Semiconductor film deposition equipment

Abstract

The embodiment of the invention provides semiconductor thin film deposition equipment, the interior of the semiconductor thin film deposition equipment is divided into a normal pressure area and a vacuum area, the normal pressure area and the vacuum area are separated, and a communication channel is arranged between the normal pressure area and the vacuum area; the pre-cleaning working area is arranged in the normal-pressure area; a pre-cleaning device for pre-cleaning the silicon wafer is arranged in the pre-cleaning working area; the deposition working area is arranged in the vacuum area; a deposition device for depositing a thin film layer on the surface of the silicon wafer is arranged in the deposition working area; the first wafer conveying device is arranged in the communication channel and is used for conveying the pre-cleaned silicon wafer to the vacuum area; and the vacuumizing device is used for vacuumizing the vacuum area, so that the vacuum area is kept in a vacuum environment. According to the semiconductor thin film deposition equipment provided by the embodiment of the invention, the silicon wafer directly enters a vacuum environment after being pre-cleaned, and the probability that an oxide layer is regenerated on the surface of the silicon wafer is reduced.

Description

Technical Field

[0001] The present application relates to semiconductor manufacturing technology, and in particular to a semiconductor thin film deposition device. Background Art

[0002] As the geometric size of integrated circuits continues to decrease, traditional silicon oxide gates are no longer applicable due to their significant gate leakage current problem. Instead, new high-K gate dielectrics are integrated into field-effect transistor devices to solve the gate leakage current problem.

[0003] One approach to forming a high-K gate dielectric involves pre-cleaning the silicon wafer with RCA and DHF solutions before the gate oxide process to remove organic matter, metal ions, particulate matter, and the natural oxide layer on the substrate surface. The silicon wafer surface is then further cleaned with NH4F solution to form a stable, flat microstructure on the surface. The silicon wafer is then placed in a high-K gate dielectric deposition system for deposition of the high-K gate dielectric layer. However, because the cleaning and high-K gate dielectric layer deposition stages are performed in two different devices, the cleaned silicon wafer is exposed to air during transfer between devices, causing the natural oxide layer to regenerate on the silicon wafer surface. This can lead to defects in the subsequently formed high-K gate dielectric layer, which in turn affects device performance.

[0004] Another approach uses plasma to remove the natural oxide layer on the silicon wafer surface before the gate oxide process. Hydrogen (H2) and an optional inert gas are introduced into the process chamber, and a microwave plasma source is used to generate plasma-excited species. This method exposes the silicon wafer to the plasma-excited species to form a modified interface layer, upon which a high-k dielectric layer is deposited using atomic layer deposition (ALD). However, plasma bombardment can damage the silicon wafer surface to a certain extent, affecting the quality of the high-k dielectric layer and, consequently, device performance. Summary of the Invention

[0005] In order to solve one of the above-mentioned technical defects, a semiconductor thin film deposition device is provided in an embodiment of the present application.

[0006] According to a first aspect of an embodiment of the present application, a semiconductor thin film deposition apparatus is provided, wherein the interior of the apparatus is divided into a normal pressure region and a vacuum region, the normal pressure region and the vacuum region are separated, and a connecting passage is provided between the normal pressure region and the vacuum region; the semiconductor thin film deposition apparatus further comprises:

[0007] The pre-cleaning work area is arranged in the normal pressure area; the pre-cleaning work area is provided with a pre-cleaning device for pre-cleaning the silicon wafer;

[0008] The deposition working area is arranged in the vacuum area; the deposition working area is provided with a deposition device for depositing a thin film layer on the surface of the silicon wafer;

[0009] The first wafer conveying device is arranged in the communication passage and is used for conveying the pre-cleaned silicon wafer to the vacuum area.

[0010] The vacuumizing device is used for vacuumizing the vacuum area, so that the vacuum area is kept in a vacuum environment.

[0011] The technical scheme provided by the embodiment of the present application divides the internal structure of the semiconductor thin film deposition equipment into a normal pressure area and a vacuum area, and the normal pressure area and the vacuum area are separated and a communication passage is arranged between the normal pressure area and the vacuum area. The semiconductor thin film deposition equipment further comprises: a pre-cleaning working area arranged in the normal pressure area; a pre-cleaning device arranged in the pre-cleaning working area and used for pre-cleaning the silicon wafer; a deposition working area arranged in the vacuum area; a deposition device arranged in the deposition working area and used for depositing a thin film layer on the surface of the silicon wafer; a first wafer conveying device arranged in the communication passage and used for conveying the pre-cleaned silicon wafer to the vacuum area; and a vacuumizing device used for vacuumizing the vacuum area, so that the vacuum area is kept in a vacuum environment. In this way, the silicon wafer is directly put into the vacuum environment after pre-cleaning, and is not exposed to air for a long time, so that the probability of re-oxidation on the surface of the silicon wafer is reduced, and the quality of the deposited thin film layer on the surface of the silicon wafer is improved, which is beneficial to improving the performance of the device. BRIEF DESCRIPTION OF DRAWINGS

[0012] The accompanying drawings, which are included to provide a further understanding of the present application, constitute a part of the present application, and the illustrative embodiments of the present application and their description serve to explain the present application, and do not limit the present application in any way. In the drawings:

[0013] Figure 1 The structure schematic diagram of the semiconductor thin film deposition equipment provided by the embodiment of the present application;

[0014] Figure 2 The semiconductor thin film deposition operation method provided by the embodiment of the present application.

[0015] Reference signs:

[0016] 11-normal pressure area; 12-vacuum area; 13-pre-cleaning working area; 14-deposition working area; 15-transition area;

[0017] 2-first wafer conveying device;

[0018] 3-wafer loading device;

[0019] 4-second wafer conveying device;

[0020] 5-third wafer conveying device. DETAILED DESCRIPTION

[0021] In order to make the technical solutions and advantages of the embodiments of the present application clearer, the exemplary embodiments of the present application are further described in detail below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0022] The present embodiment provides a semiconductor thin film deposition device, which integrates the functions of pre-cleaning and thin film deposition of a silicon wafer, so that the silicon wafer is directly subjected to thin film deposition after pre-cleaning, avoids contact with air, thereby improving the surface quality of the silicon wafer and facilitating improvement of the performance of the semiconductor device formed on the surface of the silicon wafer.

[0023] As shown in Figure 1 The present embodiment provides a semiconductor thin film deposition device, which integrates the functions of pre-cleaning and thin film deposition of a silicon wafer, so that the silicon wafer is directly subjected to thin film deposition after pre-cleaning, avoids contact with air, thereby improving the surface quality of the silicon wafer and facilitating improvement of the performance of the semiconductor device formed on the surface of the silicon wafer.

[0024] The semiconductor thin film deposition device further comprises a pre-cleaning working area 13 and a deposition working area 14. The pre-cleaning working area 13 is arranged in the normal pressure area 11, and the pre-cleaning working area 13 is provided with a pre-cleaning device for pre-cleaning the silicon wafer.

[0025] The deposition working area 14 is arranged in the vacuum area 12, and the deposition working area 14 is provided with a deposition device for depositing a thin film layer on the surface of the silicon wafer.

[0026] The semiconductor thin film deposition device further comprises a first wafer conveying device 2 arranged in the communication passage and used for conveying the pre-cleaned silicon wafer to the vacuum area 12.

[0027] The vacuumizing device is used for vacuumizing the vacuum area 12, so that the vacuum area 12 is kept in a vacuum environment.

[0028] In the above scheme, the pre-cleaning device can have the functions of BOE, DHF, two-fluid, N2 drying, etc., and is used for cleaning the silicon wafer. In the BOE cleaning process, hydrofluoric acid and nitric acid are mixed into a cleaning solution in a certain proportion, the silicon wafer to be cleaned is put into the cleaning solution, and the duration is about 20-30 seconds. Then the silicon wafer is taken out of the cleaning solution, cleaned with deionized water, and finally dried.

[0029] In the BOE cleaning process, the silicon wafer is cleaned by using a diluted hydrofluoric acid solution to remove the oxide layer on the surface of the silicon wafer. The specific cleaning process can be as follows: the silicon wafer is placed in the diluted hydrofluoric acid solution for a period of time, then taken out, cleaned with deionized water, and finally dried.

[0030] In the two-fluid cleaning process, high-pressure gas and cleaning liquid are simultaneously sprayed onto the surface of the silicon wafer through a nozzle, which can remove contaminants such as particles, organic matter, and metal ions on the surface of the silicon wafer.

[0031] The pre-cleaning device also has a cleaning assembly that can perform circumferential motion, which is used to clean the silicon wafer.

[0032] In the above scheme, the deposition device can be an atomic layer deposition (ALD) process, which is configured with a precursor supply system, a gas distribution system, a heating system, a plasma generation system, etc. Two kinds of precursor gases are introduced into the reaction chamber alternately, and the reaction chamber is purged with inert gas after each reaction to ensure that a single atomic layer thickness of thin film is deposited on the surface of the silicon wafer each time.

[0033] The working process of the above device is as follows: first, the silicon wafer entering the normal pressure area 11 is sent to the pre-cleaning working area 13, and the silicon wafer is pre-cleaned by the pre-cleaning device. After pre-cleaning, the silicon wafer is sent to the first wafer conveying device 2, and the vacuum device can be started in advance to vacuumize the vacuum area 12, so that the vacuum area maintains a vacuum environment. Then the silicon wafer enters the vacuum area 12 through the first wafer conveying device 2, and then enters the deposition working area 14, and a thin film layer is deposited on the surface of the silicon wafer by the deposition device.

[0034] In this process, the pre-cleaned silicon wafer directly enters the vacuum environment and is not exposed to the air for a long time, which reduces the probability of re-oxidation on its surface, thereby improving the quality of the deposited thin film layer on its surface and improving the performance of the device.

[0035] The technical scheme provided by the embodiment is characterized in that the interior of the semiconductor thin film deposition equipment is divided into an atmospheric pressure zone and a vacuum zone, the atmospheric pressure zone and the vacuum zone are separated, and a communication passage is arranged between the atmospheric pressure zone and the vacuum zone; the semiconductor thin film deposition equipment further comprises: a pre-cleaning work zone arranged in the atmospheric pressure zone; a pre-cleaning device for pre-cleaning the silicon wafer is arranged in the pre-cleaning work zone; a deposition work zone arranged in the vacuum zone; a deposition device for depositing a thin film layer on the surface of the silicon wafer is arranged in the deposition work zone; a first wafer conveying device arranged in the communication passage and used for conveying the pre-cleaned silicon wafer to the vacuum zone; and a vacuumizing device used for vacuumizing the vacuum zone and keeping the vacuum zone in a vacuum environment, so that the silicon wafer directly enters the vacuum environment after pre-cleaning and is not exposed to air for a long time, thereby reducing the probability of re-oxidation on the surface of the silicon wafer and improving the quality of the deposited thin film layer on the surface of the silicon wafer, which is beneficial to improving the performance of a device.

[0036] On the basis of the above technical scheme, the wafer loading device 3 can be arranged at the entrance of the atmospheric pressure zone 11 and used for sending the silicon wafer into the atmospheric pressure zone 11. The number of the wafer loading device 3 can be at least one, and the number can be determined according to the capacity of the deposition equipment. In the embodiment, four wafer loading devices 3 are arranged at the entrance of the atmospheric pressure zone 11. The wafer loading device 3 can be a wafer loading machine in the prior art, or other forms can be adopted as long as the silicon wafer can be sent into the atmospheric pressure zone 11.

[0037] Further, the second wafer conveying device 4 can be arranged in the atmospheric pressure zone 11 and used for sending the silicon wafer into the pre-cleaning work zone 13 and sending the pre-cleaned silicon wafer into the first wafer conveying device 2. The second wafer conveying device 4 can be an arm for conveying the silicon wafer in the prior art, or a mechanical hand can be adopted according to the requirement.

[0038] One implementation is that two or more pre-cleaning work zones 13 are arranged in the atmospheric pressure zone 11, and the second wafer conveying device 4 can send the silicon wafer into the corresponding pre-cleaning work zone 13, so that the silicon wafers can be pre-cleaned in parallel and the efficiency can be doubled. In the embodiment, two pre-cleaning work zones 13 are arranged on the two sides of the atmospheric pressure zone 11. The second wafer conveying device 4 is located between the two pre-cleaning work zones 13 and can send the silicon wafer into the corresponding pre-cleaning work zone 13.

[0039] Further, the pre-cleaning work zone 13 is arranged as a closed area, the atmospheric pressure zone 11 in the middle is separated by a partition, and an entrance and an exhaust valve are arranged on the partition.

[0040] The pre-cleaning work zone 13 is provided with 3-4 cleaning containers, the cleaning containers can be arranged in two layers, and the second wafer conveying device 4 can convey the silicon wafer into the corresponding cleaning container.

[0041] The third wafer conveying device 5 can be an arm used to carry the silicon wafer in the prior art, or a mechanical hand can be used according to the requirement.

[0042] In an embodiment, two or more deposition work areas 14 are used, and the silicon wafer can be sent into the corresponding deposition work area 14, so that the thin film deposition can be performed on multiple silicon wafers in parallel, and the efficiency is doubled. In this embodiment, two deposition work areas 14 are used, which are arranged on the two sides of the vacuum area 12. The third wafer conveying device 5 is located between the two deposition work areas 14, and can send the silicon wafer entering the vacuum area 12 to the corresponding deposition work area 14.

[0043] Further, the deposition work area 14 is arranged as a closed area, and a partition is used to separate the deposition work area 14 from the intermediate vacuum area 12. An inlet and an exhaust valve are arranged on the partition to avoid the influence of the change of the external air pressure on the environment of the silicon wafer.

[0044] On the basis of the above technical solution, a nitrogen blowing device is further arranged in the deposition equipment, which is used to send nitrogen into the normal pressure area 11 to reduce the oxygen concentration of the normal pressure area 11, and further reduce the probability of forming an oxide layer on the surface of the silicon wafer.

[0045] In the application process, during the pre-cleaning of the silicon wafer, nitrogen is introduced into the normal pressure area 11, and the normal pressure area 11 is vacuumized when reaching the atmospheric pressure. Then, the silicon wafer returns to the normal pressure area 11 from the pre-cleaning work area 13 and enters the vacuum area 12, so that the acid gas volatilized in the pre-cleaning process cannot enter the deposition work area 14, and the cleanliness of the deposition work area 14 is ensured.

[0046] Further, the deposition equipment further comprises a transition area 15 arranged between the normal pressure area 11 and the vacuum area 12 and adjacent to and separated from the normal pressure area 11 and the vacuum area 12. The first wafer conveying device 2 extends from the transition area 15 to the vacuum area 12. The vacuumizing device is further used to vacuumize the transition area 15 to change the transition area 15 from the normal pressure environment to the vacuum environment. For example, a partition is used to separate the transition area 15 between the normal pressure area 11 and the vacuum area 12, and the partition is provided with an inlet and an outlet and is provided with an exhaust valve.

[0047] In the application process, after the pre-cleaning of the silicon wafer, the silicon wafer enters the transition area 15 from the normal pressure area 11, and then the transition area 15 is vacuumized to the vacuum environment. Then, the silicon wafer is conveyed from the transition area 15 to the vacuum area 12, so that the pressure loss of the vacuum area 12 is avoided, and the vacuum environment of the vacuum area 12 is maintained, thereby further reducing the probability of oxidation on the surface of the silicon wafer.

[0048] A nitrogen purge device may also be provided in the transition zone 15 . Nitrogen is first introduced into the transition zone 15 , and when the pressure reaches atmospheric pressure, the normal pressure zone 11 is evacuated, which is beneficial to reducing the oxygen content in the transition zone 15 .

[0049] The second wafer transport device 4 is used to transfer silicon wafers between the wafer loading device 3 , the pre-cleaning work area 13 and the transition area 15 . The third wafer transport device 5 is used to transfer silicon wafers between the first wafer transport device 2 and the deposition work area 14 .

[0050] The first wafer transport device 2 extends from the transition zone 15 to the vacuum zone 12. In one embodiment, the first wafer transport device includes a support frame, a transmission mechanism, a support frame, and a drive mechanism. The support frame is the main supporting structure, and all components are arranged on the support frame.

[0051] The conveyor mechanism is mounted on the support frame, extending from the transition zone 15 to the vacuum zone 12 and moving relative to the support frame. The support frame, used to support the silicon wafer, is mounted on the conveyor mechanism and moves synchronously with the conveyor mechanism. A drive mechanism is connected to the conveyor mechanism to provide driving force to the conveyor mechanism. The conveyor mechanism can be a conveyor chain or a conveyor belt.

[0052] Specifically, the first wafer transport device 2 is sealed in the connecting channel, and entrances and exits and sealed doors are set at the ends of the connecting channel facing the transition zone 15 and the vacuum zone 12. The sealed door on the side of the transition zone 15 is opened, and the silicon wafer enters the first wafer transport device 2, and then the sealed door is closed; when the silicon wafer is transported to its place, the sealed door on the side of the vacuum zone 12 is opened to allow the silicon wafer to enter the vacuum zone 12.

[0053] The above technical solution integrates wet pre-cleaning and deposition processes in the same equipment. For the gate oxide film, the pre-cleaned silicon wafer directly enters the deposition work area to complete the high-K gate oxide deposition in a short time, which can minimize the formation of a natural oxide layer on the surface of the silicon wafer, thereby improving the quality of the high-K gate oxide deposition film layer, which is beneficial to improving device performance.

[0054] like Figure 2 As shown, based on the above technical solution, this embodiment further provides a semiconductor thin film deposition method, including:

[0055] Step 101: Send the silicon wafers that have entered the normal pressure zone into the pre-cleaning work area, and pre-clean the silicon wafers using a pre-cleaning device.

[0056] In this step, the silicon wafers can be transported to the pre-cleaning work area 13 in the normal pressure area by manual transport, a transport cart, or a robotic arm. Alternatively, the silicon wafers can be first transported to the normal pressure area 11 by the wafer loading device 3 and then transported to the pre-cleaning work area 13 by the second wafer transport device 4, as described above.

[0057] The pre-cleaning device can have the functions of BOE, DHF, two-fluid, N2 drying, etc. to clean the silicon wafer.

[0058] In step 102, the vacuum area is vacuumized by the vacuumizing device, so that the vacuum area is kept in a vacuum environment. The vacuum area is separated from the normal pressure area, and a communication passage is arranged between the vacuum area and the normal pressure area.

[0059] The device is provided with two independent spaces, i.e. the vacuum area 12 and the normal pressure area 11, which are separated from each other, and a communication passage is arranged between the vacuum area 12 and the normal pressure area 11.

[0060] In step 103, the silicon wafer after pre-cleaning is sent into the communication passage, and the first wafer conveying device is used to send the silicon wafer from the normal pressure area into the vacuum area.

[0061] The silicon wafer after pre-cleaning enters the vacuum area 12 from the communication passage. The first wafer conveying device can be an arm used to convey the silicon wafer in the prior art, or a mechanical hand can be used according to the requirement.

[0062] It can be understood that, after the silicon wafer enters the vacuum area 12, the vacuum area can be continuously vacuumized to avoid the loss of vacuum.

[0063] In step 104, the silicon wafer entering the vacuum area is sent into the deposition working area, and the deposition device is used to deposit a thin film layer on the surface of the silicon wafer.

[0064] The first wafer conveying device can be directly connected to the deposition working area, so that the silicon wafer directly enters the deposition working area. Alternatively, a third wafer conveying device can be used to send the silicon wafer from the first wafer conveying device into the deposition working area.

[0065] The deposition working area is provided with a deposition device, which is used to deposit a thin film layer on the surface of the silicon wafer. For example, the deposition working area is provided with a gate oxide deposition device, which is used to complete the deposition of high-K gate oxide.

[0066] The above steps are used to send the silicon wafer entering the normal pressure area into the pre-cleaning working area, and the pre-cleaning device is used to pre-clean the silicon wafer; the vacuum area is vacuumized by the vacuumizing device, so that the vacuum area is kept in a vacuum environment; the vacuum area is separated from the normal pressure area, and a communication passage is arranged between the vacuum area and the normal pressure area; the silicon wafer after pre-cleaning is sent into the communication passage, and the first wafer conveying device is used to send the silicon wafer from the normal pressure area into the vacuum area; the silicon wafer entering the vacuum area is sent into the deposition working area, and the deposition device is used to deposit a thin film layer on the surface of the silicon wafer. After the silicon wafer is pre-cleaned, the silicon wafer is directly sent into the vacuum area, and the deposition of a thin film layer is performed in the vacuum area, so that the natural oxide layer formed on the surface of the silicon wafer can be avoided to the maximum extent, and the quality of the deposited high-K gate oxide thin film layer is improved, which is beneficial to improving the performance of the device.

[0067] On the basis of the above technical solution, the deposition equipment is further provided with a nitrogen blowing device for sending nitrogen into the normal pressure area 11 to reduce the oxygen concentration of the normal pressure area 11 and further reduce the probability of forming an oxide layer on the surface of the silicon wafer. Specifically, nitrogen can be first sent into the normal pressure area 11, and the normal pressure area 11 is vacuumized after reaching atmospheric pressure, so that the silicon wafer directly enters a vacuum environment after coming out of the pre-cleaning work area, and then enters the vacuum area through the first wafer conveying device 2, to ensure that the acid gas volatilized in the pre-cleaning process does not enter the deposition work area 14 and ensure the cleanliness of the deposition work area 14.

[0068] On the basis of the above technical solution, the deposition equipment is further provided with a transition area 15 arranged between the normal pressure area 11 and the vacuum area 12 and adjacent to and separated from the normal pressure area 11 and the vacuum area 12. The first wafer conveying device 2 extends from the transition area 15 to the vacuum area 12. The vacuumizing device is further used for vacuumizing the transition area 15 to change the transition area 15 from a normal pressure environment to a vacuum environment. For example, a partition plate is used to separate the transition area 15 between the normal pressure area 11 and the vacuum area 12, the partition plate is provided with an inlet and an outlet and is provided with an exhaust valve.

[0069] In the above step, the pre-cleaned silicon wafer is sent into the communication channel, specifically including: the pre-cleaned silicon wafer is sent into the transition area arranged between the normal pressure area and the vacuum area and adjacent to and separated from the normal pressure area and the vacuum area; the first wafer conveying device extends from the transition area to the vacuum area. Then the transition area is vacuumized by the vacuumizing device to change the transition area from a normal pressure environment to a vacuum environment. Then the pre-cleaned silicon wafer is sent into the first wafer conveying device and sent into the vacuum area through the first wafer conveying device.

[0070] In the application process of the scheme, after the pre-cleaning of the silicon wafer, the silicon wafer first enters the transition area 15 from the normal pressure area 11, and then the transition area 15 is vacuumized to a vacuum environment. Then the silicon wafer is conveyed from the transition area 15 to the vacuum area 12, which can avoid the pressure loss of the vacuum area 12, so that the vacuum area 12 always maintains a vacuum environment, thereby further reducing the probability of oxidation on the surface of the silicon wafer.

[0071] A nitrogen blowing device can also be arranged in the transition area 15, nitrogen is first introduced into the transition area 15, and the normal pressure area 11 is vacuumized when reaching atmospheric pressure, which is conducive to reducing the oxygen content of the transition area 15.

[0072] The above technical solution integrates the wet pre-cleaning and deposition process in the same equipment. For a gate oxide thin film, the pre-cleaned silicon wafer directly enters the deposition work area to complete the deposition of the high-K gate oxide in a short time, which can maximize the avoidance of the formation of a natural oxide layer on the surface of the silicon wafer, thereby improving the quality of the deposited high-K gate oxide thin film and being conducive to improving the performance of the device.

[0073] In the description of the application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only used for the purpose of facilitating the description of the application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the application.

[0074] In addition, the terms "first", "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0075] In this application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected or can communicate with each other; it can be directly connected, or it can be indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.

[0076] Although the preferred embodiments of the application have been described, those skilled in the art can make further changes and modifications to the embodiments once they know the basic inventive concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the application.

[0077] Obviously, those skilled in the art can make various modifications and variations to the application without departing from the spirit and scope of the application. Thus, if these modifications and variations of the application fall within the scope of the claims of the application and their equivalent technologies, the application also intends to include these modifications and variations.

Claims

1. A semiconductor thin film deposition device, characterized in that: The interior of the equipment is divided into a normal pressure area and a vacuum area, which are separated and connected by a channel. The semiconductor thin film deposition equipment is also equipped with: The pre-cleaning work area is arranged in the normal pressure area; the pre-cleaning work area is provided with a pre-cleaning device for pre-cleaning the silicon wafer; The deposition working area is arranged in the vacuum area; the deposition working area is provided with a deposition device for depositing a thin film layer on the surface of the silicon wafer; A first wafer transport device is provided in the connecting passage and is used to transport the pre-cleaned silicon wafer to the vacuum area; The vacuum pumping device is used to evacuate the vacuum area to keep the vacuum area in a vacuum environment.

2. The semiconductor thin film deposition equipment according to claim 1, characterized in that: Also includes: The second wafer transport device is arranged in the normal pressure area, and is used to transport the silicon wafers entering the normal pressure area into the pre-cleaning work area, and to transport the pre-cleaned silicon wafers into the first wafer transport device.

3. The semiconductor thin film deposition equipment according to claim 1, wherein: Also includes: The third wafer transport device is disposed in the vacuum zone and is used to transport the silicon wafer entering the vacuum zone from the first wafer transport device into the deposition work area.

4. The semiconductor thin film deposition equipment according to claim 1, wherein: The semiconductor thin film deposition equipment also features: The transition zone is arranged between the normal pressure zone and the vacuum zone, and is adjacent to and separated from the normal pressure zone and the vacuum zone respectively; the first wafer transport device extends from the transition zone to the vacuum zone; the vacuum pumping device is also used to vacuum the transition zone so that the transition zone is transformed from a normal pressure environment to a vacuum environment.

5. The semiconductor thin film deposition equipment according to claim 4, characterized in that: The first wafer transport device includes: Support frame; A conveying mechanism is provided on the support frame, the conveying mechanism extends in a direction from the transition area to the vacuum area and moves relative to the support frame; A support frame for supporting silicon wafers, which is arranged on the conveying mechanism and can move synchronously with the conveying mechanism; The driving mechanism is connected to the transmission mechanism and is used to provide driving force to the transmission mechanism.

6. The semiconductor thin film deposition equipment according to claim 2, characterized in that: There are two pre-cleaning work areas, which are respectively arranged on both sides of the normal pressure area; and the second wafer conveying device is located between the two pre-cleaning work areas.

7. The semiconductor thin film deposition equipment according to claim 3, characterized in that: There are two deposition working areas, which are respectively arranged on both sides of the vacuum area; and the third wafer transport device is located between the two deposition working areas.

8. The semiconductor thin film deposition equipment according to claim 1, wherein: Also includes: Nitrogen purge device is used to supply nitrogen to the normal pressure area.

9. The semiconductor thin film deposition equipment according to claim 1, characterized in that: Also includes: The wafer loading device is arranged at the entrance of the normal pressure zone and is used to deliver silicon wafers into the normal pressure zone.

10. The semiconductor thin film deposition equipment according to claim 4, characterized in that: The first wafer transport device is sealed in the connecting channel, and an entrance and an exit as well as a sealing door are arranged at the end of the connecting channel facing the transition zone and the vacuum zone.

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