Electrostatic chuck

Abstract

The invention relates to the technical field of semiconductor detection, in particular to an electrostatic chuck which comprises a substrate and a plurality of mounting parts arranged on the side face of the substrate at intervals, and the mounting parts have flexibility. The electrode layer is located on the top surface of the substrate, and the electrode layer comprises a positive electrode layer and a negative electrode layer which are insulated from each other; and the insulating layer is positioned on the surface, far away from the top surface of the substrate, of the electrode layer. According to the invention, it is ensured that the electrostatic chuck has excellent flatness, and then it is ensured that the wafer carried by the electrostatic chuck has high flatness.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor detection, and particularly relates to an electrostatic chuck. BACKGROUND

[0002] In a overlay measurement process, since the measurement speed needs to be matched with the process speed of a lithography machine, and the measurement precision is sub-nanometer level to correct the lithography machine process, in the measurement process, the wafer needs to be placed below an optical detection system, and the wafer is driven by a chuck to move at a high acceleration or deceleration, and after the wafer is moved to a position, the wafer needs to quickly reach a nanometer level position stability. It is found through analysis that for a process below 28nm node, higher measurement speed and measurement precision are needed, therefore, the platform driving the wafer movement needs higher acceleration and higher position stability, and currently, the acceleration of the platform driving the wafer movement is required to be at least 2g (g is the gravity acceleration), and the in-position stability of the wafer in a static state is less than 1nm.

[0003] For the electrostatic adsorption type chuck, not only the relative movement between the wafer and the electrostatic chuck cannot occur in the measurement process, but also the electrostatic chuck needs to have higher flatness and nanometer level positioning precision, so as to ensure the accuracy of the overlay measurement, however, the manufacturing process of the electrostatic chuck is complex, and the electrostatic chuck is usually formed by multi-layer stacking, which is easy to cause the adsorption surface of the electrostatic chuck bearing the wafer to be non-parallel to the bottom surface of the electrostatic chuck for installation, and usually, the bottom surface of the electrostatic chuck is installed on the installation platform in a horizontal state, which will cause the adsorption surface of the electrostatic chuck to be in a non-horizontal state, and affect the measurement. SUMMARY

[0004] Therefore, the application aims to provide an electrostatic chuck, which is beneficial to ensure that the adsorption surface of the electrostatic chuck has better flatness, and further ensure that the wafer carried by the electrostatic chuck has higher flatness.

[0005] To achieve the above-mentioned purpose, the technical scheme of the application is as follows: The application provides an electrostatic chuck, which comprises a base, a plurality of mounting parts arranged at intervals on the side surface of the base, and the mounting parts are flexible; an electrode layer, the electrode layer is located on the top surface of the base, and the electrode layer comprises a positive electrode layer and a negative electrode layer which are insulated from each other; and an insulating layer, the insulating layer is located on the surface of the electrode layer away from the top surface of the base.

[0006] Further, the mounting parts are integrally formed with the base.

[0007] Further, the material of the base and the material of the mounting parts are both silicon nitride.

[0008] Further, the side of the mounting portion is divided into a first side, a second side, a third side and a fourth side, the first side is connected with the substrate, the second side is opposite to the first side, the third side is opposite to the fourth side, the third side and / or the fourth side has a flexible opening, the flexible opening penetrates the mounting portion along the thickness direction of the mounting portion.

[0009] Further, the third side and the fourth side both have flexible openings, and the flexible openings of the third side and the fourth side are staggered in the direction from the third side to the fourth side.

[0010] Further, the third side and the fourth side both have a corresponding flexible opening, and the ratio of the size of each flexible opening to the width of the mounting portion is within the range of 1 / 2 to 3 / 5 in the direction from the third side to the fourth side.

[0011] Further, the third side has one flexible opening, and the fourth side has a plurality of flexible openings, and the ratio of the size of the flexible opening of the third side to the width of the mounting portion is within the range of 1 / 2 to 3 / 5 in the direction from the third side to the fourth side, and the ratio of the sum of the sizes of the flexible openings of the fourth side to the width of the mounting portion is within the range of 1 / 2 to 3 / 5.

[0012] Further, the electrostatic chuck further comprises a mounting bracket corresponding to the mounting portion and a fastener, the first end of the mounting bracket has a through hole, the second side of the mounting portion has a fastening hole, and the fastener penetrates the through hole and is fastened to the fastening hole to realize the connection between the mounting portion and the mounting bracket; wherein the outer diameter of the fastener matches the inner diameter of the fastening hole, and the inner diameter of the through hole is greater than the outer diameter of the fastener, and the position of the mounting portion relative to the mounting bracket in the thickness direction of the substrate is adjustable.

[0013] Further, the side of the substrate has a needle opening penetrating the substrate, and a plurality of needle openings are arranged at intervals on the side of the substrate; the electrostatic chuck further comprises a needle liftable in the needle opening.

[0014] Further, the needle comprises a bearing portion, a supporting portion and a protruding portion, the protruding portion is arranged on the bearing portion, the bearing portion is arranged on the supporting portion, the bearing portion extends in the direction parallel to the top surface of the substrate, and the supporting portion extends in the thickness direction of the substrate.

[0015] Compared with the prior art, the application can achieve the following beneficial effects: The mounting part for realizing the installation of the electrostatic chuck is arranged at the edge of the base, and the mounting part is designed to have a flexible structure, so that after the electrostatic chuck is installed in place by the mounting part, even if the parallelism between the upper and lower surfaces of the electrostatic chuck is poor, the adjustment of the flatness of the upper surface of the electrostatic chuck is not limited, and the corresponding mounting part is fine-tuned relative to the mounting position, so that the parallelism adjustment of the upper surface of the electrostatic chuck can be realized, and during the fine-tuning of the mounting part, since the mounting part has flexibility, the mounting part can absorb the stress generated by the fine-tuning on the electrostatic chuck, thereby ensuring that the upper surface of the electrostatic chuck for carrying the wafer always has high flatness, thereby facilitating the improvement of the precision of the overlay measurement on the wafer; In addition, the mounting part is integrally formed with the base, so that the mounting part and the base have good stress transmission, thereby facilitating the effective absorption of the stress of the base by the mounting part; silicon nitride is used as the material of the base and the mounting part, on the one hand, which is conducive to reducing the weight of the electrostatic chuck, improving the rigidity of the electrostatic chuck, and facilitating the processing of the electrostatic chuck, on the other hand, the silicon nitride material has better flexibility than other types of ceramic materials, which is conducive to ensuring that the mounting part has better flexibility; in addition, the mounting part is designed at the edge of the base, avoiding the opening of the base and the setting of the metal mounting part in the opening to install the electrostatic chuck, thereby reducing the magnetic interference caused by the mounting structure, avoiding the change of the magnetic field strength in the measurement area of the wafer, and more conducive to meeting the requirement of electron beam measurement on the magnetic field, thereby providing an electrostatic chuck with light weight, high rigidity, high flatness, high position stability of the wafer under high-speed motion, fine adjustment of the flatness, and less magnetic field interference. BRIEF DESCRIPTION OF DRAWINGS

[0016] The accompanying drawings, which form a part of this application, are included to provide a further understanding of the application and are incorporated in and constitute a part of this application. The embodiments of this application, and their Figure 1 A structural schematic diagram of the electrostatic chuck according to the embodiments of the present application; Figure 2 A structural schematic diagram of the mounting part according to the embodiments of the present application; Figure 3 An installation schematic diagram of the electrostatic chuck according to the embodiments of the present application; Figure 4 An installation schematic diagram of the electrostatic chuck in the prior art; Figure 5 A top view of two mounting parts with different flexible notches according to the embodiments of the present application.

[0017] Explanation of the accompanying symbols: 1. electrostatic chuck; 2. mounting platform; A. mounting plane; 100. substrate; 101. mounting portion; 110. positive electrode layer; 120. negative electrode layer; 160. reverse electrode reserved hole; 151. first side; 152. second side; 153. third side; 154. fourth side; 150. flexible notch; 102. mounting bracket; 170. fastener; 140. through hole; 141. fastening hole; 1021. first supporting portion; 1022. second supporting portion; 103. ejector pin; 104. bearing portion; 105. supporting portion; 106. protrusion; 130. isolation structure; 132. first isolation portion; 131. second isolation portion; 112. first positive electrode portion; 111. second positive electrode portion; 122. first negative electrode portion; 121. second negative electrode portion. DETAILED DESCRIPTION

[0018] After analysis, it was found that in the related technology, reference Figure 4 The electrostatic chuck 1 is usually installed from the front. The front installation means that the electrostatic chuck 1 has a corresponding mounting hole. A mounting piece is set in the mounting hole to mount the lower surface of the electrostatic chuck 1 to the mounting platform 2. The front installation has the following problems: the electrostatic chuck 1 is relatively thin, and the mounting torque will cause the surface deformation of the electrostatic chuck 1, affecting the measurement requirements for high flatness; the mounting hole installed from the front will destroy the consistency of electrostatic adsorption, resulting in uneven adsorption force applied by the electrostatic chuck 1 to the wafer; the mounting piece installed from the front is usually a metal screw, which is easy to cause electrode effect under normal circumstances, which is not conducive to electron beam measurement; the mounting piece made of metal material will also cause magnetization and local magnetic field fluctuations, affecting electron beam measurement.

[0019] In addition, the electrostatic chuck 1 is usually a multi-layer superimposed structure. The accumulated parallelism error of each layer can easily cause the top and bottom surfaces of the electrostatic chuck 1 to be non-parallel. Therefore, after the bottom surface of the electrostatic chuck 1 is positioned on the mounting plane A, even if the mounting plane A is horizontal, the adsorption surface of the electrostatic chuck 1 used to support the wafer and the mounting plane A will have a parallelism error of 2um~5um, which will directly lead to a decrease in the flatness of the system. Sub-nanometer overlay measurement requires high flatness requirements, but since the up and down adjustment of the electrostatic chuck 1 is constrained by the mounting plane A, it is difficult for the electrostatic chuck 1 to be adjusted up and down. If a gasket is added between the electrostatic chuck 1 and the mounting plane A, some areas of the lower surface of the electrostatic chuck 1 will be supported, and some areas will be unsupported and suspended, resulting in uneven force on the installation position of the electrostatic chuck 1, which can easily cause local deformation of the electrostatic chuck 1, thereby affecting the flatness of the adsorption surface and the installation stability of the electrostatic chuck.

[0020] In order to solve the above problems, the electrostatic chuck is provided, and the mounting structure of the electrostatic chuck is realized by the flexible mounting part on the side of the base. Even if the parallelism between the upper and lower surfaces of the electrostatic chuck is poor, the flatness of the upper surface of the electrostatic chuck is not affected. By fine-tuning the corresponding mounting part relative to the mounting position, the parallelism of the upper surface of the electrostatic chuck can be adjusted. During the fine-tuning of the mounting part, the mounting part is flexible, so the stress caused by the fine-tuning of the electrostatic chuck is absorbed by the mounting part, thereby ensuring that the upper surface of the electrostatic chuck for carrying the wafer always has high flatness.

[0021] In order to make the purpose, technical scheme and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and do not constitute a limitation on the present application.

[0022] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0023] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate the orientation or positional relationship shown in the drawings, and are only used for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" and the like are only used for description purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features limited by "first", "second" and the like can explicitly or implicitly include one or more features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0024] In the description of the present application, it should be noted that unless otherwise specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0025] The present application will be described in detail below with reference to the accompanying drawings and in conjunction with embodiments.

[0026] With reference to Figures 1 to 3 The present application provides an electrostatic chuck, comprising: a substrate 100, and a plurality of mounting portions 101 arranged at intervals on the side surface of the substrate 100, and the mounting portion 101 is flexible; an electrode layer, the electrode layer is located on the top surface of the substrate 100, and the electrode layer comprises a positive electrode layer 110 and a negative electrode layer 120 which are insulated from each other; and an insulating layer, the insulating layer is located on the surface of the electrode layer away from the top surface of the substrate 100. Wherein, the surface of the insulating layer away from the electrode layer is used to carry a wafer. It should be noted that, in order to facilitate understanding, Figure 1 The insulating layer is illustrated in a transparent state, and the actual insulating layer can be in a non-transparent state.

[0027] The mounting portion 101 is designed on the side surface of the substrate 100, which not only avoids the limitation of the mounting platform on the parallelism adjustment of the electrostatic chuck, solves the problem of poor flatness of the adsorption surface caused by the low parallelism of the front and back surfaces of the electrostatic chuck, and the flexible mounting portion 101 is also used to absorb the structural deformation caused by machining and assembly adjustment, thereby relieving the stress deformation of the electrostatic chuck, and further ensuring that the electrostatic chuck has high flatness.

[0028] In some embodiments, the mounting portion 101 is integrally formed with the substrate 100, which is conducive to ensuring good stress transmission between the mounting portion and the substrate, and further conducive to effectively absorbing the stress of the substrate by the mounting portion.

[0029] In some embodiments, the side surface of the substrate 100 has three mounting portions 101, and the three mounting portions 101 are distributed at equal intervals on the side surface of the substrate 100, which is conducive to ensuring that the substrate 100 is stressed evenly, and further ensuring that the electrostatic chuck has high flatness.

[0030] In some embodiments, the material of the substrate 100 and the material of the mounting portion 101 are both silicon nitride. Using silicon nitride as the material of the substrate and the mounting portion, on the one hand, it is conducive to reducing the weight of the electrostatic chuck, improving the rigidity of the electrostatic chuck, and facilitating the processing of the electrostatic chuck, on the other hand, the silicon nitride material has better flexibility compared to other types of ceramic materials, which is conducive to ensuring that the mounting portion has better flexibility.

[0031] In some embodiments, the electrostatic chuck also has a reverse electrode reserved hole 160, the reverse electrode reserved hole 160 penetrates the electrostatic chuck along the thickness direction of the electrostatic chuck, and the reverse electrode reserved hole 160 is used to accommodate a measurement electrode, and the measurement electrode is used to apply voltage to the wafer during measurement.

[0032] In some examples, the top surface and the bottom surface of the substrate 100 are both circular.

[0033] In some embodiments, the side of the mounting portion 101 is divided into a first side 151, a second side 152, a third side 153 and a fourth side 154, the first side 151 is connected with the base 100, the second side 152 is opposite to the first side 151, the third side 153 is opposite to the fourth side 154, the third side 153 and / or the fourth side 154 has a flexible opening 150, the flexible opening 150 penetrates the mounting portion 101 along the thickness direction of the mounting portion 101.

[0034] In some embodiments, the third side 153 and the fourth side 154 both have the flexible opening 150, and the flexible opening 150 of the third side 153 and the flexible opening 150 of the fourth side 154 are staggered in the direction of the third side 153 pointing to the fourth side 154.

[0035] In some embodiments, the size of each flexible opening 150 is the same in the direction of the first side 151 pointing to the second side 152.

[0036] In some embodiments, referring to (a) in Figure 5 In some embodiments, referring to (a) in In some embodiments, referring to (a) in

[0037] In some embodiments, referring to (a) in Figure 5In the (b) of the first aspect, the third side 153 has one flexible opening 150, and the fourth side 154 has a plurality of flexible openings 150, for example, the fourth side 154 has 2 flexible openings 150, in the direction along the third side 153 pointing to the fourth side 154, the ratio of the size of the flexible opening 150 of the third side 153 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5, and the sum of the sizes of the flexible openings 150 of the fourth side 154 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5; or, the fourth side 154 has one flexible opening 150, and the third side 153 has a plurality of flexible openings 150, for example, the third side 153 has 2 flexible openings 150, in the direction along the fourth side 154 pointing to the third side 153, the ratio of the size of the flexible opening 150 of the fourth side 154 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5, and the sum of the sizes of the flexible openings 150 of the third side 153 to the width of the mounting portion 101 is within the range of 1 / 2~3 / 5. In this way, the flexibility distribution of the mounting portion 101 can be ensured to be uniform, thereby facilitating the absorption of the corresponding stress of the mounting portion 101 to be more uniform.

[0038] It should be noted that, for the case that the fourth side 154 or the third side 153 has a plurality of flexible openings 150, in the direction along the first side 151 pointing to the second side 152, the flexible openings 150 located on the fourth side 154 and the flexible openings 150 located on the third side 153 are arranged alternately, in this way, the flexibility distribution of the mounting portion 101 can be ensured to be uniform, thereby facilitating the absorption of the corresponding stress of the mounting portion 101 to be more uniform.

[0039] In some embodiments, the electrostatic chuck further comprises a mounting bracket 102 corresponding to the mounting portion 101, the first end of the mounting bracket 102 having a through hole 140, the second side 152 of the mounting portion 101 having a fastening hole 141, and a fastener 170 penetrating the through hole 140 and fastened to the fastening hole 141 to realize the connection of the mounting portion 101 and the mounting bracket 102; wherein the outer diameter of the fastener 170 matches the inner diameter of the fastener 170, and the inner diameter of the through hole 140 is greater than the outer diameter of the fastener 170, and the position of the mounting portion 101 relative to the mounting bracket 102 in the thickness direction of the substrate 100 is adjustable. In this way, the mounting bracket 102 cooperates with the mounting portion 101 to support the electrostatic chuck, so that the up-down adjustment of the electrostatic chuck is not restricted by the mounting platform. Since the up-down adjustment amount of the electrostatic chuck is usually in microns, the adjustment range requirement can be met by reserving a gap for the through hole 140, that is, the inner diameter of the through hole 140 is greater than the outer diameter of the fastener 170, so that the fastener 170 is adjustable in the through hole 140 in the thickness direction of the substrate 100. By adjusting the relative position of the mounting bracket 102 and the mounting portion 101 in the vertical direction of each mounting fixed point, the planarity of the upper surface of the electrostatic chuck is fine-tuned to achieve high planarity of the wafer.

[0040] In some examples, the fastening hole 141 can be a threaded hole, and the fastener 170 can be a nut.

[0041] In some embodiments, the difference between the inner diameter of the through hole 140 and the outer diameter of the fastener 170 is in the range of 0.08mm-0.12mm.

[0042] In some embodiments, the mounting bracket 102 comprises a first support portion 1021 and a second support portion 1022 connected thereto, the first support portion 1021 extends in the thickness direction of the substrate 100, the second support portion 1022 extends in the horizontal direction, the through hole 140 is located at the first end of the first support portion 1021, and the second end of the first support portion 1021 is connected to the second support portion 1022.

[0043] In some embodiments, the side surface of the substrate 100 has a thimble aperture penetrating the substrate 100, and a plurality of thimble apertures are arranged at intervals on the side surface of the substrate 100; the electrostatic chuck further comprises a thimble 103 that can be lifted in the thimble aperture. By providing the thimble aperture on the edge of the substrate 100, the center of the electrostatic chuck is avoided to be perforated to set the thimble 103, thereby relieving the influence of the center perforation on the adsorption uniformity.

[0044] In some embodiments, the thimble aperture is U-shaped.

[0045] In some examples, the side surface of the substrate 100 has three thimble apertures penetrating the substrate 100, and the three thimble apertures are uniformly arranged on the side surface of the substrate 100.

[0046] In some embodiments, the top pin 103 comprises a bearing part 104, a supporting part 105, and a protruding part 106, the protruding part 106 is arranged on the bearing part 104, the bearing part 104 is arranged on the supporting part 105, the bearing part 104 extends along a direction parallel to the top surface of the substrate 100, and the supporting part 105 extends along a thickness direction of the substrate 100.

[0047] In some embodiments, the edge of the top pin 103 away from the center of the substrate 100 is aligned with the edge of the substrate 100, and the protruding part 106 is higher than the bearing part 104 along the thickness direction of the substrate 100.

[0048] It can be understood that for the way of using an electrostatic chuck to carry a wafer for measurement, a non-vacuum adsorbed mechanical hand with a large size is usually used to pick and place the wafer, and the mechanical hand with a large size is used to avoid the wafer from falling in the case of no vacuum adsorption. Therefore, if only the top pin extending along the vertical direction is used, the multiple top pins will affect the large-size mechanical hand to pick and place the wafer. However, the top pin 103 in the present application is used, the supporting part 105 not only sets the protruding part 106 below the wafer through the bearing part 104, but also leaves a moving space for the large-size mechanical hand by the L-shaped structure formed by the supporting part 105 and the bearing part 104, thereby avoiding the interference to the mechanical hand to pick and place the wafer. In addition, the protruding part 106 with a smaller size than the bearing part 104 is used to support the wafer, thereby avoiding the large-area bearing part 104 from directly contacting the wafer, ensuring that the top pin 103 provided by the present application still has a small contact area with the wafer, and further avoiding the increase of the pollution to the wafer.

[0049] In some embodiments, the electrode layer further comprises an isolation structure 130, the positive electrode layer 110, the negative electrode layer 120, and the isolation structure 130 are arranged on the top surface of the substrate 100; the isolation structure 130 comprises a first isolation part 132 and a second isolation part 131, the first isolation part 132 encloses a sealed area on the top surface of the substrate 100, the positive electrode layer 110, the negative electrode layer 120, and the second isolation part 131 are located in the sealed area, and the second isolation part 131 is located between the positive electrode layer 110 and the negative electrode layer 120. It can be understood that the isolation structure 130 and the insulating layer on the top surface of the substrate 100 are both insulating materials, and the positive electrode layer 110 and the negative electrode layer 120 are both conductive materials. Different voltages are applied to the positive electrode layer 110 and the negative electrode layer 120 respectively to form electrostatic adsorption to the wafer.

[0050] In some embodiments, the positive electrode layer 110 includes a first positive electrode part 112 located at a central region of the top surface of the substrate 100 and a plurality of second positive electrode parts 111 in the form of sectors arranged at intervals around the outer periphery of the first positive electrode part 112, each second positive electrode part 111 being connected to the first positive electrode part 112 at one end thereof facing the first positive electrode part 112; and the negative electrode layer 120 includes a plurality of first negative electrode parts 122 and a plurality of second negative electrode parts 121, the number of the first negative electrode parts 122, the number of the second negative electrode parts 121 and the number of the second positive electrode parts 111 being the same, each second negative electrode part 121 being in the form of a sector and located between two adjacent second positive electrode parts 111, each first negative electrode part 122 being located on a side of a second positive electrode part 111 away from the first positive electrode part 112, and two adjacent second negative electrode parts 121 being connected by a corresponding first negative electrode part 122. The second positive electrode parts 111 in the form of sectors and the second negative electrode parts 121 in the form of sectors are arranged alternately, which is conducive to improving the electrostatic adsorption capacity, ensuring that the wafers after adsorption are subjected to uniform stress, and ensuring that the wafers after adsorption have a relatively optimal flatness.

[0051] In some examples, the positive electrode layer 110 includes the first positive electrode part 112 and six second positive electrode parts 111, and the negative electrode layer 120 includes six first negative electrode parts 122 and six second negative electrode parts 121.

[0052] It should be understood that the various forms of flow shown above can be used to reorder, add or delete steps. For example, the steps described in the present disclosure can be executed in parallel, in sequence, or in a different order, as long as the desired results of the technical solutions of the present disclosure can be achieved, and the present disclosure is not limited herein.

[0053] The above detailed description does not constitute a limitation on the scope of protection of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. An electrostatic chuck, characterized in that: include: A base (100), and a plurality of mounting portions (101) arranged at intervals on the side of the base (100), wherein the mounting portions (101) are flexible; An electrode layer, the electrode layer being located on the top surface of the substrate (100), the electrode layer comprising a positive electrode layer (110) and a negative electrode layer (120) that are insulated from each other; An insulating layer is located on a surface of the electrode layer away from the top surface of the substrate (100).

2. The electrostatic chuck according to claim 1, wherein: The mounting portion (101) and the base (100) are integrally formed.

3. The electrostatic chuck according to claim 1 or 2, characterized in that: The material of the substrate (100) and the material of the mounting portion (101) are both silicon nitride.

4. The electrostatic chuck according to claim 1, wherein: The side surfaces of the mounting portion (101) are divided into a first side (151), a second side (152), a third side (153) and a fourth side (154), wherein the first side (151) is connected to the base (100), the second side (152) is opposite to the first side (151), and the third side (153) is opposite to the fourth side (154), and the third side (153) and / or the fourth side (154) have a flexible notch (150), and the flexible notch (150) passes through the mounting portion (101) along the thickness direction of the mounting portion (101).

5. The electrostatic chuck according to claim 4, wherein: The third side (153) and the fourth side (154) both have flexible notches (150), and the flexible notches (150) of the third side (153) and the flexible notches (150) of the fourth side (154) are staggered in a direction from the third side (153) to the fourth side (154).

6. The electrostatic chuck according to claim 5, wherein: The third side (153) and the fourth side (154) each have a corresponding flexible notch (150), and in a direction from the third side (153) to the fourth side (154), a ratio of a size of each flexible notch (150) to a width of the mounting portion (101) is in a range of 1 / 2 to 3 / 5.

7. The electrostatic chuck according to claim 5, wherein: The third side (153) has a flexible notch (150), and the fourth side (154) has a plurality of flexible notches (150). In a direction from the third side (153) to the fourth side (154), a ratio of a size of the flexible notch (150) on the third side (153) to a width of the mounting portion (101) is in a range of 1 / 2 to 3 / 5, and a ratio of a sum of sizes of the flexible notches (150) on the fourth side (154) to a width of the mounting portion (101) is in a range of 1 / 2 to 3 / 5.

8. The electrostatic chuck according to claim 4, wherein: The electrostatic chuck further comprises a mounting bracket (102) and a fastener (170) corresponding one-to-one to the mounting portion (101), wherein a first end of the mounting bracket (102) has a through hole (140), a second side (152) of the mounting portion (101) has a fastening hole (141), and the fastener (170) passes through the through hole (140) and is fastened to the fastening hole (141) to achieve connection between the mounting portion (101) and the mounting bracket (102); The outer diameter of the fastener (170) matches the inner diameter of the fastening hole (141), and the inner diameter of the through hole (140) is larger than the outer diameter of the fastener (170). The position of the mounting portion (101) relative to the mounting bracket (102) in the thickness direction of the base (100) is adjustable.

9. The electrostatic chuck according to claim 1, wherein: The side surface of the base (100) has an ejector notch penetrating the base (100), and a plurality of the ejector notches are arranged at intervals on the side surface of the base (100); The electrostatic chuck also includes a pin (103) that can be raised and lowered in the pin notch.

10. The electrostatic chuck according to claim 9, wherein: The ejector pin (103) comprises a bearing portion (104), a supporting portion (105) and a protruding portion (106), wherein the protruding portion (106) is arranged on the bearing portion (104), the bearing portion (104) is arranged on the supporting portion (105), the bearing portion (104) extends in a direction parallel to the top surface of the substrate (100), and the supporting portion (105) extends in a thickness direction of the substrate (100).

Images