Voltage switching circuit, test method, test driver and voltage switching system

Abstract

The invention provides a voltage switching circuit, a test method, a test driver and a voltage switching system, and relates to the technical field of circuit design. Wherein the enabling pin of the DCDC converter is electrically connected with the first driving output end of the test driver, the switch node pin is electrically connected with one end of the first inductor, the other end of the first inductor is electrically connected with the output end of each voltage switching unit, and the output end of each voltage switching unit is electrically connected with the power supply end of a chip to be tested; one end of the first resistor is grounded, and the other end of the first resistor is electrically connected with a feedback pin of the DCDC converter and the input end of each voltage switching unit; and the control end of each voltage switching unit is electrically connected with each second driving output end of the test driver, so that voltage switching signals can be remotely output to the plurality of voltage switching units based on the test driver, the target voltage switching unit can quickly switch and output target power supply voltage, the switching efficiency is improved, and the test time is shortened. And the risk that personnel enter a radiation environment is reduced.

Description

Technical Field

[0001] The present application relates to the field of circuit design technology, and in particular to a voltage switching circuit, a test method, a test driver, and a voltage switching system. Background Art

[0002] Soft Error Rate (SER) testing is a method for measuring the internal data error rate of a chip under radiation conditions (for example, neutron radiation). Testing of the chip under test often includes three test modes: high voltage, low voltage, and normal voltage.

[0003] In the prior art, when testing the soft failure rate of a chip under test in multiple test modes under radiation conditions, testers often need to wait until the radiation dose drops to a safe value before entering the radiation room to manually switch the test mode.

[0004] It can be seen that the existing manual switching method has the problems of high risk and low testing efficiency. Summary of the Invention

[0005] The purpose of this application is to address the deficiencies in the above-mentioned prior art and provide a voltage switching circuit, a test method, a test driver and a voltage switching system, which can reduce the waiting time when switching voltage, improve switching efficiency and reduce the risk of personnel entering a radiation environment.

[0006] To achieve the above objectives, the technical solutions adopted in the embodiments of the present application are as follows: In a first aspect, the present application provides a voltage switching circuit for use in a radiation test environment, comprising: a DCDC converter, a plurality of voltage switching units, a first inductor, and a first resistor; The enable pin of the DCDC converter is electrically connected to the first drive output terminal of the test driver; the switch node pin of the DCDC converter is electrically connected to one end of the first inductor, and the other end of the first inductor is electrically connected to the output end of each voltage switching unit; one end of the first resistor is grounded, and the other end is electrically connected to the feedback pin of the DCDC converter and the input end of each voltage switching unit; The control end of each voltage switching unit is electrically connected to the driving end of the test driver, and the output end of each voltage switching unit is electrically connected to the power supply end of the chip to be tested, and is used to output different target power supply voltages to the chip to be tested according to the voltage switching signal output by the test driver through the second control end.

[0007] In an optional embodiment, the plurality of voltage switching units include: a first voltage switching unit, a second voltage switching unit, and a third voltage switching unit, and the second control terminal includes: a first sub-control terminal, a second sub-control terminal, and a third sub-control terminal; The first voltage switching unit is configured to output a first target power supply voltage to the chip under test when the first sub-control terminal indicates conduction, wherein the first target power supply voltage is greater than a preset standard power supply voltage of the chip under test; The second voltage switching unit is configured to output a second target power supply voltage to the chip under test when the second sub-control terminal indicates conduction, wherein the second target power supply voltage is equal to the preset standard power supply voltage; The third voltage switching unit is configured to output a third target power supply voltage to the chip under test when the third sub-control terminal indicates conduction, wherein the third target power supply voltage is lower than the preset standard power supply voltage.

[0008] In an optional embodiment, each of the voltage switching units includes: a first capacitor, a second resistor, a third resistor and an NMOS transistor; The other end of the first inductor is electrically connected to one end of the first capacitor, one end of the second resistor, and a first preset power supply, respectively; the other end of the first capacitor and the other end of the second resistor are electrically connected to the drain of the NMOS transistor; The gate of the NMOS transistor is electrically connected to the second control terminal of the test driver and one end of the third resistor, and the other end of the third resistor is grounded; the source of the NMOS transistor is electrically connected to the other end of the first resistor.

[0009] In an optional implementation, the resistance value of the second resistor in each of the voltage switching units is determined according to a target power supply voltage required to be output by the voltage switching circuit.

[0010] In an optional embodiment, the voltage switching circuit further includes: a second capacitor; One end of the second capacitor is electrically connected to the other end of the first inductor, one end of the first capacitor, one end of the second resistor and a first preset power supply, respectively, and the other end of the second capacitor is grounded.

[0011] In an optional embodiment, the voltage switching circuit further includes: a fourth resistor and a fifth resistor; One end of the fourth resistor is electrically connected to the first driving output end of the test driver, the other end of the fourth resistor is electrically connected to the enable pin of the DCDC converter and one end of the fifth resistor, and the other end of the fifth resistor is grounded.

[0012] In an optional embodiment, the voltage switching circuit further includes: a third capacitor and a fourth capacitor; One end of the third capacitor is electrically connected to the bootstrap power supply pin of the DCDC converter, and the other end is electrically connected to one end of the first inductor; One end of the fourth capacitor is electrically connected to the second preset power supply, and the other end of the fourth capacitor is grounded.

[0013] In an optional embodiment, the chip to be tested includes a memory chip, and the memory chip includes at least one of the following: a random access memory, a read-only memory, and a flash memory.

[0014] In a second aspect, the present application provides a soft failure test method for use in a radiation test environment, which is applied to a test driver, wherein the test driver is electrically connected to the voltage switching circuit described in any of the preceding embodiments, and the voltage switching circuit is electrically connected to a chip to be tested, the method comprising: Obtaining a test request carrying a target test type, where the target test type is used to indicate a relationship between a target power supply voltage of the chip to be tested and a preset standard voltage; generating a voltage switching instruction according to the test request and sending the instruction to the voltage switching circuit, so that the voltage switching circuit outputs a target supply voltage corresponding to the target test type according to the voltage switching instruction; When the chip under test is powered by the target power supply voltage, a soft failure rate of the chip under test is measured and obtained.

[0015] In a third aspect, the present application provides a test driver comprising: a processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor. When the test driver is running, the processor communicates with the storage medium through the bus, and the processor executes the machine-readable instructions to perform the steps of the soft failure test method applied to the radiation test environment as described in the aforementioned embodiment.

[0016] In a fourth aspect, the present application provides a voltage switching system, comprising a host computer, the test driver in the above embodiment, the voltage switching circuit in the above embodiment, and a chip to be tested, wherein the test driver is electrically connected to the voltage switching circuit and the host computer, respectively, and the voltage switching circuit is electrically connected to the chip to be tested; The host computer is configured to receive a test request from a user and send the test request to the test driver, wherein the test request carries a target test type, and the target test type is used to indicate a relationship between a target power supply voltage of the chip to be tested and a preset standard voltage; The test driver is configured to generate a voltage switching instruction according to the test request and send the instruction to the voltage switching circuit; The voltage switching circuit is used to output the target power supply voltage corresponding to the target test type to power the chip to be tested according to the voltage switching instruction. When the chip to be tested is powered by the target power supply voltage, the test driver is used to measure and obtain the soft failure rate of the chip to be tested and send it to the host computer.

[0017] The beneficial effects of this application are: In the voltage switching circuit, test method, test driver and voltage switching system provided by the embodiments of the present application, the voltage switching circuit includes: a DCDC converter, a plurality of voltage switching units, a first inductor and a first resistor; wherein the enable pin of the DCDC converter is electrically connected to the first drive output terminal of the test driver; the switch node pin of the DCDC converter is electrically connected to one end of the first inductor, the other end of the first inductor is electrically connected to the output end of each voltage switching unit, and the output end of each voltage switching unit is electrically connected to the power supply end of the chip to be tested; one end of the first resistor is grounded, and the other end is connected to the feedback pin of the DCDC converter, the feedback pin of each voltage switching unit, and the feedback pin of each voltage switching unit. The input end of the element is electrically connected; the control end of each voltage switching unit is electrically connected to each second driving output end of the test driver, and each voltage switching unit is used to switch the output target power supply voltage to the chip to be tested according to the voltage switching signal output by the test driver through each second driving output end. It is realized that the test driver can remotely output a voltage switching signal to the multiple voltage switching units, and then the target voltage switching unit in the multiple voltage switching units can quickly switch the output target power supply voltage according to the voltage switching signal. Compared with the existing manual switching method, the waiting time when switching voltage can be reduced, the switching efficiency is improved, and the risk of personnel entering the radiation environment is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 A schematic diagram of a voltage switching system for use in a radiation testing environment provided by an embodiment of the present application; Figure 2 A schematic diagram of the structure of a voltage switching circuit applied to a radiation test environment provided in an embodiment of the present application; Figure 3 A schematic diagram of the circuit structure of a voltage switching unit provided in an embodiment of the present application; Figure 4 A partial structural diagram of another voltage switching circuit for use in a radiation testing environment provided by an embodiment of the present application; Figure 5 A schematic structural diagram of another voltage switching circuit for use in a radiation testing environment provided by an embodiment of the present application; Figure 6 A flowchart of a soft failure test method applied to a radiation test environment provided in an embodiment of the present application; Figure 7 A schematic structural diagram of a test driver provided in an embodiment of the present application. DETAILED DESCRIPTION

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for protection, but merely represents selected embodiments of the present application. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in the present application without creative work are within the scope of protection of the present application.

[0022] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0023] In existing technology, when testing the soft failure rate of a chip under test in multiple test modes under radiation conditions, testers often have to wait until the radiation dose drops to a safe level before entering the radiation chamber to manually switch test modes. Therefore, this existing manual switching method is highly risky and has low test efficiency.

[0024] In view of this, the present application provides a voltage switching circuit for use in a radiation test environment, wherein the voltage switching circuit may include multiple voltage switching units, so that a test driver can output a voltage switching signal to the multiple voltage switching units, and then the multiple voltage switching units can quickly switch the output target power supply voltage according to the voltage switching signal. Compared with the existing manual switching method, it can reduce the waiting time when switching voltage, improve switching efficiency, and reduce the risk of personnel entering a radiation environment.

[0025] Figure 1Schematic diagram of a voltage switching system for use in a radiation test environment provided in an embodiment of the present application. Figure 1 As shown, the voltage switching system may include: a host computer 100, a test driver 200, a voltage switching circuit 300 and a chip to be tested 500. Figure 1 As shown, the test driver 200 , the voltage switching circuit 300 and the chip under test 500 are all located in the radiation environment of the radiation source 400 .

[0026] Among them, the test driver 200 is electrically connected to the host computer 100 and the voltage switching circuit 300 respectively. The host computer 100 receives the user's test request and sends the test request to the test driver 200, wherein the test request carries a target test type, and the target test type is used to indicate the relationship between the target power supply voltage of the chip to be tested and the preset standard voltage. The test driver 200 generates a voltage switching instruction based on the test request and sends it to the voltage switching circuit 300, so that the voltage switching circuit 300 outputs the target power supply voltage corresponding to the target test type according to the voltage switching instruction. When the chip to be tested is powered by the target power supply voltage, the test driver 200 measures the chip to be tested 500 in the radiation environment of the radiation source 400 to obtain the soft failure rate of the chip to be tested, and feeds back the soft failure rate of the chip to be tested 500 to the host computer 100.

[0027] The host computer 100 can provide a test operation interface for the tester to select a test type. For example, the user can select any test type from multiple test types as the target test type. A test request can be generated based on the determined target test type, and the generated test request can be further sent to the test driver 200. Optionally, the host computer 100 can be an industrial computer.

[0028] Optionally, the radiation source may be a neutron flux, a proton flux, an X-ray, an α-ray, a β-ray, a γ-ray, etc., which is not limited here.

[0029] In some embodiments, when the test driver 200 measures the soft failure rate of the chip under test 500 within the radiation environment of the radiation source 400, it can use preset data read and write instructions to write preset data to a designated storage area of ​​the chip under test 500 and read data from the designated storage area. Based on the difference between the written data and the read data, the soft failure rate of the chip under test can be statistically calculated. Optionally, to prevent the test driver 200 from being affected by the radiation environment, the test driver 200 can be subjected to radiation protection.

[0030] Figure 2 This is a schematic diagram of a voltage switching circuit for use in a radiation test environment provided by an embodiment of the present application. Figure 2As shown, the voltage switching circuit includes a DC to DC (DCDC) converter 10 , a plurality of voltage switching units, a first inductor L1 , and a first resistor R1 .

[0031] The enable pin EN of the DCDC converter 10 is electrically connected to the first drive output terminal of the test driver; the switch node pin SW of the DCDC converter 10 is electrically connected to one end of the first inductor L1, the other end of the first inductor L1 is electrically connected to the output end of each voltage switching unit, and the output end of each voltage switching unit is electrically connected to the power supply end of the chip to be tested; one end of the first resistor R1 is grounded, and the other end is electrically connected to the feedback pin VFB of the DCDC converter 10 and the input end of each voltage switching unit; The control end of each voltage switching unit is electrically connected to each second driving output end of the test driver. Each voltage switching unit is used to switch and output the target power supply voltage to the chip under test according to the voltage switching signal output by the test driver through each second driving output port.

[0032] The DCDC converter 10 is used to convert and stabilize the input voltage received through the input voltage pin VIN to provide a stable power supply voltage for the chip under test. Optionally, the input voltage pin VIN can receive an input voltage in the range of 4.5V to 18V, but is not limited thereto. The power supply voltage of the chip under test can be 1V, 3V, 5V, etc., which is not limited here and may vary according to the actual application scenario. In some embodiments, the DCDC converter 10 may include: a ground pin GND, a bootstrap pin VBST, a switch node pin SW, an enable pin EN, a feedback pin VFB, and an input voltage pin VIN, wherein the ground pin GND is the input voltage pin VIN for receiving input power; the switch node is used to connect the high-side and low-side power transistors; the enable pin EN is used to control whether the DCDC converter 10 is working (high level enable); the bootstrap pin VBST is used to power the high-side NFET gate drive circuit and requires an external capacitor; the ground pin GND is the ground terminal of the DCDC converter 10; and the feedback pin VFB is used to detect the output voltage and adjust the output in conjunction with the feedback resistor network.

[0033] It should be noted that the working principle of each pin in the DCDC converter 10 can be found in the technical manual of the DCDC converter 10 and will not be described in detail here.

[0034] Optionally, the voltage switching circuit may include any number of voltage switching units, such as Figure 2As shown, it can include three voltage switching units, namely the first voltage switching unit 11, the second voltage switching unit 12 and the third voltage switching unit 13, but it is not limited to this. For example, in some scenarios, it can include two or more units, such as five, which is not limited here.

[0035] Optionally, the first resistor R1 can be used to feed back a portion of the target supply voltage output by the voltage switching unit to the feedback pin VFB of the DCDC converter 10, so that the DCDC converter 10 can adjust the output target supply voltage based on the comparison between the feedback voltage and the internal reference voltage, thereby achieving precise control of the target supply voltage.

[0036] Among them, each voltage switching unit can output a different supply voltage in the on state. For example, the first voltage switching unit 11 can output a supply voltage greater than the preset standard voltage in the on state, the second voltage switching unit 12 can output a supply voltage equal to the preset standard voltage in the on state, and the third voltage switching unit 13 can output a supply voltage less than the preset standard voltage in the on state.

[0037] The working principle of the voltage switching circuit is: when switching the voltage, the test driver can generate a high-level signal and a voltage switching instruction based on a test request carrying a target test type, wherein the voltage switching instruction may include multiple sub-voltage switching instructions, and the target test type is used to indicate the relationship between the target power supply voltage of the chip to be tested and the preset standard voltage, for example, the target power supply voltage is greater than the preset standard voltage, the target power supply voltage is equal to the preset standard voltage, or the target power supply voltage is less than the preset standard voltage.

[0038] Optionally, a test request carrying the target test type can be generated by a tester through a host computer, and the generated test request can be sent to the test driver. Each sub-voltage switching instruction can be expressed as a level signal, of course, the specific expression form is not limited to this.

[0039] Furthermore, the high-level signal generated by the test driver can be sent to the enable pin EN of the DCDC converter 10 through the first drive output terminal of the test driver; the multiple sub-voltage switching instructions generated by the test driver can be sent to each voltage switching unit through the second drive output terminal to control the target voltage switching unit that can output the target supply voltage to be in the on state and the other voltage switching units to be in the off state.

[0040] Among them, when the enable pin EN of the DCDC converter 10 is at a high level, the DCDC converter 10 will be in an operating state. When the DCDC converter 10 is in an operating state, the target voltage switching unit that can output the target supply voltage will output the target supply voltage through its output end for powering the chip to be tested, thereby realizing that the test driver can remotely output a voltage switching signal to the multiple voltage switching units, and then the target voltage switching units in the multiple voltage switching units can quickly switch to output the target supply voltage according to the voltage switching signal. Compared with the existing manual switching method, the waiting time when switching voltage can be reduced, the switching efficiency can be improved, and the risk of personnel entering the radiation environment can be reduced.

[0041] In summary, an embodiment of the present application provides a voltage switching circuit for use in a radiation test environment, the voltage switching circuit comprising: a DCDC converter, a plurality of voltage switching units, a first inductor, and a first resistor; wherein an enable pin of the DCDC converter is electrically connected to a first drive output terminal of a test driver; a switch node pin of the DCDC converter is electrically connected to one end of the first inductor, the other end of the first inductor is electrically connected to the output terminal of each voltage switching unit, and the output terminal of each voltage switching unit is electrically connected to a power supply terminal of a chip to be tested; one end of the first resistor is grounded, and the other end is electrically connected to a feedback pin of the DCDC converter and an input terminal of each voltage switching unit; a control terminal of each voltage switching unit is electrically connected to each second drive output terminal of the test driver, and each voltage switching unit is configured to switch an output target power supply voltage to the chip to be tested according to a voltage switching signal output by the test driver through each second drive output terminal. This enables the test driver to remotely output a voltage switching signal to the plurality of voltage switching units, and then the target voltage switching units in the plurality of voltage switching units can quickly switch to output the target power supply voltage according to the voltage switching signal. Compared with the existing manual switching method, the waiting time for switching voltages can be reduced, the switching efficiency can be improved, and the risk of personnel entering a radiation environment can be reduced.

[0042] In an optional embodiment, if Figure 2 As shown, multiple voltage switching units include: a first voltage switching unit 11, a second voltage switching unit 12 and a third voltage switching unit 13, the first voltage switching unit 11 includes a first sub-control terminal CTRL1, the second voltage switching unit 12 includes a second sub-control terminal CTRL2, and the third voltage switching unit 13 includes a third sub-control terminal CTRL3.

[0043] Among them, the first voltage switching unit 11 is used to output a first target power supply voltage to the chip to be tested through the first sub-output terminal of the first voltage switching unit 11 when the first sub-control terminal CTRL1 indicates conduction, and the first target power supply voltage is greater than the preset standard power supply voltage of the chip to be tested.

[0044] The second voltage switching unit 12 is used to output a second target power supply voltage to the chip under test through the second sub-output terminal of the second voltage switching unit 12 when the second sub-control terminal CTRL2 indicates conduction. The second target power supply voltage is equal to the preset standard power supply voltage.

[0045] The third voltage switching unit 13 is configured to output a third target power supply voltage to the chip under test through the third sub-output terminal of the third voltage switching unit 13 when the third sub-control terminal CTRL3 indicates conduction. The third target power supply voltage is lower than the preset standard power supply voltage.

[0046] The preset standard power supply voltage of the chip to be tested may be a specified power supply voltage of the chip to be tested. Optionally, the preset standard power supply voltage may be 1V, 2V, 5V, etc., depending on the actual application scenario, which is not limited here.

[0047] In some embodiments, the value of the first target power supply voltage can be 1.1 to 1.2 times the preset standard power supply voltage, and the value of the third target power supply voltage can be 0.8 to 0.9 times the preset standard power supply voltage. This is not limited here and can be flexibly set according to actual application scenarios.

[0048] Based on the above description, it can be understood that, according to an actual test scenario, any one of the first target power supply voltage, the second target power supply voltage, and the third target power supply voltage can be selected as a basis for voltage switching.

[0049] For example, if it is necessary to test the soft failure rate of the chip under test at a third target power supply voltage, then the third sub-voltage switching instruction can be generated according to the above method. The first sub-voltage switching instruction can be transmitted to the first sub-control terminal CTRL1 to instruct the first voltage switching unit 11 to turn off; the second sub-voltage switching instruction can be transmitted to the second sub-control terminal CTRL2 to instruct the second voltage switching unit 12 to turn off; and the third sub-voltage switching instruction can be transmitted to the third sub-control terminal CTRL3 to instruct the third voltage switching unit 13 to turn on.

[0050] Furthermore, when the DCDC converter 10 is in working state and the third voltage switching unit 13 is turned on, the third sub-output end of the third voltage switching unit 13 will output a third target power supply voltage that is lower than the preset standard power supply voltage to the chip to be tested. At this time, the chip to be tested can be powered by the third target power supply voltage.

[0051] By applying the embodiments of the present application, it is possible to set a first voltage switching unit 11 that can output a voltage greater than the preset standard power supply voltage, a second voltage switching unit 12 that can output a voltage less than the preset standard power supply voltage, and a third voltage switching unit 13 that can output a voltage less than the preset standard power supply voltage based on the preset standard power supply voltage of the chip to be tested. This can meet the testing requirements of the chip to be tested at high voltage, low voltage and normal voltage (preset standard power supply voltage), and improve the applicability of the present application.

[0052] Figure 3 A schematic diagram of a circuit structure of a voltage switching unit provided in an embodiment of the present application. In an optional embodiment, as Figure 3 As shown, each voltage switching unit includes: a first capacitor C1, a second resistor R2, a third resistor R3 and an NMOS transistor; wherein the other end of the first inductor L1 is electrically connected to one end of the first capacitor C1, one end of the second resistor R2 and the first preset power supply VDD respectively, and the other end of the first capacitor C1 and the other end of the second resistor R2 are electrically connected to the drain of the NMOS transistor; the gate of the NMOS transistor is electrically connected to the second control end of the test driver and one end of the third resistor R3, and the other end of the third resistor R3 is grounded; the source of the NMOS transistor is electrically connected to the other end of the first resistor R1.

[0053] The second resistor R2 and the first resistor R1 can cooperate to control the voltage of the target power supply voltage. The values ​​of the first resistor R1 and the second resistor R2 can be adjusted according to the required target power supply voltage. The third resistor R3 can be used to control the conduction speed of the NMOS tube, preventing excessive current changes, and playing a role in protecting and stabilizing the circuit; the first capacitor C1 can be regarded as a filter capacitor, which is used to filter out ripple in the output voltage, making the target power supply voltage smoother and more stable, so as to provide high-quality power supply to the chip under test, and also helping to improve the dynamic response characteristics of the circuit.

[0054] It should be noted that the voltage switching unit is not limited to this embodiment. For example, the NMOS transistor in the voltage switching unit can also be replaced with a PMOS transistor, and the corresponding peripheral circuits can be adjusted accordingly. Of course, the specific adjustment method is not limited to this and can be flexibly set according to the actual application scenario.

[0055] In an optional implementation, the resistance value of the second resistor R2 in each voltage switching unit is determined according to the target power supply voltage required to be output by the voltage switching unit.

[0056] Wherein, the target supply voltage is Vout, the first resistor R1 is R1, and the second resistor R2 is R2. Then, the target supply voltage can be calculated by referring to the following formula: Vout=0.768×(1+ ) Among them, 0.768 represents the preset coefficient. Based on this formula, it can be seen that when the value of the first resistor R1 is fixed, the value of the corresponding second resistor R2 can be determined according to the target power supply voltage required to be output by each voltage switching unit.

[0057] Take the above content as an example, for example, the preset standard power supply voltage is 1.1V, the first target power supply voltage corresponding to the first voltage switching unit 11 is 0.99V, the second target power supply voltage corresponding to the second target switching unit is 1.1V, and the third target power supply voltage corresponding to the third target switching unit is 1.21V. Optionally, the value of the first resistor R1 can be 10kΩ, the value of the second resistor R2-1 corresponding to the first voltage switching unit 11 can be 2.9kΩ, the value of the second resistor R2-2 corresponding to the second voltage switching unit 12 can be 4.33kΩ, and the value of the second resistor R2-3 corresponding to the third voltage switching unit 13 can be 5.76kΩ.

[0058] Of course, it should be noted that the values ​​of the first resistor R1 and the second resistor R2 are not limited to this, and can be flexibly set according to actual application scenarios.

[0059] Figure 4 A partial structural diagram of another voltage switching circuit for use in a radiation test environment provided in an embodiment of the present application. In an optional embodiment, as Figure 4 As shown, the voltage switching circuit further includes: a fourth resistor R4 and a fifth resistor R5; one end of the fourth resistor R4 is electrically connected to the first drive output end of the test driver, the other end of the fourth resistor R4 is electrically connected to the enable pin EN of the DCDC converter 10 and one end of the fifth resistor R5, and the other end of the fifth resistor R5 is grounded.

[0060] Among them, the fourth resistor R4 can play a role in current limiting protection. For example, if the level signal input to the first driving output terminal has an abnormally high voltage or high current, the fourth resistor R4 can prevent excessive current from damaging the enable pin EN or other related components of the DCDC converter 10 through its own voltage division and current limiting, thereby playing a preliminary overcurrent protection role.

[0061] The fifth resistor R5 can be regarded as a pull-down resistor, one end of which is connected to the other end of the fourth resistor R4 and the other end is grounded. When a low-level signal is input to the enable pin EN, the fifth resistor R5 can stably pull the potential of the enable pin EN down to the ground level, ensuring that the enable pin EN is in a clear low-level state, avoiding false triggering due to floating potential, ensuring that the DCDC converter 10 is reliably shut down when not enabled, and enhancing the operational stability of the circuit.

[0062] In an optional embodiment, the voltage switching circuit also includes: a third capacitor C3 and a fourth capacitor C4; one end of the third capacitor C3 is electrically connected to the bootstrap power supply pin of the DCDC converter 10, and the other end is electrically connected to one end of the first inductor L1; one end of the fourth capacitor C4 is electrically connected to the second preset power supply VCC, and the other end of the fourth capacitor C4 is grounded.

[0063] Among them, the value of the third capacitor C3 can be 0.1μF, and its operation is to provide voltage for the high-end NFET gate drive circuit inside the DCDC converter 10. During the operation of the switch tube, it cooperates with the switch node pin SW to maintain the gate drive voltage to ensure that the high-end switch tube is normally turned on and off.

[0064] The fourth capacitor C4 mainly performs a filtering function to remove high-frequency noise in the second preset power supply VCC, making the voltage input to the input voltage pin VIN of the DCDC converter 10 more stable. It also plays an energy storage role to a certain extent to cope with instantaneous current demand.

[0065] It should be noted that the voltages of the first preset power supply VDD and the second preset power supply VCC can be flexibly set according to actual application scenarios and are not limited here.

[0066] In an optional embodiment, the chip to be tested includes a memory chip, and the memory chip includes at least one of the following: a random access memory (RAM), a read-only memory (ROM), and a flash memory.

[0067] Among them, random access memory (RAM) may include: static random access memory (SRAM) and dynamic random access memory (DRAM); read-only memory (ROM) may include: programmable read-only memory (PROM), electrically erasable programmable read-only memory (EEPROM), etc., which are not limited here.

[0068] It should be noted that the type of chips to be tested used in this application is not limited to this. Optionally, other types of memory chips may also be included according to actual application scenarios.

[0069] Figure 5 This is a schematic diagram of another voltage switching circuit for use in a radiation test environment provided by an embodiment of the present application. In an optional embodiment, as Figure 5 As shown, the voltage switching circuit also includes: a second capacitor C2; one end of the second capacitor C2 is electrically connected to the other end of the first inductor L1, one end of the first capacitor C1, one end of the second resistor R2 and the first preset power supply VDD, and the other end of the second capacitor C2 is grounded.

[0070] In some embodiments, considering that the chip to be tested will generate high-frequency transient current demands on the power pin when it is working, optionally, a local charge storage reservoir can be provided near the power pin of the chip to be tested through the second capacitor C2 to meet the transient current demands of the chip to be tested, reduce the impact of the power bus voltage when the chip to be tested obtains transient current from the power bus, and avoid interference to other circuit modules caused by fluctuations in the power bus voltage.

[0071] It should be noted that this application does not limit the number of the second capacitor C2 and the fourth capacitor C4. One or more capacitors may be provided according to the actual application scenario. Of course, the number of the second resistor R2 is also not limited. One or more capacitors may be provided according to the actual application scenario. In addition, it should be noted that in some embodiments, the first voltage switching unit 11 may correspond to the second resistor R2-1, the second voltage switching unit 12 may correspond to the second resistor R2-2, and the third voltage switching unit 13 may correspond to the second resistor R2-3. Figure 5 The working principle of each component can be found in the above description and will not be repeated here.

[0072] By applying the embodiments of the present application, it is possible to remotely output a voltage switching signal to the multiple voltage switching units based on the test driver, and then the target voltage switching unit among the multiple voltage switching units can quickly switch to output the target power supply voltage according to the voltage switching signal. Compared with the existing manual switching method, the waiting time when switching voltage can be reduced, the switching efficiency can be improved, and the risk of personnel entering a radiation environment can be reduced; in addition, the stable output of the target power supply voltage and the stable operation of the voltage switching circuit can be guaranteed, thereby improving the applicability of the present application.

[0073] Figure 6 A flowchart of a soft failure test method for a radiation test environment provided in an embodiment of the present application is provided. The method can be applied to a test driver, the test driver being connected to the voltage switching circuit of any of the aforementioned embodiments, and the voltage switching circuit being electrically connected to the chip to be tested, and the method comprising: S101: Obtain a test request carrying a target test type, where the target test type is used to indicate a relationship between a target power supply voltage of a chip to be tested and a preset standard voltage.

[0074] S102: Generate a voltage switching instruction according to the test request and send it to the voltage switching circuit, so that the voltage switching circuit outputs a target power supply voltage corresponding to the target test type according to the voltage switching instruction.

[0075] In which, during specific control, the target voltage switching unit in the voltage switching circuit can output the target power supply voltage corresponding to the target test type according to the voltage switching instruction. The target voltage switching unit is a voltage switching unit corresponding to the target power supply voltage. In other words, the target voltage switching unit is a voltage switching unit among multiple voltage switching units that can output the target power supply voltage.

[0076] S103 : When the chip to be tested is powered by the target power supply voltage, measure and obtain the soft failure rate of the chip to be tested.

[0077] The test driver may be pre-configured with a voltage switching mapping table, and the voltage switching mapping table may include voltage switching instructions corresponding to multiple test types.

[0078] Optionally, the test driver can be communicatively connected with the host computer. Optionally, referring to the aforementioned relevant content, in some embodiments, the tester can select any one of a plurality of test types as the target test type through the test operation interface provided by the host computer. The host computer can generate a test request based on the determined target test type and send it to the test driver; the test driver can receive the test request sent by the host computer, and according to the voltage switching mapping table, it can determine the voltage switching instruction corresponding to the target test type in the test request; according to the voltage switching instruction, referring to the aforementioned method, the target voltage switching unit can be controlled to output the target power supply voltage corresponding to the target test type.

[0079] Furthermore, when the chip under test is powered by the target power supply voltage, if it is determined that the chip under test can operate stably, a read and write test is performed on the chip under test to obtain the soft failure rate of the chip under test.

[0080] It should be noted that if the actual test scenario requires testing of high, medium, and low voltages, some implementations can set the output duration of the high, medium, and low voltages to 1 / 3 of the total test duration. For example, if the entire test lasts three hours, the output time of the high voltage can be set to 1 hour, the output time of the medium voltage to 1 hour, and the output time of the low voltage to 1 hour. Of course, the specific setting method is not limited to this.

[0081] By applying the embodiments of the present application, it is possible to remotely output a voltage switching signal to the multiple voltage switching units based on the test driver, and then the target voltage switching unit among the multiple voltage switching units can quickly switch to output the target power supply voltage according to the voltage switching signal. Compared with the existing manual switching method, the waiting time when switching voltage can be reduced, the switching efficiency can be improved, and the risk of personnel entering a radiation environment can be reduced.

[0082] Figure 7This is a schematic diagram of a test driver structure provided in an embodiment of the present application, and the test driver can execute the above method embodiment. Figure 7 As shown, the test driver may include: a processor 210, a storage medium 220, and a bus 230. The storage medium 220 stores machine-readable instructions executable by the processor 210. When the test driver is running, the processor 210 and the storage medium 220 communicate via the bus 230, and the processor 210 executes the machine-readable instructions to perform the steps of the above-described method embodiment. The specific implementation methods and technical effects are similar and will not be repeated here.

[0083] Optionally, the present application further provides a storage medium storing a computer program, which, when executed by a processor, executes the steps of the above method embodiment. The specific implementation and technical effects are similar and will not be described in detail here.

[0084] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0085] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0086] In addition, the functional units in the various embodiments of the present application may be integrated into a single processing unit, or each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0087] The above-mentioned integrated unit implemented in the form of a software functional unit can be stored in a computer-readable storage medium. The above-mentioned software functional unit is stored in a storage medium and includes a number of instructions for causing a computer device (which can be a personal computer, server, or network device, etc.) or a processor (English: processor) to perform some steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: USB flash drives, mobile hard drives, read-only memory (English: Read-Only Memory, abbreviated: ROM), random access memory (English: Random Access Memory, abbreviated: RAM), magnetic disks or optical disks, and other media that can store program code.

[0088] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element. The above description is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application. It should be noted that similar numbers and letters represent similar items in the following figures. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. The above description is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A voltage switching circuit for use in a radiation testing environment, characterized in that: include: A DCDC converter, a plurality of voltage switching units, a first inductor, and a first resistor; The enable pin of the DCDC converter is electrically connected to the first drive output terminal of the test driver; the switch node pin of the DCDC converter is electrically connected to one end of the first inductor, the other end of the first inductor is electrically connected to the output end of each voltage switching unit, and the output end of each voltage switching unit is electrically connected to the power supply end of the chip to be tested; one end of the first resistor is grounded, and the other end is electrically connected to the feedback pin of the DCDC converter and the input end of each voltage switching unit; The control end of each voltage switching unit is electrically connected to each second driving output end of the test driver, and each voltage switching unit is used to switch the output target power supply voltage to the chip to be tested according to the voltage switching signal output by the test driver through each second driving output end.

2. The voltage switching circuit according to claim 1, wherein: The plurality of voltage switching units include: a first voltage switching unit, a second voltage switching unit, and a third voltage switching unit, wherein the first voltage switching unit includes a first sub-control terminal, the second voltage switching unit includes a second sub-control terminal, and the third voltage switching unit includes a third sub-control terminal; The first voltage switching unit is configured to output a first target power supply voltage to the chip under test through the first sub-output terminal of the first voltage switching unit when the first sub-control terminal indicates conduction, wherein the first target power supply voltage is greater than a preset standard power supply voltage of the chip under test; The second voltage switching unit is configured to output a second target power supply voltage to the chip under test through the second sub-output terminal of the second voltage switching unit when the second sub-control terminal indicates conduction, wherein the second target power supply voltage is equal to the preset standard power supply voltage; The third voltage switching unit is used to output a third target power supply voltage to the chip under test through the third sub-output terminal of the third voltage switching unit when the third sub-control terminal indicates conduction, and the third target power supply voltage is lower than the preset standard power supply voltage.

3. The voltage switching circuit according to claim 1, wherein: Each of the voltage switching units includes: a first capacitor, a second resistor, a third resistor and an NMOS transistor; The other end of the first inductor is electrically connected to one end of the first capacitor, one end of the second resistor, and a first preset power supply, respectively; the other end of the first capacitor and the other end of the second resistor are electrically connected to the drain of the NMOS transistor; The gate of the NMOS transistor is electrically connected to the second control terminal of the test driver and one end of the third resistor, and the other end of the third resistor is grounded; the source of the NMOS transistor is electrically connected to the other end of the first resistor.

4. The voltage switching circuit according to claim 3, wherein: The resistance value of the second resistor in each of the voltage switching units is determined according to the target supply voltage required to be output by the voltage switching unit.

5. The voltage switching circuit according to claim 1, wherein: The voltage switching circuit further includes: a fourth resistor and a fifth resistor; One end of the fourth resistor is electrically connected to the first driving output end of the test driver, the other end of the fourth resistor is electrically connected to the enable pin of the DCDC converter and one end of the fifth resistor, and the other end of the fifth resistor is grounded.

6. The voltage switching circuit according to claim 1, wherein: The voltage switching circuit further includes: a third capacitor and a fourth capacitor; One end of the third capacitor is electrically connected to the bootstrap power supply pin of the DCDC converter, and the other end is electrically connected to one end of the first inductor; One end of the fourth capacitor is electrically connected to the second preset power supply, and the other end of the fourth capacitor is grounded.

7. The voltage switching circuit according to claim 3, wherein: The voltage switching circuit further includes: a second capacitor; One end of the second capacitor is electrically connected to the other end of the first inductor, one end of the first capacitor, one end of the second resistor, and the first preset power supply, respectively, and the other end of the second capacitor is grounded.

8. A soft failure test method applied to a radiation test environment, characterized in that: Applied to a test driver, the test driver is electrically connected to the voltage switching circuit according to any one of claims 1 to 7, and the voltage switching circuit is electrically connected to a chip to be tested, the method comprising: Obtaining a test request carrying a target test type, where the target test type is used to indicate a relationship between a target power supply voltage of the chip to be tested and a preset standard voltage; generating a voltage switching instruction according to the test request and sending the instruction to the voltage switching circuit, so that the voltage switching circuit outputs a target supply voltage corresponding to the target test type according to the voltage switching instruction; When the chip under test is powered by the target power supply voltage, a soft failure rate of the chip under test is measured and obtained.

9. A test driver, characterized in that: include: A processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor. When the test driver is running, the processor and the storage medium communicate via the bus, and the processor executes the machine-readable instructions to perform the steps of the soft failure test method applied to a radiation test environment as described in claim 8.

10. A voltage switching system, characterized in that: The device comprises a host computer, the test driver according to claim 9, the voltage switching circuit according to any one of claims 1 to 7, and a chip to be tested, wherein the test driver is electrically connected to the voltage switching circuit and the host computer respectively, and the voltage switching circuit is electrically connected to the chip to be tested; The host computer is configured to receive a test request from a user and send the test request to the test driver, wherein the test request carries a target test type, and the target test type is used to indicate a relationship between a target power supply voltage of the chip to be tested and a preset standard voltage; The test driver is configured to generate a voltage switching instruction according to the test request and send the instruction to the voltage switching circuit; The voltage switching circuit is used to output the target power supply voltage corresponding to the target test type to power the chip to be tested according to the voltage switching instruction. When the chip to be tested is powered by the target power supply voltage, the test driver is used to measure and obtain the soft failure rate of the chip to be tested and send it to the host computer.

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