Circuit structure capable of reducing capacitance effect and preventing circuit collapse

Abstract

The invention provides a circuit structure capable of reducing a capacitance effect and preventing a circuit from collapsing. The circuit structure comprises a wiring layer which is arranged between an element connecting layer and a bottom circuit layer in an overlapping manner; an upper gap is formed between an electrode pad and an upper conductive circuit of the element connecting layer, and the electrode pad and the upper conductive circuit are insulated from each other; the bottom circuit layer is provided with a bottom conducting circuit and an electrode pad supporting structure located under the electrode pad, and a bottom interval is formed between the electrode pad supporting structure and the bottom conducting circuit and is insulated from the bottom conducting circuit; the wiring layer is provided with a wiring dielectric material arranged between the electrode pad and the electrode pad supporting structure; the arrangement of the upper space and the bottom space can reduce the capacitance effect strength between the element connection layer and the bottom circuit layer, and the electrode pad support structure can ensure that the electrode pad is free from collapse.

Description

TECHNICAL FIELD

[0001] The present invention relates to a circuit structure, and more particularly to a circuit structure capable of reducing the capacitance effect and preventing the circuit from collapsing. BACKGROUND

[0002] In the field of signal transmission lines, the configuration of a characteristic impedance is related to the quality of a signal transmitted by a transmission line. In detail, when a transmission line transmits a signal back and forth with a current, a potential difference between the transmitted signal and the returned signal is caused by the impedance relationship, and the characteristic impedance is the key to causing the potential difference of the back and forth signal in a transmission line.

[0003] In the field of electricity, the characteristic impedance of a transmission line can be described by the following formula:

[0004]

[0005] wherein Z0 represents the characteristic impedance of the transmission line, R represents the resistance value of a unit length of the transmission line, L represents the inductance value of the unit length of the transmission line, C represents the capacitance value of the unit length of the transmission line, G represents the conductance value of a unit length of the dielectric material of the transmission line, j is a unit of imaginary number, and w is an angular frequency.

[0006] In the field of high-frequency transmission, the value of w will be much higher than the values of R and G, and under the assumption that the transmission line approaches an ideal lossless state, the values of R and G will approach zero. Therefore, the above formula of the characteristic impedance can be simplified as:

[0007]

[0008] Therefore, there is a direct relationship between Z0 and C. Further, according to the maximum power transfer theorem, the impedance of the transmission line and the complex conjugate of the impedance of the load need to be equal to ensure that the transmission line transmits signals at maximum power, thus deriving the concept of impedance matching between the transmission line and the load. When the transmission line inadvertently generates parasitic charges while transmitting signals, the capacitance of the transmission line is changed from the original factory setting, and this change will cause the impedance between the transmission line and the load to be mismatched. In other words, when the capacitance of a transmission line changes, the impedance between the transmission line and the load will also change, thereby negatively affecting the signal quality transmitted by the transmission line, such as the signal-to-noise ratio caused by parasitic charges. This situation is more pronounced in the high-frequency transmission field, so reducing the capacitance effect of the transmission line when transmitting signals is a very important issue in the high-frequency transmission field.

[0009] Referring to FIG. 1, FIG. 6A As shown in FIG. 1, a common transmission structure can have a ground line layer 101 on a substrate 100, an intermediate line layer 102 on the ground line layer 101, and a unidirectional transmission line layer 103 on the intermediate line layer 102. The intermediate line layer 102 includes dielectrics and lines disposed on the dielectrics. The unidirectional transmission line layer 103 also includes dielectrics and lines disposed on the dielectrics. Therefore, the lines of the unidirectional transmission line layer 103 and the lines of the ground line layer 101 are separated by dielectrics, forming two conductive plates in the capacitance effect. According to electricity, the generation of capacitance in the capacitance effect is proportional to the corresponding area of the two conductive plates, so reducing the area of either of the two conductive plates can reduce the strength of the capacitance generated.

[0010] Referring to FIG. 1, FIG. 6BAs shown, in one example, a conventional transmission structure forms an opening 104 in the ground circuit layer 101 to reduce the area of ​​the ground circuit layer 101. However, when the substrate 100 is a high-density substrate, such as a thin film substrate or a redistribution layer (RDL), the formation of the opening 104 is highly susceptible to circuit collapse. In other words, the intermediate circuit layer 102 and the unidirectional transmission circuit layer 103 above the opening 104 may collapse and sag, damaging the overall circuit structure and causing unstable transmission signals. Furthermore, the collapsed circuit structure can also cause difficulties in soldering. While a larger opening 104 diameter theoretically reduces the capacitance effect, the circuit collapse problem becomes more pronounced. For example, when the opening 104 is tens of microns (μm), the circuitry above it is very likely to collapse. Therefore, currently, it is not feasible to create the opening 104 in the ground circuit layer 101 of the conventional transmission structure to reduce the capacitance effect.

[0011] See also FIG. 7A to FIG. 7C As shown in another example, a common transmission line structure has multiple stacked circuit layers, such as a bottom ground circuit layer 201, a middle transmission circuit layer 202 disposed above the bottom ground circuit layer 201, and an external connection layer 203 disposed above the middle transmission circuit layer 202. The external connection layer 203 has multiple electrode pads 204 for transmitting a differential signal, and the middle transmission circuit layer 202 has a pair of lines 205 for transmitting the differential signal.

[0012] Please also refer to FIG. 7D and FIG. 8 As shown, if the positions of the electrode pads 204 are along FIG. 7D A cross-section line Z shown in FIG. 1 shows a cross-section line Z. FIG. 8 The cross-sectional view shown. FIG. 8 In the figure, it can be seen that the electrode pads 204 have at least one opening 206 between them. While the at least one opening 206 can slightly reduce the capacitance effect between the external connection layer 203 and the bottom ground circuit layer 201 near the electrode pads 204, its effect is limited. This is because creating additional openings in the bottom ground circuit layer 201 may lead to circuit collapse, which is not feasible.

[0013] However, the at least one opening 206 between the electrode pads 204 has a limitation in space planning in terms of circuit arrangement, because the electrode pads of the high-frequency transmission line will tend to increase the overall volume of all electrode pads as the technology develops. In other words, when the volume of the electrode pads 204 tends to increase, the volume of the at least one opening 206 on the external connection layer 203 will decrease, thereby increasing the generation of capacitive effects near the electrode pads 204. Therefore, in the technical field of high-frequency transmission lines, further reducing the generation of capacitive effects is a problem to be solved. SUMMARY

[0014] The present application provides a circuit structure capable of reducing capacitive effects and preventing circuit collapse, which, when applied to the technical field of high-frequency transmission lines, can further reduce capacitive effects and prevent circuit collapse compared to prior art circuit structures, thereby improving the signal quality of high-frequency signal transmission.

[0015] The circuit structure capable of reducing capacitive effects and preventing circuit collapse of the present application comprises:

[0016] An element connection layer having an electrode pad and an upper conductive circuit; wherein the upper conductive circuit is arranged around the electrode pad, and an upper space is formed between the electrode pad and the upper conductive circuit to insulate them from each other;

[0017] A bottom circuit layer having a bottom conductive circuit and an electrode pad support structure located directly below the electrode pad; wherein the bottom conductive circuit is arranged around the electrode pad support structure, and a bottom space is formed between the electrode pad support structure and the bottom conductive circuit to insulate them from each other;

[0018] A wiring layer; wherein the bottom circuit layer, the wiring layer, and the element connection layer are arranged in layers, and the wiring layer is arranged between the element connection layer and the bottom circuit layer; wherein the wiring layer has a wiring dielectric material arranged between the electrode pad and the electrode pad support structure.

[0019] The arrangement of the upper space and the bottom space helps to reduce the strength of the capacitive effects generated between the element connection layer and the bottom circuit layer. Moreover, because the electrode pad support structure is formed directly below the electrode pad, the electrode pad can be adequately supported to prevent collapse. In other words, the electrode pad of the element connection layer can be supported by the wiring dielectric material of the wiring layer and the electrode pad support structure of the bottom circuit layer. In addition, the electrode pad support structure is an insulated structure, so the amount of charge possessed by the electrode pad support structure does not change, and the generation of capacitive effects can be prevented.

[0020] Thus, the circuit structure capable of reducing the capacitive effect and preventing circuit collapse of the present application can help to reduce the capacitive effect between the component connection layer and the bottom circuit layer more than the prior art circuit structure, so as to maintain the impedance of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse from changing with the transmission of signals. Thus, when the circuit structure capable of reducing the capacitive effect and preventing circuit collapse transmits a high-frequency signal, the impedance of a circuit load electrically connected thereto can be matched with each other, thereby improving the signal-to-noise ratio quality of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse in transmitting the high-frequency signal. In addition, when the component connection layer and the trace layer are prevented from collapsing, the present application also ensures that the high-frequency signal transmitted by the component connection layer and the trace layer can be stably transmitted, and also ensures that the component connection layer can normally solder other components, such as electrically connecting a resistor, an inductor or a capacitor, thereby integrating more circuit structures for subsequent applications. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without any creative effort.

[0022] FIG. 1A A schematic view of a component connection layer in a first embodiment of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse of the present application.

[0023] FIG. 1B A schematic view of a trace layer in the first embodiment of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse of the present application.

[0024] FIG. 1C A schematic view of a bottom circuit layer in the first embodiment of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse of the present application.

[0025] FIG. 1D A schematic view of the first embodiment of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse of the present application.

[0026] FIG. 2A A cross-sectional schematic view of the first embodiment of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse of the present application.

[0027] FIG. 2B A cross-sectional schematic view of an electrical connection application in the first embodiment of the circuit structure capable of reducing the capacitive effect and preventing circuit collapse of the present application.

[0028] FIG. 2C A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0029] FIG. 3A A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0030] FIG. 3B A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0031] FIG. 3C A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0032] FIG. 3D A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0033] FIG. 4 A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0034] FIG. 5A A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0035] FIG. 5B A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0036] FIG. 5C A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0037] FIG. 6A A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0038] FIG. 6B A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0039] FIG. 7A A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0040] FIG. 7B A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0041] FIG. 7C A cross-sectional view of the circuit structure of the present application for reducing the capacitive effect and preventing circuit collapse in the first embodiment.

[0042] FIG. 7D is a schematic diagram of the common transmission line structure.

[0043] FIG. 8 is a schematic diagram of the cross section of the common transmission line structure. DETAILED DESCRIPTION

[0044] The present application provides a transmission line structure capable of reducing the capacitive effect and preventing circuit collapse.

[0045] Referring to FIG. 1A to FIG. 1C in a first embodiment, the transmission line structure capable of reducing the capacitive effect and preventing circuit collapse has a bottom circuit layer 1, a trace layer 2, and a component connection layer 3.

[0046] The bottom circuit layer 1 has an electrode pad support structure 11 and a bottom conductive circuit 12. The bottom conductive circuit 12 is disposed around the electrode pad support structure 11, and a bottom space 13 is formed between the electrode pad support structure 11 and the bottom conductive circuit 12 to insulate them from each other. The trace layer 2 has a trace dielectric material 20. The component connection layer 3 has an electrode pad 31 and an upper conductive circuit 32. The upper conductive circuit 32 is disposed around the electrode pad 31, and an upper space 33 is formed between the electrode pad 31 and the upper conductive circuit 32 to insulate them from each other.

[0047] Referring to FIG. 1D and FIG. 2A together, FIG. 1D is FIG. 1A to FIG. 1C is a structure in which the bottom circuit layer 1, the trace layer 2, and the component connection layer 3 are stacked, and FIG. 2A is a schematic diagram of a cross section taken along a cross section line A shown in FIG. 1D As shown in FIG. 2A The bottom circuit layer 1, the trace layer 2, and the component connection layer 3 are stacked. The bottom circuit layer 1, the trace layer 2, and the component connection layer 3 are disposed in a stacked manner, and the trace layer 2 is disposed between the bottom circuit layer 1 and the component connection layer 3. The trace dielectric material 20 of the trace layer 2 is disposed between the electrode pad support structure 11 of the bottom circuit layer 1 and the electrode pad 31 of the component connection layer 3. As for the bottom circuit layer 1 and the component connection layer 3 disposed in a stacked manner, the electrode pad support structure 11 is disposed directly below the electrode pad 31.

[0048] Thus, the provision of the bottom gap 13 and the upper gap 33 helps to reduce the strength of the capacitance effect between the bottom routing layer 1 and the component connection layer 3, in other words, to reduce the occurrence of the capacitance effect. Also, because the electrode pad support structure 11 is formed directly underneath the electrode pad 31, the electrode pad 31 can be adequately supported to prevent collapse. That is, the electrode pad 31 of the component connection layer 3 can be supported by the routing dielectric 20 of the routing layer 2 and the electrode pad support structure 11 of the bottom routing layer 1. In addition, the electrode pad support structure 11 is an insulated structure, so the amount of charge held by the electrode pad support structure 11 does not change, and the electrode pad support structure 11 can be prevented from collapsing. Thus, the circuit structure that can reduce the capacitance effect and prevent circuit collapse can help to reduce the occurrence of the capacitance effect between the bottom routing layer 1 and the component connection layer 3 more than prior art circuit structures, to more maintain the impedance of the circuit that can reduce the capacitance effect and prevent the impedance from changing as signals are transmitted.

[0049] Preferably, in the first embodiment, the upper conductive routing 32 and the bottom conductive routing 12 are commonly grounded. The electrode pad support structure 11 is configured to maintain electrical neutrality when provided, and the electrode pad support structure 11 is insulated and not grounded. The bottom routing layer 1 further includes a bottom dielectric 10, and the bottom dielectric 10 is provided in the bottom gap 13. The routing layer 2 further includes a transmission line 21, the transmission line 21 is provided in the routing dielectric 20, and the transmission line 21 is electrically connected to the electrode pad 31 of the component connection layer 3. The component connection layer 3 further includes an upper dielectric 30, and the upper dielectric 30 is provided in the upper gap 33. In other words, the circuit structure of the first embodiment is a cavity-free hardware, the bottom gap 13 and the upper gap 33 are both filled with the bottom dielectric 10 and the upper dielectric 30, which are solid dielectrics, rather than having a cavity.

[0050] In another embodiment, the bottom dielectric 10 provided in the bottom gap 13 is a liquid dielectric. However, whether the bottom dielectric 10 is the liquid dielectric or a solid dielectric, the electrode pad support structure 11 surrounded by the bottom dielectric 10 can be configured to support the electrode pad 31 directly underneath the electrode pad 31 to prevent collapse of the electrode pad 31. In general, even in an embodiment in which the bottom gap 13 and the upper gap 33 are both hollow, the electrode pad 31 can be supported by the routing dielectric 20 and the electrode pad support structure 11 provided directly underneath the electrode pad 31 to prevent collapse.

[0051] Preferably, the bottom wiring layer 1 is disposed on a substrate 100 or a printed circuit board (PCB). Specifically, the bottom wiring layer 1 has two opposing surfaces, one of which is connected to the trace layer 2, while the other surface, facing away from the trace layer 2, is connected to the substrate 100. In this embodiment, the substrate 100 is a thin film substrate. In other embodiments, the substrate 100 may also be a redistribution layer (RDL).

[0052] See also FIG. 2B As shown, for example, the substrate 100 which is the redistribution layer has a first external circuit 110 , and the first external circuit 110 is electrically connected to the bottom conductive trace 12 of the bottom trace layer 1 so that both are grounded.

[0053] When the component connection layer 3 and the wiring layer 2 are prevented from collapsing, the present invention also ensures that the signal transmitted by the component connection layer 3 and the wiring layer 2 can be transmitted stably, and also ensures that the component connection layer 3 can be normally soldered (soldering) to other components. For example, the electrode pad 31 of the component connection layer 3 is exposed and electrically connected to a second external circuit 120 with its back facing the wiring layer 2. The second external circuit 120 may include various circuit elements such as a resistor, an inductor or a capacitor. Therefore, after electrically connecting the second external circuit 120, the present invention can further integrate more diverse circuit structures for subsequent applications. Furthermore, the second external circuit 120 electrically connected to the electrode pad 31 of the component connection layer 3 that is prevented from collapsing can also be a pin 122 of a chip 121 or an input / output (I / O) electrode of an optoelectronic component. In this way, the bottom wiring layer 1 and the component connection layer 3 electrically connecting different circuits can be further applied in a 3D (3D) circuit architecture, so that the 3D integrated circuit has a more stable and collapse-proof construction foundation.

[0054] In this embodiment, the transmission line 21 is used to transmit a high-frequency signal. The impedance of the circuit structure that reduces capacitance and prevents circuit collapse does not change when transmitting the high-frequency signal, so it can still match the impedance of a circuit load to which it is electrically connected, thereby improving the signal-to-noise ratio (SNR) quality of the high-frequency signal transmitted by the circuit structure that reduces capacitance and prevents circuit collapse. For detailed technical principles for maintaining the quality of high-frequency signal transmission, please refer to the operating principles of the transmission line described in the background technology section.

[0055] The inventors of this application have verified through computer simulation that the bottom spacer 13 formed on the bottom circuit layer 1 can indeed maintain the state of optimal impedance matching between the circuit structure of the present invention, which can reduce the capacitance effect and prevent circuit collapse, and the circuit load. The computer simulation simulates the insertion loss and return loss of a signal transmitted between frequencies of 0 and 70 GHz, and compares the changes in the insertion loss and return loss when the bottom spacer 13 is formed and when it is not formed. The simulation results show that when the bottom spacer 13 is formed, the insertion loss is closer to zero, and the return loss is smaller than when the bottom spacer 13 is not formed. This verifies that the present application can indeed help improve the quality of transmitted signals.

[0056] Furthermore, in the first embodiment, a connection end 34 is formed at one end of the electrode pad 31 facing a first direction Dir1, and the connection end 34 is connected to the transmission line 21 of the routing layer 2. Moreover, a first width L1 of the electrode pad 31 tapers along the first direction Dir1. A transmission end 14 is formed at one end of the electrode pad support structure 11 facing the first direction Dir1. Furthermore, a second width L2 of the electrode pad support structure 11 tapers along the first direction Dir1. In other words, in this embodiment, the transmission end 14 of the electrode pad support structure 11 and the connection end 34 of the electrode pad 31 both point to the first direction Dir1, that is, the direction in which the transmission line 21 extends in the routing layer 2. In one embodiment, the electrode pad 31 whose first width L1 tapers along the first direction Dir1 and the electrode pad support structure 11 whose second width L2 tapers along the first direction Dir1 have the same funnel shape. In another embodiment, the electrode pad 31 whose first width L1 is gradually reduced along the first direction Dir1 and the electrode pad support structure 11 whose second width L2 is gradually reduced along the first direction Dir1 are different funnel shapes.

[0057] Please also refer to FIG. 2C As shown, FIG. 2C It is along FIG. 1D A schematic cross-sectional view of a small portion taken along section line B is shown. The length of the bottom gap 13 between the electrode pad support structure 11 and the bottom conductive trace 12 varies depending on the location on the bottom trace layer 1. The bottom gap 13 is defined as a micro-opening 15 less than or equal to 10 micrometers (μm) between the transmission end 14 of the electrode pad support structure 11 and the bottom conductive trace 12. In one embodiment, the bottom gap 13 is the shortest distance between the transmission end 14 of the electrode pad support structure 11 and the bottom conductive trace 12.

[0058] In the first embodiment as shown in FIG. 1A to FIG. 1C , the transmission end 14 of the electrode pad support structure 11 is directly below the connection end 34 of the electrode pad 31. Thus, the element connection layer 3 above the micro opening 15 corresponds to the upper space 33. The area of the upper space 33 is significantly larger than the area of the micro opening 15, that is, the area of the micro opening 15 is significantly smaller than the area of the upper space 33.

[0059] Referring to FIG. 3A to FIG. 3C , in a second embodiment, the connection end 34 of the electrode pad 31 and the transmission end 14 of the electrode pad support structure 11 are staggered, and the connection end 34 of the electrode pad 31 is above the bottom conductive line 12. The micro opening 15 of less than or equal to 10 μm in the bottom line layer 1 is small enough to ensure that the circuit structure above it does not collapse. In other words, the trace layer 2 and the element connection layer 3 above the micro opening 15 will be sufficiently supported by the bottom line layer 1. Therefore, in the second embodiment, even though the micro space 15 directly below the electrode pad 31 is covered, the electrode pad 31 is still stable enough to prevent collapse.

[0060] Referring to FIG. 3D and FIG. 4 , the structure of the bottom line layer 1, the trace layer 2 and the element connection layer 3 after being stacked is shown in FIG. 3D , and FIG. 3A to FIG. 3C is a partial cross-sectional view along the cross-sectional line C shown in FIG. 4 . As shown in FIG. 3D , the element connection layer 3 above the micro opening 15 corresponds to the electrode pad 31. FIG. 4

[0061] In addition, comparing FIG. 2C and FIG. 4 , it can be seen that in the first embodiment shown in FIG. 2C , the trace layer 2 above the micro opening 15 corresponds to the transmission line 21. However, in the second embodiment shown in FIG. 4 , the trace layer 2 above the micro opening 15 does not correspond to the transmission line 21. These two different structures will cause physical changes in signal transmission, thereby meeting different needs for transmitting high-frequency signals.

[0062] Referring to FIG. 5A to FIG. 5C ​As shown in a third embodiment, the element connection layer 3 further has a plurality of the electrode pads 31, and each of the electrode pads 31 is insulated from each other by the upper dielectric material 30. The trace layer 2 further has a plurality of the transmission lines 21, each of the transmission lines 21 is electrically connected to one of the electrode pads 31 of the element connection layer 3, and each of the transmission lines 21 is insulated from each other by the trace dielectric material 20. In this way, the transmission lines 21 and the electrode pads 31 can be used to transmit a plurality of channels of high frequency signals. For example, two of the transmission lines 21 in cooperation with two of the electrode pads 31 can be used as a differential signaling pair of a single channel (strip line). Three of the transmission lines 21 in cooperation with three of the electrode pads 31 can be used for more versatile signal transmission applications.

[0063] As shown in a third embodiment, FIG. 3A and FIG. 3C In the second embodiment, the electrode pad support structure 11 is a first funnel shape, and the shortest diameter of the first funnel shape is a funnel diameter D1. The electrode pad 31 is a second funnel shape, and the shortest diameter of the second funnel shape is an upper funnel diameter D2. The funnel diameter D1 is greater than the upper funnel diameter D2, so as to ensure that the electrode pad support structure 11 can closely support the structure of the electrode pad 31 close to the connection end 34. In another embodiment, the funnel diameter D1 can also be equal to the upper funnel diameter D2, so as to ensure that the electrode pad support structure 11 can support the structure of the electrode pad 31 close to the connection end 34.

[0064] As shown in a third embodiment, FIG. 5B and FIG. 5C FIG. 5B In the third embodiment, the electrode pad support structure 11 is a first funnel shape, and the shortest diameter of the first funnel shape is the funnel diameter D1. The transmission lines 21 of the trace layer 2 are clustered in the first direction Dir1 to have a clustered trace diameter D3, and the funnel diameter D1 is greater than or equal to the clustered trace diameter D3. In other words, the clustered trace diameter D3 is a clustered trace width, and the second width L2 of the electrode pad support structure 11 tapering in the first direction Dir1 is greater than or equal to the clustered trace width. In this way, the electrode pad support structure 11 can closely support the transmission lines 21 extended by the trace layer 2.

Claims

1. A circuit structure capable of reducing capacitance effect and preventing circuit collapse, characterized in that: The element connection layer further comprises: An upper dielectric material disposed in the upper spacing. The bottom routing layer further comprises: A bottom dielectric material disposed in the bottom spacing.

2. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 1, wherein The bottom dielectric material is a liquid dielectric material. The routing layer further comprises:

3. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 1, wherein A transmission line disposed in the routing dielectric material and electrically connected to the electrode pad of the element connection layer. An end of the electrode pad facing a first direction forms a connection end, and a first width of the electrode pad tapers along the first direction, and the connection end of the electrode pad is electrically connected to the transmission line.

4. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 3, wherein An end of the electrode pad support structure facing the first direction forms a transmission end, and a second width of the electrode pad support structure tapers along the first direction; 5. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 1, wherein Wherein the transmission end of the electrode pad support structure and the bottom conductive line have a micro opening less than or equal to 10 microns. The connection end of the electrode pad and the transmission end of the electrode pad support structure are staggered, and the connection end of the electrode pad is located above the bottom conductive line.

6. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 5, wherein, The transmission end of the electrode pad support structure is directly below the connection end of the electrode pad.

7. The line structure capable of reducing the capacitance effect and preventing the circuit from collapsing according to claim 6, wherein, The element connection layer further has a plurality of electrode pads, and the upper dielectric material is disposed between each of the electrode pads to insulate each other; Wherein the routing layer further has a plurality of transmission lines, each of the transmission lines is electrically connected to one of the electrode pads, and the routing dielectric material is disposed between each of the transmission lines to insulate each other.

8. The line structure capable of reducing the capacitance effect and preventing the circuit from collapsing according to claim 7, wherein, An end of the electrode pad support structure facing a first direction forms a transmission end, and a second width of the electrode pad support structure tapers along the first direction; 9. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 7, wherein, Wherein the transmission line of the routing layer is bundled along the first direction and has a bundled routing width, and the second width of the transmission end is greater than or equal to the bundled routing width.

10. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 2, wherein, A surface of the bottom routing layer facing away from the routing layer is provided for connecting a substrate, and the bottom conductive line of the bottom routing layer is electrically connected to a first external circuit of the substrate; Wherein a surface of the element connection layer facing away from the routing layer is provided for disposing a second external circuit, and the electrode pad is electrically connected to the second external circuit.

11. The line structure capable of reducing the capacitance effect and preventing the circuit from collapsing according to claim 10, wherein, ​ ​ 12. The line structure capable of reducing a capacitance effect and preventing a circuit collapse according to claim 1, wherein, ​ ​

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