Device and method for promoting growth of gallium nitride material through photoelectric effect

Abstract

The invention relates to the technical field of photoelectric reaction, in particular to a device and method for promoting growth of gallium nitride materials through the photoelectric effect, and the device comprises a reaction cavity, the top of the reaction cavity is fixedly provided with a lens, the outer side and the bottom end of the reaction cavity are fixedly provided with heating assemblies, and the bottom end of the reaction cavity is fixedly provided with a rotating shaft. A seed crystal piece is fixedly installed at the bottom end in the reaction cavity, a glass tray is placed at the top end of the seed crystal piece, an insulating layer is fixedly installed in the side end of the reaction cavity, a conductive rod is fixedly installed in the insulating layer, and an iron sheet is fixedly installed at the end, close to the reaction cavity, of the conductive rod. A supporting cavity is fixedly installed at the end, away from the reaction cavity, of the insulating layer, a conductive head is fixedly installed in the supporting cavity, and the reaction cavity further comprises a conduction mechanism, an electromagnetic valve and a one-way valve. Through the arrangement of the lens, the iron sheet and the conduction mechanism, the purposes of uniformly covering the seed crystal with the nitrogen and the liquid gallium when the nitrogen and the liquid gallium are mixed and circularly guiding and conveying to improve the utilization rate of the nitrogen source are achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photoelectric reaction, in particular to a device and method for promoting growth of gallium nitride material by photoelectric effect. BACKGROUND

[0002] Photoelectric effect refers to the physical phenomenon that when light (or other electromagnetic radiation) is incident on the surface of a metal or other material, the material absorbs photons and emits electrons.

[0003] Gallium, with the chemical symbol Ga, is an important metal element belonging to group 13 (boron group) in the periodic table with an atomic number of 31. It has unique physical and chemical properties and is widely used in electronic industry, semiconductor technology and new energy field.

[0004] Currently, when gallium nitride is tested for material, natural deposition is adopted by mixing nitrogen gas with liquid gallium, which takes a long time for testing and observation. In addition, the deposition and mixing effect is not ideal without external intervention. Therefore, the existing nitrogen gas and liquid gallium cannot be uniformly covered on the seed crystal during mixing and cannot improve the utilization rate of nitrogen source by circulating and conveying. SUMMARY

[0005] In view of the problems in the prior art, the present application provides a device and method for promoting growth of gallium nitride material by photoelectric effect.

[0006] The technical scheme adopted by the present application to solve the technical problem is: a device and method for promoting growth of gallium nitride material by photoelectric effect, comprising a reaction cavity, a lens fixedly installed at the top of the reaction cavity, a heating assembly fixedly installed at the outside and bottom end of the reaction cavity, a rotating shaft fixedly installed at the bottom end of the reaction cavity, a seed wafer fixedly installed at the inside bottom end of the reaction cavity, a glass tray placed on the top end of the seed wafer, an insulating layer fixedly installed inside the side end of the reaction cavity, a conductive rod fixedly installed inside the insulating layer, an iron sheet fixedly installed at one end of the conductive rod close to the reaction cavity, a support cavity fixedly installed at one end of the insulating layer away from the reaction cavity, and a conductive head fixedly installed inside the support cavity.

[0007] Specifically, the reaction cavity further comprises a conducting mechanism, a solenoid valve and a one-way valve, the conducting mechanism is fixedly installed at the top end of the reaction cavity, the one-way valve is fixedly installed at the side end of the conducting mechanism, and the solenoid valve is fixedly installed at the top end of the one-way valve.

[0008] Specifically, the conducting mechanism comprises a transfer device and a transmission component, and the transfer device is fixedly installed at the bottom end of the transmission component.

[0009] Specifically, the transfer device includes an air guide tube, a pumping device, a contact plate, an extension rod, a first return spring, a central cavity, a movable rod, a sealing cover and a guide pipe. The air guide tube is fixedly installed at the top front end of the central cavity, the guide pipe is fixedly installed at the bottom end of the air guide tube, the pumping device is fixedly installed on both sides of the central cavity, the movable rod is symmetrically slidably inserted into the rear end of the central cavity, the sealing cover is fixedly installed at the front end of the movable rod, the extension rod is fixedly installed at the rear end of the movable rod, the first return spring is symmetrically fixed between the extension rod and the central cavity, and the contact plate is fixedly installed at the top of the rear end of the extension rod.

[0010] Specifically, the transmission component includes a displacement device and a transmission device, and the displacement device is slidably inserted into the interior of the transmission device.

[0011] Specifically, the displacement device includes a guide support rod, a displacement side plate, a support front frame, a center base plate, a first rack, a first gear, a second rack and an extension base. The support front frame is fixedly mounted on the front end top of the center base plate, the guide support rod is fixedly mounted at equal distances on the rear ends of both sides of the center base plate, the displacement side plate is slidably sleeved on the guide support rod, the extension base is symmetrically fixedly mounted on the rear ends of both sides of the center base plate, the first gear is rotatably mounted on the end of the extension base away from the center base plate, the second rack is fixedly mounted on the side end of the displacement side plate close to the center base plate, and the first rack is slidably inserted into the interior of the extension base and the center base plate.

[0012] Specifically, the transmission device includes an ultraviolet lamp, a second return spring, a connecting rope, a pulley, a first photoelectric sensor, a second gear, a driving motor, a contact rod, a contact cam, a third gear, a second photoelectric sensor, a fourth gear, a fifth gear, a gas collecting chamber and a positioning chamber. The ultraviolet lamp is equidistantly fixedly mounted on the inner top of the gas collecting chamber, the second return spring is symmetrically fixedly mounted on the inner front end of the gas collecting chamber, the positioning chamber is fixedly mounted on the rear end top of the gas collecting chamber, the driving motor is fixedly mounted on the top of the positioning chamber, the fourth gear and the second gear are fixedly mounted on the bottom end of the driving motor, and the fourth gear is located below the second gear, the fifth gear is rotatably mounted on the inner front end of the positioning chamber, and the fifth gear is located at the front end of the driving motor, the pulley is fixedly mounted on the top center of the fifth gear, the connecting rope is fixedly mounted on the outer ring of the pulley, the first photoelectric sensor is fixedly mounted on the inner front end of the positioning chamber, the second photoelectric sensor is fixedly mounted on the inner left side of the positioning chamber, the contact rod is fixedly mounted on the top of the second gear, the third gear is rotatably mounted on the rear end of the gas collecting chamber, and the third gear is located below the positioning chamber, and the contact cam is fixedly mounted on the bottom end of the third gear.

[0013] Specific, the rear end of the guide tube top and the front end of the gas collection cavity is connected, the top end of the pumping equipment and the two sides of the gas collection cavity are connected, the central cavity is fixedly installed at the bottom end of the gas collection cavity, the support front frame is slidingly inserted into the inside top end of the gas collection cavity, the rear end of the center base is connected with the front end of the connecting rope, the rear end of the second return spring is connected with the front end of the support front frame, the fourth gear is engaged with the third gear, the fifth gear is engaged with the second gear, and the second gear and the first gear are engaged with the first gear.

[0014] Specific, the contact plate is horizontally aligned with the contact cam, the rear end surface of the flow guide pipe is provided with an air slot matched with the sealing cover, the two ends of the support front frame are fixedly installed with clamping keys, and the inside two sides of the gas collection cavity are provided with clamping grooves, the side end of the first gear is fixedly installed with a T-shaped clamping key, the side end of the extension base close to the first gear is provided with a T-shaped clamping groove, the side end of the first gear away from the first gear is fixedly installed with a magnetic sheet, and the rear end of the extension base is fixedly installed with an iron plate, the width of the second gear and the first gear is 0.5 cm, the thickness of the first gear is 1 cm, the tooth distribution angle of the second gear is 180°, the transmission ratio of the third gear and the fourth gear is 1:2, and the first photoelectric sensor and the second photoelectric sensor are electrically connected with the pumping equipment.

[0015] A method for using a photoelectric effect promoted gallium nitride material growth device, which comprises the following steps:

[0016] S1, substrate pretreatment, chemical cleaning: ultrasonic cleaning the substrate with acetone, ethanol and deionized water for 10 minutes respectively, removing organic matter and particles, hydrofluoric acid soaking or hot sulfuric acid treatment for 1 minute, removing the oxide layer; in-situ annealing: loading the substrate into the MOCVD reaction chamber, annealing at high temperature under H2 atmosphere;

[0017] S2, parameter setting, temperature: 500-600 DEG C, pressure: 100Torr, gas flow: TMGa 10sccm, NH3 1000sccm, H2 carrier gas 2000sccm;

[0018] S3, light operation: turn on the light source, focus the irradiation of the electrified iron plate through the lens, and the iron plate is electrified, so that the iron plate can form a photoelectric effect with the light, so that the nitrogen gas in the reaction cavity can contact with the electrons released by the iron plate, so that the nitrogen gas in the reaction cavity mixes with the electrons;

[0019] S4, reaction growth: through the contact and mixing of the electrified nitrogen gas and the gallium solution, the electrified liquid gallium can be deposited and attached to the crystal seed, forming a layer of gallium nitride film.

[0020] The beneficial effects of the present application are:

[0021] First, the present invention uses a lens to illuminate an energized iron sheet, causing the iron sheet to emit ions into the interior of a reaction chamber. The ions then come into contact and mix with nitrogen gas inside the reaction chamber, causing the nitrogen gas to become charged. Subsequently, when the nitrogen gas is charged, it comes into contact and mix with liquid gallium at the bottom of the reaction chamber, causing the liquid gallium to be deposited on the surface of a glass tray, forming a uniform thickness of gallium nitride on the surface of the glass tray, thereby completing the work of uniformly generating a gallium nitride film.

[0022] Second, the present invention can transport the gas inside the gas collecting cavity to the inside of the collecting cavity when the displacement side plate and the central substrate are combined, and the pumping equipment can return the gas to the inside of the gas collecting cavity, so that the gas can pass through the ultraviolet lamp inside the gas collecting cavity again, thereby improving the lighting efficiency. At the same time, when the driving motor is running, it can drive the central substrate to move, so that the central substrate can be moved away from the gas guide pipe again. Moreover, when the gas is pushed through the central substrate again, the sealing cover can be combined with the guide pipe, so that the treated gas can enter the interior of the reaction cavity, completing the gas circulation treatment and improving the gas utilization rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The present invention will be further described below with reference to the accompanying drawings and examples.

[0024] Figure 1 This is a schematic diagram of the three-dimensional structure of the main body of the present invention from the front perspective;

[0025] Figure 2 This is a schematic diagram of the front perspective structure of the second embodiment of the reaction chamber of the present invention;

[0026] Figure 3 Schematic diagram of the three-dimensional structure of the transmission mechanism of the present invention from a front perspective;

[0027] Figure 4 It is a partial cutaway schematic diagram of the transfer device of the present invention;

[0028] Figure 5 It is a partial cutaway schematic diagram of the transmission component in the present invention;

[0029] Figure 6 Schematic diagram of the three-dimensional structure of the displacement device of the present invention from a rear perspective;

[0030] Figure 7 For the present invention Figure 6 A local enlarged schematic diagram of point A;

[0031] Figure 8 It is a partial cutaway schematic diagram of the transmission device in the present invention.

[0032] In the figure: 1-reaction chamber, 2-lens, 3-iron sheet, 4-insulating layer, 5-heating component, 6-support chamber, 7-conductive head, 8-conductive rod, 9-glass tray, 10-seed sheet, 11-rotating shaft, 12-conduction mechanism, 13-solenoid valve, 14-one-way valve, 15-transfer device, 16-transmission component, 17-air guide tube, 18-pumping device, 19-contact plate, 20-extension rod, 21-first return spring, 22-centralizing chamber, 23-movable rod, 24-sealing cover, 25-flow guide pipe, 26-displacement device, 27- Transmission device, 28-guide support rod, 29-displacement side plate, 30-support front frame, 31-center base plate, 32-first rack, 33-first gear, 34-second rack, 35-extension base, 36-ultraviolet lamp, 37-second return spring, 38-connecting rope, 39-reel, 40-first photoelectric sensor, 41-second gear, 42-drive motor, 43-contact rod, 44-contact cam, 45-third gear, 46-second photoelectric sensor, 47-fourth gear, 48-fifth gear, 49-gas collecting cavity, 50-positioning cavity. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0034] The present invention will be further described below with reference to the accompanying drawings.

[0035] Example 1

[0036] like Figure 1 As shown, a device and method for promoting the growth of gallium nitride materials by the photoelectric effect of the present invention include a reaction chamber 1, a lens 2 is fixedly installed on the top of the reaction chamber 1, a heating assembly 5 is fixedly installed on the outside and bottom of the reaction chamber 1, a rotating shaft 11 is fixedly installed on the bottom end of the reaction chamber 1, a seed crystal piece 10 is fixedly installed on the bottom end of the reaction chamber 1, a glass tray 9 is placed on the top of the seed crystal piece 10, an insulating layer 4 is fixedly installed on the side end of the reaction chamber 1, a conductive rod 8 is fixedly installed on the inside of the insulating layer 4, an iron sheet 3 is fixedly installed on the end of the conductive rod 8 close to the reaction chamber 1, a support cavity 6 is fixedly installed on the end of the insulating layer 4 away from the reaction chamber 1, and a conductive head 7 is fixedly installed on the inside of the support cavity 6. The conductive head can be replaced with an electron gun in some application scenarios.

[0037] A method for using a photoelectric effect promoted gallium nitride material growth device, comprising the following steps:

[0038] S1, substrate pretreatment, chemical cleaning: ultrasonic cleaning the substrate with acetone, ethanol, deionized water for 10 minutes respectively, removing organic matter and particles, HF soaking Si substrate or hot sulfuric acid H2SO4:H3PO4=3:1 treating sapphire substrate for 1 minute, removing the oxide layer; in-situ annealing: loading the substrate into the MOCVD reaction chamber, annealing the sapphire under H2 atmosphere: 1050℃, 10 minutes; Si: 900℃, 5 minutes;

[0039] S2, parameter setting, temperature: 500-600℃, pressure: 100Torr, gas flow: TMGa 10sccm, NH3 1000sccm, H2 carrier gas 2000sccm;

[0040] S3, light operation: turning on the light source, light intensity 100mW / cm 2 , focusing the light on the electrified iron plate through the lens, and electrifying the iron plate, so that the iron plate can form a photoelectric effect with the light, so that the nitrogen gas in the reaction cavity can contact with the electrons released by the iron plate, so that the nitrogen gas in the reaction cavity mixes with the electrons;

[0041] S4, reaction growth: through the contact and mixing of electrified nitrogen gas and gallium solution, the electrified liquid gallium can be deposited and attached to the seed crystal to form a layer of gallium nitride film.

[0042] The working principle of example 1 is: in use, by conveying nitrogen gas into the inside of the reaction cavity 1, and the inside of the reaction cavity 1 contains liquid gallium at the bottom, the crystal seed piece 10 and the glass tray 9 can be immersed in the inside of the liquid gallium, then the conductive head 7 is moved to contact the conductive rod 8, so that the current can be transmitted to the inside of the conductive rod 8, at the same time, the iron sheet 3 is located in the inside of the reaction cavity 1, so that the iron sheet 3 can release ions to the inside of the reaction cavity 1, at the same time, the external light source can be turned on, and the light source can be focused on the surface of the iron sheet 3 through the lens 2, so that the inside of the reaction cavity 1 can carry out photoelectric reaction, so that the nitrogen gas in the inside of the reaction cavity 1 is electrified, at the same time, when the nitrogen gas is electrified, it can contact with the liquid gallium in the inside of the reaction cavity 1, so that the liquid gallium and the electrified nitrogen gas can be fused and settled on the surface of the glass tray 9, forming a layer of gallium nitride on the surface of the glass tray 9, completing the work, in use, the rotating shaft 11 is connected with the shaft rod in the external motor, so that the motor can drive the rotating shaft 11 to rotate when it is started, at the same time, the rotating shaft 11 is eccentrically installed at the bottom of the reaction cavity 1, so that the liquid gallium in the inside of the reaction cavity 1 can be shaken and waved when the rotating shaft 11 rotates, improving the uniformity of the contact between the liquid gallium and the nitrogen gas, completing the work.

[0043] Example 2

[0044] On the basis of embodiment 1, as Figure 2 shown, the reaction cavity 1 further includes a conducting mechanism 12, a solenoid valve 13 and a one-way valve 14, the conducting mechanism 12 is fixedly installed at the top end of the reaction cavity 1, the one-way valve 14 is fixedly installed at the side end of the conducting mechanism 12, and the solenoid valve 13 is fixedly installed at the top end of the one-way valve 14.

[0045] As Figure 3 shown, the conducting mechanism 12 includes a transfer device 15 and a transmission component 16, the transfer device 15 is fixedly installed at the bottom end of the transmission component 16, and the transfer device 15 can be supported to work.

[0046] As Figure 4 shown, the transfer device 15 includes an air guide pipe 17, a pumping device 18, a contact plate 19, an extension rod 20, a first reset spring 21, a concentration cavity 22, a movable rod 23, a sealing cover 24 and a flow guide pipe 25, the air guide pipe 17 is fixedly installed at the top front end of the concentration cavity 22, the flow guide pipe 25 is fixedly installed at the bottom end of the air guide pipe 17, the pumping device 18 is fixedly installed at both sides of the concentration cavity 22, the movable rod 23 is symmetrically and slidingly inserted into the rear end of the concentration cavity 22, the sealing cover 24 is fixedly installed at the front end of the movable rod 23, the extension rod 20 is fixedly installed at the rear end of the movable rod 23, the first reset spring 21 is symmetrically and fixedly installed between the extension rod 20 and the concentration cavity 22, and the contact plate 19 is fixedly installed at the top rear end of the extension rod 20. An arc slot is formed in the rear end of the contact plate 19, so that the contact cam 44 can be in contact with the contact plate 19.

[0047] As Figure 5 shown, the transmission component 16 includes a displacement device 26 and a transmission device 27, the displacement device 26 is slidingly inserted into the interior of the transmission device 27, and the displacement device 26 can be supported to slide.

[0048] As Figure 6 and Figure 7The displacement device 26 comprises a guide support 28, a displacement side plate 29, a support front frame 30, a central base plate 31, a first rack 32, a first gear 33, a second rack 34 and an extension base 35. The support front frame 30 is fixedly installed on the top of the front end of the central base plate 31. The guide supports 28 are equidistantly and fixedly installed on the two sides of the rear end of the central base plate 31. The displacement side plate 29 is slidably sleeved on the guide support 28. The extension base 35 is symmetrically and fixedly installed on the two sides of the rear end of the central base plate 31. The first gear 33 is rotatably installed on the end of the extension base 35 away from the central base plate 31. The second rack 34 is fixedly installed on the side end of the displacement side plate 29 close to the central base plate 31. The first rack 32 is slidably inserted into the interior of the extension base 35 and the central base plate 31. The second rack 34 and the first rack 32 are vertically misaligned, so that the second rack 34 can interfere with the first rack 32. Meanwhile, the T-shaped clamping key on the side end of the first rack 32 is displaced in the T-shaped clamping slot in the side end of the extension base 35, so that the first rack 32 can be linearly displaced. When the first rack 32 moves to the limit position towards the front end, the magnetic attraction piece on the side end of the first rack 32 can be in contact with the iron piece on the rear end of the extension base 35, so that the first rack 32 can be temporarily limited.

[0049] As Figure 8 The transmission device 27 comprises an ultraviolet lamp 36, a second return spring 37, a connecting rope 38, a wire wheel 39, a first photoelectric sensor 40, a second gear 41, a driving motor 42, a contact rod 43, a contact cam 44, a third gear 45, a second photoelectric sensor 46, a fourth gear 47, a fifth gear 48, a gas collecting cavity 49 and a positioning cavity 50. The ultraviolet lamp 36 is equidistantly and fixedly installed on the interior top end of the gas collecting cavity 49. The second return spring 37 is symmetrically and fixedly installed on the interior front end of the gas collecting cavity 49. The positioning cavity 50 is fixedly installed on the rear end top of the gas collecting cavity 49. The driving motor 42 is fixedly installed on the top end of the positioning cavity 50. The fourth gear 47 and the second gear 41 are fixedly installed on the bottom end of the driving motor 42, and the fourth gear 47 is located below the second gear 41. The fifth gear 48 is rotatably installed on the interior front end of the positioning cavity 50, and the fifth gear 48 is located in front of the driving motor 42. The wire wheel 39 is fixedly installed on the top end center of the fifth gear 48. The connecting rope 38 is fixedly installed on the outer ring of the wire wheel 39. The first photoelectric sensor 40 is fixedly installed on the interior front end of the positioning cavity 50. The second photoelectric sensor 46 is fixedly installed on the interior left side of the positioning cavity 50. The contact rod 43 is fixedly installed on the top end of the second gear 41. The third gear 45 is rotatably installed on the rear end of the gas collecting cavity 49, and the third gear 45 is located below the positioning cavity 50. The contact cam 44 is fixedly installed on the bottom end of the third gear 45. The ultraviolet lamp 36 is vertically aligned with the interior of the gas collecting cavity 49, so that the gas in the interior of the gas collecting cavity 49 can be photolyzed.

[0050] The rear end top of the air guide pipe 17 is connected with the front end of the air collecting cavity 49, the top end of the pumping device 18 is connected with the two sides of the air collecting cavity 49, the centralizing cavity 22 is fixedly installed at the bottom end of the air collecting cavity 49, the supporting front frame 30 is slidingly inserted into the internal top end of the air collecting cavity 49, the rear end of the central base plate 31 is connected with the front end of the connecting rope 38, the rear end of the second reset spring 37 is connected with the front end of the supporting front frame 30, the fourth gear 47 is engaged with the third gear 45, the fifth gear 48 is engaged with the second gear 41, the second rack 34 and the first rack 32 are both engaged with the first gear 33, the contact plate 19 is horizontally aligned with the contact cam 44, the rear end surface of the flow guide pipe 25 is provided with an air slot matched with the sealing cover 24, the two ends of the supporting front frame 30 are fixedly installed with clamping keys, and the two sides inside the air collecting cavity 49 are provided with clamping grooves, the side end of the first rack 32 is fixedly installed with a T-shaped clamping key, the side end of the extension base 35 close to the first gear 33 is provided with a T-shaped clamping groove, the side end of the first rack 32 away from the first gear 33 is fixedly installed with a magnetic sheet, and the rear end of the extension base 35 is fixedly installed with an iron plate, the width of the second rack 34 and the first rack 32 is 0.5 cm, the thickness of the first gear 33 is 1 cm, the tooth distribution angle of the second gear 41 is 180°, the transmission ratio of the third gear 45 and the fourth gear 47 is 1:2, and the first photoelectric sensor 40 and the second photoelectric sensor 46 are electrically connected with the pumping device 18.

[0051] In the implementation of the embodiment, when the reaction cavity 1 inside needs to transport nitrogen, the electromagnetic valve 13 can be opened, and the nitrogen outside the nitrogen valve is communicated through the one-way valve 14, so that when the electromagnetic valve 13 is opened, the nitrogen can enter the inside of the gas collection cavity 49 through the one-way valve 14, and then the driving motor 42 is opened, the second gear 41 and the fifth gear 48 are driven to rotate, until the connecting rope 38 pulls the center base plate 31 to move to the limit position inside the gas collection cavity 49, so that the first rack 32 can contact the rear end of the gas collection cavity 49, so that the first rack 32 can move to the front end along the outer circle of the first gear 33, so that the second rack 34 can be displaced to the side end, until the displacement side plate 29 contacts the inner wall of the gas collection cavity 49, and then when the second gear 41 is about to rotate to disengage from the fifth gear 48, the one-way valve 14 is filled with nitrogen inside the gas collection cavity 49, and then the electromagnetic valve 13 is closed to avoid nitrogen from being transported into the gas collection cavity 49 again. When the nitrogen fills the inside of the gas collection cavity 49, the second gear 41 can continue to rotate, so that the second gear 41 can disengage from the fifth gear 48, releasing the fifth gear 48. At this time, the elasticity of the second return spring 37 will pull the center base plate 31 to move to the front end inside the gas collection cavity 49, and the displacement side plate 29 and the center base plate 31 are respectively attached to both sides and the top and bottom of the inside of the gas collection cavity 49, so that the center base plate 31 and the displacement side plate 29 can push the nitrogen inside the gas collection cavity 49 into the inside of the flow guide pipe 25 through the gas guide pipe 17. At the same time, when the center base plate 31 moves to the limit position, the front end of the first rack 32 can contact the front end of the gas collection cavity 49, so that the first rack 32 can move to the rear end, so that the first gear 33 can drive the second rack 34 to rotate in the opposite direction. The displacement side plate 29 can move to the end close to the center base plate 31 on the displacement side plate 29, so that the displacement side plate 29 can disengage from the inner wall of the gas collection cavity 49. Then, the sealing cover 24 is in a state of separation from the flow guide pipe 25, so that the gas can enter the inside of the concentration cavity 22. At the same time, the second gear 41 can drive the contact rod 43 to rotate to contact the second photoelectric sensor 46, and the second photoelectric sensor 46 is electrically connected with the pumping device 18, so that the pumping device 18 can be started. The pumping device 18 is connected between the concentration cavity 22 and the gas collection cavity 49 through the gas pipe, so that when the pumping device 18 is started, the gas in the concentration cavity 22 can flow back to the inside of the gas collection cavity 49. Then, when the second gear 41 rotates to contact the first photoelectric sensor 40, the pumping device 18 can be powered off, so that the gas in the concentration cavity 22 can be transported to the inside of the gas collection cavity 49. At this time, the teeth on the second gear 41 can again rotate to engage with the fifth gear 48, so that when the second gear 41 rotates again, it can drive the fifth gear 48 to rotate, and at this time, the fifth gear 48 can drive the wire wheel 39 to rotate,The line wheel 39 can pull the center base plate 31 back to the rear end inside the gas collecting cavity 49 through the connecting rope 38, and the supporting frame 30 can be displaced in the clamping slot inside the gas collecting cavity 49 through the clamping keys at both ends of the supporting frame 30, so that the center base plate 31 can move in a straight line. At the same time, when the second gear 41 rotates one turn, the fourth gear 47 can be driven to rotate one turn at the same time, so that the third gear 45 can be driven to rotate half a turn. At this time, when the second gear 41 continues to rotate, the fourth gear 47 can drive the third gear 45 to rotate, so that the contact cam 44 can be rotated to contact the contact plate 19, and the contact plate 19 and the movable rod 23 can be moved to the front end, so that the sealing cover 24 can close the air slot of the flow guide pipe 25. Subsequently, when the teeth on the second gear 41 pass through the fifth gear 48 again, the second reset spring 37 can drive the center base plate 31 to move to the front end again, so that the gas can enter the inside of the gas guide pipe 17 again. At this time, since the sealing cover 24 closes the square hole at the side end of the flow guide pipe 25, the gas in the gas collecting cavity 49 can be discharged into the inside of the reaction cavity 1 through the gas guide pipe 17 and the flow guide pipe 25, and the circulation treatment of the gas is completed. When the contact cam 44 rotates to pass through the contact plate 19, the extension rod 20 can be moved and reset by the elasticity of the first reset spring 21, so that the sealing cover 24 can be separated from the flow guide pipe 25 again, and the gas in the gas collecting cavity 49 can flow into the inside of the collecting cavity 22 again, and the work is completed. When the gas enters the reaction cavity 1, the ultraviolet light emitted by the ultraviolet light lamp 36 can pre-decompose the gas into active N2, thereby improving the utilization rate of the nitrogen source. At the same time, when the second gear 41 rotates one turn, the gas in the gas collecting cavity 49 can enter the inside of the collecting cavity 22 through the gas guide pipe 17, so that when the pumping device 18 is started, the gas can be flowed back to the inside of the gas collecting cavity 49 for secondary treatment. Subsequently, when the second gear 41 rotates two turns, the contact cam 44 can be driven to rotate to contact the contact plate 19 through the third gear 45, so that the sealing cover 24 can close the square slot at the side end of the flow guide pipe 25. When the center base plate 31 and the displacement side plate 29 are displaced again, the gas can enter the inside of the reaction cavity 1 through the gas guide pipe 17 and the flow guide pipe 25, and the work is completed.

[0052] Although embodiments of the present application have been shown and described, it is to be understood that various modifications, substitutions, replacements and changes can be made to these embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the appended claims and their equivalents.

Claims

1. A device for promoting the growth of gallium nitride materials by the photoelectric effect, comprising a reaction chamber (1), a lens (2) fixedly mounted on the top of the reaction chamber (1), a heating assembly (5) fixedly mounted on the outside and bottom of the reaction chamber (1), a rotating shaft (11) fixedly mounted on the bottom of the reaction chamber (1), and a seed crystal piece (10) fixedly mounted on the bottom of the interior of the reaction chamber (1), characterized in that: A glass tray (9) is placed on the top of the seed crystal sheet (10); an insulating layer (4) is fixedly installed inside the side end of the reaction chamber (1); a conductive rod (8) is fixedly installed inside the insulating layer (4); an iron sheet (3) is fixedly installed on one end of the conductive rod (8) close to the reaction chamber (1); a supporting chamber (6) is fixedly installed on one end of the insulating layer (4) away from the reaction chamber (1); and a conductive head (7) is fixedly installed inside the supporting chamber (6).

2. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 1, characterized in that: The reaction chamber (1) further comprises a conduction mechanism (12), an electromagnetic valve (13) and a one-way valve (14); the conduction mechanism (12) is fixedly mounted on the top end of the reaction chamber (1); the one-way valve (14) is fixedly mounted on the side end of the conduction mechanism (12); and the electromagnetic valve (13) is fixedly mounted on the top end of the one-way valve (14).

3. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 2, characterized in that: The transmission mechanism (12) comprises a transfer device (15) and a transmission component (16), wherein the transfer device (15) is fixedly mounted on the bottom end of the transmission component (16).

4. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 3, characterized in that: The transfer device (15) includes an air guide tube (17), a pumping device (18), a contact plate (19), an extension rod (20), a first return spring (21), a central cavity (22), a movable rod (23), a sealing cover (24) and a flow guide pipe (25), wherein the air guide tube (17) is fixedly mounted at the top front end of the central cavity (22), the flow guide pipe (25) is fixedly mounted at the bottom end of the air guide tube (17), the pumping device (18) is fixedly mounted on both sides of the central cavity (22), the movable rod (23) is symmetrically slidably inserted into the rear end of the central cavity (22), the sealing cover (24) is fixedly mounted at the front end of the movable rod (23), the extension rod (20) is fixedly mounted at the rear end of the movable rod (23), the first return spring (21) is symmetrically fixedly mounted between the extension rod (20) and the central cavity (22), and the contact plate (19) is fixedly mounted at the rear end top of the extension rod (20).

5. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 4, characterized in that: The transmission component (16) comprises a displacement device (26) and a transmission device (27), and the displacement device (26) is slidably inserted into the transmission device (27).

6. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 5, characterized in that: The displacement device (26) comprises a guide support rod (28), a displacement side plate (29), a support front frame (30), a center base plate (31), a first rack (32), a first gear (33), a second rack (34) and an extension base (35), wherein the support front frame (30) is fixedly mounted on the front end top of the center base plate (31), the guide support rod (28) is fixedly mounted on the two rear ends of the center base plate (31) at equal distances, the displacement side plate (29) is slidably sleeved on the guide support rod (28), the extension base (35) is symmetrically fixedly mounted on the two rear ends of the center base plate (31), the first gear (33) is rotatably mounted on one end of the extension base (35) away from the center base plate (31), the second rack (34) is fixedly mounted on the side end of the displacement side plate (29) close to the center base plate (31), and the first rack (32) is slidably inserted into the interior of the extension base (35) and the center base plate (31).

7. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 6, characterized in that: The transmission device (27) includes an ultraviolet lamp (36), a second return spring (37), a connecting rope (38), a reel (39), a first photoelectric sensor (40), a second gear (41), a driving motor (42), a contact rod (43), a contact cam (44), a third gear (45), a second photoelectric sensor (46), a fourth gear (47), a fifth gear (48), a gas collecting cavity (49) and a positioning cavity (50), wherein the ultraviolet lamp (36) is fixedly mounted at an equidistant position on the inner top of the gas collecting cavity (49), the second return spring (37) is fixedly mounted at a symmetrical position on the inner front end of the gas collecting cavity (49), the positioning cavity (50) is fixedly mounted at the rear end top of the gas collecting cavity (49), the driving motor (42) is fixedly mounted at the top of the positioning cavity (50), the fourth gear (47) and the second gear (41) are fixedly mounted at the inner top of the driving motor (42), and the positioning cavity (50) is fixedly mounted at the inner top of the gas collecting cavity (49). The bottom end of the positioning cavity (50) is provided with a fourth gear (47) and a fourth gear (47) located below the second gear (41). The fifth gear (48) is rotatably mounted on the front end of the interior of the positioning cavity (50), and the fifth gear (48) is located at the front end of the driving motor (42). The wire wheel (39) is fixedly mounted on the top center of the fifth gear (48). The connecting rope (38) is fixedly mounted on the outer ring of the wire wheel (39). The first photoelectric sensor (40) is fixedly mounted on the front end of the interior of the positioning cavity (50). The second photoelectric sensor (46) is fixedly mounted on the left side of the interior of the positioning cavity (50). The contact rod (43) is fixedly mounted on the top end of the second gear (41). The third gear (45) is rotatably mounted on the rear end of the gas collecting cavity (49), and the third gear (45) is located below the positioning cavity (50). The contact cam (44) is fixedly mounted on the bottom end of the third gear (45).

8. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 7, characterized in that: The top of the rear end of the air guide tube (17) is connected to the front end of the gas collecting cavity (49), the top of the pumping device (18) is connected to both sides of the gas collecting cavity (49), the central cavity (22) is fixedly installed at the bottom end of the gas collecting cavity (49), the support front frame (30) is slidably inserted into the internal top end of the gas collecting cavity (49), the rear end of the central substrate (31) is connected to the front end of the connecting rope (38), the rear end of the second return spring (37) is connected to the front end of the support front frame (30), the fourth gear (47) is engaged with the third gear (45), the fifth gear (48) is engaged with the second gear (41), and the second rack (34) and the first rack (32) are both engaged with the first gear (33).

9. The device for promoting the growth of gallium nitride materials by photoelectric effect according to claim 8, characterized in that: The contact plate (19) is horizontally aligned with the contact cam (44); a slot is provided on the rear end surface of the guide pipe (25) to match the sealing cover (24); keys are fixedly installed at both ends of the support front frame (30); and slots are provided on both sides of the interior of the gas collecting cavity (49); a T-shaped key is fixedly installed on the side end of the first rack (32); a T-shaped slot is provided on the side end of the extension base (35) close to the first gear (33); and the first rack (32) is away from the first gear (33). A magnetic sheet is fixedly mounted on the side end, and an iron plate is fixedly mounted on the rear end of the extension base (35). The widths of the second rack (34) and the first rack (32) are both 0.5 cm, the thickness of the first gear (33) is 1 cm, the tooth distribution angle on the second gear (41) is 180°, the transmission ratio of the third gear (45) to the fourth gear (47) is 1:2, and the first photoelectric sensor (40) and the second photoelectric sensor (46) are evenly electrically connected to the pumping device (18).

10. A method for using a device for promoting the growth of gallium nitride materials by the photoelectric effect, using the device for promoting the growth of gallium nitride materials by the photoelectric effect according to claim 9, characterized in that: It includes the following steps: S1. Substrate pretreatment, chemical cleaning: ultrasonically clean the substrate with acetone, ethanol, and deionized water for 10 minutes each to remove organic matter and particles, and soak it in hydrofluoric acid or treat it with hot sulfuric acid for 1 minute to remove the oxide layer; in-situ annealing: load the substrate into the MOCVD reaction chamber and anneal it at high temperature in a H2 atmosphere; S2, parameter settings, temperature: 500-600 ° C, pressure: 100 Torr, gas flow: TMGa10sccm, NH31000sccm, H2 carrier gas 2000sccm; S3, light irradiation operation: Turn on the light source and focus the light on the electrified iron plate through the lens. The iron plate is electrified, so that the iron plate and the light form a photoelectric effect, so that the nitrogen inside the reaction chamber can come into contact with the electrons released by the iron plate, so that the nitrogen inside the reaction chamber is mixed with the electrons; S4. Reaction growth: By contacting and mixing charged nitrogen with gallium solution, the charged liquid gallium can be deposited and attached to the seed crystal to form a gallium nitride film.

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