Coating apparatus compatible with full area and sub-area

Abstract

The application provides a coating equipment compatible with whole area and subarea, comprising: a gas distribution disc comprising a first functional area and a second functional area isolated from each other; a gas distribution mechanism comprising a base and a rotating part, the rotating part being rotatably arranged on the base; the base having a first gas outlet, a second gas outlet and a first gas inlet distributed in a circumference, wherein the first gas outlet is communicated with the first functional area, and the second gas outlet is communicated with the second functional area; the rotating part having a first communication channel, a second communication channel, a third communication channel and a second gas inlet; the first communication channel and the second communication channel being arranged at the same circumferential position of the first gas outlet, the second gas outlet and the first gas inlet; one end of the third communication channel being communicated with the first communication channel, and the other end being communicated with the second gas inlet; the rotating part being used for distributing the gas from the first gas inlet and the second gas inlet to the first gas outlet and the second gas outlet by rotating relative to the base.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a coating equipment compatible with both whole-area and partitioned coating. Background Technology

[0002] During semiconductor manufacturing, wafer warpage can occur due to internal stress imbalances in the material or mismatches in the thermal expansion coefficients of different materials. Wafer warpage directly leads to adverse results in subsequent process steps.

[0003] In existing technologies, back-side coating is used to address wafer warpage. Wafer warpage includes overall downward bending, overall upward bending, saddle-shaped warpage, and irregular shapes. For different warpage shapes, it may be necessary to apply different gases to the entire wafer or specific sections to achieve targeted coating, thereby changing the stress at the coating location and improving the wafer warpage problem.

[0004] However, using whole-area and zone-based solutions to address various warping issues often involves two different types of equipment or requires replacing a large number of internal parts and gas holder designs, resulting in complex processes and incompatibility. Summary of the Invention

[0005] The purpose of this invention is to provide a coating device that is compatible with both whole-area and partitioned coating devices, so as to solve the problem of incompatibility between whole-area and partitioned coating devices in the prior art.

[0006] To solve the above-mentioned technical problems, the present invention provides a coating device compatible with both whole-area and partitioned coatings, comprising:

[0007] The gas distribution plate includes a first functional area and a second functional area that are isolated from each other.

[0008] A gas distribution mechanism includes a base and a rotating part, the rotating part being rotatably mounted on the base; the base has a first air outlet, a second air outlet, and a first air inlet distributed circumferentially, wherein the first air outlet communicates with a first functional area, and the second air outlet communicates with a second functional area; the rotating part has a first connecting channel, a second connecting channel, a third connecting channel, and a second air inlet; the first connecting channel and the second connecting channel are located at the same circumferential position as the first air outlet, the second air outlet, and the first air inlet; one end of the third connecting channel communicates with the first connecting channel, and the other end communicates with the second air inlet;

[0009] The rotating part is used to adjust the communication relationship between the first connecting channel and the first air outlet and the second air outlet by rotating relative to the base, and to adjust the communication relationship between the second connecting channel and the first air outlet, the second air outlet and the first air inlet, thereby distributing gas from the first air inlet and the second air inlet to the first air outlet and the second air outlet.

[0010] Optionally, the central angle formed between the first air outlet and the second air outlet along the circumferential direction of the base is the first circumferential angle; the central angle formed between the first air outlet and the first air inlet along the circumferential direction of the base through the second air outlet is the second circumferential angle; the second circumferential angle is greater than the first circumferential angle.

[0011] The circumferential angle of the circumferential extension range of the first connecting channel is not less than the first circumferential angle, and the circumferential angle of the circumferential extension range of the second connecting channel is not less than the second circumferential angle.

[0012] Optionally, the first air outlet, the second air outlet, and the first air inlet are arranged sequentially in the circumferential direction of the base, with the first circumferential angle being 90° and the second circumferential angle being 180°.

[0013] Optionally, the circumferential angle of the circumferential extension range of the first connecting channel is equal to the first circumferential angle, and the circumferential angle of the circumferential extension range of the second connecting channel is equal to the second circumferential angle.

[0014] Optionally, the circumferential angles of the circumferential extension ranges at the two ends of the first connecting channel and the second connecting channel are the same.

[0015] Optionally, when the rotating part rotates to the first position, the second connecting channel is simultaneously connected to the first air inlet and the second air outlet, and the first connecting channel is connected to the first air outlet;

[0016] When the rotating part rotates to the second position, the second connecting channel is simultaneously connected to the first air inlet, the first air outlet and the second air outlet;

[0017] When the rotating part rotates to the third position, the first connecting channel is simultaneously connected to the first air outlet and the second air outlet; the second connecting channel is connected to the first air inlet.

[0018] When the rotating part rotates to the fourth position, the first connecting channel is connected to the second air outlet; the second connecting channel is simultaneously connected to the first air inlet and the first air outlet.

[0019] Optionally, there are two of each of the first and second functional areas, which are arranged sequentially along the circumference of the gas distribution disk; the first and second functional areas are fan-shaped areas with the same radius.

[0020] Optionally, the base has an end face, and the openings of the first air inlet, the first air outlet, and the second air outlet are all formed on the end face;

[0021] The rotating part includes a cover, and the first connecting channel, the second connecting channel and the third connecting channel are opened inside the cover; the cover is sealed to the end face.

[0022] Optionally, the cover is made of a transparent material; and / or, the rotating part includes a toothed disc connected axially to the cover, the toothed disc being used for coupling with a power mechanism.

[0023] Optionally, the rotating part includes a rotor coaxially connected to the cover, the rotor being rotatably housed within the base, and the end of the rotor away from the cover forming a buffer cavity with the base, the base having an air passage connection end communicating with the buffer cavity; a channel is provided inside the rotor, and the second air inlet is connected to the buffer cavity through the channel.

[0024] Optionally, the coating equipment compatible with both whole-area and partition coatings further includes:

[0025] A wafer tray, disposed above the gas distribution tray, is used to support the wafer;

[0026] An upper heater having multiple holes for discharging inert gas into the wafer; wherein the upper heater is positioned above and spaced apart from the wafer tray, such that the distance between the upper heater and the wafer is maintained between 1 mm and 3 mm.

[0027] Optionally, the coating equipment compatible with both whole-area and partition coating further includes at least two air extraction ports; the at least two air extraction ports are evenly arranged circumferentially along the gas distribution disk.

[0028] In summary, the coating equipment compatible with both whole-area and partitioned coatings provided by the present invention includes: a gas distribution plate comprising a first functional area and a second functional area isolated from each other; a gas distribution mechanism comprising a base and a rotating part, the rotating part being rotatably disposed on the base; the base having a first gas outlet, a second gas outlet, and a first gas inlet circumferentially distributed, wherein the first gas outlet communicates with the first functional area, and the second gas outlet communicates with the second functional area; the rotating part having a first connecting channel, a second connecting channel, a third connecting channel, and a second gas inlet; the first connecting channel and the second connecting channel communicate with the second functional area. The channel is located on the same circumferential position as the first air outlet, the second air outlet, and the first air inlet; one end of the third connecting channel is connected to the first connecting channel, and the other end is connected to the second air inlet; the rotating part is used to adjust the connection relationship between the first connecting channel and the first air outlet and the second air outlet, and to adjust the connection relationship between the second connecting channel and the first air outlet, the second air outlet, and the first air inlet by rotating relative to the base, thereby distributing the gas from the first air inlet and the second air inlet to the first air outlet and the second air outlet.

[0029] With this configuration, different gases from the first and second inlets can be distributed to the first and second outlets as needed through the gas distribution mechanism. This allows the first and second functional areas of the gas distribution plate to be configured with gases according to the different warp shapes of the wafer for coating. Furthermore, based on the structure of the gas distribution mechanism, during the switching of gas distribution, there is no possibility of two different gases being mixed into a single outlet simultaneously, effectively reducing the switching risk. Attached Figure Description

[0030] Those skilled in the art will understand that the accompanying drawings are provided to better understand the invention and do not constitute any limitation on the scope of the invention.

[0031] Figure 1 This is a cross-sectional schematic diagram of a coating device compatible with both whole-area and partition coating according to an embodiment of the present invention.

[0032] Figure 2 This is a cross-sectional view of the coating equipment compatible with both whole-area and partitioned coating according to an embodiment of the present invention.

[0033] Figure 3 This is a schematic diagram of a coating device compatible with both whole-area and partition coating according to an embodiment of the present invention.

[0034] Figure 4 This is a perspective view of the gas distribution disk according to an embodiment of the present invention.

[0035] Figure 5This is a top view of the gas distribution disk according to an embodiment of the present invention.

[0036] Figure 6 yes Figure 5 BB cross-section of the gas distribution plate.

[0037] Figure 7 This is a perspective view of the gas distribution mechanism according to an embodiment of the present invention.

[0038] Figure 8 This is a top view of the gas distribution mechanism according to an embodiment of the present invention.

[0039] Figure 9 yes Figure 8 CC cross-sectional view of the gas distribution mechanism.

[0040] Figure 10 This is a perspective view of the base according to an embodiment of the present invention.

[0041] Figure 11 This is a perspective view of a gas distribution mechanism according to an embodiment of the present invention, wherein the rotating part is located in a first position.

[0042] Figure 12 This is a perspective view of the gas distribution mechanism according to an embodiment of the present invention, wherein the rotating part is located in the second position.

[0043] Figure 13 This is a perspective view of the gas distribution mechanism according to an embodiment of the present invention, wherein the rotating part is located in the third position.

[0044] Figure 14 This is a perspective view of the gas distribution mechanism according to an embodiment of the present invention, wherein the rotating part is located in the fourth position.

[0045] In the attached diagram: 01-Cavity; 011-Upper heater; 012-Wafer tray; 013-Lower heater; 014-Lifting mechanism; 015-RF connection port; 016-Exhaust port; 017-Upper inert gas port; 018-Inert gas buffer zone; 1-Gas distribution plate; 10X-First functional area; 10Y-Second functional area; 11-Gas inlet; 12-First connection port; 13-Second connection port; 2-Gas distribution mechanism ; 3-Base; 30-End face; 31-First air outlet; 32-Second air outlet; 33-First air inlet; 34-Second air inlet; 31A, 32A, 33A, 34A-Air passage connection end; 35-Buffer chamber; 4-Rotating part; 41-First connecting channel; 42-Second connecting channel; 43-Third connecting channel; 44-Cap; 45-Gear disc; 46-Rotor; 47-Lip seal; 48-Rolling bearing; 49-Magnetofluid. Detailed Implementation

[0046] To make the objectives, advantages, and features of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the explanation of the embodiments of this invention. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and may sometimes use different scales.

[0047] As used in this invention, the singular forms “a,” “an,” “one,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the term “at least two” is generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature; “one end” and “the other end,” and “proximal end” and “distal end” generally refer to two corresponding parts, which include not only endpoints. Furthermore, the terms "installed," "connected," and "attached," as used in this invention, and the term "set" on one element from another, should be interpreted broadly. They generally only indicate a connection, coupling, cooperation, or transmission relationship between the two elements, which can be direct or indirect through an intermediate element. They should not be construed as indicating or implying a spatial relationship between the two elements, meaning one element can be located inside, outside, above, below, or to one side of another element, unless otherwise explicitly stated. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances. Additionally, directional terms such as above, below, up, down, upward, downward, left, and right are used relative to exemplary embodiments as shown in the figures, with upward or upper directions pointing towards the top of the corresponding figure, and downward or lower directions pointing towards the bottom of the corresponding figure.

[0048] The purpose of this invention is to provide a coating apparatus compatible with both whole-area and partitioned coating methods, thereby solving the problem of incompatibility between whole-area and partitioned coating apparatuses in the prior art. The following description refers to the accompanying drawings.

[0049] Please refer to Figure 1 and Figure 2The diagram illustrates a coating apparatus comprising a chamber 01. Within the chamber 01, from top to bottom, are arranged components including an upper heater 011, a wafer tray 012, a gas distribution plate 1, and a lower heater 013. The wafer tray 012 is positioned above the gas distribution plate 1 to support the back side of the wafer. Optionally, the wafer tray 012, gas distribution plate 1, and lower heater 013 are fixedly connected together and their vertical positions are adjusted via a lifting mechanism 014. Optionally, an radio frequency connection port 015 is also provided at the top of the chamber 01.

[0050] Gas distribution disk 1 is used to introduce gas that can generate a thin film of tensile or compressive stress, which acts on the wafer supported on wafer tray 012. Figure 1 and Figure 2 The back side (not shown). For example, in an alternative example, introducing NH3 increases the nitrogen content in the thin film, resulting in tighter atomic bonds. At the same time, the RF power supply is connected to the RF connector 015, emitting high-frequency RF, such as 27.12MHz, causing compressive stress on the thin film on the back side of the wafer. If SiH4 is introduced, the hydrogen content in the thin film increases, the thin film structure tends to be porous, and the RF power supply simultaneously emits high-frequency RF (such as 27.12MHz) and low-frequency RF (such as 400kHz), causing tensile stress on the thin film on the back side of the wafer.

[0051] Optionally, an upper heater 011 is spaced above the wafer tray 012; the upper heater 011 has multiple holes for discharging inert gas to the front side of the wafer. The upper heater 011 is positioned above and spaced apart from the wafer tray 012, so that the distance between the upper heater 011 and the wafer is maintained between 1mm and 3mm. For example, in an alternative example, during the process, the inert gas first enters the inert gas buffer zone 018 from the upper inert gas port 017, and then diffuses evenly from the center area to the surrounding area through the multiple holes on the upper heater 011. The wafer is supported on the wafer tray 012, and then moved upward by the lifting mechanism 014 until the distance between the wafer and the upper heater 011 is 1mm to 3mm, ensuring that the inert gas discharged from the holes of the upper heater 011 covers the entire front side of the wafer, preventing the process reaction gas on the back side from reacting with the front side, forming an air curtain isolation effect. If the distance between the wafer and the upper heater 011 is too large, the pressure exerted on the wafer by the inert gas vented from the holes of the upper heater 011 may be less than the pressure exerted on the wafer by the gas below, causing the gas below the wafer to overflow to the top of the wafer. If the distance between the wafer and the upper heater 011 is too small, it may cause wafer damage during wafer handling.

[0052] Furthermore, the coating equipment also includes at least two exhaust ports 016; the at least two exhaust ports 016 are disposed on the periphery of the gas distribution disk 1 and are evenly arranged along the circumference of the gas distribution disk 1. To improve the uniformity of airflow within the chamber 01 during the coating process, at least two exhaust ports 016 are provided to ensure that there is no turbulence inside the chamber 01, achieving an ideal coating environment. If only one eccentric exhaust port 016 is provided, turbulence may occur at the corner on the other side. Optionally, two exhaust ports 016 are provided, disposed on the periphery of the gas distribution disk 1 and symmetrically arranged relative to the gas distribution disk 1, to reduce or avoid turbulence inside the chamber 01 and achieve an ideal coating environment. Optionally, during the process, chamber 01 is preferably filled with hot water at 75°C to 80°C for heat preservation, and the temperature of the upper heater 011 is set at 550°C. To ensure the uniformity of the coating on the back side of the wafer, the upper heater 011 can be a dual-zone heater including an inner zone and an outer zone. The lower heater 013 can be heated to 400°C to provide sufficient kinetic energy for the chemical reaction of the process gas on the back side of the wafer.

[0053] The inventors discovered that for warped sheets with integral downward or upward curves, a gas capable of generating a single stress film needs to be introduced in one pass. However, for saddle-shaped and irregular shapes, different gases need to be introduced in separate sections to achieve targeted coating. However, due to the relatively closed structure of chamber 01, it is often difficult to reconcile the gas supply for both the entire area and different sections by simply changing the gas distribution plate 1. Furthermore, during the switching of distribution gases, it is crucial to prevent mixing and chemical reactions between different gases. This presents a greater challenge to achieving compatibility between the entire area and different sections.

[0054] Based on the above research, please refer to Figures 1 to 14 This invention provides a coating device compatible with both whole-area and partitioned coatings, comprising a gas distribution disk 1 and a gas distribution mechanism 2; the shape and size of the gas distribution disk 1 correspond to the shape and size of the wafer, and the gas distribution disk 1 includes a first functional area 10X and a second functional area 10Y that are isolated from each other; the gas distribution mechanism 2 includes a base 3 and a rotating part 4, the rotating part 4 being rotatably disposed on the base 3, and preferably rotating about the axis A of the base 3.

[0055] The base 3 has a first air outlet 31, a second air outlet 32, and a first air inlet 33 distributed circumferentially; wherein, the first air outlet 31 is connected to the first functional area 10X, and the second air outlet 32 ​​is connected to the second functional area 10Y; the rotating part 4 has a first connecting channel 41, a second connecting channel 42, a third connecting channel 43, and a second air inlet 34; the first connecting channel 41 and the second connecting channel 42 are located at the same circumferential position as the first air outlet 31, the second air outlet 32, and the first air inlet 33; one end of the third connecting channel 43 is connected to the first connecting channel 41, and the other end is connected to the second air inlet 34;

[0056] The rotating part 4 is used to adjust the communication relationship between the first connecting channel 41 and the first air outlet 31 and the second air outlet 32 ​​by rotating relative to the base 3, and to adjust the communication relationship between the second connecting channel 42 and the first air outlet 31, the second air outlet 32 ​​and the first air inlet 33, thereby distributing the gas from the first air inlet 33 and the second air inlet 34 to the first air outlet 31 and the second air outlet 32.

[0057] Optionally, the central angle formed between the first air outlet 31 and the second air outlet 32 ​​along the circumferential direction of the base 3 is the first circumferential angle; the central angle formed between the first air outlet 31 and the first air inlet 33 along the circumferential direction of the base 3 through the second air outlet 32 ​​is the second circumferential angle; the second circumferential angle is larger than the first circumferential angle. The circumferential angles are explained here. Please refer to the reference. Figure 7 and Figure 8 With axis A as the center, the first air outlet 31, the second air outlet 32 ​​and the first air inlet 33 are preferably located on the same circumference, and the angle of the arc formed by any two of them on the circumference is the circumferential angle of the two.

[0058] The circumferential angle of the first connecting channel 41 is not less than the first circumferential angle, and the circumferential angle of the second connecting channel 42 is not less than the second circumferential angle. It should be noted that the shapes of the first connecting channel 41 and the second connecting channel 42 are not particularly limited. Their location on the same circumferential position as the first air outlet 31, the second air outlet 32, and the first air inlet 33 means that they can at least cover the circumference of the first air outlet 31, the second air outlet 32, and the first air inlet 33. This allows them to align with and cover the first air outlet 31, the second air outlet 32, or the first air inlet 33 when rotating with the rotating part 4, thereby achieving communication between different air inlets and outlets. Furthermore, the circumferential angle of the first connecting channel 41 and the second connecting channel 42 refers to the angle of the arc corresponding to the maximum extension range of the first connecting channel 41 and the second connecting channel 42 in the circumferential direction of the circumference of the first air outlet 31, the second air outlet 32, and the first air inlet 33, with axis A as the center.

[0059] The rotating part 4 is used to distribute gas from the first air inlet 33 and the second air inlet 34 to the first air outlet 31 and the second air outlet 32 ​​by rotating about the axis A. It can be understood that as the rotating part 4 rotates, the first connecting channel 41, the second connecting channel 42, and the third connecting channel 43 also rotate. The first connecting channel 41 and the second connecting channel 42 can cover different air inlets or outlets, while one end of the third connecting channel 43 is always connected to the second air inlet 34. This achieves the distribution and combination of multiple gases to meet the needs of overall or zoned gas supply.

[0060] Based on the above configuration, the gas distribution disk 1 includes a first functional area 10X and a second functional area 10Y, enabling it to supply different gases. Then, through the distribution mechanism 2, different gases from the first inlet 33 and the second inlet 34 can be respectively sent to the first outlet 31 and the second outlet 32 ​​as needed, so that the first functional area 10X and the second functional area 10Y of the gas distribution disk 1 are configured with gases according to the different warp shapes of the wafer for coating. Furthermore, based on the structure of the gas distribution mechanism 2, during the process of switching the distributed gases, there is no possibility of two different gases being mixed into a single outlet simultaneously, effectively reducing the switching risk.

[0061] The inventors discovered that the number of first functional regions 10X and second functional regions 10Y is closely related to the types of wafer warpage shapes that can be adapted in practical applications. The gas distribution disk 1 should include at least one first functional region 10X and one second functional region 10Y. The first functional region 10X and the second functional region 10Y are preferably divided in half, thus accommodating at least some types of warpage shapes (such as half-press and half-pull) and overall warpage (overall pressing or overall pulling). To increase the adaptability, the gas distribution disk 1 can include a greater number of first functional regions 10X and second functional regions 10Y, for example, a total of 3 to 8. Since the wafer itself can be rotated and arranged on the wafer tray 012, considering the structural complexity of the gas distribution and gas distribution mechanism 2, the total number of first functional regions 10X and second functional regions 10Y should not be too high, preferably 3 to 5, and more preferably 4. Preferably, there are two first functional regions 10X and two second functional regions 10Y. The first functional regions 10X and the second functional regions 10Y are arranged sequentially along the circumference of the gas distribution disk 1. The first functional regions 10X and the second functional regions 10Y are fan-shaped regions with the same radius. The overall shape of the gas distribution disk 1 can be adapted to the shape of the wafer.

[0062] For example, when there are a total of 3 functional areas, there could be 1 first functional area 10X and 2 second functional areas 10Y. As another example, when there are a total of 4 functional areas, the number of first functional areas 10X and second functional areas 10Y could both be 2, or it could be 3 to 1 (e.g., 3 first functional areas 10X and 1 second functional area 10Y). Furthermore, when there are 5 functional areas, the correspondence between the number of first functional areas 10X and second functional areas 10Y could be 4 to 1 or 3 to 2. The circumferential arrangement of the functional areas connecting different air outlets can also be configured according to actual needs.

[0063] Please refer to Figures 3 to 6In a preferred embodiment, two first functional regions 10X and two second functional regions 10Y are evenly divided circumferentially on the gas distribution plate 1, with each functional region occupying a 90° circumferential angle. Each functional region has multiple air delivery holes 11 on the surface of the gas distribution plate 1, preferably evenly distributed to improve the uniformity of air delivery. Adjacent functional regions are preferably separated by partition walls to prevent gas mixing. All air delivery holes 11 of the two first functional regions 10X are interconnected and converge at a first connection port 12, which connects to the first outlet 31 of the gas distribution mechanism 2. All air delivery holes 11 of the two second functional regions 10Y are interconnected and converge at a second connection port 13, which connects to the second outlet 32 ​​of the gas distribution mechanism 2. It should be noted that the gas distribution plate 1 shown here, comprising two first functional regions 10X and two second functional regions 10Y, is merely an example and not a limitation thereof. Those skilled in the art can construct different gas distribution disks 1 based on the above description.

[0064] Based on the above configuration, the gas distribution plate 1 includes two connection ports: a first connection port 12 and a second connection port 13. These two connection ports can be used to distribute the same gas or different gases. To meet this requirement, the gas distribution mechanism 2 includes two air inlets and two air outlets, and should be able to meet the requirement of one air inlet corresponding to one or two air outlets. Preferably, the first air inlet 33 and the second air inlet 34 can be connected to different gas supply terminals of a gas holder (not shown), and the gas supply to different gas supply terminals can be turned on or off based on the control of the gas holder.

[0065] Please refer to Figures 7 to 14 In a preferred embodiment, the first air outlet 31, the second air outlet 32, and the first air inlet 33 are arranged sequentially in the circumferential direction of the base 3, with the first circumferential angle being 90° and the second circumferential angle being 180°. Corresponding to this arrangement of air inlets and outlets, the circumferential angles of the circumferential extension ranges of the spaced portions at both ends of the first connecting channel 41 and the second connecting channel 42 are preferably the same. The circumferential angle of the circumferential extension range of the first connecting channel 41 is equal to the first circumferential angle, and the circumferential angle of the circumferential extension range of the second connecting channel 42 is equal to the second circumferential angle. That is, the circumferential angle of the circumferential extension range of the first connecting channel 41 is 90°, and the circumferential angle of the circumferential extension range of the second connecting channel 42 is 180°. The circumferential angles of the axial extension ranges of the spaced portions at both ends of the first connecting channel 41 and the second connecting channel 42 are both 45°.

[0066] Both the first connecting channel 41 and the second connecting channel 42 have a certain circumferential extension range on the same circumference, and there are two intervals between the two connecting channels on this circumference. By configuring the circumferential extension range of the two intervals between the two connecting channels to be the same, the first connecting channel 41 and the second connecting channel 42 can be evenly distributed on the circumference, which facilitates the distribution of different inlet and outlet air when the rotating part 4 rotates.

[0067] A more detailed allocation is shown in the following example:

[0068] refer to Figure 11 As shown, when the rotating part 4 rotates to the first position, the second connecting channel 42 is simultaneously aligned with the first air inlet 33 and the second air outlet 32, and the first connecting channel 41 is aligned with the first air outlet 31.

[0069] like Figure 12 As shown, when the rotating part 4 rotates to the second position, the second connecting channel 42 is simultaneously aligned with the first air inlet 33, the first air outlet 31 and the second air outlet 32.

[0070] like Figure 13 As shown, when the rotating part 4 rotates to the third position, the first connecting channel 41 is simultaneously aligned with the first air outlet 31 and the second air outlet 32; the second connecting channel 42 is aligned with the first air inlet 33.

[0071] like Figure 14 As shown, when the rotating part 4 rotates to the fourth position, the first connecting channel 41 is aligned with the second air outlet 32; the second connecting channel 42 is simultaneously aligned with the first air inlet 33 and the first air outlet 31.

[0072] Since one end of the third connecting channel 43 is connected to the first connecting channel 41 and the other end extends to axis A and is always aligned with the second air inlet 34, it is understandable that no matter what position the rotating part 4 rotates to, the first connecting channel 41 is always connected to the second air inlet 34.

[0073] For example, the region on the wafer corresponding to the first functional region 10X is called region X, and the region corresponding to the second functional region 10Y is called region Y. The gas flowing into the first inlet 33 is a gas capable of generating a tensile stress film, and the gas flowing into the second inlet 34 is a gas capable of generating a compressive stress film. Based on the above allocation, the following requirements can be met:

[0074] ① When the wafer is bent downwards (smiley face shape), the gas supply end of the gas holder corresponding to the second gas inlet 34 is opened for gas supply, while the gas supply end corresponding to the first gas inlet 33 is not limited. The rotating part 4 is in the third position (see...). Figure 13As shown), the second air inlet 34 simultaneously supplies air to both the first air outlet 31 and the second air outlet 32. The entire X and Y regions on the back side of the wafer are vented with gas that generates a compressive stress film. The first air inlet 33 is not connected to any air outlet.

[0075] ② When the wafer is curved as a whole (crying face shape), the gas supply end of the gas holder corresponding to the first gas inlet 33 is opened for gas supply, while the gas supply end corresponding to the second gas inlet 34 is not limited. The rotating part 4 is in the second position (see...). Figure 12 As shown), the first air inlet 33 simultaneously supplies gas to both the first air outlet 31 and the second air outlet 32. The entire X and Y regions on the back side of the wafer are vented with gas that generates a tensile stress film. The second air inlet 34 is not connected to any air outlet.

[0076] ③ When the wafer requires tensile stress in region X and compressive stress in region Y, both gas supply terminals of the gas holder are opened simultaneously. Rotating part 4 is in the fourth position (see...). Figure 14 As shown), the first air inlet 33 receives gas, the first air outlet 31 discharges gas, and the gas introduced into the X region on the back side of the wafer is the gas that generates a tensile stress film; the second air inlet 34 receives gas, the second air outlet 32 ​​discharges gas, and the gas introduced into the Y region on the back side of the wafer is the gas that generates a compressive stress film.

[0077] ④ When the wafer requires tensile stress in region X but not stress adjustment in region Y, the gas holder only opens the gas supply to the gas supply end corresponding to the first gas inlet 33, and closes the gas supply to the gas supply end corresponding to the second gas inlet 34. The rotating part 4 is in the fourth position (see...). Figure 14 As shown), air enters through the first air inlet 33 and exits through the first air outlet 31. The gas introduced into the X region on the back side of the wafer is the gas that generates a tensile stress film. However, there is no gas supply through the second air inlet 34, and no gas is discharged through the second air outlet 32 ​​connected to the second air inlet 34. Therefore, no gas is sent out from the Y region on the back side of the wafer.

[0078] ⑤ When the wafer requires compressive stress in region X and tensile stress in region Y, both gas supply terminals of the gas holder are opened simultaneously. Rotating part 4 is in the first position (see...). Figure 11 As shown), the first air inlet 33 receives gas, the second air outlet 32 ​​receives gas, and the gas introduced into the Y region on the back side of the wafer is the gas that generates a tensile stress film; the second air inlet 34 receives gas, the first air outlet 31 receives gas, and the gas introduced into the X region on the back side of the wafer is the gas that generates a compressive stress film.

[0079] ⑥ When the wafer requires compressive stress in region X but not in region Y, the gas holder only opens the gas supply to the gas supply end corresponding to the second gas inlet 34, and closes the gas supply to the gas supply end corresponding to the first gas inlet 33. The rotating part 4 is in the first position (see...). Figure 11As shown), air is introduced through the second air inlet 34 and discharged through the first air outlet 31. The gas introduced into the X region on the back side of the wafer is the gas that generates a compressive stress film, while there is no gas supply through the first air inlet 33. Therefore, no gas is discharged from the Y region on the back side of the wafer.

[0080] ⑦ When the wafer does not require stress adjustment in region X and requires tensile stress in region Y, the gas supply to the gas holder is only opened at the gas supply end corresponding to the first gas inlet 33, and the gas supply to the gas supply end corresponding to the second gas inlet 34 is closed. The rotating part 4 is in the first position (see...). Figure 11 As shown), air enters through the first air inlet 33 and exits through the second air outlet 32. The gas introduced into the Y region on the back side of the wafer is the gas that generates a tensile stress film, while there is no gas supply through the second air inlet 34. Therefore, no gas is sent out from the X region on the back side of the wafer.

[0081] ⑧ When the wafer requires no stress adjustment in region X and compressive stress in region Y, the gas holder only opens the gas supply to the gas supply end corresponding to the second gas inlet 34, and closes the gas supply to the gas supply end corresponding to the first gas inlet 33. The rotating part 4 is in the fourth position (see...). Figure 14 As shown), air is introduced through the second air inlet 34 and discharged through the second air outlet 32. The gas introduced into the Y region on the back side of the wafer is the gas that generates a compressive stress film, while there is no gas supply through the first air inlet 33. Therefore, no gas is discharged from the X region on the back side of the wafer.

[0082] In summary, based on the different rotation positions of the rotating part 4 and the gas supply from the gas holder, the requirements for two different states of the entire wafer area and six different states of partitioned areas can be met. Furthermore, by slightly adjusting the rotation angle, the size of the shielding holes for different air inlets or outlets and connecting channels can be adjusted, and the gas flow rate can also be moderately regulated. It should be noted that when rotating the rotating part 4 to connect different connecting channels with different air inlets or outlets, the airtightness of the connection points must be ensured. For example, by using sealing rubber, gas leakage can be avoided without affecting the basic functions.

[0083] Please refer to Figure 10Preferably, the base 3 has an end face 30, and the openings of the first air inlet 33, the first air outlet 31, and the second air outlet 32 ​​are all formed on the end face 30; the rotating part 4 includes a cover 44, and the first connecting channel 41, the second connecting channel 42, and the third connecting channel 43 are formed inside the cover 44; the cover 44 is sealed to the end face 30. The first air inlet 33, the first air outlet 31, and the second air outlet 32 ​​extend from the openings to different positions on the base 3, forming their respective air passage connection ends 33A, 31A, and 32A (such as quick-connect ports), which are used to connect their respective air passages. In an alternative example, the first air inlet 33, the first air outlet 31, and the second air outlet 32 ​​extend radially outward in the base 3 from the openings on the end face 30, forming three radial air passage connection ends 33A, 31A, and 32A. One end of the second air inlet 34 is connected to the third connecting channel 43, and the other end extends along the axial direction of the rotating part 4, forming an air passage connection end 34A at the end of the base 3 away from the end face 30. The second air inlet 34 is preferably opened along the axis A.

[0084] The end face 30 and the cover 44 form a planar dynamic sealing surface, facilitating sealing. Preferably, several sealing rings are provided between the end face 30 and the cover 44 to further improve sealing performance. In an optional embodiment, the cover 44 is made of a transparent material to facilitate observation of the position of the rotating part 4, allowing for a direct understanding of the current connection between the air inlet and outlet, and the state of gas distribution. Of course, in other embodiments, the openings of the first air inlet 33, the first air outlet 31, and the second air outlet 32 ​​are not limited to being arranged on the end face 30. For example, the openings of the first air inlet 33, the first air outlet 31, and the second air outlet 32 ​​can also be arranged radially on the same circumferential surface, and the cover 44 forms a dynamic seal with this circumferential surface, achieving a similar effect.

[0085] Optionally, the rotating part 4 includes a geared disc 45 connected axially to the cover 44, the geared disc 45 being coupled to a power mechanism. The power mechanism can be an external electric or pneumatic mechanism that can provide rotational power and form a power coupling with the geared disc 45 through a transmission mechanism such as a gear set or synchronous belt, thereby driving the geared disc 45 to rotate as needed, thus driving the entire rotating part 4 to rotate to the target position.

[0086] Optionally, the rotating part 4 includes a rotor 46 coaxially connected to the cover 44. The rotor 46 is rotatably housed within the base 3, and one end of the rotor 46 away from the cover 44 forms a buffer cavity 35 with the base 3. The base 3 has a gas connection end 34A communicating with the buffer cavity 35. A channel is provided inside the rotor 46, through which the second air inlet 34 communicates with the buffer cavity 35 and subsequently with the gas connection end 34A. The buffer cavity 35 is used to buffer the gas, and the gas connection end 34A is used to connect to the gas holder. With this configuration, when the rotating part 4 rotates, the gas connection end 34A of the second air inlet 34 does not need to rotate accordingly, preventing damage to the pipeline of the gas connection end 34A and improving the stability of the equipment.

[0087] Optionally, the rotor 46 is dynamically sealed to the base 3 via a lip seal 47, a rolling bearing 48, and a magnetofluid 49.

[0088] In some embodiments, the base 3 has a cylindrical inner cavity whose dimensions are approximately matched with the outer diameter of the rotor 46. The outer peripheral wall of the rotor 46 forms a dynamic seal with the inner wall of the base 3 through a lip seal 47, a rolling bearing 48, and a magnetofluid 49, so that the buffer cavity 35 is reliably isolated.

[0089] In summary, the coating equipment compatible with both whole-area and partitioned coatings provided by the present invention includes: a gas distribution plate comprising a first functional area and a second functional area isolated from each other; a gas distribution mechanism comprising a base and a rotating part, the rotating part being rotatably disposed on the base; the base having a first gas outlet, a second gas outlet, and a first gas inlet circumferentially distributed, wherein the first gas outlet communicates with the first functional area, and the second gas outlet communicates with the second functional area; the rotating part having a first connecting channel, a second connecting channel, a third connecting channel, and a second gas inlet; the first connecting channel and the second connecting channel communicate with the second functional area. The channel is located on the same circumferential position as the first air outlet, the second air outlet, and the first air inlet; one end of the third connecting channel is connected to the first connecting channel, and the other end is connected to the second air inlet; the rotating part is used to adjust the connection relationship between the first connecting channel and the first air outlet and the second air outlet, and to adjust the connection relationship between the second connecting channel and the first air outlet, the second air outlet, and the first air inlet by rotating relative to the base, thereby distributing the gas from the first air inlet and the second air inlet to the first air outlet and the second air outlet.

[0090] With this configuration, different gases from the first and second inlets can be distributed to the first and second outlets as needed through the gas distribution mechanism. This allows the first and second functional areas of the gas distribution plate to be configured with gases according to the different warp shapes of the wafer for coating. Furthermore, based on the structure of the gas distribution mechanism, during the switching of gas distribution, there is no possibility of two different gases being mixed into a single outlet simultaneously, effectively reducing the switching risk.

[0091] It should be noted that the above embodiments can be combined with each other. The above description is only a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the present invention.

Claims

1. A coating apparatus compatible with full-area and partial-area, characterized by, include: The gas distribution plate includes a first functional area and a second functional area that are isolated from each other. A gas distribution mechanism includes a base and a rotating part, the rotating part being rotatably mounted on the base; the base has a first air outlet, a second air outlet, and a first air inlet distributed circumferentially, wherein the first air outlet communicates with a first functional area, and the second air outlet communicates with a second functional area; the rotating part has a first connecting channel, a second connecting channel, a third connecting channel, and a second air inlet; the first connecting channel and the second connecting channel are located at the same circumferential position as the first air outlet, the second air outlet, and the first air inlet; one end of the third connecting channel communicates with the first connecting channel, and the other end communicates with the second air inlet; The rotating part is used to adjust the communication relationship between the first connecting channel and the first air outlet and the second air outlet by rotating relative to the base, and to adjust the communication relationship between the second connecting channel and the first air outlet, the second air outlet and the first air inlet, thereby distributing gas from the first air inlet and the second air inlet to the first air outlet and the second air outlet. The central angle formed between the first air outlet and the second air outlet along the circumferential direction of the base is the first circumferential angle; the central angle formed between the first air outlet and the first air inlet along the circumferential direction of the base through the second air outlet is the second circumferential angle; the second circumferential angle is greater than the first circumferential angle. The circumferential angle of the circumferential extension range of the first connecting channel is not less than the first circumferential angle, and the circumferential angle of the circumferential extension range of the second connecting channel is not less than the second circumferential angle. When the rotating part rotates to the first position, the second connecting channel is simultaneously connected to the first air inlet and the second air outlet, and the first connecting channel is connected to the first air outlet. When the rotating part rotates to the second position, the second connecting channel is simultaneously connected to the first air inlet, the first air outlet and the second air outlet; When the rotating part rotates to the third position, the first connecting channel is simultaneously connected to the first air outlet and the second air outlet; the second connecting channel is connected to the first air inlet. When the rotating part rotates to the fourth position, the first connecting channel is connected to the second air outlet; the second connecting channel is simultaneously connected to the first air inlet and the first air outlet.

2. The coating apparatus compatible with full-area and partial-area according to claim 1, wherein The first air outlet, the second air outlet, and the first air inlet are arranged sequentially in the circumferential direction of the base, with the first circumferential angle being 90° and the second circumferential angle being 180°.

3. The coating apparatus compatible with full-area and partial-area according to claim 1, wherein The circumferential angle of the circumferential extension range of the first connecting channel is equal to the first circumferential angle, and the circumferential angle of the circumferential extension range of the second connecting channel is equal to the second circumferential angle.

4. The coating apparatus compatible with full-area and partial-area according to claim 1, wherein The circumferential angles of the circumferential extension ranges at the two ends of the first connecting channel and the second connecting channel are the same.

5. The apparatus according to claim 1, wherein The number of the first functional area and the second functional area is two, and the first functional area and the second functional area are sequentially arranged along the circumference of the gas distribution plate; the first functional area and the second functional area are fan-shaped areas with the same radius.

6. The apparatus according to claim 1, wherein The base has an end face, and the openings of the first gas inlet, the first gas outlet and the second gas outlet are formed on the end face. The rotating part includes a cover, and the first communication channel, the second communication channel and the third communication channel are formed in the cover; the cover is sealingly connected to the end face.

7. The compatible whole zone and partial zone coating apparatus according to claim 6, wherein The cover is made of transparent material; and / or, the rotating part includes a gear disc connected to the cover in the axial direction, which is used to be coupled with a power mechanism.

8. The compatible whole zone and partial zone coating apparatus according to claim 6, wherein, The rotating part includes a rotor coaxially connected to the cover, the rotor is rotatably accommodated in the base, and one end of the rotor away from the cover forms a buffer cavity with the base, and the base has a gas path connection end communicating with the buffer cavity; the inside of the rotor is provided with a channel, and the second gas inlet is communicated with the buffer cavity through the channel.

9. The apparatus according to claim 1, wherein The film coating equipment compatible with the whole area and the sub-area further comprises: A wafer tray is arranged above the gas distribution plate and used for supporting a wafer; An upper heater has a plurality of holes for discharging inert gas to the wafer; wherein the position of the upper heater is configured to be arranged above and spaced from the wafer tray, so that the distance between the upper heater and the wafer is maintained between 1mm and 3mm.

10. The apparatus according to claim 1, wherein The film coating equipment compatible with the whole area and the sub-area further comprises at least two gas suction ports; the at least two gas suction ports are uniformly arranged along the circumference of the gas distribution plate.

Images