Photoresist thinning method and device and storage medium

Abstract

The embodiment of the invention provides a photoresist thinning method and equipment and a storage medium. The method comprises the following steps: transferring a wafer to be processed from a loading position to a reaction mechanism through a loading and unloading module; controlling the generation mechanism to convey the plasma to the reaction mechanism; controlling a vacuumizing device to perform vacuumizing treatment on the reaction mechanism so as to obtain a target wafer after the plasma uniformly etches the first photoresist on the surface of the to-be-treated wafer; and the target wafer is transferred to a discharging position from the reaction mechanism through the feeding and discharging module. The generation mechanism uniformly conveys the generated plasma to the reaction mechanism, and synchronously controls the vacuumizing device to vacuumize the reaction mechanism, so that the plasma uniformly etches the first photoresist on the surface of the to-be-processed wafer, the photoresist thinning of the wafer can be completed according to requirements, the thinning efficiency is high, and the cost is low.

Description

Technical Field

[0001] The present invention relates to the field of, but is not limited to, semiconductor processing technology, and in particular to a photoresist thinning method, device, and storage medium. Background Art

[0002] Photoresist is a thin film material whose solubility changes after exposure to ultraviolet light, electron beams, ion beams, X-rays, or other radiation. When processing the surface of a semiconductor material, using an appropriate, selective photoresist can create the desired image on the surface.

[0003] Currently, dry stripping is commonly used to remove photoresist from wafers or integrated circuit chips. However, dry stripping can only completely remove the photoresist or remove it unevenly. Therefore, when uniform thinning of the photoresist is required for circuit fabrication, existing technologies are unable to meet the requirements. Summary of the Invention

[0004] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0005] The main purpose of the embodiments of the present invention is to provide a photoresist thinning method, device and storage medium, which can uniformly thin the photoresist.

[0006] In a first aspect, an embodiment of the present invention provides a photoresist thinning method, which is applied to a photoresist thinning device, wherein the photoresist thinning device includes a loading and unloading module and an etching module, wherein the etching module includes at least one etching unit, wherein the etching unit includes a photoresist etching device and a vacuum device, wherein the photoresist etching device includes a generating mechanism and a reaction mechanism, and wherein the photoresist thinning method includes: Transferring the wafer to be processed from the loading position to the reaction mechanism through the loading and unloading module; controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism so that the plasma is uniformly distributed within the reaction mechanism; Controlling the vacuum pumping device to perform vacuum treatment on the reaction mechanism so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed to obtain a target wafer, wherein the flatness of the second photoresist on the surface of the target wafer is greater than a preset flatness, and the second photoresist is obtained by etching the first photoresist; The target wafer is transferred from the reaction mechanism to a loading and unloading position by the loading and unloading module.

[0007] In some optional embodiments, the generating mechanism includes an ionizer, an accelerator, and a diffusion disk; and controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism includes: generating plasma with uniform concentration through the ionizer and delivering the plasma to the accelerator; The plasma is accelerated to a preset speed by the accelerator and then transported to the diffusion disk; The plasma is uniformly diffused to the reaction mechanism through the diffusion disk.

[0008] In some optional embodiments, the step of uniformly diffusing the plasma to the reaction mechanism through the diffusion disk includes: obtaining a diffusion resistance map of the diffusion disk, wherein the diffusion resistance map indicates the molecular diffusion resistance of each area on the diffusion disk; obtaining the ion type of the plasma and the ion velocity when reaching the diffusion disk; determining a first aperture of a central region on the diffusion disk according to the ion type and a first preset relationship table, wherein the first aperture represents a diameter of a first diffusion hole in the central region, the central region matches an ion output port of the accelerator, and the first preset relationship table indicates a relationship between the ion type and the first aperture; determining a first density in the central area of ​​the diffusion disk according to the ion velocity and a second preset relationship table, wherein the first density represents a setting density of the first diffusion holes; setting a second pore size and a second density of second diffusion holes according to the diffusion resistance map, the first density, and the first pore size, wherein the second diffusion holes are arranged around the central area, and the second density represents the arrangement density of the second diffusion holes; The plasma is uniformly diffused to the reaction mechanism through the first diffusion hole and the second diffusion hole.

[0009] In some optional embodiments, setting the second pore size and the second density of the second diffusion hole according to the diffusion resistance map, the first density, and the first pore size includes: Acquire a second concentric circle of the second diffusion hole; Acquire a first concentric circle of the first diffusion hole, where the first concentric circle and the second concentric circle share a common center; Obtaining a diameter difference between the second concentric circle and the first concentric circle; setting the second aperture according to the diameter difference and the first aperture; determining an ion diffusion coefficient based on the diffusion resistance map, the first pore size, and the first density; The second density is determined according to the ion diffusion coefficient, the diffusion resistance map, and the diameter difference.

[0010] In some optional embodiments, the reaction mechanism comprises a reaction chamber and a reaction table, an adsorption plate, and a first lifting device arranged in the reaction chamber, wherein the adsorption plate is fixedly arranged on the first lifting device, the reaction table is fixedly arranged on the adsorption plate, a plurality of adsorption through holes are evenly arranged in an area of ​​the adsorption plate located outside the reaction table, the vacuum pumping device comprises a plurality of vacuum pumping pipes, and the vacuum pumping pipes are connected to the reaction chamber; and the method of controlling the vacuum pumping device to perform a vacuum treatment on the reaction mechanism so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed to obtain a target wafer comprises: Obtaining an etching depth and an etching time of the wafer to be processed, wherein the etching depth represents a difference in depth between the first photoresist and the second photoresist, and the etching time represents a time for etching the first photoresist by plasma; Acquiring an ion density map of the wafer to be processed, wherein the ion density map indicates plasma density and plasma energy of various regions on the surface of the first photoresist; The extraction power of the plurality of vacuum pipes and the lifting height of the first lifting device are controlled according to the ion density map, the etching depth and the etching time, so that after the plurality of vacuum pipes are vacuumed through the adsorption through holes, the plasma uniformly etches the first photoresist to obtain the target wafer.

[0011] In some optional embodiments, the loading and unloading module includes a first loading and unloading mechanism and a second loading and unloading mechanism, the second loading and unloading mechanism includes a wafer placement unit, a wafer cooling unit and a wafer pick-and-place unit, the wafer cooling unit includes a cooling table, a cooling pipe and a cooling machine; the target wafer is transferred from the reaction mechanism to the unloading position by the loading and unloading module, including: Controlling the wafer handling unit to transfer the target wafer from the reaction mechanism to the cooling stage; Obtaining a preset cooling time and a target temperature of the target wafer, wherein the target temperature represents a first temperature of the target wafer before cooling begins and a second temperature of the target wafer after cooling ends; controlling the cooling power of the cooler according to the preset cooling time and the target temperature, so that the cooler cools the target wafer on the cooling table through the cooling pipe; The first loading and unloading mechanism is controlled to transfer the target wafer that has been cooled from the cooling table to the unloading position.

[0012] In some optional embodiments, the wafer loading and placing unit includes a rotating chassis, a second lifting device, a first loading and unloading assembly and a second loading and unloading assembly, the rotating chassis is fixedly arranged on the second lifting device, the first loading and unloading assembly and the second loading and unloading assembly are arranged opposite to each other and are both rotatably connected to the rotating chassis, the first loading and unloading assembly includes a first rotating arm, a second rotating arm and a third rotating arm, the first end of the first rotating arm is rotatably connected to the first area of ​​the rotating chassis, the second end of the first rotating arm is rotatably connected to the first end of the second rotating arm, the second end of the second rotating arm is rotatably connected to the first end of the third rotating arm, and the second end of the third rotating arm is fixedly connected to the first transfer member, the second loading and unloading assembly includes a fourth rotating arm, a fifth rotating arm and a sixth rotating arm, the first end of the fourth rotating arm is rotatably connected to the second area of ​​the rotating chassis, the second end of the fourth rotating arm is rotatably connected to the first end of the fifth rotating arm, the second end of the fifth rotating arm is rotatably connected to the first end of the sixth rotating arm, and the second end of the third rotating arm is fixedly connected to the second transfer member; controlling the wafer loading and placing unit to transfer the target wafer from the reaction mechanism to the cooling table includes: Acquiring first position information of the target wafer; Acquiring second position information of the first transfer member and / or the second transfer member; generating, based on the first position information, the second position information, and the cooling position information of the cooling stage, a first rotation timing diagram in which the first end of the first rotating arm rotates relative to the first area of ​​the rotating chassis, a second rotation timing diagram in which the first end of the second rotating arm rotates relative to the second end of the first rotating arm, and a third rotation timing diagram in which the first end of the third rotating arm rotates relative to the second end of the second rotating arm; and / or generating, based on the first position information, the second position information, and the cooling position information of the cooling stage, a fourth rotation timing diagram in which the first end of the fourth rotating arm rotates relative to the second area of ​​the rotating chassis, a fifth rotation timing diagram in which the first end of the fifth rotating arm rotates relative to the second end of the fourth rotating arm, and a sixth rotation timing diagram in which the first end of the sixth rotating arm rotates relative to the second end of the fifth rotating arm; Controlling the first end of the first rotating arm to rotate relative to the first area of ​​the rotating chassis according to the first rotation timing map, controlling the first end of the second rotating arm to rotate relative to the second end of the first rotating arm according to the second rotation timing map, and controlling the first end of the third rotating arm to rotate relative to the second end of the second rotating arm according to the third rotation timing map, so that the first transfer member transfers the target wafer to the cooling table; and / or According to the fourth rotation time sequence map, the first end of the fourth rotating arm is controlled to rotate relative to the second region of the rotating base, according to the fifth rotation time sequence map, the first end of the fifth rotating arm is controlled to rotate relative to the second end of the fourth rotating arm, and according to the sixth rotation time sequence map, the first end of the sixth rotating arm is controlled to rotate relative to the second end of the fifth rotating arm, so that the second transferring member transfers the target wafer to the cooling table.

[0013] In some optional embodiments, the transferring the wafer to be processed from the wafer loading position to the reaction mechanism by the wafer loading and unloading module comprises: controlling the first wafer loading and unloading mechanism to transfer the wafer to be processed from the wafer loading position to the wafer placing unit; obtaining an inscribed circle between all the photoresist etching devices and the wafer placing unit; in a case where the first transferring member and the second transferring member transfer the wafer to be processed out of the wafer placing unit, controlling the first transferring member and the second transferring member to be located in a target region covered by the inscribed circle; controlling the first end of the first rotating arm to rotate relative to the first region of the rotating base and controlling the first end of the fourth rotating arm to rotate relative to the second region of the rotating base, so that the first transferring member and the second transferring member transfer the wafer to be processed to the reaction mechanism after rotating in the target region.

[0014] In a second aspect, an embodiment of the present application provides a photoresist thinning device, which comprises a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor implements the photoresist thinning method of the first aspect when executing the computer program.

[0015] In a third aspect, a computer storage medium stores computer executable instructions, and the computer executable instructions are used to execute the photoresist thinning method of the first aspect.

[0016] The beneficial effects of the present application include: when performing photoresist thinning, the wafer to be processed is moved from the feeding position to the reaction mechanism by the feeding and discharging module; the generated plasma is uniformly delivered to the reaction mechanism by the generating mechanism, so that the plasma is uniformly distributed in the reaction mechanism; the reaction mechanism is vacuumized by the vacuumizing device, so that the target wafer is obtained after the first photoresist on the surface of the wafer to be processed is uniformly etched by the plasma, the flatness of the second photoresist on the surface of the target wafer is greater than the preset flatness, and the second photoresist is obtained by etching the first photoresist; and the target wafer is moved from the reaction mechanism to the discharging position by the feeding and discharging module. In the technical scheme of the embodiment, the generated plasma is uniformly delivered to the reaction mechanism by the generating mechanism, and the vacuumizing device is controlled to vacuumize the reaction mechanism synchronously, so that the first photoresist on the surface of the wafer to be processed is uniformly etched by the plasma, the photoresist thinning of the wafer can be completed according to the requirement, and the thinning efficiency is high and the cost is low.

[0017] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent from the description, or can be learned by practice of the present application. The objects and other advantages of the present application will be realized and attained by means of the instrumentalities particularly pointed out in the description and claims. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a schematic diagram of a system platform architecture for performing a photoresist thinning method provided by an embodiment of the present application; Figure 2 is a flowchart of a photoresist thinning method provided by an embodiment of the present application; Figure 3 is a structural schematic diagram of a photoresist thinning device provided by an embodiment of the present application; Figure 4 is a structural schematic diagram of a second feeding and discharging mechanism provided by an embodiment of the present application; Figure 5 is a structural schematic diagram of a first feeding and discharging mechanism provided by an embodiment of the present application; Figure 6 is a sectional schematic diagram of an etching unit provided by an embodiment of the present application; Figure 7 is a structural schematic diagram of a diffusion disc provided by an embodiment of the present application; Figure 8 is a sectional schematic diagram of an adsorption disc provided by an embodiment of the present application.

[0019] Reference signs: System platform architecture 1000, processor 1100, memory 1200; First loading and unloading mechanism 100, loading position 110, unloading position 120, loading and unloading robot arm 130; Second loading and unloading mechanism 200, cooling stage 210, cooling pipe 211, cooler 212, wafer placement unit 220, second lifting device 230, rotating chassis 231, first rotating arm 240, second rotating arm 241, third rotating arm 242, first transfer member 243, fourth rotating arm 250, fifth rotating arm 251, sixth rotating arm 252, second transfer member 253; Etching unit 300 , ionizer 310 , accelerator 320 , ion output port 321 , diffusion plate 330 , first diffusion hole 331 , second diffusion hole 332 , reaction table 340 , adsorption plate 350 , adsorption through hole 351 , vacuum pipe 360 ​​, first lifting device 370 . DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0021] It should be noted that although the device schematics illustrate functional module divisions and the flowcharts illustrate logical sequences, in certain circumstances, the steps shown or described may be performed in a sequence that differs from the module divisions in the device or the sequence in the flowcharts. The terms "first," "second," and the like in the specification, claims, or accompanying drawings are used to distinguish similar items and are not necessarily used to describe a specific sequence or precedence.

[0022] The embodiments of the present invention are further described below with reference to the accompanying drawings.

[0023] like Figure 1 As shown, Figure 1 Schematic diagram of a system platform architecture for performing a photoresist thinning method provided by one embodiment of the present invention.

[0024] exist Figure 1 In the example of FIG, the system platform architecture 1000 is provided with a processor 1100 and a memory 1200, wherein the processor 1100 and the memory 1200 can be connected via a bus or other means. Figure 1 The bus connection is taken as an example.

[0025] The memory 1200 is a non-transient computer-readable storage medium that can be used to store non-transient software programs and non-transient computer executable programs. In addition, the memory 1200 may include a high-speed random access memory and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage device. In some embodiments, the memory 1200 may optionally include a memory remotely arranged relative to the processor 1100, and these remote memories may be connected to the photoresist thinning device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0026] Those skilled in the art will appreciate that the system platform architecture 1000 can be applied to 5G communication network systems and subsequently evolved mobile communication network systems, and this embodiment does not specifically limit this.

[0027] It will be understood by those skilled in the art that Figure 1 The system platform architecture 1000 shown in the figure does not constitute a limitation on the embodiments of the present invention, and may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently.

[0028] Reference Figure 2 , Figure 2 A flow chart of a photoresist thinning method provided by an embodiment of the present invention, using Figure 3-8 The photoresist thinning equipment shown in the figure includes a loading and unloading module and an etching module. The etching module includes at least one etching unit 300. The etching unit 300 includes a photoresist etching device and a vacuum pumping device. The photoresist etching device includes a generating mechanism and a reaction mechanism. The photoresist thinning method of an embodiment of the present invention may include but is not limited to step S100, step S200, step S300, and step S400.

[0029] Step S100, transferring the wafer to be processed from the loading position 110 to the reaction mechanism through the loading and unloading module; Step S200, controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism so that the plasma is uniformly distributed in the reaction mechanism; Step S300, controlling the vacuum pumping device to perform vacuum treatment on the reaction mechanism, so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed to obtain a target wafer, wherein the flatness of the second photoresist on the surface of the target wafer is greater than a preset flatness, and the second photoresist is obtained by etching the first photoresist; Step S400 : The target wafer is transferred from the reaction mechanism to the unloading position 120 by the unloading module.

[0030] Specifically, the etching module of the present application includes at least one etching unit 300 (multiple units can be set according to production capacity requirements to achieve synchronous processing, and the specific number of settings is not limited here). Each etching unit 300 is composed of a photoresist etching device and a vacuum pumping device; and the photoresist etching device is further divided into a generating mechanism and a reaction mechanism. The generating mechanism is responsible for the generation of plasma, and the reaction mechanism is used to place the wafer to be processed and etch and thin the photoresist on the wafer surface through plasma.

[0031] The wafer to be processed (with the first photoresist coated on the surface that needs to be thinned) is initially placed at the loading position 110. The loading and unloading module grabs the wafer through a robotic arm (equipped with a vacuum suction cup or pneumatic gripper). During the transfer of the robotic arm, the positioning notch or mark on the edge of the wafer is identified through a visual positioning system (such as an industrial camera), and the posture of the wafer is calibrated (to ensure that it is concentric with the carrier of the reaction mechanism). Then, the wafer is accurately placed on the working surface of the reaction mechanism (a high-temperature and corrosion-resistant ceramic or metal carrier) to complete the loading.

[0032] The generation mechanism ionizes the reaction gas (such as oxygen or carbon tetrafluoride, selected based on the photoresist type and not limited here) into plasma using energy devices such as radio frequency power supplies and microwave generators. During the generation process, a symmetrical electrode design and uniform air inlet structure ensure uniform initial plasma density. The generated plasma is transported to the reaction mechanism via a transmission channel (such as a pipe with a diffusion structure). During the transmission process, the diffusion disk 330 has a gradient hole distribution (sparse in the center, dense at the edges), a symmetrical flow field design (maintaining laminar flow), and magnetic field-assisted confinement (reducing particle diffusion losses). After entering the reaction mechanism, the plasma is evenly distributed within the cavity cross-section, ensuring uniform etching of the photoresist.

[0033] During etching, the vacuum pump is started synchronously or in advance to extract the gas inside the cavity through multiple evenly distributed exhaust holes (arranged in a triangle or matrix, the specific arrangement is not limited) at the bottom or side wall of the reaction mechanism, and the pressure inside the reaction mechanism is controlled within a preset range. The stable pressure environment can avoid the plasma from generating a density gradient due to local pressure fluctuations, and at the same time accelerate the discharge of etching by-products (such as carbon oxides and fluorides) to prevent them from accumulating on the surface of the photoresist and affecting the reaction uniformity.

[0034] In the stable pressure field maintained by the vacuum pump, the plasma (active particles) within the reaction mechanism chemically reacts or physically bombards the first photoresist on the surface of the wafer being processed, thinning the photoresist. Because the plasma is evenly distributed and the vacuum pump utilizes zoned exhaust, varying the exhaust power further compensates for etching variations, ensuring uniform etching of the first photoresist before producing a thinned second photoresist. The resulting second photoresist has a flatness greater than the preset level, providing excellent flatness and facilitating subsequent circuit fabrication.

[0035] The vacuum pump, comprised of a multi-stage vacuum pump, continuously evacuates the photoresist etching apparatus, maintaining a high vacuum environment within the apparatus. This improves the efficiency and quality of resist removal. The vacuum pump also ensures uniform etching of the photoresist by the plasma, ensuring uniform etching and effective thinning. The vacuum pump is also equipped with a high-precision vacuum sensor that monitors the vacuum level within the apparatus in real time and automatically adjusts the vacuum pump's operating status based on process requirements, ensuring the vacuum level remains stable within the set range.

[0036] In some optional embodiments, the step of transferring the wafer to be processed from the loading position 110 to the reaction mechanism by the loading and unloading module includes: S110, controlling the first loading and unloading mechanism 100 to transfer the wafer to be processed from the loading position 110 to the wafer placement unit 220; S120, obtaining the inscribed circles between all the photoresist etching devices and the wafer placement units 220; S130, when the first transfer member 243 and the second transfer member 253 move the wafer to be processed out of the wafer placement unit 220, controlling the first transfer member 243 and the second transfer member 253 to be located in the target area covered by the inscribed circle; S140, control the first end of the first rotating arm 240 to rotate relative to the first area of ​​the rotating chassis 231, and control the first end of the fourth rotating arm 250 to rotate relative to the second area of ​​the rotating chassis 231, so that the first transfer member 243 and the second transfer member 253 rotate within the target area and transfer the wafer to be processed to the reaction mechanism.

[0037] Specifically, refer to Figure 4 and Figure 5During loading, the first loading and unloading mechanism 100 is controlled to complete the initial transfer. The first loading and unloading mechanism 100 (via the loading and unloading robot 130) grabs the wafer to be processed from the initial loading position 110 and transfers it to the wafer placement unit 220 (equipped with positioning grooves or vacuum suction to ensure stable wafer placement). The inscribed circle between all photoresist etching devices and the wafer placement unit 220 is obtained. This "inscribed circle" refers to the largest circular area calculated based on the positional distribution of all photoresist etching devices (multiple etching units 300, the specific number is not limited) in the equipment layout, with the wafer placement unit 220 as the reference. This circle is completely contained within the gap between the wafer placement unit 220 and each photoresist etching device and does not overlap with any etching device. This function defines a "safe range" for the first and second transfer members 243 and 253, ensuring that they do not collide with the etching devices during transfer. During the calculation, the center and radius of the inscribed circle are determined by geometric modeling in combination with parameters such as the dimensions of each etching device and the distance from the wafer placement unit 220 .

[0038] During the process of removing the wafers to be processed from the wafer placement unit 220, the initial positions of the first and second transfer members 243 and 253 are strictly controlled. When the first and second loading and unloading assemblies of the wafer placement unit are activated, and the first transfer member 243 (at the end of the third rotating arm 242) and the second transfer member 253 (at the end of the sixth rotating arm 252) approach the wafer placement unit 220 and grasp the wafer, the system monitors their coordinates in real time via position sensors on the rotating arms to ensure that they are completely within the "target area" covered by the inscribed circle. In other words, no part of the first and second transfer members 243 and 253 exceeds the boundaries of the inscribed circle.

[0039] Final transfer is achieved through the coordinated rotation of the rotating arms. The first rotating arm 240 of the first loading and unloading assembly (its first end connected to the first area of ​​the rotating chassis 231) and the fourth rotating arm 250 of the second loading and unloading assembly (its first end connected to the second area of ​​the rotating chassis 231) are controlled to rotate separately: the first rotating arm 240 drives the first transfer member 243, and the fourth rotating arm 250 drives the second transfer member 253, synchronously adjusting their angles within the target area (for example, the first rotating arm 240 rotates 45 degrees clockwise, and the fourth rotating arm 250 rotates 45 degrees counterclockwise). Through multi-joint linkage (the first rotating arm 240 to the third rotating arm 242, and the fourth rotating arm 250 to the sixth rotating arm 252 coordinate extension or contraction), the two transfer members smoothly transfer the wafer to be processed from the wafer placement unit 220 to the work surface of the target reaction mechanism (such as the reaction mechanism's carrier, which maintains a preset distance from the wafer placement unit 220 and is located on the extension path of the inscribed circle), without exceeding the range of the inscribed circle. Throughout the rotation process, the system verifies the position coordinates of the transfer element in real time to ensure that it remains within the target area. Ultimately, the wafer to be processed is precisely placed at the designated location within the reaction mechanism, completing loading. The same transfer method can be used to transfer the target wafer to the cooling stage 210 during unloading, which will not be detailed here.

[0040] In some optional embodiments, the generating mechanism includes an ionizer 310, an accelerator 320, and a diffusion disk 330; and controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism includes: S210, generating plasma with uniform concentration through the ionizer 310, and transporting the plasma to the accelerator 320; S220, accelerating the plasma to a preset speed through the accelerator 320 and then transporting it to the diffusion plate 330; S230 , uniformly diffusing the plasma to the reaction mechanism through the diffusion disk 330 .

[0041] Specifically, refer to Figure 6 Specific reactive gases (such as oxygen, carbon tetrafluoride, etc., selected according to the type of photoresist) are introduced into the ionizer 310, and radio frequency power or microwave energy is used to excite gas molecules, ionizing the gas to form a plasma containing a large number of active ions, electrons, and free radicals. To ensure uniform concentration of the initially generated plasma, a symmetrical electrode structure and uniform gas inlet method are used inside the ionizer 310. For example, the reactive gas is uniformly introduced into the ionization chamber through an annular gas inlet. At the same time, the radio frequency energy is evenly distributed on the electrode surface to avoid plasma aggregation caused by excessive local electric fields. The generated plasma is transported to the accelerator 320 through the connecting channel between the ionizer 310 and the accelerator 320. During the transportation process, the inner wall of the pipeline is smoothed to reduce collision losses between the plasma and the wall, thereby maintaining its concentration uniformity.

[0042] The plasma is accelerated to a preset speed by the accelerator 320 and then transported to the diffusion disk 330. An accelerating electric field composed of multiple electrodes is located within the accelerator 320. Once the plasma enters the accelerator 320, the electric field accelerates charged particles (such as positive ions) to a preset velocity. This velocity is determined based on parameters such as the distance between the reaction mechanism and the generation mechanism, and the plasma lifetime, ensuring that the plasma maintains a high level of activity upon reaching the reaction mechanism. During the acceleration process, the uniformity of the electric field strength is controlled to ensure that particles in all regions of the plasma receive the same acceleration, thus avoiding concentration distribution deviations caused by uneven acceleration. The accelerated plasma enters the diffusion disk 330 through the outlet of the accelerator 320.

[0043] The plasma is evenly diffused into the reaction mechanism via the diffusion disk 330. The diffusion disk 330 is located between the accelerator 320 and the reaction mechanism, and its surface is covered with a specially designed microporous structure. When the high-speed plasma enters the diffusion disk 330, it is diverted and diffused through these micropores. The micropores of the diffusion disk 330 are designed with a gradient distribution. For example, the pores in the center region are smaller and have a lower density, while the pores in the edge region are larger and have a higher density. This design can compensate for the difference in resistance caused by the different path lengths during the diffusion of the plasma. At the same time, the micropores are conical in shape (narrow at the inlet and wide at the outlet), which reduces turbulence during the outflow of the plasma and allows the plasma to enter the reaction mechanism in a laminar state. Through the action of the diffusion disk 330, the originally concentrated plasma flow is dispersed into a uniform airflow, forming a plasma environment with wide coverage and consistent concentration distribution within the reaction mechanism.

[0044] In some optional embodiments, the uniformly diffusing the plasma to the reaction mechanism through the diffusion disk 330 includes: S231, obtaining a diffusion resistance map of the diffusion disk 330, wherein the diffusion resistance map indicates the molecular diffusion resistance of each area on the diffusion disk 330; S232, obtaining the plasma ion type and the ion velocity when reaching the diffusion disk 330; S233, determining a first aperture of the central region of the diffusion disk 330 according to the ion type and a first preset relationship table, where the first aperture represents a diameter of the first diffusion hole 331 in the central region, the central region matches the ion output port 321 of the accelerator 320, and the first preset relationship table indicates a relationship between the ion type and the first aperture; S234, determining a first density in the central area of ​​the diffusion disk 330 according to the ion velocity and a second preset relationship table, where the first density represents a setting density of the first diffusion holes 331; S235, setting a second pore diameter and a second density of a second diffusion hole 332 according to the diffusion resistance map, the first density, and the first pore diameter, the second diffusion hole 332 being arranged around the central region, the second density representing a setting density of the second diffusion hole 332; S236, uniformly diffusing plasma to the reaction mechanism through the first diffusion hole 331 and the second diffusion hole 332.

[0045] Specifically, the diffusion resistance map is a "resistance distribution map" representing the difference in molecular diffusion resistance of different regions of the diffusion disc 330, which is generated based on the geometric structure of the diffusion disc 330 (such as the thickness of different regions and the distance from the reaction mechanism) and the motion characteristics of gas molecules. The diffusion resistance map is obtained through preliminary experiments or fluid simulation and contains the molecular diffusion resistance value of each small region on the diffusion disc 330. For example, the central region of the diffusion disc 330 (close to the ion output port 321 of the accelerator 320) has a lower molecular diffusion resistance value due to a short diffusion path and small solid resistance; the edge region has a higher molecular diffusion resistance value due to a long path and close to the device cavity wall, resulting in large solid resistance.

[0046] Ion type: that is, the type of active ions in the plasma, different ions have different molecular diameters, masses, and electrical properties (such as fluorine ions with a smaller diameter than trifluoromethyl positive ions), and there are differences in "flow resistance" when passing through the diffusion hole (large-diameter ions have greater resistance when passing through small holes).

[0047] Ion velocity: refers to the average motion speed of plasma when it reaches the diffusion disc 330, which is determined by the acceleration electric field strength of the accelerator 320; the higher the speed, the more ions reach the diffusion disc 330 per unit time, and the stronger the ability to pass through the diffusion hole.

[0048] The central region of the diffusion disc 330 is directly opposite the ion output port 321 of the accelerator 320, and the diffusion hole (first diffusion hole 331) parameters thereof need to be matched with the initial state of the plasma: the first pore diameter of the first diffusion hole 331 is determined by the ion type and the first preset relationship table. The first preset relationship table is a "ion type-minimum flow pore diameter" correspondence relationship established through preliminary experiments. For example, for small-diameter oxygen ions (about 0.3 nm), the first pore diameter can be set to 0.5-1 mm (to ensure smooth passage of ions and avoid "choke effect" due to too small pore diameter); for large-diameter trifluoromethyl positive ions (about 0.5 nm), the first pore diameter needs to be increased to 1-1.5 mm (to reduce the collision resistance of large ions when passing through).

[0049] The first density is the number of first diffusion holes 331 per unit area in the central region and is determined by the ion velocity and a second preset relationship table. The second preset relationship table relates "ion velocity - number of holes per unit area": ​​a higher ion velocity increases the number of ions impacting the central region per unit time and increases the ability of ions to pass through the first diffusion holes 331. Given a given desired plasma density, a lower first density is required to balance the plasma density passing through the first diffusion holes 331. At lower ion velocity, the first density is appropriately increased, thereby increasing the plasma density passing through the first diffusion holes 331.

[0050] Second diffuser holes 332 are distributed around the center (covering the edges and transition areas of the diffuser disc 330). Their parameters require a "resistance compensation" design based on the diffusion resistance map and the parameters of the first diffuser holes 331, balancing the diffusion effects at the center and edges. Diffusion resistance at the edges is higher than in the center, so the second aperture diameter must be larger than the first (increasing the aperture diameter reduces flow resistance). The second density must be designed in conjunction with the second aperture diameter to ensure that the plasma flow capacity at the edges matches that of the center. By properly arranging the first and second diffuser holes 331 and 332, the "ion flux per unit area" is uniform across the entire diffuser disc 330, ensuring uniform diffusion of the plasma to the reaction mechanism.

[0051] In some optional embodiments, setting the second pore size and the second density of the second diffusion holes 332 according to the diffusion resistance map, the first density, and the first pore size includes: S2351, obtaining a second concentric circle of the second diffusion hole 332; S2352: Acquire a first concentric circle of the first diffusion hole 331, where the first concentric circle and the second concentric circle share a common center; S2353: Obtain a diameter difference between the second concentric circle and the first concentric circle; S2354: Setting the second aperture according to the diameter difference and the first aperture; S2355: Determine an ion diffusion coefficient based on the diffusion resistance map, the first pore size, and the first density; S2356. Determine the second density according to the ion diffusion coefficient, the diffusion resistance map, and the diameter difference.

[0052] Specifically, refer to Figure 7 With the center point of the central area as the center, multiple first concentric circles with gradually increasing diameters are arranged within the central area, and first diffusion holes 331 are evenly distributed on the first concentric circles. Based on specific requirements, multiple second concentric circles with gradually increasing diameters are arranged around the first concentric circles, and multiple second diffusion holes 332 are evenly distributed on the second concentric circles.

[0053] Calculate the diameter difference between the second concentric circle and the first concentric circle, specifically calculate the diameter difference between any second concentric circle and the first concentric circle at the preset position. The first concentric circle at the preset position can be any first concentric circle set in the central area (such as the first concentric circle at the outermost edge of the central area), and no specific limitation is made here.

[0054] The diameter difference directly reflects the "difference in diffusion path length" between the area where the second diffusion hole 332 is located and the central area; the diameter difference The larger the diameter, the longer the diffusion path in the area where the second diffusion hole 332 is located, and the greater the molecular diffusion resistance (the resistance value in this area is higher in the resistance map). In order to reduce the flow resistance, the second pore diameter needs to be larger than the first pore diameter, and It is positively correlated with the aperture increment. For example, the basic relationship is: Second aperture = First aperture + ( is the proportionality coefficient, such as ). If the first aperture is , , then the second aperture , by increasing the aperture to compensate for the resistance caused by path growth.

[0055] The diffusion coefficient is inversely proportional to the diffusion resistance (the smaller the resistance, the easier the diffusion), and is directly proportional to the first pore size and the first density (the larger the pore size and the denser the pores, the larger the total flow area and the stronger the diffusion capacity).

[0056] The molecular diffusion resistance in the area where the second diffusion hole 332 is located Greater than the molecular diffusion resistance in the central area , and the diameter difference The bigger, The higher the diffusion coefficient of the edge area Diffusion coefficient near the center , compensating for the effects of resistance and distance by increasing the second density.

[0057] set up = , combined with the second aperture , and obtain the second density formula:

[0058] in, and is the correction factor ( For quantification attenuation effect on diffusion).

[0059] In some optional embodiments, the reaction mechanism reaction chamber and the reaction table 340, the adsorption plate 350 and the first lifting device 370 arranged in the reaction chamber, the adsorption plate 350 is fixedly set on the first lifting device 370, the reaction table 340 is fixedly set on the adsorption plate 350, and a plurality of adsorption through holes 351 are evenly arranged in the area of ​​the adsorption plate 350 located outside the reaction table 340, the vacuuming device includes a plurality of vacuuming pipes 360, and the vacuuming pipes 360 are connected to the reaction chamber; the control of the vacuuming device to vacuum the reaction mechanism so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed to obtain the target wafer includes: S310, obtaining an etching depth and an etching time of the wafer to be processed, wherein the etching depth represents a difference in depth between the first photoresist and the second photoresist, and the etching time represents a time for etching the first photoresist by plasma; S320, obtaining an ion density map of the wafer to be processed, where the ion density map indicates plasma density and plasma energy of various regions on the surface of the first photoresist; S330, controlling the extraction power of the plurality of vacuum pipes 360 and the lifting height of the first lifting device 370 according to the ion density map, the etching depth and the etching time, so that after the plurality of vacuum pipes 360 are vacuumed through the adsorption through-holes 351, the plasma uniformly etches the first photoresist to obtain the target wafer.

[0060] Specifically, the etching depth is the difference in thickness between the first photoresist (before etching) and the second photoresist (after etching); the etching time is the duration of time required to achieve the desired etching depth. The ion density map is a two-dimensional map generated by real-time acquisition of plasma distribution data on the surface of the wafer being processed using optical diagnostic equipment within the reaction chamber (such as an emission spectrometer or ion probe). Each pixel in the ion density map contains the plasma density (the number of active ions per unit volume) and the plasma energy (the average kinetic energy of the ions). The plasma density and plasma energy jointly determine the local etching rate: the higher the density and the greater the energy, the faster the etching rate.

[0061] Reference Figure 6 and Figure 8The multiple vacuum pipes 360 of the vacuum pumping device (corresponding to the adsorption holes 351 on the periphery of the adsorption disk 350 and distributed in a ring pattern, with different vacuum pipes 360 corresponding to the adsorption holes 351 in different areas) adjust the extraction power to change the local pressure and gas flow in the reaction chamber, thereby regulating the plasma density and energy. For example, for areas with relatively fast etching (such as the first area of ​​the photoresist), the extraction power of the corresponding vacuum pipe 360 ​​is increased, which accelerates the pumping rate of the vacuum pipe 360 ​​through the adsorption holes 351, driving the plasma in this area to be extracted more quickly, reducing the residence time and collision frequency of ions on the wafer surface, and reducing the local etching rate. For example, for areas with relatively slow etching (such as the second area of ​​the photoresist), the extraction power of the vacuum pipe 360 ​​in the corresponding area is reduced, thereby slowing down the pumping, extending the residence time of the plasma in this area, increasing the ion density and collision probability, and improving the local etching rate.

[0062] The power of each pipeline is dynamically allocated according to the rate difference ratio of each area in the ion density map to ensure that the etching rate deviation of each area after correction is less than the deviation threshold, thereby improving the uniformity of photoresist etching.

[0063] The first lifting mechanism 370 adjusts the vertical distance between the wafer to be processed and the plasma source (diffusion plate 330) by varying the height of the suction plate 350, indirectly affecting the density and energy of the plasma reaching the wafer surface. If the ion density profile indicates low global plasma density (slow overall etching rate), the first lifting mechanism 370 is controlled to raise the suction plate 350, shortening the distance between the wafer and the plasma source. This reduces plasma attenuation during transmission and increases the global ion density and etching rate. If etching in a localized area (such as the edge) remains slow after vacuum adjustment, the overall height can be slightly raised while simultaneously reducing the edge vacuum power to double-boost the ion density. Conversely, if the center region remains fast, the overall height can be lowered while simultaneously increasing the center vacuum power to double-boost the center etching rate. As etching progresses, the photoresist thickness decreases, and the reaction efficiency between ions and the photoresist changes (e.g., the thinner the remaining photoresist, the more sensitive the reaction). Dynamically fine-tuning the height is necessary to maintain a stable etching rate.

[0064] The vacuum pipe 360 ​​forms a "local flow field adjustment" through the adsorption through-hole 351, and specifically corrects the plasma density differences in each area; the lifting device optimizes the overall transmission efficiency of the plasma through "distance adjustment" and cooperates with the local correction; the two work together to make the plasma density and energy of each area on the wafer surface tend to be consistent, ensuring that the first photoresist is uniformly etched to the target depth within the preset etching time, and the surface flatness of the second photoresist finally formed is greater than the preset flatness, so as to obtain a qualified target wafer.

[0065] In some optional embodiments, the loading and unloading module includes a first loading and unloading mechanism 100 and a second loading and unloading mechanism 200, the second loading and unloading mechanism 200 includes a wafer placement unit 220, a wafer cooling unit and a wafer pick-and-place unit, the wafer cooling unit includes a cooling table 210, a cooling pipe 211 and a cooler 212; the target wafer is transferred from the reaction mechanism to the unloading position 120 by the loading and unloading module, including: S410, controlling the wafer placement unit to transfer the target wafer from the reaction mechanism to the cooling stage 210; S420, obtaining a preset cooling time and a target temperature of the target wafer, where the target temperature represents a first temperature of the target wafer before cooling begins and a second temperature of the target wafer after cooling ends; S430, controlling the cooling power of the cooler 212 according to the preset cooling time and the target temperature, so that the cooler 212 cools the target wafer on the cooling stage 210 through the cooling pipe 211; S440 , controlling the first loading and unloading mechanism 100 to transfer the cooled target wafer from the cooling platform 210 to the unloading position 120 .

[0066] Specifically, refer to Figure 4 and Figure 5 After the photoresist is thinned and the target wafer is obtained, the action of the wafer pick-up and placement unit in the second loading and unloading mechanism 200 is controlled. The wafer pick-up and placement unit takes out the target wafer that has completed etching from the reaction mechanism. The target wafer is at a high temperature due to the etching process, and temperature-related damage caused by direct transfer must be avoided. During the pick-up and placement process, the robotic arm maintains smooth movement to ensure that the wafer posture is stable, and then the target wafer is accurately placed on the cooling table 210 of the wafer cooling unit. Next, the system obtains the preset cooling time and the target temperature of the target wafer. Among them, the preset cooling time is a fixed cooling time set according to the wafer material, size and subsequent process requirements; the target temperature includes two key parameters, one is the first temperature before the target wafer starts to cool (that is, the real-time temperature when it is taken out of the reaction mechanism, which can be detected by an infrared thermometer), and the other is the second temperature to be reached after the cooling is completed (usually close to room temperature or a specific temperature required by subsequent processes, such as 25-30°C, the specific temperature is not limited).

[0067] The cooling power of chiller 212 is calculated and controlled based on the preset cooling time and target temperature. Chiller 212 is connected to cooling stage 210 via cooling pipe 211, through which coolant (such as cooling water or a dedicated cooling medium) flows. The system automatically adjusts the output power of chiller 212 (e.g., by adjusting the coolant flow rate and temperature) based on the difference between the first and second temperatures, the preset cooling time, and the heat transfer efficiency of cooling stage 210. This allows chiller 212 to transfer the cooling energy to cooling stage 210 via cooling pipe 211, which then evenly transfers the cooling energy to the target wafer, achieving precise cooling.

[0068] Finally, when the target wafer cools to the second temperature (i.e., cooling is complete), the first loading and unloading mechanism 100 is activated. The first loading and unloading mechanism 100 (equipped with a high-precision loading and unloading robot 130) smoothly removes the target wafer from the cooling table 210 and transfers it via a pre-set path to the unloading location 120 (e.g., an unloading stage or wafer storage box), completing the unloading process. Cooling by the cooling table 210 ensures that the target wafer temperature meets subsequent processing requirements, preventing problems such as wafer deformation and photoresist performance changes caused by high temperatures.

[0069] In some optional embodiments, the wafer loading and unloading unit includes a rotating chassis 231, a second lifting device 230, a first loading and unloading assembly and a second loading and unloading assembly, the rotating chassis 231 is fixedly set on the second lifting device 230, the first loading and unloading assembly and the second loading and unloading assembly are relatively arranged, and are both rotatably connected to the rotating chassis 231, the first loading and unloading assembly includes a first rotating arm 240, a second rotating arm 241 and a third rotating arm 242, the first end of the first rotating arm 240 is rotatably connected to the first area of ​​the rotating chassis 231, the second end of the first rotating arm 240 is rotatably connected to the first end of the second rotating arm 241, and the second end of the second rotating arm 241 is rotatably connected to the third rotating arm The first end of the arm 242 is rotatably connected, the second end of the third rotating arm 242 is fixedly connected to the first transfer member 243, the second loading and unloading assembly includes a fourth rotating arm 250, a fifth rotating arm 251 and a sixth rotating arm 252, the first end of the fourth rotating arm 250 is rotatably connected to the second area of ​​the rotating chassis 231, the second end of the fourth rotating arm 250 is rotatably connected to the first end of the fifth rotating arm 251, the second end of the fifth rotating arm 251 is rotatably connected to the first end of the sixth rotating arm 252, and the second end of the third rotating arm 242 is fixedly connected to the second transfer member 253; the control of the wafer placement unit to transfer the target wafer from the reaction mechanism to the cooling table 210 includes: S411, obtaining first position information of the target wafer; S412, obtaining second position information of the first transfer member 243 and / or the second transfer member 253; S413, generating, based on the first position information, the second position information, and the cooling position information of the cooling stage 210, a first rotation timing diagram in which the first end of the first rotating arm 240 rotates relative to the first area of ​​the rotating chassis 231, a second rotation timing diagram in which the first end of the second rotating arm 241 rotates relative to the second end of the first rotating arm 240, and a third rotation timing diagram in which the first end of the third rotating arm 242 rotates relative to the second end of the second rotating arm 241; and / or S414: Generate, based on the first position information, the second position information, and the cooling position information of the cooling stage 210, a fourth rotation timing diagram of the first end of the fourth rotating arm 250 rotating relative to the second area of ​​the rotating chassis 231, a fifth rotation timing diagram of the first end of the fifth rotating arm 251 rotating relative to the second end of the fourth rotating arm 250, and a sixth rotation timing diagram of the first end of the sixth rotating arm 252 rotating relative to the second end of the fifth rotating arm 251; S415, controlling the first end of the first rotating arm 240 to rotate relative to the first area of ​​the rotating chassis 231 according to the first rotation timing pattern, controlling the first end of the second rotating arm 241 to rotate relative to the second end of the first rotating arm 240 according to the second rotation timing pattern, and controlling the first end of the third rotating arm 242 to rotate relative to the second end of the second rotating arm 241 according to the third rotation timing pattern, so that the first transfer member 243 transfers the target wafer to the cooling table 210; and / or S416, according to the fourth rotation timing diagram, control the first end of the fourth rotating arm 250 to rotate relative to the second area of ​​the rotating chassis 231, according to the fifth rotation timing diagram, control the first end of the fifth rotating arm 251 to rotate relative to the second end of the fourth rotating arm 250, according to the fifth rotation timing diagram, and control the first end of the sixth rotating arm 252 to rotate relative to the second end of the fifth rotating arm 251 according to the sixth rotation timing diagram, so that the second transfer member 253 transfers the target wafer to the cooling platform 210.

[0070] Specifically, this application uses a position sensor (e.g., a laser positioner, a visual camera) within the reaction mechanism to obtain the specific coordinates of the target wafer within the reaction mechanism, i.e., the initial position of the target wafer (first position information). Using encoders (e.g., angle sensors) on the rotating chassis 231 and each rotating arm, the current position coordinates of the first transfer member 243 (the end of the first loading and unloading assembly) and / or the second transfer member 253 (the end of the second loading and unloading assembly) are collected in real time to determine their initial standby positions (second position information). The stored cooling position information on the surface of the cooling table 210 for placing the wafer is obtained, i.e., the cooling position of the target wafer.

[0071] When generating a timing map, the first position information, the second position information, and the cooling position information are first input into a preset generation model. The generation model is used to calculate the posture transformation matrix of the first transfer member 243, and then the rotation angles of each joint corresponding to the posture transformation matrix are solved through inverse kinematics. The rotation angles are then assigned to different time points, thereby forming a joint curve of the rotation angles of each joint and time. After smoothing and filtering the joint curve, the corresponding rotation timing map is obtained, namely, the first rotation timing map, the second rotation timing map, and the third rotation timing map. Thus, according to the first rotation timing map, the first end of the first rotating arm 240 is controlled to rotate relative to the first area of ​​the rotating chassis 231; according to the second rotation timing map, the first end of the second rotating arm 241 is controlled to rotate relative to the second end of the first rotating arm 240; and according to the third rotation timing map, the first end of the third rotating arm 242 is controlled to rotate relative to the second end of the second rotating arm 241, thereby transferring the target wafer to the cooling table 210.

[0072] The rotation timing diagram generation logic of the second loading and unloading component is consistent with that of the first loading and unloading component, and the fourth, fifth and sixth rotation timing diagrams are generated for the fourth, fifth and sixth rotating arms 252 respectively: the fourth rotating arm 250 rotates relative to the second area of ​​the rotating chassis 231 to determine the overall movement direction; the fifth rotating arm 251 rotates relative to the fourth rotating arm 250 to adjust the extension distance of the second transfer part 253; the sixth rotating arm 252 rotates relative to the fifth rotating arm 251 to fine-tune the posture of the second transfer part 253 to adapt to the wafer grasping and placement requirements.

[0073] The movements of the rotating arms of the first loading and unloading assembly and the second loading and unloading assembly are strictly synchronized to ensure that the motion trajectory of the first transfer member 243 and / or the second transfer member 253 is a continuous and smooth curve (to avoid wafer shaking caused by broken line motion) and there is no collision interference throughout the entire process.

[0074] According to the first rotation timing diagram, the first end of the first rotating arm 240 is controlled to rotate relative to the first area of ​​the rotating chassis 231, driving the entire first loading and unloading assembly to rotate toward the reaction mechanism; synchronously according to the second rotation timing diagram, the second rotating arm 241 is controlled to rotate relative to the first rotating arm 240, so that the first transfer member 243 gradually approaches the target wafer; synchronously according to the third rotation timing diagram, the third rotating arm 242 is controlled to rotate, and the posture of the first transfer member 243 is adjusted so that it is completely in contact with the surface of the wafer and then vacuum adsorption is started (grabbing the wafer); after the grabbing is completed, each rotating arm moves according to the reverse timing diagram (the first rotating arm 240 rotates in the opposite direction, and the second and third rotating arms 242 shrink in coordination), driving the target wafer to move from the reaction mechanism to above the cooling platform 210, and then by fine-tuning the angle of each rotating arm, the wafer is accurately placed in the cooling position.

[0075] When the second transfer member 253 needs to transfer a target wafer, the fourth rotating arm 250 is controlled to rotate relative to the second region of the rotating base 231, the fifth rotating arm 251 is controlled to rotate relative to the fourth rotating arm 250, and the sixth rotating arm 252 is controlled to rotate relative to the fifth rotating arm 251 according to the fourth, fifth, and sixth rotation timing patterns, so that the second transfer member 253 completes the action of grabbing the target wafer from the reaction mechanism and transferring it to the cooling stage 210. The first and second moving members can transfer the target wafers synchronously or separately, depending on the number of target wafers and the location of the reaction mechanism, which is not limited here.

[0076] Since the first loading and unloading assembly and the second loading and unloading assembly are relatively arranged on the rotating chassis 231, the height of the rotating chassis 231 can be adjusted by the second lifting device 230 (such as lowering the height when grabbing and raising the height when transferring to avoid obstacles), and the two can work alternately (such as when the first transfer part 243 transfers, the second transfer part 253 stands by to prepare for the next grabbing) or work synchronously to improve the transfer efficiency.

[0077] The implementation of the embodiment of the present invention has the following beneficial effects: when performing photoresist thinning, the wafer to be processed is transferred from the loading position 110 to the reaction mechanism by the loading and unloading module; the generating mechanism is controlled to uniformly transport the generated plasma to the reaction mechanism so that the plasma is evenly distributed within the reaction mechanism; the vacuum pumping device is controlled to vacuum the reaction mechanism so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed to obtain a target wafer, wherein the flatness of the second photoresist on the surface of the target wafer is greater than a preset flatness, and the second photoresist is obtained by etching the first photoresist; the target wafer is transferred from the reaction mechanism to the unloading position 120 by the loading and unloading module. In the technical solution of this embodiment, the generated plasma is uniformly transported to the reaction mechanism by the generating mechanism, and the vacuum pumping device is synchronously controlled to vacuum the reaction mechanism, so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed, and the photoresist thinning of the wafer can be completed as required, with high thinning efficiency and low cost.

[0078] In addition, an embodiment of the present invention provides a photoresist thinning device, which includes: a memory, a processor, and a computer program stored in the memory and executable on the processor.

[0079] The processor and the memory may be connected via a bus or other means.

[0080] It should be noted that the computer in this embodiment may correspond to include: Figure 1 The memory and processor in the embodiment shown can constitute Figure 1 Part of the system architecture platform in the illustrated embodiment, both belong to the same inventive concept, so both have the same implementation principles and beneficial effects, and will not be described in detail here.

[0081] The non-transient software program and instructions required to implement the uplink co-channel interference elimination method of the above embodiment are stored in the memory. When executed by the processor, the photoresist thinning method of the above embodiment is executed, for example, the above-described Figure 2 Method steps S100 to S400 in .

[0082] In addition, an embodiment of the present invention further provides a computer-readable storage medium storing computer-executable instructions. When the computer-executable instructions are used to execute the photoresist thinning method of the photoresist thinning device, for example, executing the above-described Figure 2 Method steps S100 to S400 in .

[0083] Those skilled in the art will appreciate that all or some of the steps and systems described above can be implemented as software, firmware, hardware, or any combination thereof. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application-specific integrated circuit. Such software may be distributed on computer-readable media, which may include computer storage media (or non-transitory media) and communication media (or transient media). As is well known to those skilled in the art, the term computer storage media encompasses volatile and non-volatile, removable, and non-removable media implemented in any method or technology for storing information, such as computer-readable instructions, data structures, program modules, or other data. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disks (DVDs) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to store the desired information and can be accessed by a computer. Furthermore, as is well known to those skilled in the art, communication media typically includes computer-readable instructions, data structures, program modules, or other data in a modulated data signal such as a carrier wave or other transport mechanism, and may include any information delivery media.

[0084] The above is a specific description of the preferred implementation of the present invention, but the present invention is not limited to the above implementation. Those skilled in the art can also make various equivalent modifications or substitutions under the shared conditions that do not violate the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of the present invention.

Claims

1. A photoresist thinning method, characterized in that: Applied to photoresist thinning equipment, the photoresist thinning equipment includes a loading and unloading module and an etching module, the etching module includes at least one etching unit, the etching unit includes a photoresist etching device and a vacuum device, the photoresist etching device includes a generating mechanism and a reaction mechanism, and the photoresist thinning method includes: Transferring the wafer to be processed from the loading position to the reaction mechanism through the loading and unloading module; controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism so that the plasma is uniformly distributed within the reaction mechanism; Controlling the vacuum pumping device to perform vacuum treatment on the reaction mechanism so that the plasma uniformly etches the first photoresist on the surface of the wafer to be processed to obtain a target wafer, wherein the flatness of the second photoresist on the surface of the target wafer is greater than a preset flatness, and the second photoresist is obtained by etching the first photoresist; The target wafer is transferred from the reaction mechanism to a loading and unloading position by the loading and unloading module.

2. The photoresist thinning method according to claim 1, wherein: The generating mechanism includes an ionizer, an accelerator, and a diffusion disk; and controlling the generating mechanism to uniformly deliver the generated plasma to the reaction mechanism includes: generating plasma with uniform concentration through the ionizer and delivering the plasma to the accelerator; The plasma is accelerated to a preset speed by the accelerator and then transported to the diffusion disk; The plasma is uniformly diffused to the reaction mechanism through the diffusion disk.

3. The photoresist thinning method according to claim 2, wherein: The step of uniformly diffusing the plasma to the reaction mechanism through the diffusion disk comprises: obtaining a diffusion resistance map of the diffusion disk, wherein the diffusion resistance map indicates the molecular diffusion resistance of each area on the diffusion disk; obtaining the ion type of the plasma and the ion velocity when reaching the diffusion disk; determining a first aperture of a central region on the diffusion disk according to the ion type and a first preset relationship table, wherein the first aperture represents a diameter of a first diffusion hole in the central region, the central region matches an ion output port of the accelerator, and the first preset relationship table indicates a relationship between the ion type and the first aperture; determining a first density in the central area of ​​the diffusion disk according to the ion velocity and a second preset relationship table, wherein the first density represents a setting density of the first diffusion holes; setting a second pore size and a second density of second diffusion holes according to the diffusion resistance map, the first density, and the first pore size, wherein the second diffusion holes are arranged around the central area, and the second density represents the arrangement density of the second diffusion holes; The plasma is uniformly diffused to the reaction mechanism through the first diffusion hole and the second diffusion hole.

4. The photoresist thinning method according to claim 3, wherein: The setting of the second pore size and the second density of the second diffusion hole according to the diffusion resistance map, the first density and the first pore size includes: Acquire a second concentric circle of the second diffusion hole; Acquire a first concentric circle of the first diffusion hole, where the first concentric circle and the second concentric circle share a common center; Obtaining a diameter difference between the second concentric circle and the first concentric circle; setting the second aperture according to the diameter difference and the first aperture; determining an ion diffusion coefficient based on the diffusion resistance map, the first pore size, and the first density; The second density is determined according to the ion diffusion coefficient, the diffusion resistance map, and the diameter difference.

5. The photoresist thinning method according to claim 1, wherein: The reaction mechanism comprises a reaction chamber and a reaction table, an adsorption plate and a first lifting device arranged in the reaction chamber, wherein the adsorption plate is fixedly arranged on the first lifting device, the reaction table is fixedly arranged on the adsorption plate, a plurality of adsorption through holes are evenly arranged in an area of ​​the adsorption plate located outside the reaction table, the vacuum pumping device comprises a plurality of vacuum pumping pipes, and the vacuum pumping pipes are connected to the reaction chamber; and the vacuum pumping device is controlled to perform a vacuum treatment on the reaction mechanism so that plasma uniformly etches the first photoresist on the surface of the wafer to be processed to obtain a target wafer, comprising: Obtaining an etching depth and an etching time of the wafer to be processed, wherein the etching depth represents a difference in depth between the first photoresist and the second photoresist, and the etching time represents a time for etching the first photoresist by plasma; Acquiring an ion density map of the wafer to be processed, wherein the ion density map indicates plasma density and plasma energy of various regions on the surface of the first photoresist; The extraction power of the plurality of vacuum pipes and the lifting height of the first lifting device are controlled according to the ion density map, the etching depth and the etching time, so that after the plurality of vacuum pipes are vacuumed through the adsorption through holes, the plasma uniformly etches the first photoresist to obtain the target wafer.

6. The photoresist thinning method according to claim 1, wherein: The loading and unloading module includes a first loading and unloading mechanism and a second loading and unloading mechanism, the second loading and unloading mechanism includes a wafer placement unit, a wafer cooling unit and a wafer pick-and-place unit, the wafer cooling unit includes a cooling table, a cooling pipe and a cooling machine; the target wafer is transferred from the reaction mechanism to the unloading position by the loading and unloading module, including: Controlling the wafer handling unit to transfer the target wafer from the reaction mechanism to the cooling stage; Obtaining a preset cooling time and a target temperature of the target wafer, wherein the target temperature represents a first temperature of the target wafer before cooling begins and a second temperature of the target wafer after cooling ends; controlling the cooling power of the cooler according to the preset cooling time and the target temperature, so that the cooler cools the target wafer on the cooling table through the cooling pipe; The first loading and unloading mechanism is controlled to transfer the target wafer that has been cooled from the cooling table to the unloading position.

7. The photoresist thinning method according to claim 6, characterized in that: The wafer loading and placing unit includes a rotating chassis, a second lifting device, a first loading and unloading assembly and a second loading and unloading assembly, the rotating chassis is fixedly arranged on the second lifting device, the first loading and unloading assembly and the second loading and unloading assembly are arranged opposite to each other and are both rotatably connected to the rotating chassis, the first loading and unloading assembly includes a first rotating arm, a second rotating arm and a third rotating arm, the first end of the first rotating arm is rotatably connected to the first area of ​​the rotating chassis, the second end of the first rotating arm is rotatably connected to the first end of the second rotating arm, the second end of the second rotating arm is rotatably connected to the first end of the third rotating arm, and the second end of the third rotating arm is fixedly connected to the first transfer member, the second loading and unloading assembly includes a fourth rotating arm, a fifth rotating arm and a sixth rotating arm, the first end of the fourth rotating arm is rotatably connected to the second area of ​​the rotating chassis, the second end of the fourth rotating arm is rotatably connected to the first end of the fifth rotating arm, the second end of the fifth rotating arm is rotatably connected to the first end of the sixth rotating arm, and the second end of the third rotating arm is fixedly connected to the second transfer member; controlling the wafer loading and placing unit to transfer the target wafer from the reaction mechanism to the cooling table includes: Acquiring first position information of the target wafer; Acquiring second position information of the first transfer member and / or the second transfer member; generating, based on the first position information, the second position information, and the cooling position information of the cooling stage, a first rotation timing diagram in which the first end of the first rotating arm rotates relative to the first area of ​​the rotating chassis, a second rotation timing diagram in which the first end of the second rotating arm rotates relative to the second end of the first rotating arm, and a third rotation timing diagram in which the first end of the third rotating arm rotates relative to the second end of the second rotating arm; and / or generating, based on the first position information, the second position information, and the cooling position information of the cooling stage, a fourth rotation timing diagram in which the first end of the fourth rotating arm rotates relative to the second area of ​​the rotating chassis, a fifth rotation timing diagram in which the first end of the fifth rotating arm rotates relative to the second end of the fourth rotating arm, and a sixth rotation timing diagram in which the first end of the sixth rotating arm rotates relative to the second end of the fifth rotating arm; Controlling the first end of the first rotating arm to rotate relative to the first area of ​​the rotating chassis according to the first rotation timing map, controlling the first end of the second rotating arm to rotate relative to the second end of the first rotating arm according to the second rotation timing map, and controlling the first end of the third rotating arm to rotate relative to the second end of the second rotating arm according to the third rotation timing map, so that the first transfer member transfers the target wafer to the cooling table; and / or According to the fourth rotation timing diagram, the first end of the fourth rotating arm is controlled to rotate relative to the second area of ​​the rotating chassis, according to the fifth rotation timing diagram, the first end of the fifth rotating arm is controlled to rotate relative to the second end of the fourth rotating arm, and according to the sixth rotation timing diagram, the first end of the sixth rotating arm is controlled to rotate relative to the second end of the fifth rotating arm, so that the second transfer member transfers the target wafer to the cooling table.

8. The photoresist thinning method according to claim 7, characterized in that: The method of transferring the wafer to be processed from the loading position to the reaction mechanism by the loading and unloading module includes: Controlling the first loading and unloading mechanism to transfer the wafer to be processed from the loading position to the wafer placement unit; Obtaining inscribed circles between all the photoresist etching devices and the wafer placement units; When the first transfer member and the second transfer member move the wafer to be processed out of the wafer placement unit, controlling the first transfer member and the second transfer member to be located in a target area covered by the inscribed circle; The first end of the first rotating arm is controlled to rotate relative to the first area of ​​the rotating chassis, and the first end of the fourth rotating arm is controlled to rotate relative to the second area of ​​the rotating chassis, so that the first transfer member and the second transfer member rotate in the target area and transfer the wafer to be processed to the reaction mechanism.

9. A photoresist thinning device, characterized in that: include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the photoresist thinning method according to any one of claims 1 to 8 when executing the computer program.

10. A computer storage medium, characterized in that The computer storage medium stores computer-executable instructions, and the computer-executable instructions are used to execute the photoresist thinning method according to any one of claims 1 to 8.

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