Ferroelectric capacitor structure
By introducing a β-tungsten nucleation layer into the ferroelectric capacitor, lattice misalignment is reduced, and the formation of the orthorhombic phase interface is promoted, thus solving the problem of low residual polarization in the ferroelectric material layer and improving the performance of the capacitor.
Patent Information
- Application Number
- CN202410566623.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-04-19
- Filing Date
- 2024-05-09
- Publication Date
- 2025-10-28
AI Technical Summary
The residual polarization of the ferroelectric material layer in existing ferroelectric capacitors is low and difficult to improve further.
The introduction of a β-tungsten nucleation layer into the ferroelectric capacitor structure reduces the lattice mismatch and promotes the formation of an orthorhombic phase interface, thereby improving the remnant polarization of the ferroelectric material layer.
It effectively improves the residual polarization of the ferroelectric material layer and enhances the performance of the capacitor.
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Figure CN120857518A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a semiconductor structure, and more particularly to a ferroelectric capacitor structure. Background Art
[0002] A typical ferroelectric capacitor consists of two electrodes and a layer of ferroelectric material between them. Ferroelectric capacitors are very small in size compared to other capacitors. However, improving the residual polarization of the ferroelectric material layer in ferroelectric capacitors remains a continuous research goal. Summary of the Invention
[0003] This invention provides a ferroelectric capacitor structure that can effectively improve the residual polarization of the ferroelectric material layer.
[0004] This invention proposes a ferroelectric capacitor structure, comprising a first electrode, a second electrode, a first ferroelectric material layer, and a first nucleation layer. The second electrode is located on the first electrode. The first ferroelectric material layer is located between the first electrode and the second electrode. The first nucleation layer is in contact with the first ferroelectric material layer. The material of the first nucleation layer is β-tungsten (β-W).
[0005] According to an embodiment of the present invention, in the above-described ferroelectric capacitor structure, the first nucleation layer may be located between the first ferroelectric material layer and the first electrode.
[0006] According to one embodiment of the present invention, the ferroelectric capacitor structure described above may further include a second nucleation layer. The second nucleation layer may be located between the first ferroelectric material layer and the second electrode. The second nucleation layer may contact the first ferroelectric material layer. The material of the second nucleation layer may be β-tungsten.
[0007] According to one embodiment of the present invention, the ferroelectric capacitor structure described above may further include a second ferroelectric material layer and a second nucleation layer. The second ferroelectric material layer is located between the first ferroelectric material layer and the second electrode. The second nucleation layer may be located between the first ferroelectric material layer and the second ferroelectric material layer. The second nucleation layer may contact the first ferroelectric material layer and the second ferroelectric material layer. The material of the second nucleation layer may be β-tungsten.
[0008] According to one embodiment of the present invention, the ferroelectric capacitor structure described above may further include a third nucleation layer. The third nucleation layer may be located between the second ferroelectric material layer and the second electrode. The third nucleation layer may contact the second ferroelectric material layer. The material of the third nucleation layer may be β-tungsten.
[0009] According to an embodiment of the present invention, in the above-described ferroelectric capacitor structure, the first nucleation layer may be located between the first ferroelectric material layer and the second electrode.
[0010] According to one embodiment of the present invention, the ferroelectric capacitor structure described above may further include a second ferroelectric material layer and a second nucleation layer. The second ferroelectric material layer is located between the first ferroelectric material layer and the first electrode. The second nucleation layer may be located between the first ferroelectric material layer and the second ferroelectric material layer. The second nucleation layer may contact the first ferroelectric material layer and the second ferroelectric material layer. The material of the second nucleation layer may be β-tungsten.
[0011] According to one embodiment of the present invention, the ferroelectric capacitor structure described above may further include a second ferroelectric material layer. The second ferroelectric material layer is located between the first ferroelectric material layer and the second electrode. A first nucleation layer may be located between the first ferroelectric material layer and the second ferroelectric material layer. The first nucleation layer may contact the second ferroelectric material layer.
[0012] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, the ferroelectric capacitor structure may be a planar structure or a cylinder structure.
[0013] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, the material of the first electrode may include metal.
[0014] According to an embodiment of the present invention, in the above-described ferroelectric capacitor structure, the material of the first electrode may include β-tungsten (β-W), α-tungsten (α-W), platinum (Pt), titanium (Ti), titanium nitride (TiN), aluminum (Al), tungsten nitride (WN), ruthenium (Ru), ruthenium oxide (RuO), tantalum (Ta), nickel (Ni), cobalt (Co), copper (Cu), silver (Ag), or gold (Au).
[0015] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, the material of the second electrode may include metal.
[0016] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, the material of the second electrode may include β-tungsten, α-tungsten, platinum, titanium, titanium nitride, aluminum, tungsten nitride, ruthenium, ruthenium oxide, tantalum, nickel, cobalt, copper, silver, or gold.
[0017] According to an embodiment of the present invention, in the above-described ferroelectric capacitor structure, the material of the first ferroelectric material layer may include hafnium oxide (HfO2), zirconium oxide (ZrO2), or a combination thereof.
[0018] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, hafnium oxide may be undoped hafnium oxide or doped hafnium oxide.
[0019] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, the dopant of hafnium oxide may include zirconium (Zr), silicon (Si), strontium (Sr), yttrium (Y), lanthanum (La), germanium (Ge), or aluminum (Al).
[0020] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, the thickness of the first nucleation layer can be from 0.1 nanometers (nm) to 10 nanometers.
[0021] According to one embodiment of the present invention, in the above-described ferroelectric capacitor structure, the thickness of the first ferroelectric material layer can be from 0.1 nanometers to 20 nanometers.
[0022] Based on the above, in the ferroelectric capacitor structure proposed in this invention, the first nucleation layer contacts the first ferroelectric material layer, and the material of the first nucleation layer is β-tungsten (β-W). Since the lattice misfit between the first nucleation layer (β-tungsten) and the first ferroelectric material layer is relatively small, it is easy to form an orthorhombic-phase (o-phase) interface, thereby effectively improving the residual polarization of the first ferroelectric material layer.
[0023] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description
[0024] Figure 1A This is a cross-sectional view of the ferroelectric capacitor structure according to some embodiments of the present invention;
[0025] Figure 1B This is a cross-sectional view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0026] Figure 1C This is a cross-sectional view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0027] Figure 1D This is a cross-sectional view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0028] Figure 1E This is a cross-sectional view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0029] Figure 1F This is a cross-sectional view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0030] Figure 1G This is a cross-sectional view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0031] Figure 2A This is a perspective view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0032] Figure 2B This is a perspective view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0033] Figure 2C This is a perspective view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0034] Figure 2D This is a perspective view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0035] Figure 2E This is a perspective view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0036] Figure 2F This is a perspective view of the ferroelectric capacitor structure according to other embodiments of the present invention;
[0037] Figure 2G This is a perspective view of the ferroelectric capacitor structure according to other embodiments of the present invention.
[0038] Explanation of symbols
[0039] 10A~10G, 20A~20G: Ferroelectric Capacitor Structure
[0040] 100, 102: Electrodes
[0041] 104, 108, 112, 116: Ferroelectric material layers
[0042] 106, 110, 114, 118, 120: Nucleation layers Detailed Implementation
[0043] The following description provides detailed examples and accompanying drawings, but these examples are not intended to limit the scope of the invention. For ease of understanding, the same components will be designated with the same symbols in the following description. Furthermore, the drawings are for illustrative purposes only and are not drawn to their original dimensions. In fact, the dimensions of various features may be increased or decreased arbitrarily for clarity of explanation.
[0044] Figure 1A This is a cross-sectional view of a ferroelectric capacitor structure according to some embodiments of the present invention.
[0045] Please refer to Figure 1AThe ferroelectric capacitor structure 10A includes an electrode 100, an electrode 102, a ferroelectric material layer 104, and a nucleation layer 106. In this embodiment, the ferroelectric capacitor structure 10A may be a planar structure, but the present invention is not limited thereto. In some embodiments, the material of the electrode 100 may include a metal. In some embodiments, the material of the electrode 100 may include β-tungsten, α-tungsten, platinum, titanium, titanium nitride, aluminum, tungsten nitride, ruthenium, ruthenium oxide, tantalum, nickel, cobalt, copper, silver, or gold. In some embodiments, the lattice constant of β-tungsten may be... Furthermore, the lattice constant of α-tungsten can be...
[0046] Electrode 102 is located on electrode 100. In some embodiments, the material of electrode 102 may include a metal. In some embodiments, the material of electrode 102 may include β-tungsten, α-tungsten, platinum, titanium, titanium nitride, aluminum, tungsten nitride, ruthenium, ruthenium oxide, tantalum, nickel, cobalt, copper, silver, or gold.
[0047] A ferroelectric material layer 104 is located between electrode 100 and electrode 102. The ferroelectric material layer 104 may be a single-layer or multi-layer structure. In some embodiments, the thickness of the ferroelectric material layer 104 may be from 0.1 nanometers to 20 nanometers. In some embodiments, the material of the ferroelectric material layer 104 may include hafnium oxide, zirconium oxide, or a combination thereof. In some embodiments, the hafnium oxide may be undoped or doped. In some embodiments, the dopant of the doped hafnium oxide may include zirconium, silicon, strontium, yttrium, lanthanum, germanium, or aluminum.
[0048] The nucleation layer 106 contacts the ferroelectric material layer 104. The material of the nucleation layer 106 is β-tungsten. In this embodiment, the nucleation layer 106 may be located between the ferroelectric material layer 104 and the electrode 100, but the present invention is not limited thereto. In some embodiments, the thickness of the nucleation layer 106 may be from 0.1 nanometers to 10 nanometers.
[0049] As can be seen from the above embodiments, in the ferroelectric capacitor structure 10A, the nucleation layer 106 contacts the ferroelectric material layer 104, and the material of the nucleation layer 106 is β-tungsten (β-W). In this way, since the lattice misalignment between the nucleation layer 106 (β-tungsten) and the ferroelectric material layer 104 is relatively small, it is easy to form an orthorhombic phase interface, thereby effectively improving the residual polarization of the ferroelectric material layer 104.
[0050] Figure 1B This is a cross-sectional view of a ferroelectric capacitor structure according to other embodiments of the present invention.
[0051] Please refer to Figure 1A and Figure 1B , Figure 1A Ferroelectric capacitor structure 10A and Figure 1BThe differences in the ferroelectric capacitor structure 10B are as follows. Figure 1B In the ferroelectric capacitor structure 10B, the nucleation layer 106 may be located between the ferroelectric material layer 104 and the electrode 102. Furthermore, in Figure 1A and Figure 1B In this context, identical or similar components are represented by the same symbol, and their descriptions are omitted.
[0052] Figure 1C This is a cross-sectional view of a ferroelectric capacitor structure according to other embodiments of the present invention.
[0053] Please refer to Figure 1A and Figure 1C , Figure 1A Ferroelectric capacitor structure 10A and Figure 1C The differences in the ferroelectric capacitor structure of 10C are as follows. Figure 1C In the ferroelectric capacitor structure 10C, a ferroelectric material layer 108 may also be included. The ferroelectric material layer 108 is located between the ferroelectric material layer 104 and the electrode 102. The ferroelectric material layer 108 may be a single-layer or multi-layer structure. A nucleation layer 106 may be located between the ferroelectric material layer 104 and the ferroelectric material layer 108. The nucleation layer 106 may contact the ferroelectric material layer 108. In this way, because the lattice misalignment between the nucleation layer 106 (β-tungsten) and the ferroelectric material layer 108 is relatively small, an orthorhombic phase interface is easily formed, thereby effectively improving the residual polarization of the ferroelectric material layer 108.
[0054] In some embodiments, the thickness of the ferroelectric material layer 108 may be from 0.1 nanometers to 20 nanometers. In some embodiments, the material of the ferroelectric material layer 108 may include hafnium oxide, zirconium oxide, or a combination thereof. In some embodiments, the hafnium oxide may be undoped or doped. In some embodiments, the dopant of the doped hafnium oxide may include zirconium, silicon, strontium, yttrium, lanthanum, germanium, or aluminum. Furthermore, in Figure 1A and Figure 1C In this context, identical or similar components are represented by the same symbol, and their descriptions are omitted.
[0055] Figure 1D This is a cross-sectional view of a ferroelectric capacitor structure according to other embodiments of the present invention.
[0056] Please refer to Figure 1A and Figure 1D , Figure 1A Ferroelectric capacitor structure 10A and Figure 1D The differences in the 10D ferroelectric capacitor structure are as follows. Figure 1DIn the ferroelectric capacitor structure 10D, a nucleation layer 110 may also be included. The nucleation layer 110 may be located between the ferroelectric material layer 104 and the electrode 102. The nucleation layer 110 may contact the ferroelectric material layer 104. The material of the nucleation layer 110 may be β-tungsten. In this way, due to the small lattice misalignment between the nucleation layer 110 (β-tungsten) and the ferroelectric material layer 104, an orthorhombic phase interface is easily formed, thereby effectively improving the residual polarization of the ferroelectric material layer 104. In some embodiments, the thickness of the nucleation layer 110 may be from 0.1 nanometers to 10 nanometers. Furthermore, in... Figure 1A and Figure 1D In this context, identical or similar components are represented by the same symbol, and their descriptions are omitted.
[0057] Figure 1E This is a cross-sectional view of a ferroelectric capacitor structure according to other embodiments of the present invention.
[0058] Please refer to Figure 1A and Figure 1E , Figure 1A Ferroelectric capacitor structure 10A and Figure 1E The differences in the ferroelectric capacitor structure 10E are as follows. Figure 1E In the ferroelectric capacitor structure 10E, a ferroelectric material layer 112 and a nucleation layer 114 may also be included. The ferroelectric material layer 112 is located between the ferroelectric material layer 104 and the electrode 102. The ferroelectric material layer 112 may be a single-layer structure or a multi-layer structure. The nucleation layer 114 may be located between the ferroelectric material layer 104 and the ferroelectric material layer 112. The nucleation layer 114 may be in contact with the ferroelectric material layer 104 and the ferroelectric material layer 112. The material of the nucleation layer 114 may be β-tungsten. In this way, since the lattice misalignment between the nucleation layer 114 (β-tungsten) and the ferroelectric material layer 104 is relatively small, it is easy to form an orthorhombic phase interface, thereby effectively improving the residual polarization of the ferroelectric material layer 104. Furthermore, since the lattice misalignment between the nucleation layer 114 (β-tungsten) and the ferroelectric material layer 112 is relatively small, it is easy to form an orthorhombic phase interface, which can effectively enhance the residual polarization of the ferroelectric material layer 112.
[0059] In some embodiments, the thickness of the ferroelectric material layer 112 may be from 0.1 nm to 20 nm. In some embodiments, the material of the ferroelectric material layer 112 may include hafnium oxide, zirconium oxide, or a combination thereof. In some embodiments, the hafnium oxide may be undoped or doped. In some embodiments, the dopant of the doped hafnium oxide may include zirconium, silicon, strontium, yttrium, lanthanum, germanium, or aluminum. In some embodiments, the thickness of the nucleation layer 114 may be from 0.1 nm to 10 nm. Furthermore, in Figure 1A and Figure 1E In this context, identical or similar components are represented by the same symbol, and their descriptions are omitted.
[0060] Figure 1F This is a cross-sectional view of a ferroelectric capacitor structure according to other embodiments of the present invention.
[0061] Please refer to Figure 1B and Figure 1F , Figure 1A Ferroelectric capacitor structure 10A and Figure 1F The differences in the 10F ferroelectric capacitor structure are as follows. Figure 1F In the ferroelectric capacitor structure 10F, a ferroelectric material layer 116 and a nucleation layer 118 may also be included. The ferroelectric material layer 116 is located between the ferroelectric material layer 104 and the electrode 100. The ferroelectric material layer 116 may be a single-layer structure or a multi-layer structure. The nucleation layer 118 may be located between the ferroelectric material layer 104 and the ferroelectric material layer 116. The nucleation layer 118 may be in contact with the ferroelectric material layer 104 and the ferroelectric material layer 116. The material of the nucleation layer 118 may be β-tungsten. In this way, since the lattice misalignment between the nucleation layer 118 (β-tungsten) and the ferroelectric material layer 104 is relatively small, it is easy to form an orthorhombic phase interface, thereby effectively improving the residual polarization of the ferroelectric material layer 104. Furthermore, since the lattice misalignment between the nucleation layer 118 (β-tungsten) and the ferroelectric material layer 116 is relatively small, it is easy to form an orthorhombic phase interface, which can effectively enhance the residual polarization of the ferroelectric material layer 116.
[0062] In some embodiments, the thickness of the ferroelectric material layer 116 may be from 0.1 nm to 20 nm. In some embodiments, the material of the ferroelectric material layer 116 may include hafnium oxide, zirconium oxide, or a combination thereof. In some embodiments, the hafnium oxide may be undoped or doped. In some embodiments, the dopant of the doped hafnium oxide may include zirconium, silicon, strontium, yttrium, lanthanum, germanium, or aluminum. In some embodiments, the thickness of the nucleation layer 118 may be from 0.1 nm to 10 nm. Furthermore, in Figure 1B and Figure 1F In this context, identical or similar components are represented by the same symbol, and their descriptions are omitted.
[0063] Figure 1G This is a cross-sectional view of a ferroelectric capacitor structure according to other embodiments of the present invention.
[0064] Please refer to Figure 1E and Figure 1G , Figure 1E The ferroelectric capacitor structure 10E and Figure 1G The differences in the ferroelectric capacitor structure of 10G are as follows. Figure 1GIn the ferroelectric capacitor structure 10G, a nucleation layer 120 may also be included. The nucleation layer 120 may be located between the ferroelectric material layer 112 and the electrode 102. The nucleation layer 120 may contact the ferroelectric material layer 112. The material of the nucleation layer 120 may be β-tungsten. In this way, due to the small lattice misalignment between the nucleation layer 120 (β-tungsten) and the ferroelectric material layer 112, an orthorhombic phase interface is easily formed, thereby effectively improving the residual polarization of the ferroelectric material layer 112. In some embodiments, the thickness of the nucleation layer 120 may be from 0.1 nanometers to 10 nanometers. Furthermore, in... Figure 1E and Figure 1G In this context, identical or similar components are represented by the same symbol, and their descriptions are omitted.
[0065] Figure 2A This is a perspective view of a ferroelectric capacitor structure according to some other embodiments of the present invention. Figure 2B This is a perspective view of a ferroelectric capacitor structure according to some other embodiments of the present invention. Figure 2C This is a perspective view of a ferroelectric capacitor structure according to some other embodiments of the present invention. Figure 2D This is a perspective view of a ferroelectric capacitor structure according to some other embodiments of the present invention. Figure 2E This is a perspective view of a ferroelectric capacitor structure according to some other embodiments of the present invention. Figure 2F This is a perspective view of a ferroelectric capacitor structure according to some other embodiments of the present invention. Figure 2G This is a perspective view of a ferroelectric capacitor structure according to some other embodiments of the present invention.
[0066] Please refer to Figures 1A to 1G as well as Figures 2A to 2G , Figure 2A Ferroelectric capacitor structure 20A to Figure 2G The arrangement of components in the ferroelectric capacitor structure 20G can respectively correspond to Figure 1A Ferroelectric capacitor structure 10A to Figure 1G The arrangement of components in the ferroelectric capacitor structure 10G. Figure 1A Ferroelectric capacitor structure 10A to Figure 1G 10G ferroelectric capacitor structure and Figure 2A Ferroelectric capacitor structure 20A to Figure 2G The differences in the ferroelectric capacitor structure 20G are as follows. Ferroelectric capacitor structures 10A to 10G can be planar structures, and ferroelectric capacitor structures 20A to 20G can be columnar structures. Furthermore, in Figures 1A to 1G as well as Figures 2A to 2G In this context, identical or similar components are represented by the same symbol, and their descriptions are omitted.
[0067] In summary, in the ferroelectric capacitor structure of the above embodiments, the nucleation layer contacts the ferroelectric material layer, and the material of the nucleation layer is β-tungsten. As a result, since the lattice misalignment between the nucleation layer (β-tungsten) and the ferroelectric material layer is relatively small, it is easy to form an orthorhombic phase interface, thereby effectively improving the residual polarization of the ferroelectric material layer.
[0068] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the appended claims.
Claims
1. A ferroelectric capacitor structure, comprising: First electrode; The second electrode is located on the first electrode; A first ferroelectric material layer is located between the first electrode and the second electrode; as well as The first nucleation layer contacts the first ferroelectric material layer, wherein the material of the first nucleation layer is β-tungsten.
2. The ferroelectric capacitor structure as claimed in claim 1, wherein the first nucleation layer is located between the first ferroelectric material layer and the first electrode.
3. The ferroelectric capacitor structure as described in claim 2, further comprising: The second nucleation layer is located between the first ferroelectric material layer and the second electrode, and is in contact with the first ferroelectric material layer, wherein the material of the second nucleation layer is β-tungsten.
4. The ferroelectric capacitor structure as described in claim 2, further comprising: The second ferroelectric material layer is located between the first ferroelectric material layer and the second electrode; as well as The second nucleation layer is located between the first ferroelectric material layer and the second ferroelectric material layer, and is in contact with the first ferroelectric material layer and the second ferroelectric material layer, wherein the material of the second nucleation layer is β-tungsten.
5. The ferroelectric capacitor structure as described in claim 4, further comprising: The third nucleation layer is located between the second ferroelectric material layer and the second electrode, and is in contact with the second ferroelectric material layer, wherein the material of the third nucleation layer is β-tungsten.
6. The ferroelectric capacitor structure as claimed in claim 1, wherein the first nucleation layer is located between the first ferroelectric material layer and the second electrode.
7. The ferroelectric capacitor structure as described in claim 6, further comprising: The second ferroelectric material layer is located between the first ferroelectric material layer and the first electrode; as well as The second nucleation layer is located between the first ferroelectric material layer and the second ferroelectric material layer, and is in contact with the first ferroelectric material layer and the second ferroelectric material layer, wherein the material of the second nucleation layer is β-tungsten.
8. The ferroelectric capacitor structure as described in claim 1, further comprising: A second ferroelectric material layer is located between the first ferroelectric material layer and the second electrode, wherein the first nucleation layer is located between the first ferroelectric material layer and the second ferroelectric material layer and is in contact with the second ferroelectric material layer.
9. The ferroelectric capacitor structure as claimed in claim 1, wherein the ferroelectric capacitor structure comprises a plate structure or a columnar structure.
10. The ferroelectric capacitor structure of claim 1, wherein the material of the first electrode comprises a metal.
11. The ferroelectric capacitor structure of claim 1, wherein the material of the first electrode includes β-tungsten, α-tungsten, platinum, titanium, titanium nitride, aluminum, tungsten nitride, ruthenium, ruthenium oxide, tantalum, nickel, cobalt, copper, silver or gold.
12. The ferroelectric capacitor structure of claim 1, wherein the material of the second electrode includes metal.
13. The ferroelectric capacitor structure of claim 1, wherein the material of the second electrode includes β-tungsten, α-tungsten, platinum, titanium, titanium nitride, aluminum, tungsten nitride, ruthenium, ruthenium oxide, tantalum, nickel, cobalt, copper, silver or gold.
14. The ferroelectric capacitor structure of claim 1, wherein the material of the first ferroelectric material layer comprises hafnium oxide, zirconium oxide, or a combination thereof.
15. The ferroelectric capacitor structure of claim 14, wherein the hafnium oxide comprises undoped hafnium oxide or doped hafnium oxide.
16. The ferroelectric capacitor structure of claim 15, wherein the dopant of hafnium oxide includes zirconium, silicon, strontium, yttrium, lanthanum, germanium, or aluminum.
17. The ferroelectric capacitor structure of claim 1, wherein the thickness of the first nucleation layer is 0.1 nanometers to 10 nanometers.
18. The ferroelectric capacitor structure of claim 1, wherein the thickness of the first ferroelectric material layer is from 0.1 nanometers to 20 nanometers.