Material measurement method and device, electronic equipment and storage medium

Abstract

The application provides a material measurement method and device, electronic equipment and storage medium. The method comprises the following steps: obtaining an X-ray reflectivity spectrum of a material to be measured; physically modeling the material to be measured to obtain a gradient structure model of the material to be measured; introducing the X-ray reflectivity spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting, and analyzing to obtain material information of the material to be measured. Based on the method, the material information of a material with a micron-level thickness can be analyzed by using an XRR technology.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor material measurement, and in particular, to a material measurement method and device, an electronic device, and a storage medium. BACKGROUND

[0002] Currently, common material measurement methods in the prior art include optical ellipsometry, Rutherford backscattering spectrometer (RBS), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy analysis, and electron energy loss spectrometer. However, the optical ellipsometry and Rutherford backscattering technology have limited measurement depth and cannot penetrate amorphous hard mask materials of several microns. The Fourier transform infrared spectroscopy and Raman spectrometer can only represent the material density in an indirect manner and cannot directly measure the material. The electron energy loss spectrometer is destructive to the material and sample preparation is also time-consuming. SUMMARY

[0003] Therefore, the embodiments of the present application provide a material measurement method and device, an electronic device, and a storage medium, which can obtain material information of a material with a micron level thickness by using XRR technology.

[0004] The first aspect of the embodiments of the present application provides a material measurement method, which includes: obtaining an X-ray reflectivity spectrum of a material to be measured; physically modeling the material to be measured to obtain a gradient structure model of the material to be measured; and importing the X-ray reflectivity spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting to obtain material information of the material to be measured.

[0005] In a possible implementation, the step of physically modeling the material to be measured to obtain the gradient structure model of the material to be measured includes: constructing a geometric structure of the material to be measured as a multilayer gradient structure; and configuring, according to a preset analytical function, a material attribute corresponding to each layer structure in the multilayer gradient structure based on the multilayer gradient structure.

[0006] In a possible implementation, before the step of configuring, according to a preset analytical function, a material attribute corresponding to each layer structure in the multilayer gradient structure based on the multilayer gradient structure, the method further includes: determining the preset analytical function according to a semiconductor process type of the material to be measured, wherein the analytical function is any one of a piecewise function, a linear function, an exponential function, and a polynomial function.

[0007] In a possible implementation, the step of obtaining the X-ray reflectivity spectrum of the material to be measured comprises: obtaining type information of a light source and a detector used by the X-ray measurement device; determining a scanning mode of the X-ray measurement device for scanning the material to be measured according to the type information of the light source and the detector; and starting the X-ray measurement device to scan the material to be measured according to the scanning mode, to obtain the X-ray reflectivity spectrum of the material to be measured.

[0008] In a possible implementation, the step of determining the scanning mode of the X-ray measurement device for scanning the material to be measured according to the type information of the light source and the detector comprises: if the type of the light source in the type information is a parallel beam light source and the type of the detector is a zero-dimensional, one-dimensional, or two-dimensional detector, determining that the scanning mode of the X-ray measurement device is a symmetric scanning mode; or if the type of the light source in the type information is a converging beam light source and the type of the detector is a two-dimensional detector, determining that the scanning mode of the X-ray measurement device is an asymmetric scanning mode.

[0009] In a possible implementation, before the step of starting the X-ray measurement device to scan the material to be measured according to the scanning mode, to obtain the X-ray reflectivity spectrum of the material to be measured, the method further comprises: setting a step scanning parameter of the X-ray measurement device according to a current material measurement condition, wherein the step scanning parameter comprises a scanning step length, a scanning start angle, and a maximum scanning angle.

[0010] In a possible implementation, before the step of importing the X-ray reflectivity spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting, to obtain the material information of the material to be measured, the method further comprises: performing angle scaling preprocessing on an abscissa of the X-ray reflectivity spectrum according to an angle of a goniometer.

[0011] A second aspect of the embodiment of the present application provides a material measurement device, which comprises: an obtaining module configured to obtain an X-ray reflectivity spectrum of a material to be measured; a modeling module configured to perform physical modeling on the material to be measured, to obtain a gradient structure model of the material to be measured; and a measurement module configured to import the X-ray reflectivity spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting, to obtain material information of the material to be measured.

[0012] A third aspect of the embodiment of the present application provides an electronic device, which comprises a memory, a processor, and a computer program stored in the memory and capable of running on the electronic device, and the processor implements each step of the material measurement method provided in the first aspect when executing the computer program.

[0013] The fourth aspect of the embodiments of the present application provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the steps of the material measurement method provided in the first aspect.

[0014] The fifth aspect of the embodiments of the present application provides a computer program product, which, when running on an electronic device, enables the electronic device to implement the steps of the material measurement method provided in the first aspect.

[0015] The material measurement method, device, electronic device and storage medium provided by the embodiments of the present application have the following beneficial effects: the X-ray reflectivity spectrum of the material to be measured is obtained; the material to be measured is physically modeled to obtain a gradient structure model of the material to be measured; the X-ray reflectivity spectrum and the gradient structure model are introduced into a preset XRR simulation calculation model for fitting, and material information of the material to be measured is obtained by analysis. The method can obtain the material information of the material with micron-level thickness by using the characteristics that the X-ray has strong penetration and the penetration depth can be changed with the incident angle of the light source. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0017] Figure 1 The implementation flowchart of the material measurement method provided by the embodiments of the present application is shown.

[0018] Figure 2 The schematic diagram of the gradient structure model in the material measurement method provided by the embodiments of the present application is shown.

[0019] Figure 3 The density distribution diagram of the material to be measured provided by the embodiments of the present application is shown.

[0020] Figure 4 The implementation flowchart of the physical modeling of the material to be measured in the material measurement method provided by the embodiments of the present application is shown.

[0021] Figure 5 The implementation flowchart of the X-ray reflectivity spectrum of the material to be measured in the material measurement method provided by the embodiments of the present application is shown.

[0022] Figure 6 The schematic diagram of the symmetric scanning mode and the asymmetric scanning mode in the material measurement method provided by the embodiments of the present application is shown.

[0023] Figure 7 A basic structure block diagram of a material measurement device is provided for embodiments of the present application.

[0024] Figure 8 A basic structure block diagram of an electronic device is provided for embodiments of the present application. DETAILED DESCRIPTION

[0025] In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular architectures, techniques, etc. in order to provide a thorough understanding of embodiments of the present application. However, it will be apparent to those skilled in the art that the present application can be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known methods, devices, circuits, and

[0026] It will be understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0027] It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0028] As used in the description of the application and the appended claims, the term "if' can be interpreted to mean "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrase "if it is determined" or "if [a described condition or event] is detected" can be interpreted to mean "upon determining" or "in response to determining" or "upon [the described condition or event] being detected" or "in response to [the described condition or event] being detected," depending on the context.

[0029] In addition, the description in the specification and the appended claims of this application use the term "first," "second," "third," etc. to refer to different elements, components, steps, etc. only for the purpose of distinguishing between different elements, components, steps, etc. and does not imply or suggest any relative importance of the elements, components, steps, etc.

[0030] Reference within the specification of this application to "one embodiment" or "some embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in additional embodiments," and so on, in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily referring to some, but not all, embodiments. The terms "including," "comprising," "having," and variations thereof are meant to encompass the items listed thereafter, but do not exclude other items from also being present. "Multiple" means two or more.

[0031] For the purpose of making the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely intended to explain the present application, and are not intended to limit the present application.

[0032] In a semiconductor manufacturing process, XRR (X-ray Reflectivity) technology is a surface analysis method for analyzing film thickness, roughness and density by using the reflection and refraction of X-rays at the film surface and interface and the interference of the reflected light. The surface structure of the sample can be analyzed by the intensity of the X-ray reflected at the sample surface, and it is mainly used for measuring the thickness, density, surface roughness and other parameters of the film.

[0033] Amorphous hard mask has high light transmittance, which is beneficial to the measurement of overlay error in photolithography. It has high hardness, high etching selectivity, high plasma durability and easy removal by oxygen, and other advantages compared with other materials. Therefore, amorphous hard mask material is widely used as a hard mask in semiconductor photolithography process.

[0034] The present application aims to provide a material measurement method, device, electronic equipment and storage medium, which is mainly applied to measure amorphous hard mask material. By using the strong penetration and variable penetration depth with the incident angle of the light source, the material information of the micron level thickness material is analyzed by XRR technology. It should be noted that the present application can also be applied to crystalline materials or non-crystalline materials.

[0035] In some embodiments of the present application, please refer to Figure 1 , Figure 1 The implementation flowchart of a material measurement method provided by the embodiments of the present application is shown in FIG. 1. As shown in FIG. 1, the method can specifically include steps S11 to S13. Figure 1

[0036] S11: Obtain the X-ray reflectivity spectrum of the material to be measured. ​

[0037] In this embodiment, the X-ray reflectivity spectrum of the material to be measured is obtained by an X-ray measurement device. Specifically, the X-ray measurement device can be an XRR spectrometer, which is composed of an X-ray light source, a detector and a sample stage. In a specific embodiment, the XRR spectrometer uses a copper target X-ray light source, a two-dimensional area detector is used as the detector, and a rotatable sample stage is used.

[0038] S12: Physically modeling the material to be measured to obtain a gradient structure model of the material to be measured.

[0039] In this embodiment, please refer to Figure 2 , Figure 2 a schematic diagram of the gradient structure model in the material measurement method provided by the embodiment of the present application. As Figure 2 shown, when physically modeling the material to be measured, the material to be measured can be constructed as a geometric structure with fixed film layer thickness and N layers of slices. It can be understood that the number of slice layers N can be adjusted according to actual measurement requirements. For each layer structure in the geometric structure, a corresponding specific material property is set, so that a gradient structure model for characterizing the material to be measured is obtained. It can be understood that in the gradient structure model, the material properties of each layer structure include but are not limited to material chemical formula, thickness, surface roughness, density, etc.

[0040] S13: Introducing the X-ray reflectivity spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting, and analyzing to obtain material information of the material to be measured.

[0041] In this embodiment, the process of XRR simulation calculation model fitting is specifically: based on the X-ray reflectivity spectrum and the gradient structure model of the material to be measured, using the XRR simulation calculation model, calling an optimization algorithm to automatically find the optimal solution of the model parameters through iterative calculation. The optimization algorithm includes but is not limited to genetic algorithm, simulated annealing algorithm, nonlinear least squares method, etc. The XRR simulation calculation model is a theoretical calculation model disclosed in the prior art, which will not be described here. For example, in a specific embodiment, please refer to Figure 3 , Figure 3 a density distribution diagram of the material to be measured provided by the embodiment of the present application. The density distribution diagram is material information reflecting the density of the material to be measured obtained by fitting and analyzing the XRR simulation calculation model. In the density distribution diagram, the abscissa represents the material thickness, and the ordinate represents the material density. Based on the density distribution diagram, the change trend of the material density can be quantitatively analyzed, and the growth quality of the material to be measured can be quantitatively characterized.

[0042] It can be seen from the above that the material measurement method provided in the embodiments of the present application obtains an X-ray reflectivity spectrum of a material to be measured; performs physical modeling on the material to be measured to obtain a gradient structure model of the material to be measured; imports the X-ray reflectivity spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting, and analyzes to obtain material information of the material to be measured. The method uses the XRR technology to measure the material to be measured, and based on the strong penetration and the characteristic that the penetration depth changes with the incident angle of the X-ray, the material information of the material with micron-level thickness can be analyzed to realize quantitative and qualitative analysis of the material to be measured.

[0043] In some embodiments of the present application, please refer to Figure 4 , Figure 4 An implementation flowchart of the physical modeling of the material to be measured in the material measurement method provided in the embodiments of the present application is shown in FIG. 2. As shown in FIG. 2, the implementation flowchart can specifically include steps S21 to S22. Figure 4

[0044] S21: Constructing the geometric structure of the material to be measured as a multi-layer gradient structure.

[0045] S22: Based on the multi-layer gradient structure, setting the material properties corresponding to each layer structure in the multi-layer gradient structure according to a preset analytical function.

[0046] In the embodiment, the physical modeling of the material includes the geometric structure and the material properties. The gradient structure model can be defined for specific physical parameters. For example, based on the relationship between the density of the material and the thickness, a density gradient structure can be constructed. When performing the physical modeling, the thickness of the material to be measured is sliced into N layers, and the geometric structure of the material to be measured is constructed as a multi-layer gradient structure. Further, based on the constructed multi-layer gradient structure, the material properties corresponding to each layer structure in the multi-layer gradient structure can be set according to a preset analytical function, and the analytical function is used to represent the gradient characteristics of the material properties in the gradient structure model, such as the relationship between the density and the thickness in the density gradient structure.

[0047] ​In some embodiments of the present application, the gradual change characteristics of the material properties in the gradient structure model can support different types of analytical functions. Specifically, the analytical functions include but are not limited to piecewise functions, linear functions, exponential functions, polynomial functions, etc. It can be understood that the piecewise function is applicable when the material growth process condition has a mutation. The selected analytical function of the gradient structure model is directly related to the semiconductor process type of the material to be measured. In the present embodiment, the analytical function used to set the material properties corresponding to each layer structure in the gradient structure model can be determined according to the semiconductor process type of the material to be measured, which is any one of a piecewise function, a linear function, an exponential function, and a polynomial function. For example, if the density gradually increases or decreases with the increase of the thickness, a linear function can be selected to set the material properties corresponding to each layer structure in the gradient structure model; if the density first decreases and then increases with the increase of the thickness, a quadratic function can be selected to set the material properties corresponding to each layer structure in the gradient structure model. It can be understood that the quadratic function is a polynomial function with the highest order of the independent variable being two. The present embodiment can determine different types of analytical functions for setting the material properties corresponding to each layer structure in the gradient structure model according to different semiconductor process types, which realizes the qualitative and intuitive observation of the differences between materials in different processes, and at the same time, the quantitative analysis of the change trend of the material properties.

[0048] In some embodiments of the present application, please refer to Figure 5 , Figure 5 An implementation flowchart for acquiring the X-ray reflectivity spectrum of the material to be measured in the material measurement method provided by the present embodiment is shown in FIG. 3. Figure 5 As shown in FIG. 3, the method can specifically include steps S31 to S33.

[0049] S31: Acquire the type information of the light source and the detector used by the X-ray measurement device;

[0050] S32: Determine the scanning mode of the X-ray measurement device for scanning the material to be measured according to the type information of the light source and the detector;

[0051] S33: Start the X-ray measurement device to scan the material to be measured according to the scanning mode, and obtain the X-ray reflectivity spectrum of the material to be measured.

[0052] In the embodiment, the X-ray reflectivity spectrum of the material to be measured can be acquired by means of step scanning. According to the types of the light source and the detector, different scanning modes can be selected to acquire the X-ray reflectivity spectrum. In a specific implementation, by reading the device information of the X-ray measuring device, the type information of the light source and the detector used by the X-ray measuring device can be acquired. The scanning modes include a symmetric scanning mode and an asymmetric scanning mode. According to the types of the light source and the detector, one of the symmetric scanning mode and the asymmetric scanning mode can be determined as the scanning mode of the X-ray measuring device. After the scanning mode is determined, the X-ray measuring device is started to scan the material to be measured according to the scanning mode, so as to obtain the X-ray reflectivity spectrum of the material to be measured.

[0053] In some embodiments of the present application, the types of the light source specifically include a parallel beam light source and a convergent beam light source, and the types of the detector specifically include a zero-dimensional detector, a one-dimensional detector and a two-dimensional detector. In the embodiment, the parallel beam light source can be matched with any one of the zero-dimensional detector, the one-dimensional detector and the two-dimensional detector to acquire the X-ray reflectivity spectrum, and the convergent beam light source needs to be matched with the two-dimensional detector to acquire the X-ray reflectivity spectrum. Therefore, when different scanning modes are selected to acquire the X-ray reflectivity spectrum according to the types of the light source and the detector, specifically, please refer to Figure 6 , Figure 6 The schematic diagrams of the symmetric scanning mode and the asymmetric scanning mode in the material measurement method provided by the embodiments of the present application are shown in Figure 6 . As shown in (a) of Figure 6 , the light source and the detector are relatively symmetrically angled to perform step scanning motion, which is the symmetric scanning mode. As shown in (b) of Figure 6 , the detector is fixed, and the light source performs step scanning motion, which is the asymmetric scanning mode. In the type information of the light source and the detector used by the X-ray measuring device, when the type of the light source is the parallel beam light source and the type of the detector is the zero-dimensional, one-dimensional or two-dimensional detector, the scanning mode of the X-ray measuring device can be determined as the symmetric scanning mode. When the type of the light source is the convergent beam light source and the type of the detector is the two-dimensional detector, the scanning mode of the X-ray measuring device can be determined as the asymmetric scanning mode.

[0054] In some embodiments of the present application, before starting the X-ray measurement device to scan the material to be measured according to the determined scan mode, the step scan parameters of the X-ray measurement device need to be set according to the current material measurement conditions. The material measurement conditions include the device state of the X-ray measurement device, the live material to be measured, and the required resolution of the reflection spectrum, and the device state of the X-ray measurement device includes the angle and position of the light source and the detector, and the live material to be measured includes the thickness and density of the material. The step scan parameters include but are not limited to the scan step, the scan starting angle, and the maximum scan angle.

[0055] In the present embodiment, the scan step can be set according to the required resolution of the obtained X-ray reflection spectrum, wherein the smaller the step, the better the resolution of the obtained X-ray reflection spectrum. In addition, the resolution of the X-ray reflection spectrum can also be improved by setting the distance of the detector in the X-ray measurement device.

[0056] In the present embodiment, the light source scan starting angle can be set according to the critical angle value of the material. If the light source scan initial angle is lower than the critical angle value of the measured material, the critical angle value can be used as a reference value to set the light source initial angle. The critical angle value of the material can be calculated by the following formula:

[0057]

[0058]

[0059] wherein, represents the critical angle of the material, represents the classical electron radius, represents the density of the material, represents the X-ray wavelength, represents the i-th atomic number, represents the molar proportion coefficient of the atom, represents the molar mass of the i-th atom, represents the Avogadro constant. represents the atomic scattering factor.

[0060] In the present embodiment, the maximum scan angle is related to the depth of the material penetrated by the X-ray, and therefore the maximum scan angle can be optimized according to the thickness of the material, wherein the smaller the thickness of the material, the larger the angle range that needs to be set for the scan angle. For the case where the X-ray measurement device scans the material in an asymmetric scan mode, since the detector is fixed at a suitable angle and the light source is step scanned, the scan angle of the light source can start from zero degrees, and the maximum scan angle can be set according to the solid angle of the detector.

[0061] In some embodiments of the present application, before the X-ray reflectivity spectrum and the gradient structure model are introduced into the XRR simulation calculation model for fitting, the X-ray reflectivity spectrum data needs to be preprocessed. Specifically, the X-ray reflectivity spectrum is angle-scaled in the horizontal coordinate according to the angle of the goniometer. Through the angle-scaling preprocessing, a relationship curve between the X-ray reflectivity angle and the X-ray intensity can be obtained, which is the X-ray reflectivity spectrum.

[0062] It can be understood that the size of the serial number of each step in the above embodiments does not mean the order of execution. The execution order of each process should be determined according to its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0063] In some embodiments of the present application, please refer to Figure 7 , Figure 7 A basic structure block diagram of a material measurement device is provided in the embodiments of the present application. In the embodiments, the units included in the device are used to execute each step in the above method embodiments. For details, please refer to the related description in the above method embodiments. For the convenience of description, only the parts related to the present embodiment are shown. As shown in Figure 7 , the material measurement device includes an acquisition module 71, a modeling module 72, and a measurement module 73. Among them: the acquisition module 71 is configured to acquire the X-ray reflectivity spectrum of the material to be measured. The modeling module 72 is configured to physically model the material to be measured to obtain a gradient structure model of the material to be measured. The measurement module 73 is configured to introduce the X-ray reflectivity spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting, and to analyze to obtain material information of the material to be measured.

[0064] It should be understood that the above material measurement device corresponds to the above material measurement method one by one, which will not be described here.

[0065] In some embodiments of the present application, please refer to Figure 8 , Figure 8 A basic structure block diagram of an electronic device is provided in the embodiments of the present application. As shown in Figure 8 , the electronic device 8 of the embodiment includes a processor 81, a memory 82, and a computer program 83 stored in the memory 82 and executable on the processor 81, such as a material measurement method program. The processor 81 executes the computer program 83 to implement the steps in each of the above material measurement method embodiments. Alternatively, the processor 81 executes the computer program 83 to implement the functions of each module in the corresponding embodiment of the above material measurement device. For details, please refer to the related description in the embodiments, which will not be described here.

[0066] For example, the computer program 83 can be divided into one or more modules (units) for performing various steps in the above-described method embodiments. The one or more modules are stored in the memory 82 and executed by the processor 81 to complete the present application. The one or more modules can be a series of computer program instruction segments capable of completing a specific function, which are used to describe the execution process of the computer program 83 in the electronic device 8.

[0067] The electronic device can include, but is not limited to, the processor 81, the memory 82. Those skilled in the art can understand that Figure 8 The electronic device 8 is only an example and does not constitute a limitation on the electronic device 8, and can include more or fewer components than those shown, or combine certain components, or different components, for example, the electronic device can also include an input / output device, a network access device, a bus, etc.

[0068] The processor 81 can be a central processing unit (CPU), and can also be other general-purpose processors, digital signal processors (DSP), application specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor.

[0069] The memory 82 can be an internal storage unit of the electronic device 8, such as a hard disk or a memory of the electronic device 8. The memory 82 can also be an external storage device of the electronic device 8, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. Further, the memory 82 can include both the internal storage unit and the external storage device of the electronic device 8. The memory 82 is used to store the computer program and other programs and data required by the electronic device. The memory 82 can also be used to temporarily store data that has been output or will be output.

[0070] It should be noted that the information interaction, execution process and the like between the above apparatuses / units are based on the same concept as the method embodiments of the present application, and the specific functions and the brought technical effects can be referred to the method embodiments part, which will not be repeated here.

[0071] The embodiments of the present application further provide a computer readable storage medium, which stores a computer program. The computer program is executed by a processor to implement the steps in each of the above method embodiments. In the embodiments, the computer readable storage medium can be nonvolatile or volatile.

[0072] The embodiments of the present application provide a computer program product. When the computer program product is run on a mobile terminal, the mobile terminal can implement the steps in each of the above method embodiments.

[0073] Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the above-mentioned division of each functional unit and module is exemplified, and in actual application, the above-mentioned functions can be completed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to complete all or part of the above-described functions. Each functional unit and module in the embodiments can be integrated in one processing unit, or each unit can exist physically, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of software functional unit. In addition, the specific name of each functional unit and module is only for convenient distinction, and does not limit the protection scope of the present application. The specific working process of the units and modules in the apparatus can be referred to the corresponding process in the above method embodiments, which will not be repeated here.

[0074] The integrated module / unit, if implemented in the form of a software functional unit and sold or used as an independent product, can be stored in a computer readable storage medium. Based on such understanding, all or part of the processes in the above-mentioned embodiment methods can also be implemented by a computer program instructing related hardware, and the computer program can be stored in a computer readable storage medium. The computer program can implement the steps of each method embodiment when executed by a processor. The computer program includes computer program code, which can be in the form of source code, object code, executable files or some intermediate forms. The computer readable medium can include any entity or device capable of carrying the computer program code, recording medium, U disk, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signal, telecommunication signal and software distribution medium, etc. It should be noted that the contents included in the computer readable medium can be appropriately increased or decreased according to the requirements of legislation and patent practice in the jurisdiction, for example, in some jurisdictions, according to legislation and patent practice, the computer readable medium does not include electrical carrier signals and telecommunication signals.

[0075] In the above embodiments, the description of each embodiment has its own focus, and the parts not described or recorded in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0076] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacements for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A material measurement method, characterized in that, include: Obtain the X-ray reflectance spectrum of the material to be measured; The geometric structure of the material to be measured is constructed as a multi-layer gradient structure. An analytical function is determined according to the semiconductor process type of the material to be measured. The material properties corresponding to each layer of the multi-layer gradient structure are configured according to the analytical function to obtain the gradient structure model of the material to be measured. The analytical function can be any one of piecewise function, linear function, exponential function, and polynomial function. The X-ray reflection spectrum and the gradient structure model are imported into a preset XRR simulation calculation model for fitting, and the material information of the material to be measured is obtained by analysis.

2. The material measurement method according to claim 1, characterized in that, The steps for obtaining the X-ray reflectance spectrum of the material to be measured include: Obtain information on the type of light source and detector used in the X-ray measurement equipment; The scanning mode of the X-ray metrology equipment for scanning the material to be measured is determined based on the type information of the light source and detector. The X-ray measurement equipment is activated to scan the material to be measured according to the scanning mode, and the X-ray reflection spectrum of the material to be measured is obtained.

3. The material measurement method according to claim 2, characterized in that, The step of determining the scanning mode of the X-ray metrology equipment for scanning the material to be measured based on the type information of the light source and detector includes: If the type of light source in the type information is a parallel beam light source and the type of detector is a zero-dimensional, one-dimensional, or two-dimensional detector, then the scanning mode of the X-ray measurement device is determined to be a symmetrical scanning mode. If the type of light source in the type information is a convergent beam light source and the type of detector is a two-dimensional detector, then the scanning mode of the X-ray measurement device is determined to be an asymmetric scanning mode.

4. The material measurement method according to claim 2 or 3, characterized in that, Before the step of starting the X-ray metrology equipment to scan the material to be measured according to the scanning mode and obtaining the X-ray reflectance spectrum of the material to be measured, the method further includes: Based on the current material measurement conditions, the step scanning parameters of the X-ray measurement equipment are set, wherein the step scanning parameters include the scanning step length, the scanning start angle, and the maximum scanning angle.

5. The material measurement method according to claim 1, characterized in that, Before the step of importing the X-ray reflection spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting and parsing to obtain the material information of the material to be measured, the method further includes: The X-ray reflection spectrum is preprocessed with angle scale on the horizontal axis based on the angle of the goniometer.

6. A material measuring device, characterized in that, The device includes: The acquisition module is used to acquire the X-ray reflectance spectrum of the material to be measured; The modeling module is used to construct the geometric structure of the material to be measured as a multi-layer gradient structure, determine the analytical function according to the semiconductor process type of the material to be measured, and configure the material properties corresponding to each layer of the multi-layer gradient structure according to the analytical function to obtain the gradient structure model of the material to be measured. The analytical function is any one of piecewise function, linear function, exponential function, and polynomial function. The measurement module is used to import the X-ray reflection spectrum and the gradient structure model into a preset XRR simulation calculation model for fitting, and to analyze and obtain the material information of the material to be measured.

7. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method as described in any one of claims 1-5.

8. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method as described in any one of claims 1-5.

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