Light emitting diode and light emitting device

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode and a light-emitting device.The light-emitting diode comprises a substrate, two light-emitting structures, an insulation structure and a bridging electrode, the light-emitting structures are arranged on the substrate, an isolation groove is formed between every two adjacent light-emitting structures, and each light-emitting structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer; at least part of the insulation structure is located in the isolation groove, the insulation structure covers part of the light-emitting structure, the insulation structure is provided with an opening, the opening is located in the isolation groove and correspondingly arranged on the substrate, the bridging electrode covers the insulation structure and is connected with the substrate through the opening, one end of the bridging electrode is electrically connected with the first semiconductor layer of the light-emitting structure, and the other end of the bridging electrode is electrically connected with the second semiconductor layer. The other end of the bridging electrode is electrically connected with the second semiconductor layer of the other light-emitting structure. By means of the arrangement, occurrence of micro electric leakage channels can be reduced, and the reliability of the light-emitting diode is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode and a light emitting device. BACKGROUND

[0002] High-voltage LED chips have been widely used in COB lighting, television backlighting and other fields due to their advantages of high integration, low driving current, low AC / DC conversion efficiency loss, and low requirement for driving power supply. In the chip manufacturing process, the bridging structure formed by the stacking of metal and insulating layer is the key to high-voltage chips. When reliability problems occur, most of the abnormal points of high-voltage chip failure are on the bridging structure. As the technology matures and the performance requirements for high-voltage chips become higher and higher, improving the reliability of the bridging structure is an important issue.

[0003] The bridging structure of the traditional high-voltage chip is: first, an insulating layer is made between adjacent chips, and then a metal electrode is evaporated on the insulating layer to form an interconnection. However, the insulating layer is not a 100% insulating layer. Taking SiO2 film as an example, its resistivity is affected by impurities. Since impurities are easily introduced during the deposition process, its resistivity is generally only 10 7 ~10 8 Ω·cm. Moreover, the resistivity of SiO2 film is related to the environmental temperature. When the temperature rises, the ion mobility in the SiO2 film layer increases, which reduces the resistivity of the SiO2 film. The SiO2 film prepared by PECVD is porous and loose, containing a large density of O-H, N-O, and Si-H bonds, which affects the stability and optical performance of the film layer. For example, the absorption peaks of Si-H and O-H at a wavelength of 630 nm increase the film layer loss. Annealing in N2 or O2 atmosphere can make the film layer densify, eliminate H bonds and residual stress. The annealing temperature has a certain influence on the performance of the film layer. After annealing at 800℃, the O-H absorption disappears, but the N-H and Si-H absorption needs to be annealed at 1100℃ to weaken. The process temperature of LED chip is less than 600℃, because too high temperature will affect the ohmic contact characteristics of epitaxy. In the traditional high-voltage LED chip, the SiO2 insulating layer on the side wall of the bridging structure spans the P-GaN layer, the MQW layer, and the N-GaN layer. The insulating properties of SiO2 deeply affect the small current leakage characteristics of the chip. Especially in small size LED chips such as Mini LED and Micro LED, due to the production of high-voltage chips, the area ratio of the side wall covered by the insulating layer is larger, and the proportion of the micro leakage channel formed in the SiO2 insulating layer on the side wall is also larger, so the probability of electrical abnormality is higher.

[0004] It should be noted that the information disclosed in this BACKGROUND section is only intended to increase an understanding of the general context of the present application and should not be considered as admitting or in any form suggesting that this information forms the prior art that is known to those skilled in the art SUMMARY The present application provides a light emitting diode, which comprises a substrate, at least two light emitting structures, an insulation structure and a bridge electrode.

[0005] The light emitting structures are arranged on the substrate, and each two adjacent light emitting structures are separated by an isolation groove. The light emitting structures are electrically connected to each other. Each light emitting structure comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer. The first semiconductor layer is arranged on the substrate. The light emitting layer is arranged between the first semiconductor layer and the second semiconductor layer. At least part of the insulation structure is arranged in the isolation groove. The insulation structure covers part of the light emitting structure. The insulation structure has an opening, which is arranged in the isolation groove and corresponds to the substrate. The bridge electrode covers the insulation structure and is connected to the substrate through the opening. One end of the bridge electrode is electrically connected to the first semiconductor layer of the light emitting structure. The other end of the bridge electrode is electrically connected to the second semiconductor layer of the other light emitting structure.

[0006] The present application also provides a light emitting device, which uses any of the above light emitting diodes.

[0007] The present application provides a light emitting diode and a light emitting device. By arranging the insulation structure, the micro-current conduction path of the insulation structure is broken, and the problem of micro-leakage caused by the insufficient density or impurity elements of the insulation structure on the sidewall of the high-voltage LED chip is solved. At the same time, the coverage area of the insulation structure at the bridge is reduced, the light absorption effect is reduced, and the light brightness is improved.

[0008] Other features and advantages of the present application will be described in the following description, and some technical features and advantages can be obtained from the description, or can be understood by implementing the present application. BRIEF DESCRIPTION OF DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, some of the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without any creative effort.

[0010] Figure 1 is a structural schematic diagram of a conventional light emitting diode; Figure 2 is a structural schematic diagram of a light emitting diode provided by the first embodiment of the present application; Figure 3 is a top view structural schematic diagram of the light emitting diode provided by the first embodiment of the present application; Figure 4is a structural schematic diagram of a light emitting diode provided by a second embodiment of the present application; Figure 5 is a structural schematic diagram of a light emitting diode provided by a third embodiment of the present application; Figure 6 is a structural schematic diagram of a light emitting diode provided by a fourth embodiment of the present application.

[0011] Reference signs: 10 - substrate; 12 - light emitting structure; 121 - first semiconductor layer; 122 - light emitting layer; 123 - second semiconductor layer; 14 - insulating structure; 141 - first part; 142 - second part; 16 - bridge electrode; 18 - isolation groove; 20 - transparent conductive layer; 21 - first pad; 22 - second pad; 24 - insulating layer; 30 - opening; W1 - size of the opening; W2 - size of the isolation groove; H1 - height of the light emitting structure; L1 - length of the light emitting structure. DETAILED DESCRIPTION

[0012] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application; as long as there is no conflict, the technical features in the different embodiments of the present application described below can be combined with each other; based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0013] In the description of the present application, it should be understood that the terms "center", "transverse", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or component referred to must have a particular orientation, or be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more. In addition, the term "comprising" and any variation thereof means "at least including".

[0014] Please refer to Figure 2 and Figure 3 , Figure 2is a structural schematic diagram of a light emitting diode provided by a first embodiment of the present application, Figure 3 is a top view structural schematic diagram of the light emitting diode provided by the first embodiment of the present application. To achieve at least one of the above advantages or other advantages, the first embodiment of the present application provides a light emitting diode. As shown in the figure, the light emitting diode includes a substrate 10, at least two light emitting structures 12, an insulating structure 14, and a bridge electrode 16.

[0015] The substrate 10 is an insulating substrate 10. In the illustrated embodiment, the substrate 10 is a sapphire substrate, but the present application is not limited thereto. In some embodiments, the substrate 10 can be a patterned sapphire substrate, and the surface of the substrate 10 can be subjected to a roughening treatment to improve light extraction performance.

[0016] The light emitting structure 12 is disposed on the substrate 10. The plurality of light emitting structures 12 can be connected in series, connected in parallel, or connected in series-parallel, etc. In the present embodiment, the number of light emitting structures 12 is 2, and the two light emitting structures 12 are connected in series. The two adjacent light emitting structures 12 have an isolation groove 18 therebetween, which is used to separate the two light emitting structures 12 to avoid direct contact therebetween. The light emitting structures 12 are electrically connected to each other, for example, by the bridge electrode 16 to achieve electrical interconnection.

[0017] Each light emitting structure 12 includes a first semiconductor layer 121, a light emitting layer 122, and a second semiconductor layer 123. The first semiconductor layer 121 is disposed on the substrate 10, and the light emitting layer 122 is located between the first semiconductor layer 121 and the second semiconductor layer 123.

[0018] The first semiconductor layer 121 can be an N-type semiconductor layer, which can provide electrons to the light emitting layer 122 under the action of a power source. In some embodiments, the first semiconductor layer 121 includes an N-type doped nitride layer. The N-type doped nitride layer can include an N-type impurity. The N-type impurity can include one or a combination of Si, Ge, and Sn.

[0019] The light emitting layer 122 can be a quantum well structure (QW). In some embodiments, the light emitting layer 122 can also be a multiple quantum well structure (MQW) including a plurality of quantum well layers (Well) and a plurality of quantum barrier layers (Barrier) arranged in a repeating pattern, such as a GaN / AlGaN, InAlGaN / InAlGaN, or InGaN / AlGaN multiple quantum well structure. In addition, the composition and thickness of the well layers within the light emitting layer 122 determine the wavelength of the generated light. To improve the light emitting efficiency of the light emitting layer 122, the depth of the quantum well, the number of pairs of quantum well and quantum barrier, the thickness, and / or other characteristics can be varied within the light emitting layer 122.

[0020] The second semiconductor layer 123 can be a P-type semiconductor layer that provides holes to the light emitting layer 122 under the action of a power source. In some embodiments, the second semiconductor layer 123 includes a P-type doped nitride layer. The P-type doped nitride layer can include one or more P-type impurities. The P-type impurities can include one or a combination of Mg, Zn, and Be. The second semiconductor layer 123 can be a single layer structure or a multi-layer structure having different compositions.

[0021] In some embodiments, the first semiconductor layer 121, the light emitting layer 122, and the second semiconductor layer 123 can be made of aluminum gallium indium nitride, gallium nitride, aluminum gallium nitride, aluminum indium phosphide, aluminum gallium indium phosphide, or gallium arsenide or aluminum gallium arsenide. The first semiconductor layer 121 or the second semiconductor layer 123 can include a cladding layer that provides electrons or holes and can include other layer materials, such as a current spreading layer, a window layer, or an ohmic contact layer, arranged as different multi-layers according to different doping concentrations or component contents. The light emitting layer 122 is a region that provides light radiation for electron and hole recombination and can be selected from different materials according to different light emitting wavelengths. The light emitting layer 122 can be a single quantum well or a periodic structure of multiple quantum wells. The composition ratio of the semiconductor material in the light emitting layer 122 is adjusted to radiate light of different wavelengths.

[0022] Part of the insulating structure 14 is located in the isolation groove 18, and the insulating structure 14 covers part of the light emitting structure 12. The insulating structure 14 adopts a split design, that is, the insulating structure 14 is not a complete continuous insulating structure, but at least one part covers one of the two adjacent light emitting structures 12, and another part covers the other of the two adjacent light emitting structures 12, and the two parts do not directly contact. The insulating structure 14 has an opening 30 located in the isolation groove 18 and corresponding to the substrate 10 disposed thereon, and the opening 30 exposes part of the substrate 10. The material of the insulating structure 14 can include insulating materials such as silicon oxide (SiO2), aluminum oxide, silicon nitride, titanium oxide, etc.

[0023] The bridge electrode 16 covers the insulating structure 14 and connects the substrate 10 through the opening 30. One end of the bridge electrode 16 is electrically connected to the first semiconductor layer 121 of the light emitting structure 12, and the other end of the bridge electrode 16 is electrically connected to the second semiconductor layer 123 of the other light emitting structure 12. The bridge electrode 16 can be used to electrically connect multiple light emitting structures 12. The material of the bridge electrode 16 can include metal materials.

[0024] Conventional Figure 1The insulating structure between the adjacent chips of the shown light emitting diode is entirely covered on the substrate, and then the metal electrode is evaporated on the insulating structure to form the interconnection bridge electrode. However, the insulating structure is not a 100% insulating layer. Taking SiO2 film as an example, its resistivity is affected by impurities contained therein, and since impurities are easily introduced during the deposition process, its resistivity is generally only 107~108Ω·cm. Moreover, the resistivity of the SiO2 film is also related to the ambient temperature, and when the temperature rises, the resistivity of the SiO2 film layer decreases due to the increase of ion mobility in the SiO2 film layer. The SiO2 film layer prepared by PECVD is porous and loose, containing a large density of O-H, N-O and Si-H bonds, which affects the stability and optical properties of the film layer. For example, the absorption peaks of Si-H and O-H at a wavelength of 630 nm increase the film layer loss. Annealing in N2 or O2 can make the film layer densify, eliminate H bonds and residual stress, and the annealing treatment temperature has a certain influence on the performance of the film layer. After annealing at 800℃, the O-H absorption disappears, but the N-H and Si-H absorptions need to be annealed at 1100℃ to weaken. The process temperature of the LED chip is less than 600℃, and too high a temperature will affect the ohmic contact characteristics of the epitaxial layer. In the traditional high-voltage LED chip, the SiO2 insulating structure of the bridge side wall spans the P-GaN layer, the MQW layer and the N-GaN layer, and the insulating properties of SiO2 deeply affect the small current leakage characteristics of the chip. Especially in the small size LED chip, such as Mini LED and Micro LED, since the high-voltage chip is made, the area ratio of the side wall covered by the insulating layer is larger, and the micro leakage channel formed in the SiO2 insulating layer covered by the side wall accounts for a larger proportion, and the probability of electrical abnormality is higher.

[0025] By adopting the setting of the split type insulating structure 14, the micro current conduction channel of the insulating structure is broken (that is, by setting the opening 30, the insulating structure is prevented from completely and continuously covering the gap between the two adjacent light emitting structures 12), the problem of micro leakage caused by the insufficient density of the insulating structure at the side wall of the high-voltage LED chip or the impurity elements is solved. At the same time, the coverage area of the insulating structure at the bridge is reduced, the light absorption influence is reduced, and the light brightness is improved. Moreover, the problem of the contradiction between the expansion of the bridge electrode 16 to improve the performance of the chip and the poor small current performance caused by the excessive coverage area of the insulating structure is also solved.

[0026] In some embodiments, the insulating structure 14 includes a first portion 141 and a second portion 142. The first portion 141 covers part of the light-emitting layer 122 and part of the first semiconductor layer 121 of the light-emitting structure 12, and the second portion 142 covers part of the second semiconductor layer 123, part of the light-emitting layer 122 and part of the first semiconductor layer 121 of another light-emitting structure 12. The first portion 141 and the second portion 142 are arranged at intervals, and the aforementioned opening 30 is formed between the first portion 141 and the second portion 142, thereby breaking the micro-current conduction path of the insulating structure, reducing the occurrence of micro-leakage paths, and improving the reliability of the light-emitting diode.

[0027] In some embodiments, the light-emitting diode further includes a first pad 21, a second pad 22 and an insulating layer 24. The transparent conductive layer 20 is arranged on the second semiconductor layer 123. The transparent conductive layer 20 can be made of a transparent conductive material, which can be adaptively selected according to the doping condition of the surface layer (such as the p-type GaN surface layer) of the second semiconductor layer 123. In some embodiments, the transparent conductive material can include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO) or zinc oxide (ZnO), but the embodiments of the present disclosure are not limited thereto.

[0028] The first pad 21 is electrically connected to the first semiconductor layer 121, and the second pad 22 is connected to the transparent conductive layer 20. The first pad 21 and the second pad 22 are located on different light-emitting structures 12. The first pad 21 and the second pad 22 include a metal material.

[0029] The insulating layer 24 covers the light emitting structure 12, the bridge electrode 16, the first pad 21 and the second pad 22, and exposes the first pad 21 and the second pad 22 for facilitating wire bonding or the like. The insulating layer 24 can be used to prevent the conductive material from leaking to electrically communicate, and to reduce short-circuiting abnormality of the light emitting diode, but the embodiments of the present disclosure are not limited thereto. The insulating layer 24 can be made of a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material can include silica gel. The dielectric material includes electrically insulating materials such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 24 can be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, such as a Bragg reflector (DBR) formed by repeatedly stacking two materials with different refractive indices.

[0030] In some embodiments, the size W1 of the opening 30 ranges from 0.1 to 25 microns. The size W2 of the isolation groove 18 ranges from 0.2 to 30 microns. The size W1 of the opening 30 accounts for 30% to 90% of the size W2 of the isolation groove 18. The above sizes refer to the size in the horizontal direction, and can be referred to the size marked in the figures. In the case of a small size of the light emitting diode, such as a Micro LED or a Mini LED, the distance therebetween should not be too large or too small. If it is too large, the volume of the light emitting diode will be increased, and if it is too small, the electrical properties will be affected. Therefore, controlling the size W1 of the opening 30 and the size W2 of the isolation groove 18 within a certain range can avoid these problems.

[0031] In some embodiments, the light emitting diode is a Micro LED or a Mini LED, and the side size thereof can be less than 250 microns, or less than 200 microns.

[0032] In some embodiments, the ratio of the length L1 of the light emitting structure 12 to the height H1 of the light emitting structure 12 ranges from 0.5 to 50, or from 0.5 to 20. The length L1 of the light emitting structure 12 can be, for example, 2.5 to 200 microns, and the height H1 of the light emitting structure 12 can be, for example, 2 to 5 microns. Alternatively, the ratio of the surface area of the light emitting structure 12 to the side area of the light emitting structure 12 ranges from 0.5 to 50, or from 0.5 to 20. By setting in this way, the micro-leakage problem can be further avoided, and the light brightness can be improved. It should be noted that the surface area of the light emitting structure 12 can refer to the area occupied by the light emitting structure 12 in the top view, and the side area of the light emitting structure 12 can refer to the area occupied by the light emitting structure 12 projected onto a vertical plane.

[0033] The present disclosure also provides a manufacturing method for manufacturing a light emitting diode, which includes the following steps: First, a sapphire substrate 10 is provided.

[0034] Then, a light emitting structure 12 is made on the sapphire substrate 10, which includes a first semiconductor layer 121, a light emitting layer 122, and a second semiconductor layer 123 in sequence from bottom to top. The first semiconductor layer 121 is, for example, an N-GaN semiconductor layer, and the second semiconductor layer 123 is, for example, a p-GaN semiconductor layer.

[0035] Next, etching is performed from the p-GaN semiconductor layer and extending to the N-GaN semiconductor layer, so that part of the N-GaN semiconductor layer is exposed.

[0036] Subsequently, a photolithography and deep etching process is used to define the size of the individual core particles inside the high-voltage LED, and etching is performed from the exposed N-GaN semiconductor layer to the sapphire substrate 10 to form an isolation groove 18.

[0037] Subsequently, a PECVD process is used to deposit SiO2 as a current blocking layer and an insulating structure between the individual LEDs (light emitting structures 12); and the insulating structure between the light emitting structures 12 is etched to form a disconnected structure, i.e., an insulating structure 14.

[0038] Then, a bridge electrode 16 is made between the light emitting structures 12, which covers the insulating structure 14 between the light emitting structures 12 and the bottom exposed sapphire substrate 10.

[0039] Please refer to Figure 4 , Figure 4 is a structure diagram of a light emitting diode provided by the second embodiment of the present application. Compared with Figure 2 the light emitting diode shown in the first embodiment, the difference of the present embodiment mainly lies in that the insulating structure 14 further includes a third part 143, which is arranged in the isolation groove 18 and on the substrate 10. The third part 143 is arranged apart from the first part 141, and the third part 143 is arranged apart from the second part 142. The area between the third part 143 and the first part 141 is part of the opening 30, and the area between the third part 143 and the second part 142 is part of the opening 30. By such arrangement, the micro-current conduction channel can be further avoided, and the performance of the light emitting diode is improved.

[0040] Please refer to Figure 5 , Figure 5 is a structure diagram of a light emitting diode provided by the third embodiment of the present application. Compared with Figure 4 the light emitting diode shown in the second embodiment, the difference of the present embodiment mainly lies in that the number of the third part 143 is multiple, and two third parts 143 are shown in the present embodiment. The two adjacent third parts 143 are also arranged apart, and the area between the two adjacent third parts 143 is part of the opening 30. By such arrangement, the micro-current conduction channel can be further avoided, and the performance of the light emitting diode is improved.

[0041] See also Figure 6 , Figure 6 FIG. 4 is a schematic diagram of the structure of the light emitting diode provided by the fourth embodiment of the present invention. Figure 2 Compared to the light-emitting diode shown in the first embodiment, this embodiment differs primarily in that the substrate 10 in the first embodiment is removed, for example, using laser lift-off technology to facilitate use in Micro LED applications. During the laser lift-off process, the laser path and laser energy are optimized to achieve high-yield and minimal-damage substrate 10 lift-off. Specifically, the light-emitting diode includes at least two light-emitting structures 12, an insulating structure 14, and a bridging electrode 16. An isolation trench 18 is defined between two adjacent light-emitting structures 12, meaning that the two adjacent light-emitting structures 12 do not directly contact each other. The light-emitting structures 12 are electrically connected to each other. Each light-emitting structure 12 includes a first semiconductor layer 121, a light-emitting layer 122, and a second semiconductor layer 123 stacked in sequence, with the light-emitting layer 122 located between the first semiconductor layer 121 and the second semiconductor layer 123. A portion of the insulating structure 14 is located within the isolation trench 18, covering a portion of the light-emitting structure 12. The insulating structure 14 has an opening 30 located within the isolation trench 18.

[0042] The bridge electrode 16 covers the insulating structure 14 and fills the opening 30 . One end of the bridge electrode 16 is electrically connected to the first semiconductor layer 121 of the light emitting structure 12 , and the other end of the bridge electrode 16 is electrically connected to the second semiconductor layer 123 of another light emitting structure 12 .

[0043] An embodiment of the present invention further provides a light emitting device, which may employ the light emitting diode of any of the aforementioned embodiments.

[0044] In summary, the light-emitting diode and light-emitting device provided by the present invention, through the provision of insulating structure 14, interrupt the micro-current conduction path of the insulating structure, thereby resolving the micro-leakage problem caused by insufficient insulation density or impurities in the sidewalls of the high-voltage LED chip. Simultaneously, the insulating structure coverage area at the bridge junction is reduced, reducing its light absorption effect and improving light output brightness. Furthermore, the conflict between increasing the bridging metal to improve chip performance and the poor low-current performance caused by an excessively large insulating structure coverage area is resolved.

[0045] In addition, those skilled in the art should understand that, although there are many problems in the prior art, each embodiment or technical solution of the present invention may be improved in only one or several aspects, without having to simultaneously solve all the technical problems listed in the prior art or background art. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as limiting the claim.

[0046] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit the present application; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions recorded in the above embodiments can be modified, or some or all of the technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting diode, characterized by: The light emitting diode comprises: a substrate; at least two light emitting structures, the light emitting structures being arranged on the substrate, each of the light emitting structures comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer, the first semiconductor layer being arranged on the substrate, the light emitting layer being arranged between the first semiconductor layer and the second semiconductor layer, and the light emitting structures being electrically connected to each other, and an isolation groove being arranged between two adjacent light emitting structures; an insulating structure, at least part of the insulating structure being arranged in the isolation groove, the insulating structure covering part of the light emitting structure, the insulating structure having an opening, the opening being arranged in the isolation groove and corresponding to the first semiconductor layer arranged on the substrate; a bridge electrode, the bridge electrode covering the insulating structure and being electrically connected to the substrate through the opening, one end of the bridge electrode being electrically connected to the first semiconductor layer of one light emitting structure, and the other end of the bridge electrode being electrically connected to the second semiconductor layer of another light emitting structure.

2. The light emitting diode of claim 1, wherein: The insulating structure comprises a first part and a second part, the first part covering part of the light emitting layer and part of the first semiconductor layer of one light emitting structure, and the second part covering part of the second semiconductor layer, part of the light emitting layer, and part of the first semiconductor layer of another light emitting structure, the first part and the second part being arranged apart from each other.

3. The light emitting diode of claim 1, wherein: The size of the opening ranges from 0.1 to 25 microns.

4. The light emitting diode of claim 1, wherein: The size of the isolation groove ranges from 0.2 to 30 microns.

5. The light emitting diode of claim 1, wherein: The size of the opening accounts for 30% to 90% of the size of the isolation groove.

6. The light emitting diode of claim 2, wherein: The insulating structure further comprises a third part, the third part being arranged in the isolation groove and on the substrate, the third part being arranged apart from the first part, and the third part being arranged apart from the second part.

7. The light emitting diode of claim 1, wherein: The opening exposes part of the substrate.

8. The light emitting diode of claim 1, wherein: The light emitting diode further comprises a first pad, a second pad, and an insulating layer, a transparent conductive layer being arranged on the second semiconductor layer, the first pad being electrically connected to the first semiconductor layer, the second pad being electrically connected to the transparent conductive layer, the first pad and the second pad being arranged on different light emitting structures, and the insulating layer covering the light emitting structures, the bridge electrode, the first pad, and the second pad, the insulating layer exposing the first pad and the second pad.

9. The light emitting diode of claim 1, wherein: The material of the insulating structure comprises silicon oxide, aluminum oxide, silicon nitride, and titanium oxide.

10. The light emitting diode of claim 1, wherein: The light emitting structures are connected in series.

11. The light emitting diode of claim 1, wherein: The light emitting diode is a Micro LED or a Mini LED, and the chip size of the light emitting diode is less than 250 microns.

12. The light emitting diode of claim 1, wherein: The ratio of the length of the light emitting structure to the height of the light emitting structure ranges from 0.5 to 50.

13. The light emitting diode of claim 1, wherein: The ratio of the surface area of the light emitting structure to the side area of the light emitting structure ranges from 0.5 to 50.

14. A light emitting device, characterized in that: The light emitting device adopts the light emitting diode according to any one of claims 1 to 13.

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