A high-power light source COC, CPO silicon light engine and coupling method

Abstract

This invention relates to a high-power light source COC. A first electrode pad is provided on the upper surface of a heat sink. The N-electrode of a DFB chip is attached to the first electrode pad. A second electrode pad is provided on the heat sink behind the DFB chip. The P-electrode of an MPD chip is attached to the second electrode pad. The MPD chip has a photosensitive surface and a first N-electrode sequentially along a direction away from the DFB chip. Multiple first gold wires arranged side-by-side on the P-electrode of the DFB chip cross the photosensitive surface and are bonded to the first N-electrode of the MPD chip. The backlight of the DFB chip is reflected onto the photosensitive surface of the MPD chip via the arc-shaped first gold wires. A CPO silicon photonics engine includes a high-power light source COC. The beneficial effect is that by using first gold wires to power the DFB chip to reflect the backlight of the DFB chip onto the photosensitive surface of the MPD chip, the MPD chip can monitor the optical power of the DFB chip, thus reducing costs.

Description

Technical Field

[0001] This invention relates to the field of optical engine technology, specifically to a high-power light source COC, CPO silicon photonics engine and coupling method. Background Technology

[0002] Traditional CPO silicon photonics engines employ an external high-power light source COC, especially for AI computing power applications, requiring 200mW / single channel or higher. In this type of high-power light source COC, the DFB chip's optical power is >300 mW, and an MPD chip is configured to monitor the DFB chip's optical power. Its specific structure includes: a first ceramic heat sink; a DFB chip mounted on the upper surface of the first ceramic heat sink; a special second ceramic heat sink located behind the DFB chip on the upper surface of the first ceramic heat sink; and an MPD chip vertically mounted on the side of the second ceramic heat sink adjacent to the DFB chip (referred to as the front side) to receive the backlight from the DFB chip. A corner pad is located between the upper surface of the second ceramic heat sink and the front side, rotating the MPD chip's electrodes 90° from the upper surface to the front side, facilitating gold wire bonding between the MPD chip and the area of ​​the corner pad on the front side. The specific structure is as follows: Figure 1 As shown, the disadvantages of this scheme are: the second ceramic heat sink is a special ceramic heat sink, which is expensive, and since the DFB chip has ultra-high optical power, it is required to coat the photosensitive surface of the MPD chip with an attenuation film to prevent the photocurrent of the MPD chip from saturating. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a high-power light source COC, CPO silicon photonics engine and coupling method to overcome the shortcomings of the prior art.

[0004] The technical solution of the present invention to solve the above-mentioned technical problems is as follows:

[0005] A high-power light source COC includes: a heat sink, a DFB chip, and an MPD chip. The heat sink has a first electrode pad on its upper surface. The DFB chip is attached to the first electrode pad with its N electrode facing down. The heat sink has a second electrode pad behind the DFB chip on its upper surface. The MPD chip is attached to the second electrode pad with its P electrode facing down. The upper surface of the MPD chip has a photosensitive surface and a first N electrode in sequence along the direction away from the DFB chip. Multiple first gold wires distributed side by side on the P electrode of the upper surface of the DFB chip cross the photosensitive surface and are wired to the first N electrode of the MPD chip. The backlight of the DFB chip is reflected onto the photosensitive surface of the MPD chip by the arc-shaped first gold wires.

[0006] The beneficial effects of this invention are: eliminating the need for a special heat sink, instead attaching the MPD chip to the second electrode pad on the heat sink, and then using a first gold wire to power the DFB chip to reflect the backlight of the DFB chip onto the photosensitive surface of the MPD chip, thereby allowing the MPD chip to monitor the optical power of the DFB chip, effectively reducing costs. The photocurrent of the MPD chip can be flexibly changed by reducing the number of first gold wires and adjusting the arc shape of the first gold wires, thus eliminating the need for an attenuation film on the photosensitive surface of the MPD chip, further reducing costs.

[0007] Based on the above technical solution, the present invention can be further improved as follows.

[0008] Furthermore, the diameter of the first gold wire is 20μm to 30μm.

[0009] Furthermore, the diameter of the first gold wire is 25 μm.

[0010] Furthermore, the center-to-center distance between two adjacent first gold wires is 100μm to 200μm.

[0011] Furthermore, the number of the first gold thread is 3 to 10.

[0012] The beneficial effect of adopting the above-mentioned steps is that it can ensure that the backlight reflection of the DFB chip is on the photosensitive surface of the MPD chip.

[0013] Furthermore, a third electrode pad is provided on the heat sink behind the MPD chip, and a second gold wire is bonded to the third electrode pad on the first N electrode of the MPD chip.

[0014] The further beneficial effect of adopting the above is that it facilitates the connection of the corresponding power supply electrodes on the external PCB board, thereby supplying power to the MPD chip and the DFB chip.

[0015] Furthermore, the rear ends of the first electrode pad, the second electrode pad, and the third electrode pad are flush.

[0016] Furthermore, the MPD chip is tilted at an angle of 11° to 13° relative to the DFB chip.

[0017] The further beneficial effect of adopting the above is that the backlight of the DFB chip does not return to the origin after being reflected from the side of the MPD chip, thus reducing the impact of reflected light on the DFB chip.

[0018] Based on the above technical solution, the present invention also provides a CPO silicon photonics engine, comprising: the above-mentioned high-power light source COC.

[0019] The further beneficial effect of adopting the above is that using a low-cost, high-power light source COC can effectively reduce the cost of CPO silicon photonics engine.

[0020] Based on the above technical solution, the present invention also provides a coupling method for a high-power light source COC, for coupling a high-power light source COC as described above, comprising the following steps:

[0021] S10. Place the DFB chip onto the first electrode pad with the N electrode facing down.

[0022] S20. Place the MPD chip onto the second electrode pad with the P electrode facing down.

[0023] S30. Solder one end of multiple first gold wires to the P electrode on the upper surface of the DFB chip, and then let the other end cross the photosensitive surface and be wired to the first N electrode of the MPD chip. Adjust the arc shape of the first gold wires so that the backlight of the DFB chip is reflected onto the photosensitive surface of the MPD chip through the first gold wires. Attached Figure Description

[0024] Figure 1 This is a structural diagram of COC, a high-power light source in the prior art;

[0025] Figure 2 This is a top view of the high-power light source COC in this invention;

[0026] Figure 3 This is a front view of the high-power light source COC in this invention;

[0027] Figure 4 This is a schematic diagram showing the state in which the backlight of the DFB chip in this invention no longer returns to its origin after being reflected from the side of the MPD chip.

[0028] The attached diagram lists the components represented by each number as follows:

[0029] 1. Heat sink, 2. DFB chip, 3. MPD chip, 310. Photosensitive surface, 320. First N electrode, 4. First electrode pad, 5. Second electrode pad, 6. First gold wire, 7. Third electrode pad, 8. Second gold wire. Detailed Implementation

[0030] The principles and features of the present invention are described below with reference to the accompanying drawings. The examples given are only for explaining the present invention and are not intended to limit the scope of the present invention.

[0031] Example 1

[0032] like Figure 2 , Figure 3As shown, a high-power light source COC includes: a heat sink 1, a DFB chip 2, and an MPD chip 3. The upper surface of the heat sink 1 is provided with a first electrode pad 4. The DFB chip 2 is attached to the first electrode pad 4 with the N electrode facing down. The upper surface of the heat sink 1 is provided with a second electrode pad 5 behind the DFB chip 2. The P electrode of the lower surface of the MPD chip 3 is attached to the second electrode pad 5. The upper surface of the MPD chip 3 has a photosensitive surface 310 and a first N electrode 320 in sequence along the direction away from the DFB chip 2. That is, the photosensitive surface 310 is located between the first N electrode 320 and the P electrode of the DFB chip 2. Multiple first gold wires 6 are arranged side by side on the P electrode of the upper surface of the DFB chip 2. After crossing the photosensitive surface 310, they are wired to the first N electrode 320 of the MPD chip 3. The backlight of the DFB chip 2 can be reflected onto the photosensitive surface 310 of the MPD chip 3 through the arc-shaped first gold wires 6.

[0033] Instead of using a special heat sink, the MPD chip 3 is attached to the second electrode pad 5 on the heat sink 1. Then, the backlight of the DFB chip 2 is reflected onto the photosensitive surface 310 of the MPD chip 3 using the first gold wire 6, which is used to power the DFB chip 2. This allows the MPD chip 3 to monitor the optical power of the DFB chip 2, effectively reducing costs. Furthermore, the photocurrent of the MPD chip 3 can be flexibly changed by reducing the number of first gold wires 6 and adjusting the arc shape of the first gold wires 6, thus eliminating the need for an attenuation film on the photosensitive surface 310 of the MPD chip 3, further reducing costs.

[0034] Example 2

[0035] like Figure 2 , Figure 3 As shown, this embodiment is a further improvement on embodiment 1, as detailed below:

[0036] The diameter of the first gold wire 6 is 20μm to 30μm, and more preferably 25μm.

[0037] The center-to-center distance between two adjacent first gold wires 6 is preferably 100μm to 200μm, and the number of first gold wires 6 is preferably 3 to 10. In actual selection, it can be 3, 4, 5, 6, 7, 8, 9, or 10, and the specific data is determined according to the actual coupling conditions.

[0038] Example 3

[0039] like Figure 2 As shown, this embodiment is a further improvement on embodiment 1 or 2, as detailed below:

[0040] A third electrode pad 7 is provided on the heat sink 1 behind the MPD chip 3. A second gold wire 8 is connected to the third electrode pad 7 on the first N electrode 320 of the MPD chip 3. The first electrode pad 4, the second electrode pad 5 and the third electrode pad 7 are respectively connected to the corresponding power supply electrodes on the PCB board. The first gold wire 6 can supply power to the DFB chip 2.

[0041] Example 4

[0042] like Figure 2 As shown, this embodiment is a further improvement on embodiment 3, as detailed below:

[0043] The rear ends of the first electrode pad 4, the second electrode pad 5, and the third electrode pad 7 are flush. The first electrode pad 4 is L-shaped, the second electrode pad 5 is also L-shaped, and the third electrode pad 7 is rectangular. The second electrode pad 5 is located inside the L end of the first electrode pad 4, and the third electrode pad 7 is located between the L end of the first electrode pad 4 and the L end of the second electrode pad 5. The first electrode pad 4, the second electrode pad 5, and the third electrode pad 7 are preferably gold-plated pads.

[0044] Example 5

[0045] like Figure 4 As shown, this embodiment is a further improvement on any one of embodiments 1 to 4, as detailed below:

[0046] The MPD chip 3 is tilted at an angle of 11° to 13° relative to the DFB chip 2, so that the backlight of the DFB chip 2 does not return to the origin after being reflected from the side of the MPD chip 3, thus reducing the impact of reflected light on the DFB chip 2.

[0047] Example 6

[0048] A CPO silicon photonics engine includes: a high-power light source COC as described in any of Examples 1 to 5.

[0049] Example 7

[0050] A coupling method for a high-power light source COC, used to couple a high-power light source COC as described in any of Examples 1 to 5, includes the following steps:

[0051] S10. Place the DFB chip 2 onto the first electrode pad 4 with the N electrode facing down.

[0052] S20. Place the MPD chip 3 onto the second electrode pad 5 with the P electrode facing down.

[0053] S30. Solder one end of multiple first gold wires 6 to the P electrode 210 on the upper surface of the DFB chip 2, and then let the other end cross the photosensitive surface 310 and be wired to the first N electrode 320 of the MPD chip 3. Adjust the arc shape of the first gold wires 6 so that the backlight of the DFB chip 2 is reflected by the first gold wires 6 onto the photosensitive surface 310 of the MPD chip 3.

[0054] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A high-power light source COC, characterized in that, include: The heat sink (1), DFB chip (2), and MPD chip (3) are provided. The heat sink (1) has a first electrode pad (4) on its upper surface. The DFB chip (2) is attached to the first electrode pad (4) with the N electrode facing down. The heat sink (1) has a second electrode pad (5) behind the DFB chip (2) on its upper surface. The MPD chip (3) is attached to the second electrode pad (5) with the P electrode facing down. The MPD chip (3) has a photosensitive surface (310) and a first N electrode (320) on its upper surface in a direction away from the DFB chip (2). Multiple first gold wires (6) are arranged side by side on the P electrode of the upper surface of the DFB chip (2) and are wired to the first N electrode (320) of the MPD chip (3) after crossing the photosensitive surface (310). The backlight of the DFB chip (2) is reflected onto the photosensitive surface (310) of the MPD chip (3) by the arc-shaped first gold wires (6).

2. The high-power light source COC according to claim 1, characterized in that, The diameter of the first gold wire (6) is 20μm to 30μm.

3. The high-power light source COC according to claim 2, characterized in that, The diameter of the first gold wire (6) is 25 μm.

4. A high-power light source COC according to claim 2 or 3, characterized in that, The center-to-center distance between two adjacent first gold wires (6) is 100μm to 200μm.

5. A high-power light source COC according to claim 4, characterized in that, The number of the first gold wire (6) is 3 to 10.

6. The high-power light source COC according to claim 1, characterized in that, The heat sink (1) has a third electrode pad (7) behind the MPD chip (3), and a second gold wire (8) is wired to the third electrode pad (7) on the first N electrode (320) of the MPD chip (3).

7. A high-power light source COC according to claim 6, characterized in that, The rear ends of the first electrode pad (4), the second electrode pad (5), and the third electrode pad (7) are flush.

8. A high-power light source COC according to claim 1, characterized in that, The MPD chip (3) is tilted at an angle of 11° to 13° relative to the DFB chip (2).

9. A CPO silicon photonics engine, characterized in that, include: The high-power light source COC as described in any one of claims 1 to 8.

10. A coupling method for a high-power light source COC, characterized in that, The method for coupling a high-power light source COC as described in any one of claims 1 to 8 includes the following steps: S10. Place the DFB chip (2) onto the first electrode pad (4) with the N electrode facing down. S20. Place the MPD chip (3) onto the second electrode pad (5) with the P electrode facing down. S30. Solder one end of multiple first gold wires (6) to the P electrode on the upper surface of the DFB chip (2), and then let the other end cross the photosensitive surface (310) and be wired to the first N electrode (320) of the MPD chip (3). Adjust the arc shape of the first gold wires (6) so that the backlight of the DFB chip (2) is reflected by the first gold wires (6) onto the photosensitive surface (310) of the MPD chip (3).

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