Gas management assembly for substrate processing apparatus

Abstract

The present invention relates to a gas management assembly for a substrate processing apparatus, comprising: an exhaust module having a basic exhaust line for exhausting a chamber gas containing a process gas supplied to a chamber of the substrate processing apparatus to an exhaust system; a regeneration connection module having a regeneration exhaust line branching off from the basic exhaust line for discharging the chamber gas to a regeneration system; and a control module configured to automatically perform switching of an exhaust path of the chamber gas from one of the basic exhaust line and the regeneration exhaust line to the other based on at least one of an operation mode of the substrate processing apparatus, a pressure of the chamber, and a pressure of the regeneration exhaust line.

Description

TECHNICAL FIELD

[0001] The present application relates to a gas management assembly that supplies and discharges gas to and from a chamber of a substrate processing apparatus. BACKGROUND

[0002] Generally, various processes are performed on a semiconductor substrate during a manufacturing process of a semiconductor device. As examples of the processes, there are oxidation, nitridation, silicidation, ion implantation, and deposition processes. There is also a hydrogen or deuterium heat treatment process for improving interface characteristics of a semiconductor device.

[0003] A gas for the process is supplied into a chamber and acts on a semiconductor substrate. The supplied gas after the process must also be discharged from the chamber.

[0004] The gas discharged from the chamber can be discharged in a state of being filtered of process byproducts and other toxic components. The exhaust gas also contains expensive gases. If such expensive gases are used only once and then discarded as exhaust gas, a great economic waste will result.

[0005] The above background art is technical information that the inventors have grasped in order to derive embodiments of the present application, or that has been obtained in the course of deriving the present application, and does not necessarily mean publicly known technical knowledge prior to the present application. SUMMARY

[0006] Technical Problem to be Solved

[0007] An object of the present application is to provide a gas management assembly for a substrate processing apparatus that can improve the economy of substrate processing by recycling used exhaust gas.

[0008] Another object of the present application is to provide a gas management assembly for a substrate processing apparatus that can selectively operate a regeneration system in order to improve the recycling rate of exhaust gas.

[0009] Still another object of the present application is to provide a gas management assembly for a substrate processing apparatus that can easily attach a regeneration system even if the regeneration system is not reflected at the time of initial manufacturing.

[0010] Means for Solving the Problem

[0011] To solve the problem of the present application, according to a gas management assembly of a substrate processing device of the present application, comprising: an exhaust module having a basic exhaust line for discharging chamber gas containing process gas supplied to a chamber of a substrate processing device to a discharge system; a regeneration connection module having a regeneration exhaust line branched from the basic exhaust line for discharging the chamber gas to a regeneration system; and a control module configured to automatically perform switching of an exhaust path of the chamber gas from one of the basic exhaust line and the regeneration exhaust line to the other based on at least one of an operating mode of the substrate processing device, a pressure of the chamber, and a pressure of the regeneration exhaust line.

[0012] Here, the exhaust module can include a gas discharger installed in the basic exhaust line for adjusting an exhaust amount of the chamber gas, and a basic line shutter installed behind the gas discharger in the basic exhaust line and formed to control flow of the chamber gas to the discharge system, the regeneration connection module includes a regeneration line shutter installed in the regeneration exhaust line behind the gas discharger and formed to control flow of the chamber gas to the regeneration exhaust line, and the control module can control opening and closing actions of the basic line shutter and the regeneration line shutter to achieve the automatic switching.

[0013] Here, when the operating mode is one of a process start, a process end, and a process abort, the control module can switch the exhaust path to the basic exhaust line.

[0014] Here, when the operating mode is the process execution, if the pressure of the chamber is higher than or equal to a minimum switching pressure, the control module can switch the exhaust path to the regeneration exhaust line.

[0015] Here, the minimum switching pressure can be higher than atmospheric pressure.

[0016] Here, when the operating mode is the process execution, if the pressure of the chamber exceeds a maximum switching pressure, the control module switches the exhaust path to the basic exhaust line, and the maximum switching pressure can be higher than the minimum switching pressure.

[0017] Here, the control module can automatically switch to the regeneration exhaust line only when operation of the regeneration system is ready.

[0018] Here, the chamber gas can contain deuterium.

[0019] Here, when the automatic switching is performed, the control module can simultaneously open the basic exhaust line and the regeneration exhaust line during a delay time.

[0020] Here, the delay time can be within several seconds.

[0021] Here, the housing can further include an internal space for accommodating the exhaust module and the regeneration connection module, and a charging module configured to charge the internal space with a protective gas at a pressure higher than an external pressure of the housing.

[0022] Here, the housing can include a main housing for accommodating at least a portion of the exhaust module, and an auxiliary housing for accommodating the regeneration connection module.

[0023] Here, the main housing and the auxiliary housing are in communication with each other, and the charging module can be in communication with only one of the main housing and the auxiliary housing.

[0024] Here, the gas management assembly can further include a gas supply module formed to supply the process gas to the chamber at a pressure higher than an atmospheric pressure, the substrate processing apparatus processing the substrate at a pressure higher than the atmospheric pressure.

[0025] Inventive Effects

[0026] According to the gas management assembly for a substrate processing apparatus configured as described above, the control module performs automatic switching of the exhaust path based on an operation mode of a high-pressure substrate processing apparatus, a pressure of the chamber, or a pressure of the regeneration exhaust line branched from the main exhaust line to discharge the chamber gas to the regeneration system, and thus, the chamber gas can be recycled through the regeneration system. In addition, when the regeneration efficiency is high, the regeneration efficiency can be improved by the chamber gas entering the regeneration system.

[0027] When the regeneration connection module is installed on the auxiliary housing connected to the main housing, the regeneration connection module can be additionally installed later even if it is not reflected at the time of initial manufacturing. Thus, the function of recycling the exhaust gas can be easily added to the manufactured gas management assembly. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 is a conceptual diagram of a gas management assembly for a substrate processing apparatus according to an embodiment of the present invention.

[0029] Figure 2 is a block diagram for explaining a control structure of the gas management assembly for a substrate processing apparatus of Figure 1

[0030] Figure 3 is a conceptual diagram of a gas management assembly for a substrate processing apparatus according to another embodiment of the present invention.

[0031] Figure 4 ​is a flow chart illustrating a control module controlling exhaust of chamber gas.

[0032] Figure 5 It shows the Figure 4 A flowchart of a specific example of steps (S3 and S5).

[0033] Figure 6 This is a conceptual diagram used to explain the automatic switching sequence of control modules.

[0034] (Explanation of Reference Numerals)

[0035] 100, 200: Gas management components 110, 210: Housing

[0036] 120, 220: air supply module 130, 230: exhaust module

[0037] 140, 240: filling module 150, 250: discharge module

[0038] 160, 260: Regeneration connection module 170, 270: Sensing module

[0039] 180: Control module 190: Storage module DETAILED DESCRIPTION

[0040] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0041] The present invention is not limited to the embodiments disclosed below and may be modified in various ways and implemented in various different forms. These embodiments are provided solely to complete the disclosure of the present invention and to fully inform those with ordinary knowledge of the scope of the invention. Therefore, it should be understood that the present invention is not limited to the embodiments disclosed below and includes not only replacing or adding the structure of one embodiment to the structure of another embodiment, but also all modifications, equivalents, and even substitutes within the technical concept and scope of the present invention.

[0042] It should be understood that the drawings are intended only to facilitate understanding of the embodiments disclosed in this specification and are not intended to limit the technical concepts disclosed in this specification. The drawings include all variations, equivalents, and even alternatives within the concepts and technical scope of the present invention. In the drawings, the dimensions or thicknesses of components may be exaggerated or reduced for ease of understanding, but this does not limit the scope of protection of the present invention.

[0043] The terminology used in the description herein is for the purpose of describing particular implementations and embodiments only and is not intended to limit the invention. Furthermore, singular articles are intended to include the plural unless otherwise clear from the context. The terms "including," "comprising," "consisting" and "consisting essentially of," when used in the specification, specify the presence of stated features, integers, steps, actions, components, devices, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, actions, components, devices, or combinations thereof.

[0044] The terms first, second, etc. can be used to describe various components, but the components should not be limited by such terms. The terms are used only to distinguish one component from another.

[0045] When it is referred to that one component is "connected" or "coupled" to another component, it should be understood that the one component can be directly connected or coupled to the other component, or there can be another component in between. In contrast, when it is referred to that one component is "directly connected" or "directly coupled" to another component, it should be understood that there is no other component in between.

[0046] When it is referred to that one component is "on" or "under" another component, it should be understood that the one component is not only directly disposed on or under the other component, but there can be another component in between.

[0047] Unless otherwise defined, all terms used in connection with the present application, including technical or scientific terms, have the same meanings as those generally understood by a person having ordinary knowledge in the art to which the present application belongs. The terms generally used should be interpreted in conjunction with the meanings of the related art, and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0048] Figure 1 is a conceptual diagram of a gas management assembly for a substrate processing apparatus according to an embodiment of the present application.

[0049] Referring to the drawing, the gas management assembly 100 is a structure for supplying gas to chambers IC and EC of a high-pressure substrate processing apparatus HA, and discharging gas from the chambers IC and EC. The gas management assembly 100 can be understood as a part of the high-pressure substrate processing apparatus HA.

[0050] The chambers IC and EC in the high-pressure substrate processing apparatus HA are mainly described. The chambers IC and EC can have inner chambers IC and outer chambers EC.

[0051] The inner chamber IC forms a processing space that accommodates a substrate to be processed. The inner chamber IC can be made of a non-metallic material such as quartz to reduce contamination in a high-pressure or even high-temperature working environment. Although not shown, a door (not shown) for opening and closing the processing space can be provided at the lower end of the inner chamber IC. When the door is lowered, the processing space is opened, and the substrate can be put into the inner chamber IC in a state of being mounted on a holder (not shown). The inner chamber IC can be heated to several hundred to several thousand degrees Celsius by operation of a heater (not shown) disposed outside the inner chamber IC. The substrate can be, for example, a semiconductor wafer. At this time, the holder can be a wafer boat that stacks the semiconductor wafers in multiple layers.

[0052] The outer chamber EC can be formed to accommodate the inner chamber IC. Unlike the inner chamber IC, the outer chamber EC has no contamination problem, and thus the outer chamber EC can be made of a metallic material. The outer chamber EC can also have a door (not shown). The door of the outer chamber EC can be opened in conjunction with the door of the inner chamber IC. The inner chamber IC can be mounted in the outer chamber EC.

[0053] Next, the gas management assembly 100 will be described. The gas management assembly 100 can include a housing 110, a supply module 120, an exhaust module 130, a charge module 140, a discharge module 150, a regeneration connection module 160, and a sensing module 170.

[0054] The housing 110 is a structure having an internal space 111. The housing 110 can have a substantially rectangular parallelepiped-shaped main body. The supply module 120, the exhaust module 130, and the like can be disposed in the internal space 111.

[0055] The supply module 120 is a structure that supplies gas to the chambers IC and EC. The supply module 120 can be in communication with a utility line (gas supply line) of a semiconductor factory. The supply module 120 can have a first supply line 121 in communication with the inner chamber IC and a second supply line 125 in communication with the outer chamber EC.

[0056] A gas for processing a substrate, such as hydrogen (H2), deuterium (D2), fluorine (F2), ammonia (NH3), chlorine (Cl2), nitrogen (N2), or the like, can be selectively supplied to the inner chamber IC through the first supply line 121. An inert gas such as nitrogen or argon (Ar) can be supplied to the outer chamber EC through the second supply line 125. The gas put into the outer chamber EC is specifically supplied to a space between the outer chamber EC and the inner chamber IC. Hydrogen or the like put into the inner chamber IC and nitrogen or the like put into the outer chamber EC can also be collectively referred to as a process gas.

[0057] The process gas is supplied to the chambers IC and EC at a pressure higher than the atmospheric pressure, for example, at a high pressure of several to several tens of atmospheres. When the pressure in the inner chamber IC is a first pressure and the pressure in the outer chamber EC is a second pressure, the second pressure can be set relative to the first pressure. For example, the second pressure can be set to be slightly greater than the first pressure. Such a pressure difference has the advantage of preventing leakage of the gas in the inner chamber IC and preventing damage to the inner chamber IC.

[0058] To set and maintain the relationship between the first pressure and the second pressure, a regulating feeder 122 can be installed in the first supply line 121. The regulating feeder 122 is a device that measures the amount of gas to be fed to the inner chamber IC and feeds it. For example, the regulating feeder 122 can be a mass flow controller (MFC). A switching feeder 123 can be installed downstream of the regulating feeder 122 and is used to open and close the first supply line 121. A switching feeder 127 can be installed in the second supply line 125. Unlike the regulating feeder 122, the switching feeder 127 does not measure the flow rate. The opening and closing of the switching feeder 127 can be adjusted based on the pressure in the outer chamber EC.

[0059] The exhaust module 130 is a structure for exhausting the gas (chamber gas) from the chambers IC and EC. The chamber gas can be a mixture of the process gas and process by-products such as particles from the substrate. The chamber gas can be a gas having a high temperature due to a high-temperature process, for example, a temperature higher than the ignition point of the process gas. The exhaust module 130 can be connected to a utility line (gas exhaust line) of a semiconductor factory.

[0060] The exhaust module 130 can have a first exhaust line 131 for exhausting the gas from the inner chamber IC and a second exhaust line 135 for exhausting the gas from the outer chamber EC. The first exhaust line 131 is connected to the upper portion of the inner chamber IC and can extend to the outside of the outer chamber EC. A gas discharger 133 can be provided in the first exhaust line 131. The second exhaust line 135 is connected to the outer chamber EC and can have a gas discharger 137. The gas dischargers 133, 137 adjust the pressures in the chambers IC and EC by adjusting the amount of exhaust of the process gas or the chamber gas. The gas dischargers 133, 137 can be, for example, flow control valves. If the first exhaust line 131 and the second exhaust line 135 are merged, the active gas such as hydrogen / deuterium in the chamber gas is diluted by the inert gas, and thus the concentration thereof is reduced.

[0061] The filling module 140 is a structure for filling the internal space 111 with a protective gas. The protective gas can be, for example, an inert gas. The inert gas can include, for example, nitrogen or argon.

[0062] By filling the protective gas, the pressure (third pressure) of the internal space 111 has a different characteristic from the first pressure and the second pressure. The third pressure is higher than the external pressure (typically, atmospheric pressure) of the housing 110, but is lower than the first pressure and the second pressure. Specifically, the third pressure can be a value more biased toward the external pressure than the first pressure and the second pressure, and can be a level slightly higher than atmospheric pressure. For example, the third pressure can be a pressure of about several tens to several hundreds of Pa higher than atmospheric pressure. The third pressure needs to be set to be sufficient to prevent the inflow of external air (oxygen) into the internal space 111.

[0063] The exhaust module 150 is configured to exhaust the gas in the internal space 111 to the outside. The gas in the internal space 111 can be mainly the protective gas, but can also be a mixed gas mixed with the chamber gas. The mixed gas can be generated when the process gas or the chamber gas leaks in the supply module 120 or the exhaust module 130.

[0064] The exhaust module 150 has an exhaust duct 151 that communicates with the internal space 111. The exhaust duct 151 can communicate with a utility line (gas exhaust line) of a semiconductor factory. A gate valve 155 can be provided in the exhaust duct 151. When it is necessary to exhaust the gas from the internal space 111, the gate valve 155 can be opened.

[0065] The regeneration connection module 160 is a structure for guiding the chamber gas {specifically, the gas exhausted from the internal chamber IC} to a regeneration system. The regeneration connection module 160 can have a regeneration exhaust line 161 branched from the first exhaust line or the basic exhaust line 131 and connected to the regeneration system. A branch point 163 of the regeneration exhaust line 161 can be located in the internal space 111. The regeneration system is used to recover and reuse the main gas in the chamber gas, such as expensive deuterium gas. The regeneration system can have a reclaimer R. A regeneration line shutter 165 can be provided in the regeneration exhaust line 161. The regeneration line shutter 165 can be an on-off valve that controls the regeneration exhaust line 161. In an alternative embodiment, the main gas includes not only expensive gas but also hazardous gas. The hazardous gas can be recovered in the regeneration system, but can not be reused. Specifically, the hazardous gas can be treated in a dedicated scrubber independently of other gases.

[0066] Corresponding to the regeneration pipeline shutoff 165, a basic pipeline shutoff 134 can be provided in the basic exhaust pipeline 131. The basic pipeline shutoff 134 is a valve for controlling the basic exhaust pipeline 131. The basic pipeline shutoff 134 and the regeneration pipeline shutoff 165 can be installed behind the gas discharger 133 along the exhaust path of the chamber gas. When the basic pipeline shutoff 134 is opened and the regeneration pipeline shutoff 165 is closed, the chamber gas flows to the exhaust system via the basic exhaust pipeline 131. The exhaust system can filter and exhaust the process byproducts from the chamber gas. The exhaust system can have a scrubber S for capturing the process byproducts. Unlike the above, when the basic pipeline shutoff 134 is closed and the regeneration pipeline shutoff 165 is opened, the chamber gas can flow to the recycler R via the regeneration exhaust pipeline 161. When the second exhaust pipeline 135 merges with the portion of the first exhaust pipeline 131 after the branch point 163, the inert gas from the external chamber EC can only flow into the scrubber S. Since the regeneration demand of the inert gas is low, it is not necessary to be sent to the recycler R.

[0067] The sensing module 170 can have a pressure gauge 171 and a gas detector 175 to detect the environment of the internal space 111. The pressure gauge 171 is used to detect the gas pressure in the internal space 111. Although not shown, the pressure gauge 171 can also include a manometer for detecting the pressure in the chambers IC and EC and the regeneration exhaust pipeline 161. The gas detector 175 is used to detect the process gas (specifically, active gas such as hydrogen) that leaks into the internal space 111 and the gas such as oxygen that flows in from the outside.

[0068] Reference Figure 2 The control structure of the gas management assembly 100 is described. Figure 2 is a block diagram for describing Figure 1 the control structure of the gas management assembly for a substrate processing device.

[0069] Referring to this figure (and Figure 1 ), the gas management assembly 100 can include, in addition to the above-mentioned gas supply module 120, exhaust module 130, filling module 140, etc., a control module 180 and a storage module 190.

[0070] The control module 180 is a structure for controlling the gas supply module 120, the exhaust module 130, etc. The control module 180 can control the filling module 140, the exhaust module 150, etc. based on the sensing results of the sensing module 170.

[0071] The storage module 190 is a structure for storing data, programs, etc. that the control module 180 can refer to for control.

[0072] According to these configurations, the control module 180 can fill the internal space 111 with the protective gas based on the sensing result of the sensing module 170, or discharge the gas in the internal space 111 according to the leakage of the process gas. For the former, the control module 180 can control the filling module 140, and for the latter, the control module 180 can control the discharging module 150.

[0073] The control module 180 can control the filling module 140 together with the discharging module 150 so that the protective gas is injected into the internal space 111 when discharging the gas in the internal space 111. Thus, when the chamber gas leaks into the internal space 111, the concentration of the chamber gas is diluted. The injection of the protective gas also promotes the discharge of the chamber gas.

[0074] The control module 180 can not only discharge the gas in the internal space 111, but also discharge the gas in the chambers IC and EC. When a problem occurs due to the leakage of the gas management assembly 100, the processing in the chambers IC and EC cannot be continued. For the exhaust of the chambers IC and EC, the control module 180 can control the exhaust module 130.

[0075] Reference Figure 3 Another form of the gas management assembly 100 is described. Figure 3 is a conceptual view of a gas management assembly for a substrate processing apparatus according to another embodiment of the present invention.

[0076] Referring to this drawing, the gas management assembly 200 is substantially the same as the gas management assembly 100 of the foregoing embodiment, but differs in the structures of the housing 210 and the regeneration connection module 260. The structure of the high-pressure heat treatment apparatus HA (refer to Figure 1 ) is omitted in this drawing. Further, in the structure of the gas management assembly 200, the same configuration as the foregoing embodiment is not described again even if it is shown in the drawing.

[0077] The housing 210 can be divided into a main housing 211 and an auxiliary housing 215. The internal space 212 of the main housing 211 is configured with the supply module 220, the exhaust module 230, and the like. The filling module 240 and the like can communicate with the internal space 212. The auxiliary housing 215 is installed on the main housing 211 and can have an internal space 216. The volume of the internal space 216 can be smaller than that of the internal space 212.

[0078] A part of the basic exhaust line 231 and a branch point 263 at which the regeneration exhaust line 261 branches from the basic exhaust line 231 can be located in the internal space 216. The basic line shutter 234 and the regeneration line shutter 265 can also be located in the internal space 216. The second exhaust line 235 can have the same configuration as the second exhaust line 135.

[0079] The inner space 216 can be in communication with the inner space 212. In this case, the inner space 212 can also be filled with the protective gas by the filling module 240. In an alternative embodiment, the inner space 216 can be configured independently from the inner space 212, and an additional protective gas filling line can be connected to the inner space 216. In contrast, in the case where the inner space 216 is in communication with the inner space 212, the filling module 240 can fill the inner space 216 with the protective gas.

[0080] According to the above-described structure, since the regeneration connection module 260 is installed on the main housing 211 by the installation of the generation connection module 260, the regeneration connection module 260 can also be easily installed additionally. In other words, since the auxiliary housing 215 and the regeneration connection module 260 are additionally provided outside the main housing 211, the structure of the main housing 211 (as well as the structure configured inside the main housing 211) does not need to be changed.

[0081] By communicating the inner space 216 with the inner space 212, the regeneration connection module 260 can also be protected by the protective gas. Even if gas leakage occurs at the branch point 263, the basic line shutoff valve 234, the regeneration line shutoff valve 265, etc., since the protective gas is present, the leaked gas will not come into contact with the outside air.

[0082] During the process of discharging the chamber gas, the control module 180 of the gas management assembly 100 can control the exhaust module 130 and the regeneration connection module 160 as a whole. The details of this are described with reference to Figures 4 to 6 The control-related content of the gas management assembly 100 can also be applied to the gas management assembly 200.

[0083] Figure 4 is a flowchart of the way in which the control module controls the discharge of the chamber gas.

[0084] Further referring to this figure, the control module 180 determines whether the chamber gas needs to be discharged (S1). It can be necessary to discharge the chamber gas in at least one of various operating modes of the chamber IC and EC, such as an Idle mode, a Standby mode, and a Process mode.

[0085] If the chamber gas needs to be discharged, the control module 180 grasps the operating mode of the chamber IC and EC and the relevant pressure (S3). The relevant pressure can include the pressure of the inner chamber IC and the pressure of the regeneration exhaust line 161. The pressure of the regeneration exhaust line 161 can be the pressure of the gas measured by the recuperator R (refer to Figure 1 ).

[0086] The control module 180 automatically switches the exhaust path of the chamber gas based on information of the operation mode or the like (S5). Specifically, the control module 180 can switch the exhaust path from one of the basic exhaust line 131 of the exhaust module 130 and the regeneration exhaust line 161 of the regeneration connection module 160 to the other. The control module 180 can switch the exhaust path to the regeneration exhaust line 161 only when the operation of the regeneration system is ready. To switch the exhaust path, the control module 180 can control the opening and closing operations of the basic line shutter 134 and the regeneration line shutter 165.

[0087] Figure 5 is a flowchart showing a specific example of the steps (S3 and S5) of Figure 4

[0088] With further reference to the figure, the control module 180 grasps the operation mode (S11). The operation mode can include a process start, a processing, a process end, and a process abort.

[0089] When the operation mode is the process start (S13), the process end (S23), or the process abort (S25), the control module 180 switches the exhaust path to the basic exhaust line 131. To this end, the control module 180 opens the basic line shutter 134 and closes the regeneration line shutter 165. The chamber gas flows into the scrubber S.

[0090] When the operation mode is the processing (S15), the control module 180 determines whether the pressure of the internal chamber IC is higher than or equal to a minimum switching pressure (S17). When the pressure of the internal chamber IC is higher than or equal to the minimum switching pressure, the control module 180 switches the exhaust path to the regeneration exhaust line 161 (S19). The control module 180 closes the basic line shutter 134 and opens the regeneration line shutter 165. Thus, the chamber gas flows to the recycler R. The minimum switching pressure can be a pressure higher than the atmospheric pressure, but can also be a level not reaching, for example, several atmospheres.

[0091] ​When the pressure of the internal chamber IC is less than the minimum switching pressure (S17), the control module 180 switches the exhaust path to the basic exhaust line 131 (S27). When the pressure of the internal chamber IC is less than the minimum switching pressure, the chamber gas is difficult to flow into the regeneration system naturally. In addition, since the natural exhaust of the chamber gas is not smooth, the chamber gas in the internal chamber IC can be purged using a purge gas such as nitrogen. Even if the chamber gas is purged and then sent to the recycler R, since the chamber gas is diluted by the purge gas, the regeneration efficiency of the chamber gas is low. In this case, it is preferable to flow the chamber gas to the exhaust system rather than the regeneration system.

[0092] The control module 180 can also determine whether the pressure of the regeneration exhaust line 161 exceeds a maximum switching pressure (S21). When the pressure of the regeneration exhaust line 161 is less than or equal to the maximum switching pressure, the control module 180 maintains the exhaust path in the regeneration exhaust line 161. When the pressure of the regeneration exhaust line 161 exceeds the maximum switching pressure, the control module 180 can switch the exhaust path to the basic exhaust line 131 (S27). The maximum switching pressure can be at a level of several to several tens of torr, which can be a pressure level that ensures safe operation of the recycler R. The maximum switching pressure can have a value that is several or tens of times the minimum switching pressure.

[0093] In addition to the operation modes described above, the control module 180 can also perform switching or maintain the switchable state of the exhaust path in operation modes other than the above-described operation modes. For example, in the standby mode, the control module 180 can switch the exhaust path to the basic exhaust line 131. In the hibernation mode, when the pressure in the internal chamber IC is less than the minimum switching pressure or the pressure of the regeneration exhaust line 161 is greater than or equal to the maximum switching pressure, the control module 180 can switch the exhaust path to the regeneration exhaust line 161 by manual operation of the operator.

[0094] Figure 6 is a conceptual diagram for explaining the timing of automatic switching of the control module.

[0095] With further reference to the figure, in the process in which the control module 180 opens one of the basic exhaust line 131 and the regeneration exhaust line 161 and closes the other, both the basic exhaust line 131 and the regeneration exhaust line 161 are also opened for a period of time. This period of time can be referred to as a delay time (Td). The delay time can be in the order of several seconds.

[0096] In particular, with reference to Figure 6(a) of FIG. 10, when the basic line shutter 134 is opened and the regeneration line shutter 165 is closed, can be switched to the opposite state. The control module 180 must close the basic line shutter 134 and open the regeneration line shutter 165. The closing of the basic line shutter 134 and the opening of the regeneration line shutter 165 can not be performed at the same time, but can be performed with a delay time Td. Thus, the basic line shutter 134 can be closed after the regeneration line shutter 165 is opened and the delay time Td elapses. The delay time Td can alleviate a pressure shock that can be applied to the internal chamber IC due to the switching of the exhaust path.

[0097] With reference to Figure 6 (b) of FIG. 10, even in the opposite case, the delay time Td is ensured. Specifically, the regeneration line shutter 165 can be closed after the basic line shutter 134 is opened and the delay time Td elapses.

[0098] Although the gas management assembly 100, 200 is exemplified in the present specification as being used in the high-pressure substrate processing apparatus HA, the present application is not limited thereto. The gas management assembly 100, 200 can also be applied in a substrate processing apparatus that processes a substrate at a pressure below atmospheric pressure, not at a high pressure. Furthermore, the present application can also be applied in a substrate processing apparatus that has a single chamber, not the double chambers IC and EC. The present application can be applied not only in a batch type substrate processing apparatus, but also in a single wafer type processing apparatus.

Claims

1. A gas management assembly for a substrate processing apparatus, wherein: include: an exhaust module having a basic exhaust line for exhausting chamber gas including a process gas supplied to a chamber of the substrate processing apparatus to an exhaust system; a regeneration connection module having a regeneration exhaust line branched from the basic exhaust line for exhausting the chamber gas to a regeneration system; as well as The control module is configured to automatically switch the exhaust path of the chamber gas from one of the basic exhaust line and the regeneration exhaust line to the other based on the operation mode of the substrate processing apparatus, at least one of the pressure of the chamber and the pressure of the regeneration exhaust line.

2. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: The exhaust module comprises: a gas exhauster installed in the basic exhaust line for adjusting the exhaust volume of the chamber gas; and a basic line shutter installed in the basic exhaust line behind the gas exhauster and formed to control the flow of the chamber gas to the exhaust system, The regeneration connection module includes a regeneration line shutter installed on the regeneration exhaust line in a manner of being located behind the gas discharger and configured to control the flow of the chamber gas to the regeneration exhaust line. The control module controls the opening and closing actions of the basic pipeline switch and the regeneration pipeline switch to achieve the automatic switching.

3. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: When the operation mode is one of process start, process end, and process suspension, the control module switches the exhaust path to the basic exhaust line.

4. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: When the operation mode is during the process execution, if the pressure of the chamber is higher than or equal to the minimum switching pressure, the control module switches the exhaust path to the regeneration exhaust line.

5. The gas management assembly for a substrate processing apparatus according to claim 4, wherein: This minimum switching pressure is above atmospheric pressure.

6. The gas management assembly for a substrate processing apparatus according to claim 4, wherein: When the operation mode is in process execution, if the pressure of the chamber exceeds the maximum switching pressure, the control module switches the exhaust path to the basic exhaust line. The maximum switching pressure is higher than the minimum switching pressure.

7. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: The control module will automatically switch to the regeneration exhaust line only when the regeneration system is ready for operation.

8. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: The chamber gas contains deuterium.

9. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: The control module opens the basic exhaust line and the regeneration exhaust line simultaneously during a delay time when performing the automatic switching.

10. The gas management assembly for a substrate processing apparatus according to claim 9, wherein: The delay time is within a few seconds.

11. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: Also includes: a housing having an inner space for accommodating the exhaust module and the regeneration connection module; as well as The filling module is configured to fill the inner space with a protective gas at a pressure higher than an external pressure of the housing.

12. The gas management assembly for a substrate processing apparatus according to claim 11, wherein: The housing comprises: a main housing for housing at least a portion of the exhaust module; and The auxiliary housing is used to accommodate the regeneration connection module.

13. The gas management assembly for a substrate processing apparatus according to claim 12, wherein: The main housing and the auxiliary housing are communicated with each other, The filling module is in communication with only one of the main housing and the auxiliary housing.

14. The gas management assembly for a substrate processing apparatus according to claim 1, wherein: Also included is a gas supply module configured to supply the process gas to the chamber at a pressure higher than atmospheric pressure. The substrate processing apparatus processes the substrate at a pressure higher than the atmospheric pressure.

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