 3 is fixed to the chip holder 2 by insulating glue, and the edge-emitting laser chip assembly 4 corresponds to the three T-stage silicon prisms 3 respectively. When the circuit is connected, the chip is stimulated to emit light, and the Y-axis light path contacts the reflective surface 32 of the T-stage silicon prism 3, and is reflected as the Z-axis light path to realize the laser path. The present invention effectively improves the optical path accuracy, structural stability, packaging reliability and thermal management performance of the edge-emitting laser chip assembly 4 through structural integrated design, optical integration optimization and all-inorganic packaging technology, while significantly improving the efficiency of automated assembly and reducing manufacturing costs. It is particularly suitable for scenarios with high requirements on accuracy and reliability in high-resolution display, complex environment lighting and laser systems.
[0017] refer to Figure 3 There are three T-type silicon prisms 3. The T-type silicon prism 3 includes an adsorption plane 31 and a reflection surface 32. The adsorption plane 31 is used for automated equipment mounting to avoid contamination of the reflection surface 32. The surface of the reflection surface 32 is provided with a coating. The coating of the reflection surface 32 can efficiently reflect the light path of the corresponding band, reduce light path consumption, and avoid heating problems.
[0018] refer to Figure 2 A Zener diode 5 is fixedly connected to the top of the chip bracket 2. The Zener diode 5 is used to stabilize the voltage, prevent overcurrent breakdown, and protect the circuit. A positioning hole 10 is opened inside the copper substrate 1. The positioning hole 10 is provided to facilitate the installation of the device.
[0019] refer to Figure 1 The top of the copper substrate 1 is fixedly connected to a substrate positive electrode 8, and the top of the copper substrate 1 is fixedly connected to a substrate negative electrode 9.
[0020] refer to Figure 2 and Figure 4 The glass light window 6 is provided with a dam structure, and the T-type silicon prism 3 is made of silicon material. The thermal expansion coefficient of the T-type silicon prism 3 is similar to that of the copper substrate 1 and the glass light window 6. At the same time, it is fixed with insulating glue, which can effectively reduce the problem of device cracking caused by thermal differences and ensure the structural stability of the product. The glass light window 6 is welded and installed with the copper substrate 1 through the metal plating 7, and the package adopts the metal plating 7 eutectic welding process to improve air tightness and environmental compatibility, and is suitable for high temperature, high humidity, high vibration and other environments.
[0021] A brief description of the usage process: The coating on the reflective surface 32 can efficiently reflect the light path of the corresponding band, reduce light path consumption, and avoid heat problems. The glass window 6 is welded and installed to the copper substrate 1 through the metal coating 7. The package adopts the eutectic welding process of the metal coating 7 to improve airtightness and environmental compatibility. It is suitable for high temperature, high humidity, high vibration and other environments. The edge-emitting laser chip assembly 4 corresponds to three T-stage silicon prisms 3 respectively. When the circuit is connected, the chip is stimulated to emit light. The Y-axis light path contacts the reflective surface 32 of the T-stage silicon prism 3 and is reflected as the Z-axis light path to realize the laser path.
[0022] This specific embodiment is merely an explanation of the present invention and is not intended to limit the present invention. After reading this specification, those skilled in the art may make non-creative modifications to this embodiment as needed. However, as long as such modifications are within the scope of the claims of the present invention, they are protected by patent law.
Claims
1. A high-precision RGB edge-emitting laser light module, comprising a copper substrate (1), characterized in that: A chip bracket (2) is fixedly connected to the top of the copper substrate (1), a plurality of T-stage silicon prisms (3) are fixedly connected to the top of the chip bracket (2), an edge-emitting laser chip assembly (4) is fixedly connected to the top of the chip bracket (2), a glass light window (6) is installed on the top of the copper substrate (1), and the bottom of the glass light window (6) is coated with a metal coating (7); The edge-emitting laser chip assembly (4) comprises an edge-emitting laser chip R, an edge-emitting laser chip G and an edge-emitting laser chip B.
2. The high-precision RGB edge-emitting laser light module according to claim 1, characterized in that: The number of the T-stage-shaped silicon prisms (3) is three. The T-stage-shaped silicon prisms (3) comprise an adsorption plane (31) and a reflection plane (32), and the surface of the reflection plane (32) is provided with a coating.
3. The high-precision RGB edge-emitting laser light module according to claim 1, characterized in that: A Zener diode (5) is fixedly connected to the top of the chip bracket (2), and a positioning hole (10) is provided inside the copper substrate (1).
4. The high-precision RGB edge-emitting laser light module according to claim 1, characterized in that: The top of the copper substrate (1) is fixedly connected to a substrate positive electrode (8), and the top of the copper substrate (1) is fixedly connected to a substrate negative electrode (9).
5. The high-precision RGB edge-emitting laser light module according to claim 1, characterized in that: The glass light window (6) is provided with a dam structure, the T-stage-shaped silicon prism (3) is made of silicon material, and the glass light window (6) is eutectic-welded and mounted with the copper substrate (1) via a metal coating (7).